TPS3760
SBVS420A – MARCH 2022 – REVISED SEPTEMBER 2023
TPS3760 High Voltage Supervisor with Programmable Sense and
Reset Delay Function
1 Features
3 Description
•
The TPS3760 is a family of wide input range and
low quiescent current window supervisors for fast
detection of overvoltage (OV) or undervoltage (UV)
conditions. The TPS3760 can be connected directly
to and monitor 12 V / 24 V supply rails in a variety
of industrial applications including factory automation,
motor drives, building automation and others. Built-in
hysteresis on the SENSE pins prevents false reset
signals when monitoring a supply voltage rail.
•
•
•
•
•
•
2 Applications
•
•
•
•
•
•
Analog input module
CPU (PLC controller)
Servo drive control module
Servo drive power stage module
Servo drive functional safety module
HVAL valve and actuator control
The separate VDD and SENSE pins allow
redundancy sought by high-reliability systems.
SENSE is decoupled from VDD and can monitor
higher and lower voltages than VDD. Optional use
of external resistors are supported by the high
impedance input of the SENSE pins. CTSx and CTRx
pins allow delay adjustability on the rising and falling
edges of the RESET signals. Also, CTSx functions
as a debouncer by ignoring voltage glitches on the
monitored voltage rails; CTRx operates as a manual
reset (MR) that can be used to force a system reset.
The TPS3760 is available in a 4.1-mm×1.9-mm SOT
14-pin package. TPS3760 operates over –40°C to
+125°C TA.
Device Information
PART NUMBER
TPS3760
(1)
(1))
PACKAGE (
SOT-23 (14) (DYY)
BODY SIZE (NOM)
4.1 mm × 1.9 mm
For package details, see the mechanical drawing addendum
at the end of the data sheet.
0.95
DC/DC
0.90
MCU
VDD
VDD
RESET
SENSE
MCU Flag
TPS3760
GND
GND
GPIO
Quiescent Current (μA)
•
•
•
•
Functional Safety-Capable
– Documentation available to aid functional safety
system design
Wide supply voltage range: 2.7 V to 65 V
SENSE and RESET pins are 65 V graded
Low quiescent current: 1 µA (typical)
Flexible and wide voltage threshold options
Table 12-1
– 2.7 V to 36 V (1.5% maximum accuracy)
– 800 mV option (1% maximum accuracy)
Built-in hysteresis (VHYS)
– Percentage options: 2% to 13% (1% steps)
– Fixed options: VTH < 8 V = 0.5 V, 1 V, 1.5 V,
2 V, 2.5 V
Programmable reset time delay
– 10 nF = 12.8 ms, 10 μF = 12.8 s
Programmable sense time delay
– 10 nF = 1.28 ms, 10 μF = 1.28 s
Manual Reset (MR) feature
Output reset latching feature
Output topology: Open-Drain or Push-Pull
0.85
0.80
0.75
0.70
0.65
0.60
-40oC
25oC
125oC
0.55
Backup
Vba
Boost
Converter
Typical Application Circuit
0.50
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
Typical IDD vs VDD
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS3760
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SBVS420A – MARCH 2022 – REVISED SEPTEMBER 2023
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison......................................................... 3
6 Pin Configuration and Functions...................................4
7 Specifications.................................................................. 6
7.1 Absolute Maximum Ratings........................................ 6
7.2 ESD Ratings .............................................................. 6
7.3 Recommended Operating Conditions.........................6
7.4 Thermal Information....................................................6
7.5 Electrical Characteristics.............................................7
7.6 Timing Requirements.................................................. 9
7.7 Timing Diagrams ...................................................... 10
7.8 Typical Characteristics.............................................. 13
8 Detailed Description......................................................17
8.1 Overview................................................................... 17
8.2 Functional Block Diagram......................................... 17
8.3 Feature Description...................................................18
8.4 Device Functional Modes..........................................27
9 Application and Implementation.................................. 28
9.1 Application Information............................................. 28
9.2 Adjustable Voltage Thresholds................................. 28
9.3 Typical Application.................................................... 29
10 Power Supply Recommendations..............................32
10.1 Power Dissipation and Device Operation............... 32
11 Layout........................................................................... 33
11.1 Layout Guidelines................................................... 33
11.2 Layout Example...................................................... 33
11.3 Creepage Distance................................................. 34
12 Device and Documentation Support..........................35
12.1 Device Nomenclature..............................................35
12.2 Receiving Notification of Documentation Updates..36
12.3 Support Resources................................................. 36
12.4 Trademarks............................................................. 36
12.5 Electrostatic Discharge Caution..............................36
12.6 Glossary..................................................................36
13 Mechanical, Packaging, and Orderable
Information.................................................................... 36
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision * (March 2022) to Revision A (September 2023)
Page
• Added Latch nomenclature.................................................................................................................................3
• Removed DSK pinout description.......................................................................................................................4
• Added CTS and CTR timing plots.....................................................................................................................13
• Added Reset latch mode information................................................................................................................26
• Fixed nomenclature 08 to 01............................................................................................................................ 35
2
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5 Device Comparison
Voltage Threshold Hysteresis
TPS3760 X X XX
1.
2.
3.
4.
5.
X
DYY R
Sense logic: OV = overvoltage; UV = undervoltage
Reset topology: PP = Push-Pull; OD = Open-Drain
Reset logic: L = Active-Low; H = Active-High
A to I hysteresis options are only available for 2.9 V to 8V threshold options
Suffix 01 with VIT of 800mV corresponds to the adjustable variant, does not have internal voltage divider
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6 Pin Configuration and Functions
VDD
1
14
NC
NC
2
13
GND
SENSE
3
12
NC
NC
4
11
NC
NC
5
10
CTS
RESET
6
9
CTR
NC
7
8
GND
Figure 6-1. DYY Package,
14-Pin SOT-23,
TPS3760 (Top View)
Table 6-1. Pin Functions
PIN
SOT23 (DYY)
NAME
NO.
VDD
1
SENSE
RESET/RESET
CTS /LATCH
4
3
6
10
I/O
DESCRIPTION
I
Input Supply Voltage: Bypass with a 0.1 µF capacitor to GND.
I
Sense Voltage: The voltage monitored by this pin is compared to the internal voltage threshold,
Vth, that is determined by an internal voltage divider for fixed variants or an external voltage
divider for adjustable variants. When the SENSE pin detects a fault, RESET/RESET asserts
after the sense time delay, set by CTS. When the voltage on the SENSE pin transitions back
past Vth and hysteresis, VHYS, RESET/RESET deasserts after the reset time delay, set by CTR.
For noisy applications, placing a 10 nF to 100 nF ceramic capacitor close to this pin may be
needed for optimum performance.
Sensing Topology: Overvoltage (OV) or Undervoltage (UV)
O
Output Reset Signal: See Device Comparison for output topology options. RESET/RESET
asserts when SENSE crosses the voltage threshold after the sense time delay, set by CTS.
RESET/RESET remains asserted for the reset time delay period after SENSE transitions out of
a fault condition. For active low open-drain reset output, an external pullup resistor is required.
Do not place external pullup resistors on push-pull outputs.
Output topology: Open Drain or Push Pull, Active Low or Active High
O
SENSE Time Delay: Capacitor programmable sense delay: CTS pin offers a user-adjustable
sense delay time when asserting a reset condition. Connecting this pin to a ground-referenced
capacitor sets the RESET/RESET delay time to assert.
