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TPS61010, TPS61011, TPS61012, TPS61013, TPS61014, TPS61015, TPS61016
SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
TPS6101x High-Efficiency, 1-Cell and 2-Cell Boost Converters
1 Features
3 Description
•
The TPS6101x devices are boost converters intended
for systems that are typically operated from a singleor dual-cell nickel-cadmium (NiCd), nickel-metal
hydride (NiMH), or alkaline battery.
1
•
•
•
•
•
•
•
•
•
•
Integrated Synchronous Rectifier for Highest
Power Conversion Efficiency (> 95%)
Start-Up Into Full Load With Supply Voltages as
Low as 0.9 V, Operating Down to 0.8 V
200-mA Output Current From 0.9-V Supply
Powersave-Mode for Improved Efficiency at Low
Output Currents
Autodischarge Allows to Discharge Output
Capacitor During Shutdown
Device Quiescent Current Less Than 50 μA
Ease-of-Use Through Isolation of Load From
Battery During Shutdown of Converter
Integrated Antiringing Switch Across Inductor
Integrated Low Battery Comparator
Micro-Small 10-Pin MSOP or 3 mm x 3 mm QFN
Package
EVM Available (TPS6101xEVM-157)
2 Applications
•
All
–
–
–
–
–
Single- or Dual-Cell Battery Operated Products
Internet Audio Players
Pager
Portable Medical Diagnostic Equipment
Remote Control
Wireless Headsets
Simplified Application Circuit
L1
CIN
7
SW
6 VBAT
VOUT
5
9
LBI
R2
OFF
OFF
COUT
R3
R1
ON 1
ON 8
LBO
10
Low Battery
Warning
TPS61016
EN
COMP
GND
4
The converter is based on a fixed frequency, current
mode, pulse-width-modulation (PWM) controller that
goes automatically into power save mode at light
load. It uses a built-in synchronous rectifier, so, no
external Schottky diode is required and the system
efficiency is improved. The current through the switch
is limited to a maximum value of 1300 mA. The
converter can be disabled to minimize battery drain.
During shutdown, the load is completely isolated from
the battery.
An autodischarge function allows discharging the
output capacitor during shutdown mode. This is
especially useful when a microcontroller or memory is
supplied, where residual voltage across the output
capacitor can cause malfunction of the applications.
When programming the ADEN-pin, the autodischarge
function can be disabled. A low-EMI mode is
implemented to reduce interference and radiated
electromagnetic energy when the converter enters
the discontinuous conduction mode. The device is
packaged in the micro-small space saving 10-pin
MSOP package. The TPS61010 is also available in a
3 mm x 3 mm 10-pin QFN package.
Device Information(1)
PART NUMBER
TPS61010
PACKAGE
VSSOP (10)
VSON (10)
BODY SIZE (NOM)
3.00 mm x 3.00 mm
TPS61011
FB
ADEN
VOUT
The converter output voltage can be adjusted from
1.5 V to a maximum of 3.3 V, by an external resistor
divider or, is fixed internally on the chip. The devices
provide an output current of 200 mA with a supply
voltage of only 0.9 V. The converter starts up into a
full load with a supply voltage of only 0.9 V and stays
in operation with supply voltages down to 0.8 V.
TPS61012
3
2
TPS61013
RC
TPS61014
CC1
CC2
VSSOP (10)
3.00 mm x 3.00 mm
TPS61015
TPS61016
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS61010, TPS61011, TPS61012, TPS61013, TPS61014, TPS61015, TPS61016
SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
9
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
4
4
4
4
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics ..........................................
Typical Characteristics ..............................................
Parameter Measurement Information ................ 11
Detailed Description ............................................ 12
9.1 Overview ................................................................. 12
9.2 Functional Block Diagram ....................................... 12
9.3 Feature Description................................................. 13
9.4 Device Functional Modes........................................ 15
10 Application and Implementation........................ 16
10.1 Application Information.......................................... 16
10.2 Typical Applications .............................................. 16
11 Power Supply Recommendations ..................... 25
12 Layout................................................................... 25
12.1 Layout Guidelines ................................................. 25
12.2 Layout Example .................................................... 25
12.3 Thermal Considerations ........................................ 27
13 Device and Documentation Support ................. 28
13.1
13.2
13.3
13.4
13.5
13.6
Device Support ....................................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
28
28
28
28
28
28
14 Mechanical, Packaging, and Orderable
Information ........................................................... 28
4 Revision History
Changes from Revision E (December 2014) to Revision F
Page
•
Moved Storage temperature range, Tstg to the Absolute Maximum Ratings .......................................................................... 4
•
Changed Handling Ratings To ESD Ratings.......................................................................................................................... 4
•
Changed RθJA = 294°C/W" To: RθJA = 161.8°C/W in Thermal Considerations .................................................................... 27
•
Changed text "maximum power dissipation is about 130 mW." To: "maximum power dissipation is about 247 mW."
in Thermal Considerations ................................................................................................................................................... 27
•
Changed Equation 8 From: = 136 mW To: = 247 mW ........................................................................................................ 27
Changes from Revision D (June 2005) to Revision E
•
2
Page
Added Pin Configuration and Functions section, Handling Rating table, Feature Description section, Device
Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout
section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information
section ................................................................................................................................................................................... 1
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SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
5 Device Comparison Table
TA
OUTPUT VOLTAGE (V)
PART NUMBER (1)
Adjustable from 1.5 to 3.3
TPS61010DGS
AIP
1.5
TPS61011DGS
AIQ
1.8
TPS61012DGS
AIR
2.5
TPS61013DGS
AIS
2.8
TPS61014DGS
AIT
3.0
TPS61015DGS
AIU
3.3
TPS61016DGS
AIV
Adjustable from 1.5 to 3.3
TPS61010DRC
AYA
–40°C to 85°C
(1)
(2)
PACKAGE (2)
MARKING DGS PACKAGE
10-Pin MSOP
10-Pin QFN
The DGS package and the DRC package are available taped and reeled. Add a R suffix to device type (for example, TPS61010DGSR
or TPS61010DRCR) to order quantities of 3000 devices per reel. The DRC package is also available in mini-reels. Add a T suffix to the
device type (for example, TPS61010DRCT) to order quantities of 250 devices per reel.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
6 Pin Configuration and Functions
DGS PACKAGE
10 PINS
(TOP VIEW)
DRC PACKAGE
10 PINS
(TOP VIEW)
EN
1
10
LBO
COMP
2
9
LBI
FB
3
8
ADEN
GND
4
7
SW
VOUT
5
6
VBAT
EN 1
10 LBO
COMP 2
9 LBI
FB 3
GND 4
VOUT 5
8 ADEN
Thermal
Pad
7 SW
6 VBAT
Pin Functions
PIN
NAME
DRG
NO.
