TPS22930
SLVSBL3D – NOVEMBER 2012 – REVISED JULY 2021
TPS22930 Ultra Small, Low On-Resistance Load Switch with Controlled Turn-On
1 Features
3 Description
•
•
The TPS22930 is a small, low RON load switch
with controlled turn on. The device contains a Pchannel MOSFET that can operate over an input
voltage range of 1.4 V to 5.5 V. The switch is
controlled by an on/off input (ON), which is capable
of interfacing directly with low-voltage control signals.
The TPS22930 is active high enable.
•
•
•
•
•
•
•
•
Integrated single channel load switch
Ultra small four terminal wafer-chip-scale package
(nominal dimensions shown see addendum for
details)
– 0.9 mm × 0.9 mm, 0.5 mm pitch, 0.5-mm height
(YZV)
Input voltage range: 1.4 V to 5.5 V
Ultra low RON resistance
– RON = 35 mΩ at VIN = 5 V
– RON = 36 mΩ at VIN = 3.6 V
– RON = 49 mΩ at VIN = 1.8 V
2-A maximum continuous switch current
Low quiescent current (< 3 µA)
Low control input threshold enables use of
1.2-V/1.8-V/2.5-V/3.3-V logic
Controlled slew rate
Under voltage lockout
Reverse current protection when disabled
2 Applications
•
•
•
•
•
•
•
Smartphone / wireless handsets
Portable industrial / medical equipment
Portable media players
Point of sales terminals
GPS navigation devices
Digital cameras
Portable instrumentation
The TPS22930 device provides circuit breaker
functionality by disabling the body diode during
reverse voltage (also known as reverse current)
situations. Reverse current protection is active only
when the power-switch is disabled (off). The device
disengages the body diode when the output voltage
(VOUT) is driven higher than the input (VIN) to stop the
flow of current towards the input side of the switch.
Additionally, under-voltage lockout (UVLO) protection
turns the switch off if the input voltage is too low.
The slew rate of the device is internally controlled in
order to avoid inrush current.
The TPS22930 is available in an ultra-small, spacesaving 4-pin CSP package and is characterized for
operation over the free-air temperature range of –
40°C to 85°C.
Device Information(1)
PART NUMBER
TPS22930
(1)
Power
Supply
ON
BODY SIZE (MAX)
0.92 mm × 0.92 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
VIN
CIN
PACKAGE
DSBGA (4)
VOUT
ON
CL
RL
OFF
TPS22930
GND
GND
Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Specifications.................................................................. 3
5.1 Absolute Maximum Ratings........................................ 3
5.2 ESD Ratings............................................................... 3
5.3 Recommended Operating Conditions.........................3
5.4 Thermal Information....................................................4
5.5 Electrical Characteristics.............................................5
5.6 Switching Characteristics............................................6
5.7 Typical Characteristics................................................ 7
6 Pin Configuration and Functions.................................12
7 Parameter Measurement Information.......................... 13
8 Detailed Description......................................................14
8.1 Overview................................................................... 14
8.2 Functional Block Diagram......................................... 14
8.3 Feature Description...................................................14
8.4 Device Functional Modes..........................................15
