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TPS56339
SLVSEI2A – NOVEMBER 2018 – REVISED MAY 2019
TPS56339 4.5-V to 24-V Input, 3-A Output Synchronous Buck Converter
1 Features
3 Description
•
•
•
•
•
•
•
•
•
•
•
The TPS56339 is a 4.5-V to 24-V input voltage range,
3-A synchronous buck converter. The device includes
two integrated switching MOSFETs, internal loop
compensation and 5-ms internal soft-start to reduce
component count. By employing the SOT-23 (6)
package, the device achieves the high power density
and offers small footprint on PCB.
1
•
•
•
Input voltage range: 4.5 V to 24 V
Output voltage range: 0.8 V to 16 V
3-A maximum continuous output current
Fixed 500-kHz switching frequency
Support up to 97% duty cycle
Integrated 70-mΩ and 35-mΩ MOSFETs
Typical 3-μA shutdown current
Typical 98-μA quiescent current
Internal 5-ms soft-start
Internal loop compensation for ease use
Cycle-by-cycle current limit for both high-side and
low-side MOSFETs
Non-latched UVP, UVLO and TSD protections
SOT-23 (6) package
Create a custom design using TPS56339 with the
WEBENCH® Power Designer
2 Applications
•
•
•
12-V, 19-V distributed power-bus supply
Industrial applications
– Video surveillance and security systems
– Appliance
Consumer application
– Digital TV and LCD monitors
– Wireless and intelligent speakers
The TPS56339 employs Advanced Emulated Current
Mode (AECM) control that can get fast transient
response with fixed frequency. The internal adaptive
loop adjustment eliminates the need for external
compensation over a wide voltage output range.
Cycle-by-cycle current limit on the high-side protects
the device in current overload conditions and is
enhanced by a low-side sourcing current limit which
prevents current runaway. Hiccup protection will be
triggered under undervoltage and thermal shutdown
protections.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TPS56339
SOT-23 (6)
1.60 mm × 2.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
TPS56339 Efficiency
Simplified Schematic
100
TPS56339
6 Rboot
3
VIN
VIN
95
BOOT
Cin
Cboot
90
Lo
2
GND
Rfb1
5
EN
4
EN
85
VOUT
SW
FB
Co
Rfb2
Efficiency (%)
1
80
75
70
65
60
Vin=12V, Vout=5V
Vin=19V, Vout=5V
Vin=12V, Vout=3.3V
Vin=19V, Vout=3.3V
55
50
45
0.001
0.01
0.1
Load Current (A)
1
5
Eff-
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS56339
SLVSEI2A – NOVEMBER 2018 – REVISED MAY 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
5
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Timing Requirements ................................................
Typical Characteristics ..............................................
Detailed Description .............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ....................................... 10
7.3 Feature Description................................................. 11
7.4 Device Functional Modes........................................ 14
7.5 Light-Load Operation .............................................. 14
8
Application and Implementation ........................ 15
8.1 Application Information............................................ 15
8.2 Typical Application ................................................. 15
9 Power Supply Recommendations...................... 21
10 Layout................................................................... 22
10.1 Layout Guidelines ................................................. 22
10.2 Layout Example .................................................... 22
11 Device and Documentation Support ................. 24
11.1
11.2
11.3
11.4
11.5
11.6
Receiving Notification of Documentation Updates
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
24
24
24
24
24
24
12 Mechanical, Packaging, and Orderable
Information ........................................................... 24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (November 2018) to Revision A
•
2
Page
Changed marketing status from Advance Information to initial release. ................................................................................ 1
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SLVSEI2A – NOVEMBER 2018 – REVISED MAY 2019
5 Pin Configuration and Functions
DDC Package
6-Pin SOT
Top View
GND
1
6
BOOT
SW
2
5
EN
VIN
3
4
FB
Pin Functions
PIN
I/O (1)
DESCRIPTION
NAME
NO.
BOOT
6
O
A 30-Ω boot resistor and a 0.1-μF bootstrap cap are required between BOOT and SW. The
voltage on this cap carries the gate drive voltage for the high-side MOSFET.
EN
5
I
Enable pin. Float to enable. Adjust the input undervoltage lockout with two resistors.
FB
4
I
Converter feedback input. Connect to output voltage with feedback resistor divider.
GND
1
G
Ground pin. Source terminal of low-side MOSFET as well as the ground terminal for
controller circuit. Connect sensitive FB to this GND at a single point.
SW
2
O
Switch node connection between high-side MOSFET and low-side MOSFET.
VIN
3
I
Input voltage supply pin. The drain terminal of high-side MOSFET.
(1)
I = Input, O = Output, G = GND
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6 Specifications
6.1 Absolute Maximum Ratings
Over the recommended operating junction temperature range of –40°C to +125°C (unless otherwise noted) (1)
Input voltages
Output voltages
MIN
MAX
VIN
–0.3
26
EN
–0.3
6
BOOT
–0.3
SW+6
FB
–0.3
6
BOOT-SW
–0.3
6
SW
–0.3
26
–3
26
SW ( 5V.
