TPS22997
SLVSGT0 – DECEMBER 2022
TPS22997 5.5-V, 10-A, 4-mΩ On-Resistance Load Switch with Adjustable Rise Time
1 Features
3 Description
•
•
•
•
•
•
•
•
•
The TPS22997 is a single-channel load switch that
provides a configurable rise time to minimize inrush
current. The device contains an N-channel MOSFET
that can operate over an input voltage range of 0.1
V to 5.5 V and can support a maximum continuous
current of 10 A.
•
•
Input operating voltage range (VIN): 0.1 V–5.5 V
Bias voltage range:1.5 V–5.5 V
Maximum continuous current: 10 A
ON-Resistance (RON): 4 mΩ (typ.)
Adjustable slew rate control
Adjustable quick output discharge (QOD)
Open drain Power Good (PG) signal
Thermal shutdown
Low power consumption:
– ON state (IQ): 10 μA (typ.)
– OFF state (ISD): 0.1 μA (typ.)
Thermal shutdown
Smart ON pin pulldown (RPD,ON)
– ON ≥ VIH (ION): 25 nA (typ.)
– ON ≤ VIL (RPD,ON): 500 kΩ (typ.)
2 Applications
•
•
•
•
Solid state drive
PC and notebooks
Industrial PC
Optical module
The switch is controlled by an enable pin (ON), which
is capable of interfacing directly with low voltage
GPIO signals (VIH = 0.8 V). The TPS22997 device
has an optional QOD pin for quick output discharge
when switch is turned off, and the fall time (tFALL)
of the output can be adjusted through an external
resistor. There is a Power Good (PG) signal on the
device that indicates when the main MOSFET is fully
turned on, which can be used to enable a downstream
load. Integrated thermal shutdown ensures protection
in high temperature environments.
The TPS22997 is available in a 1.5 × 2.0 mm,
0.5 mm pitch, 10-pin WQFN package (RYZ) and
is characterized for operation over the free-air
temperature range of –40°C to +125°C.
Device Information
PART NUMBER
TPS22997
(1)
PACKAGE(1)
WQFN (10)
BODY SIZE (NOM)
1.5 × 2.0 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
TPS22997 Typical Application
TPS22997 Block Diagram
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22997
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SLVSGT0 – DECEMBER 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics (VBIAS = 5 V)..................... 5
6.6 Electrical Characteristics (VBIAS = 3.3 V).................. 5
6.7 Electrical Characteristics (VBIAS = 1.5 V).................. 6
6.8 Switching Characteristics (VBIAS = 5 V).................... 7
6.9 Switching Characteristics (VBIAS = 3.3 V)................. 8
6.10 Switching Characteristics (VBIAS = 1.5 V)............... 8
6.11 Typical Characteristics............................................ 10
7 Parameter Measurement Information.......................... 12
8 Detailed Description......................................................13
8.1 Overview................................................................... 13
8.2 Functional Block Diagram......................................... 13
8.3 Feature Description...................................................13
8.4 Device Functional Modes..........................................14
9 Application and Implementation.................................. 16
9.1 Application Information............................................. 16
9.2 Typical Application.................................................... 16
9.3 Power Supply Recommendations.............................17
9.4 Layout....................................................................... 18
10 Device and Documentation Support..........................19
10.1 Receiving Notification of Documentation Updates..19
10.2 Support Resources................................................. 19
10.3 Trademarks............................................................. 19
10.4 Electrostatic Discharge Caution..............................19
10.5 Glossary..................................................................19
11 Mechanical, Packaging, and Orderable
Information.................................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
2
DATE
REVISION
NOTES
December 2022
*
Initial Release
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5 Pin Configuration and Functions
Figure 5-1. TPS22997 RYZ Package, 10-Pin WQFN (Top View)
Table 5-1. Pin Functions
PIN
(1)
I/O(1)
DESCRIPTION
NAME
NO.
