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TPS22934
SLVSAD4B – AUGUST 2010 – REVISED APRIL 2015
Ultra-Small, Low-Input-Voltage, Low rON Load Switch
With Hysteresis Control Input
1 Features
3 Description
•
•
•
The TPS22934 is a small, low ON-resistance (rON)
load switch with controlled turnon. The devices
contain a P-channel MOSFETs that can operate over
an input voltage range of 1.5 V to 3.6 V.
1
•
•
•
•
•
•
Integrated Single Channel Load Switch
Input Voltage: 1.5 V to 3.6 V
ON-Resistance
– rDS(ON) = 63 mΩ at VIN = 3.6 V
– rDS(ON) = 69 mΩ at VIN = 2.5 V
– rDS(ON) = 78 mΩ at VIN = 1.8 V
– rDS(ON) = 87 mΩ at VIN = 1.5 V
1-A Maximum Continuous Switch Current
Integrated Hysteresis Enable Input (ON Pin)
Allows Easy Power-Rail Sequencing
Controlled Slew Rate Option: 26 µs at 3.6 V
Quick Output Discharge Transistor
Ultra-Small CSP-4 Package
ESD Performance Tested Per JESD 22
– 3000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
The switch is controlled by an ON/OFF input (ON),
which has built-in hysteresis (VTH+(typ) = 2.35 V)
allowing an easy use of TPS22934 in power-rail
sequencing applications.
In the TPS22934 a 35-Ω on-chip load resistor is
added for output quick discharge when switch is
turned off.
In the TPS22934, the rise time of the device is
internally controlled to avoid inrush current. The
TPS22934 features a typical rise time of 26 µs with a
3.6-V input.
The the TPS22934 is available in an ultra-small
space-saving
4-pin
CSP
package
and
is
characterized for operation over the free-air
temperature range of –40ºC to 85ºC.
Device Information(1)
2 Applications
•
•
•
•
•
•
•
•
•
PART NUMBER
Battery-Powered Equipment
Portable Industrial Equipment
Portable Medical Equipment
Portable Media Players
Point-of-Sales Terminals
GPS Devices
Digital Cameras
Portable Instrumentation
Smart Phones
TPS22934
PACKAGE
DSBGA (4)
BODY SIZE (NOM)
0.90 mm × 0.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application
1.8-V Power-Rail Sequencing
VOUT
VIN
VREG=1.8V
LOAD 1
CIN1
Li-ion
Battery
ON
CL1
RL1
GND
TPS22934
GND
GND
VREG=2.8V
LOAD 2
CIN2
CL2
RL2
GND
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22934
SLVSAD4B – AUGUST 2010 – REVISED APRIL 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
4
4
4
4
5
6
6
6
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics: VIN = 3.6 V ......................
Switching Characteristics: VIN = 2.5 V ......................
Switching Characteristics: VIN = 1.8 V ......................
Switching Characteristics: VIN = 1.5 V ......................
Typical Characteristics ............................................
Parameter Measurement Information ................ 12
Detailed Description ............................................ 13
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
13
13
13
14
Applications and Implementation ...................... 15
9.1 Application Information............................................ 15
9.2 Typical Application .................................................. 16
10 Power Supply Recommendations ..................... 17
11 Layout................................................................... 17
11.1 Layout Guidelines ................................................. 17
11.2 Layout Example .................................................... 17
11.3 Thermal Considerations ........................................ 18
12 Device and Documentation Support ................. 19
12.1 Trademarks ........................................................... 19
12.2 Electrostatic Discharge Caution ............................ 19
12.3 Glossary ................................................................ 19
13 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (June 2013) to Revision B
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Moved Operating free-air temperature row from Absolute Maximum Ratings to Recommended Operating Conditions ..... 4
•
Deleted Dissipation Ratings table and replaced it with Thermal Information table ............................................................... 4
Changes from Original (August 2010) to Revision A
•
2
Page
Updated package reference from YZP to YZV throughout document.................................................................................... 1
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SLVSAD4B – AUGUST 2010 – REVISED APRIL 2015
5 Pin Configuration and Functions
YZV Package
4-Pin DSBGA
Lazer Marking View and Bump View
Pin Functions
PIN
I/O
DESCRIPTION
NO.
