TPS2597
SLVSGG5C – NOVEMBER 2021 – REVISED APRIL 2023
TPS2597xx 2.7 V–23 V, 7-A, 9.8-mΩ eFuse With Accurate Current Monitor and
Transient Overcurrent Blanking
1 Features
3 Description
•
The TPS2597xx family of eFuses is a highly
integrated circuit protection and power management
solution in a small package. The devices
provide multiple protection modes using very few
external components and are a robust defense
against overloads, short-circuits, voltage surges and
excessive inrush current.
•
•
•
•
•
•
•
•
•
•
•
Wide operating input voltage range: 2.7 V to 23 V
– 28-V absolute maximum
Integrated FET with low on-resistance: RON = 9.8
mΩ (typ.)
Fast overvoltage protection
– Overvoltage clamp (OVC) with pin-selectable
threshold (3.89 V, 5.76 V, 13.88 V) and 5-μs
(typical) response time or
– Adjustable overvoltage lockout (OVLO) with
1.2-μs (typical) response time
Overcurrent protection with load current monitor
output (ILM)
– Active current limit or circuit-breaker options
– Adjustable threshold (ILIM) 0.87 A – 7.7 A
• ±10% accuracy for ILIM > 1.74 A
– Adjustable transient blanking timer (ITIMER) to
allow peak currents up to 2 × ILIM
– Output load current monitor accuracy: ±8%
(max)
Fast-trip response for short-circuit protection
– 550-ns (typical) response time
– Adjustable (2 × ILIM) and fixed thresholds
Active high enable input with adjustable
undervoltage lockout threshold (UVLO)
Adjustable output slew rate control (dVdt)
Overtemperature protection
Digital outputs
– Fault indication (FLT) or
– Power-Good indication (PG) with adjustable
threshold (PGTH)
UL 2367 recognition
– File No. E339631
– RILM ≥ 750 Ω
IEC 62368-1 CB certified
Small footprint: QFN 2 mm × 2 mm, 0.45-mm pitch
Output slew rate and inrush current can be adjusted
using a single external capacitor. Loads are protected
from input overvoltage conditions either by clamping
the output to a safe fixed maximum voltage (pin
selectable), or by cutting off the output if the input
exceeds an adjustable overvoltage threshold. The
devices respond to output overload by actively limiting
the current or breaking the circuit. The output current
limit threshold as well as the transient overcurrent
blanking timer are user adjustable. The current limit
control pin also functions as an analog load current
monitor.
The devices are available in a 2-mm × 2-mm, 10pin HotRod™ QFN package for improved thermal
performance and reduced system footprint.
The devices are characterized for operation over a
junction temperature range of –40°C to +125°C.
Package Information
(1)
PART NUMBER
PACKAGE(1)
BODY SIZE (NOM)
TPS2597xxRPW
RPW (QFN, 10)
2.00 mm × 2.00 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
VIN = 2.7 to 23 V
IN
VOUT
OUT
VLOGIC
COUT
EN/UV LO
2 Applications
•
•
•
•
•
•
Server, PC motherboard, and add-in cards
Enterprise storage – RAID/HBA/SAN/eSSD
Patient monitors
Appliances and power tools
Retail point-of-sale terminals
Smartphones and tablets
TPS25 970x
OVL O
FLT
ITIMER
CITIMER
dVd t
GND
CDVD T
ILM
RILM
Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS2597
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SLVSGG5C – NOVEMBER 2021 – REVISED APRIL 2023
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................4
7 Specifications.................................................................. 5
7.1 Absolute Maximum Ratings........................................ 5
7.2 ESD Ratings............................................................... 5
7.3 Recommended Operating Conditions.........................5
7.4 Thermal Information....................................................6
7.5 Electrical Characteristics.............................................7
7.6 Timing Requirements.................................................. 8
7.7 Switching Characteristics............................................9
7.8 Typical Characteristics.............................................. 10
8 Detailed Description......................................................18
8.1 Overview................................................................... 18
8.2 Functional Block Diagram......................................... 19
8.3 Feature Description...................................................22
8.4 Device Functional Modes..........................................33
9 Application and Implementation.................................. 34
9.1 Application Information............................................. 34
9.2 Typical Application.................................................... 35
9.3 Parallel Operation..................................................... 38
9.4 Power Supply Recommendations.............................40
9.5 Layout....................................................................... 42
10 Device and Documentation Support..........................44
10.1 Device Support....................................................... 44
10.2 Documentation Support.......................................... 44
10.3 Receiving Notification of Documentation Updates..44
10.4 Support Resources................................................. 44
10.5 Trademarks............................................................. 44
10.6 Electrostatic Discharge Caution..............................44
10.7 Glossary..................................................................44
11 Mechanical, Packaging, and Orderable
Information.................................................................... 45
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (January 2022) to Revision C (April 2023)
Page
• Updated the UL/IEC certification status..............................................................................................................1
Changes from Revision A (December 2021) to Revision B (January 2022)
Page
• Added Thermal Information table to the document.............................................................................................5
Changes from Revision * (November 2021) to Revision A (December 2021)
Page
• Changed status from "Advance Information" to "Production Data".................................................................... 1
2
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5 Device Comparison Table
PART NUMBER
TPS25970ARPW
TPS25970LRPW
TPS25972ARPW
TPS25972LRPW
TPS25974ARPW
TPS25974LRPW
OVERVOLTAGE RESPONSE
OVERCURRENT
RESPONSE
Adjustable OVLO
PG
and PGTH
FLT
N
Y
Active Current Limit
Y
Circuit Breaker
Auto-Retry
Latch-Off
Auto-Retry
Pin Selectable OVC
(3.89 V/5.76 V/13.88 V)
Adjustable OVLO
RESPONSE TO
FAULT
N
Latch-Off
Auto-Retry
Latch-Off
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6 Pin Configuration and Functions
IN
OUT
EN/UV LO
1
10
OVL O/
OVCSE L
2
9
ILM
5
ITIMER
6
PG/
DNC
3
8
GND
PGTH/
FLT
4
7
DVDT
Figure 6-1. TPS2597xx RPW Package 10-Pin QFN (Top View)
Table 6-1. Pin Functions
PIN
NAME
NO.
EN/UVLO
1
TYPE
Analog Input
Active high enable for the device. A resistor divider on this pin from input supply to GND can be used
to adjust the undervoltage lockout threshold. Do not leave floating. Refer to Undervoltage Lockout
(UVLO and UVP) for details.
Analog Input
TPS25970x and TPS25974x: A resistor divider on this pin from supply to GND can be used to adjust
the overvoltage lockout threshold. This pin can also be used as an active low enable for the device. Do
not leave floating. Refer to Overvoltage Lockout (OVLO) for details.
OVCSEL
Analog Input
TPS25972x: Overvoltage clamp threshold select pin. Refer to Overvoltage Clamp (OVC) for details.
PG
Digital Output
TPS25972x and TPS25974x: Power-good indication. This is an open-drain signal, which is asserted
high when the internal powerpath is fully turned ON and the PGTH input exceeds a certain threshold.
Refer to Power Good Indication (PG) for more details.
DNC
Digital Output
TPS25970x: Can be left floating
FLT
Digital Output
TPS25970x: Active low fault event indicator. This pin is an open-drain signal that is pulled low when a
fault is detected. Refer to Fault Response and Indication (FLT) for more details.
Analog Input
TPS25972x and TPS25974x: Power-good threshold. Refer to Power Good Indication (PG) for more
details.
OVLO
2
3
4
PGTH
4
DESCRIPTION
IN
5
Power
Power input
OUT
6
Power
Power output
DVDT
7
Analog Output
GND
8
Ground
ILM
9
Analog Output
This pin is a dual function pin used to limit and monitor the output current. An external resistor from
this pin to GND sets the output current limit threshold during start-up as well as steady state. The pin
voltage can also be used as analog output load current monitor signal. Do not leave floating. Refer to
Circuit-Breaker or Active Current Limiting for more details.
ITIMER
10
Analog Output
A capacitor from this pin to GND sets the overcurrent blanking interval during which the output
current can temporarily exceed set current limit (but lower than fast-trip threshold) before the device
overcurrent response takes action. Leave this pin open for the fastest response to overcurrent events.
Refer to Circuit-Breaker or Active Current Limiting for more details.
A capacitor from this pin to GND sets the output turn on slew rate. Leave this pin floating for the fastest
turn on slew rate. Refer to Slew Rate (dVdt) and Inrush Current Control for details.
This pin is the ground reference for all internal circuits and must be connected to system GND.
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
Parameter
Pin
MIN
MAX
UNIT
VIN
Maximum input voltage range, –40 ℃ ≤ TJ ≤ 125 ℃
IN
–0.3
28
VOUT
Maximum output voltage range, –40 ℃ ≤ TJ ≤ 125 ℃
OUT
–0.3
VIN + 0.3
VOUT,PLS
Minimum output voltage pulse (< 1 µs)
OUT
–0.8
VEN/UVLO
Maximum Enable pin voltage range
EN/UVLO
–0.3
6.5
V
VOV
Maximum OVCSEL/OVLO pin voltage range
OVCSEL/OVLO
–0.3
6.5
V
VdVdT
Maximum dVdT pin voltage range
dVdt
Internally limited
VITIMER
Maximum ITIMER pin voltage range
ITIMER
Internally limited
VPGTH
Maximum PGTH pin voltage range
PGTH
–0.3
6.5
V
VPG
Maximum PG pin voltage range
PG
–0.3
6.5
V
VFLTB
Maximum FLT pin voltage range
FLT
–0.3
6.5
V
VILM
Maximum ILM pin voltage range
ILM
Internally limited
V
IMAX
Maximum continuous switch current
IN to OUT
Internally limited
A
TJ
Junction temperature
TLEAD
Maximum lead temperature
Tstg
Storage temperature
(1)
V
V
Internally limited
–65
V
°C
300
°C
150
°C
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001((1))
±2000
Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002((2))
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Parameter
Pin
MIN
MAX
UNIT
2.7
23(1)
V
OUT
VIN
V
EN/UVLO pin voltage range
EN/UVLO
5(2)
V
VOV
OVLO pin voltage range (TPS25970x and TPS25974x variants
only)
OVLO
1.5
V
VdVdT
dVdT pin capacitor voltage rating
dVdt
VPGTH
PGTH pin voltage range
PGTH
5
V
VFLTB
FLT pin voltage range
FLT
5
V
VPG
PG pin voltage range
PG
5
V
VITIMER
ITIMER pin capacitor voltage rating
ITIMER
RILM
ILM pin resistance to GND
ILM
715
6650
Ω
IMAX
Continuous switch current, TJ ≤ 125 ℃
IN to OUT
7
A
TJ
Junction temperature
–40
125
°C
VIN
Input voltage range
IN
VOUT
Output voltage range
VEN/UVLO
(1)
0.5
VIN + 5 V
V
4
V
For TPS25972x OVC variants, the input operating voltage must be limited to the selected Output Voltage Clamp Option as listed in the
Electrical Characteristics section.