LATCH: CTS functionality is disabled in latch capable devices. When latch mode is activated,
RESET/RESET will not de-assert even if the fault is cleared. To activate latch mode, the LATCH
pin has to be driven low, to at least 1.4V. It is recommended to have a 10kΩ pull-down to
ground. To deactivate latch mode, a 2.1V or greater for 3µs has to be applied to the LATCH pin
while SENSE pin is not detecting a fault. RESET/RESET will de-assert with delay tctr starting on
the rising edge of the deactivating signal.
CTR /MR
9
-
RESET Time Delay: User-programmable reset time delay for RESET/RESET. Connect an
external capacitor for adjustable time delay or leave the pin floating for the shortest delay.
Manual Reset: If this pin is driven low, the RESET/RESET output will reset and become
asserted. The pin can be left floating or be connected to a capacitor. This pin should not be
driven high.
GND
8, 13
-
Ground. All GND pins must be electrically connected to the board ground.
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Table 6-1. Pin Functions (continued)
PIN
SOT23 (DYY)
NAME
NO.
NC
2, 4, 5, 7,
11,12, 14
I/O
-
DESCRIPTION
NC stands for “No Connect.” The pins are to be left floating.
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range, unless otherwise noted (1)
MIN
MAX
UNIT
Voltage
VDD, VSENSE, VRESET, VRESET
–0.3
70
V
Voltage
VCTS, VCTR
–0.3
6
V
Current
IRESET, IRESET
10
mA
Temperature (2)
Operating junction temperature, TJ
–40
150
°C
Operating Ambient temperature, TA
–40
150
°C
Storage, Tstg
–65
150
°C
Temperature
(2)
Temperature (2)
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
As a result of the low dissipated power in this device, it is assumed that TJ = TA.
7.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-002
±2000
(1)
V(ESD)
(1)
(2)
Electrostatic discharge
UNIT
V
Charged device model (CDM), per JEDEC specification
JESD22-C101 (2)
±750
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
Voltage
VDD
Voltage
VSENSE, VRESET, VRESET
Voltage
VCTS, VCTR
Current
IRESET, IRESET
TJ
Junction temperature (free air temperature)
NOM
2.7
MAX
UNIT
65
V
0
65
V
0
5.5
V
0
±5
mA
–40
125
°C
7.4 Thermal Information
TPS3760
THERMAL METRIC
(1)
DYY
UNIT
14-PIN
RθJA
Junction-to-ambient thermal resistance
131.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
61.1
°C/W
RθJB
Junction-to-board thermal resistance
56.6
°C/W
ψJT
Junction-to-top characterization parameter
3.4
°C/W
ψJB
Junction-to-board characterization parameter
56.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
6
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5 Electrical Characteristics
At VDD(MIN) ≤ VDD ≤ VDD (MAX), CTR/MR = CTS = open, output reset pull-up resistor RPU = 10 kΩ, voltage VPU = 5.5 V, and
load CLOAD = 10 pF. The operating free-air temperature range TA = – 40°C to 125°C, unless otherwise noted. Typical values
are at TA = 25°C and VDD = 16 V and VIT = 6.5 V (VIT refers to VITN or VITP).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VDD
VDD
Supply Voltage
UVLO
(1)
2.7
65
V
Under Voltage Lockout
VDD Falling below VDD (MIN)
2.7
V
VPOR
Power on Reset Voltage (2)
RESET, Active Low
(Open-Drain, Push-Pull )
VOL(MAX) = 300 mV
IOUT (Sink) = 15 µA
1.4
V
VPOR
Power on Reset Voltage (2)
RESET, Active High
(Push-Pull )
VOH(MIN) = 0.8 x VDD
IOUT (Source) = 15 µA
1.4
V
1
2.6
µA
1
2
µA
IDD
Supply current into VDD pin
VIT = 800 mV
VDD (MIN) ≤ VDD ≤ VDD
(MAX)
VIT = 2.7 V to 36 V
VDD (MIN) ≤ VDD ≤ VDD
(MAX)
SENSE (Input)
ISENSE
Input current
VIT = 800 mV
100
nA
ISENSE
Input current
VIT < 10 V
0.8
µA
ISENSE
Input current
10 V < VIT < 26 V
1.2
µA
ISENSE
Input current
VIT > 26 V
2
µA
VITN
Input Threshold Negative
(Undervoltage)
VIT = 2.7 V to 36 V
1.5
%
VITP
Input Threshold Positive
(Overvoltage)
VIT = 2.7 V to 36 V
Hysteresis Accuracy (4)
VHYS
VIT = 800 mV
(3)
VIT = 800 mV (3)
-1.5
0.792
0.800
-1.5
0.792
0.800
0.808
V
1.5
%
0.808
V
VIT = 0.8 V and 2.7 V to 36 V
VHYS Range = 2% to 13%
(1% step)
-1.5
1.5
%
VIT = 2.7 V to 8 V
VHYS = 0.5 V, 1 V, 1.5 V, 2 V,
2.5 V
(VITP - VHYS) ≥ 2.4 V, OV Only
-1.5
1.5
%
VRESET = 5.5 V
VITN < VSENSE < VITP
300
nA
VRESET = 65 V
VITN < VSENSE < VITP
300
nA
2.7 V ≤ VDD ≤ 65 V
IRESET = 5 mA
300
mV
2.7 V ≤ VDD ≤ 65 V
IRESET = 500 uA
100
mV
RESET (Output)
Ilkg(OD)
VOL (5)
VOH_DO
VOH
(5)
Open-Drain leakage
Low level output voltage
High level output voltage
dropout
(VDD - VOH = VOH_DO)
(Push-Pull only)
High level output voltage
(Push-Pull only)
2.7 V ≤ VDD ≤ 65 V
IRESET = 5 mA
0.8VDD
V
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7.5 Electrical Characteristics (continued)
At VDD(MIN) ≤ VDD ≤ VDD (MAX), CTR/MR = CTS = open, output reset pull-up resistor RPU = 10 kΩ, voltage VPU = 5.5 V, and
load CLOAD = 10 pF. The operating free-air temperature range TA = – 40°C to 125°C, unless otherwise noted. Typical values
are at TA = 25°C and VDD = 16 V and VIT = 6.5 V (VIT refers to VITN or VITP).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
877
1000
1147
Kohms
88
100
122
Kohms
Capacitor Timing (CTS, CTR)
RCTR
Internal resistance
(CTR / MR)
RCTS
Internal resistance (CTS)
Manual Reset (MR)
VMR_IH
CTR / MR pin logic high input VDD = 2.7 V
2200
VMR_IH
CTR / MR pin logic high input VDD = 65 V
2500
VMR_IL
CTR / MR pin logic low input
VDD = 2.7 V
1300
mV
VMR_IL
CTR / MR pin logic low input
VDD = 65 V
1300
mV
(1)
(2)
(3)
(4)
(5)
8
mV
mV
When VDD voltage falls below UVLO, reset is asserted for Output. VDD slew rate ≤ 100 mV / µs
VPOR is the minimum VDD voltage for a controlled output state. Below VPOR, the output cannot be determined. VDD dv/dt ≤ 100mV/µs
For adjustable voltage guidelines and resistor selection refer to Adjustable Voltage Thresholds in Application and Implementation
section
Hysteresis is with respect to VITP and VITN voltage threshold. VITP has negative hysteresis and VITN has positive hysteresis.
