User's Guide
SLUUB11 – April 2014
TPS23785BEVM-522 Evaluation Module
This user’s guide describes the TPS23785B evaluation module (TPS23785BEVM-522). TPS23785BEVM522 contains evaluation and reference circuitry for the TPS23785B. The TPS23785B device is an IEEE
802.3 compliant, powered-device (PD) controller and power supply controller optimized for non-isolated
converter topologies. TPS23785BEVM-522 is targeted at a high-efficiency 5.87-W PD solution.
1
2
3
4
5
6
7
8
Contents
Introduction ................................................................................................................... 2
Electrical Specifications ..................................................................................................... 2
Description .................................................................................................................... 3
Schematic ..................................................................................................................... 4
General Configuration and Description ................................................................................... 5
TPS23785BEVM-522 Performance Data ................................................................................. 7
EVM Assembly Drawing and Layout Guidelines ....................................................................... 10
Bill of Materials ............................................................................................................. 14
1
TPS23785BEVM-522 Schematic .......................................................................................... 4
2
Typical TPS23785BEVM-522 Test Setup ................................................................................ 6
3
Startup Response to Full Load for a 48-V Input ......................................................................... 7
4
Transient Response of 5-V Output from 58 to 580 mA for a 48-V Input ............................................. 7
5
Transient Response of 3.3-V Output from 90 to 900 mA for a 48-V Input ........................................... 8
6
Top Side Component Placement ......................................................................................... 10
7
Top Side Routing ........................................................................................................... 10
8
Layer 2 Routing ............................................................................................................. 11
9
Layer 3 Routing ............................................................................................................. 11
10
Bottom Side Routing ....................................................................................................... 12
11
Bottom Component Placement ........................................................................................... 12
List of Figures
List of Tables
1
TPS23785BEVM-522 Electrical and Performance Specifications at 25°C ........................................... 2
2
Connector Functionality ..................................................................................................... 5
3
Test Points .................................................................................................................... 5
4
Efficiency of the TPS23785BEVM-522.................................................................................... 9
5
TPS23785BEVM-522 BOM
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1
Introduction
1
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Introduction
The TPS23785BEVM-522 evaluation module (EVM) is a fully assembled and tested circuit for evaluating
the TPS23785B high-power, high-efficiency power over Ethernet (PoE) PD and DC-to-DC controller. The
TPS23785B is connected to a dual output non-isolated flyback converter capable of outputting 5 V at 580
mA and 3.3 V at 900 mA. The TPS23785B is compliant with the IEEE802.3at PoE standard. The EVM
contains header connectors for easy connection to external test and application circuitry.
1.1
Features
•
•
•
1.2
Applications
•
•
•
•
2
Class 2 PoE applications
Operates from PoE or auxiliary adapters
Dual output non-isolated flyback converter (5 V at 580 mA, 3.3 V at 900 mA)
Video and VoIP telephones
RFID readers
Security – wired IP cameras
Wireless access points
Electrical Specifications
Table 1. TPS23785BEVM-522 Electrical and Performance Specifications at 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER INTERFACE
Input voltage
Input UVLO, POE input J1
Applied to the power pins of connector J1
0
57
V
Applied to the power pins of connector J4
34
57
V
36.1
V
Rising input voltage
Falling input voltage
29.14
V
Detection voltage
At device terminals
3
10
V
Classification voltage
At device terminals
13
21
V
Classification current
Rclass = 137 Ω
17.6
19.4
mA
Inrush current-limit
100
180
mA
Operating current-limit
850
1100
mA
DC/DC CONVERTER
Output voltage (5 V)
VIN = 48 V, ILOAD ≤ ILOAD (max)
4.98
4.94
V
Output voltage (3.3 V)
VIN = 48 V, ILOAD ≤ ILOAD (max)
3.311
3.310
V
Output current (5 V)
34 V ≤ VIN ≤ 57 V
580
Output current (3.3 V)
34 V ≤ VIN ≤ 57 V
900
Switching frequency
2
250
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mA
mA
kHz
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Description
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3
Description
TPS23785BEVM-522 enables full evaluation of the TPS23785B device. Refer to the schematic in
Section 4. Ethernet power is applied from J1 connects to the PoE transformer T1 needed to transfer
power/data. Power goes through bridge rectifier; the RC circuits C1, R5, C2, and R6 help balance the
Ethernet cable impedance and are critical for ESD and EMI/EMC performance. At the output of the diode
bridge is the EMI/EMC filter and transient protection for the TPS23785B.
