TPS62A01, TPS62A01A, TPS62A02, TPS62A02A
SLUSEG9C – DECEMBER 2021 – REVISED DECEMBER 2023
TPS62A0x and TPS62A0xA, 1-A, 2-A High-Efficiency Synchronous Buck Converters in
a SOT563 and a SOT23 Package
1 Features
3 Description
•
•
•
The TPS62A0x family of devices are synchronous
step-down buck DC/DC converters optimized for high
efficiency and compact design size. The devices
integrate switches capable of delivering an output
current up to 2 A. At medium to heavy loads, the
devices operate in pulse width modulation (PWM)
mode with 2.4-MHz switching frequency. At light load,
the devices automatically enter power save mode
(PSM) to maintain high efficiency over the entire load
current range. In shutdown, the current consumption
is minimal as well. The TPS62A0xA variants of this
device family operate in forced PWM across the
whole load current range.
•
•
•
•
•
•
•
•
•
•
•
•
•
2.5-V to 5.5-V input voltage range
0.6-V to VIN adjustable output voltage range
180-mΩ and 120-mΩ low RDSON switches (1-A
DRL)
100-mΩ and 67-mΩ low RDSON switches (1-A
DDC, 2-A)
< 23-µA quiescent current
1% feedback accuracy (0°C to 125°C)
100% mode operation
2.4-MHz switching frequency
Power save mode or PWM option available
Power-good output pin
Short-circuit protection (HICCUP)
Internal soft start-up
Active output discharge
Thermal shutdown protection
Pin-to-pin compatible with the TLV62585 (DRL)
Pin-to-pin compatible with the TLV62569 (DDC)
2 Applications
•
•
•
•
•
Set top box, TV applications
IP network camera, Multi-function printer
Wireless router, solid state drive
Battery-powered applications
General purpose point-of-load supply
The TPS62A0x devices provide an adjustable output
voltage through an external resistor divider. An
internal soft-start circuit limits the inrush current during
start-up. Other features like overcurrent protection,
thermal shutdown protection, and power good are
built-in. The devices are available in a SOT563 and
SOT23-6 package.
Package Information
PACKAGE(1)
PART NUMBER
TPS62A01x
TPS62A0x
L1
1.0 µH
VIN
2.5 V to 5.5 V
VIN
SW
GND
FB
VOUT
0.6 V to VIN
R1
200 k
C1
4.7 F
EN
PG
C2
22 F
R2
100 k
VPG
(1)
(2)
1.60 mm × 1.60 mm
2.90 mm × 2.80 mm(3)
DRL (SOT-563, 6)
1.60 mm × 1.60 mm
DDC (SOT-23, 6)
2.90 mm × 2.80 mm
(3)
C3: optional
For more information, see Section 11.
The package size (length × width) is a nominal value and
includes pins, where applicable.
Preview information (not Production Data).
Device Information
Typical Application
PART
100
95
NUMBER(1)
OPERATION MODE
OUTPUT
CURRENT
TPS62A01
PSM, PWM
1A
TPS62A01A
FPWM
1A
80
TPS62A02
PSM, PWM
2A
75
TPS62A02A
FPWM
2A
90
85
Efficiency [%]
DRL (SOT-563, 6)
DDC (SOT-23, 6)(3)
C3*
VIN
R4
499 k
TPS62A02x
PACKAGE SIZE(2)
70
(1)
65
60
VOUT = 3.3 V
VOUT = 1.8 V
VOUT = 1.2 V
55
50
1m
See the Device Comparison Table.
10m
100m
IOUT [A]
1
2
Efficiency vs Output Current at 5 VIN (TPS62A02x)
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION
DATA.
