TPS22965-Q1
SLVSCI3E – APRIL 2014 – REVISED JULY 2022
TPS22965x-Q1 5.5-V, 4-A, 16-mΩ On-Resistance Automotive Load Switch
1 Features
3 Description
•
The TPS22965x-Q1 is a small, ultra-low-RON, singlechannel load switch with controlled turn-on. The
device contains an N-channel MOSFET that can
operate over an input voltage range of 0.8 V to 5.5
V and can support a maximum continuous current
of 4 A. The VOUT rise time is configurable so that
inrush current can be reduced. The TPS22965-Q1
and TPS22965W-Q1 devices include a 225-Ω on-chip
load resistor for quick output discharge when the
switch is turned off.
•
•
•
•
•
•
•
•
•
Device Information (1)
PART NUMBER
PACKAGE
TPS22965-Q1
2.00 mm × 2.00 mm
TPS22965W-Q1
Automotive electronics
Infotainment
ADAS (Advanced Driver Assistance Systems)
DSG0008B
WSON (8)
TPS22965NW-Q1
(1)
BODY SIZE (NOM)
DSG0008A
WSON (8)
TPS22965N-Q1
2 Applications
•
•
•
The TPS22965x-Q1 devices are available in a
small, space-saving 2-mm × 2-mm 8-pin WSON
package (DSG0008A) with integrated thermal pad
allowing for high power dissipation. The TPS22965Q1 and TPS22965N-Q1 devices are characterized
for operation over the free-air temperature range
of –40°C to 105°C. Furthermore, the TPS22965WQ1 and TPS22965NW-Q1 devices feature wettable
flanks in the same WSON package (DSG0008B)
and it is characterized for operation over the free-air
temperature range of –40°C to +125°C.
For all available packages, see the orderable addendum at
the end of the data sheet.
40
40qC
25qC
105qC
125qC
VOUT
VIN
Power
Supply
35
CIN
ON
ON
CL
30
RL
CT
OFF
GND
GND
VBIAS
TPS22965x-Q1
Simplified Schematic
RON (m:)
•
Qualified for automotive applications
– AEC-Q100 qualified
– Device temperature grade 2: –40°C to +105°C
(TPS22965-Q1, TPS22965N-Q1)
– Device temperature grade 1: –40°C to +125°C
(TPS22965W-Q1, TPS22965NW-Q1)
– Device HBM ESD classification level 3A
– Device CDM ESD classification level C6
Functional Safety-Capable
– Documentation available to aid functional safety
system design
Integrated single channel load switch
Input voltage range: 0.8 V to 5.5 V
Ultra-low on resistance (RON)
– RON = 16 mΩ at VIN = 5 V (VBIAS = 5 V)
– RON = 16 mΩ at VIN = 3.6 V (VBIAS = 5 V)
– RON = 16 mΩ at VIN = 1.8 V (VBIAS = 5 V)
4-A maximum continuous switch current
Low quiescent current (50 µA)
Low control input threshold enables use of
1.2-, 1.8-, 2.5- and 3.3-V logic
Configurable rise time
Quick Output Discharge (QOD) (TPS22965-Q1
and TPS22965W-Q1 only)
WSON 8-pin package with thermal pad
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
VIN (V)
3.5
4
4.5
5
5.5
D008
RON vs VIN (VBIAS = 5 V, IOUT = –200 mA)
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22965-Q1
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SLVSCI3E – APRIL 2014 – REVISED JULY 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings........................................ 4
7.2 ESD Ratings............................................................... 4
7.3 Recommended Operating Conditions.........................4
7.4 Thermal Information....................................................5
7.5 Electrical Characteristics—VBIAS = 5 V....................... 5
7.6 Electrical Characteristics—VBIAS = 2.5 V.................... 7
7.7 Switching Characteristics............................................9
7.8 Typical Characteristics.............................................. 10
8 Parameter Measurement Information.......................... 15
9 Detailed Description......................................................16
9.1 Overview................................................................... 16
9.2 Functional Block Diagram......................................... 16
9.3 Feature Description...................................................17
9.4 Device Functional Modes..........................................17
10 Application and Implementation................................ 18
10.1 Application Information........................................... 18
10.2 Typical Application.................................................. 19
11 Power Supply Recommendations..............................21
12 Layout...........................................................................21
12.1 Layout Guidelines................................................... 21
12.2 Layout Example...................................................... 21
12.3 Thermal Consideration............................................21
13 Device and Documentation Support..........................22
13.1 Documentation Support.......................................... 22
13.2 Receiving Notification of Documentation Updates..22
13.3 Support Resources................................................. 22
13.4 Trademarks............................................................. 22
13.5 Electrostatic Discharge Caution..............................22
13.6 Glossary..................................................................22
14 Mechanical, Packaging, and Orderable
Information.................................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (December 2019) to Revision E (July 2022)
Page
• Updated the numbering format for tables, figures and cross-references throughout the document ..................1
• Added the word “Automotive” to the document title ...........................................................................................1
