Table of Contents
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User’s Guide
TPS23758EVM-080 Evaluation Module
ABSTRACT
This user’s guide describes the TPS23758 evaluation module (EVM). The TPS23758 evaluation module
(TPS23758EVM-080) contains evaluation and reference circuitry for the TPS23758 device. The TPS23758
device is an IEEE 802.3at Type 1 compliant, powered-device (PD) controller and power supply controller
optimized for primary side regulation flyback converter topologies. The TPS23758EVM-080 is targeted for a 5-V
synchronous-rectified high efficiency 13-W PD solution.
Table of Contents
1 Introduction.............................................................................................................................................................................2
2 Electrical Specifications........................................................................................................................................................ 2
3 Description.............................................................................................................................................................................. 3
4 Schematic................................................................................................................................................................................4
5 General Configuration and Description................................................................................................................................5
6 TPS23758EVM-080 Performance Data.................................................................................................................................. 6
7 EVM Assembly Drawings and Layout Guidelines............................................................................................................. 12
8 Bill of Materials..................................................................................................................................................................... 16
9 Revision History................................................................................................................................................................... 21
List of Figures
Figure 4-1. TPS23758EVM-080 Schematic.................................................................................................................................4
Figure 6-1. Startup Response When Connected to a PoE PSE (TPS23880)............................................................................. 6
Figure 6-2. DCDC Startup........................................................................................................................................................... 6
Figure 6-3. Transient Response from 100 mA to 1 A for a 48-V Input.........................................................................................7
Figure 6-4. Efficiency of the TPS23758EVM-080........................................................................................................................ 8
Figure 6-5. TPS23758EVM-080 Load Regulation....................................................................................................................... 9
Figure 6-6. DCDC Recovery from Output Short.......................................................................................................................... 9
Figure 6-7. SRF = 0 Ω................................................................................................................................................................10
Figure 6-8. SRF = 100 Ω............................................................................................................................................................10
Figure 6-9. SRR = 0 Ω............................................................................................................................................................... 11
Figure 6-10. SRR = 10 Ω........................................................................................................................................................... 11
Figure 7-1. Top-Side Component Placement.............................................................................................................................12
Figure 7-2. Layer 2 Routing....................................................................................................................................................... 12
Figure 7-3. Layer 3 Routing....................................................................................................................................................... 13
Figure 7-4. Bottom-Side Routing............................................................................................................................................... 13
List of Tables
Table 2-1. TPS23758EVM-080 Electrical and Performance Specifications at 25°C....................................................................2
Table 5-1. Connector Functionality.............................................................................................................................................. 5
Table 5-2. Test Points.................................................................................................................................................................. 5
Table 8-1. TPS23758EVM-080 BOM.........................................................................................................................................16
Trademarks
All trademarks are the property of their respective owners.
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Introduction
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1 Introduction
The TPS23758EVM-080 allows reference circuitry evaluation of the TPS23758 device. It contains input and
output power connectors and an array of onboard test points for circuit evaluation.
1.1 Features
•
•
•
•
•
IEEE802.3at Type 1 compliant PoE PD
Class 0 5-V and 2.3-A primary side regulated CCM flyback
Advanced startup
Programmable slew rate and frequency dithering for EMI reduction
Primary-side adapter priority control
1.2 Applications
•
•
•
•
•
•
IP cameras
Access points
Point-of-sale
Barcode readers
IP phones
Wireless LAN- wireless access points
2 Electrical Specifications
Table 2-1. TPS23758EVM-080 Electrical and Performance Specifications at 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER INTERFACE
Input voltage
Applied to the power pins of connectors J1
37
Applied to the power pins of connectors J4
Input UVLO, POE input J1
57
48
Rising input voltage
V
V
36
Falling input voltage
30
Detection voltage
At device terminals
2.7
10.1
Classification voltage
At device terminals
14.5
20.5
Classification Current
Class 0
0
4
V
V
V
mA
Inrush current-limit
140
mA
Operating current-limit
550
mA
DC-TO-DC CONVERTER
Output voltage
VIN = 48 V, ILOAD ≤ ILOAD (max)
Output current
37 V ≤ VIN ≤ 57 V
2.3
A
Output ripple voltage peak-to-peak
VIN = 48 V, ILOAD = 1 A
34
mV
VIN = 48 V, ILOAD= 230 mA
61
VIN = 48 V, ILOAD = 1.15 A
85
Efficiency, end-to-end
VIN = 48 V, ILOAD = 2.3 A
Switching frequency
2
TPS23758EVM-080 Evaluation Module
5
V
%
87
250
kHz
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Description
3 Description
The TPS23758EVM-080 enables full evaluation of the TPS23758 device. Refer to the schematic shown in
Figure 4-1. Ethernet power is applied from J1 and is dropped to the bridge rectifier (D1, D2). The Power over
Ethernet (PoE) transformer needed to transfer power or data is T1. The Bob Smith Terminations help balance
the Ethernet cable impedance and are critical for ESD and EMI or EMC performance. The EMI or EMC filter and
transient protection for the TPS23758 device are at the output of the diode bridge.
