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TPS23753A
SLVS933C – JULY 2009 – REVISED APRIL 2016
TPS23753A IEEE 802.3 PoE Interface and Converter Controller With Enhanced ESD
Immunity
1 Features
•
•
•
•
•
•
•
•
•
•
•
•
1
The TPS23753A supports a number of input-voltage
ORing options including highest voltage, external
adapter preference, and PoE preference.
Enhanced ESD Ride-Through Capability
Optimized for Isolated Converters
Complete PoE Interface
Adapter ORing Support
12-V Adapter Support
Programmable Frequency With Synchronization
Robust 100-V, 0.7-Ω Hotswap MOSFET
Small 14-Pin TSSOP Package
15-kV and 8-kV System Level ESD Capable
–40°C to 125°C Junction Temperature Range
Design Procedure Application Note – SLVA305
Adapter ORing Application Note – SLVA306
The PoE interface features an external detection
signature pin that can also be used to disable the
internal hotswap MOSFET. This allows the PoE
function to be turned off. Classification can be
programmed to any of the defined types with a single
resistor.
The DC-DC controller features a bootstrap start-up
mechanism with an internal, switched current source.
This provides the advantages of cycling overload fault
protection without the constant power loss of a pullup
resistor.
The programmable oscillator may be synchronized to
a higher-frequency external timing reference. The
TPS23753A features improvements for uninterrupted
device operation through an ESD event.
2 Applications
•
•
•
•
IEEE 802.3at Compliant Powered Devices
VoIP Telephones
Access Points
Security Cameras
Device Information(1)
PART NUMBER
PACKAGE
TPS23753A
BODY SIZE (NOM)
TSSOP (14)
5.00 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
The TPS23753A is a combined Power over Ethernet
(PoE) powered device (PD) interface and currentmode DC-DC controller optimized specifically for
isolated converter designs. The PoE implementation
supports the IEEE 802.3at standard as a 13-W, type
1 PD. The requirements for an IEEE 802.3at type 1
device are a superset of IEEE 802.3-2008 (originally
IEEE 802.3af).
BR1
T1
VDD
M1
*
VB
GATE
CS
CTL
VB
R CTL
RCS
Adapter
RFRS
R APD1
RAPD2
DA
V OUT
R VC
CVB
APD
FRS
*
C OUT
D VC
CVC
V SS
TPS23753
RCLS
BR2
DS
VC
RBLNK
CLS
RTN
BLNK
DEN
VDD1
C IN
D1
58V RDEN
C1
0.1mF
From Spare
Pairs or
Transformers
From Ethernet
Transformers
Basic TPS23753A Implementation
R OB
C CTL
C IZ
C IO TLV431
R FBU
R FBL
* Adapter interface and R BLNK are Optional
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS23753A
SLVS933C – JULY 2009 – REVISED APRIL 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Product Information...............................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
4
4
4
5
5
6
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics: Controller Section Only....
Electrical Characteristics: PoE and Control ..............
Typical Characteristics ..............................................
Detailed Description ............................................ 11
8.1 Overview ................................................................. 11
8.2 Functional Block Diagram ....................................... 11
8.3 Feature Description................................................. 12
8.4 Device Functional Modes........................................ 14
9
Application and Implementation ........................ 25
9.1 Application Information............................................ 25
9.2 Typical Application .................................................. 25
10 Power Supply Recommendations ..................... 27
11 Layout................................................................... 27
11.1 Layout Guidelines ................................................. 27
11.2 Layout Example .................................................... 27
12 Device and Documentation Support ................. 28
12.1
12.2
12.3
12.4
12.5
Documentation Support ........................................
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
28
28
28
28
28
13 Mechanical, Packaging, and Orderable
Information ........................................................... 28
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (January 2010) to Revision C
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ............................... 1
•
Deleted Dissipation Ratings .................................................................................................................................................. 7
Changes from Revision A (September 2009) to Revision B
Page
•
Changed From: IEEE 802.3-2005 To: IEEE 802.3at throughout the data sheet ................................................................... 1
•
Changed the text in paragraph one of the DESCRIPTION .................................................................................................... 1
•
Changed the Thermal resistance note in the DISSIPATION RATINGS table to include additional information.................... 7
•
Changed text in the second paragraph of Classic PoE Overdrive From: The PD may return the default 12.95 W
(often referred to as 13 W) current-encoded class, or one of four other choices. To: The PD may return the default
13-W current-encoded class, or one of four other choices .................................................................................................. 14
•
Changed Table 1 - Notes for the Class 4 row ...................................................................................................................... 16
Changes from Revision Original (July 2009) to Revision A
•
2
Page
Changed the ESDS statement. .............................................................................................................................................. 1
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SLVS933C – JULY 2009 – REVISED APRIL 2016
5 Product Information
DEVICE
DUTY CYCLE
POE UVLO
ON / HYST.
DC-DC UVLO
ON / HYST.
TPS23753A
0 – 78%
35/4.5
9/3.5
6 Pin Configuration and Functions
PW Package
14-Pin TSSOP
Top View
CTL
1
14
FRS
VB
2
13
BLNK
CS
3
12
APD
VC
4
11
CLS
GATE
5
10
DEN
RTN
6
9
VDD
VSS
7
8
VDD1
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
CTL
I
The control loop input to the PWM (pulse width modulator). Use VB as a pullup for CTL.
2
VB
O
5-V bias rail for DC-DC control circuits. Apply a 0.1-μF ceramic capacitor to RTN. VB may be used
to bias an external optocoupler for feedback.
3
CS
I
DC-DC converter switching MOSFET current-sense input. Connect CS to the high side of RCS.
4
VC
I/O
DC-DC converter bias voltage. The internal start-up current source and converter bias winding
output power this pin. Connect a 0.22-μF minimum ceramic capacitor to RTN, and a larger
capacitor to facilitate start-up.
5
GATE
O
Gate drive output for the DC-DC converter switching MOSFET.
6
RTN
—
RTN is the negative rail input to the DC-DC converter and output of the PoE hotswap.
7
VSS
—
Negative power rail derived from the PoE source.
8
VDD1
—
Source of DC-DC converter start-up current. Connect to VDD for most applications.
9
VDD
—
Positive input power rail for PoE interface circuit. Derived from the PoE source.
10
DEN
I/O
Connect a 24.9-kΩ resistor from DEN to VDD to provide the PoE detection signature. Pulling this pin
to VSS during powered operation causes the internal hotswap MOSFET to turn off.
11
CLS
O
Connect a resistor from CLS to VSS to program the classification current.
12
APD
I
Pull APD above 1.5 V to disable the internal PD hotswap switch, forcing power to come from an
external adapter. Connect to the adapter through a resistor divider.
13
BLNK
I/O
Connect to RTN to use the internally set blanking period or connect through a resistor to RTN to
program the blanking period.
14
FRS
I/O
Connect a resistor from FRS to RTN to program the converter switching frequency.
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7 Specifications
7.1 Absolute Maximum Ratings
Voltage are with respect to VSS (unless otherwise noted) (1) per Figure 25 per Table 1
VI
Input voltage
100
VDD1 to RTN
–0.3
100
CLS (3)
–0.3
6.5
[APD, BLNK (3), CTL, FRS (3), VB (3)] to RTN
–0.3
6.5
CS to RTN
–0.3
VB
VC to RTN
–0.3
19
GATE (3) to RTN
–0.3
VC + 0.3
VB
Average sourcing or sinking
current
GATE
Operating junction temperature
Tstg
Storage temperature
(2)
(3)
MAX
–0.3
Sourcing current
TJ
(1)
MIN
VDD, VDD1, DEN, RTN (2)
UNIT
V
Internally limited
mA
25
mARMS
–40 to Internally Limited
–65
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
IRTN = 0 for VRTN > 80 V.