NAME
A1
VOUT
O
Switch output
A2
VIN
I
Switch input, bypass this input with a ceramic capacitor to ground
B1
GND
—
B2
ON
I
Ground
Switch control input, active high. Do not leave floating
Table 1. Terminals Assignments (YZV Package)
B
ON
GND
A
VIN
VOUT
2
1
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SLVSAD4B – AUGUST 2010 – REVISED APRIL 2015
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
VIN
Input voltage
VOUT
Output voltage
VON
Control input voltage
IMAX
Maximum continuous switch current, TA = –40°C to 85°C
IPLS
Maximum pulsed switch current, 100-µs pulse, 2% duty cycle, TA = –40°C to 85°C
Tstg
Storage temperature
(1)
MIN
MAX
UNIT
–0.3
4
V
VIN + 0.3
V
4
V
1
A
–0.3
–65
1.4
A
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±3000
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
VIN
Input voltage
VON
Control input voltage
VOUT
Output voltage
CIN
Input capacitance
1 (1)
TA
Operating free-air temperature
–40
(1)
NOM
1.5
MAX
UNIT
3.6
0
V
3.6
VIN
V
µF
85
°C
See the Input Capacitor section in Application Information.
6.4 Thermal Information
TPS22934
THERMAL METRIC (1)
YZV (DSBGA)
UNIT
4 PINS
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
1.9
RθJB
Junction-to-board thermal resistance
36.8
ψJT
Junction-to-top characterization parameter
11.3
ψJB
Junction-to-board characterization parameter
36.8
(1)
4
189.1
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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6.5 Electrical Characteristics
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40°C ≤ TA ≤
85°C (full). Typical values are for TA = 25°C. VIN = 1.5 V to 3.6 V.
PARAMETER
TEST CONDITIONS
TA
MIN TYP (1)
MAX UNIT
IIN
Quiescent current
IOUT = 0, VIN = VON = 3.6 V
Full
3.5
20
µA
IIN(OFF)
OFF-state supply
current
VON = GND, VOUT = 0
Full
2.5
5
µA
25°C
63
77
VIN = 3.6 V
VIN = 2.5 V
rON
ON-state resistance
IOUT = -200 mA
VIN = 1.8 V
VIN = 1.5 V
Full
80
25°C
69
Full
85
89
25°C
78
Full
96
100
25°C
87
Full
107
115
rPD
Output pulldown
resistance
VIN = 3.3 V, VON < VTH-, IOUT = 30 mA
ION
ON input bias current
VON = 1.5 V to 3.6 V or GND
Full
VIN increasing
Full
0.8
Full
0.7
0.95
1.3
VON = 3.6 V,
IOUT = -100 mA
mΩ
25°C
35
65
Ω
0.7
1.5
µA
1.05
1.4
UVLO
Undervoltage lockout
VTH+
Positive going ON
voltage threshold
VIN = 1.5 V to 3.6 V
Full
2.1
2.35
2.7
V
VTH-
Negative going ON
voltage threshold
VIN = 1.5 V to 3.6 V
Full
1.3
1.45
1.6
V
ΔVTH
Hysteresis
(VTH+ – VTH-)
VIN = 1.5 V to 3.6 V
Full
0.7
0.9
1.1
V
(1)
VIN decreasing
V
Typical values are at VIN = 3.3 V and TA = 25°C.