• Updated the ESD Ratings table for automotive devices.....................................................................................4
• Added line item in the Recommended Operating Conditions table for VIL voltage at VBIAS = 2 V to 2.5 V......4
• Added line item in Electrical Characteristics—VBIAS = 2 V to 2.5 V for QOD resistance at VBIAS = 2 V........... 7
• Expanded VBIAS minimum rating from 2.5 V to 2 V.......................................................................................... 7
Changes from Revision C (September 2016) to Revision D (December 2019)
Page
• Added Functional safety capable link to the Features section ...........................................................................1
Changes from Revision B (December 2015) to Revision C (September 2016)
Page
• Added package designators in the Description section and Thermal Information table..................................... 1
Changes from Revision A (June 2015) to Revision B (December 2015)
Page
• Updated status of TPS22965W-Q1 part to ACTIVE........................................................................................... 1
• Added 125°C temperature performance to typical AC timing parameters........................................................12
Changes from Revision * (April 2014) to Revision A (June 2015)
Page
• Added TPS22965N-Q1 part number. .................................................................................................................1
• Updated Thermal Information table.................................................................................................................... 5
• Updated typical AC timing parameters (tables, graphs and scope captures) ..................................................12
2
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5 Device Comparison Table
DEVICE
RON AT 3.3 V (TYP)
QUICK OUTPUT
DISCHARGE
PACKAGE WITH
WETTABLE
FLANKS
MAXIMUM OUTPUT
CURRENT
TEMPERATURE
RANGE
TPS22965-Q1
16 mΩ
Yes
No
4A
–40°C to +105°C
TPS22965N-Q1
16 mΩ
No
No
4A
–40°C to +105°C
TPS22965W-Q1
16 mΩ
Yes
Yes
4A
–40°C to +125°C
TPS22965NW-Q1
16 mΩ
No
Yes
4A
–40°C to +125°C
6 Pin Configuration and Functions
VIN
1
VIN
2
8
VOUT
7
VOUT
6
CT
5
GND
Thermal
ON
3
VBIAS
4
Pad
Figure 6-1. DSG Package 8-Pin WSON with Exposed Thermal Pad Top View
Table 6-1. Pin Functions
PIN
I/O
DESCRIPTION
VIN
I
Switch input. Input bypass capacitor recommended for minimizing VIN dip. Must be connected to
Pin 1 and Pin 2. See the Application and Implementation section for more information
3
ON
I
Active high switch control input. Do not leave floating
4
VBIAS
I
Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2 V to 5.5
V. See the Application and Implementation section for more information
5
GND
—
Device ground
6
CT
O
Switch slew rate control. Can be left floating. See the Application and Implementation section for
more information
VOUT
O
Switch output
Thermal pad
—
Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See the Layout
section for layout guidelines
NO.
1
2
7
8
—
NAME
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1) (2)
MIN
MAX
UNIT (2)
VIN
Input voltage
–0.3
6
V
VOUT
Output voltage
–0.3
6
V
VBIAS
Bias voltage
–0.3
6
V
VON
On voltage
–0.3
6
V
IMAX
Maximum continuous switch current
4
A
IPLS
Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle
TJ
Maximum junction temperature
TSTG
Storage temperature
(1)
(2)
–65
6
A
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
All voltage values are with respect to network ground pin.
7.2 ESD Ratings
VALUE
Human body model (HBM), per AEC Q100- 002
HBM classification level 3A
V(ESD)
(1)
Electrostatic discharge
UNIT
(1)
Charged device model (CDM), per AEC Q100- 011
CDM classification level C6
±4000
V
±1500
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VIN
Input voltage
0.8
VBIAS
V
VBIAS
Bias voltage
2
5.5
V
VON
ON voltage
0
5.5
V
VOUT
Output voltage
VIH
High-level input voltage, ON
VIL
Low-level input voltage, ON
CIN
Input capacitor
TA
Operating free-air temperature (2)
(1)
(2)
4
VIN
V
VBIAS = 2.5 V to 5.5 V
1.2
5.5
V
VBIAS = 2.5 V to 5.5 V
0
0.5
V
0
0.45
VBIAS = 2 V to 2.5 V
1 (1)
V
µF
TPS22965N-Q1, TPS22965-Q1
–40
105
TPS22965NW-Q1, TPS22965W-Q1
–40
125
°C
See the Application and Implementation section.
In applications where high power dissipation, poor package thermal resistance is present, the maximum ambient temperature can be
derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the maximum
power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part, package in the
application (RJθA), as given by the following equation: TA(max) = TJ(max) – (RθJA × PD(max)).
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7.4 Thermal Information
TPS22965-Q1, TPS22965N-Q1
TPS22965W-Q1, TPS22965NW-Q1
DSG0008A (WSON)
DSG0008B (WSON)
THERMAL METRIC(1)
UNIT
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
72.3
67.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
96.1
95
°C/W
RθJB
Junction-to-board thermal resistance
42.1
37.4
°C/W
ψJT
Junction-to-top characterization parameter
3.3
2.9
°C/W
ψJB
Junction-to-board characterization parameter
42.5
37.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
13.2
8
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics—VBIAS = 5 V
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature:
–40°C ≤ TA ≤ +105°C (TPS22965N-Q1, TPS22965-Q1), –40°C ≤ TA ≤ +125°C (TPS22965NW-Q1, TPS22965W-Q1).