9 Application and Implementation.................................. 16
9.1 Application Information............................................. 16
9.2 Typical Application.................................................... 16
10 Power Supply Recommendations..............................17
11 Layout........................................................................... 17
11.1 Layout Guidelines................................................... 17
11.2 Layout Example...................................................... 18
11.3 Thermal Considerations.......................................... 18
12 Device and Documentation Support..........................19
12.1 Receiving Notification of Documentation Updates..19
12.2 Support Resources................................................. 19
12.3 Trademarks............................................................. 19
12.4 Electrostatic Discharge Caution..............................19
12.5 Glossary..................................................................19
13 Mechanical, Packaging, and Orderable
Information.................................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (January 2021) to Revision D (July 2021)
Page
• Updated IRCP(leak) spec to 2.6 µA........................................................................................................................5
Changes from Revision B (February 2016) to Revision C (January 2021)
Page
• Updated the numbering format for tables, figures and cross-references throughout the document ..................1
Changes from Revision A (June 2015) to Revision B (February 2016)
Page
• Made changes to Pin Configurations and Functions ......................................................................................... 1
Changes from Revision * (November 2012) to Revision A (June 2015)
Page
• Removed Ordering Information table..................................................................................................................1
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section. ................. 1
2
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5 Specifications
5.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1) (2)
MIN
MAX
UNIT
VIN
Input voltage
–0.3
6
V
VOUT
Output voltage
–0.3
6
V
VON
Input voltage
–0.3
6
V
IMAX
Maximum continuous switch current
IPLS
Maximum pulsed switch current, pulse ≤1ms, 25% duty cycle
TA
Operating free-air temperature
TJ
Maximum junction temperature
Tstg
Storage temperature
(1)
(2)
(3)
(3)
–40
–65
2
A
2.5
A
85
°C
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature
may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature
[TJ(max)], the maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the
part/package in the application (RθJA), as given by the following equation: TA(max) = TJ(max) – (RθJA × PD(max))
5.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101(2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
5.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VIN
Input voltage range
VON
ON voltage range
VOUT
Output voltage range
VIH
High-level input voltage, ON
VIL
Low-level input voltage, ON
CIN
Input capacitor
(1)
MIN
MAX
UNIT
1.4
5.5
V
0
5.5
V
V
0
VIN
VIN = 3.61 V to 5.5 V
1.1
5.5
VIN = 1.4 V to 3.6 V
1.1
5.5
VIN = 3.61 V to 5.5 V
0
0.6
VIN = 1.4 V to 3.6 V
0
0.4
1(1)
V
V
µF
Refer to Application Information section.
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5.4 Thermal Information
