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TPS43060EVM-199

TPS43060EVM-199

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    Module

  • 描述:

    EVALUATION BOARD FOR TPS43060

  • 数据手册
  • 价格&库存
TPS43060EVM-199 数据手册
User's Guide SLVU828A – January 2013 – Revised June 2014 Using the TPS43060 Boost Evaluation Module (EVM) This user's guide contains information for the TPS43060EVM-199 evaluation module (PWR199) including the performance specifications, schematic, and the bill of materials. 1 2 3 4 Contents Introduction ................................................................................................................... 3 Test Setup and Results ..................................................................................................... 7 Bill of Materials ............................................................................................................. 13 Board Layout ................................................................................................................ 14 List of Figures 1 TPS43060EVM-199 Schematic ............................................................................................ 5 2 Efficiency Versus Load Current ............................................................................................ 8 3 Light Load Efficiency Versus Load Current 4 5 6 7 8 9 10 11 12 13 14 15 16 .............................................................................. 8 Regulation Versus Output Current ........................................................................................ 8 Regulation Versus Input Voltage .......................................................................................... 8 Load Transient Response ................................................................................................. 9 Loop Response .............................................................................................................. 9 Output Voltage Ripple CCM ............................................................................................. 10 Output Voltage Ripple DCM ............................................................................................. 10 Output Voltage Ripple Pulse Skip Mode ................................................................................ 10 Input Voltage Ripple CCM ................................................................................................ 11 Input Voltage Ripple DCM ................................................................................................ 11 Start Up Relative to VIN ................................................................................................... 11 Start Up Relative to EN .................................................................................................... 11 Shutdown Relative to VIN .................................................................................................. 12 Shutdown Relative to EN .................................................................................................. 12 SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Using the TPS43060 Boost Evaluation Module (EVM) Copyright © 2013–2014, Texas Instruments Incorporated 1 www.ti.com 17 Gate-Drive Signals ......................................................................................................... 12 18 TPS43060EVM-199 Top Assembly and Silkscreen ................................................................... 14 19 TPS43060EVM-199 Top-Side Layout ................................................................................... 15 20 TPS43060EVM-199 Layer 2 Layout ..................................................................................... 15 21 TPS43060EVM-199 Layer 3 Layout ..................................................................................... 16 22 TPS43060EVM-199 Bottom-Side Layout ............................................................................... 16 List of Tables 2 1 Input Voltage and Output Current Summary ............................................................................. 3 2 TPS43060EVM-199 Performance Specification Summary............................................................. 4 3 EVM Connectors and Test points 4 TPS43060EVM-199 Bill of Materials..................................................................................... 