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TPS2HB35-Q1
SLVSDZ4D – FEBRUARY 2018 – REVISED FEBRUARY 2020
TPS2HB35-Q1 40-V, 35-mΩ Dual-Channel Smart High-Side Switch
1 Features
3 Description
•
•
The TPS2HB35-Q1 device is a dual-channel smart
high-side switch intended for use in 12-V automotive
systems. The device integrates robust protection and
diagnostic features to ensure output port protection
even during harmful events like short circuits in
automotive systems. The device protects against
faults through a reliable current limit, which,
depending on device variant, is adjustable from 2 A to
25 A .
1
•
•
•
•
•
Qualified for automotive applications
AEC-Q100 qualified with the following results:
– Device temperature grade 1: TA = –40°C to
125°C ambient operating temperature range
– Device HBM ESD classification level 2
– Device CDM ESD classification level C4B
– Withstands 40-V load dump
Dual-channel smart high-side switch with 35-mΩ
RON (TJ = 25°C)
Improve system level reliability through adjustable
current limiting
– Current limit adjustable from 2 A to 25 A
Robust integrated output protection:
– Integrated thermal protection
– Protection against short to ground/battery
– Protection against reverse battery events
including automatic switch on with reverse
voltage
– Automatic shut off if loss of battery/ground
occurs
– Integrated output clamp to demagnetize
inductive loads
– Configurable fault handling
Analog sense output can be configured to
accurately measure:
– Load current
– Device temperature
Provides fault indication through SNS pin
– Detection of open load and short-to-battery
The high current limit range allows for usage in loads
that require large transient currents, while the low
current limit range provides improved protection for
loads that do not require high peak current. The
device is capable of reliably driving various load
profiles.
The TPS2HB35-Q1 also provides a high accuracy
analog current sense that allows for improved load
diagnostics. By reporting load current and device
temperature to a system MCU, the device enables
predictive maintenance and load diagnostics that
improves the system lifetime.
The TPS2HB35-Q1 is available in a HTSSOP
package which allows for reduced PCB footprint.
Device Information(1)
PART NUMBER
TPS2HB35-Q1
PACKAGE
HTSSOP (16)
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
VBAT /
Supply Voltage
DIA_EN
VBB
Bulbs
SEL1
2 Applications
•
•
•
•
•
•
•
Automotive display module
ADAS modules
Seat comfort module
Transmission control unit
HVAC control module
Body control modules
LED lighting
BODY SIZE (NOM)
5.00 mm × 4.40 mm
SEL2
SNS
µC
VOUT1
Relays/Motors
ILIM1
ILIM2
Power Module:
Cameras, Sensors
LATCH
EN1
VOUT2
EN2
GND
General Resistive,
Capacitive, Inductive Loads
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS2HB35-Q1
SLVSDZ4D – FEBRUARY 2018 – REVISED FEBRUARY 2020
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
1
1
1
2
3
4
6.1 Recommended Connections for Unused Pins .......... 5
7
Specifications......................................................... 6
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
8
9
Absolute Maximum Ratings ...................................... 6
ESD Ratings.............................................................. 6
Recommended Operating Conditions....................... 6
Thermal Information .................................................. 7
Electrical Characteristics........................................... 7
SNS Timing Characteristics .................................... 10
Switching Characteristics ........................................ 10
Typical Characteristics ............................................ 13
Parameter Measurement Information ................ 20
Detailed Description ............................................ 21
9.1 Overview ................................................................. 21
9.2 Functional Block Diagram ....................................... 22
9.3 Feature Description................................................. 23
9.4 Device Functional Modes........................................ 37
10 Application and Implementation........................ 39
10.1 Application Information.......................................... 39
10.2 Typical Application ............................................... 42
11 Power Supply Recommendations ..................... 47
12 Layout................................................................... 48
12.1 Layout Guidelines ................................................. 48
12.2 Layout Example .................................................... 48
13 Device and Documentation Support ................. 49
13.1
13.2
13.3
13.4
13.5
13.6
Documentation Support .......................................