Do not apply voltage to these pins.
7.2 ESD Ratings
VALUE
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
V(ESD)
(1)
(2)
(3)
Electrostatic discharge
UNIT
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
IEC 61000-4-2 contact discharge (3)
±8000
IEC 61000-4-2 air-gap discharge (3)
±15000
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Surges per EN61000-4-2, 1999 applied between RJ-45 and output ground and between adapter input and output ground of the
TPS23753AEVM-001 (HPA304-001) evaluation module (documentation available on the web). These were the test levels, not the failure
threshold.
7.3 Recommended Operating Conditions
Voltage with respect to VSS (unless otherwise noted)
MIN
VI
NOM
0
Input voltage, VC to RTN
0
18
Input voltage, APD, CTL to RTN
0
VB
Input voltage, CS to RTN
0
VB sourcing current
VB capacitance
RBLNK
Synchronization pulse width input (when used)
4
Operating junction temperature
0
2.5
0.1
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350
mA
5
mA
350
kΩ
125
°C
μF
25
–40
V
2
0.08
0
UNIT
57
RTN current (TJ ≤ 125°C)
TJ
MAX
Input voltage, VDD, VDD1, RTN
ns
Copyright © 2009–2016, Texas Instruments Incorporated
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7.4 Thermal Information
TPS23753A
THERMAL METRIC (1)
PW (TSSOP)
UNIT
14 PINS
RθJA
Junction-to-ambient thermal resistance
106.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
32.9
°C/W
RθJB
Junction-to-board thermal resistance
49.1
°C/W
ψJT
Junction-to-top characterization parameter
1.9
°C/W
ψJB
Junction-to-board characterization parameter
48.4
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics: Controller Section Only
Unless otherwise noted: CS = APD = CTL = RTN, GATE open, RFRS = 60.4 kΩ, RBLNK = 249 kΩ, CVB = CVC = 0.1 μF, RDEN =
24.9 kΩ, RCLS open, VVDD-VSS = 48 V, VVDD1-RTN = 48 V, 8.5 V ≤ VVC-RTN ≤ 18 V, –40°C ≤ TJ ≤ 125°C [VSS = RTN and VDD =
VDD1] or [VSS = RTN = VDD], all voltages referred to RTN. Typical specifications are at 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VC
UVLO_1
UVLO_H
Undervoltage lockout
Operating current
Start-up time, CVC = 22 μF
tST
Start-up current source - IVC
VC rising
8.65
9
9.3
Hysteresis (1)
3.3
3.5
3.7
VC = 12 V, CTL = VB
0.4
0.58
0.85
VDD1 = 10.2 V, VVC(0) = 0 V
50
85
175
VDD1 = 35 V, VVC(0) = 0 V
30
48
85
0.44
1.06
1.8
2.5
4.3
6
4.75
5.1
5.25
V
223
248
273
kHz
76%
78.5%
81%
2
2.2
2.4
V
1.7
V
VDD1 = 10.2 V, VVC = 8.6 V
VDD1 = 48 V, VVC = 0 V
V
mA
V
mA
VB
Voltage
6.5 V ≤ VC ≤ 18 V, 0 ≤ IVB ≤ 5 mA
FRS
Switching frequency
CTL= VB, Measure GATE
RFRS = 60.4 kΩ
DMAX
Duty cycle
CTL= VB, Measure GATE
VSYNC
Synchronization
Input threshold
0% duty cycle threshold
VCTL ↓ until GATE stops
1.3
1.5
Soft-start period
Interval from switching start to
VCSMAX
400
800
70
100
145
35
52
75
RBLNK = 49.9 kΩ
41
52
63
CTL
VZDC
Input resistance
μs
kΩ
BLNK
In addition to t1
Blanking delay
BLNK = RTN
ns
CS
VCSMAX
Maximum threshold voltage
VCTL = VB, VCS ↑ until GATE duty
cycle drops
0.5
0.55
0.6
V
t1
Turnoff delay
VCS = 0.65 V
25
41
60
ns
VSLOPE
Internal slope compensation voltage
Peak voltage at maximum duty
cycle, referred to CS
90
118
142
mV
ISL_EX
Peak slope compensation current
VCTL = VB, ICS at maximum duty
cycle (ac component)
30
42
54
μA
Bias current (sourcing)
Gate high, DC component of CS
current
2
3
4.2
μA
(1)
The hysteresis tolerance tracks the rising threshold for a given device.
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Electrical Characteristics: Controller Section Only (continued)
Unless otherwise noted: CS = APD = CTL = RTN, GATE open, RFRS = 60.4 kΩ, RBLNK = 249 kΩ, CVB = CVC = 0.1 μF, RDEN =
24.9 kΩ, RCLS open, VVDD-VSS = 48 V, VVDD1-RTN = 48 V, 8.5 V ≤ VVC-RTN ≤ 18 V, –40°C ≤ TJ ≤ 125°C [VSS = RTN and VDD =
VDD1] or [VSS = RTN = VDD], all voltages referred to RTN. Typical specifications are at 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GATE
Source current
VCTL = VB, VC = 12 V, GATE high,
Pulsed measurement
0.3
0.46
0.6
A
Sink current
VCTL = VB, VC = 12 V, GATE low,
Pulsed measurement
0.5
0.79
1.1
A
VAPD↑
1.42
1.5
1.58
Hysteresis (1)
0.28
0.3
0.32
135
145
155
APD
VAPDEN
VAPDH
Threshold voltage
V
THERMAL SHUTDOWN
Turnoff temperature
Hysteresis (2)
(2)
°C
20
°C
These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's
product warranty.
7.6 Electrical Characteristics: PoE and Control
Unless otherwise noted: CS = APD = CTL = RTN, GATE open, RFRS = 60.4 kΩ, RBLNK = 249 kΩ, CVB = CVC = 0.1 μF, RDEN =
24.9 kΩ, RCLS open, VVDD-VSS = 48 V, VVDD1-RTN = 48 V, 8.5 V ≤ VVC-RTN ≤ 18 V, –40°C ≤ TJ ≤ 125°C [VSS = RTN and VDD =
VDD1] or [VSS = RTN = VDD], all voltages referred to RTN. [VDD = VDD1] or [VDD1 = RTN], VVC-RTN = 0 V, all voltages referred to
VSS. Typical specifications are at 25°C.