13 ......................................................................................... Using the TPS43060 Boost Evaluation Module (EVM) 7 SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Introduction www.ti.com 1 Introduction This user's guide contains background information for the TPS43060 as well as support documentation for the TPS43060EVM-199 evaluation module (PWR199). Also included are the performance specifications, schematic, and the bill of materials for the EVM. 1.1 Background The TPS43060 is a DC-DC synchronous boost controller designed for a maximum output voltage of 58 V from an input voltage source of 4.5 V to 38 V. It has a 7.5-V gate-drive supply optimized for use with standard threshold MOSFETs. Rated input voltage and output current range for the evaluation module are given in Table 1. This evaluation module is designed to demonstrate the high efficiency and high power possible when designing with the TPS43060 controller. The switching frequency is externally set at a nominal 300 kHz. The gate-drive circuitry for the external high-side and low-side FET is incorporated inside the TPS43060 package. PWR199 uses the Infineon BSC123N08NS3G for both the high-side and low-side MOSFETs. External inductor DCR or resistor current sensing allows for an adjustable cycle-bycycle current limit. The compensation components are external to the integrated circuit (IC), and an external resistor divider allows for an adjustable output voltage. Additionally, the TPS43060 provides an adjustable undervoltage lockout with hysteresis through an external resistor divider, adjustable slow-start time with an external capacitor and a power good output voltage indicator. The absolute maximum input voltage for the PWR199 is 38 V. Table 1. Input Voltage and Output Current Summary EVM Input Voltage Range Output Current Range TPS43060EVM-199 VIN = 10 V to 38 V IOUT = 0 A to 3 A SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Using the TPS43060 Boost Evaluation Module (EVM) Copyright © 2013–2014, Texas Instruments Incorporated 3 Introduction 1.2 www.ti.com Performance Specification Summary A summary of the EVM performance specifications is provided in Table 2. Specifications are given for an input voltage of VIN = 24 V and an output voltage of 40 V, unless otherwise specified. This EVM is designed and tested for VIN = 10 V to 38 V. The ambient temperature is 25°C for all measurements, unless otherwise noted. Table 2. TPS43060EVM-199 Performance Specification Summary Specification Test Conditions VIN voltage range MIN TYP MAX 10 24 38 Output voltage set point 40 V V Output current range VIN = 15 V to 38 V 0 3 A Output current range VIN = 10 V 0 2 A Line regulation VIN = 10 V to 35 V, IOUT = 2 A ±0.1% Load regulation IOUT = 0.001 A to 3 A ±0.1% Load transient response IOUT = 0.75 A to 2.25 A Voltage change Recovery time IOUT = 2.25 A to 0.75 A Voltage change Recovery time –700 mV 1 ms 600 mV 1 ms 4.7 kHz Loop bandwidth IOUT = 3 A Phase margin IOUT = 3 A 64 ° Input voltage ripple IOUT = 3 A 100 mVpp Output voltage ripple IOUT = 3 A 350 mVpp Output rise time Operating frequency Peak efficiency 4 Unit IOUT = 3 A 25 ms 300 kHz 97.7% DCM threshold 660 mA Pulse skipping threshold 3.5 mA No load input current 1.3 mA UVLO start threshold 9.66 V UVLO stop threshold 7.92 V Using the TPS43060 Boost Evaluation Module (EVM) SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Introduction www.ti.com 1.3 Schematic Figure 1 is the schematic for the EVM. R16 10m J5 VIN VIN R17 VIN: 10V-38V 10m TP8 2 L1 R18 15uH J6 VIN 1 GND 2 + TP9 C13 1 C14 C15 C16 10uF 10uF 10uF 1 R14 10 R13 10 R15 1 ISNS- ISNS+ J7 J1 GND TP2 R2 VCC D TP4 G TP5 2 C2 C3 C4 3 10uF 10uF 10uF R4 3 FB R7 4 SS HDRV FB BOOT VCC PGND 12.1k 0.1uF 1500pF 6 7 8 D1 11 68uF J3 G TP6 R6 GND 49.9 S R19 2.0 VCC C10 C6 R8 1 348k FB C12 100pF R12 GND 1 Q2 BSC123N08NS3G 9 R9 R10 VIN VOUT 1 C17 + 4.7uF 5 C9 + TP7 12 10 C5 2 D 0.1uF SW U1 TPS43060RTE COMP C8 0.033uF EN RT/CLK LDRV 2 C1 13 VIN 1 C7 AGND PWPD 191k 14 15 PGOOD 17 16 R5 47.5k ISNS+ OFF TP3 J2 ISNS- EN Q1 BSC123N08NS3G 100k 357k 1 ON TP1 S JP1 0 R1 VIN R3 VOUT 40V @ 3A 1 0 11.0k C11 0.1uF R11 J4 ISNS- ISNS+ 0 1 Not Populated 2 For DCR sensing, open R14 and short R15, R16, R17 and R18. For resistor sensing, open R15. For Split Rail application, open R11. VBIAS (OPTIONAL) Figure 1. TPS43060EVM-199 Schematic 1.4 Modifications The EVM is designed to provide access to the features of the TPS43060. Some modifications can be made to this module. For further details please see the product data sheet. 