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TPS61175
SLVS892F – DECEMBER 2008 – REVISED APRIL 2019
TPS61175 3-A High-Voltage Boost Converter With Soft Start
and Programmable Switching Frequency
1 Features
3 Description
•
•
•
•
The TPS61175 device is a monolithic switching
regulator with integrated 3-A, 40-V power switch. The
device can be configured in several standard
switching-regulator topologies, including boost,
SEPIC, and flyback. The device has a wide input
voltage range to support application with input voltage
from multicell batteries or regulated 5-V, 12-V power
rails.
1
•
•
•
•
•
2.9-V to 18-V Input voltage range
3-A, 40-V Internal switch
High-efficiency power conversion: Up to 93%
Frequency set by external resistor: 200 kHz to 2.2
MHz
Synchronous external switching frequency
User-defined soft start into full load
Skip-switching cycle for output regulation at light
load
14-Pin HTSSOP package with PowerPad™
Create a custom design using the TPS61175 with
the WEBENCH Power Designer
The TPS61175 regulates the output voltage with
current mode pulse width modulation (PWM) control.
The switching frequency of PWM is set by either an
external resistor or an external clock signal. The user
can program the switching frequency from 200 kHz to
2.2 MHz.
The device features a programmable soft-start
function to limit inrush current during start-up, and
has other built-in protection features, such as pulseby-pulse overcurrent limit and thermal shutdown. The
TPS61175 is available in 14-pin HTSSOP package
with PowerPad.
2 Applications
•
•
•
•
5-V to 12-V, 24-V Power conversion
Supports SEPIC and flyback topologies
ADSL modems
TV tuners
Device Information(1)
PART NUMBER
TPS61175
PACKAGE
HTSSOP (14)
BODY SIZE (NOM)
5.00 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
VIN
D1
L1
VOUT
C2
C1
TPS61175
VIN
SW
EN
SW
FREQ
SS
FB
PGND
COMP PGND
R4
C3
R3
Syn
AGND
R1
R2
PGND
NC
C4
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS61175
SLVS892F – DECEMBER 2008 – REVISED APRIL 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
5
5
6
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 8
7.1
7.2
7.3
7.4
Overview ................................................................... 8
Functional Block Diagram ......................................... 8
Feature Description................................................... 9
Device Functional Modes........................................ 11
8
Application and Implementation ........................ 12
8.1 Application Information............................................ 12
8.2 Typical Application ................................................. 12
9 Power Supply Recommendations...................... 20
10 Layout................................................................... 20
10.1 Layout Guidelines ................................................. 20
10.2 Layout Example .................................................... 20
10.3 Thermal Considerations ........................................ 21
11 Device and Documentation Support ................. 22
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Device Support......................................................
Development Support ...........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
22
23
12 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
Changes from Revision E (February 2019) to Revision F
Page
•
Changed Soft Start figure reference to point to the correct soft start waveform. .................................................................. 9
•
Changed "≤" sign in Equation 7 to "≥" .................................................................................................................................. 14
Changes from Revision D (April 2016) to Revision E
Page
•
Changed Handing Ratings table to ESD Ratings; moved Storage Temperature to Absolute Maximum Ratings ................ 4
•
Updated symbols in Thermal Information .............................................................................................................................. 5
•
Added the IIN(MAX) for the IOUT(max) calculation equation. ........................................................................................................ 14
Changes from Revision C (August 2014) to Revision D
•
Revised second paragraph of Minimum ON Time and Pulse Skipping section or clarity. ................................................... 11
Changes from Revision B (February 2012) to Revision C
•
2
Page
Replaced the Dissipation Ratings Table with the Thermal Information Table........................................................................ 4
Changes from Original (December 2008) to Revision A
•
Page
Added Handling Rating table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section................................................................ 1
Changes from Revision A (October 2010) to Revision B
•
Page
Page
Changed the Ordering Information table - Part Number From: TPS61175 To: TPS61175PWP; Removed the
Package Marking column ...................................................................................................................................................... 1
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5 Pin Configuration and Functions
TSSOP
14 Pins
Top View
SW
SW
VIN
EN
SS
SYNC
AGND
1
2
3
4
5
6
7
PGND
PGND
PGND
NC
FREQ
FB
COMP
14
13
12
11
10
9
8
Pin Functions
PIN
NAME
NO.
DESCRIPTION
I/O
AGND
7
I
Signal ground of the IC
COMP
8
O
Output of the internal transconductance error amplifier. An external RC network is connected to this pin to
compensate the regulator.
EN
4
I
Enable pin. When the voltage of this pin falls below the enable threshold for more than 10ms, the IC turns
off.
FB
9
I
Feedback pin for positive voltage regulation. Connect to the center tap of a resistor divider to program the
output voltage.
FREQ
10
O
Switch frequency program pin. An external resistor is connected to this pin to set switch frequency. See
application section for information on how to size the FREQ resistor.
NC
11
I
Reserved pin. Must connect this pin to ground.
12,13,14
I
Power ground of the IC. It is connected to the source of the PWM switch.