DRC
NO.
I/O
ADEN
8
8
I
Autodischarge output. The autodischarge function is enabled if this pin is connected to VBAT, it is
disabled if ADEN is tied to GND.
COMP
2
2
I
Compensation of error amplifier. Connect an R/C/C network to set frequency response of control loop.
I
Chip-enable input. The converter is switched on if this pin is set high, it is switched off if this pin is
connected to GND.
EN
1
1
I
DESCRIPTION
Feedback input for adjustable output voltage version TPS61010. Output voltage is programmed
depending on the output voltage divider connected there. For the fixed output voltage versions, leave FBpin unconnected.
FB
3
3
GND
4
4
LBI
9
9
I
Low-battery detector input. A low battery warning is generated at LBO when the voltage on LBI drops
below the threshold of 500 mV. Connect LBI to GND or VBAT if the low-battery detector function is not
used. Do not leave this pin floating.
LBO
10
10
O
Open-drain low-battery detector output. This pin is pulled low if the voltage on LBI drops below the
threshold of 500 mV. A pullup resistor must be connected between LBO and VOUT.
SW
7
7
I
Switch input pin. The inductor is connected to this pin.
VBAT
6
6
I
Supply pin
VOUT
5
5
O
Output voltage. Internal resistor divider sets regulated output voltage in fixed output voltage versions.
Ground
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SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
Input
voltage
VBAT, VOUT, EN, LBI, FB, ADEN
–0.3
3.6
V
SW
–0.3
7
V
Voltage
LBO, COMP
–0.3
3.6
V
Operating free-air temperature range, TA
–40
85
°C
150
°C
150
°C
Maximum junction temperature, TJ
Storage temperature range, Tstg
(1)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUEMAX
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
MIN
NOM
MAX
UNIT
VI
Supply voltage at VBAT
0.8
IO
Maximum output current at VIN = 1.2 V
100
VOUT
mA
IO
Maximum output current at VIN = 2.4 V
200
mA
L1
Inductor
CI
Input capacitor
Co
Output capacitor
TJ
Operating virtual junction temperature
10
33
µH
10
10
22
–40
V
µF
47
µF
125
°C
7.4 Thermal Information
THERMAL METRIC
(1)
TPS6101x
TPS61010
DGS
DRC
UNIT
10 PINS
RθJA
Junction-to-ambient thermal resistance
161.8
43.1
RθJC(top)
Junction-to-case (top) thermal resistance
36.3
67.4
RθJB
Junction-to-board thermal resistance
82.7
18.1
ψJT
Junction-to-top characterization parameter
1.3
1.6
ψJB
Junction-to-board characterization parameter
81.1
18.2
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
5.2
(1)
4
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
7.5 Electrical Characteristics
over recommended operating free-air temperature range, VBAT = 1.2 V, EN = VBAT (unless otherwise noted)
PARAMETER
VI
TEST CONDITIONS
Minimum input voltage for
start-up
RL = 33 Ω
RL = 3 kΩ, TA = 25 °C
0.8
Input voltage once started
IO = 100 mA
0.8
Programmable output
voltage range
TPS61010, IOUT = 100 mA
1.5
VO
Output voltage
Switch current limit
1.86
TPS61013, 0.8 V < VI < VO, IO = 0 to 100 mA
2.42
2.5
2.58
V
TPS61013, 1.6 V < VI < VO, IO = 0 to 200 mA
2.42
2.5
2.58
V
TPS61014, 0.8 V < VI < VO, IO = 0 to 100 mA
2.72
2.8
2.88
V
TPS61014, 1.6 V < VI < VO, IO = 0 to 200 mA
2.72
2.8
2.88
V
TPS61015, 0.8 V < VI < VO, IO = 0 to 100 mA
2.9
3.0
3.1
V
TPS61015, 1.6 V < VI < VO, IO = 0 to 200 mA
2.9
3.0
3.1
V
TPS61016, 0.8 V < VI < VO, IO = 0 to 100 mA
3.2
3.3
3.4
V
3.2
3.3
3.4
V
100
TPS61011, once started
0.39
0.48
TPS61012, once started
0.54
0.56
TPS61013, once started
0.85
0.93
TPS61014, once started
0.95
1.01
TPS61015, once started
1
1.06
TPS61016, once started
1.07
1.13
500
520
mV
500
780
kHz
420
Maximum duty cycle
NMOS switch on-resistance
PMOS switch on-resistance
NMOS switch on-resistance
PMOS switch on-resistance
(1)
(1)
VO = 1.5 V
VO = 3.3 V
0.51
0.45
0.54
0.2
0.37
0.3
0.45
VI = 1.2 V to 1.4 V, IO = 100 mA
0.3
VI = 1.2 V; IO = 50 mA to 100 mA
0.1
(2)
V(LBI) voltage decreasing
480
500
Ω
0.4
V
520
mV
mv
0.01
LBO output low voltage
V(LBI) = 0 V, VO = 3.3 V, I(OL) = 10 µA
LBO output leakage current
V(LBI) = 650 mV, V(LBO) = VO
I(FB)
FB input bias current
(TPS61010 only)
V(FB) = 500 mV
VIL
EN and ADEN input low
voltage
0.8 V < VBAT < 3.3 V
Ω
400
10
LBI input current
Ω
%/V
ADEN = VBAT; EN = GND
LBI input hysteresis
(2)
0.37
300
Residual output voltage
after autodischarge
(1)
A
85%
Autodischarge switch
resistance
VOL
V
mA
250
Oscillator frequency
LBI voltage threshold
V
1.55
D
VIL
3.3
1.8
f
Load regulation
V
1.5
480
Line regulation
0.9
1.74
Feedback voltage
rDS(on)
0.85
UNIT
1.45
V(FB)
rDS(on)
MAX
TPS61012, 0.8 V < VI < VO, IO = 0 to 100 mA
TPS61016, 1.6 V < VI < VO, IO = 0 to 200 mA
I(SW)
TYP
TPS61011, 0.8 V < VI < VO, IO = 0 to 100 mA
Maximum continuous output VI > 0.8 V
current
VI > 1.8 V
IO
MIN
0.03
0.04
0.01
0.2
V
0.03
µA
0.03
0.2 × VBAT
V
Line and load regulation is measured as a percentage deviation from the nominal value (i.e., as percentage deviation from the nominal
output voltage). For line regulation, x %/V stands for ±x% change of the nominal output voltage per 1-V change on the input/supply
voltage. For load regulation, y% stands for ±y% change of the nominal output voltage per the specified current change.