Input power can also be applied at J4 from a DC source when power at J1 is not present or when the DCto-DC converter is being evaluated and not the PoE front end.
The TPS23785B (U1) PD and DCDC converter circuitry is shown in Section 4. R33 provides the detection
signature and R11 provides the classification (class 2) signature. The switched side of the PD controller is
located to the right of U1. The TPS23785B RTN pin provides inrush limited turn on and charge of the bulk
capacitor C12.
The DC-to-DC converter is a non-isolated high-efficiency dual-output synchronous flyback converter. The
primary (Q3) switching MOSFET is driven from U1 GATE pin and the secondary (Q5 and Q6) switching
MOSFET is driven from U1 GATE2 pin.
Output voltage feedback is provided with U2. R20 provides a means for error injection to measure the
frequency response of the converter. This feedback circuit drives the U1 CTL pin which provides a voltage
proportional to the output load current. As the output load current decreases, the CTL pin voltage
decreases.
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Schematic
4
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Schematic
VC
TP12
R34
20 Ω
0.125 W
D6
VC
R13
T1
MMSD4148T1G
9
1:1
10
ETHERNET
POWER
6.49W MAX
1:1
15
1
2
3
4
5
6
7
8
3
2
16
1
5V
D5
TP2
MMSD4148T1G
T2
J2
6
14
1
2
3
4
5
6
7
8
10 Ω
TP11
C11
22 µF
25 V
7
11
J1
SDRN1
8
4
PGND
Q5
IRLML0030TRPBF
J5
2
1
DATA
PORT
C10
R14
3
5
C5
100 µF
10 Ω
C6
100 µF
C7
10 µF
C8
1 µF
5 V/580 mA
GND
C9
0.1 µF
1000 pF
H2019FNLT
L1
LPS4012-103MLB
PGND
R5
3300 pF
C2
C12
22 µF
100 V
R6
75.0 Ω
3300 pF
C13
2.2 µF
100 V
R17
100 kΩ
0.125 W
VDD
C14
0.1 µF
100 V
D8
J6
2
1
SDRN2
C15
100 µF
TP13
LDT0565-50
ES1D-13-F
200 V
FB1
30 Ω
TP15
9
10
1
TP1
PGND
3.3 V
6
8
7
2
75.0 Ω
3_3V
C1
C16
100 µF
C17
10 µF
C18
1 µF
3.3 V/900 mA
GND
C19
0.1 µF
PGND
VDD
PDRN
TP3
D1
C20
330 pF
PGND
Q6
CSD17507Q5A
7,8
5,6,
D2
FDS89161
Q1A
R2
1.0 MΩ
R3
1.0 MΩ
R4
232 kΩ
R7
232 kΩ
4
2
D4
D11
1
3
CS
C28
330 pF
TP4
PGND
MMSD4148T1G
Q3
FDC86244
150 V
R19
GATE
C27
330 pF
R18
10 Ω
TP6
FDS89161
Q1B
D7
4
GATE
7, 8
1,2,3
5, 6
10 Ω
R16
10 Ω
3_3V
TP5
PGND
R21
CS
825 Ω
R20
0
PGND
TP7
C3
1000pF
R22
0.82 Ω
0.125 W
CTL
GAT2
TP8
VB
TP9
D12
D13
R23
10.0k
C21
PGND
R10
1.0 MΩ
VSS
R25
C30
330 pF
FB2
30 Ω
C26
0.1 µF
100 V
D10
SMAJ58A
VSS
AUX INPUT
VDD
R32
AUX
FB3
30 Ω
J4
3.01 kΩ
AUX
D3
68.1 kΩ
C4
1000 pF
ES1D-13-F
200 V
VB
FB4
