TPS2811-Q1
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DUAL HIGH-SPEED MOSFET DRIVER
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FEATURES
1
•
•
•
•
•
•
•
Qualified for Automotive Applications
Industry-Standard Driver Replacement
25-ns Max Rise/Fall Times and 40-ns Max
Propagation Delay With 1-nF Load, VCC = 14 V
2-A Peak Output Current, VCC = 14 V
5-µA Supply Current With Input High or Low
4-V to 14-V Supply-Voltage Range; Internal
Regulator Extends Range to 40 V
−40°C to 125°C Ambient-Temperature
Operating Range
PW PACKAGE
(TOP VIEW)
REG_IN
1
8
REG_OUT
1IN
2
7
1OUT
GND
3
6
VCC
2IN
4
5
2OUT
DESCRIPTION
The TPS2811 dual high-speed MOSFET driver is capable of delivering peak currents of 2 A into highly capacitive
loads. This performance is achieved with a design that inherently minimizes shoot-through current and consumes
an order of magnitude less supply current than competitive products.
The TPS2811 driver include a regulator to allow operation with supply inputs between 14 V and 40 V. The
regulator output can power other circuitry, provided power dissipation does not exceed package limitations.
When the regulator is not required, REG_IN and REG_OUT can be left disconnected or both can be connected
to VCC or GND.
TPS2811 driver is available in an 8-pin TSSOP package and operates over a ambient temperature range of
−40°C to 125°C.
ORDERING INFORMATION (1)
PACKAGE (2)
TA
–40°C to 125°C
(1)
(2)
TSSOP – PW
Reel of 2000
ORDERABLE PART NUMBER
TPS2811QPWRQ1
TOP-SIDE MARKING
2811Q
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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FUNCTIONAL BLOCK DIAGRAM
REG_IN
1IN
2IN
GND
1
8
6
Regulator
2
VCC
1OUT
5
3
REG_IN
REG_OUT
7
4
REGULATOR DIAGRAM
2OUT
7.5 Ω
INPUT STAGE DIAGRAM
REG_OUT
OUTPUT STAGE DIAGRAM
VCC
VCC
Predrive
To Drive
Stage
IN
OUT
TERMINAL FUNCTIONS
TERMINAL
NAME
NO.
DESCRIPTION
REG_IN
1
Regulator input
1IN
2
Input 1
GND
3
Ground
2IN
4
Input 2
2OUT
5
Output 2; 2OUT = 2IN
VCC
6
Supply voltage
1OUT
7
Output 1; 1OUT = 1IN
REG_OUT
8
Regulator output
2
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ABSOLUTE MAXIMUM RATINGS (1) (2)
over operating free-air temperature range (unless otherwise noted)
VCC
−0.3 V to 15 V
Supply voltage
VCC −0.3 V to 42 V
Regulator input voltage range
REG_IN
Input voltage range
1IN, 2IN
−0.3 V to VCC +0.5 V
Output voltage range
1OUT, 2OUT
–0.5 < V < VCC +0.5 V
Continuous regulator output current
REG_OUT
Continuous output current
1OUT, 2OUT
25 mA
±100 mA
TA
Operating ambient temperature range
−40°C to 125°C
Tstg
Storage temperature range
−65°C to 150°C
(1)
(2)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to device GND pin.
RECOMMENDED OPERATING CONDITIONS
VCC
TA
MIN
MAX
Regulator input voltage
8
40
V
Supply voltage
4
14
V
-0.3
VCC
V
Input voltage
1IN, 2IN
Continuous regulator output current
REG_OUT
Operating ambient temperature range
UNIT
0
20
mA
-40
125
°C
ELECTRICAL CHARACTERISTICS
over recommended operating ambient temperature range, VCC = 10 V, REG_IN open, CL = 1 nF (unless otherwise noted)
MIN TYP (1)
MAX
VCC = 5 V
3.3
4
VCC = 10 V
5.8
9
VCC = 14 V
8.3
13
PARAMETER
TEST CONDITIONS
UNIT
INPUTS
VT+
VT_
Positive-going input threshold voltage
Negative-going input threshold voltage
VCC = 5 V
1
1.6
VCC = 10 V
1
4.2
VCC = 14 V
1
6.2
Input hysteresis
VCC = 5 V
II
Input current
Inputs = 0 V or VCC
CI
Input capacitance
V
1.6
-1
V
V
0.2
1
µA
5
10
pF
OUTPUTS
VOH
High-level output voltage
VOL
Low-level output voltage
IO
Peak output current
IO = −1 mA
IO = −100 mA
9.75
9.9
8
9.1
IO = 1 mA
V
0.18
0.25
IO = 100 mA
1
2
VCC = 10 V
2
V
A
REGULATOR
VO
Output voltage
14 ≤ REG_IN ≤ 40 V, 0 ≤ IO ≤ 20 mA
Output voltage in dropout
IO = 10 mA, REG_IN = 10 V
10
11.5
9
9.6
13
V
V
SUPPLY CURRENT
ICC
(1)
Supply current into VCC
Inputs high or low
0.2
5
µA
Supply current into REG_IN
REG_IN = 20 V, REG_OUT open
40
100
µA
Typical values are at TA = 25°C unless otherwise noted.
