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TPS2400
SLUS599B – JUNE 2004 – REVISED OCTOBER 2015
TPS2400 Overvoltage Protection Controller
1 Features
3 Description
•
•
•
•
•
The TPS2400 overvoltage protection controller is
used with an external N-channel MOSFET to isolate
sensitive electronics from destructive voltage spikes
and surges. It is specifically designed to prevent large
voltage transients associated with automotive
environments (load dump) from damaging sensitive
circuitry. When potentially damaging voltage levels
are detected by the TPS2400 the supply is
disconnected from the load before any damage can
occur.
1
•
•
•
•
Up to 100-V Overvoltage Protection
6.9-V Overvoltage Shutdown Threshold
3-V Undervoltage Shutdown Threshold
Overvoltage Turnoff Time Less than 1 µs
External N-Channel MOSFET Driven by Internal
Charge Pump
1-mA Maximum Static Supply Current
5-Pin SOT−23 Package
−40°C to 85°C Ambient Temperature Range
2.5-kV Human-Body-Model, 500-V CDM
Electrostatic Discharge Protection
Internal circuitry includes a trimmed band-gap
reference, oscillator, Zener diode, charge pump,
comparator, and control logic. The TPS2400 device is
designed for use with an external N-channel
MOSFET, which are readily available in a wide
variety of voltages.
2 Applications
•
•
•
•
•
•
Cellular Phones
PDAs
Portable PCs
Media Players
Digital Cameras
GPS
Device Information(1)
PART NUMBER
TPS2400
PACKAGE
SOT-23 (5)
BODY SIZE (NOM)
2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Application Diagram
IIN
FDC3616N
VIN
IOUT
VOUT
5
VIN
GATE 4
TPS2400
GND
2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS2400
SLUS599B – JUNE 2004 – REVISED OCTOBER 2015
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Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
6
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 8
Detailed Description ............................................ 10
8.1 Overview ................................................................. 10
8.2 Functional Block Diagram ....................................... 10
8.3 Feature Description................................................. 10
8.4 Device Functional Modes........................................ 11
9
Application and Implementation ........................ 12
9.1 Application Information............................................ 12
9.2 Typical Applications ............................................... 12
10 Power Supply Recommendations ..................... 15
11 Layout................................................................... 16
11.1 Layout Guidelines ................................................. 16
11.2 Layout Example .................................................... 16
12 Device and Documentation Support ................. 17
12.1
12.2
12.3
12.4
12.5
Documentation Support .......................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
17
13 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (August 2008) to Revision B
•
2
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
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5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
VIN
GATE
5
4
1
2
N/C
GND
3
N/C
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
GATE
4
O
Output gate drive for an external N-channel MOSFET
GND
2
—
Ground
NC
1, 3
—
No internal connection
VIN
5
I
Input voltage
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
VVIN
Input voltage
VOUT
Output voltage
(1)
MIN
MAX
UNIT
VIN
–0.3
110
V
GATE (continuous)
–0.3
22
GATE (transient, < 10 µs, Duty Cycle < 0.1%)
–0.3
25
Continuous total power dissipation
V
See Thermal Information
TJ
Operating junction temperature
–40
125
°C
TA
Operating free-air temperature
–40
85
°C
Tstg
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±2500
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Supply voltage at VIN
3.1
6.8
V
Operating junction temperature
–40
125
°C
6.4 Thermal Information
TPS2400
THERMAL METRIC
(1)
DBV (SOT-23)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
219.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
126.2
°C/W
RθJB
Junction-to-board thermal resistance
51.2
°C/W
ψJT
Junction-to-top characterization parameter
15.9
°C/W
ψJB
Junction-to-board characterization parameter
50.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VI(VIN) = 3.1 V