30 Ω
R1
19
R33
VDD
1
2
R12
69.8 kΩ
26.7 kΩ
15
1
2
3
21
17
18
20
C24
0.1 µF
PGND
3_3V
VSS
VDD1
VDD
T2P
VB
VC
APD
DEN
GATE
CS
GAT2
P1
P2
CTL
FRS
CLS
DT
BLNK
N/C
N/C
N/C
COM
ARTN
RTN
PAD
TPS23785BPWP
R9
10.0 kΩ R15
100 kΩ
TP14
PGND
PGND
Blnk = 100 ns
F = 250 kHz
APD Start = 36 V
Delay = 20 ns
10.0 kΩ
22
4
8
J3
1
2
3
Q4
MMBT3904
59.0k
C23
R26
3_3V
150k
0.022µF
R31
49.9k
VB
D9
BAT54HT1G
C22
4700pF
3
TP10
U1
12
13
14
R35
PGND
34 to 57 VDC
T2P_PU
VSS
4
NC
NC
TP16
5
D14
1
3
C29
330 pF
R30
232 kΩ
2
1
FDS89161
Q2B
2
R29
232 kΩ
10pF
7,8
4
D15
U2
TLV431AIDBV
R27
6.04k
R28
511k
VC
7
5
9
GATE
16
23
24
PGND
CS
6
10
11
PGND
VC
R8
1.0 MΩ
5,6
FDS89161
Q2A
R24
10.0k
C25
1 µF
25 V
R11
137 Ω
Figure 1. TPS23785BEVM-522 Schematic
4
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General Configuration and Description
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5
General Configuration and Description
5.1
Physical Access
Table 2 lists the EVM connector functionality and Table 3 describes the test point availability.
Table 2. Connector Functionality
Connector
Label
J1
PWR+DATA
J2
DATA
J3
T2P
J4
AUX INPUT
J5
5V VOUT
J6
3.3V VOUT
Description
PoE input. Connect to PSE power and data source.
Ethernet data passthrough. Connect to downstream Ethernet device.
Indicated PSE has performed IEEE802.3at type 2 hardware classification.
DC-to-DC converter input bypassing the PoE front end. Connect a 34- to 57-V DC power
supply if there is no J1 connection to power the converter.
5-V regulated output
3.3-V regulated output
Table 3. Test Points
Test Point
Color
Label
TP1
RED
VDD
Description
Input voltage
TP2
RED
5V
TP3
ORANGE
PDRN
Main FET drain voltage
TP4, TP7, TP14
BLACK
PGND
Converter ground
TP5
WHITE
CS
TP6
WHITE
GATE
Main gate voltage
TP8
WHITE
GAT2
Synchronous gate voltage
TP9
WHITE
CTL
TP10
WHITE
T2P_PU
T2P pullup voltage
TP11
ORANGE
SDRN1
5-V synchronous FET source voltage
TP12
RED
VC
TP13
ORANGE
SDRN2
TP15
ORANGE
3.3V
3.3-V regulated output
TP16
BLACK
VSS
PoE input return voltage
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5-V regulated output
Current sense voltage
Control voltage
Converter bias voltage
3.3-V synchronous FET drain voltage
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General Configuration and Description
5.2
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Test Setup
Figure 2 shows the typical test setup for the EVM.