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SWITCHING CHARACTERISTICS
over recommended operating ambient temperature range, REG_IN open, CL = 1 nF (unless otherwise noted)
MIN TYP (1)
MAX
VCC = 14 V
14
25
VCC = 10 V
15
30
VCC = 5 V
20
35
VCC = 14 V
15
25
VCC = 10 V
15
30
VCC = 5 V
18
35
VCC = 14 V
25
40
VCC = 10 V
25
45
VCC = 5 V
34
50
VCC = 14 V
24
40
VCC = 10 V
26
45
VCC = 5 V
36
50
PARAMETER
tr
tf
tPHL
tPLH
(1)
4
TEST CONDITIONS
Rise time
Fall time
Propagation delay time, high-to-low-level output
Propagation delay time low-to-high-level output
UNIT
ns
ns
ns
ns
Typical values are at TA = 25°C unless otherwise noted.
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PARAMETER MEASUREMENT INFORMATION
TPS2811
+
1
Input
Regulator
8
2
7
3
6
4
5
0.1 µF
VCC
4.7 µF
Output
50 Ω
1 nF
Figure 1. Test Circuit For Measurement of Switching Characteristics
TPS2811
1
010 V dc
8
Regulator
2
7
3
6
xOUT
Current
Loop
VCC
10 V
+
0.1 µF
4.7 µF
5
4
Figure 2. Shoot-Through Current Test Setup
50%
1IN
50%
0V
tf
90%
1OUT
50%
tr
90%
50%
10%
10%
tPHL
0V
tPLH
Figure 3. Typical Timing Diagram
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TYPICAL CHARACTERISTICS
Table 1. Characteristics Graphs and Application Information
PARAMETER
vs PARAMETER 2
FIGURE
Typical Characteristics
Rise time
Supply voltage
Fall time
Supply voltage
5
Propagation delay time
Supply voltage
6, 7
Supply voltage
8
Load capacitance
9
Supply current
4
Ambient temperature
0
Input threshold voltage
Supply voltage
11
Regulator output voltage
Regulator input voltage
12, 13
Regulator quiescent current
Regulator input voltage
14
Peak source current
Supply voltage
15
Peak sink current
Supply voltage
16
Input voltage, high-to-low
17
Input voltage, low-to-high
18
Shoot-through current
General Applications
Switching test circuits and application information
19, 20
Voltage of 1OUT vs 2OUT
Time
Low-to-high
21, 22, 23
High-to-low
24, 25, 26
Low-to-high
28, 30
High-to-low
29, 31
Circuit for Measuring Paralleled Switching Characteristics
Switching test circuits and application information
Input voltage vs output voltage
27
Time
Hex-1 to Hex-4 Application Information
Driving test circuit and application information
Drain-source voltage vs drain current
32
Time
Time
Time
Hex-1 size
33
Hex-2 size
36
Hex-3 size
39
Hex-4 size
41
Hex-4 size parallel drive
45
Hex-1 size
34
Hex-2 size
37
Hex-3 size
40
Hex-4 size
43
Hex-4 size parallel drive
46
Hex-1 size
35
Hex-2 size
38
Hex-3 size
42
Hex-4 size
44
Hex-4 size parallel drive
47
Synchronous Buck Regulator Application
3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit
48
Q1 drain voltage vs gate voltage at turn-on
Time
Q1 drain voltage vs gate voltage at turn-off
Time
50
Q1 drain voltage vs Q2 gate-source voltage
Time
51, 52, 53
Output ripple voltage vs inductor current
Time
6
49
3A
54
5A
55
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RISE TIME
vs
SUPPLY VOLTAGE
FALL TIME
vs
SUPPLY VOLTAGE
22
22
CL = 1 nF
20
20
18
18
t f − Fall Time − ns
t r − Rise Time − ns
CL = 1 nF
TA = 125°C
16
TA = 75°C
TA = 25°C
14
TA = −25°C
12
TA = 125°C
TA = 75°C
16
TA = 25°C
14
TA = −50°C
10
10
5
6
7
11
12
8
9
10
VCC − Supply Voltage − V
13
14
5
6
7
Figure 4.
