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Table of Contents
User’s Guide
TPS48111Q1EVM: Evaluation Module for Smart High-Side
Driver TPS48111-Q1
ABSTRACT
This user’s guide describes the evaluation module (EVM) for the TPS48111-Q1 smart high-side driver. The
document provides EVM configuration information and test setup details for evaluating the TPS48111-Q1 device.
The EVM schematic, board layout, and bill of materials (BOM) are also included.
Cauon
Cau on Hot surface.
Contact may cause burns.
Do not touch!
Table of Contents
1 Introduction.............................................................................................................................................................................2
2 Description.............................................................................................................................................................................. 2
3 Schematic................................................................................................................................................................................3
4 General Configurations..........................................................................................................................................................4
5 Test Setup and Procedures....................................................................................................................................................5
6 EVAL Board Assembly Drawings........................................................................................................................................ 11
7 Bill Of Materials (BoM)..........................................................................................................................................................13
8 Revision History................................................................................................................................................................... 16
List of Figures
Figure 3-1. TPS48111Q1EVM: Evaluation Module Schematic.................................................................................................... 3
Figure 5-1. TPS48111Q1EVM Setup with Test Equipment..........................................................................................................5
Figure 5-2. Pre-charge Profile of the Output Capacitance (VIN = 48 V, COUT = 440 µF, No-load)............................................ 6
Figure 5-3. Start-Up Profile of Bootstrap Voltage for INP = GND................................................................................................ 7
Figure 5-4. Start-Up Profile of Bootstrap Voltage for INP = HIGH............................................................................................... 7
Figure 5-5. Turn-ON Response of TPS48111-Q1 for INP -> LOW to HIGH................................................................................ 8
Figure 5-6. Turn-OFF Response of TPS48111-Q1 for INP -> HIGH to LOW.............................................................................. 8
Figure 5-7. Overcurrent Response of TPS48111-Q1 for a Load Step from 2 A to 8 A With 5-A Overcurrent Protection
Setting...................................................................................................................................................................................... 9
Figure 5-8. Auto-Retry Response of TPS48111-Q1 for an Overcurrent Fault............................................................................. 9
Figure 5-9. Output Hot-Short Response of TPS48111-Q1 Device.............................................................................................10
Figure 6-1. TPS48111Q1EVM Board (a) Top Assembly (b) Bottom Assembly..........................................................................11
Figure 6-2. TPS48111Q1EVM Board (a) Top Layer (b) Bottom Layer....................................................................................... 11
Figure 6-3. TPS48111Q1EVM Board (a) Inner Signal Layer (b) Inner Routing Layer............................................................... 12
List of Tables
Table 2-1. TPS48111Q1EVM Evaluation Board Options and Setting.......................................................................................... 2
Table 4-1. Input and Output Connector Functionality.................................................................................................................. 4
Table 4-2. Test Points Description............................................................................................................................................... 4
Table 4-3. Jumper and LED Descriptions.................................................................................................................................... 4
Table 5-1. Default Jumper Setting for TPS48111Q1EVM Evaluation Board................................................................................5
Table 7-1. TPS48111Q1EVM Bill Of Materials...........................................................................................................................13
Trademarks
All trademarks are the property of their respective owners.
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Introduction
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1 Introduction
The TPS48111Q1EVM allows reference circuit evaluation of TI's smart high-side driver TPS48111-Q1. The
TPS48111-Q1 has an operating range of 3.5 V–80 V and has strong gate drive strength of 4 A to
enable switching parallel MOSFETs in high current designs. The controller TPS48111-Q1 can drive back-toback N-channel MOSFETs and also has a separate pre-charge driver (G) with independent control input
(INP_G) to drive large capacitive loads. The device provides two-level adjustable overcurrent protection with
adjustable circuit breaker timer, fast short-circuit protection, accurate analog current monitor output, and remote
overtemperature protection.
1.1 EVM Features
General TPS48111Q1EVM features include:
•
•
•
•
•
•
•
24-V to 60-V (typical) operation
5-A to 50-A adjustable overcurrent protection using on-board jumpers
Programmable circuit breaker timer
Bi-directional current flow capability
Load current monitoring output
Programmable auto-retry and latch options
LED status indication for overcurrent and overtemperature faults
1.2 EVM Applications
This EVM can be used for the following applications:
•
•
•
•
Circuit breaker and safety disconnect switch
Power distribution unit
e-relay
HVAC compressor module
2 Description
The TPS48111Q1EVM evaluation board enables evaluation of TPS48111-Q1 driver from TPS4811x-Q1 family.
