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TPS61391
SLVSFE7 – NOVEMBER 2019
TPS61391 85-VOUT Boost Converter with Current Mirror Integrated
1 Features
3 Description
•
•
•
•
•
The TPS61391 is a 700-kHz pulse-width modulating
(PWM) step-up converter with an 85-V switch FET
with an input ranging from 2.5 V to 5.5 V. The
switching peak current is up to 1000 mA. The
TPS61391 includes accurate current mirror with two
gain options selectable (1 : 5 or 4 : 5).
1
•
•
•
•
Input voltage range: 2.5 V to 5.5 V
Output voltage range: up to 85 V
R(DS)on of switching FET: 0.9 Ω
Switch current limit: 1000 mA
High optical power protection with 0.5-µs
response time
Switching frequency: 700 kHz
Quiescent current: 110 µA from VIN, 340 µA from
VOUT, 140 µA from AVCC
Soft-start time: 4.8 ms
Package: 3 mm × 3 mm × 0.75 mm QFN
The TPS61391 also provides high optical-power
protection with an additional FET in series with the
APD power path with the typical response time of 0.5
µs . It can recover automatically once the high optical
releasing.
The TPS61391 is available in 3 mm × 3 mm QFN
package with exposed pad underneath.
2 Applications
•
•
•
Device Information(1)
PART NUMBER
APD bias
Optical line terminal
High-voltage sensor supply
PACKAGE
TPS61391
WQFN (16)
BODY SIZE (NOM)
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Circuit
Diode
L
VIN
VOUT
COUT1
VIN
ON
OFF
RPROTECT
SW
CFILTER
MONIN
EN
RUP
VOUT_ADJ
FB
CAP
RADJ
CCAP
VIN
RFILTER
RDOWN
ISHORT
RSVCC
RSHORT
AVCC
CAVCC
CAP
CCAP
AGND
APD
MON2
CMON2
1:5
MON1 GND
CMON1 4:5
RMON2
RMON1
CAPD
TIA
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS61391
SLVSFE7 – NOVEMBER 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
4
6
Recommended Operating Conditions.......................
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
7.4 Device Functional Mode ......................................... 10
8
Application and Implementation ........................ 11
8.1 Application Information............................................ 11
8.2 Typical Application ................................................. 11
9 Power Supply Recommendations...................... 14
10 Layout................................................................... 15
10.1 Layout Guidelines ................................................. 15
10.2 Layout Example .................................................... 16
11 Device and Documentation Support ................. 17
11.1
11.2
11.3
11.4
11.5
11.6
Detailed Description .............................................. 8
7.1 Overview ................................................................... 8
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
Documentation Support .......................................
Receiving Notification of Documentation Updates
Support Resources ...............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
17
17
12 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
2
DATE
REVISION
NOTES
Nov. 2019
*
Initial release.
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5 Pin Configuration and Functions
NC
1
NC
2
AGND
AVCC
AVCC
EN
16
15
14
13
RTE Package
16-Pin WQFN
Top View
12
FB
11
ISHORT
10
VIN
9
CAP
Thermal
6
7
8
GND
SW
4
MONIN
MON1
Pad
5
3
APD
MON2
Not to scale
Pin Functions
PIN
NAME
NO.
NC
I/O
DESCRIPTION
1,2
N/A
MON2
3
O
No internal connection
Current mirror output pin of 1 : 5 ratio (Mirror current: APD current)
MON1
4
O
Current mirror output pin of 4 : 5 ratio (Mirror current: APD current)
APD
5
O
Power supply for the APD, connect this pin with the cathode of APD
MONIN
6
I
Current mirror input pin
GND
7
–
Power Ground
SW
8
PWR
CAP
9
O
Connecting a capacitor externally to lower the noise for current mirror.
VIN
10
I
IC power supply input
ISHORT
11
O
Programming the current limit for high optical power protection by a resistor between this pin and
GND.