11
12
8
9
10
VCC − Supply Voltage − V
13
14
Figure 5.
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
SUPPLY VOLTAGE
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
SUPPLY VOLTAGE
45
45
CL = 1 nF
CL = 1 nF
40
40
t PLH − Propagation Delay T ime,
Low-To-High-Level Output − ns
t PHL − Propagation Delay T ime,
High-To-Low-Level Output − ns
TA = −50°C
TA = −25°C
12
35
30
TA = 125°C
25
TA = 75°C
20
TA = 25°C
35
TA = 25°C
TA = 75°C
30
TA =125°C
25
TA = −25°C
20
TA = −50°C
TA = −50°C
TA = −25°C
15
5
6
7
15
8
9
10
11
12
VCC − Supply Voltage − V
13
14
5
Figure 6.
6
7
8
9
10 11
12
VCC − Supply Voltage − V
13
14
Figure 7.
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SUPPLY CURRENT
vs
LOAD CAPACITANCE
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
16
2.5
12
1 MHz
10
8
6
500 kHz
100 kHz
4
40 kHz
I CC − Supply Current − mA
14
I CC − Supply Current − mA
VCC = 10 V
f = 100 kHz
TA = 25°C
Duty Cycle = 50%
CL = 1 nF
2
1.5
1
0.5
75 kHz
2
0
0
4
6
8
12
10
0
14
0.5
1
1.5
CL − Load Capacitance − nF
VCC − Supply Voltage − V
Figure 8.
Figure 9.
INPUT THRESHOLD VOLTAGE
vs
SUPPLY VOLTAGE
SUPPLY CURRENT
vs
AMBIENT TEMPERATURE
1.2
9
CL = 1 nF
VCC = 10 V
Duty Cycle = 50%
f = 100 kHz
I CC − Supply Current − mA
1.18
TA = 25°C
8
VIT − Input Threshold Voltage − V
1.19
1.17
1.16
1.15
1.14
1.13
1.12
1.11
1.1
−50
7
+ Threshold
6
5
− Threshold
4
3
2
1
0
−25
0
25
50
75
100
125
4
TA − Temperature − °C
Figure 10.
8
2
6
8
10
12
VCC − Supply Voltage − V
14
Figure 11.
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REGULATOR OUTPUT VOLTAGE
vs
REGULATOR INPUT VOLTAGE
REGULATOR OUTPUT VOLTAGE
vs
REGULATOR INPUT VOLTAGE
13
14
13
Regulator Output Voltage − V
Regulator Output Voltage − V
TA = −55°C
11
TA = 125°C
TA = 25°C
10
9
8
7
6
11
TA = 125°C
10
9
8
7
6
5
5
4
4
8
28 32
12
16 20
24
Regulator Input Voltage − V
36
40
4
6
8
10
12
14
Regulator Input Voltage − V
Figure 12.
Figure 13.
REGULATOR QUIESCENT CURRENT
vs
REGULATOR INPUT VOLTAGE
PEAK SOURCE CURRENT
vs
SUPPLY VOLTAGE
2.5
50
RL = 0.5 Ω
f = 100 kHz
Duty Cycle = 5%
TA = 25°C
TA = −55°C
45
2
40
TA = 25°C
Peak Source Current − A
Regulator Quiescent Current − µA
TA = −55°C
TA = 25°C
12
12
4
RL = 10 kΩ
RL = 10 kΩ
35
30
TA = 125°C
25
20
15
1.5
1
.5
10
RL = 10 kΩ
5
0
0
4
8
12
16
20
24
28
32
36
40
4
6
8
10
12
14
VCC − Supply Voltage − V
Regulator Input Voltage − V
Figure 14.
