TPS22998
ZHCSMV6A – OCTOBER 2021 – REVISED DECEMBER 2021
TPS22998 5.5V、10A、导通电阻为 4mΩ 的负载开关
1 特性
•
•
•
•
•
•
•
•
3 说明
输入电压范围 (VIN)：0.2 V 至 5.5V
偏置电压范围：2.2 V 至 5.5V
最大持续电流：10A
导通电阻 (RON)：4mΩ（典型值）
带三态引脚的可调压摆率
快速输出放电 (QOD)：50Ω
热关断
低功耗：
– 导通状态 (IQ)：15μA（典型值）
– 关闭状态 (ISD)：3μA（典型值）
2 应用
•
•
•
•
固态硬盘
PC 和笔记本电脑
工业 PC
光学模块
TPS22998 是一款单通道负载开关，具有可配置上升时
间，从而可更大限度地降低浪涌电流。此器件包含一个
可在 0.2V 至 5.5V 输入电压范围内运行的 N 沟道
MOSFET，并且支持 10A 的最大连续电流。
开关可由一个打开和关闭输入 (ON) 控制，此输入可与
低压控制信号 (VIH = 0.9V) 直接连接。TPS22998 在开
关关闭时具有固定快速输出放电，将输出下拉至接地。
TPS22998 采用 10 引脚 WQFN 封装 (RYZ)（1.5mm
× 2mm，间距为 0.5mm）并可在自然通风条件下的 –
40°C 至+105°C 温度范围运行。
器件信息
器件型号
TPS22998
(1)
封装(1)
WQFN (10)
封装尺寸（标称值）
1.5mm × 2.0mm
要了解所有可用封装，请参见产品说明书末尾的可订购产品附
录。
TPS22998 典型应用
TPS22998 方框图
本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问
www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLVSG05
TPS22998
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ZHCSMV6A – OCTOBER 2021 – REVISED DECEMBER 2021
Table of Contents
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics (VBIAS = 5 V)..................... 5
6.6 Electrical Characteristics (VBIAS = 3.3 V).................. 5
6.7 Electrical Characteristics (VBIAS = 2.2 V).................. 6
6.8 Switching Characteristics (VBIAS = 2.2 V to 5 V)....... 7
6.9 Timing Diagram...........................................................8
6.10 Typical Characteristics.............................................. 9
7 Detailed Description...................................................... 11
7.1 Overview................................................................... 11
7.2 Functional Block Diagram......................................... 11
7.3 Feature Description...................................................11
7.4 Device Functional Modes..........................................12
8 Application and Implementation.................................. 13
8.1 Application Information............................................. 13
8.2 Typical Application.................................................... 13
9 Power Supply Recommendations................................15
10 Layout...........................................................................15
10.1 Layout Guidelines................................................... 15
10.2 Layout Example...................................................... 15
11 Device and Documentation Support..........................16
11.1 接收文档更新通知................................................... 16
11.2 支持资源..................................................................16
11.3 Trademarks............................................................. 16
11.4 Electrostatic Discharge Caution.............................. 16
11.5 术语表..................................................................... 16
12 Mechanical, Packaging, and Orderable
Information.................................................................... 17
4 Revision History
注：以前版本的页码可能与当前版本的页码不同
Changes from Revision * (October 2021) to Revision A (December 2021)
Page
• 将数据表状态从“预告信息”更改为“量产数据”.............................................................................................1
2
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5 Pin Configuration and Functions
图 5-1. TPS22998 RYZ Package, 10-Pin WQFN (Top View)
表 5-1. Pin Functions
PIN
(1)
I/O(1)
DESCRIPTION
NAME
NO.