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(2)
For supply voltages below 5 V, it is okay to pull up the EN pin to IN directly. For supply voltages greater than 5 V, TI recommends
to use a resistor divider with a minimum pullup resistor value of 350 kΩ.
7.4 Thermal Information
TPS2597xx
THERMAL METRIC
(1)
RPW (QFN)
UNIT
10 PINS
RθJA
Junction-to-ambient thermal resistance
RθJB
Junction-to-board thermal resistance
ΨJT
ΨJB
(1)
(2)
(3)
6
49.7((2))
°C/W
71.8((3))
°C/W
15.7
°C/W
Junction-to-top characterization parameter
2.1((2))
°C/W
Junction-to-top characterization parameter
1.3((3))
°C/W
23 ((2))
°C/W
Junction-to-board characterization parameter
14.5
((3))
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Based on simulations conducted with the device mounted on a custom 4-layer PCB (2s2p) with 8 thermal vias under device.
Based on simulations conducted with the device mounted on a JEDEC 4-layer PCB (2s2p) with no thermal vias under device.
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7.5 Electrical Characteristics
(Test conditions unless otherwise noted) –40°C ≤ TJ ≤ 125°C, VIN = 12 V, OUT = Open, VEN/UVLO = 2 V, VOVLO = 0 V
for TPS25970x/4x, OVCSEL = 390 kΩ to GND for TPS25972x, RILM = 715 Ω , dVdT = Open, ITIMER = Open, FLT = Open
for TPS25970x, PGTH = Open for TPS25972x/4x, PG = Open for TPS25972x/4x. All voltages referenced to GND.
Test
Parameter
Description
MIN
TYP
MAX
UNITS
IN supply quiescent current (TPS25970x)
413
650
µA
IN supply quiescent current (TPS25972x)
407
650
µA
IN supply quiescent current (TPS25974x)
413
650
µA
IN supply quiescent current during OVC (TPS25972x)
429
650
µA
INPUT SUPPLY (IN)
IQ(ON)
IQ(OFF)
IN supply OFF state current (VSD(F) < VEN < VUVLO(F))
67
131
µA
ISD
IN supply shutdown current (VEN < VSD(F))
2.3
25
µA
VUVP(R)
IN supply UVP rising threshold
2.44
2.54
2.64
V
VUVP(F)
IN supply UVP falling threshold
2.35
2.45
2.55
V
Overvoltage Clamp threshold, OVCSEL = Shorted to GND
3.65
3.89
4.1
V
Overvoltage Clamp threshold, OVCSEL = Open
5.25
5.76
6.2
V
Overvoltage Clamp threshold, OVCSEL = 390 kΩ to GND
13.2
13.88
14.5
V
Output voltage during clamping, OVCSEL = Shorted to GND,
IOUT = 10 mA
3.2
3.82
4.2
V
Output voltage during clamping, OVCSEL = Open, IOUT = 10
mA
5
5.68
6.12
V
Output voltage during clamping, OVCSEL = 390 kΩ to GND,
IOUT = 10 mA
13
13.79
14.6
V
98
105.5
114
µA/A
Overcurrent threshold, RILM = 6.65 KΩ
0.745
0.87
0.97
A
Overcurrent threshold, RILM = 3.32 KΩ
1.55
1.73
1.905
A
Overcurrent threshold, RILM = 1.65 KΩ
3.2
3.48
3.715
A
7.03
7.67
8.15
A
0.1
A
2
3.1
A
OUTPUT VOLTAGE CLAMP (OUT) - TPS25972x
VOVC
VCLAMP
OUTPUT LOAD CURRENT MONITOR (ILM)
GIMON
Analog load current monitor gain (IMON : IOUT), 1 A ≤ IOUT ≤
7.7 A, IOUT < ILIM
OVERCURRENT PROTECTION (OUT)
ILIM
Overcurrent threshold, RILM = 750 Ω
ISPFLT
Circuit-Breaker threshold, ILM pin open (Single point failure)
ISPFLT
Circuit-Breaker threshold, ILM pin shorted to GND (Single
point failure)
ISCGain
Scalable fast-trip threshold (ISC) : ILIM ratio
170
201
240
%
VFB
VOUT threshold to exit current limit foldback
1.55
1.88
2.23
V
2.7 ≤ VIN ≤ 4 V, IOUT = 3 A, TJ = 25℃
10
18.3
mΩ
4 < VIN ≤ 23 V, IOUT = 3 A, TJ = 25℃
9.8
18.3
mΩ
1.2
1.228
V
ON RESISTANCE (IN - OUT)
RON
ENABLE/UNDERVOLTAGE LOCKOUT (EN/UVLO)
VUVLO(R)
EN/UVLO rising threshold
1.183
VUVLO(F)
EN/UVLO falling threshold
1.076
1.1
1.12
V
VSD(F)
EN/UVLO falling threshold for lowest shutdown current
0.45
0.75
0.95
V
IENLKG
EN/UVLO pin leakage current
-0.1
0.1
µA
OVERVOLTAGE LOCKOUT (OVLO) - TPS25970x/4x
VOV(R)
OVLO rising threshold
1.183
1.2
1.228
V
VOV(F)
OVLO falling threshold
1.076
1.1
1.12
V
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7.5 Electrical Characteristics (continued)
(Test conditions unless otherwise noted) –40°C ≤ TJ ≤ 125°C, VIN = 12 V, OUT = Open, VEN/UVLO = 2 V, VOVLO = 0 V
for TPS25970x/4x, OVCSEL = 390 kΩ to GND for TPS25972x, RILM = 715 Ω , dVdT = Open, ITIMER = Open, FLT = Open
for TPS25970x, PGTH = Open for TPS25972x/4x, PG = Open for TPS25972x/4x. All voltages referenced to GND.
Test
Parameter
IOVLKG
Description
MIN
OVLO pin leakage current (0.5 V < VOVLO < 1.5 V)
TYP
MAX
-0.1
UNITS
0.1
µA
2.72
µA
OVERCURRENT FAULT TIMER (ITIMER)
IITIMER
ITIMER pin internal discharge current, IOUT > ILIM
RITIMER
ITIMER pin internal pullup resistance
VINT
ITIMER pin internal pullup voltage
VITIMER(F)
ΔVITIMER
1.5
2
13.8
35
kΩ
2.1
2.57
2.74
V
ITIMER comparator threshold, IOUT > ILIM
0.609
1.05
1.37
V
ITIMER discharge differential voltage threshold, IOUT > ILIM
1.286
1.52
1.741
V
PG pin voltage while de-asserted. VIN < VUVP(F), VEN <
VSD(F), Weak pull-up (IPG = 26 μA)
663
1000
mV
PG pin voltage while de-asserted. VIN < VUVP(F), VEN <
VSD(F), Strong pull-up (IPG = 242 μA)
782
1000
mV
0
600
mV
3
µA
V
POWER GOOD INDICATION (PG) - TPS25972x/4x
VPGD
PG pin voltage while de-asserted, VIN > VUVP(R)
IPGLKG
PG pin leakage current, PG asserted
POWERGOOD THRESHOLD (PGTH)
VPGTH(R)
PGTH rising threshold
1.178
1.2
1.23
VPGTH(F)
PGTH falling threshold
1.071
1.1
IPGTHLKG
PGTH pin leakage current
1.13
V
-1
1
µA
-1
1
µA
FAULT INDICATION (FLTB) - TPS25970x
IFLTLKG
FLT pin leakage current
RFLTB
FLT pin internal pull-down resistance
12.4
Ω
154
°C
10
°C
OVERTEMPERATURE PROTECTION (OTP)
TSD
Thermal Shutdown rising threshold, TJ↑
TSDHYS
Thermal Shutdown hysteresis, TJ↓
DVDT
IdVdt
dVdt pin internal charging current
1.4
3.4
5.7
µA
7.6 Timing Requirements
8
PARAMETER
TEST CONDITIONS
tOVLO
Overvoltage lockout response time
TPS25970x and TPS25974x, VOVLO > VOV(R)
to VOUT↓
MIN
tOVC
Overvoltage clamp response time
tCB
TYP MAX
UNIT
1.2
µs
TPS25972x, VIN > VOVC to VOUT↓
5
µs
Circuit-Breaker response time
TPS25974x, IOUT > ILIM + 30% to VOUT↓
2
µs
tLIM
Current limit response time
TPS25970x and TPS25972x, IOUT > ILIM +
30% to IOUT settling to within 5% of ILIM
465
µs
tSC
Short-circuit response time
IOUT > 3x ILIM to output current cut off
550
ns
tFT
Fixed fast-trip response time
IOUT > IFT to IOUT↓
550
ns
tTSD,RST
Thermal Shutdown auto-retry Interval
Device enabled and TJ < TSD - TSDHYS
110
ms
tPGA
PG assertion de-glitch time
VPGTH > VPGTH(R) to PG↑
14
µs
tPGD
PG de-assertion de-glitch time
VPGTH < VPGTH(F) to PG↓
14
µs
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7.7 Switching Characteristics
The output rising slew rate is internally controlled and constant across the entire operating voltage range to ensure the
turn on timing is not affected by the load conditions. The rising slew rate can be adjusted by adding capacitance from
the dVdt pin to ground. As CdVdt is increased it will slow the rising slew rate (SR). See Slew Rate and Inrush Current
Control (dVdt) section for more details. The Turn-Off Delay and Fall Time, however, are dependent on the RC time constant
of the load capacitance (COUT) and Load Resistance (RL). The Switching Characteristics are only valid for the power-up
sequence where the supply is available in steady state condition and the load voltage is completely discharged before the
device is enabled. Typical values are taken at TJ = 25°C unless specifically noted otherwise. RL = 100 Ω, COUT = 1 µF.
