TPS2560, TPS2561
SLVS930C – DECEMBER 2009 – REVISED OCTOBER 2020
TPS256x Dual Channel Precision Adjustable Current-limited Power Switches
1 Features
3 Description
•
•
•
•
•
•
•
•
•
•
•
•
The TPS2560 and TPS2561 (TPS256x) are dualchannel power-distribution switches intended for
applications where precision current limiting is
required or heavy capacitive loads and short
circuits are encountered. These devices offer
a programmable current-limit threshold between
250 mA and 2.8 A (typ) per channel through an
external resistor. The power-switch rise and fall times
are controlled to minimize current surges during turn
on and off.
Two separate current limiting channels
Meets USB current-limiting requirements
Adjustable current limit: 250 mA to 2.8 A (typ)
± 7.5% current-limit accuracy at 2.8 A
Fast overcurrent response: 3.5 μs (typ)
Two 44-mΩ high-side MOSFETs
Operating range: 2.5 V to 6.5 V
2-μA maximum standby supply current
Built-in soft-start
15-kV, 8-kV system-level ESD capable
UL listed: file no. E169910
CB and Nemko certified
Each channel of the TPS256x devices limit the
output current to a safe level by switching into a
constant-current mode when the output load exceeds
the current-limit threshold. The FAULTx logic output
for each channel independently asserts low during
overcurrent and overtemperature conditions.
2 Applications
•
•
•
•
USB ports, hubs
Digital TVs
Set-top boxes
VOIP phones
Device Information(1)
PART NUMBER
TPS2560, TPS2561
(1)
PACKAGE
VSON (10)
BODY SIZE (NOM)
3.00 mm × 3.00 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
TPS2560/61
VIN = 5V
2x RFAULT
100 kΩ
Faultx Signals
Control Signals
0.1 uF
IN
IN
VOUT1
OUT1
OUT2
ILIM
FAULT 1
FAULT 2 GND
EN1
EN2
Thermal Pad
VOUT2
24.9kΩ
2x 150 µF
Typical Application Diagram
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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SLVS930C – DECEMBER 2009 – REVISED OCTOBER 2020
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings........................................ 4
7.2 ESD Ratings............................................................... 4
7.3 ESD Ratings: Surge....................................................4
7.4 Recommended Operating Conditions.........................4
7.5 Thermal Information....................................................5
7.6 Electrical Characteristics.............................................5
7.7 Dissipation Ratings..................................................... 6
7.8 Typical Characteristics................................................ 7
8 Parameter Measurement Information............................ 9
9 Detailed Description......................................................10
9.1 Overview................................................................... 10
9.2 Functional Block Diagram......................................... 10
9.3 Feature Description...................................................10
9.4 Device Functional Modes..........................................11
10 Power Supply Recommendations..............................18
10.1 Self-Powered and Bus-Powered Hubs................... 18
10.2 Low-Power Bus-Powered and High-Power
Bus-Powered Functions.............................................. 18
11 Layout........................................................................... 19
11.1 Layout Guidelines................................................... 19
11.2 Layout Example...................................................... 20
12 Device and Documentation Support..........................21
12.1 Receiving Notification of Documentation Updates..21
12.2 Support Resources................................................. 21
12.3 Trademarks............................................................. 21
12.4 Electrostatic Discharge Caution..............................21
12.5 Glossary..................................................................21
13 Mechanical, Packaging, and Orderable
Information.................................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (December 2015) to Revision C (October 2020)
Page
• Updated the numbering format for tables, figures and cross-references throughout the document...................1
• Added OUTx parameter to Absolute Maximum Ratings table ........................................................................... 4
Changes from Revision A (February 2012) to Revision B (December 2015)
Page
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section................... 1
Changes from Revision * (December 2009) to Revision A (February 2012)
Page
• Changed VENx to V ENx in Recommended Operating Conditions....................................................................... 4
• Changed V ENx to VENx in Recommended Operating Conditions....................................................................... 4
2
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5 Device Comparison Table
6 Pin Configuration and Functions
GND
IN
IN
EN1
EN2
1
2
3
4
5
PAD
10
9
8
7
6
FAULT1
OUT1
OUT2
ILIM
FAULT2
DRC Package, 10-Pin VSON, Top View
Table 6-1. Pin Functions
PIN
NAME
I/O
DESCRIPTION
TPS2560
TPS2561
EN1
4
—
I
Enable input, logic low turns on channel one power switch.
EN1
—
4
I
Enable input, logic high turns on channel one power switch.
EN2
5
—
I
Enable input, logic low turns on channel two power switch.
