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TPS6283810YFPT

TPS6283810YFPT

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    XFBGA6

  • 描述:

    IC REG BUCK ADJUSTABLE 3A 6DSBGA

  • 数据手册
  • 价格&库存
TPS6283810YFPT 数据手册
Order Now Product Folder Support & Community Tools & Software Technical Documents TPS6283810 SLVSEX7 – DECEMBER 2018 TPS6283810, Tiny 6-pin 3-A Step-Down Converter in 1.2-mm x 0.8-mm WCSP 1 Features 3 Description • • • • • • • • • • • • • The device is a high-frequency synchronous stepdown converter optimized for small solution size and high efficiency. With an input voltage range of 2.4 V to 5.5 V, common battery technologies are supported. At medium to heavy loads, the converter operates in PWM mode and automatically enters Power Save Mode operation at light load to maintain high efficiency over the entire load current range. The 3.5MHz switching frequency allows the device to use small external components. Together with its DCScontrol architecture, excellent load transient performance and output voltage regulation accuracy are achieved. Other features like over current protection, thermal shutdown protection, active output discharge and power good are built-in. The device is available in a 6-pin WCSP package. 1 DCS-Control™ Topology 1-V Fixed Output Voltage, with 1% Accuracy 26mΩ and 26mΩ Internal Power MOSFETs 2.4-V to 5.5-V Input Voltage Range 4-μA Operating Quiescent Current 3.5-MHz Switching Frequency Power Save Mode for Light Load Efficiency Active Output Discharge Power Good Output Thermal Shutdown Protection Hiccup Short-Circuit Protection Available in 0.8 x 1.2 x 0.5-mm 6-Pin WCSP Create a Custom Design Using the TPS6283810 With the WEBENCH® Power Designer PART NUMBER 2 Applications • • • • Device Information(1) TPS6283810 Consumer Wireless Modules Wearable Products Smart Phones Optical Modules PACKAGE BODY SIZE (NOM) YFP (6) 1.2mm x 0.8mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Spacer Typical Application Schematic TPS6283810 VIN R3 100 k C1 4.7 µF EN Efficiency VOUT 1.0 V L1 0.24 µH 100 SW FB C2 10 µF 95 C3 10 µF 90 85 VPG PG GND Copyright Ú 2018, Texas Instruments Incorporated Efficiency (%) VIN 2.4 V to 5.5 V 80 75 70 65 60 55 50 100P VIN = 2.5V VIN = 3.3V VIN = 4.2V VIN = 5.0V 1m 10m Load (A) 100m 1 3 D003 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPS6283810 SLVSEX7 – DECEMBER 2018 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 4 6 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. ELECTRICAL CHARACTERISTICS ........................ Typical Characteristics .............................................. Detailed Description .............................................. 7 7.1 7.2 7.3 7.4 Overview ................................................................... Functional Block Diagram ......................................... Feature Description................................................... Device Functional Modes.......................................... 7 7 7 9 8 Application and Implementation ........................ 10 8.1 Application Information............................................ 10 8.2 Typical Application ................................................. 10 9 Power Supply Recommendations...................... 15 10 Layout................................................................... 15 10.1 Layout Guidelines ................................................. 15 10.2 Layout Example .................................................... 15 10.3 Thermal Considerations ........................................ 15 11 Device and Documentation Support ................. 16 11.1 11.2 11.3 11.4 11.5 11.6 Device Support...................................................... Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 16 16 16 16 16 16 12 Mechanical, Packaging, and Orderable Information ........................................................... 17 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. 