For proper operation the voltage at LBI may not exceed the voltage at VBAT.
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Electrical Characteristics (continued)
over recommended operating free-air temperature range, VBAT = 1.2 V, EN = VBAT (unless otherwise noted)
PARAMETER
VIH
TEST CONDITIONS
EN and ADEN input high
voltage
0.8 V < VBAT < 3.3 V
EN and ADEN input current
EN and ADEN = GND or VBAT
VBAT/SW
Quiescent current into pins
VBAT/SW and VOUT
IL = 0 mA, VEN = VI
Ioff
Shutdown current from
power source
VEN = 0 V, ADEN = VBAT, TA= 25°C
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TYP
MAX
0.8 ×VBAT
Iq
6
MIN
VO
UNIT
V
0.01
0.03
31
46
5
8
1
3
µA
µA
µA
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SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
7.6 Typical Characteristics
7.6.1 Table of Graphs
FIGURE
Maximum output current
vs Input voltage for VO = 2.5 V, 3.3 V
Figure 1
vs Input voltage for VO = 1.5 V, 1.8 V
Figure 2
vs Output current for VI = 1.2 VVO = 1.5 V, L1 = Sumida CDR74 - 10 µH
Figure 3
vs Output current for VI = 1.2 VVO = 2.5 V, L1 = Sumida CDR74 - 10 µH
Figure 4
vs Output current for VIN = 1.2 VVO = 3.3 V, L1 = Sumida CDR74 - 10 µH
Figure 5
vs Output current for VI = 2.4 VVO = 3.3 V, L1 = Sumida CDR74 - 10 µH
Figure 6
vs Input voltage for IO = 10 mA, IO = 100 mA, IO = 200 mAVO = 3.3 V, L1 =
Sumida CDR74 - 10 µH
Figure 7
TPS61016, VBAT = 1.2 V, IO = 100 mA
Sumida CDRH6D38 - 10 µH
Sumida CDRH5D18 - 10 µH
Sumida CDRH74 - 10 µH
Sumida CDRH74B - 10 µH
Efficiency
Coilcraft DS 1608C - 10 µH
Coilcraft DO 1608C - 10 µH
Coilcraft DO 3308P - 10 µH
Figure 8
Coilcraft DS 3316 - 10 µH
Coiltronics UP1B - 10 µH
Coiltronics UP2B - 10 µH
Murata LQS66C - 10 µH
Murata LQN6C - 10 µH
TDK SLF 7045 - 10 µH
TDK SLF 7032 - 10 µH
vs Output current TPS61011
Figure 9
vs Output current TPS61013
Figure 10
vs Output current TPS61016
Figure 11
Minimum supply start-up voltage
vs Load resistance
Figure 12
No-load supply current
vs Input voltage
Figure 13
Shutdown supply current
vs Input voltage
Figure 14
Switch current limit
vs Output voltage
Figure 15
Output voltage
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0.9
1.4
0.8
1
Maximum Output Current − A
Maximum Output Current − A
1.2
VO = 2.5 V
0.8
VO = 3.3 V
0.6
0.4
0.2
VO = 1.8 V
0.6
0.5
VO = 1.5 V
0.4
0.3
0.2
0.1
0
0.5
1
1.5
2
VI − Input Voltage − V
2.5
100
0
0.5
3
Figure 1. Maximum Output Current vs Input Voltage
VBAT = 1.2 V,
VO = 2.5 V
90
90
80
80
70
70
60
60
50
50
1
10
100
40
0.1
1000
1
IO − Output Current − mA
Figure 3. Efficiency vs Output Current
100
1000
Figure 4. Efficiency vs Output Current
100
VBAT = 2.4 V,
VO = 3.3 V
VBAT = 1.2 V,
VO = 3.3 V
90
90
80
80
Efficiency − %
Efficiency − %
10
IO − Output Current − mA
100
70
70
60
60
50
50
40
0.1
8
2
100
VBAT = 1.2 V,
VO = 1.5 V
40
0.1
1
1.5
VI − Input Voltage − V
Figure 2. Maximum Output Current vs Input Voltage
Efficiency − %
Efficiency − %
0.7
1
10
100
1000
40
0.1
1
10
100
1000
IO − Output Current − mA
IO − Output Current − mA
Figure 5. Efficiency vs Output Current
Figure 6. Efficiency vs Output Current
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SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
91
100
VO = 3.3 V
VBAT = 1.2 V,
VO = 3.3 V,
IO = 100 mA
90
90
89
IO = 200 mA
IO = 100 mA
88
Efficiency − %
Efficiency − %
80
IO = 10 mA
70
87
86
85
60
1.5
2
2.5
VI − Input Voltage − V
3
3.5
SLF7032
LQN6C
TDK SLF7045
UP2B
Murata LQS66C
DS3316
DO3308P
DO1608C
CDR74B
CDRH74
Inductor Type
Figure 8. Efficiency vs Inductor Type
Figure 7. Efficiency vs Input Voltage
1.75
2.75
VBAT = 1.2 V
VO − Output Voltage − V
VBAT = 1.2 V
VO − Output Voltage − V
Coiltronics UP1B
1
Coilcraft DS1608C
40
0.5
CDRH5D18
83
50
Sumida CDRH6D38
84
1.50
1.25
0.1
1
10
100
IO − Output Current − mA
2.50
2.25
0.1
1A
1
10
100
IO − Output Current − mA
1A
Figure 10. Output Voltage vs Output Current
Figure 9. Output Voltage vs Output Current
1
3.50
Minimum Startup Supply Voltage − V
VO − Output Voltage − V
VBAT = 1.2 V
3.25
3
0.1
0.9
0.8
0.7
1
10
100
IO − Output Current − mA
1A
Figure 11. Output Voltage vs Output Current
Copyright © 2000–2015, Texas Instruments Incorporated
100
Load Resistance − Ω
1
Figure 12. Minimum Start-Up Supply Voltage vs Load
Resistance
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6
60
50
40
I CC − Shutdown Supply Current − µ A
I CC − No-Load Supply Current − µ A
TA = 85°C
TA = 85°C
TA = 25°C
TA = −40°C
30
20
10
0
0.5
1
1.5
2
2.5
VI − Input Voltage − V
3
5
4
3
2
TA = −40°C
1
TA = 25°C
0
0.5
3.5
Figure 13. No-Load Supply Current vs Input Voltage
1
1.5
2
2.5
VI − Input Voltage − V
3
3.5
Figure 14. Shutdown Supply Current vs Input Voltage
1.2
Switch Current Limit − A
1
0.8
0.6
0.4
0.2
0
1.5
1.7
1.9
2.1 2.3 2.5 2.7 2.9
VO − Output Voltage − V
