TPS61222MDCKTEP

TPS61222MDCKTEP

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOT-363-6(SC-70-6)

  • 描述:

    升压型 400MA 700MV~5.5V

  • 详情介绍
  • 数据手册
  • 价格&库存
TPS61222MDCKTEP 数据手册
TPS61222-EP www.ti.com SLVSBI2 – SEPTEMBER 2012 LOW INPUT VOLTAGE, 0.7-V BOOST CONVERTER WITH 5.5-μA QUIESCENT CURRENT Check for Samples: TPS61222-EP FEATURES 1 • • • • • • • • • Up to 95% Efficiency at Typical Operating Conditions 5.5 μA Quiescent Current Startup Into Load at 0.7 V Input Voltage Operating Input Voltage from 0.7 V to 5.5 V Pass-Through Function During Shutdown Minimum Switching Current 200 mA Protections: – Output Overvoltage – Overtemperature – Input Undervoltage Lockout Fixed Output Voltage Versions Small 6-Pin SC-70 Package APPLICATIONS • • • • • • Battery Powered Applications – 1 to 3 Cell Alkaline, NiCd or NiMH – 1 Cell Li-Ion or Li-Primary Solar or Fuel Cell Powered Applications Consumer and Portable Medical Products Personal Care Products White or Status LEDs Smartphones SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS • • • • • • • (1) Controlled Baseline One Assembly and Test Site One Fabrication Site Available in Military (–55°C to 125°C) Temperature Range (1) Extended Product Life Cycle Extended Product-Change Notification Product Traceability Custom temperature ranges available DESCRIPTION The TPS61222 provides a power-supply solution for products powered by either a single-cell, two-cell, or threecell alkaline, NiCd or NiMH, or one-cell Li-Ion or Li-polymer battery. Possible output currents depend on the input-to-output voltage ratio. The boost converter is based on a hysteretic controller topology using synchronous rectification to obtain maximum efficiency at minimal quiescent currents. The output voltage of the adjustable version can be programmed by an external resistor divider, or is set internally to a fixed output voltage. The converter can be switched off by a featured enable pin. While being switched off, battery drain is minimized. The device is offered in a 6-pin SC-70 package (DCK) measuring 2 mm x 2 mm to enable small circuit layout size. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated TPS61222-EP SLVSBI2 – SEPTEMBER 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. AVAILABLE DEVICE OPTIONS (1) TJ PACKAGE MARKING PACKAGE (2) PART NUMBER VID NUMBER –55°C to 125°C SHL 6-Pin SC-70 TPS61222MDCKTEP V62/12603-01XE (1) (2) Contact the factory to check availability of other fixed output voltage versions. For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) UNIT VIN Input voltage range on VIN, L, VOUT, EN, FB –0.3 to 7.5 V TJ Operating junction temperature range –55 to 145 °C Tstg Storage temperature range –65 to 150 °C 2 kV Human Body Model (HBM) (2) ESD (1) (2) Machine Model (MM) (2) 200 V Charged Device Model (CDM) (2) 1.5 kV Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ESD testing is performed according to the respective JESD22 JEDEC standard. THERMAL INFORMATION TPS61222 THERMAL METRIC (1) DCK UNITS 6 PINS θJA Junction-to-ambient thermal resistance (2) 231.2 θJCtop Junction-to-case (top) thermal resistance (3) 61.8 θJB Junction-to-board thermal resistance (4) 78.8 (5) ψJT Junction-to-top characterization parameter ψJB Junction-to-board characterization parameter (6) 78 θJCbot Junction-to-case (bottom) thermal resistance (7) N/A (1) (2) (3) (4) (5) (6) (7) 2 2.2 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDECstandard test exists, but a close description can be found in the ANSI SEMI standard G30-88. The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP TPS61222-EP www.ti.com SLVSBI2 – SEPTEMBER 2012 RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT VIN Supply voltage at VIN 0.7 5.5 V TJ Operating free air temperature range –55 125 °C ELECTRICAL CHARACTERISTICS TJ = −55°C to 125°C, TJ = TA and over recommended input voltage range (typical at an ambient temperature range of 25°C) (unless otherwise noted) DC/DC STAGE PARAMETER TEST CONDITIONS VIN Input voltage range VIN Minimum input voltage at startup RLoad ≥ 150 Ω VOUT Output voltage (5 V) VIN < VOUT ILH Inductor current ripple ISW Switch current limit