SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002
D Floating Bootstrap or Ground-Reference
D
D
D
D
D
D
D
D
D
D PACKAGE
(TOP VIEW)
High-Side Driver
Adaptive Dead-Time Control
50-ns Max Rise/Fall Times With 3.3-nF Load
2.4-A Typical Output Current
4.5-V to 15-V Supply Voltage Range
TTL-Compatible Inputs
Internal Schottky Bootstrap Diode
Low Supply Current....3 mA Typical
Ideal for High-Current Single or Multiphase
Power Supplies
− 40°C to 125°C Operating Virtual
Junction-Temperature Range
IN
PGND
DT
VCC
1
8
2
7
3
6
4
5
BOOT
HIGHDR
BOOTLO
LOWDR
description
The TPS2836 and TPS2837 are MOSFET drivers for synchronous-buck power stages. These devices are ideal
for designing a high-performance power supply using switching controllers that do not have MOSFET drivers.
The drivers are designed to deliver minimum 2-A peak currents into large capacitive loads. The high-side driver
can be configured as ground-reference or as floating-bootstrap. An adaptive dead-time control circuit eliminates
shoot-through currents through the main power FETs during switching transitions and provides high efficiency
for the buck regulator.
The TPS2836 has a noninverting input, while the TPS2837 has an inverting input. These drivers, available in
8-terminal SOIC packages, operate over a junction temperature range of − 40°C to 125°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
TJ
SOIC
(D)
TPS2836D
TPS2837D
− 40°C to 125°C
The D package is available taped and reeled. Add R
suffix to device type (e.g., TPS2836DR)
Related Synchronous MOS FET Drivers
DEVICE NAME
ADDITIONAL FEATURES
INPUTS
TPS2830
TPS2831
Noninverted
ENABLE, SYNC and CROWBAR
CMOS
W/O ENABLE, SYNC and CROWBAR
CMOS
ENABLE, SYNC and CROWBAR
TTL
TPS2832
TPS2833
Noninverted
TPS2834
TPS2835
Inverted
Inverted
Noninverted
Inverted
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2002, Texas Instruments Incorporated
!"#$%! & '("")% $& ! *(+,'$%! -$%).
"!-('%& '!!"# %! &*)''$%!& *)" %/) %)"#& ! )0$& &%"(#)%&
&%$-$"- 1$""$%2. "!-('%! *"!')&&3 -!)& !% )')&&$",2 ',(-)
%)&%3 ! $,, *$"$#)%)"&.
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1
SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002
functional block diagram
4
8
VCC
BOOT
1 MΩ
7
(TPS2836 Only)
HIGHDR
250 kΩ
6
BOOTLO
1
IN
VCC
(TPS2837 Only)
5
LOWDR
250 kΩ
2
3
PGND
DT
Terminal Functions
TERMINAL
NAME
NO.
I/O
DESCRIPTION
BOOT
8
I
Bootstrap terminal. A ceramic capacitor is connected between BOOT and BOOTLO to develop the floating
bootstrap voltage for the high-side MOSFET. The capacitor value is typically between 0.1 µF and 1 µF.
BOOTLO
6
O
This terminal connects to the junction of the high-side and low-side MOSFETs.
DT
3
I
Dead-time control terminal. Connect DT to the junction of the high-side and low-side MOSFETs
HIGHDR
7
O
Output drive for the high-side power MOSFET
IN
1
I
Input signal to the MOSFET drivers (noninverting input for the TPS2836; inverting input for the TPS2837).
LOWDR
5
O
Output drive for the low-side power MOSFET
PGND
2
VCC
4
2
Power ground. Connect to the FET power ground.
I
Input supply. Recommended that a 1 µF capacitor be connected from VCC to PGND.
