SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
D Industry-Standard Driver Replacement
D 25-ns Max Rise/Fall Times and 40-ns Max
TPS2811, TPS2812, TPS2813 .
PACKAGES
(TOP VIEW)
Propagation Delay − 1-nF Load, VCC = 14 V
D 2-A Peak Output Current, VCC = 14 V
D 5-µA Supply Current — Input High or Low
D 4-V to 14-V Supply-Voltage Range; Internal
D
Regulator Extends Range to 40 V (TPS2811,
TPS2812, TPS2813)
−40°C to 125°C Ambient-Temperature
Operating Range
REG_IN
1IN
GND
2IN
TPS2814
8
2
7
3
6
4
5
REG_OUT
1OUT
VCC
2OUT
. . . D, P, AND PW PACKAGES
(TOP VIEW)
1IN1
1IN2
2IN1
2IN2
description
The TPS28xx series of dual high-speed MOSFET
drivers are capable of delivering peak currents of 2 A
into highly capacitive loads. This performance is
achieved with a design that inherently minimizes
shoot-through current and consumes an order of
magnitude less supply current than competitive
products.
1
. . D, P, AND PW
TPS2815
The TPS2811, TPS2812, and TPS2813 drivers include
a regulator to allow operation with supply inputs
between 14 V and 40 V. The regulator output can power
other circuitry, provided power dissipation does
1
8
2
7
3
6
4
5
GND
1OUT
VCC
2OUT
. . . D, P, AND PW PACKAGES
(TOP VIEW)
1IN1
1IN2
2IN1
2IN2
1
8
2
7
3
6
4
5
GND
1OUT
VCC
2OUT
not exceed package limitations. When the regulator is not required, REG_IN and REG_OUT can be left disconnected
or both can be connected to VCC or GND.
The TPS2814 and the TPS2815 have 2-input gates that give the user greater flexibility in controlling the MOSFET.
The TPS2814 has AND input gates with one inverting input. The TPS2815 has dual-input NAND gates.
TPS281x series drivers, available in 8-pin PDIP, SOIC, and TSSOP packages operate over a ambient temperature
range of −40°C to 125°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
TA
−40°C
to
125°C
INTERNAL
REGULATOR
LOGIC FUNCTION
SMALL
OUTLINE
(D)
PLASTIC
DIP
(P)
Yes
Dual inverting drivers
Dual noninverting drivers
One inverting and one noninverting driver
TPS2811D
TPS2812D
TPS2813D
TPS2811P
TPS2812P
TPS2813P
TPS2811PW
TPS2812PW
TPS2813PW
Dual 2-input AND drivers, one inverting input on each driver
Dual 2-input NAND drivers
TPS2814D
TPS2814P
TPS2814PW
No
TPS2815D
TPS2815P
TPS2815PW
TSSOP (PW)
The D package is available taped and reeled. Add R suffix to device type (e.g., TPS2811DR). The PW package is only available left-end
taped and reeled and is indicated by the R suffix on the device type (e.g., TPS2811PWR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
!"# $ %& ' # "$ (&)*%"# +"#',
+&%#$ % ! # $('% %"# $ (' #-' #' !$ '."$ $# &!' #$
$#" +" + /" " #0, +&%# ( %'$$ 1 + '$ # '%'$$" *0 %*&+'
#'$# 1 "** (" "!'#' $,
Copyright 2002, Texas Instruments Incorporated
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1
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
functional block diagram
regulator diagram (TPS2811, TPS2812,
TPS2813 only)
REG_IN
TPS2811
REG_IN
1IN
2IN
GND
1
Regulator
2
8
6
7
4
5
3
REG_OUT
VCC
1OUT
2OUT
7.5 Ω
REG_OUT
TPS2812
REG_IN
1IN
1
Regulator
8
6
2
7
2IN
GND
REG_OUT
VCC
1OUT
4
5
3
2OUT
input stage diagram
VCC
TPS2813
REG_IN
1IN
2IN
GND
1
Regulator
2
7
1IN2
2IN1
2IN2
GND
5
3
1IN2
2IN1
2IN2
GND
2
6
1
7
2
VCC
1OUT
2OUT
IN
To Drive
Stage
VCC
1OUT
3
5
4
2OUT
output stage diagram
VCC
8
Predrive
TPS2815
1IN1
REG_OUT
4
TPS2814
1IN1
8
6
1
2
3
4
6
7
5
VCC
1OUT
OUT
2OUT
8
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SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
TPS28xxY chip information
This chip, when properly assembled, displays characteristics similar to those of the TPS28xx. Thermal compression
or ultrasonic bonding may be used on the doped aluminum bonding pads. The chip may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(8)
REG_IN
(1)
(2)
(1)
1IN
(8)
2IN
(4)
TPS2811Y
TPS2812Y
TPS2813Y
(7)
(6)
(5)
REG_OUT
1OUT
VCC
2OUT
(3)
(7)
GND
(2)
1IN1
(1)
(7)
(2)
1IN2
2IN1
2IN2
(6)
(3)
TPS2814Y
(5)
(4)
1OUT
VCC
2OUT
(8)
57
(6)
GND
1IN1
(1)
(7)
(2)
1IN2
(3)
2IN1
(5)
2IN2
(3)
TPS2815Y
(6)
(5)
(4)
1OUT
VCC
2OUT
(8)
GND
(4)
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
47
TJmax OPERATING TEMPERATURE = 150°C
TOLERANCES ARE ± 10%.
ALL DIMENSIONS ARE IN MILS.