TPS22930
THERMAL
METRIC(1)
YZV (DSBGA)
UNIT
4 PINS
RθJA
Junction-to-ambient thermal resistance
189.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
1.9
°C/W
RθJB
Junction-to-board thermal resistance
36.8
°C/W
ψJT
Junction-to-top characterization parameter
11.3
°C/W
ψJB
Junction-to-board characterization parameter
36.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
–
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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5.5 Electrical Characteristics
Unless otherwise note, the specification in the following table applies over the operating ambient temperature –40°C ≤ TA ≤
85°C (Full). Typical values are for TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
IOUT = 0 V, VIN = VON = 5.25 V
2.3
10
IOUT = 0 V, VIN = VON = 4.2 V
2.2
7
UNIT
POWER SUPPLIES AND CURRENTS
IIN
Quiescent current
IOUT = 0 V, VIN = VON = 3.6 V
2.1
7
IOUT = 0 V, VIN = VON = 2.5 V
1.0
5
IOUT = 0 V, VIN = VON = 1.5 V
0.8
5
VOUT = Open, VIN = 5.25 V, VON = 0 V
0.3
10
0.2
7
0.2
7
VOUT = Open, VIN = 2.5 V, VON = 0 V
0.1
5
VOUT = Open, VIN = 1.5 V, VON = 0 V
0.1
5
VOUT = 0 V, VIN = 5.25 V, VON = 0 V
0.8
10
VOUT = 0 V, VIN = 4.2 V, VON = 0 V
0.2
7
Full
VOUT = Open, VIN = 4.2 V, VON = 0 V
IIN(off)
IIN(leak)
ION
Off supply current
Leakage current
VOUT = Open, VIN = 3.6 V, VON = 0 V
Full
VOUT = 0 V, VIN = 3.6 V, VON = 0 V
0.2
7
VOUT = 0 V, VIN = 2.5 V, VON = 0 V
Full
0.1
5
VOUT = 0 V, VIN = 1.5 V, VON = 0 V
0.1
5
ON pin input leakage
current
VON = 5.5 V
Full
0.5
IRCP(leak)
Reverse leakage current
VIN = VON = GND, VOUT = 5 V,
measured from VIN
Full
2.6
UVLO
Undervoltage lockout
µA
µA
µA
µA
VIN increasing, VON = 3.6 V, IOUT = –100 mA
VIN decreasing, VON = 3.6 V, IOUT = –100 mA
Full
1.2
0.5
RESISTANCE CHARACTERISTICS
VIN = 5.0 V
VIN = 4.2 V
VIN = 3.6 V
RON
ON-state resistance
IOUT = –200 mA
VIN = 2.5 V
VIN = 1.8 V
VIN = 1.5 V
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25°C
35
Full
25°C
50
35
Full
25°C
Full
44
mΩ
50
49
Full
25°C
44
50
39
Full
25°C
44
50
36
Full
25°C
44
55
62
59
66
74
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5.6 Switching Characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 5.5 V, TA = 25°C (unless otherwise noted)
tON
Turn-on time
tOFF
Turn-off time
tR
VOUT rise time
tF
VOUT fall time
4.8
RL = 10 Ω, CL = 0.1 µF
6.3
5.6
µs
2.8
VIN = 4.2 V, TA = 25°C (unless otherwise noted)
tON
Turn-on time
tOFF
Turn-off time
tR
VOUT rise time
tF
VOUT fall time
5.8
RL = 10 Ω, CL = 0.1 µF
7.3
5.4
µs
2.8
VIN = 3.0 V, TA = 25°C (unless otherwise noted)
6
tON
Turn-on time
tOFF
Turn-off time
tR
VOUT rise time
tF
VOUT fall time
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RL = 10 Ω, CL = 0.1 µF
9.5
6.3
µs
2.9
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5.7 Typical Characteristics
6
70
−40C
25C
85C
Vin = 1.4V
Vin = 1.5V
Vin = 1.8V
Vin = 2.5V
Vin = 3.3V
Vin = 3.6V
Vin = 4.2V
Vin = 5.0V
Vin = 5.25V
Vin = 5.5V
5
60
VOUT (V)
Ron (mOhm)
4
50
3
Temperature = 25C
40
2
30
1
IOUT = −200mA
20
1
2
3
4
5
0
0.2
6
0.4
0.6
0.8
1
1.2
VON (V)
Vin (V)
G001
G008
Figure 5-1. RON vs VIN
Figure 5-2. On Input Threshold
6
3
−40C
25C
85C
5
−40C
25C
85C
2.5
VON=GND, VOUT = 0V
2
ILEAK (µA)
IIN (µA)
4
3
1.5
2
1
1
0.5
VOUT = Open, VIN = VON
0
1
2
3
4
5
0
6
1
2
3
VIN (V)
4
5
6
VIN (V)
G003
G004
Figure 5-3. IIN vs VIN
Figure 5-4. IIN(leak) vs VIN
0.6
70
−40C
25C
85C
0.5
60
VON=GND, VOUT = Open
IOFF (µA)
Ron (mOhm)
0.4
50
0.3
40