Input power can also be applied at J4 from a DC source when power at J1 is not present.
The TPS23758 (U1) PD and DC-to-DC converter circuitry is shown in Figure 4-1. R17 provides the detection
signature. The switched side of the PD controller is to the right of U1. The TPS23758 RTN pin provides inrush
limited turn on and charge of the bulk capacitor, C18.
The DC-to-DC converter is a high-efficiency diode rectified primary-side regulated flyback converter.
Output voltage feedback is provided with R19 and R24 on the bias winding. R16 provides a means for error
injection to measure the frequency response of the converter.
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Schematic
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4 Schematic
Figure 4-1. TPS23758EVM-080 Schematic
4
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General Configuration and Description
5 General Configuration and Description
5.1 Physical Access
Table 5-1 lists the EVM connector functionality. Table 5-2 describes the test point availability and jumper
functionality.
Table 5-1. Connector Functionality
Connector
J1
Label
Description
PWR+DATA
PoE input; connect to PSE power and data source.
J2
DATA
Ethernet data passthrough; connect to downstream Ethernet device.
J3
Output
Output connector to load.
J4
Adapter Input
J5
LED
J6
FREQ
DC-to-DC converter input bypassing the PoE converter; connect a 12-V adapter.
Jump J4 to visually indicate the output voltage.
Jump to 'Fixed' for fixed frequency. Jump to 'Dither' to enable spread spectrum dithering.
Table 5-2. Test Points
Test Point
Label
Description
TP1
BS
TP2
VREG
Bob Smith termination
TP3
VCC
Switching supply voltage
TP4
VPD
Input voltage
Bias winding
TP5
VOUT
Output voltage
TP6, TP10
PGND
Primary ground
TP7
GND
Secondary ground
TP8
VDD
DC-DC converter input
TP9
RSNS
TP11
SST
TP12
VSS
TP13
FB
Current sense voltage
Soft start and hiccup timer
PoE input return ground
Feedback loop
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TPS23758EVM-080 Performance Data
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6 TPS23758EVM-080 Performance Data
6.1 Startup to PSE and DCDC Startup
Figure 6-1 shows the startup response of the TPS23758EVM-080.
Figure 6-1. Startup Response When Connected to a PoE PSE (TPS23880)
Figure 6-2. DCDC Startup
6
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6.2 Transient Response
Figure 6-3 shows the transient response of the TPS23758EVM-080.
Figure 6-3. Transient Response from 100 mA to 1 A for a 48-V Input
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TPS23758EVM-080 Performance Data
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6.3 Efficiency
Figure 6-4 shows the efficiency of the TPS23758EVM-080.
Figure 6-4. Efficiency of the TPS23758EVM-080
8
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6.4 Load Regulation
Figure 6-5. TPS23758EVM-080 Load Regulation
6.5 Recovery from VOUT Short
Figure 6-6. DCDC Recovery from Output Short
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TPS23758EVM-080 Performance Data
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6.6 Slew Rate Adjust
Figure 6-7. SRF = 0 Ω
Figure 6-8. SRF = 100 Ω
10
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Figure 6-9. SRR = 0 Ω
Figure 6-10. SRR = 10 Ω
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EVM Assembly Drawings and Layout Guidelines
7 EVM Assembly Drawings and Layout Guidelines
7.1 PCB Drawings
Figure 7-1 to Figure 7-4 show the component placement and layout of the TPS23758EVM-080.