Figure 15.
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PEAK SINK CURRENT
vs
SUPPLY VOLTAGE
2.5
RL = 0.5 Ω
f = 100 kHz
Duty Cycle = 5%
TA = 25°C
Peak Sink Current − A
2
1.5
1
.5
0
4
6
8
10
12
VCC − Supply Voltage − V
Figure 16.
SHOOT-THROUGH CURRENT
vs
INPUT VOLTAGE, LOW-TO-HIGH
SHOOT-THROUGH CURRENT
vs
INPUT VOLTAGE, HIGH-TO-LOW
6
6
VCC = 10 V
CL = 0
TA = 25°C
VCC = 10 V
CL = 0
TA = 25°C
5
Shoot-Through Current − mA
Shoot-Through Current − mA
5
4
3
2
1
4
3
2
1
0
10
8
6
4
2
0
0
0
VI − Input Voltage, High-to-Low − V
Figure 17.
10
14
2
4
6
8
10
VI − Input Voltage, Low-to-High − V
Figure 18.
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APPLICATION INFORMATION
The TPS2811 circuits each contain one regulator and two MOSFET drivers. The regulator can be used to limit
VCC to between 10 V and 13 V for a range of input voltages from 14 V to 40 V, while providing up to 20 mA of dc
drive. The TPS2811 has inverting drivers. These MOSFET drivers are capable of supplying up to 2.1 A or sinking
up to 1.9 A (see Figures 15 and 16) of instantaneous current to n-channel or p-channel MOSFETs. The
TPS2811 MOSFET drivers have very fast switching times combined with very short propagation delays. These
features enhance the operation of today’s high-frequency circuits.
The CMOS input circuit has a positive threshold of approximately 2/3 of VCC, with a negative threshold of 1/3 of
VCC, and a very high input impedance in the range of 109Ω. Noise immunity is also very high because of the
Schmitt-trigger switching. In addition, the design is such that the normal shoot-through current in CMOS (when
the input is biased halfway between VCC and ground) is limited to less than 6 mA. The limited shoot-through is
evident in the graphs in Figures 17 and 18. The input stage shown in the functional block diagram better
illustrates the way the front end works. The circuitry of the device is such that regardless of the rise and/or fall
time of the input signal, the output signal will always have a fast transition speed; this basically isolates the
waveforms at the input from the output. Therefore, the specified switching times are not affected by the slopes of
the input waveforms.
The basic driver portion of the circuits operate over a supply voltage range of 4 V to 14 V with a maximum bias
current of 5 µA. Each driver consists of a CMOS input and a buffered output with a 2-A instantaneous drive
capability. They have propagation delays of less than 30 ns and rise and fall times of less than 20 ns each.
Placing a 0.1-µF ceramic capacitor between VCC and ground is recommended; this will supply the instantaneous
current needed by the fast switching and high current surges of the driver when it is driving a MOSFET.
The output circuit is also shown in the functional block diagram. This driver uses a unique combination of a
bipolar transistor in parallel with a MOSFET for the ability to swing from VCC to ground while providing 2 A of
instantaneous driver current. This unique parallel combination of bipolar and MOSFET output transistors provides
the drive required at VCC and ground to guarantee turn-off of even low-threshold MOSFETs. Typical bipolar-only
output devices don’t easily approach VCC or ground.
The regulator included in the TPS2811 has an input voltage range of 14 V to 40 V. It produces an output voltage
of 10 V to 13 V and is capable of supplying from 0 to 20 mA of output current. In grounded source applications,
this extends the overall circuit operation to 40 V by clamping the driver supply voltage (VCC) to a safe level for
both the driver and the MOSFET gate. The bias current for full operation is a maximum of 150 µA. A 0.1-µF
capacitor connected between the regulator output and ground is required to ensure stability. For transient
response, an additional 4.7-µF electrolytic capacitor on the output and a 0.1-µF ceramic capacitor on the input
will optimize the performance of this circuit. When the regulator is not in use, it can be left open at both the input
and the output, or the input can be shorted to the output and tied to either the VCC or the ground pin of the chip.