0.2
30
IOUT = −200mA
20
−40
−15
Vin = 1.4V
Vin = 1.5V
Vin = 1.8V
Vin = 2.5V
Vin = 3.3V
10
35
Temperature (°C)
Vin = 3.6V
Vin = 4.2V
Vin = 5V
Vin = 5.25V
Vin = 5.5V
60
0.1
85
0
1
2
3
4
Figure 5-5. Temperature vs RON
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5
6
VIN (V)
G002
G005
Figure 5-6. IIN(off) vs VIN
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5.7 Typical Characteristics (continued)
0.5
10
−40C
25C
85C
0
8
VIN=VON=GND
IRCP_OUT (µA)
IRCP (µA)
−0.5
−1
6
4
−1.5
VIN=VON=GND
2
−2
−2.5
−40C
25C
85C
1
2
3
4
5
0
6
1
2
VOUT (V)
3
4
5
Figure 5-7. IRCP(leak) vs VOUT (Measured On VIN)
G007
Figure 5-8. IRCP(leak) vs VOUT (Measured on VOUT)
4
7
3.6
6
3.2
tfall (µs)
trise (µs)
8
5
2.8
4
2.4
VIN = 5.5V, CIN = 10uF, CL = 0.1uF, RL = 10Ohm
3
−40
−15
10
35
Temperature (°C)
60
VIN = 5.5V, CIN = 10uF, CL = 0.1uF, RL = 10Ohm
2
−40
85
−15
10
35
Temperature (°C)
60
G022
85
G013
Figure 5-9. tR vs Temperature (VIN = 5.5 V)
Figure 5-10. tF vs Temperature (VIN = 5.5 V)
9
17
8
16
7
tfall (µs)
trise (µs)
18
15
6
14
5
VIN = 1.4V, CIN = 10uF, CL = 0.1uF, RL = 10Ohm
13
−40
−15
10
35
Temperature (°C)
60
VIN = 1.4V, CIN = 10uF, CL = 0.1uF, RL = 10Ohm
85
4
−40
−15
10
35
Temperature (°C)
60
G025
Figure 5-11. tR vs Temperature (VIN = 1.4 V)
8
6
VOUT (V)
G006
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85
G010
Figure 5-12. tF vs Temperature (VIN = 1.4 V)
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5.7 Typical Characteristics (continued)
6
8
5
7
toff (µs)
9
ton (µs)
7
4
6
3
5
VIN = 5.5V, CIN = 10uF, CL = 0.1uF, RL = 10Ohm
2
−40
−15
10
35
Temperature (°C)
60
VIN = 5.5V, CIN = 10uF, CL = 0.1uF, RL = 10Ohm
4
−40
85
−15
10
35
Temperature (°C)
60
G021
85
G017
Figure 5-13. tON vs Temperature (VIN = 5.5 V)
Figure 5-14. tOFF vs Temperature (VIN = 5.5 V)
26
20
24
19
toff (µs)
21
ton (µs)
28
22
18
20
17
VIN = 1.4V, CIN = 10uF, CL = 0.1uF, RL = 10Ohm
18
−40
−15
10
35
Temperature (°C)
60
VIN = 1.4V, CIN = 10uF, CL = 0.1uF, RL = 10Ohm
16
−40
85
−15
10
35
Temperature (°C)
60
G018
85
G014
Figure 5-15. tON vs Temperature (VIN = 1.4 V)
Figure 5-16. tOFF vs Temperature (VIN = 1.4 V)
20
−40C
25C
85C
16
trise (µs)
12
8
4
CIN = 10uF, CL = 0.1uF, RL = 10Ohm, VON=1.8V
0
1
2
3
4
5
6
Vin (V)
G026
Figure 5-17. tR vs VIN
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5.7.1 Typical AC Scope Captures at TA = 25°C
Figure 5-18. Turn-On Response Time (VIN = 5.5 V, CIN = 10 µF, CL Figure 5-19. Turn-On Response Time (VIN = 1.4 V, CIN = 10 µF, CL
= 1 µF, RL = 10 Ω)
= 1 µF, RL = 10 Ω)
Figure 5-20. Turn-On Response Time (VIN = 5.5 V, CIN = 10 µF, CL Figure 5-21. Turn-On Response Time (VIN = 1.4 V, CIN = 10 µF, CL
= 0.1 µF, RL = 10 Ω)
= 0.1 µF, RL = 10 Ω)
Figure 5-22. Turn-Off Response Time (VIN = 5.5 V, CIN = 10 µF, CL Figure 5-23. Turn-Off Response Time (VIN = 1.4 V, CIN = 10 µF, CL
= 1 µF, RL = 10 Ω)
= 1 µF, RL = 10 Ω)
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5.7.1 Typical AC Scope Captures at TA = 25°C (continued)
Figure 5-24. Turn-Off Response Time (VIN = 5.5 V, CIN = 10 µF, CL Figure 5-25. Turn-Off Response Time (VIN = 1.4 V, CIN = 10 µF, CL
= 0.1 µF, RL = 10 Ω)
= 0.1 µF, RL = 10 Ω)
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6 Pin Configuration and Functions
2
2
1
A
A
B
B
1
BUMP VIEW
LAZER MARKING
VIEW
Figure 6-1. YZV Package 4-Pin DSBGA Bottom View
Table 6-1. Pin Assignments
A
VOUT
VIN
B
GND
ON
1
2
Table 6-2. Pin Functions
PIN
NO.
NAME
A1
VOUT
I/O
DESCRIPTION
O
Switch output.