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6.6 Switching Characteristics: VIN = 3.6 V
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tON
Turnon time
RL = 500 Ω, CL = 0.1 µF
33
µs
tOFF
Turnoff time
RL = 500 Ω, CL = 0.1 µF
17
µs
tr
VOUT rise time
RL = 500 Ω, CL = 0.1 µF
26
µs
tf
VOUT fall time
RL = 500 Ω, CL = 0.1 µF
7.5
µs
6.7 Switching Characteristics: VIN = 2.5 V
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tON
Turnon time
RL = 500 Ω, CL = 0.1 µF
42
µs
tOFF
Turnoff time
RL = 500 Ω, CL = 0.1 µF
17
µs
tr
VOUT rise time
RL = 500 Ω, CL = 0.1 µF
31
µs
tf
VOUT fall time
RL = 500 Ω, CL = 0.1 µF
8
µs
6.8 Switching Characteristics: VIN = 1.8 V
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tON
Turnon time
RL = 500 Ω, CL = 0.1 µF
54
µs
tOFF
Turnoff time
RL = 500 Ω, CL = 0.1 µF
15
µs
tr
VOUT rise time
RL = 500 Ω, CL = 0.1 µF
37
µs
tf
VOUT fall time
RL = 500 Ω, CL = 0.1 µF
10
µs
6.9 Switching Characteristics: VIN = 1.5 V
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tON
Turnon time
RL = 500 Ω, CL = 0.1 µF
64
µs
tOFF
Turnoff time
RL = 500 Ω, CL = 0.1 µF
14
µs
tr
VOUT rise time
RL = 500 Ω, CL = 0.1 µF
42
µs
tf
VOUT fall time
RL = 500 Ω, CL = 0.1 µF
12
µs
6
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6.10 Typical Characteristics
0.080
0.100
ON Resistance (Ohm)
0.080
0.060
0.040
25C
0.020
85C
-40C
1.8
2.5
3.3
0.060
0.050
0.040
0.030
0.020
0.010
0.000
1.5
0.070
3.6
0.000
-40.00
VIN (V)
25.00
IOUT = –200 mA
VIN = 3.6 V
IOUT = –200 mA
Figure 2. ON-Resistance vs Temperature
Figure 1. ON-Resistance vs Input Voltage
4.0E-06
3.5E-06
3.5E-06
3.0E-06
OFF Current (A)
2.5E-06
2.0E-06
1.5E-06
1.0E-06
25C
85C
2.0E-06
1.5E-06
1.0E-06
25C
5.0E-07
85C
0.0E+00
-40C
4
3.5
3
2.5
2
1.5
1
0.5
0
4
3.5
3
Input Voltage (V)
VON = 0 V
Input Voltage (V)
VON = VIN = 3.6 V
2.5
-40C
-5.0E-07
2
-5.0E-07
1
0.0E+00
2.5E-06
0.5
5.0E-07
3.0E-06
0
Quiescent Current (A)
85.00
Temperature (°C)
1.5
ON Resistance (Ohm)
0.120
IOUT = 0
Figure 3. IIN (Quiescent Current ) vs Input Voltage
Figure 4. OFF Current (IINOFF) vs Input Voltage
65
40
35
tON (µs)
tON (µs)
60
55
30
50
45
-40°C
25°C
85°C
Tem perature
CL = 0.1 µF
25
-40°C
25°C
RL = 500 Ω
85°C
Tem perature
CL = 0.1 µF
Figure 5. tON vs Temperature (VIN = 1.8 V)
RL = 500 Ω
Figure 6. tON vs Temperature (VIN = 3.6 V)
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Typical Characteristics (continued)
30
25
25
tOFF (µs)
tOFF (µs)
20
15
20
15
10
-40°C
25°C
Tem perature
CL = 0.1 µF
10
-40°C
85°C
25°C
85°C
Tem perature
RL = 500 Ω
CL = 0.1 µF
Figure 7. tOFF vs Temperature (VIN = 1.8 V)
RL = 500 Ω
Figure 8. tOFF vs Temperature (VIN = 3.6 V)
30
45
tRISE (µs)
tRISE (µs)
29
40
35
28
27
26
30
-40°C
25°C
85°C
Tem perature
CL = 0.1 µF
25
-40°C
25°C
CL = 0.1 µF
12
8.0
7.8
tFALL (µs)
11
tFALL (µs)
RL = 500 Ω
Figure 10. tRISE vs Temperature (VIN = 3.6 V)
Figure 9. tRISE vs Temperature (VIN = 1.8 V)
10
9
7.6
7.4
7.2
8
-40°C
25°C
85°C
7.0
-40°C
25°C
Tem perature
CL = 0.1 µF
85°C
Tem perature
RL = 500 Ω
CL = 0.1 µF
Figure 11. tFALL vs Temperature (VIN = 1.8 V)
8
85°C
Tem perature
RL = 500 Ω
RL = 500 Ω
Figure 12. TFALL vs Temperature (VIN = 3.6 V)