The COUT_E is the effective value after derating, the value of L1·COUT_E should be within in the range.
The capacitor value and ESR determines the amount of output voltage ripple. TheTPS56339 is intended for use
with ceramic or other low ESR capacitors. Use Equation 15 to determine the required RMS current rating for the
output capacitor.
ICORMS
VOUT ˜ (VIN_MAX
VOUT )
12 ˜ VIN_MAX ˜ L1 ˜ fSW
(15)
For this design two Murata GRM21BR61C226ME44 22-uF, 0805, 16-V output capacitors are used. From the
data sheet the estimated DC derating of 51.8% at room temperature with AC voltage of 0.2V. The total output
effective capacitance is approximately 22.8 μF. The value of L1·COUT_E is 127.7 μH×μF, which is within the
recommended range.
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8.2.2.5 Input Capacitor Selection
The TPS56339 requires an input decoupling capacitor and a bulk capacitor is needed depending on the
application. TI recommends a ceramic capacitor over 10 µF for the decoupling capacitor. An additional 0.1-µF
capacitor (C3) from VIN pin to ground is recommended to provide additional high frequency filtering. The
capacitor voltage rating needs to be greater than the maximum input voltage. The capacitor must also have a
ripple current rating greater than the maximum input current ripple of the TPS56339. The input ripple current can
be calculated using Equation 16.
ICIRMS
IOUT ˜
VOUT VIN_MIN VOUT
˜
VIN_MIN
VIN_MIN
(16)
The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the
capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that
is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors
because they have a high capacitance to volume ratio and are fairly stable over temperature. The output
capacitor must also be selected with the DC bias taken into account. The capacitance value of a capacitor
decreases as the DC bias across a capacitor increases. For this example design, a ceramic capacitor with at
least a 35-V voltage rating is required to support the maximum input voltage. For this example, two Murata
GRM21BR6YA106KE43L (10-μF, 35-V, 0805, X5R) capacitors have been selected. The effective capacitance
under input voltage of 12 V for each one is 0.269 × 10 = 2.69 μF. The input capacitance value determines the
input ripple voltage of the regulator. The input voltage ripple can be calculated using Equation 17. Using the
design example values, IOUT_MAX = 3 A, CIN_E = 2 × 2.69 = 5.38 μF, fSW = 500 kHz, yields an input voltage ripple
of 279 mV and a RMS input ripple current of 1.48 A.
'VIN
IOUT _ MAX ˜ 0.25
CIN ˜ fSW
(IOUT _ MAX ˜ RESR _ MAX )
where
•
RESR_MAX is the maximum series resistance of the input capacitor
(17)
8.2.2.6 Bootstrap Capacitor Selection
A 0.1-µF ceramic capacitor must be connected between the BOOT to SW pin for proper operation. TI
recommends to use a ceramic capacitor with X5R or better grade dielectric. The capacitor must have a 10-V or
higher voltage rating. In addition, TI recommends in series one boot resistor to make the device more robust, so
a 30-Ω of R3 are required to be used between BOOT to bootstrap capacitor, C4.
8.2.3 Undervoltage Lockout Set Point
The undervoltage lockout (UVLO) can be adjusted using the external voltage divider network of R1 and R2. R1 is
connected between VIN and the EN pin of the TPS56339 and R2 is connected between EN and GND . The
UVLO has two thresholds, one for power up when the input voltage is rising and one for power down or
brownouts when the input voltage is falling. For the example design, the supply should turn on and start
switching when the input voltage increases above 6.6 V (UVLO start or enable). After the regulator starts
switching, it should continue to do so until the input voltage falls below 5.7 V (UVLO stop or disable). Equation 1
and Equation 2 can be used to calculate the values for the upper and lower resistor values. For the stop voltages
specified the nearest standard resistor value for R1 is 174 kΩ and for R2 is 36.5 kΩ.