3.1
3.3
Figure 15. Switch Current Limit vs Output Voltage
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8 Parameter Measurement Information
L1
10 µH
CIN
10 µF
7
SW
6 VBAT
VOUT
5
VOUT = 3.3 V
R3
R1
9
LBI
R2
10
Low Battery Warning
TPS61016
8
OFF
LBO
COUT
22 µF
List of Components:
IC1: Only Fixed Output Versions
(Unless Otherwise Noted)
L1:
SUMIDA CDRH6D38 – 100
CIN: X7R/X5R Ceramic
COUT : X7R/X5R Ceramic
ON 1
ADEN
FB
COMP
EN
3
2
GND
4
RC
100 kΩ
CC1
10 pF
CC2
10 nF
Figure 16. Circuit Used for Typical Characteristics Measurements
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9 Detailed Description
9.1 Overview
The converter is based on a fixed frequency, current mode, pulse-width-modulation (PWM) Boost converter with
the synchronous rectifier built in. The device limits the current through the power switch on a pulse by pulse
basis. TPS6101x enters a power save-mode at light load. In this mode, TPS6101x only switches if the output
voltage trips below a set threshold voltage. It ramps up the output voltage with one or several pulses, and goes
again into power save-mode once the output voltage exceeds a set threshold voltage. The load is completely
isolated from the battery when the device shutdown. An auto-discharge function allows discharging the output
capacitor during shutdown. The auto-discharge function is enabled if this pin is connected to VBAT, and it is
disabled if ADEN is tied to GND.
9.2 Functional Block Diagram
L1
SW
CIN
Antiringing
Comparator
and Switch
Bias
Control
_
+
VOUT
VBAT
COUT
ADEN
UVLO
ADEN
ADEN
LBI
_
LBO
Current Sense,
Current Limit, Slope
Compensation
Control Logic
Oscillator
Gate Drive
EN
+
Error
Comparator
+
_
_
Error
Amplifier
+
FB
Bandgap
Reference
VREF
GND
COMP
Figure 17. Fixed Output Voltage Versions TPS61011 to TPS61016
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Functional Block Diagram (continued)
L1
SW
CIN
Antiringing
Comparator
and Switch
Bias
Control
_
+
VOUT
VBAT
COUT
ADEN
UVLO
ADEN
ADEN
+
_
LBI
_
LBO
Current Sense,
Current Limit, Slope
Compensation
Control Logic
Oscillator
Gate Drive
EN
+
FB
_
Error
Comparator
Error
Amplifier
+
Bandgap
Reference
VREF
GND
COMP
Figure 18. Adjustable Output Voltage Version TPS61010
9.3 Feature Description
9.3.1 Controller Circuit
The device is based on a current-mode control topology using a constant frequency pulse-width modulator to
regulate the output voltage. The controller limits the current through the power switch on a pulse by pulse basis.
The current-sensing circuit is integrated in the device, therefore, no additional components are required. Due to
the nature of the boost converter topology used here, the peak switch current is the same as the peak inductor
current, which will be limited by the integrated current limiting circuits under normal operating conditions.
The control loop must be externally compensated with an R-C-C network connected to the COMP-pin.
9.3.2 Synchronous Rectifier
The device integrates an N-channel and a P-channel MOSFET transistor to realize a synchronous rectifier. There
is no additional Schottky diode required. Because the device uses a integrated low rDS(on) PMOS switch for
rectification, the power conversion efficiency reaches 95%.
A special circuit is applied to disconnect the load from the input during shutdown of the converter. In conventional
synchronous rectifier circuits, the backgate diode of the high-side PMOS is forward biased in shutdown and
allows current flowing from the battery to the output. This device, however, uses a special circuit to disconnect
the backgate diode of the high-side PMOS and so, disconnects the output circuitry from the source when the
regulator is not enabled (EN = low).
The benefit of this feature for the system design engineer, is that the battery is not depleted during shutdown of
the converter. So, no additional effort has to be made by the system designer to ensure disconnection of the
battery from the output of the converter. Therefore, design performance will be increased without additional costs
and board space.
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Feature Description (continued)
9.3.3 Power-Save Mode
The TPS61010 is designed for high efficiency over a wide output current range. Even at light loads, the efficiency
stays high because the switching losses of the converter are minimized by effectively reducing the switching
frequency. The controller enters a powersave-mode if certain conditions are met. In this mode, the controller only
switches on the transistor if the output voltage trips below a set threshold voltage. It ramps up the output voltage
with one or several pulses, and goes again into powersave-mode once the output voltage exceeds a set
threshold voltage.