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Typical Characteristics (continued)
6.0
0.012
0.012
6.0
CL = 0.1 µF
CL = 0.1 µF
RL = 500 Ohm
VIN = 3.6 V
TA = 25°C
5.0
0.010
4.0
RL = 500 Ohm
VIN = 3.6 V
TA = 25°C
5.0
0.010
IOUT
0.008
4.0
3.0
0.006
3.0
0.006
2.0
0.004
2.0
0.004
0.002
1.0
0.002
0.000
0.0
0.008
1.0
IOUT (A)
IOUT (A)
ON (V)
ON (V)
ON
IOUT
0.0
0.000
ON
-1.0
-0.002
0
10
20
30
40
50
60
70
80
-0.002
-1.0
90
-5
0
5
10
15
Time (µs)
Figure 13. tON Response
30
35
40
0.012
6.0
45
0.012
CL = 10 µF
CL = 10 µF
RL = 500 Ohm
VIN = 3.6 V
TA = 25°C
RL = 500 Ohm
VIN = 3.6 V
TA = 25°C
3.0
2.0
1.0
5.0
0.008
4.0
0.006
3.0
ON (V)
ON
0.010
IOUT (A)
4.0
ON (V)
25
Figure 14. tOFF Response
6.0
5.0
20
Time (µ)
0.010
0.008
0.006
IOUT
0.004
2.0
0.004
0.002
1.0
0.002
0.000
0.0
IOUT (A)
-10
IOUT
0.0
0.000
ON
-1.0
-20
0
20
40
60
80
100
120
140
160
-0.002
180
-1.0
-200
0
200
400
600
Time (µs)
Figure 15. tON Response
1000
1200
1400
1600
-0.002
1800
Figure 16. tOFF Response
0.006
6.0
0.006
6.0
5.0
800
Time (µs)
CL = 0.1 µF
CL = 0.1 µF
RL = 500 Ohm
VIN = 1.8 V
TA = 25°C
RL = 500 Ohm
VIN = 1.8 V
TA = 25°C
0.005
5.0
IOUT
0.005
0.004
4.0
0.004
3.0
0.003
3.0
0.003
2.0
0.002
2.0
0.002
0.001
1.0
4.0
1.0
0.001
IOUT
ON
0.000
0.0
-1.0
-20
0
20
40
IOUT(A)
ON (V)
IOUT (A)
ON (V)
ON
60
80
Time (µs)
100
120
140
160
-0.001
180
0.0
0.000
-1.0
-0.001
-5
0
Figure 17. tON Response
5
10
15
20
Time (µs)
25
30
35
40
45
Figure 18. tOFF Response
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Typical Characteristics (continued)
6.0
0.006
6.0
0.006
CL = 10 µF
CL = 10 µF
RL = 500 Ohm
VIN = 1.8 V
TA = 25°C
5.0
0.005
5.0
0.004
4.0
3.0
0.003
3.0
2.0
0.002
1.0
0.001
4.0
RL = 500 Ohm
VIN = 1.8 V
TA = 25°C
0.005
0.004
0.0
0.000
40
0.001
0.000
60
80
100
120
140
160
-0.001
180
-1.0
-200
0
200
400
600
Time (µs)
Figure 19. tON Response
800
Time (µs)
1000
1200
1400
0.120
6.0
CL = 0.1 µF
RL = 36 Ohm
VIN = 3.6 V
TA = 25°C
CL = 0.1 µF
IOUT
RL = 36 Ohm
VIN = 3.6 V
TA = 25°C
0.080
4.0
3.0
0.060
3.0
2.0
0.040
2.0
0.040
0.020
1.0
0.020
0.000
0.0
0.000
-0.020
-1.0
ON
1.0
ON (V)
5.0
IOUT (A)
0.100
4.0
ON (V)
-0.001
1800
Figure 20. tOFF Response
0.120
6.0
5.0
1600
0.100
0.080
ON
0.060
IOUT(A)
20
0.002
1.0
ON
-1.0
0
2.0
0.0
IOUT
-20
0.003
IOUT
IOUT(A)
IOUT (A)
ON (V)
ON (V)
ON
IOUT
0.0
-1.0
-10
0
10
20
30
40
50
60
70
-0.020
-10
80
-5
0
5
10
Time (µs)
Figure 21. tON Response
20
25
30
35
40
Figure 22. tOFF Response
0.120
6.0
0.120
6.0
CL = 10 µF
CL = 10 µF
IOUT
RL = 36 Ohm
VIN = 3.6 V
TA = 25°C
RL = 36 Ohm
VIN = 3.6 V
TA = 25°C
0.080
4.0
3.0
0.060
3.0
2.0
0.040
2.0
0.040
0.020
1.0
0.020
0.000
0.0
0.000
4.0
ON
1.0
ON (V)
5.0
IOUT (A)
0.100
5.0
ON (V)
15
Time (µs)
0.100
0.080
0.060
ON
IOUT(A)
-20
IOUT
0.0
-1.0
-40
-20
0
20
40
60
80
100
120
140
-0.020
160
-1.0
-200
-100
Time (µs)
100
200
300
400
500
600
700
-0.020
800
Time (µs)
Figure 23. tON Response
10
0
Figure 24. tOFF Response
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Typical Characteristics (continued)
0.120
0.120
6.0
CL = 0.1 µF
5.0
4.0
ON
0.100
5.0
0.080
4.0
RL = 18 Ohm
VIN = 1.8 V
TA = 25°C
0.100
0.080
ON
0.060
2.0
0.040
2.0
0.040
1.0
0.020
1.0
0.020
0.000
0.0
0.000
IOUT (A)
3.0
3.0
ON (V)