FB
12
I
Feedback voltage
EN
13
I
Enable logic input. Logic high level enables the device. Logic low level disables the device and turns it
into shutdown mode
The switching node pin of the converter. It is connected to the drain of the internal low-side power
MOSFET and the source of the internal high-side power MOSFET
AVCC
14,15
I
Power supply for the current monitor circuitry
AGND
16
–
Analog ground for the current monitor circuitry
Exposed Thermal Pad
Connect with GND, TI recommends connecting to Power GND on PCB
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6 Specifications
6.1 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VIN
Input voltage
VOUT
Output voltage
TJ
Junction temperature
L
Effective Inductance
CIN
Effective Input Capacitance
COUT
Effective Output Capacitance
NOM
MAX
2.5
UNIT
5.5
V
20
85
V
–40
125
°C
4.7
µH
1
µF
0.1
µF
6.2 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
SW, APD, MONIN,CAP
–0.3
85
Other pins
–0.3
6
V
TJ
Operating junction temperature
–40
125
°C
Tstg
Storage temperature
–65
150
°C
Voltage
(1)
UNIT
V
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.3 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, allpins (1)
±1500
Charged device model (CDM), per JEDEC
specificationJESD22-C101, all pins (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.4 Thermal Information
TPS61391
THERMAL METRIC (1)
RTE (WQFN)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
52.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
54.4
°C/W
RθJB
Junction-to-board thermal resistance
27.9
°C/W
ΨJT
Junction-to-top characterization parameter
2.0
°C/W
YJB
Junction-to-board characterization parameter
27.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
12.8
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
Over recommended free-air temperature range, VIN = 3.3 V, AVCC = 3.3 V, VMONIN = 20 V to 85 V, TJ = - 40°C to 125°C,
typical values are at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLY
VIN
4
Input voltage range
2.5
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5.5
V
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Electrical Characteristics (continued)
Over recommended free-air temperature range, VIN = 3.3 V, AVCC = 3.3 V, VMONIN = 20 V to 85 V, TJ = - 40°C to 125°C,
typical values are at TA = 25°C (unless otherwise noted)
TYP
MAX
Under voltage lock out
PARAMETER
VIN falling
2.4
2.5
Under voltage lock out hysteresis
VUVLO rising - VUVLO falling
200
IQ_IN
Quiescent current into VIN pin
VIN = 3.3 V, VFB =VREF + 0.1 V, No
switching, -40 °C ≤ TJ ≤ 85 °C
110
140
uA
IQ_OUT
Quiescent current into VOUT pin
VIN = 3.3 V, VFB =VREF + 0.1 V,No
switching, -40 °C ≤ TJ ≤ 85 °C
340
430
uA
IQ_VCC
Quiescent current into AVCC pin
AVCC = 3.3 V -40 °C ≤ TJ ≤ 85 °C
140
180
uA
Shutdown current into VIN pin
2.5 V ≤ VIN ≤ 5.5 V, EN = 0, -40 °C ≤
TJ ≤ 85 °C
1
uA
1
uA
1
uA
VUVLO
ISD
Shutdown current into VOUT pin
Shutdown current into AVCC pin
TEST CONDITIONS
MIN
EN = 0, -40 °C ≤ TJ ≤ 85 °C
AVCC = 3.3 V, EN = 0, -40 °C ≤ TJ ≤
85 °C
UNIT
V
mV
OUTPUT
VOUT
Output voltage range
VIN = 2.5 V to 5.5 V, TJ = 25 °C
VREF
Feedback regulation reference voltage VIN = 2.5 V to 5.5 V, -40 °C ≤ TJ ≤
125 °C
IFB
Feedback input leakage current
85
V
1.188
1.2
1.212
V
1.182
1.2
1.218
V
1
25
nA
900
1300
mΩ
kHz
POWER SWITCH
RDS(on)
Low-side FET on resistance
3 V ≤ VIN ≤ 5.5 V
SWITCHING CHARACTERISTIC