PARAMETER
SRON
tD,ON
tR
tON
tD,OFF
Output rising slew rate
Turn-on delay
Rise time
Turn-on time
Turn-off delay
VIN
CdVdt = Open
CdVdt = 1800 pF
CdVdt =
3300 pF
2.7 V
8.922
1.218
0.72
12 V
21.45
1.562
0.901
23 V
34.16
1.761
1.003
2.7 V
0.138
0.505
0.79
12 V
0.145
0.979
1.659
23 V
0.15
1.478
2.562
2.7 V
0.242
1.771
2.993
12 V
0.446
6.131
10.63
23 V
0.538
10.43
18.31
2.7 V
0.379
2.277
3.783
12 V
0.582
7.11
12.29
23 V
0.668
11.91
20.87
2.7 V
22.1
22.1
22.1
12 V
18.9
18.9
18.9
23 V
16.5
16.5
16.5
UNITS
V/ms
ms
ms
ms
µs
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14.5
14 VIN (V)
2.7
13.5
3.3
13
4
12.5
5
12
12
23
11.5
11
10.5
10
9.5
9
8.5
8
7.5
-40
-20
500
480
460
440
IQ(ON) (A)
RON (m)
7.8 Typical Characteristics
420
400
380
360
TA (C)
-40
25
85
125
340
320
0
20
40
60
TA (C)
80
100
120
300
2.5
140
Figure 7-1. ON-Resistance vs Supply Voltage
5
7.5
10
12.5
15
VIN (V)
17.5
20
22.5
25
Figure 7-2. IN Quiescent Current vs Temperature (TPS25970x,
TPS25974x Variants)
500
100
90
80
IQ(OFF) (A)
IQ(ON) (A)
450
400
TA (C)
-40
25
85
125
350
60
50
TA (C)
-40
25
85
125
40
30
20
300
3
4
5
6
7
8
VIN (V)
9
10
11
2
12
Figure 7-3. IN Quiescent Current vs Temperature (TPS25972x
Variant)
4
6
8
10
12
14
VIN (V)
16
18
20
22
24
Figure 7-4. IN OFF State (UVLO) Current vs Temperature
8
2.55
TA (C)
-40
25
85
125
2.5
VUVP (V)
6
ISD (A)
70
4
Rising
Falling
2.45
2
0
2
4
6
8
10
12
14
VIN (V)
16
18
20
22
Figure 7-5. IN Shutdown Current vs Temperature
10
24
2.4
-40
-20
0
20
40
60
TA (C)
80
100
120
140
Figure 7-6. IN Undervoltage Threshold vs Temperature
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7.8 Typical Characteristics (continued)
1.208
1.207
VUVLO(R) (V)
1.2065
1.1005
VIN (V)
2.7
5
12
23
1.0995
1.099
1.206
1.2055
1.205
1.2045
1.0985
1.098
1.0975
1.097
1.0965
1.204
1.096
1.2035
1.0955
1.203
-40
VIN (V)
2.7
5
12
23
1.1
VUVLO(F) (V)
1.2075
-20
0
20
40
60
TA (C)
80
100
120
1.095
-40
140
Figure 7-7. EN/UVLO Rising Threshold vs Temperature
-20
0
20
40
60
TA (C)
80
100
120
140
Figure 7-8. EN/UVLO Falling Threshold vs Temperature
1.21
1.209
1.208
VOV(R) (V)
1.207
VIN (V)
2.7
5
12
23
1.206
1.205
1.204
1.203
1.202
1.201
1.2
-40
1.1005
1.0995
VIN (V)
2.7
5
12
23
1.0985
ILIM (mA)
VOV(F) (V)
1.099
1.098
1.0975
1.097
1.0965
1.096
1.0955
1.095
-40
-20
0
20
40
60
TA (C)
80
100
120
Figure 7-11. OVLO Falling Threshold vs Temperature
(TPS25970x, TPS25974x Variants)
0
20
40
60
TA (C)
80
100
120
140
Figure 7-10. OVLO Rising Threshold vs Temperature
(TPS25970x, TPS25974x Variants)
Figure 7-9. EN/UVLO Shutdown Falling Threshold vs
Temperature
1.1
-20
140
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0.5
1
1.5
2
2.5
3
3.5 4 4.5
RILM (k)
5
5.5
6
6.5
7
Figure 7-12. Overcurrent Threshold vs ILM Resistor
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16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
0.5
10
Min
Max
6
0
-2
-4
-8
1.5
2.5
3.5
4.5
ILIM (A)
5.5
6.5
1
7.5
1.5
2
2.5
3
3.5
4 4.5 5
IOUT (A)
5.5
6
6.5
7
7.5
8
Figure 7-14. Analog Current Monitor Gain Accuracy
14
13
201.85
OVCSEL
Shorted to GND
OPEN
390 k to GND
12
201.75
11
201.65
10
VOVC (V)
ISFT/ILIM Ratio (%)
2
-10
201.95
201.55
201.45
201.35
201.25
-20
0
20
40
60
TA (C)
80
100
9
8
VIN (V)
2.7
5
12
23
7
120
3
-40
6
5
4
140
Figure 7-15. Scalable Fast-Trip Threshold: Current Limit
Threshold (ILIM) Ratio vs Temperature
-20
0
20
40
60
TA (C)
80
100
120
140
Figure 7-16. OVC Threshold vs Temperature (TPS25972x
Variant)
5.88
14
5.85
13.95
13.85
13.8
5.82
IOUT (mA)
1
10
100
5.79
VCLAMP (V)
IOUT (mA)
1
10
100
13.9
VCLAMP (V)
4
-6
Figure 7-13. Overcurrent Threshold Accuracy (Across Process,
Voltage and Temperature)
201.15
-40
Min
Max
8
GIMON Error (%)
ILIM Error (%)
7.8 Typical Characteristics (continued)
5.76
5.73
5.7
5.67
13.75
5.64
13.7
5.61
5.58
13.65
-40
-20
0
20
40
60
TA (C)
80
100
120
140
Figure 7-17. OVC Clamping Voltage (OVCSEL = 390 kΩ to GND)
vs Load Current (TPS25972x Variant)
12
5.55
-40
-20
0
20
40
60
TA (C)
80
100
120
140
Figure 7-18. OVC Clamping Voltage (OVCSEL = OPEN) vs Load
Current (TPS25972x Variant)
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7.8 Typical Characteristics (continued)
4.02
1.53
3.99
1.528
IOUT (mA)
1
10
100
VCLAMP (V)
3.93
3.9
3.87
3.84
3.81
1.526
1.524
VITIMER (V)
3.96
1.522
1.52
1.518
1.516
3.78
1.514
3.75
1.512
3.72
3.69
-40
VIN (V)
2.7
5
12
23
-20
0
20
40
60
TA (C)
80
100
120
1.51
-40
140
Figure 7-19. OVC Clamping Voltage (OVCSEL = GND) vs Load
Current (TPS25972x Variant)
-20
0
20
40
60
TA (C)
80
100
120
140
Figure 7-20. ITIMER Discharge Differential Voltage Threshold vs
Temperature
18.5
18
17.5
RITIMER (k)
17
VIN (V)
2.7
5
12
23
16.5
16
15.5
15
14.5
14
13.5
13
-40
2.8
4
2.7
3.8
2.6
3.6
2.5
2.4
VIN (V)
2.7
5
12
23
2.3
2.2
-40
-20
0
20
40
60
TA (C)
80
100
120
140
Figure 7-23. ITIMER internal Pullup Voltage vs Temperature
0
20
40
60
TA (C)
80
100
120
140
Figure 7-22. ITIMER Internal Pullup Resistance vs Temperature
IDVDT (A)
VINT (V)
Figure 7-21. ITIMER Discharge Current vs Temperature
-20
VIN (V)
2.7
5
12
23
3.4
3.2
3
2.8
-40
-20
0
20
40
60
TA (C)
80
100
120
140
Figure 7-24. DVDT Charging Current vs Temperature
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7.8 Typical Characteristics (continued)
1.206
1.1005
VIN (V)
2.7
5
12
23
1.2055
1.0995
1.099
1.2045
VPGTH(F) (V)
VPGTH(R) (V)
1.205
1.204
1.2035
1.097
1.0955
1.202
-40
-20
0
20
40
60
TA (C)
80
100
120
1.095
-40
140
-20
0
20
40
60
TA (C)
80
100
120
140
Figure 7-25. PGTH Threshold (Rising) vs Temperature
(TPS25972x, TPS25974x Variants)
Figure 7-26. PGTH Threshold (Falling) vs Temperature
(TPS25972x, TPS25974x Variants)
19
10000
5000
VIN (V)
2.7
12
23
18
17
2000
1000
500
Time to TSD (ms)
16
RFLTB ()
1.098
1.0975
1.096
1.2025
15
14
13
12
200
100
50
20
10
5
2
1
0.5
11
10
9
-40
0.2
0.1
-20
0
20
40
60
TA (C)
80
100
120
140
Figure 7-27. FLT Pin Pulldown Resistance vs Temperature
1000
500
Time to TSD (ms)
1.0985
1.0965
1.203
0
20
40
60
80
PD (W)
100
120
140
Figure 7-28. Time to Thermal Shut-Down During Inrush State
TA (C)
-40
25
85
125
200
100
50
20
10
5
2
1
0.5
0.2
0.1
1
2
3
4
5 6 7 8 10
PD (W)
20
30 40 50 60
Figure 7-29. Time to Thermal Shut-Down During Steady State
14
VIN (V)
2.7
5
12
23
1.1
VIN = 12 V, COUT = 22 μF, CdVdt = Open, VEN/UVLO ramped
from 0 V → 1.4 V → 0 V
Figure 7-30. Power Up and Down With EN/UVLO Control
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7.8 Typical Characteristics (continued)
VEN/UVLO = 2 V, COUT = 22 μF, CdVdt = Open, VIN ramped from
0 V → 12 V → 0 V
COUT = 22 μF, CdVdt = Open, EN/UVLO connected to IN
through resistor ladder, 12 V hot-plugged to IN
Figure 7-31. Power Up and Down With Input Supply
VIN = 12 V, COUT = 470 μF, CdVdt = Open, VEN/UVLO stepped
up to 3.3 V
Figure 7-33. Inrush Current Without Slew Rate Control –