Figure 7-1. Top-Side Component Placement
Figure 7-2. Layer 2 Routing
12
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Figure 7-3. Layer 3 Routing
Figure 7-4. Bottom-Side Routing
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EVM Assembly Drawings and Layout Guidelines
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7.2 Layout Guidelines
The layout of the PoE front end should follow power and EMI or ESD best-practice guidelines. A basic set of
recommendations includes:
•
•
•
•
•
•
•
•
Pin 22 of the TPS23758 is omitted from the IC to ensure high voltage clearance from Pin 24 (DRAIN).
Therefore, the Pin 22 footprint should be removed when laying out the TPS23758.
It is recommended having at least 8 vias (VSS) connecting the exposed thermal pad through a top layer
plane (2 oz copper recommended) to a bottom VSS plane (2 oz. copper recommended) to help with thermal
dissipation.
The Pin 24 of the TPS23758 should be near the power transformer and the current sense resistor should be
close to Pin 1 of the TPS23758to minimize the primary loop.
Parts placement must be driven by power flow in a point-to-point manner; RJ-45, Ethernet transformer, diode
bridges, TVS and 0.1-μF capacitor, and TPS23758 converter input bulk capacitor.
Make all leads as short as possible with wide power traces and paired signal and return.
No crossovers of signals from one part of the flow to another are allowed.
Spacing consistent with safety standards like IEC60950 must be observed between the 48-V input voltage
rails and between the input and an isolated converter output.
Use large copper fills and traces on SMT power-dissipating devices, and use wide traces or overlay copper
fills in the power path.
The DC-to-DC converter layout benefits from basic rules such as:
•
•
•
•
•
•
•
14
Having at least 4 vias (VDD) near the power transformer pin connected to VDD through multiple layer planes
to help with thermal dissipation of the power transformer.
Having at least 6 vias (secondary ground) near the power transformer pin connected to secondary ground
through multiple layer planes to help with thermal dissipation of the power transformer.
Pair signals to reduce emissions and noise, especially the paths that carry high-current pulses, which include
the power semiconductors and magnetics.
Minimize the trace length of high current power semiconductors and magnetic components.
Use the ground plane for the switching currents carefully.
Keep the high-current and high-voltage switching away from low-level sensing circuits including those outside
the power supply.
Proper spacing around the high-voltage sections of the converter.
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EVM Assembly Drawings and Layout Guidelines
7.3 EMI Containment
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Use compact loops for dv/dt and di/dt circuit paths (power loops and gate drives).
Use minimal, yet thermally adequate, copper areas for heat sinking of components tied to switching nodes
(minimize exposed radiating surface). Hide copper associated with switching nodes under shielded
magnetics, where possible.
Use copper ground planes (possible stitching) and top-layer copper floods (surround circuitry with ground
floods).
Use a 4-layer PCB, if economically feasible (for better grounding).
Minimize the amount of copper area associated with input traces (to minimize radiated pickup).
Heat sink the quiet side of components instead of the switching side, where possible (like the output side of
inductor).
Use Bob Smith terminations, Bob Smith EFT capacitor, and Bob Smith plane. Use Bob Smith plane as a
ground shield on input side of PCB (creating a phantom or literal earth ground).
Use LC filter at DC-to-DC input.
Dampen high-frequency ringing on all switching nodes, if present (allow for possible snubbers).
Control rise times with gate-drive resistors and possibly snubbers.
Switching frequency considerations.
Use of EMI bridge capacitor across isolation boundary (isolated topologies).
Observe the polarity dot on inductors (embed noisy end).
Use of ferrite beads on input (allow for possible use of beads or 0-Ω resistors).
Maintain physical separation between input-related circuitry and power circuitry (use ferrite beads as
boundary line).
Balance efficiency versus acceptable noise margin.
Possible use of common-mode inductors.
Possible use of integrated RJ-45 jacks (shielded with internal transformer and Bob Smith terminations).
End-product enclosure considerations (shielding).
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Bill of Materials
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8 Bill of Materials
Table 8-1 details the EVM bill of materials.