18
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8.2.4 Application Curves
VIN = 12 V, L1= 5.6 µH, COUT = 44 µF, TA = 25 °C. (unless otherwise noted)
100
5.3
95
5.2
Output Voltage (V)
Efficiency (%)
90
85
80
75
70
65
Vin = 6.5 V
Vin = 12 V
Vin = 19 V
60
55
0.001
0.01
0.1
Load Current (A)
1
5.1
5
4.9
Vin = 6.5 V
Vin = 12 V
Vin = 19 V
4.8
4.7
0.001
5
0.01
Eff-
Figure 18. Efficiency
0.1
Load Current (A)
1
5
Load
Figure 19. Load Regulation
5.15
5.2
5
4.8
Output Voltage (V)
Output Voltage (V)
5.1
5.05
5
4.6
4.4
4.2
4
3.8
4.95
Iout = 0.03 A
Iout = 3 A
Iout = 0.5 A
Iout = 1.5 A
Iout = 3 A
3.6
4.9
3.4
6
8
10
12
14
16
18
Input Voltage (V)
20
22
24
4
4.25
Line
Figure 20. Line Regulation
4.5
4.75
5 5.25 5.5 5.75
Input Voltage (V)
6
6.25
6.5
Drop
Figure 21. Dropout Curve
70
65
Case Temperature (qC)
Vin(AC) = 200 mV/div
60
55
Vout(AC) = 50 mV/div
50
45
SW = 10 V/div
40
IL = 1 A/div
35
Vin = 12 V
Vin = 19 V
30
0.5
0.75
1
1.25
1.5 1.75 2 2.25
Load Current (A)
2.5
2.75
Time = 4 ms/div
3
Case
Figure 23. Steady State Waveforms, IOUT = 0 A
Figure 22. Case Temperature Rise vs Load Current
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VIN = 12 V, L1= 5.6 µH, COUT = 44 µF, TA = 25 °C. (unless otherwise noted)
Vin(AC) = 200 mV/div
Vout(AC) = 20 mV/div
Vin(AC) = 200 mV/div
Vout(AC) = 20 mV/div
IL = 2 A/div
IL = 1 A/div
SW = 10 V/div
SW = 10 V/div
Time = 1 µs/div
Time = 2 µs/div
Figure 24. Steady State Waveforms, IOUT = 0.3 A
Figure 25. Steady State Waveforms, IOUT = 3 A
Vout(AC) = 100 mV/div
Vout(AC) = 100 mV/div
Iout = 2 A/div
Iout = 2 A/div
Time = 100 s/div
Time = 100 s/div
Figure 26. Transient Response 1.5 to 3 A
Figure 27. Transient Response 0.3 to 2.7 A
Vin = 10 V/div
Vin = 10 V/div
Vout = 5 V/div
Vout = 5 V/div
IL = 2 A/div
IL = 2 A/div
SW = 5 V/div
Time = 2 ms/div
Figure 28. Startup Relative to VIN
20
SW = 5 V/div
Time = 800 µs/div
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Figure 29. Shutdown Relative to VIN
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VIN = 12 V, L1= 5.6 µH, COUT = 44 µF, TA = 25 °C. (unless otherwise noted)
Ven = 5 V/div
Ven = 5 V/div
Vout = 5 V/div
Vout = 5 V/div
IL = 2 A/div
IL = 2 A/div
SW = 10 V/div
Time = 2 ms/div
SW = 10 V/div
Time = 200 µs/div
Figure 30. Enable Relative to EN
Figure 31. Disable Relative to EN
Vin = 10 V/div
Vin = 10 V/div
Vout = 5 V/div
Vout = 5 V/div
IL = 5 A/div
IL = 5 A/div
SW = 10 V/div
SW = 10 V/div
Time = 20 ms/div
Time = 20 ms/div
Figure 33. Short Recovery
Figure 32. Short Protection
9 Power Supply Recommendations
The devices are designed to operate from an input voltage supply range between 4.5 V and 24 V. This input
supply must be well regulated. If the input supply is located more than a few inches from the device or converter,
additional bulk capacitance may be required in addition to the ceramic bypass capacitor. An electrolytic capacitor
with a value of 47 μF is a typical choice. The 0.1-µF ceramic bypass capacitor should be as close as possible to
VIN and GND pins.
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10 Layout
10.1 Layout Guidelines
1. VIN and GND traces should be as wide as possible to reduce trace impedance. The wide areas are also of
advantage from the view point of heat dissipation.
2. The input capacitor and output capacitor should be placed as close to the device as possible to minimize
trace impedance.
3. The 0.1-µF ceramic bypass capacitor should be as close as possible to VIN and GND pins.
4. Provide sufficient vias for the input capacitor and output capacitor.
5. Keep the SW trace as physically short and wide as practical to minimize radiated emissions.
6. Do not allow switching current to flow under the device.
7. A separate VOUT path should be connected to the upper feedback resistor.
8. Make a Kelvin connection to the GND pin for the feedback path.
9. Voltage feedback loop should be placed away from the high-voltage switching trace, and preferably has
ground shield.
10. The trace of the VFB node should be as small as possible to avoid noise coupling.
11. The GND trace between the output capacitor and the GND pin should be as wide as possible to minimize its
trace impedance.
10.2 Layout Example
Figure 34. TPS56339 Top Layout Example
22
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Layout Example (continued)
Figure 35. TPS56339 Bottom Layout Example
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11 Device and Documentation Support
11.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to order now.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
24
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PACKAGE OPTION ADDENDUM
www.ti.com
21-Apr-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS56339DDCR
ACTIVE
SOT-23-THIN
DDC
6
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
T6339
TPS56339DDCT
ACTIVE
SOT-23-THIN
DDC
6
250
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
T6339
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of