2 DATE REVISION NOTES December 2018 * Initial release Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 TPS6283810 www.ti.com SLVSEX7 – DECEMBER 2018 5 Pin Configuration and Functions YFP Package Top View YFP Package Bottom View 1 A 2 EN C FB GND B PG SW A EN VIN SW FB C 2 VIN PG B 1 GND Not to scale Not to scale Pin Functions PIN I/O DESCRIPTION A1 I Device enable pin. To enable the device, this pin needs to be pulled high. Pulling this pin low disables the device. Do not leave floating. PG B1 O Power good open drain output pin. The pull-up resistor can be connected to voltages up to 5.5 V. If unused, leave it floating. FB C1 I Feedback pin. For the fixed output voltage versions, this pin must be connected to the output. GND C2 SW B2 PWR Switch pin of the power stage. VIN A2 PWR Input voltage pin. NAME NO. EN Ground pin. Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 3 TPS6283810 SLVSEX7 – DECEMBER 2018 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings (1) Voltage at Pins (2) Temperature (1) (2) (3) MIN MAX VIN, FB, EN, PG –0.3 6 SW (DC) –0.3 VIN + 0.3 SW (DC, in current limit) -1.0 VIN + 0.3 SW (AC, less than 10ns) (3) -2.5 10 Operating Junction, TJ –40 150 Storage, Tstg –65 150 UNIT V °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. While switching 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged device model (CDM), per JEDEC specification JESD22-C101 (2) ±500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions MIN NOM MAX UNIT VIN Input voltage range 2.4 5.5 V VOUT Output voltage range 0.6 4 V IOUT Output current range (1) 0 3 A 1 mA ISINK_PG Sink current at PG pin VPG Pull-up resistor voltage TJ Operating junction temperature (1) –40 5.5 V 125 °C Lifetime is reduced when operating continuously at IOUT = 3 A and the junction temperature ≥ 105 °C. 6.4 Thermal Information THERMAL METRIC (1) TPS6283810 YFP (6-PINS), JEDEC UNIT RθJA Junction-to-ambient thermal resistance 141.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 1.7 °C/W RθJB Junction-to-board thermal resistance 47.3 °C/W ψJT Junction-to-top characterization parameter 0.5 °C/W ψJB Junction-to-board characterization parameter 47.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W (1) 6.5 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. ELECTRICAL CHARACTERISTICS TJ = -40 °C to 125 °C, and VIN = 2.4 V to 5.5 V. Typical values are at TJ = 25 °C and VIN = 5 V , unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 4 10 µA 0.05 0.5 µA SUPPLY IQ Quiescent current EN = High, no load, device not switching ISD Shutdown current EN = Low, TJ = -40℃ to 85℃ 4 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 TPS6283810 www.ti.com SLVSEX7 – DECEMBER 2018 ELECTRICAL CHARACTERISTICS (continued) TJ = -40 °C to 125 °C, and VIN = 2.4 V to 5.5 V. Typical values are at TJ = 25 °C and VIN = 5 V , unless otherwise noted. PARAMETER VUVLO TJSD TEST CONDITIONS MIN 2.1 TYP MAX 2.2 2.3 UNIT Under voltage lock out threshold VIN falling Under voltage lock out hysteresis VIN rising 160 mV V Thermal shutdown threshold TJ rising 150 °C Thermal shutdown hysteresis TJ falling 20 °C LOGIC INTERFACE EN VIH High-level threshold voltage VIL Low-level threshold voltage IEN,LKG Input leakage current into EN pin 1.0 V 0.01 0.4 V 0.1 µA SOFT START, POWER GOOD tSS Soft start time Power good lower threshold VPG Power good upper threshold Time from EN high to 95% of VOUT nominal 1.25 ms VPG rising, VFB referenced to VOUT nominal 94 96 98 % VPG falling, VFB referenced to VOUT nominal 90 92 94 % VPG rising, VFB referenced to VOUT nominal 103 105 107 % VPG falling, VFB referenced to VOUT nominal 108 110 112 % VPG,OL Low-level output voltage Isink = 1 mA IPG,LKG Input leakage current into PG pin VPG = 5.0 V VOUT Output voltage accuracy TPS6283810, PWM mode RFB Internal resistor divider connected to FB pin IDIS Output discharge current 0.4 V 0.01 0.1 µA 1.0 1.010 V OUTPUT 0.990 7.5 MΩ 400 mA High-side FET on-resistance 26 mΩ Low-side FET on-resistance 26 mΩ VSW = 0.4V; EN = LOW 75 POWER SWITCH RDS(on) ILIM High-side FET switch current limit fSW PWM switching frequency 3.6 IOUT = 1 A, VOUT = 1.0 V 4.3 5.0 3.5 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 A MHz 5 TPS6283810 SLVSEX7 – DECEMBER 2018 www.ti.com 70.0 70.0 60.0 60.0 50.0 50.0 