Table 8-1. TPS23758EVM-080 BOM
Designator
Quantity
!PCB1
1
C1, C2
2
C3, C6
PartNumber
Manufacturer
Printed Circuit
Board
PSIL080
Any
1000 pF
CAP, CERM, 1000 1812
pF, 2000 V,+/- 10%,
X7R, 1812
1812GC102KAT1 AVX
A
2
0.01 uF
CAP, CERM, 0.01 0603
uF, 100 V, +/- 10%,
X7R, 0603
06031C103KAT2 AVX
A
C4, C20
2
2200 pF
CAP, CERM, 2200
pF, 2000 V, +/10%, X7R, 1812
1812
C4532X7R3D222 TDK
K130KA
C5
1
CAP CER 3.3 UF
25 V X7R 1206
1206
CL31B335KAHV
PNE
Samsung
C8
1
22 uF
CAP, AL, 22 uF,
SMT Radial F
100 V, +/- 20%, 1.3
ohm, AEC-Q200
Grade 2, SMD
EEE-FK2A220P
Panasonic
C9, C12, C21, C23 4
0.1 uF
CAP, CERM, 0.1
0805
uF, 100 V, +/- 10%,
X7R, 0805
C2012X7R2A104 TDK
K125AA
C10, C11
2
2.2 uF
CAP, CERM, 2.2
uF, 100 V, +/- 10%,
X7R, AEC-Q200
Grade 1,
CGA6N3X7R2A2 TDK
25K230AB
C13, C14, C22
3
1000 pF
CAP, CERM, 1000 0603
pF, 100 V, +/- 10%,
X7R, 0603
C1608X7R2A102 TDK
K080AA
C15, C16, C17
3
100 uF
CAP, CERM, 100
uF, 10 V, +/- 20%,
X5R, 1210
1210
GRM32ER61A10 MuRata
7ME20L
C18, C29
2
2200 pF
CAP, CERM, 2200
pF, 50 V, +/- 10%,
X7R, 0603
0603
C0603C222K5R
AC
C19
1
0.22 uF
CAP, CERM, 0.22 1206
uF, 100 V, +/- 10%,
X7R, 1206
16
Value
Description
PackageReference
Alternate
PartNumber
Alternate
Manufacturer
Kemet
C3216X7R2A224 TDK
K115AA
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Bill of Materials
Table 8-1. TPS23758EVM-080 BOM (continued)
Designator
Quantity
Value
Description
PackageReference
C24
1
1 uF
CAP, CERM, 1 uF, 0603
25 V, +/- 10%, X7R,
AEC-Q200 Grade
1, 0603
GCM188R71E10 MuRata
5KA64D
C25
1
22 pF
CAP, CERM, 22 pF, 0402
50 V, +/- 5%, C0G/
NP0, AEC-Q200
Grade 1, 0402
CGA2B2NP01H2 TDK
20J050BA
C26
1
Cap Ceramic 56pF
50V C0G 5% SMD
0402 125C Paper
T/R
CL05C560JB5N
NNC
Samsung
C27
1
0.022 uF
CAP, CERM, 0.022 0603
uF, 16 V, +/- 10%,
X7R, 0603
C0603C223K4R
ACTU
Kemet
C28
1
1000 pF
CAP, CERM, 1000
pF, 50 V, +/- 5%,
X7R, 0603
0603
CL10C102JB8N
NNC
Samsung ElectroMechanics
C30
1
0.1 uF
CAP, CERM, 0.1
uF, 25 V, +/- 10%,
X7R, AEC-Q200
Grade 1, 0603
0603
CGA3E2X7R1E1 TDK
04K080AA
D1, D2, D10
3
100 V
Diode, Switching,
100 V, 0.2 A,
SOD-123
SOD-123
MMSD4148T1G
D3, D4
2
12 V
Diode, Zener, 12 V, SOD-123
500 mW, SOD-123
MMSZ5242B-7-F Diodes Inc.
D5
1
200 V
Diode, Ultrafast,
200 V, 1 A, SMA
SMA
MURA120T3G
ON Semiconductor
D6, D7
2
100 V
Diode, SwitchingBridge, 100 V, 0.8
A, MiniDIP
MiniDIP
HD01-T
Diodes Inc.
D8
1
24 V
Diode, Zener, 24 V, SMA
1 W, SMA
SMAZ24-13-F
Diodes Inc.