1.4.1 Output Voltage Set Point To change the output voltage of the EVM, it is necessary to change the value of resistor R8. The value of R8 for a specific output voltage can be calculated using Equation 1, where RHS is R8, RLS is R9 and VFB is 1.22 V. It is recommended to use a value of R9 near 10 kΩ. V  VFB RHS RLS u OUT VFB (1) Note: VIN must be in a range so the minimum on-time is greater than the typical 100 ns and the minimum off-time is greater than the largest of typical 250 ns and 5% of the switching period. SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Using the TPS43060 Boost Evaluation Module (EVM) Copyright © 2013–2014, Texas Instruments Incorporated 5 Introduction 1.4.2 www.ti.com Current Sensing The default configuration of the EVM is for resistor current sensing. R13 and R14 are populated with R15 open. When adjusting the input voltage, output voltage or desired maximum output voltage, the current sense resistors R16 and R17 may need to be adjusted. The peak inductor current should first be calculated with Equation 2. Equation 3 is then used to calculate the required current sense resistor where VCStyp is the current sense threshold. VCStyp should be determined from the TPS43060 data sheet with the maximum duty cycle in the application. Ensure the current sense resistor is rated for the expected power dissipation. For inductor DCR current sensing, R14 should be left open while R15, R16, R17 and R18 are shorted. V  VIN min VIN minu OUT IOUT VOUT ILpeak  V  VIN min 2 u L u fSW 1  OUT VOUT (2) RCS 1.4.3 VCS typ 1.2 u ILpeak (3) Slow-Start Time Adjust the slow-start time by changing the value of C7. Equation 4 can be used to calculate the required capacitance based on a desired slow-start time, tSS. ISS is the charging current of 5-µA typical and VREF is the internal reference voltage of 1.22 V. The EVM is set for a slow-start time of 25 ms using C7 = 0.1 µF. t SS u ISS CSS VREF (4) 1.4.4 Adjustable UVLO The undervoltage lockout (UVLO) can be adjusted externally using R3 and R4. The EVM is set for a start voltage of 9.66 V and stop voltage of 7.92 V, using R3 = 357 kΩ and R4 = 47.5 kΩ. Use Equation 5 and Equation 6 to calculate the required resistor values for R3 and R4, respectively, for different start and stop voltages. The typical values of the constants in the two equations are as follows: VEN_DIS = 1.14 V, VEN_ON = 1.21 V, IEN_pup = 1.8 µA, and IEN_hys = 3.2 µA. § VEN _ DIS · VSTART u ¨ ¸  VSTOP ¨ VEN _ ON ¸ © ¹ RUVLO_ H § VEN _ DIS · IEN _ pup u ¨ 1  ¸ I ¨ VEN _ ON ¸¹ EN _ hys © (5) RUVLO_ H u VEN _ DIS RUVLO_ L VSTOP  VEN _ DIS  RUVLO _ H u IEN _ pup  IEN _ hys 1.4.5 (6) Input Voltage Rails The EVM is designed to accommodate different input voltage levels for the power stage and control logic. In the default configuration, the VIN inputs connected with R11 populated with a 0-Ω resistor. The input voltage is supplied to J6. If desired, the two input voltage rails may be separated by unpopulating R11. The control logic input voltage can be supplied to J4 and the power stage input voltage to J6. 1.4.6 Further Modification Changing the input and output of conditions of the EVM will impact the design. It may also be necessary to modify the inductor, output capacitor and compensation components for the desired performance in the application. Please see the data sheet or the excel design spreadsheet located in the product folder for details. 6 Using the TPS43060 Boost Evaluation Module (EVM) SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Test Setup and Results www.ti.com 2 Test Setup and Results This section describes how to properly connect, set up, and use the EVM. The section also includes test results typical for the EVM covering efficiency, output voltage regulation, load transients, loop response, output ripple, input ripple, start up and shutdown. 2.1 Input/Output Connections This EVM includes I/O connectors and test points as shown in Table 3. A power supply capable of supplying at least 12 A must be connected to J6 through a pair of 20-AWG wires. The load must be connected to J2 through a pair of 20-AWG wires. The maximum load-current capability must be 3 A. Wire lengths must be minimized to reduce losses in the wires. If any modification is done to the EVM design, an input supply and load rated for the new design are required. Test point TP8 provides a connection to monitor the VIN input voltages with TP9 providing a convenient ground reference. TP3 is used to monitor the output voltage with TP4 as the ground