VOUT = 5 V, VIN = 1.2 V RDSon_HSD Rectifying switch on resistance RDSon_LSD Main switch on resistance Line regulation Load regulation VIN 4.8 5 MAX UNIT 5.5 V 0.7 V 5.19 V 200 mA 400 mA VOUT = 5 V 700 mΩ VOUT = 5 V 550 mΩ VIN < VOUT 0.5 % VIN < VOUT 0.5 IQ ISD Shutdown current ILKG_L Leakage current into L VEN = 0 V, VIN = 1.2 V, VL = 1.2 V, VOUT ≥ VIN IEN EN input current Clamped on GND or VIN (VIN < 1.5 V) VIN TYP 0.7 Quiescent current VOUT MIN 200 IO = 0 mA, VEN = VIN = 1.2 V, VOUT = 5 V VEN = 0 V, VIN = 1.2 V, VOUT ≥ VIN % 0.5 1.4 μA 5 8.5 μA 0.2 0.96 μA 0.01 0.3 μA 0.005 0.13 μA MAX UNIT CONTROL STAGE PARAMETER TEST CONDITIONS VIL EN input low voltage VIN ≤ 1.5 V VIH EN input high voltage VIN ≤ 1.5 V VIL EN input low voltage 5 V > VIN > 1.5 V VIH EN input high voltage 5 V > VIN > 1.5 V VUVLO Undervoltage lockout threshold for turn off VIN decreasing Overvoltage protection threshold MIN TYP 0.15 × VIN 0.8 × VIN V V 0.34 1.28 V V 0.5 5.5 0.72 7.5 V V Overtemperature protection 140 °C Overtemperature hysteresis 20 °C Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP 3 TPS61222-EP SLVSBI2 – SEPTEMBER 2012 www.ti.com 10000.00 Wirebond Voiding Fail Mode Estimated Life (Years) 1000.00 100.00 Electromigration Failure Mode 10.00 1.00 80 90 100 110 120 130 140 150 160 Continuous TJ (°C) (1) See data sheet for absolute maximum and minimum recommended operating conditions. (2) Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect life). (3) Enhanced plastic product disclaimer applies. Figure 1. TPS61222-EP Operating Life Derating Chart 4 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP TPS61222-EP www.ti.com SLVSBI2 – SEPTEMBER 2012 PIN ASSIGNMENTS DCK PACKAGE (TOP VIEW) VIN FB GND EN L VOUT Terminal Functions TERMINAL NAME NO. I/O DESCRIPTION EN 6 I Enable input (1: enabled, 0: disabled). Must be actively tied high or low. FB 2 I Voltage feedback of adjustable version. Must be connected to VOUT at fixed output voltage versions. GND 3 L 5 I Connection for Inductor VIN 1 I Boost converter input voltage VOUT 4 O Boost converter output voltage Control / logic and power ground FUNCTIONAL BLOCK DIAGRAM L VOUT VOUT VIN Gate Driver VIN Start Up EN Device Control GND Current Sensor FB VREF Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP 5 TPS61222-EP SLVSBI2 – SEPTEMBER 2012 www.ti.com PARAMETER MEASUREMENT INFORMATION L1 L VOUT VOUT R1 VIN VIN C1 C2 FB EN R2 GND TPS6122x Table 1. List of Components (1) COMPONENT REFERENCE PART NUMBER MANUFACTURER VALUE C1 GRM188R60J106ME84D Murata 10 μF, 6.3V. X5R Ceramic C2 GRM188R60J106ME84D Murata 10 μF, 6.3V. X5R Ceramic L1 EPL3015-472MLB Coilcraft 4.7 μH adjustable version: Values depending on the programmed output voltage R1, R2 fixed version: R1= 0 Ω, R2 not used (1) 6 Design was tested using these components at 25°C ambient temperature. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP TPS61222-EP www.ti.com SLVSBI2 – SEPTEMBER 2012 TYPICAL CHARACTERISTICS Table of Graphs FIGURE Maximum Output Current vs Input Voltage Figure 2 vs Output Current, VIN = [0.7 V; 1.2 V; 2.4V; 3.6 V; 4.2 V] Figure 3 vs Input Voltage, IOUT = [100 uA; 1 mA; 10 mA; 50 mA] Figure 4 Input Current at No Output Load, Device Enabled Figure 5 Output Voltage vs Output Current, VIN = [0.7 V; 1.2 V; 2.4 V; 3.6 V] Figure 6 Load Transient Response, VIN = 2.4 V, IOUT = 14 mA to 126 mA Figure 7 Line Transient Response, VIN = 2.8 V to 3.6 V, RLOAD = 100 Ω Figure 8 Efficiency Waveforms MAXIMUM OUTPUT CURRENT vs INPUT VOLTAGE EFFICIENCY vs OUTPUT CURRENT AND INPUT VOLTAGE 300 100 VO = 5 V VO = 5 V 90 80 70 200 h - Efficiency - % Maximum output Current - mA 250 150 100 60 VI = 2.4 V 50 VI = 3.6 V VI = 4.2 V VI = 1.2 V 40 VI = 0.7 V 30 20 50 10 0 0.7 1.2 1.7 2.2 2.7 3.2 3.7 4.2 0 0.01 4.7 0.1 VI - Input Voltage - V 1 IO - Output Current - mA 10 100 Figure 2. Figure 3. EFFICIENCY vs INPUT VOLTAGE AND OUTPUT CURRENT NO LOAD INPUT CURRENT vs INPUT VOLTAGE, DEVICE ENABLED 80 100 VO = 5 V Device Enabled VO = 5 V 70 80 IO = 50 mA 60 II - Input Current - mA h - Efficiency - % IO = 10 mA IO = 1 mA 60 IO = 100 mA 40 50 40 30 20 20 10 0 0.7 1.7 2.7 VI - Input Voltage - V 3.7 4.7 0 0.7 Figure 4. 