9.3.4 Device Enable
The device is shut down when EN is set to GND. In this mode, the regulator stops switching, all internal control
circuitry including the low-battery comparator, is switched off, and the load is disconnected from the input (as
described above in the synchronous rectifier section). This also means that the output voltage may drop below
the input voltage during shutdown.
The device is put into operation when EN is set high. During start-up of the converter, the duty cycle is limited in
order to avoid high peak currents drawn from the battery. The limit is set internally by the current limit circuit and
is proportional to the voltage on the COMP-pin.
9.3.5 Undervoltage Lockout (UVLO)
The UVLO function prevents the device from starting up if the supply voltage on VBAT is lower than
approximately 0.7 V. This UVLO function is implemented in order to prevent the malfunctioning of the converter.
When in operation and the battery is being discharged, the device will automatically enter the shutdown mode if
the voltage on VBAT drops below approximately 0.7 V.
9.3.6 Autodischarge
The autodischarge function is useful for applications where the supply voltage of a μC, μP, or memory has to be
removed during shutdown in order to ensure a defined state of the system.
The autodischarge function is enabled when the ADEN is set high, and is disabled when the ADEN is set to
GND. When the autodischarge function is enabled, the output capacitor will be discharged after the device is
shut down by setting EN to GND. The capacitors connected to the output are discharged by an integrated switch
of 300 Ω, hence the discharge time depends on the total output capacitance. The residual voltage on VOUT is
less than 0.4 V after autodischarge.
9.3.7 Low-Battery Detector Circuit (LBI and LBO)
The low-battery detector circuit is typically used to supervise the battery voltage and to generate an error flag
when the battery voltage drops below a user-set threshold voltage. The function is active only when the device is
enabled. When the device is disabled, the LBO-pin is high impedance. The LBO-pin goes active low when the
voltage on the LBI-pin decreases below the set threshold voltage of 500 mV ±15 mV, which is equal to the
internal reference voltage. The battery voltage, at which the detection circuit switches, can be programmed with a
resistive divider connected to the LBI-pin. The resistive divider scales down the battery voltage to a voltage level
of 500 mV, which is then compared to the LBI threshold voltage. The LBI-pin has a built-in hysteresis of 10 mV.
See the application section for more details about the programming of the LBI-threshold.
If the low-battery detection circuit is not used, the LBI-pin should be connected to GND (or to VBAT) and the
LBO-pin can be left unconnected. Do not let the LBI-pin float.
9.3.8 Antiringing Switch
The device integrates a circuit that removes the ringing that typically appears on the SW-node when the
converter enters the discontinuous current mode. In this case, the current through the inductor ramps to zero and
the integrated PMOS switch turns off to prevent a reverse current from the output capacitors back to the battery.
Due to remaining energy that is stored in parasitic components of the semiconductors and the inductor, a ringing
on the SW pin is induced. The integrated antiringing switch clamps this voltage internally to VBAT and therefore,
dampens this ringing.
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Feature Description (continued)
9.3.9 Adjustable Output Voltage
The devices with fixed output voltages are trimmed to operate with an output voltage accuracy of ±3%.
The accuracy of the adjustable version is determined by the accuracy of the internal voltage reference, the
controller topology, and the accuracy of the external resistor. The reference voltage has an accuracy of ±4% over
line, load, and temperature. The controller switches between fixed frequency and pulse-skip mode, depending on
load current. This adds an offset to the output voltage that is equivalent to 1% of VO. The tolerance of the
resistors in the feedback divider determine the total system accuracy.
9.4 Device Functional Modes
Table 1. TPS6101x Operation Modes
MODE
DESCRIPTION
CONDITION
PWM
Boost in normal switching operation
Heavy load
PFM
Boost in power save operation
Light load
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The devices are designed to operate from an input voltage supply range between 0.9 V and 3.3 V with a
maximum switch current limit up to 1300mA. The devices operate in PWM mode from the medium to heavy load
conditions and in power save mode at light load condition. In PWM mode the TPS6101x converter operates with
the nominal switching frequency of 500kHz. As the load current decreases, the converter enters power save
mode, reducing the switching frequency and minimizing the IC quiescent current to achieve high efficiency over
the entire load current range.
10.2 Typical Applications
10.2.1 1.8-mm Maximum Height Power Supply With Single Battery Cell Input Using Low Profile
Components
U1
L1
SW
VOUT
R4
C1
VBAT
Battery
LBO
C4
LBO
C5
OUTPUT
R5
LBI
FB
R6
R1
ADEN
COMP
C2
EN
C3
GND
List of Components:
U1
TPS6101 (1–6)
C1, C4, C5 10 µF X5R Ceramic,
TDK C3216X5R0J106
L1
10 µH
SUMIDA CDRH5D18–100
Figure 19. 1.8-mm Maximum Height Power Supply With Single Battery Cell Input Using Low Profile
Components Schematic
10.2.1.1 Design Requirements
Use the following typical application design procedure to select external components values for the TPS6101x
device.
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Typical Applications (continued)
Table 2. TPS61010 3.3 V Output Design Parameters
DESIGN PARAMETERS
EXAMPLE VALUES
Input Voltage Range
0.9 V to 3.3 V
Output Voltage
3.3 V
Output Voltage Ripple
±3% VOUT
Transient Response
±10% VOUT
Input Voltage Ripple
±200 mV
Output Current Rating
200 mA
Operating Frequency
500 kHz
10.2.1.2 Detailed Design Procedure
The TPS6101x boost converter family is intended for systems that are powered by a single-cell NiCd or NiMH
battery with a typical terminal voltage between 0.9 V to 1.6 V. It can also be used in systems that are powered by
two-cell NiCd or NiMH batteries with a typical stack voltage between 1.8 V and 3.2 V. Additionally, single- or
dual-cell, primary and secondary alkaline battery cells can be the power source in systems where the TPS6101x
is used.
10.2.1.2.1 Programming the TPS61010 Adjustable Output Voltage Device
The output voltage of the TPS61010 can be adjusted with an external resistor divider. The typical value of the
voltage on the FB pin is 500 mV in fixed frequency operation and 485 mV in the power-save operation mode.