PARAMETER
TEST CONDITIONS
MIN TYP
MAX
62 64.3
66.5
UNIT
DEN (DETECTION) (VDD = VDD1 = RTN = VSUPPLY POSITIVE)
Measure ISUPPLY
Detection current
VDD = 1.6 V
VDD = 10 V
μA
406
413
5.2
12
4
5
V
0.1
5
μA
13 V ≤ VDD ≤ 21 V, Measure ISUPPLY
1.8 2.14
2.4
RCLS = 1270 Ω
1.8 2.14
2.4
RCLS = 243 Ω
9.9 10.6
11.3
RCLS = 137 Ω
17.6 18.6
19.4
RCLS = 90.9 Ω
26.5 27.9
29.3
RCLS = 63.4 Ω
38 39.9
42
Classification regulator lower
threshold
Regulator turns on, VDD rising
10 11.7
13
Hysteresis (1)
1.9 2.05
2.2
Classification regulator upper
threshold
Regulator turns off, VDD rising
21
22
23
VCU_HYS
Hysteresis (1)
0.5 0.77
1
Ilkg
Leakage current
VDD = 57 V, VCLS = 0 V, DEN = VSS, Measure ICLS
Detection bias current
VPD_DIS
Hotswap disable threshold
Ilkg
DEN leakage current
399
VDD = 10 V, DEN open, Measure ISUPPLY
3
VDEN = VDD = 57 V, Float VDD1 and RTN, Measure IDEN
μA
CLS (CLASSIFICATION) (VDD = VDD1 = RTN = VSUPPLY POSITIVE)
ICLS
Classification current
VCL_ON
VCL_HYS
VCU_OFF
1
mA
V
V
μA
RTN (PASS DEVICE) (VDD1 = RTN)
0.7
1.2
Ω
Current limit
VRTN = 1.5 V, VDD = 48 V, Pulsed Measurement
405
450
505
mA
Inrush limit
VRTN = 2 V, VDD: 0 V → 48 V, Pulsed Measurement
100
140
180
mA
Foldback voltage threshold
VDD rising
11 12.3
13.6
V
Leakage current
VDD = VRTN = 100 V, DEN = VSS
40
μA
ON-resistance
Ilkg
(1)
6
The hysteresis tolerance tracks the rising threshold for a given device.
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Electrical Characteristics: PoE and Control (continued)
Unless otherwise noted: CS = APD = CTL = RTN, GATE open, RFRS = 60.4 kΩ, RBLNK = 249 kΩ, CVB = CVC = 0.1 μF, RDEN =
24.9 kΩ, RCLS open, VVDD-VSS = 48 V, VVDD1-RTN = 48 V, 8.5 V ≤ VVC-RTN ≤ 18 V, –40°C ≤ TJ ≤ 125°C [VSS = RTN and VDD =
VDD1] or [VSS = RTN = VDD], all voltages referred to RTN. [VDD = VDD1] or [VDD1 = RTN], VVC-RTN = 0 V, all voltages referred to
VSS. Typical specifications are at 25°C.
PARAMETER
TEST CONDITIONS
MIN TYP
MAX
33.9
UNIT
UVLO
UVLO_R
UVLO_H
Undervoltage lockout threshold
VDD rising
Hysteresis
(1)
35
36.1
4.4 4.55
4.7
135
155
V
THERMAL SHUTDOWN
Turnoff temperature
Hysteresis (2)
(2)
145
20
°C
°C
These parameters are provided for reference only.
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7.7 Typical Characteristics
458
8
7
456
PoE - Current Limit - mA
IVDD - Bias Current - mA
6
TJ = 125°C
5
4
3
TJ = 25°C
2
454
452
450
448
1
TJ = -40°C
0
0
2
6
4
VVDD-VSS - PoE Voltage - V
446
-40
10
8
Figure 1. Detection Bias Current vs Voltage
VVC = 8.6 V
140
TJ = -40°C
5
IVC - Source Current - mA
VVDD1 = 10.2 V
120
100
80
VVDD1 = 19.2 V
60
VVDD1 = 35 V
40
20
-40
TJ = 25°C
4
TJ = 125°C
3
2
1
0
-20
0
20
40
60
80
TJ - Junction Temperature - °C
100
120
5
Figure 3. Converter Start Time vs Temperature
10
15
20
25
30
35
40
VVDD1-RTN - V
45
50
55
60
Figure 4. Converter Start-Up Source Current vs VVDD1
1200
1000
Gate Open
VVC = 12 V
900
Gate Open
TJ = 25°C
500 kHz
700
VC - Controller Bias Current - mA
800
250 kHz
600
100 kHz
500
400
50 kHz
300
200
VCTL = 0 V
1000
500 kHz
800
250 kHz
600
100 kHz
400
50 kHz
200
VCTL = 0 V
100
0
-40
0
-20
0
20
40
60
80
TJ - Junction Temperature - °C
100
120
7
9
11
13
15
17
VC - Controller Bias Voltage - V
Figure 5. Controller Bias Current vs Temperature
8
120
100
6
CVC = 22 mF
Converter Start Time - ms
20
40
60
80
TJ - Junction Temperature - °C
Figure 2. PoE Current Limit vs Temperature
160
IVC - Sinking - mA
0
-20
Figure 6. Controller Bias Current vs Voltage
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Typical Characteristics (continued)
300
650
800
200
550
RFRS = 30.1 kW (500 kHz)
150
500
RFRS = 148.5 kW (100 kHz)
450
100
RFRS = 301 kW (50 kHz)
Switching Frequency - kHz
600
400
50
600
Typical
500
400
300
200
100
0
350
0
-40
-20
0
60
40
80
20
TJ - Junction Temperature - °C
100
0
120
20
30
40
6
50
-1
Figure 8. Switching Frequency vs Programmed Resistance
124
VSLOPE - Slope Compensation - mVPP
79
RFRS = 301 kW (50 kHz)
78
RFRS = 148.5 kW (100 kHz)
77.5
RFRS = 60.4 kW (250 kHz)
77
RFRS = 30.1 kW (500 kHz)
76.5
76
-40
-20
0
60
80
20
40
TJ - Junction Temperature - °C
100
122
120
118
116
114
-40
120
Blanking Period (RBLNK 115 kW) - ns
78.5
ISLOPE - Slope Compensation - mAPP
10
Programmed Resistance (10 / RFRS ) - W
Figure 7. Switching Frequency vs Temperature
Maximum Duty Cycle - %
Ideal
700
250
Switching Frequency - kHz
Switching Frequency - kHz
RFRS = 60.4 kW (250 kHz)
235
-20
0
20
40
60
80
TJ - Junction Temperature - °C
100
120
Figure 12. Blanking Period vs Temperature
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450
18
400
14
350
10
300
6
250
2
200
-2
150
-6
100
-10
50
-14
0
0
50
100
150
200
250
RBLNK - kW
300
350
Difference from Computed - ns
Blanking Period - ns
Typical Characteristics (continued)
-18
400
Figure 13. Blanking Period vs RBLNK
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8 Detailed Description
8.1 Overview
The TPS23753A device has a PoE that contains all of the features needed to implement an IEEE802.3at Type 1
powered device (PD) such as detection, classification, and 140-mA inrush current mode DC-DC controller
optimized specifically for isolated converters. The TPS23753A device integrates a low 0.7-Ω internal switch to
allow for up to 405 mA of continuous current through the PD during normal operation. The TPS23753A device
contains several protection features such as thermal shutdown, current limit foldback, and a robust 100-V internal
switch.
8.2 Functional Block Diagram
VC
VDD1
Oscillator
FRS
CTL
enb
800ms
Soft Start
50kW
CONV.
OFF
enb
+
1
0.75V enb
40mA
(pk)
RTN
CLRB
Blank
Switch
Matrix
2.875kW
CS
GATE
D
Q
CK
+
50kW
Control
Converter
Thermal
Monitor
+
0.55V
VB
Regulator
Reference
-
RTN
1.5V
& 1.2V
APDb
BLNK
APD
VDD
11.5V &
9. 5V
Class
Regulator
AUXb
CLS
2.53V
22V &
21.25V
12.5V
& 1V
V SS
DEN
400ms
Common
Circuits and
PoE Thermal
Monitor
S Q
R
35V &
30.5V
CONV.
OFF
H
L
1
ILIMb
+
0
EN
VSS
RTN
80mW
AUXb
4.5V
APDb
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8.3 Feature Description
8.3.1 Pin Description
See Figure 25 for component reference designators (RCS for example ), and Electrical Characteristics: Controller
Section Only for values denoted by reference (VCSMAX for example). Electrical Characteristic values take
precedence over any numerical values used in the following sections.