SS
5
O
Soft start programming pin. A capacitor between the SS pin and GND pin programs soft start timing. See
Application and Implementation for information on how to size the SS capacitor.
SW
1,2
I
This is the switching node of the IC. Connect SW to the switched side of the inductor.
6
I
Switch frequency synchronous pin. Customers can use an external signal to set the IC switch frequency
between 200-kHz and 2.2-MHz. If not used, this pin should be tied to AGND as short as possible to avoid
noise coupling.
PGND
SYNC
Thermal Pad
VIN
The thermal pad should be soldered to the analog ground. If possible, use thermal via to connect to top and
internal ground plane layers for ideal power dissipation.
3
I
The input supply pin for the IC. Connect VIN to a supply voltage between 2.9 V and 18 V. It is acceptable
for the voltage on the pin to be different from the boost power stage input for applications requiring voltage
beyond VIN range.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
Supply voltages on pin VIN (2)
Voltages on pins EN
(2)
MIN
MAX
–0.3
20
UNIT
V
–0.3
20
V
Voltage on pin FB, FREQ and COMP (2)
–0.3
3
V
Voltage on pin SYNC, SS (2)
–0.3
7
V
–0.3
40
V
Voltage on pin SW
(2)
Continuous power dissipation
See Thermal Information
Operating junction temperature range
–40
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
(2)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input voltage
2.9
18
VO
Output voltage
VIN
38
V
L
Inductor (1)
4.7
47
μH
fSW
Switching frequency
200
2200
kHz
CI
Input capacitor
4.7
CO
Output capacitor
4.7
VSYN
External switching frequency logic
TA
Operating ambient temperature
TJ
Operating junction temperature
(1)
4
V
μF
μF
5
V
–40
85
°C
–40
125
°C
The inductance value depends on the switching frequency and end application. While larger values may be used, values between 4.7μH and 47-μH have been successfully tested in various applications. Refer to Selecting the Inductor for detail.
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6.4 Thermal Information
TPS61175
THERMAL METRIC (1)
PWP (HTSSOP)
UNIT
14 PINS
RθJA
Junction-to-ambient thermal resistance
45.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
34.9
°C/W
RθJB
Junction-to-board thermal resistance
30.1
°C/W
ψJT
Junction-to-top characterization parameter
1.5
°C/W
ψJB
Junction-to-board characterization parameter
29.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
5.8
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
6.5 Electrical Characteristics
FSW = 1.2 MHz (Rfreq = 80 kΩ), VIN = 3.6 V, TA = –40°C to +85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
VIN
Input voltage range
18
V
IQ
Operating quiescent current into Vin
Device PWM switching without load
2.9
3.5
mA
ISD
Shutdown current
EN=GND
1.5
μA
VUVLO
Under-voltage lockout threshold
2.5
Vhys
Under-voltage lockout hysteresis
130
2.7
V
mV
ENABLE AND REFERENCE CONTROL
Venh
EN logic high voltage
VIN = 2.9 V to 18 V
Venl
EN logic low voltage
VIN = 2.9 V to 18 V
VSYNh
SYN logic high voltage
VSYNl
SYN logic low voltage
Ren
EN pull down resistor
Toff
Shutdown delay, SS discharge
1.2
V
0.4
V
0.4
V
1.2
400
EN high to low
800
1600
kΩ
10
ms
VOLTAGE AND CURRENT CONTROL
VREF
Voltage feedback regulation voltage
IFB
Voltage feedback input bias current
1.204
Isink
Comp pin sink current
VFB = VREF + 200 mV, VCOMP = 1 V
50
μA
Isource
Comp pin source current
VFB = VREF –200 mV, VCOMP = 1 V
130
μA
VCCLP
Comp pin clamp voltage
High Clamp, VFB = 1 V
Low Clamp, VFB = 1.5 V
3
0.75
V
VCTH
Comp pin threshold
Duty cycle = 0%
0.95
V
Gea
Error amplifier transconductance
Rea
Error amplifier output resistance
fea
Error amplifier crossover frequency
240
1.229
340
1.254
V
200
nA
440
μmho
10
MΩ
500
KHz
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Electrical Characteristics (continued)
FSW = 1.2 MHz (Rfreq = 80 kΩ), VIN = 3.6 V, TA = –40°C to +85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
Rfreq = 480 kΩ
0.16
0.21
0.26
Rfreq = 80 kΩ
1.0
1.2
1.4
2.64
UNIT
FREQUENCY
fS
Oscillator frequency
Dmax
Maximum duty cycle
VFREQ
FREQ pin voltage
Tmin_on
Minimum on pulse width
Rfreq = 40 kΩ
1.76
2.2
VFB = 1 V, Rfreq = 80 kΩ
89%
93%
Rfreq = 80 kΩ
MHz
1.229
V
60
ns
POWER SWITCH
RDS(ON)
N-channel MOSFET on-resistance
VIN = VGS = 3.6 V
VIN = VGS = 3.0 V
ILN_NFET
N-channel leakage current