Typical values are for TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ VBIAS
VBIAS quiescent current
IOUT = 0 mA,
VIN = VON = VBIAS = 5 V
ISD VBIAS
VBIAS shutdown current
VON = GND, VOUT = 0 V
VIN = 5 V
ISD VIN
VIN off-state supply current
VON = GND,
VOUT = 0 V
VIN = 3.3 V
VIN = 1.8 V
VIN = 0.8 V
ION
ON pin input leakage current VON = 5.5 V
–40°C to +105°C
50
75
–40°C to +125°C
50
75
–40°C to +105°C
2
–40°C to +125°C
2
–40°C to +105°C
0.2
–40°C to +125°C
–40°C to +105°C
8
3
13
0.01
–40°C to +125°C
–40°C to +105°C
µA
36
0.02
–40°C to +125°C
–40°C to +105°C
µA
2
µA
6
0.005
1
–40°C to +125°C
4
–40°C to +105°C
0.5
–40°C to +125°C
0.5
µA
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7.5 Electrical Characteristics—VBIAS = 5 V (continued)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature:
–40°C ≤ TA ≤ +105°C (TPS22965N-Q1, TPS22965-Q1), –40°C ≤ TA ≤ +125°C (TPS22965NW-Q1, TPS22965W-Q1).
Typical values are for TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP MAX UNIT
RESISTANCE CHARACTERISTICS
25°C
VIN = 5 V
16
–40°C to +105°C
965N-Q1, 965-Q1
25
–40°C to +105°C
965NW-Q1, 965W-Q1
26
mΩ
–40°C to +125°C
25°C
VIN = 3.3 V
RON
ON-state resistance
28
16
25
–40°C to +105°C
965NW-Q1, 965W-Q1
26
–40°C to +125°C
27
mΩ
16
25
–40°C to +105°C
965NW-Q1, 965W-Q1
26
25°C
VIN = 1.5 V
mΩ
27
16
25
–40°C to +105°C
965NW-Q1, 965W-Q1
26
25°C
mΩ
27
16
25
–40°C to +105°C
965NW-Q1, 965W-Q1
26
25°C
RPD (1)
(1)
6
Output pulldown resistance
VIN = 5 V, VON = 0 V, IOUT = 1 mA
23
–40°C to +105°C
965N-Q1, 965-Q1
mΩ
–40°C to +125°C
VIN = 0.8 V
23
–40°C to +105°C
965N-Q1, 965-Q1
–40°C to +125°C
VIN = 1.2 V
23
–40°C to +105°C
965N-Q1, 965-Q1
–40°C to +125°C
IOUT = –200 mA,
VBIAS = 5 V
23
–40°C to +105°C
965N-Q1, 965-Q1
25°C
VIN = 1.8 V
23
27
16
23
–40°C to +105°C
965N-Q1, 965-Q1
25
–40°C to +105°C
965NW-Q1, 965W-Q1
26
–40°C to +125°C
27
mΩ
–40°C to +105°C
225
300
–40°C to +125°C
225
300
Ω
TPS22965-Q1 and TPS22965W-Q1 only.
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7.6 Electrical Characteristics—VBIAS = 2.5 V
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature:
–40°C ≤ TA ≤ +105°C (TPS22965N-Q1, TPS22965-Q1), –40°C ≤ TA ≤ +125°C (TPS22965NW-Q1, TPS22965W-Q1).
Typical values are for TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ VBIAS
VBIAS quiescent current
IOUT = 0 mA,
VIN = VON = VBIAS = 2.5 V
ISD VBIAS
VBIAS shutdown current
VON = GND, VOUT = 0 V
VIN = 2.5 V
ISD VIN
VIN off-state supply current
VON = GND,
VOUT = 0 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
ION
ON pin input leakage current VON = 5.5 V
–40°C to +105°C
20
30
–40°C to 125°C
20
30
–40°C to +105°C
2
–40°C to 125°C
2
–40°C to +105°C
0.01
–40°C to 125°C
–40°C to +105°C
3
2
6
0.005
–40°C to 125°C
–40°C to +105°C
µA
13
0.01
–40°C to 125°C
–40°C to +105°C
µA
2
µA
6
0.003
1
–40°C to 125°C
4
–40°C to +105°C
0.5
–40°C to +125°C
0.5
µA
RESISTANCE CHARACTERISTICS
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7.6 Electrical Characteristics—VBIAS = 2.5 V (continued)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature:
–40°C ≤ TA ≤ +105°C (TPS22965N-Q1, TPS22965-Q1), –40°C ≤ TA ≤ +125°C (TPS22965NW-Q1, TPS22965W-Q1).