Ethernet
Device
PSE
Ethernet Cable
5V
J1
J5
TPS23785BEVM-522
GND
3.3 V
J6
J4
+
GND
±
DC Supply
(If no PSE)
Figure 2. Typical TPS23785BEVM-522 Test Setup
6
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TPS23785BEVM-522 Performance Data
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6
TPS23785BEVM-522 Performance Data
6.1
Startup
Figure 3 shows the startup response of the TPS23785BEVM-522.
Figure 3. Startup Response to Full Load for a 48-V Input
6.2
Transient Response
Figure 4 and Figure 5 show the transient response of the TPS23785BEVM-522.
Figure 4. Transient Response of 5-V Output from 58 to 580 mA for a 48-V Input
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TPS23785BEVM-522 Performance Data
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Figure 5. Transient Response of 3.3-V Output from 90 to 900 mA for a 48-V Input
8
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6.3
Efficiency
Table 4 shows the efficiency of the TPS23785BEVM-522
Table 4. Efficiency of the TPS23785BEVM-522
Iout 3.3 V
Iout 5 V
Vout 3.3
Vout 5 V
Pout
Vin (PoE)
Vin
(Converter)
Iin
Pin PoE
Pin
Converter
Efficiency
PoE
Efficiency
Converter
1.021
0.601
3.315
4.96
6.365575
48
47.3
0.146
7.008
6.9058
90.8%
92.2%
1.021
0.283
3.315
4.981
4.794238
48
47.4
0.109
5.232
5.1666
91.6%
92.8%
1.02
0
3.315
5.002
3.3813
48
47.4
0.079
3.792
3.7446
89.2%
90.3%
0.465
0.595
3.315
4.949
4.48613
48
47.5
0.103
4.944
4.8925
90.7%
91.7%
0.465
0.281
3.315
4.972
2.938607
48
47.4
0.069
3.312
3.2706
88.7%
89.8%
0.465
0
3.315
4.993
1.541475
48
47.5
0.039
1.872
1.8525
82.3%
83.2%
0
0.592
3.315
4.942
2.925664
48
47.4
0.069
3.312
3.2706
88.3%
89.5%
0
0.281
3.316
4.965
1.395165
48
47.5
0.036
1.728
1.71
80.7%
81.6%
Iout 3.3V
Iout 5V
Vout 3.3
Vout 5V
Pout
Vin (PoE)
Vin
(Converter)
Iin
Pin PoE
Pin
Converter
Efficiency
PoE
Efficiency
Converter
1.026
0.601
3.315
4.953
6.377943
36
35.22
0.199
7.164
7.00878
89.0%
91.0%
1.025
0.287
3.315
4.98
4.827135
36
35.32
0.148
5.328
5.22736
90.6%
92.3%
1.027
0
3.315
5.004
3.404505
36
35.4
0.105
3.78
3.717
90.1%
91.6%
0.466
0.612
3.315
4.941
4.568682
36
35.33
0.141
5.076
4.98153
90.0%
91.7%
0.466
0.286
3.315
4.968
2.965638
36
35.43
0.092
3.312
3.25956
89.5%
91.0%
0.466
0
3.315
4.994
1.54479
36
35.53
0.051
1.836
1.81203
84.1%
85.3%
0
0.616
3.315
4.932
3.038112
36
35.43
0.093
3.348
3.29499
90.7%
92.2%
0
0.281
3.315
4.96
1.39376
36
35.54
0.047
1.692
1.67038
82.4%
83.4%
Iout 3.3V
Iout 5V
Vout 3.3
Vout 5V
Pout
Vin (PoE)
Vin
(Converter)
Iin
Pin PoE
Pin
Converter
Efficiency
PoE
Efficiency
Converter
1.023
0.614
3.315
4.961
6.437299
57
56.4
0.123
7.011
6.9372
91.8%
92.8%
1.024
0.287
3.315
4.982
4.824394
57
56.4
0.093
5.301
5.2452
91.0%
92.0%
1.022
0
3.315
5.002
3.38793
57
56.5
0.067
3.819
3.7855
88.7%
89.5%
0.465
0.63
3.315
4.95
4.659975
57
56.4
0.09
5.13
5.076
90.8%
91.8%
0.466
0.279
3.315
4.974
2.932536
57
56.5
0.058
3.306
3.277
88.7%
89.5%
0.466
0
3.315
4.992
1.54479
57
56.6
0.034
1.938
1.9244
79.7%
80.3%
0
0.635
3.315
4.943
3.138805
57
56.5
0.062
3.534
3.503
88.8%
89.6%
0
0.277
3.315
4.966
1.375582
57
56.6
0.03
1.71
1.698
80.4%
81.0%
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EVM Assembly Drawing and Layout Guidelines
7
EVM Assembly Drawing and Layout Guidelines
7.1
PCB Drawings
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Figure 6 to Figure 11 show component placement and layout of the TPS23785BEVM-522.