fSW
Switching frequency
VIN = 3.3 V, VOUT = 60 V
600
700
800
CURRENT MIRROR
kMON1
4:5 Current mirror gain
IAPD = 5 µA to 200 µA
0.76
0.8
0.84
kMON2
1:5 Current mirror gain
IAPD = 100 µA to 2 mA
0.19
0.2
0.21
VMON
MON1 / MON2 Threshold
380
400
420
mV
2.2
2.5
2.8
V
VAPD_DRP
Current mirror voltage drop
IBIAS
Current mirror bias current
IAPD = 1 mA
IAPD = 5 µA
2.45
V
15
20
25
µA
VIN = 3.3 V, VOUT = 60 V
800
1000
1200
mA
RISHORT = 25 kΩ
3.7
4
4.3
mA
RISHORT = 50 kΩ
1.8
2
2.2
mA
1.2
V
CURRENT LIMIT
ILIM_SW
ISHORT
Peak switching current limit
High optical power current limit
CONTROL (EN)
VEN_H
EN Logic high threshold
VEN_L
EN Logic low threshold
REN
EN pull down resistor
0.4
V
800
kΩ
TIMING
tSS
Soft start time
Ref voltage 0 to 1.2V
4.8
ms
tDELAY
Delay time for high optical power
protection
IAPD = 5 mA, ISHORT = 3 mA
0.5
µs
150
°C
20
°C
THERMAL PROTECTION
TSD
Thermal shutdown threshold
TJ rising
TSD_HYS
Thermal shutdown hysteresis
TJ falling below TSD
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6.6 Typical Characteristics
80
41
40.8
40.6
Output Voltage (V)
Efficiency (%)
60
40
40.4
40.2
40
39.8
39.6
20
39.4
VOUT (V)
60
40
39.2
39
0
5E-6 1E-5 2E-5
0.0001
0.001
Output Current (A)
VIN = 3.3 V
Output current
(boost) = 0 to 8 mA
0.005
0
0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008
Output Current (A)
D002
D001
L = 4. 7 µH
COUT = 0.1 µF
VIN = 3.3 V
Output current
(boost) = 0 to 8 mA
135
1.2005
130
1.2
1.1995
1.199
1.1985
1.198
125
120
115
110
-40oC
25oC
85oC
105
1.1975
1.197
-40
COUT = 0.1 µF
Figure 2. Load regulation
1.201
Quiescent current (PA)
Reference Voltage (V)
Figure 1. Efficiency vs. Output Current
L = 4. 7 µH
-20
VIN = 3.3 V
0
20
40
60
80
Temperature (qC)
100
VOUT = 60 V
120
100
2.4
140
2.7
3
3.3
D003
COUT = 0.1 µF
3.6 3.9 4.2 4.5
Input voltage (V)
4.8
5.1
5.4
5.7
D004
VOUT = 60 V
Figure 4. Quiescent current vs. Input voltage
Figure 3. Reference voltage
380
1200
370
1000
365
Rdson (m:)
Quiescent current (PA)
375
360
355
350
800
600
-40qC
25qC
85qC
345
340
20 25 30 35 40 45 50 55 60 65 70 75 80 85
Output voltage (V)
D005
VIN = 3.3 V
VIN = 3.3 V
400
-40
VIN = 3.3 V
Figure 5. Quiescent current vs. Output voltage
6
-20
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0
20
40
60
80
Temperature (qC)
100
120
140
D006
VOUT = 60 V
Figure 6. Rdson vs. Temperature
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Typical Characteristics (continued)
2.75
Voltage drop of current mirror (V)
2.7
2.6
UVLO (V)
2.5
2.4
2.3
2.2
2.1
-40
Rising
Falling
2.7
2.65
2.6
2.55
TJ (qC)
25
-40
85
2.5
2.45
-20
0
20
40
60
Temperature (qC)
80
100
120
0
200
400
600
D007
VOUT = 60 V
VIN = 3.3 V
Figure 7. Vin UVLO
800 1000 1200 1400 1600 1800 2000
APD current (PA)
D008
VOUT = 60 V
Figure 8. Voltage drop of current mirror vs. current
Switching frequency (kHz)
860
810
760
710
660
0.005 0.01 0.02
VIN = 3.3 V
0.05 0.1 0.2 0.3 0.5
Output current (mA)
1
2 3 4 5 678
D009
VOUT = 60 V
Figure 9. Switching frequency vs. Output current
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7 Detailed Description
7.1 Overview
The TPS61391 is a fully integrated boost converter with an 85-V FET to convert a low input voltage to a higher
voltage for biasing the APD. The TPS61391 supports an input voltage ranging from 2.5 V to 5.5 V. The device
operates at a 700 kHz pulse-width modulation (PWM) crossing the whole load range.