8.3.1.1 APD
APD forces power to come from an external adapter connected from VDD1 to RTN by opening the hotswap
switch. TI recommends using a resistor divider. The divider provides ESD protection, leakage discharge for the
adapter ORing diode, and input voltage qualification. Voltage qualification assures the adapter can support the
PD before the PoE current is cut off.
Select the APD divider resistors per Equation 1 and Equation 2, where VADPTR-ON is the desired adapter voltage
that enables the APD function as adapter voltage rises.
RAPD1 = RAPD 2 x (VADPTR _ ON - VAPDEN ) VAPDEN
VADPTR _ OFF =
RAPD1 + RAPD 2
RAPD 2
(1)
x (VAPDEN - VAPDH )
(2)
The CLS output is disabled when a voltage above VAPDEN is applied to the APD pin.
Place the APD pulldown resistor adjacent to the APD pin.
APD must be tied to RTN when not used.
8.3.1.2 BLNK
Blanking provides an interval between the gate drive going high and the current comparator on CS actively
monitoring the input. This delay allows the normal turnon current transient (spike) to subside before the
comparator is active, preventing undesired short duty cycles and premature current limiting.
Connect BLNK to RTN to obtain the internally set blanking period. Connect a resistor from BLNK to RTN for a
programmable blanking period. The relationship between the desired blanking period and the programming
resistor is defined by Equation 3.
RBLNK (k Ω ) = t BLNK (ns )
(3)
Place the resistor adjacent to the BLNK pin when it is used.
8.3.1.3 CLS
Connect a resistor from CLS to VSS to program the classification current per IEEE 802.3-at. The PD power
ranges and corresponding resistor values are listed in Table 1. The power assigned must correspond to the
maximum average power drawn by the PD during operation. The TPS23753A supports class 0 – 3 power levels.
8.3.1.4 CS
The current-sense input for the DC-DC converter should be connected to the high side of the current-sense
resistor of the switching MOSFET. The current-limit threshold, VCSMAX, defines the voltage on CS above which
the GATE ON-time are terminated regardless of the voltage on CTL.
The TPS23753A provides internal slope compensation to stabilize the current mode control loop. If the provided
slope is not sufficient, the effective slope may be increased by addition of RS per Figure 20.
Routing between the current-sense resistor and the CS pin must be short to minimize cross-talk from noisy
traces such as the gate drive signal.
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Feature Description (continued)
8.3.1.5 CTL
CTL is the voltage control loop input to the PWM (pulse width modulator). Pulling VCTL below VZDC causes GATE
to stop switching. Increasing VCTL above VZDC raises the switching MOSFET programmed peak current. The
maximum (peak) current is requested at approximately VZDC + (2 × VCSMAX). The AC gain from CTL to the PWM
comparator is 0.5.
Use VB as a pullup source for CTL.
8.3.1.6 DEN
Connect a 24.9-kΩ resistor from DEN to VDD to provide the PoE detection signature. DEN goes to a high
impedance state when not in the detection voltage range. Pulling DEN to VSS during powered operation causes
the internal hotswap MOSFET and class regulator to turn off.
8.3.1.7 FRS
Connect a resistor from FRS to RTN to program the converter switching frequency. Select the resistor using
Equation 4.
RFRS ( k Ω ) =
15000
fSW ( kHz )
(4)
The converter may be synchronized to a frequency above its maximum free-running frequency by applying short
AC-coupled pulses into the FRS pin. More information is provided in Application and Implementation.
The FRS pin is high impedance. Keep the connections short and apart from potential noise sources.
8.3.1.8 GATE
Gate drive output for the DC-DC converter switching MOSFET.
8.3.1.9 RTN
RTN is internally connected to the drain of the PoE hotswap MOSFET, and the DC-DC controller return. RTN
must be treated as a local reference plane (ground plane) for the DC-DC controller and converter primary to
maintain signal integrity.
8.3.1.10 VB
VB is an internal 5-V control rail that must be bypassed by a 0.1-μF capacitor to RTN. VB should be used to bias
the feedback optocoupler.
8.3.1.11 VC
VC is the bias supply for the DC-DC controller. The MOSFET gate driver runs directly from VC. VB is regulated
down from VC, and is the bias voltage for the rest of the converter control. A start-up current source from VDD1 to
VC is controlled by a comparator with hysteresis to implement a bootstrap start-up of the converter. VC must be
connected to a bias source, such as a converter auxiliary output, during normal operation.
A minimum 0.22-μF capacitor, located adjacent to the VC pin, must be connected from VC to RTN to bypass the
gate driver. A larger total capacitance is required for start-up.
8.3.1.12 VDD
Positive input power rail for PoE control that is derived from the PoE. VDD should be bypassed to VSS with a
0.1-μF (X7R,10%) capacitor as required by the standard. A transient suppressor (Zener) diode, must be
connected from VDD to VSS to protect against overvoltage transients.
8.3.1.13 VDD1
Source of DC-DC converter start-up current. Connect to VDD for most applications. VDD1 may be isolated by a
diode from VDD to support PoE-priority operation.
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Feature Description (continued)
8.3.1.14 VSS
VSS is the PoE input-power return side. It is the reference for the PoE interface circuits, and has a current-limited
hotswap switch that connects it to RTN. VSS is clamped to a diode drop above RTN by the hotswap switch. A
local VSS reference plane should be used to connect the input components and the VSS pin.
8.4 Device Functional Modes
The following text is intended as an aid in understanding the operation of the TPS23753A, but it is not a
substitute for the actual IEEE 802.3at standard. The IEEE 802.3at standard is an update to IEEE 802.3-2008
clause 33 (PoE), adding high-power options and enhanced classification.
Generally speaking, a device compliant to IEEE 802.3-2008 is referred to as a type 1 device, and devices with
high power or enhanced classification is referred to as type 2 devices. The TPS23753A is intended to power type
1 devices (up to 13 W), and is fully compliant to IEEE 802.3at for hardware classes 0 - 3. Standards change and
must always be referenced when making design decisions.
2.7
10.1 14.5
3/06/08
20.5
30
Maximum Input
Voltage
Must Turn On byVoltage Rising
Lower Limit Proper Operation
Must Turn Off by Voltage Falling
Classification
Upper Limit
Shutdown
Classify
Detect
0
Classification
Lower Limit
Detection
Upper Limit
Detection
Lower Limit
The IEEE 802.3at standard defines a method of safely powering a PD (powered device) over a cable, and then
removing power if a PD is disconnected. The process proceeds through an idle state and three operational states
of detection, classification, and operation. The PSE leaves the cable unpowered (idle state) while it periodically
looks to see if something has been plugged in; this is referred to as detection. The low power levels used during
detection are unlikely to damage devices not designed for PoE. If a valid PD signature is present, the PSE may
inquire how much power the PD requires; this is referred to as (hardware) classification. Only Type 2 PSEs are
required to do hardware classification. The PD may return the default 13-W current-encoded class, or one of four
other choices. The PSE may then power the PD if it has adequate capacity. Once started, the PD must present
the maintain power signature (MPS) to assure the PSE that it is still present. The PSE monitors its output for a
valid MPS, and turns the port off if it loses the MPS. Loss of the MPS returns the PSE to the idle state. Figure 14
shows the operational states as a function of PD input voltage.