Typical values are for TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
25°C
VIN = 2.5 V
20
28
–40°C to 105°C
965NW-Q1, 965W-Q1
32
–40°C to +125°C
34
mΩ
19
28
–40°C to +105°C
965NW-Q1, 965W-Q1
30
25°C
RON
ON-state resistance
VIN = 1.5 V
mΩ
32
18
27
–40°C to +105°C
965NW-Q1/965W-Q1
29
25°C
mΩ
RPD (1)
(1)
8
Output pulldown resistance
VBIAS = VIN = 2.5 V, VON = 0 V, IOUT
= 1 mA
VBIAS = VIN = 2 V, VON = 0 V, IOUT =
1 mA
31
18
25
–40°C to +105°C
965N-Q1, 965-Q1
27
–40°C to +105°C
965NW-Q1, 965W-Q1
28
–40°C to +125°C
30
25°C
VIN = 0.8 V
25
–40°C to +105°C
965N-Q1, 965-Q1
–40°C to +125°C
VIN = 1.2 V
26
–40°C to +105°C
965N-Q1, 965-Q1
–40°C to +125°C
IOUT = –200 mA,
VBIAS = 2.5 V
26
–40°C to +105°C
965N-Q1, 965-Q1
25°C
VIN = 1.8 V
TYP MAX UNIT
mΩ
17
25
–40°C to +105°C
965N-Q1, 965-Q1
27
–40°C to +105°C
965NW-Q1, 965W-Q1
28
–40°C to +125°C
30
–40°C to +105°C
mΩ
275
–40°C to +125°C
–40°C to +125°C
325
330
310
470
Ω
Ω
TPS22965-Q1 and TPS22965W-Q1 only.
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7.7 Switching Characteristics
Over operating free-air temperature range (unless otherwise noted). These switching characteristics are only valid for the
power-up sequence where VIN and VBIAS are already in steady state condition before the ON pin is asserted high.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = VON = VBIAS = 5 V, TA = 25°C (unless otherwise noted)
tON
Turn-on time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
1600
µs
tOFF
Turn-off time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
9
µs
tR
VOUT rise time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
1985
µs
tF
VOUT fall time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
3
µs
tD
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
660
µs
VIN = 0.8 V, VON = VBIAS = 5 V, TA = 25°C (unless otherwise noted)
tON
Turn-on time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
730
µs
tOFF
Turn-off time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
100
µs
tR
VOUT rise time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
380
µs
tF
VOUT fall time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
8
µs
tD
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
560
µs
VIN = 2.5 V, VON = 5 V, VBIAS = 2.5 V, TA = 25°C (unless otherwise noted)
tON
Turn-on time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
2435
µs
tOFF
Turn-off time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
9
µs
tR
VOUT rise time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
2515
µs
tF
VOUT fall time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
4
µs
tD
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
1230
µs
VIN = 0.8 V, VON = 5 V, VBIAS = 2.5 V, TA = 25°C (unless otherwise noted)
tON
Turn-on time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
1565
µs
tOFF
Turn-off time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
70
µs
tR
VOUT rise time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
930
µs
tF
VOUT fall time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
8
µs
tD
ON delay time
RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF, CIN = 1 µF
1110
µs
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7.8 Typical Characteristics
7.8.1 Typical DC Characteristics
TA = 125°C data is only applicable to TPS22965NW-Q1 and TPS22965W-Q1.
70
100
40qC
25qC
105qC
125qC
60
80
70
IO VBIAS (PA)
IO VBIAS (PA)
50
40qC
25qC
105qC
125qC
90
40
30
60
50
40
30
20
20
10
10
0
0
2
2.5
3
3.5
4
4.5
5
5.5
VBIAS (V)
VIN = 1.8 V
6
0
0.5
1
VON = 5 V
VOUT = 0 V
2
2.5
VBIAS = 5 V
Figure 7-1. VBIAS Quiescent Current vs VBIAS
3 3.5
VIN (V)
4
4.5
5
5.5
6
D002
VON = 5 V
VOUT = 0 V
Figure 7-2. IQ VBIAS vs VIN
0.9
5
40qC
25qC
105qC
125qC
0.8
0.7
40qC
25qC
105qC
125qC
4
0.6
3
ISD VIN (PA)
ISD VBIAS (PA)
1.5
D001
0.5
0.4
0.3
2
1
0.2
0
0.1
0
-1
2
2.5
3
3.5
4
4.5
VBIAS (V)
VIN = 5 V
5
5.5
6
0
0.5
VON = 0 V
VOUT = 0 V
1.5
VBIAS = 5 V
Figure 7-3. ISD VBIAS vs VBIAS
2
2.5
3
VIN (V)
3.5
4
4.5
5
5.5
D004
VON = 0 V
VOUT = 0 V
Figure 7-4. ISD VIN vs VIN
40
40
35
1
D003
VIN = 0.8 V
VIN = 1.8 V
VIN = 2.5 V
VIN = 0.8 V
VIN = 3.3 V
VIN = 5 V
35
30
25
RON (m:)
RON (m:)
30
20
15
25
20
10
15
5
0
-50
0
VBIAS = 2.5 V
50
Temperature (qC)
100
150
0
D005
IOUT = –200 mA
VON = 5.5 V
All three RON curves have the same
values and hence only one line is visible.