reference. Table 3. EVM Connectors and Test points Reference Designator Function J1 2-pin header for VOUT voltage connections J2 VOUT, 40 V at 3-A maximum J3 2-pin header for GND connections J4 2-pin header for optional VBIAS input voltage connections (see Section 1.4.5) J5 2-pin header for VIN input voltage connections J6 VIN (see Table 1 for VIN range) J7 2-pin header for GND connections JP1 3-pin header for EN jumper. Install jumper from pins 1-2 to enable or pins 2-3 to disable. TP1 PGOOD test point for power good output voltage indicator TP2 HDRV test point for high-side gate-drive voltage TP3 VOUT test point at VOUT connector TP4 GND test point at VOUT connector TP5 SW test point for switch node voltage TP6 Test point between voltage divider network and output used for loop response measurements TP7 LDRV test point for low-side gate-drive voltage TP8 VIN test point at VIN connector TP9 GND test point at VIN connector SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Using the TPS43060 Boost Evaluation Module (EVM) Copyright © 2013–2014, Texas Instruments Incorporated 7 Test Setup and Results 2.2 www.ti.com Efficiency With the nominal VIN of 24 V, the efficiency of this EVM peaks at a load current of about 3 A, and then decreases as the load current increases towards maximum load. Figure 2 shows the efficiency for the EVM up to current limit with 1-V input and up to a 5-A load with 24-V and 38-V input. Figure 3 shows the light load efficiency using a semi-log scale. Measurements are taken at ambient temperature of 25°C. The efficiency may be lower at higher ambient temperatures due to temperature variation in the drain-to-source resistance of the selected external MOSFETs. 90 96 80 94 70 Efficiency - % 100 98 Efficiency - % 100 92 90 VOUT = 40V, fsw = 300kHz 88 86 60 50 30 Vin = 10V 84 80 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Output Current - A Vin = 38V 0 0.001 5 0.01 0.1 1 Output Current - A C001 Figure 2. Efficiency Versus Load Current 2.3 Vin = 24V 10 Vin = 38V 0 Vin = 10V 20 Vin = 24V 82 VOUT = 40V, fsw = 300kHz 40 C002 Figure 3. Light Load Efficiency Versus Load Current Output Voltage Regulation The load regulation for the EVM is shown in Figure 4. The line regulation for the EVM is shown in Figure 5. Measurements are given for an ambient temperature of 25°C. 0.1 VOUT = 40V, fsw = 300kHz VIN = 24V Output VOltage Deviation - % Output Voltage Deviation - % 0.1 0.08 0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.1 0 0.5 1 1.5 2 2.5 Output Current - A VOUT = 40V, fsw = 300kHz IOUT = 2A 0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 -0.1 0 5 10 Using the TPS43060 Boost Evaluation Module (EVM) 15 20 25 30 Input Voltage - V C002 Figure 4. Regulation Versus Output Current 8 3 0.08 35 C004 Figure 5. Regulation Versus Input Voltage SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Test Setup and Results www.ti.com 2.4 Load Transients and Loop Response C4: IOUT (1.0 A/div) 60 180 40 120 Gain - dB 20 60 Phase 0 0 Gain -20 -60 -40 -120 VOUT = 40V, VIN = 24V IOUT = 3A -60 10 100 1000 10000 100000 -180 1000000 Frequency - Hz C3: VOUT ac coupled (500 mV/div) Phase - deg The EVM response to load transients is shown in Figure 6. The current step is from 25% to 75% of maximum rated load at nominal 24-V input. Total peak-to-peak voltage variation is as shown, including ripple and noise on the output. The EVM loop-response characteristics are shown in Figure 7. Gain and phase plots are shown for nominal VIN voltage of 24 V. Load current for the measurement is 3 A. C005 Figure 7. Loop Response Time: 500 µs/div Figure 6. Load Transient Response SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Using the TPS43060 Boost Evaluation Module (EVM) Copyright © 2013–2014, Texas Instruments Incorporated 9 Test Setup and Results 2.5 www.ti.com Output Voltage Ripple The EVM continuous conduction mode (CCM) output voltage ripple is shown in Figure 8. The output current is the rated full load of 3 A and nominal VIN of 24 V. The voltage ripple is measured directly across the output capacitors with a short ground lead. The discontinuous conduction mode (DCM) output voltage ripple is shown in Figure 9. The output current is 0.3 A and nominal VIN of 24 V. The pulse skip mode output voltage ripple is shown in Figure 10. There is no external load on the output and nominal VIN of 24 V. C1: SW (20.0 V/div) C1: SW (20.0 V/div) C4: IL (2.0 A/div) C4: IL (2.0 A/div) C3: VOUT ac coupled (200 mV/div) C3: VOUT ac coupled (50 mV/div) Time: 2.0 µs/div Time: 2.0 µs/div Figure 8. Output Voltage Ripple CCM Figure 9. Output Voltage Ripple DCM C1: SW (20.0 V/div) C4: IL (500 mA/div) C3: VOUT ac coupled (50 mV/div) Time: 10.0 ms/div Figure 10. Output Voltage Ripple Pulse Skip Mode 10 Using the TPS43060 Boost Evaluation Module (EVM) SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Test Setup and Results www.ti.com 2.6 Input Voltage Ripple The EVM CCM input voltage ripple is shown in Figure 11. The output current is the rated full load of 3 A and nominal VIN of 24 V. The voltage ripple is measured directly across the input capacitors. The DCM input voltage ripple is shown in Figure 12. The output current is 0.3 A and nominal VIN of 24 V. C1: SW (20.0 V/div) C1: SW (20.0 V/div) C4: IL (2.0 A/div) C4: IL (2.0 A/div) C3: VIN ac coupled (100 mV/div) C3: VIN ac coupled (100 mV/div) Time: 2.0 µs/div Time: 2.0 µs/div Figure 11. Input Voltage Ripple CCM 2.7 Figure 12. Input Voltage Ripple DCM Start Up The start up waveforms are shown in Figure 13 and Figure 14. The input voltage for these plots is the nominal 24 V and the output has a 2.5-A resistive load. In Figure 13 the input voltage supply is turned on and VIN begins rising. Both the VCC and VOUT rail initially rise with VIN. When the input reaches the undervoltage lockout threshold set by the external resistor divider, the device can begin switching and the output ramps up to the set value of 40 V with the slow-start voltage. PGOOD goes high when VOUT is in regulation. In Figure 14 the input voltage is applied with EN held low. The output voltage is a diode drop below the input voltage and VCC is disabled. When EN is released, the start up sequence begins with VCC coming into regulation and the output ramps up to the set value of 40 V. PGOOD goes high when VOUT is in regulation. C1: EN (5.00 V/div) C1: VIN (10.0 V/div) C2: VCC (5.00 V/div) C2: VCC (5.00 V/div) C3: VOUT (20.0 V/div) C3: VOUT (20.0 V/div) C4: PGOOD (5.00 V/div) C4: PGOOD (5.00 V/div) Time: 5.00 ms/div Figure 13. Start Up Relative to VIN SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Time: 5.00 ms/div Figure 14. Start Up Relative to EN Using the TPS43060 Boost Evaluation Module (EVM) Copyright © 2013–2014, Texas Instruments Incorporated 11 Test Setup and Results 2.8 www.ti.com Shutdown The shutdown waveforms are shown in Figure 15 and Figure 16. In Figure 15 the input voltage is removed, and when the input falls below the undervoltage lockout threshold set by the EN resistor divider, the TPS43060 shuts down, PGOOD is pulled low and the output falls to ground. The output has a 2.5-A resistive load. In Figure 16 the input voltage is held at 24 V with no load and EN is shorted to ground. When EN is grounded, the TPS43060 is disabled, PGOOD is pulled low and the output voltage discharges to VIN. C1: VIN (10.0 V/div) C1: EN (5.00 V/div) C3: VOUT (20.0 V/div) C2: VCC (5.00 V/div) C4: PGOOD (5.00 V/div) C3: VOUT (20.0 V/div) C4: PGOOD (5.00 V/div) Time: 5.00 ms/div Time: 5.00 ms/div Figure 15. Shutdown Relative to VIN 2.9 Figure 16. Shutdown Relative to EN Gate-Drive Signals In Figure 17 the gate-drive signals for the high-side and low-side FETs can be seen with the switching node are shown. The input voltage is 24 V and the output has a 3-A load. C2: HDRV (20.0 V/div) C1: SW (20.0 V/div) C3: LDRV (5.00 V/div) Time: 1.0 µs/div Figure 17. Gate-Drive Signals 12 Using the TPS43060 Boost Evaluation Module (EVM) SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Bill of Materials www.ti.com 3 Bill of Materials Table 4 presents the bill of materials for the EVM. Table 4. TPS43060EVM-199 Bill of Materials COUNT RefDes Value Description Size Part Number MFR 1 C5 68µF Capacitor, Aluminum, 63V, 20% 0.406 x 0.406 inch EEVFK1J680P Panasonic 1 C6 4.7µF Capacitor, Ceramic, 16V, X5R, 10% 0603 STD STD 1 C8 1200pF Capacitor, Ceramic, 10V, X5R, 10% 0603 STD STD 1 C9 0.022µF Capacitor, Ceramic, 10V, X5R, 10% 0603 STD STD 0 C10 Open Capacitor, Ceramic, 10V, X7R, 10% 0603 STD STD 1 C12 100pF Capacitor, Ceramic, 50V, X7R, 20% 0603 STD STD 3 C1 C7 C11 0.1µF Capacitor, Ceramic, 50V, X7R, 10% 0603 STD STD 5 C2-4 C14-16 10µF Capacitor, Ceramic, 50V, X7R, 10% 1210 STD STD 0 C13 C17 Open Capacitor Multi sizes Engineering Only STD 1 D1 MBR1H100SFT3G Diode, Schottky Power Rectifier, 1A, 100V SOD-123LF MBR1H100SFT3G On Semi 5 J1 J3-5 J7 PEC02SAAN Header, Male 2-pin, 100mil spacing 0.100 inch x 2 PEC02SAAN Sullins 2 J2 J6 ED120/2DS Terminal Block, 2-pin, 15-A, 5.1mm 