For VOH and VOL relation to output variants refer to Timing Figures after the Timing Requirement Table
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7.6 Timing Requirements
At VDD(MIN) ≤ VDD ≤ VDD (MAX), CTR/MR = CTS = open (1), output reset pull-up resistor RPU = 10 kΩ, voltage VPU = 5.5V, and
CLOAD = 10 pF. VDD and SENSE slew rate = 1V / µs. The operating free-air temperature range TA = – 40°C to 125°C, unless
otherwise noted. Typical values are at TA = 25°C and VDD = 16 V and VIT = 6.5 V (VIT refers to either VITN or VITP).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIT = 2.7 V to 36 V
CCTR = Open
20% Overdrive from Hysteresis
100
µs
VIT = 800 mV
CCTR = Open
20% Overdrive from Hysteresis
40
µs
Common timing parameters
tCTR
tCTS
tSD
(1)
(2)
(3)
(4)
Reset release time delay
(CTR/MR) (2)
Sense detect time delay
(CTS) (3)
Startup Delay (4)
VIT = 2.7 V to 36 V
CCTS = Open
20% Overdrive from VIT
34
90
µs
VIT = 800 mV
CCTS = Open
20% Overdrive from VIT
8
17
µs
2
ms
CCTR/MR = Open
CCTR = Reset delay channel
CCTS = Sense delay channel
CTR Reset detect time delay:
Overvoltage active-LOW output is measure from VITP - HYS to VOH
Undervoltage active-LOW output is measure from VITN + HYS to VOH
Overvoltage active-HIGH output is measure from VITP - HYS to VOL
Undervoltage active-HIGH output is measure from VITN + HYS to VOL
CTS Sense detect time delay:
Active-low output is measure from VIT to VOL (or VPullup)
Active-high output is measured from VIT to VOH
VIT refers to either VITN or VITP
During the power-on sequence, VDD must be at or above VDD (MIN) for at least tSD before the output is in the correct state based on
VSENSE.
tSD time includes the propagation delay (CCTR = Open). Capaicitor on CCTR will add time to tSD.
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7.7 Timing Diagrams
Highest Absolute Limit for the Monitored Voltage Rail
[1%]
VIT+(OV)MAX
Accuracy band across
(-40ºC to 125ºC)
Tolerance[+3% to +11%]
VIT+(OV)
VIT+(OV)MIN
[0.63% * (VIT+(OV)MIN)]
[VHYSMAX = 0.9% * (VIT+(OV)MIN )]
Hys band for VIT+(OV)
Tolerance[-3% to -11%]
Power
Supply
Tolerance
Window
[VHYSMAX = 0.9% * (VIT-(UV)MIN )]
[1%]
[0.25%
]
[-0.25%]
[0.63% * (VIT-(UV)MIN)]
Hys band for VIT-(UV)
VIT-(UV)MIN
VIT-(UV)
Accuracy band across
(-40ºC to 125ºC)
VIT-(UV)MAX
Lowest Absolute Limit for the Monitored Voltage Rail
Figure 7-1. Voltage Threshold and Hysteresis Accuracy
10
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VDD(MIN)
VDD
UVLO(MIN)
VPOR
SENSE
VSENSE
VITN (UV) + VHYS
VITN (UV)
*See
Note C
t < tCTS
tSD + tCTR
tCTS
tCTR
tSD + tCTR
tCTS
tCTR
Undefined
*See
Note C
Undefined
A.
B.
C.
Undefined
RESET_UVxx
Undefined
RESET_UVxx
Hysteresis
For open-drain output option, the timing diagram assumes the RESET_UVOD / RESET_UVOD pin is connected via an external pull-up resistor to VDD.
Be advised that Figure 7-2 shows the VDD falling slew rate is slow or the VDD decay time is much larger than the propagation detect delay (tCTR) time.
RESET_UVxx / RESET_UVxx is asserted when VDD goes below the UVLO(MIN) threshold after the time delay, tCTR, is reached.
Figure 7-2. SENSE Undervoltage (UV) Timing Diagram
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VDD(MIN)
VDD
UVLO(MIN)
VPOR
VITP (OV)
SENSE
VITP (OV) - VHYS
Hysteresis
VSENSE
tSD + tCTR
tCTS
tCTR
tSD + tCTR
tCTS
tCTR
Undefined
*See
Note C
Undefined
A.
B.
C.
Undefined
RESET_OVxx
Undefined
RESET_OVxx
*See
Note C
t < tCTS
For open-drain output option, the timing diagram assumes the RESET_OVOD / RESET_OVOD pin is connected via an external pull-up resistor to VDD.
Be advised that Figure 7-3 shows the VDD falling slew rate is slow or the VDD decay time is much larger than the propagation detect delay (tCTR) time.
RESET_OVxx / RESET_OVxx is asserted when VDD goes below the UVLO(MIN) threshold after the time delay, tCTR, is reached.
Figure 7-3. SENSE Overvoltage (OV) Timing Diagram
12
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7.8 Typical Characteristics
Typical characteristics show the typical performance of the device. Test conditions are TA = 25°C, RPU = 100 kΩ, CLoad = 50
pF, unless otherwise noted.
20000
10000
TCTR(ms)
1000
100
10
1
25oC
0.1
0.0001
0.001
0.01
0.1
CCTR_EXT (F)
1
10
Figure 7-5. TCTS vs CCTS
0.95
0.90
0.90
0.85
0.85
Quiescent Current (μA)
Quiescent Current (μA)
Figure 7-4. TCTR vs CCTR
0.80
0.75
0.70
0.65
0.60
-40oC
25oC
125oC
0.55
0.80
0.75
0.70
0.65
0.60
-40oC
25oC
125oC
0.55
0.50
0.50
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
0
5
RESET = High, VIT = 2.7 V
RESET = Low, VIT = 2.7 V
Figure 7-7. VDD vs IDD (RESET = Low, VIT = 2.7 V)
1.30
1.40
1.25
1.35
1.20
1.30
Quiescent Current (μA)
Quiescent Current (μA)
Figure 7-6. VDD vs IDD (RESET = High, VIT = 2.7 V)
1.15
1.10
1.05
1.00
0.95
0.90
-40C
25oC
125C
0.85
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
0.80
1.25
1.20
1.15
1.10
1.05
1.00
-40oC
25oC
125oC
0.95
0.90
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
0
5
RESET = High, VIT = 0.8 V
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
RESET = Low, VIT = 0.8 V
Figure 7-8. VDD vs IDD (RESET = High, VIT = 0.8 V)
Figure 7-9. VDD vs IDD (RESET = Low, VIT = 0.8 V)
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7.8 Typical Characteristics (continued)
1600
1600
1400
1400
1200
1200
Sense Current (nA)
Sense Current (nA)
Typical characteristics show the typical performance of the device. Test conditions are TA = 25°C, RPU = 100 kΩ, CLoad = 50
pF, unless otherwise noted.