There are two ratio options for the current proportional to APD current: the MON1 (4 : 5) and MON2 (1 : 5). By
connecting a resistor from the mirror output (MON1 or MON2) to GND, the current flowing through the APD is
converted into the voltage crossing the resistor from MON1 / MON2 to GND.
Additionally, a high power optical protection is integrated by clamping the pre-set current limit (program by the
ISHORT resistor). The response time of the high optical power is typically 0.5 µs. The device could recovery
automatically when the high optical power is removed.
The device comes in a 3-mm × 3-mm QFN package with the operating junction temperature covering from –40°C
to 125°C.
8
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7.2 Functional Block Diagram
SW
DRIVER
Control
MONIN
REG
VREF
Q
R
S
FB
VCC
VIN
ISHORT
EN
ISHORT_REF
ISHORT_SEN
AVCC
Current
mirror
control
CAP
1:5
4:5
APD
AGND
MON2
MON1
GND
7.3 Feature Description
7.3.1 Undervoltage Lockout
An undervoltage lockout (UVLO) circuit stops the operation of the converter when the input voltage drops below
the typical UVLO threshold of 2.5 V. A hysteresis of 200 mV is added so that the device cannot be enabled again
until the input voltage goes up to 200 mV.
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Feature Description (continued)
7.3.2 Enable and Disable
When the input voltage is above maximal UVLO rising threshold of 2.5 V and the EN pin is pulled above the high
threshold (1.2 V min.), the TPS61391 is enabled. When the EN pin is pulled below the low threshold (0.4
maximum), the device goes into shutdown mode.
7.3.3 Current Mirror
There are two current mirror options for TPS61391: the gain of 4: 5 (MON1) and 1: 5 (MON2). The maximum
voltage of MON1 and MON2 is 2.5 V.
7.3.4 High Optical Power Protection
There is an additional FET in series of power path connecting with the APD. When the current flowing through
the APD exceeds the short protection threshold (set by connecting the resistor from ISHORT to GND), the on
resistance of the FET becomes larger to clamp the current within the protection threshold by lowering the APD
bias voltage. It takes typically 0.5 µs for the FET to respond in case of high optical power occuring.
When the high optical power condition releases, the TPS61391 recovers automatically back to the normal
operation mode.
7.4 Device Functional Mode
7.4.1 PFM Operation
The TPS61391 integrates a power save mode with pulse frequency modulation (PFM) at the light load. When a
light load condition occurs, the COMP pin voltage naturally decreases and reduces the peak current. When the
COMP pin voltage further goes down with the load lowered and reaches the pre-set low threshold, the output of
the error amplifier is clamped at this threshold and does not go down any more. If the load is further lowered, the
device skips the switching cycles and reduces the switching losses and improves efficiency at the light load
condition by reducing the average switching frequency.
10
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS61391 is a step-up DC/DC converter with current monitor circuitry integrated. The following design
procedure can be used to select component values for the TPS61391. This section presents a simplified
discussion of the design process.
8.2 Typical Application
This application is designed for 2.5-V to 5.5-V input, and 60-V output user case
Diode
L
VIN
VOUT
COUT1
VIN
ON
OFF
RFILTER
RPROTECT
SW
CFILTER
MONIN
EN
RUP
VOUT_ADJ
FB
CAP
RADJ
RDOWN
CCAP
VIN
ISHORT
RSVCC
RSHORT
AVCC
CAVCC
CAP
CCAP
AGND
APD
MON2
CMON2
1:5
MON1 GND
CMON1 4:5
RMON2
RMON1
CAPD
TIA
Figure 10. TPS61391 Typical Application
8.2.1 Design Requirement
For this design example, use Table 1 as the design parameters.
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Typical Application (continued)
Table 1. Design Parameters
PARAMETER
VALUE
Input voltage range
2.5 V to 5.5 V
Output voltage
60 V
Operating frequency
700 kHz
APD Current
0 to 2 mA
8.2.2 Detailed Design Procedure
8.2.2.1 Selecting the Rectifier Diode
A Schottky diode is the preferred type for the rectifier diode due to its low forward voltage drop and small reverse
recovery charge. Low reverse leakage current is important parameter when selecting the Schottky diode. The
diode must be rated to handle the maximum output voltage plus the switching node ringing. Also, it must be able
to handle the average output current.
