TPS25762-Q1
SLVSGL9 – DECEMBER 2022
TPS25762-Q1 Automotive USB Type-C® Power Delivery Controller with Buck-Boost
Regulator
1 Features
3 Description
•
The TPS25762-Q1 is a fully integrated USB TypeC® Power Delivery (PD) solution with integrated
Buck-Boost converter for automotive single USB
port applications. Functionality includes: integrated
Buck-Boost converter with 4 power switches; an
ARM® Cortex®-M0; USB port controller with Type-C
cable plug and orientation detection; USB Battery
Charging Specification Version 1.2 (BC1.2) detection;
USB Endpoint PHY; device power management and
supervisory circuitry; and connector pin protection
over-voltage and short-circuit protection.
•
•
•
Device Information
PART NUMBER
TPS25762-Q1
PACKAGE
BODY SIZE
RQL (QFN-29)
6.00 mm × 5.00 mm
IN
ON
OFF
EN
LDO5V
LDO3V3
LDO1V5
AGND
TVSP
E2PROM
(32kB)
IRQ
SCL1
SDA1
PGND
PA_CC1
PA_CC2
PA_DP
PA_DM
CSN/BUS
CSP
OUT
3-21V
3V3
LS_GD
NTC
GPIO0
GPIO1
TPS25762-Q1
2 Applications
•
•
•
•
PORT A
VBAT
TYPE-C CONNECTOR
•
Device configuration settings are selected through an
intuitive graphical user interface (GUI).
SCL2
SDA2
SYNC
•
An intelligent System Policy Manager maximizes
delivered USB power while protecting the system from
automotive battery transient and over-temperature
conditions.
Battery
•
AEC-Q100 qualified with the following results:
– Device temperature grade 1: –40°C to +125°C
ambient operating temperature range
– Device HBM ESD classification level 2
– Device CDM ESD classification level C2b
– Enhanced connector pin ESD protection
USB Power Delivery (PD) controller with
Programmable Power Supply (PPS) support
– Wide VIN: 5.5 V to 18 V (40-V maximum)
– Integrated buck-boost 4 power switches
supporting up to 65-W USB PD output power
– VBUS output: 3–21 V with ±20-mV step size
– IBUS output: 0–3 A with ±50-mA current limit
step size
– VBUS short circuit to VBAT and GND protection
– VBUS cable droop compensation
– MFi overcurrent protection
– Switching frequency: 300, 400, 450 kHz
– DC/DC sync in/out with dithering
USB port configurations options
– 1 USB-PD Port (TPS25762-Q1)
– 2 USB-PD Ports (TPS25772-Q1)
Compliant to USB
– USB Type-C® Power Delivery Rev 3.1
• CC logic, VCONN source and discharge
• USB cable polarity detection
– Battery charging specification rev 1.2
• DCP: Dedicated Charging Port
Legacy Fast Charging
– 2.7-V divider-3 mode
– 1.2-V divider mode
– High Voltage DCP Protocol
Microcontroller core allows
– Firmware updates
– Supply voltage and temperature-dependent
power management
Short to VBUS and VBAT protection
– VBUS
– Px_ DP and Px_DM
– Px_CC1 and Px_CC2
Automotive USB Charge
Automotive Media Hub
Automotive Head Unit
Automotive Rear Seat Entertainment
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS25762-Q1
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SLVSGL9 – DECEMBER 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................4
7 Specifications.................................................................. 6
7.1 Absolute Maximum Ratings........................................ 6
7.2 ESD Ratings .............................................................. 7
7.3 Recommended Operating Conditions.........................7
7.4 Recommended Components...................................... 8
7.5 Thermal Information....................................................9
7.6 Buck-Boost Regulator................................................. 9
7.7 CC Cable Detection Parameters...............................13
7.8 CC VCONN Parameters........................................... 13
7.9 CC PHY Parameters.................................................14
7.10 Thermal Shutdown Characteristics......................... 15
7.11 Oscillator Characteristics........................................ 15
7.12 ADC Characteristics................................................15
7.13 TVS Parameters..................................................... 16
7.14 Input/Output (I/O) Characteristics........................... 16
7.15 BC1.2 Characteristics............................................. 17
7.16 I2C Requirements and Characteristics................... 18
7.17 Typical Characteristics............................................ 21
8 Parameter Measurement Information.......................... 29
9 Detailed Description......................................................31
9.1 Overview................................................................... 31
9.2 Functional Block Diagram......................................... 32
9.3 Feature Description...................................................32
9.4 Device Functional Modes..........................................63
10 Application and Implementation................................ 65
10.1 Application Information........................................... 65
10.2 Typical Application.................................................. 65
11 Power Supply Recommendations..............................80
12 Layout...........................................................................81
12.1 Layout Guidelines................................................... 81
12.2 Layout Example...................................................... 82
13 Device and Documentation Support..........................83
13.1 Documentation Support.......................................... 83
13.2 Receiving Notification of Documentation Updates..83
13.3 Support Resources................................................. 83
13.4 Trademarks............................................................. 83
13.5 Electrostatic Discharge Caution..............................83
13.6 Glossary..................................................................83
14 Mechanical, Packaging, and Orderable
Information.................................................................... 84
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
2
DATE
REVISION
NOTES
December 2022
*
Initial Release
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SLVSGL9 – DECEMBER 2022
5 Device Comparison Table
PART NUMBER
TPS25762-Q1
TPS25772-Q1
Port A
USB-PD
Port B
Port A Output Power
Port B Output Power
n/a
65 W
n/a
USB-PD
65 W
65 W
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SLVSGL9 – DECEMBER 2022
LDO_3V3
GPIO3 | I2C_SDA2
27
26
IN
SW1
PGND
SW2
CSP
28
OUT
CSN/BUS
29
6 Pin Configuration and Functions
I2C_SDA1 4
22
TVSP
AGND 5
21
LDO_5V
EN/UVLO 6
20
PA_CC1
LDO_1V5 7
19
PA_CC2
GPIO5 | NTC 8
18
PA_DP | GPIO8
PA_DM | GPIO7 17
GPIO0
BOOT1 16
23
IN 15
I2C_SCL1 3
SW1 14
GPIO1 | IRQ2(o)
PGND 13
24
SW2 12
GPIO9 | IRQ 2
OUT 11
GPIO2 | I2C_SCL2
BOOT2 10
25
PA_LSGD 9
GPIO6 | SYNC 1
Figure 6-1. RQL Package 29-Pin (VQFN) Top View
4
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SLVSGL9 – DECEMBER 2022
Table 6-1. Pin Descriptions
PIN
NAME
DESCRIPTION
NO.
EN/UVLO
6
Enable pin. For EN/UVLO < 0.3 V, the TPS25762-Q1 is in a low current shutdown mode. For
EN/UVLO > 1.3 V, the full functionality is enabled, provided LDO_5V exceeds the LDO_5V UVLO
threshold.
IN
15
The input supply pin to the IC. Connect VIN to a supply voltage between 5.5 V and 18 V (40-V
ABS MAX transient).
PGND
13
Power ground of the IC. The high current ground connection to the low-side gate drivers.
SW1
14
The buck side switching node.
SW2
12
The boost side switching node.
BOOT1
16
An external capacitor is required between the BOOT1 and the SW1 pins to provide bias to the
high-side MOSFET gate drivers.
BOOT2
10
An external capacitor is required between the BOOT2 and the SW2 pins to provide bias to the
high-side MOSFET gate drivers.
AGND
5
Analog ground of the IC.
OUT
11
Output of the buck-boost regulator. Connect to bulk capacitance.
CSP
28
Positive input of the current sense amplifier.
CSN/BUS
29
Negative input of the current sense amplifier. This is the PA_VBUS supply.
LDO_5V
21
Output of internal 5 V LDO for buck-boost low-side FET drivers, and Px_VCONN supply. Connect
bypass capacitor to PGND. May be overdriven from external 5-V supply.
LDO_3V3
27
Output of internal 3.3-V LDO for analog circuitry and GPIO drivers. Connect bypass capacitor to
AGND.
LDO_1V5
7
Output of internal 1.5-V LDO for digital circuitry. Connect bypass capacitor to AGND.
I2C_SCL1
3
Controller I2C Clock Input/Output.
I2C_SDA1
4
Controller I2C Data Input/Output.
GPIO2 (I2C_SCL2)
25
Multifunction pin. GPIO; or target I2C Clock Input.
GPIO3 (I2C_SDA2)
26
Multifunction pin. GPIO; or target I2C Data Input.
IRQ (GPIO9)
2
Multifunction pin. Interrupt I/O and fault flag for I2C1 or I2C2; or GPIO depending upon firmware
configuration. Reports fault conditions set by application configuration firmware.
PA_CC1
20
Analog input/output. Port A Type-C current advertisement, VCONN, and USB PD modem.
Connect to Port A Type-C connector CC1 pin.
PA_CC2
19
Analog input/output. Port A Type-C current advertisement, VCONN, and USB PD modem.
Connect to Port A Type-C connector CC2 pin.
PA_DP (GPIO8)
18
Multifunction pin. BC1.2 USB 2.0 D+ data line input/output. Connect to Port A Type-C USB data
line DP connector pins. May also be used as GPIO depending upon firmware configuration.
PA_DM (GPIO7)
17
Multifunction pin. BC1.2 USB 2.0 D- data line input/output. Connect to Port A Type-C USB data
line DM connector pins. May also be used as GPIO depending upon firmware configuration.
GPIO0
23
GPIO
GPIO1 or IRQ2(o)
24
Multifunction pin. GPIO or Interrupt I/O depending upon firmware configuration.
GPIO5 (NTC)
8
Multifunction pin. GPIO; thermistor input (can use either negative temperature coefficient resistor
or positive temperature coefficient resistor).
GPIO6 (SYNC)
1
Multifunction pin. GPIO; SYNC(o) - clock out to synchronize slave DC/DC regulators to internal
DC/DC switching frequency; SYNC(i) - clock input to synchronize internal DC/DC to an external
clock.
PA_LSGD
9
Charge pump output for external NFET for VBUS bulk capacitance blocking.
TVSP
22
Transient voltage protection and firmware setting pin. See Table 9-3 for boot configuration. See
Table 9-2 for R-C network component values.
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SLVSGL9 – DECEMBER 2022
7 Specifications
7.1 Absolute Maximum Ratings
Over the recommended operating junction temperature range of -40°C to 150°C and AGND = PGND (unless otherwise
noted)(1) (2)
6
MIN
MAX
Input voltage range
IN (3) (4) to PGND
–0.3
40
V
Input voltage range
IN with respect to SW1
–0.3
25
V
Input voltage range
EN/UVLO (5) to AGND
–0.3
internally limited
V
Input voltage range
BOOT1 with respect to SW1
–0.3
6
V
Input voltage range
BOOT2 with respect to SW2 (6)
–0.3
6
V
Input voltage range
SW1 (7) to PGND
–0.3
24
V
(8)
Input voltage range
SW2
Input voltage range
SW2 to OUT
to PGND
–0.3
Input voltage range
CSP to PGND
Input voltage range
CSN/BUS to PGND
Input voltage range
Input voltage range
UNIT
24
V
17.5
V
–0.3
24
V
–0.3
24
V
CSP to CSN
-0.3
0.3
V
AGND to PGND
–0.3
0.3
V
Output voltage range
OUT to PGND
–0.3
24
V
Output voltage range
LDO_5V to PGND
–0.3
6
V
Output voltage range
LDO_3V3 to AGND
–0.3
6
V
Output voltage range
LDO_1V5 to AGND
–0.3
2
V
I/O voltage range
TVSP to PGND
–0.3
30
V
I/O voltage range
I2C_SCL1 to AGND
–0.3
6
V
I/O voltage range
I2C_SDA1 to AGND
–0.3
6
V
I/O voltage range
GPIO9, IRQ1 to AGND
–0.3
6
V
I/O voltage range
PA_CC1 to AGND
–0.3
30
V
I/O voltage range
PA_CC2 to AGND
–0.3
30
V
I/O voltage range
PA_DM to AGND
–0.3
30
V
I/O voltage range
GPIO7 to AGND
–0.3
6
V
I/O voltage range
PA_DP to AGND
–0.3
30
V
I/O voltage range
GPIO8 to AGND
–0.3
6
V
I/O voltage range
GPIO0 to AGND
–0.3
6
V
I/O voltage range
GPIO1, IRQ2 to AGND
–0.3
6
V
I/O voltage range
GPIO2, I2C_SCL2 to AGND
–0.3
6
V
I/O voltage range
GPIO3, I2C_SDA2 to AGND
–0.3
6
V
I/O voltage range
PA_LSGD to PGND
–0.3
30
V
I/O voltage range
GPIO5, NTC to AGND
–0.3
6
V
I/O voltage range
GPIO6, SYNC to AGND
–0.3
6
V
I/O voltage range
PA_LSGD to CSN/BUS
–0.3
10
V
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7.1 Absolute Maximum Ratings (continued)
Over the recommended operating junction temperature range of -40°C to 150°C and AGND = PGND (unless otherwise
noted)(1) (2)
Input current
EN/UVLO
Output current
Positive source current on PA_CC1, PA_CC2
Output current
GPIO 2, 3, 5, 6, 7, 8
Output current
GPIO 0, 1, 4, 9
Output current
positive sink current for I2C_SDA1, I2C_SCL1,
I2C_SDA2, I2C2_SCL2
Output current
positive source current for LDO_5V, LDO_3V3,
LDO_1V5
MIN
MAX
0
2
UNIT
mA
internally limited
A
0.0010
A
0.005
A
internally limited
A
internally limited
A
TA Operating ambient temperature
–40
125
°C
TJ Operating junction temperature
–40
150
°C
TSTG Storage temperature
–55
150
°C
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated
under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
All voltage values are with respect to PGND or AGND. Connect the PGND pin directly to the Ground plane of the board. The PGND
and AGND traces can be connected near the AGND pin.
When the buck-boost is operating and VIN exceeds 18 V, the positive slew rate dVIN/dt must not exceed 200V/ms.
When applying VIN, the time from VIN exceeding 5 V to VIN exceeding 25 V must not be less than 2 µs. This is normally achieved by
properly sizing the input EMI filter.
EN/UVLO pin is internally clamped to 10V. Ensure input current rating is not exceeded by connecting current limit resistor.
BOOT2 with respect to SW2 during OUT overvoltage conditions can be -15 V due to internal clamp.
SW1 can undershoot PGND by -1 V during negative switching transients as up to 10A (peak) may flow through the body diode. Typical
duration ~20 ns. SW1 can overshoot OUT by 1 V during positive transients. Typical duration ~ 20 ns.
SW2 can undershoot PGND by -2 V during switching transients as up to 10A (peak) may flow through the body diode. Typical duration
~20 ns. SW2 can overshoot OUT by 1 V during positive transients. Typical duration ~20 ns.
7.2 ESD Ratings
VALUE
UNIT
±2000(1)
V
±750(2)
V
V(ESD)
Electrostatic discharge
Human-body model (HBM), per
AEC Q100-002
V(ESD)
Electrostatic discharge
Charged-device model (CDM), per
AEC Q100-011
V(ESD)
Electrostatic discharge
IEC61000-4-2 Contact discharge
150 pF, 330 Ω.
OUT, CSP, CSN/BUS, PA_CC1,
PA_CC2, PA_DP, PA_DM
±2000(3)
V
V(ESD)
Electrostatic discharge
IEC61000-4-2 Contact
discharge 150 pF, 330 Ω.
OUT, CSP, CSN/BUS, PA_CC1,
PA_CC2, PA_DP, PA_DM
±2000(3)
V
V(ESD)
Electrostatic discharge
ISO 10605 Contact discharge 330
pF, 330 Ω.
OUT, CSP, CSN/BUS, PA_CC1,
PA_CC2, PA_DP, PA_DM
±2000(3)
V
V(ESD)
Electrostatic discharge
ISO 10605 Air-gap discharge 330
pF, 330 Ω.
OUT, CSP, CSN/BUS, PA_CC1,
PA_CC2, PA_DP, PA_DM
±2000(3)
V
(1)
(2)
(3)
AEC Q100-002 indicates that HBM stressing shall be in accordancewith the ANSI/ESDA/JEDEC JS-001 specification.
The passing level per AEC-Q100 Classification C2b.
Test conducted on Texas Instruments evaulation board.
7.3 Recommended Operating Conditions
Over the recommended operating junction temperature range of -40°C to 150°C (unless otherwise noted)
MIN
MAX
UNIT
VI
Input voltage range (up to 65W
output)
IN
6.8
18
V
VI
Input voltage range (up to 30W
output)
IN
5.5
18
V
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7.3 Recommended Operating Conditions (continued)
Over the recommended operating junction temperature range of -40°C to 150°C (unless otherwise noted)
MIN
MAX
UNIT
VI
Input voltage range
EN/UVLO
0
7 (2)
V
II
Input current
EN/UVLO
0
1
VI
Input voltage range
LDO_5V when overdriven by
external supply
4.75
5.5
V
VI
Input voltage range
CSP, CSN/BUS
0
22
V
VI
Input voltage range
PB_VBUS (GPIO4 when
configured as PB_VBUS)
3
22
V
VO
Output voltage range
OUT
0
21
V
VIO
I/O voltage range
PA_CC1, PA_CC2, PB_CC1,
PB_CC2
0
5.5
V
VIO
I/O voltage range
PA_DP, PA_DM, PB_DP, PB_DM
0
3.6
V
VIO
I/O voltage range
I2C_SDAn, I2C_SCLn, IRQn (n=1
or 2)
0
5.5
V
VIO
I/O voltage range
GPIOn (n = 0 - 9)
0
3.6
V
VIO
I/O voltage range
NTC monitor (GPIO5), SYNC
(GPIO6)
0
3.6
V
IO
Output current(1)
IOUT
5
A
IO
Output current
PA_CC1, PA_CC2, PB_CC1,
PB_CC2
IO
Output current (from LDO_3V3)
GPIOn (n = 0 - 9)
fsw
Buck-boost converter switching
frequency driven from SYNC pin
TA
TJ
(1)
(2)
mA
225
mA
10
mA
250
500
kHz
Ambient operating temperature
–40
125
°C
Operating junction temperature
–40
150
°C
Average LC filtered output current from buck-boost power stage. Operation with IOUT > 3A with VOUT > 10 V may result in thermal
shutdown.
EN/UVLO MAX specification specification applies when current into pin is not externally limited.
7.4 Recommended Components
over operating free-air temperature range (unless otherwise noted)
PARAMETER (1)
MIN
TYP
CIN
Capacitance on VIN
40 V
22
47
CLDO_5V
Capacitance on LDO_5V (supplied
10 V
internally)
4.7
CLDO_5V
Capacitance on LDO_5V (supplied
10 V
externally)
10
CLDO_3V3
Capacitance on LDO_3V3
6.3 V
CLDO_1V5
Capacitance on LDO_1V5
6.3 V
pins(2)
MAX
UNIT
µF
10
µF
100
µF
4.7
10
µF
4.7
10
µF
47
CPx_CCy
Capacitance on Px_CCy
6.3 V
200
330
480
pF
CBOOT1, CBOOT2
Boot charge capacitance
10 V
0.08
0.1
0.3
µF
RSnubber_SW1
RC snubber resistor on SW1
35 V, 0.25 W
CSnubber_SW1
RC snubber capacitor on SW1
35 V
RSnubber_SW2
RC snubber resistor on SW2
35 V, 0.25 W
1.1
Ω
CSnubber_SW2
RC snubber capacitor on SW2
35 V
3.3
nF
COUT
Capacitance on OUT (4)
35 V
30
33
40
µF
CBUS
Capacitance on PA_VBUS
35 V
100
120
150
µF
3.3
4.7
5.6
µH
L
8
VOLTAGE RATING
Inductor
(4)
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Ω
1
nF
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over operating free-air temperature range (unless otherwise noted)
PARAMETER (1)
VOLTAGE RATING
MIN
TYP
MAX
UNIT
100
kΩ
NTC
Thermistor
47
REN/UVLO
Enable/UVLO pull up resitance
47
TVPS pin components
(CTVSP || (DamperR + C))
CTVSP Capacitance on TVSP pin
(3)
40 V
TVPS pin components
(CTVSP || (DamperR + C))
Damper resistor R of R + C
network in Parallel with CTVSP
0.25W
TVPS pin components
(CTVSP || (DamperR + C))
Damper capacitor C of R + C
network in Parallel with CTVSP
40 V
ESRCTVSP
TVSP Capacitor ESR (eq series
resistance)
10
mΩ
ESLCTVSP
TVSP Capacitor ESL (eq series
inductance)
1
nH
(1)
(2)
(3)
(4)
kΩ
0.08
0.1
0.12
µF
8
10
12
Ω
0.376
0.47
0.564
µF
Capacitance values do not include any derating factors. For example, if 5.0 µF is required and the external capacitor value reduces by
50% at the required operating voltage, then the required external capacitor value would be 10 µF.
This includes all capacitance to the Type-C receptacle.
Maximum capacitance allowed on TVSP pin to ensure propoer decode of device configuration during boot.
See applications section for recommended L and COUT combinations.