1000
800
600
400
1000
800
600
400
-40oC
25oC
125oC
200
-40oC
25oC
125oC
200
0
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Sense Voltage (V)
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Sense Voltage (V)
VDD = 2.7 V
VDD = 65 V
Figure 7-10. VSENSE vs ISENSE
Figure 7-11. VSENSE vs ISENSE
0.21
0.21
-40oC
25oC
125oC
0.15
0.15
0.12
0.12
0.09
0.09
0.06
0.06
0.03
0.03
0
0.0
0.5
1.0
-40oC
25oC
125oC
0.18
VOL (V)
VOL (V)
0.18
1.5
2.0 2.5 3.0
IRESET (mA)
3.5
4.0
4.5
0.00
0.0
5.0
0.5
1.0
1.5
VDD = 2.7 V
4.5
5.0
0.21
-40oC
25oC
125oC
0.18
0.15
0.15
0.12
0.12
0.09
0.09
0.06
0.06
0.03
0.03
0.5
1.0
-40oC
25oC
125oC
0.18
VOL (V)
VOL (V)
4.0
Figure 7-13. Open-Drain Active Low VOL vs IRESET
0.21
1.5
2.0 2.5 3.0
IRESET (mA)
3.5
4.0
4.5
5.0
0
0.0
0.5
VDD = 2.7 V
1.0
1.5
2.0 2.5 3.0
IRESET (mA)
3.5
4.0
4.5
5.0
VDD = 65 V
Figure 7-14. Open-Drain Active High VOL vs IRESET
14
3.5
VDD = 65 V
Figure 7-12. Open-Drain Active Low VOL vs IRESET
0
0.0
2.0 2.5 3.0
IRESET (mA)
Figure 7-15. Open-Drain Active High VOL vs IRESET
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7.8 Typical Characteristics (continued)
Typical characteristics show the typical performance of the device. Test conditions are TA = 25°C, RPU = 100 kΩ, CLoad = 50
pF, unless otherwise noted.
0.21
0.21
-40oC
25oC
125oC
0.18
0.15
0.15
0.12
0.12
VOL (V)
VOL (V)
0.18
0.09
0.09
0.06
0.06
0.03
0.03
0
0.0
0.5
1.0
-40oC
25oC
125oC
1.5
2.0 2.5 3.0
IRESET (mA)
3.5
4.0
4.5
0
0.0
5.0
0.5
VDD = 2.7 V
2.0 2.5 3.0
IRESET (mA)
3.5
4.0
4.5
5.0
Figure 7-17. Push-Pull Active High VOL vs IRESET
0.21
0.21
0.18
0.18
0.15
0.15
0.12
0.12
VOL (V)
VOL (V)
1.5
VDD = 65 V
Figure 7-16. Push-Pull Active High VOL vs IRESET
0.09
0.06
0.09
0.06
-40oC
25oC
125oC
0.03
-40oC
25oC
125oC
0.03
0
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
0
Figure 7-18. Open-Drain Active Low VOL vs VDD
5
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
Figure 7-19. Open-Drain Active High VOL vs VDD
0.21
0.21
0.18
0.18
0.15
0.15
0.12
0.12
VOL (V)
VOL (V)
1.0
0.09
0.06
0.09
0.06
o
-40 C
25oC
125oC
0.03
0
-40oC
25oC
125oC
0.03
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
Figure 7-20. Push-Pull Active Low VOL vs VDD
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
Figure 7-21. Push-Pull Active High VOL vs VDD
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7.8 Typical Characteristics (continued)
70
70
60
60
50
50
40
40
VOH (V)
VOH (V)
Typical characteristics show the typical performance of the device. Test conditions are TA = 25°C, RPU = 100 kΩ, CLoad = 50
pF, unless otherwise noted.
30
20
30
20
o
-40 C
25oC
125oC
10
0
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
Figure 7-22. Push-Pull Active Low VOH vs VDD
16
-40oC
25oC
125oC
10
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Supply Voltage (V)
Figure 7-23. Push-Pull Active High VOH vs VDD
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8 Detailed Description
8.1 Overview
The TPS3760 is a family of high voltage and low quiescent current reset ICs with fixed threshold voltage. A
voltage divider is integrated to eliminate the need for external resistors and eliminate leakage current that comes
with resistor dividers. However, it can also support an external resistor if required by the application. The lowest
threshold 800 mV (bypass internal resistor ladder) is recommenced for external resistors use case to take
advantage of faster detection time and lower ISENSE current.
VDD, SENSE and RESET pins can support 65 V continuous operation; both VDD and SENSE voltage levels can
be independent of each other, meaning VDD pin can be connected at 2.7 V while SENSE pins are connected to
a higher voltage. Note, the TPS3760 does not have clamps within the device so external circuits or devices must
be added to limit the voltages to the absolute maximum limit.
Additional features include programmable sense time delay (CTS) and reset delay time and manual reset (CTR /
MR).
8.2 Functional Block Diagram
VDD
*Device Opons
Boxes shaded in blue
See Device Nomenclature
CTS
CTR / MR
IQ
SubReg
POR
VDD
Voltage
Divider
-
VRef Divider
+
SENSE
OV or UV
Select
Sense
Delay
Manual
Reset
Reset
Delay
Output
Logic select
(High/Low)
RESET
REFERENCE
GND
Figure 8-1. Functional Block Diagram 1
1
Refer to Section 5 for complete list of topologies and output logic combination
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8.3 Feature Description
8.3.1 Input Voltage (VDD)
VDD operating voltage ranges from 2.7 V to 65 V. An input supply capacitor is not required for this device;
however, if the input supply is noisy good analog practice is to place a 0.1 µF capacitor between the VDD and
GND.
VDD needs to be at or above VDD(MIN) for at least the start-up time delay (tSD) for the device to be fully functional.
VDD voltage is independent of VSENSE and VRESET, meaning that VDD can be higher or lower than the other
pins.
8.3.1.1 Undervoltage Lockout (VPOR < VDD < UVLO)
When the voltage on VDD is less than the UVLO voltage, but greater than the power-on reset voltage (VPOR),
the output pins will be in reset, regardless of the voltage at SENSE pins.
8.3.1.2 Power-On Reset (VDD < VPOR )
When the voltage on VDD is lower than the power on reset voltage (VPOR), the output signal is undefined and is
not to be relied upon for proper device function.
Note: Figure 8-2 and Figure 8-3 assume an external pull-up resistor is connected to the reset pin via VDD.
SENSE VOLTAGE OUTSIDE OF THRESHOLD
VITN > VSENSE > VITP
VSENSE
VDD(MIN)
VDD
UVLO(MIN)
VPOR
RESET
Active Low
Output stays low since VSENSE
is outside of threshold
VOL
RESET
Active High
VOL
Undefined
tSD+tCTR
Undefined
Figure 8-2. Power Cycle (SENSE Outside of Nominal Voltage)
18
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SENSE VOLTAGE WITH IN THRESHOLD
VITN < VSENSE < VITP
VSENSE
VDD(MIN)
VDD
UVLO(MIN)
VPOR
RESET
Active Low
VOL
RESET
Active High
VOL
Undefined
tSD+tCTR
Undefined
Figure 8-3. Power Cycle (SENSE Within Nominal Voltage)
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8.3.2 SENSE
The TPS3760 high voltage family integrates a voltage comparator, a precision reference voltage and a trimmed
resistor divider. This configuration optimizes device accuracy because all resistor tolerances are accounted for
in the accuracy and performance specifications. Device also has built-in hysteresis that provides noise immunity
and ensures stable operation.
Although not required in most cases, for noisy applications good analog design practice is to place a 10 nF to
100 nF bypass capacitor at the SENSE inputs in order to reduce sensitivity to transient voltages on the
monitored signal. SENSE can be connected directly to VDD pin.