1.7 2.7 3.7 VI - Input Voltage - V 4.7 Figure 5. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP 7 TPS61222-EP SLVSBI2 – SEPTEMBER 2012 www.ti.com OUTPUT VOLTAGE vs OUTPUT CURRENT AND INPUT VOLTAGE LOAD TRANSIENT RESPONSE 5.2 Offset: 0 A VO = 5 V IL 200 mA/div VO - Output Voltage - V 5.1 VI = 3.6 V IO Offset: 0 A 50 mA/div 5 VI = 2.4 V VO VI = 1.2 V 50 mV/div 4.9 VI = 0.7 V Offset: 5 V VI = 2.4 V, IO = 14 mA to 126 mA 4.8 0.01 0.1 1 IO - Output Current - mA 10 200 ms/div 100 Figure 6. Figure 7. LINE TRANSIENT RESPONSE VI 200 mV/div Offset: 2.8 V VO 20 mV/div VI 2.8 to 3.6 V, RLOAD = 100 W, trise = tfall = 20 ms Offset: 5 V 200 ms/div Figure 8. 8 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP TPS61222-EP www.ti.com SLVSBI2 – SEPTEMBER 2012 DETAILED DESCRIPTION OPERATION The TPS61222 is a high performance, high efficient switching boost converter. To achieve high efficiency the power stage is realized as a synchronous boost topology. For the power switching two actively controlled low RDSon power MOSFETs are implemented. CONTROLLER CIRCUIT The device is controlled by a hysteretic current mode controller. This controller regulates the output voltage by keeping the inductor ripple current constant in the range of 200 mA and adjusting the offset of this inductor current depending on the output load. In case the required average input current is lower than the average inductor current defined by this constant ripple the inductor current gets discontinuous to keep the efficiency high at low load conditions. IL Continuous Current Operation Discontinuous Current Operation 200 mA (typ.) 200 mA (typ.) t Figure 9. Hysteretic Current Operation The output voltage VOUT is monitored via the feedback network which is connected to the voltage error amplifier. To regulate the output voltage, the voltage error amplifier compares this feedback voltage to the internal voltage reference and adjusts the required offset of the inductor current accordingly. At fixed output voltage versions an internal feedback network is used to program the output voltage, at adjustable versions an external resistor divider needs to be connected. The self oscillating hysteretic current mode architecture is inherently stable and allows fast response to load variations. It also allows using inductors and capacitors over a wide value range. Device Enable and Shutdown Mode The device is enabled when EN is set high and shut down when EN is low. During shutdown, the converter stops switching and all internal control circuitry is turned off. In this case the input voltage is connected to the output through the back-gate diode of the rectifying MOSFET. This means that there always will be voltage at the output which can be as high as the input voltage or lower depending on the load. Startup After the EN pin is tied high, the device starts to operate. In case the input voltage is not high enough to supply the control circuit properly a startup oscillator starts to operate the switches. During this phase the switching frequency is controlled by the oscillator and the maximum switch current is limited. As soon as the device has built up the output voltage to about 1.8V, high enough for supplying the control circuit, the device switches to its normal hysteretic current mode operation. The startup time depends on input voltage and load current. Operation at Output Overload If in normal boost operation the inductor current reaches the internal switch current limit threshold the main switch is turned off to stop further increase of the input current. In this case the output voltage will decrease since the device can not provide sufficient power to maintain the set output voltage. If the output voltage drops below the input voltage the backgate diode of the rectifying switch gets forward biased and current starts flow through it. This diode cannot be turned off, so the current finally is only limited by the remaining DC resistances. As soon as the overload condition is removed, the converter resumes providing the set output voltage. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP 9 TPS61222-EP SLVSBI2 – SEPTEMBER 2012 www.ti.com Undervoltage Lockout An implemented undervoltage lockout function stops the operation of the converter if the input voltage drops below the typical undervoltage lockout threshold. This function is implemented in order to prevent malfunctioning of the converter. Overvoltage Protection If, for any reason, the output voltage is not fed back properly to the input of the voltage amplifier, control of the output voltage will not work anymore. Therefore an overvoltage protection is implemented to avoid the output voltage exceeding critical values for the device and possibly for the system it is supplying. For this protection the TPS61222 output voltage is also monitored internally. In case it reaches the internally programmed threshold of 6.5 V typically the voltage amplifier regulates the output voltage to this value. If the TPS61222 is used to drive LEDs, this feature protects the circuit if the LED fails. Overtemperature Protection The device has a built-in temperature sensor which monitors the internal IC junction temperature. If the temperature exceeds the programmed threshold (see electrical characteristics table), the device stops operating. As soon as the IC temperature has decreased below the programmed threshold, it starts operating again. To prevent unstable operation close to the region of overtemperature threshold, a built-in hysteresis is implemented. 10 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP TPS61222-EP www.ti.com SLVSBI2 – SEPTEMBER 2012 APPLICATION INFORMATION DESIGN PROCEDURE The TPS61222 DC/DC converter is intended for systems powered by a single cell battery to up to three Alkaline, NiCd or NiMH cells with a typical terminal voltage between 0.7 V and 5.5 V. It can also be used in systems powered by one-cell Li-Ion or Li-Polymer batteries with a typical voltage between 2.5 V and 4.2 V. Additionally, any other voltage source with a typical output voltage between 0.7 V and 5.5 V can be used with the TPS61222. Programming the Output Voltage Output voltage The output voltage is set by a resistor divider internally. The FB pin is used to sense the output voltage. To configure the fixed output devices properly, the FB pin needs to be connected directly to VOUT as shown in Figure 10. L1 L VIN VOUT VOUT VIN FB C2 EN C1 GND TPS61222 Figure 10. Typical Application Circuit Inductor Selection To make sure that the TPS61222 can operate, a suitable inductor must be connected between pin VIN and pin L. Inductor values of 4.7 μH show good performance over the whole input and output voltage range . Choosing other inductance values affects the switching frequency f proportional to 1/L as shown in Equation 1. L= V ´ (VOUT - VIN ) 1 ´ IN f ´ 200 mA VOUT (1) Choosing inductor values higher than 4.7 μH can improve efficiency due to reduced switching frequency and therefore with reduced switching losses. Using inductor values below 2.2 μH is not recommended. Having selected an inductance value, the peak current for the inductor in steady state operation can be calculated. Equation 2 gives the peak current estimate. ì VOUT ´ IOUT + 100 mA; continous current operation ï IL,MAX = í 0.8 ´ VIN ï200 mA; discontinuous current operation î (2) For selecting the inductor this would be the suitable value for the current rating. It also needs to be taken into account that load transients and error conditions may cause higher inductor currents. Equation 3 provides an easy way to estimate whether the device will work in continuous or discontinuous operation depending on the operating points. As long as the inequation is true, continuous operation is typically established. If the inequation becomes false, discontinous operation is typically established. VOUT ´ IOUT > 0.8 ´ 100 mA VIN (3) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP 11 TPS61222-EP SLVSBI2 – SEPTEMBER 2012 www.ti.com The following inductor series from different suppliers have been used with TPS61222 converters: Table 2. List of Inductors (1) VENDOR Coilcraft INDUCTOR SERIES EPL3015 EPL2010 Murata LQH3NP Tajo Yuden NR3015 Wurth Elektronik WE-TPC Typ S (1) Design was tested using these