Normal Operation
36
42
57
PI Voltage (V)
Figure 14. IEEE 802.3-2005 (Type 1) Operational States
The PD input is typically an RJ-45 eight-lead connector which is referred to as the power interface (PI). PD input
requirements differ from PSE output requirements to account for voltage drops in the cable and operating
margin. The IEEE 802.3at standard uses a cable resistance of 20 Ω for type 1 devices to derive the voltage limits
at the PD based on the PSE output voltage requirements. Although the standard specifies an output power of
15.4 W at the PSE, only 13 W is available at the PI due to the worst-case power loss in the cable. The PSE can
apply voltage either between the RX and TX pairs (pins 1–2 and 3–6 for 10baseT or 100baseT), or between the
two spare pairs (4–5 and 7–8). The PSE may only apply voltage to one set of pairs at a time. The PD uses input
diode bridges to accept power from any of the possible PSE configurations. The voltage drops associated with
the input bridges create a difference between the standard limits at the PI and the TPS23753A specifications.
The PSE is permitted to disconnect a PD if it draws more than its maximum class power over a one second
interval. A Type 1 PSE compliant to IEEE 802.3at is required to limit current to between 400 mA and 450 mA
during powered operation, and it must disconnect the PD if it draws this current for more than 75 ms. Class 0
and 3 PDs may draw up to 400-mA peak currents for up to 50 ms. The PSE may set lower output current limits
based on the declared power requirements of the PD.
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Device Functional Modes (continued)
8.4.1 Threshold Voltages
Operational State
The TPS23753A has a number of internal comparators with hysteresis for stable switching between the various
states as shown in Figure 14. Figure 15 relates the parameters in Electrical Characteristics: Controller Section
Only and Electrical Characteristics: PoE and Control to the PoE states. The mode labeled idle between
classification and operation implies that the DEN, CLS, and RTN pins are all high impedance.
PD Powered
Idle
Classification
VVDD-VSS
Detection
VCL_HYS
1.4V
VCL_ON
VUVLO_H
VCU_HYS
VCU_OFF
VUVLO_R
Note: Variable names refer to Electrical Characteristic
Table parameters
Figure 15. Threshold Voltages
8.4.2 PoE Start-Up Sequence
The waveforms of Figure 16 demonstrate detection, classification, and start-up from a Type 1 PSE. The key
waveforms shown are VVDD-VSS, VRTN-VSS, and IPI. IEEE 802.3at requires a minimum of two detection levels;
however, four levels are shown in this example. Four levels guard against misdetection of a device when plugged
in during the detection sequence.
Figure 16. PoE Start-Up Sequence
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Device Functional Modes (continued)
8.4.3 Detection
The TPS23753A is in detection mode whenever VVDD-VSS is below the lower classification threshold. When the
input voltage rises above VCL_ON, the DEN pin goes to an open-drain condition to conserve power. While in
detection, RTN is high impedance, almost all the internal circuits are disabled, and the DEN pin is pulled to VSS.
An RDEN of 24.9 kΩ (1%), presents the correct signature. It may be a small, low-power resistor because it only
sees a stress of about 5 mW. A valid PD detection signature is an incremental resistance between 23.75 kΩ and
26.25 kΩ at the PI.
The detection resistance seen by the PSE at the PI is the result of the input bridge resistance in series with the
parallel combination of RDEN and the TPS23753A bias loading. The incremental resistance of the input diode
bridge may be hundreds of ohms at the very low currents drawn when 2.7 V is applied to the PI. The input bridge
resistance is partially cancelled by the effective resistance of the TPS23753A during detection.
8.4.4 Hardware Classification
Hardware classification allows a PSE to determine the power requirements of a PD before starting, and helps
with power management once power is applied. The maximum power entries in Table 1 determine the class the
PD must advertise. A Type 1 PD may not advertise Class 4. The PSE may disconnect a PD if it draws more than
its stated Class power. The standard permits the PD to draw limited current peaks; however, the average power
requirement always applies.
Voltage from 14.5 V to 20.5 V is applied to the PD for up to 75 ms during hardware classification. A fixed output
voltage is sourced by the CLS pin, causing a fixed current to be drawn from VDD through RCLS. The total current
drawn from the PSE during classification is the sum of bias and RCLS currents. PD current is measured and
decoded by the PSE to determine which of the five available classes is advertised (see Table 1). The
TPS23753A disables classification above VCU_OFF to avoid excessive power dissipation. CLS voltage is turned off
during PD thermal limit or when APD or DEN are active. The CLS output is inherently current-limited, but should
not be shorted to VSS for long periods of time.
Table 1. Class Resistor Selection
CLASS CURRENT
REQUIREMENT
POWER AT PD PI
CLASS
MAXIMUM
(mA)
RESISTOR (Ω)
MINIMUM
(W)
MAXIMUM (W)
MINIMUM (mA)
0
0.44
12.95
0
4
1270
1
0.44
3.84
9
12
243
2
3.84
6.49
17
20
137
3
6.49
12.95
26
30
90.9
4
12.95
25.5
36
44
63.4
NOTES
Only permitted for type 2 devices
8.4.5 Maintain Power Signature (MPS)
The MPS is an electrical signature presented by the PD to assure the PSE that it is still present after operating
voltage is applied. A valid MPS consists of a minimum DC current of 10 mA (at a duty cycle of at least 75 ms on
every 225 ms) and an AC impedance lower than 26.25 kΩ in parallel with 0.05 μF. The AC impedance is usually
accomplished by the minimum CIN requirement of 5 μF. When APD or DEN are used to force the hotswap switch
off, the DC MPS is not met. A PSE that monitors the DC MPS will remove power from the PD when this occurs.
A PSE that monitors only the AC MPS may remove power from the PD.
8.4.6 TPS23753A Operation
8.4.6.1 Start-Up and Converter Operation
The internal PoE undervoltage lockout (UVLO) circuit holds the hotswap switch off before the PSE provides full
voltage to the PD. This prevents the converter circuits from loading the PoE input during detection and
classification. The converter circuits discharges CIN, CVC, and CVB while the PD is unpowered. Thus VRTN-VDD will
be a small voltage just after full voltage is applied to the PD, as seen in Figure 16.
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The PSE drives the PI voltage to the operating range once it has decided to power up the PD. When VDD rises
above the UVLO turnon threshold (VUVLO-R, approximately 35 V) with RTN high, the TPS23753A enables the
hotswap MOSFET with an approximately 140-mA (inrush) current limit. See the waveforms of Figure 17 for an
example. Converter switching is disabled while CIN charges and VRTN falls from VDD to nearly VSS; however, the
converter start-up circuit is allowed to charge CVC. Once the inrush current falls about 10% below the inrush
current limit, the PD control switches to the operational level (approximately 450 mA) and converter switching is
permitted.
Converter switching is allowed if the PD is not in inrush and the VC UVLO circuit permits it. Continuing the startup sequence shown in Figure 17, VVC rises as the start-up current source charges CVC and M1 switching is
inhibited by the status of the VC UVLO. The VB regulator powers the internal converter circuits as VVC rises.
Start-up current is turned off, converter switching is enabled, and a soft-start cycle starts when VVC exceeds
UVLO1 (approximately 9 V). VVC falls as it powers both the internal circuits and the switching MOSFET gate. If
the converter control-bias output rises to support VVC before it falls to UVLO1 – UVLO1H (approximately 5.5 V), a
successful start-up occurs. Figure 17 shows a small droop in VVC while the output voltage rises smoothly and a
successful start-up occurs.