8.3.2.1 SENSE Hysteresis
Built-in hysteresis to avoid erroneous output reset release. The hysteresis is opposite to the threshold voltage;
for overvoltage options the hysteresis is subtracted from the positive threshold (VITP), for undervoltage options
hysteresis is added to the negative threshold (VITN).
VRESET
VRESET
VSENSE
VSENSE
VITP - VHYS VITP
VITP - VHYS VITP
Figure 8-4. Hysteresis (Overvoltage Active-Low)
Figure 8-5. Hysteresis (Overvoltage Active-High)
VRESET
VRESET
VSENSE
VITN
VITN
VITN+VHYS
Figure 8-6. Hysteresis (Undervoltage Active-High)
20
VSENSE
VITN+VHYS
Figure 8-7. Hysteresis (Undervoltage Active-Low)
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Table 8-1. Common Hysteresis Lookup Table
TARGET
DEVICE ACTUAL HYSTERESIS OPTION
DETECT THRESHOLD
TOPOLOGY
RELEASE VOLTAGE (V)
18.0 V
Overvoltage
17.5 V
-3%
18.0 V
Overvoltage
16.0 V
-11%
17.0 V
Overvoltage
16.5 V
-3%
16.0 V
Overvoltage
15.0 V
-6%
15.0 V
Overvoltage
14.0 V
-7%
6.0 V
Undervoltage
6.5 V
0.5 V
5.5 V
Undervoltage
6V
0.5 V
8V
Undervoltage
9V
1V
5V
Undervoltage
7.5 V
2.5 V
Table 8-1 shows a sample of hysteresis and voltage options for the TPS3760. For threshold voltages ranging
from 2.7 V to 8 V, one option is to select a fixed hysteresis value ranging from 0.5 V to 2.5 V in increments of
0.5 V. Additionally, a second option can be selected where the hysteresis value is a percentage of the threshold
voltage. The percentage of voltage hysteresis ranges from 2% to 13%.
Knowing the amount of hysteresis voltage, the release voltage for the undervoltage (UV) channel is
(VITN (UV) + VHYS) and for the overvoltage (OV) channel is (VITP (OV) - VHYS). The accuracy of the release voltage,
or stated in the Electrical Characteristics as Hysteresis Accuracy is ±1.5%. Expanding what is shown in Table
8-1, below are a few voltage hysteresis examples that include the hysteresis accuracy:
Undervoltage (UV) Channel
VITN = 0.8 V
Voltage Hysteresis (VHYS) = 5% = 40 mV
Hysteresis Accuracy = ±1.5% = 39.4 mV or 40.6 mV
Release Voltage = VITN + VHYS = 839.4 mV to 840.6 mV
Overvoltage (OV) Channel
VITP = 8 V
Voltage Hysteresis (VHYS) = 2 V
Hysteresis Accuracy = ±1.5% = 1.97 V or 2.03 V
Release Voltage = VITN - VHYS = 5.97 V to 6.03 V
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8.3.3 Output Logic Configurations
TPS3760 is a single channel device that has a single input sense pin and a single reset pin. The single channel
is available as Open-Drain and Push-Pull.
The available output logic configuration combinations are shown in Table 8-2.
Table 8-2. TPS3760 Output Logic
DESCRIPTION
NOMENCLATURE
VALUE
GPN
TPS3760 (+ topology)
CHANNEL CONFIGURATION
TPS3760A
UV OD L
Topology (OV and UV only)
•
•
•
•
•
•
UV = Undervoltage
OV = Overvoltage
PP = Push-Pull
OD = Open-Drain
L = Active low
H = Active high
TPS3760B
UV PP L
TPS3760C
UV OD H
TPS3760D
UV PP H
TPS3760E
OV OD L
TPS3760F
OV PP L
TPS3760G
OV OD H
TPS3760H
OV PP H
8.3.3.1 Open-Drain
Open-drain output requires an external pull-up resistor to hold the voltage high to the required voltage logic.
Connect the pull-up resistor to the proper voltage rail to enable the output to be connected to other devices at
the correct interface voltage levels.
To select the right pull-up resistor consider system VOH and the (Ilkg) current provided in the electrical
characteristics, high resistors values will have a higher voltage drop affecting the output voltage high. The
open-drain output can be connected as a wired-AND logic with other open-drain signals such as another
TPS3760 open-drain output pin.
8.3.3.2 Push-Pull
Push-Pull output does not require an external resistor since is the output is internally pulled-up to VDD during
VOH condition and output will be connected to GND during VOH condition.
8.3.3.3 Active-High (RESET)
RESET (active-high), denoted with no bar above the pin label. RESET remains low (VOL, deasserted) as long as
sense voltage is in normal operation within the threshold boundaries and VDD voltage is above UVLO. To assert
a reset sense pins needs to meet the condition below:
•
•
For undervoltage variant the SENSE voltage need to cross the lower boundary (VITN).
For overvoltage variant the SENSE voltage needs to cross the upper boundary (VITP).
8.3.3.4 Active-Low (RESET)
RESET (active low) denoted with a bar above the pin label. RESET remains high voltage (VOH, deasserted)
(open-drain variant VOH is measured against the pullup voltage) as long as sense voltage is in normal operation
within the threshold boundaries and VDD voltage is above UVLO. To assert a reset sense pins needs to meet
the condition below:
• For undervoltage variant the SENSE voltage need to cross the lower boundary (VITN).
• For overvoltage variant the SENSE voltage needs to cross the upper boundary (VITP).
22
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8.3.4 User-Programmable Reset Time Delay
TPS3760 has adjustable reset release time delay with external capacitors.
•
•
A capacitor in CTR / MR programs the reset time delay of the output.
No capacitor on this pin gives the fastest reset delay time indicated in the Section 7.6.
8.3.4.1 Reset Time Delay Configuration
The time delay (tCTR) can be programmed by connecting a capacitor between CTR pin and GND.
The relationship between external capacitor CCTR_EXT (typ) and the time delay tCTR (typ) is given by Equation 1.
tCTR (typ) = -ln (0.28) x RCTR (typ) x CCTR_EXT (typ) + tCTR (no cap)
(1)
RCTR (typ) = is in kilo ohms (kOhms)
CCTR_EXT (typ) = is given in microfarads (μF)
tCTR (typ) = is the reset time delay (ms)
The reset delay varies according to three variables: the external capacitor (CCTR_EXT), CTR pin internal
resistance (RCTR) provided in Section 7, and a constant. The minimum and maximum variance due to the
constant is show in Equation 2 and Equation 3:
tCTR (min) = -ln (0.31) x RCTR (min) x CCTR_EXT (min) + tCTR (no cap (min))
(2)
tCTR (max) = -ln (0.25) x RCTR (max) x CCTR_EXT (max) + tCTR (no cap (max))
(3)
The recommended maximum reset delay capacitor for the TPS3760 is limited to 10 μF as this ensures enough
time for the capacitor to fully discharge when a voltage fault occurs. Also, having a too large of a capacitor
value can cause very slow charge up (rise times) due to capacitor leakage and system noise can cause the the
internal circuit to trip earlier or later near the threshold. This leads to variation in time delay where it can make
the delay accuracy worse in the presence of system noise.