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detailed description
low-side driver
The low-side driver is designed to drive low rDS(on) N-channel MOSFETs. The current rating of the driver is 2 A,
source and sink.
high-side driver
The high-side driver is designed to drive low rDS(on) N-channel MOSFETs. The current rating of the driver is 2 A,
source and sink. The high-side driver can be configured as a ground-reference driver or a floating bootstrap
driver. The internal bootstrap diode is a Schottky for improved drive efficiency. The maximum voltage that can
be applied between the BOOT terminal and ground is 30 V.
dead-time (DT) control
Dead-time control prevents shoot-through current from flowing through the main power FETs during switching
transitions by controlling the turnon times of the MOSFET drivers. The high-side driver is not allowed to turn
on until the gate drive voltage to the low-side FET is low, and the low-side driver is not allowed to turn on until
the voltage at the junction of the power FETs (Vdrain) is low; the TTL-compatible DT terminal connects to the
junction of the power FETs.
IN
The IN terminal is a TTL-compatible digital terminal that is the input control signal for the drivers. The TPS2836
has a noninverting input; the TPS2837 has an inverting input.
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Supply voltage range, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 16 V
Input voltage range: BOOT to PGND (high-side driver ON) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 30 V
BOOTLO to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 16 V
BOOT to BOOTLO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 16 V
IN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 16 V
DT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 30 V
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Unless otherwise specified, all voltages are with respect to PGND.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
D
600 mW
6.0 mW/°C
330 mW
240 mW
recommended operating conditions
MIN
NOM
MAX
UNIT
Supply voltage, VCC
4.5
15
V
Input voltage
4.5
28
V
BOOT to PGND
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3
SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002
electrical characteristics over recommended operating virtual junction temperature range,
VCC = 6.5 V, CL = 3.3 nF (unless otherwise noted)
supply current
PARAMETER
TEST CONDITIONS
Supply voltage range
TYP
4.5
Quiescent current
VCC
MIN
Quiescent current
Quiescent current
VCC =15 V,
VCC =15 V,
V(ENABLE) = LOW
V(ENABLE) = HIGH
VCC =12 V,
fSWX = 200 kHz,
CHIGHDR = 50 pF,
BOOTLO grounded,
CLOWDR = 50 pF,
See Note 2
MAX
15
100
300
400
3
UNIT
V
µA
A
mA
NOTE 2: Ensured by design, not production tested.
output drivers
PARAMETER
TEST CONDITIONS
MIN
TYP
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 5 V
VBOOT – VBOOTLO = 12 V, VHIGHDR = 10.5 V
0.7
1.1
1.1
1.5
2
2.4
High-side
source
(see Note 4)
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5V
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 1.5 V
VBOOT – VBOOTLO = 12 V, VHIGHDR = 1.5 V
1.2
1.4
1.3
1.6
2.3
2.7
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
VCC = 4.5 V,
VCC = 6.5 V,
VLOWDR = 4 V
VLOWDR = 5 V
1.3
1.8
Low-side sink
(see Note 4)
2
2.5
VCC = 12 V,
VCC = 4.5 V,
VLOWDR = 10.5 V
VLOWDR = 0.5V
VCC = 6.5 V,
VCC = 12 V,
VLOWDR = 1.5 V
VLOWDR = 1.5 V
High-side sink
(see Note 4)
Peak outputcurrent
Low-side
source
(see Note 4)
Duty cycle < 2%,
tpw < 100 µs
(see Note 3)
High-side sink (see Note 4)
High-side source (see Note 4)
Output
resistance
Low-side sink (see Note 4)
Low-side source (see Note 4)
3
3.5
1.4
1.7
2
2.4
2.5
3
MAX
A
A
A
A
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 0.5 V
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 0.5 V
VBOOT – VBOOTLO = 12 V, VHIGHDR = 0.5 V
5
VBOOT – VBOOTLO = 4.5 V, VHIGHDR = 4 V
VBOOT – VBOOTLO = 6.5 V, VHIGHDR = 6 V
VBOOT – VBOOTLO = 12 V, VHIGHDR =11.5 V
75
VDRV = 4.5 V,
VDRV = 6.5 V
VLOWDR = 0.5 V
VLOWDR = 0.5 V
VDRV = 12 V,
VDRV = 4.5 V,
VLOWDR = 0.5 V
VLOWDR = 4 V
VDRV = 6.5 V,
VDRV = 12 V,
VLOWDR = 6 V
VLOWDR = 11.5 V
UNIT
5
Ω
5
75
Ω
75
9
7.5
Ω
6
75
75
Ω
75
NOTES: 3. Ensured by design, not production tested.
4. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
4
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electrical characteristics over recommended operating virtual junction temperature range,
VCC = 6.5 V, CL = 3.3 nF (unless otherwise noted) (continued)
dead-time
PARAMETER
VIH
VIL
High-level input voltage
VIH
VIL
High-level input voltage
Low-level input voltage
Low-level input voltage
TEST CONDITIONS
LOWDR
Over the VCC range (see Note 3)
DT
Over the VCC range
MIN
TYP
MAX
UNIT
0.7VCC
V
1
V
2
V
1
V
NOTE 3: Ensured by design, not production tested.
digital control terminals (IN)
PARAMETER
VIH
VIL
TEST CONDITIONS
High-level input voltage
TYP
MAX
UNIT
2
Over the VCC range
Low-level input voltage
MIN
V
1
V
switching characteristics over recommended operating virtual junction temperature range,
CL = 3.3 nF (unless otherwise noted)
PARAMETER
TEST CONDITIONS
HIGHDR output (see Note 3)
Rise time
LOWDR output (see Note 3)
HIGHDR output (see Note 3)
Fall time
LOWDR output (see Note 3)
HIGHDR going low (excluding deadtime) (see Note 3)
Propagation delay time
LOWDR going high (excluding
dead-time) (see Note 3)
Propagation delay time
Driver nonoverlap time
NOTE 3:
LOWDR going low (excluding deadtime) (see Note 3)
DT to LOWDR and LOWDR to
HIGHDR (see Note 3)
MIN
TYP
MAX
VBOOT = 4.5 V,
VBOOT = 6.5 V,
VBOOTLO = 0 V
VBOOTLO = 0 V
60
VBOOT = 12 V,
VCC = 4.5 V
VBOOTLO = 0 V
50
50
UNIT
ns
40
VCC = 6.5 V
VCC = 12 V
30
ns
30
VBOOT = 4.5 V,
VBOOT = 6.5 V,
VBOOTLO = 0 V
VBOOTLO = 0 V
50
VBOOT = 12 V,
VCC = 4.5 V
VBOOTLO = 0 V
40
40
ns
40
VCC = 6.5 V
VCC = 12 V
30
ns
30
VBOOT = 4.5 V,
VBOOT = 6.5 V,
VBOOTLO = 0 V
VBOOTLO = 0 V
95
VBOOT = 12 V,
VBOOT = 4.5 V,
VBOOTLO = 0 V
VBOOTLO = 0 V
65
VBOOT = 6.5 V,
VBOOT = 12 V,
VBOOTLO = 0 V
VBOOTLO = 0 V
70
80
80
ns
60
VCC = 4.5 V
VCC = 6.5 V
80
VCC = 12 V
VCC = 4.5 V
60
VCC = 6.5 V
VCC = 12 V
ns
70
40
170
25
135
15
85
ns
ns
Ensured by design, not production tested.