Receiving Notification of Documentation Updates
Support Resources ...............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
49
49
49
49
49
49
14 Mechanical, Packaging, and Orderable
Information ........................................................... 49
4 Revision History
Changes from Revision C (November 2019) to Revision D
•
Added Versions A and B to the Electrical Characteristics table in the Specifications section ............................................... 6
Changes from Revision B (July 2019) to Revision C
•
2
Page
Added Device Version C to the Current Limit Characteristics in the Specifications Electrical Characteristics table ............. 6
Changes from Original (February 2018) to Revision A
•
Page
Changed from Advance Information to Production Data ....................................................................................................... 1
Changes from Revision A (April 2019) to Revision B
•
Page
Page
Changes made throughout the data sheet ............................................................................................................................ 1
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SLVSDZ4D – FEBRUARY 2018 – REVISED FEBRUARY 2020
5 Device Comparison Table
Table 1. TPS2HB35-Q1 Device Options
Device
Version
Part Number
Current Limit
Current Limit Range
Overcurrent Behavior
A
TPS2HB35AQPWPRQ1
Resistor Programmable
2 A - 10 A
Disable switch immediately
B
TPS2HB35BQPWPRQ1
Resistor Programmable
5.6 A - 25 A
Disable switch immediately
2.5 A - 6 A
Switch stays on until thermal
shutdown
C
TPS2HB35CQPWPRQ1
Resistor Programmable
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SLVSDZ4D – FEBRUARY 2018 – REVISED FEBRUARY 2020
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6 Pin Configuration and Functions
PWP Package (Version A/B/C)
16-Pin HTSSOP
Top View
GND
1
16
DIA_EN
SNS
2
15
SEL2
LATCH
3
14
SEL1
13
EN2
EN1
4
ILIM1
5
12
ILIM2
VOUT1
6
11
VOUT2
VOUT1
7
10
VOUT2
VOUT1
8
9
VOUT2
VBB
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
GND
—
Device ground
2
SNS
O
Sense output
3
LATCH
I
Sets fault handling behavior (latched or auto-retry)
4
EN1
I
Channel 1 control input, active high
5
ILIM1
O
Connect pull-up resistor to VBB to set current-limit threshold on CH1
6-8
VOUT1
O
Channel 1 output
9-11
VOUT2
O
Channel 2 output
12
ILIM2
O
Connect pull-up resistor to VBB to set current-limit threshold on CH2
13
EN2
I
Channel 2 control input, active high
14
SEL1
I
Diagnostics select 1
15
SEL2
I
Diagnostics select 2
16
DIA_EN
I
Diagnostic enable, active high
VBB
I
Power supply input
Exposed pad
4
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SLVSDZ4D – FEBRUARY 2018 – REVISED FEBRUARY 2020
6.1 Recommended Connections for Unused Pins
The TPS2HB35-Q1 device is designed to provide an enhanced set of diagnostic and protection features.
However, if the system design only allows for a limited number of I/O connections, some pins may be considered
optional.
Table 2. Connections for Optional Pins
PIN NAME
CONNECTION IF NOT USED
IMPACT IF NOT USED
SNS
Ground through 1-kΩ resistor
LATCH
Float or ground through
RPROT resistor
ILIM1, ILIM2
Float
SEL1
Float or ground through
RPROT resistor
SEL1 selects the TJ sensing feature. With SEL1 unused, only CH1 and
CH2 current sensing and open load detection are available.
SEL2
Ground through RPROT
resistor
With SEL2 = 0 V, CH2 current sensing and CH2 open load detection are
not available.
DIA_EN
Float or ground through
RPROT resistor
With DIA_EN unused, the analog sense, open-load, and short-to-battery
diagnostics are not available.
Analog sense is not available.
With LATCH unused, the device will auto-retry after a fault. If latched
behavior is desired, but the system describes limited I/O, it is possible to
use one microcontroller output to control the latch function of several highside channels.
If the ILIMx pin is left floating, the device will be set to the default internal
current-limit threshold.
RPROT is used to protect the pins from excess current flow during reverse battery conditions, for more information
see the section on Reverse Battery protection.
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7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
Maximum continuous supply voltage, VBB
Load dump voltage, VLD
ISO16750-2:2010(E)
Reverse battery voltage, VRev, t ≤ 3 minutes
UNIT
36
V
40
V
–18
V
Enable pin voltage, VEN1 and VEN2
–1
7
V
LATCH pin voltage, VLATCH
–1
7
V
Diagnostic Enable pin voltage, VDIA_EN
–1
7
V
Sense pin voltage, VSNS
–1
18
V
Select pin voltage, VSEL1 and VSEL2
–1
7
Reverse ground current, IGND
VBB < 0 V
Energy dissipation during turnoff, ETOFF
Energy dissipation during turnoff, ETOFF
mA
Single pulse, one channel, LOUT = 5 mH,
TJ,start = 125°C
42 (2)
mJ
Repetitive pulse, one channel, LOUT = 5 mH,
TJ,start = 125°C
20 (2)
mJ
150
°C
150
°C
Maximum junction temperature, TJ
Storage temperature, Tstg
(1)
(2)
V
–50
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
For further details, see the section regarding switch-off of an inductive load.
7.2 ESD Ratings
VALUE
V(ESD)
Electrostatic
discharge
Human-body model (HBM), per AEC Q100-002 (1)
Charged-device model (CDM), per AEC Q100-011
(1)
All pins except VBB and
VOUTx
±2000
VBB and VOUTx
±4000
All pins
±750
UNIT
V
AEC-Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specifications.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VBB
Nominal supply voltage
(1)
MIN
MAX
6
18
V
3
28
V
(1)
(2)
UNIT
VBB
Extended supply voltage
VEN1,
VEN2
Enable voltage
–1
5.5
V
VLATCH
LATCH voltage
–1
5.5
V
VDIA_EN
Diagnostic Enable voltage
–1
5.5
V
VSEL1,
VSEL2
Select voltage
–1
5.5
V
VSNS
Sense voltage
TA
Operating free-air temperature
(1)
(2)
6
–1
7
V
–40
125
°C
All operating voltage conditions are measured with respect to device GND
Device will function within extended operating range, however some parametric values might not apply
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7.4 Thermal Information
TPS2HB35-Q1
THERMAL METRIC (1) (2)
PWP (HTSSOP)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
32.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
30.8
°C/W
RθJB
Junction-to-board thermal resistance
9.0
°C/W
ψJT
Junction-to-top characterization parameter
1.8
°C/W
ψJB
Junction-to-board characterization parameter
9.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2.0
°C/W
(1)
(2)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
The thermal parameters are based on a 4-layer PCB according to the JESD51-5 and JESD51-7 standards.