Figure 6. Top Side Component Placement
Figure 7. Top Side Routing
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Figure 8. Layer 2 Routing
Figure 9. Layer 3 Routing
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EVM Assembly Drawing and Layout Guidelines
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Figure 10. Bottom Side Routing
Figure 11. Bottom Component Placement
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EVM Assembly Drawing and Layout Guidelines
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7.2
Layout Guidelines
The layout of the PoE front end should follow power and EMI/ESD best-practice guidelines. A basic set of
recommendations include:
• Parts placement must be driven by power flow in a point-to-point manner: RJ-45, Ethernet transformer,
diode bridges, TVS and 0.1-μF capacitor, and TPS23785B converter input bulk capacitor.
• Make all leads as short as possible with wide power traces and paired signal and return.
• No crossovers of signals from one part of the flow to another are allowed.
• Place the TPS23785B over split, local ground planes referenced to VSS for the PoE input and to RTN
for the converter. Whereas the PoE side may operate without a ground plane, the converter side must
have one. Do not place logic ground and power layers under the Ethernet input.
• Use large copper fills and traces on SMT power-dissipating devices, and use wide traces or overlay
copper fills in the power path.
The DC-to-DC converter layout benefits from basic recommendations such as:
• Pair signals to reduce emissions and noise, especially the paths that carry high-current pulses, which
include the power semiconductors and magnetics.
• Minimize trace length of high current, power semiconductors, and magnetic components.
• Where possible, use vertical pairing
• Use the ground plane for the switching currents carefully.
• Keep the high-current and high-voltage switching away from low-level sensing circuits including those
outside the power supply.
7.3
EMI Containment
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Use compact loops for dv/dt and di/dt circuit paths (power loops and gate drives).
Use minimal, yet thermally adequate, copper areas for heat sinking of components tied to switching
nodes (minimize exposed radiating surface).
Use copper ground planes (possible stitching) and top-layer copper floods (surround circuitry with
ground floods).
Use a 4-layer PCB, if economically feasible (for better grounding).
Minimize the amount of copper area associated with input traces (to minimize radiated pickup).
Hide copper associated with switching nodes under shielded magnetics, where possible.
Heat sink the quiet side of components instead of the switching side, where possible (like the output
side of inductor).
Use Bob Smith terminations.
Use LC filter at DC-to-DC input.
Dampen high-frequency ringing on all switching nodes, if present (allow for possible snubbers).
Control rise times with gate-drive resistors and possibly snubbers.
Switching frequency considerations
Observe the polarity dot on inductors (embed noisy end)
Use of ferrite beads on input (allow for possible use of beads or 0-Ω resistors).
Maintain physical separation between input-related circuitry and power circuitry (use ferrite beads as
boundary line).
Balance efficiency versus acceptable noise margin.