The maximum allowed value for the output voltage is 3.3 V. The current through the resistive divider should be
about 100 times greater than the current into the FB pin. The typical current into the FB pin is 0.01 µA, and the
voltage across R4 is typically 500 mV. Based on those two values, the recommended value for R4 is in the range
of 500 kΩ in order to set the divider current at 1 µA. From that, the value of resistor R3, depending on the
needed output voltage (VO), can be calculated using Equation 1.
VO
æ VO
ö
æ
ö
R3 = R4 ´ ç
- 1÷ = 500kW ´ ç
÷
è VFB ø
è 500mV - 1 ø
(1)
If, as an example, an output voltage of 2.5 V is needed, a 2-MΩ resistor should be chosen for R3.
L1
10 µH
CIN
10 µF
10 V
7
SW
6 VBAT
VOUT
5
R5
R1
9
LBI
LBO
R2
FB
8
R3
10
Low Battery Warning
3
TPS61016
1
1 Cell
NiMH,
NiCd or
Alkaline
VOUT = 3.3 V
COUT
22 µF
10 V
R4
EN
COMP
ADEN
GND
4
2
RC
100 kΩ
CC1
10 pF
CC2
10 nF
Figure 20. Typical Application Circuit for Adjustable Output Voltage Option
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The output voltage of the adjustable output voltage version changes with the output current. Due to deviceinternal ground shift, which is caused by the high switch current, the internal reference voltage and the voltage
on the FB pin increases with increasing output current. Since the output voltage follows the voltage on the FB
pin, the output voltage rises as well with a rate of 1 mV per 1-mA output current increase. Additionally, when the
converter goes into pulse-skip mode at output currents around 5 mA and lower, the output voltage drops due to
the hysteresis of the controller. This hysteresis is about 15 mV, measured on the FB pin.
10.2.1.2.2 Programming the Low Battery Comparator Threshold Voltage
The current through the resistive divider should be about 100 times greater than the current into the LBI pin. The
typical current into the LBI pin is 0.01 µA, the voltage across R2 is equal to the reference voltage that is
generated on-chip, which has a value of 500 mV ±15 mV. The recommended value for R2 is therefore in the
range of 500 kΩ. From that, the value of resistor R1, depending on the desired minimum battery voltage VBAT,
can be calculated using Equation 2.
æ VBAT
ö
æ VBAT
ö
R1 = R2 ´ ç
- 1÷ = 500kW ´ ç
- 1÷
è VREF ø
è 500mV
ø
(2)
For example, if the low-battery detection circuit should flag an error condition on the LBO output pin at a battery
voltage of 1 V, a resistor in the range of 500 kΩ should be chosen for R1. The output of the low battery
comparator is a simple open-drain output that goes active low if the battery voltage drops below the programmed
threshold voltage on LBI. The output requires a pullup resistor with a recommended value of 1 MΩ, and should
only be pulled up to the VO. If not used, the LBO pin can be left floating or tied to GND.
10.2.1.2.3 Inductor Selection
A boost converter normally requires two main passive components for storing energy during the conversion. A
boost inductor is required and a storage capacitor at the output. To select the boost inductor, it is recommended
to keep the possible peak inductor current below the current limit threshold of the power switch in the chosen
configuration. For example, the current limit threshold of the TPS61010's switch is 1100 mA at an output voltage
of 3.3 V. The highest peak current through the inductor and the switch depends on the output load, the input
(VBAT), and the output voltage (VO). Estimation of the maximum average inductor current can be done using
Equation 3.
VO
IL = IOUT ´
VBAT ´ 0.8
(3)
For example, for an output current of 100 mA at 3.3 V, at least 515-mA of current flows through the inductor at a
minimum input voltage of 0.8 V.
The second parameter for choosing the inductor is the desired current ripple in the inductor. Normally, it is
advisable to work with a ripple of less than 20% of the average inductor current. A smaller ripple reduces the
magnetic hysteresis losses in the inductor, as well as output voltage ripple and EMI. But in the same way,
regulation time at load changes rises. In addition, a larger inductor increases the total system costs.
With those parameters, it is possible to calculate the value for the inductor by using Equation 4.
VBAT ´ (VOUT - VBAT )
L=
DIL ´ f ´ VOUT
(4)
Parameter 7 is the switching frequency and Δ IL is the ripple current in the inductor, that is, 20% × IL.
In this example, the desired inductor has the value of 12 µH. With this calculated value and the calculated
currents, it is possible to choose a suitable inductor. Care must be taken that load transients and losses in the
circuit can lead to higher currents as estimated in Equation 3. Also, the losses in the inductor caused by
magnetic hysteresis losses and copper losses are a major parameter for total circuit efficiency.
The following inductor series from different suppliers were tested. All work with the TPS6101x converter within
their specified parameters:
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Table 3. Recommended Inductors
VENDOR
RECOMMENDED INDUCTOR SERIES
Sumida
Sumida CDR74B
Sumida CDRH74
Sumida CDRH5D18
Sumida CDRH6D38
Coilcraft
Coilcraft DO 1608C
Coilcraft DS 1608C
Coilcraft DS 3316
Coilcraft DT D03308P
Coiltronics
Coiltronics UP1B
Coiltronics UP2B
Murata
Murata LQS66C
Murata LQN6C
TDK
TDK SLF 7045
TDK SLF 7032
10.2.1.2.4 Capacitor Selection
The major parameter necessary to define the output capacitor is the maximum allowed output voltage ripple of
the converter. This ripple is determined by two parameters of the capacitor, the capacitance and the ESR. It is
possible to calculate the minimum capacitance needed for the defined ripple, supposing that the ESR is zero, by
using Equation 5.
IOUT ´ (VOUT - VBAT )
C min =
f ´ DV ´ VOUT
(5)
Parameter f is the switching frequency and ΔV is the maximum allowed ripple.
With a chosen ripple voltage of 15 mV, a minimum capacitance of 10 µF is needed. The total ripple is larger due
to the ESR of the output capacitor. This additional component of the ripple can be calculated using Equation 6.