7.5 Electrical Characteristics
VBB = 6 V to 18 V, TJ = -40°C to 150°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT VOLTAGE AND CURRENT
VDSCLAMP
VDS clamp voltage
40
46
V
VBBCLAMP
VBB clamp voltage
58
76
V
VUVLOF
VBB undervoltage lockout
falling
Measured with respect to the GND pin of the device
2.0
3
V
VUVLOR
VBB undervoltage lockout
rising
Measured with respect to the GND pin of the device
2.2
3
V
VBB = 13.5 V, TJ = 25°C
VENx = VDIA_EN = 0 V, VOUT = 0 V
0.5
µA
ISB
Standby current (total
device leakage including
both MOSFET channels)
VBB = 13.5 V, TJ = 125°C,
VENx = VDIA_EN = 0 V, VOUT = 0 V
4
µA
ILNOM
IOUT(standby)
Continuous load current,
per channel
Output leakage current
(per channel)
Two channels enabled, TAMB = 70°C
One channel enabled, TAMB = 70°C
VBB = 13.5 V, TJ = 25°C
VENx = VDIA_EN = 0 V, VOUT = 0 V
3.5
A
5
A
0.01
VBB = 13.5 V, TJ = 125°C
VENx = VDIA_EN = 0 V, VOUT = 0 V
0.5
µA
1.5
µA
IDIA
Current consumption in
diagnostic mode
VBB = 13.5 V, ISNS = 0 mA
VENx = 0 V, VDIA_EN = 5 V, VOUT = 0V
3
6
mA
IQ
Quiescent current
VBB = 13.5 V
VENx = VDIA_EN = 5 V, IOUTx = 0 A
3
6
mA
tSTBY
Standby mode delay time VENx = VDIA_EN = 0 V to standby
17
22
ms
12
RON CHARACTERISTICS
RON
RON(REV)
On-resistance
(Includes MOSFET and
package)
TJ = 25°C, 6 V ≤ VBB ≤ 28 V, IOUT1 = IOUT2 > 1 A
On-resistance during
reverse polarity
TJ = 25°C, -18 V ≤ VBB ≤ -8 V
35
mΩ
TJ = 150°C, 6 V ≤ VBB ≤ 28 V, IOUT1 = IOUT2 > 1 A
75
mΩ
TJ = 25°C, 3 V ≤ VBB ≤ 6 V, IOUT1 = IOUT2 > 1 A
70
mΩ
45
TJ = 105°C, -18 V ≤ VBB ≤ -8 V
mΩ
70
mΩ
CURRENT SENSE CHARACTERISTICS
KSNS
Current sense ratio
IOUTx / ISNS
IOUTX = 1 A
2000
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Electrical Characteristics (continued)
VBB = 6 V to 18 V, TJ = -40°C to 150°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IOUT = 3 A
IOUT = 1 A
Current sense current
and accuracy
ISNSI
VEN = VDIA_EN = 5 V,
VSEL1 = 0 V, VSEL2 = X
IOUT = 300 mA
IOUT = 100 mA
IOUT = 50 mA
ISNSI
ISNSI
Current sense current
and accuracy
VEN = VDIA_EN = 5 V,
VSEL1 = 0 V, VSEL2 = X
Current sense current
and accuracy
VEN = VDIA_EN = 5 V,
VSEL1 = 0 V, VSEL2 = X
MIN
TYP
MAX
1.5
–5
mA
5
0.5
–5
5
6
%
mA
7
0.025
-13
%
mA
0.05
-7
%
mA
0.150
-6
UNIT
%
mA
13
0.00894
%
mA
IOUT = 20 mA
-35
35
%
TJ SENSE CHARACTERISTICS
Temperature sense
current
Device Version A/B/C
ISNST
dISNST/dT
VDIA_EN = 5 V, VSEL1 = 5
V, VSEL2 = 0 V
TJ = -40°C
0.00
0.12
0.29
mA
TJ = 25°C
0.68
0.85
1.02
mA
TJ = 85°C
1.25
1.52
1.79
mA
TJ = 125°C
1.61
1.96
2.31
mA
TJ = 150°C
1.80
2.25
2.70
mA
Coefficient
0.011
mA/°C
SNS CHARACTERISTICS
ISNSFH
ISNS fault high-level
VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = X
ISNSleak
ISNS leakage
VDIA_EN = 0 V
4
4.5
5.3
mA
1
µA
CURRENT LIMIT CHARACTERISTICS
RILIM = 8.25 kΩ
ICL,max
Current Limit Max
Device Version C, TJ =
-40°C to 150°C
Device Version C, TJ =
-40°C to 150°C
13
A
RILIM = 10 kΩ
12.5
A
RILIM = 15 kΩ
11.5
A
RILIM = 25 kΩ
9
A
14
A
RILIM = GND, open, or
out of range
RILIM = 8.25 kΩ
RILIM = 25 kΩ
ICL
Current Limit Threshold
Device Version A, TJ =
-40°C to 150°C
Device Version B, TJ =
-40°C to 150°C
KCL
Current Limit Ratio
4.4
6
8.4
A
1.52
2.5
3.48
A
RILIM = GND, open, or
out of range
14
A
RILIM = 5 kΩ
7.8
10
12.5
A
RILIM = 25 kΩ
1.8
2