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3
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
Terminal Functions
TPS2811, TPS2812, TPS2813
TERMINAL NUMBERS
TERMINAL
NAME
TPS2811
Dual Inverting
Drivers
TPS2812
Dual Noninverting
Drivers
TPS2813
Complimentary
Drivers
REG_IN
1
1
1
Regulator input
1IN
2
2
2
Input 1
GND
3
3
3
Ground
2IN
4
4
4
Input 2
2OUT
5 = 2IN
5 = 2IN
5 = 2IN
VCC
1OUT
6
6
6
7 = 1IN
7 = 1IN
7 = 1IN
8
8
8
REG_OUT
DESCRIPTION
Output 2
Supply voltage
Output 1
Regulator output
TPS2814, TPS2815
TERMINAL NUMBERS
TERMINAL
NAME
TPS2814
Dual AND Drivers with Single
Inverting Input
TPS2815
Dual NAND Drivers
1IN1
1
1
Noninverting input 1 of driver 1
1IN2
2
-
Inverting input 2 of driver 1
1IN2
-
2
Noninverting input 2 of driver 1
2IN1
3
3
Noninverting input 1 of driver 2
2IN2
4
-
Inverting input 2 of driver 2
2IN2
-
4
Noninverting input 2 of driver 2
2OUT
5 = 2IN1 • 2IN2
5 = 2IN1 • 2IN2
VCC
1OUT
6
6
7 = 1IN1 • 1IN2
7 = 1IN1 • 1IN2
Output 1
GND
8
8
Ground
DESCRIPTION
Output 2
Supply voltage
DISSIPATION RATING TABLE
4
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
P
1090 mW
8.74 mW/°C
697 mW
566 mW
D
730 mW
5.84 mW/°C
467 mW
380 mW
PW
520 mW
4.17 mW/°C
332 mW
270 mW
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SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 15 V
Regulator input voltage range, REG_IN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC −0.3 V to 42 V
Input voltage range, 1IN, 2IN, 1IN1, 1IN2, 1IN2, 2IN1, 2IN2, 2IN2 . . . . . . . . . . . . . . . . . −0.3 V to VCC +0.5 V
Output voltage range, 1OUT, 2OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 < V < VCC +0.5 V
Continuous regulator output current, REG_OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA
Continuous output current, 1OUT, 2OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±100 mA
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating ambient temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to device GND pin.
recommended operating conditions
MIN
MAX
Regulator input voltage range
8
40
V
Supply voltage, VCC
4
14
V
−0.3
V
0
VCC
20
mA
−40
125
°C
Input voltage, 1IN1, 1IN2, 1IN2, 2IN1, 2IN2, 2IN2, 1IN, 2IN
Continuous regulator output current, REG_OUT
Ambient temperature operating range
UNIT
TPS28xx electrical characteristics over recommended operating ambient temperature range,
VCC = 10 V, REG_IN open for TPS2811/12/13, CL = 1 nF (unless otherwise noted)
inputs
PARAMETER
TYP†
MAX
VCC = 5 V
VCC = 10 V
3.3
4
V
5.8
9
V
VCC = 14 V
VCC = 5 V
8.3
13
V
TEST CONDITIONS
Positive-going input threshold voltage
VCC = 10 V
VCC = 14 V
Negative-going input threshold voltage
Input hysteresis
VCC = 5 V
Inputs = 0 V or VCC
Input current
MIN
UNIT
1
1.6
V
1
4.2
V
1
6.2
V
1.6
V
−1
Input capacitance
† Typicals are for TA = 25°C unless otherwise noted.
0.2
1
µA
5
10
pF
MAX
outputs
TEST CONDITIONS
MIN
TYP†
9.75
9.9
High-level output voltage
IO = −1 mA
IO = −100 mA
8
9.1
Low-level output voltage
IO = 1 mA
IO = 100 mA
PARAMETER
Peak output current
† Typicals are for TA = 25°C unless otherwise noted.
VCC = 10 V
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V
0.18
0.25
1
2
2
UNIT
V
A
5
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
regulator (TPS2811/2812/2813 only)
PARAMETER
Output voltage
Output voltage in dropout
† Typicals are for TA = 25°C unless otherwise noted.
TEST CONDITIONS
MIN
TYP†
MAX
13
UNIT
14 ≤ REG_IN ≤ 40 V,
0 ≤ IO ≤ 20 mA
10
11.5
IO = 10 mA,
REG_IN = 10 V
9
9.6
MIN
TYP†
MAX
0.2
5
µA
40
100
µA
V
V
supply current
PARAMETER
Supply current into VCC
TEST CONDITIONS
Inputs high or low
Supply current into REG_IN
† Typicals are for TA = 25°C unless otherwise noted.