Possible use of common-mode inductors
Possible use of integrated RJ-45 jacks (shielded with internal transformer and Bob Smith terminations)
End-product enclosure considerations (shielding)
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Bill of Materials
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Bill of Materials
Table 5. TPS23785BEVM-522 BOM (1)
Designator
Qty
!PCB1
1
Value
Description
Package
Reference
Printed Circuit Board
Manufacturer
Alternate
Part
Number
Alternate
Manufacturer
PWR522
Any
–
–
AVX
Part Number
C1, C2
2
CAP, CERM, 3300pF,
3300pF
100V, ±5%, X7R, 0603
C3, C4
2
1000pF
CAP, CERM, 1000pF,
100V, ±5%, X7R, 0603
0603
06031C102JAT2
A
AVX
C5, C6, C15,
C16
4
100uF
CAP, CERM, 100uF, 6.3V,
±20%, X5R, 1210
1210
C1210C107M9PA
CTU
Kemet
C7, C17
2
10uF
CAP, CERM, 10uF, 10V,
±10%, X5R, 0805
0805
C0805C106K8PA
CTU
Kemet
C8, C18
2
1uF
CAP, CERM, 1uF, 10V,
±10%, X5R, 0603
0603
C0603C105K8PA
CTU
Kemet
C9, C19, C24
3
0.1uF
CAP, CERM, 0.1uF, 50V,
±10%, X7R, 0603
0603
06035C104KAT2
A
AVX
C10
1
1000pF
CAP, CERM, 1000pF, 50V,
±10%, X7R, 0603
0603
C1608X7R1H102
K
TDK
C11
1
22uF
CAP, AL, 22uF, 25V, ±20%,
0.7 ohm, SMD
SMT
Radial C
EEE-FK1E220R
Panasonic
C12
1
22uF
CAP, AL, 22uF, 100V,
±20%, 1.3 ohm, SMD
SMT
Radial F
EEE-FK2A220P
Panasonic
C13
1
2.2uF
CAP, CERM, 2.2uF, 100V,
±10%, X7R, 1210
1210
GRM32ER72A22
5KA35L
MuRata
C14, C26
2
0.1uF
CAP, CERM, 0.1uF, 100V,
±10%, X7R, 0805
0805
C2012X7R2A104
K
TDK
C20
1
330pF
CAP, CERM, 330pF, 100V,
±5%, X7R, 0603
0603
06031C331JAT2
A
AVX
C21
1
10pF
CAP, CERM, 10pF, 50V,
±5%, C0G/NP0, 0603
0603
06035A100JAT2
A
AVX
C22
1
4700pF
CAP, CERM, 4700pF,
100V, ±5%, X7R, 0603
0603
06031C472JAT2
A
AVX
C23
1
0.022u
F
CAP, CERM, 0.022uF, 25V,
±10%, X7R, 0603
0603
C0603C223K3RA
CTU
Kemet
C25
1
1uF
CAP, CERM, 1uF, 25V,
±10%, X5R, 0805
0805
C2012X5R1E105
K
TDK
C27, C28,
C29, C30
4
330pF
CAP, CERM, 330pF, 100V,
±10%, X7R, 0603
0603
06031C331KAT2
A
AVX
–
–
D1, D2, D4,
D11, D12,
D13, D14,
D15
8
0.79V
Diode, Schottky, 100V, 1A,
SMA
SMA
B1100-13-F
Diodes Inc.
Equivalent
Any
D3, D8
2
200V
Diode, Ultrafast, 200V, 1A,
SMA
SMA
ES1D-13-F
Diodes Inc.
D5, D6, D7
3
100V
Diode, Switching, 100V,
0.2A, SOD-123
SOD-123
MMSD4148T1G
ON
Semiconductor
D9
1
30V
Diode, Schottky, 30V, 0.2A,
SOD-323
SOD-323
BAT54HT1G
ON
Semiconductor
D10
1
58V
Diode, TVS, Uni, 58V,
400W, SMA
SMA
SMAJ58A
FB1, FB2,
FB3, FB4
4
30 ohm
1.5A Ferrite Bead, 30 ohm
at 100MHz, SMD
0805
MMZ2012R300A
TDK
J1, J2
2
RJ-45, Right Angle, No
LED, tab up
RJ-45
Jack
1-406541-1
AMP
(1)
14
0603
06031C332JAT2
A
Littelfuse
Unless otherwise noted in the Alternate PartNumber and/or Alternate Manufacturer columns, all parts may be substituted with
equivalents.