EN2
—
5
I
Enable input, logic high turns on channel two power switch.
GND
1
1
—
Ground connection; connect externally to the thermal pad.
IN
2, 3
2, 3
I
Input voltage; connect a 0.1 μF or greater ceramic capacitor from IN to GND as
close to the IC as possible.
FAULT1
10
10
O
Active-low open-drain output, asserted during overcurrent or overtemperature
condition on channel one.
FAULT2
6
6
O
Active-low open-drain output, asserted during overcurrent or overtemperature
condition on channel two.
OUT1
9
9
O
Power-switch output for channel one.
OUT2
8
8
O
Power-switch output for channel two.
ILIM
7
7
O
External resistor used to set current-limit threshold;
recommended 20 kΩ ≤ RILIM ≤ 187 kΩ.
PAD
PAD
—
Internally connected to GND; used to heat-sink the part to the circuit board traces.
Connect the thermal pad to GND pin externally.
Thermal pad
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1) (2)
MIN
MAX
UNIT
Voltage on IN, ENx or ENx, ILIM, FAULTx
–0.3
7
V
OUTx
–0.8
7
V
–7
7
V
Voltage from IN to OUTx
Continuous output current
Continuous total power dissipation
Internally limited
–
See Dissipation Ratings
–
Continuous FAULTx sink current
25
ILIM source current
mA
Internally limited
–
OTSD2(3)
TJ
Maximum junction temperature
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
the Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
Voltages are referenced to GND unless otherwise noted.
Ambient over temperature shutdown threshold.
(2)
(3)
–40
°C
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 ESD Ratings: Surge
VALUE
V(ESD)
(1)
Electrostatic
discharge
IEC 61000-4-2 contact discharge(1)
±8000
IEC 61000-4-2 air-gap discharge(1)
±15000
UNIT
V
Surges per EN61000-4-2. 1999 applied to output terminals of EVM. These are passing test levels, not failure threshold.
7.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
4
NOM
MAX
UNIT
VIN
Input voltage
2.5
6.5
V
V ENx
VENx
TPS2560 enable voltage
0
6.5
V
TPS2561 enable voltage
0
6.5
V
VIH
High-level input voltage on ENx or ENx
VIL
Low-level input voltage on ENx or ENx
IOUTx
Continuous output current per channel
0
2.5
A
Continuous FAULTx sink current
0
10
mA
20
187
kΩ
–40
125
°C
RILIM
Recommended resistor limit
TJ
Operating junction temperature
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1.1
V
0.66
V
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7.5 Thermal Information
TPS256x
THERMAL
METRIC(1)
UNIT
DRC (VSON)
10 PINS
RθJA
Junction-to-ambient thermal resistance
47.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
66.2
°C/W
RθJB
Junction-to-board thermal resistance
22.4
°C/W
ψJT
Junction-to-top characterization parameter
1.6
°C/W
ψJB
Junction-to-board characterization parameter
22.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
4.9
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.6 Electrical Characteristics
over recommended operating conditions, V/ENx = 0 V, or VENx = VIN (unless otherwise noted)
TEST CONDITIONS(1)
PARAMETER
MIN
TYP
MAX
44
50
UNIT
POWER SWITCH
TJ = 25 °C
rDS(on)
Static drain-source on-state resistance per
channel, IN to OUTx
tr
Rise time, output
CLx = 1 μF, RLx = 100 Ω
(see Figure 8-1)
VIN = 6.5 V
2
3
4
VIN = 2.5 V
1
2
3
tf
Fall time, output
CLx = 1 μF, RLx = 100 Ω
(see Figure 8-1)
VIN = 6.5 V
0.6
0.8
1.0
VIN = 2.5 V
0.4
0.6
0.8
–40 °C ≤ TJ ≤ 125 °C
70
mΩ
ms
ms
ENABLE INPUT, EN OR EN
Enable pin turn on/off threshold
0.66
Hysteresis
IEN
Input current
ton
Turnon time
toff
Turnoff time
1.1
55(2)
VENx = 0 V or 6.5 V, V/ENx = 0 V or 6.5 V
–0.5
CLx = 1 μF, RLx = 100 Ω, (see Figure 8-1)
V
mV
0.5
μA
9
ms
6
ms
CURRENT LIMIT
IOS
tIOS
Current-limit threshold per channel (Maximum
DC output current IOUTx delivered to load) and
Short-circuit current, OUTx connected to GND
Response time to short circuit
RILIM = 20 kΩ
2590
2800
3005
RILIM = 61.9 kΩ
800
900
1005
RILIM = 100 kΩ
470
560
645
VIN = 5.0 V, (see Figure 8-2)
3.5(2)
mA
μs
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7.6 Electrical Characteristics (continued)