7.5 Thermal Information
TPS25762-Q1
THERMAL METRIC(1)
Hot Rod
UNIT
29 PINS
RθJA
Junction-to-ambient thermal resistance
33.3
RθJC(top)
Junction-to-case (top) thermal resistance
13.1
RθJB
Junction-to-board thermal resistance
7.3
ψJT
Junction-to-top characterization parameter
0.3
ψJB
Junction-to-board characterization parameter
7.2
(1)
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.6 Buck-Boost Regulator
Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, VEN/UVLO = 2V unless otherwise stated. (1)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
130
µA
SUPPLY VOLTAGE (VIN)
IQ
VIN shutdown current
VEN/UVLO = 0 V
IQ
VIN operating current
VEN/UVLO = 2V, VOUT = 5 V, IOUT = 0
A
IQ
VIN operating current
VEN/UVLO = 1V, VOUT = 0 V, IOUT = 0
A
4.5
mA
IQ
VIN operating current
VEN/UVLO = 2V, VOUT = 0 V, IOUT = 0
A
8
mA
VIN(OVP_R)
VIN rising overvoltage threshold
VIN rising.
18.4
19.2
20
V
VIN(OVP_F)
VIN falling overvoltage threshold
VIN falling.
18.0
18.8
19.6
V
8
hysteresis
mA
0.4
V
VIN(UVLO_R)
VIN undervoltage lockout rising
VIN rising.
5.14
5.30
5.46
V
VIN(UVLO_F)
VIN undervoltage lockout falling
VIN falling.
5.04
5.20
5.36
V
hysteresis
0.1
V
LDO_5V OUTPUT
VLDO_5V
LDO_5V Output Regulation voltage
7V ≤ VIN ≤ 18 V, 0 < ILDO_5V <
125mA, VEN = 2 V.
4.5
4.63
4.75
V
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SLVSGL9 – DECEMBER 2022
Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, VEN/UVLO = 2V unless otherwise stated. (1)
MIN
TYP
MAX
UNIT
VLDO_5V(UVLO_R)
PARAMETER
LDO_5V Undervoltage lockout rising
TEST CONDITION
4.29
4.4
4.51
V
VLDO_5V(UVLO_F)
LDO_5V Undervoltage lockout
falling
4.09
4.2
4.31
V
Undervoltage hysteresis
VLDO_5V_DO
200
mV
drop out voltage
VIN = 5.5 V; ILDO_5V = 125mA
4.3
LDO_5V current limit
VLDO_V5V = 0 to 3.5 V,
RLDO_V5V_LOAD = 1 Ω
125
200
400
mA
VLDO_3V3
LDO_3V3 Output regulation voltage
7V ≤ VIN ≤ 18 V, VEN = 2 V,
VLDO_5V(UVLO) < VLDO_5V < 5.5 V, 0
< ILDO_3V3 < 25mA
3.4
3.5
3.6
V
VLDO_3V3(UVLO_R)
LDO_3V3 Undervoltage lockout
rising
3.2
3.3
3.4
V
VLDO_3V3(UVLO_F)
LDO_3V3 Undervoltage lockout
falling
3.05
3.15
3.25
V
ILDO_5V(ILIMIT)
V
LDO_3V3 OUTPUT
Undervoltage hysteresis
VLDO_3V3_DO
150
mV
drop out voltage
VIN = 4.5 V, ILDO_3V3 = 30mA
3.3
LDO_3V3 current limit
VLDO_3V3 = 0 to 2.5 V, RLDO_3V3_LOAD
=1Ω
35
50
80
VLDO_1V5
LDO_1V5 Output Regulation voltage
4.5 < VLDO_5V < 5.5V, 0 < ILDO_1V5 <
10 mA
1.49
1.55
1.65
V
VLDO_1V5(UVLO_R)
LDO_1V5 Undervoltage lockout
rising
1.44
1.49
1.54
V
VLDO_1V5(UVLO_F)
LDO_1V5 Undervoltage lockout
falling
1.37
1.42
1.47
V
ILDO_3V3(ILIMIT)
V
mA
LDO_1V5 OUTPUT
Undervoltage hysteresis
70
mV
LDO_1V5 current limit
VLDO_1V5 = 0 to 1.2 V, RLDO_1V5_LOAD
=1Ω
VEN(LDO_V5V_R)
EN input level required to turn on
internal LDOs
EN/UVLO rising
VEN(LDO_V5V_F)
EN input level required to turn off
internal LDOs
EN/UVLO falling
0.3
VEN(OPER)
EN input level required to start
operation
EN/UVLO rising Precision EN
1.2
1.25
1.3
V
VEN(STBY)
EN input level required to stop
operation
EN/UVLO falling
1.1
1.15
1.2
V
VEN(HYS)
Hysteresis
ILDO_1V5(ILIMIT)
15
20
28
mA
EN/UVLO
1.05
V
V
100
mV
VEN(CLAMP)
EN input clamp voltage
VEN/UVLO > VEN(CLAMP), 10 µA < IEN/
UVLO < 1 mA
IEN(LEAK)
Leakage current into EN pin
0 V < VEN < 6 V
VCSN/BUS(3V)
VCNS/BUS regulation accuracy at 3V
0 ≤ IOUT ≤ 3A
2.9
VCSN/BUS(5V)
VCNS/BUS regulation accuracy at 5V
0 ≤ IOUT ≤ 3A
4.85
VCSN/BUS(21V)
VCNS/BUS regulation accuracy at 21V 0 ≤ IOUT ≤ 3A
20.48
VCSN/BUS_STP
Output voltage step size (12-bit
DAC)
VDAC Resolution
Resolution of VBUS DAC
IDISCHG
CSN/BUS discharge current when
transitioning to VSafe0V
VCSP = VCSN/BUS. VCSN/BUS = 3V.
Measure current into BUS.
tDISCHG
CSN/BUS discharge time when
transitioning to VSafe5V
VBUS = 21 V (max), CBULK =
220 µF, time to discharge BUS to <
5.5 V (per USB PD specification)
275
ms
tDISCHG
CSN/BUS discharge time when
transitioning to VSafe0V
VBUS = 21 V (max), CBULK =
220 µF, time to discharge BUS to <
0.8 V (per USB PD specification)
650
ms
6
9
12
V
1
µA
3
3.1
V
5
5.15
V
21
21.53
V
OUTPUT VOLTAGE
10
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12
Bits
40
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SLVSGL9 – DECEMBER 2022
Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, VEN/UVLO = 2V unless otherwise stated. (1)
PARAMETER
TEST CONDITION
RDISCHG
Weak discharge resistance on BUS
pin when not sourcing VBUS
EN = 2V; measure BUS to PGND
resistance.
RBUS-GND(PWR)
BUS to GND resistance, RDISCH
disabled, not sourcing VBUS
EN = 2V measure BUS to PGND
resistance.
RBUS-GND(UNPWR)
BUS to GND resistance, unpowered
VIN = EN = 0V measure BUS to
PGND resistance.
MIN
TYP
MAX
UNIT
60
135
kΩ
120
500
kΩ
2
kΩ
CABLE VOLTAGE DROP COMPENSATION
VOUT_CDC
ΔVOUT increase vs IOUT
Gain setting = 0.1V/A: VCSP VCSN/BUS = 50 mV
465
500
535
mV
VOUT_CDC
ΔVOUT increase vs IOUT
Gain setting = 0.1V/A: VCSP VCSN/BUS = 10 mV
85
100
115
mV
VOUT_CDC
ΔVOUT increase vs IOUT
Gain stetting = 0.075V/A: VCSP VCSN/BUS = 50 mV
346
375
404
mV
VOUT_CDC
ΔVOUT increase vs IOUT
Gain setting = 0.075V/A: VCSP VCSN/BUS = 10 mV
61
75
89
mV
VOUT_CDC
ΔVOUT increase vs IOUT
Gain setting = 0.05V/A: VCSP VCSN/BUS = 50 mV
227
250
273
mV
VOUT_CDC
ΔVOUT increase vs IOUT
Gain setting = 0.05V/A: VCSP VCSN/BUS = 10 mV
37
50
63
mV
VOUT_CDC
ΔVOUT increase vs IOUT
Gain setting = 0.025V/A: VCSP VCSN/BUS = 50 mV
109
125
141
mV
VOUT_CDC
ΔVOUT increase vs IOUT
Gain setting = 0.025V/A: VCSP VCSN/BUS = 10 mV
14
25
36
mV
VOUT_CDC
ΔVOUT increase vs IOUT
Gain setting = 0V/A: 0 mV ≤ VCSP VCSN/BUS ≤ 50 mV
-5
20
mV
BUCK-BOOST PEAK CURRENT LIMITS
IPEAK(BOOST)
Boost peak current limit (in boost
mode)
12.3
14.5
16.7
A
IPEAK(BOOST)
Boost peak current limit (in boost
mode)
10.8
12.8
14.7
A
IPEAK(BOOST)
Boost peak current limit (in boost
mode)
9.3
11.0
12.6
A
IPEAK(BOOST)
Boost peak current limit (in boost
mode)
7.9
9.3
10.6
A
IPEAK(BOOST)
Boost peak current limit (in boost
mode)
6.3
7.5
8.6
A
IPEAK(BOOST)
Boost peak current limit (in boost
mode)
4.8
5.7
6.5
A
IPEAK(BUCK)
Buck peak current limit (in buck
mode)
8.2
9.7
11.2
A
IPEAK(BUCK)
Buck peak current limit (in buck
mode)
9.0
10.6
12.1
A
IPEAK(BUCK)
Buck peak current limit (in buck
mode)
9.7
11.4
13.1
A
IPEAK(BUCK)
Buck peak current limit (in buck
mode)
10.4
12.3
14.1
A
IPEAK(BUCK)
Buck peak current limit (in buck
mode)
5.3
6.2
7.2
A
IPEAK(BUCK)
Buck peak current limit (in buck
mode)
6
7.1
8.2
A
IPEAK(BUCK)
Buck peak current limit (in buck
mode)
6.8
8.0
9.1
A
IPEAK(BUCK)
Buck peak current limit (in buck
mode)
7.5
8.8
10.1
A
INEG(BUCK)
Buck negative current limit (in buck
mode)
-4.6
- 3.8
-3
A
OUT CURRENT DAC
IDAC_Resolution
8
Bits
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SLVSGL9 – DECEMBER 2022
Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, VEN/UVLO = 2V unless otherwise stated. (1)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
CURRENT LIMIT
ILIMIT_LO
Current limit accuracy
1 A ≤ IOUT ≤ 3 A, VCSN/BUS < 2.5 V;
RS = 10 mΩ.
-250
250
mA
ILIMIT_LO
Current limit accuracy < 1 A
1 A ≤ IOUT ≤ 3 A, VCSN/BUS ≥ 2.5
V; RS = 10 mΩ
-150
150
mA
ILIMIT_HI
Current limit accuracy > 3 A
IOUT > 3 A, VCSN/BUS < 2.5 V; RS =
10 mΩ
-20
20
%
ILIMIT_HI
Current limit accuracy > 3 A
IOUT > 3 A, VCSN/BUS ≥ 2.5 V; RS =
10 mΩ
-5
5
%
ILIMIT_MIN
Minimum programmable current limit
ICL_STEP
Current limit step size
1
1 A ≤ IOUT ≤ 5 A; RS = 10 mΩ
A
50
mA
FREQUENCY
fSW(1)
Switching Frequency 1
285
300
315
kHz
fSW(2)
Switching Frequency 2
380
400
420
kHz
fSW(3)
Switching Frequency 3
428
450
473
kHz
8
10
12
%
-12
-10
-8
%
FREQUENCY DITHER
Positive frequency deviation during
dither
FSSS
Negative frequency deviation during
dither
FSSS_MOD
Modulation frequency of dither
DITHER_FREQ = 0
9
10
11
kHz
FSSS_MOD
Modulation frequency of dither
DITHER_FREQ = 1
22.5
25
27.5
kHz
OVERVOLTAGE PROTECTION
VCSN/BUS_OVP_R
Fixed output overvoltage threshold
at CSN/BUS pin
22.0
23
24
V
VCSN/BUS_OVP_F
Falling
20.5
21.5
22.5
V
Hysteresis
1.5
V
POWER SWITCHES
RDS(ON)
M1
VIN = 12V; (VBOOT1 - VSW1) = 4.5V;
ISW1 = -1 A
4.5
mΩ
RDS(ON)
M2
VIN = 12V; ISW1 = 1 A
20
mΩ
RDS(ON)
M4
VIN = 12V; ISW2 = 1 A
6
mΩ
RDS(ON)
M3 + M5
VIN = VOUT = 12V: (VBOOT2 - VSW2) =
4.5V, ISW2 = -1 A
18
mΩ
VUV_BOOT1_R
BOOT1 to SW1 rising UVLO
threshold
3.5
4
4.4
V
VUV_BOOT1_F
BOOT1 to SW1 falling UVLO
threshold
2.9
3.4
3.7
V
BOOT1 to SW1 UVLO hysteresis
680
mV
VOV_BOOT1_R
BOOT1 to SW1 rising OVP
threshold
4.6
5.3
5.9
V
VOV_BOOT1_F
BOOT1 to SW1 falling OVP
threshold
4.3
5
5.6
V
BOOT 1 OVP hysteresis
250
300
350
mV
VUV_BOOT2_R
BOOT2 to SW2 rising UVLO
threshold
3.5
4
4.4
V
VUV_BOOT2_F
BOOT2 to SW2 falling UVLO
threshold
2.9
3.4
3.7
V
BOOT2 to SW2 UVLO hysteresis
680
mV
VOV_BOOT2_R
BOOT2 to SW1 rising OVP
threshold
4.6
5.3
5.9
V
VOV_BOOT2_F
BOOT2 to SW1 falling OVP
threshold
4.3
5
5.6
V
BOOT2 OVP hysteresis
250
300
350
mV
BUCK-BOOST CHARACTERISTICS
12
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SLVSGL9 – DECEMBER 2022
Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, VEN/UVLO = 2V unless otherwise stated. (1)
PARAMETER
tSS
(1)
TEST CONDITION
MIN
TYP
Soft-start time
MAX
6
UNIT
ms
All minimum and maximum limits are specified by correlating the electrical characteristics to process and temperature variations and
applying statistical processcontrol.
7.7 CC Cable Detection Parameters
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Type-C Source (Rp pull-up)
VOC_3.3
Unattached Px_CCy open circuit
voltage while Rp enabled, no load
RCC = 47 kΩ
1.85
V
VOC_5
Attached Px_CCy open circuit
voltage while Rp enabled, no load
RCC = 47 kΩ
2.95
V
IRev
Unattached reverse current on
Px_CCy
VCCy = 5.5V, VCCx = 0V, measure
current into CCy
IRpStd
current source - Standard
0 < VCCy < 1.0 V, measure ICCy
64
IRp1.5
current source - 1.5A
0 < VCCy < 1.5 V, measure ICCy
IRp3.0
current source - 3.0A
0 < VCCy < 2.45 V, measure ICCy
10
µA
80
96
µA
166
180
194
µA
304
330
356
µA
Type-C Sink (Rd pull-down)
RSNK
Rd pulldown resistance
0V ≤ VPx_CCy ≤ 2.1 V, measure
resistance on Px_CCy
4.6
5.6
kΩ
RVCONN_DIS
VCONN discharge resistance
0V ≤ VPx_CCy ≤ 5.5 V, measure
resistance on Px_CCy
4.0
6.6
kΩ
Common (Source and Sink)
tCC
deglitch time for comparators on
Px_CCy, this applies for VSRC1,
VSRC2, VSRC3, VSNK1, VSNK2,
VSNK3, and VSNK4.
2.56
ms
7.8 CC VCONN Parameters
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN = 2 V unless otherwise stated.
PARAMETER
RPP_CABLE
ILIMVC
Rdson of the VCONN path
short circuit current limit
TEST CONDITIONS
MIN
TYP
VLDO_5V = 5V, IL = 200 mA,
measure resistance from
LDO_5V to Px_CCy
MAX
1.2
UNIT
Ω
setting 0, VLDO_5V = 5V,
RL=10mΩ , measure IPx_CCy
30
50
70
setting 1, VLDO_5V = 5V,
RL=10mΩ , measure IPx_CCy
235
275
315
-1
0
10
µA
mA
ICCyLKG
Leakage current into Px_Cy
pins
VCONN disabled, TJ ≤
125 oC, VPx_CCy = 5.5 V,
measure IPx_CCy
VVC_OVP
Over-voltage protection
threshold for Px_CCy
VLDO_5V rising
5.6
5.9
6.2
V
VVC_RCP
Reverse current protection
threshold for Px_CCy,
sourcing VCONN through
CCx
VLDO_5V = 5 V, VCCx rising,
setting 1.
230
310
390
mV
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SLVSGL9 – DECEMBER 2022
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN = 2 V unless otherwise stated.
PARAMETER
TEST CONDITIONS
VVC_RCP
Reverse current protection
threshold for Px_CCy,
sourcing VCONN through
CCx
tPP_CABLE_FSD
Time to disable Px_Cy
VCONN after VLDO_5V >
CL=0
VVC_OVP or VCCx - VLDO_5V >
VVC_RCP
tPP_CABLE_off
from disable signal to
Px_CCy at 10% of final
value
tiOS_PP_CABLE
tiOS_PP_CABLE
VLDO_5V = 5 V, VCCx rising,
setting 2.
IL = 200 mA, VLDO_5V = 5V,
CL=0
MIN
TYP
MAX
UNIT
60
155
250
mV
1.5
100
225
µs
300
µs
External VLDO_5V = 5V, for
response time to short circuit short circuit RL = 10mΩ. Set
VCONILIM = 1.
2
µs
Internal VLDO_5V = 5V, for
response time to short circuit short circuit RL = 10mΩ. Set
VCONILIM = 0.
0.3
µs
7.9 CC PHY Parameters
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN = 2V unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
1.125
1.2
V
Transmitter
VTXHI
Transmit high voltage on
Px_CCy
Standard External load
1.05
VTXLO
Transmit low voltage on
Px_CCy
Standard External load
-75
75
mV
ZDRIVER
Transmit output impedance
while driving the CC line
using Px_CCy
measured at 750 kHz
33
75
Ω
tRise
Rise time. 10 % to 90
% amplitude points on
Px_CCy, minimum is under
an unloaded condition.
Maximum set by TX mask
CPx_CCy= 520 pF
300
ns
tFall
Fall time. 90 % to 10
% amplitude points on
Px_CCy, minimum is under
an unloaded condition.
Maximum set by TX mask
CPx_CCy= 520 pF
300
ns
VPHY_OVP
OVP detection threshold for
USB PD PHY.
Initially VCC1 ≤ 5.5 V and
VCC2 ≤ 5.5 V, then VCCx
rises.
5.5
Receiver input impedance
on Px_CCy
Does not include pull-up
or pulldown resistance from
cable detect. Transmitter is
Hi-Z.
CCC
Receiver capacitance on
Px_CCy(1)
Capacitance looking into the
CC pin when in receiver
mode
VRX_SNK_R
Rising threshold on Px_CCy
sink mode (rising)
for receiver comparator
499
VRX_SRC_R
Rising threshold on Px_CCy
source mode (rising)
for receiver comparator
784
8.5
V
Receiver
ZBMCRX
14
(2)
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1
MΩ
120
pF
525
551
mV
825
866
mV
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SLVSGL9 – DECEMBER 2022
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN = 2V unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VRX_SNK_F
Falling threshold on Px_CCy
sink mode (falling)
for receiver comparator
230
250
270
mV
VRX_SRC_F
Falling threshold on Px_CCy
source mode (falling)
for receiver comparator
523
550
578
mV
(1)
(2)
CCC includes only the internal capacitance on a Px_CCy pin when the pin is configured to be receiving BMC data. External
capacitance is needed to meet the required minimum capacitance per the USB-PD Specifications (cReceiver). Therefore, TI
recommends adding CPx_CCy externally.
Guaranteed, but not production tested.
7.10 Thermal Shutdown Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TSD_BB
Temperature shutdown
threshold
Temperature rising
TSD_HYS
Temperature shutdown
hysteresis
hysteresis
TSD_PA_VCONN
Temperature shutdown
threshold
Temperature rising
TSD_HYS
Temperature shutdown
hysteresis
hysteresis
TSD_PA_VBUS_DISCH
Temperature shutdown
threshold
Temperature rising
TSD_HYS
Temperature shutdown
hysteresis
hysteresis
TSD_LDO5V
Temperature shutdown
threshold
Temperature rising
TSD_HYS
Temperature shutdown
hysteresis
hysteresis
MIN
TYP
MAX
UNIT
160
167
175
°C
18
152
166
°C
179
20
155
166
°C
177
20
165
177
°C
°C
°C
188
15
°C
°C
7.11 Oscillator Characteristics
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated.
PARAMETER
FOSC(100K)
TEST CONDITIONS
100KHz oscillator
Trimmed.