VDS = 40 V, TA = 25°C
0.13
0.13
0.25
0.3
Ω
1
μA
OC, OVP AND SS
ILIM
N-Channel MOSFET current limit
D = Dmax
ISS
Soft start bias current
Vss = 0 V
3
3.8
5
A
6
μA
160
°C
15
°C
THERMAL SHUTDOWN
Tshutdown
Thermal shutdown threshold
T hysteresis
Thermal shutdown threshold hysteresis
6.6 Typical Characteristics
Circuit of Figure 1; L1 = D104C2-10μH; D1 = SS3P6L-E3/86A, R4 = 80kΩ, R3 = 10kΩ, C4 = 22nF,
C2 = 10μF;VIN = 5V, VOUT = 24V, IOUT = 200mA (unless otherwise noted)
Table 1. Table Of Graphs
FIGURE
Efficiency
VIN = 5 V, VOUT = 12 V, 24 V, 35 V
Figure 1
Efficiency
VIN = 5 V, 12 V; VOUT = 24 V
Figure 2
Error amplifier
transconductance
vs Temperature
Figure 3
Switch current limit
vs Temperature
Figure 4
Switch current limit
vs Duty cycle
Figure 5
FB accuracy
vs Temperature
Figure 6
Line transient response
VIN = 4.5 V to 5 V
Figure 12
Load transient response
IOUT = 100 mA to 300 mA; refer to 'compensating the control loop' for optimization
Figure 13
PWM Operation
Figure 14
Pulse skipping
No load
Figure 15
Start-up
C3 = 47 nF
Figure 16
6
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100
100
VI = 5 V
VO = 12 V
90
VI = 12 V
90
VI = 5 V
Efficiency - %
Efficiency - %
VO = 24 V
80
VO = 35 V
70
80
70
60
60
VO = 24 V
50
50
0
0.2
0.4
0.6
0.8
IO - Output Current - A
1
0
1.2
0.2
400
5
380
4.5
Overcurrent Limit - A
EA Transconductance - mhos
1
1.2
Figure 2. Efficiency vs Output Current
Figure 1. Efficiency vs Output Current
360
4
3.5
340
320
-40
0.4
0.6
0.8
IO - Output Current - A
-20
0
20
40
60
80
TA - Free-Air Temperature - °C
100
3
0.2
120
Figure 3. Error Amplifier Transconductance vs Free-Air
Temperature
0.4
0.6
Duty Cycle - %
0.8
1
Figure 4. Overcurrent Limit vs Duty Cycle
4
1240
3.9
FB Voltage - mV
Overcurrent Limit - A
1235
3.8
3.7
1230
1225
3.6
3.5
-40
-20
0
80
60
20
40
TA - Free-Air Temperature - °C
100
120
Figure 5. Overcurrent Limit vs Free-Air Temperature
1220
-40
-20
0
20
40
60
80
TA - Free-Air Temperature - °C
100
120
Figure 6. FB Voltage vs Free-Air Temperature
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7 Detailed Description
7.1 Overview
The TPS61175 integrates a 40-V low-side switch FET for up to 38-V output. The device regulates the output with
current mode pulse width modulation (PWM) control. The PWM control circuitry turns on the switch at the
beginning of each switching cycle. The input voltage is applied across the inductor and stores the energy as
inductor current ramps up. During this portion of the switching cycle, the load current is provided by the output
capacitor. When the inductor current rises to the threshold set by the error amplifier output, the power switch
turns off and the external Schottky diode is forward biased. The inductor transfers stored energy to replenish the
output capacitor and supply the load current. This operation repeats each every switching cycle. As shown in
Functional Block Diagram, the duty cycle of the converter is determined by the PWM control comparator which
compares the error amplifier output and the current signal. The switching frequency is programmed by the
external resistor or synchronized to an external clock signal.
A ramp signal from the oscillator is added to the current ramp to provide slope compensation. Slope
compensation is necessary to avoid subharmonic oscillation that is intrinsic to the current mode control at duty
cycle higher than 50%. If the inductor value is lower than 4.7 μH, the slope compensation may not be adequate.
The feedback loop regulates the FB pin to a reference voltage through a transconductance error amplifier. The
output of the error amplifier is connected to the COMP pin. An external RC compensation network is connected
to the COMP pin to optimize the feedback loop for stability and transient response.
7.2 Functional Block Diagram
L1
D1
C1
R1
C2
FB
SW
VIN
R2
FB
EA
EN
Gate
Driver
1.229 V
Reference
COMP
PWM Control
R3
C4
Ramp
Generator
Current
Sensor
+
Oscillator
SS
C3
FREQ
SYNC
AGND
PGND
R4
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7.3 Feature Description
7.3.1 Switching Frequency
The switch frequency is set by a resistor (R4) connected to the FREQ pin of the TPS61175. Do not leave this pin
open. A resistor must always be connected for proper operation. See Table 2 and Figure 7 for resistor values
and corresponding frequencies.