over recommended operating conditions, V/ENx = 0 V, or VENx = VIN (unless otherwise noted)
TEST CONDITIONS(1)
PARAMETER
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
IIN_off
Supply current, low-level output
VIN = 6.5 V, no load on OUTx, V ENx = 6.5 V or VENx = 0 V
IIN_on
Supply current, high-level output
VIN = 6.5 V, no load on OUT
IREV
Reverse leakage current
VOUTx = 6.5 V, VIN = 0 V
0.1
2.0
μA
RILIM = 20 kΩ
100
125
μA
RILIM = 100 kΩ
85
110
μA
0.01
1.0
μA
2.45
TJ = 25°C
UNDERVOLTAGE LOCKOUT
UVLO
Low-level input voltage, IN
VIN rising
2.35
Hysteresis, IN
TJ = 25°C
35
V
mV
FAULTx FLAG
VOL
Output low voltage, FAULTx
IFAULTx = 1 mA
Off-state leakage
VFAULTx = 6.5 V
FAULTx deglitch
FAULTx assertion or de-assertion due to overcurrent
condition
6
9
180
mV
1
μA
13
ms
THERMAL SHUTDOWN
OTSD2
Thermal shutdown threshold
155
OTSD
Thermal shutdown threshold in current-limit
135
(2)
°C
20(2)
Hysteresis
(1)
°C
°C
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
These parameters are provided for reference only, and do not constitute part of TI's published specifications for purposes of TI's
product warranty.
7.7 Dissipation Ratings
(1)
(2)
6
BOARD
PACKAGE
THERMAL
RESISTANCE(2)
RθJA
THERMAL
RESISTANCE
RθJC
TA ≤ 25°C
POWER RATING
High-K(1)
DRC
41.6 °C/W
10.7 °C/W
2403 mW
The JEDEC high-K (2s2p) board used to derive this data was a 3-in × 3-in, multilayer board with 1-ounce internal power and ground
planes and 2-ounce copper traces on top and bottom of the board.
Mounting per the PowerPADTM Thermally Enhanced Package application report.
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7.8 Typical Characteristics
VOUT1
5 V/div
VOUT1
5 V/div
VOUT2
5 V/div
VOUT2
5 V/div
VEN1_bar
VEN1_bar
VEN1_bar = VEN2_bar
5 V/div
5 V/div
VEN1_bar = VEN2_bar
IIN
2 A/div
IIN
2 A/div
t - Time - 2 ms/div
t - Time - 2 ms/div
Figure 7-2. Turn-Off Delay and Fall Time
Figure 7-1. Turn-On Delay and Rise Time
VOUT1
5 V/div
VOUT1
5 V/div
VOUT2
5 V/div
VOUT2
5 V/div
FAULT2_bar
5 V/div
FAULT2_bar
5 V/div
IIN
2 A/div
IIN
2 A/div
t - Time - 20 ms/div
t - Time - 20 ms/div
Figure 7-3. Full-Load to Short-Circuit Transient
Response
Figure 7-4. Short-Circuit to Full-Load Recovery
Response
700
2.335
IIN - Supply Current, Output Disabled - nA
UVLO - Undervoltage Lockout - V
2.33
2.325
UVLO Rising
2.32
2.315
2.31
2.305
UVLO Falling
2.3
2.295
2.29
-50
0
50
TJ - Junction Temperature - °C
100
150
Figure 7-5. UVLO – Undervoltage Lockout – V
600
500
400
VIN = 6.5 V
300
200
VIN = 2.5 V
100
0
-100
-50
0
50
TJ - Junction Temperature - °C
100
150
Figure 7-6. IIN – Supply Current, Output Disabled –
nA
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120
120
VIN = 6.5 V
80
VIN = 3.3 V
VIN = 2.5 V
60
40
RILIM = 20 kΩ
20
0
-50
0
50
TJ - Junction Temperature - °C
100
100
90
80
TJ = 25°C
TJ = -40°C
70
2
3
4
5
Input Voltage - V
6
7
Figure 7-8. IIN – Supply Current, Output Enabled –
µA
70
0.6
60
IDS - Static Drain-Source Current - A
rDS(on) - Static Drain-Source On-State Resistance - mW
110
60
150
Figure 7-7. IIN – Supply Current, Output Enabled –
µA
50
40
30
20
0.5
TA = -40°C
0.4
TA = 25°C
TA = 125°C
0.3
0.2
RILIM = 100 kW
0.1
10
0
-50
RILIM = 20kΩ
TJ = 125°C
100
IIN Supply Current vs. VIN Enabled - μA
IIN - Supply Current, Output Enabled - mA
VIN = 5 V
0
0
50
TJ - Junction Temperature - °C
100
0
150
50
100
VIN - VOUT - mV/div
150
200
Figure 7-10. Switch Current vs Drain-Source
Voltage Across Switch
Figure 7-9. MOSFET rDS(on) vs Junction
Temperature
3.0
IDS - Static Drain-Source Current - A
2.5
TJ = -40°C
2.0
TJ = 25°C
1.5
1.0
TJ = 125°C
RILIM = 20kΩ
0.5
0
0
50
100
VIN-VOUT - mV
150
200
Figure 7-11. Switch Current vs Drain-Source Voltage Across Switch
8
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8 Parameter Measurement Information
OUTx
tr
CLx
RLx
VOUTx
tf
90%
90%
10%
10%
TEST CIRCUIT
VENx
50%
50%
VENx
ton
toff
50%
50%
toff
ton
90%
90%
VOUTx
VOUTx
10%
10%
VOLTAGE WAVEFORMS
Figure 8-1. Test Circuit and Voltage Waveforms
IOS
IOUTx
tIOS
Figure 8-2. Response Time to Short Circuit Waveform
Decreasing
Load Resistance
VOUTx
