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TPS22963C, TPS22964C
SLVSBS6A – JUNE 2013 – REVISED JANUARY 2015
TPS2296xC 5.5-V, 3-A, 13-mΩ On-Resistance Load Switch With Reverse Current
Protection and Controlled Turn-On
1 Features
3 Description
•
•
•
•
The TPS22963/64 is a small, ultra-low RON load
switch with controlled turn on. The device contains a
low RDSON N-Channel MOSFET that can operate over
an input voltage range of 1 V to 5.5 V and switch
currents of up to 3 A. An integrated charge pump
biases the NMOS switch in order to achieve a low
switch ON-Resistance. The switch is controlled by an
on/off input (ON), which is capable of interfacing
directly with low-voltage GPIO control signals. The
rise time of the TPS22963/64 device is internally
controlled in order to avoid inrush current.
1
•
•
•
•
•
•
•
•
Integrated N-Channel Load Switch
Input Voltage Range: 1 V to 5.5 V
Internal Pass-FET RDSON = 8 mΩ (Typ)
Ultra-Low ON-Resistance
– RON = 13 mΩ (Typ) at VIN = 5 V
– RON = 14 mΩ (Typ) at VIN = 3.3 V
– RON = 18 mΩ (Typ) at VIN = 1.8 V
3A Maximum Continuous Switch Current
Reverse Current Protection (When Disabled)
Low Shutdown Current (760 nA)
Low Threshold 1.3-V GPIO Control Input
Controlled Slew-Rate to Avoid Inrush Current
Quick Output Discharge (TPS22964 only)
Six Terminal Wafer-Chip-Scale Package (Nominal
Dimensions Shown - See Addendum for Details)
– 0.9 mm x 1.4 mm, 0.5 mm Pitch, 0.5 mm
Height (YZP)
ESD Performance Tested Per JESD 22
– 2-kV Human-Body Model (A114-B, Class II)
– 500-V Charged-Device Model (C101)
The TPS22963/64 provides reverse current
protection. When the power switch is disabled, the
device will not allow the flow of current towards the
input side of the switch. The reverse current
protection feature is active only when the device is
disabled so as to allow for intentional reverse current
(when the switch is enabled) for some applications.
The TPS22963/64 is available in a small, spacesaving 6-pin WCSP package and is characterized for
operation over the free air temperature range of
–40°C to 85°C.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
DSBGA (6)
1.40 mm x 0.90 mm
2 Applications
TPS2296xC
•
•
•
•
•
•
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Smartphones
Notebook Computer and Ultrabook™
Tablet PC Computer
Solid State Drives (SSD)
DTV/IP Set Top Box
POS Terminals and Media Gateways
4 Simplified Schematic
LOAD
Li-ion
Battery
VIN
ON
CIN
OFF
ON
VOUT
TPS22963/
TPS22964
COUT
ROUT
GND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22963C, TPS22964C
SLVSBS6A – JUNE 2013 – REVISED JANUARY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
9
1
1
1
1
2
3
3
4
Absolute Maximum Ratings ...................................... 4
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics........................................... 5
Switching Characteristics .......................................... 6
Typical Electrical Characteristics .............................. 7
Typical Switching Characteristics ............................. 9
Typical AC Scope Captures at TA = 25ºC ............. 10
Parametric Measurement Information ............... 13
10 Detailed Description ........................................... 14
10.1
10.2
10.3
10.4
Overview ...............................................................
Functional Block Diagram .....................................
Feature Description...............................................
Device Functional Modes......................................
14
14
15
15
11 Application and Implementation........................ 15
11.1 Application Information.......................................... 15
11.2 Typical Application ................................................ 17
12 Power Supply Recommendations ..................... 19
13 Layout................................................................... 19
13.1 Layout Guidelines ................................................. 19
13.2 Layout Example .................................................... 19
14 Device and Documentation Support ................. 20
14.1
14.2
14.3
14.4
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
20
20
20
20
15 Mechanical, Packaging, and Orderable
Information ........................................................... 20
5 Revision History
Changes from Original (June 2013) to Revision A
•
2
Page
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
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Product Folder Links: TPS22963C TPS22964C
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SLVSBS6A – JUNE 2013 – REVISED JANUARY 2015
6 Device Comparison Table
(1)
(2)
RON (Typ) at 3.3 V
Rise Time (Typ)
at 3.3 V (1)
Quick Output Discharge
(QOD) (2)
Maximum Output Current
Enable
TPS22963C
14 mΩ
TPS22964C
14 mΩ
715 µs
No
3A
Active High
715 µs
Yes
3A
Active High
Additional rise time options are possible. Contact factory for more information.