When a voltage fault occurs, the previously charged up capacitor discharges and if the monitored voltage
returns from the fault condition before the delay capacitor discharges completely, the delay will be shorter than
expected. The capacitor will begin charging from a voltage above zero and resulting in shorter than expected
time delay. A larger delay capacitor can be used so long as the capacitor has enough time to fully discharge
during the duration of the voltage fault. To ensure the capacitor is fully discharged, the time period or duration of
the voltage fault needs to be greater than 5% of the programmed reset time delay.
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8.3.5 User-Programmable Sense Delay
TPS3760 has adjustable sense release time delay with external capacitors.
•
•
A capacitor in CTS programs the excursion detection on SENSE.
No capacitor on these pins gives the fastest detection time indicated in the Section 7.6.
8.3.5.1 Sense Time Delay Configuration
The time delay (tCTS) can be programmed by connecting a capacitor between CTS pin and GND.
The relationship between external capacitor CCTS_EXT (typ) and the time delay tCTS (typ) is given by Equation 4.
tCTS (typ) = -In (0.28) x RCTS (typ) x CCTS_EXT (typ) + tCTS (no cap)
(4)
RCTS = is in kilo ohms (kOhms)
CCTS_EXT = is given in microfarads (μF)
tCTS = is the sense time delay (ms)
The sense delay varies according to three variables: the external capacitor (CCTS_EXT), CTS pin internal
resistance (RCTS) provided in Electrical Characteristics, and a constant. The minimum and maximum variance
due to the constant is show in Equation 5 and Equation 6:
tCTS (min) = -ln (0.31) x RCTS (min) x CCTS_EXT (min) + tCTS (no cap (min))
(5)
tCTS (max) = -ln (0.25) x RCTS (max) x CCTS_EXT (max) + tCTSx (no cap (max))
(6)
The recommended maximum sense delay capacitor for the is limited to 10 μF as this ensures enough time for
the capacitor to fully discharge when a voltage fault occurs. Also, having a too large of a capacitor value can
cause very slow charge up (rise times) and system noise can cause the the internal circuit to trip earlier or later
near the threshold. This leads to variation in time delay where it can make the delay accuracy worse in the
presence of system noise.
When a voltage fault occurs, the previously charged up capacitor discharges and if the monitored voltage
returns from the fault condition before the delay capacitor discharges completely, the delay will be shorter than
expected. The capacitor will begin charging from a voltage above zero and resulting in shorter than expected
time delay. A larger delay capacitor can be used so long as the capacitor has enough time between fault events
to fully discharge during the duration of the voltage fault. To ensure the capacitor is fully discharged, the time
period or time duration between fault events needs to be greater than 10% of the programmed sense time delay.
24
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8.3.6 Manual RESET (CTR / MR) Input
The manual reset input allows a processor or other logic circuits to initiate a reset. In this section MR is a generic
reference to (CTR / MR). A logic low on MR causes RESET to assert on reset output. After MR is left floating,
RESET will release the reset if the voltage at SENSE pin is at nominal voltage. MR should not be driven high,
this pin should be left floating or connected to a capacitor to GND, this pin can be left unconnected if is not used.
If the logic driving the MR cannot tri-state (floating and GND) then a logic-level FET should be used as illustrated
in Figure 8-8.
Low Voltage
High Voltage
VDD
MCU
CTR
GPIO
Low or Floa ng
Reset
Delay
Acve low
Logic
Figure 8-8. Manual Reset Implementation
SENSE VOLTAGE WITH IN THRESHOLD
VITN < VSENSE < VITP
VSENSE
CTR/MR
< VMR
MR floating or
connected to capacitor
MR floating or
connected to capacitor
RESET
Active-High
RESET
Active-Low
Figure 8-9. Manual Reset Timing Diagram
Table 8-3. MR Functional Table
MR
SENSE ON NOMINAL VOLTAGE
RESET STATUS
Low
Yes
Reset asserted
Floating
Yes
Fast reset release when SENSE
voltage goes back to nominal
voltage
Capacitor
Yes
Programmable reset time delay
High
Yes
NOT Recommended
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8.3.7 RESET Latch Mode
The TPS3760 features a output latch mode on the RESET/RESET pin when connecting the LATCH pin to
common ground. A pull-down resistor, 10 kΩ, is recommended to limit current consumption of the system. In
latch mode, if the RESET/RESET pin is low or triggers low and less than 1.4V is applied to the LATCH pin,
the RESET/RESET pin stays asserted regardless if VSENSE goes within the acceptable voltage boundaries
(VSENSE > VITP + Vhyst for UV or VSENSE < VITN - Vhyst for OV). To unlatch the device a voltage greater
than 2.1 V for greater than 3 μs is applied to the LATCH pin. This is recommended to maintain a proper unlatch.
The RESET/RESET pin triggers high after the duration of tctr. TI recommends using a series resistance to limit
current when an unlatch voltage is applied.
VDD(MIN)
Vpor
VITP
VITN
VSENSE
LATCH
UNDEFINED
TCTR
TCTR
TCTR
RESET
Figure 8-10. Latch Timing Diagram
26
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8.4 Device Functional Modes
Table 8-4. Undervoltage Detect Functional Mode Truth Table
SENSE
CTR (1) / MR PIN
VDD PIN
OUTPUT (2)
(RESET PIN)
SENSE > VITN(UV)
Open or capacitor
connected
VDD > VDD(MIN)
High
SENSE > VITN(UV)
SENSE < VITN(UV)
Open or capacitor
connected
VDD > VDD(MIN)
Low
Undervoltage
Detection
SENSE < VITN(UV)
SENSE > VITN(UV)
Open or capacitor
connected
VDD > VDD(MIN)
Low
Normal Operation
SENSE < VITN(UV)
SENSE > VITN(UV) + HYS
Open or capacitor
connected
VDD > VDD(MIN)
High
Manual Reset
SENSE > VITN(UV)
SENSE > VITN(UV)
Low
VDD > VDD(MIN)
Low
UVLO Engaged
SENSE > VITN(UV)
SENSE > VITN(UV)
Open or capacitor
connected
VPOR < VDD < VDD(MIN)
Low
Below VPOR,
Undefined Output
SENSE > VITN(UV)
SENSE > VITN(UV)
Open or capacitor
connected
VDD < VPOR
Undefined
DESCRIPTION
PREVIOUS
CONDITION
CURRENT CONDITION
Normal Operation
SENSE > VITN(UV)
Undervoltage
Detection
(1)
(2)
Reset time delay is ignored in the truth table.
Open-drain active low output requires an external pull-up resistor to a pull-up voltage.
Table 8-5. Overvoltage Detect Functional Mode Truth Table
SENSE
CTR (1) / MR PIN
VDD PIN
OUTPUT (2)
(RESET PIN)
SENSE < VITN(OV)
Open or capacitor
connected
VDD > VDD(MIN)
High
SENSE < VITN(OV)
SENSE > VITN(OV)
Open or capacitor
connected
VDD > VDD(MIN)
Low
Overvoltage
Detection
SENSE > VITN(OV)
SENSE < VITN(OV)
Open or capacitor
connected
VDD > VDD(MIN)
Low
Normal Operation
SENSE > VITN(OV)
SENSE < VITN(OV) - HYS
Open or capacitor
connected
VDD > VDD(MIN)
High
Manual Reset
SENSE < VITN(OV)
SENSE < VITN(OV)
Low
VDD > VDD(MIN)
Low
UVLO Engaged
SENSE < VITN(OV)
SENSE < VITN(OV)
Open or capacitor
connected
VPOR < VDD < UVLO
Low
Below VPOR,
Undefined Output
SENSE < VITN(OV)
SENSE < VITN(OV)
Open or capacitor
connected
VDD < VPOR
Undefined
DESCRIPTION
PREVIOUS
CONDITION
CURRENT CONDITION
Normal Operation
SENSE < VITN(OV)
Overvoltage
Detection
(1)
(2)
Reset time delay is ignored in the truth table.