D9
1
100 V
Diode, Schottky,
100 V, 1 A, SMA
B1100-13-F
Diodes Inc.
D11
1
58 V
Diode, TVS, Uni, 58 SMA
V, SMA
SMAJ58A-13-F
Diodes Inc.
D12
1
Yellow
LED, Yellow, SMD
150060YS75000
Wurth Elektronik
D13
1
6.2 V
Diode, Zener, 6.2 V, SOD-123
500 mW, SOD-123
0402 (1005 Metric)
SMA
LED_0603
PartNumber
Manufacturer
Alternate
PartNumber
Alternate
Manufacturer
ON Semiconductor
MMSZ5234B-7-F Diodes Inc.
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Bill of Materials
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Table 8-1. TPS23758EVM-080 BOM (continued)
Designator
Quantity
H1, H2, H3, H4
4
Bumpon,
Transparent Bumpon
Hemisphere, 0.44 X
0.20, Clear
J1, J2
2
RJ45, No LED, tab
up, R/A, TH
J3, J4
2
Terminal Block, 3.5 7.0 x 8.2 x 6.5 mm
mm Pitch, 2x1, TH
J5
1
Header, 2.54 mm, 2 Header, 2.54 mm, 2 x 878980204
x 1, Gold, R/A,
1, R/A, SMT
SMT
Molex
J6
1
Header, 100 mil,
3x1, Gold, TH
Sullins Connector
Solutions
L1
1
3.3 uH
Inductor, Shielded, SMD, 2.2 x 1.45 mm
Composite, 3.3 uH,
0.72 A, 0.28 ohm,
SMD
PFL2015-332ME Coilcraft
B
L2, L4, L5, L7
4
100 ohm
Ferrite Bead, 100
0603
ohm @ 100 MHz, 1
A, 0603
MPZ1608D101B
TD25
TDK
Q1
1
30 V
MOSFET, N-CH, 30 DNH0008A
V, 20 A, DNH0008A
(VSONP-8)
CSD17579Q3A
Texas Instruments
R1, R2, R3, R6
4
75.0
RES, 75.0, 1%, 0.1 0603
W, 0603
RC0603FR-0775 Yageo America
RL
R4
1
3.3 k
RES, 3.3 k, 5%,
0.125 W, 0805
0805
ERJ-6GEYJ332V Panasonic
R5
1
3.9
RES, 3.9, 5%,
0.125 W, AECQ200 Grade 0,
0805
0805
CRCW08053R90 Vishay-Dale
JNEA
R7, R28
2
10
RES, 10, 5%, 0.063 0402
W, AEC-Q200
Grade 0, 0402
CRCW040210R0 Vishay-Dale
JNED
R8, R11, R12, R20
4
0
RES, 0, 5%, 0.1 W, 0603
0603
ERJ-3GEY0R00
V
R9
1
39 k
RES, 39 k, 5%,
0.125 W, 0805
0805
ERJ-6GEYJ393V Panasonic
R10
1
RES SMD 1.3 OHM 1206
5% 1/4W 1206
ERJ-8GEYJ1R3V Panasonic
R13, R14
2
RES, 0.91, 1%,
0.25 W, 0805
CRM0805-FXR910ELF
18
Value
0.91
Description
PackageReference
PartNumber
Manufacturer
SJ-5303
(CLEAR)
3M
16.26 x 14.54 x 15.75 1-406541-1
PBC03SAAN
0805
ED555/2DS
PBC03SAAN
TPS23758EVM-080 Evaluation Module
Alternate
PartNumber
Alternate
Manufacturer
TE Connectivity
On-Shore
Technology
None
Panasonic
Bourns
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Bill of Materials
Table 8-1. TPS23758EVM-080 BOM (continued)
Designator
Quantity
Value
Description
PackageReference
PartNumber
R15
1
0
RES, 1.0 K, 5%,
0.063 W, AECQ200 Grade 0,
0402
0402
CRCW04020000 Vishay-Dale
Z0ED
R16
1
49.9
RES, 49.9, 1%,
0.063 W, 0402
0402
RC0402FR-0749 Yageo America
R9L
R17
1
24.9 k
RES, 24.9 k, 1%,
0.063 W, AECQ200 Grade 0,
0402
0402
CRCW040224K9 Vishay-Dale
FKED
R18
1
2.43 k
RES, 2.43 k, 1%,
0.1 W, AEC-Q200
Grade 0, 0603
0603
CRCW06032K43 Vishay-Dale
FKEA
R19, R22
2
200 k
RES, 200 k, 1%,
0.1 W, 0402
0402
ERJ-2RKF2003X Panasonic
R21
1
200 k
RES, 200 k, 1%,
0.063 W, AECQ200 Grade 0,
0402
0402
CRCW0402200K Vishay-Dale
FKED
R23
1
237 k
RES, 237 k, 1%,
0.063 W, AECQ200 Grade 0,