VBIAS
1
I
Device bias supply
VIN
2, 3
I
Switch input
PG
4
O
Open drain power good signal, asserted high when the output is full load ready
GND
5
-
Device ground
QOD
6
-
Quick output discharge pin
VOUT
7, 8
O
Switch output
CT
9
I
Timing pin, can control the slew rate of the output through a capacitor to GND
ON
10
I
Enable pin
I = Input, O = Output
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VIN
Input Voltage
–0.3
6
V
VBIAS
Bias Voltage
–0.3
6
V
VON, VPG, VQOD Control Pin Voltage
VCT
CT Pin Voltage
IMAX
Maximum Current
TJ
Junction temperature
Tstg
Storage temperature
(1)
–0.3
6
V
15
V
10
A
Internally
Limited
°C
150
°C
–65
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated
under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001, all pins(1)
±2000
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins(2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input Voltage
0.1
5.5
V
VBIAS
Bias Voltage
1.5
5.5
V
VIH
ON Pin High Voltage Range
0.8
5.5
V
VIL
ON Pin Low Voltage Range
0
0.35
V
VPG, VQOD Control Pin Voltage
TA
Ambient Temperature
0
5.5
V
-40
125
°C
6.4 Thermal Information
TPS22997
THERMAL METRIC
RYZ (WQFN)
UNIT
10 PINS
4
RθJA
Junction-to-ambient thermal resistance
83.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
73.9
°C/W
RθJB
Junction-to-board thermal resistance
18.2
°C/W
ΨJT
Junction-to-top characterization parameter
2.0
°C/W
YJB
Junction-to-board characterization parameter
18.1
°C/W
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6.5 Electrical Characteristics (VBIAS = 5 V)
over operating free-air temperature range (unless otherwise noted). Typical values are specified at 25°C and VIN = 3.3V,
VBIAS = 5.5V.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
Power Consumption
25°C
ISD,VBIAS
VBIAS Shutdown Current
ON = 0V
0.1
-40°C to 85°C
-40°C to 125°C
25°C
IQ,VBIAS
VBIAS Quiescent Current
ON > VIH
-40°C to 85°C
25°C
ION
VIN Shutdown Current
ON = 0V
ON pin leakage
ON = VBIAS
On-Resistance
VIN = 5V
uA
1
uA
10
-40°C to 125°C
ISD,VIN
uA
0.5
uA
15
uA
15
uA
0.1
uA
-40°C to 85°C
1
uA
-40°C to 125°C
7
uA
-40°C to 125°C
0.1
uA
Performance
25°C
RON
4
-40°C to 85°C
-40°C to 125°C
25°C
RON
On-Resistance
VIN = 3.3V
On-Resistance
VIN = 1.8V
VIN = 1.2V
On-Resistance
VIN = 0.8V
VOL,PG
Power Good VOL
IPG = 1mA
RPD,ON
Smart Pull Down Resistance
RQOD
QOD Resistance
mΩ
6
mΩ
7
mΩ
4
-40°C to 85°C
mΩ
6
mΩ
7
mΩ
4
mΩ
-40°C to 85°C
6
mΩ
-40°C to 125°C
7
mΩ
25°C
RON
mΩ
-40°C to 125°C
25°C
On-Resistance
7
-40°C to 85°C
-40°C to 125°C
RON
mΩ
4
25°C
RON
mΩ
6
4
-40°C to 85°C
mΩ
6
mΩ
-40°C to 125°C
7
mΩ
-40°C to 125°C
0.2
25°C
500
-40°C to 125°C
kΩ
700
25°C
50
-40°C to 125°C
V
kΩ
Ω
75
Ω
190
°C
Protection
TSD
Thermal Shutdown
-
TSDHYS
Thermal Shutdown Hysteresis
-
150
170
20
°C
6.6 Electrical Characteristics (VBIAS = 3.3 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
Power Consumption
25°C
ISD,VBIAS
VBIAS Shutdown Current
ON = 0V
-40°C to 85°C
-40°C to 125°C
0.1
uA
0.5
uA
1
uA
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6.6 Electrical Characteristics (VBIAS = 3.3 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
25°C
IQ,VBIAS
VBIAS Quiescent Current
ON > VIH
VIN Shutdown Current
ON = 0V
ION
ON pin leakage
ON = VBIAS
MAX
10
UNIT
uA
-40°C to 85°C
15
uA
-40°C to 125°C
15
uA
25°C
ISD,VIN
TYP
0.1
-40°C to 85°C
-40°C to 125°C
-40°C to 125°C
uA
1
uA
7
uA
0.1
uA
4
mΩ
Performance
25°C
RON
On-Resistance
VIN = 3.3V
-40°C to 85°C
6
mΩ
-40°C to 125°C
7
mΩ
25°C
RON
On-Resistance
VIN = 1.8V
4
-40°C to 85°C
-40°C to 125°C
25°C
RON
On-Resistance
VIN = 1.2V
On-Resistance
VIN = 0.8V
VOL,PG
Power Good VOL
IPG = 1mA
RPD,ON
Smart Pull Down Resistance
RQOD
QOD Resistance
mΩ
7
mΩ
4
mΩ
-40°C to 85°C
6
mΩ
-40°C to 125°C
7
mΩ
25°C
RON
mΩ
6
4
-40°C to 85°C
mΩ
6
mΩ
-40°C to 125°C
7
mΩ
-40°C to 125°C
0.2
25°C
500
-40°C to 125°C
kΩ
700
25°C
50
-40°C to 125°C
V
kΩ
Ω
100
Ω
190
°C
Protection
TSD
Thermal Shutdown
-
TSDHYS
Thermal Shutdown Hysteresis
-
150
170
20
°C
6.7 Electrical Characteristics (VBIAS = 1.5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