RDS(on) (mOhm) RDS(on) (mOhm) 6.6 Typical Characteristics 40.0 30.0 20.0 10.0 0.0 2.5 40.0 30.0 20.0 TJ = 0 °C TJ = 25 °C TJ = 85 °C TJ = 125 °C 3.0 10.0 3.5 4.0 4.5 Input Voltage (V) 5.0 TJ = 0 °C TJ = 25 °C TJ = 85 °C TJ = 125 °C 0.0 2.5 5.5 3.0 $ 6KXWGRZQ &XUUHQW 4XLHVFHQW &XUUHQW $ 0.4 5.5 D011 4.0 TJ = -40 °C TJ = 25 °C TJ = 85 °C TJ = 125 °C 3.0 TJ = -40 °C TJ = 25 °C TJ = 85 °C TJ = 125 °C 0.3 0.2 0.1 3.5 4.0 4.5 Input Voltage (V) 5.0 5.5 0.0 2.5 D001 Figure 3. Quiescent Current 6 5.0 0.5 6.0 0.0 2.5 4.0 4.5 Input Voltage (V) Figure 2. Low-Side FET On-Resistance Figure 1. High-Side FET On-Resistance 8.0 2.0 3.5 D010 3.0 3.5 4.0 4.5 Input Voltage (V) 5.0 5.5 D000 Figure 4. Shutdown Current Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 TPS6283810 www.ti.com SLVSEX7 – DECEMBER 2018 7 Detailed Description 7.1 Overview The synchronous step-down converter adopts a DCS-Control (Direct Control with Seamless transition into Power Save Mode) topology. This is an advanced regulation topology that combines the advantages of hysteretic, voltage, and current mode control schemes. The DCS-Control topology operates in PWM (pulse width modulation) mode for medium to heavy load conditions and in Power Save Mode at light load currents. In PWM mode, the converter operates with its nominal switching frequency of 3.5 MHz, having a controlled frequency variation over the input voltage range. As the load current decreases, the converter enters Power Save Mode, reducing the switching frequency and minimizing the IC current consumption to achieve high efficiency over the entire load current range. Because DCS-Control supports both operation modes (PWM and PFM) within a single building block, the transition from PWM mode to Power Save Mode is seamless and without effects on the output voltage. The devices offer both excellent DC voltage and superior load transient regulation, combined with very low output voltage ripple, minimizing interference with RF circuits. 7.2 Functional Block Diagram PG VPG_H Control Logic VREF UVLO Thermal Shutdown Startup EN VIN + ± VFB VPG_L + ± GND Peak Current Detect VSW TON VIN VSW HICCUP Direct Control & Compensation VREF Modulator Comparator FB Zero Current Detect Discharge + _EA SW Gate Drive GND Fixed VOUT GND 7.3 Feature Description 7.3.1 Power Save Mode As the load current decreases, the device enters Power Save Mode (PSM) operation. The power save mode occurs when the inductor current becomes discontinuous. PSM is based on a fixed on-time architecture and the switching frequency in PSM is reduced, as related in Equation 1. Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 7 TPS6283810 SLVSEX7 – DECEMBER 2018 www.ti.com Feature Description (continued) t ON 250ns u VOUT VIN 2 u IOUT V VOUT V 2 u IN u IN t ON VOUT L fPSM (1) In Power Save Mode, the output voltage rises slightly above the nominal output voltage. This effect is minimized by increasing the output capacitor or inductor value. When the device operates close to 100% duty cycle mode, the device can't enter Power Save Mode regardless of the load current if the input voltage decreases to typically 10% above the output voltage. The device maintains output regulation in PWM mode. 7.3.2 100% Duty Cycle Low Dropout Operation The devices offer low input-to-output voltage difference by entering 100% duty cycle mode. In this mode, the high-side MOSFET switch is constantly turned on and the low-side MOSFET is switched off. This is particularly useful in battery powered applications to achieve the longest operation time by taking full advantage of the whole battery voltage range. The minimum input voltage to maintain output regulation, depending on the load current and output voltage can be calculated as: VIN,MIN = VOUT + IOUT,MAX ´ (RDS(on) + RL ) where • • • • VIN,MIN = Minimum input voltage to maintain an output voltage IOUT,MAX = Maximum output current RDS(on) = High-side FET ON-resistance RL = Inductor ohmic resistance (DCR) (2) 7.3.3 Soft Start After enabling the device, there is a 250-µs delay before switching starts. Then, an internal soft startup circuitry ramps up the output voltage which reaches nominal output voltage during the startup time of 1 ms. This avoids excessive inrush current and creates a smooth output voltage rise slope. It also prevents excessive voltage drops of primary cells and rechargeable batteries with high internal impedance. The device is able to start into a pre-biased output capacitor. It starts with the applied bias voltage and ramps the output voltage to its nominal value. 