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SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002
TYPICAL CHARACTERISTICS
FALL TIME
vs
SUPPLY VOLTAGE
RISE TIME
vs
SUPPLY VOLTAGE
50
50
CL = 3.3 nF
TJ = 25°C
45
40
40
t f − Fall Time − ns
t r − Rise Time − ns
CL = 3.3 nF
TJ = 25°C
45
High Side
35
30
Low Side
25
35
High Side
30
25
20
20
15
15
10
Low Side
10
4
5
6
7
9 10 11 12 13
8
VCC − Supply Voltage − V
14 15
4
5
6
Figure 1
VCC = 6.5 V
CL = 3.3 nF
45
11
12 13
14 15
VCC = 6.5 V
CL = 3.3 nF
40
t f − Fall Time − ns
High Side
t r − Rise Time − ns
10
50
40
35
30
Low Side
25
High Side
35
30
25
Low Side
20
20
15
15
−25
0
25
50
75
100
125
10
−50
−25
0
25
Figure 3
Figure 4
POST OFFICE BOX 655303
50
75
TJ − Junction Temperature − °C
TJ − Junction Temperature − °C
6
9
FALL TIME
vs
JUNCTION TEMPERATURE
50
10
−50
8
Figure 2
RISE TIME
vs
JUNCTION TEMPERATURE
45
7
VCC − Supply Voltage − V
• DALLAS, TEXAS 75265
100
125
SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002
TYPICAL CHARACTERISTICS
HIGH-TO-LOW PROPAGATION DELAY TIME
vs
SUPPLY VOLTAGE, HIGH TO LOW LEVEL
150
t PHL − High-to-Low Propagation Delay Time − ns
t PLH − Low-to-High Propagation Delay Time − ns
LOW-TO-HIGH PROPAGATION DELAY TIME
vs
SUPPLY VOLTAGE, LOW TO HIGH LEVEL
CL = 3.3 nF
TJ = 25°C
140
130
120
110
100
90
80
70
60
Low Side
50
40
30
20
4
5
6
7
9 10 11 12 13
8
VCC − Supply Voltage − V
14 15
150
CL = 3.3 nF
TJ = 25°C
140
130
120
110
100
90
80
70
High Side
60
50
40
Low Side
30
20
4
5
6
7
Figure 5
VCC = 6.5 V
CL = 3.3 nF
120
110
100
High Side
90
80
70
60
Low Side
50
40
30
20
−50
11
12 13
14 15
HIGH-TO-LOW PROPAGATION DELAY TIME
vs
JUNCTION TEMPERATURE
t PHL − High-to-Low Propagation Delay Time − ns
t PLH − Low-to-High Propagation Delay Time − ns
150
130
10
Figure 6
LOW-TO-HIGH PROPAGATION DELAY TIME
vs
JUNCTION TEMPERATURE
140
9
8
VCC − Supply Voltage − V
−25
25
75
0
50
100
TJ − Junction Temperature − °C
125
150
140
130
VCC = 6.5 V
CL = 3.3 nF
120
110
100
90
High Side
80
70
60
50
Low Side
40
30
20
−50
−25
0
25
50
75
100
125
TJ − Junction Temperature − °C
Figure 7
Figure 8
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7
SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002
TYPICAL CHARACTERISTICS
DRIVER-OUTPUT FALL TIME
vs
LOAD CAPACITANCE
DRIVER-OUTPUT RISE TIME
vs
LOAD CAPACITANCE
1000
1000
VCC = 6.5 V
TJ = 27°C
t f − Fall Time − ns
t r − Rise Time − ns
VCC = 6.5 V
TJ = 27°C
100
High Side
Low Side
10
1
0.01
1
0.1
10
100
High Side
Low Side
10
1
0.01
100
10
100
CL − Load Capacitance − nF
CL − Load Capacitance − nF
Figure 9
Figure 10
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
25
6000
TJ = 25°C
CL = 50 pF
5500
TJ = 25°C
CL = 50 pF
5000
20
4500
ICC − Supply Current − mA
ICC − Supply Current − µ A
1
0.1
500 kHz
4000
300 kHz
3500
200 kHz
3000
100 kHz
50 kHz
25 kHz
2500
2000
1500
1000
2 MHz
15
10
1 MHz
5
500
0
0
4
6
8
10
12
14
16
4
VCC − Supply Voltage − V
8
10
Figure 12
POST OFFICE BOX 655303
12
VCC − Supply Voltage − V
Figure 11
8
6
• DALLAS, TEXAS 75265
14
16
SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002
TYPICAL CHARACTERISTICS
PEAK SOURCE CURRENT
vs
SUPPLY VOLTAGE
PEAK SINK CURRENT
vs
SUPPLY VOLTAGE
4
4
TJ = 25°C
TJ = 25°C
3.5
3
3
Low Side
Peak Sink Current − A
Peak Source Current − A
3.5
2.5
2
High Side
1.5
Low Side
2.5
2
High Side
1.5
1
1
0.5
0.5
0
0
4
6
8
10
12
14
16
4
6
VCC − Supply Voltage − V
Figure 13
12
10
14
16
Figure 14
INPUT THRESHOLD VOLTAGE
vs
SUPPLY VOLTAGE
INPUT THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
2.0
2.0
TJ = 25°C
VCC = 6.5 V
V IT − Input Threshold Voltage − V
V IT − Input Threshold Voltage − V
8
VCC − Supply Voltage − V
1.8
1.6
1.4
1.2
1.0
4
6
8
10
12
14
16
1.8
1.6
1.4
1.2
1.0
−50
−25
0
25
50
75
100
125
TJ − Junction Temperature − °C
VCC − Supply Voltage − V
Figure 15
Figure 16
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9
SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002
APPLICATION INFORMATION
Figure 17 shows the circuit schematic of a 100-kHz synchronous-buck converter implemented with a TL5001A
pulse-width-modulation (PWM) controller and a TPS2837 driver. The converter operates over an input range from
4.5 V to 12 V and has a 3.3-V output. The circuit can supply 3 A continuous load and the transient load is 5 A. The
converter achieves an efficiency of 94% for VIN = 5 V, Iload=1 A, and 93% for VIN = 5 V, Iload = 3 A.