components at 25°C ambient temperature. Capacitor Selection Input Capacitor At least a 10-μF input capacitor is recommended to improve transient behavior of the regulator and EMI behavior of the total power supply circuit. A ceramic capacitor placed as close as possible to the VIN and GND pins of the IC is recommended. Output Capacitor For the output capacitor C2 , it is recommended to use small ceramic capacitors placed as close as possible to the VOUT and GND pins of the IC. If, for any reason, the application requires the use of large capacitors which can not be placed close to the IC, the use of a small ceramic capacitor with an capacitance value of around 2.2μF in parallel to the large one is recommended. This small capacitor should be placed as close as possible to the VOUT and GND pins of the IC. A minimum capacitance value of 4.7 μF should be used, 10 μF are recommended. If the inductor value exceeds 4.7 μH, the value of the output capacitance value needs to be half the inductance value or higher for stability reasons, see Equation 4. C2 ³ L ´ 2 (4) The TPS61222 is not sensitive to the ESR in terms of stability. Using low ESR capacitors, such as ceramic capacitors, is recommended anyway to minimize output voltage ripple. If heavy load changes are expected, the output capacitor value should be increased to avoid output voltage drops during fast load transients. Layout Considerations As for all switching power supplies, the layout is an important step in the design, especially at high peak currents and high switching frequencies. If the layout is not carefully done, the regulator could show stability problems as well as EMI problems. Therefore, use wide and short traces for the main current path and for the power ground paths. The input and output capacitor, as well as the inductor should be placed as close as possible to the IC. The feedback divider should be placed as close as possible to the control ground pin of the IC. To lay out the ground, it is recommended to use short traces as well, separated from the power ground traces. This avoids ground shift problems, which can occur due to superimposition of power ground current and control ground current. Assure that the ground traces are connected close to the device GND pin. THERMAL INFORMATION Implementation of integrated circuits in low-profile and fine-pitch surface-mount packages typically requires special attention to power dissipation. Many system-dependent issues such as thermal coupling, airflow, added heat sinks and convection surfaces, and the presence of other heat-generating components affect the powerdissipation limits of a given component. 12 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP TPS61222-EP www.ti.com SLVSBI2 – SEPTEMBER 2012 Three basic approaches for enhancing thermal performance are listed below. • Improving the power-dissipation capability of the PCB design • Improving the thermal coupling of the component to the PCB • Introducing airflow in the system For more details on how to use the thermal parameters in the dissipation ratings table please check the Thermal Characteristics Application Note (SZZA017) and the IC Package Thermal Metrics Application Note (SPRA953). Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links :TPS61222-EP 13 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS61222MDCKTEP ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 125 SHL V62/12603-01XE ACTIVE SC70 DCK 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 125 SHL (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
TPS61222MDCKTEP
物料型号:TPS61222-EP 器件简介:TPS61222-EP 是德州仪器公司生产的一款低输入电压、高效率的升压转换器,具有5.5 μA的超低静态电流,适用于电池供电设备。

引脚分配:1号引脚为输入电压VIN,2号引脚为反馈FB,3号引脚为地GND,4号引脚为输出电压VOUT,5号引脚为电感L,6号引脚为使能输入EN。

参数特性:支持0.7V至5.5V的输入电压范围,可提供高达95%的效率,最小开关电流为200mA,并具备多种保护功能。

功能详解:基于滞后控制器拓扑结构,使用同步整流技术以实现最大效率和最小静态电流。

输出电压可由外部电阻分压器设定或内部设定为固定值。

应用信息:适用于1至3节碱性、镍镉或镍氢电池供电的应用,也适用于1节锂离子或锂一次电池供电的应用,如便携式医疗产品、个人护理产品、智能手机等。

封装信息:采用6引脚SC-70小型封装,尺寸为2mm x 2mm,有助于实现小型电路板布局。
TPS61222MDCKTEP 价格&库存

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TPS61222MDCKTEP
  •  国内价格
  • 1+101.59560
  • 10+67.73040
  • 30+56.44200

库存:0