VBIAS
1
I
Device bias supply
VIN
2, 3, 4
I
Switch input
GND
5
G
Device ground
VOUT
6, 7, 8
O
Switch output
CT
9
I
Slew rate control – can be pulled up, left floating, or tie to ground
ON
10
I
Enable pin
I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VIN
Input Voltage
–0.3
6
V
VBIAS
Bias Voltage
–0.3
6
V
VON, VCT
Control Pin Voltage
–0.3
6
V
IMAX
Maximum Current
TJ
Junction temperature
Tstg
Storage temperature
(1)
10
A
Internally
Limited
°C
150
°C
–65
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001(1)
±2000
Charged device model (CDM), per ANSI/ESDA/
JEDEC JS-002(2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input Voltage
0.2
5.5
V
VBIAS
Bias Voltage
2.2
5.5
V
VCT
Control Pin Voltage
0
5.5
V
TA
Ambient Temperature
–40
105
°C
6.4 Thermal Information
TPS22998
THERMAL METRIC
(1)
RYZ (WQFN)
UNIT
10 PINS
RθJA
Junction-to-ambient thermal resistance
84.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
77.5
°C/W
RθJB
Junction-to-board thermal resistance
16.6
°C/W
ΨJT
Junction-to-top characterization parameter
4.0
°C/W
YJB
Junction-to-board characterization parameter
16.0
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics (VBIAS = 5 V)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
Power Consumption
25°C
ISD,VBIA
S
VBIAS Shutdown Current
ON = 0 V
3
5
uA
–40°C to 105°C
6
uA
25°C
IQ,VBIAS VBIAS Quiescent Current
ON > VIH
15
VIN Shutdown Current
ON = 0 V
ION
ON pin leakage
ON = VBIAS
uA
–40°C to 85°C
20
uA
–40°C to 105°C
20
uA
25°C
ISD,VIN
uA
–40°C to 85°C
0.1
–40°C to 85°C
–40°C to 105°C
uA
1
uA
2
uA
0.1
–40°C to 105°C
uA
Performance
25°C
RON
On-Resistance
VIN = 0.2 V to 5 V
4
mΩ
–40°C to 85°C
6
mΩ
–40°C to 105°C
7
mΩ
VIH
Turn on threshold, rising
–40°C to 105°C
0.765
0.9
1.035
V
VIL
Turn off threshold, falling
–40°C to 105°C
0.595
0.7
0.805
V
VON,
ON pin hysteresis
–40°C to 105°C
On pin deglitch time
–40°C to 105°C
HYST
tON,DEG
LITCH
RQOD
QOD Resistance
VOUT = VIN
0.2
2
25°C
5
V
7
50
–40°C to 105°C
40
us
Ω
60
Ω
180
°C
Protection
TSD
Thermal Shutdown
-
TSDHYS Thermal Shutdown Hysteresis
130
-
150
20
°C
6.6 Electrical Characteristics (VBIAS = 3.3 V)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
Power Consumption
25°C
ISD,VBIA
S
VBIAS Shutdown Current
ON = 0 V
ON > VIH
5
uA
–40°C to 105°C
5
uA
ION
VIN Shutdown Current
ON pin leakage
ON = 0 V
ON = VBIAS
15
uA
–40°C to 85°C
20
uA
–40°C to 105°C
20
uA
25°C
ISD,VIN
uA
–40°C to 85°C
25°C
IQ,VBIAS VBIAS Quiescent Current
3
0.1
uA
–40°C to 85°C
1
uA
–40°C to 105°C
3
uA
1
uA
–40°C to 105°C
0.1
Performance
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6.6 Electrical Characteristics (VBIAS = 3.3 V) (continued)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
25°C
RON
On-Resistance
VIH
ON pin turn on threshold, rising
VIL
VON,
VIN = 0.2 V to 3.3 V
TYP
–40°C to 85°C
–40°C to 105°C
HYST
tON,DEG
LITCH
RQOD
MAX
4
UNIT
mΩ
7
mΩ
7
mΩ
–40°C to 105°C
0.765
0.9
1.035
V
ON pin turn off threshold, falling
–40°C to 105°C
0.595
0.7
0.805
V
ON pin hysteresis
–40°C to 105°C
On pin deglitch time
–40°C to 105°C
QOD Resistance
VOUT = VIN
0.2
2
25°C
5
V
6.5
50
–40°C to 105°C
40
us
Ω
60
Ω
180
°C
Protection
TSD
Thermal Shutdown
-
TSDHYS Thermal Shutdown Hysteresis
130
-
150
20
°C
6.7 Electrical Characteristics (VBIAS = 2.2 V)
Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
Power Consumption
25°C
ISD,VBIA
S
VBIAS Shutdown Current
ON = 0 V
3
–40°C to 85°C
5
uA
–40°C to 105°C
5
uA
25°C
IQ,VBIAS VBIAS Quiescent Current
ON > VIH
15
ION
VIN Shutdown Current
ON pin leakage
ON = 0 V
ON = VBIAS
uA
–40°C to 85°C
20
uA
–40°C to 105°C
20
uA
25°C
ISD,VIN
uA
0.1
uA
–40°C to 85°C
1
uA
–40°C to 105°C
3
uA
1
uA
–40°C to 105°C
0.1
25°C
4.3
Performance
RON
On-Resistance
VIN = 0.2 V to 2.2 V
mΩ
–40°C to 85°C
7
mΩ
–40°C to 105°C
7
mΩ
VIH
ON pin turn on threshold, rising
–40°C to 105°C
0.765
0.9
1.035
V
VIL
ON pin turn off threshold, falling
–40°C to 105°C
0.595
0.7
0.805
V
VON,
ON pin hysteresis
–40°C to 105°C
On pin deglitch time
–40°C to 105°C
HYST
tON,DEG
LITCH
RQOD
QOD Resistance
VOUT = VIN
0.2
2
25°C
4.5
V
6.5
50
–40°C to 105°C
40
us
Ω
60
Ω
180
°C
Protection
TSD
6
Thermal Shutdown
-
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150
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Over operating free-air temperature range (unless otherwise noted). Typical values are at TA = 25°C.