DVESR = IOUT ´ RESR
(6)
An additional ripple of 30 mV is the result of using a tantalum capacitor with a low ESR of 300 mΩ. The total
ripple is the sum of the ripple caused by the capacitance and the ripple caused by the ESR of the capacitor. In
this example, the total ripple is 45 mV. It is possible to improve the design by enlarging the capacitor or using
smaller capacitors in parallel to reduce the ESR or by using better capacitors with lower ESR, like ceramics. For
example, a 10 µF ceramic capacitor with an ESR of 50 mΩ is used on the evaluation module (EVM). Tradeoffs
must be made between performance and costs of the converter circuit.
A 10-µF input capacitor is recommended to improve transient behavior of the regulator. A ceramic capacitor or a
tantalum capacitor with a 100 nF ceramic capacitor in parallel placed close to the IC is recommended.
10.2.1.2.5 Compensation of the Control Loop
An R/C/C network must be connected to the COMP pin in order to stabilize the control loop of the converter.
Both the pole generated by the inductor L1 and the zero caused by the ESR and capacitance of the output
capacitor must be compensated. The network shown in Figure 21 satisfies these requirements.
RC
COMP
100 kΩ
CC1
10 pF
CC2
10 nF
Figure 21. Compensation of Control Loop
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Resistor RC and capacitor CC2 depend on the chosen inductance. For a 10 µH inductor, the capacitance of CC2
should be chosen to 10 nF, or in other words, if the inductor is XX µH, the chosen compensation capacitor
should be XX nF, the same number value. The value of the compensation resistor is then chosen based on the
requirement to have a time constant of 1 ms, for the R/C network RC and CC2, hence for a 33 nF capacitor, a 33
kΩ resistor should be chosen for RC.
Capacitor CC1 depends on the ESR and capacitance value of the output capacitor, and on the value chosen for
RC. Its value is calculated using Equation 7.
COUT ´ ESRCOUT
CC1 =
RC
(7)
For a selected output capacitor of 22 µF with an ESR of 0.2Ω , an RC of 33 kΩ, the value of CC1 is in the range of
100 pF.
Table 4. Recommended Compensation Components
OUTPUT CAPACITOR
INDUCTOR [µH]
RC [kΩ]
CC1 [pF]
CC2 [nF]
0.2
33
120
33
0.3
47
150
22
22
0.4
100
100
10
10
0.1
100
10
10
CAPACITANCE [µF]
ESR [Ω]
33
22
22
22
10
10
10.2.1.3 Application Curves
Output Voltage
20 mV/div, AC
Output Voltage
50 mV/div, AC
Inductor Current
50 mA/div, AC
0
0.5
1
1.5
2
2.5
3
Inductor Current
50 mA/div, AC
3.5
4
4.5
5
t − Time − µs
Figure 22. Output Voltage Ripple in Continuous Mode
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0
0.1
0.2 0.3
0.4 0.5 0.6
t − Time − ms
0.7 0.8
0.9
1
Figure 23. Output Voltage Ripple in Discontinuous Mode
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Input Voltage
100 mV/div, AC
Output Voltage
50 mV/div, AC
Output Current
50 mA/div, AC
0
1
2
3
4
5
6
t − Time − ms
Output Voltage
50 mA/div, AC
7
8
9
0
10
1
2
3
4
5
6
t − Time − ms
7
8
9
10
Figure 25. Line Transient Response
Figure 24. Load Transient Response
Enable,
2 V/div,DC
Output Voltage,
1 V/div,DC
Input Current,
200 mA/div,DC
V(SW),
2 V/div,DC
0
1
2
3
4
5
6
t − Time − ms
7
8
9
10
Figure 26. Converter Start-Up Time After Enable
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10.2.2 250-mA Power Supply With Two Battery Cell Input
TPS6101x application schematic of 2 Cell AA Battery Input and >250-mA output current.
U1
IOUT ≥ 250 mA
L1
SW
Battery
VOUT
R4
C1
VBAT
LBO
C4
LBO
OUTPUT
R5
LBI
FB
R6
R1
ADEN
COMP
C2
EN
C3
GND
List of Components:
U1
TPS6101 (1–6)
C1
10 µF X5R Ceramic,
TDK C3216X5R0J106
C4
22 µF X5R Ceramic,
TDK C3225X5R0J226
L1
10 µH SUMIDA CDRH6D38
Figure 27. 250-mA Power Supply With Two Battery Cell Input
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TPS61010, TPS61011, TPS61012, TPS61013, TPS61014, TPS61015, TPS61016
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SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
10.2.3 Dual Output Voltage Power Supply for DSPs
TPS6101x application schematic with 3.3Vout of I/O supply and post LDO 1.5Vout of DSP core supply.
U1
L1
SW
Battery
3.3-V I/O Supply
VOUT
R4
C1
VBAT
U2
LDO
C4
1.5-V Core Supply
LBO
LBO
C6
R5
LBI
GND
FB
R6
R1
ADEN
COMP
C2
EN
C3
GND
List of Components:
U1
TPS61016
U2
TPS76915
C1
10 µF X5R Ceramic,
TDK C3216X5R0J106
C4
22 µF X5R Ceramic,
TDK C3225X5R0J226
L1
10 µH SUMIDA CDRH6D38
Figure 28. Dual Output Voltage Power Supply for DSPs
10.2.4 Power Supply With Auxiliary Positive Output Voltage
TPS6101x application schematic of 3.3Vout and 6Vout with charge pump.
6-V/10-mA Aux Output
C7
DS1
C6
U1
L1
SW
Battery
VOUT
3.3-V/100-mA Main Output
R4
C1
VBAT
LBO
C4
LBO
R5
GND
LBI
FB
R6
R1
ADEN
COMP
C2
EN
C3
GND
List of Components:
U1
TPS61016
DS1
BAT54S
C1
10 µF X5R Ceramic,
TDK C3216X5R0J106
C4
22 µF X5R Ceramic,
TDK C3225X5R0J226,
C6
1 µF X5R Ceramic,
C7
0.1 µF X5R Ceramic,
L1
10 µH SUMIDA CDRH6D38–100
Figure 29. Power Supply With Auxiliary Positive Output Voltage
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SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
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10.2.5 Power Supply With Auxiliary Negative Output Voltage
TPS6101x application schematic of 3.3Vout and -2.7Vout with charge pump.