Figure 7-5. RON vs Ambient Temperature
10
10
-50
50
Temperature (qC)
100
150
D006
VBIAS = 5 V
IOUT = –200 mA
VON = 5.5 V
Note: All three RON curves have the same values; therefore,
only one line is visible.
Figure 7-6. RON vs Ambient Temperature
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7.8.1 Typical DC Characteristics (continued)
40
40
40qC
25qC
105qC
125qC
35
30
25
RON (m:)
RON (m:)
30
40qC
25qC
105qC
125qC
35
20
15
10
25
20
15
10
5
5
0
0
0
0.5
1
VBIAS = 2.5 V
1.5
VIN (V)
2
2.5
3
0
0.5
1
1.5
2
2.5
3
VIN (V)
D007
IOUT = –200 mA
VON = 5.5 V
VBIAS = 5 V
Figure 7-7. RON vs VIN
3.5
4
4.5
5
5.5
D008
IOUT = –200 mA
VON = 5.5 V
Figure 7-8. RON vs VIN
320
300
VIN = 1.8V
22
VIN = 2.5V
20
280
VIN = 3.3V
RPD (:)
RON (mŸ)
40qC
25qC
105qC
125qC
VIN = 0.8V
24
18
16
260
240
14
220
12
200
10
2
2.5
3
3.5
4
4.5
5
5.5
VBIAS (V)
TA = 25°C
2
6
2.5
VON = 5.5 V
4
4.5
VBIAS (V)
5
5.5
6
D011
VON = 0 V
Figure 7-10. RPD vs VBIAS
Figure 7-9. RON vs VBIAS
2.5
30
-40ƒC
28
2
25ƒC
26
105ƒC
24
RON (mŸ)
1.5
VOUT (V)
3.5
VIN = 1.8 V
C001
IOUT = –200 mA
3
1
VBIAS = 2.5V
0.5
20
18
16
VBIAS = 3.3V
0
22
14
VBIAS = 5V
12
VBIAS = 5.5V
-0.5
10
0.5
0.6
0.7
0.8
0.9
1
1.1
VON (V)
VIN = 2 V
TA = 25°C
1.2
1.3
1.4
1.5
0
0.5
1
1.5
2
VIN (V)
C001
VBIAS = 2.5 V
Figure 7-11. VOUT vs VON
IOUT = –4 A
2.5
3
C001
VON = 5.5 V
Figure 7-12. RON vs VIN
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7.8.1 Typical DC Characteristics (continued)
30
-40ƒC
28
25ƒC
26
105ƒC
RON (mŸ)
24
22
20
18
16
14
12
10
0
1
2
3
4
5
6
VIN (V)
VBIAS = 5 V
C001
IOUT = –4 A
VON = 5.5 V
Figure 7-13. RON vs VIN
7.8.2 Typical Switching Characteristics
TA = 25°C, CT = 1000 pF, CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω (unless otherwise specified). TA = 125°C data is only applicable
to TPS22965NW-Q1 and TPS22965W-Q1.
1600
900
-40°C
-40°C
1400
25°C
105°C
700
105°C
125°C
tD (µs)
tD (µs)
1200
25°C
800
1000
800
125°C
600
500
400
600
300
400
200
0.0
0.5
1.0
1.5
2.0
2.5
VIN (V)
VBIAS = 2.5 V
3.0
0.0
1.0
2.0
3.0
4.0
CT = 1000 pF
VBIAS = 5 V
Figure 7-14. tD vs VIN
C001
CT = 1000 pF
12
-40°C
-40°C
25°C
10
25°C
10
105°C
105°C
8
8
125°C
tF (µs)
tF (µs)
6.0
Figure 7-15. tD vs VIN
12
6
125°C
6
4
4
2
2
0
0
0.0
0.5
1.0
1.5
VIN (V)
VBIAS = 2.5 V
CT = 1000 pF
2.0
2.5
3.0
0.0
1.0
2.0
3.0
VIN (V)
C001
VBIAS = 5 V
Figure 7-16. tF vs VIN
12
5.0
VIN (V)
C001
4.0
5.0
6.0
C001
CT = 1000 pF
Figure 7-17. tF vs VIN
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7.8.2 Typical Switching Characteristics (continued)
160
120
-40°C
25°C
105°C
120
105°C
125°C
100
125°C
tOFF (µs)
80
tOFF (µs)
-40°C
140
25°C
100
60
80
60
40
40
20
20
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
VIN (V)
1.0
3.0
4.0
5.0
6.0
VIN (V)
VBIAS = 2.5 V
CT = 1000 pF
Note: The 105°C and 125°C curves have
similar values; therefore, only one line is
visible.
C001
VBIAS = 5 V
CT = 1000 pF
Note: The 105°C and 125°C curves have
similar values; therefore, only one line is
visible.