The input power is applied between connectors T1 and T4 while T2 and T3 provide an output connection to the
load, Refer to the schematic in Figure 3-1 and EVM test setup in Figure 5-1.
D4 and D5 provide the fault indication output for the overcurrent and overtemperature faults respectively. Scaled
current of the load can be monitored at TP10.
Table 2-1. TPS48111Q1EVM Evaluation Board Options and Setting
Part Number
TPS48111Q1EVM
2
EVM Function
Smart high-side
driver with
protection and
diagnostics
Vin Range
24 V to 60 V
Vin UVLO
24 V
ENABLE
(EN/UVLO)
Active high
Overcurrent
Protection
Features
Low Setting Hi Setting
5A
50 A
Pre-charging the
output
overload protection
with auto-retry and
latch response
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Schematic
3 Schematic
Figure 3-1 illustrates the EVM schematic.
8
7
6
5
4
3
2
TP14
RS-
DNP
9
8
7
6
5
4
3
2
1
TP13
RS+
8
7
6
5
4
3
2
TP1
VIN
500µ
VIN
C18
100V
1uF
D10
T4
C4
100nF
100V
R44
24.9k
DNPC19
10nF
100V
GND
VAUX
1
INP
3
INP_G
2
TMR
9
R47 TP24
3.16k INP_G
TP26
INP_G/
GND
IMON
7
IWRN
8
R14
19
BST
I NP
PD
I NP_G
TMR
DIOD E
I MON
I WRN
I SCP
SRC
G
FLT_I
FLT_T
GND
GND
1
Q12
R41
2.21
C3
100nF
100V
9
C2
100V
220uF
D2
24V - 60V
C15
100V
220uF
T3
DNPC5
100nF
100V
18
GND
CS-
17
R8
2.21
BST
12
14
R9
15
R10
0
C6 DNPC7
470nF
470nF
25V
25V
Q14
TP5
GATE
CB70-14-CY
PGND
G
5
FLT_I/
4
FLT_T/
PGND
PGND
R4
VOUT
220
Q15
R7
VIN
3
2
SRC
R11
9.53k
220
DNPC20
100nF
100V
DNPC9
100nF
100V
6
TP25
G
PGND
R30
9.53k
0
GND
NETTIE-SMT2-W0.8L3.3(M M)
1 NT2
2
VIN
CSD1
DNP
SMCJ70A
70V
DMN10H220L-7
R48
G
C8
1nF
50V
PGND
Use EEV-FK2A221V
SRC
R15
DNP
10.0
11
PGND
R45
2.21
GATE
10.0
13
GND
2
R49
9.53k
Q2
8
7
6
5
4
3
2
TPS48111-Q1
Q16
1
2
R17
9.53k
VIN
3
Q4
1
R6
2.21
INP_G
3
INP_G
EN/U VLO
PU
1.47k
INP
CS+
CS-
GND
VAUX
R12 TP6
3.16k INP
TP7
INP/
VS
GND
DIODE 10
VIN
D11
U2
20
PGND
8
7
6
5
4
3
2
9
CB70-14-CY
T2
VOUT
9
CB70-14-CY
R5
100
R3
DNP
100
TP2
VOUT
1
C17
100V
1uF
R42
470k TP3
EN/UVLO
8
7
6
5
4
3
2
1
C16
100V
47uF
R43
DNP
0
1
24V - 60V
Q13
1
DNPC1
100V
0.01uF
9
9
R1
VOUT
CB70-14-CY
R31
DNP
9.53k
Q1
R2
T1
R16
DNP
470k
R13
DNP
0
500µ
DNP
DNP
1
Q3
C21
100V
10uF
TP15
GND
TP16
GND
TP17
GND
TP18
GND
GND
GND
GND
GND
D3
Green
NETTIE-SMT2-W0.8L3.3(M M)
1 NT1
2
GND
PGND
PGND
Current Monitor Scaling
TP9
VAUX
5V
1
3
R24
41.2k
1
D4
Red
2
C12
2.2µF
25V
1
3
5
7
3
R23
100k
VAUX
2
R19
10.0k
R20
10.0k
GND
2
1
3
5
C11
10V
1000pF
Q5
J3
DNPC10
50V
330pF
Q6
3
R18
10.0k
2
4
6
8
J2
1
VIN
1
IWRN
2
4
IMON
2
4
6
DIODE
J1
C14
680nF
Aux Power Supply and Fault Indicators
TP10
IMON
TMR
C13
68nF
Over Current Protection Setting
R25
20.0k
R26
0
R27
475k
R28
158k
1
Temperature sensing
TP8
TMR
GND
D6
R29
47.0k
5.6V
R21
3.16k
TP11
FLT_I/
FLT_I/
GND
1ms
GND
10ms
GND
GND
2.7V at 15A
2.7V at 30A
D5
Red
2
Circuit Breaker Timer Setting
PGND
R22
3.16k
TP12
FLT_T/
FLT_T/
GND
NoOCP, 5A, 15A, 5 0A
Figure 3-1. TPS48111Q1EVM: Evaluation Module Schematic
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General Configurations
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4 General Configurations
4.1 Physical Access
Table 4-1 lists the TPS48111Q1EVM Evaluation Board input and output connector functionality. Table 4-2 and
Table 4-3 describe the test point availability and the jumper functionality.