Capacitive Load
VIN = 12 V, COUT = 470 μF, ROUT = 10 Ω, CdVdt = 5100 pF,
VEN/UVLO stepped up to 3.3 V
Figure 7-35. Inrush Current With Slew Rate Control – Resistive
and Capacitive Load
Figure 7-32. Input Hot-Plug
VIN = 12 V, COUT = 470 μF, CdVdt = 5100 pF, VEN/UVLO stepped
up to 3.3 V
Figure 7-34. Inrush Current With Slew Rate Control – Capacitive
Load
OV threshold set to 16.7 V, VIN ramped up from 12 V to 17 V
Figure 7-36. Overvoltage Lockout Response – TPS25970x and
TPS25974x
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7.8 Typical Characteristics (continued)
ROVCSEL = GND, COUT = 220 μF, IOUT = 200 mA, VIN ramped
up from 3.3 V to 5.8 V
Figure 7-37. Overvoltage Clamp Response – TPS25972x
ROVCSEL = 390 kΩ, COUT = 220 μF, IOUT = 200 mA, VIN
ramped up from 12 V to 16.5 V
Figure 7-38. Overvoltage Clamp Response – TPS25972x
VIN = 12 V, CITIMER = 1.3 nF, COUT = 220 μF, RILM = 715 Ω,
IOUT stepped from 0 A → 11 A
Figure 7-39. Overvoltage Clamp Response – TPS25972x
Figure 7-40. Active Current Limit Response – TPS25970x
VIN = 12 V, CITIMER = 1.3 nF, COUT = 220 μF, RILM = 715 Ω,
IOUT stepped from 0 A → 11 A
VIN = 12 V, CITIMER = 120 pF, COUT = 470 μF, RILM = 715 Ω,
IOUT ramped from 0 A → 8 A→ 4 A within 100 μs
Figure 7-41. Active Current Limit Response Followed by TSD –
TPS25970x
16
ROVCSEL = Open, COUT = 220 μF, IOUT = 200 mA, VIN ramped
up from 5 V to 7.5 V
Figure 7-42. Transient Overcurrent Blanking Timer Response
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7.8 Typical Characteristics (continued)
VIN = 12 V, CITIMER = 1.3 nF, COUT = 470 μF, RILM = 715 Ω,
IOUT stepped from 0 A → 11 A
Figure 7-43. Circuit-Breaker Response TPS25974x
VIN = 12 V, RILM = 715 Ω, OUT stepped from Open → Shortcircuit to GND
Figure 7-45. Output Short-Circuit During Steady State (Zoomed
In)
VIN = 12 V, RILM = 715 Ω, OUT stepped from Open → Shortcircuit to GND
Figure 7-44. Output Short-Circuit During Steady State
VIN = 12 V, COUT = Open, OUT short-circuit to GND, RILM =
715 Ω, VEN/UVLO stepped from 0 V to 3.3 V
Figure 7-46. Power Up into Short-Circuit
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8 Detailed Description
8.1 Overview
The TPS2597xx is an eFuse with an integrated power path that is used to ensure safe power delivery in a
system. The device starts its operation by monitoring the IN bus. When the input supply voltage (VIN) exceeds
the undervoltage protection threshold (VUVP), the device samples the EN/UVLO pin. A high level (> VUVLO) on
this pin enables the internal power path (HFET) to start conducting and allow current to flow from IN to OUT.
When EN/UVLO is held low (< VUVLO), the internal power path is turned off.
After a successful start-up sequence, the device now actively monitors its load current and input voltage, and
controls the internal HFET to ensure that the user adjustable overcurrent limit threshold (ILIM) is not exceeded
and overvoltage spikes are either safely clamped to the selected threshold voltage (VOVC) or cut-off after they
cross the user-adjustable overvoltage lockout threshold (VOVLO). The device also provides fast protection against
severe overcurrent during short-circuit events. This feature keeps the system safe from harmful levels of voltage
and current. At the same time, a user-adjustable overcurrent blanking timer allows the system to pass moderate
transient peaks in the load current profile without tripping the eFuse. This action ensures a robust protection
solution against real faults which is also immune to transients, thereby ensuring maximum system uptime.
The device also has a built-in thermal sensor based shutdown mechanism to protect itself in case the device
temperature (TJ) exceeds the recommended operating conditions.
18
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8.2 Functional Block Diagram
FFT
TPS25 970x
-
+
354 mV
Temp S ense and
Overtemperature
protection
IN
TSD
6
OUT
7
DVDT
9
ILM
10
ITIMER
8
GND
5
INRUSH_DONE
HFE T
CP
2.8 V
+
2.45 V;
UVPb
GHI
-
2.54 V9
-
+
A
FFT
A/A
GHI
-
2
1.2 V9
HFE T Control
1.1 V;
1.2 V9
1x
+
SD
INRUSH_DONE
SWEN
ITIMER_EXPIRED
1.1 V;
+
0.75 V;
-
OC
UVLOb
-
1
2x
+
Curren t Limit Amplifier
+
EN/UV LO
-
SC
OVL Ob
+
OVL O
Sho rt
Detect
ILM Pin Sh ort
RETRY #
TSD
1.05 V; 2.57 V
R
S
/Q
Q
110 ms
TIMER #
13.8 kŸ
SD
UVPb
RETRY #
+
ITIMER_EXPIRED
FLT
-
ILM Pin Sh ort
OC
ITIMER_EXPIRED
A
4
3
FLT
DNC
# Not appl icab le to Latch-off variants (TPS 25970L )
Figure 8-1. TPS25970x Block Diagram
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FFT
TPS25 972x
-
+
354 mV
Temp S ense and
Overtemperature
protection
IN
TSD
5
6
OUT
7
DVDT
INRUSH_DONE
HFE T
CP
+
-
2.45 V;
A
UVPb
GHI
+
OVC
GHI
OVC Threshold
Sele ct
2
A/A
FFT
OVCSE L
-
+
2.54 V9
2.8 V
-
SC
HFE T Control
+
Curren t Limit Amplifier
+
1
1.2 V9
1x
+
SWEN
SD
INRUSH_DONE
ITIMER_EXPIRED
1.1 V;
+
0.75 V;
-
OC
UVLOb
9
ILM
10
ITIMER
8
GND
-
EN/UV LO
2x
Sho rt
Detect
ILM Pin Sh ort
1.05 V; 2.57 V
PG_ int
SD
UVPb
RETRY #
R
+
ITIMER_EXPIRED
/Q
-
PG_ int
TSD
S
Q
13.8 kŸ
OVC
INRUSH_DONE
FLT
SD
OC
PG_ int
UVPb
ILM Pin Sh ort
A
R
S
Q
/Q
+
110 ms
TIMER #
-
RETRY #
1.2 V9
1.1 V;
3
4
PG
PGTH
# Not appl icab le to Latch-off variants (TPS 25972L )
Figure 8-2. TPS25972x Block Diagram
20
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FFT
TPS25 974x
-
+
354 mV
Temp S ense and
Overtemperature
protection
IN
TSD
6
OUT
7
DVDT
9
ILM
10
ITIMER
8
GND
5
INRUSH_DONE
HFE T
CP
2.8 V
+
2.45 V;
UVPb
GHI
-
2.54 V9
-
+
A
A/A
FFT
GHI
-
OVL O
2
1.2 V9
-
SC
OVL Ob
HFE T Control
+
+
1.1 V;
Curren t Limit Amplifier
+
1
1.2 V9
-
OC
UVLOb
1x
+
-
EN/UV LO
2x
1.1 V;
SWEN
Sho rt
Detect
INRUSH_DONE
SD
-
ILM Pin Sh ort
+
0.75 V;
PG_ int
1.05 V; 2.57 V
INRUSH_DONE
TSD
ILM Pin Sh ort
13.8 kŸ
SD
UVPb
RETRY #
+
R
/Q
ITIMER_EXPIRED
OVL Ob
PG_ int
S
Q
FLT
-
SD
PG_ int
UVPb
ITIMER_EXPIRED
OC
A
R
S
Q
/Q
+
110 ms
TIMER #
-
RETRY #
1.2 V9
1.1 V;
3
4
PGTH
# Not appl icab le to Latch-off variants (TPS 25974L )
Figure 8-3. TPS25974x Block Diagram
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8.3 Feature Description
The TPS2597xx eFuse is a compact, feature-rich power management device that provides detection, protection,
and indication in the event of system faults.
8.3.1 Undervoltage Lockout (UVLO and UVP)
The TPS2597xx implements undervoltage protection on IN in case the applied voltage becomes too low for the
system or device to properly operate. The undervoltage protection has a default lockout threshold of VUVP which
is fixed internally. Also, the UVLO comparator on the EN/UVLO pin allows the undervoltage protection threshold
to be externally adjusted to a user-defined value. Figure 8-4 and Equation 1 show how a resistor divider can be
used to set the UVLO set point for a given voltage supply.