FOSC(24M)
24MHz oscillator
Trimmed. 0 ℃ ≤ TA ≤
70 ℃
FOSC(24M)
24MHz oscillator
Trimmed. -40 ℃ ≤ TA ≤
150 ℃
MIN
TYP
MAX
89
103
111
UNIT
kHz
23.64
24.2
24.36
MHz
23.3
24.2
24.5
MHz
7.12 ADC Characteristics
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
LSB
least significant bit
3.6V max scaling, voltage
divider of 3
LSB
least significant bit
25.2V max scaling, voltage
divider of 21
98
mV
LSB
least significant bit
(VCSP - VCSN/BUS)= 10 mV,
30 mV
27
mA
EG
Gain error
0 A ≤ ITVSP ≤ 0.9 mA
–2.7
14
mV
2.7
%
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SLVSGL9 – DECEMBER 2022
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
EG
Gain error
0.05V ≤ VGPIOx ≤
3.6V, VGPIOx ≤ VLDO_3V3
–2.7
2.7
%
EG
Gain error
2.7V ≤ VLDO_3V3 ≤ 3.6V
–2.4
2.4
%
EG
Gain error
0.6V ≤ VPx_VBUS ≤ 22V
–2.4
2.4
%
EG
Gain error, current sense
(VCSP - VCSN/BUS)= 10 mV,
30 mV
–2.4
2.4
%
EG
Gain error
VIN
–2.4
2.4
%
EG
Gain error
4.3 V ≤ VLDO_5V ≤ 5.5V
–2.4
2.4
%
VOS(E)
Offset error(1)
0 A ≤ ITVSP ≤ 0.9 mA
–4.1
15
mV
VOS(E)
Offset error(1)
0.05V ≤ VGPIOx ≤
3.6V, VGPIOx ≤ VLDO_3V3
–4.1
4.1
mV
VOS(E)
Offset error(1)
2.7V ≤ VLDO_3V3 ≤ 3.6V
-4.1
4.1
mV
VOS(E)
Offset error(1)
0.6V ≤ VPx_VBUS ≤ 22V
-4.1
4.1
mV
VOS(E)
Offset error(1)
(VCSP - VCSN/BUS)= 10 mV,
30 mV
-4.5
4.5
mA
VOS(E)
Offset error(1)
VIN
-4.1
4.1
mV
VOS(E)
Offset error(1)
4.3 V ≤ VLDO_5V ≤ 5.5V
-4.1
4.1
mV
(1)
The offset error is specified after the voltage divider.
7.13 TVS Parameters
VIN = 13.5V, EN = 2V. over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
5.3
5.5
5.7
V
1
µA
TVSP
VTVSP_PU
Pull up voltage for
configuration (1)
Decode 0
Device configuration decode RTVS = Open
Decode 1
Device configuration decode RTVS = 93.1 kΩ
56.9
61.2
µA
Decode 2
Device configuration decode RTVS = 47.5 kΩ
111.6
120
µA
Decode 3
Device configuration decode RTVS = 29.4 kΩ
180.3
193.9
µA
Decode 4
Device configuration decode RTVS = 20.0 kΩ
265
285
µA
Decode 5
Device configuration decode RTVS = 14.7 kΩ
360.5
387.8
µA
Decode 6
Device configuration decode RTVS = 11.0 kΩ
481.8
518.2
µA
Decode 7
Device configuration decode RTVS = 8.45 kΩ
627.2
674.6
µA
Decode 8
Device configuration decode RTVS = 6.65 kΩ
797
857.1
µA
ITVSP(ILIMIT)
Current limit when TVSP is
sourcing.
1.83
mA
(1)
0 < ITVSP < 1 mA
CTVSP = open; RTVSP = open.
All Px_Dy = 0 V and Px_CCy
= 0 V. VTVSP = 0 V. Measure
current flowing out of TVSP.
1.1
1.44
For proper device configuration, VIN must be ≥ 7.6 V at time of configuration read.
7.14 Input/Output (I/O) Characteristics
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GPIO0-9 (Inputs) (1)
VIH
GPIOx high-Level input voltage
VIL
GPIOx low-level input voltage
16
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V
0.54
V
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SLVSGL9 – DECEMBER 2022
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated.
PARAMETER
TEST CONDITIONS
GPIOx input hysteresis voltage
MIN
TYP
MAX
0.09
II(LEAKAGE)
GPIOx leakage current
VGPIOx = 5.5 V
–8
RPU
GPIOx internal pull-up
pull-up enabled
50
RPD
GPIOx internal pull-down
pull-down enabled
50
tDG
GPIOx input deglitch
UNIT
V
8
µA
100
150
kΩ
100
150
kΩ
20
ns
GPIO 2, 3, 5, 6 (Outputs)
VOH
GPIOx output high voltage
IGPIOx= -5mA
VOL
GPIOx output low voltage
IGPIOx=5mA
GPIO 0, 1, 4, 7, 8, 9 (Outputs)
2.9
V
0.4
V
(2)
VOH
GPIOx output high voltage
IGPIOx= -2mA
2.9
V
VOL
GPIOx output low voltage
IGPIOx=2mA
ϕ shift_00
GPIOx when configured as phase
shifted DC/DC fsw clock output
Phase difference between fsw
and GPIO6 when configured as
SYNC(O).
0
degrees
ϕ shift_90
GPIOx when configured as phase
shifted DC/DC fsw clock output
Phase difference between fsw
and GPIO6 when configured as
SYNC(O).
90
degrees
ϕ shift_120
GPIOx when configured as phase
shifted DC/DC fsw clock output
Phase difference between fsw
and GPIO6 when configured as
SYNC(O).
120
degrees
ϕ shift_180
GPIOx when configured as phase
shifted DC/DC fsw clock output
Phase difference between fsw
and GPIO6 when configured as
SYNC(O).
180
degrees
0.4
V
SYNC OUT
SYNC IN
fSYNC(300kHz)
Valid external clock frequency
(fSW_internal = 300kHz)
250
353
kHz
fSYNC(400kHz)
Valid external clock frequency
(fSW_internal = 400kHz)
334
470
kHz
fSYNC(450kHz)
Valid external clock frequency
(fSW_internal = 450kHz)
376
530
kHz
16
µA
8
V
LSGD
ILSGD_ON
NFET driver sourcing current
0 V ≤ VCSN/BUS ≤ 21 V; 0 V ≤
(VLSGD - VCSN/BUS) ≤ 4 V
VLSGD_ON
Sourcing voltage while enabled
(VLSGD - VCSN/BUS)
0 V ≤ VCSN/BUS ≤ 21 V; ILSGD ≤
4 µA. Measure voltage between
LSGD and CSN/BUS.
RLSGD_OFF
Sinking resistance when disabled
VLSGD = VCSN/BUS = 5 V
(1)
(2)
10
13
6
160
300
kΩ
GPIO9 is normally configured as I2C_IRQ1m (master): input pin. I2C specification requires use of external pullup resistor. Input
thresholds (VIH; VIL) leakage current (II(LEAKAGE))and deglitch timing (tDG) specifications are apply when used as I2C_IRQ1m. Internal
pullup and pulldown resistors are not used during this mode of operation.
GPIO9 or GPIO1 may be configured as I2C_IRQ2s (slave): open-drain output pin. I2C specification requires use of external pullup
resistor. Output threshold (VOL) applies. Internal pullup and pulldown resistors are not used during this mode of operation.
7.15 BC1.2 Characteristics
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
200
Ω
BC1.2 RESISTANCES
RDCP_DAT
Dedicated Charging Port Resistance
between Px_DP and Px_DM
VPx_DP = 0.6 V, VPx_DM = 0V, measure
DP to DM shorted resistance
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SLVSGL9 – DECEMBER 2022
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RDM_DWN_15k Px_DM line pulldown resistance
VPx_DM = 3.6V
12
15
18
kΩ
RDM_DWN_20k Px_DM line pulldown resistance
VPx_DM = 3.6V
14.25
19.53
24.8
kΩ
V
DIVIDER MODES
V2.7V
Output Voltage on DPy pin
No load on DPy pin
2.57
2.7
2.83
V2.7V
Output Voltage on DMy pin
No load on DMy pin
2.57
2.7
2.83
V
R2.7V
Output Impedance on DPy
5µA pulled from DPy pin
24
30
36
kΩ
R2.7V
Output Impedance on DMy
5µA pulled from DMy pin
V1.2V
Output Voltage on DMy
No load on DMy
R1.2V
Output Impedance on DMy
5µA pulled from DMy
24
30
36
kΩ
1.12
1.2
1.28
V
80
102
130
kΩ
0.25
0.325
0.4
V
1.8
2
2.2
V
8.5
V
HVDCP THRESHOLD VOLTAGES
VDAT_REF
Data detection voltage on DP or DM
pin
VSEL_REF
Output selection voltage DP or DM pin
DP AND DM OVERVOLTAGE PROTECTION
VDy_OVP
OVP detection threshold for USB
Px_DP and Px_DM pins
Initially VPxDy ≤ 3.6 V, then
VPx_Dy rises.
5.5
7.16 I2C Requirements and Characteristics
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated. VDD = I2C pullup voltage (3.3 V or 1.8 V)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
0.54
V
I2C_IRQ1s, I2C_IRQ2
I2C_IRQ1m
SDA and SCL Characteristics (Standard, Fast, Fast-mode Plus)
VIL
Input low signal
VIH
Input high signal
1.3
V
VDD = 3.3 V INPUT LOGIC THRESHOLDS
VIL
Input low signal
0.9
V
VIH
Input high signal
2.31
V
VHYS
Input hysteresis
0.165
V
VOL
Output low voltage
VDD = 1.8V, IOL=2 mA
0.36
VOL
Output low voltage
VDD = 3.3V, IOL=3 mA
0.4
IOL
Max output low current
VOL=0.4 V
12
ILEAK
Input leakage current
Voltage on pin = 3.3V
–5
CI
pin capacitance (internal)
Cb
Capacitive load for each bus line
(external). Applies in Standardmode and Fast-mode.
Cb
Capacitive load for each bus line
(external). Applies in Fast-mode
Plus.
V
mA
5
µA
10
pF
400
pF
550
pF
50
ns
100
kHz
COMMON TIMING
tSP
I2C pulse width surpressed
SDA and SCL Characteristics (Standard Mode)
fSCLS
Clock frequency (slave)
VDD = 1.8V or 3.3V
tHD;STA
Start or repeated start condition
hold time
VDD = 1.8V or 3.3V
18
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SLVSGL9 – DECEMBER 2022
Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated. VDD = I2C pullup voltage (3.3 V or 1.8 V)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tLOW
SCL Clock low time
VDD = 1.8V or 3.3V
4.7
µs
tHIGH
SCL Clock high time
VDD = 1.8V or 3.3V
4
µs
tSU;STA
Start or repeated start condition
setup time
VDD = 1.8V or 3.3V
4.7
µs
tHD;DAT
Serial data hold time (1)
VDD = 1.8V or 3.3V
0 (2)
tSU;DAT
Serial data setup time
VDD = 1.8V or 3.3V
250
tr
VDD = 1.8V or 3.3V; RPU = 2.8 kΩ;
Rise time of SCL and SDA signals Cb = 400pF; measure 0.3 × VDD to
0.7 × VDD
tof
Output fall time from VIH(MIN) to
VIL(MAX)
- (3)
ns
ns
1000
ns
VDD = 1.8V or 3.3V; measure 0.3 ×
VDD to 0.7 × VDD
250 (4)
ns
Fall time of SCL and SDA signals
VDD = 1.8V, RPU = 2.8 kΩ; 10 pF ≤
Cb ≤ 400 pF
300
ns
Fall time of SCL and SDA signals
(2) (4) (5)
VDD = 3.3V, RPU = 2.8 kΩ; 10 pF ≤
Cb ≤ 400 pF
300
ns
tSU;STO
Stop condition setup time
VDD = 1.8V or 3.3V
4
µs
tBUF
Bus free time between stop and
start
VDD = 1.8V or 3.3V
4.7
µs
tVD;DAT
Valid data time (6)
Transmitting Data; VDD = 1.8V or
3.3V, SCL low to SDA output valid
3.45 (3)
µs
tVD;ACK
Valid data time of ACK condition
Transmitting Data; VDD = 1.8V or
3.3V, ACK signal from SCL low to
SDA valid
3.45 (3)
µs
tf
tf
(2) (4) (5)
SDA and SCL Characteristics (Fast Mode)
fSCLS
Clock frequency (slave)
VDD = 1.8V or 3.3V
tHD;STA
Start or repeated start condition
hold time
400
VDD = 1.8V or 3.3V
0.6
µs
tLOW
SCL Clock low time
VDD = 1.8V or 3.3V
1.3
µs
tHIGH
SCL Clock high time
VDD = 1.8V or 3.3V
0.6
µs
tSU;STA
Start or repeated start condition
setup time
VDD = 1.8V or 3.3V
0.6
µs
tHD;DAT
Serial data hold time (1)
VDD = 1.8V or 3.3V
0 (2)
tSU;DAT
Serial data setup time
VDD = 1.8V or 3.3V
100 (7)
tr
VDD = 1.8V or 3.3V; RPU = 850 Ω;
Rise time of SCL and SDA signals Cb = 400 pF; measure 0.3 × VDD to
0.7 × VDD
tof
Output fall time from VIH(MIN) to
VIL(MAX)
tof
- (3)
kHz
ns
ns
20
300
ns
VDD = 1.8V; measure 0.3 × VDD to
0.7 × VDD
6.55
250 (4)
ns
Output fall time from VIH(MIN) to
VIL(MAX)
VDD = 3.3V; measure 0.3 × VDD to
0.7 × VDD
12
250 (4)
ns
Fall time of SCL and SDA signals
VDD = 1.8V; RPU = 850 Ω; 10 pF ≤
Cb ≤ 400 pF
6.55
300
ns
Fall time of SCL and SDA signals
(2) (4) (5)
VDD = 3.3V; RPU = 850 Ω; 10 pF ≤
Cb ≤ 400 pF
12
300
ns
tSU;STO
Stop condition setup time
VDD = 1.8V or 3.3V
0.6
µs
tBUF
Bus free time between stop and
start
VDD = 1.8V or 3.3V
1.3
µs
tVD;DAT
Valid data time (6)
Transmitting Data; VDD = 1.8V or
3.3V, SCL low to SDA output valid
tf
tf
(2) (4) (5)
0.9 (3)
µs
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Typical values correspond to TJ = 25°C. Minimum and maximumlimits apply over the –40°C to 150°C junction temperature
range unless otherwise stated.VIN = 13.5 V, EN =2 V, unless otherwise stated. VDD = I2C pullup voltage (3.3 V or 1.8 V)
PARAMETER
tVD;ACK
(1)
(2)
(3)
(4)
(5)
(6)
(7)
20
TEST CONDITIONS
Valid data time of ACK condition
Transmitting Data; VDD = 1.8V or
3.3V, ACK signal from SCL low to
SDA (out) low
MIN
TYP
MAX
UNIT
0.9 (3)
µs
tHD;DAT = the data hold time that is measured from the falling edge of SCL, applies to data in transmission and the acknowledge.
A device must internally provide a hold time of at least 300 ns for the SDA signal (with respect to the VIH(MIN) of the SCL signal) to
bridge the undefined region of the falling edge of SCL.
The maximum tHD;DAT could be 3.45 µs and 0.9 µs for Standard-mode and Fast-mode, but must be less than the maximum tVD;DAT or
tVD;ACK by a transition time. This maximum must only be met if the device does not stretch the LOW period (tLOW) of the SCL signal. If
the clock stretches the SCL, the data must be valid by the setup time before it releases the clock.
The maximum tf for the SDA and SCL bus lines is stated in these tables as 300 ns is longer than the specified maximum tof for the
output stages (250 ns). This allows series protection resistors (RS) to be connected between the SDA and SCL pins and the SDA and
SCL bus lines without exceeding the maximum specified tf.
In Fast-mode Plus, fall time is specified the same for both ouput stage and bus timing. If series resistors (RS) are used, designers
should allow for this when considering bus timing.
tVD;DAT = time for data signal from SCL LOW to SDA output (HIGH or LOW, depending on which one is worse).
A Fast-mode I2C-bus device can be used in a Standard-mode I2C-bus system, but the requirement tSU;DAT 250 ns must then be met.
This will automatically be the case if the device does not stretch the LOW period of the SCL signal. If such a device does stretch the
LOW period of the SCL signal, it must output the next data bit to the SDA line tr(max) + tSU;DAT = 1000 + 250 = 1250 ns (according to the
Standard-mode I2C-bus specification) before the SCL line is released. Also the acknowledge timing must meet this set-up time.
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SLVSGL9 – DECEMBER 2022
7.17 Typical Characteristics
At VIN = 12 V, fsw = 400 kHz, unless otherwise stated.
IQ VIN Shutdown Current (A)
60
55
50
45
40
-40
-20
0
20
40
60
80 100
Temperature (C)
120
140
160
EN = 2 V
EN = 0 V
USB Port(s) not
connected
Figure 7-1. IQ VIN Shutdown Current vs Temperature
Figure 7-2. IQ VIN Standby Current vs Temperature
9
8.7
VEN(CLAMP)
8.4
8.1
VIN = 6.8 V
VIN = 13.5 V
VIN = 18 V
7.8
7.5
7.2
-40
-20
0
20
40
60
80
Temperature (C)
100
120
140
Figure 7-3. ENABLE/UVLO Thresholds vs Temperature
Figure 7-4. EN Clamp Voltage vs Temperature
Figure 7-5. EN Leakage Current vs Temperature
Figure 7-6. VIN(UVLO) vs Temperature
160
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SLVSGL9 – DECEMBER 2022
7.17 Typical Characteristics (continued)
At VIN = 12 V, fsw = 400 kHz, unless otherwise stated.
19.5
4.71
4.7
4.69
4.68
Voltage (V)
Voltage (V)
19
18.5
4.67
4.66
4.65
4.64
4.63
VIN
VIN
VIN
VIN
4.62
RISING
FALLING
18
-40
-20
0
20
40
60
80
Temperature (C)
100
120
140
4.61
4.6
-40
160
0
20
40
60
80
Temperature (C)
6.8 V, 125 mA
6.8 V, 0 mA
13.5 V, 0 mA
18 V, 0 mA
100
120
140
Figure 7-7. VIN(OVP) vs Temperature
Figure 7-8. LDO_5V vs VIN and Temperature
Figure 7-9. LDO_5V Current Limit vs VIN and Temperature
Figure 7-10. LDO_3V3 vs VIN and Temperature
58
1.59
1.58
1.57
55
Voltage (V)
ILIMIT (mA)
56
54
53
1.56
1.55
1.54
1.53
52
VIN
VIN
VIN
VIN
1.52
51
50
-40
160
1.6
VIN = 6.8 V
VIN = 13.5 V
VIN = 18 V
57
1.51
-20
0
20
40
60
80
Temperature (C)
100
120
140
160
Figure 7-11. LDO_3V3 Current Limit vs VIN and Temperature
22
-20
=
=
=
=
1.5
-40
-20
0
20
40
60
80
Temperature (C)
100
=
=
=
=
6.8 V, 10 mA
6.8 V, 0 mA
13.5 V, 0 mA
18 V, 0 mA
120
140
160
Figure 7-12. LDO_1V5 vs VIN and Temperature
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SLVSGL9 – DECEMBER 2022
7.17 Typical Characteristics (continued)
At VIN = 12 V, fsw = 400 kHz, unless otherwise stated.
22
ILIMIT (mA)
21.5
21
20.5
20
19.5
-40
VIN = 6.8 V
VIN = 13.5 V
VIN = 18 V
-20
0
20
40
60
80
Temperature (C)
100
120
140
160
Figure 7-13. LDO_1V5 Current Limit vs VIN and Temperature
Figure 7-14. VTVSP_PU vs Temperature
40
1.51
35
30
RDS(ON) (m)
ITVSP(ILIMIT) (mA)
1.5
1.49
1.48
25
M1
M2
M4
M3+M5
20
15
10
1.47
5
1.46
-40
-20
0
20
40
60
80
Temperature (C)
100
120
140
160
0
-40
-20
0
20
40
60
80 100
Temperature (C)
120
140
160
Figure 7-15. ITVSP(ILIMIT) vs Temperature
Figure 7-16. Buck-Boost Power FET RDS(ON) vs Temperature
Figure 7-17. Boost Peak Current Limit vs Temperature (upper
settings)
Figure 7-18. Boost Peak Current Limit vs Temperature (lower
settings)
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SLVSGL9 – DECEMBER 2022
7.17 Typical Characteristics (continued)
At VIN = 12 V, fsw = 400 kHz, unless otherwise stated.