REG_IN = 20 V,
REG_OUT open
UNIT
TPS28xxY electrical characteristics at TA = 25°C, VCC = 10 V, REG_IN open for TPS2811/12/13,
CL = 1 nF (unless otherwise noted)
inputs
PARAMETER
TEST CONDITIONS
Positive-going input threshold voltage
Negative-going input threshold voltage
Input hysteresis
Input current
MIN
TYP
MAX
UNIT
VCC = 5 V
VCC = 10 V
3.3
V
5.8
V
VCC = 14 V
VCC = 5 V
8.2
V
1.6
V
VCC = 10 V
VCC = 14 V
3.3
V
4.2
V
VCC = 5 V
Inputs = 0 V or VCC
1.2
V
0.2
µA
5
pF
Input capacitance
outputs
PARAMETER
TEST CONDITIONS
MIN
TYP
9.9
High-level output voltage
IO = −1 mA
IO = −100 mA
IO = 1 mA
IO = 100 mA
0.18
Low-level output voltage
Peak output current
VCC = 10.5 V
MAX
UNIT
V
9.1
V
1
2
A
regulator (TPS2811, 2812, 2813)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output voltage
14 ≤ REG_IN ≤ 40 V,
0 ≤ IO ≤ 20 mA
11.5
V
Output voltage in dropout
IO = 10 mA,
REG_IN = 10 V
9.6
V
power supply current
PARAMETER
TEST CONDITIONS
Supply current into VCC
Inputs high or low
Supply current into REG_IN
REG_IN = 20 V,
6
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REG_OUT open
MIN
TYP
MAX
UNIT
0.2
µA
40
µA
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
switching characteristics for all devices over recommended operating ambient temperature range,
REG_IN open for TPS2811/12/13, CL = 1 nF (unless otherwise specified)
PARAMETER
tr
tf
tPHL
tPLH
TEST CONDITIONS
Rise time
Fall time
Prop delay time high-to-low-level output
Prop delay time low-to-high-level output
MIN
TYP
MAX
VCC = 14 V
VCC = 10 V
14
25
15
30
VCC = 5 V
VCC = 14 V
20
35
15
25
VCC = 10 V
VCC = 5 V
15
30
18
35
VCC = 14 V
VCC = 10 V
25
40
25
45
VCC = 5 V
VCC = 14 V
34
50
24
40
VCC = 10 V
VCC = 5 V
26
45
36
50
UNIT
ns
ns
ns
ns
PARAMETER MEASUREMENT INFORMATION
TPS2811
+
1
Input
Regulator
8
2
7
3
6
4
5
50 Ω
0.1 µF
VCC
4.7 µF
Output
1 nF
NOTE A: Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.
Figure 1. Test Circuit For Measurement of Switching Characteristics
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7
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
PARAMETER MEASUREMENT INFORMATION
TPS2811
1
0−10 V dc
8
Regulator
2
7
3
6
xOUT
Current
Loop
VCC
10 V
0.1 µF
+
4.7 µF
5
4
Figure 2. Shoot-through Current Test Setup
50%
1IN
50%
0V
tf
90%
1OUT
tr
90%
50%
50%
10%
10%
tPHL
0V
tPLH
Figure 3. Typical Timing Diagram (TPS2811)
TYPICAL CHARACTERISTICS
Tables of Characteristics Graphs and Application Information
typical characteristics
PARAMETER
vs PARAMETER 2
FIGURE
PAGE
4
10
Supply voltage
5
10
Supply voltage
6, 7
10
Supply voltage
8
11
Load capacitance
9
11
Ambient temperature
10
11
Rise time
Supply voltage
Fall time
Propagation delay time
Supply current
Input threshold voltage
Supply voltage
11
11
Regulator output voltage
Regulator input voltage
12, 13
12
Regulator quiescent current
Regulator input voltage
14
12
Peak source current
Supply voltage
15
12
Peak sink current
Supply voltage
16
13
Input voltage, high-to-low
17
13
Input voltage, low-to-high
18
13
Shoot-through current
8
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SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
TYPICAL CHARACTERISTICS
Tables of Characteristics Graphs and Application Information (Continued)
general applications
PARAMETER
vs PARAMETER 2
Switching test circuits and application information
Voltage of 1OUT vs 2OUT
Time
FIGURE
PAGE
19, 20
15
Low-to-high
21, 23, 25
16, 17
High-to-low
22, 24, 26
16, 17
FIGURE
PAGE
circuit for measuring paralleled switching characteristics
PARAMETER
vs PARAMETER 2
Switching test circuits and application information
Input voltage vs output voltage
Time
27
17
Low-to-high
28, 30
18
High-to-low
29, 31
18
FIGURE
PAGE
Hex-1 to Hex-4 application information
PARAMETER
vs PARAMETER 2
Driving test circuit and application information
Drain-source voltage vs drain current
Drain-source voltage vs gate-source voltage at turn-on
Drain-source voltage vs gate-source voltage at turn-off
Time
Time
Time
32
19
Hex-1 size
33
20
Hex-2 size
36
20
Hex-3 size
39
21
Hex-4 size
41
22
Hex-4 size parallel drive
45
23
Hex-1 size
34
20
Hex-2 size
37
21
Hex-3 size
40
21
Hex-4 size
43
22
Hex-4 size parallel drive
46
23
Hex-1 size
35
20
Hex-2 size
38
21
Hex-3 size
42
22
Hex-4 size
44
22
Hex-4 size parallel drive
47
23
synchronous buck regulator application
FIGURE
PAGE
3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit
PARAMETER
vs PARAMETER 2
48
24
Q1 drain voltage vs gate voltage at turn-on
49
26
Q1 drain voltage vs gate voltage at turn-off
50
26
Q1 drain voltage vs Q2 gate-source voltage
51, 52, 53
26, 27
3A
54
27
5A
55
27
Time
Output ripple voltage vs inductor current