0.40 x 0.35 inch ED120/2DS OST 1 JP1 PEC03SAAN Header, Male 3-pin, 100mil spacing 0.100 inch x 3 PEC03SAAN Sullins 1 L1 15µH Inductor, Shielded Power, 14A, 9mΩ 15.2x16.2 mm XAL1510-153 alt:74435571500 Coilcraft alt:WE 2 Q1 Q2 BSC123N08NS3G MOSFET, Nch, 80V, 55A, 12.3mΩ TDSON-8 BSC123N08NS3G Infineon 1 R1 100k Resistor, Chip, 1/16W, 1% 0603 STD STD 1 R3 357k Resistor, Chip, 1/16W, 1% 0603 STD STD 1 R4 47.5k Resistor, Chip, 1/16W, 1% 0603 STD STD 1 R5 191k Resistor, Chip, 1/16W, 1% 0603 STD STD 1 R6 49.9 Resistor, Chip, 1/16W, 1% 0603 STD STD 1 R7 15.4k Resistor, Chip, 1/16W, 1% 0603 STD STD 1 R8 348k Resistor, Chip, 1/16W, 1% 0603 STD STD 1 R9 11.0k Resistor, Chip, 1/16W, 1% 0603 STD STD 0 R18 Open Resistor, Chip, 1W, 1% 1206 STD STD 0 R12 R15 Open Resistor, Chip, 1/16W, 1% 0603 STD STD 2 R13-14 10 Resistor, Chip, 1/16W, 1% 0603 STD STD 2 R16-17 10m Resistor, Chip, 1W, 1% 1206 STD STD 3 R2 R10-11 0 Resistor, Chip, 1/16W, 1% 0603 STD STD 1 SH1 Short jumper, 100mil 0.100 inch 929950-00 3M 2 TP4 TP9 5001 Test Point, Black, Thru Hole Color Keyed 0.100 x 0.100 inch 5001 Keystone 7 TP1-3 TP5-8 5000 Test Point, Red, Thru Hole Color Keyed 0.100 x 0.100 inch 5000 Keystone 1 U1 TPS43060RTE IC, Wide VIN Current Mode Synchronous Boost Controller VQFN TPS43060RTE TI 1 -- PWR199 Any Notes: 1. These assemblies are ESD sensitive, ESD precautions shall be observed. PCB, 3.5 in x 2.1 in x 0.062 in 2. These assemblies must be clean and free from flux and all contaminants. Use of no clean flux is not acceptable. 3. These assemblies must comply with workmanship standards IPC-A-610 Class 2. 4. Ref designators marked with an asterisk ('**') cannot be substituted. All other components can be substituted with equivalent MFG's components. SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Using the TPS43060 Boost Evaluation Module (EVM) Copyright © 2013–2014, Texas Instruments Incorporated 13 Board Layout 4 www.ti.com Board Layout This section provides a description of the EVM, board layout, and layer illustrations. 4.1 Layout The board layout for the EVM is shown in Figure 18 through Figure 22. This design has 4 layers of 2-oz copper. The top layer contains the main power traces for VIN, VOUT, and SW. Also on the top layer are all other components to allow the user to easily view, probe, and evaluate the TPS43060 control IC. The remaining area is filled with ground. The remaining three layers have additional copper for VIN, VOUT, AGND, and PGND connected with multiple vias. Additional copper is also connected to the sense resistor to aid with thermal dissipation. The second internal layer and bottom layer contain signal routes. Four vias directly under the TPS43060 device provide a thermal path from the top-side ground plane to the bottom-side and internal AGND plane. Lastly, the layout guidelines should be followed for Q1 and Q2. Vias are placed near both FETs to aid with thermal dissipation. All noise-sensitive analog circuitry are placed as close as possible to the IC. The voltage divider network ties to the output voltage at the point of regulation on the bottom layer, near the output capacitors. Q1 and Q2 are placed as close as possible to the IC to keep the gate-drive traces as short as possible. The output capacitors are placed next to Q1 and Q2 to limit the length of the high frequency switching current path. The SW copper is kept as small as possible to limit radiated noise from the high-frequency switching voltage node. The power pad is connected to the AGND pin and all noise-sensitive circuitry must use this as the ground return path. The ground return for the power components are connected to the PGND pin. The AGND and PGND are connected at one point near the PGND pin. The bypass capacitors for VIN and VCC are placed next to their respective pins. The filter capacitor between ISNS+ and ISNS– is located next to the pins to help filter out switching noise. An additional input bulk capacitor may be required (C13) depending on the connection to the EVM from the input supply. See the product datasheet for all layout recommendations. TP1 TP1 J1 TPS43060EVM-199 R7 R7 U1 U1 R19 R9 R9 R12 R19 TP6 TP6 C10C10 C12C12C11C11R10 R10 LOOP R8 R8 R12 R15 R15 TP7 R6 R14 R14 R6 R13 TP7 R16 R16 LDRV TP8 TP8 VIN R17 R17 C14 C15 C16 R18 R18 VOUT C3 C4 Q2 C5 TP9 TP9 GND C17 J2 J7 GND J7 TP5 TP5 SW L1 R11 J2 C16 C15 C14 C13 GND J3 C2 C5 R13 J6 R11 C6 C13 ++ VIN C4 D1 C3 1 C17 R1 R2 R2 C1 C1 D1 Q1 R4 C7 C7 R5 R5 C9 C9 C8 C8 TP2 C6 J5 VIN 10-38V J6 1 J5 TP3 