Decreasing
Load Resistance
IOUTx
IOS
Figure 8-3. Output Voltage vs Current-Limit Threshold
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9 Detailed Description
9.1 Overview
The TPS256x is a dual-channel, current-limited power-distribution switch using N-channel MOSFETs for
applications where short circuits or heavy capacitive loads will be encountered. This device allows the user
to program the current-limit threshold between 250 mA and 2.8 A (typ) per channel via an external resistor.
This device incorporates an internal charge pump and gate drive circuitry necessary to drive the N-channel
MOSFETs. The charge pump supplies power to the driver circuit for each channel and provides the necessary
voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low
as 2.5 V and requires little supply current. The driver controls the gate voltage of the power switch. The driver
incorporates circuitry that controls the rise and fall times of the output voltage to limit large current and voltage
surges and provides built-in soft-start functionality. Each channel of the TPS256x limits the output current to the
programmed current-limit threshold IOS during an overcurrent or short-circuit event by reducing the charge pump
voltage driving the N-channel MOSFET and operating it in the linear range of operation. The result of limiting
the output current to IOS reduces the output voltage at OUTx because the N-channel MOSFET is no longer fully
enhanced.
9.2 Functional Block Diagram
Current
Sense
CS
IN
OUT1
FAULT1
9-ms Deglitch
Thermal
Sense
Charge
Pump
EN1
EN2
Current
Limit
Driver
UVLO
ILIM
FAULT2
Thermal
Sense
9-ms Deglitch
GND
CS
OUT2
Current
Sense
9.3 Feature Description
9.3.1 Overcurrent Conditions
The TPS256x responds to overcurrent conditions by limiting the output current per channel to IOS. When an
overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage
accordingly. Two possible overload conditions can occur.
The first condition is when a short circuit or partial short circuit is present when the device is powered-up or
enabled. The output voltage is held near zero potential with respect to ground and the TPS256x ramps the
output current to IOS. The TPS256x devices will limit the current to IOS until the overload condition is removed or
the device begins to thermal cycle.
The second condition is when a short circuit, partial short circuit, or transient overload occurs while the device
is enabled and powered on. The device responds to the overcurrent condition within time tIOS (see Figure 8-2).
The current-sense amplifier is overdriven during this time and momentarily disables the internal current-limit
MOSFET. The current-sense amplifier recovers and ramps the output current to IOS. Similar to the previous
10
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case, the TPS256x will limit the current to IOS until the overload condition is removed or the device begins to
thermal cycle.
The TPS256x thermal cycles if an overload condition is present long enough to activate thermal limiting in any of
the above cases. The device turns off when the junction temperature exceeds 135°C (min) while in current limit.
The device remains off until the junction temperature cools 20°C (typ) and then restarts. The TPS256x cycles
on/off until the overload is removed (see Figure 7-4).
9.3.2 FAULTx Response
The FAULTx open-drain outputs are asserted (active low) on an individual channel during an overcurrent or
overtemperature condition. The TPS256x asserts the FAULTx signal until the fault condition is removed and the
device resumes normal operation on that channel. The TPS256x is designed to eliminate false FAULTx reporting
by using an internal delay "deglitch" circuit (9-ms typ) for overcurrent conditions without the need for external
circuitry. This ensures that FAULTx is not accidentally asserted due to normal operation such as starting into a
heavy capacitive load. The deglitch circuitry delays entering and leaving current-limited induced fault conditions.