Figure 7-19. Buck Peak Current Limit vs Temperature (upper
settings)
Figure 7-20. Buck Peak Current Limit vs Temperature (lower
settings)
-3.8
-3.85
INEG(BUCK) (A)
-3.9
-3.95
-4
-4.05
-4.1
-4.15
-40
-20
0
20
40
60
80
Temperature (C)
100
120
140
160
Figure 7-21. Buck Negative Current Limit vs Temperature
Figure 7-22. BOOTx UVLO vs Temperature
5.6
1.4
5.55
1.2
5.5
VOV_BOOT (V)
5.4
VOV_BOOT1_R
VOV_BOOT1_F
VOV_BOOT2_R
VOV_BOOT2_F
5.35
5.3
5.25
fsw variation (%)
1
5.45
0.8
0.6
0.4
0.2
5.2
0
5.15
-0.2
5.1
-40
-20
0
20
40
60
80
Temperature (C)
100
120
140
160
-0.4
-40
-20
Figure 7-23. BOOTx OVP vs Temperature
0
20
40
60
80
Temperature (C)
100
120
140
160
Percentage Change from Nominal
Figure 7-24. Buck-Boost Switching Frequency Variation vs
Temperature
24
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SLVSGL9 – DECEMBER 2022
7.17 Typical Characteristics (continued)
At VIN = 12 V, fsw = 400 kHz, unless otherwise stated.
VSNS = (VCSP - VCSN) (mV)
11.5
VSNS = 10 mV, VBUS = 3 V
VSNS = 10 mV, VBUS = 12 V
VSNS = 10 mV, VBUS = 20 V
11
10.5
10
9.5
9
8.5
-40
-20
Figure 7-25. fSW Dither Modulation Frequency vs Temperature
0
20
40
60
80
Temperature (C)
100
120
140
160
Target VSNS for Current Limit = 10 mV
Current Limiting Engaged
Figure 7-26. Current Loop Regulation Voltage vs VBUS and
Temperature
52.5
VSNS = 30 mV, VBUS = 3 V
VSNS = 30 mV, VBUS = 12 V
VSNS = 30 mV, VBUS = 20 V
31
30.5
30
29.5
29
VSNS = 50 mV, VBUS = 3 V
VSNS = 50 mV, VBUS = 12 V
VSNS = 50 mV, VBUS = 20 V
52
VSNS = (VCSP - VCSN) (mV)
VSNS = (VCSP - VCSN) (mV)
31.5
51.5
51
50.5
50
49.5
49
48.5
48
28.5
-40
-20
0
20
40
60
80
Temperature (C)
100
120
140
47.5
-40
160
-20
Target VSNS for Current Limit = 30 mV
Current Limiting Engaged
20
40
60
80
Temperature (C)
100
120
140
160
Target VSNS for Current Limit = 50 mV
Current Limiting Engaged
Figure 7-27. Current Loop Regulation Voltage vs VBUS and
Temperature
Figure 7-28. Current Loop Regulation Voltage vs VBUS and
Temperature
150
500
Gain
Gain
Gain
Gain
=
=
=
=
0.025V/A;
0.050V/A;
0.075V/A;
0.100V/A;
VSNS =
VSNS =
VSNS =
VSNS =
10
10
10
10
mV
mV
mV
mV
100
50
Gain = 0.025V/A; VSNS = 50 mV
Gain = 0.050V/A; VSNS = 50 mV
450
VOUT vs (VCSP - VCSN) (mV)
VOUT vs (VCSP - VCSN) (mV)
0
400
350
300
250
200
150
0
-40
-20
0
20
40
60
80
Temperature (C)
100
120
140
Figure 7-29. Cable Voltage Droop Compensation vs
Temperature
160
100
-40
-20
0
20
40
60
80
Temperature (C)
100
120
140
160
Figure 7-30. Cable Voltage Droop Compensation vs
Temperature
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7.17 Typical Characteristics (continued)
At VIN = 12 V, fsw = 400 kHz, unless otherwise stated.
25
500
20
400
350
VBUS (V)
VOUT vs (VCSP - VCSN) (mV)
450
300
250
15
10
200
5
150
100
-40
Gain = 0.075V/A; VSNS = 50 mV
Gain = 0.100V/A; VSNS = 50 mV
-20
0
20
40
60
80
Temperature (C)
100
120
140
160
Figure 7-31. Cable Voltage Droop Compensation vs
Temperature
0
0
0.5
VIN = 13.5 V
1
1.5
2
IBUS (A)
VBUS = 20 V (CV)
2.5
3
3.5
ILIMIT = 3.15 A (CC)
Figure 7-32. Constant Voltage to Constant Current Transition
Figure 7-34. VBUS Discharge Current vs Temperature
IBUS = 0 A
Figure 7-33. Buck-boost Output Voltage Regulation vs
Temperature
24.45
Frequency (MHz)
24.35
24.25
24.15
24.05
23.95
-40
-20
0
20
40
60
80
Temperature (C)
100
120
140
Figure 7-35. (M0) 24 MHz Oscillator vs Temperature
26
160
Figure 7-36. (M0) 100 kHz Oscillator vs Temperature
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7.17 Typical Characteristics (continued)
At VIN = 12 V, fsw = 400 kHz, unless otherwise stated.
Figure 7-37. Type-C Cable Detect: IRp vs Temperature
Figure 7-38. Type-C Cable Detect: RSNK vs Temperature
Figure 7-39. VCONN Power Path: RDS(ON) vs Temperature
Figure 7-40. VCONN Power Path: Current Limit vs Temperature
Figure 7-41. Type-C Cable Detect & VCONN: Over-voltage
Protection Thresholds vs Temperature
Figure 7-42. USB BC1.2: DP to DM Shorting Resistance,
RDCP_DAT
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7.17 Typical Characteristics (continued)
At VIN = 12 V, fsw = 400 kHz, unless otherwise stated.
23
22
Resistance (k)
21
20
19
18
17
16
-40
Figure 7-43. USB BC1.2: DM to AGND 15 kΩ Resistance,
RDM_DWN_15k
-20
0
20
40
60
80
Temperature (C)
100
120
140
Figure 7-44. USB BC1.2: DM to AGND 20 kΩ Resistance,
RDM_DWN_20k
4
3.5
Output Voltage (V)
3
2.5
VOH
VOL
2
1.5
1
0.5
0
-40
-20
Figure 7-45. USB BC1.2: DP and DM Pin Over-voltage
Protection Thresholds vs Temperature
0
20
40
60
80
Temperature (C)
100
120
140
GPIO 0, 1, 4, 7, 8, 9
IO = ±2 mA
Figure 7-46. GPIO: Output Voltage vs Output Current and
Temperature
Figure 7-48. GPIO: Input Voltage Thresholds vs Temperature
GPIO 2, 3, 5, 6
IO = ±5 mA
Figure 7-47. GPIO: Output Voltage vs Output Current and
Temperature
28
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8 Parameter Measurement Information
tf
SDA
tr
tSU;DAT
70 %
30 %
70 %
30 %
cont.
tHD;DAT
tf
tVD;DAT
tHIGH
tr
70 %
30 %
SCL
70 %
30 %
70 %
30 %
tHD;STA
70 %
30 %
cont.
tLOW
9th clock
1 / fSCL
S
1st clock cycle
tBUF
SDA
tSU;STA
tHD;STA
tVD;ACK
tSP
tSU;STO
70 %
30 %
SCL
Sr
P
S
9th clock
Figure 8-1.
I2C
002aac938
Slave Interface Timing
VPU
From Output
Under Test
1 M
PU
1M
CL
Push-Pull Load Circuit
V 5.5 V
RPU
From Output
Under Test
CL
1.65 V
Open-Drain Load Circuit
Internal Signal from M0
Internal Signal from M0
tprop_delay
90%
GPIOx Output
VOH
90%
GPIOx Output
10%
10%
tr
tprop_delay_z
tprop_delay
90%
90%
10%
VOL
tf
tf
GPIO Push-Pull Output Timing Diagram
10%
VPU
0V
tr
GPIO Open-Drain Output Timing Diagram
GPIO Input
tsu
th
VOH
Internal Signal to M0
VOL
GPIO Input Timing Diagram
Figure 8-2. GPIO Output Timing Diagram (rise/fall vs capacitive load)
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tFALL_EP
tRISE_EP
VOH
90%
10%
VOL
90%
10%
Figure 8-3. USB Endpoint Transmitter Rise and Fall Time
V OH
Differential
Data Lines
VCRS
VCRS
VOL
(a) Output Crossover Voltage
2.0 V
Differential
Data Lines
VCRS
VCRS
0.8 V
(b) Input Crossover Voltage
Figure 8-4. USB Endpoint Crossover Voltages
30
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9 Detailed Description
9.1 Overview
The TPS25762-Q1 is a fully-integrated AEC-Q100 USB Power Delivery (USB-PD) source intended for use in
12-V automotive battery systems. Input supply pin, VIN, must be connected to a load dump clamped battery
supply, VBAT, and never exceed 40 V (ABS MAX).
The device consists of seven sub-blocks: USB-PD controller; Type-C cable plug and orientation detection
circuitry; USB Endpoint; USB Battery Charging Specification Version 1.2 (BC1.2) detection circuitry; digital
core; device power management and supervisory circuitry; and a buck-boost converter integrated with 4 power
switches.
The USB-PD controller provides the physical layer (PHY) functionality of the USB-PD protocol. The USB-PD
data is output through either the Px_CC1 pin or the Px_CC2 pin, depending on the orientation of the reversible
USB Type-C cable. For a high-level block diagram of the USB-PD physical layer, a description of its features and
more detailed circuitry, see USB-PD Physical Layer.
The cable plug and orientation detection analog circuitry automatically detects a USB Type-C cable plug
insertion and also automatically detects the cable orientation. For a high-level block diagram of cable plug
and orientation detection, a description of its features and more detailed circuitry, see Cable Plug and Orientation
Detection.
A USB Endpoint is included for downloading configuration information and firmware updates. When enabled by
firmware, the USB Endpoint connects to the Port A DP and DM pins.
The USB BC1.2 sub-block contains circuitry to support legacy USB charging methods which signal on the USB
DP and DM data lines including: DCP, Divider-3, 1.2 V mode, and HVDCP. See BC 1.2, legacy and fast charging
modes (Px_DP, Px_DM).
The power management and supervisory circuitry generates the LDO_5V, LDO_3V3, and LDO_1V5 voltage
rails used by the device. LDO_5V supplies the LDO_3V3 and LDO_1V5 rails. For a high-level block diagram
of the power management circuitry, a description of its features and more detailed operation, see Internal LDO
Regulators section.
The digital core contains an ARM Cortex-M0 with 160-kB ROM and 27-kB RAM memory. The ROM contains
firmware code to execute device functionality. RAM stores application configuration code created using the
Graphical User Interface (GUI) and post-manufacturing firmware updates. The digital core is the engine for
autonomously managing the system including: USB port connection status and communication; system power
budget and allocation; system thermal monitoring and load shedding; and fault detection and reporting. All
devices contain one controller I2C port (I2C1) for controlling external peripherals such as external EEPROM
memory; DC/DC converters; USB data multiplexers/redrivers; GPIO expanders; and additional temperature
sensors. Some devices include an I2C target port (I2C2) for connection to an external processor, HUB or
embedded controller. An integrated 8-bit analog-to-digital converter ADC (see the ADC section), monitors USB
port telemetry information. USB port connection status, voltage, current and fault information can be read from
I2C2 target port. For a high-level block diagram of the digital core and a description of its features, see the Digital
Core section.
The integrated buck-boost converter is the PA_VBUS power source. It operates in buck mode when VIN is
greater than VOUT and boost mode when VIN is less than VOUT. When VIN and VOUT are nearly the same, it
operates in transition mode.
Single Port Device
TPS25762-Q1 is a single USB-PD port device. Refer to Device Comparison Table for dual port options. The
TPS25762-Q1 device consists of a single 3 to 21 V output internal buck-boost converter, one USB-PD port
controller providing cable plug and orientation detection, one internal VCONN source path, legacy USB Battery
Charging Specification v1.2 Dedicated Charging Port (DCP) as well as legacy (non-USB compliant) charger
detection including: Divider-3, 1.2 V, and HVDCP modes. The TPS25762-Q1 device communicates with its
connected USB Type-C cable and downstream USB device at the opposite end of the cable to determine
connection state and enables VBUS sourcing as appropriate.
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9.2 Functional Block Diagram
BOOT1
SW2
SW1
BOOT2
BUCK BOOST
IN
OUT
CSP
LDO_5V
ENABLE, LDOs, BIAS,
VCONN SUPPLY
PA_CABLE
DET &
VCONN
LDO_1V5
MUXes
I/O
BUFFERS,
PD PHY
(Port A)
CSN/VBUS
PA_CC1
PA_CC2
PA_DP | GPIO8
PA_DM | GPIO7
LDO_3V3
SYNC | GPIO6
M0
NFET
CHARGE
PUMPS
TVSP
LDO_3V3
NTC
ADC
CONFIG,
ESD,
STBUS/STBAT
IRQ | GPIO9
I2C_SCL1
I2C_SDA1
Type-C Connector
CURRENT SENSE,
CURRENT LIMIT, CABLE
COMPENSATION
EN/UVLO
NTC | GPIO5
GPIO0
MUXes,
I/O
BUFFERS
I2C PORT 1
CONTROLLER
IRQ2(o) | GPIO1
GPIO2 | I2C_SCL2
GPIO3 | I2C_SDA2
PA_LSGD
AGND
I2C PORT 2
TARGET
PGND
9.3 Feature Description
9.3.1 Device Power Management and Supervisory Circuitry
9.3.1.1 VIN UVLO and Enable/UVLO
The TPS25762-Q1 has one internally fixed VIN UVLO and one user programmable UVLO using the EN/UVLO
pin. Both thresholds must be cleared for the device to start up.
• The fixed VIN(UVLO) has a rising threshold between 5 and 5.5 V to ensure internal circuits have sufficient
headroom for proper operation.
• The EN/UVLO pin provides the user with a resistor programmable UVLO threshold and master enable /
disable for the device.
The EN/UVLO pin has three distinct voltage ranges: shutdown, standby, and operating. When the EN/UVLO
pin is below the standby threshold VEN(STBY), the device is disabled in a low power shutdown. When EN/UVLO
voltage is greater than the standby threshold VEN(STBY) but less than the operating threshold VEN(OPER), the
internal bias rails, LDO_5V, LDO_3V3, and LDO_1V5 regulators are enabled but remaining device functions
are disabled. When EN/UVLO is greater than the operating threshold VEN(OPER) and LDO_5V, LDO_3V3 and
LDO_1V5 regulators are above their respective undervoltage threshold UVLO thresholds, the device is fully
functional. The EN/UVLO pin includes fixed hysteresis between the shutdown mode and the standby mode.
32
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EN/UVLO
VEN(OP)
VLDO_5V(UVLO_R)
LDO_5V
VLDO_3V3(UVLO_R)
LDO_3V3
VLDO_1V5(UVLO_R)
LDO_1V5
3-4 ms
M0
Disabled
Enabled
trim enabled
Figure 9-1. EN/UVLO and LDO Sequencing
Table 9-1. EN/UVLO and LDO_UVLO Operation
EN/UVLO (1)
LDOs
DEVICE OPERATION
VEN/UVLO < VEN(LDO_V5V_F)
—
Shutdown: LDO_5V, LDO_3V3
and LDO_1V5 OFF. M0 (MCU)
is OFF.
VEN(LDO_V5V_R) < VEN/UVLO <
VEN(STBY)
—
Standby: LDO_5V, LDO_3V3
and LDO_1V5 ON. M0 (MCU) is
OFF.
VEN/UVLO > VEN(OPER)
LDO_5V < VLDO_5V(UVLO_R), or
LDO_3V3 < VLDO_3V3(UVLO_R); or
LDO_1V5 < VLDO_1V5(UVLO_R)
LDO_5V, LDO_3V3 and
LDO_1V5 ON, M0 (MCU) is
OFF.
VEN/UVLO > VEN(OPER)
LDO_5V > VLDO_5V(UVLO_R), and
LDO_3V3 > VLDO_3V3(UVLO_R), and
LDO_1V5 > VLDO_1V5(UVLO_R)
Operating: M0 (MCU) is ON.
(1)
Valid when VIN > VIN(UVLO_R).
In some cases an input UVLO level different than that provided by the internal VIN(UVLO) is needed. This can
be accomplished by using the circuit shown in UVLO Threshold Programming. The input voltage at which the
device turns on is designated VON; while the turnoff voltage is VOFF. First a value for RENB is chosen in the range
of 13 kΩ to 22 kΩ. Use Equation 1 and Equation 2 to calculate RENT and VOFF.
V
RENT = V ON
− 1 × RENB
EN OPER
(1)
The hysteresis between the UVLO turn-on threshold and turn-off threshold is set by the upper resistor in the
EN/UVLO resistor divider and is given by:
VEN HYS
VOFF = 1 − V
EN OPER
× VON
(2)
VIN
RENT
EN/UVLO
RENB
AGND
Figure 9-2. UVLO Threshold Programming
Where
• VON = VIN turn-on voltage
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•
VOFF = VIN turn-off voltage
Note: Ensure RENT ≥ 47 kΩ
If the programmable UVLO is not required, the EN/UVLO pin can be connected to the IN pin with a 47 kΩ, or
larger, resistor.
9.3.1.2 Internal LDO Regulators
Three internal LDOs provide regulated supplies for operation of internal circuitry.
• LDO_5V: Supplies buck-boost gate drive circuitry, LDO_3V3, LDO_1V5, and PA and PB VCONN power
paths. External bypass capacitance, CLDO_5V is required for proper operation. It is highly recommended to
include an additional high frequency 0.1 μF capacitor in parallel with CLDO_5V. CLDO_5V and the parallel
high frequency should be placed as close to the LDO_5V pin as possible. This capacitance: 1) provides
energy storage for the buck-boost internal FET gate drivers, and 2) is required to stabilize the internal 5-V
LDO in applications where an external 5-V supply is not connected. The TPS25762-Q1 will not operate
(release reset) until VLDO_5V(UVLO_R) threshold is met. Hard reset occurs when VLDO_5V < VLDO_5V(UVLO_F)
threshold. Current from LDO_5V returns to PGND pin. The LDO_5V output may be used to supply a small
external loads such as indicator LEDs. When supplying external components, it is recommended that the
total external load current not exceed 25 mA (MAX).
– 0.1W VCONN: when enabled in the application configuration GUI, LDO_5V is capable of sourcing 20 mA
each to PA_VCONN and PB_VCONN.
– 1W VCONN: when enabled in the application configuration GUI, this mode of operation requires an
external 4.75 - 5.5 V, 500-mA capable supply connected to LDO_5V. Back-feeding of LDO_5V is allowed.
• LDO_3V3: Supplies internal analog circuits, GPIO buffers, USB PD and the USB Endpoint PHYs. External
bypass capacitance of CLDO_3V3 is required for proper operation. An additional 0.1 μF capacitor in parallel
with CLDO_3V3 is highly recommended to filter high frequency noise from the I/O buffers and PHYs. The
LDO_3V3 can supply external circuits at up to 25 mA. Expected loads include: EEPROM (5mA), NTC resistor
divider network (< 1 mA). Current may be drawn up to ILDO_3V3(ILIMIT). Note: the USB PD and Endpoint PHYs
draw current from LDO_3V3. If a CCx or Dx pin is shorted to GND during a transmission the current drawn
may reach the current limit threshold. Similarly, if any GPIO pins are configured as push-pull outputs and a
GPIO short to GND event occurs, the LDO_3V3 current limit may be reached. Current returns to AGND pin.
• LDO_1V5: Supplies digital core. External bypass capacitance of CLDO_1V5 is required for proper operation.
An additional 0.1 μF capacitor in parallel with CLDO_1V5 is highly recommended to filter noise generated by
the digital core. The M0 is held in reset until all three UVLO_R (rising) thresholds are met. Current returns to
AGND pin.
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VIN
LDO_5V
(125mA)
LDO_5V
PGND
LDO_3V3
(25 mA)
LDO_3V3
GND
LDO_1V5
(10 mA)
LDO_1V5
GND
Note: LDO_5V max regulation current includes LDO_3V3
(25 mA) and LDO_1V5 (10 mA)
Figure 9-3. Internal LDO Connection Diagram
9.3.2 TVSP Device Configuration and ESD Protection
The Transient Voltage protection and firmware Setting Pin (TVSP) has three functions: 1) Boot configuration
settings; 2) USB connector pin short to VBUS or VBAT protection; and 3) USB connector pin enhanced ESD
protection.
• RTVSP: At power on, the resistance between the TVSP pin and PGND determines the boot method, USB PD
port I2C addresses and I2C logic thresholds. Refer to Table 9-3. The most common configuration is shown in
Figure 9-4 with RTVSP open, corresponding to TVSP Index 0. During device initialization and boot, typically
within 4 seconds after power on, VIN must be above 7.6 V to ensure proper bias of the TVSP pin to 5.5 V.
Once boot is complete the device can operate over the full VIN range.
• CTVSP: A 0.1-µF capacitor (CTVSP) must be connected to PGND. Place CTVSP as close to the TVSP pin
as possible to minimize parasitic inductance. CTVSP is part of the centralized protection circuitry fortifying
connector pins Px_CCy, Px_DP and Px_DM from damage during short to VBUS, VBAT and ESD events. A
40-V 0.1-µF capacitor is recommended for proper operation of the internal TVSP regulator circuit.
• TVSP Damper Network: Capacitance, CDAMP, and resistance, RDAMP, form an RC network preventing
excessive current from flowing inside the device durging connector pin over-voltage and ESD events.