8.2.2.2 Selecting the Inductor
It is suggested that the TPS61391 device works in the DCM operation; otherwise the output voltage would not be
delivered for low input voltage to high output voltage.
With the device working in DCM operation, the maximum inductor could be calculated by equation Equation 1
and Equation 2:
L MAX =
VIN ´ D
fSW ´ ILIM
where
•
•
•
•
VIN is input voltage
D is duty cycle
fSW is switching frequency
ILIM is current limit
(1)
For instance, if VIN = 3.3 V, VOUT = 60 V, fSW = 600 kHz, ILIM = 0.8 A, the LMAX = 6.5 µH
However, there is minimum inductance is determined by the power delivered to the output side at given input
condition.
L MIN = 2 ´
V OUT ´ IOUT
eff ´ fSW ´ ILIM 2
where
•
•
•
•
•
VOUT is output voltage
IOUT is output current
eff is the efficiency
fSW is switching frequency
ILIM is current limit
(2)
For instance, if IOUT = 8 mA, VOUT = 60 V, fSW = 600 kHz, ILIM = 0.8 A, eff = 0.6, the LMIN = 4.2 µH
With the calculation aforementioned, the operating inductor is recommended between the LMIN and LMAX.
The 4.7 µH inductance is optimum value for using the TPS61391 in application.
8.2.2.3 Selecting Output Capacitor
Use low ESR capacitors at the output to minimize output voltage ripple. Use only X5R and X7R types, which
retain their capacitance over wider voltage and temperature ranges than other types. Typically use a 0.1-μF to 1μF capacitor for output voltage. Take care when evaluating the derating of a ceramic capacitor under the DC
bias. Ceramic capacitors can derate its capacitance at its rated voltage. Therefore, consider enough margins on
the voltage rating to ensure adequate capacitance at the required output voltage.
12
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8.2.2.4 Selecting Filter Resistor and Capacitor
TI recommends an additional R-C filter be added for low ripple applications. The filter parameters is
characterized based on the ripple requirement. Typically, use a 100-Ω and 0.1-µF filter to reduce the switching
output ripple.
8.2.2.5 Setting the Output Voltage
The output voltage of the TPS61391 is externally adjustable using a resistor divider network. The relationship
between the output voltage and the resistor divider is given by Equation 3.
RUP
VOUT = VFB ´ (1 +
)
RDOWN
where
•
•
•
VOUT is the output voltage
RUP the top divider resistor
RDOWN is the bottom divider resistor
(3)
Choose RDOWN to be approximately 10 kΩ. Slightly increasing or decreasing RDOWN can result in closer output
voltage matching when using standard value resistors. In this design, RDOWN = 10 kΩ and RUP = 487 kΩ,
resulting in an output voltage of 60 V.
8.2.2.6 Selecting Capacitor for CAP pin
TI recommends placing a ceramic capacitor from CAP pin to GND to lower the noise for the APD current mirror.
A ceramic capacitor between 10 nF and 100 nF is recommended from CAP pin to GND.
8.2.2.7 Selecting Capacitor for AVCC pin
The control circuitry is powered by AVCC. A ceramic capacitor must be placed close to AVCC, with a typical
capacitor value of 2.2 µF.
8.2.2.8 Selecting Capacitor for APD pin
A ceramic capacitor is required to make the APD current mirror more accurately against the noise coupling. The
recommended values are from 100 pF to 470 pF.
8.2.2.9 Selecting the Resistors of MON1 or MON2
The TPS61391 provides two currents proportional to APD current on the MON pins, 4 : 5 and 1 : 5. The voltage
of the resistors connecting to the MON pins convert the APD current to voltage.
8.2.2.10 Selecting the Capacitors of MON1 or MON2
The capacitors are added to the MON1 or MON2 pins to decouple the noise of APD transient current.
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8.2.2.11 Selecting the Short Current Limit
The output current short-protection threshold of the TPS61391 can be programmed by an external resistor using
Equation 4.
ISHORT =
100
R SHORT
where
•
•
ISHORT (mA) is the short protection threshold
RSHORT(kΩ) is the resistor connecting from ISHORT pin to GND
(4)
For instance, if RSHORT = 25 kΩ, the ISHORT = 4 mA.