2.5
A
RILIM = GND, open, or
out of range
36
A
RILIM = 5 kΩ
18.5
25
30
A
RILIM = 25 kΩ
4.6
5.6
7.5
A
Version A/C
Version B
50
A * kΩ
140
A * kΩ
FAULT CHARACTERISTICS
VOL
8
Open-load (OL) detection
VENx = 0 V, VDIA_EN = 5 V
voltage
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3
4
V
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Electrical Characteristics (continued)
VBB = 6 V to 18 V, TJ = -40°C to 150°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tOL1
OL and STB indicationtime from ENx falling
VENx = 5 V to 0 V, VDIA_EN = 5 V, VSEL1 = 0 V
IOUT = 0 mA, VOUTx = 4 V
tOL2
OL and STB indicationtime from DIA_EN rising
VENx = 0 V, VDIA_EN = 0 V to 5 V, VSEL1 = 0 V (1)
IOUT = 0 mA, VOUTx = 4 V
VENx = 0 V, VDIA_EN = 5 V, VSEL1 = 0 V
IOUT = 0 mA, VOUTx = 0 V to 4 V
MIN
TYP
MAX
UNIT
300
500
700
µs
50
µs
50
µs
(1)
(1)
tOL3
OL and STB indicationtime from VOUT rising
TABS
Thermal shutdown
TREL
Relative thermal
shutdown
For Version A/B only
TREL
Relative thermal
shutdown
For Version C only
THYS
Thermal shutdown
hysteresis
tFAULT
Fault shutdown
indication-time
VDIA_EN = 5 V
Time between switch shutdown and ISNS settling at
ISNSFH
tRETRY
Retry time
Time from fault shutdown until switch re-enable
(thermal shutdown or current limit).
150
For Version C only
1
°C
60
°C
80
°C
28
°C
2
50
µs
3
ms
EN1 AND EN2 PIN CHARACTERISTICS (2)
VIL, ENx
Input voltage low-level
No GND network diode
VIH,
Input voltage high-level
No GND network diode
ENx
VIHYS,
ENx
Input voltage hysteresis
Internal pulldown resistor
IIL, EN
Input current low-level
VEN = 0.8 V
IIH,
Input current high-level
VEN = 5 V
DIA_EN PIN CHARACTERISTICS
0.5
Input voltage low-level
No GND network diode
VIH,
Input voltage high-level
No GND network diode
VIHYS,
1
mV
2
MΩ
0.8
µA
5
µA
(2)
VIL, DIA_EN
DIA_EN
V
V
350
RENx
EN
0.8
2
0.8
2.0
V
V
Input voltage hysteresis
200
350
530
mV
RDIA_EN
Internal pulldown resistor
0.5
1
2
MΩ
IIL, DIA_EN
Input current low-level
VDIA_EN = 0.8 V
0.8
µA
IIH,
Input current high-level
VDIA_EN = 5 V
5.0
µA
DIA_EN
DIA_EN
SEL1 AND SEL2 PIN Characteristics
VIL, SELx
Input voltage low-level
No GND network diode
VIH,
Input voltage high-level
No GND network diode
SELx
VIHYS,
SELx
2
Input voltage hysteresis
Internal pulldown resistor
0.5
IIL, SELX
Input current low-level
VSELX = 0.8 V
IIH,
Input current high-level
VSELX = 5 V
V
V
350
RSELx
SELX
0.8
1
mV
2
MΩ
0.8
µA
5
µA
LATCH PIN CHARACTERISTICS (2)
VIL, LATCH
Input voltage low-level
No GND network diode
VIH, LATCH
Input voltage high-level
No GND network diode
VIHYS,
Input voltage hysteresis
0.8
2.0
200
V
V
350
530
mV
1
2
MΩ
LATCH
RLATCH
Internal pulldown resistor
IIL, LATCH
Input current low-level
(1)
(2)
0.5
VLATCH = 0.8 V
0.8
µA
SELx must be set to select the relevant channel. Diagnostics are performed on Channel 1 when SELx = 00 and diagnostics are
performed on channel 2 when SELx = 01
VBB = 3 V to 28 V
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Electrical Characteristics (continued)
VBB = 6 V to 18 V, TJ = -40°C to 150°C (unless otherwise noted)
PARAMETER
IIH,
LATCH
Input current high-level
TEST CONDITIONS
MIN
TYP
VLATCH = 5 V
MAX
5
UNIT
µA
7.6 SNS Timing Characteristics
VBB = 6 V to 18 V, TJ = -40°C to +150°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SNS TIMING - CURRENT SENSE