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Matching and Paralleling Connections
Figure 19 and Figure 20 show the delays for the rise and fall time of each channel. As can be seen on a 5-ns
scale, there is very little difference between the two channels at no load. Figures 23 and 24 show the difference
between the two channels for a 1-nF load on each output. There is a slight delay on the rising edge, but little or
no delay on the falling edge. As an example of extreme overload, Figures 25 and 26 show the difference
between the two channels, or two drivers in the package, each driving a 10-nF load. As would be expected, the
rise and fall times are significantly slowed down. Figures 28 and 29 show the effect of paralleling the two
channels and driving a 1-nF load. A noticeable improvement is evident in the rise and fall times of the output
waveforms. Finally, Figures 30 and 31 show the two drivers being paralleled to drive the 10-nF load and as could
be expected the waveforms are improved. In summary, the paralleling of the two drivers in a package enhances
the capability of the drivers to handle a larger load. Because of manufacturing tolerances, it is not recommended
to parallel drivers that are not in the same package.
TPS2811
1
50 Ω
Regulator
+
8
2
7
3
6
0.1 µF
VCC
4.7 µF
Output
1 nF
4
5
Figure 19. Test Circuit for Measuring Switching Characteristics
TPS2811
1
50 Ω
Regulator
+
8
2
7
3
6
4
5
0.1 µF
VCC
4.7 µF
Output 1
CL(1)
Output 2
CL(2)
A.
Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.
Figure 20. Test Circuit for Measuring Switching Characteristics With the Inputs Connected in Parallel
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TA = 25°C
VI = 14 V
CL = 0
Paralleled Input
VO at 1OUT (5 V/div, 5 ns/div)
VO at 2OUT (5 V/div, 5 ns/div)
VO at 1OUT (5 V/div, 5 ns/div)
VO at 2OUT (5 V/div, 5 ns/div)
TA = 25°C
VI = 14 V
CL = 0
Paralleled Inputs
t − Time
t − Time
Figure 21. Voltage of 1OUT vs Voltage at 2OUT,
Low-to-High Output Delay
Figure 22. Voltage at 1OUT vs Voltage at 2OUT,
High-to-Low Output Delay
TA = 25°C
VI = 14 V
CL = 1 nF on Each Output
Paralleled Input
VO at 1OUT (5 V/div, 10 ns/div)
VO at 2OUT
(5 V/div, 10 ns/div)
VO at 1OUT
(5 V/div, 10 ns/div)
VO at 2OUT (5 V/div, 10 ns/div)
TA = 25°C
VI = 14 V
CL = 1 nF Each Output
Paralleled Input
t − Time
t − Time
Figure 23. Voltage at 1OUT vs Voltage at 2OUT,
Low-to-High Output Delay
Figure 24. Voltage at 1OUT vs Voltage at 2OUT,
High-to-Low Output Delay
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VO at 1OUT
(5 V/div, 20 ns/div)
VO at 2OUT
(5 V/div, 20 ns/div)
VO at (5 V/div, 20 ns/div)
VO at 2OUT (5 V/div, 20 ns/div)
TA = 25°C
VCC = 14 V
CL = 10 nF on Each Output
Paralleled Input
TA = 25°C
VCC = 14 V
CL = 10 nF on Each Output
Paralleled Input
t − Time
t − Time
Figure 25. Voltage at 1OUT vs Voltage at 2OUT,
Low-to-High Output Delay
Figure 26. Voltage at 1OUT vs Voltage at 2OUT,
High-to-Low Output Delay
A.
Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.
TPS2811
1
50 Ω
Regulator
+
0.1 µF
8
2
7
3
6
VCC
4.7 µF
Output
CL
4
5
Figure 27. Test Circuit for Measuring Paralleled Switching Characteristics
14
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VI (5 V/div, 20 ns/div)
TA = 25°C
VCC = 14 V
CL = 1 nF
Paralleled Input
and Output
VI (5 V/div, 20 ns/div)
TA = 25°C
VCC = 14 V
CL = 1 nF
Paralleled Input
and Output
VO (5 V/div, 20 ns/div)
VO (5 V/div, 20 ns/div)
t − Time
t − Time
Figure 28. Input Voltage vs Output Voltage,
Low-to-High Propagation Delay of Paralleled
Drivers
Figure 29. Input Voltage vs Output Voltage,
High-to-Low Propagation Delay of Paralleled
Drivers
TA = 25°C
VCC = 14 V
CL = 10 nF
Paralleled Input
and Output
VI (5 V/div, 20 ns/div)
VI (5 V/div, 20 ns/div)
TA = 25°C
VCC = 14 V
CL = 10 nF
Paralleled Input
and Output
VO (5 V/div, 20 ns/div)
VO (5 V/div, 20 ns/div)
t − Time
t − Time
Figure 30. Input Voltage vs Output Voltage,
Low-to-High Propagation Delay of Paralleled
Drivers
Figure 31. Input Voltage vs Output Voltage,
High-to-Low Propagation Delay of Paralleled
Drivers
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Figures 33 through 47 illustrate the performance of the TPS2811 driving MOSFETs with clamped inductive loads,
similar to what is encountered in discontinuous-mode flyback converters. The MOSFETs that were tested range
in size from Hex-1 to Hex-4, although the TPS28xx family is only recommended for Hex-3 or below.