10
100mA/Div
INRUSH
8
Exaggerated primarysecondary softstart handoff
IPI
6
10V/DIV
7
VC-RTN
5
4
VOUT
Turn ON
2V/DIV
3
-0.5
50V/DIV
2
1
0
-0.6
VDD-RTN
-0.7
t - Time 10 - ms/DIV
Figure 17. Power Up and Start
If VVDD-VSS drops below the lower PoE UVLO (UVLOR – UVLOH, approximately 30.5 V), the hotswap MOSFET is
turned off, but the converter still runs. The converter stops if VVC falls below the converter UVLO (UVLO1 –
UVLOH, approximately 5.5 V), the hotswap is in inrush current limit, or 0% duty cycle is demanded by VCTL (VCTL
< VZDC, approximately 1.5 V), or the converter is in thermal shutdown.
8.4.6.2 PD Self-Protection
The PD section has the following self-protection functions.
• Hotswap switch current limit
• Hotswap switch foldback
• Hotswap thermal protection
The internal hotswap MOSFET is protected against output faults with a current limit and deglitched foldback. The
PSE output cannot be relied on to protect the PD MOSFET against transient conditions, requiring the PD to
provide fault protection. High stress conditions include converter output shorts, shorts from VDD1 to RTN, or
transients on the input line. An overload on the pass MOSFET engages the current limit, with VRTN-VSS rising as a
result. If VRTN rises above approximately 12 V for longer than approximately 400 μs, the current limit reverts to
the inrush limit, and turns the converter off. The 400-μs deglitch feature prevents momentary transients from
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causing a PD reset, provided that recovery lies within the bounds of the hotswap and PSE protection. Figure 18
shows an example of recovery from a 15-V PSE rising voltage step. The hotswap MOSFET goes into current
limit, overshooting to a relatively low current, recovers to 420-mA, full-current limit, and charges the input
capacitor while the converter continues to run. The MOSFET did not go into foldback because VRTN-VSS was
below 12 V after the 400-μs deglitch.
Figure 18. Response to PSE Step Voltage
The PD control has a thermal sensor that protects the internal hotswap MOSFET. Conditions like start-up or
operation into a VDD to RTN short cause high power dissipation in the MOSFET. An overtemperature shutdown
(OTSD) turns off the hotswap MOSFET and class regulator, which are restarted after the device cools. The PD
restarts in inrush current limit when exiting from a PD overtemperature event.
Pulling DEN to VSS during powered operation causes the internal hotswap MOSFET to turn off. This feature
allows a PD with secondary-side adapter ORing to achieve adapter priority. Take care with synchronous
converter topologies that can deliver power in both directions.
The hotswap switch is forced off under the following conditions:
• VAPD above VAPDEN (approximately 1.5 V)
• VDEN ≤ VPD_DIS when VVDD-VSS is in the operational range
• PD over temperature
• VVDD-VSS < PoE UVLO (approximately 30.5 V).
8.4.6.3 Converter Controller Features
The TPS23753A DC-DC controller implements a typical current-mode control as shown in Figure 19. Features
include oscillator, overcurrent and PWM comparators, current-sense blanker, soft start, and gate driver. In
addition, an internal current-compensation ramp generator, frequency synchronization logic, thermal shutdown,
and start-up current source with control are provided.
The TPS23753A is optimized for isolated converters, and does not provide an internal error amplifier. Instead,
the optocoupler feedback is directly fed to the CTL pin which serves as a current-demand control for the PWM
and converter. There is an offset of VZDC (approximately 1.5 V) and 2:1 resistor divider between the CTL pin and
the PWM. A VCTL below VZDC stops converter switching, while voltages above (VZDC + 2 × VCSMAX) does not
increase the requested peak current in the switching MOSFET. Optocoupler biasing design is eased by this
limited control range.
The internal start-up current source and control logic implement a bootstrap-type start-up. The start-up current
source charges CVC from VDD1 when the converter is disabled (either by the PD control or the VC control), while
operational power must come from a converter (bias winding) output. Loading on VC and VB must be minimal
while CVC charges, otherwise the converter may never start. The optocoupler does not load VB when the
converter is off. The converter shuts off when VC falls below its lower UVLO. This can happen when power is
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removed from the PD, or during a fault on a converter output rail. When one output is shorted, all the output
voltages fall including the one that powers VC. The control circuit discharges VC until it hits the lower UVLO and
turns off. A restart initiates as described in Start-Up and Converter Operation if the converter turns off and there
is sufficient VDD1 voltage. This type of operation is sometimes referred to as hiccup mode, which provides robust
output short protection by providing time-average heating reduction of the output rectifier.
Take care in the design of the transformer and VC bias circuit to obtain hiccup overload protection. Leading-edge
voltage overshoot on the bias winding may cause VC to peak-charge, preventing the expected tracking with
output voltage. RVC (Figure 25) is often required slow the peak charging. Good transformer bias-to-outputwinding coupling results in reduced overshoot and better voltage tracking.
The start-up current source transitions to a resistance as (VDD1 – VC) falls below 7 V, but starts the converter
from 12-V adapters within tST (VDD1 ≥ 10.2, tST approximately 85 ms). The converter starts from lower voltages,
limited by the case when charge current equals the device bias current at voltage below the upper VC UVLO. The
bootstrap source provides reliable start-up from widely varying input voltages, and eliminates the continual power
loss of external resistors. The start-up current source does not charge above the maximum recommended VVC if
the converter is disabled and there is sufficient VDD1 to charge higher.
The peak current limit does not have duty cycle dependency unless RS is used as shown in Figure 20 to increase
slope compensation. This makes it easier to design the current limit to a fixed value.
The TPS23753A blanker timing is precise enough that the traditional R-C filters on CS can be eliminated. This
avoids current-sense waveform distortion, which tends to get worse at light output loads. While the internally set
blanking period is relatively precise, almost all converters require their own blanking period. The TPS23753A
provides the BLNK pin to allow this programming. There may be some situations or designers that prefer an R-C
approach. The TPS23753A provides a pulldown on CS during the GATE OFF-time to improve sensing when an
R-C filter must be used. The CS input signal must be protected from nearby noisy signals like GATE drive and
the MOSFET drain.
Converters require a soft start on the voltage error amplifier to prevent output overshoot on start-up. Figure 19
shows a common implementation of a secondary-side soft start that works with the typical TL431 error amplifier
shown in Figure 25. This secondary-side error amplifier does not become active until there is sufficient voltage on
the secondary. The TPS23753A provides a primary-side soft start, which persists long enough (approximately
800 μs) for secondary side voltage-loop soft start to take over; however, the actual start-up is typically shorter
than this. The primary-side current-loop soft-start controls the switching MOSFET peak current by applying a
slowly rising ramp voltage to a second PWM control input. The lower of the CTL and soft-start ramps controls the
PWM comparator. Figure 17 shows an exaggerated handoff between the primary and secondary-side soft start
that is most easily seen in the IPI waveform. The output voltage rises in a smooth monotonic fashion with no
overshoot. The soft-start handoff in this example could have been optimized by decreasing the secondary-side
soft-start period.
From Regulated
Output Voltage
ROB
RSS
RFBU
CIZ
DSS
CSS
RFBL
TLV 431
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Figure 19. Example of Soft-Start Circuit Added to Error Amplifier
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The DC-DC controller has an OTSD that can be triggered by heat sources including the VB regulator, GATE
driver, bootstrap current source, and bias currents. The controller OTSD turns off VB, the GATE driver, resets the
soft-start generator, and forces the VC control into an undervoltage state.
8.4.7 Special Switching MOSFET Considerations
Take special care in selecting the converter switching MOSFET. The TPS23753A converter section has
minimum VC operating voltage of approximately 5.5 V, which is reflected in the applied gate voltage. This occurs
during an output overload, or towards the end of a (failed) bootstrap start-up. The MOSFET must be able to carry
the anticipated peak fault current at this gate voltage.