The FAULTx signal is not deglitched when the MOSFET is disabled due to an overtemperature condition but
is deglitched after the device has cooled and begins to turn on. This unidrectional deglitch prevents FAULTx
oscillation during an overtemperature event.
9.3.3 Undervoltage Lockout (UVLO)
The undervoltage lockout (UVLO) circuit disables the power switch until the input voltage reaches the UVLO
turn-on threshold. Built-in hysteresis prevents unwanted on/off cycling due to input voltage droop during turn on.
9.3.4 Enable ( ENx or ENx)
The logic enables control the power switches and device supply current. The supply current is reduced to less
than 2-μA when a logic high is present on ENx or when a logic low is present on ENx. A logic low input on
ENx or a logic high input on ENx enables the driver, control circuits, and power switches. The enable inputs are
compatible with both TTL and CMOS logic levels.
9.3.5 Thermal Sense
The TPS256x self protects by using two independent thermal sensing circuits that monitor the operating
temperature of the power switch and disable operation if the temperature exceeds recommended operating
conditions. Each channel of the TPS256x operates in constant-current mode during an overcurrent conditions,
which increases the voltage drop across the power switch. The power dissipation in the package is proportional
to the voltage drop across the power switch, which increases the junction temperature during an overcurrent
condition. The first thermal sensor (OTSD) turns off the individual power switch channel when the die
temperature exceeds 135°C (min) and the channel is in current limit. Hysteresis is built into the thermal sensor,
and the switch turns on after the device has cooled approximately 20°C.
The TPS256x also has a second ambient thermal sensor (OTSD2). The ambient thermal sensor turns off both
power switch channels when the die temperature exceeds 155°C (min) regardless of whether the power switch
channels are in current limit and will turn on the power switches after the device has cooled approximately 20°C.
The TPS256x continues to cycle off and on until the fault is removed.
9.4 Device Functional Modes
There are no other functional modes.
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Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and
TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
10.1 Application Information
10.1.1 Auto-Retry Functionality
Some applications require that an overcurrent condition disables the part momentarily during a fault condition
and re-enables after a pre-set time. This auto-retry functionality can be implemented with an external resistor
and capacitor. During a fault condition, FAULTx pulls ENx low disabling the part. The part is disabled when ENx
is pulled below the turn-off threshold, and FAULTx goes high impedance allowing CRETRY to begin charging. The
part re-enables when the voltage on ENx reaches the turn-on threshold, and the auto-retry time is determined
by the resistor/capacitor time constant. The part will continue to cycle in this manner until the fault condition is
removed.
TPS2561
Input
0.1 μF
OUT1
OUT2
IN
RFAULT
2x 100 kΩ
2x CLOAD
ILIM
FAULT1
GND
EN1
FAULT2
EN2
CRETRY
2x 0.22 µF
VOUT1
VOUT2
RILIM
20 kΩ
Thermal Pad
Figure 10-1. Auto-Retry Functionality
Some applications require auto-retry functionality and the ability to enable/disable with an external logic signal.
The figure below shows how an external logic signal can drive EN through RFAULT and maintain auto-retry
functionality. The resistor/capacitor time constant determines the auto-retry time-out period.
TPS2561
Input
External Logic
Signal & Drivers
RFAULT
2x 100 kΩ
CRETRY
2x 0.22 µF
0.1 μF
IN
OUT1
OUT2
VOUT1
VOUT2
2x CLOAD
ILIM
FAULT1
GND
EN1
FAULT2
EN2
RILIM
20 kΩ
Thermal Pad
Figure 10-2. Auto-Retry Functionality With External EN Signal
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10.1.2 Two-Level Current-Limit Circuit
Some applications require different current-limit thresholds depending on external system conditions. Figure
10-3 shows an implementation for an externally controlled, two-level current-limit circuit. The current-limit
threshold is set by the total resistance from ILIM to GND (see previously discussed Programming the Current
Limit Threshold section). A logic-level input enables/disables MOSFET Q1 and changes the current-limit
threshold by modifying the total resistance from ILIM to GND. Additional MOSFET/resistor combinations can
be used in parallel to Q1/R2 to increase the number of additional current-limit levels.
Note
ILIM should never be driven directly with an external signal.