Table 2. Switching Frequency vs External Resistor
R4 (kΩ)
fSW (kHz)
443
240
256
400
176
600
80
1200
51
2000
3500
3000
f - Frequency - kHz
2500
2000
1500
1000
500
0
10
100
External Resistor - kW
1000
Figure 7. Switching Frequency vs External Resistor
Alternatively, the TPS61175 switching frequency will synchronize to an external clock signal that is applied to the
SYNC pin. The logic level of the external clock is shown in the specification table. The duty cycle of the clock is
recommended in the range of 10% to 90%. The resistor also must be connected to the FREQ pin when IC is
switching by the external clock. The external clock frequency must be within ±20% of the corresponding
frequency set by the resistor. For example, if the corresponding frequency as set by a resistor on the FREQ pin
is 1.2-MHz, the external clock signal should be in the range of 0.96 MHz to 1.44 MHz.
If the external clock signal is higher than the frequency per the resistor on the FREQ pin, the maximum duty
cycle specification (DMAX) should be lowered by 2%. For instance, if the resistor set value is 2.5 MHz, and the
external clock is 3 MHz, DMAX is 87% instead of 89%.
7.3.2 Soft Start
The TPS61175 has a built-in soft start circuit which significantly reduces the start-up current spike and output
voltage overshoot. When the IC is enabled, an internal bias current (6 μA typically) charges a capacitor (C3) on
the SS pin. The voltage at the capacitor clamps the output of the internal error amplifier that determines the duty
cycle of PWM control, thereby the input inrush current is eliminated. Once the capacitor reaches 1.8 V, the soft
start cycle is completed and the soft-start voltage no longer clamps the error amplifier output. Refer to Figure 16
for the soft start waveform. See Table 3 for C3 and corresponding soft start time. A 47-nF capacitor eliminates
the output overshoot and reduces the peak inductor current for most applications.
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Table 3. Soft-Start Time vs C3
VIN (V)
5
12
VOUT(V)
24
35
LOAD (A)
0.4
0.6
COUT (μF)
10
10
fSW (MHz)
1.2
2
C3 (nF)
tSS(ms)
OVERSHOT (mV)
47
4
none
10
0.8
210
100
6.5
none
10
0.4
300
When the EN is pulled low for 10 ms, the IC enters shutdown and the SS capacitor discharges through a 5-kΩ
resistor for the next soft start.
7.3.3 Overcurrent Protection
The TPS61175 has a cycle-by-cycle overcurrent limit protection that turns off the power switch once the inductor
current reaches the overcurrent limit threshold. The PWM circuitry resets itself at the beginning of the next switch
cycle. During an overcurrent event, the output voltage begins to droop as a function of the load on the output.
When the FB voltage drops lower than 0.9 V, the switching frequency is automatically reduced to 1/4 of the set
value. The switching frequency does not reset until the overcurrent condition is removed. This feature is disabled
during soft start.
7.3.4 Enable and Thermal Shutdown
The TPS61175 enters shutdown when the EN voltage is less than 0.4 V for more than 10 ms. In shutdown, the
input supply current for the device is less than 1.5 μA (maximum). The EN pin has an internal 800-kΩ pulldown
resistor to disable the device when it is floating.
An internal thermal shutdown turns off the device when the typical junction temperature of 160°C is exceeded.
The IC restarts when the junction temperature drops by 15°C.
7.3.5 Undervoltage Lockout (UVLO)
An undervoltage lockout circuit prevents mis-operation of the device at input voltages below 2.5-V (typical).
When the input voltage is below the undervoltage threshold, the device remains off, and the internal switch FET
is turned off. The UVLO threshold is set below minimum operating voltage of 2.9 V to avoid any transient VIN dip
triggering the UVLO and causing the device to reset. For the input voltages between UVLO threshold and 2.9 V,
the device attempts to operate, but the specifications are not ensured.
10
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7.4 Device Functional Modes
7.4.1 Minimum ON Time and Pulse Skipping
Once the PWM switch is turned on, the TPS61175 has minimum ON pulse width of 60 ns. This sets the limit of
the minimum duty cycle of the PWM switch, and it is independent of the set switching frequency. When operating
conditions result in the TPS61175 having a minimum ON pulse width less than 60 ns, the IC enters pulseskipping mode. In this mode, the device keeps the power switch off for several switching cycles to keep the
output voltage from rising above the regulated voltage. This operation typically occurs in light load condition
when the PWM operates in discontinuous mode. Pulse skipping increases the output voltage ripple, see
Figure 15.
When setting switching frequency higher than 1.2 MHz, TI recommends using an external synchronous clock as
switching frequency to ensure pulse-skipping function works at light load. When using the internal switching
frequency above 1.2 MHz, the pulse-skipping operation may not function. When the pulse-skipping function does
not work at light load, the TPS61175 always runs in PWM mode with minimum ON pulse width. To keep the
output voltage in regulation, a minimum load is required. The minimum load is related to the input voltage, output
voltage, switching frequency, external inductor value and the maximum value of the minimum ON pulse width.
Use Equation 1 and Equation 2 to calculate the required minimum load at the worst case. The maximum tmin_ON
could be estimated to 80 ns. CSW is the total parasite capacitance at the switching node SW pin. It could be
estimated to 100 pF.