Open-drain active low output requires an external pull-up resistor to a pull-up voltage.
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The following sections describe in detail how to properly use this device. As this device has many applications
and setups, there are many situations that this datasheet can not characterize in detail and will vary from these
applications depending on the requirements of the final application
9.2 Adjustable Voltage Thresholds
Equation 7 illustrates an example of how to adjust the voltage threshold with external resistor dividers. The
resistors can be calculated depending on the desired voltage threshold and device part number. TI recommends
using the 0.8 V voltage threshold device when using an adjustable voltage variant. This variant bypasses the
internal resistor ladder.
For example, consider a 12 V rail being monitored VMON for undervoltage (UV) using of the TPS3760A012DYYR
variant. Using Equation 7 and shown in Equation 8, R1 is the top resistor of the resistor divider that is between
VMON and VSENSE, R2 is the bottom resistor that is between VSENSE and GND, VMON is the voltage rail that is
being monitored and VSENSE is the input threshold voltage. The monitored UV threshold, denoted as VMON-,
where the device will assert a reset signal occurs when VSENSE = VIT-(UV) or, for this example, VMON- = 10.8V
which is 90% from 12 V. Using Equation 7 and assuming R2 = 10kΩ , R1 can be calculated shown in Equation 8
where IR1 is represented in Equation 9:
VSENSE = VMON- × (R2 ÷ (R1 + R2))
(7)
R1 = (VMON- - VSENSE) ÷ IR1
(8)
IR1 = IR2 = VSENSE ÷ R2
(9)
Substituting Equation 9 into Equation 8 and solving for R1 in Equation 7, R1 = 125kΩ. The TPS3760A012DYYR
is typically meant to monitor a 0.8 V rail with ±2% voltage threshold hysteresis. For the reset signal to become
deasserted, VMON would need to go above VIT- + VHYS. For this example,
VMON = 11.016 V when the reset signal becomes deasserted.
There are inaccuracies that must be taken into consideration while adjusting voltage thresholds. Aside from the
tolerance of the resistor divider, there is an internal resistance of the SENSE pin that may affect the accuracy
of the resistor divider. Although expected to be very high impedance, users are recommended to calculate the
values for the design specifications. The internal SENSE resistance RSENSE can be calculated by the SENSE
voltage VSENSE divided by the SENSE current ISENSE as shown in Equation 11. VSENSE can be calculated using
Equation 7 depending on the resistor divider and monitored voltage. ISENSE can be calculated using Equation 10.
28
ISENSE = [(VMON - VSENSE) ÷ R1] - (VSENSE ÷ R2)
(10)
RSENSE = VSENSE ÷ ISENSE
(11)
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VDD
VMON
VDD
R1
VDD
VSENSE2
10 kΩ
RESET
SENSE
TPS3760
R2
CTS
CTR
GND
Figure 9-1. Adjustable Voltage Threshold with External Resistor Dividers
9.3 Typical Application
9.3.1 Design 1: Off-Battery Monitoring
This application is intended for the initial power stage in applications with the 12 V batteries. Variation of the
battery voltage is common between 9 V and 16 V. Furthermore, if cold-cranking and load dump conditions are
considered, voltage transients can occur as low as 3 V and as high as 42 V. In this design example, we are
highlighting the ability for low power, direct off-battery voltage supervision.
Figure 11-1 illustrates an example of how the TPS3760 is monitoring the battery voltage while being powered by
it, as well.
DC/DC
MCU
VDD
VDD
RESET
SENSE
MCU Flag
GPIO
TPS3760
GND
GND
Backup
Vba
Boost
Converter
Figure 9-2. TPS3760 Overvoltage Supervisor with Direct Off-Battery Monitoring
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9.3.1.1 Design Requirements
This design requires voltage supervision on a 12 V power supply voltage rail with possibility of the 12 V rail rising
up as high as 42 V. The undervoltage fault occurs when the power supply voltage drops below 7.7 V.
PARAMETER
DESIGN REQUIREMENT
DESIGN RESULT
Power Rail Voltage Supervision
Monitor 12-V power supply for undervoltage
condition, trigger a undervoltage fault at 7.7 V.
TPS3760 provides voltage monitoring with 1.5%
max accuracy with adjustable/non-adjustable
variations.
Maximum Input Power
Operate with power supply input up to 42 V.
The TPS3760 can support a VDD of up to 65 V.
Output logic voltage
Open-Drain Output Topology
An open-drain output is recommended to provide
the correct reset signal, but a push-pull can also be
used.
Maximum system current
consumption
2 µA max when power supply is at 12 V typical
TPS3760 allows for IQ to remain low with support
of up to 65 V. This allows for no external resistor
divider to be required.
Voltage Monitor Accuracy
Maximum voltage monitor accuracy of 1.5%.
The TPS3760 has 1.5% maximum voltage monitor
accuracy.
Delay when returning from fault
condition
RESET delay of at least 12.8 ms when returning
from a undervoltage fault.
CCTR = 10 nF sets 12.8 ms delay
9.3.1.2 Detailed Design Procedure
The primary advantage of this application is being able to directly monitor a voltage on an automotive battery
without needing external an resistor dividers on the SENSE input. This keeps the overall IQ of the design low
while still achieving the desired rail monitoring.
Voltage rail monitoring is done by connecting the SENSE input directly to the battery rail after the TVS protection
diodes. The TPS3760 that is being used in this example is a fixed voltage variant where theSENSE threshold
voltage has been set internally. Word of caution, the TVS protection diodes must be chosen such that the
transient voltages on the monitored rails do not exceed the absolute max limit listed in Section 7.1.
To use this configuration, the specific voltage threshold variation of the device must be chosen according to the
application. In this configuration, the '77' variation must be chosen for 7.7 V as shown in Section 5.
The device being able to handle 65 V on VDD means the monitored voltage rail can go as high as 42 V for the
application transients and not violate the recommended maximum for the supervisor as it usually would. This
is useful when monitoring a voltage rail that has a wide range that may go much higher than the nominal rail
voltage such as in this case. Good design practice recommends using a 0.1 µF capacitor on the VDD pin and
this capacitance may need to increase if using an adjustable version with a resistor divider.
30
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9.3.1.3 Application Curves
V_SENSE
RESET_B
Figure 9-3. Undervoltage Reset Waveform
V_SENSE
RESET_B
Figure 9-4. Undervoltage Recovery Waveform
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10 Power Supply Recommendations
These devices are designed to operate from an input supply with a voltage range between 1.4 V (VPOR) to 65
V (maximum operation). Good analog design practice recommends placing a minimum 0.1 µF ceramic capacitor
as near as possible to the VDD pin.
10.1 Power Dissipation and Device Operation
The permissible power dissipation for any package is a measure of the capability of the device to pass heat from
the power source, the junctions of the IC, to the ultimate heat sink, the ambient environment. Thus, the power
dissipation is dependent on the ambient temperature and the thermal resistance across the various interfaces
between the die junction and ambient air.