0402
0402
CRCW0402237K Vishay-Dale
FKED
R24
1
36.5 k
RES, 36.5 k, 1%,
0.063 W, AECQ200 Grade 0,
0402
0402
CRCW040236K5 Vishay-Dale
FKED
R25
1
100
RES, 100, 5%, 0.1
W, AEC-Q200
Grade 0, 0402
0402
ERJ-2GEJ101X
R26
1
9.09 k
RES, 9.09 k, 5%,
0.063 W, AECQ200 Grade 0,
0402
0402
CRCW04029K09 Vishay-Dale
FKED
R27
1
60.4 k
RES, 60.4 k, 1%,
0.063 W, AECQ200 Grade 0,
0402
0402
CRCW040260K4 Vishay-Dale
FKED
R29
1
45.3
RES, 45.3, 1%, 0.1 0603
W, AEC-Q200
Grade 0, 0603
CRCW060345R3 Vishay-Dale
FKEA
SH-J1, SH-J2
2
Shunt, 2.54 mm,
Gold, Black
60900213421
Shunt, 2.54 mm,
Black
SLVUBO2B – APRIL 2019 – REVISED DECEMBER 2020
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Manufacturer
Alternate
PartNumber
Alternate
Manufacturer
Panasonic
Wurth Elektronik
TPS23758EVM-080 Evaluation Module
Copyright © 2020 Texas Instruments Incorporated
19
Bill of Materials
www.ti.com
Table 8-1. TPS23758EVM-080 BOM (continued)
Designator
Quantity
Value
Description
PackageReference
PartNumber
Manufacturer
T1
1
350 uH
Transformer, 350
uH, SMT
358 x 236 x 500 mil
H2019FNLT
Pulse Engineering
T2
1
150 uH
Transformer, 150
uH, SMT
14 x 16.2 mm
LDT1018-50R
Linkcom
Manufacturing Co.
TP1
1
Test Point,
Miniature, SMT
Test Point, Miniature,
SMT
5019
Keystone
TP2, TP3, TP4,
TP5, TP8
5
Test Point,
Miniature, Red, TH
Red Miniature
Testpoint
5000
Keystone
TP6, TP7, TP10,
TP12
4
Test Point,
Miniature, Black,
TH
Black Miniature
Testpoint
5001
Keystone
TP9, TP13
2
Test Point,
Miniature, Orange,
TH
Orange Miniature
Testpoint
5003
Keystone
TP11
1
Test Point,
Miniature, White,
TH
White Miniature
Testpoint
5002
Keystone
U1
1
IEEE 802.3at PoE
PD with No-Opto
Flyback DC-DC
Controller,
RJJ0023B
(VSON-23)
RJJ0023B
TPS23758RJJ
Texas Instruments
FID1, FID2, FID3,
FID4, FID5, FID6
0
Fiducial mark.
There is nothing to
buy or mount.
N/A
N/A
N/A
L3, L6
0
744222
Wurth Elektronik
20
1 mH
Coupled inductor, 1 9.2 x 6 mm
mH, 0.8 A, 0.31
ohm, SMD
TPS23758EVM-080 Evaluation Module
Alternate
PartNumber
Alternate
Manufacturer
750318525
Wurth Elektronik
Texas Instruments
SLVUBO2B – APRIL 2019 – REVISED DECEMBER 2020
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www.ti.com
Revision History
9 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (August 2019) to Revision B (December 2020)
Page
• Updated the numbering format for tables, figures and cross-references throughout the document...................2
• Updated Schematic............................................................................................................................................ 4
• Updated Bill of Materials...................................................................................................................................16
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TPS23758EVM-080 Evaluation Module
21
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