Figure 7-18. tOFF vs VIN
Figure 7-19. tOFF vs VIN
3500
2000
-40°C
3000
25°C
2500
105°C
25°C
1600
105°C
1400
125°C
2000
-40°C
1800
tON (µs)
tON (µs)
2.0
C001
1500
125°C
1200
1000
800
600
1000
400
500
200
0
0
0.0
0.5
1.0
1.5
2.0
2.5
VIN (V)
VBIAS = 2.5 V
3.0
0.0
1.0
3.0
4.0
5.0
VIN (V)
CT = 1000 pF
VBIAS = 5 V
Figure 7-20. tON vs VIN
6.0
C001
CT = 1000 pF
Figure 7-21. tON vs VIN
2500
3500
-40°C
3000
25°C
2500
105°C
-40°C
105°C
125°C
2000
25°C
2000
tR (µs)
tR (µs)
2.0
C001
1500
125°C
1500
1000
1000
500
500
0
0
0.0
0.5
1.0
1.5
VIN (V)
2.0
2.5
3.0
0.0
VBIAS = 2.5 V
CT = 1000 pF
Note: The 105°C and 125°C curves have similar values;
therefore, only one line is visible.
1.0
2.0
3.0
4.0
5.0
VIN (V)
C001
6.0
C001
VBIAS = 5 V
CT = 1000 pF
Note: The 105°C and 125°C curves have similar values;
therefore, only one line is visible.
Figure 7-22. tR vs VIN
Figure 7-23. tR vs VIN
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7.8.2 Typical Switching Characteristics (continued)
VIN = 0.8 V
CL = 0.1 µF
VBIAS = 2.5 V
RL = 10 Ω
CIN = 1 µF
CT = 1000 pF
Figure 7-24. Turn-On Response Time
VIN = 2.5 V
CL = 0.1 µF
VBIAS = 2.5 V
RL = 10 Ω
CIN = 1 µF,
CT = 1000 pF
VBIAS = 2.5 V
RL = 10 Ω
14
CIN = 1 µF
CT = 1000 pF
VIN = 5 V
CL = 0.1 µF
VBIAS = 5 V
RL = 10 Ω
CIN = 1 µF
Figure 7-27. Turn-On Response Time
CIN = 1 µF
Figure 7-28. Turn-Off Response Time
VBIAS = 5 V
RL = 10 Ω
Figure 7-25. Turn-On Response Time
Figure 7-26. Turn-On Response Time
VIN = 0.8 V
CL = 0.1 µF
VIN = 0.8 V
CL = 0.1 µF
VIN = 0.8 V
CL = 0.1 µF
VBIAS = 5 V
RL = 10 Ω
CIN = 1 µF
Figure 7-29. Turn-Off Response Time
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7.8.2 Typical Switching Characteristics (continued)
VIN = 2.5 V
CL = 0.1 µF
VBIAS = 2.5 V
RL = 10 Ω
CIN = 1 µF
VIN = 5 V
CL = 0.1 µF
Figure 7-30. Turn-Off Response Time
VBIAS = 5 V
RL = 10 Ω)
CIN = 1 µF
Figure 7-31. Turn-Off Response Time
8 Parameter Measurement Information
VIN
VOUT
CIN = 1 µF
ON
+
–
(A)
OFF
CT
ON
CL
RL
VBIAS
TPS22965x-Q1
GND
GND
A.
GND
Rise and fall times of the control signal are 100 ns.
Figure 8-1. Test Circuit
VON
50%
50%
tOFF
tON
VOUT
50%
50%
tF
tR
90%
VOUT
10%
10%
90%
10%
tD
Figure 8-2. tON and tOFF Waveforms
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9 Detailed Description
9.1 Overview
The TPS22965x-Q1 is a single-channel, 4-A load switch in an 8-pin WSON package. To reduce the voltage
drop in high current rails, the device implements an ultra-low resistance N-channel MOSFET. The device has a
programmable slew rate for applications that require specific rise time.
The device has very low leakage current during OFF state. This low leakage prevents downstream circuits from
pulling high standby current from the supply. Integrated control logic, driver, power supply, and output discharge
FET eliminates the need for any external components, which reduces solution size and BOM count.
9.2 Functional Block Diagram
VIN
Charge
Pump
VBIAS
ON
Control
Logic
CT
VOUT
TPS22965-Q1 and
TPS22965W-Q1 Only
GND
16
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9.3 Feature Description
9.3.1 Adjustable Rise Time
A capacitor to GND on the CT pin sets the slew rate. The voltage on the CT pin can be as high as 12
V. Therefore, the minimum voltage rating for the CT cap must be 25 V for optimal performance. The below
equations shows an approximate formula for the relationship between CT and slew rate when VBIAS is set to 5 V.
This equation accounts for 10% to 90% measurement on VOUT and does not apply for CT = 0 pF. Use the below
equation to determine rise times for when CT = 0 pF.
SR = 0.38 ´ CT + 34
(1)
where
•
•
•
SR = slew rate (in µs/V).
CT = the capacitance value on the CT pin (in pF).