I(min_load)
(
VIN x tmin_ON + (VOUT + VD - VIN ) x L x CSW
1
=
x
2
L x (VOUT + VD - VIN )
I(min_load) =
(
VIN x tmin_ON + VIN x L x CSW
1
x
2
L x (VOUT + VD - VIN )
2
)
x ¦ SW
2
)
x ¦ SW
When VOUT + VD - VIN < VIN
(1)
When VOUT + VD - VIN > VIN
(2)
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8 Application and Implementation
8.1 Application Information
The following section provides a step-by-step design approach for configuring the TPS61175 as a voltage
regulating boost converter, as shown in Figure 8. When configured as SEPIC or flyback converter, a different
design approach is required.
8.2 Typical Application
VIN
D1
L1
VOUT
C2
C1
TPS61175
VIN
SW
EN
SW
FREQ
SS
FB
PGND
COMP PGND
R4
C3
R3
Syn
AGND
R1
R2
PGND
NC
C4
Copyright © 2016, Texas Instruments Incorporated
Figure 8. Boost Converter Configuration
8.2.1 Design Requirements
Table 4. Design Parameters
PARAMETERS
VALUES
Input voltage
5V
Output voltage
24 V
Operating frequency
1.2 MHz
8.2.2 Detailed Design Procedure
8.2.2.1 Custom Design with WEBENCH Tools
Click here to create a custom design using the TPS61175 device with the WEBENCH® Power Designer.
1. Start by entering your VIN, VOUT and IOUT requirements.
2. Optimize your design for key parameters like efficiency, footprint and cost using the optimizer dial and
compare this design with other possible solutions from Texas Instruments.
3. WEBENCH Power Designer provides you with a customized schematic along with a list of materials with real
time pricing and component availability.
4. In most cases, you will also be able to:
– Run electrical simulations to see important waveforms and circuit performance,
– Run thermal simulations to understand the thermal performance of your board,
– Export your customized schematic and layout into popular CAD formats,
– Print PDF reports for the design, and share your design with colleagues.
5. Get more information about WEBENCH tools at www.ti.com/webench.
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8.2.2.2 Determining the Duty Cycle
The TPS61175 has a maximum worst case duty cycle of 89% and a minimum on time of 60 ns. These two
constraints place limitations on the operating frequency that can be used for a given input to output conversion
ratio. The duty cycle at which the converter operates is dependent on the mode in which the converter is running.
If the converter is running in discontinuous conduction mode (DCM), where the inductor current ramps to zero at
the end of each cycle, the duty cycle varies with changes to the load much more than it does when running in
continuous conduction mode (CCM). In continuous conduction mode, where the inductor maintains a dc current,
the duty cycle is related primarily to the input and output voltages as computed in Equation 3:
V
+ VD - VIN
D = OUT
VOUT + VD
(3)
In discontinuous mode the duty cycle is a function of the load, input and output voltages, inductance and
switching frequency as computed in Equation 4:
2 ´ (VOUT + VD ) ´ IOUT ´ L ´ ¦ SW
D=
VIN 2
(4)
All converters using a diode as the freewheeling or catch component have a load current level at which they
transition from discontinuous conduction to continuous conduction. This is the point where the inductor current
just falls to zero. At higher load currents, the inductor current does not fall to zero but remains flowing in a
positive direction and assumes a trapezoidal wave shape as opposed to a triangular wave shape. This load
boundary between discontinuous conduction and continuous conduction can be found for a set of converter
parameters in Equation 5:
IOUT(crit) =
(VOUT + VD - VIN ) ´ VIN2
2 ´ (VOUT + VD ) 2 ´ ¦ SW ´ L
(5)
For loads higher than the result of Equation 5, the duty cycle is given by Equation 3 and for loads less that the
results of Equation 4, the duty cycle is given Equation 5. For Equation 3 through Equation 5, the variable
definitions are as follows:
• VOUT is the output voltage of the converter in V
• VD is the forward conduction voltage drop across the rectifier or catch diode in V
• VIN is the input voltage to the converter in V
• IOUT is the output current of the converter in A
• L is the inductor value in H
• fSW is the switching frequency in Hz
Unless otherwise stated, the design equations that follow assume that the converter is running in continuous
mode.
8.2.2.3 Selecting the Inductor
The selection of the inductor affects steady state operation as well as transient behavior and loop stability. These
factors make it the most important component in power regulator design. There are three important inductor
specifications, inductor value, DC resistance and saturation current. Considering inductor value alone is not
enough.
Inductor values can have ±20% tolerance with no current bias. When the inductor current approaches saturation
level, its inductance can fall to some percentage of its 0-A value depending on how the inductor vendor defines
saturation current. For CCM operation, the rule of thumb is to choose the inductor so that its inductor ripple
current (ΔIL) is no more than a certain percentage (RPL% = 20–40%) of its average DC value (IIN(AVG) = IL(AVG)).