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9
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
TYPICAL CHARACTERISTICS
RISE TIME
vs
SUPPLY VOLTAGE
FALL TIME
vs
SUPPLY VOLTAGE
22
22
CL = 1 nF
20
20
18
18
t f − Fall Time − ns
t r − Rise Time − ns
CL = 1 nF
TA = 125°C
16
TA = 75°C
TA = 25°C
14
TA = −25°C
12
TA = 125°C
TA = 75°C
16
TA = 25°C
14
TA = − 50°C
10
10
5
6
7
8
9
11
10
12
13
14
5
6
VCC − Supply Voltage − V
7
8
10
11
12
13
14
Figure 5
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
SUPPLY VOLTAGE
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
SUPPLY VOLTAGE
45
45
CL = 1 nF
CL = 1 nF
40
40
t PLH − Propagation Delay Time,
Low-To-High-Level Output − ns
t PHL− Propagation Delay Time,
High-To-Low-Level Output − ns
9
VCC − Supply Voltage − V
Figure 4
35
30
TA = 125°C
25
T = 25°C
TA = 75°C A
20
TA = − 50°C
TA = −25°C
15
5
6
7
11
12
8
9
10
VCC − Supply Voltage − V
35
TA = 25°C
TA = 75°C
30
TA=125°C
25
TA = −25°C
20
TA = − 50°C
15
13
14
Figure 6
10
TA = − 50°C
TA = −25°C
12
5
6
7
8
9
10 11
12
VCC − Supply Voltage − V
Figure 7
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13
14
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
TYPICAL CHARACTERISTICS
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
SUPPLY CURRENT
vs
LOAD CAPACITANCE
16
2.5
12
1 MHz
10
8
6
500 kHz
100 kHz
4
40 kHz
I CC − Supply Current − mA
I CC − Supply Current − mA
VCC = 10 V
f = 100 kHz
TA = 25°C
Duty Cycle = 50%
CL = 1 nF
14
2
1.5
1
0.5
75 kHz
2
0
0
4
6
8
10
12
0
14
VCC − Supply Voltage − V
1.5
0.5
1
CL − Load Capacitance − nF
Figure 8
Figure 9
INPUT THRESHOLD VOLTAGE
vs
SUPPLY VOLTAGE
SUPPLY CURRENT
vs
AMBIENT TEMPERATURE
1.2
9
CL = 1 nF
VCC = 10 V
Duty Cycle = 50%
f = 100 kHz
I CC − Supply Current − mA
1.18
TA = 25°C
8
VIT − Input Threshold Voltage − V
1.19
1.17
1.16
1.15
1.14
1.13
1.12
1.11
1.1
−50
2
7
+ Threshold
6
5
− Threshold
4
3
2
1
0
−25
75
0
25
50
TA − Temperature − °C
100
125
Figure 10
4
6
12
8
10
VCC − Supply Voltage − V
14
Figure 11
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11
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
TYPICAL CHARACTERISTICS
REGULATOR OUTPUT VOLTAGE
vs
REGULATOR INPUT VOLTAGE
REGULATOR OUTPUT VOLTAGE
vs
REGULATOR INPUT VOLTAGE
14
13
13
11
TA = 125°C
TA = 25°C
10
9
8
7
6
11
TA = 125°C
10
9
8
7
6
5
5
4
8
12
16 20
24
28 32
Regulator Input Voltage − V
36
4
40
4
6
8
12
10
14
Regulator Input Voltage − V
Figure 12
Figure 13
REGULATOR QUIESCENT CURRENT
vs
REGULATOR INPUT VOLTAGE
PEAK SOURCE CURRENT
vs
SUPPLY VOLTAGE
50
2.5
RL = 0.5 Ω
f = 100 kHz
Duty Cycle = 5%
TA = 25°C
TA = − 55°C
45
2
40
TA = 25°C
35
Peak Source Current − A
Regulator Quiescent Current − µ A
TA = − 55°C
TA = − 55°C
12
4
TA = 25°C
12
Regulator Output Voltage − V
Regulator Output Voltage − V
RL = 10 kΩ
RL = 10 kΩ
30
TA = 125°C
25
20
15
1.5
1
.5
10
RL = 10 kΩ
5
0
0
4
8
12
16
20
24
28
32
36
40
Figure 14
12
4
6
8
10
VCC − Supply Voltage − V
Regulator Input Voltage − V
Figure 15
www.ti.com
12
14
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
TYPICAL CHARACTERISTICS
PEAK SINK CURRENT
vs
SUPPLY VOLTAGE
2.5
RL = 0.5 Ω
f = 100 kHz
Duty Cycle = 5%
TA = 25°C
Peak Sink Current − A
2
1.5
1
.5
0
4
6
12
8
10
VCC − Supply Voltage − V
14
Figure 16
SHOOT-THROUGH CURRENT
vs
INPUT VOLTAGE, LOW-TO-HIGH
SHOOT-THROUGH CURRENT
vs
INPUT VOLTAGE, HIGH-TO-LOW
6
6
VCC = 10 V
CL = 0
TA = 25°C
5
Shoot-Through Current − mA
Shoot-Through Current − mA
5
VCC = 10 V
CL = 0
TA = 25°C
4
3
2
1
4
3
2
1
0
0
10
8
6
4
2
0
VI − Input Voltage, High-to-Low − V
0
2
4
6
8
10
VI − Input Voltage, Low-to-High − V
Figure 18
Figure 17
www.ti.com
13
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
The TPS2811, TPS2812 and TPS2813 circuits each contain one regulator and two MOSFET drivers. The regulator
can be used to limit VCC to between 10 V and 13 V for a range of input voltages from 14 V to 40 V, while providing
up to 20 mA of dc drive. The TPS2814 and TPS2815 both contain two drivers, each of which has two inputs. The
TPS2811 has inverting drivers, the TPS2812 has noninverting drivers, and the TPS2813 has one inverting and one
noninverting driver. The TPS2814 is a dual 2-input AND driver with one inverting input on each driver, and the
TPS2815 is a dual 2-input NAND driver. These MOSFET drivers are capable of supplying up to 2.1 A or sinking up
to 1.9 A (see Figures 15 and 16) of instantaneous current to n-channel or p-channel MOSFETs. The TPS2811 family
of MOSFET drivers have very fast switching times combined with very short propagation delays. These features
enhance the operation of today’s high-frequency circuits.