The units for the constant 34 are µs/V. The units for the constant 0.38 are µs/(V × pF).
Rise time can be calculated by multiplying the input voltage by the slew rate. Table 9-1 contains rise time values
measured on a typical device. The rise times listed in Table 9-1 are only valid for the power-up sequence where
VIN and VBIAS are already in steady state condition before the ON pin is asserted high.
Table 9-1. Rise Time vs CT Capacitor
CT (pF)
(1)
RISE TIME (µs) 10% - 90%, CL = 0.1 µF, CIN = 1 µF, RL = 10 Ω, VBIAS = 5 V (1)
VIN = 5 V
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.5 V
VIN = 1.2 V
VIN = 1.05 V
VIN = 0.8 V
0
180
136
94
84
74
70
60
220
547
378
232
202
173
157
129
470
962
654
386
333
282
252
206
1000
1983
1330
765
647
533
476
382
2200
4013
2693
1537
1310
1077
959
766
4700
8207
5490
3137
2693
2200
1970
1590
10000
17700
11767
6697
5683
4657
4151
3350
Typical Values at 25°C with a 25-V X7R 10% Ceramic Capacitor on CT
9.3.2 Quick Output Discharge (TPS22965-Q1 and TPS22965W-Q1 Only)
The TPS22965-Q1 and TPS22965W-Q1 include a Quick Output Discharge (QOD) feature. When the switch is
disabled, a discharge resistor is connected between VOUT and GND. This resistor has a typical value of 225 Ω
and prevents the output from floating while the switch is disabled.
9.3.3 Low Power Consumption During OFF State
The ISD VIN supply current is 0.01-µA typical at 1.8 V VIN. Typically, the downstream loads must have a
significantly higher off-state leakage current. The load switch allows system standby power consumption to be
reduced.
9.4 Device Functional Modes
The below table lists the VOUT pin state as determined by the ON pin.
Table 9-2. Functional Table
ON
TPS22965N-Q1 AND
TPS22965NW-Q1
TPS22965-Q1 AND
TPS22965W-Q1
L
Open
GND
H
VIN
VIN
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10 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
10.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
A PSPICE model for this device is also available in the product page of this device on www.ti.com for further aid.
10.1.1 VIN to VOUT Voltage Drop
The VIN to VOUT voltage drop in the device is determined by the RON of the device and the load current. The
RON of the device depends upon the VIN and VBIAS conditions of the device. Refer to the RON specification of the
device in the Electrical Characteristics—VBIAS = 2 V to 2.5 V table of this data sheet. After the RON of the device
is determined based upon the VIN and VBIAS conditions, use the following equation to calculate the VIN to VOUT
voltage drop.
DV = ILOAD ´ RON
(2)
where
•
•
•
ΔV = voltage drop from VIN to VOUT.
ILOAD = load current.
RON = On-resistance of the device for a specific VIN and VBIAS combination.
An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
10.1.2 On and Off Control
The ON pin controls the state of the switch. ON is active high and has a low threshold, making it capable of
interfacing with low-voltage signals. The ON pin is compatible with standard GPIO logic thresholds. The ON pin
can be used with any microcontroller with 1.2 V or higher GPIO voltage. This pin cannot be left floating and must
be driven either high or low for proper functionality.
10.1.3 Input Capacitor (Optional)
To limit the voltage drop on the input supply caused by transient inrush currents when the switch turns on into
a discharged load capacitor or short circuit, a capacitor must be placed between VIN and GND. A 1-µF ceramic
capacitor, CIN, placed close to the pins, is usually sufficient. Higher values of CIN can be used to further reduce
the voltage drop during high current applications. When switching heavy loads, TI recommends to have an input
capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop.
10.1.4 Output Capacitor (Optional)
Due to the integrated body diode in the NMOS switch, TI highly recommends a CI N greater than CL. A
CL greater than CIN can cause VOUT to exceed VIN when the system supply is removed. This event can result in
current flow through the body diode from VOUT to VIN. TI recommends a CIN to CL ratio of 10 to 1 for minimizing
VIN dip caused by inrush currents during startup; however, a 10 to 1 ratio for capacitance is not required for
proper functionality of the device. A ratio smaller than 10 to 1 (such as 1 to 1) can cause slightly more VIN dip
upon turn-on due to inrush currents. This event can be mitigated by increasing the capacitance on the CT pin for
a longer rise time (see the Adjustable Rise Time section).
10.1.5 VIN and VBIAS Voltage Range
For optimal RON performance, make sure VIN ≤ VBIAS. The device is still functional if VIN > VBIAS but it exhibits
RON greater than what is listed in the Electrical Characteristics—VBIAS = 2 V to 2.5 V table. See the following
18
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figure for an example of a typical device. Notice the increasing RON as VIN exceeds VBIAS voltage. Be sure to
never exceed the maximum voltage rating for VIN and VBIAS.