Power Consumption
25°C
ISD,VBIAS
VBIAS Shutdown Current
ON = 0V
0.1
-40°C to 85°C
-40°C to 125°C
25°C
IQ,VBIAS
VBIAS Quiescent Current
ON > VIH
VIN Shutdown Current
ON = 0V
ION
ON pin leakage
ON = VBIAS
uA
1
uA
10
uA
-40°C to 85°C
15
uA
-40°C to 125°C
15
uA
25°C
ISD,VIN
uA
0.5
0.1
-40°C to 85°C
-40°C to 125°C
-40°C to 125°C
0.1
uA
1
uA
7
uA
uA
Performance
6
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6.7 Electrical Characteristics (VBIAS = 1.5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
25°C
RON
On-Resistance
VIN = 1.5V
On-Resistance
mΩ
6
mΩ
-40°C to 125°C
7
mΩ
4.5
mΩ
-40°C to 85°C
VIN = 1.2V
-40°C to 125°C
25°C
RON
On-Resistance
VOL,PG
Power Good VOL
RPD,ON
VIN = 0.8V
IPG = 1mA
RQOD
mΩ
7
mΩ
mΩ
-40°C to 85°C
6
mΩ
-40°C to 125°C
7
mΩ
0.2
25°C
500
-40°C to 125°C
55
-40°C to 125°C
V
kΩ
700
25°C
QOD Resistance
6
4.5
-40°C to 125°C
Smart Pull Down Resistance
UNIT
-40°C to 85°C
25°C
RON
MAX
4.5
kΩ
Ω
100
Ω
190
°C
Protection
TSD
Thermal Shutdown
-
TSDHYS
Thermal Shutdown Hysteresis
-
150
170
20
°C
6.8 Switching Characteristics (VBIAS = 5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 5V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
1170
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
819
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
347
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2090
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
108
us
VIN = 3.3V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
944
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
567
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
377
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2110
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
113
us
VIN = 1.8V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
692
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
327
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
365
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2150
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
117
us
VIN = 1.2V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
591
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
227
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
364
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2180
us
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6.8 Switching Characteristics (VBIAS = 5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
tOFF
Turn OFF time
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RL = 100Ω, CL = 10uF, CT = 1000pF
120
us
VIN = 0.8V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
523
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
159
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
365
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2260
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
129
us
6.9 Switching Characteristics (VBIAS = 3.3 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 3.3V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
898
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
563
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
336
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2100
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
108
us
VIN = 1.8V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
708
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
331
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
377
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2145
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
113
us
VIN = 1.2V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
605
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
231
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
375
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2190
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
119
us
VIN = 0.8V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
536
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