A2
VIN
I
Switch input. Input bypass capacitor recommended for minimizing VIN dip during transients.
B1
GND
–
Device ground.
B2
ON
I
Switch control input, active high. Do no leave floating.
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7 Parameter Measurement Information
VIN
VOUT
CIN = 10µF
+
-
CL
ON
(A)
RL
ON
GND
TPS22930
OFF
GND
GND
TEST CIRCUIT
50%
50%
VON
tOFF
tON
50%
50%
tF
tR
90%
VOUT
VOUT
10%
90%
10%
t ON/t OFF WAVEFORMS
(A) Rise and fall times of the control signal are 100ns.
Figure 7-1. Test Circuit and tON/tOFF Waveforms
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8 Detailed Description
8.1 Overview
The TPS22930 is a single channel, 2-A load switch in a 4-terminal BSGA package. A low enable threshold
makes it capable of interfacing directly with low voltage control signals. In the off state, the device has very low
leakage current during off state. This prevents downstream circuits from pulling high standby current from thee
supply. When turning on, the output will rise with a controlled slew rate to limit inrush current.
The device will also disengage the body diode when disabled to provide reverse current protection. The
undervoltage lockout (UVLO) threshold will ensure the switch is turned off and will block reverse current if
the VIN power supply is removed
8.2 Functional Block Diagram
VIN
Reverse
Current
Protection
UVLO
Control
Logic
ON
GND
VOUT
8.3 Feature Description
Table 8-1. Feature List
(1)
DEVICE
RON (TYP) AT
4.2 V
RISE TIME AT
4.2 V (TYP)
QUICK OUTPUT
DISCHARGE(1)
MAXIMUM
CONTINUOUS
CURRENT
ENABLE
TPS22930A
35 mΩ
5.4 µs
No
2A
Active High
This feature discharges output of the switch to GND through a resistor, preventing the output from floating when the pass FET is
disabled.
8.3.1 On And Off Control
The ON pins control the state of the switch. Asserting ON high enables the switch. ON is active high and has a
low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard
GPIO logic threshold. It can be used with any microcontroller with 1.2V or higher GPIO voltage.
8.3.2 UVLO
UVLO turns off the switch if the input voltage drops below the under voltage lockout threshold. With the ON pin
active, the input voltage rising above the under voltage lockout threshold will allow a controlled turn-on of the
switch to limit current over-shoot.
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The maximum UVLO of the TPS22930A is 1.2 V. This is under the minimum VIN voltage and meets the system
UVLO requirements. Once the device is disabled through UVLO, it will block reverse current in the case a
voltage is applied to VOUT
8.3.3 Reverse Current Protection
Reverse current protection (RCP) is only active when ON is asserted low. When ON is asserted high, current
can flow from VOUT to VIN or from VIN to VOUT. This allows the device to function as a bi-directional switch
when enabled.
8.4 Device Functional Modes
Table 8-2 describes the state of the switch and the reverse current protection as determined by the ON pin.
Table 8-2. Switch and Reverse Current Protection State
ON
VIN to VOut
RCP
H
On
Off
L
Off
On
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
9.1.1 Input Capacitor (Optional)
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, it is recommended that a capacitor be placed between VIN and GND.
A 1-µF ceramic capacitor, CIN, placed close to the pins, is usually sufficient. Higher values of CIN can be used to
further reduce the voltage drop during high-current application. When switching heavy loads, it is recommended
to have an input capacitor about 100 times higher than the output capacitor to avoid excessive voltage drop;
however, a 100 to 1 ratio is not required for proper functionality of the device.
9.1.2 Output Capacitor (Optional)
Due to the integrated body diode in the PMOS switch, a CIN greater than CL is highly recommended. A CL
greater than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current
flow through the body diode from VOUT to VIN. A CIN to CL ratio of 100 to 1 is recommended for minimizing VIN
dip caused by inrush currents during startup; however, a 100 to 1 ratio is not required for proper functionality of
the device.
9.2 Typical Application
Power
Supply
VIN
ON
CIN
VOUT
ON
CL
RL
OFF
TPS22930
GND
GND
Figure 9-1. Typical Application Schematic
9.2.1 Design Requirements
For this design example, the following will be used as the system requirements.