ON (V)
CL = 0.1 µF
IOUT
RL = 18 Ohm
VIN = 1.8 V
TA = 25°C
0.060
IOUT (A)
6.0
IOUT
0.0
-1.0
-40
-20
0
20
40
60
80
100
120
140
-0.020
160
-0.020
-1.0
-10
-5
0
5
10
Time (µs)
15
20
25
30
35
40
Time (µs)
Figure 25. tON Response
Figure 26. tOFF Response
0.120
6.0
6.0
0.120
CL = 10 µF
CL = 10 µF
IOUT
RL = 18 Ohm
VIN = 1.8 V
TA = 25°C
RL = 18 Ohm
VIN = 1.8 V
TA = 25°C
0.100
5.0
0.080
4.0
3.0
0.060
3.0
2.0
0.040
2.0
0.040
0.020
1.0
0.020
0.000
0.0
0.000
5.0
4.0
0.100
0.080
1.0
0.060
ON
IOUT(A)
IOUT (A)
ON (V)
ON (V)
ON
IOUT
0.0
-1.0
-20
0
20
40
60
80
100
120
140
160
-0.020
180
-1.0
-50
0
Time (µs)
Figure 27. tON Response
50
100
150
200
Time (µs)
250
300
350
400
-0.020
450
Figure 28. tOFF Response
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7 Parameter Measurement Information
V IN
V OUT
C IN= 1µF
ON
(A)
+
-
ON
CL
RL
OFF
GND
TPS22934
GND
GND
Timing test circuit
V ON
VTH+
VTH-
tOFF
tON
50%
V OUT
tf
tr
90%
V OUT
50%
10%
90%
10%
Timing waveforms
A.
Rise and fall times of the control signal is 100 ns.
Figure 29. Test Circuit and tON/tOFF Waveforms
12
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8 Detailed Description
8.1 Overview
The TPS22934 is a single-channel, 1-A load switch in a small, space-saving DSBGA-4 package. These devices
implement a P-channel MOSFET to provide a low ON-resistance for a low voltage drop across the device. A
controlled rise time is used in applications to limit the inrush current. The switch is controlled by an ON/OFF input
(ON), which has built-in hysteresis (VTH+(typ) = 2.35 V) allowing an easy use of TPS22934 in power-rail
sequencing applications.
8.2 Functional Block Diagram
VIN
UVLO
+
ON
_
Control
Logic
VOUT
Ref
Output Discharge
GND
8.3 Feature Description
Table 2. Feature List
rON (TYP)
AT 3.6 V
SLEW RATE
(TYP)
AT 3.6 V
QUICK
OUTPUT
DISCHARGE
MAXIMUM
OUTPUT
CURRENT
ENABLE
63 mΩ
26 µs
Yes
1A
Hysteresis Input
VTH+(typ) = 2.35 V
TPS22934
8.3.1 ON and OFF Control
The ON pin controls the state of the switch. The TPS22934 has built-in hysteresis on its control inputs. The load
switch is active when the ON voltage is greater than the positive going voltage threshold (VTH+). If the ON voltage
is lower than the negative going voltage threshold (VTH-), then the pass FET is deactivated and the active
pulldown from VOUT to GND is activated.
This scenario is ideal for power-rail sequencing applications as shown in Figure 30 where the 2.8-V supply must
be valid before the 1.8-V supply turnon.
8.3.2 Undervoltage Lockout
The undervoltage lockout turns off the switch if the input voltage drops below the undervoltage lockout threshold.
With the ON pin active, the input voltage rising above the undervoltage lockout threshold causes a controlled
turnon of the switch, which limits current overshoots.
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8.3.3 Quick Output Discharge
The TPS22934 includes the Quick Output Discharge (QOD) feature. When the switch is disabled, a discharge
resistance with a typical value of 35 Ω is connected between the output and ground. This resistance pulls down
the output and prevents it from floating when the device is disabled.