C7
C6
DS1
GND
–2.7-V/10-mA Aux Output
U1
L1
SW
Battery
VOUT
3.3-V/100-mA Main Output
R4
C1
VBAT
LBO
C4
LBO
GND
R5
FB
LBI
R6
R1
ADEN
COMP
C2
EN
C3
GND
List of Components:
U1
TPS61016
DS1
BAT54S
C1
10 µF X5R Ceramic,
TDK C3216X5R0J106
C4
22 µF X5R Ceramic,
TDK C3225X5R0J226,
C6
1 µF X5R Ceramic,
C7
0.1 µF X5R Ceramic,
L1
10 µH SUMIDA CDRH6D38–100
Figure 30. Power Supply With Auxiliary Negative Output Voltage
10.2.6 TPS6101x EVM Circuit Diagram
TPS6101x application schematic of the standard EVM configuration.
L1
SW
INPUT
OUTPUT
VOUT
R4
C1
VBAT
R5
LBO
C4
C5
TPS6101x
LBI
FB
R6
R1
ADEN
C2
EN
R3
COMP
J1
J2
R2
LBO
C3
GND
GND
Figure 31. TPS6101x EVM Circuit Diagram
24
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www.ti.com
SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
11 Power Supply Recommendations
The device is designed to operate from an input voltage supply range between 0.9 V and 3.3 V. This input supply
must be well regulated. If the input supply is located more than a few inches from the converter, additional bulk
capacitance may be required in addition to the ceramic bypass capacitors. An electrolytic or tantalum capacitor
with a value of 47 μF is a typical choice.
12 Layout
12.1 Layout Guidelines
As for all switching power supplies, the layout is an important step in the design, especially at high peak currents
and high switching frequencies. If the layout is not carefully done, the regulator could show stability problems as
well as EMI problems.
Therefore, use wide and short traces for the main current path as indicated in bold in Figure 32. The input
capacitor, output capacitor, and the inductor should be placed as close as possible to the IC. Use a common
ground node as shown in Figure 32 to minimize the effects of ground noise. The compensation circuit and the
feedback divider should be placed as close as possible to the IC. To layout the control ground, it is
recommended to use short traces as well, separated from the power ground traces. Connect both grounds close
to the ground pin of the IC as indicated in the layout diagram in Figure 32. This avoids ground shift problems,
which can occur due to superimposition of power ground current and control ground current.
12.2 Layout Example
U1
L1
SW
Battery
VOUT
R4
C1
VBAT
LBO
C4
LBO
R2
R1
R3
OUTPUT
R5
LBI
FB
R6
ADEN
COMP
C2
EN
C3
GND
Figure 32. Layout Diagram
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SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
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Layout Example (continued)
Figure 33. TPS6101x EVM Component Placement (Actual Size: 55.9 mm x 40.6 mm)
Figure 34. TPS6101x EVM Top Layer Layout (Actual Size: 55.9 mm x 40.6 mm)
26
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www.ti.com
SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
Layout Example (continued)
Figure 35. TPS6101x EVM Bottom Layer Layout (Actual Size: 55.9 mm x 40.6 mm)
12.3 Thermal Considerations
Implementation of integrated circuits in low-profile and fine-pitch surface-mount packages typically requires
special attention to power dissipation. Many system-dependent issues such as thermal coupling, airflow, added
heat sinks and convection surfaces, and the presence of other heat-generating components affect the powerdissipation limits of a given component.
Three basic approaches for enhancing thermal performance are:
• Improving the power dissipation capability of the PWB design
• Improving the thermal coupling of the component to the PWB
• Introducing airflow in the system
The maximum junction temperature (TJ) of the TPS6101x devices is 125°C. The thermal resistance of the 10-pin
MSOP package (DGS) is RθJA = 161.8°C/W. Specified regulator operation is assured to a maximum ambient
temperature (TA) of 85°C. Therefore, the maximum power dissipation is about 247 mW. More power can be
dissipated if the maximum ambient temperature of the application is lower.
TJ(MAX) - TA 125°C - 85°C
PD(MAX) =
=
= 247 mW
RqJA
161.8°C/ W
(8)
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SLVS314F – SEPTEMBER 2000 – REVISED AUGUST 2015
www.ti.com
13 Device and Documentation Support
13.1 Device Support
13.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
13.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 5. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TPS61010
Click here
Click here
Click here
Click here
Click here
TPS61011
Click here
Click here
Click here
Click here
Click here
TPS61012
Click here
Click here
Click here
Click here
Click here
TPS61013
Click here
Click here
Click here
Click here
Click here
TPS61014
Click here
Click here
Click here
Click here
Click here
TPS61015
Click here
Click here
Click here
Click here
Click here
TPS61016
Click here
Click here
Click here
Click here
Click here
13.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
28
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Product Folder Links: TPS61010 TPS61011 TPS61012 TPS61013 TPS61014 TPS61015 TPS61016
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS61010DGS
ACTIVE
VSSOP
DGS
10
80
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
AIP
Samples
TPS61010DGSR
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
AIP
Samples
TPS61010DGSRG4
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green
Level-1-260C-UNLIM
-40 to 85
AIP
Samples
TPS61012DGS
ACTIVE
VSSOP
DGS
10
80
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
AIR
Samples
TPS61012DGSG4
ACTIVE
VSSOP
DGS
10
80
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
AIR
Samples
TPS61013DGS
ACTIVE
VSSOP
DGS
10
80
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
AIS
Samples
TPS61014DGS
ACTIVE
VSSOP
DGS
10
80
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
AIT
Samples
TPS61015DGS
ACTIVE
VSSOP
DGS
10
80
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
AIU
Samples
TPS61015DGSR
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
AIU
Samples
TPS61016DGS
ACTIVE
VSSOP
DGS
10
80
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
AIV
Samples
TPS61016DGSR
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
AIV
Samples
NIPDAU
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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