TP3 VOUT + R3 R1 PWR199 Rev. A Q1 ++ R3 R4 TP2 HDRV VOUT J1 40V @ 3A GND PGOOD C2 JP1 ON EN OFF J4 VBIAS (OPTIONAL) 1 JP1 Q2 J4 L1 TP4 TP4 GND J3 GND Figure 18. TPS43060EVM-199 Top Assembly and Silkscreen 14 Using the TPS43060 Boost Evaluation Module (EVM) SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Board Layout www.ti.com Figure 19. TPS43060EVM-199 Top-Side Layout Figure 20. TPS43060EVM-199 Layer 2 Layout SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Using the TPS43060 Boost Evaluation Module (EVM) Copyright © 2013–2014, Texas Instruments Incorporated 15 Board Layout www.ti.com Figure 21. TPS43060EVM-199 Layer 3 Layout Figure 22. TPS43060EVM-199 Bottom-Side Layout 16 Using the TPS43060 Boost Evaluation Module (EVM) SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Board Layout www.ti.com 4.2 Estimated Circuit Area The estimated printed-circuit-board area by outlining the components and the routing between them is 1.86 in2 (1202 mm2). This area does not include test points or connectors. Also note, this design uses 0603 components for easy modifications and places all components on one layer so the area can be reduced. Revision History Changes from Original (January 2013) to A Revision .................................................................................................... Page • Changed Table 4, L1 Part Number From: XAL1510-103 To: XAL1510-153..................................................... 13 NOTE: Page numbers for previous revisions may differ from page numbers in the current version. SLVU828A – January 2013 – Revised June 2014 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Revision History 17 ADDITIONAL TERMS AND CONDITIONS, WARNINGS, RESTRICTIONS, AND DISCLAIMERS FOR EVALUATION MODULES Texas Instruments Incorporated (TI) markets, sells, and loans all evaluation boards, kits, and/or modules (EVMs) pursuant to, and user expressly acknowledges, represents, and agrees, and takes sole responsibility and risk with respect to, the following: 1. User agrees and acknowledges that EVMs are intended to be handled and used for feasibility evaluation only in laboratory and/or development environments. Notwithstanding the foregoing, in certain instances, TI makes certain EVMs available to users that do not handle and use EVMs solely for feasibility evaluation only in laboratory and/or development environments, but may use EVMs in a hobbyist environment. All EVMs made available to hobbyist users are FCC certified, as applicable. Hobbyist users acknowledge, agree, and shall comply with all applicable terms, conditions, warnings, and restrictions in this document and are subject to the disclaimer and indemnity provisions included in this document. 2. Unless otherwise indicated, EVMs are not finished products and not intended for consumer use. EVMs are intended solely for use by technically qualified electronics experts who are familiar with the dangers and application risks associated with handling electrical mechanical components, systems, and subsystems. 3. User agrees that EVMs shall not be used as, or incorporated into, all or any part of a finished product. 4. User agrees and acknowledges that certain EVMs may not be designed or manufactured by TI. 5. User must read the user's guide and all other documentation accompanying EVMs, including without limitation any warning or restriction notices, prior to handling and/or using EVMs. Such notices contain important safety information related to, for example, temperatures and voltages. For additional information on TI's environmental and/or safety programs, please visit www.ti.com/esh or contact TI. 6. User assumes all responsibility, obligation, and any corresponding liability for proper and safe handling and use of EVMs. 7. 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User shall operate EVMs within TI’s recommended specifications and environmental considerations per the user’s guide, accompanying documentation, and any other applicable requirements. Exceeding the specified ratings (including but not limited to input and output voltage, current, power, and environmental ranges) for EVMs may cause property damage, personal injury or death. If there are questions concerning these ratings, user should contact a TI field representative prior to connecting interface electronics including input power and intended loads. Any loads applied outside of the specified output range may result in unintended and/or inaccurate operation and/or possible permanent damage to the EVM and/or interface electronics. Please consult the applicable EVM user's guide prior to connecting any load to the EVM output. If there is uncertainty as to the load specification, please contact a TI field representative. 