This feature discharges the output of the switch to ground through a 273 Ω resistor, preventing the output from floating (only in
TPS22964C).
7 Pin Configuration and Functions
6-PINS
YZP PACKAGE
C
C
B
B
A
A
2
1
1
2
BUMP VIEW
LAZER MARKING
VIEW
Pin Assignments (YZP Package)
C
GND
ON
B
VOUT
VIN
A
VOUT
VIN
1
2
Pin Functions
PIN
I/O
DESCRIPTION
TPS22963/64
NAME
C1
GND
-
Ground
C2
ON
I
Switch control input, active high. Do not leave floating
A1, B1
VOUT
O
Switch output
A2, B2
VIN
I
Switch input. Use a bypass capacitor to ground (ceramic)
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Product Folder Links: TPS22963C TPS22964C
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TPS22963C, TPS22964C
SLVSBS6A – JUNE 2013 – REVISED JANUARY 2015
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8 Specifications
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VIN
Input voltage range
–0.3
6
V
VOUT
Output voltage range
–0.3
6
V
VON
ON pin voltage range
–0.3
6
V
IMAX
Maximum continuous switch current
3
A
IPLS
Maximum pulsed switch current, 100 µs pulse, 2% duty cycle, TA = –40°C to 85°C
TA
Operating free air temperature range
TJ
Maximum junction temperature
Tstg
Storage temperature range
–40
–65
4
A
85
°C
125
°C
150
°C
8.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
8.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VIN
Input voltage range
VOUT
Output voltage range
VIH,
ON
High-level ON voltage
VIL, ON
Low-level ON voltage
CIN
Input capacitor
(1)
TYP
MAX
UNIT
1
5.5
V
V
0
5.5
VIN = 2.5 V to 5.5 V
1.3
5.5
VIN = 1 V to 2.49 V
1.1
5.5
VIN = 2.5 V to 5.5 V
0
0.6
VIN = 1 V to 2.49 V
0
0.4
1 (1)
V
V
µF
Refer to the application section
8.4 Thermal Information
TPS2296xC
THERMAL METRIC
(1)
YZP
UNIT
6 PINS
RθJA
Junction-to-ambient thermal resistance
RθJCtop
Junction-to-case (top) thermal resistance
1.4
RθJB
Junction-to-board thermal resistance
22.8
ψJT
Junction-to-top characterization parameter
5.7
ψJB
Junction-to-board characterization parameter
22.6
(1)
4
132.0
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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Product Folder Links: TPS22963C TPS22964C
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SLVSBS6A – JUNE 2013 – REVISED JANUARY 2015
8.5 Electrical Characteristics
VIN = 1 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
IQ, VIN
TEST CONDITIONS
Quiescent current
ISD, VIN
Shut down current
TYP
MAX
IOUT = 0, VON = VIN = 5 V
Full
66.5
96
IOUT = 0, VON = VIN = 4.5 V
Full
57
82
IOUT = 0, VON = VIN = 3.3 V
Full
38
60
IOUT = 0, VON = VIN = 2.5 V
Full
33.3
55
IOUT = 0, VON = VIN = 1.8 V
Full
28.3
45
IOUT = 0, VON = VIN = 1.2 V
Full
22.8
36
IOUT = 0, VON = VIN = 1.1 V
Full
21.6
34
IOUT = 0, VON = VIN = 1 V
Full
20.3
33
VON = 0, VIN = 5 V, VOUT = 0 V
Full
0.76
2
VON = 0, VIN = 1 V, VOUT = 0 V
Full
0.07
0.8
25˚C
13.3
21
VIN = 5 V, IOUT = –200 mA
VIN = 4.5 V, IOUT = –200 mA
VIN = 3.3 V, IOUT = –200 mA
VIN = 2.5 V, IOUT = –200 mA
RON
On-resistance
VIN = 1.8 V, IOUT = –200 mA
VIN = 1.2 V, IOUT = –200 mA
VIN = 1.1 V, IOUT = –200 mA
VIN = 1 V, IOUT = –200 mA
VHYS,
ON
ION
IRC,
ON pin leakage current
VIN
RPD (1)
(1)
ON pin hysteresis
TA
MIN
Full
25˚C
26
13.3
Full
25˚C
26
13.8
Full
25˚C
15.4
18.2
25.6
28.7
33.8
Full
115
VIN = 4.5 V
Full
105
VIN = 3.3 V
Full
80
VIN = 2.5 V
Full
65
VIN = 1.8 V
Full
50
VIN = 1.2 V
Full
35
VIN = 1.1 V
Full
30
VIN = 1 V
Full
30
VIN = VON = 0 V, VOUT = 5 V