The maximum continuous allowable power dissipation for the device in a given package can be calculated using
Equation 12:
PD-MAX = ((TJ-MAX – TA) / RθJA)
(12)
The actual power being dissipated in the device can be represented by Equation 13:
PD = VDD × IDD + pRESET
(13)
pRESET is calculated by Equation 14 or Equation 15
pRESET (PUSHPULL) = VDD - VRESET x IRESET
(14)
pRESET (OPEN-DRAIN) = VRESET x IRESET
(15)
Equation 12 and Equation 13 establish the relationship between the maximum power dissipation allowed due to
thermal consideration, the voltage drop across the device, and the continuous current capability of the device.
These two equations should be used to determine the optimum operating conditions for the device in the
application.
In applications where lower power dissipation (PD) and/or excellent package thermal resistance (RθJA) is
present, the maximum ambient temperature (TA-MAX) may be increased.
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum
ambient temperature (TA-MAX) may have to be de-rated. TA-MAX is dependent on the maximum operating junction
temperature (TJ-MAX-OP = 125°C), the maximum allowable power dissipation in the device package in the
application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (RθJA),
as given by Equation 16:
TA-MAX = (TJ-MAX-OP – (RθJA × PD-MAX))
32
(16)
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11 Layout
11.1 Layout Guidelines
•
•
•
•
•
•
Make sure that the connection to the VDD pin is low impedance. Good analog design practice is to place a
greater than 0.1 µF ceramic capacitor as near as possible to the VDD pin.
To further improve the noise immunity on the SENSE pins, placing a 10 nF to 100 nF capacitor between the
SENSE pin and GND can reduce the sensitivity to transient voltages on the monitored signal.
If a capacitor is used on CTS or CTR, place these components as close as possible to the respective
pins. If the capacitor adjustable pins are left unconnected, make sure to minimize the amount of parasitic
capacitance on the pins to less than 5 pF.
For open-drain variants, place the pull-up resistors on RESET as close to the pin as possible.
When laying out metal traces, separate high voltage traces from low voltage traces as much as possible. If
high and low voltage traces need to run close by, spacing between traces should be greater than 20 mils (0.5
mm).
Do not have high voltage metal pads or traces closer than 20 mils (0.5 mm) to the low voltage metal pads or
traces.
11.2 Layout Example
The layout example in Figure 11-1 shows how the TPS3760 is laid out on a printed circuit board (PCB) with
user-defined delays.
CVDD
1
VDD
NC
14
2
NC
13
GND
TPS3760
3
Monitored Voltage
12
NC
NC
DYY Package
NC
4
11
NC
5
10
6
9
7
8
CSENSE
GND
Reset Flag
NC
GND
RPU
VPULL-UP
Vias used to connect pins for application-specific connections
Figure 11-1. TPS3760 Recommended Layout
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11.3 Creepage Distance
Per IEC 60664 Creepage is the shortest distance between two conductive parts or as shown in Figure 11-2 the
distance between high voltage conductive parts and grounded parts, the floating conductive part is ignored and
subtracted from the total distance.
b
a
A
B
C
Figure 11-2. Creepage Distance
Figure 11-2 details
•
•
•
•
34
A = Left pins (high voltage)
B = Central pad (conductive not internally connected, can be left floating or connected to GND)
C = Right pins (low voltages)
Creepage distance = a + b
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12 Device and Documentation Support
12.1 Device Nomenclature
Section 5 shows how to decode the function of the device based on its part number
Table 12-1 shows possible voltage options per channel. Contact TI sales representatives or on TI's E2E forum
for details and availability of other options; minimum order quantities apply.
Table 12-1. Voltage Options
100 mV STEPS
400 mV STEPS
500 mV STEPS
1 V STEPS
NOMENCLATURE
VOLTAGE
OPTIONS
NOMENCLATURE
VOLTAGE
OPTIONS
NOMENCLATURE
VOLTAGE
OPTIONS
NOMENCLATURE
VOLTAGE
OPTIONS
NOMENCLATURE
VOLTAGE
OPTIONS
01
800 mV
(divider
bypass)
70
7.0 V
A0
10.4 V
D0
20.5 V
F0
31.0 V
27
2.7 V
71
7.1 V
A1
10.8 V
D1
21.0 V
F1
32.0 V
28
2.8 V
72
7.2 V
A2
11.2 V
D2
21.5 V
F2
33.0 V
29
2.9 V
73
7.3 V
A3
11.6 V
D3
22.0 V
F3
34.0 V
30
3.0 V
74
7.4 V
A4
12.0 V
D4
22.5 V
F4
35.0 V
31
3.1 V
75
7.5 V
A5
12.4 V
D5
23.0 V
F5
36.0 V
32
3.2 V
76
7.6 V
A6
12.8 V
D6
23.5 V
33
3.3 V
77
7.7 V
A7
13.2 V
D7
24.0 V
34
3.4 V
78
7.8 V
A8
13.6 V
D8
24.5 V
35
3.5 V
79
7.9 V
A9
14.0 V
D9
25.0 V
36
3.6 V
80
8.0 V
B0
14.4 V
E0
25.5 V
37
3.7 V
81
8.1 V
B1
14.8 V
E1
26.0 V
38
3.8 V
82
8.2 V
B2
15.2 V
E2
26.5 V
39
3.9 V
83
8.3 V
B3
15.6 V
E3
27.0 V
40
4.0 V
84
8.4 V
B4
16.0 V
E4
27.5 V
41
4.1 V
85
8.5 V
B5
16.4 V
E5
28.0 V
42
4.2 V
86
8.6 V
B6
16.8 V
E6
28.5 V
43
4.3 V
87
8.7 V
B7
17.2 V
E7
29.0 V
44
4.4 V
88
8.8 V
B8
17.6 V
E8
29.5 V
45
4.5 V
89
8.9 V
B9
18.0 V
E9
30.0 V
46
4.6 V
90
9.0 V
C0
18.4 V
47
4.7 V
91
9.1 V
C1
18.8 V
48
4.8 V
92
9.2 V
C2
19.2 V
49
4.9 V
93
9.3 V
C3
19.6 V
50
5.0 V
94
9.4 V
C4
20.0 V
51
5.1 V
95
9.5 V
52
5.2 V
96
9.6 V
53
5.3 V
97
9.7 V
54
5.4 V
98
9.8 V
55
5.5 V
99
9.9 V
56
5.6 V
00
10.0 V
57
5.7 V
58
5.8 V
59
5.9 V
60
6.0 V
61
6.1 V
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Table 12-1. Voltage Options (continued)
100 mV STEPS
NOMENCLATURE
VOLTAGE
OPTIONS
62
6.2 V
63
6.3 V
64
6.4 V
65
6.5 V
66
6.6 V
67
6.7 V
68
6.8 V
69
6.9 V
NOMENCLATURE
400 mV STEPS
VOLTAGE
OPTIONS
NOMENCLATURE
VOLTAGE
OPTIONS
500 mV STEPS
NOMENCLATURE
VOLTAGE
OPTIONS
1 V STEPS
NOMENCLATURE
VOLTAGE
OPTIONS
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
36
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PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS3760A012DYYR
ACTIVE
SOT-23-THIN
DYY
14
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
A012
Samples
TPS3760E012DYYR
ACTIVE
SOT-23-THIN
DYY
14
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
E012
Samples
TPS3760E565DYYR
ACTIVE
SOT-23-THIN
DYY
14
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
E565
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of