PARAMETER
TEST CONDITIONS
TSDHYS Thermal Shutdown Hysteresis
TA
MIN
TYP
-
MAX
20
UNIT
°C
6.8 Switching Characteristics (VBIAS = 2.2 V to 5 V)
Over operating free-air temperature range (unless otherwise noted), CIN=47uF. Typical values are at TA = 25°C, CL = 0.1μF,
and a current load of 1mA.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 5 V
tON
Turn ON time
CT = Open
250
us
tON
Turn ON time
CT = VBIAS
1870
us
tON
Turn ON time
CT = GND
3728
us
tRISE
Rise time
CT = Open
225
us
tRISE
Rise time
CT = VBIAS
1838
us
tRISE
Rise time
CT = GND
3697
us
tD
Delay time
CT = Open
26
us
tD
Delay time
CT = VBIAS
31
us
tD
Delay time
CT = GND
31
us
tFALL
Fall time
CT = Open
11
us
tOFF
Turn OFF time
CT = Open
3
us
VIN = 3.3 V
tON
Turn ON time
CT = Open
175
us
tON
Turn ON time
CT = VBIAS
1261
us
tON
Turn ON time
CT = GND
3586
us
tRISE
Rise time
CT = Open
150
us
tRISE
Rise time
CT = VBIAS
1232
us
tRISE
Rise time
CT = GND
2478
us
tD
Delay time
CT = Open
26
us
tD
Delay time
CT = VBIAS
29
us
tD
Delay time
CT = GND
29
us
tFALL
Fall time
CT = Open
11
us
tOFF
Turn OFF time
CT = Open
3
us
VIN = 1.8 V
tON
Turn ON time
CT = Open
102
us
tON
Turn ON time
CT = VBIAS
664
us
tON
Turn ON time
CT = GND
1302
us
tRISE
Rise time
CT = Open
75
us
tRISE
Rise time
CT = VBIAS
634
us
tRISE
Rise time
CT = GND
1272
us
tD
Delay time
CT = Open
27
us
tD
Delay time
CT = VBIAS
29
us
tD
Delay time
CT = GND
30
us
tFALL
Fall time
CT = Open
11
us
tOFF
Turn OFF time
CT = Open
3
us
VIN = 0.6 V
tON
Turn ON time
CT = Open
51
us
tON
Turn ON time
CT = VBIAS
213
us
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6.8 Switching Characteristics (VBIAS = 2.2 V to 5 V) (continued)
Over operating free-air temperature range (unless otherwise noted), CIN=47uF. Typical values are at TA = 25°C, CL = 0.1μF,
and a current load of 1mA.