TPS23785BEVM-522 Evaluation Module
Copyright © 2014, Texas Instruments Incorporated
SLUUB11 – April 2014
Submit Documentation Feedback
Bill of Materials
www.ti.com
Table 5. TPS23785BEVM-522 BOM (1) (continued)
Package
Reference
Alternate
Part
Number
Alternate
Manufacturer
Sullins
Connector
Solutions
Equivalent
Any
Qty
Value
Description
J3
1
1x3
Header, TH, 100mil, 1x3,
Gold plated, 230 mil above
insulator
PBC03SA
PBC03SAAN
AN
J4, J5, J6
3
Terminal Block, 6A, 3.5mm
Pitch, 2-Pos, TH
7.0x8.2x6.
ED555/2DS
5mm
L1
1
Inductor, Shielded Drum
Core, Ferrite, 10uH, 0.75A,
0.35 ohm, SMD
LPS4012
LPS4012103MLB
Coilcraft
Q1, Q2
2
Dual N-Channel MOSFET
SO-8
FDS89161
Fairchild
Q3
1
150V
MOSFET, N-CH, 150V,
2.3A, SuperSOT-6
Q4
1
0.2V
Transistor, NPN, 40V, 0.2A,
SOT-23
SOT-23
MMBT3904
Q5
1
30V
MOSFET, N-CH, 30V,
5.3A, SOT-23
SOT-23
IRLML0030TRPB
F
International
Rectifier
Q6
1
30V
MOSFET, N-CH, 30V, 65A,
SON 5x6mm
SON
5x6mm
CSD17507Q5A
Texas
Instruments
R1, R9, R23,
R24
4
10.0k
R2, R3, R8,
R10
4
1.0Meg
R4, R7, R29,
R30
4
R5, R6
10uH
Part Number
Manufacturer
Designator
On-Shore
Technology,
Inc.
SuperSOT
FDC86244
-6
Fairchild
Semiconductor
Fairchild
Semiconductor
RES, 10.0k ohm, 1%,
0.1W, 0603
0603
CRCW060310K0
FKEA
Vishay-Dale
RES, 1.0Meg ohm, 5%,
0.1W, 0603
0603
CRCW06031M00
JNEA
Vishay-Dale
232k
RES, 232k ohm, 1%, 0.1W,
0603
0603
CRCW0603232K
FKEA
Vishay-Dale
2
75.0
RES, 75.0 ohm, 1%, 0.1W,
0603
0603
CRCW060375R0
FKEA
Vishay-Dale
R11
1
137
RES, 137 ohm, 1%, 0.1W,
0603
0603
CRCW0603137R
FKEA
Vishay-Dale
R12
1
69.8k
RES, 69.8k ohm, 1%,
0.1W, 0603
0603
CRCW060369K8
FKEA
Vishay-Dale
R13, R16,
R19
3
10
RES, 10 ohm, 5%, 0.1W,
0603
0603
CRCW060310R0
JNEA
Vishay-Dale
R14, R18
2
10
RES, 10 ohm, 5%, 0.125W,
0805
0805
CRCW080510R0
JNEA
Vishay-Dale
R15
1
100k
RES, 100k ohm, 1%, 0.1W,
0603
0603
CRCW0603100K
FKEA
Vishay-Dale
R17
1
100k
RES, 100k ohm, 1%,
0.125W, 0805
0805
CRCW0805100K
FKEA
Vishay-Dale
R20
1
0
RES, 0 ohm, 5%, 0.1W,
0603
0603
ERJ-3GEY0R00V
Panasonic
R21
1
825
RES, 825 ohm, 1%, 0.1W,
0603
0603
CRCW0603825R
FKEA
Vishay-Dale
R22
1
0.82
RES, 0.82 ohm, 1%,
0.125W, 0805
0805
ERJ-6RQFR82V
Panasonic
R25
1
59.0k
RES, 59.0k ohm, 1%,
0.1W, 0603
0603
CRCW060359K0
FKEA
Vishay-Dale
R26
1
150k