The CMOS input circuit has a positive threshold of approximately 2/3 of VCC, with a negative threshold of 1/3 of VCC,
and a very high input impedance in the range of 109 Ω. Noise immunity is also very high because of the Schmidt trigger
switching. In addition, the design is such that the normal shoot-through current in CMOS (when the input is biased
halfway between VCC and ground) is limited to less than 6 mA. The limited shoot-through is evident in the graphs in
Figures 17 and 18. The input stage shown in the functional block diagram better illustrates the way the front end works.
The circuitry of the device is such that regardless of the rise and/or fall time of the input signal, the output signal will
always have a fast transition speed; this basically isolates the waveforms at the input from the output. Therefore, the
specified switching times are not affected by the slopes of the input waveforms.
The basic driver portion of the circuits operate over a supply voltage range of 4 V to 14 V with a maximum bias current
of 5 µA. Each driver consists of a CMOS input and a buffered output with a 2-A instantaneous drive capability. They
have propagation delays of less than 30 ns and rise and fall times of less than 20 ns each. Placing a 0.1-µF ceramic
capacitor between VCC and ground is recommended; this will supply the instantaneous current needed by the fast
switching and high current surges of the driver when it is driving a MOSFET.
The output circuit is also shown in the functional block diagram. This driver uses a unique combination of a bipolar
transistor in parallel with a MOSFET for the ability to swing from VCC to ground while providing 2 A of instantaneous
driver current. This unique parallel combination of bipolar and MOSFET output transistors provides the drive required
at VCC and ground to guarantee turn-off of even low-threshold MOSFETs. Typical bipolar-only output devices don’t
easily approach VCC or ground.
The regulator, included in the TPS2811, TPS2812 and TPS2813, has an input voltage range of 14 V to 40 V. It
produces an output voltage of 10 V to 13 V and is capable of supplying from 0 to 20 mA of output current. In grounded
source applications, this extends the overall circuit operation to 40 V by clamping the driver supply voltage (VCC) to
a safe level for both the driver and the MOSFET gate. The bias current for full operation is a maximum of 150 µA.
A 0.1-µF capacitor connected between the regulator output and ground is required to ensure stability. For transient
response, an additional 4.7-µF electrolytic capacitor on the output and a 0.1-µF ceramic capacitor on the input will
optimize the performance of this circuit. When the regulator is not in use, it can be left open at both the input and the
output, or the input can be shorted to the output and tied to either the VCC or the ground pin of the chip.
14
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SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
matching and paralleling connections
Figures 21 and 22 show the delays for the rise and fall time of each channel. As can be seen on a 5-ns scale, there
is very little difference between the two channels at no load. Figures 23 and 24 show the difference between the two
channels for a 1-nF load on each output. There is a slight delay on the rising edge, but little or no delay on the falling
edge. As an example of extreme overload, Figures 25 and 26 show the difference between the two channels, or two
drivers in the package, each driving a 10-nF load. As would be expected, the rise and fall times are significantly slowed
down. Figures 28 and 29 show the effect of paralleling the two channels and driving a 1-nF load. A noticeable
improvement is evident in the rise and fall times of the output waveforms. Finally, Figures 30 and 31 show the two
drivers being paralleled to drive the 10-nF load and as could be expected the waveforms are improved. In summary,
the paralleling of the two drivers in a package enhances the capability of the drivers to handle a larger load. Because
of manufacturing tolerances, it is not recommended to parallel drivers that are not in the same package.
TPS2811
1
50 Ω
Regulator
+
8
2
7
3
6
0.1 µF
VCC
4.7 µF
Output
1 nF
4
5
Figure 19. Test Circuit for Measuring Switching Characteristics
TPS2811
1
50 Ω
Regulator
+
8
2
7
3
6
4
5
0.1 µF
VCC
4.7 µF
Output 1
CL(1)
Output 2
CL(2)
NOTE A: Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.
Figure 20. Test Circuit for Measuring Switching Characteristics with the Inputs Connected in Parallel
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15
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
TA = 25°C
VI = 14 V
CL = 0
Paralleled Input
VO at 1OUT (5 V/div, 5 ns/div)
VO at 2OUT (5 V/div, 5 ns/div)
VO at 1OUT (5 V/div, 5 ns/div)
VO at 2OUT (5 V/div, 5 ns/div)
TA = 25°C
VI = 14 V
CL = 0
Paralleled Inputs
t − Time
t − Time
Figure 21. Voltage of 1OUT vs Voltage at
2OUT, Low-to-High Output Delay
Figure 22. Voltage at 1OUT vs Voltage
at 2OUT, High-to-Low Output Delay
TA = 25°C
VI = 14 V
CL = 1 nF on Each Output
Paralleled Input
VO at 1OUT (5 V/div, 10 ns/div)
VO at 2OUT
(5 V/div, 10 ns/div)
VO at 1OUT
(5 V/div, 10 ns/div)
VO at 2OUT (5 V/div, 10 ns/div)
TA = 25°C
VI = 14 V
CL = 1 nF Each Output
Paralleled Input
16
t − Time
t − Time
Figure 23. Voltage at 1OUT vs Voltage at
2OUT, Low-to-High Output Delay
Figure 24. Voltage at 1OUT vs Voltage at
2OUT, High-to-Low Output Delay
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SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
VO at 1OUT
(5 V/div, 20 ns/div)
VO at 2OUT
(5 V/div, 20 ns/div)
VO at (5 V/div, 20 ns/div)
VO at 2OUT (5 V/div, 20 ns/div)
TA = 25°C
VCC = 14 V
CL = 10 nF on Each Output
Paralleled Input
TA = 25°C
VCC = 14 V
CL = 10 nF on Each Output
Paralleled Input
t − Time
t − Time
Figure 25. Voltage at 1OUT vs Voltage at
2OUT, Low-to-High Output Delay
Figure 26. Voltage at 1OUT vs Voltage at
2OUT, High-to-Low Output Delay
TPS2811
1
50 Ω
Regulator
+
0.1 µF
8
2
7
3
6
VCC
4.7 µF
Output
CL
4
5
NOTE A: Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.