162
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
373
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2260
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
126
us
6.10 Switching Characteristics (VBIAS = 1.5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 1.5V
8
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
620
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
281
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
340
us
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6.10 Switching Characteristics (VBIAS = 1.5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2150
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
111
us
VIN = 1.2V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
642
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
237
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
404
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2170
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
114
us
VIN = 0.8V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
535
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
166
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
368
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
2245
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
171
us
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6.11 Typical Characteristics
59
–40 C
25 C
85 C
125 C
58
QOD Resistance ()
57
56
55
54
53
52
51
50
49
1.5
2
VIN = VBIAS
5
1
–40 C
25 C
85 C
125 C
5.5
10.8
–40 C
25 C
125 C
0.9
0.8
Shutdown Current (uA)
11.2
Quiescent Current (uA)
4.5
Figure 6-2. QOD-Resistance vs Bias Voltage
12
11.6
10.4
10
9.6
9.2
8.8
0.7
0.6
0.5
0.4
0.3
0.2
8.4
0.1
8
1.5
2
2.5
3
3.5
4
Bias Voltage (V)
VIN = VBIAS
4.5
5
0
1.5
5.5
VOUT = OPEN
145
135
Rise Time (us)
130
125
120
115
110
105
100
1
1.5
VBIAS = 5 V
2
2.5
3
3.5
Input Voltage (V)
2.5
3
3.5
4
Bias Voltage (V)
4
CL = 10 µF
CT = 1000 pF
4.5
5
RL = 100 Ω
Figure 6-5. Delay Time vs Input Voltage
4.5
5
5.5
VOUT = GND
Figure 6-4. Shutdown Current vs Bias Voltage
–40 C
25 C
85 C
125 C
140
95
0.5
2
VIN = VBIAS
Figure 6-3. Quiescent Current vs Bias Voltage
Delay Time (us)
3
3.5
4
Bias Voltage (V)
VIN = VBIAS
Figure 6-1. On-Resistance vs Bias Voltage
10
2.5
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
0.5
–40 C
25 C
85 C
125 C
1
1.5
VBIAS = 5 V
2
2.5
3
3.5
Input Voltage (V)
4
CL = 10 µF
CT = 1000 pF
4.5
5
RL = 100 Ω
Figure 6-6. Rise Time vs Input Voltage
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6.11 Typical Characteristics (continued)
1100
1000
127.5
900
800
700
600
125
122.5
120
117.5
115
112.5
500
110
400
0.5
1
1.5
2
VBIAS = 5 V
2.5
3
3.5
Input Voltage (V)
4
CL = 10 µF
CT = 1000 pF
4.5
107.5
0.5
5
RL = 100 Ω
2600
2440
2
2.5
3
3.5
Input Voltage(V)
4
CL = 10 µF
CT = 1000 pF
4.5
5
RL = 100 Ω
3300
VIN = 5 V
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
3000
2700
2400
Rise Time (us)
2360
2280
2200
2120
2100
1800
1500
1200
2040
900
1960
600
1880
300
1800
0.5
1.5
Figure 6-8. Turn-off Time vs Input Voltage
-40 C
25 C
125 C
2520
1
VBIAS = 5 V
Figure 6-7. Turn-on Time vs Input Voltage
Fall Time (us)
–40 C
25 C
125 C
130
Turn-off Time (us)
Turn-on Time (us)
132.5
–40 C
25 C
85 C
125 C
1200
0
1
1.5
VBIAS = 5 V
QOD = 2 kΩ
2
2.5
3
3.5
Input Voltage (V)
4
CL = 10 µF
CT = 1000 pF
4.5
5
RL = 100 Ω
Figure 6-9. Fall Time vs Input Voltage
0
500 1000 1500 2000 2500 3000 3500 4000 4500 5000
CT Capacitor (pF)
VBIAS = 5 V
CL = 10 µF
CT = 1000 pF
RL = 100 Ω
Figure 6-10. Rise Time vs CT Capacitor
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7 Parameter Measurement Information
Figure 7-1. TPS22997 Timing Diagram
12
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8 Detailed Description
8.1 Overview
The TPS22997 device is a single-channel load switch with a 4-mΩ power MOSFET designed to operate up to
10 A. The voltage range is 0.1 V to 5.5 V. A configurable rise time provides flexibility for power sequencing and
minimizes inrush current for high capacitance loads.