tSNSION1
Settling time from rising edge of DIA_EN
VENx = 5 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ, RL ≤ 5 Ω
tSNSION2
Settling time from rising edge of ENx and
DIA_EN
tSNSION3
40
µs
VENx = VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ, RL ≤ 5 Ω
165
µs
Settling time from rising edge of ENx
VENx = 0 V to 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, RL ≤ 5 Ω
165
µs
tSNSIOFF1
Settling time from falling edge of DIA_EN
VENx = 5 V, VDIA_EN = 5 V to 0 V
RSNS = 1 kΩ, RL ≤ 5 Ω
20
µs
tSETTLEH
Settling time from rising edge of load step
VEN1 = 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, IOUT = 5 A to 1 A
20
µs
tSETTLEL
Settling time from falling edge of load step
VENx = 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, IOUT = 5 A to 1 A
20
µs
SNS TIMING - TEMPERATURE SENSE
tSNSTON1
Settling time from rising edge of DIA_EN
VENx = 5 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ
40
µs
tSNSTON2
Settling time from rising edge of DIA_EN
VENx = 0 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ
70
µs
tSNSTOFF
Settling time from falling edge of DIA_EN
VENx = X, VDIA_EN = 5 V to 0 V
RSNS = 1 kΩ
20
µs
VENx = X, VDIA_EN = 5 V
VSEL1 = 5 V to 0 V, VSEL2 = X
RSNS = 1 kΩ, RL ≤ 5 Ω
60
µs
20
µs
60
µs
SNS TIMING - MULTIPLEXER
Settling time from temperature sense to
current sense
tMUX
VENx = X, VDIA_EN = 5 V
Settling time from current sense on CHx to
VSEL1 = 0 V, VSEL2 = 0 V to 5 V
CHy
RSNS = 1 kΩ, IOUT1 = 2 A, IOUT2 = 4 A
Settling time from current sense to
temperature sense
VENx = X, VDIA_EN = 5 V
VSEL1 = 0 V to 5 V, VSEL2 = X
RSNS = 1 kΩ, RL ≤ 5 Ω
7.7 Switching Characteristics
VBB = 13.5 V, TJ = -40°C to +150°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
20
60
100
µs
tDR
Turnon delay time
VBB = 13.5 V, RL ≤ 5 Ω, 50% EN
rising to 10% VOUT rising
tDF
Turnoff delay time
VBB = 13.5 V, RL ≤ 5 Ω, 50% EN
falling to 90% VOUT Falling
20
60
100
µs
SRR
VOUTx rising slew rate
VBB = 13.5 V, 20% to 80% of VOUT,
RL ≤ 5 Ω
0.1
0.4
0.7
V/µs
SRF
VOUTx falling slew rate
VBB = 13.5 V, 80% to 20% of VOUT,
RL ≤ 5 Ω
0.1
0.4
0.7
V/µs
tON
Turnon time
VBB = 13.5 V, RL ≤ 5 Ω, 50% EN
rising to 80% VOUT rising
39
87
145
µs
tOFF
Turnoff time
VBB = 13.5 V, RL ≤ 5 Ω, 50% EN
rising to 80% VOUT rising
39
87
147
µs
10
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Switching Characteristics (continued)
VBB = 13.5 V, TJ = -40°C to +150°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
–50
0
50
UNIT
tON - tOFF
Turnon and turnoff matching
200-µs enable pulse
EON
Switching energy losses during
turnon
µs
VBB = 13.5 V, RL ≤ 5 Ω
0.6
mJ
EOFF
Switching energy losses during
turnoff
VBB = 13.5 V, RL ≤ 5 Ω
0.6
mJ
VEN(1)
50%
50%
90%
90%
tDR
tDF
VOUT
10%
10%
tON
tOFF
Rise and fall time of VENx is 100 ns.
Figure 1. Switching Characteristics Definitions
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VEN1
VDIA_EN
IOUT1
ISNS
tSNSION1
tSNSION2
tSETTLEH
tSETTLEL
tSNSTON1
tSNSTON2
tSNSION3
tSNSIOFF1
VEN1
VDIA_EN
IOUT1
ISNS
VEN1
VDIA_EN
TJ
ISNS
tSNSTOFF
NOTE1: Rise and fall times of control signals are 100 ns. Control signals include: EN1, EN2, DIA_EN, SEL1, SEL2.
NOTE2: SEL1 and SEL2 must be set to the appropriate values.