The test circuit is shown in Figure 32. The layout rules observed in building the test circuit also apply to real
applications. Decoupling capacitor C1 is a 0.1-µF ceramic device, connected between VCC and GND of the
TPS2811, with short lead lengths. The connection between the driver output and the MOSFET gate, and
between GND and the MOSFET source, are as short as possible to minimize inductance. Ideally, GND of the
driver is connected directly to the MOSFET source. The tests were conducted with the pulse generator frequency
set very low to eliminate the need for heat sinking, and the duty cycle was set to turn off the MOSFET when the
drain current reached 50% of its rated value. The input voltage was adjusted to clamp the drain voltage at 80%
of its rating.
As shown, the driver is capable of driving each of the Hex-1 through Hex-3 MOSFETs to switch in 20 ns or less.
Even the Hex-4 is turned on in less than 20 ns. Figures 45, 46 and 47 show that paralleling the two drivers in a
package enhances the gate waveforms and improves the switching speed of the MOSFET. Generally, one driver
is capable of driving up to a Hex-4 size. The TPS2811 family is even capable of driving large MOSFETs that
have a low gate charge.
VI
CR1
L1
Current
Loop
1
Regulator
8
Q1
R1
50 Ω
2
7
3
6
4
5
+
VDS
VDS
VGS
VCC
+
C1
0.1 µF
C2
4.7 µF
Figure 32. TPS2811 Driving Hex-1 through Hex-4 Devices
16
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TA = 25°C
VCC = 14 V
VI = 48 V
SLVSAE0 – JUNE 2010
TA = 25°C
VCC = 14 V
VI = 48 V
VDS (20 V/div, 0.5 µs/div)
VDS (20 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
ID (0.5 A/div , 0.5 µs/div)
t − Time
t − Time
Figure 33. Drain-Source Voltage vs Drain Current,
TPS2811 Driving an IRFD014 (Hex-1 Size)
Figure 34. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-on, TPS2811 Driving an IRFD014
(Hex-1 Size)
TA = 25°C
VCC = 14 V
VI = 48 V
VDS (20 V/div, 50 ns/div)
VDS (50 V/div, 0.2 µs/div)
TA = 25°C
VCC = 14 V
VI = 80 V
VGS (5 V/div, 50 ns/div)
VGS (0.5 A/div , 0.2 µs/div)
t − Time
t − Time
Figure 35. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-off, TPS2811 Driving an IRFD014
(Hex-1 Size)
Figure 36. Drain-Source Voltage vs Drain Current,
TPS2811 Driving an IRFD120 (Hex-2 Size)
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TA = 25°C
VCC = 14 V
VI = 80 V
TA = 25°C
VCC = 14 V
VI = 80 V
VDS (50 V/div, 50 ns/div)
VDS (50 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
t − Time
t − Time
Figure 37. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-on, TPS2811 Driving an IRFD120
(Hex-2 Size)
Figure 38. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-off, TPS2811 Driving an IRFD120
(Hex-2 Size)
TA = 25°C
VCC = 14 V
VI = 80 V
VDS (50 V/div, 50 ns/div)
VDS (50 V/div, 2 µs/div)
TA = 25°C
VCC = 14 V
VI = 80 V
VGS (5 A/div , 50 ns/div)
ID (5 A/div , 2 µs/div)
t − Time
t − Time
Figure 39. Drain-Source Voltage vs Drain Current,
TPS2811 Driving an IRF530 (Hex-3 Size)
Figure 40. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-on, TPS2811 Driving an IRF530
(Hex-3 Size)
18
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VDS (50 V/div, 0.2 µs/div)
VDS (50 V/div, 50 ns/div)
TA = 25°C
VCC = 14 V
VI = 350 V
TA = 25°C
VCC = 14 V
VI = 80 V
ID (2 A/div ,
0.2 µs/div)
VGS (5 V/div, 50 ns/div)
t − Time
t − Time