7.3.4 Switch Current Limit and HICCUP Short-Circuit Protection The switch current limit prevents the device from high inductor current and from drawing excessive current from the battery or input voltage rail. Excessive current might occur with a shorted or saturated inductor or a heavy load or shorted output circuit condition. If the inductor current reaches the threshold ILIM, the high-side MOSFET is turned off and the low-side MOSFET remains off, while the inductor current flows through its body diode and quickly ramps down. When this switch current limits is triggered 32 times, the device stops switching. The device then automatically starts a new start-up after a typical delay time of 128 µs has passed. This is named HICCUP short-circuit protection. The device repeats this mode until the high load condition disappears. 7.3.5 Undervoltage Lockout To avoid mis-operation of the device at low input voltages, under voltage lockout is implemented that shuts down the device at voltages lower than VUVLO. 8 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 TPS6283810 www.ti.com SLVSEX7 – DECEMBER 2018 Feature Description (continued) 7.3.6 Thermal Shutdown The device goes into thermal shutdown and stops the power stage switching when the junction temperature exceeds TJSD. When the device temperature falls below the threshold by 20°C, the device returns to normal operation automatically by switching the power stage again. 7.4 Device Functional Modes 7.4.1 Enable and Disable The device is enabled by setting the EN pin to a logic High. Accordingly, shutdown mode is forced if the EN pin is pulled Low with a shutdown current of typically 50 nA. In shutdown mode, the internal power switches as well as the entire control circuitry are turned off. An internal switch smoothly discharges the output through the SW pin in shutdown mode. Do not leave the EN pin floating. The typical threshold value of the EN pin is 0.89 V for rising input signal, and 0.62 V for falling input signal. 7.4.2 Power Good The device has a power good output. The PG pin goes high impedance once the FB pin voltage is above 96% and less than 105% of the nominal voltage, and is driven low once the voltage falls below typically 92% or higher than 110% of the nominal voltage. The PG pin is an open-drain output and is specified to sink up to 1 mA. The power good output requires a pull-up resistor connecting to any voltage rail less than 5.5 V. The PG signal can be used for sequencing of multiple rails by connecting it to the EN pin of other converters. Leave the PG pin unconnected when not used. The PG rising edge has a 100-µs blanking time and the PG falling edge has a deglitch delay of 20 µs. Table 1. PG Pin Logic DEVICE CONDITIONS EN = High, VFB ≥ 96% of Nominal Value Enable LOGIC STATUS HIGH IMPEDANCE EN = High, VFB ≤ 92% of Nominal Value EN = High, VFB ≤ 105% of Nominal Value LOW √ √ √ EN = High, VFB ≥ 110% of Nominal Value √ Shutdown EN = Low √ Thermal Shutdown TJ > TJSD √ UVLO 0.7 V < VIN < VUVLO Power Supply Removal VIN < 0.7 V √ √ Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 9 TPS6283810 SLVSEX7 – DECEMBER 2018 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The following section discusses the design of the external components to complete the power supply design for several input and output voltage options by using typical applications as a reference. 8.2 Typical Application VIN 2.4 V to 5.5 V TPS6283810 R3 100 k C1 4.7 µF VIN SW EN FB VOUT 1.0 V L1 0.24 µH C2 10 µF C3 10 µF VPG PG GND Copyright Ú 2018, Texas Instruments Incorporated Figure 5. Typical Application of Fixed Output 8.2.1 Design Requirements For this design example, use the parameters listed in Table 2 as the input parameters. Table 2. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Input voltage 2.4 V to 5.5 V Output voltage 1.0 V Maximum peak output current 3A Table 3 lists the components used for the example. Table 3. List of Components of Figure 5 REFERENCE C1 C2, C3 (1) MANUFACTURER (1) DESCRIPTION 4.7 µF, Ceramic capacitor, 6.3 V, X7R, size 0603, JMK107BB7475MA Taiyo Yuden 10 µF, Ceramic capacitor, 10 V, X7R, size 0603, GRM188Z71A106MA73D Murata L1 0.24 µH, Power Inductor, size 0603, DFE160810S-R24M (DFE18SANR24MG0) Murata R3 100 kΩ, Chip resistor, 1/16 W, 1%, size 0603 Std See Third-party Products disclaimer. Table 4. List of Components of Figure 5, Smallest Solution REFERENCE C1, C2, C3 MANUFACTURER (1) DESCRIPTION 10 µF, Ceramic capacitor, 6.3 V, X5R, size 0402, GRM155R60J106ME47 Murata L1 0.24 µH, Power Inductor, size 0603, DFE160810S-R24M (DFE18SANR24MG0) Murata R3 100 kΩ, Chip resistor, 1/16 W, size 0402 (1) See Third-party Products disclaimer. 10 Submit Documentation Feedback Std Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 TPS6283810 www.ti.com SLVSEX7 – DECEMBER 2018 8.2.2 Detailed Design Procedure 8.2.2.1 Custom Design With WEBENCH® Tools Click here to create a custom design using the device with the WEBENCH® Power Designer. 1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements. 2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial. 3. Compare the generated design with other possible solutions from Texas Instruments. The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time pricing and component availability. In most cases, these actions are available: • Run electrical simulations to see important waveforms and circuit performance • Run thermal simulations to understand board thermal performance • Export customized schematic and layout into popular CAD formats • Print PDF reports for the design, and share the design with colleagues Get more information about WEBENCH tools at www.ti.com/WEBENCH. 8.2.2.2 Output Filter Design The inductor and the output capacitor together provide a low-pass filter. To simplify this process, Table 5 outlines possible inductor and capacitor value combinations for most applications. Checked cells represent combinations that are proven for stability by simulation and lab test. Further combinations should be checked for each individual application. Table 5. Matrix of Output Capacitor and Inductor Combinations NOMINAL L [µH] (1) NOMINAL COUT [µF] (2) 10 0.24 + 0.33 + 2 x 10 or 1 x 22 47 (3) + + + + 100 0.47 (1) (2) (3) Inductor tolerance and current derating is anticipated. The effective inductance can vary by 20% and –30%. Capacitance tolerance and bias voltage derating is anticipated. The effective capacitance can vary by 20% and –50%. This LC combination is the standard value and recommended for most applications. 8.2.2.3 Inductor Selection The main parameter for the inductor selection is the inductor value and then the saturation current of the inductor. To calculate the maximum inductor current under static load conditions, Equation 3 is given. DI IL,MAX = IOUT,MAX + L 2 VOUT VIN DIL = VOUT ´ L ´ fSW 1- where • • • • IOUT,MAX = Maximum output current ΔIL = Inductor current ripple fSW = Switching frequency L = Inductor value (3) It is recommended to choose a saturation current for the inductor that is approximately 20% to 30% higher than IL,MAX. In addition, DC resistance and size should also be taken into account when selecting an appropriate inductor. Table 6 lists recommended inductors. Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 11 TPS6283810 SLVSEX7 – DECEMBER 2018 www.ti.com Table 6. List of Recommended Inductors (1) Inductance [µH] Current Rating [A] Dimensions [L x W x H mm] DC Resistance [mΩ] Part Number 0.24 4.9 1.6 x 0.8 x 1.0 30 Murata, DFE160810S-R24M (DFE18SANR24MG0) 0.24 6.5 2.0 x 1.2 x 1.0 25 Murata, DFE201210U-R24M 0.24 4.9 1.6 x 0.8 x 0.8 22 Cyntec, HTEH16080H-R24MSR 0.25 9.7 4.0 x 4.0 x 1.2 7.64 Coilcraft, XFL4012-251ME 0.24 3.5 2.0 x 1.6 x 0.6 35 Wurth Electronics, 74479977124 0.24 3.5 2.0 x 1.6 x 0.6 35 Sunlord, MPM201606SR24M (1) See Third-party Products disclaimer. 