8.4.8 Thermal Considerations
Sources of nearby local PCB heating must be considered during the thermal design. Typical calculations assume
that the TPS23753A is the only heat source contributing to the PCB temperature rise. It is possible for a normally
operating TPS23753A device to experience an OTSD event if it is excessively heated by a nearby device.
8.4.9 Blanking – RBLNK
The TPS23753A BLNK feature permits programming of the blanking period with specified tolerance. Selection of
the blanking period is often empirical because it is affected by parasitics and thermal effects of every device
between the gate-driver and output capacitors.
There is a critical range of blanking period that is bounded on the short side by erratic operation, and on the long
side by potentially harmful switching-MOSFET and output rectifier currents during a short circuit. The minimum
blanking period prevents the current limit and PWM comparators from being falsely triggered by the inherent
current spike that occurs when the switching MOSFET turns on. The maximum blanking period is bounded by
the ability of the output rectifier to withstand the currents experienced during a converter output short.
The TPS23753A provides a choice between internal fixed and programmable blanking periods. The blanking
period is specified as an increase in the minimum GATE on time over the inherent gate driver and comparator
delays. The default period (see Electrical Characteristics: Controller Section Only and Electrical Characteristics:
PoE and Control) is selected by connecting BLNK to RTN, and the programmable period is set with a resistor
from BLNK to RTN using Equation 5.
RBLNK (k Ω ) = t BLNK (ns )
(5)
For example, a 100-ns period is programmed by a 100-kΩ resistor. For a brand-new design, TI recommends
designing an initial blanking period of 125 ns. This period must be turned when the converter is operational.
8.4.10 Current Slope Compensation
Current-mode control requires addition of a compensation ramp to the sensed inductor (flyback transformer)
current for stability at duty cycles near and over 50%. The TPS23753A has a maximum duty cycle limit of 78%,
permitting the design of wide input-range flyback converters with a lower voltage stress on the output rectifiers.
While the maximum duty cycle is 78%, converters may be designed that run at duty cycles well below this for a
narrower, 36-V to 57-V range. The TPS23753A provides a fixed internal compensation ramp that suffices for
most applications. RS (see Figure 20) may be used if the internally provided slope compensation is not enough. It
works with ramp current (IPK = ISL-EX, approximately 40 μA) that flows out of the CS pin when the MOSFET is on.
The IPK specification does not include the approximately 3-μA fixed current that flows out of the CS pin.
Most current-mode control papers and application notes define the slope values in terms of VPP/TS (peak ramp
voltage / switching period); however, Electrical Characteristics: Controller Section Only specifies the slope peak
(VSLOPE) based on the maximum duty cycle. Assuming that the desired slope, VSLOPE-D (in mV/period), is based
on the full period, compute RS per Equation 6 where VSLOPE, DMAX, and ISL-EX are from Electrical Characteristics:
Controller Section Only with voltages in mV, current in μA, and the duty cycle is unitless (for example, DMAX =
0.78).
VSLOPE (mV )
VSLOPE _ D (mV ) −
DMAX
⋅ 1000
RS (Ω) =
ISL _ EX ( µA)
20
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RTN
GATE
CS
RS
RCS
CS
5/09/08
Copyright © 2016, Texas Instruments Incorporated
Figure 20. Additional Slope Compensation
CS may be required if the presence of RS causes increased noise, due to adjacent signals like the gate drive, to
appear at the CS pin. The TPS23753A has an internal pulldown on CS ( approximately 400 Ω maximum) while
the MOSFET is OFF to reduce cycle-to-cycle carry-over voltage on CS.
8.4.11 FRS and Synchronization
The FRS pin programs the (free-running) oscillator frequency, and may also be used to synchronize the
TPS23753A converter to a higher frequency. The internal oscillator sets the maximum duty cycle and controls
the current-compensation ramp circuit, making the ramp height independent of frequency. RFRS must be selected
per Equation 7.
RFRS ( k Ω ) =
15000
fSW ( kHz )
(7)
The TPS23753A may be synchronized to an external clock to eliminate beat frequencies from a sampled system,
or to place emission spectrum away from an RF input frequency. Synchronization may be accomplished by
applying a short pulse ( > 25 ns) of magnitude VSYNC to FRS as shown in Figure 21. RFRS must be chosen so
that the maximum free-running frequency is just below the desired synchronization frequency. The
synchronization pulse terminates the potential ON-time period, and the OFF-time period does not begin until the
pulse terminates. A short pulse is preferred to avoid reducing the potential ON-time.
TSYNC
RFRS
FRS
47pF
TSYNC
1000pF
VSYNC
RTN
47pF
Synchronization
Pulse
RFRS
FRS
RT
Synchronization
Pulse
RTN
Figure 21 shows examples of nonisolated and transformer-coupled synchronization circuits RT reduces noise
susceptibility for the isolation transformer implementation. The FRS node must be protected from noise because
it is high impedance.
1:1
VSYNC
Copyright © 2016, Texas Instruments Incorporated
Figure 21. Synchronization
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8.4.12 Adapter ORing
Many PoE-capable devices are designed to operate from either a wall adapter or PoE power. A local power
solution adds cost and complexity, but allows a product to be used if PoE is not available in a particular
installation. While most applications only require that the PD operate when both sources are present, the
TPS23753A supports forced operation from either of the power sources. Figure 22 illustrates three options for
diode ORing external power into a PD. Only one option would be used in any particular design. Option 1 applies
power to the TPS23753A PoE input, option 2 applies power between the TPS23753A PoE section and the power
circuit, and option 3 applies power to the output side of the converter. Each of these options has advantages and
disadvantages. A detailed discussion of the TPS23753A and ORing solutions is covered in application note
Advanced Adapter ORing Solutions using the TPS23753, (SLVA306).
VSS
VDD1
VDD
DEN
CLS
Low Voltage
Output
Power
Circuit
TPS23753
RCLS
58V
From Spare
Pairs or
Transformers
0.1uF
RDEN
From Ethernet
Transformers
Optional for PoE Priority
5/8/08
RTN
Adapter
Option 1
Adapter
Option 2
Adapter
Option 3
Copyright © 2016, Texas Instruments Incorporated
Figure 22. ORing Configurations
Preference of one power source presents a number of challenges. Combinations of adapter output voltage
(nominal and tolerance), power insertion point, and which source is preferred determine solution complexity.
Several factors contributing to the complexity are the natural high-voltage selection of diode ORing (the simplest
method of combining sources), the current limit implicit in the PSE, PD inrush, and protection circuits (necessary
for operation and reliability). Creating simple and seamless solutions is difficult if not impossible for many of the
combinations. However, the TPS23753A offers several built-in features that simplify some combinations.
Several examples demonstrate the limitations inherent in ORing solutions. Diode ORing a 48-V adapter with PoE
(option 1) presents the problem that either source might be higher. A blocking switch would be required to assure
which source was active. A second example is combining a 12-V adapter with PoE using option 2. The converter
draws approximately four times the current at 12 V from the adapter than it does from PoE at 48 V. Transition
from adapter power to PoE may demand more current than can be supplied by the PSE. The converter must be
turned off while CIN capacitance charges, with a subsequent converter restart at the higher voltage and lower
input current. A third example is use of a 12-V adapter with ORing option 1. The PD hotswap would have to
handle four times the current, and have 1/16 the resistance (be 16 times larger) to dissipate equal power. A
fourth example is that MPS is lost when running from the adapter, causing the PSE to remove power from the
PD. If adapter power is then lost, the PD stops operating until the PSE detects and powers the PD.