TPS2560/61
0.1 μF
2.5V – 6.5V
2x RFAULT
100 kΩ
IN
IN
FAULT1
FAULT2 ILIM
EN1
GND
EN2
Thermal Pad
Fault Signal
Fault Signal
Control Signal
Control Signal
VOUT1
OUT1
OUT2
VOUT2
2x CLOAD
R1
187 kΩ
R2
22.1 kΩ
Q1
Current Limit
Control Signal
Figure 10-3. Two-Level Current-Limit Circuit
10.2 Typical Application
TPS2560/61
VIN = 5V
0.1 uF
2x RFAULT
100 kΩ
IN
IN
ILIM
FAULT 1
FAULT 2 GND
EN1
EN2
Thermal Pad
Faultx Signals
Control Signals
VOUT1
OUT1
OUT2
VOUT2
24.9kΩ
2x 150 µF
Figure 10-4. Typical Application Circuit
10.2.1 Design Requirements
See the design parameters in Table 10-1.
Table 10-1. Design Parameters
PARAMETER
VALUE
Input voltage
5V
Output voltage
5V
Above a minimum current limit
2000 mA
Below a minimum current limit
1000 mA
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10.2.2 Detailed Design Procedure
10.2.2.1 Input and Output Capacitance
Input and output capacitance improves the performance of the device; the actual capacitance should be
optimized for the particular application. For all applications, a 0.1μF or greater ceramic bypass capacitor
between IN and GND is recommended as close to the device as possible for local noise decoupling. This
precaution reduces ringing on the input due to power-supply transients. Additional input capacitance may be
needed on the input to reduce voltage overshoot from exceeding the absolute maximum voltage of the device
during heavy transient conditions. This is especially important during bench testing when long, inductive cables
are used to connect the evaluation board to the bench power supply.
Output capacitance is not required, but placing a high-value electrolytic capacitor on the output pin is
recommended when large transient currents are expected on the output.
10.2.2.2 Programming the Current-Limit Threshold
The overcurrent threshold is user programmable via an external resistor, RILIM. RILIM sets the current-limit
threshold for both channels. The TPS256x use an internal regulation loop to provide a regulated voltage on
the ILIM pin. The current-limit threshold is proportional to the current sourced out of ILIM. The recommended
1% resistor range for RILIM is 20 kΩ ≤ RILIM ≤ 187 kΩ to ensure stability of the internal regulation loop. Many
applications require that the minimum current limit is above a certain current level or that the maximum current
limit is below a certain current level, so it is important to consider the tolerance of the overcurrent threshold
when selecting a value for RILIM. The following equations calculates the resulting overcurrent threshold for a
given external resistor value (RILIM). The traces routing the RILIM resistor to the TPS256x should be as short as
possible to reduce parasitic effects on the current-limit accuracy.
IOSmax (mA) =
52850V
RILIM0.957kW
IOSnom (mA) =
56000V
RILIMkW
IOSmin (mA) =
61200V
RILIM1.056kW
(1)
3000
2750
Current-Limit Threshold (mA)
2500
2250
2000
1750
1500
1250
1000
IOS(max)
IOS(typ)
750
500
IOS(min)
250
0
20
30
40
50
60
70
80
90
100
110
120
130
140
150
RILIM – Current Limit Resistor – kΩ
Figure 10-5. Current-Limit Threshold vs RILIM
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10.2.2.3 Application 1: Designing Above a Minimum Current Limit
Some applications require that current limiting cannot occur below a certain threshold. For this example, assume
that 2 A must be delivered to the load so that the minimum desired current-limit threshold is 2000 mA. Use the
IOS equations and Figure 10-5 to select RILIM.
IOSmin (mA) = 2000mA
IOSmin (mA) =
61200V
RILIM1.056kW
1
æ 61200V ö÷1.056
÷
RILIM (kW) = ççç
çèIOSminmA ø÷÷
RILIM (kW) = 25.52kW
(2)
Select the closest 1% resistor less than the calculated value: RILIM = 25.5 kΩ. This sets the minimum currentlimit threshold at 2 A . Use the IOS equations, Figure 10-5, and the previously calculated value for RILIM to
calculate the maximum resulting current-limit threshold.
RILIM (kW) = 25.5kW
IOSmax (mA) =
IOSmax (mA) =
52850V
RILIM0.957kW
52850V
25.50.957kW
IOSmax (mA) = 2382mA
(3)
The resulting maximum current-limit threshold is 2382 mA with a 25.5-kΩ resistor.
10.2.2.4 Application 2: Designing Below a Maximum Current Limit
Some applications require that current limiting must occur below a certain threshold. For this example, assume
that the desired upper current-limit threshold must be below 1000 mA to protect an up-stream power supply. Use
the IOS equations and Figure 10-5 to select RILIM.