Figure 27. Test Circuit for Measuring Paralleled Switching Characteristics
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17
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
VI (5 V/div, 20 ns/div)
TA = 25°C
VCC = 14 V
CL = 1 nF
Paralleled Input
and Output
VI (5 V/div, 20 ns/div)
TA = 25°C
VCC = 14 V
CL = 1 nF
Paralleled Input
and Output
VO (5 V/div, 20 ns/div)
VO (5 V/div, 20 ns/div)
t − Time
t − Time
Figure 28. Input Voltage vs Output Voltage,
Low-to-High Propagation Delay of Paralleled
Drivers
Figure 29. Input Voltage vs Output Voltage,
High-to-Low Propagation Delay of Paralleled
Drivers
TA = 25°C
VCC = 14 V
CL = 10 nF
Paralleled Input
and Output
VI (5 V/div, 20 ns/div)
VI (5 V/div, 20 ns/div)
TA = 25°C
VCC = 14 V
CL = 10 nF
Paralleled Input
and Output
VO (5 V/div, 20 ns/div)
VO (5 V/div, 20 ns/div)
18
t − Time
t − Time
Figure 30. Input Voltage vs Output Voltage,
Low-to-High Propagation Delay of Paralleled
Drivers
Figure 31. Input Voltage vs Output Voltage,
High-to-Low Propagation Delay of Paralleled
Drivers
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SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
Figures 33 through 47 illustrate the performance of the TPS2811 driving MOSFETs with clamped inductive loads,
similar to what is encountered in discontinuous-mode flyback converters. The MOSFETs that were tested range in
size from Hex-1 to Hex-4, although the TPS28xx family is only recommended for Hex-3 or below.
The test circuit is shown in Figure 32. The layout rules observed in building the test circuit also apply to real
applications. Decoupling capacitor C1 is a 0.1-µF ceramic device, connected between VCC and GND of the TPS2811,
with short lead lengths. The connection between the driver output and the MOSFET gate, and between GND and
the MOSFET source, are as short as possible to minimize inductance. Ideally, GND of the driver is connected directly
to the MOSFET source. The tests were conducted with the pulse generator frequency set very low to eliminate the
need for heat sinking, and the duty cycle was set to turn off the MOSFET when the drain current reached 50% of its
rated value. The input voltage was adjusted to clamp the drain voltage at 80% of its rating.
As shown, the driver is capable of driving each of the Hex-1 through Hex-3 MOSFETs to switch in 20 ns or less. Even
the Hex-4 is turned on in less than 20 ns. Figures 45, 46 and 47 show that paralleling the two drivers in a package
enhances the gate waveforms and improves the switching speed of the MOSFET. Generally, one driver is capable
of driving up to a Hex-4 size. The TPS2811 family is even capable of driving large MOSFETs that have a low gate
charge.