Output pulldown resistance
VON = 0 V, IOUT = 2 mA
48
60
Full
Reverse current when disabled
41
50
VIN = 5 V
VON = 1.1 V to 5.5 V
37
44
Full
25°C
28
33
Full
25˚C
24
29
Full
25˚C
22
27
Full
25˚C
21
Full
–0.02
85°C
–2.1
Full
273
µA
µA
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mV
150
25°C
UNIT
nA
µA
325
Ω
Available in TPS22964 only.
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8.6 Switching Characteristics
PARAMETER
TPS22963/64
TEST CONDITION
TYP
UNIT
VIN = 5.0 V, TA = 25°C (unless otherwise noted)
tON
Turn-ON time
ROUT = 10Ω, CIN = 1µF, COUT = 0.1µF
928
tOFF
Turn-OFF time
ROUT = 10Ω, CIN = 1µF, COUT = 0.1µF
2.5
tR
VOUT rise time
ROUT = 10Ω, CIN = 1µF, COUT = 0.1µF
890
tF
VOUT fall time
ROUT = 10Ω, CIN = 1µF, COUT = 0.1µF
2.1
tD
Delay time
ROUT = 10Ω, CIN = 1µF, COUT = 0.1µF
561
µs
VIN = 4.5 V, TA = 25°C (unless otherwise noted)
tON
Turn-ON time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
tOFF
Turn-OFF time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2.6
tR
VOUT rise time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
859
tF
VOUT fall time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2.1
tD
Delay time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
560
905
µs
VIN = 3.3 V, TA = 25°C (unless otherwise noted)
tON
Turn-ON time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
836
tOFF
Turn-OFF time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2.8
tR
VOUT rise time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
715
tF
VOUT fall time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2
tD
Delay time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
553
µs
VIN = 1.8 V, TA = 25°C (unless otherwise noted)
tON
Turn-ON time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
tOFF
Turn-OFF time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2.8
tR
VOUT rise time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
651
tF
VOUT fall time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2
tD
Delay time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
558
822
µs
VIN = 1.2 V, TA = 25°C (unless otherwise noted)
tON
Turn-ON time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
tOFF
Turn-OFF time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
3.2
tR
VOUT rise time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
535
tF
VOUT fall time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
1.8
tD
Delay time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
594
852
µs
VIN = 1.1 V, TA = 25°C (unless otherwise noted)
tON
Turn-ON time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
tOFF
Turn-OFF time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
3.5
tR
VOUT rise time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
518
tF
VOUT fall time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
1.9
tD
Delay time
ROUT = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
604
6
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861
µs
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SLVSBS6A – JUNE 2013 – REVISED JANUARY 2015
8.7 Typical Electrical Characteristics
40
50
-40°C
25°C
35
85°C
40
VIN = 1V
VIN = 1.1V
VIN = 1.2V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
VIN = 4.5V
VIN = 5V
VIN = 5.5V
30
RON (m
)
RON (m
)
25
20
30
20
15
10
10
5
IOUT = -200mA
IOUT = -200mA
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-40
6
-15
VIN (V)
10
35
60
C003