8.2.2.4 Capacitor Selection The input capacitor is the low-impedance energy source for the converters which helps to provide stable operation. A low ESR multilayer ceramic capacitor is recommended for best filtering and must be placed between VIN and GND as close as possible to those pins. For most applications, 4.7 μF is sufficient, though a larger value reduces input current ripple. The architecture of the device allows the use of tiny ceramic output capacitors with low equivalent series resistance (ESR). These capacitors provide low output voltage ripple and are recommended. To keep its low resistance up to high frequencies and to get narrow capacitance variation with temperature, TI recommends using X7R or X5R dielectrics. The recommended typical output capacitor value is 2 x 10 μF or 1 x 22 µF; this capacitance can vary over a wide range as outline in the output filter selection table. 8.2.3 Application Curves VIN = 5.0 V, VOUT = 1.0 V, TA = 25 ºC, BOM = Table 3, unless otherwise noted. 1.011 100 95 1.008 90 1.005 80 Vout (V) Efficiency (%) 85 75 70 65 1.002 0.999 0.996 VIN = 2.5V VIN = 3.3V VIN = 4.2V VIN = 5.0V 60 55 50 100P 1m 0.993 10m Load (A) 100m VOUT = 1.0 V 1 3 VIN = 2.5 V VIN = 3.3 V VIN = 4.2 V VIN = 5.0 V 0.990 100P 10m Load (A) 100m 1 3 D031 VOUT = 1.0 V Figure 6. Efficiency 12 1m D003 Figure 7. Load Regulation Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 TPS6283810 www.ti.com SLVSEX7 – DECEMBER 2018 VIN = 5.0 V, VOUT = 1.0 V, TA = 25 ºC, BOM = Table 3, unless otherwise noted. Switching Frequency (MHz) 5.0 ICOIL 1A/DIV 4.0 VOUT 10mV/DIV AC 3.0 2.0 VSW 5V/DIV VIN = 2.5V VIN = 3.3V VIN = 4.2V VIN = 5.0V 1.0 0.0 0.0 0.5 1.0 1.5 Load (A) 2.0 2.5 Time - 200ns/DIV 3.0 D013 D008 IOUT = 3.0 A VOUT = 1.0 V Figure 9. PWM Operation Figure 8. Switching Frequency VEN 5V/DIV ICOIL 1A/DIV VPG 5V/DIV VOUT 10mV/DIV AC VOUT 1V/DIV VSW 5V/DIV ICOIL 0.5A/DIV 7LPH V ',9 7LPH V ',9 D014 D015 IOUT = 50 mA No Load Figure 10. PSM Operation Figure 11. Startup and Shutdown with No-Load VPG 5V/DIV VEN 5V/DIV VPG 5V/DIV ILOAD 2A/DIV VOUT 1V/DIV VOUT 50mV/DIV AC ICOIL 2A/DIV 7LPH V ',9 7LPH V ',9 D016 IOUT = 3.0 A D017 IOUT = 0.1 A to 3 A Figure 12. Startup and Shutdown with Load Figure 13. Load Transient Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 13 TPS6283810 SLVSEX7 – DECEMBER 2018 www.ti.com VIN = 5.0 V, VOUT = 1.0 V, TA = 25 ºC, BOM = Table 3, unless otherwise noted. VPG 5V/DIV ICOIL 2A/DIV VOUT 0.5V/DIV 7LPH V ',9 D018 IOUT = 3 A Figure 14. HICCUP Short Circuit Protection 14 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 TPS6283810 www.ti.com SLVSEX7 – DECEMBER 2018 9 Power Supply Recommendations The device is designed to operate from an input voltage supply range from 2.4 V to 5.5 V. Ensure that the input power supply has a sufficient current rating for the application. 10 Layout 10.1 Layout Guidelines The printed-circuit-board (PCB) layout is an important step to maintain the high performance of the device. See and Figure 15 for the recommended PCB layout. • The input/output capacitors and the inductor should be placed as close as possible to the IC. This keeps the power traces short. Routing these power traces direct and wide results in low trace resistance and low parasitic inductance. • The low side of the input and output capacitors must be connected properly to the power GND to avoid a GND potential shift. • The sense traces connected to FB is a signal trace. Special care should be taken to avoid noise being induced. Keep these traces away from SW nodes. The connection of the output voltage trace for the FB resistors should be made at the output capacitor. • Refer to and Figure 15 for an example of component placement, routing and thermal design. 10.2 Layout Example Figure 15. PCB Layout of Fixed Output Voltage Application 10.3 Thermal Considerations Implementation of integrated circuits in low-profile and fine-pitch surface-mount packages typically requires special attention to power dissipation. Many system-dependent issues such as thermal coupling, airflow, added heat sinks and convection surfaces, and the presence of other heat-generating components affect the power dissipation limits of a given component. Two basic approaches for enhancing thermal performance are: • Improving the power dissipation capability of the PCB design • Introducing airflow in the system For more details on how to use the thermal parameters, see the Thermal Characteristics Application Notes, SZZA017 and SPRA953. Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 15 TPS6283810 SLVSEX7 – DECEMBER 2018 www.ti.com 11 Device and Documentation Support 11.1 Device Support 11.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 11.2 Documentation Support 11.2.1 Development Support 11.2.1.1 Custom Design With WEBENCH® Tools Click here to create a custom design using the device with the WEBENCH® Power Designer. 1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements. 2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial. 3. Compare the generated design with other possible solutions from Texas Instruments. The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time pricing and component availability. In most cases, these actions are available: • Run electrical simulations to see important waveforms and circuit performance • Run thermal simulations to understand board thermal performance • Export customized schematic and layout into popular CAD formats • Print PDF reports for the design, and share the design with colleagues Get more information about WEBENCH tools at www.ti.com/WEBENCH. 11.2.2 Related Documentation For related documentation, see the following: • Thermal Characteristics Application Note, SZZA017 • Thermal Characteristics Application Note, SPRA953 11.3 Community Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 11.4 Trademarks DCS-Control, E2E are trademarks of Texas Instruments. WEBENCH is a registered trademark of Texas Instruments. 11.5 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 16 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 TPS6283810 www.ti.com SLVSEX7 – DECEMBER 2018 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 17 TPS6283810 SLVSEX7 – DECEMBER 2018 www.ti.com PACKAGE OUTLINE YFP0006-C01 DSBGA - 0.5 mm max height SCALE 10.000 DIE SIZE BALL GRID ARRAY B E A BALL A1 CORNER D 0.30 0.25 C 0.5 MAX SEATING PLANE 0.19 0.13 BALL TYP 0.05 C 0.4 TYP SYMM C D: Max = 1.22 mm, Min = 1.18 mm 0.8 TYP SYMM B E: Max = 0.82 mm, Min = 0.78 mm 0.4 TYP A 6X 0.015 0.25 0.21 C A B 1 2 4224455/B 02/2019 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. www.ti.com 18 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 TPS6283810 www.ti.com SLVSEX7 – DECEMBER 2018 EXAMPLE BOARD LAYOUT YFP0006-C01 DSBGA - 0.5 mm max height DIE SIZE BALL GRID ARRAY (0.4) TYP 6X ( 0.23) 2 1 A (0.4) TYP SYMM B C SYMM LAND PATTERN EXAMPLE SCALE:50X 0.05 MAX ( 0.23) METAL METAL UNDER SOLDER MASK 0.05 MIN ( 0.23) SOLDER MASK OPENING SOLDER MASK OPENING NON-SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DEFINED SOLDER MASK DETAILS NOT TO SCALE 4224455/B 02/2019 NOTES: (continued) 3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints. For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009). www.ti.com Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 19 TPS6283810 SLVSEX7 – DECEMBER 2018 www.ti.com EXAMPLE STENCIL DESIGN YFP0006-C01 DSBGA - 0.5 mm max height DIE SIZE BALL GRID ARRAY (0.4) TYP (R0.05) TYP 6X ( 0.25) 1 2 A (0.4) TYP SYMM B METAL TYP C SYMM SOLDER PASTE EXAMPLE BASED ON 0.1 mm THICK STENCIL SCALE:50X 4224455/B 02/2019 NOTES: (continued) 4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. www.ti.com 20 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Product Folder Links: TPS6283810 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS6283810YFPR ACTIVE DSBGA YFP 6 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 125 1DU TPS6283810YFPT ACTIVE DSBGA YFP 6 250 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 125 1DU (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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TPS6283810YFPT
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    • 1000+6.60000

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