Figure 2. SNS Timing Characteristics Definitions
12
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7.8 Typical Characteristics
40
35
35
30
30
25
RTJA
RTJA
25
20
20
15
15
10
10
5
5
0
1E-6 1E-5 0.0001
0.01 0.1
Seconds (s)
1 2 510
100
0
1E-6 1E-5 0.0001
1000
110
105
100
95
90
85
80
75
70
65
60
55
50
45
40
1 2 510
100
1000
Figure 4. Transient Thermal Impedance Both Channels
Enabled
4.5
6V
8V
13.5 V
18 V
4
3.5
3
ISB (PA)
RTJA
Figure 3. Transient Thermal Impedance 1 Channel Enabled
0.01 0.1
Seconds (s)
2.5
2
1.5
1
0.5
0
50 100 150 200 250 300 350 400 450 500 550 600
Copper Area (mm2)
0
-40
-20
0
VOUTX = 0 V
Figure 5. RθJA vs Copper Area
20
40
60
80 100
Temperature (qC)
VENX = 0 V
120
140
160
VDIAG_EN = 0 V
Figure 6. Standby Current (ISB) vs Temperature
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Typical Characteristics (continued)
5.05
0.2
6V
8V
13.5 V
18 V
0.18
0.14
4.85
4.75
0.12
IQ (mA)
IOUT(STANDBY) (PA)
0.16
6V
8V
13.5 V
18 V
4.95
0.1
0.08
0.06
4.65
4.55
4.45
0.04
4.35
0.02
4.25
0
-0.02
-40
-20
0
20
VOUTX = 0 V
Both Channels
40
60
80
Temperature (qC)
VENX = 0 V
100
120
140
4.15
-40
VDIAG_EN = 0 V
40
60
80 100
Temperature (qC)
VENX = 5 V
VSEL1 = VSEL2 = 0 V
120
140
160
VDIAG_EN = 5 V
60
6V
8V
13.5 V
18 V
57
54
51
45
48
42
RON (m:)
RON (m:)
20
Figure 8. Quiescent Current (IQ) vs Temperature
54
48
0
IOUTX = 0 A
RSNS = 1 kΩ
Figure 7. Output Leakage Current (IOUT(standby)) vs
Temperature
51
-20
39
36
45
42
39
36
33
33
30
30
27
24
-40
-20
0
IOUTX = 200 mA
RSNS = 1 kΩ
20
40
60
80
Temperature (qC)
VENX = 5 V
100
120
140
VDIAG_EN = 0 V
Figure 9. On Resistance (RON) vs Temperature
14
-40qC
25qC
27
24
2.5
5
7.5
IOUTX = 200 mA
RSNS = 1 kΩ
65qC
85qC
105qC
125qC
10 12.5 15 17.5 20 22.5 25 27.5 30
VBB (V)
VENX = 5 V
VDIAG_EN = 0 V
Figure 10. On Resistance (RON) vs VBB
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Typical Characteristics (continued)
70
60
6V
8V
13.5 V
18 V
55
tDF (Ps)
tDR (Ps)
60
50
40
50
45
30
-40
-20
0
ROUTX = 2.6 Ω
RSNS = 1 kΩ
20
40
60
80
Temperature (qC)
VENX = 0 V to 5 V
VBB = 13.5 V
100
120
40
-40
140
VDIAG_EN = 0 V
Both Channels
0
20
40
60
80
Temperature (qC)
VENX = 5 V to 0 V
VBB = 13.5 V
100
120
140
VDIAG_EN = 0 V
Both Channels
Figure 12. Turn-off Delay Time (tDF) vs Temperature
0.5
0.5
6V
8V
13.5 V
18 V
0.3
0.2
0.1
6V
8V
13.5 V
18 V
0.4
SRF (V/Ps)
0.4
0
-40
-20
ROUTX = 2.6 Ω
RSNS = 1 kΩ
Figure 11. Turn-on Delay Time (tDR) vs Temperature
SRR (V/Ps)
6V
8V
13.5 V
18 V
0.3
0.2
0.1
-20
0
ROUTX = 2.6 Ω
RSNS = 1 kΩ
20
40
60
80 100
Temperature (qC)
VENX = 0 V to 5 V
VBB = 13.5 V
120
140
160
VDIAG_EN = 0 V
Both Channels
Figure 13. VOUT Slew Rate Rising (SRR) vs Temperature
0
-40
-20
0
ROUTX = 2.6 Ω
RSNS = 1 kΩ
20
40
60
80
Temperature (qC)
VENX = 5 V to 0 V
VBB = 13.5 V
100
120
140
VDIAG_EN = 0 V
Both Channels
Figure 14. VOUT Slew Rate Falling (SRF) vs Temperature
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Typical Characteristics (continued)
87.5
102
6V
8V
13.5 V
18 V
85
82.5
96
93
80
90
77.5
TOFF (Ps)
TON (Ps)
6V
8V
13.5 V
18 V
99
75
72.5
87
84
81
70
78
67.5
75
65
72
62.5
-40
-20
0
ROUTX = 2.6 Ω
RSNS = 1 kΩ
20
40
60
80
Temperature
100
VENX = 0 V to 5 V
VBB = 13.5 V
120
140
69
-40
160
VDIAG_EN = 0 V
Both Channels
20
40
60
80 100
Temperature (qC)
VENX = 5 V to 0 V
VBB = 13.5 V
120
140
160
VDIAG_EN = 0 V
Both Channels
Figure 16. Turn-off Time (tOFF) vs Temperature
1.6
1.6
-40qC
25qC
65qC
1.4
85qC
105qC
125qC
6V
8V
13.5 V
18 V
1.4
1.2
1.2
1
1
ISNSI (mA)
ISNSI (mA)
0
ROUTX = 2.6 Ω
RSNS = 1 kΩ
Figure 15. Turn-on Time (tON) vs Temperature
0.8
0.6
0.8
0.6
0.4
0.4
0.2
0.2
0
0
0
0.3
0.6
VSEL1 = VSEL2 = 0 V
RSNS = 1 kΩ
0.9
1.2
1.5 1.8
IOUT (A)
VENX = 5 V
VBB = 13.5 V
2.1
2.4
2.7
3
VDIAG_EN = 5 V