Table 4-1. Input and Output Connector Functionality
Connector
Label
T1
VIN
Description
T4
PGND
Ground connection for the power supply
T2
VOUT
Power output connector to the positive side of the load
T3
PGND
Ground connection for the load
Test Points
Label
Power input connector to the positive rail of the input power supply
Table 4-2. Test Points Description
Description
TP1
VIN
TP2
VOUT
Input power supply to the EVM
TP3
EN/UVLO
TP5
GATE
TP6
INP
Control input of main MOSFET
TP7
INP/
Inversion of control input for main MOSFET
TP8
TMR
Fault timer voltage
TP9
VAUX
Auxiliary supply to bias fault LEDs
TP10
IMON
Load current monitor
TP11
FLT_I/
Overcurrent fault output
TP12
FLT_T/
Overtemperature fault output
TP13
RS+
Positive terminal of current sense input
Output from the EVM
Enable control (active high) and undervoltage input
GATE of the external main MOSFET
TP14
RS–
Negative terminal of current sense input
TP15,
TP16, TP17, TP18
GND
GND
TP24
INP_G
TP25
G
TP26
INP_G/
Jumper
Label
J1
TMR
Fault timer setting
1-2 position sets 15-ms delay
3-4 position sets 150-ms delay
5-6 position sets the controller in latch-off mode
J2
IMON
Current scale setting
1-2 position sets 0.09 V/A
3-4 position sets 0.034 V/A
J3
IWRN
Overcurrent protection threshold setting
1-2 position sets RIWRN to short and disables the overcurrent protection
3-4 position sets 5 A
5-6 position sets 15 A
7-8 position sets 50 A
D4
(RED – LED)
D4
Fault indicator. LED turns on for overcurrent fault.
D5
(RED – LED)
D5
Fault indicator. LED turns on for overtemperature fault.
Control input of pre-charge MOSFET
GATE of the pre-charge MOSFET
Inversion of control input for pre-charge MOSFET
Table 4-3. Jumper and LED Descriptions
4
Description
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General Configurations
4.2 Test Equipment and Setup
4.2.1 Power Supplies
One adjustable power supply with 0-V to 60V- output and 0-A to 50-A output current limit.
4.2.2 Meters
One DMM minimum needed.
4.2.3 Oscilloscope
A DPO2024 or equivalent, three 10 times voltage probes, and a DC current probe.
4.2.4 Loads
One resistive load or equivalent that can tolerate up to 50-A DC load at 60 V and capable of the output short.
5 Test Setup and Procedures
Make sure the evaluation board has default jumper settings as shown in Table 5-1.
Table 5-1. Default Jumper Setting for TPS48111Q1EVM Evaluation Board
J1
J2
J3
1-2
1-2
3-4
Oscilloscope
CIN
UA M / B U H
NOITAZILITU %
BAT
F I
CL
RETNE
NUR
ER
BK
DG
AJ
T N I RP
9O
8N
7M
PLEH
DG
DG
DG
AHPLA
3U
2T
DG
TF I HS
Z Y XW
.