Figure 41. Drain-Source Voltage vs Drain Current,
One Driver, TPS2811 Driving an IRF840 (Hex-4
Size)
Figure 42. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-off, TPS2811 Driving an IRF530
(Hex-3 Size)
VDS (50 V/div, 50 ns/div)
VDS (50 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
TA = 25°C
VCC = 14 V
VI = 350 V
TA = 25°C
VCC = 14 V
VI = 350 V
t − Time
t − Time
Figure 43. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-on, One Driver, TPS2811 Driving
an IRF840 (Hex-4 Size)
Figure 44. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-off, One Driver, TPS2811 Driving
an IRF840 (Hex-4 Size)
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VDS (50 V/div, 0.2 µs/div)
VDS (50 V/div,
50 ns/div)
TA = 25°C
VCC = 14 V
VI = 350 V
VGS (5 V/div,
50 ns/div)
ID (2 A/div ,
0.2 µs/div)
TA = 25°C
VCC = 14 V
VI = 350 V
t − Time
t − Time
Figure 45. Drain-Source Voltage vs Drain Current,
Parallel Drivers, TPS2811 Driving an IRF840 (Hex-4
Size)
Figure 46. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-on, Parallel Drivers, TPS2811
Driving an IRF840 (Hex-4 Size)
VDS (50 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
TA = 25°C
VCC = 14 V
VI = 350 V
t − Time
Figure 47. Drain-Source Voltage vs Gate-Source Voltage, at Turn-off, Parallel Drivers, TPS2811 Driving an
IRF840 (Hex-4 Size)
20
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Synchronous Buck Regulator
Figure 48 is the schematic for a 100-kHz synchronous-rectified buck converter implemented with a TL5001
pulse-width-modulation (PWM) controller and a TPS2812 driver. The bill of materials is provided in Table 1. The
converter operates over an input range from 5.5 V to 12 V and has a 3.3-V output capable of supplying 3 A
continuously and 5 A during load surges. The converter achieves an efficiency of 90.6% at 3 A and 87.6% at 5 A.
Figures 49 and 50 show the power switch switching performance. The output ripple voltage waveforms are
documented in Figures 54 and 55.
The TPS2812 drives both the power switch, Q2, and the synchronous rectifier, Q1. Large shoot-through currents,
caused by power switch and synchronous rectifier remaining on simultaneously during the transitions, are
prevented by small delays built into the drive signals, using CR2, CR3, R11, R12, and the input capacitance of
the TPS2812. These delays allow the power switch to turn off before the synchronous rectifier turns on and vice
versa. Figure 51 shows the delay between the drain of Q2 and the gate of Q1; expanded views are provided in
Figures 52 and 53.
Q1
IRF7406
L1
27 µF
3
1
J1
VI
1
VI
2
GND
3
GND
4
J2
C100
100 µF
16 V
+
C5
100 µF
16 V
+
C11
0.47 µF
+
R5
10 kΩ
2
1
2
3
4
REG_IN
1 IN
GND
REG_OUT
U2
TPS2812D
2 IN
1 OUT
VCC
2 OUT
C14
0.1 µF
CR1
30BQ015
C7
100 µF
16 V
C13
10 µF
10 V
R7
3.3 Ω
2
1
+
C12
100 µF
16 V
8
1
3.3 V
2
3.3 V
3
GND
4
GND
7
3
6
5
Q2
IRF7201
R4
2.32 kΩ
1%
C6
1000 pF
R13
10 kΩ
C4
0.022 µF
R2
1.6 kΩ
C3
0.0022
µF
R6
15 Ω
R3
180 Ω
C2
0.033 µF
R10
1 kΩ
CR2
1
2
3
OUT
VCC
COMP
4
FB
BAS16ZX
CR3
R11
30 kΩ
BAS16ZX
R12
10 kΩ
R1
1.00 kΩ
1%
U1
TL5001CD
C15
1 µF
GND T
R
8
7
R9
90.9 kΩ
1%
DTC
SCP
6
5
R8
121 kΩ
1%
C9
0.22 µF
+
C1
1 µF
NOTE: If the parasitics of the external circuit cause the voltage to violate the Absolute Maximum Rating for the Output pins,
Schottky diodes should be added from ground to output and from output to VCC.