VIN
+
C10
100 µF
C5
100 µF
+
R1
1 kΩ
R6
1 MΩ
U1
TPS2837
1
IN
BOOT
2
PGND HIGHDR
3
BOOTLO
DT
4
LOWDR
VCC
8
C15
1.0 µF
7
C11
0.47 µF
R5
0Ω
Q1
Si4410
6
5
R7
3.3 Ω
R11
4.7 Ω
Q2
Si4410
C14
1 µF
GND
C9
0.22 µF
OUT
U2
TL5001A
2
C2
VCC
0.033 µF
R2
1.6 kΩ
3
COMP
FB
4
5 SCP
RT
7
C6
1000 pF
C4
0.022 µF
R3
180 Ω
R4
2.32 kΩ
GND
C1
1 µF
8
R9
90.9 kΩ
R10
1.0 kΩ
Figure 17. 3.3 V 3 A Synchronous-Buck Converter Circuit
10
3.3 V
C7
100 µF +
C12
100 µF +
C3
0.0022 µF
6 DTC
R8
121 kΩ
C13
10 µF
RTN
C8
0.1 µF
1
L1
27 µH
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APPLICATION INFORMATION
Great care should be taken when laying out the PC board. The power-processing section is the most critical
and will generate large amounts of EMI if not properly configured. The junction of Q1, Q2, and L1 should be very
tight. The connection from Q1 drain to the positive sides of C5, C10, and C11 and the connection from Q2 source
to the negative sides of C5, C10, and C11 should be as short as possible. The negative terminals of C7 and
C12 should also be connected to Q2 source.
Next, the traces from the MOSFET driver to the power switches should be considered. The BOOTLO signal from
the junction of Q1 and Q2 carries the large gate drive current pulses and should be as heavy as the gate drive
traces. The bypass capacitor (C14) should be tied directly across VCC and PGND.
The next most sensitive node is the FB node on the controller (terminal 4 on the TL5001A). This node is very
sensitive to noise pickup and should be isolated from the high-current power stage and be as short as possible.
The ground around the controller and low-level circuitry should be tied to the power ground as the output. If these
three areas are properly laid out, the rest of the circuit should not have other EMI problems and the power supply
will be relatively free of noise.
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SLVS224B − NOVEMBER 1999 − REVISED AUGUST 2002
MECHANICAL DATA
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
0.050 (1,27)
0.020 (0,51)
0.014 (0,35)
14
0.010 (0,25) M
8
0.008 (0,20) NOM
0.244 (6,20)
0.228 (5,80)
0.157 (4,00)
0.150 (3,81)
Gage Plane
0.010 (0,25)
1
7
0°−ā 8°
A
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.069 (1,75) MAX
0.010 (0,25)
0.004 (0,10)
PINS **
0.004 (0,10)
8
14
16
A MAX
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MIN
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
DIM
4040047 / D 10/96
NOTES: A.
B.
C.
D.
12
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
Falls within JEDEC MS-012
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS2836D
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2836
TPS2836DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2836
TPS2837D
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2837
TPS2837DR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2837
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of