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If user intends to use EVMs in evaluations of safety critical applications (such as life support), and a failure of a TI product considered for purchase by user for use in user’s product would reasonably be expected to cause severe personal injury or death such as devices which are classified as FDA Class III or similar classification, then user must specifically notify TI of such intent and enter into a separate Assurance and Indemnity Agreement. RADIO FREQUENCY REGULATORY COMPLIANCE INFORMATION FOR EVALUATION MODULES Texas Instruments Incorporated (TI) evaluation boards, kits, and/or modules (EVMs) and/or accompanying hardware that is marketed, sold, or loaned to users may or may not be subject to radio frequency regulations in specific countries. 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U.S. Federal Communications Commission Compliance For EVMs Annotated as FCC – FEDERAL COMMUNICATIONS COMMISSION Part 15 Compliant Caution This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation. Changes or modifications could void the user's authority to operate the equipment. FCC Interference Statement for Class A EVM devices This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is operated in a commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and used in accordance with the instruction manual, may cause harmful interference to radio communications. Operation of this equipment in a residential area is likely to cause harmful interference in which case the user will be required to correct the interference at its own expense. FCC Interference Statement for Class B EVM devices This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. 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Operation is subject to the following two conditions: (1) this device may not cause interference, and (2) this device must accept any interference, including interference that may cause undesired operation of the device. Concerning EVMs Including Detachable Antennas Under Industry Canada regulations, this radio transmitter may only operate using an antenna of a type and maximum (or lesser) gain approved for the transmitter by Industry Canada. To reduce potential radio interference to other users, the antenna type and its gain should be so chosen that the equivalent isotropically radiated power (e.i.r.p.) is not more than that necessary for successful communication. This radio transmitter has been approved by Industry Canada to operate with the antenna types listed in the user guide with the maximum permissible gain and required antenna impedance for each antenna type indicated. Antenna types not included in this list, having a gain greater than the maximum gain indicated for that type, are strictly prohibited for use with this device. Canada Industry Canada Compliance (French) Cet appareil numérique de la classe A ou B est conforme à la norme NMB-003 du Canada Les changements ou les modifications pas expressément approuvés par la partie responsable de la conformité ont pu vider l’autorité de l'utilisateur pour actionner l'équipement. Concernant les EVMs avec appareils radio Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio exempts de licence. L'exploitation est autorisée aux deux conditions suivantes : (1) l'appareil ne doit pas produire de brouillage, et (2) l'utilisateur de l'appareil doit accepter tout brouillage radioélectrique subi, même si le brouillage est susceptible d'en compromettre le fonctionnement. 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Use EVMs in a shielded room or any other test facility as defined in the notification #173 issued by Ministry of Internal Affairs and Communications on March 28, 2006, based on Sub-section 1.1 of Article 6 of the Ministry’s Rule for Enforcement of Radio Law of Japan, Use EVMs only after user obtains the license of Test Radio Station as provided in Radio Law of Japan with respect to EVMs, or Use of EVMs only after user obtains the Technical Regulations Conformity Certification as provided in Radio Law of Japan with respect to EVMs. Also, do not transfer EVMs, unless user gives the same notice above to the transferee. 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