Figure 48. 3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit
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Table 2. Bill of Materials, 3.3-V, 3-A Synchronous-Rectified Buck Converter (1)
REFERENCE
TL5001CD, PWM
Texas Instruments
972-644-5580
U2
TPS2812D, N.I. MOSFET Driver
Texas Instruments
972-644-5580
3 A, 15 V, Schottky, 30BQ015
International Rectifier
310-322-3331
Signal Diode, BAS16ZX
Zetex
516-543-7100
AVX
800-448-9411
TDK
708-803-6100
CR2,CR3
C1
1 µF, 16 V, Tantalum
C2
0.033 µF, 50 V
C3
0.0022 µF, 50 V
C4
0.022 µF, 50 V
C5,C7,C10,C12
22
VENDOR
U1
CR1
(1)
DESCRIPTION
100 µF, 16 V, Tantalum, TPSE107M016R0100
C6
1000 pF, 50 V
C9
0.22 µF, 50 V
C11
0.47 µF, 50 V, Z5U
C13
10 µF, 10 V, Ceramic, CC1210CY5V106Z
C14
0.1 µF, 50 V
C15
1.0 µF, 50 V
J1,J2
4-Pin Header
Nova Magnetics, Inc.
972-272-8287
L1
27 µH, 3 A/5 A, SML5040
International Rectifier
310-322-3331
Q1
IRF7406, P-FET
International Rectifier
310-322-3331
Q2
IRF7201, N-FET
R1
1.00 kΩ, 1%
R2
1.6 kΩ
R3
180 Ω
R4
2.32 kΩ, 1 %
R5,R12,R13
10 kΩ
R6
15 Ω
R7
3.3 Ω
R8
121 kΩ, 1%
R9
90.9 kΩ, 1%
R10
1 kΩ
R11
30 kΩ
Unless otherwise specified, capacitors are X7R ceramics, and resistors are 5%, 1/10 W.
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VD (5 V/div, 20 ns/div)
VG (2 V/div, 20 ns/div)
VD (5 V/div, 20 ns/div)
TA = 25°C
VI = 12 V
VO = 3.3 V at 5A
VG (2 V/div, 20 ns/div)
TA = 25°C
VI = 12 V
VO = 3.3 V at 5A
t − Time
t − Time
Figure 49. Q1 Drain Voltage vs Gate Voltage, at
Switch Turn-on
Figure 50. Q1 Drain Voltage vs Gate Voltage, at
Switch Turn-off
TA = 25°C
VI = 12 V
VO = 3.3 V at 5A
VD (5 V/div, 0.5 µs/div)
TA = 25°C
VI = 12 V
VO = 3.3 V at 5A
VD (5 V/div, 20 ns/div)
VGS (2 V/div, 0.5 µs/div)
VGS (2 V/div, 20 ns/div)
t − Time
t − Time
Figure 51. Q1 Drain Voltage vs Q2 Gate-Source
Voltage
Figure 52. Q1 Drain Voltage vs Q2 Gate-Source
Voltage
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TA = 25°C
VI = 12 V
VO = 3.3 V at 5A
VD (5 V/div, 20 ns/div)
VGS (2 V/div, 20 ns/div)
t − Time
Figure 53. Q1 Drain Voltage vs Q2 Gate-Source Voltage
TA = 25°C
VI = 12 V
VO = 3.3 V at 3A
Inductor Current (2 A/div, 2 µs/div)
Inductor Current (1 A/div, 2 µs/div)
TA = 25°C
VI = 12 V
VO = 3.3 V at 5 A
1
1
Output Ripple Voltage (20 mV/div, 2 µs/div)
2
2
Output Ripple Voltage (20 mV/div, 2 µs/div)
t − Time
t − Time
Figure 54. Output Ripple Voltage vs Inductor
Current, at 3 A
24
Figure 55. Output Ripple Voltage vs Inductor
Current, at 5 A
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS2811QPWRQ1
ACTIVE
TSSOP
PW
8
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
2811Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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