C004
Figure 1. On Resistance vs VIN
100
Figure 2. On Resistance vs Temperature
100
-40°C
90
25°C
85°C
80
85
Temperature (C)
VIN = 1V
VIN = 1.1V
VIN = 1.2V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
VIN = 4.5V
VIN = 5V
VIN = 5.5V
80
60
IQ, VIN (µA)
IQ, VIN (µA)
70
50
40
60
40
30
20
20
10
VOUT = Open, VON = VIN
VOUT = Open, VON = VIN
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-40
-15
VIN (V)
10
35
60
85
Temperature (C)
C001
C002
Figure 3. Quiescent Current vs VIN
Figure 4. Quiescent Current vs Temperature
1.200
1.200
-40°C
VON = 0V, VOUT = 0V
25°C
1.000
1.000
VIN = 1V
VIN = 1.1V
VIN = 1.2V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
VIN = 4.5V
VIN = 5V
VIN = 5.5V
85°C
VON = 0V, VOUT = 0V
0.800
ISD, VIN (µA)
ISD, VIN (µA)
0.800
0.600
0.600
0.400
0.400
0.200
0.200
0.000
0.000
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
-40
-15
10
35
60
85
Temperature (C)
VIN (V)
C005
Figure 5. Shut Down Current vs VIN
C026
Figure 6. Shut Down Current vs Temperature
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Typical Electrical Characteristics (continued)
150
300
-40°C
295
25°C
135
25°C
120
85°C
290
105
VHYS, ON (mV)
RPD (
)
285
280
275
90
75
60
45
270
30
265
15
VON = 0V, IOUT = 2mA
0
260
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0.5
6
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
C008
C007
Figure 8. On Pin Hysteresis vs VIN
Figure 7. Output Pulldown Resistance vs VIN
6
6
VIN = 1V
VIN = 1V
VIN = 1.1V
VIN = 1.1V
VIN = 1.2V
5
VIN = 1.2V
5
VIN = 1.8V
VIN = 1.8V
VIN = 2.5V
VIN = 2.5V
4
VIN = 3.3V
VIN = 4.5V
VOUT (V)
VOUT (V)
4
VIN = 5V
3
VIN = 5.5V
25°C, V ON increases
2
6
VIN (V)
VIN (V)
VIN = 3.3V
VIN = 4.5V
VIN = 5V
3
VIN = 5.5V
25°C, V ON decreases
2
1
1
0
0
0
0.4
0.8
1.2
1.6
2
2
1.6
1.2
VON (V)
0.8
0.4
0
VON (V)
C009
C010
Figure 9. Output Voltage vs VON Rising
Figure 10. Output Voltage vs VON Falling
0.5
VIN = VON = 0V
0.0
IRC, VIN (µA)
-0.5
-1.0
-1.5
VOUT = 1.8V
-2.0
VOUT = 3.3V
VOUT = 5V
-2.5
-40
-15
10
35
60
85
Temperature (C)
C011
Figure 11. Reverse Current When Disabled vs Temperature
8
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SLVSBS6A – JUNE 2013 – REVISED JANUARY 2015
8.8 Typical Switching Characteristics
1400
5.00
-40°C
-40°C
25°C
1300
4.50
25°C
85°C
1200
85°C
4.00
1100
3.50
tOFF (µs)
tON (µs)
1000
900
800
3.00
2.50
700
2.00
600
1.50
500
CIN = 1µF, COUT = 0.1µF, ROUT = 10
, VON = 0V to 1.8V
CIN = 1µF, COUT = 0.1µF, ROUT = 10
, VON = 1.8V to 0V
400
1.00
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0.5
1
1.5
2
2.5
VIN (V)
3
3.5
4
4.5
5
5.5
C012
C013
Figure 12. Turn-On Time vs VIN
Figure 13. Turn-Off Time vs VIN
1200.00
1200.00
-40°C
1100.00
-40°C
1100.00
25°C
25°C
85°C
85°C
1000.00
1000.00
900.00
900.00
tR (µs)
tR (µs)
6
VIN (V)
800.00
800.00
700.00
700.00
600.00
600.00
500.00
500.00
CIN = 1µF, COUT = 0.1µF, ROUT = 10
VON = 0V to 1.8V
CIN = 10µF, COUT = 1µF, ROUT = 10
VON = 0V to 1.8V
400.00
400.00
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0.5
1
1.5
2
2.5
VIN (V)
3
3.5
4
4.5
5
5.5
C052
C053
Figure 14. VOUT Rise Time vs VIN
3
Figure 15. VOUT Rise Time vs VIN
1000.00
-40°C
-40°C
25°C
2.7
900.00
25°C
85°C
2.4
6
VIN (V)
85°C
800.00
2.1
700.00
tD (µs)
tF (µs)
1.8
1.5
1.2
600.00
500.00
0.9
400.00
0.6
300.00
0.3
CIN = 1µF, COUT = 0.1µF, ROUT = 10
VON = 1.8V to 0V
CIN = 1µF, COUT = 0.1µF, ROUT = 10
VON = 0V to 1.8V
0
200.00
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0.5