V ´ D
(VOUT + VD - VIN ) ´ (1 - D)
1
=
=
D IL = IN
L ´ ¦SW
L ´ ¦S W
é
æ
1
1 öù
+
êL ´ ¦ SW ´ ç
÷ú
êë
è VO UT + VD - VIN VIN ø úû
PO UT
£ RPL% ´
VIN ´ ηes t
(6)
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Rearranging and solving for L gives:
ηest ´ VIN
L ³
é
æ
1
1 öù
+
ê ¦ SW ç
÷ ú ´ RPL% POUT
êë
è VOUT + VD - VIN VIN ø úû
(7)
Choosing the inductor ripple current to closer to 20% of the average inductor current results in a larger
inductance value, maximizes the converter’s potential output current and minimizes EMI. Choosing the inductor
ripple current closer to 40% of IL(AVG) results in a smaller inductance value, and a physically smaller inductor,
improves transient response but results in potentially higher EMI and lower efficiency if the DCR of the smaller
packaged inductor is significantly higher. Using an inductor with a smaller inductance value than computed
above may result in the converter operating in DCM. This reduces the maximum output current of the boost
converter, causes larger input voltage and output ripple, and typically reduces efficiency. Table 5 lists the
recommended inductor for the TPS61175.
Table 5. Recommended Inductors for TPS61175
PART NUMBER
L
(μH)
DCR MAX
(mΩ)
SATURATION CURRENT
(A)
SIZE
(L × W × H mm)
VENDOR
TOKO
D104C2
10
44
3.6
10.4 × 10.4 × 4.8
VLF10040
15
42
3.1
10 × 9.7 × 4
TDK
CDRH105RNP
22
61
2.9
10.5 × 10.3 × 5.1
Sumida
MSS1038
15
50
3.8
10 × 10.2 × 3.8
Coilcraft
The device has built-in slope compensation to avoid subharmonic oscillation associated with current mode
control. If the inductor value is lower than 4.7 μH, the slope compensation may not be adequate, and the loop
can be unstable. Applications requiring inductors above 47 μH have not been evaluated. Therefore, the user is
responsible for verifying operation if they select an inductor that is outside the 4.7-μH to 47-μH recommended
range.
8.2.2.4 Computing the Maximum Output Current
The over-current limit for the integrated power FET limits the maximum input current and thus the maximum input
power for a given input voltage. Maximum output power is less than maximum input power due to power
conversion losses. Therefore, the current limit setting, input voltage, output voltage and efficiency can all change
the maximum current output (IOUT(MAX)). The current limit clamps the peak inductor current, therefore the ripple
has to be subtracted to derive maximum DC current.
VIN(max) u IIN(max) u Kest VIN(max) u ILIM u (1 %RPL/2) u Kest
IOUT(max)
VOUT
VOUT
where
•
•
ILIM = overcurrent limit
ηest= efficiency estimate based on similar applications or computed above
(8)
For instance, when VIN = 12 V is boosted to VOUT = 24 V, the inductor is 10 µH, the Schottky forward voltage is
0.4 V, and the switching frequency is 1.2 MHz; then the maximum output current is 1.2 A in typical condition,
assuming 90% efficiency and a %RPL = 20%.
8.2.2.5 Setting Output Voltage
To set the output voltage in either DCM or CCM, select the values of R1 and R2 according to Equation 9:
æ R1
ö
Vout = 1.229 V ´ ç
+ 1÷
è R2
ø
æ Vout
ö
- 1÷
R1 = R2 ´ ç
1.229V
è
ø
(9)
Considering the leakage current through the resistor divider and noise decoupling into FB pin, an optimum value
for R2 is around 10 k. The output voltage tolerance depends on the VFB accuracy and the tolerance of R1 and
R2.
14
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8.2.2.6 Setting the Switching Frequency
Choose the appropriate resistor from the resistance versus frequency table Table 2 or graph Figure 7. A resistor
must be placed from the FREQ pin to ground, even if an external oscillation is applied for synchronization.
Increasing switching frequency reduces the value of external capacitors and inductors, but also reduces the
power conversion efficiency. The user should set the frequency for the minimum tolerable efficiency.
8.2.2.7 Setting the Soft-Start Time
Choose the appropriate capacitor from the soft-start table, Table 3. Increasing the soft-start time reduces the
overshoot during start-up.
8.2.2.8 Selecting the Schottky Diode
The high switching frequency of the TPS61175 demands a high-speed rectification for optimum efficiency.
Ensure that the diode’s average and peak current rating exceed the average output current and peak inductor
current. In addition, the diode’s reverse breakdown voltage must exceed the switch FET rating voltage of 40 V.
So, the VISHAY SS3P6L-E3/86A is recommended for TPS61175. The power dissipation of the diode's package
must be larger than IOUT(max) × VD.
8.2.2.9 Selecting the Input and Output Capacitors
The output capacitor is mainly selected to meet the requirements for the output ripple and load transient. Then
the loop is compensated for the output capacitor selected. The output ripple voltage is related to the capacitor’s
capacitance and its equivalent series resistance (ESR). Assuming a capacitor with zero ESR, the minimum
capacitance needed for a given ripple can be calculated using Equation 10:
Cout =
(VOUT
- VIN )Iout
VOUT ´ Fs ´ Vripple
(10)
where Vripple = peak to peak output ripple. The additional output ripple component caused by ESR is calculated
using:
Vripple_ESR = I × RESR
Due to its low ESR, Vripple_ESR can be neglected for ceramic capacitors, but must be considered if tantalum or
electrolytic capacitors are used.