Power
Supply
IN
R1
EN/UVLO
R2
GND
Figure 8-4. Adjustable Undervoltage Protection
VIN(UV) =
VUVLO × (R1 + R2)
R2
(1)
8.3.2 Overvoltage Lockout (OVLO)
The TPS25970x and TPS25974x variants allow the user to implement overvoltage lockout to protect the load
from input overvoltage conditions. The OVLO comparator on the OVLO pin allows the overvoltage protection
threshold to be adjusted to a user-defined value. After the voltage at the OVLO pin crosses the OVLO rising
threshold, VOV(R), the device turns off the power to the output. Thereafter, the devices wait for the voltage at the
OVLO pin to fall below the OVLO falling threshold, VOV(F) before the output power is turned ON again. The rising
and falling thresholds are slightly different to provide hysteresis. Figure 8-5 and Equation 2 show how a resistor
divider can be used to set the OVLO set point for a given voltage supply.
Power
Supply
IN
R1
OVLO
R2
GND
Figure 8-5. Adjustable Overvoltage Protection
VIN(OV) =
VOV × (R1 + R2)
R2
(2)
While recovering from a OVLO event, the TPS25970x variants start up with inrush control (dVdt).
22
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Input O ver vol tage Even t
Input O ver vol tage Removed
IN
0
OVLO
VOV(R)
VOV(F)
tOVLO
0
OUT
dVd t Limite d S tar t-up
0
VFLT
FLT
0
Tim e
Figure 8-6. TPS25970x Overvoltage Lockout and Recovery
While recovering from an OVLO event, the TPS25974x variants start up with inrush control (dVdt).
Input O ver vol tage Even t
Input O ver vol tage Removed
IN
0
OVLO
VOV(R)
VOV(F)
tOVLO
0
OUT
dVd t Limite d S tar t-up
0
tPGA
tPGD
VPG
PG
0
Tim e
Figure 8-7. TPS25974x Overvoltage Lockout and Recovery
8.3.3 Overvoltage Clamp (OVC)
The TPS25972x variants implement a voltage clamp on the output to protect the system in the event of input
overvoltage. When the device detects the input has exceeded the overvoltage clamp threshold (VOVC), it quickly
responds within tOVC and stops the output from rising further. the device then regulates the HFET linearly to
clamp the output voltage below VCLAMP as long as an overvoltage condition is present on the input.
If the part stays in clamping state for an extended period of time, there is higher power dissipation inside the
part which can eventually lead to thermal shutdown (TSD). After the part shuts down due to TSD fault, it either
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stays latched off (TPS25972L variant) or restart automatically after a fixed delay (TPS25972A variant). See
Overtemperature Protection (OTP) for more details on device response to overtemperature.
Input O ver vol tage Even t
IN
Input O ver vol tage Removed
VOVC
Thermal
Shu tdo wn
Retry Time r E xpir ed
(1)
0
tOVC
tRST
VCL AMP
OUT
dVd t Limite d S tar t-up
0
tPGA
tPGD
VPG
PG
0
TSD
TSDHYS
TJ
Tim e
(1)
App lica ble only for TPS259 72A (Auto-retry varian t)
Figure 8-8. TPS25972x Overvoltage Response (Auto-Retry)
There are three available overvoltage clamp threshold options, which can be configured using the OVCSEL pin.
Table 8-1. TPS25972x Overvoltage Clamp Threshold Selection
OVCSEL PIN CONNECTION
OVERVOLTAGE CLAMP THRESHOLD
Shorted to GND
3.89 V
Open
5.76 V
Connected to GND through a 390-kΩ resistor
13.88 V
8.3.4 Inrush Current, Overcurrent, and Short Circuit Protection
TPS2597xx incorporates four levels of protection against overcurrent:
1.
2.
3.
4.
Adjustable slew rate (dVdt) for inrush current control
Adjustable threshold (ILIM) for overcurrent protection during start-up or steady-state
Adjustable threshold (ISC) for fast-trip response to severe overcurrent during start-up or steady-state
Fixed threshold (IFT) for fast-trip response to quickly protect against hard output short-circuits during steadystate
8.3.4.1 Slew Rate (dVdt) and Inrush Current Control
During hot-plug events or while trying to charge a large output capacitance at start-up, there can be a large
inrush current. If the inrush current is not managed properly, it can damage the input connectors or cause
the system power supply to droop leading to unexpected restarts elsewhere in the system or both. The inrush
current during turn on is directly proportional to the load capacitance and rising slew rate. Use Equation 3 to find
the slew rate (SR) required to limit the inrush current (IINRUSH) for a given load capacitance (COUT):
SR (V/ms) =
IINRUSH mA
COUT µF
(3)
A capacitor can be connected to the dVdt pin to control the rising slew rate and lower the inrush current during
turn on. Use Equation 4 to calulate the required CdVdt capacitance to produce a given slew rate.
24
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CdVdt pF =
3300
SR V/ms
(4)
The fastest output slew rate is achieved by leaving the dVdt pin open.
Note
For CdVdt > 10 nF, TI recommends to add a 100-Ω resistor in series with the capacitor on the dVdt pin.
8.3.4.2 Circuit-Breaker
The circuit-breaker variants (TPS25974x) respond to output overcurrent conditions by turning off the output after
a user-adjustable transient fault blanking interval. When the load current exceeds the set overcurrent threshold
(ILIM) set by the ILM pin resistor (RILM), but stays lower than the fast-trip threshold (2 × ILIM), the device starts
discharging the ITIMER pin capacitor using an internal 2-μA pulldown current. If the load current drops below
ILIM before the ITIMER pin capacitor (CITIMER) discharges by ΔVITIMER, the ITIMER is reset by pulling it up to
VINT internally and the circuit breaker action is not engaged. This action allows short load transient pulses to
pass through the device without tripping the circuit. If the overcurrent condition persists, the CITIMER continues to
discharge and after it discharges by ΔVITIMER, the circuit breaker action turns off the HFET immediately. At the
same time, the CITIMER is charged up to VINT again so that it is at its default state before the next overcurrent
event. This action ensures the full blanking timer interval is provided for every overcurrent event. Use Equation 5
to calculate the RILM value for an overcurrent threshold.
RILM Ω =
5747
ILIM A
(5)
Note
1. Leaving the ILM pin Open sets the current limit to nearly zero and results in the part breaking the
circuit with the slightest amount of loading at the output.
2. Shorting the ILM pin to ground at any point during normal operation is detected as a fault and the
part shuts down. There is a minimum current (IFLT) which the part allows in this condition before
the pin short condition is detected.
The duration for which transients are allowed can be adjusted using an appropriate capacitor value from ITIMER
pin to ground. Use Equation 6 to calculate the CITIMER value needed to set the desired transient overcurrent
blanking interval.
tITIMER (ms) =
∆ VITIMER (V) × CITIMER (nF)
IITIMER (µA)
(6)
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Transient O ve rcu rrent
Per sistent Ou tpu t Overload
ITIMER expire d
2 x ILIM
Circuit-Bre ake r
ope rati on
IOUT
ILIM
0
tITIMER
VINT
¨VITIMER
ITIMER
0
VIN
OUT
0
VPGTH
PGTH
0
tPGD
VPG
PG
0
TSD
TSDHYS
TJ
TJ
Tim e
Figure 8-9. TPS25974x Overcurrent Response
Note
1. Leave the ITIMER pin open to allow the part to break the circuit with the minimum possible delay.
2. Shorting the ITIMER pin to ground results in minimum overcurrent response delay (similar to
ITIMER pin open condition), but increases the device current consumption. This action is not a
recommended mode of operation.
3. Increasing the ITIMER cap value extends the overcurrent blanking interval, but it also extends
the time needed for the ITIMER cap to recharge up to VINT. If the next overcurrent event occurs
before the ITIMER cap is recharged fully, it takes less time to discharge to the ITIMER expiry
threshold, thereby providing a shorter blanking interval than intended.
After the part shuts down due to a circuit-breaker fault, it either stays latched off (TPS25974L variant) or restart
automatically after a fixed delay (TPS25974A variant).
8.3.4.3 Active Current Limiting
The active current limit variants (TPS25970x and TPS25972x) respond to output overcurrent conditions by
actively limiting the current after a user adjustable transient fault blanking interval. When the load current
exceeds the set overcurrent threshold (ILIM) set by the ILM pin resistor (RILM), but stays lower than the
short-circuit threshold (2 × ILIM), the device starts discharging the ITIMER pin capacitor using an internal 2-μA
pulldown current. If the load current drops below the overcurrent threshold before the ITIMER capacitor (CITIMER)
discharges by ΔVITIMER, the ITIMER is reset by pulling it up to VINT internally and the current limit action is not
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engaged. This event allows short load transient pulses to pass through the device without getting current limited.
If the overcurrent condition persists, the CITIMER continues to discharge and after it discharges by ΔVITIMER, the
current limit starts regulating the HFET to actively limit the current to the set overcurrent threshold (ILIM). At the
same time, the CITIMER is charged up to VINT again so that it is at its default state before the next overcurrent
event. This event ensures the full blanking timer interval is provided for every overcurrent event. Use Equation 7
to calculate the RILM value for a desired overcurrent threshold.
RILM Ω =
5747
ILIM A
(7)
Note
1. Leaving the ILM pin open sets the current limit to nearly zero and results in the part entering
current limit with the slightest amount of loading at the output.
2. The current limit circuit employs a foldback mechanism. The current limit threshold in the foldback
region (0 V < VOUT < VFB) is lower than the steady state current limit threshold (ILIM).
3. Shorting the ILM pin to ground at any point during normal operation is detected as a fault and the
part shuts down. There’s a minimum current (IFLT) which the part allows in this condition before
the pin short condition is detected.