1
1.5
2
VIN (V)
2.5
3
3.5
4
4.5
5
5.5
6
VIN (V)
C014
Figure 16. VOUT Fall Time vs VIN
C015
Figure 17. Delay Time vs VIN
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8.9 Typical AC Scope Captures at TA = 25ºC
10
Figure 18. Turn-On Response Time (VIN = 5.5 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 19. Turn-Off Response Time (VIN = 5.5 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 20. Turn-On Response Time (VIN = 5 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 21. Turn-Off Response Time (VIN = 5 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 22. Turn-On Response Time (VIN = 4.5 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 23. Turn-Off Response Time (VIN = 4.5 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
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Typical AC Scope Captures at TA = 25ºC (continued)
Figure 24. Turn-On Response Time (VIN = 3.3 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 25. Turn-Off Response Time (VIN = 3.3 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 26. Turn-On Response Time (VIN = 2.5 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 27. Turn-Off Response Time (VIN = 2.5 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 28. Turn-On Response Time (VIN = 1.8 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 29. Turn-Off Response Time (VIN = 1.8 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
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Typical AC Scope Captures at TA = 25ºC (continued)
12
Figure 30. Turn-On Response Time (VIN = 1.2 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 31. Turn-Off Response Time (VIN = 1.2 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 32. Turn-On Response Time (VIN = 1.1 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 33. Turn-Off Response Time (VIN = 1.1 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 34. Turn-On Response Time (VIN = 1 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
Figure 35. Turn-Off Response Time (VIN = 1 V, CIN = 1 µF,
COUT = 0.1 µF, ROUT = 10 Ω)
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9 Parametric Measurement Information
VIN
VOUT
CIN = 1µF
+
-
COUT
ON
ROUT
ON
(A)
OFF
TPS22963/64
GND
Figure 36. Test Circuit
50%
50%
VON
tOFF
tON
50%
VOUT
50%
tF
tR
90%
VOUT
10%
10%
90%
10%
tD
A.
Rise and fall times of the control signal are 100 ns.
Figure 37. Timing Waveforms
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10 Detailed Description
10.1 Overview
The TPS22963/64 is a single channel, 3-A load switch in a small, space saving CSP-6 package. These devices
implement an N-channel MOSFET to provide an ultra-low On-resistance for a low voltage drop across the
device. A controlled rise time is used in applications to limit the inrush current.
10.2 Functional Block Diagram
VIN
Reverse
Current
Protection
Charge
Pump
ON
Control
Logic
Driver
VOUT
TPS22964 only
QOD
GND
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10.3 Feature Description
10.3.1 On/Off Control
The ON pin controls the state of the switch. It is an active “High” pin and has a low threshold making it capable of
interfacing with low voltage GPIO control signals. It can be used with any microcontroller with 1.2 V, 1.8 V, 2.5 V,
3.3 V or 5.5 V GPIOs. Applying VIH on the ON pin will put the switch in the ON-state and VIL will put the switch in
the OFF-state.