RES, 150k ohm, 1%, 0.1W,
0603
0603
CRCW0603150K
FKEA
Vishay-Dale
R27
1
6.04k
RES, 6.04k ohm, 1%,
0.1W, 0603
0603
CRCW06036K04
FKEA
Vishay-Dale
R28
1
511k
RES, 511k ohm, 1%, 0.1W,
0603
0603
CRCW0603511K
FKEA
Vishay-Dale
R31
1
49.9k
RES, 49.9k ohm, 1%,
0.1W, 0603
0603
CRCW060349K9
FKEA
Vishay-Dale
SLUUB11 – April 2014
Submit Documentation Feedback
None
None
None
None
Equivalent
Any
Equivalent
Any
TPS23785BEVM-522 Evaluation Module
Copyright © 2014, Texas Instruments Incorporated
15
Bill of Materials
www.ti.com
Table 5. TPS23785BEVM-522 BOM (1) (continued)
Alternate
Part
Number
Alternate
Manufacturer
Keystone
Equivalent
Any
Keystone5
5013
013
Keystone
Equivalent
Any
Test Point, TH,
Multipurpose, Black
Keystone5
5011
011
Keystone
Equivalent
Any
Test Point, TH,
Multipurpose, White
Keystone5
5012
012
Keystone
Equivalent
Any
Package
Reference
Part Number
Manufacturer
RES, 68.1k ohm, 1%,
0.1W, 0603
0603
CRCW060368K1
FKEA
Vishay-Dale
RES, 26.7k ohm, 1%,
0.125W, 0805
0805
CRCW080526K7
FKEA
Vishay-Dale
RES, 20 ohm, 5%, 0.125W,
0805
0805
CRCW080520R0
JNEA
Vishay-Dale
3.01k
RES, 3.01k ohm, 1%,
0.1W, 0603
0603
CRCW06033K01
FKEA
Vishay-Dale
1
350uH
Transformer, 350uH, SMT
358x236x5
H2019FNLT
00mil
Pulse
Engineering
T2
1
240uH
Driver Transformer, 240uH,
SMT
13.1x13x1
LDT0565-50
4mm
Linkcom
Manufacturing
Co.
TP1, TP2,
TP12
3
Red
Test Point, TH,
Multipurpose, Red
Keystone5
5010
010
TP3, TP11,
TP13, TP15
4
Orange
Test Point, TH,
Multipurpose, Orange
TP4, TP7,
TP14, TP16
4
Black
TP5, TP6,
TP8, TP9,
TP10
5
White
U1
1
High-Power, High-Efficiency
PWP0024
PoE PD and DC-to-DC
TPS23785BPWP
B
Controller, PWP0024B
Texas
Instruments
None
U2
1
LOW-VOLTAGE
ADJUSTABLE PRECISION
SHUNT REGULATOR,
DBV0005A
Texas
Instruments
None
FID1, FID2,
FID3
0
Fiducial mark. There is
nothing to buy or mount.
Designator
Qty
Value
R32
1
68.1k
R33
1
26.7k
R34
1
20
R35
1
T1
16
Description
DBV0005
A
Fiducial
TLV431AIDBV
N/A
TPS23785BEVM-522 Evaluation Module
Copyright © 2014, Texas Instruments Incorporated
N/A
SLUUB11 – April 2014
Submit Documentation Feedback
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1.
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2.
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