VI
CR1
L1
Current
Loop
1
Regulator
8
Q1
R1
50 Ω
2
7
3
6
4
5
+
VDS
−
VDS
VGS
VCC
+
C1
0.1 µF
C2
4.7 µF
Figure 32. TPS2811 Driving Hex-1 through Hex-4 Devices
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19
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
TA = 25°C
VCC = 14 V
VI = 48 V
TA = 25°C
VCC = 14 V
VI = 48 V
VDS (20 V/div, 0.5 µs/div)
VDS (20 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
ID (0.5 A/div, 0.5 µs/div)
t − Time
t − Time
Figure 33. Drain-Source Voltage vs Drain
Current, TPS2811 Driving an IRFD014
(Hex-1 Size)
TA = 25°C
VCC = 14 V
VI = 48 V
Figure 34. Drain-Source Voltage vs
Gate-Source Voltage, at Turn-on,
TPS2811 Driving an IRFD014 (Hex-1 Size)
VDS (20 V/div, 50 ns/div)
VDS (50 V/div, 0.2 µs/div)
TA = 25°C
VCC = 14 V
VI = 80 V
VGS (5 V/div, 50 ns/div)
VGS (0.5 A/div, 0.2 µs/div)
20
t − Time
t − Time
Figure 35. Drain-Source Voltage vs
Gate-Source Voltage, at Turn-off,
TPS2811 Driving an IRFD014 (Hex-1 Size)
Figure 36. Drain-Source Voltage vs Drain
Current, TPS2811 Driving an IRFD120
(Hex-2 Size)
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SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
TA = 25°C
VCC = 14 V
VI = 80 V
TA = 25°C
VCC = 14 V
VI = 80 V
VDS (50 V/div, 50 ns/div)
VDS (50 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
t − Time
t − Time
Figure 37. Drain-Source Voltage vs
Gate-Source Voltage,
at Turn-on, TPS2811 Driving an IRFD120
(Hex-2 Size)
Figure 38. Drain-Source Voltage vs
Gate-Source Voltage,
at Turn-off, TPS2811 Driving an IRFD120
(Hex-2 Size)
TA = 25°C
VCC = 14 V
VI = 80 V
VDS (50 V/div, 50 ns/div)
VDS (50 V/div, 2 µs/div)
TA = 25°C
VCC = 14 V
VI = 80 V
VGS (5 A/div, 50 ns/div)
ID (5 A/div, 2 µs/div)
t − Time
t − Time
Figure 39. Drain-Source Voltage vs Drain
Current, TPS2811 Driving an IRF530
(Hex-3 Size)
Figure 40. Drain-Source Voltage vs
Gate-Source Voltage, at Turn-on, TPS2811
Driving an IRF530 (Hex-3 Size)
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21
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
VDS (50 V/div, 0.2 µs/div)
VDS (50 V/div, 50 ns/div)
TA = 25°C
VCC = 14 V
VI = 350 V
TA = 25°C
VCC = 14 V
VI = 80 V
ID (2 A/div,
0.2 µs/div)
VGS (5 V/div, 50 ns/div)
t − Time
t − Time
Figure 41. Drain-Source Voltage vs Drain
Current,
One Driver, TPS2811 Driving an IRF840
(Hex-4 Size)
Figure 42. Drain-Source Voltage vs
Gate-Source Voltage,
at Turn-off, TPS2811 Driving an IRF530
(Hex-3 Size)
VDS (50 V/div, 50 ns/div)
VDS (50 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
TA = 25°C
VCC = 14 V
VI = 350 V
22
TA = 25°C
VCC = 14 V
VI = 350 V
t − Time
t − Time
Figure 43. Drain-Source Voltage vs
Gate-Source Voltage, at Turn-on,
One Driver, TPS2811 Driving an IRF840
(Hex-4 Size)
Figure 44. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-off, One Driver,
TPS2811 Driving an IRF840
(Hex-4 Size)
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SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
VDS (50 V/div, 0.2 µs/div)
VDS (50 V/div,
50 ns/div)
TA = 25°C
VCC = 14 V
VI = 350 V
VGS (5 V/div,
50 ns/div)
ID (2 A/div,
0.2 µs/div)
TA = 25°C
VCC = 14 V
VI = 350 V
t − Time
t − Time
Figure 45. Drain-Source Voltage vs Drain
Current, Parallel Drivers,
TPS2811 Driving an IRF840 (Hex-4 Size)
Figure 46. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-on, Parallel Drivers,
TPS2811 Driving an IRF840 (Hex-4 Size)
VDS (50 V/div, 50 ns/div)
VGS (5 V/div, 50 ns/div)
TA = 25°C
VCC = 14 V
VI = 350 V
t − Time
Figure 47. Drain-Source Voltage vs Gate-Source Voltage, at Turn-off,
Parallel Drivers, TPS2811 Driving an IRF840 (Hex-4 Size)
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23
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
synchronous buck regulator
Figure 48 is the schematic for a 100-kHz synchronous-rectified buck converter implemented with a TL5001
pulse-width-modulation (PWM) controller and a TPS2812 driver. The bill of materials is provided in Table 1. The
converter operates over an input range from 5.5 V to 12 V and has a 3.3-V output capable of supplying 3 A
continuously and 5 A during load surges. The converter achieves an efficiency of 90.6% at 3 A and 87.6% at 5 A.
Figures 49 and 50 show the power switch switching performance. The output ripple voltage waveforms are
documented in Figures 54 and 55.
The TPS2812 drives both the power switch, Q2, and the synchronous rectifier, Q1. Large shoot-through currents,
caused by power switch and synchronous rectifier remaining on simultaneously during the transitions, are prevented
by small delays built into the drive signals, using CR2, CR3, R11, R12, and the input capacitance of the TPS2812.
These delays allow the power switch to turn off before the synchronous rectifier turns on and vice versa. Figure 51
shows the delay between the drain of Q2 and the gate of Q1; expanded views are provided in Figures 52 and 53.
Q1
IRF7406
L1
27 µF
3
1
J1
VI
1
VI
2
GND
3
GND
4
J2
C100
100 µF
16 V
+
C5
100 µF
16 V
+
C11
0.47 µF
+
R5
10 kΩ
2
1
CR1
30BQ015
2
3
4
REG_IN
1 IN
GND
REG_OUT
U2
TPS2812D
2 IN
1 OUT
VCC
2 OUT
C14
0.1 µF
8
C7
100 µF
16 V
C13
10 µF
10 V
3
6
5
Q2
IRF7201
R4
2.32 kΩ
1%
C6
1000 pF
R13
10 kΩ
R11
30 kΩ
3.3 V
3
GND
4
GND
C4
0.022 µF
R2
1.6 kΩ
C3
0.0022
µF
R6
15 Ω
C2
0.033 µF
1
2
3
OUT
VCC
COMP
4
FB
GND
8
RT
7
R9
90.9 kΩ
1%
R12
10 kΩ
R1
1.00 kΩ
1%
U1
TL5001CD
C15
1 µF
BAS16ZX
DTC
SCP
6
5
R8
121 kΩ
1%
C9
0.22 µF
+
C1
1 µF
Figure 48. 3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit
NOTE: If the parasitics of the external circuit cause the voltage to violate the Absolute Maximum
Rating for the Output pins, Schottky diodes should be added from ground to output and from output
to Vcc.