The switch is controlled by an enable pin (ON), which is capable of interfacing directly with low voltage GPIO
signals down to its VIH level of 0.8 V. The TPS22997 device has an optional QOD pin for quick output discharge
when switch is turned off, and the fall time (tFALL) of the output can be adjusted through an external capacitor.
There is a Power Good (PG) signal on the device that indicates when the main MOSFET is fully turned on and
the on-resistance is at its final value.
8.2 Functional Block Diagram
8.3 Feature Description
8.3.1 ON and OFF Control
The ON pin controls the state of the switch. The ON pin is compatible with standard GPIO logic threshold so it
can be used in a wide variety of applications. When the pin pull high, the device enables, and when it is low, the
device disables.
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8.3.2 Adjustable Slew Rate
A capacitor to GND on the CT pin sets the slew rate, and the higher the capacitance the lower the slew rate. The
voltage on the CT pin can be as high as 15 V; therefore, the minimum voltage rating for the CT capacitor must
be 30 V for optimal performance. Rise times for VBIAS = 5 V are shown below.
CT Capacitor
VIN = 5 V
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
0 pF
165 µs
126 µs
86 µs
66 µs
51 µs
220 pF
309 µs
221 µs
137 µs
99 µs
74 µs
1000 pF
819 µs
554 µs
319 µs
222 µs
160 µs
4700 pF
3260 µs
2170 µs
1210 µs
829 µs
575 µs
The following equation can be used to estimate the rise time for different VIN and CT capacitors at VBIAS = 5 V.
tR = (0.1302 VIN + 0.0063) × CT + 27.797 VIN + 30.54
(1)
Where:
•
•
•
tR = Rise time in µs
VIN = Input voltage in V
CT = CT capacitance in pF
8.3.3 Adjustable Quick Output Discharge
The TPS22997 device includes a QOD feature that can be configured in one of three ways:
1. QOD pin shorted to VOUT pin. Using this method, the discharge rate after the switch becomes disabled
is controlled with the value of the internal resistance RQOD. The value of this resistance is listed in the
Electrical Characteristics table.
2. QOD pin connected to VOUT pin using an external resistor REXT. After the switch becomes disabled, the
discharge rate is controlled by the value of the total resistance of the QOD.
3. QOD pin is unused and left floating. Using this method, there is no quick output discharge functionality, and
the output remains floating after the switch is disabled.
Fall time is dependent on the strength of the configured pulldown resistance on the output.
8.3.4 Thermal Shutdown
When the device temperature reaches 150°C (typical), the device shuts itself off to prevent thermal damage.
After it cools off by about 20°C, the device turns back on. If the device is kept in a thermally stressful
environment, then the device oscillates between these two states until it can keep its temperature below the
thermal shutdown point.
8.3.5 Power Good (PG) Signal
The TPS22997 device has a Power Good (PG) output signal to indicate the gate of the pass FET is driven high
and the switch is on with the on-resistance close to its final value (full load ready). The signal is an active high
and open drain output which can be connected to a voltage source through an external pullup resistor, RPU. This
voltage source can be VOUT from the TPS22997 device or another external voltage. VBIAS is required for PG to
have a valid output.