0V
C NB
s/bM4
Voltmeter
Positive
Positive
Power
Supply
Load
Negative
Negative
Figure 5-1. TPS48111Q1EVM Setup with Test Equipment
Follow the below instructions before starting any test and repeat again before moving to next test.
•
•
•
•
Set the power supply output (VIN) to zero volts.
Turn ON the power supply and set the power supply output (VIN) to 48 V, current limit = 50 A.
Turn OFF the power supply.
Set the jumper setting on EVM to default position as shown in Table 5-1.
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Test Setup and Procedures
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5.1 Pre-charging Functional Test
Use the following instructions to capture the pre-charging current profile:
1. First, disable both the Main MOSFETs and pre-charge FET by connecting INP (TP6) and INP_G (TP24) to
ground.
2. Set the jumper setting on EVM to default position as shown in Table 5-1.
3. Set the input supply voltage VIN to 48 V and current limit of 10 A.
4. Enable the power supply.
5. Enable the control input (INP_G at TP24) of the pre-charge MOSFET by releasing the ground connection.
6. Observe the waveform at SRC. That is, VOUT (TP2) with an oscilloscope.
Figure 5-2 shows an example of pre-charging current profile captured on the TPS48111Q1EVM Evaluation
Board.
INP_G
G
VOUT
I_IN
Figure 5-2. Pre-charge Profile of the Output Capacitance (VIN = 48 V, COUT = 440 µF, No-load)
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Test Setup and Procedures
5.2 Power-Up With EN Control
Use the following instructions to verify the power-up profile of TPS48111-Q1:
1.
2.
3.
4.
5.
6.
Remove the output capacitors of 440 µF from the board.
Disable the pre-charge path by connecting INP_G (TP24) to ground.
Connect the EN/UVLO pin (TP3) to ground and INP (TP6) to ground.
Set the input supply voltage VIN to 48 V and current limit of 10 A.
Enable the power supply.
Now, enable the EN/UVLO to HIGH to observe the start-up profile of BST, GATE and SRC when INP = GND
as shown in Figure 5-3.
7. Now, disable the controller by making EN/UVLO = LOW.
8. Connect INP (TP6) to VAUX to set INP as HIGH.
9. Now again, enable the EN/UVLO to HIGH to observe the start-up profile of BST, GATE and SRC when INP =
HIGH as shown in Figure 5-4.
EN/UVLO
BST
BST – SRC
VOUT
PU
Figure 5-3. Start-Up Profile of Bootstrap Voltage for INP = GND
EN/UVLO
BST
BST – SRC
VOUT
PU
Figure 5-4. Start-Up Profile of Bootstrap Voltage for INP = HIGH
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Test Setup and Procedures
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5.3 ON and OFF Control With INP Input
Use the following instructions to verify ON and OFF control of TPS48111-Q1:
1.
2.
3.
4.
5.
6.
Remove the output capacitors of 440 µF from the board.
Disable the pre-charge path by connecting INP_G (TP24) to ground.
Connect the INP (TP6) to ground.
Set the input supply voltage VIN to 48 V and current limit of 10 A.
Enable the power supply.
Now, toggle the INP to HIGH and then LOW to verify the turn-ON and turn-OFF response of PU/PD of
TPS48111-Q1.
Figure 5-5 and Figure 5-6 show the turn-ON and turn-OFF responses on the TPS48111Q1EVM Evaluation
Board.
INP
PU
VOUT
PU – SRC
Figure 5-5. Turn-ON Response of TPS48111-Q1 for INP -> LOW to HIGH
INP
PD
VOUT
PD – SRC
Figure 5-6. Turn-OFF Response of TPS48111-Q1 for INP -> HIGH to LOW
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Test Setup and Procedures
5.4 Overcurrent Protection Test
Use the following instructions to perform the overcurrent test on the TPS48111Q1EVM:
1.
2.
3.
4.
5.
Pre-charge theoutput voltage by following the steps in Pre-charging Functional Test.
Now, enable the control input INP (TP6) of the main MOSFETS.
Disable the pre-charge FET by connecting INP_G (TP24) to ground.
By default, the EVM is configured for 5-A overcurrent protection.
Now, load the output with rheostat or electronic load and gradually increase the load current to observe the
overload behavior of TPS48111-Q1.