PARAMETER
TEST CONDITIONS
tON
Turn ON time
CT = GND
tRISE
Rise time
tRISE
Rise time
tRISE
tD
MIN
TYP
MAX
UNIT
393
us
CT = Open
23
us
CT = VBIAS
183
us
Rise time
CT = GND
365
us
Delay time
CT = Open
27
us
tD
Delay time
CT = VBIAS
29
us
tD
Delay time
CT = GND
29
us
tFALL
Fall time
CT = Open
10
us
tOFF
Turn OFF time
CT = Open
4
us
37
us
VIN = 0.285 V
tON
Turn ON time
CT = Open
tON
Turn ON time
CT = VBIAS
96
us
tON
Turn ON time
CT = GND
158
us
tRISE
Rise time
CT = Open
11
us
tRISE
Rise time
CT = VBIAS
66
us
tRISE
Rise time
CT = GND
128
us
tD
Delay time
CT = Open
27
us
tD
Delay time
CT = VBIAS
29
us
tD
Delay time
CT = GND
30
us
tFALL
Fall time
CT = Open
9
us
tOFF
Turn OFF time
CT = Open
4
us
6.9 Timing Diagram
图 6-1. TPS22998 Timing Diagram
8
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6.10 Typical Characteristics
20
20
–40C
25C
85C
105C
Quiescent Current(uA)
18
–40C
25C
85C
105C
19
18
Quiescent Current (uA)
19
17
16
15
14
13
17
16
15
14
13
12
12
11
11
10
10
0
0.5
1
1.5
VBIAS = 5 V
2
2.5
3
Input Voltage (V)
3.5
4
4.5
2
5
4
3.6
4
3.2
Shutdown Current (uA)
Shutdown Current (uA)
5
3.5
3
2.5
2
1.5
–40C
25C
85C
105C
1
0.5
1.5
VBIAS = 5 V
2
2.5
3
Input Voltage (V)
3.5
4
4.5
2
1.2
0
5
2
58
4.8
56
QOD Resistance ()
On-Resistance (m)
60
4.2
3.6
3
2.4
1.8
–40C
25C
85C
105C
VBIAS = 5 V
2
2.5
3
Input Voltage (V)
3
3.5
4
4.5
3.5
4
Bias Voltage (V)
4.5
5
5.5
VOUT = 0 V
–40C
25C
85C
105C
54
52
50
48
46
44
42
40
0
1.5
2.5
图 6-5. VBIAS Shutdown Current vs Bias Voltage
6
1
–40C
25C
85C
105C
0.4
5.4
0.5
VOUT = Open
1.6
图 6-4. VBIAS Shutdown Current vs Input Voltage
0
5.5
2.4
VIN = VBIAS
0.6
5
2.8
VOUT = 0 V
1.2
4.5
0.8
0
1
3.5
4
Bias Voltage (V)
图 6-3. Quiescent Current vs Bias Voltage
4.5
0.5
3
VIN = VBIAS
VOUT = Open
图 6-2. Quiescent Current vs Input Voltage
0
2.5
5
2
2.5
3
3.5
4
Bias Voltage (V)
4.5
5
5.5
VIN = VBIAS
ILOAD = 200 mA
图 6-6. On-Resistance vs Input Voltage
图 6-7. QOD Resistance vs Bias Voltage
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250
30
225
29
200
28
175
27
Delay Time (us)
Rise Time (us)
6.10 Typical Characteristics (continued)
150
125
100
75
–40C
25C
85C
105C
50
25
0.5
1
1.5
2
2.5
3
Input Voltage (V)
VBIAS = 5 V
3.5
4
CL = 0.1 µF
4.5
25
24
23
–40C
25C
85C
105C
22
21
0
0
26
20
5
0
CT = Floating
0.5
250
200
Fall Time (us)
Turn On Time (us)
225
175
150
125
100
–40C
25C
85C
105C
75
50
25
1
1.5
2
2.5
3
Input Volage (V)
VBIAS = 5 V
3.5
4
CL = 0.1 µF
2
2.5
3
Input Voltage (V)
3.5
CL = 0.1 µF
4
4.5
5
CT = Floating
图 6-9. Delay Time vs Input Voltage
275
0.5
1.5
VBIAS = 5 V
图 6-8. Rise Time vs Input Voltage
0
1
4.5
5
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
–40C
25C
85C
105C
0
CT = Floating
0.5
1
1.5
2
2.5
3
Input Voltage (V)
VBIAS = 5 V
图 6-10. Turn-On Time vs Input Voltage
3.5
CL = 0.1 µF
4
4.5
5
CT = Floating
图 6-11. Fall Time vs Input Voltage
6
–40C
25C
85C
105C
5.4
4.8
Off Time (us)
4.2
3.6
3
2.4
1.8
1.2
0.6
0
0
0.5
VBIAS = 5 V
1
1.5
2
2.5
3
Input Voltage (V)
3.5
4
CL = 0.1 µF
4.5
5
CT = Floating
图 6-12. Off Time vs Input Voltage
10
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7 Detailed Description
7.1 Overview
The TPS22998 device is a single-channel load switch with a 4-mΩ power MOSFET designed to operate up to 10
A. The voltage range is 0.2 V to 5.5 V. A configurable rise time provides flexibility for power sequencing and
minimizes inrush current for high capacitance loads.