Figure 17. Current Sense Output Current (ISNSI ) vs Load
Current (IOUT) Across Temperature
16
-20
0
0.3
0.6
VSEL1 = VSEL2 = 0 V
RSNS = 1 kΩ
0.9
1.2
1.5 1.8
IOUT (A)
VENX = 5 V
TA = 25°C
2.1
2.4
2.7
3
VDIAG_EN = 5 V
Figure 18. Current Sense Output Current (ISNSI) vs Load
Current (IOUT) Across VBB
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Typical Characteristics (continued)
5.5
2.2
6V
8V
13.5 V
18 V
2
1.8
6V
8V
13.5 V
18 V
5
ISNSFH (mA)
ISNST (mA)
1.6
1.4
1.2
1
4.5
0.8
4
0.6
0.4
0.2
-40
-20
0
20
40
60
80
Temperature (qC)
VSEL1 = 5 V
RSNS = 1 kΩ
VSEL2 = 0 V
VENX = 0 V
100
120
3.5
-40
140
VDIAG_EN = 5 V
20
40
60
80
Temperature (qC)
VENX = 0 V
VOUTX Floating
100
120
140
VDIAG_EN = 5 V
Both Channels
Figure 20. Fault High Output Current (ISNSFH) vs
Temperature
1.9
6V
8V
13.5 V
18 V
1.85
1.8
VIH (V)
VIL (V)
0
VSEL1 = VSEL2 = 0 V
RSNS = 500 Ω
Figure 19. Temperature Sense Output Current (ISNST) vs
Temperature
1.7
1.68
1.66
1.64
1.62
1.6
1.58
1.56
1.54
1.52
1.5
1.48
1.46
1.44
1.42
1.4
1.38
-40
-20
1.75
1.7
6V
8V
13.5 V
18 V
1.65
-20
0
VENX = 3.3 V to 0 V
ROUTX = 1 kΩ
20
40
60
80
Temperature (qC)
VOUTX = 0 V
100
120
140
VDIAG_EN = 0 V
1.6
-40
-20
0
VENX = 0 V to 3.3 V
ROUTX = 1 kΩ
Figure 21. VIL vs Temperature
20
40
60
80
Temperature (qC)
VOUTX = 0 V
100
120
VDIAG_EN = 0 V
Figure 22. VIH vs Temperature
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Typical Characteristics (continued)
450
1.2
6V
8V
13.5 V
18 V
425
400
1.1
1.05
1
350
IIL (PA)
VIHYST (mV)
375
325
300
0.95
0.9
0.85
275
0.8
250
0.75
225
200
-40
6V
8V
13.5 V
18 V
1.15
0.7
-20
0
20
VENX = 0 V to 3.3 V
and 3.3 V to 0 V
ROUTX = 1 kΩ
40
60
80
Temperature (qC)
100
VOUTX = 0 V
120
140
VDIAG_EN = 0 V
0.65
-40
-20
0
VENX = 0.8 V
ROUTX = 1 kΩ
Figure 23. VIHYS vs Temperature
20
40
60
80
Temperature (qC)
100
VOUTX = 0 V
120
140
VDIAG_EN = 0 V
Figure 24. IIL vs Temperature
7.5
7
IIH (PA)
6.5
6V
8V
13.5 V
18 V
6
5.5
5
4.5
4
-40
-20
0
VENX = 5 V
ROUTX = 1 kΩ
20
40
60
80
Temperature (qC)
100
VOUTX = 0 V
120
140
VDIAG_EN = 0 V
ROUT1 = 5 Ω
VSEL1 = VSEL2 = 0 V
RSNS = 1 kΩ
VDIA_EN = 5 V
Figure 27. Turn-off Time (tOFF)
18
VDIA_EN = 5 V
Figure 26. Turn-on Time (tON)
Figure 25. IIH vs Temperature
ROUT1 = 5 Ω
VSEL1 = VSEL2 = 0 V
RSNS = 1 kΩ
ROUT1 = 2.6 Ω
IOUT1 = 1 A to 5 A
RSNS = 1 kΩ
VBB = 13.5 V
VSEL1 = VSEL2 = 0 V
Figure 28. ISNS Settling time (tSNSION1) on Load Step
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Typical Characteristics (continued)
VBB = 13.5 V
VEN = 0 V to 5 V
TA = 25°C
ROUT1 = 5 Ω
Figure 29. SNS Output Current Measurement Enable on
DIAG_EN PWM
LOUT = 5 µH to
GND
VEN = 0 V to 5 V
RSNS = 1 kΩ
VSEL1 = VSEL2 = 0 V
VDIAG_EN = 5 V
TA = 25°C
Figure 31. Device Version B Short Circuit Event
RSNS = 1 kΩ
VSEL1 = VSEL2 = 0 V
VDIAG_EN = 5 V
TA = 25°C
Figure 30. Device Version A Short Circuit Event
LOUT = 5 µH to
GND
VEN = 0 V to 5 V
RSNS = 1 kΩ
VSEL1 = VSEL2 = 0 V
VDIAG_EN = 5 V
TA = 25°C
Figure 32. Device Version C Short Circuit Event
16
12.5
8
10
0
7.5
-8
5
-16
2.5
-24
0
-2.5
-0.0005
0.00025
VBB = 13.5 V
0.001
0.00175
Time (s)
0.0025
TA = 25°C
VOUT (V)
Amplitude (V, A)
15
LOUT = 5 µH to
GND
VEN = 0 V to 5 V
VOUT
IVBB -32
VBB
-40
0.00325 0.004
LOUT = 5 mH
Figure 33. 5 mH Inductive Load Demagnetization
VBB = 13.5 V
ROUT = 6 Ω
TA = 25°C
COUT = 270 µF
Figure 34. TPS2HB35C-Q1 Charging a 270uF Capacitor
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8 Parameter Measurement Information
Figure 35. Parameter Definitions
20
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9 Detailed Description
9.1 Overview
The TPS2HB35-Q1 device is a dual-channel smart high-side switch intended for use with 12-V automotive
batteries. Many protection and diagnostic features are integrated in the device.