8.4 Device Functional Modes
The below table summarizes the device functional modes:
14
ON
Fault Condition
VOUT State
L
N/A
Hi-Z
H
None
VIN (through RON)
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ON
Fault Condition
VOUT State
X
Thermal shutdown
Hi-Z
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
9.2 Typical Application
This typical application demonstrates how to use the TPS22997 device to limit startup inrush current.
TPS22997
VIN
Power Supply
VOUT
Load
RDCHG
VBIAS
VBIAS
RPG
QOD
CBIAS
PG
ON
CT
EN
OFF
RT
CT
GND
Figure 9-1. TPS22997 Basic Application
Table 9-1. Component Descriptions
PARAMETER
Purpose
CBIAS
Stabilize the bias supply and filter out low frequency noise.
CT
Adjustable rise time capacitor.
RT
Optional CT capacitor discharge resistor for cases when device is
disabled before output has fully ramped up. Use a resistor >10MΩ.
RDCHG
Adjustable output discharge resistor.
9.2.1 Design Requirements
For this example, the values below are used as the design parameters.
Table 9-2. Design Parameters
16
PARAMETER
VALUE
VBIAS
5.0 V
VIN
5.0 V
Load capacitance
220 μF
Maximum inrush current
1.5 A
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9.2.2 Detailed Design Procedure
When the switch enables, the charge up the output capacitance from 0 V to the set value (1.8 V in this example).
This charge arrives in the form of inrush current. Calculate inrush current using Equation 2.
Inrush Current = CL × dVOUT/dt
(2)
Where:
•
•
•
CL is the output capacitance.
dVOUT is the change in VOUT during the ramp up of the output voltage when device is enabled. Because
rise time is 10% of VOUT to 90% of VOUT, this is 80% of the VIN value.
dt is the rise time in VOUT during the ramp up of the output voltage when the device is enabled.
The TPS22997 offers an adjustable rise time for VOUT, allowing the user to control the inrush current during turn
on. Calculate the appropriate rise time using the design requirements and the inrush current equation as shown
below.
1.5 A = 220 µF × (5.0 V × 80%) / dt
(3)
dt = 586 us
(4)
To ensure an inrush current of less than 1.5 A, a CT setting that yields a rise time of more than 586 µs must be
chosen. By using a 1000pF capacitance, a rise time of 819 μs is selected, limiting the inrush current to below 1.5
A.
9.2.3 Application Performance Plots
Figure 9-2. Inrush Current for CL = 220 µF with CT = 1000 pF
Figure 9-3. PG Pin Behavior with Inrush Current for CL = 220 µF
with CT = 1000 pF
9.3 Power Supply Recommendations
The TPS22997 device is designed to operate with a VIN range of 0.1 V to 5.5 V. Regulate the VIN power supply
well. The power supply must be able to withstand all transient load current steps. In most situations, using an
input capacitance (CIN) of 1 μF is sufficient to prevent the supply voltage from dipping when the switch is turned
on. In cases where the power supply is slow to respond to a large transient current or large load current step,
additional bulk capacitance can be required on the input.
A capacitor (CBIAS) is recommended to be placed as close to the device as possible to stabilize the supply and
filter our low frequency noise.
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9.4 Layout
9.4.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, place the input and output
capacitors close to the device to minimize the effects that parasitic trace inductances can have on normal
operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
9.4.2 Layout Example
VBIAS
From GPIO
Via to GND
CT
VBIAS
ON
CT
VIN
VOUT
VIN
VOUT
PG
GND
QOD
RQOD
To GPIO
Via to GND
Figure 9-4. TPS22997 Layout Example
18
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10 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
10.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
10.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
10.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
10.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
10.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
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11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
20
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PACKAGE OPTION ADDENDUM
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12-Dec-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS22997RYZR
ACTIVE
WQFN-HR
RYZ
10
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
(102, 1O2)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