8.2.3 Application Curves
Typical condition VIN = 3.3 V, VOUT = 60 V, RSHORT = 5 kΩ, RMON1/2 = 3.01 kΩ and CMON1/2 = 10 pF.
Application waveforms are measured with the inductor 4.7 µH and the output capacitance 0.1 µF at room
temperature.
CH2: EN
2.0 V / DIV
CH1: VMONIN_ripple (AC)
20 mv / DIV
CH3: VOUT
20 V / DIV
CH4: Inductor current,
500 mA / DIV
CH4: Inductor current
500 mA / DIV
Time 1 us / DIV
VIN = 3.3 V
VOUT = 60 V
Time 2ms / DIV
APD current = 1
mA
VIN = 3.3 V
Figure 11. Output voltage ripple with 100 Ω / 0.1 µF filter
VOUT = 60
V
APD current = 1mA
Figure 12. Startup
9 Power Supply Recommendations
The device is designed to operate from an input voltage supply range between 2.5 V and 5.5 V. This input supply
must be well regulated. If the input supply is located more than a few inches from the device, the bulk
capacitance may be required in addition to the ceramic bypass capacitors. An electrolytic capacitor with a value
of 47 µF is a typical choice.
14
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10 Layout
10.1 Layout Guidelines
The basic PCB board layout requires a separation of sensitive signal and power paths. If the layout is not
carefully done, the regulator could suffer from the instability or noise problems. Use the following checklist to get
good performance for a well-designed board:
• Minimize the high current path including the switch FET, rectifier FET, and the output capacitor. This loop
contains high di / dt switching currents (nano seconds per ampere) and easy to transduce the high frequency
noise;
• Place the noise sensitive network like current mirror output (MON1, MON2) being far away from the SW
trace;
• Split the ground for the power GND, signal GND. Use a separate ground trace to connect the current monitor
and boost circuitry. Connect this ground trace to the main power ground at a single point to minimize
circulating currents.
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10.2 Layout Example
GND
AGND
C
R
EN
AVCC
AVCC
AGND
R
R
FB
NC
R
ISHORT
NC
C
GND
VIN
MON2
C
R
MON1
CAP
R
GND
MONIN
APD
AGND
SW
VIN
L
D
APD
C
R
C
GND
TIA
VOUT
Figure 13. Layout Example
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• TPS61391EVM-058 Evaluation Module User's Guide, SLVUBS9
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OUTLINE
RTE0016J
WQFN - 0.8 mm max height
SCALE 3.600
PLASTIC QUAD FLATPACK - NO LEAD
3.15
2.85
A
B
PIN 1 INDEX AREA
3.15
2.85
0.8
0.7
C
SEATING PLANE
0.05
0.00
0.08
1.66 0.1
(0.1) TYP
5
8
EXPOSED
THERMAL PAD
12X 0.5
4
9
4X
1.5
SYMM
17
1
12
16X
PIN 1 ID
(OPTIONAL)
16
SYMM
16X
13
0.30
0.18
0.1
0.05
C A B
0.5
0.3
4224278/A 05/2018
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
RTE0016J
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 1.66)
SYMM
13
16
16X (0.6)
1
12
16X (0.24)
SYMM
17
(2.8)
(0.58)
TYP
12X (0.5)
9
4
( 0.2) TYP
VIA
5
(R0.05)
ALL PAD CORNERS
8
(0.58) TYP
(2.8)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:20X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
EXPOSED
METAL
SOLDER MASK
OPENING
EXPOSED
METAL
NON SOLDER MASK
DEFINED
(PREFERRED)
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4224278/A 05/2018
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
RTE0016J
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 1.51)
16
13
16X (0.6)
1
12
16X (0.24)
17
SYMM
(2.8)
12X (0.5)
9
4
METAL
ALL AROUND
5
SYMM
8
(R0.05) TYP
(2.8)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 17:
84% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:25X
4224278/A 05/2018
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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PACKAGE OPTION ADDENDUM
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29-Sep-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS61391RTER
ACTIVE
WQFN
RTE
16
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
22GH
TPS61391RTET
ACTIVE
WQFN
RTE
16
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
22GH
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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