65
110
VI(VIN) = 5 V
95
180
VI(VIN) = 6.5 V
135
220
VI(VIN) = 100 V
550
1000
2.9
3
3.1
V
85
100
115
mV
6.7
6.9
7.1
V
135
150
165
mV
INPUT
II(VIN)
Input supply current, VIN
UVLO(upper)
Undervoltage lockout upper
threshold
UVLO(hyst)
Undervoltage lockout hysteresis
OVP(upper)
Overvoltage protection upper
threshold
OVP(hyst)
Overvoltage protection hysteresis
VI(VIN) rising
VI(VIN) rising
µA
GATE DRIVE
IOSOURCE(gate) Gate sourcing current
IOSINK(gate)
Gate sinking current (1)
VI(VIN) = 3.1 V, VO(gate) = 7 V
3
10
VI(VIN) = 5 V, VO(gate) = 10 V
3
10
VI(VIN) = 7.2 V, VO(gate) = 15 V
350
485
600
VI(VIN) = 3.1 V, IOSOURCE(gate) = 1 µA
10
12
VI(VIN) = 5 V, IOSOURCE(gate) = 1.5 µA
16
19
VI(VIN) = 6.5 V, IOSOURCE(gate) = 1.5 µA
16
20
VOH(gate)
Gate output high voltage
VOHMAX(gate)
Gate output high maximum voltage
IOSOURCE(gate) = 0 µA
VOL(gate)
Gate output low voltage
VI(VIN) = 7.2 V, IOSINK(gate) = 50 mA
VI(VIN) stepped from 0 V to 5 V, CLOAD = 1 nF
0.1
0.6
TON(prop)
Gate turnon propogation delay,
(50% VI(vin) to VO(gate) = 1 V,
RLOAD = 10 MΩ
CLOAD = 10 nF
0.9
3
Gate turnon rise time,
(VO(gate) = 1 V to 90%VO(gate),
RLOAD = 10 MΩ)
VI(VIN) stepped from 0 V to 5 V, CLOAD = 1 nF
1.5
6
TON(rise)
CLOAD = 10 nF
15
55
TOFF
Turnoff time, (50% VI(VIN) step to
VO(GATE) = 6.9 V, RLOAD = 10 MΩ)
VI(VIN) stepped from 6 V to 8 V, CLOAD = 1 nF
5
0.25
CLOAD = 10 nF
5
0.5
(1)
µA
mA
V
20
V
1
V
ms
ms
µs
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
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6.6 Typical Characteristics
160
IIN(VIN) − Input Supply Current − µA
800
VIN is within the
GATE Enable Range
VVIN > VOVP
VIN= 6.5 V
IIN(VIN) − Input Supply Current − µA
180
140
120
VIN= 5.0 V
100
VIN= 3.1 V
80
60
40
VIN= 75 V
600
VIN= 50 V
500
VIN= 25 V
400
VIN= 10 V
300
200
100
20
0
−50
0
50
100
0
−50
150
0
TJ − Junction Temperature − °C
8
150
VIN = 5 V
7
IGATE − Gate Sourcing Current − µA
IGATE − Gate Sourcing Current − µA
TJ = 125°C
VIN = 3.1 V
7
TJ = 25°C
6
5
TJ = −40°C
4
3
2
TJ = 25°C
6
TJ = −40°C
5
4
3
2
0
5
10
VGATE − Gate Voltage − V
15
Figure 3. Gate Sourcing Current vs Gate Voltage
0
5
20
VGATE= 15 V
VO(GATE) − Gate Output Voltage − V
500
450
400
350
20
−40°C ≤ TJ ≤ 125°C
18
550
10
15
VGATE − Gate Voltage − V
Figure 4. Gate Sourcing Current vs Gate Voltage
600
IOSINKGATE) − Gate Sinking Current − mA
100
Figure 2. Input Supply current vs Junction Temperature
8
TJ = 125°C
50
TJ − Junction Temperature − °C
Figure 1. Input Supply current vs Junction Temperature
16
14
12
10
8
6
4
2
300
−50
0
0
50
100
2
150
TJ − Junction Temperature − °C
3
4
5
6
7
8
VVIN − Input Supply Voltage − V
Figure 5. Gate Sinking Current vs Junction Temperature
6
VIN= 100 V
700
Figure 6. Gate Output Voltage vs Input Supply Voltage
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Typical Characteristics (continued)
600
700
VIN
Step 3.3 V to 8 V
tOFF − Turn-Off Time − ns
tOFF − Turn-Off Time − ns
500
400
300
VIN
Step 5 V to 8 V
200
100
0
−50
VIN
Step 3.3 V to 8 V
600
VIN
Step 6 V to 8 V
500
400
300
200
VIN
Step 6 V to 8 V
100
CLOAD = 1 nF
0
VIN
Step 5 V to 8 V
50
100
0
−50
150
TJ − Junction Temperature − °C
CLOAD = 10 nF
0
50
100
150
TJ − Junction Temperature − °C
Figure 7. Turnoff Time to VGATE = 6.9 V vs Junction
Temperature
Figure 8. Turnoff Time to VGATE = 6.9 V vs Junction
Temperature
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7 Parameter Measurement Information
RLOAD = 50 Ω
BW = 20 MHz
VIN
(1 V/div)
VOUT
(1 V/div)
t − Time − 200 µs/div
Figure 9. Output Turnon Response
VIN
VOUT
S1
Q1
FDC3616N
5
VIN
+
U1
TPS2400
5V
VIN1
GATE
50 Ω
RLOAD
4
GND
VGATE
2
Figure 10. Output Turnon Response Test Circuit
8
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Parameter Measurement Information (continued)
RLOAD = 50Ω
BW = 20 MHz
VIN
(2 V/div)
VO
VOUT
(2 V/div)
(2 V/div)
VG
VGATE
VIN
VGATE
(5 V/div)
t − Time − 40 ns/div
Figure 11. Output Turnoff Response
VIN
VOUT
D1
1N5818
Q1
FDC3616N
S1
+
VIN1
5V
+
VIN2
10 V
5
U1
TPS2400
50 Ω
RLOAD
4
2
VGATE
Figure 12. Output Turnoff Response Test Circuit
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8 Detailed Description
8.1 Overview
The TPS2400 device is used in applications that must protect the load from overvoltage event. Benefits include
fast response time and survival during extended overvoltage events.