IOSmax (mA) = 1000mA
IOSmax (mA) =
52850V
RILIM0.957kW
1
æ 52850V ÷ö0.957
÷÷
RILIM (kW) = ççç
çèI
mA ÷ø
OSmax
RILIM (kW) = 63.16kW
(4)
Select the closest 1% resistor greater than the calculated value: RILIM = 63.4 kΩ. This sets the maximum
current-limit threshold at 1000 mA . Use the IOS equations, Figure 10-5, and the previously calculated value for
RILIM to calculate the minimum resulting current-limit threshold.
RILIM (kW) = 63.4kW
IOSmin (mA) =
IOSmin (mA) =
61200V
RILIM1.056kW
61200V
63.41.056 kW
IOSmin (mA) = 765mA
(5)
The resulting minimum current-limit threshold is 765 mA with a 63.4 kΩ resistor.
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10.2.2.5 Accounting for Resistor Tolerance
The previous sections described the selection of RILIM given certain application requirements and the importance
of understanding the current-limit threshold tolerance. The analysis focused only on the TPS256x performance
and assumed an exact resistor value. However, resistors sold in quantity are not exact and are bounded by
an upper and lower tolerance centered around a nominal resistance. The additional RILIM resistance tolerance
directly affects the current-limit threshold accuracy at a system level. The following table shows a process that
accounts for worst-case resistor tolerance assuming 1% resistor values. Step one follows the selection process
outlined in the application examples above. Step two determines the upper and lower resistance bounds of
the selected resistor. Step three uses the upper and lower resistor bounds in the IOS equations to calculate
the threshold limits. It is important to use tighter tolerance resistors, e.g. 0.5% or 0.1%, when precision current
limiting is desired.
Table 10-2. Common RILIM Resistor Selections
DESIRED
NOMINAL
CURRENT LIMIT
IDEAL
RESISTOR
CLOSEST 1%
RESISTOR
1% LOW
RESISTOR
TOLERANCE
1% HIGH
RESISTOR
TOLERANCE
300 mA
186.7 kΩ
187 kΩ
185.1 kΩ
400 mA
140.0 kΩ
140 kΩ
138.6 kΩ
600 mA
93.3 kΩ
93.1 kΩ
800 mA
70.0 kΩ
69.8 kΩ
1000 mA
56.0 kΩ
1200 mA
46.7 kΩ
1400 mA
1600 mA
16
IOS ACTUAL LIMITS
MIN
NOM
MAX
UNIT
188.9 kΩ
241.6
299.5
357.3
mA
141.4 kΩ
328.0
400.0
471.4
mA
92.2 kΩ
94.0 kΩ
504.6
601.5
696.5
mA
69.1 kΩ
70.5 kΩ
684.0
802.3
917.6
mA
56.2 kΩ
55.6 kΩ
56.8 kΩ
859.9
996.4
1129.1
mA
46.4 kΩ
45.9 kΩ
46.9 kΩ
1052.8
1206.9
1356.3
mA
40.0 kΩ
40.2 kΩ
39.8 kΩ
40.6 kΩ
1225.0
1393.0
1555.9
mA
35.0 kΩ
34.8 kΩ
34.5 kΩ
35.1 kΩ
1426.5
1609.2
1786.2
mA
1800 mA
31.1 kΩ
30.9 kΩ
30.6 kΩ
31.2 kΩ
1617.3
1812.3
2001.4
mA
2000 mA
28.0 kΩ
28 kΩ
27.7 kΩ
28.3 kΩ
1794.7
2000.0
2199.3
mA
2200 mA
25.5 kΩ
25.5 kΩ
25.2 kΩ
25.8 kΩ
1981.0
2196.1
2405.3
mA
2400 mA
23.3 kΩ
23.2 kΩ
23.0 kΩ
23.4 kΩ
2188.9
2413.8
2633.0
mA
2600 mA
21.5 kΩ
21.5 kΩ
21.3 kΩ
21.7 kΩ
2372.1
2604.7
2831.9
mA
2800 mA
20.0 kΩ
20 kΩ
19.8 kΩ
20.2 kΩ
2560.4
2800.0
3034.8
mA
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10.2.3 Application Curves
VOUT1
5 V/div
VOUT1
5 V/div
VOUT2
5 V/div
VOUT2
5 V/div
VEN1_bar
5 V/div
VEN1_bar
VEN1_bar = VEN2_bar
5 V/div
VEN1_bar = VEN2_bar
IIN
2 A/div
IIN
2 A/div
t - Time - 2 ms/div
t - Time - 2 ms/div
Figure 10-6. Turn-On Delay and Rise Time
VOUT1
5 V/div
Figure 10-7. Turn-Off Delay and Fall Time
VOUT1
5 V/div
VOUT2
5 V/div
VOUT2
5 V/div
FAULT2_bar
5 V/div
FAULT2_bar
5 V/div
IIN
2 A/div
IIN
2 A/div
t - Time - 20 ms/div
t - Time - 20 ms/div
Figure 10-8. Full-Load to Short-Circuit Transient
Response
Figure 10-9. Short-Circuit to Full-Load Recovery
Response
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10 Power Supply Recommendations
10.1 Self-Powered and Bus-Powered Hubs
A SPH has a local power supply that powers embedded functions and downstream ports. This power supply
must provide between 4.75 V to 5.25 V to downstream facing devices under full-load and no-load conditions.