80
VBIAS = 2.5V
70
VBIAS = 3.3V
RON (mŸ)
60
VBIAS = 5V
50
40
30
20
10
0
0
1
2
3
4
5
6
VIN (V)
IOUT = –200 mA
C001
TA = 25°C
Figure 10-1. RON vs VIN (VIN > VBIAS)
10.2 Typical Application
This application demonstrates how the TPS22965x-Q1 can be used to power downstream modules.
VOUT
VIN
Power Supply
ON
CIN
ON
CL
RL
CT
OFF
GND
GND
VBIAS
Power Supply
TPS22965x-Q1
Figure 10-2. Schematic for Powering a Downstream Module
10.2.1 Design Requirements
Use the values listed in the following table as the design parameters.
Table 10-1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN
3.3 V
VBIAS
5V
CL
22 µF
Maximum acceptable inrush current
400 mA
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10.2.2 Detailed Design Procedure
10.2.2.1 Inrush Current
When the switch is enabled, the output capacitors must be charged up from 0 V to the set value (3.3 V in
this example). This charge arrives in the form of inrush current. Use the following equation to calculate inrush
current.
Inrush Current = C × dV/dt
(3)
where
•
•
•
C = output capacitance
dV = output voltage
dt = rise time
The TPS22965x-Q1 offers adjustable rise time for VOUT. This feature allows the user to control the inrush
current during turn-on. The appropriate rise time can be calculated using the design requirements and the inrush
current equation. See Equation 4 and Equation 5.
400 mA = 22 µF × 3.3 V / dt
(4)
dt = 181.5 µs
(5)
To ensure an inrush current of less than 400 mA, choose a CT value that yields a rise time of more than 181.5
µs. See the oscilloscope captures in the Application Curves section for an example of how the CT capacitor can
be used to reduce inrush current.
10.2.3 Application Curves
VBIAS = 5 V
VIN = 3.3 V
CL = 22 µF
Figure 10-3. Inrush Current with CT = 0 pF
20
VBIAS = 5 V
VIN = 3.3 V
CL = 22 µF
Figure 10-4. Inrush Current with CT = 220 pF
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11 Power Supply Recommendations
The device is designed to operate from a VBIAS range of 2 V to 5.5 V and a VIN range of 0.8 V to VBIAS.
12 Layout
12.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances can have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects
along with minimizing the case to ambient thermal impedance. The CT trace must be as short as possible to
avoid parasitic capacitance.
12.2 Layout Example
VIA to GND
Pin 1
VIN
(1)
VIN
VOUT
VOUT
GND
CT
ON
GND
VBIAS
A.
Thermal relief vias. Thermal relief vias connected to the exposed thermal pad.
Figure 12-1. Layout Recommendation
12.3 Thermal Consideration
The maximum IC junction temperature must be restricted to 150°C under normal operating conditions. Use the
below equation as a guideline to calculate the maximum allowable dissipation, PD(max), for a given output current
and ambient temperature.
PD(max) =
TJ(max) - TA
θJA
(6)
where
•
•
•
•
PD(max) = maximum allowable power dissipation.
TJ(max) = maximum allowable junction temperature (150°C for the TPS22965x-Q1).
TA = ambient temperature of the device.
ΘJA = junction to air thermal impedance. See the Thermal Information table. This parameter is highly
dependent upon board layout.
Refer to Figure 12-1. Notice the thermal vias located under the exposed thermal pad of the device. The thermal
vias allow for thermal diffusion away from the device.
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www.ti.com
SLVSCI3E – APRIL 2014 – REVISED JULY 2022
13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
For related documentation see the following:
• Texas Instruments, Load Switches: What Are They, Why Do You Need Them And How Do You Choose The
Right One? application note
• Texas Instruments, Load Switch Thermal Considerations application note
• Texas Instruments, Managing Inrush Current application note
• Texas Instruments, TPS22965WDSGQ1EVM 5.7-V, 4-A, 16-mΩ On-Resistance Load Switch user's guide
13.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
13.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
13.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
13.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and without
revision of this document. For browser-based versions of this data sheet, see the left-hand navigation pane.
22
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Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: TPS22965-Q1
PACKAGE OPTION ADDENDUM
www.ti.com
22-Jun-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS22965NQWDSGRQ1
ACTIVE
WSON
DSG
8
3000
RoHS & Green
SN
Level-2-260C-1 YEAR
-40 to 125
11B
Samples
TPS22965NQWDSGTQ1
ACTIVE
WSON
DSG
8
250
RoHS & Green
SN
Level-2-260C-1 YEAR
-40 to 125
11B
Samples
TPS22965NTDSGRQ1
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
ZDXI
Samples
TPS22965QWDSGRQ1
ACTIVE
WSON
DSG
8
3000
RoHS & Green
SN
Level-2-260C-1 YEAR
-40 to 125
11A
Samples
TPS22965QWDSGTQ1
ACTIVE
WSON
DSG
8
250
RoHS & Green
SN
Level-2-260C-1 YEAR
-40 to 125
11A
Samples
TPS22965TDSGRQ1
ACTIVE
WSON
DSG
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
ZYE
Samples
TPS22965TDSGTQ1
ACTIVE
WSON
DSG
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
ZYE
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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