10.3.2 Quick Output Discharge
The TPS22964 includes the Quick Output Discharge (QOD) feature. When the switch is disabled, a discharge
resistance with a typical value of 273Ω is connected between the output and ground. This resistance pulls down
the output and prevents it from floating when the device is disabled.
10.4 Device Functional Modes
Table 1. Function Table
(1)
(2)
OUTPUT DISCHARGE (1)
ON
VIN to VOUT
L
OFF
ACTIVE
H
ON
DISABLED
(2)
This feature discharges the output of the switch to ground through a 273 Ω resistor, preventing the
output from floating.
This feature is in the TPS22964 device only (not in the TPS22963).
11 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
11.1 Application Information
11.1.1 Input Capacitor
It is recommended to place a capacitor (CIN) between VIN and GND pins of TPS22963/64. This capacitor helps
to limit the voltage drop on the input voltage supply when the switch turns ON into a discharged load capacitor. A
1-µF ceramic capacitor that is placed close to the IC pins is usually sufficient. Higher values of CIN can be used
to further reduce the voltage drop in high current applications.
11.1.2 Output Capacitor
It is recommended to place a capacitor (COUT) between VOUT and GND pins of TPS22963/64. This capacitor
acts as a low pass filter along with the switch ON-resistance to remove any voltage glitches coming from the
input voltage source. It is generally recommended to have CIN greater than COUT so that once the switch is
turned ON, COUT can charge up to VIN without VIN dropping significantly. A 0.1-µF ceramic capacitor that is
placed close to the IC pins is usually sufficient.
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Application Information (continued)
11.1.3 Standby Power Reduction
Always ON
module
Li-Ion 1S battery or
DC/DC controller
VIN
CIN
VOUT
ON
µP GPIO
COUT
TPS22963/
TPS22964
Standby
module
GND
Figure 38. Standby Power Reduction
Any end equipment that is being powered from the battery has a need to reduce current consumption in order to
keep the battery charged for a longer time. TPS22963/64 helps to accomplish this by turning off the supply to the
modules that are in standby state and hence significantly reduces the leakage current overhead of the standby
modules.
11.1.4 Reverse Current Protection
The reverse current protection feature prevents the current to flow from VOUT to VIN when TPS22963/64 is
disabled. This feature is particularly useful when the output of TPS22963/64 needs to be driven by another
voltage source after TPS22963/64 is disabled (for example in a power multiplexer application). In order for this
feature to work, TPS22963/64 has to be disabled and either of the following conditions shall be met: VIN > 1 V or
VOUT > 1 V.
Figure 39 demonstrates the ideal behavior of reverse current protection circuit in TPS22963/64. After the device
is disabled via the ON pin and VOUT is forced to an external voltage VFORCE, a very small amount of current
given by IRC,VIN will flow from VOUT to VIN. This will prevent any extra current loading on the voltage source
supplying the VFORCE voltage.
VIN
VSRC
Time
VON
VIH
Reverse current
protection disabled
VOUT
VSRC – (IOUT*RON)
VFORCE
Reverse current
protection enabled
Time
Due to QOD in
TPS22964
Time
IVIN
IOUT
IRC, VIN
Time
IVIN = Current through VIN pin.
VSRC = Input voltage applied to the device.
VFORCE = External voltage source forced at VOUT pin of the device.
IOUT = Output load current.
Figure 39. Reverse Current Protection
16
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Application Information (continued)
11.1.5 Power Supply Sequencing Without a GPIO Input
Li-Ion 1S battery or
DC/DC controller
VIN
CIN
VOUT
TPS22963/
TPS22964
ON
GND
VIN
VOUT
TPS22963/
TPS22964
ON
COUT1
Module 1
COUT2
Module 2
GND
Figure 40. Power Supply Sequencing Without a GPIO Input
In many end equipments, there is a need to power up various modules in a pre-determined manner.
TPS22963/64 can solve the problem of power sequencing without adding any complexity to the overall system.