8.2 Functional Block Diagram
VIN
5
High= Closed
8V
Internal Rail
+
8V
Enable
Charge Pump
UVLO
5 µA
OVLO
1.15 V
4
GATE
+
GND
2
18 V
8.3 Feature Description
8.3.1 Undervoltage and Overvoltage Comparators and Logic
When the comparators detect that VCC is within the operating window, the GATE output is driven high to turn on
the external N-channel MOSFET. When VCC goes above the set overvoltage level, or below the set undervoltage
level, the GATE output is driven low.
8.3.2 Charge Pump
An internal charge pump supplies power to the GATE drive circuit and provides the necessary voltage to pull the
gate of the MOSFET above the source.
8.3.3 Zener Diodes
Limit internal power rails to 8 V and GATE output to 18 V.
8.3.4 Shut-Off MOSFET
When an undervoltage or overvoltage event occurs, this MOSFET is turned on to pulldown the gate of the
external N-channel MOSFET, thus isolating the load from the incoming transient.
10
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Feature Description (continued)
IIN
FDC3616N
IOUT
VIN
VOUT
5
VIN
GATE 4
TPS2400
GND
2
Figure 13. Application Diagram
8.4 Device Functional Modes
8.4.1 Overvoltage Protection
An overvoltage condition is commonly created in these situations:
• Unplugging a wall adapter from an AC outlet. Energy stored in the transformer magnetizing inductance is
released and spikes the output voltage.
• Powering an appliance with the wrong voltage adapter (user error).
• Automotive load dump due to ignition, power windows, or starter motor (for example).
• An AC power-line transient.
• Power switch contact bounce (causes power supply/distribution inductive kick), (See Figure 14).
Many electronic appliances use a transient voltage suppressor (TVS) for overvoltage protection as shown in
Figure 14. The TVS is typically a metal-oxide varister (MOV) or Transzorb. The former is a nonlinear resistor with
a soft turnon characteristic whereas the latter is a large junction Zener diode with a very sharp turnon
characteristic. These devices have high pulse-power capability and pico-second response time. A TVS clamps
the load voltage to a safe level so the load operates uninterrupted in the presence of power supply outputvoltage spikes. But in the event of a voltage surge, fuse F2 blows and must be replaced to restore operation.
LS
+
F1
RS
S1
VS
F2
TVS
Power Supply
LOAD
Appliance
Figure 14. Load Protection Using Transient Voltage Suppressor Clamps
The TPS2400 circuit in Figure 15 protects the load from an overvoltage, not by clamping the load voltage like a
TVS, but by disconnecting the load from the power supply. The circuit responds to an overvoltage in less than 1
µs and rides out a voltage surge without blowing fuse F2. The voltage surge can be of indefinite duration.
The load can see a voltage spike of up to 1 µs, the amount of time it takes the TPS2400 to disconnect the load
from the power supply. A low-power Zener diode D2 can be used to clamp the load voltage to a safe level. In
most cases, diode D2 is not necessary because the load bypass capacitor (not shown) forms a low-pass filter
with resistor RS and inductor LS to significantly attenuate the spike.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPS2400 device provides application flexibility and can be used in many types of systems for load
protection.
9.2 Typical Applications
9.2.1 TPS2400 Application
When the TPS2400 disconnects the load from the power supply, the power-supply output-voltage spikes as the
stored energy in inductor LS is released. A Zener diode D1 or a small ceramic capacitor can be used to keep the
voltage spike at a safe level.