The duration for which transients are allowed can be adjusted using an appropriate capacitor value from ITIMER
pin to ground. Use Equation 8 to calculate the CITIMER value needed to set the desired transient overcurrent
blanking interval.
tITIMER (ms) =
∆ VITIMER (V) × CITIMER (nF)
IITIMER (µA)
(8)
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Transient O ve rcu rrent
Per sistent Ou tpu t Overload
ITIMER expire d
Overloa d Removed
Per sistent Ou tpu t Overload
ITIMER expire d
Thermal sh utd own
2 x ILIM
IOUT
tLIM
tLIM
Curren t limitin g
ope rati on
Curren t limitin g
ope rati on
ILIM
0
tITIMER
tITIMER
VINT
¨VITIMER
ITIMER
0
VIN
OUT
0
1.2 V
PGTH (1)
tPGD
0
tPGA
tPGD
VPG
PG (1)
0
VFLT
FLT (2)
0
TSD
TSDHYS
TJ
TJ
Tim e
(1)
(2)
App lica ble only to TP S2597 2x and TPS2 5974x va riants
App lica ble only to TP S2597 0x varian ts
Figure 8-10. TPS25970x and TPS25972x Active Current Limit Response
Note
1. Leave the ITIMER pin open to allow the part to limit the current with the minimum possible delay.
2. Shorting the ITIMER pin to ground results in minimum overcurrent response delay (similar to
ITIMER pin open condition), but increases the device current consumption. This action is not a
recommended mode of operation.
3. Active current limiting based on RILM is active during start-up for TPS25970x, TPS25972x (active
current limit) as well as TPS25974x (circuit-breaker) variants. In case the start-up current exceeds
ILIM, the device regulates the current to the set limit. However, during start-up the current limit is
engaged without waiting for the ITIMER delay.
4. For the TPS25972x variants, during overvoltage clamp condition, if an overcurrent event occurs,
the current limit is engaged without waiting for the ITIMER delay.
5. Increasing the CITIMER value extends the overcurrent blanking interval, but it also extends the time
needed for the CITIMER to recharge up to VINT. If the next overcurrent event occurs before the
CITIMER is recharged fully, it takes lesser time to discharge to the ITIMER expiry threshold, thereby
providing a shorter blanking interval than intended.
During active current limit, the output voltage drops, resulting in increased device power dissipation across the
HFET. If the device internal temperature (TJ) exceeds the thermal shutdown threshold (TSD), the HFET is turned
off. After the part shuts down due to TSD fault, it either stays latched off (TPS2597xL variants) or restarts
automatically after a fixed delay (TPS2597xA variants). See Overtemperature Protection (OTP) for more details
on device response to overtemperature.
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8.3.4.4 Short-Circuit Protection
During an output short-circuit event, the current through the device increases very rapidly. When a severe
overcurrent condition is detected, the device triggers a fast-trip response to limit the current to a safe level. The
internal fast-trip comparator employs a scalable threshold (ISC) which is equal to 2 × ILIM. This action enables
the user to adjust the fast-trip threshold rather than using a fixed threshold which can be too high for some low
current systems. The device also employs a fixed fast-trip threshold (IFT) to protect fast protection against hard
short-circuits during steady state. The fixed fast-trip threshold is higher than the maximum recommended user
adjustable scalable fast-trip threshold. After the current exceeds ISC or IFT, the HFET is turned off completely
within tFT. Thereafter, the devices tries to turn the HFET back on after a short de-glitch interval (30 μs) in a
current limited manner instead of a dVdt limited manner. This action ensures that the HFET has a faster recovery
after a transient overcurrent event and minimizes the output voltage droop. However, if the fault is persistent, the
device stays in current limit causing the junction temperature to rise and eventually enter thermal shutdown. For
details on the device response to overtemperature, see Overtemperature Protection (OTP).
Transient S evere Overcurrent
Per sistent Se vere O vercurr ent
Output Ha rd S hort-circuit to g round
Thermal Shutdown
Thermal Shutdown
Overcurren t Remove d
Retry Time r E lapsed
Sho rt-circuit Removed
(3)
Retry Time r E lapsed
(3)
VIN
IN
0
IFT
tSC
tFT
tSC
2 x ILIM
IOUT
ILIM
0
VIN
OUT
Curren t Limite d
Start-up
0
dVd t Limite d
Start-up
dVd t Limite d
Start-up
tPGD
tPGD
tPGD
VPG
PG
tPGA
tPGA
tPGA
(1)
0
VFLT
FLT
(2)
0
tRST
TSD
tRST
TSDHYS
TJ
Tim e
(1)
(2)
(3)
App lica ble only to TP S2597 2x and TPS2 5974x va riants
App lica ble only to TP S2597 0x varian ts
App lica ble only to TP S2597 xA varian ts
Figure 8-11. TPS2597xx Short-Circuit Response
8.3.5 Analog Load Current Monitor
The device allows the system to accurately monitor the output load current by providing an analog current sense
output on the ILM pin, which is proportional to the current through the FET. The user can sense the voltage
(VILM) across the RILM to get a measure of the output load current.
VILM (µV)
IOUT (A) = RILM (Ω) × GIMON (µA/A)
(9)
The waveform below shows the ILM signal response to a load step at the output.
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VIN = 12 V, RILM = 715 Ω, IOUT varied dynamically between 0 A and 5.5 A
Figure 8-12. Analog Load Current Monitor Response
Note
The ILM pin is sensitive to capacitive loading. Careful design and layout is needed to ensure the
parasitic capacitive loading on the ILM pin is < 50 pF for stable operation.
8.3.6 Overtemperature Protection (OTP)
The device monitors the internal die temperature (TJ) at all times and shuts down the part as soon as the
temperature exceeds a safe operating level (TSD), thereby protecting the device from damage. The device does
not turn back on until the junction cools down sufficiently, that is the die temperature falls below (TSD – TSDHYS).
When the TPS2597xL (latch-off variant) detects thermal overload, it shuts down and remains latched-off until
the device is power cycled or re-enabled. When the TPS2597xA (auto-retry variant) detects thermal overload, it
remains off until it has cooled down by TSDHYS. Thereafter, the device remains off for an additional delay of tRST
after which it automatically retries to turn on if it is still enabled.
Table 8-2. Thermal Shutdown
DEVICE
ENTER TSD
TPS2597xL (Latch-Off)
TPS2597xA (Auto-Retry)
EXIT TSD
TJ ≥ TSD
TJ < TSD – TSDHYS
VIN cycled to 0 V and then above VUVP(R) OR
EN/UVLO toggled below VSD(F)
TJ ≥ TSD
TJ < TSD – TSDHYS
VIN cycled to 0 V and then above VUVP(R) or
EN/UVLO toggled below VSD(F) or tRST timer
expired
8.3.7 Fault Response and Indication (FLT)
Table 8-3 summarizes the device response to various fault conditions. Additionally, an active low external fault
indication (FLT) pin is available on the TPS25970x variants.
Table 8-3. Fault Summary
EVENT
PROTECTION
RESPONSE
FAULT LATCHED
INTERNALLY
FLT PIN STATUS (1)
Overtemperature
Shutdown
Y
L
Undervoltage (UVP or
UVLO)
Shutdown
N
H
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DELAY(1)
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Table 8-3. Fault Summary (continued)
PROTECTION
RESPONSE
FAULT LATCHED
INTERNALLY
FLT PIN STATUS (1)
Shutdown(1) (2)
N
H
Voltage Clamp(2)
N
N/A
N
N
Y
N/A
N
L
EVENT
Input Overvoltage
Transient Overcurrent (ILIM
None
< IOUT < 2 × ILIM)
Persistent Overcurrent
Circuit Breaker(3)
Limit(4)
FLT ASSERTION
DELAY(1)
Persistent Overcurrent
Current
Output Short-Circuit to
GND
Circuit Breaker followed by
Current Limit
N
H
ILM Pin Open
(During Steady State)
Shutdown
N
L
tITIMER
ILM Pin Shorted to GND
Shutdown
Y
L
tITIMER
(1)
(2)
(3)
(4)
tITIMER
Applicable to TPS25970x variants only.
Applicable to TPS25972x variants only.
Applicable to TPS25974x variants only.
Applicable to TPS25970x and TPS25972x variants only.
Faults which are latched internally can be cleared either by power cycling the part (pulling VIN to 0 V) or by
pulling the EN/UVLO pin voltage below VSD. This action also releases the FLT pin for the TPS25970x variants
and resets the tRST timer for the TPS2597xA (auto-retry) variants.
During a latched fault, pulling the EN/UVLO just below the UVLO threshold has no impact on the device. This
fact is true for both TPS2597xL (latch-off) and TPS2597xA (auto-retry) variants.
For TPS2597xA (auto-retry) variants, on expiry of the tRST timer after a fault, the device restarts automatically
and the FLT pin is de-asserted (TPS25970A variant).
8.3.8 Power-Good Indication (PG)
The TPS25972x and TPS25974x variants provide an active high digital output (PG) which serves as a powergood indication signal and is asserted high depending on the voltage at the PGTH pin along with the device
state information. The PG is an open-drain pin and must be pulled up to an external supply.
After power up, PG is pulled low initially. The device initiates a inrush sequence in which the HFET is turned
on in a controlled manner. When the HFET gate voltage reaches the full overdrive indicating that the inrush
sequence is complete and the voltage at PGTH is above VPGTH(R), the PG is asserted after a de-glitch time
(tPGA).
PG is de-asserted if at any time during normal operation, the voltage at PGTH falls below VPGTH(F), or the device
detects a fault (except overcurrent). The PG de-assertion de-glitch time is tPGD.