8.4 Device Functional Modes
Table 3. Function Table
14
ON (Control Signal)
VIN to VOUT
VON < VTH-
OFF
ON
VON > VTH+
ON
OFF
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VOUT to GND
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9 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPS22934 device is a single channel, 1-A load switch supporting VIN in the range of 1.5 to 3.6 V. The ON
pin controls the state of the switch. ON pin voltage can be between 0 and 3.6 V. The device has built-in
hysteresis on its control input. The load switch is active when ON voltage is greater than the positive going
voltage threshold (VTH+). If the ON voltage is lower than the negative going voltage threshold (VTH-), then the
pass FET is deactivated and the active pulldown from VOUT to GND is activated.
9.1.1 VIN to VOUT Voltage Drop
The VIN to VOUT voltage drop in the device is determined by the RON of the device and the load current. The
RON of the device depends upon the VIN condition of the device. Refer to the RON specification of the device in
the Electrical Characteristics table of this data sheet. Once the RON of the device is determined based upon the
VIN conditions, use Equation 1 to calculate the VIN to VOUT voltage drop:
ΔV = ILOAD × RON
where
•
•
•
•
ΔV = Voltage drop from VIN to VOUT
ILOAD = Load current
RON = On-resistance of the device for a specific VIN
An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
(1)
9.1.2 Input Capacitor
To limit the voltage drop on the input supply caused by transient inrush currents, when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-μF ceramic
capacitor, CIN, placed close to the pins is usually sufficient. Higher values of CIN can be used to further reduce
the voltage drop.
9.1.3 Output Capacitor
TI recommends a CIN to CL ratio of 10 to 1 for minimizing VIN dip caused by inrush currents during start-up.
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9.2 Typical Application
Figure 30 demonstrates how the TPS22934 can be used for power-rail sequencing.
V OUT
V IN
VREG1=1.8V
1.8V Supply
C IN1
Li-ion
Battery
ON
Processor/
Subsystem
GND
TPS22934
GND
2.8V Supply
VREG2=2.8V
C IN2
GND
GND
Figure 30. 1.8-V and 2.8-V Power-Rail Sequencing
9.2.1 Design Requirements
Table 4. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VREG1
1.8 V
VREG2
2.8 V
9.2.2 Detailed Design Procedure
9.2.2.1 Input Capacitor
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor must be placed between VIN and GND. A 1-µF ceramic
capacitor, CIN, placed close to the pins is usually sufficient. Higher values of CIN can be used to further reduce
the voltage drop. A CIN to CL ratio of 10 to 1 is recommended.
9.2.2.2 Output Capacitor
Due to the integral body diode in the PMOS switch, TI highly recommends a CIN greater than CL. A CL greater
than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow
through the body diode from VOUT to VIN.
16
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9.2.3 Application Curve
Figure 31. Power-Rail Sequencing of 2.8-V and 1.8-V Rail
10 Power Supply Recommendations
The device is designed to operate with a VIN range of 1.5 V to 3.6 V.
11 Layout
11.1 Layout Guidelines
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects
along with minimizing the case to ambient thermal impedance.
11.2 Layout Example
Figure 32 shows an example for these devices. Notice the connection to system ground between the VOUT
Bypass Capacitor ground and the GND pin of the load switch, this creates a ground barrier which helps to reduce
the ground noise seen by the device.
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Layout Example (continued)
To GPIO
control
Gnd
Via
ON
VIN Bypass
Capacitor
VIN
GND
B2
B1
A2
A1
Gnd
Via
VOUT Bypass
Capacitor
VOUT
VIA to Power Ground Plane
Figure 32. Recommended Layout Example
11.3 Thermal Considerations
The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use the
following equation as a guideline:
PD(MAX) =
TJ(MAX) - TA
RθJA
where
•
•
•
•
18
PD(max) = maximum allowable power dissipation
TJ(max) = maximum allowable junction temperature
TA = ambient temperature of the device
θJA = junction to air thermal impedance. See the Thermal Information section. This parameter is highly
dependent upon board layout.
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(2)
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12 Device and Documentation Support
12.1 Trademarks
All trademarks are the property of their respective owners.
12.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS22934YZVR
ACTIVE
DSBGA
YZV
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
62
N
TPS22934YZVT
ACTIVE
DSBGA
YZV
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
62
N
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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