6. Place jumper J3 at other settings to test at various overcurrent limits.
Figure 5-7 and Figure 5-8 show test waveforms for an overcurrent fault.
TMR
FLT_I/
PD
I_LOAD
Figure 5-7. Overcurrent Response of TPS48111-Q1 for a Load Step from 2 A to 8 A With 5-A Overcurrent
Protection Setting
TMR
FLT_I/
PD
I_LOAD
Figure 5-8. Auto-Retry Response of TPS48111-Q1 for an Overcurrent Fault
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Test Setup and Procedures
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5.5 Output Hot-Short Test
Use the following instructions to perform output the hot-short test:
1.
2.
3.
4.
Pre-charge the output voltage by following the steps in Pre-charging Functional Test.
Now, enable the control input INP (TP6) of the main MOSFETS.
Disable the pre-charge FET by connecting INP_G (TP24) to ground.
Now, short the output, That is, VOUT to GND with a shorter cable and observe the short-circuit response of
TPS48111-Q1 using an oscilloscope.
Figure 5-9 shows hot-short response of TPS48111-Q1 on TPS48111Q1EVM Evaluation Board.
PD
VOUT
FLT_I/
I_LOAD
Figure 5-9. Output Hot-Short Response of TPS48111-Q1 Device
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EVAL Board Assembly Drawings
6 EVAL Board Assembly Drawings
6.1 PCB Drawings
Figure 6-1 shows component placement of the EVAL Board, and Figure 6-2 and Figure 6-3 show PCB layout
images.
(a)
(b)
Figure 6-1. TPS48111Q1EVM Board (a) Top Assembly (b) Bottom Assembly
(a)
(b)
Figure 6-2. TPS48111Q1EVM Board (a) Top Layer (b) Bottom Layer
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EVAL Board Assembly Drawings
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(a)
(b)
Figure 6-3. TPS48111Q1EVM Board (a) Inner Signal Layer (b) Inner Routing Layer
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Bill Of Materials (BoM)
7 Bill Of Materials (BoM)
Table 7-1 lists the EVM BoM.
Table 7-1. TPS48111Q1EVM Bill Of Materials
Designator
Quantity
Description
Part Number
Manufacturer
!PCB1
1
Printed Circuit Board
PSIL180
Any
C2, C15
2
CAP, AL, 220 uF, 100 V, +/- 20%, 0.153 ohm, AECQ200 Grade 2, SMD
EEV-FK2A221M
Panasonic
C3, C4
2
CAP, CERM, 0.1 uF, 100 V, +/- 10%, X7R, AECQ200 Grade 1, 0805
CGA4J2X7R2A104K125AA
TDK
C6
1
CAP, CERM, 0.47 uF, 25 V, +/- 10%, X7R, AECQ200 Grade 1, 0603
CGA3E3X7R1E474K080AB
TDK
C8
1
CAP, CERM, 1000 pF, 50 V, +/- 5%, X7R, 0805
C0805C102J5RACTU
Kemet
C11
1
CAP, CERM, 1000 pF, 10 V,+/- 10%, X7R, 0402
0402ZC102KAT2A
AVX
C12
1
CAP, CERM, 2.2 µF, 25 V,+/- 10%, X7R, AEC-Q200
Grade 1, 0805
GCM21BR71E225KA73L
MuRata
C13
1
CAP, CERM, 0.068 uF, 100 V, +/- 10%, X7R, 0805
C0805C683K1RACTU
Kemet
C14
1
CAP, CERM, 0.68 uF, 50 V, +/- 10%, X7R, 0805
C0805C684K5RACTU
Kemet
C16
1
CAP, AL, 47 uF, 100 V, +/- 20%, 0.32 ohm, AECQ200 Grade 2, SMD, SMT Radial H13
EEV-FK2A470Q
Panasonic
C17, C18
2
CAP, CERM, 1 uF, 100 V, +/- 10%, X7R, 1812
C4532X7R2A105K230KA
TDK
C21
1
CAP, CERM, 10 uF, 100 V, +/- 20%, X7R, 2220
22201C106MAT2A
AVX
D2
1
Diode, Schottky, 100 V, 2 A, SMB