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Overloa d E ve nt
Overcurren t blan king timer exp ired
Overloa d Removed
Device En abled
VUVL O(R)
EN/UV LO
0
IN
Slew rate ( dVdt) con trol led
star tup /Inrush cu rrent limiting
0
Acti ve Curren t
limiting (1)
VIN
OUT
0
(2)
PGTH
VPGTH (R)
VPGTH (F)
0
VPG
PG
(2)
tPGD
tPGA
tPGA
0
VIN
dVdt
0
VOUT + 2.8V
VHGate
0
tITIMER
ILIM
IINRU SH
IOUT
0
(1)
(2)
Not app licable to TPS25 974x
Not app licable to TPS25 970x
Tim e
Figure 8-13. TPS25972x, TPS25974x PG Timing Diagram
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Table 8-4. TPS25972x and TPS25974x PG Indication Summary
EVENT
DEVICE STATUS
Undervoltage (UVP or UVLO)
PG PIN STATUS
PG PIN TOGGLE DELAY
OFF
L
Overvoltage
(TPS25972x only)
ON (Clamping)
H (If PGTH pin voltage >
VPGTH(R))
L (If PGTH pin voltage <
VPGTH(F))
tPGA
tPGD
Overvoltage
(TPS25974x only)
OFF
L
tPGD
ON
H (If PGTH pin voltage >
VPGTH(R))
L (If PGTH pin voltage <
VPGTH(F))
tPGA
tPGD
ON
H (If PGTH pin voltage >
VPGTH(R))
L (If PGTH pin voltage <
VPGTH(F))
tPGA
tPGD
Persistent overload (TPS25972x
only)
ON (Current Limiting)
H (If PGTH pin voltage >
VPGTH(R))
L (If PGTH pin voltage <
VPGTH(F))
tPGA
tPGD
Persistent overload (TPS25974x
only)
OFF (Circuit-Breaker)
L
tPGD
Output short-circuit to GND
H (If PGTH pin voltage >
VPGTH(R))
Fast-trip followed by Current Limit
L (If PGTH pin voltage <
VPGTH(F))
tPGA
tPGD
ILM pin open
OFF
L (If PGTH < 1.1 V)
tPGD + tITIMER
ILM pin shorted to GND
OFF
L
tPGD
Overtemperature
OFF
L
tPGD
Steady state
Transient overcurrent
When there is no supply to the device, the PG pin is expected to stay low. However, there is no active pulldown
in this condition to drive this pin all the way down to 0 V. If the PG pin is pulled up to an independent supply
which is present even if the device is unpowered, there can be a small voltage seen on this pin depending on the
pin sink current, which is a function of the pullup supply voltage and resistor. Minimize the sink current to keep
this pin voltage low enough not to be detected as a logic HIGH by associated external circuits in this condition.
8.4 Device Functional Modes
The TPS25970x and TPS25974x variants have only one functional mode that applies when operated within the
recommended operating conditions.
The TPS25972x variants have three different functional modes depending on the OVCSEL pin connection.
Table 8-5. TPS25972x Overvoltage Clamp Threshold Selection
OVCSEL PIN CONNECTION
OVERVOLTAGE CLAMP THRESHOLD
Shorted to GND
3.89 V
Open
5.76 V
Connected to GND through a 390-kΩ resistor
13.88 V
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The TPS2597xx is a 2.7-V to 23-V, 7-A eFuse that is typically used for power rail protection applications.
The device operates from 2.7 V to 23 V with adjustable overvoltage and undervoltage protection. The device
provides ability to control inrush current and protection against overcurrent conditions. The device can be used
in a variety of systems such as adapter input protection, server, PC motherboard, add-on cards, enterprise
storage – RAID/HBA/SAN/eSSD, retail point-of-sale terminals, smartphones, and tablets. The design procedure
explained in the subsequent sections can be used to select the supporting component values based on the
application requirement. Additionally, a spreadsheet design tool, TPS2597xx Design Calculator, is available in
the web product folder.
9.1.1 Single Device, Self-Controlled
VIN = 2.7 to 23 V
IN
VOUT
OUT
VIN = 2.7 to 23 V
IN
VOUT
OUT
COUT
COUT
VLOGIC
EN/UV LO
PGTH
EN/UV LO
TPS25 972x
TPS25 970x
OVL O
OVCSE L
FLT
ITIMER
dVd t
VLOGIC
GND
PG
ITIMER
ILM
VIN = 2.7 to 23 V
IN
dVd t
GND
ILM
VOUT
OUT
COUT
PGTH
EN/UV LO
VLOGIC
TPS25 974x
OVL O
PG
ITIMER
dVd t
GND
ILM
Figure 9-1. Single Device, Self-Controlled
Other variations:
In a Host MCU controlled system, EN/UVLO or OVLO can also be driven from the host GPIO to control the
device.
ILM pin can be connected to the MCU ADC input for current monitoring purpose.
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Note
TI recommends to keep parasitic capacitance on ILM pin below 50 pF to ensure stable operation.
For the TPS25972x and TPS25974x variants, either VIN or VOUT can be used to drive the PGTH resistor divider
depending on which supply must be monitored for Power Good indication.
9.2 Typical Application
TPS2597xx can be used for server add-on card input power protection. During overcurrent or short-circuit event
at load side, TPS2597xx can quickly respond to this fault event by turning off the device and thus protect the
load from damage as well as prevent input supply from drooping. The ITIMER feature allows short duration peak
currents to pass through without tripping the eFuse, thereby meeting the transient load current profile of these
cards.
VIN = 12 V
IN
VOUT
OUT
R4
47 k
R1
470 k
3.3 V
TPS25 974L
D1*
F
PGTH
EN/UV LO
R5
5.6 k
R2
11 k
CIN
COUT
D2*
47 k
F
OVL O
PG
ITIMER
R3
47 k
dVd t
GND
CITIMER
CdVd t
1.3 nF
560 0 p F
ILM
RILM
* Optional circuit components needed for transient protection depending on input and output inductance.
Please refer to Transient Protection section for details.
Figure 9-2. Server Add-on Card Input Power Protection
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9.2.1 Design Requirements
Table 9-1. Design Parameters
PARAMETER
VALUE
Input supply voltage (VIN)
12 V
Undervoltage threshold (VIN(UV))
10.8 V
Overvoltage threshold (VIN(OV))
13.2 V
Output Power Good threshold (VPG)
11.4 V
Maximum continuous current
7A
Load transient blanking interval (tITIMER)
1 ms
Output capacitance (COUT)
470 μF
Output rise time (tR)
20 ms
Overcurrent threshold (ILIM)
7.7 A
Overcurrent response
Circuit breaker
Fault response
Latch-off
9.2.2 Detailed Design Procedure
9.2.2.1 Device Selection
Because the application requires circuit-breaker response to overcurrent with latch-off response after a fault, the
TPS25974L variant is selected after referring to the Device Comparison Table.
9.2.2.2 Setting Undervoltage and Overvoltage Thresholds
The supply undervoltage and overvoltage thresholds are set using the resistors R1, R2, and R3, whose values
can be calculated using Equation 10 and Equation 11:
VIN(UV) =
VIN(OV) =
VUVLO(R) × (R1 + R2 + R3)
R2 + R3
(10)
VOV(R) × (R1 + R2 + R3)
R3
(11)
Where VUVLO(R) is the UVLO rising threshold and VOV(R) is the OVLO rising threshold. Because R1, R2, and R3
leak the current from input supply VIN, these resistors must be selected based on the acceptable leakage current
from input power supply VIN. The current drawn by R1, R2, and R3 from the power supply is IR123 = VIN / (R1 +
R2 + R3). However, leakage currents due to external active components connected to the resistor string can add
error to these calculations. So, the resistor string current, IR123 must be chosen to be 20 times greater than the
leakage current expected on the EN/UVLO and OVLO pins.
From the device electrical specifications, both the EN/UVLO and OVLO leakage currents are 0.1 μA (maximum),
VOV(R) = 1.2 V and VUVLO(R) = 1.2 V. From design requirements, VIN(OV) = 13.2 V and VIN(UV) = 10.8 V. To solve
the equation, first choose the value of R1 = 470 kΩ and use the above equations to solve for R2 = 10.7 kΩ and
R3 = 48 kΩ.
Using the closest standard 1% resistor values, we get R1 = 470 kΩ, R2 = 11 kΩ, and R3 = 47 kΩ.
9.2.2.3 Setting Output Voltage Rise Time (tR)
For a successful design, the junction temperature of the device must be kept below the absolute maximum
rating during both dynamic (start-up) and steady-state conditions. Dynamic power stresses often are an order
of magnitude greater than the static stresses, so it is important to determine the right start-up time and inrush
current limit required with system capacitance to avoid thermal shutdown during start-up.
The slew rate (SR) needed to achieve the desired output rise time can be calculated as:
SR (V/ms) =
36
VIN V
12 V
= 20 ms
= 0.6 V/ms
tR ms
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The CdVdt needed to achieve this slew rate can be calculated as:
CdVdt pF =
3300
= 3300
0.6 = 5500 pF
SR V/ms
(13)
Choose the nearest standard capacitor value as 5600 pF.
For this slew rate, the inrush current can be calculated as:
IINRUSH mA = SR (V/ms) × COUT µF = 0.6 × 470 = 282 mA
(14)
The average power dissipation inside the part during inrush can be calculated as:
PDINRUSH W =
IINRUSH A × VIN V
= 0.282 × 12
= 1.69 W
2
2
(15)
For the given power dissipation, the thermal shutdown time of the device must be greater than the ramp-up time
tR to avoid start-up failure. Figure 9-3 shows the thermal shutdown limit. For 1.69 W of power, the shutdown time
is more than 10 s, which is very large as compared to tR = 20 ms. Therefore, it is safe to use 20 ms as the
start-up time for this application.
10000
5000
Time to TSD (ms)
2000
1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
20
40
60
80
PD (W)
100
120
140
Figure 9-3. Thermal Shut-Down Plot During Inrush
Note
In some systems, there can be active load circuits (for example, DC-DC converters) with low turnon threshold voltages which can start drawing power before the eFuse has completed the inrush
sequence. This action can cause additional power dissipation inside the eFuse during start-up and
can lead to thermal shutdown. TI recommends to use the Power Good (PG) pin of the eFuse to
enable and disable the load circuit. This action ensures that the load is turned on only when the
eFuse has completed its start-up and is ready to deliver full power without the risk of hitting thermal
shutdown.