Diagnostics features include the analog SNS output that is capable of providing a signal that is proportional to
load current or device temperature. The high-accuracy load current sense allows for diagnostics of complex
loads.
This device includes protection through thermal shutdown, current limiting, transient withstand, and reverse
battery operation. For more details on the protection features, refer to the Feature Description and Application
Information sections of the document.
The TPS2HB35-Q1 is one device in a family of TI high side switches. For each device, the part number indicates
elements of the device behavior. Figure 36 gives an example of the device nomenclature.
Figure 36. Naming Convention
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9.2 Functional Block Diagram
The functional block diagram shown is for device versions A/B/C.
VBB
VBB to GND
Clamp
Internal Power
Supply
VBB to VOUT
Clamp
GND
VOUT1
Gate Driver
EN1
Power FET
Channel 1/2
EN2
VOUT2
LATCH
Current Limit
ILIM1
Thermal
Shutdown
ILIM2
Open-load /
Short-to-Bat
Detection
DIA_EN
SEL1
SEL2
Fault Indication
SNS
SNS Mux
Current Sense
Temperature
Sense
22
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9.3 Feature Description
9.3.1 Protection Mechanisms
The TPS2HB35-Q1 is designed to operate in the automotive environment. The protection mechanisms allow the
device to be robust against many system-level events such as load dump, reverse battery, short-to-ground, and
more.
There are two protection features which, if triggered, will cause the switch to automatically disable:
• Thermal Shutdown
• Current Limit
When any of these protections are triggered, the device will enter the FAULT state. In the FAULT state, the fault
indication will be available on the SNS pin (see the Diagnostic Mechanisms section of the data sheet for more
details).
The switch is no longer held off and the fault indication is reset when all of the below conditions are met:
• LATCH pin is low
• tRETRY has expired
• All faults are cleared (thermal shutdown, current limit)
NOTE
CH1 and CH2 operate independently. If there is a fault on one channel, the other channel
is not affected.
9.3.1.1 Thermal Shutdown
The device includes a temperature sensor on each power FET and also within the controller portion of the
device. There are two cases that the device will consider to be a thermal shutdown fault:
• TJ,FET > TABS
• (TJ,FET – TJ,controller) > TREL
After the fault is detected, the relevant switch will turn off. Each channel is turned off based on the measurement
of temperature sensor for that channel. Therefore, if the thermal fault is detected on only one channel, the other
channel continues operation. If TJ,FET passes TABS, the fault is cleared when the switch temperature decreases
by the hysteresis value, THYS. If instead the TREL threshold is exceeded, the fault is cleared after TRETRY passes.
9.3.1.2 Current Limit
When IOUT reaches the current limit threshold, ICL, the channel will switch off immediately. The ICL value will vary
with slew rate and a fast current increase that occurs during a powered-on short circuit can temporarily go above
the specified ICL value. In the case that the device remains enabled (and limits IOUT), the thermal shutdown
protection feature may be triggered due to the high amount of power dissipation in the device. When the switch is
in the FAULT state it will output an output current ISNSFH on the SNS pin. In addition, fault indication will occur
when the switch is actively limiting current (applicable to version C).
During a short circuit event, the device will hit the ICL value that is listed in the Electrical Characteristics table (for
the given device version and RILIM) and then turn the output off or regulate the output current to protect the
device. The device will register a short circuit event when the output current exceeds ICL, however the measured
maximum current may exceed the ICL value due to the TPS2HB35-Q1 deglitch filter and turn-off time. The device
is specified to protect itself during a short circuit event over the nominal supple voltage range (as defined in the
Electrical Characteristics table) at 125°C.
The current limit specification in the datasheet is based on the part being enabled into a short circuit condition
with 5-µH inductor on the input and output and the input resistance being less than 10 mΩ and the output
impedance less than 100 mΩ. When the part is enabled into this short circuit condition, the current will rise up to
the threshold specified in the Electrical Characteristics table before it begins to shut off the current. The deglitch
filter time for the device to react to the current threshold is 3 µs. Therefore if you take Version A/B and subtract 3
µs from the maximum current value, the current limit threshold will align with the value specified in the Electrical
Characteristics table.
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Feature Description (continued)
The current threshold is defined for version C is different than version A or B. For version C, the current through
the device continues to flow until the device hits relative thermal shutdown (TREL). For different VBB's the slope of
the current will change. Therefore the intersection point of where each of the slopes for the different VBB values is
determined as the current threshold, ILIM, as shown in Figure 37. This behavior allows for the TPS2HB35C-Q1 to
be able to charge up a 270 µF capacitor without shutting off due to hitting the current limit as versions A and B
would.
TJ
TREL
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