SS2H10-E3/5BT
Vishay-Semiconductor
D3
1
LED, 0805, Green, SMD
LTST-C170KGKT
Lite-On
D4, D5
2
LED, Red, 0805, SMD
LTST-C170KRKT
Lite-On
D6
1
Diode, Zener, 5.6 V, 300 mW, AEC-Q101, SOD-323
SZMM3Z5V6ST1G
ON Semiconductor
D10, D11
2
Diode, Schottky, 100 V, 0.25 A, SOD-123F
BAT46WH,115
Nexperia
H1, H2, H3, H4
4
Machine Screw, Round, #4-40 x 1/4, Nylon, Philips
panhead
NY PMS 440 0025 PH
B&F Fastener Supply
H5, H6, H7, H8
4
Standoff
1902C
Keystone
J1
1
Header, 100mil, 3x2 3x2, Tin, TH
PEC03DAAN
Sullins Connector Solutions
J2
1
Header, 100mil, 2x2, Tin, TH
PEC02DAAN
Sullins Connector Solutions
J3
1
Header, 100mil, 4x2, Tin, TH
PEC04DAAN
Sullins Connector Solutions
SLUUCK8A – DECEMBER 2021 – REVISED DECEMBER 2022
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TPS48111Q1EVM: Evaluation Module for Smart High-Side Driver TPS48111-Q1
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13
Bill Of Materials (BoM)
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Table 7-1. TPS48111Q1EVM Bill Of Materials (continued)
Designator
Quantity
Description
Part Number
Manufacturer
Q1, Q2, Q12, Q14
4
N-Channel 80V 300A (Tc) 375W (Tc) Surface Mount
PG-HSOG-8-1
IAUS300N08S5N012ATMA1
Infineon
Q4, Q16
2
MOSFET, N-CH, 60 V, 0.115 A, SOT-323
2N7002W-7-F
Diodes Inc.
Q5
1
Transistor, NPN, 160 V, 0.3 A, SOT-23
PMBT5551,215
Nexperia
Q6
1
Transistor, NPN, 40 V, 0.2 A, SOT-23
MMBT3904
Fairchild Semiconductor
Q15
1
MOSFET, N-CH, 100 V, 1.4 A, SOT-23
DMN10H220L-7
Diodes Inc.
R1
1
Res Metal Strip 3921 0.0005 Ohm 1% 3W
±175ppm/°C Molded SMD SMD Embossed, 3921
Plastic T/R
WSL3921L5000FEA
Vishay Dale
R4, R7
2
RES, 220, 1%, 1 W, AEC-Q200 Grade 0, 2512
CRCW2512220RFKEG
Vishay-Dale
R5
1
RES, 100, 1%, 0.125 W, AEC-Q200 Grade 0, 0805
CRCW0805100RFKEA
Vishay-Dale
R6, R8, R41, R45
4
RES, 2.21, 1%, 0.1 W, 0603
RC0603FR-072R21L
Yageo
R9
1
RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
CRCW06030000Z0EA
Vishay-Dale
R10
1
RES, 10.0, 1%, 0.25 W, AEC-Q200 Grade 0, 0603
CRCW060310R0FKEAHP
Vishay-Dale
R11, R17, R30, R49
4
RES, 9.53 k, 1%, 0.1 W, 0603
RC0603FR-079K53L
Yageo
R12, R21, R22, R47
4
RES, 3.16 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603
CRCW06033K16FKEA
Vishay-Dale
R14
1
RES, 1.47 k, 0.1%, 0.1 W, 0603
RT0603BRD071K47L
Yageo America
R18, R19, R20
3
RES, 10.0 k, 1%, 0.125 W, AEC-Q200 Grade 0, 0805 ERJ-6ENF1002V
Panasonic
R23
1
RES, 100 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603
CRCW0603100KFKEA
Vishay-Dale
R24
1
RES, 41.2 k, 1%, 0.1 W, 0603
RC0603FR-0741K2L
Yageo
R25
1
RES, 20.0 k, 0.5%, 0.1 W, 0603
RT0603DRE0720KL
Yageo America
R26, R48
2
RES, 0, 5%, 0.1 W, 0603
ERJ-3GEY0R00V
Panasonic
R27
1
RES, 475 k, 1%, 0.1 W, 0603
RC0603FR-07475KL
Yageo
R28
1
RES, 158 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603
CRCW0603158KFKEA
Vishay-Dale
R29
1
RES, 47.0 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603
CRCW060347K0FKEA
Vishay-Dale
R42
1
RES, 470 k, 1%, 0.1 W, 0603
RC0603FR-07470KL
Yageo
R44
1
RES, 24.9 k, 1%, 0.125 W, AEC-Q200 Grade 0, 0805 CRCW080524K9FKEA