24
3.3 V
2
R3
180 Ω
BAS16ZX
CR3
1
7
R10
1 kΩ
CR2
+
R7
3.3 Ω
2
1
C12
100 µF
16 V
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SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
Table 1. Bill of Materials,
3.3-V, 3-A Synchronous-Rectified Buck Converter
REFERENCE
DESCRIPTION
VENDOR
U1
TL5001CD, PWM
Texas Instruments,
972-644-5580
U2
TPS2812D, N.I. MOSFET Driver
Texas Instruments,
972-644-5580
3 A, 15 V, Schottky, 30BQ015
International Rectifier,
310-322-3331
Signal Diode, BAS16ZX
Zetex,
516-543-7100
AVX,
800-448-9411
TDK,
708-803-6100
CR1
CR2,CR3
C1
1 µF, 16 V, Tantalum
C2
0.033 µF, 50 V
C3
0.0022 µF, 50 V
C4
0.022 µF, 50 V
C5,C7,C10,C12
100 µF, 16 V, Tantalum, TPSE107M016R0100
C6
1000 pF, 50 V
C9
0.22 µF, 50 V
C11
0.47 µF, 50 V, Z5U
C13
10 µF, 10 V, Ceramic, CC1210CY5V106Z
C14
0.1 µF, 50 V
C15
1.0 µF, 50 V
J1,J2
4-Pin Header
L1
27 µH, 3 A/5 A, SML5040
Nova Magnetics, Inc.,
972-272-8287
Q1
IRF7406, P-FET
International Rectifier,
310-322-3331
Q2
IRF7201, N-FET
International Rectifier,
310-322-3331
R1
1.00 kΩ, 1%
R2
1.6 kΩ
R3
180 Ω
R4
2.32 kΩ, 1 %
R5,R12,R13
10 kΩ
R6
15 Ω
R7
3.3 Ω
R8
121 kΩ, 1%
R9
90.9 kΩ, 1%
R10
1 kΩ
R11
30 kΩ
NOTES: 2. Unless otherwise specified, capacitors are X7R ceramics.
3. Unless otherwise specified, resistors are 5%, 1/10 W.
www.ti.com
25
SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
VD (5 V/div, 20 ns/div)
VG (2 V/div, 20 ns/div)
VD (5 V/div, 20 ns/div)
TA = 25°C
VI = 12 V
VO = 3.3 V at 5A
VG (2 V/div, 20 ns/div)
TA = 25°C
VI = 12 V
VO = 3.3 V at 5A
t − Time
t − Time
Figure 49. Q1 Drain Voltage vs Gate Voltage,
at Switch Turn-on
Figure 50. Q1 Drain Voltage vs Gate Voltage,
at Switch Turn-off
TA = 25°C
VI = 12 V
VO = 3.3 V at 5A
VD (5 V/div, 0.5 µs/div)
TA = 25°C
VI = 12 V
VO = 3.3 V at 5A
VD (5 V/div, 20 ns/div)
VGS (2 V/div, 0.5 µs/div)
26
VGS (2 V/div, 20 ns/div)
t − Time
t − Time
Figure 51. Q1 Drain Voltage vs Q2
Gate-Source Voltage
Figure 52. Q1 Drain Voltage vs Q2
Gate-Source Voltage
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SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004
APPLICATION INFORMATION
TA = 25°C
VI = 12 V
VO = 3.3 V at 5A
VD (5 V/div, 20 ns/div)
VGS (2 V/div, 20 ns/div)
t − Time
Figure 53. Q1 Drain Voltage vs Q2 Gate-Source Voltage
TA = 25°C
VI = 12 V
VO = 3.3 V at 3A
Inductor Current (1 A/div, 2 µs/div)
Inductor Current (2 A/div, 2 µs/div)
TA = 25°C
VI = 12 V
VO = 3.3 V at 5 A
1
1
Output Ripple Voltage (20 mV/div, 2 µs/div)
2
2
Output Ripple Voltage (20 mV/div, 2 µs/div)
t − Time
t − Time
Figure 54. Output Ripple Voltage vs
Inductor Current, at 3 A
Figure 55. Output Ripple Voltage vs
Inductor Current, at 5 A
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27
PACKAGE OPTION ADDENDUM
www.ti.com
24-Aug-2018
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TPS2811D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TPS2811DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TPS2811P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
TPS2811PW
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
PS2811
TPS2811PWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
PS2811
TPS2812D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TPS2812DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2812
TPS2812DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2812
TPS2812P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
TPS2812PWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TPS2813D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
2813
TPS2813DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
2813
TPS2813P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
-40 to 125
TPS2813P
TPS2813PWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
PS2813
TPS2814D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TPS2814DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
2814
TPS2814DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
2814
Addendum-Page 1
2811
-40 to 125
2811
TPS2811P
-40 to 125
2812
TPS2812P
PS2812
2814
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
24-Aug-2018
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TPS2814P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
TPS2814P
TPS2814PE4
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
TPS2814P
TPS2814PW
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TPS2814PWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TPS2815D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2815
TPS2815DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
2815
TPS2815DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TPS2815P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
TPS2815PWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
PS2814
-40 to 125
-40 to 125
PS2814
2815
TPS2815P
PS2815
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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