SPHs are required to have current-limit protection and must report overcurrent conditions to the USB controller.
Typical SPHs are desktop PCs, monitors, printers, and stand-alone hubs. A BPH obtains all power from an
upstream port and often contains an embedded function. It must power up with less than 100 mA. The BPH
usually has one embedded function, and power is always available to the controller of the hub. If the embedded
function and hub require more than 100 mA on power up, the power to the embedded function may need to be
kept off until enumeration is completed. This is accomplished by removing power or by shutting off the clock to
the embedded function. Power switching the embedded function is not necessary if the aggregate power draw
for the function and controller is less than 100 mA. The total current drawn by the bus-powered device is the sum
of the current to the controller, the embedded function, and the downstream ports, and it is limited to 500 mA
from an upstream port.
10.2 Low-Power Bus-Powered and High-Power Bus-Powered Functions
Both low-power and high-power bus-powered functions obtain all power from upstream ports. Low-power
functions always draw less than 100 mA; high-power functions must draw less than 100 mA at power up and can
draw up to 500 mA after enumeration. If the load of the function is more than the parallel combination of 44 Ω
and 10 μF at power up, the device must implement inrush current limiting.
18
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11 Layout
11.1 Layout Guidelines
•
•
•
•
Place the 100-nF bypass capacitor near the IN and GND pins, and make the connections using a lowinductance trace
Place a high-value electrolytic capacitor and a 100-nF bypass capacitor on the output pin is recommended
when large transient currents are expected on the output
The traces routing the RILIM resistor to the device should be as short as possible to reduce parasitic effects
on the current limit accuracy
The thermal pad should be directly connected to PCB ground plane using wide and short copper trace
11.1.1 Power Dissipation
The low on-resistance of the N-channel MOSFET allows small surface-mount packages to pass large currents.
It is good design practice to estimate power dissipation and junction temperature. The below analysis gives an
approximation for calculating junction temperature based on the power dissipation in the package. However, it
is important to note that thermal analysis is strongly dependent on additional system level factors. Such factors
include air flow, board layout, copper thickness and surface area, and proximity to other devices dissipating
power. Good thermal design practice must include all system level factors in addition to individual component
analysis.
Begin by determining the rDS(on) of the N-channel MOSFET relative to the input voltage and operating
temperature. As an initial estimate, use the highest operating ambient temperature of interest and read rDS(on)
from the typical characteristics graph. Using this value, the power dissipation can be calculated with Equation 6.
This step calculates the total power dissipation of the N-channel MOSFET.
PD = (RDS(on) × IOUT1 2) +(RDS(on) × IOUT2 2)
(6)
where
•
•
•
PD = Total power dissipation (W)
rDS(on) = Power switch on-resistance of one channel (Ω)
IOUTx = Maximum current-limit threshold set by RILIM(A)
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Finally, calculate the junction temperature with Equation 7.
TJ = PD × RθJA + TA
(7)
where
•
•
•
TA = Ambient temperature (°C)
RθJA = Thermal resistance (°C/W)
PD = Total power dissipation (W)
Compare the calculated junction temperature with the initial estimate. If they are not within a few degrees,
repeat the calculation using the "refined" rDS(on) from the previous calculation as the new estimate. Two or three
iterations are generally sufficient to achieve the desired result. The final junction temperature is highly dependent
on thermal resistance RθJA, and thermal resistance is highly dependent on the individual package and board
layout. The Dissipation Ratings table provides example thermal resistances for specific packages and board
layouts.
11.2 Layout Example
Figure 11-1. Layout Recommendation
20
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12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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26-Feb-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS2560DRCR
ACTIVE
VSON
DRC
10
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2560
TPS2560DRCT
ACTIVE
VSON
DRC
10
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2560
TPS2561DRCR
ACTIVE
VSON
DRC
10
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2561
TPS2561DRCT
ACTIVE
VSON
DRC
10
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2561
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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