Vishay-Dale
SH-J1, SH-J2, SH-J3
3
Shunt, 100mil, Flash Gold, Black
SPC02SYAN
Sullins Connector Solutions
T1, T2, T3, T4
4
Terminal 90A Lug
CB70-14-CY
Panduit
14
TPS48111Q1EVM: Evaluation Module for Smart High-Side Driver TPS48111-Q1
Copyright © 2022 Texas Instruments Incorporated
SLUUCK8A – DECEMBER 2021 – REVISED DECEMBER 2022
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Bill Of Materials (BoM)
Table 7-1. TPS48111Q1EVM Bill Of Materials (continued)
Designator
Quantity
Description
Part Number
Manufacturer
TP1, TP2, TP9
3
Test Point, Multipurpose, Red, TH
5010
Keystone
TP3, TP5, TP6, TP8,
TP10, TP11, TP12, TP13,
TP14, TP24, TP25
11
Test Point, Multipurpose, White, TH
5012
Keystone
TP7, TP26
2
Test Point, Multipurpose, Orange, TH
5013
Keystone
TP15, TP16, TP17, TP18
4
Test Point, Multipurpose, Black, TH
5011
Keystone
U2
1
100V Smart High Side controller with Protection and
Diagnostics
PTPS48111-Q1
Texas Instruments
C1
0
CAP, CERM, 0.01 uF, 100 V, +/- 10%, X7R, 1206
12061C103KAT2A
AVX
C5, C9, C20
0
CAP, CERM, 0.1 uF, 100 V, +/- 10%, X7R, AECQ200 Grade 1, 0805
CGA4J2X7R2A104K125AA
TDK
C7
0
CAP, CERM, 0.47 uF, 25 V, +/- 10%, X7R, AECQ200 Grade 1, 0603
CGA3E3X7R1E474K080AB
TDK
C10
0
CAP, CERM, 330 pF, 50 V, +/- 10%, X7R, 0402
GRM155R71H331KA01D
MuRata
C19
0
CAP, CERM, 0.01 uF, 100 V, +/- 5%, X7R, 0805
08051C103JAT2A
AVX
D1
0
Diode, TVS, Uni, 70 V, 113 Vc, SMC
SMCJ70A
Littelfuse
FID1, FID2, FID3, FID4,
FID5, FID6
0
Fiducial mark. There is nothing to buy or mount.
N/A
N/A
Q3, Q13
0
N-Channel 80V 300A (Tc) 375W (Tc) Surface Mount
PG-HSOG-8-1
IAUS300N08S5N012ATMA1
Infineon
R2
0
Res Metal Strip 3921 0.0005 Ohm 1% 3W
±175ppm/°C Molded SMD SMD Embossed Plastic
T/R
WSL3921L5000FEA
Vishay Dale
R3
0
RES, 100, 1%, 0.5 W, AEC-Q200 Grade 0, 1206
CRCW1206100RFKEAHP
Vishay-Dale
R13, R43
0
RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603
CRCW06030000Z0EA
Vishay-Dale
R15
0
RES, 10.0, 1%, 0.125 W, 0805
RC0805FR-0710RL
Yageo America
R16
0
RES, 470 k, 1%, 0.1 W, 0603
RC0603FR-07470KL
Yageo
R31
0
RES, 9.53 k, 1%, 0.1 W, 0603
RC0603FR-079K53L
Yageo
SLUUCK8A – DECEMBER 2021 – REVISED DECEMBER 2022
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TPS48111Q1EVM: Evaluation Module for Smart High-Side Driver TPS48111-Q1
Copyright © 2022 Texas Instruments Incorporated
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Revision History
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8 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision * (June 2022) to Revision A (December 2022)
Page
• Updated TPS48111Q1EVM: Evaluation Module Schematic...............................................................................3
• Updated TPS48111Q1EVM Setup with Test Equipment.....................................................................................5
16
TPS48111Q1EVM: Evaluation Module for Smart High-Side Driver TPS48111SLUUCK8A – DECEMBER 2021 – REVISED DECEMBER 2022
Q1
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