Table 9-1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN Range
1.5 V to 5.5 V
UVLO Threshold
< 1.5 V
Reverse Current Protection
Requred
Load Current
1A
Ambient Temperature
25 °C
9.2.2 Detailed Design Procedure
To begin the design process, the designer needs to know the following:
• Input Voltage range
• UVLO Threshold
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Load Current
Ambient Temperature
9.2.3 Application Curve
UVLO Response shows the UVLO response when the device is enabled.
ON = 5 V
Figure 9-2. UVLO Response
10 Power Supply Recommendations
The device is designed to operate from a VIN range of 1.5 V to 5.5 V. The power supply should be well regulated
and placed as close to the device terminals as possible. It must be able to withstand all transient and load
current steps. in most situations, using an input capacitance of 1 µF is sufficient to prevent the supply voltage
from dipping when the switch is turned on. In cases where the power supply is slow to respond to a large
transient current or large load current step, additional bulk capacitance may be required on the input
11 Layout
11.1 Layout Guidelines
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects
along with minimizing the case to ambient thermal impedance. The ON pin cannot be left floating and must be
driven either high or low for proper functionality.
Figure 11-1 shows an example of a layout.
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11.2 Layout Example
CL cap
CIN cap
Figure 11-1. Layout Recommendation
11.3 Thermal Considerations
The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use
the following equation as a guideline:
PD(max) =
TJ(max) - TA
θJA
(1)
where
•
•
•
•
PD(max) = maximum allowable power dissipation
TJ(max) = maximum allowable junction temperature (125°C for the TPS22930)
TA = ambient temperature of the device
ΘJA = junction to air thermal impedance. See Thermal Information table. This parameter is highly dependent
upon board layout.
The power dissipated by the device depends on the RON of the device at a given VIN. To calculate the amount of
power being dissipated by the device, use the following equation:
PIR = I2 ´ RON
(2)
where
•
•
•
PIR = power dissipated by the device
I = load current in amperes
RON = resistance of the device in Ohms at a given VIN (see Electrical Characteristics table)
The result from Equation 2 should always be less than or equal to the result from Equation 1.
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12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OUTLINE
YZV0004-C01
DSBGA - 0.54 mm max height
SCALE 15.000
DIE SIZE BALL GRID ARRAY
B
A
E
BALL A1
CORNER
D
0.54 MAX
C
SEATING PLANE
0.20
0.15
0.05 C
0.5
TYP
B
SYMM
0.5
TYP
D: Max = 0.918 mm, Min = 0.858 mm
E: Max = 0.918 mm, Min = 0.858 mm
A
4X
0.015
0.25
0.20
C A B
1
SYMM
2
4226510/A 01/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
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EXAMPLE BOARD LAYOUT
YZV0004-C01
DSBGA - 0.54 mm max height
DIE SIZE BALL GRID ARRAY
(0.5) TYP
4X ( 0.2)
2
1
A
SYMM
(0.5) TYP
B
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 50X
0.0375 MAX
0.0375 MIN
METAL UNDER
SOLDER MASK
EXPOSED
METAL
( 0.2)
SOLDER MASK
OPENING
( 0.2)
METAL
SOLDER MASK
OPENING
EXPOSED
METAL
SOLDER MASK
DEFINED
(PREFERRED)
NON-SOLDER MASK
DEFINED
SOLDER MASK DETAILS
NOT TO SCALE
4226510/A 01/2021
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
See Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).
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EXAMPLE STENCIL DESIGN
YZV0004-C01
DSBGA - 0.54 mm max height
DIE SIZE BALL GRID ARRAY
(0.5) TYP
(R0.05) TYP
4X ( 0.21)
1
2
A
SYMM
(0.5) TYP
B
METAL
TYP
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.075 mm THICK STENCIL
SCALE: 50X
4226510/A 01/2021
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
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PACKAGE OPTION ADDENDUM
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1-Apr-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS22930AYZVR
ACTIVE
DSBGA
YZV
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
3Q
TPS22930AYZVT
ACTIVE
DSBGA
YZV
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
3Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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