– CDAMP: A 0.47-µF capacitor must be connected in series with RDAMP to PGND. A 40-V 0.47-µF capacitor
is recommended.
– RDAMP: A 10-Ω resistor must be connected in series with CDAMP to PGND. A 0.25-W rating is
recommended.
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LDO5V
Px_DP
ESD
BC1.2
Functions
Bias
~5.5V
PGND
ESD
Px_DM
RDAMP
CTVSP
Px_CC1
ESD
I mirror
to ADC
1 k:
TVSP_PD_EN
CDAMP
0.47 PF
0.1 PF
RTVSP
10 :
TVSP
USB PD
Functions
ESD
Px_CC2
Recommended
component values
PGND
Figure 9-4. Basic TVSP Pin Connection
Table 9-2. Recommended TVSP Components
CTVSP
RDAMP
CDAMP
0.1 μF
10 Ω
0.47 μF
Table 9-3. RTVSP Configuration Settings
TVSP Index
ADC Value
I2C Target Port
(2)
Addresses (A | B)
I2C Logic (VDD)
Open
0
≤ 10 (0x0A)
0x22 | 0x26
3.3 V
EEPROM
93.1
1
≤ 24 (0x18)
0x23 | 0x27
3.3 V
External HUB/MCU
47.5
2
≤ 42 (0x2A)
0x22 | 0x26
1.8 V
EEPROM
29.4
3
≤ 63 (0x3F)
0x23 | 0x27
1.8 V
External HUB/MCU
20.0
4
≤ 89 (0x59)
0x23 | 0x27
3.3 V
EEPROM
14.7
5
≤ 119 (0x77)
0x22 | 0x26
3.3 V
External HUB/MCU
RTVSP (kΩ)
(1)
(2)
(1)
Boot Mode
11.0
6
≤ 156 (0x9C)
0x23 | 0x27
1.8 V
EEPROM
8.45
7
≤ 201 (0xC9)
0x22 | 0x26
1.8 V
External HUB/MCU
6.65
8
≤ 255 (0xFF)
0x22 | 0x26
3.3 V
Firmware Update
1% resistor required.
0x22h = 0100010; 0x26h = 0100110; 0x23h = 0100011; 0x27 = 0100111
Device firmware can be updated using the USB Endpoint on the PA_DP and PA_DM pins. To enable firmware
update mode, boot the device with a resistance corresponding to Index 8 between TVPS and PGND. A boot
cycle can be performed by power cycling the device or by pulling the EN/UVLO pin momentarily below VEN(OPER)
threshold. An example circuit to enable USB Endpoint firmware update mode is shown in Figure 9-5
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LDO5V
Px_DP
ESD
PGND
USB Endpoint
Firmware Update Mode
TVSP
ESD
Px_DM
Px_CC1
CTVSP
RDAMP
CDAMP
RTVSP = {index 8}
BC1.2
Funcons
Bias
~5.5V
ESD
I mirror
to ADC
TVSP_PD_EN
1 k
USB PD
Func ons
ESD
Px_CC2
PGND
Figure 9-5. Example Circuit to Enable USB Endpoint Firmware Update Mode
9.3.3 Buck-Boost Regulator
9.3.3.1 Buck-Boost Regulator Operation
The TPS25762-Q1 devices utilize a fixed frequency, current mode control buck-boost converter. This converter
operates in forced continuous conduction mode (CCM) and therefore allows inductor current to flow in either
direction at light loads. The power train consists of five N-Channel power MOSFETs. See Figure 9-6. Transistors
M1 and M2 are the high-side and low-side buck FETs. Transistors M3 and M4 are the high-side and low-side
boost FETs. Transistor M5 blocks reverse conduction from OUT to SW2 during input overvoltage transients as
explained in VIN Supply and VIN Over-Voltage Protection.
• IN: Receives power from the battery. The input bulk capacitor must be connected between IN and PGND.
• OUT: Delivers power from the switching converter. The output bulk capacitor connects between OUT to
PGND.
• PGND: Ground return for the switching converter power train.
• AGND: Ground return for everything except the power train. The voltage feedback divider returns to AGND.
PGND and AGND must connect together on the circuit board.
• LDO_5V: Provides gate drive for M2 and M4 and current for the bootstrap circuits feeding BOOT1 and
BOOT2. A bypass capacitor must connect from LDO_5V to PGND. See Internal LDO Regulators for more
information on LDO_5V.
• LDO_3V3: Analog circuitry power supply. A bypass capacitor must connect from LDO_3V3 to AGND. See
Internal LDO Regulators for more information on LDO_3V3.
• BOOT1: Provides gate drive for M1. A bootstrap capacitor must connect from BOOT1 to SW1.
• BOOT2: Provides gate drive for M3. A bootstrap capacitor must connect from BOOT2 to SW2.
• SW1: Connects M1 and M2 to external inductor.
• SW2: Connects M3 and M4 to external inductor.
• CSP: Positive terminal of average current sense amplifier. Connects to positive terminal of output bulk
capacitor.
• CSN/BUS: Negative terminal of average current sense amplifier. A 10-mΩ current sense resistor is externally
connected from CSP to CSN/BUS.
Depending upon the input voltage VIN and the output voltage VOUT, the converter can operate in one of four
different states, each of which is described in following sections.
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M1
M3
M5
IN
OUT
M2
M4
PGND
Figure 9-6. Buck-Boost Internal Power FETs
Buck State
When the input voltage VIN significantly exceeds the output voltage VOUT, the converter enters the buck region of
operation in which it performs an endless series of buck switching cycles Buck State. M3 and M5 are constantly
on and M4 is constantly off. When the clock signals that a switching cycle has begun, the controller turns on M2
and turns off M1. This switch configuration corresponds to the off-time interval of a traditional buck converter.
The voltage difference VSW1 – VSW2 across the inductor equals –VOUT. The inductor current IL ramps down until
it reaches a threshold IVALLEY set by the error amplifiers. The controller then turns off M2 and turns on M1. This
switch configuration corresponds to the on-time interval of a traditional buck converter. The voltage difference
VSW1 – VSW2 now equals VIN – VOUT. The inductor current now ramps up until the converter clock signals that
the end of the switching cycle has been reached.
The on-time ton equals the time interval during which M1 conducts. The off-time toff equals the time interval
during which M2 conducts. Because the converter operates in FCCM, the period τ equals the sum of ton and toff.
During the buck state, the controller regulates power flow by adjusting the buck duty cycle D, which equals the
ratio ton/τ.
38
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VSW1 t VSW2
VIN t VOUT
t
t VOUT
IL
IVALLEY
t
toff
ton
•
Figure 9-7. Buck State
Buck Transition State
When the input voltage VIN is only slightly larger than the output voltage VOUT, the converter enters the buck
transition region of operation in which it alternately performs buck and boost switching cycles Buck Transition.
M5 is always on. When the clock signals that a buck switching cycle has begun, the controller turns on M2
and M3, and it turns off M1 and M4. This switch configuration corresponds to the off-time of a traditional buck
converter. The inductor current IL ramps down until it reaches a threshold IVALLEY set by the error amplifiers. The
controller then turns off M2 and turns on M1. This switch configuration corresponds to the on-time of a traditional
buck converter. The inductor current now ramps up slowly until the clock signals the end of the buck switching
cycle. The next switching cycle is a boost switching cycle. When this cycle begins, the controller turns M3 off
and turns M4 on. M2 remains off, and both M1 and M5 remain on. This switch configuration corresponds to
the on-time of a traditional boost converter. The inductor current IL now ramps up rapidly until the fixed on-time
expires. The controller then turns off M4 and turns on M3. The inductor current now ramps down until the clock
signals the end of the boost switching cycle. The next switching cycle will be another buck cycle.
During the buck transition state, the controller regulates power flow by adjusting the buck duty cycle. The boost
duty cycle remains fixed. If the converter had remained in the buck state rather than move to the buck transition
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state, the buck on-time would have become so short that it would have become impossible to regulate power
flow without pulse skipping.
VSW1 t VSW2
VIN
VIN t VOUT
t
t VOUT
IL
IVALLEY
t
toff
ton
•
Buck
tB
•
Boost
Figure 9-8. Buck Transition
Boost Transition State
When the input voltage VIN is only slightly smaller than the output voltage VOUT, the converter enters the boost
transition region of operation in which it alternately performs boost and buck switching cycles Boost Transition.
M5 is always on. When the clock signals that a boost switching cycle has begun, the controller turns on M1
and M4, and it turns off M2 and M3. This switch configuration corresponds to the on-time of a traditional boost
converter. The inductor current IL ramps up until it reaches a threshold IPEAK set by the error amplifiers. The
controller then turns off M4 and turns on M3. This switch configuration corresponds to the off-time of a traditional
boost converter. The inductor current now ramps down slowly until the clock signals the end of the boost
switching cycle. The next switching cycle is a buck switching cycle. When this cycle begins, the controller turns
M1 off and turns M2 on. M4 remains off, and both M3 and M5 remain on. This switch configuration corresponds
to the off-time of a traditional buck converter. The inductor current IL now ramps down rapidly until the fixed
off-time expires. The controller then turns off M2 and turns on M1. The inductor current now ramps up until the
clock signals the end of the buck switching cycle. The next switching cycle will be another boost cycle.
40
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During the boost transition state, the controller regulates power flow by adjusting the boost duty cycle. The buck
duty cycle remains fixed. If the converter had remained in the boost state rather than move to the boost transition
state, the boost on-time would have become so short that it would have become impossible to regulate power
flow without pulse skipping.
VSW1 t VSW2
VIN
t
VIN t VOUT
t VOUT
IL
IPEAK
t
ton
toff
•
Boost
tE
•
Buck
Figure 9-9. Boost Transition
Boost State
When the input voltage VIN is significantly less than the output voltage VOUT, the converter enters the boost
region of operation in which it performs an endless series of boost switching cycles Boost State. M1 and M5 are
constantly on and M2 is constantly off. When the clock signals that a switching cycle has begun, the controller
turns on M4 and turns off M3. This switch configuration corresponds to the on-time interval of a traditional boost
converter. The voltage difference VSW1 – VSW2 across the inductor equals VIN. The inductor current IL ramps
up until it reaches a threshold IPEAK set by the error amplifiers. The controller then turns off M4 and turns on
M3. This switch configuration corresponds to the off-time interval of a traditional boost converter. The voltage
difference VSW1 – VSW2 now equals VIN – VOUT, which is negative. The inductor current now ramps down until
the converter clock signals that the end of the switching cycle has been reached.
The on-time ton equals the time interval during which M4 conducts. The off-time toff equals the time interval
during which M3 conducts. Because the converter operates in FCCM, the period τ equals the sum of ton and toff.
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During the boost state, the controller regulates power flow by adjusting the boost duty cycle D, which equals the
ratio ton/τ.
VSW1 t VSW2
VIN
t
VIN t VOUT
IL
IPEAK
t
ton
toff
•
Figure 9-10. Boost State
Boundaries of the Regions of Operation
Regions of Operation graphically depicts the four regions of operation and the boundaries between them. When
VBUS > kVIN, the converter remains in the boost region of operation. The value k is 1.2. When VIN < VBUS < kVIN,
the converter enters the boost transition region of operation. When VIN/k < VBUS < VIN, the converter enters the
buck transition region of operation. When VBUS < VIN/k, the converter enters the buck region of operation. The
converter will cease operating if VIN exceeds the OVP threshold, which lies between 18 and 20 V. Similarly, the
converter will also cease operating if VIN drops below either the internal UVLO threshold, which lies between
5 and 5.5 V, or the user programmed EN/UVLO threshold (see VIN UVLO and ENABLE/UVLO, whichever is
greater).
42
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VBUS=kVIN
VBUS
VIN=VBUS
ion
21V
Bo
o
st
tra
n
si t
Boost
n
ra
i
si t
on
VIN=kVBUS
kt
uc
B
Buck
VIN
UVLO
OVP
Figure 9-11. Regions of Operation
9.3.3.2 Switching Frequency, Frequency Dither, Phase-Shift and Synchronization
The PWM oscillator frequency (fsw) is programmed by firmware using the application configuration GUI. The
switching converter is intended for operation below the AM radio band (520 kHz - 1730 kHz). Three nominal fsw
settings below are available: 300 kHz, 400 kHz and 450 kHz.
Frequency dithering can be enabled by firmware via the application GUI. When enabled, the nominal oscillator
frequency is dithered by ±FSSS (approximately ±10%) using triangular waveform modulation (see Dithering using
triangular waveform modulation). The dither period τM is the reciprocal of the dither modulation frequency
FSSS_MOD. Two firmware selectable dither modulation frequencies FSSS_M are available: 10 and 25 kHz.
Dithering spreads the spectral peaks generated by switching, thereby reducing the peak harmonic levels and
easing EMI filter design.
f
1.1fs
fs
0.9fs
t
WM
Figure 9-12. Dithering Using Triangular Waveform Modulation
Multiple converters can be synchronized using the SYNC pin. This pin can be firmware-configured as either an
output SYNC(o) or an input SYNC(i).
• SYNC(o): The switching clock is placed on the SYNC(o) pin. This waveform will have a duty cycle of
approximately 50%. If frequency dithering is configured by firmware, this signal will also exhibit dithering.
Four phase settings are available by firmware configuration to shift the SYNC(o) output relative to the internal
switching clock by 0°, 90°, 120°, or 180°. SYNC(o) is used to slave other DC/DC converter clocks to the
switching converter clock inside the TPS25762-Q1. When two dc/dc converters operate out of phase, peak
input current from the battery is reduced and total input bulk capacitance requirements decrease.
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Internal PWM
Clock
Falling SWx edge triggers on rising edge of
internal PWM clock
Internal SWx
node(s)
period
~50%
duty
SYNC(o)
0º phase shift
90º
SYNC(o)
90º phase shift
120º
SYNC(o)
120º phase shift
180º
SYNC(o)
180º phase shift
Figure 9-13. SYNC(o) Phase Shift
SYNC(o)
Other DC/DC
Converter
TPS257xx-Q1
•
Figure 9-14. Using SYNC(o) to slave DC/DC Converter
SYNC(i): The internal clock is synchronized to the pulse train on the SYNC(i) pin. This feature is used
to slave the TPS25762-Q1 to an external clock. The period of this clock must meet synchronization
requirements in SYNC(i) frequency ranges or the TPS25762-Q1 will instead use its internal switching clock.
If an external clock deviates outside of the acceptable frequency range and then returns to within the
acceptable frequency range, the TPS25762-Q1 will resume operation from the external clock after counting
8 consecutive clocks meeting the criteria of Table 9-4. When SYNC(i) is configured, frequency dithering is
disabled when operating from the internal clock following a failure of the external clock.
Table 9-4. SYNC(i) Frequency Ranges
fSW Firmware Setting
Allowed SYNC(i) Frequency Range
MIN
44
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Table 9-4. SYNC(i) Frequency Ranges (continued)
fSW Firmware Setting
Allowed SYNC(i) Frequency Range
300 kHz
250 kHz
353 kHz
400 kHz
334 kHz
470 kHz
450 kHz
376 kHz
530 kHz
9.3.3.3 VIN Supply and VIN Over-Voltage Protection
VIN Supply
The voltage VIN at the input supply pin IN, measured with respect to AGND, must meet the following
requirements:
• Overvoltage: The voltage VIN must never exceed an absolute maximum of 40 V, and should not exceed 36
V under anticipated operating conditions. Automotive applications will typically require an external transient
suppressor to meet this requirement.
• Load dump: When the converter is running and VIN exceeds 18 V, the positive slew rate dVIN/dt must not
exceed 200 V/ms.
• Double battery: When the converter is not running, the positive slew rate dVIN/dt must not exceed 10 V/µs.
The input EMI filter can help mitigate input voltage slew rates.
• Reverse battery: The voltage VIN must never go below –0.3 V. Automotive applications will typically require
external reverse voltage blocking circuitry.
The buck-boost switching converter is capable of delivering its full rated output power of 65 W over an input
supply range 6.8 V < VIN < 18 V . The input voltage can dip down to the UVLO threshold providing that the
output power level is appropriately derated.
VIN Overvoltage Protection Circuitry
The TPS25762-Q1 contains circuitry that protects the power train against load dump and double battery
conditions. When VIN exceeds about 19 V, a comparator determines that an input overvoltage condition has
occurred. This comparator sends a signal that shuts the switching converter down. Transistors M1, M2, and M3
in Buck-Boost Internal Power FETs are turned off, and transistor M4 is turned on. However, current is still flowing
through the inductor. Two cases may exist: the current may flow forward (from SW1 to SW2) or in reverse (from
SW2 to SW1). Reverse current flow will forward-bias the body diode of M1. The voltage across the inductor
will then equal the sum of the forward voltage of this diode plus the input voltage, which is sufficient to cause
the inductor voltage to rapidly ramp down to zero. Forward current flow will forward-bias the body diode of M2.
After the inductor current is released, a small linear regulator biases SW1 to about 15 V. When the overvoltage
condition is removed, the switching regulator may resume operation.
9.3.3.4 Feedback Paths and Error Amplifiers
The TPS25762-Q1 includes not only a programmable voltage feedback path, but also a programmable average
current feedback path that can be used to limit the average current provided by the switching converter to the
USB cable. The voltage feedback path also includes provision for cable droop compensation. Figure 9-15 shows
a simplified block diagram of the relevant portions of the integrated circuit.
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CSN/BUS
A1
A2
RF1
CSP
CSN/BUS
Avg
Current
Amplier
RF2
Voltage EA
I1
I1
A3
Vcomp
I2
A4
8
icode
MAX
COMP
1V
IDAC
RC1
Current EA
CC2
12
vcode
CC1
VDAC
RF3
Figure 9-15. Simplified block diagram of feedback paths and error amplifiers.
9.3.3.5 Transconductors and Compensation
The TPS25762-Q1 is internally compensated. The overall slope compensation and loop compensation is
internally fixed based on inductor and capacitance values shown in Table 10-1.
9.3.3.6 Output Voltage DAC, Soft-Start and Cable Droop Compensation
The buck-boost output voltage is regulated at the CSN/VBUS pin. A 12-bit digital-to-analog converter, VDAC,
provides ±20-mV step voltage adjustments of VCSP/BUS as commanded by device firmware.
After a successful cable detect event, firmware sets the VDAC to output 5 V as measured on the VCSN/BUS
output. An internal clock steps up the VDAC codes from an initial 0 V to final 5-V setting producing a monotonic
ramp of VCSN/BUS to 5 V at tSS.
In some applications, the USB-PD controller may be located 1 m, or more, from the USB receptacle. When
configured and enabled by firmware, cable droop compensation will increase the VCSP/BUS linearly with
increasing load current independent of the VDAC setting. Four selectable VOUT_CDC ranges are available. 500
mV is the maximum supported cable droop voltage and it is disabled by default during USB-PD PPS contracts.
9.3.3.7 VBUS Overvoltage Protection
A fixed threshold overvoltage comparator monitors the CSN/BUS pin for overvoltage conditions. When the
VCSN/BUS_OVP_R threshold is exceeded, output OV protection circuitry turns off the internal MOSFETs. Switching
resumes when VCSN/BUS decreases below VCSN/BUS_OVP_F.
46
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+
Buck-Boost
State Machine
–
CSN/BUS
VCSN/BUS_OVP
ADC
M0
Figure 9-16. VBUS OVP and UVP
9.3.3.8 VBUS Undervoltage Protection
PA_VBUS undervoltage conditions are monitored by the internal ADC. In accordance with USB Power Delivery
specifications, the TPS25762-Q1 firmware configures the threshold based on USB PD contract with the attached
sink device.
9.3.3.9 Current Sense Resistor (RSNS) and Current Limit Operation
The CSP and CSN/BUS pins are the positive and negative inputs to the average current sense amplifier (CSA).
The TPS25762-Q1 devices sense port A load current across sense resistor, RSNS, located between the CSP and
CSN/BUS pins. A 10-mΩ, 1%, power resistor provides a 0 - 50-mV sense voltage over the range 0 ≤ IOUT ≤ 5 A.
A seven bit digital-to-analog converter, IDAC, provides ±50-mA step current limit adjustments and is
automatically programmed by device firmware.
9.3.3.10 Buck-Boost Peak Current Limits
The buck and boost peak current limits are adjustable by firmware using the application configuration GUI.
Refer to the BUCK-BOOST PEAK CURRENT LIMITS in Section 7.6 of the Electrical Characteristics tables for
selectable values.
In most applications it is desirable to limit input current to the automotive USB module to protect module
components, connectors and wiring from over-current conditions. The worst case input current condition occurs
when VIN is minimum and VCSN/BUS is maximum (21 V) while supplying maximum 3.25 A output current. When
VIN < VBUS, the internal DC/DC converter is operating in boost mode. Refer to the Table 10-6 tables in the
Inductor Currents section to estimate the peak current versus recommended inductor value for the application.
The buck peak current limit setting selection should be just lower than the boost peak current limit. Set as close
to the boost peak current limit as selections allow to prevent the possibility of limit cycling between the two peak
current limits under extreme transients. IPEAK(BUCK) ≅ IPEAK(BOOST).