The most popular preferential ORing scheme is option 2 with adapter priority. The hotswap MOSFET is disabled
when the adapter is used to pull APD high, blocking the PoE source from powering the output. This solution
works well with a wide range of adapter voltages, is simple, and requires few external parts. When the AC power
fails, or the adapter is removed, the hotswap switch is enabled. In the simplest implementation, the PD
momentarily loses power until the PSE completes its start-up cycle.
The DEN pin can be used to disable the PoE input when ORing with option 3. This is an adapter priority
implementation. Pulling DEN low, while creating an invalid detection signature, disables the hotswap MOSFET,
and prevents the PD from redetecting. This would typically be accomplished with an optocoupler that is driven
from the secondary side of the converter.
22
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The least popular technique is PoE priority. It is implemented by placing a diode between the PD supply voltage,
VDD, and the DC-DC controller bias voltage, VDD1. The diode prevents reverse biasing of the PoE input diode
bridges when option 2 adapter ORing is used. The PSE may then detect, classify, and provide power to the PD
while a live adapter is connected. As long as the PoE voltage is greater than the adapter voltage, the PSE
powers the load. The APD function is not used in this technique.
The IEEE standards require that the PI conductors be electrically isolated from ground and all other system
potentials not part of the PI interface. The adapter must meet a minimum 1500-Vac dielectric withstand test
between the output and all other connections for options 1 and 2. The adapter only needs this isolation for option
3 if it is not provided by the converter.
Adapter ORing diodes are shown for all the options to protect against a reverse-voltage adapter, a short on the
adapter input pins, and damage to a low-voltage adapter. ORing is sometimes accomplished with a MOSFET in
option 3.
8.4.13 Protection
A TVS across the rectified PoE voltage per Figure 25 must be used. For general indoor applications, TI
recommends an SMAJ58A or a part with equal to or better performance. If an adapter is connected from VDD1 to
RTN, as in ORing option 2 above, voltage transients caused by the input cable inductance ringing with the
internal PD capacitance can occur. Adequate capacitive filtering or a TVS must limit this voltage to be within the
Absolute Maximum Ratings. Configurations that use DVDD as in Figure 23 may require additional protection
against ESD transients that would turn DVDD off and force all the voltage to appear across the internal hotswap
MOSFET. CVDD and DRTN per Figure 23 provide this additional protection.
From Ethernet
Transformers
CVDD
0.01mF
CIN
VDD1
VDD
RDEN
VSS
RTN
RCLS
DEN
CLS
58V
DRTN
From Spare
Pairs or
Transformers
C1 0.1mF
D1 58V
DVDD
Copyright © 2016, Texas Instruments Incorporated
Figure 23. Additional Protection Against ESD
Outdoor applications require more extensive protection to lightning standards.
8.4.14 Frequency Dithering for Conducted Emissions Control
The international standard CISPR 22 (and adopted versions) is often used as a requirement for conducted
emissions. Ethernet cables are covered as a telecommunication port under section 5.2 for conducted emissions.
Meeting EMI requirements is often a challenge, with the lower limits of Class B being especially hard. Circuit
board layout, filtering, and snubbing various nodes in the power circuit are the first layer of control techniques. A
more detailed discussion of EMI control is presented in Practical Guidelines to Designing an EMI Compliant PoE
Powered Device With Isolated Flyback, SLUA469. Additionally, IEEE 802.3at sections 33.3 and 33.4 have
requirements for noise injected onto the Ethernet cable based on compatibility with data transmission.
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Occasionally, a technique referred to as frequency dithering is used to provide additional EMI measurement
reduction. The switching frequency is modulated to spread the narrowband individual harmonics across a wider
bandwidth, thus lowering peak measurements. The circuit of Figure 24 modulates the switching frequency by
feeding a small AC signal into the FRS pin. These values may be adapted to suit individual needs.
10kΩ
49.9kΩ
VB
+
-
6.04kΩ
TL331IDBV
4.99kΩ
0.01µF
10kΩ
301kΩ
1uF
To
FRS
RTN
Figure 24. Frequency Dithering
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPS23753A supports power supply topologies that require a single PWM gate drive with current-mode
control. Figure 25 provides an example of a simple diode rectified flyback converter.
BR1
T1
VDD
*
RBLNK
Adapter
RFRS
R APD1
RAPD2
DA
M1
VB
GATE
CS
CTL
VB
R OB
R CTL
C CTL
RCS
APD
FRS
*
V OUT
R VC
CVB
V SS
C OUT
D VC
CVC
RCLS
BR2
DS
VC
TPS23753
CLS
RTN
BLNK
DEN
VDD1
C IN
D1
58V RDEN
C1
0.1mF
From Spare
Pairs or
Transformers
From Ethernet
Transformers
9.2 Typical Application
C IZ
C IO TLV431
R FBU
R FBL
* Adapter interface and R BLNK are Optional
Copyright © 2016, Texas Instruments Incorporated
Figure 25. Basic TPS23753A Implementation
9.2.1 Design Requirements
Selecting a converter topology along with a design procedure is beyond the scope of this applications section.
For more specific converter design examples refer to the following application notes:
• Advanced Adapter ORing Solutions using the TPS23753, SLVA306
• Implementing a Buck Converter with the TPS23753A, SLVA440
• Using the TPS23753A with an External Error Amplifier, SLVA433
9.2.2 Detailed Design Procedure
A detailed design procedure for PDs using the TPS23753A is covered in Designing with the TPS23753 Powered
Device and Power Supply Controller, SLVA305. Several designs with data are provided in the evaluation module
documentation SLVU314 and SLVU315.
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Typical Application (continued)
9.2.3 Application Curves
10
100mA/Div
INRUSH
8
Exaggerated primarysecondary softstart handoff
IPI
6
10V/DIV
7
VC-RTN
5
4
VOUT
Turn ON
2V/DIV
3
-0.5
50V/DIV
2
1
0
-0.6
VDD-RTN
-0.7
t - Time 10 - ms/DIV
Figure 26. PoE Start-Up Sequence
26
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Figure 27. Power Up and Start
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10 Power Supply Recommendations
The TPS23753A converter must be designed such that the input voltage of the converter is capable of operating
within the IEEE802.3at-recommended input voltage as shown in Figure 14 and the minimum operating voltage of
the adapter if applicable.
11 Layout
11.1 Layout Guidelines
Printed-circuit board layout recommendations are provided in the evaluation module (EVM) documentation
available for these devices.
11.2 Layout Example
Figure 28. Top-Side Placement
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• IEEE Standard for Information Technology … Part 3: Carrier sense multiple access with collision detection
(CSMA/CD) access method and physical layer specifications, IEEE Computer Society, IEEE 802.3™at
(Clause 33)
• Information technology equipment – Radio disturbance characteristics – Limits and methods of measurement,
International Electrotechnical Commission, CISPR 22 Edition 5.2, 2006-03
• Designing with the TPS23753 Powered Device and Power Supply Controller, Eric Wright, TI, SLVA305
• Advanced Adapter ORing Solutions using the TPS23753, Eric Wright, TI, SLVA306
• Practical Guidelines to Designing an EMI-Compliant PoE Powered Device With Isolated Flyback, Donald V.
Comiskey, TI, SLUA469
• TPS23753AEVM-004: Evaluation Module for TPS23753A, SLVU314
• TPS23753AEVM-0041 Evaluation Module for TPS23753A, SLVU315
• Implementing a Buck Converter with the TPS23753A, SLVA440
• Using the TPS23753A with an External Error Amplifier, SLVA433
12.2 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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6-Feb-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TPS23753APW
ACTIVE
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
T23753A
TPS23753APWR
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
T23753A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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