LS
RS
F1
S1
F2
Q1
5
+
U1
TPS2400
VS
D1
(Optional)
4
LOAD
D2
(Optional)
2
Power Supply
Appliance
Figure 15. TPS2400 Application Block Diagram
9.2.1.1 Design Requirements
Table 1 shows the parameters for this design example.
Table 1. Design Parameters
DESIGN PARAMETERS
EXAMPLE VALUE
MOSFET Input Capacitance, CG
2 nF
Load Capacitance, CL
100 uF
9.2.1.2 Detailed Design Procedure
9.2.1.2.1 Controlling the Load Inrush-Current
Figure 16 is a simplified representation of an appliance with a plug-in power supply (for example, wall adapter).
When power is first applied to the load in Figure 16, the large filter capacitor CLOAD acts like a short circuit,
producing an immediate inrush-current that is limited by the power-supply output resistance and inductance, RS
and LS, respectively. This current can be several orders of magnitude greater than the steady-state load current.
The large inrush current can damage power connectors P1 and J1 and power switch S1, and stress components.
Increasing the power-supply output resistance and inductance lowers the inrush current. However, the former
increases system power-dissipation and the latter decreases connector and switch reliability by encouraging the
contacts to arc when they bounce.
12
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LS
+
RS
F1
J1
P1
S1
F2
VS
CLOAD
Power Supply
LOAD
Appliance
Figure 16. Power-Supply Output Resistance and Inductance Circuit Model
The TPS2400 circuit in Figure 17 limits the inrush current without these draw backs. The TPS2400 device
charges the transistor Q1 gate capacitance CG with a 5-µA source when Q1 is commanded to turn on. Transistor
Q1 is wired as a source follower so the gate-voltage slew rate and the load-voltage slew rate are identical and
equal to
¶VL 5 mA
=
¶t
CG
(1)
The corresponding inrush current is:
IINRUSH » CL ´
¶VL æ CL ö
=ç
÷ ´ 5 mA
¶t
è CG ø
(2)
When solving Equation 1 using CG = 2 nF, we get 2500 V/s. Then we can use Equation 2 to approximate the
inrush current of 250 mA.
An external capacitor and a series 1-kΩ resistor can be connected to the gate of Q1 and ground to reduce inrush
current further. In this case, the parameter CG in Equation 1 and Equation 2 is the sum of the internal and
external FET gate capacitance. The 1-kΩ resistor decouples the external gate capacitor, so the TPS2400 device
can rapidly turn off transistor Q1 in response to an overvoltage condition.
LS
RS
F1
J1
P1
S1
Q1
F2
5
U1
TPS2400
+
D1
(Optional)
4
C LOAD
LOAD
2
Power Supply
Appliance
Figure 17. Turnon Voltage Slew Rate Control Using the TPS2400
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9.2.1.3 Application Curve
Figure 18. Circuit Start-Up With VIN = 5 V
9.2.2 High-Side Switch Overvoltage Protector That Can Drive a 12−V Load
Detailed information for the circuit shown in Figure 19 can be found in the application note, Overvoltage Protector
for High-Loads (SLVA163).
VIN
R1
Q1
+
−
Q2
Load
R2
5
U1
4
TPS2400
2
Figure 19. High-Side Switch Overvoltage Protector That Can Drive a 12−V Load
14
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9.2.3 Low−Side Switch Overvoltage Protector That Can Drive a 12−V Load
Detailed information for the circuit shown in Figure 20 can be found in the application note, Overvoltage Protector
for High-Loads (SLVA163).
R1
VIN
+
−
Q2
Load
R2
5
U1
R3
4
TPS2400
D1
Q1
C1
2
Figure 20. Low−Side Switch Overvoltage Protector That Can Drive a 12−V Load
10 Power Supply Recommendations
The TPS2400 device is designed to operate from 3.3-V to 5-V input supplies. VIN is 100-V tolerant, but keep
within the recommended steady-state operating range of 3.1 V to 6.8 V.
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11 Layout
11.1 Layout Guidelines
Parts placement must be driven by power flow in a point-to-point manner from input to output. Avoid leakage
paths from GATE to GND, which might load down the small GATE output current.
11.2 Layout Example
Figure 21. Suggested Layout
16
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
Overvoltage Protector for High−Voltage Loads, SLVA163.
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS2400DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BIJ
TPS2400DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BIJ
TPS2400DBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BIJ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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