When selecting an inductor, it is important select one with an appropriate saturation current rating, IL(SAT). The
inductor IL(SAT) rating should larger than the maximum (MAX) IPEAK(BOOST) limit from the Electrical Characteristics
tables to avoid excessive current flow in the TPS25762-Q1 or the inductor.
9.3.4 USB-PD Physical Layer
Figure 9-17 shows the USB PD physical layer block surrounded by a simplified version of the analog plug and
orientation detection block. This block applies to Port A.
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LDO_3V3
IRp
RSNK
Px_CC1
Digital
Core
USB-PD PHY
(Rx/Tx)
Px_CC2
LDO_3V3
IRp
RSNK
Figure 9-17. USB-PD Physical Layer and Simplified Plug and Orientation Detection Circuitry
USB-PD messages are transmitted in a USB Type-C system using a BMC (Biphase Mark Coding) signaling. The
BMC signal is output on the same pin (Px_CC1 or Px_CC2) that is DC biased due to the Rp (or Rd) cable attach
mechanism discussed in the USB-PD BMC Transmitter section.
9.3.4.1 USB-PD Encoding and Signaling
Figure 9-18 illustrates the high-level block diagram of the baseband USB-PD transmitter. Figure 9-19 illustrates
the high-level block diagram of the baseband USB-PD receiver.
4b5b
Encoder
Data
BMC
Encoder
to PD_TX
CRC
Figure 9-18. USB-PD Baseband Transmitter Block Diagram
from PD_RX
BMC
Decoder
SOP
Detect
Data
4b5b
Decoder
CRC
Figure 9-19. USB-PD Baseband Receiver Block Diagram
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9.3.4.2 USB-PD Bi-Phase Marked Coding
The USB-PD physical layer implemented in the TPS25762-Q1 is compliant to the USB-PD Specifications. The
encoding scheme used for the baseband PD signal is a version of Manchester coding called Biphase Mark
Coding (BMC). In this code, there is a transition at the start of every bit time and there is a second transition in
the middle of the bit cell when a 1 is transmitted. This coding scheme is nearly DC balanced with limited disparity
(limited to 1/2 bit over an arbitrary packet, so a very low DC level). Figure 9-20 illustrates Biphase Mark Coding.
0
1
0
1
0
1
0
1
0
0
0
1
1
0
0
0
1
1
Data in
BMC
Figure 9-20. Biphase Mark Coding Example
The USB PD baseband signal is driven onto the Px_CC1 or Px_CC2 pin with a tri-state driver. The tri-state driver
controls slew rate to limit coupling to D+/D– and to other signal lines in the Type-C fully featured cables. When
sending the USB-PD preamble, the transmitter starts by transmitting a low level. The receiver at the other end
tolerates the loss of the first edge. The transmitter terminates the final bit by an edge to ensure the receiver
clocks the final bit of EOP.
9.3.4.3 USB-PD Transmit (TX) and Receive (Rx) Masks
The USB-PD driver meets the defined USB-PD BMC TX masks. Since a BMC coded “1” contains a signal edge
at the beginning and middle of the UI, and the BMC coded “0” contains only an edge at the beginning, the
masks are different for each. The USB-PD receiver meets the defined USB-PD BMC Rx masks. The boundaries
of the Rx outer mask are specified to accommodate a change in signal amplitude due to the ground offset
through the cable. The Rx masks are therefore larger than the boundaries of the TX outer mask. Similarly, the
boundaries of the Rx inner mask are smaller than the boundaries of the TX inner mask. Triangular time masks
are superimposed on the TX outer masks and defined at the signal transitions to require a minimum edge rate
that has minimal impact on adjacent higher speed lanes. The TX inner mask enforces the maximum limits on the
rise and fall times. Refer to the USB-PD Specifications for more details.
9.3.4.4 USB-PD BMC Transmitter
The TPS25762-Q1 transmits and receives USB-PD data over one of the Px_CCy pins for a given CC pin pair
(one pair per USB Type-C port). The Px_CCy pins are also used to determine the cable orientation (see the
Cable Plug and Orientation Detection section) and maintain cable/device attach detection. Thus, a DC bias
exists on the Px_CCy pins. The transmitter driver overdrives the Px_CCy DC bias while transmitting, but returns
to a Hi-Z state allowing the DC voltage to return to the Px_CCy pin when not transmitting. While either Px_CC1
or Px_CC2 may be used for transmitting and receiving, during a given connection only the one that mates with
the CC pin of the plug is used; so there is no dynamic switching between Px_CC1 and Px_CC2. Figure 9-21
shows the USB-PD BMC TX and RX driver block diagram.
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LDO_3V3
PD_TX
Level Shifter
Driver
Px_CC1
+
PD_RX
Level Shifter
Px_CC2
±
Digitally
Adjustable
VREF (VRXHI, VRXLO)
USB-PD Modem
Figure 9-21. USB-PD BMC TX/Rx Block Diagram
Figure 9-22 shows the transmission of the BMC data on top of the DC bias. Note, The DC bias can be anywhere
between the minimum threshold for detecting a UFP attach and the maximum threshold for detecting a Sink
attach to a Source. This means that the DC bias can be above or below the VOH of the transmitter driver.
VOH
DC Bias
DC Bias
VOL
DC Bias
VOH
DC Bias
VOL
Figure 9-22. TX Driver Transmission with DC Bias
The transmitter drives a digital signal onto the Px_CCy lines. The signal peak, VTXHI, is set to meet the TX
masks defined in the USB-PD Specifications. Note that the TX mask is measured at the far-end of the cable.
When driving the line, the transmitter driver has an output impedance of ZDRIVER. ZDRIVER is determined by the
driver resistance and the shunt capacitance of the source and is frequency dependent. ZDRIVER impacts the
noise ingression in the cable.
RDRIVER
ZDRIVER
Driver
CDRIVER
Figure 9-23. ZDRIVER Circuit
9.3.4.5 USB-PD BMC Receiver
The receiver block of the TPS25762-Q1 receives a signal that falls within the allowed Rx masks defined in the
USB PD specification. The receive thresholds and hysteresis come from this mask.
50
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Figure 9-24 shows an example of a multi-drop USB-PD connection (only the CC wire). This connection has
the typical Sink (device) to Source (host) connection, but also includes cable USB-PD Tx/Rx blocks. Only one
system can be transmitting at a time. All other systems are Hi-Z (ZBMCRX). The USB-PD Specification also
specifies the capacitance that can exist on the wire as well as a typical DC bias setting circuit for attach
detection.
Source
System
Sink
System
Pullup for
Attach
Connector
Detection
Connector
Cable
CC wire
Tx
Tx
CRECEIVER
CRECEIVER
Rx
Rx
CCablePlug_CC
CCablePlug_CC
RD for
Attach
Detection
Rx
Tx
623¶ 3'
communication only
(eMarker #1)
Rx
Tx
623¶¶ 3'
communication only
(eMarker #2)
Figure 9-24. Example USB-PD Multi-Drop Configuration
9.3.4.6 Squelch Receiver
The TPS25762-Q1 has a squelch receiver to monitor for the bus idle condition as defined by the USB PD
specification. The squelch receiver output reflects the state of the CC pin regardless of the source of the
transmission.
9.3.5 VCONN
Internal VCONN sourcing power paths are firmware configurable. Using only the internal LDO_5V supply, PortA
is able to draw 20 mA continuously. If an external 5-V regulator is connected to the LDO_5V pin and the
application GUI settings are enabled, PortA is able to draw 200 mA continuously. When disabled, blocking FETs
in the PortA VCONN paths protect the LDO_5V rail from high-voltage and reverse current.
When VCONN power is enabled and provided, the internal VCONN power switches have a current limit of
ILIMVC. If the VCONN load current exceeds ILIMVC, the current clamping circuit activates within tiOS_PP_CABLE and
the switch behaves as a constant current source. Reverse current blocking is disabled when current is flowing to
Px_CC1 or Px_CC2.
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Px_CC1 Gate Control
TSD_Px_VCONN
Fast current limit, ILIMVC
LDO_5V
Px_CC1
Px_CC2 Gate Control
Temp
Sensor
Px_CC2
Figure 9-25. VCONN Power Switches
When operating in current limit, the VCONN FET temperature rises. Local temperature sensors disable the
Px_VCONN path in current limit when Tsensor > TSD_Px_VCONN within tPP_CABLE_off. The application firmware
enters USB Type-C Error Recovery on the affected port.
LDO_5V must remain above its under voltage lock out threshold (VLDO_5V(UVLO_F)) for Px_VCONN operation. If
the VLDO_5V(UVLO_F) threshold is reached, Px_VCONN paths are automatically disabled within tPP_CABLE_off.
9.3.6 Cable Plug and Orientation Detection
Figure 9-26 shows the plug and orientation detection block at each Px_CCy pin (PA_CC1, PA_CC2, PB_CC1,
PB_CC2). Each CC pin has identical detection circuitry.
When the port is operating as a Type-C source, the VREFx nodes are multiplexed to the VSRC thresholds
corresponding to the advertised Type-C source capability current, IRp_.
When the port is operating as a Type-C sink, the VREFx nodes are multiplexed to the VSNK thresholds
corresponding to sink detection.
52
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LDO_5V
LDO_3V3
IRpSTD
IRp1.5
IRpSTD_5
IRp1.5
IRp3.0
VREF1
Px_CCy
VREF2
RSNK
VREF3
Figure 9-26. Plug and Orientation Detection Block
9.3.6.1 Configured as a Source
When either of the PA or PB ports is configured as a Source, the device detects when a cable or a Sink is
attached using the Px_CC1 and Px_CC2 pins. When in a disconnected state, the device monitors the voltages
on these pins to determine what, if anything, is connected. See USB Type-C Specification for more information.
Table 9-5 shows the Cable Detect States for a Source.
Table 9-5. Cable Detect States for a Source
Px_CC1
Px_CC2
CONNECTION STATE
RESULTING ACTION
Open
Open
Nothing attached
Continue monitoring both Px_CCy pins for attach. Power is not applied to Px_VBUS
or VCONN.
Rd
Open
Sink attached
Monitor Px_CC1 for detach. Power is applied to Px_VBUS but not to VCONN
(Px_CC2).
Open
Rd
Sink attached
Monitor Px_CC2 for detach. Power is applied to Px_VBUS but not to VCONN
(Px_CC1).
Ra
Open
Powered Cable-No UFP
attached
Monitor Px_CC2 for a Sink attach and Px_CC1 for cable detach. Power is not
applied to Px_VBUS or VCONN (Px_CC1).
Open
Ra
Powered Cable-No UFP
attached
Monitor Px_CC1 for a Sink attach and Px_CC2 for cable detach. Power is not
applied to Px_VBUS or VCONN (Px_CC2).
Ra
Rd
Powered Cable-UFP Attached
Provide power on Px_VBUS and VCONN (Px_CC1) then monitor Px_CC2 for a Sink
detach. Px_CC1 is not monitored for a detach.
Rd
Ra
Powered Cable-UFP attached
Provide power on Px_VBUS and VCONN (Px_CC2) then monitor Px_CC1 for a Sink
detach. Px_CC2 is not monitored for a detach.
When a port is configured as a Source, a current IRp1.5A, is driven out of each Px_CCy pin and each pin is
monitored for different states. When a Sink is attached to the pin a pull-down resistance of Rd to GND exists.
The current IRp1.5A is then forced across the resistance Rd generating a voltage at the Px_CCy pin. The device
applies the configured IRp1.5A until the buck-boost regulator is enabled and operating at 5 V, at which time
application firmware may remain at IRp1.5A or change to IRp3.0A.
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When the Px_CCy pin is connected to an electronically marked cable VCONN input, the pull-down resistance is
different (Ra). In this case the voltage on the Px_CCy pin will pull below VRDstd and the system recognizes the
electronically marked cable.
The VDstd1.5 or VD3.0 threshold is monitored to detect a disconnection depending upon which Rp current source
is active. When a connection has been recognized and the voltage on Px_CCy subsequently rises above the
disconnect threshold for tCC, the system registers a disconnection.
Source monitors for
connection
Sink monitors for
orientation
USB Type-C Cable
+
IRp
Rd
CC
IRp
Ra
Ra
GND
Rd
GND
GND
TPS257xx-Q1
(Type-C source)
Type-C Sink
Figure 9-27. Type-C Cable
9.3.6.2 Configured as a Sink
When the TPS25762-Q1 port is configured as a Sink, such as in Firmware Update Mode with TVSP Index 8,
the device presents a pull-down resistance RSNK on each PA_CCy pin and waits for a Source to attach and
pull-up the voltage on the pin. The Source pulls-up the PA_CCy pin by applying either a resistance or a current.
The Sink detects an attachment by the presence of VBUS. The Sink determines the advertised current from the
Source by the pull-up applied to the PA_CCy pin.
9.3.6.3 Overvoltage Protection (Px_CC1, Px_CC2)
Comparators on the Px_CCy pins detect when the voltage on CC1 or CC2 is too high, or there is reverse current
into the LDO_5V output. During an overvoltage event, VCONN is disabled within tPP_CABLE_FSD and the
associated USB PD transmitter is disabled.
max(VCC1, VCC2) ± VLDO_5V
VVC_RCP
LDO_5V
Control Logic
Disable PP_CABLE
And
USB PD PHY
VVC_OVP
Px_CC1
VPHY_OVP
Px_CC2
VPHY_OVP
Figure 9-28. Over-voltage and Reverse Current Protection
9.3.7 ADC
The ADC is shown in Figure 9-29. The ADC is an 8-bit successive approximation ADC. The input to the ADC is
an analog input mux that supports multiple inputs from various voltages and currents in the device. The output
from the ADC is available to be read and used by application firmware.
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IN
Voltage
Divider 4
PA_VBUS
Voltage
Divider 2
PB_VBUS | GPIO4
Voltage
Divider 2
LDO_5V
Voltage
Divider 3
LDO_3V3
Voltage
Divider 1
8 bits
Input
Mux
ADC
PA_DM | GPIO7
PA_DP | GPIO8
Buffers &
Voltage
Divider 1
PB_DP | GPIO2
PB_DM | GPIO3
NTC | GPIO5
I_PA_VBUS
I-to-V
I_TVSP
I-to-V
Figure 9-29. SAR ADC
ADC
output
8h
7h
6h
5h
4h
3h
2h
LSB
1h
0h
VIN
Figure 9-30. ADC Conversion
9.3.7.1 ADC Divider Ratios
The ADC voltage inputs are each divided down to the full-scale input of 1.2 V. The ADC current sensing
elements are not divided.
Table 9-6 shows the divider ratios for each ADC input. The application firmware may select any group of
channels to be auto-sequenced in the round robin automatic readout mode.
Table 9-6. ADC Inputs
CHANNEL
SIGNAL
TYPE
DIVIDER RATIO
BUFFERED
0
1
I_TVSP
Current
n/a
No
IN
Voltage
17
No
2
LDO_3V3
Voltage
3
No
3
PA_VBUS
Voltage
21
No
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Table 9-6. ADC Inputs (continued)
CHANNEL
SIGNAL
TYPE
DIVIDER RATIO
BUFFERED
4
GPIO4 | PB_VBUS
Voltage
21
No
5
IPA_VBUS
Current
n/a
No
6
GPIO2 | PB_DP
Voltage
3
Yes
7
GPIO3 | PB_DM
Voltage
3
Yes
8
GPIO5 | NTC
Voltage
3
Yes
9
GPIO7 | PA_DM
Voltage
3
Yes
10
GPIO8 | PA_DP
Voltage
3
Yes
11
LDO_5V
Voltage
5
No
9.3.8 BC 1.2, Legacy and Fast Charging Modes (Px_DP, Px_DM)
BC 1.2 downstream port charger emulation is application GUI configurable. The following charging modes can
be enabled or disabled:
•
•
•
•
DCP (Dedicated Charging Port) Shorted Mode
Divider-3 Mode
1.2-V Mode
HVDCP (High Voltage Dedicated Charging Port) Mode
The following table shows voltage sources, resistors and comparator hardware used in each mode. Symbol "X"
represents that the corresponding module is implemented.
Application
2.7-V SRC
1.2-V SRC
RDCP_DAT
DCP
RDM_DWN
(20 kΩ)
VDAT_REF
VSEL_REF
X
X
X
X
Divider-3
X
1.2 V
X
X
HVDCP
BC1P2 DCP &
Legacy Charging
HVDCP
OVP COMPARATORS
VDAT_REF
+
VSEL_REF
dp_ovp
+
RDCP_DAT
dm_ovp
+
SW
Px_DP
Digital Core
MUX
dm_ovp
SW
Px_DM
R_2.7V
R_2.7V
+
R_1.2V
dm_ovp
VSEL_REF
+
VDAT_REF
+
RDM_DWN
(20k)
V_2.7V
V_1.2V
Figure 9-31. BC1P2 Functional Diagram
9.3.9 USB2.0 Low-Speed Endpoint
The USB low-speed Endpoint is a USB 2.0 low-speed (1.5 Mbps) interface used to support HID class based
accesses. The TPS25762-Q1 supports control of endpoint EP0. This endpoint enumerates to a USB 2.0 host
during firmware update mode. Firmware update mode is entered with when the device is powered on with an
RTVSP corresponding to TVSP Index 8.
Figure 9-32 shows the USB Endpoint physical layer. The physical layer consists of the analog transceiver, the
Serial Interface Engine, and the Endpoint FIFOs and supports low-speed USB operation.
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LDO_3V3
SW
RPU_EP
To Digital
Core
32
EP_TX_DP
EP0
TX/RX
FIFO
Serial
Interface
Engine
Digital Core
Interrupts
and Control
RX/TX
Status
Control
EP_TX_DM
RS_EP
+
PA_DP
RS_EP
-
PA_DM
+
EP_RX_RCV
EP_RX_DP
EP_RX_DM
Transceiver
Figure 9-32. USB Endpoint PHY
The transceiver is made up of a fully differential output driver, a differential to single-ended receive buffer and
two single-ended receive buffers on the D+/D– independently. The output driver drives the D+/D– through a
source resistance RS_EP. RPU_EP is disconnected during transmit mode of the transceiver.
When the endpoint is in receive mode, the resistance RPU_EP is connected to the PA_DM pin. The RPU_EP
resistance advertises low speed mode only.
9.3.10 Digital Interfaces
The TPS25762-Q1 contains one I2C controller which used for communicating with I 2C target devices. Depending
upon application GUI firmware configuration, an I2C target and GPIOs may be available.
9.3.10.1 General GPIO
An application configuration GUI manages the multi-function pins which contain General Purpose Input/Output
functionality. Each buffer is configurable to be a push-pull output or open drain output. When configured as an
input, the signal can be a de-glitched digital input or an analog input to the ADC (only designated pins). The
push-pull output is a simple CMOS totem-pole structure. Independent pull-up and pull-down enables can be
configured using the application GUI. When interfacing with non 3.3-V I/O devices the output buffer should be
configured as an open drain output and an external pull-up resistor attached to the GPIO pin.
9.3.10.2 I2C Buffer
The TPS25762-Q1 features two I2C interfaces that each use an I2C I/O driver like the one shown in Figure 9-33.
This I/O consists of an open-drain output and an input comparator with de-glitching.
deglitch
SCL/SDA
Digital
Core
GND
Figure 9-33.
I2C
Driver
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9.3.11 I2C Interface
The TPS25762-Q1 has two I2C ports. I2C1 is a controller interface. I2C2 is a target interface.
I2C1 is used to read from or write to external target devices. During boot I2C1 is configured to read firmware
patch and application configuration data from an external EEPROM with target address 0x50.
Depending upon application configuration, the TPS25762-Q1 may expose target port, I2C2, using multi-function
pins: GPIO2 (I2C_SCL2), GPIO3 (I2C_SDA2). When the TPS257xx-Q1 is used in systems with a HUB or MCU,
the I2C2 port can provide connection status and telemetry information as well as transfer firmware updates from
the HUB or MCU to an EEPROM connected on I2C1.
IRQ functionality depends upon firmware application configuration. IRQ is not always available on both I2C1 and
I2C2 simultaneously. the IRQ is available as follows:
• Multi-function pin GPIO9: IRQ1(i), IRQ1(o), IRQ2(o)
• Multi-function pin GPIO1: IRQ2(o)
Where (i) = operates as an input, and (o) = operates as output.
In HUB applications where I2C control is not used, GPIO9 can be configured as a simple FAULT pin reporting
port over-current conditions as required by the USB 2.0 specifications.
Table 9-7. I2C Summary
I2C Bus
Type
Typical Usage
Max Bus Frequency
I2C
I2C1c
I2C2t
Connect to
EEPROM, USB Type-C mux, I2C temperature sensor, I2C
Controller GPIO expander, or other I2C target. Use LDO_5V or LDO_3V3 pin as the
pull-up voltage. Multi-controller configuration is not supported.
Target
Connect to I2C capable USB HUB, MCU or automotive processor.
1 MHz (Fast Mode Plus)
1 MHz (Fast Mode Plus)
9.3.11.1 I2C Interface Description
The I2C1 and I2C2 ports support Standard, Fast Mode, and Fast Mode Plus I2C interfaces. The bidirectional I2C
bus consists of the serial clock (SCL) and serial data (SDA) lines. Both lines must be connected to a supply
through a pull-up resistor. Data transfer may be initiated only when the bus is not busy.