9.2.2.4 Setting Power-Good Assertion Threshold
The Power Good assertion threshold can be set using the resistors R4 and R5 connected to the PGTH pin,
whose values can be calculated as:
VPG =
VPGTH(R) × (R4 + R5)
R5
(16)
Because R4 and R5 leak the current from the output rail VOUT, these resistors must be selected to minimize
the leakage current. The current drawn by R4 and R5 from the power supply is IR45 = VOUT / (R4 + R5).
However, leakage currents due to external active components connected to the resistor string can add error to
these calculations. So, the resistor string current, IR123 must be chosen to be 20 times greater than the PGTH
leakage current expected.
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From the device electrical specifications, PGTH leakage current is 1 μA (maximum), VPGTH(R) = 1.2 V and from
design requirements, VPG = 11.4 V. To solve the equation, first choose the value of R4 = 47 kΩ and calculate R5
= 5.52 kΩ. Choose the nearest 1% standard resistor value as R5 = 5.6 kΩ.
9.2.2.5 Setting Overcurrent Threshold (ILIM)
The overcurrent protection (Circuit Breaker) threshold can be set using the RILM resistor whose value can be
calculated as:
RILM Ω =
5747
= 5747
7.7 A = 746.4 Ω
ILIM A
(17)
Choose nearest 1% standard resistor value as 715 Ω.
9.2.2.6 Setting Overcurrent Blanking Interval (tITIMER)
The overcurrent blanking timer interval can be set using the CITIMER capacitor whose value can be calculated as:
CITIMER (nF) =
tITIMER (ms) × IITIMER (µA)
= 1 × 2
1.52 = 1.32 nF
∆ VITIMER (V)
(18)
Choose nearest standard capacitor value as 1.3 nF.
9.2.3 Application Curves
Figure 9-4. Power Up
Figure 9-5. Transient Overload
Figure 9-6. Circuit Breaker Response
9.3 Parallel Operation
Applications that need higher steady current can use two TPS25974x devices connected in parallel as shown
in Figure 9-7. In this configuration, the first device turns on initially to provide the inrush current control. The
second device is held in an OFF state by driving its EN/UVLO pin low using the PG signal of the first device.
After the inrush sequence is complete, the first device asserts its PG pin high and turns on the second device.
The second device asserts its PG signal to indicate when it has turned on fully, thereby indicating to the system
that the parallel combination is ready to deliver the full steady state current.
38
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After in steady state, both devices share current nearly equally. There can be a slight skew in the currents
depending on the part-to-part variation in the RON as well as the PCB trace resistance mismatch.
IN
OUT
VLOGIC
EN/UV LO
TPS25 974x
PGTH
PG
OVL O
ITIMER
dVd t
VIN = 2.7 to 23 V
GND
ILM
VOUT
C OUT
IN
OUT
EN/UV LO
TPS25 974x
PGTH
PG
To d ownstrea m
ena ble
OVL O
ITIMER
dVd t
GND
ILM
Figure 9-7. Two Devices Connected in Parallel for Higher Steady State Current Capability
The waveforms below illustrate the behavior of the parallel configuration during start-up as well as during steady
state.
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Figure 9-8. Parallel Devices Sequencing During Start-Up
Figure 9-9. Parallel Devices Load Current During Steady State and Overload
9.4 Power Supply Recommendations
The TPS2597xx devices are designed for a supply voltage range of 2.7 V ≤ VIN ≤ 23 V. TI recommends an
input ceramic bypass capacitor higher than 0.1 μF if the input supply is located more than a few inches from
the device. The power supply must be rated higher than the set current limit to avoid voltage droops during
overcurrent and short-circuit conditions.
9.4.1 Transient Protection
In the case of a short-circuit and overload current limit when the device interrupts current flow, the input
inductance generates a positive voltage spike on the input, and the output inductance generates a negative
voltage spike on the output. The peak amplitude of voltage spikes (transients) is dependent on the value of
inductance in series to the input or output of the device. Such transients can exceed the absolute maximum
ratings of the device if steps are not taken to address the issue. Typical methods for addressing transients
include:
•
•
•
•
•
Minimize lead length and inductance into and out of the device.
Use a large PCB GND plane.
Connect a Schottky diode from the OUT pin ground to absorb negative spikes.
Connect a low ESR capacitor larger than 1 μF at the OUT pin very close to the device.
Use a low-value ceramic capacitor CIN = 1 μF to absorb the energy and dampen the transients. The capacitor
voltage rating must be at least twice the input supply voltage to be able to withstand the positive voltage
excursion during inductive ringing.
Use Equation 19 to estimate the approximate value of input capacitance:
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LIN
VSPIKE(Absolute) = VIN + ILOAD × CIN
(19)
where
•
– VIN is the nominal supply voltage.
– ILOAD is the load current.
– LIN equals the effective inductance seen looking into the source.
– CIN is the capacitance present at the input.
Some applications can require the addition of a Transient Voltage Suppressor (TVS) to prevent transients
from exceeding the absolute maximum ratings of the device. In some cases, even if the maximum amplitude
of the transients is below the absolute maximum rating of the device, a TVS can help to absorb the excessive
energy dump and prevent it from creating very fast transient voltages on the input supply pin of the IC, which
can couple to the internal control circuits and cause unexpected behavior.
Figure 9-10 shows the circuit implementation with optional protection components.
VOUT
VIN = 2.7 to 23 V
IN
OUT
R1
D2
COUT
CLOAD
EN/UV LO
TPS25 970x
R2
D1
CIN
OVL O
FLT
ITIMER
R3
CITIMER
dVd t
GND
ILM
CDVD T
RILM
Figure 9-10. Circuit Implementation With Optional Protection Components
9.4.2 Output Short-Circuit Measurements
It is difficult to obtain repeatable and similar short-circuit testing results. The following contribute to variation in
results:
•
•
•
•
•
•
•
Source bypassing
Input leads
Circuit layout
Component selection
Output shorting method
Relative location of the short
Instrumentation
The actual short exhibits a certain degree of randomness because it microscopically bounces and arcs. Ensure
that configuration and methods are used to obtain realistic results. Do not expect to see waveforms exactly like
those in this data sheet because every setup is different.
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9.5 Layout
9.5.1 Layout Guidelines
•
•
•
•
•
•
•
•
•
42
For all applications, TI recommends a ceramic decoupling capacitor of 0.1 μF or greater between the IN
terminal and GND terminal.
The optimal placement of the decoupling capacitor is closest to the IN and GND terminals of the device. Care
must be taken to minimize the loop area formed by the bypass-capacitor connection, the IN terminal, and the
GND terminal of the IC.
High current-carrying power-path connections must be as short as possible and must be sized to carry at
least twice the full-load current.
The GND terminal must be tied to the PCB ground plane at the terminal of the IC with the shortest possible
trace. The PCB ground must be a copper plane or island on the board. TI recommends to have a separate
ground plane island for the eFuse. This plane does not carry any high currents and serves as a quiet ground
reference for all the critical analog signals of the eFuse. The device ground plane must be connected to the
system power ground plane using a star connection.
The IN and OUT pins are used for heat dissipation. Connect to as much copper area on top and bottom
PCB layers using as possible with thermal vias. The vias under the device also help to minimize the voltage
gradient across the IN and OUT pads and distribute current uniformly through the device, which is essential
to achieve the best on-resistance and current sense accuracy.
Locate the following support components close to their connection pins:
– RILM
– CdVdT
– CITIMER
– Resistors for the EN/UVLO, OVLO/OVCSEL, and PGTH pins
Connect the other end of the component to the GND pin of the device with shortest trace length. The trace
routing for the RILM, CITIMER and CdVdt components to the device must be as short as possible to reduce
parasitic effects on the current limit, overcurrent blanking interval and soft start timing. It's recommended to
keep parasitic capacitance on ILM pin below 50 pF to ensure stable operation. These traces must not have
any coupling to switching signals on the board.
Because the bias current on ILM pin directly controls the overcurrent protection behavior of the device, the
PCB routing of this node must be kept away from any noisy (switching) signals.
Protection devices such as TVS, snubbers, capacitors, or diodes must be placed physically close to the
device they are intended to protect. These protection devices must be routed with short traces to reduce
inductance. For example, TI recommends a protection Schottky diode to address negative transients due to
switching of inductive loads. TI also recommends to add a ceramic decoupling capacitor of 1 μF or greater
between OUT and GND. These components must be physically close to the OUT pins. Care must be taken
to minimize the loop area formed by the Schottky diode/bypass-capacitor connection, the OUT pin, and the
GND terminal of the IC.
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9.5.2 Layout Example
Inner GND layer
Top Power layer
7
OUT
5
IN
4
2
1
IN
6
3
OUT
8
9
10
Bottom Power layer
Figure 9-11. Layout Example - Single TPS25974x With PGTH Referred to OUT
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10 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
10.1 Device Support
10.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
10.2 Documentation Support
10.2.1 Related Documentation
For related documentation see the following:
• Texas Instruments, TPS2597EVM eFuse Evaluation Board user's guide
• Texas Instruments, TPS2597xx Design Calculator
10.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
10.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
10.5 Trademarks
HotRod™ and TI E2E™ are trademarks of Texas Instruments.
All trademarks are the property of their respective owners.
10.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
10.7 Glossary
TI Glossary
44
This glossary lists and explains terms, acronyms, and definitions.
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11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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15-Mar-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS25970ARPWR
ACTIVE
VQFN-HR
RPW
10
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2KNH
Samples
TPS25970LRPWR
ACTIVE
VQFN-HR
RPW
10
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2KOH
Samples
TPS25972ARPWR
ACTIVE
VQFN-HR
RPW
10
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2KPH
Samples
TPS25972LRPWR
ACTIVE
VQFN-HR
RPW
10
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2KQH
Samples
TPS25974ARPWR
ACTIVE
VQFN-HR
RPW
10
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2KRH
Samples
TPS25974LRPWR
ACTIVE
VQFN-HR
RPW
10
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2KSH
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of