Figure 40 shows the configuration required for powering up two modules in a fixed sequence. The output of the
first load switch is tied to the enable of the second load switch, so when Module 1 is powered the second load
switch is enabled and Module 2 is powered.
11.2 Typical Application
TPS22963/64 is an ultra-low ON-resistance, 3-A integrated load switch that is capable of interfacing directly with
1S battery in portable consumer devices such as smartphones, tablets etc. Its wide input voltage range (1 V to
5.5 V) makes it suitable to be used for lower voltage rails as well inside different end equipments to accomplish
power sequencing, inrush current control and reducing leakage current in sub-systems that are in standby mode.
Figure 41 shows the typical application circuit of TPS22963/64.
LOAD
Li-ion
Battery
VIN
ON
CIN
OFF
ON
VOUT
TPS22963/
TPS22964
COUT
ROUT
GND
Figure 41. Typical Application Circuit
11.2.1 Design Requirements
DESIGN PARAMETER
EXAMPLE VALUE
VIN
3.3 V
CL
4.7 µF
Maximum Acceptable Inrush Current
30 mA
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11.2.2 Detailed Design Procedure
11.2.2.1 Managing Inrush Current
When the switch is enabled, the output capacitors must be charged up from 0 V to the set value (3.3 V in this
example). This charge arrives in the form of inrush current. Inrush current can be calculated using the following
equation:
dV
IINRUSH = CL ´ OUT
dt
where
•
•
•
C = output capacitance
dV = output voltage
dt = rise time
(1)
The TPS22963/64 offers a controlled rise time for minimizing inrush current. This device can be selected based
upon the minimum acceptable rise time which can be calculated using the design requirements and the inrush
current equation. An output capacitance of 4.7 µF will be used since the amound of inrush current increases with
output capacitance:
30 mA = 4.7 µF x 3.3 V / dt
dt = 517 µs
(2)
(3)
To ensure an inrush current of less than 30 mA, a device with a rise time greater than 517 µs must be used. The
TPS22963/64 has a typical rise time of 715 µs at 3.3 V which meets the above design requirements.
11.2.3 Application Curves
Figure 42. TPS22963/64 Inrush Current with 4.7 µF Output Capacitor
18
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12 Power Supply Recommendations
The device is designed to operate with a VIN range of 1 V to 5.5 V. This supply must be well regulated and
placed as close to the device terminal as possible with the recommended 1 µF bypass capacitor. If the supply is
located more than a few inches from the device terminals, additional bulk capacitance may be required in
addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or
ceramic capacitor of 10 µF may be sufficient
13 Layout
13.1 Layout Guidelines
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal operation. Using wide traces for VIN, VOUT and GND will help minimize the parasitic electrical effects.
For higher reliability, the maximum IC junction temperature, TJ(max), should be restricted to 125˚C under normal
operating conditions. Junction temperature is directly proportional to power dissipation in the device and the two
are related by Equation 4.
TJ = TA + QJA ´ PD
where
•
•
•
•
TJ = Junction temperature of the device
TA = Ambient temperature
PD = Power dissipation inside the device
ӨJA = Junction to ambient thermal resistance. See Thermal Information section of the datasheet. This
parameter is highly dependent on board layout.
(4)
13.2 Layout Example
Figure 43. Layout Example
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14 Device and Documentation Support
14.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 2. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TPS22963C
Click here
Click here
Click here
Click here
Click here
TPS22964C
Click here
Click here
Click here
Click here
Click here
14.2 Trademarks
Ultrabook is a trademark of Intel Corporation in the U.S. and/or other countries.
All other trademarks are the property of their respective owners.
14.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
14.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
15 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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13-Aug-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS22963CYZPR
ACTIVE
DSBGA
YZP
6
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
BD
Samples
TPS22963CYZPT
ACTIVE
DSBGA
YZP
6
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
BD
Samples
TPS22964C2YZPR
ACTIVE
DSBGA
YZP
6
6000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
DK
Samples
TPS22964CYZPR
ACTIVE
DSBGA
YZP
6
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
DK
Samples
TPS22964CYZPT
ACTIVE
DSBGA
YZP
6
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
DK
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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