A controller sending a Start condition, a high-to-low transition on the SDA input/output, while the SCL input is
high initiates I2C communication. After the Start condition, the device address byte is sent, most significant bit
(MSB) first, including the data direction bit (R/W).
After receiving the valid address byte, this device responds with an acknowledge (ACK), a low on the SDA
input/output during the high of the ACK-related clock pulse. On the I2C bus, only one data bit is transferred
during each clock pulse. The data on the SDA line must remain stable during the high pulse of the clock period
as changes in the data line at this time are interpreted as control commands (Start or Stop). The controller sends
a Stop condition, a low-to-high transition on the SDA input/output while the SCL input is high.
Any number of data bytes can be transferred from the transmitter to receiver between the Start and the Stop
conditions. Each byte of eight bits is followed by one ACK bit. The transmitter must release the SDA line before
the receiver can send an ACK bit. The device that acknowledges must pull down the SDA line during the ACK
clock pulse, so that the SDA line is stable low during the high pulse of the ACK-related clock period. When a
target receiver is addressed, it must generate an ACK after each byte is received. Similarly, the controller must
generate an ACK after each byte that it receives from the target transmitter. Setup and hold times must be met to
ensure proper operation.
A controller receiver signals an end of data to the target transmitter by not generating an acknowledge (NACK)
after the last byte has been clocked out of the target. The controller receiver holding the SDA line high does
this. In this event, the target transmitter must release the data line to enable the controller to generate a Stop
condition.
Figure 9-34 shows the start and stop conditions of the transfer. Figure 9-35 shows the SDA and SCL signals for
transferring a bit. Figure 9-36 shows a data transfer sequence with the ACK or NACK at the last clock pulse.
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SDA
SCL
S
P
Start Condition
Stop Condition
Figure 9-34. I2C Definition of Start and Stop Conditions
SDA
SCL
Data Line
Figure 9-35.
Change
I2C
Bit Transfer
Data Output
by Transmitter
Nack
Data Output
by Receiver
SCL From
Master
Ack
1
2
8
9
S
Clock Pulse for
Acknowledgement
Start
Condition
Figure 9-36. I2C Acknowledgment
9.3.11.2 I2C Clock Stretching
Clock stretching for I2C2. The target I2C port may hold the clock line (SCL) low after receiving (or sending) a
byte, indicating that it is not yet ready to process more data. The controller communicating with the target must
not finish the transmission of the current bit and must wait until the clock line actually goes high. When the target
is clock stretching, the clock line remains low.
The controller must wait until it observes the clock line transitioning high plus an additional minimum time (4 μs
for standard 100-kbps I2C) before pulling the clock low again.
Any clock pulse may be stretched but typically it is the interval before or after the acknowledgment bit.
9.3.11.3 I2C Address Setting
A HUB, MCU, or automotive processor host should only use I2C_SCL2 and I2C_SDA2 for loading a firmware
patches or general status communication. Once the boot process is complete, each I2C port is assigned a
unique target address as determined by the TVSP pin. The target address used by each port on the I2C2s bus
are determined from the application configuration.
9.3.11.4 Unique Address Interface
The Unique Address Interface allows for complex interaction between an I2C controller and a single TPS25762Q1. The I2C target sub-address is used to receive or respond to Host Interface protocol commands. Figure 9-37
and Figure 9-38 show the write and read protocol for the I2C target interface, and a key is included in Figure
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9-39 to explain the terminology used. The key to the protocol diagrams is in the SMBus Specification and is
repeated here in part.
1
7
1
1
8
1
8
1
8
1
S
Unique Address
Wr
A
Register Number
A
Byte Count = N
A
Data Byte 1
A
8
1
8
1
Data Byte 2
A
Data Byte N
A
P
Figure 9-37. I2C Unique Address Write Register Protocol
1
7
1
1
8
1
1
7
1
1
8
1
S
Unique Address
Wr
A
Register Number
A
Sr
Unique Address
Rd
A
Byte Count = N
A
8
1
8
1
8
1
Data Byte 1
A
Data Byte 2
A
Data Byte N
A
P
1
Figure 9-38.
I2C
Unique Address Read Register Protocol
1
7
1
1
8
1
1
S
Slave Address
Wr
A
Data Byte
A
P
x
x
S
Start Condition
SR
Repeated Start Condition
Rd
Read (bit value of 1)
Wr
Write (bit value of 0)
x
Field is required to have the value x
A
Acknowledge (this bit position may be 0 for an ACK or
1 for a NACK)
P
Stop Condition
Master-to-Slave
Slave-to-Master
Continuation of protocol
Figure 9-39. I2C Read/Write Protocol Key
9.3.11.5 I2C Pullup Resistor Calculation
Typical value for RP, the I2C pullup resistor is given by:
RP = tr / (0.8473 × Cb)
Refer to Table 9-8 for values of tr, Cb and VOL.
Table 9-8. Parametrics from I2C Specifications
Standard Mode
(Max)
Fast Mode
(Max)
Fast Mode Plus
(Max)
Unit
SCL clock frequency
100
400
1000
kHz
Rise time of both SDA and SCL signals
1000
300
120
ns
Capacitive load for each bus line
400
400
550
pF
Parameter
fSCL
tr
Cb
60
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Table 9-8. Parametrics from I2C Specifications (continued)
Standard Mode
(Max)
Fast Mode
(Max)
Fast Mode Plus
(Max)
Unit
Low-level output voltage (at 3-mA current sink, VDD
> 2 V)
0.4
0.4
0.4
V
Low-level output voltage (at 2-mA current sink, VDD
≤ 2 V)
–
0.2 × VDD
0.2 × VDD
V
Parameter
VOL
For additional background regarding I2C pullup resistor calculations, please refer to application report, I2C Bus
Pullup Resistor Calculation.
9.3.12 Digital Core
Figure 9-40 shows a simplified block diagram of the digital core.
GPIO0-9
I2C to
HUB, MCU, or
Automotive
processor
Memory
I2C_SDA2
I2C
Port 2
(target)
I2C_SCL2
Processor
IRQ
MUX
I2C_IRQx
Digital Core
I2C to EEPROM,
PB_DC/DC, USB
redrivers
I2C_SDA1
CBL_DET
Bias CTL
and USB-PD
USB PD Phy
I2C
Port 1
(controller)
I2C_SCL1
Buck-Boost
Control
OSC
Buck-Boost
Converter
ADC Read
Thermal
Shutdown
Temp
Sense
ADC
Figure 9-40. Digital Core Simplified Block Diagram
9.3.12.1 Device Memory
The digital core contains a combination of ROM, SRAM, and OTP. ROM and SRAM function as the storage
and operational space for application firmware. OTP contains boot configuration settings. There are 27 kBytes of
SRAM, 160 kBytes of ROM, and 512 bytes of OTP.
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9.3.12.2 Core Microprocessor
The digital core is an ARM M0+ clocked at 24MHz with zero wait states.
9.3.13 NTC Input
The NTC pin is used by the device firmware to monitor system temperature. Rising or falling voltages on the
NTC pin indicate increasing or decreasing system temperatures, respectively. To achieve a positive temperature
slope on the TPS25762-Q1 NTC pin, thermistors should be connected to LDO_3V3 as shown in Figure 9-41.
LDO_3V3
LDO_3V3
RNTC
RBIAS
NTC
NTC
ADC
ADC
RTMP61
RBIAS
(b) NTC Connection
(a) TI TMP61 Sensor
Figure 9-41. Thermistor Connections (a) PTC, (b) NTC
See Figure 9-42 and Figure 9-43. Using the application configuration GUI, the user can configure system power
policy management responses for up to three VNTC voltages.
LDO_3V3
VNTC
RNTC
3.3V
RNTC
VNTC
T (°C)
VNTC_Ph3_R
VNTC_Ph3_F
VNTC_Ph2_R
VNTC_Ph2_F
VNTC_Ph1_R
VNTC_Ph1_F
RBIAS
0V
25
50
75
100
125
T (°C)
Figure 9-42. NTC Response Curve
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LDO_3V3
VNTC
3.3V
RBIAS
VNTC
RTMP61
VNTC_Ph3_R
VNTC_Ph3_F
VNTC_Ph2_R
VNTC_Ph2_F
VNTC_Ph1_R
VNTC_Ph1_F
RTMP61
0V
25
50
75
100
125
T (°C)
T (°C)
Figure 9-43. TMP61 PTC Response Curve
Note
For optimum accuracy, use the VLDO_3V3 specifications in Electrical Characteristics tables when
performing resistor divider calculations.
9.3.14 Thermal Sensors and Thermal Shutdown
There are five internal thermal sensors in the TPS25762-Q1 devices:
• TSD_BB. Two diode OR'ed thermal sensors to monitor buck-boost power FETs. Disables buck-boost regulator
when asserted. USB-PD engine enters error recovery.
• TSD_PA_VCONN. One thermal sensor located in the PA_VCONN path. Opens PA_VCONN FET during overtemperature event. USB-PD engine enters error recovery.
•
• TSD_PA_VBUS_DISCH. One thermal sensor located in the PA_VBUS discharge path. Opens PA_VBUS discharge
FET during over-temperature. Closes PA_VBUS discharge FET when temperature decreases below falling
hysteresis. (TSD_HYS) if PA_VBUS is above discharge threshold set by firmware during decreasing VBUS
transition.
• TSD_LDO5V. One thermal sensor located in the LDO_5V regulator. Operates as master thermal shutdown.
Disables device completely during over-temperature events causing M0 to hard reset. Allows device
operation when temperature decreases below falling hysteresis (TSD_HYS).
9.4 Device Functional Modes
Shutdown Mode
The EN/UVLO pin provides electrical ON and OFF control for the TPS25762-Q1. When VEN/UVLO is below 1.15
V (typ), the device is in shutdown mode in which the Cortex M0 is disabled and only minimal analog functions
are operating. Refer to VIN UVLO and Enable/UVLO section for the detailed description of the EN/UVLO pin
functionality.
Active Mode
The TPS25762-Q1 enters active mode when VEN/UVLO is above its rising threshold, VEN(OPER), and the supply
voltage on the IN pin is above the VIN undervoltage lockout threshold, VIN(UVLO_R). In active mode, the internal
analog circuits are fully operational with the M0 enabled and executing firmware from ROM.
At the onset of active mode, firmware boot code will attempt to measure the resistance on the TVSP pin and
decode a TVSP Index value. Upon successful configuration and firmware patch load, the device is ready to
begin operation per configuration settings stored on the external EEPROM. If the configuration and patch data
do not load successfully due to communications error the device will continue to operate with only Port A
enabled with standard Type-C functionality. Index value 8 is reserved for use when updating device configuration
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and firmware patch information through the TPS25762-Q1 GUI and Port A connection. Once device boot is
complete, device firmware will control and manage USB connections in accordance with loaded application
configuration settings.
64
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10 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
10.1 Application Information
The TPS25762-Q1 application GUI provides default settings suitable for most applications.
The most common implementations are dual port USB PD charger and dual port USB PD with USB
HUB. Consult the TPS2576x, TPS2577x Configuration GUI User's Guide and application GUI for additional
configurations.
Battery
EN
LDO5V
LDO3V3
LDO1V5
AGND
TVSP
FW
Update
PGND
PA_CC1
PA_CC2
GPIO7
GPIO8
CSN/BUS
CSP
OUT
SCL2
SDA2
SYNC
IRQ
SCL1
SDA1
PORT A
IN
ON
OFF
TYPE-C CONNECTOR
VBAT
3-21V
3V3
LS_GD
NTC
GPIO0
GPIO1
Figure 10-1. Simplified Single USB PD Charger
VBAT
5V
EN
SYNC
LDO_5V
BUCK
SYNC
FW
Update
TVSP
3V3
3V3
LDO
LDO_3V3
LDO_1V5
DP
AGND
DM
MCU/HUB
IRQ
SCL2
SDA2
PGND
PA_CC1
PA_CC2
GPIO7
GPIO8
CSN/BUS
CSP
OUT
FAULT
DP
DM
PORT A
Battery
OFF
TYPE-C CONNECTOR
IN
ON
3V3
LSGD
NTC
TMP61
SCL1
SDA1
GPIO0
GPIO1
Figure 10-2. Simplified Single USB PD with MCU/HUB
Typical Application describes a detailed step-by-step design procedure for a typical charger application circuit.
10.2 Typical Application
Figure 10-3 Shows a typical example of a 65 W output automotive USB Type-C Power Delivery port. The device
is internally compensated and optimized for components shown in Table 10-1.
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CBOOT1
CSNB
RSNB
RSNB
RBOOT2
RBOOT1
RSNB
RSNB
L
CBOOT2
CSNB
PGND
PGND
SW1
BOOT1
LFILT
FB
CFILT1
CFILT2
7 ~ 18V
CFILT3
CFILT4
CIN_BULK
CIN
TVS
SW2
M1
CIN_HF
IN
BOOT2
M3
M2
M5
CSN/BUS
M4
RCSN
CFILT
RCSP
PGND
RENT
CSP
FB
PGND
0.1 µF
LM74700
PGND
RSNS = 10 m
OUT
EN/UVLO
PGND
COUT_HF
RENB
PGND
COUT
CBUS
PGND
AGND
PGND
5V
AGND
LDO_5V
C5V
C5V_HF
330 pF
AGND
AGND
330 pF
PA_CC1
PGND
RFW_UPDATE
RTVSP_DAMP
TVSP
ESD
AGND
AGND
ESD
ESD
AGND
AGND
PA_DP
PA_DM
CTVPS_REG
PA_LSGD
CTVPS_DAMP
FW
UPDATE
ESD
AGND
PA_CC2
USB TYPE-C CONNECTOR
(Port A)
Input Overvoltage Protection, Reverse Polarity Protection and EMI Filter
3V3
3V3
LDO_3V3
RB
AGND
RP
RP
C3V3_HF
RP
C3V3
PGND
I2C_SCL1
CBYP
I2C_SDA1
TMP61
NTC
1V5
AGND
EEPROM
IRQ
LDO_1V5
C1V5
GPIO0
C1V5_HF
AGND
GPIO1
I2C_SCL2
AGND
I2C_SDA2
Figure 10-3. TPS25762-Q1 Application Schematic
Table 10-1. Recommended Inductors, Input and Output Capacitance
•
66
fSW
CIN + CHF
L
MIN of COUT + CBUS
COUT + CHF
CBUS
300
22 µF + 2 × 0.1 µF
4.7 µH
160 µF
30 µF + 2 × 0.1 µF
130 µF + 2 × 0.1 µF
400
22 µF + 2 ×0.1 µF
4.7 µH
120 µF
30 µF + 2 × 0.1 µF
90 µF + 2 × 0.1 µF
400
22 µF + 2 × 0.1 µF
3.3 µH
140 µF
30 µF + 2 × 0.1 µF
110 µF + 2 × 0.1 µF
450
22 µF + 2 × 0.1 µF
3.3 µH
140 µF
30 µF + 2 × 0.1 µF
110 µF + 2 × 0.1 µF
50 V rated capacitors recommended.
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26
27
HF_CAP
28
29
HF_CAP
25
2
24
3
23
5
22
IN
SW1
SW2
OUT
4
PGND
1
21
17
15
HF_CAP
BOOT1 16
HF_CAP
14
18
13
8
12
19
11
7
BOOT2 10
20
9
6
Inductor
Figure 10-4. Input and Output CHF Capacitor Placement
To ensure adequate decoupling of VIN and VOUT and robust device operation, use two 0.1 μF, CHF capacitors
per node, placed on opposite sides of the IC package, as close to the pins as possible. Typically, the inductor is
placed on the same PCB layer (top or bottom) as the IC package. The CHF capacitors on the inductor end of the
IC package may be placed on the opposite side of the PCB (bottom or top) using vias to minimize trace length
from the inductor side IN and OUT pins to the physical location of these capacitors.
Table 10-2. Recommended SWx Snubber and Current Sense Filter Components
SW1 (1)
SW2 (2)
CSP & CSN Filter (3)
RSNB (0.25 W)
CSNB (50 V)
RSNB (0.25 W)
CSNB (50 V)
RCSP (0.1 W)
RCSN (0.1 W)
2.2 Ω || 2.2 Ω
1 nf
2.2 Ω || 2.2 Ω
3.3 nF
10 Ω
0Ω
CFLT (50 V)
0.22 μF
1. As needed for EMI mitigation - user optional. (Use of this snubber can also aid in supporting devices with
high initial inrush load current that exceeds the power delivery specification.)
2. Required for robust device operation.
3. Required to meet USB-IF current regulation requirements.
10.2.1 Design Requirements
For this example, Table 10-3 are used as the target parameters.
Table 10-3. Design Inputs
DESIGN PARAMETER
EXAMPLE VALUE
Input Voltage Range
6.8 V to 18 V (transients to 36 V)
UVLO Turn on Voltage
6.5 V
USB PD Power
65 W
USB PD VBUS Voltages
5 V, 9 V, 15 V, 20 V and 3.3 to 21 V (PPS)
Output
3.3 - 21 V
Load Current
PDO: 5 V, 3 A; 9 V, 3 A; 15 V, 3 A, 20 V, 3.25 A
APDO: 3.3 - 21 V, 3 A
Switching Frequency
400 kHz
VCONN
0.1 W
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Table 10-3. Design Inputs (continued)
DESIGN PARAMETER
EXAMPLE VALUE
Automotive Module Maximum Current
15 A
10.2.2 Detailed Design Procedure
10.2.2.1 Application GUI Selections
Use the application GUI to select the desired operating conditions. Once complete, save the settings to the
programming PC, flash the firmware to EEPROM, and power cycle device. Once complete the TPS25762-Q1
will be ready for operation.
Table 10-4. Application GUI Selections
PARAMETER
GUI SELECTION
BUCK-BOOST AND USB INPUTS
Port A VBUS Power
65 W
Port A PDOs and APDOs
PDO: 5 V, 3 A; 9 V, 3 A; 15 V, 3 A; 20 V, 3.25 A
APDO: 3.3 - 21 V, 3A
Port A VCONN Power
0.1 W
fSW Switching Frequency
400 kHz
L Inductor
4.7 µH
Automotive Module Maximum Current
15 A
LOW BATTERY INPUTS
Engine ON voltage
12.5 V
Engine OFF voltage
11 V
Run timer after engine off
600 seconds
THERMAL MANAGEMENT INPUTS
VNTC_PHASE1
1.65 V
NTC_PHASE1 Power as Percentage of MAX
50 %
VNTC_PHASE2
2.1 V
NTC_PHASE2 Power as Percentage of MAX
30 %
VNTC_PHASE3
2.4 V
NTC_PHASE3 Power as Percentage of MAX
0 % (disable PA_VBUS)
10.2.2.2 EEPROM Selection
An EEPROM is required to store user application configuration data as any firmware patch updates released by
Texas Instruments during the life of the product.
Basic requirements:
• 32kB (256kb)
• 7 Bit I2C address (0x50)
• Organization: 32kb x 8 (totals 256kb)
• Active firmware image is stored in one 16kb x 8 partition. The previous firmware image is retained in the other
16kb x 8 partition for reliability.
• Page size/buffer should be 64b
Table 10-5. Suggested EEPROMs
Manufacturer
68
Part Number
On Semi
CAV24C256
Microchip
24LC256
ST Micro
M24256
Rohm
BRA24T512=3AM
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10.2.2.3 EN/UVLO
The TPS25762-Q1 has a fixed VIN(UVLO) with rising and falling thresholds between 5 and 5.5 V, refer to Section
7.6 for exact values. The falling threshold, VIN(UVLO_F), disables the device when the battery voltage is too low for
continued operation. To establish a turn on voltage higher than VIN(UVLO_R), connect a resistor divider from the IN
supply voltage to the EN/UVLO pin. When VEN/UVLO > VEN(OPER), nominally 1.25 V, the device exits low power
shutdown and begins to startup.
In this example a VIN turn on voltage of approximately 6.5 V is required. Use the equations and examples below
to determine the required resistor values.
•
•
Choose standard value RENB = 22 kΩ.
Calculate RENT
V
RENT = V ON
− 1 × RENB
EN OPER
•
•
(3)
6.5 V
RENT = 1.25 V
− 1 × 22 kΩ = 92.4 kΩ
Select a standard value of 91 kΩ.
Using 22 kΩ and 91 kΩ. Rearranging Equation 3 results in
R
VON = RENT + 1 × VEN OPER
ENB
•
(6)
Calculate VOFF
VEN HYS
× VON
(7)
0.1 V
VOFF = 1 − 1.25 V
× 6.42 V = 5.91 V
(8)
Lastly, confirm the selected resistors do not trigger the EN/UVLO pin MAX clamp voltage. Assuming 36 V as
a maximum VIN transient.
VEN/UVLO MAX =
•
(5)
VON = 91 kΩ
22 kΩ + 1 × 1.25 V = 6.42 V
VOFF = 1 − V
EN OPER
•
(4)
VIN MAX × RENB
RENT + RENB
(9)
36 V × 22 kΩ
VEN/UVLO MAX = 22 kΩ
+ 91 kΩ = 7 V
(10)
The result, 7 V, is less than the EN/UVLO pin maximum clamp voltage.