The minimum ceramic output capacitance needed to meet a load transient requirement can be estimated using
Equation 11:
ΔITRAN
COUT =
2 ´ p ´ fLOOP-BW ´ ΔVTRAN
where
•
•
•
ΔITRAN is the transient load current step
ΔVTRAN is the allowed voltage dip for the load current step
fLOOP-BW is the control loop bandwidth (that is, the frequency where the control loop gain crosses zero).
(11)
Care must be taken when evaluating a ceramic capacitor’s derating under DC bias, aging and AC signal. For
example, larger form factor capacitors (in 1206 size) have their self resonant frequencies in the range of the
switching frequency. So the effective capacitance is significantly lower. The DC bias can also significantly reduce
capacitance. Ceramic capacitors can loss as much as 50% of its capacitance at its rated voltage. Therefore, one
must add margin on the voltage rating to ensure adequate capacitance at the required output voltage.
For a typical boost converter implementation, at least 4.7 μF of ceramic input and output capacitance is
recommended. Additional input and output capacitance may be required to meet ripple and/or transient
requirements.
The popular vendors for high value ceramic capacitors are:
TDK (http://www.component.tdk.com/components.php)
Murata (http://www.murata.com/cap/index.html)
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8.2.2.10 Compensating the Small Signal Control Loop
All continuous mode boost converters have a right half plane zero (ƒRHPZ) due to the inductor being removed
from the output during charging. In a traditional voltage mode controlled boost converter, the inductor and output
capacitor form a small signal double pole. For a negative feedback system to be stable, the fed back signal must
have a gain less than 1 before having 180 degrees of phase shift. With its double pole and RHPZ all providing
phase shift, voltage mode boost converters are a challenge to compensate. In a converter with current mode
control, there are essentially two loops, an inner current feedback loop created by the inductor current
information sensed across RSENSE (40mΩ) and the output voltage feedback loop. The inner current loop allows
the switch, inductor and modulator to be lumped together into a small signal variable current source controlled by
the error amplifier, as shown in Figure 9.
(1-D)
RSENSE
R1
+
_
C2
Vref
C4
RO
2
C5
(optional)
R3
R2
RESR
Figure 9. Small Signal Model of a Current Mode Boost in CCM
The new power stage, including the slope compensation, small signal model becomes:
æ
öæ
ö
s
s
ç1 +
÷ ç1 ÷
2 ´ p ´ ¦ESR ø è
2 ´ p ´ ¦RHPZ ø
´ (1 - D) è
R
´
´ He(s)
GPS (s) = OUT
s
2 ´ RSENSE
1+
2 ´ p ´ ¦P
(12)
Where
¦P =
2
2 p ´ RO ´ C2
¦ESR »
¦RHPZ =
(13)
1
2p ´ RESR ´ C2
(14)
2
æ V
ö
´ ç IN ÷
2p ´ L
è VOUT ø
RO
(15)
And
He(s) =
1
éæ
ù
Se ö
s ´ êç1 +
÷ ´ (1 - D) - 0.5ú
Sn
s2
ø
ëè
û
+
1+
2
¦S W
( p ´ ¦ SW )
(16)
He(s) models the inductor current sampling effect as well as the slope compensation effect on the small signal
response. Note that if Sn > Se, for example, when L is smaller than recommended, the converter operates as a
voltage mode converter and the above model no longer holds.
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The slope compensation in TPS61175 is shown as follows:
V
+ VD - VIN
Sn = OUT
´ RSENSE
L
0.32 V / R4
0.5 mA
Se =
+
16 ´ (1 - D )´ 6pF
6 pF
(17)
Where R4 is the frequency setting resistor
(18)
Figure 10 shows a Bode plot of a typical CCM boost converter power stage.
180
120
Gain
Phase – °
Gain − dB
60
0
–60
Phase
–120
–180
fP
f − Frequency − kHz
Figure 10. Bode Plot of Power Stage Gain and Phase
The TPS61175 COMP pin is the output of the internal trans-conductance amplifier. Equation 19 shows the
equation for feedback resistor network and the error amplifier.
s
1+
2 ´ p ´ ¦Z
R2
HEA = GEA ´ REA ´
´
R2 + R1 æ
ö æ
ö
s
s
ç1 +
÷ ´ ç1 +
÷
2 ´ p ´ ¦P1 ø è
2 ´ p ´ ¦P2 ø
è
where
•
¦ P1
¦P2
GEA and REA are the amplifier’s trans-conductance and output resistance located in the Electrical
Characteristics table.
1
=
2 p ´ R EA ´ C4
(19)
(20)
1
=
(optional)
2p ´ R3 ´ C5
C5 is optional and can be modeled as 10 pF stray capacitance.
(21)
and
¦Z =
1
2p ´ R3 ´ C4
(22)
Figure 11 shows a typical bode plot for transfer function H(s).