An enable pin (ON) controls the switch, which is capable of interfacing directly with low voltage GPIO signals.
The TPS22998 device uses quick output discharge when switch turns off, pulling the output down to 0 V through
an internal 50-Ω resistor.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 ON and OFF Control
The ON pin controls the state of the switch. The ON pin is compatible with standard GPIO logic threshold so it
can be used in a wide variety of applications. When the pin pull high, the device enables, and when it is low, the
device disables.
7.3.2 Adjustable Slew Rate
The CT pin is a tri-state pin, meaning that it has three different slew rates depending on the connection to the
pin. The CT pin can be grounded, pulled high, or left floating. Floating defines as an effective resistance to GND
or other pins greater than 10 MΩ.
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7.3.3 Thermal Shutdown
When the device temperature reaches 150°C (typical), the device shuts itself off to prevent thermal damage.
After it cools off by about 20°C, the device turns back on. If the device is kept in a thermally stressful
environment, then the device oscillates between these two states until it can keep its temperature below the
thermal shutdown point.
7.4 Device Functional Modes
The below table summarizes the device functional modes:
ON
12
Fault Condition
VOUT State
L
None
QOD to GND
H
None
Connected to VIN
H
Thermal shutdown
QOD to GND
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8 Application and Implementation
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
8.2 Typical Application
This typical application demonstrates how to use the TPS22998 device to limit startup inrush current.
图 8-1. TPS22998 Basic Application
8.2.1 Design Requirements
For this example, the values below are used as the design parameters.
表 8-1. Design Parameters
PARAMETER
VALUE
VBIAS
3.3 V
VIN
1.8 V
Load capacitance
470 μF
Maximum inrush current
1A
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8.2.2 Detailed Design Procedure
When the switch enables, the charge up the output capacitance from 0 V to the set value (1.8 V in this example).
This charge arrives in the form of inrush current. Calculate inrush current using 方程式 1.
Inrush Current = CL × dVOUT/dt
(1)
Where:
• CL is the output capacitance.
• dVOUT is the change in VOUT during the ramp up of the output voltage when device is enabled. Because
rise time is 10% of VOUT to 90% of VOUT, this is 80% of the VIN value.
• dt is the rise time in VOUT during the ramp up of the output voltage when the device is enabled.
The TPS22998 offers an adjustable rise time for VOUT, allowing the user to control the inrush current during turn
on. Calculate the appropriate rise time using the design requirements and the inrush current equation as shown
below.
1A = 470 µF × (1.8 V × 80%) / dt
(2)
dt = 677µs
(3)
To ensure an inrush current of less than 1 A, a CT setting that yields a rise time of more than 677 µs must be
chosen. By pulling the CT pin high, a rise time of 900 μs is selected, limiting the inrush current to below 1 A.
8.2.3 Application Performance Plots
The below scope shot shows the TPS22998 turning on into a 470-μF load with the CT pin tied to VBIAS.
图 8-2. TPS22998 Turn-On into 470 μF (CT = VBIAS)
14
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9 Power Supply Recommendations
The TPS22998 device is designed to operate with a VIN range of 0.2 V to 5.5 V. Regulate the VIN power supply
well and place as close to the device terminal as possible. The power supply must be able to withstand all
transient load current steps. In most situations, using an input capacitance (CIN) of 1 μF is sufficient to prevent
the supply voltage from dipping when the switch is turned on. In cases where the power supply is slow to
respond to a large transient current or large load current step, additional bulk capacitance can be required on the
input.
10 Layout
10.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, place the input and output
capacitors close to the device to minimize the effects that parasitic trace inductances can have on normal
operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
10.2 Layout Example
图 10-1. TPS22998 Layout Example
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11 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
11.1 接收文档更新通知
要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册，即可每周接收产品信息更
改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
11.2 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅
TI 的《使用条款》。
11.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
11.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.5 术语表
TI 术语表
16
本术语表列出并解释了术语、首字母缩略词和定义。
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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1-Sep-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS22998RYZR
ACTIVE
WQFN-HR
RYZ
10
3000
RoHS & Green
SN
Level-2-260C-1 YEAR
-40 to 105
1LF
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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