10.2.2.4 Sense Resistor, RSNS, RCSP, RCSN and CFILT
The TPS25762-Q1 requires a 10-mΩ resistance between the CSP and CSN/BUS pins. For accurate current limit
regulation, ±1% precision or better is required. For a DC output current of 3.25 A, the power dissipation in the
resistor is
I2R, or (3.25 A)² × 0.01 Ω = 0.106 W.
A power resistor with 0.33-W rating, ± 1% tolerance and 2010 case is chosen. Check the manufacturers power
derating curves when selecting the component. Most derate maximum power above 70°C.
An RC filter network is required on the CSP and CSN/BUS pins for proper USB PD PPS current limit accuracy.
A filter network with RCSP = 10 Ω, RCSN = 0 Ω, and filter capacitor, CFILT = 0.22 μF is recommended. Suggested
RC filter component ratings are shown in Table 10-2. RCSN must be zero ohm to avoid interfering with the VBUS
discharge functionality.
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CSN/BUS
RCSN
CFILT
RCSP
CSP
RSNS = 10 m
OUT
COUT_HF
COUT
CBUS
To Type-C
Connetor
PGND
PGND
AGND
AGND
Figure 10-5. Current Sense Amplifier: RC Filter Components
10.2.2.5 Inductor Currents
Table 10-1 lists recommended inductor values based on desired switching frequency, fSW. The following
equations were used to derive the values in the Buck Calculation and Boost Calculation results tables below.
DBUCK =
VOUT
VIN(MAX) ×
DBOOST = 1 -
(11)
VIN(MIN) ×
VOUT
(12)
where
•
•
•
•
•
•
VIN(MAX) = maximum input voltage
VIN(MIN) = minimum input voltage
VOUT = output voltage
DBUCK = minimum duty cycle for buck mode
DBOOST = maximum duty cycle for boost mode
η = estimated efficiency calculated at VIN, VOUT, and IOUT
Buck Mode
ISW_BUCK(MAX) =
'IL_BUCK(MAX) =
'IL_BUCK(MAX)
2
+ IOUT
(13)
(VIN(MAX) - VOUT(MIN)) × DBUCK
fSW × L
(14)
where
•
•
•
•
70
VIN(MAX) = maximum input voltage
VOUT(MIN) = minimum output voltage
IOUT = maximum DC output current
ΔIL-BUCK(MAX) = maximum ripple current through the inductor when in buck operation
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•
•
•
•
SLVSGL9 – DECEMBER 2022
ISW_BUCK(MAX) = maximum switch current when in buck operation
DBUCK = minimum duty cycle for buck operation
fSW = switching frequency of the converter
L = selected inductor value
IMAXOUT(BUCK) = IPEAK(BUCK) ±
'IL_BUCK(MAX)
2
(15)
where
•
•
•
IMAXOUT(BUCK) = maximum deliverable current through inductor by the converter
IPEAK(BUCK) = buck switch peak current limit from Electrical Characteristics table
ΔIL_BUCK(MAX) = Ripple current through the inductor calculated in Equation 14.
Boost Mode
'IL_BOOST(MAX)
ISW_BOOST(MAX) =
2
+
IOUT
1 ± DBOOST
(16)
VIN(MIN) × DBOOST
'IL_BOOST(MAX) =
fSW × L
(17)
where
•
•
•
•
•
•
•
•
VIN(MIN) = minimum input voltage
VOUT(MAX) = desired output voltage
IOUT = desired output current
ΔIL_BOOST(MAX) = maximum ripple current through the inductor in boost operation
ISW_BOOST(MAX) = maximum switch current in boost operation
DBOOST = maximum duty cycle for boost operation
fSW= switching frequency of the converter
L = selected inductor value
(
IMAXOUT(BOOST) = IPEAK(BOOST) ±
'IL_BOOST(MAX)
2
)
× (1 ± DBOOST)
(18)
where
•
•
•
•
IMAXOUT(BOOST) = maximum deliverable current through inductor by the converter
DBOOST = maximum duty cycle for boost mode
IPEAK(BOOST) = boost switch peak current limit from from Electrical Characteristics table
ΔIL_MAX(BOOST) = Ripple current through the inductor calculated in Equation 17.
Buck Operation
Table 10-6 provides the tabulated ΔIL_BUCK(MAX) and ISW_BUCK(MAX) for the conditions below.
•
•
•
•
η = 0.95
VIN(MAX) = 18 V
VOUT(MIN) = 3.3 V
DBUCK(MIN) = 0.193
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Table 10-6. Buck Calculation Results (L = 4.7 µH), IBUS = 3 A
fSW
(kHz)
IOUT
(A)
ΔIL_BUCK(MAX)
(A)
ISW_BUCK(MAX)
(A)
300
3.00
2.87
4.44
400
3.00
2.15
4.08
450
3.00
1.91
3.96
300
3.00
2.01
4.01
400
3.00
1.51
3.76
450
3.00
1.34
3.67
Boost Operation
Table 10-7 provides the tabulated ΔIL_BOOST(MAX), ISW_BOOST(MAX), suggested GUI IPEAK(BOOST) (MIN) settings for
the maximum output power conditions shown below.
If ISW_BOOST(MAX) > IPEAK(BOOST) (MIN) → VBUS dropout likely.
If ISW_BOOST(MAX) < IPEAK(BOOST) (MIN) → VBUS regulates normally.
•
•
•
•
η = 0.95
VIN(MIN) = 5.5 V to 9 V
VOUT(MAX) = 21 V
IOUT = 3 A
To be noted, the calculation here uses 21V 3 A instead of 20 V 3.25A because 21 V 3A has bigger inductor peak
current.
Table 10-7. Boost Calculation Results (L = 4.7 µH), IBUS = 3 A
fSW
(kHz)
300
400
72
VIN(MIN)
(V)
DBOOST(MAX)
ΔIL_BOOST(MAX)
(A)
ISW_BOOST(MAX)
(A)
GUI (1)
IPEAK(BOOST)
(A)
5.5
0.751
2.93
13.51
12.3
6
0.729
3.10
12.62
12.3
6.5
0.706
3.25
11.83
12.3
7
0.683
3.39
11.16
12.3
7.5
0.661
3.52
10.61
10.8
8
0.638
3.62
10.10
10.8
8.5
0.615
3.71
9.65
10.8
9
0.593
3.79
9.27
9.3
5.5
0.751
2.20
13.15
12.3
6
0.729
2.33
12.24
12.3
6.5
0.706
2.44
11.42
12.3
7
0.683
2.54
10.73
10.8
7.5
0.661
2.64
10.17
10.8
8
0.638
2.71
9.64
10.8
8.5
0.615
2.78
9.18
9.3
9
0.593
2.84
8.79
9.3
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Table 10-7. Boost Calculation Results (L = 4.7 µH), IBUS = 3 A (continued)
fSW
(kHz)
450
(1)
VIN(MIN)
(V)
DBOOST(MAX)
ΔIL_BOOST(MAX)
(A)
ISW_BOOST(MAX)
(A)
GUI (1)
IPEAK(BOOST)
(A)
5.5
0.751
1.95
13.02
12.3
6
0.729
2.07
12.11
12.3
6.5
0.706
2.17
11.29
12.3
7
0.683
2.26
10.59
10.8
7.5
0.661
2.34
10.02
10.8
8
0.638
2.41
9.49
9.3
8.5
0.615
2.47
9.03
9.3
9
0.593
2.51
8.63
9.3
MIN value of boost peak ILIM shown. See electrical characteristics table for MIN, TYP, MAX values.
10.2.2.6 Output Capacitor
In the boost mode, the output capacitor conducts high ripple current. The output capacitor RMS ripple current is
given by Equation 19 where the minimum VIN corresponds to the maximum capacitor current.
ICOUT(RMS)
IOUT u
VOUT
VIN
1
(19)
In this example the maximum output ripple RMS current is ICOUT(RMS) = 3.18 A. A 5-mΩ output capacitor ESR
causes an output ripple voltage of 34 mV as given by:
'VRIPPLE(ESR)
IOUT u VOUT
u ESR
VIN(MIN)
(20)
A 140 µF output capacitor (COUT + CBUS) causes a capacitive ripple voltage of 26 mV as given by:
'VRIPPLE(COUT)
VIN(MIN) ·
§
IOUT u ¨ 1
¸
VOUT ¹
©
COUT u Fsw
(21)
Typically a combination of ceramic and bulk capacitors is needed to provide low ESR and high ripple current
capacity. The complete schematic in Typical Application section provides COUT and CBUS recommendations
suitable for most applications.
10.2.2.7 Input Capacitor
In the buck mode, the input capacitor supplies high ripple current. The RMS current in the input capacitor is
given by:
ICIN(RMS)
IOUT D u (1 D)
(22)
The maximum RMS current occurs at D = 0.5, which gives ICIN(RMS) = IOUT/2 = 1.5 A. A combination of ceramic
and bulk capacitors should be used to provide short path for high di/dt current and to reduce the output voltage
ripple. Table 10-1 in the Typical Application section is a good starting point for CIN selection.
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10.2.3 Application Curves
VOUT = 5 V
100
Efficiency
80
60
VIN
VIN
VIN
VIN
VIN
=
=
=
=
=
7V
9V
12 V
15 V
18 V
40
0
0.3
0.6
0.9
1.2
1.5 1.8
IBUS (A)
2.1
2.4
2.7
3
L = 4.7 μH
L = 4.7 μH
Figure 10-6. Efficiency vs Output Current (IOUT),
VOUT = 5 V
Figure 10-7. Efficiency vs Output Current (IOUT),
VOUT = 9 V
VOUT = 15 V
100
Efficiency
80
60
VIN
VIN
VIN
VIN
VIN
=
=
=
=
=
7V
9V
12 V
15 V
18 V
40
0
0.3
L = 4.7 μH
0.9
1.2
1.5 1.8
IBUS (A)
2.1
2.4
2.7
3
L = 4.7 μH
Figure 10-8. Efficiency vs Output Current (IOUT),
VOUT = 12 V
Figure 10-9. Efficiency vs Output Current (IOUT),
VOUT = 15 V
IBUS = 3 A
L = 4.7 μH
L = 4.7 μH
Figure 10-10. Efficiency vs Output Current (IOUT),
VOUT = 20 V
74
0.6
Figure 10-11. Efficiency vs Input Voltage
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VIN = 13.5 V
VBUS = 0 V to 5 V
IBUS = 0 A
Figure 10-12. Type-C Attach
VIN = 13.5 V
VBUS = 5 V to 0 V
IBUS = 0 A
Figure 10-13. Type-C Detach
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VIN = 7 V
VBUS = 20 V
IBUS = 0 A
Figure 10-14. Boost Mode: Low VIN, No Load
VIN = 7 V
VBUS = 20 V
IBUS = 3 A
Figure 10-16. Boost Mode: Low VIN, 3 A Load
VIN = 12 V
VBUS = 20 V
IBUS = 0 A
Figure 10-18. Boost Mode: Nominal VIN, No Load
VIN = 12 V
VBUS = 5 V
IBUS = 3 A
Figure 10-20. Buck Mode: nominal VIN, 3 A Load
76
VIN = 18 V
VBUS = 5 V
IBUS = 0 A
Figure 10-15. Buck Mode: High VIN, No Load
VIN = 18 V
VBUS = 5 V
IBUS = 3 A
Figure 10-17. Buck Mode: High VIN, 3 A load
VIN = 12 V
VBUS = 5 V
IBUS = 0 A
Figure 10-19. Buck Mode: Nominal VIN, No Load
VIN = 12 V
VBUS = 13 V
IBUS = 0 A
Figure 10-21. Buck-Boost Mode: VIN ≨ VBUS, No
Load
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VIN = 12 V
VBUS = 12 V
IBUS = 0 A
Figure 10-22. Buck-Boost Mode: VIN = VBUS, No
Load
VIN = 12 V
VBUS = 12 V
IBUS = 3 A
Figure 10-24. Buck-Boost Mode: VIN = VBUS, 3 A
Load
VIN = 12 V
VBUS = 15 V
IBUS = 3 A
Figure 10-26. Buck-Boost Mode: Nominal VIN, 3 A
Load
VIN = 12 V
VBUS = 11 V
IBUS = 0 A
Figure 10-23. Buck-Boost Mode: VIN ≩ VBUS, No
Load
VIN = 12 V
VBUS = 15 V
IBUS = 0 A
Figure 10-25. Buck-Boost Mode: Nominal VIN, No
Load
VIN 12 V ➔ 20 V
Figure 10-27. VIN(OVP) Entry
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VIN 20 V ➔ 12 V
VIN 12 V ➔ 20 V
Figure 10-28. VIN(OVP) Recovery
VIN = 13.5V
VBUS = 5 V
IBUS = 0 A
Figure 10-29. VIN(OVP) Showing VBUS Discharge
IBUS 0 A ➔ 3 A
Figure 10-30. Load Transient (Buck): VBUS = 5 V
VIN = 13.5V
VBUS = 9 V
IBUS 0 A ➔ 3 A
Figure 10-31. Load Transient (Buck): VBUS = 9 V
VIN
650 mV/div
VIN
650 mV/div
VBUS
650 mV/div
VBUS
650 mV/div
I_IN
1.48 A/div
I_IN
1.1 A/d iv
IBUS
558 mA/div
IBUS
577 mA/div
SW1
1.77 V/div
SW1
650 mV/div
SW2
1.93 V/div
SW2
2.45 V/div
VIN = 13.5V
VBUS = 15 V
IBUS 0 A ➔ 3 A
Figure 10-32. Load Transient (Buck-Boost): VBUS =
15 V
78
VBUS = 0 V
VIN = 13.5V
VBUS = 20 V
IBUS 0 A ➔ 3 A
Figure 10-33. Load Transient (Boost): VBUS = 20 V
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VIN 12 V
VBUS = 20 V
VIN
1.62 V/div
VBUS
650 mV/div
IBUS
98.3 mA/d iv
SW1
2.72 V/div
SW2
3.01 V/div
ILIMIT = 3.1 A
Figure 10-34. Current Limit: Stepped Resistive
Load
VIN 7 V ➔ 18 V
VBUS = 20 V
IBUS = 3 A
Figure 10-35. Line Transient: VBUS = 20 V
VIN
VIN
1.61 V/div
VBUS
650 mV/div
IBUS
86.1 mA/d iv
SW1
2.63 V/div
SW2
2.32 V/div
VIN 7 V ➔ 18 V
VBUS = 15 V
IBUS = 3 A
Figure 10-36. Line Transient: VBUS = 15 V
1.59 V/div
VBUS
317 mV/div
IBUS
79.6 mA/d iv
SW1
2.69 V/div
SW2
1.56 V/div
VIN 7 V ➔ 18 V
VBUS = 9 V
IBUS = 3 A
Figure 10-37. Line Transient: VBUS = 9 V
VIN
1.6 V/d iv
VBUS
330 mV/div
IBUS
99.6 mA/d iv
SW1
2.68 V/div
SW2
433 mV/div
VIN 7 V ➔ 18 V
VBUS = 5 V
IBUS = 3 A
Figure 10-38. Line Transient: VBUS = 5 V
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11 Power Supply Recommendations
The TPS25762-Q1 is a power management device typically operated from an automotive battery, though the
power supply for the device can be any dc voltage source within the specified VIN input range. The supply should
be capable of supplying sufficient current based on the maximum inductor current in boost mode operation. The
input supply should be bypassed with bulk capacitors at the input of the application board to avoid ringing due to
parasitic impedance of the connecting cables. A typical choice is an aluminum electrolytic capacitor of 47 to 100
μF.
80
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12 Layout
12.1 Layout Guidelines
The basic PCB board layout requires separation of sensitive signal and power paths. This checklist must be
followed to get good performance for a well designed board.
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•
•
•
•
•
•
•
•
•
•
•
•
Use a combination of bulk capacitors and smaller ceramic capacitors with low series impedance for the IN,
OUT, and VBUS capacitors. Place the smaller capacitors closer to the IC to provide a low impedance path for
high di/dt switching currents.
Refer to Table 10-1 for suggested CIN values. Place the input bypass capacitors, CIN and CIN_HF, as close
to the IN and PGND pins as possible to minimize the loop area for input switching current in buck operation.
The CIN_HF capacitors should be as close as possible - see Figure 10-4. The IN and PGND pins transverse
the package and it is highly recommended to split CIN and CIN_HF such that capacitors can be placed on
either side.
Place the output filter capacitors, COUT and COUT_HF, as close to the OUT and PGND pins as possible to
minimize the loop area for output switching current in boost operation. Refer to Table 10-1 for suggested
COUT and COUT_HF values.
Place the current sense resistor and filter components. RSNS, RCSP, RCSN, and CFLT. Place the filter capacitor
for the current sense signal as close to the IC CSP and CSN/BUS as possible. Use Kelvin connections
between RSNS through the CSP and CSN resistors and to the CSP and CSN/BUS pins to avoid creating
offsets in the current sense amplifier. Avoid crossing noisy areas such as SW1 and SW2 nodes. The
recommended values in Table 10-2 provide a good starting point but may require some fine adjustment to
meet PPS current limit accuracy requirements. When deviating from recommended values, RCSP must not be
larger than 10 ohms. RCSN must be 0 ohms. CFLT should not be larger than 0.33 μF.
Place CBUS between the RSNS and the USB Type-C connector. See Table 10-1 for suggested CBUS values. .
Place the CIN, COUT, and CBUS ground connections as close as possible to the IC with thick ground trace
and/or planes on multiple layers.
Minimize the SW1 and SW2 loop areas as these are high dv/dt nodes.
Place the LDO_5V bypass capacitors, C5V and C5V_HF close to the IC pin, between the LDO_5V and PGND
pins. A 4.7 µF and 0.1 µF ceramic capacitors are typically used. LDO_5V supplies LDO_3V3 and LDO_1V5
as well as the low side buck and boost MOSFETs.
Place the LDO_3V3 bypass capacitors, C3V3 and C3V3_HF close to the IC pin, between the LDO_3V3 and
AGND pins. A 4.7 µF and 0.1 µF ceramic capacitors are typically used. LDO_3V3 supplies the analog IO
circuits.
Place the LDO_1V5 bypass capacitors, C1V5 and C1V5_HF close to the IC pin, between the LDO_1V5 and
AGND pins. A 4.7 µF and 0.1 µF ceramic capacitors are typically used. LDO_3V3 supplies the Cortex M0
and digital circuits.
Place the BOOT1 bootstrap capacitor close to the IC and connect directly to the BOOT1 to SW1 pins. For
EMI mittigation, a series resistor RBOOT1 may be added.
Place the BOOT2 bootstrap capacitor close to the IC and connect directly to the BOOT2 to SW2 pins. For
EMI mittigation, a series resistor RBOOT2 may be added.
Bypass the TVSP pin to PGND with a low ESR ceramic capacitor, CTVSP located close to the IC. A 0.1 µF
ceramic capacitor is typically used. RTVSP_DAMP and CTVSP_DAMP should be added in parallel close to CTVSP.
10 Ω and 0.47 μF are recommended values.
Use care to separate the power and signal paths so that no power or switching current flows through the
AGND connections which can either corrupt the USB PD modem or GPIO signals. The PGND and AGND
traces can be connected near the AGND pin.
USB data lines, DP and DM should be differentially routed between the IC pins and USB connector.
Impedance control is based on the PCB stack-up. 90 Ω differential is recommended. Route the DP and
DM USB signals using a minimum of vias and corners which will reduce signal reflections and impedance
changes. When a via must be used, increase the clearance size around it to minimize its capacitance.
Each via introduces discontinuities in the signal’s transmission line and increases the chance of picking up
interference from the other layers of the board. Be careful when designing test points on twisted pair lines;
through-hole pins are not recommended. When it becomes necessary to turn 90°, use two 45° turns or an arc
instead of making a single 90° turn. This reduces reflections on the signal traces by minimizing impedance
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•
•
discontinuities. Avoid stubs on the high-speed USB signals because they cause signal reflections. If a stub is
unavoidable, then the stub should be less than 200 mm.
CC lines should be routed with a 10-mil trace to ensure the needed current for supporting powered Type-C
cables through VCONN. For more information on VCONN refer to the Type-C specifications. For the 330 pF
CC capacitor GND pins use a 16-mil trace if possible.
GPIO signals can be fanned out on the top or bottom layer using either a 8-mil or 10-mil trace.
12.2 Layout Example
Figure 12-1. TPS25762-Q1 Power Stage Layout
82
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13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
Please visit TI homepage for latest technical document including application notes, user guides, and reference
designs.
IC Package Thermal Metrics application report, Semiconductor and IC Package Thermal Metrics.
13.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
13.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
USB Type-C® is a registered trademark of USB Implementers Forum.
ARM® and Cortex® are registered trademarks of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
All trademarks are the property of their respective owners.
13.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
13.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
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14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS25762CQRQLRQ1
ACTIVE
VQFN-HR
RQL
29
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
TPS25762
C
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of