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180
90
0
Kcomp
Phase – °
Gain − dB
Phase
–90
Gain
–180
fC × 10. Following this method should lead to a loop with a phase margin near 45 degrees. Lowering
R3 while keeping fZ ≅ fC/10 increases the phase margin and therefore increases the time it takes for the output
voltage to settle following a step load.
In the TPS61175, if the FB pin voltage changes suddenly due to a load step on the output voltage, the error
amplifier increases its transconductance for 8-ms in an effort to speed up the IC’s transient response and reduce
output voltage droop due to the load step. For example, if the FB voltage decreases 10 mV due to load change,
the error amplifier increases its source current through COMP by 5 times; if FB voltage increases 11 mV, the sink
current through COMP is increased to 3.5 times normal value. This feature often results in saw tooth ringing on
the output voltage, shown as Figure 13. Designing the loop for greater than 45 degrees of phase margin and
greater than 10-db gain margin minimizes the amplitude of this ringing. This feature is disabled during soft start.
18
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8.2.3 Application Curves
VOUT
500 mV/div
AC
VIN
1 V/div
AC
VOUT
100 mV/div
AC
ILOAD
200 mA/div
t - 100 ms/div
t - 200 ms/div
Figure 13. Load Transient Response
Figure 12. Line Transient Response
VOUT
1 V/div
20 V offset
SW
20 V/div
VOUT
20 mV/div
AC
IL
500 mA/div
IL
100 mA/div
VOUT
100 mV/div
AC
t - 400 ms/div
t - 400 ns/div
Figure 14. PWM Operation
Figure 15. Pulse Skipping
EN
2 V/div
VOUT
5 V/div
IL
500 mA/div
t - 1 ms/div
Figure 16. Soft Start-up
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9 Power Supply Recommendations
The device is designed to operate from an input voltage supply range between 2.9 V and 18 V. The input power
supply’s output current must be rated according to the supply voltage, output voltage and output current of the
TPS61175.
10 Layout
10.1 Layout Guidelines
•
•
•
•
As for all switching power supplies, especially those running at high switching frequency and high currents,
layout is an important design step. If layout is not carefully done, the regulator could suffer from instability as
well as noise problems. To maximize efficiency, switch rise and fall times are very fast. To prevent radiation
of high frequency noise (for example, EMI), proper layout of the high frequency switching path is essential.
Minimize the length and area of all traces connected to the SW pin and always use a ground plane under the
switching regulator to minimize interplane coupling.
The high current path including the switch, Schottky diode, and output capacitor, contains nanosecond rise
and fall times and must be kept as short as possible.
The input capacitor must not only to be close to the VIN pin, but also to the GND pin in order to reduce the
Iinput supply ripple.
10.2 Layout Example
VIN
INPUT
CAPACITOR
VOUT
INDUCTOR
SCHOTTKY
DIODE
OUTPUT
CAPACITOR
SW
Minimize the area
of SW trace
SW
PGND
SW
PGND
VIN
PGND
PGND
SS
Thermal Pad
EN
NC
FREQ
SYNC
FB
AGND
COMP
Place enough
VIAs around
thermal pad to
enhance thermal
performance
AGND
FEEDBACK
COMPENSATION
NETWORK
Figure 17. TPS61175 Layout
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10.3 Thermal Considerations
Restrict the maximum IC junction temperature to 125°C under normal operating conditions. This restriction limits
the power dissipation of the TPS61175. Calculate the maximum allowable dissipation, PD(maximum), and keep
the actual dissipation less than or equal to PD(maximum). The maximum-power-dissipation limit is determined
using Equation 23:
125 °C - TA
PD(max) =
R qJA
where
•
•
TA is the maximum ambient temperature for the application
RθJA is the thermal resistance junction-to-ambient given in Thermal Information.
(23)
The TPS61175 comes in a thermally enhanced TSSOP package. This package includes a thermal pad that
improves the thermal capabilities of the package. The RθJA of the TSSOP package greatly depends on the PCB
layout and thermal pad connection. The thermal pad must be soldered to the analog ground on the PCB. Using
thermal vias underneath the thermal pad.
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.2 Development Support
11.2.1 Custom Design with WEBENCH Tools
Click here to create a custom design using the TPS61175 device with the WEBENCH® Power Designer.
1. Start by entering your VIN, VOUT and IOUT requirements.
2. Optimize your design for key parameters like efficiency, footprint and cost using the optimizer dial and
compare this design with other possible solutions from Texas Instruments.
3. WEBENCH Power Designer provides you with a customized schematic along with a list of materials with real
time pricing and component availability.
4. In most cases, you will also be able to:
– Run electrical simulations to see important waveforms and circuit performance,
– Run thermal simulations to understand the thermal performance of your board,
– Export your customized schematic and layout into popular CAD formats,
– Print PDF reports for the design, and share your design with colleagues.
5. Get more information about WEBENCH tools at www.ti.com/webench.
11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.5 Trademarks
PowerPad, E2E are trademarks of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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12-Apr-2019
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TPS61175PWP
ACTIVE
HTSSOP
PWP
14
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
61175
TPS61175PWPR
ACTIVE
HTSSOP
PWP
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
61175
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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