TPS62A01, TPS62A01A, TPS62A02, TPS62A02A
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SLUSEG9C – DECEMBER 2021 – REVISED DECEMBER 2023
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Device Comparison Table...............................................3
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics.............................................5
6.6 Typical Characteristics................................................ 7
7 Detailed Description........................................................8
7.1 Overview..................................................................... 8
7.2 Functional Block Diagram........................................... 8
7.3 Feature Description.....................................................8
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7.4 Device Functional Modes............................................9
8 Application and Implementation.................................. 11
8.1 Application Information..............................................11
8.2 Typical Application.................................................... 11
8.3 Power Supply Recommendations.............................16
8.4 Layout....................................................................... 16
9 Device and Documentation Support............................18
9.1 Device Support......................................................... 18
9.2 Receiving Notification of Documentation Updates....18
9.3 Support Resources................................................... 18
9.4 Trademarks............................................................... 18
9.5 Electrostatic Discharge Caution................................18
9.6 Glossary....................................................................18
10 Revision History.......................................................... 19
11 Mechanical, Packaging, and Orderable
Information.................................................................... 19
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SLUSEG9C – DECEMBER 2021 – REVISED DECEMBER 2023
4 Device Comparison Table
(1)
Device Number
Output Current
Package
Operation Mode
TPS62A01DRLR
1A
SOT-563, 6
PSM, PWM
TPS62A01ADRLR
1A
SOT-563, 6
FPWM
TPS62A02DRLR
2A
SOT-563, 6
PSM, PWM
TPS62A02ADRLR
2A
SOT-563, 6
FPWM
TPS62A01PDDCR(1)
1A
SOT-23, 6
PSM, PWM
TPS62A01APDDCR(1)
1A
SOT-23, 6
FPWM
TPS62A02PDDCR
2A
SOT-23, 6
PSM, PWM
TPS62A02APDDCR
2A
SOT-23, 6
FPWM
Preview information (not Production Data).
5 Pin Configuration and Functions
SOT23-6
DDC package
(Top View)
SOT563-6
DRL package
(Top View)
GND
1
6
PG
SW
2
5
FB
VIN
3
4
EN
Not to scale
EN
1
6
FB
GND
2
5
PG
SW
3
4
VIN
Not to scale
Figure 5-1. 6-Pin DRL SOT-563 Package (Top View), 6-Pin DDC SOT-23 package (Top View)
Table 5-1. Pin Functions
Pin Number
Name
SOT563-6
EN
4
FB
5
GND
1
PG
6
SW
2
VIN
3
(1)
SOT23-6
Type(1)
1
Description
I
Device enable logic input. Logic high enables the device. Logic low disables the device
and turns the device into shutdown. Do not leave the pin floating.
I
Feedback pin for the internal control loop. Connect this pin to an external feedback
divider.
2
G
Ground pin.
5
O
Power-good open-drain output pin. The pullup resistor cannot be connected to any
voltage higher than 5.5 V. If unused, leave the pin open or connect to GND.
O
Switch pin connected to the internal FET switches and inductor terminal. Connect the
inductor of the output filter to this pin.
I
Input voltage pin. Connect the input capacitor as close as possible between VIN and
GND.
6
3
4
I = Input, O = Output, G = Ground
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
VIN, EN, PG
–0.3
6
V
SW, DC
–0.3
VIN + 0.3
V
SW, transient < 10 ns
–3.0
10
V
FB
–0.3
3
V
TJ
Operating junction temperature
–40
150
°C
Tstg
Storage temperature
–55
150
°C
Pin voltage(2)
(1)
(2)
UNIT
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
All voltage values are with respect to the network ground terminal.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
Over operating junction temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input supply voltage range
2.5
5.5
V
VOUT
Output voltage range
0.6
VIN
V
IOUT
Output current range
TPS62A01
0
1
A
IOUT
Output current range (1)
TPS62A02
0
2
A
L
Effective inductance
1.0
µH
COUT
Output capacitance
VOUT < 1.2 V
44
µF
COUT
Output capacitance
1.2 V ≤ VOUT < 1.8 V
22
µF
COUT
Output capacitance
VOUT ≥ 1.8 V
10
IPG
Power Good input current capability
TJ
Operating junction temperature
(1)
µF
0
1
mA
–40
125
°C
Operating continuously at 2 A with input voltages < 3.3 V or at ambient temperatures > 85°C can result in thermal shutdown, per EVM
measurements.
6.4 Thermal Information
TPS62A0x
THERMAL
4
METRIC(1)
TPS62A0x
DRL
DDC
6 PINS
6 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
157.3
132.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
92.2
74.9
°C/W
RθJB
Junction-to-board thermal resistance
45.6
45.5
°C/W
ψJT
Junction-to-top characterization parameter
4.0
25.5
°C/W
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SLUSEG9C – DECEMBER 2021 – REVISED DECEMBER 2023
TPS62A0x
TPS62A0x
DRL
DDC
6 PINS
6 PINS
45.0
45.1
THERMAL METRIC(1)
ψJB
(1)
Junction-to-board characterization parameter
UNIT
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
TJ = –40°C to +125°C, VIN = 2.5 V to 5.5 V. Typical values are at TJ = 25°C and VIN = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
IQ(VIN)
VIN quiescent current
Non-switching; VEN = High; VFB = 610
mV; TPS62A01xDRL
20
µA
IQ(VIN)
VIN quiescent current
Non-switching; VEN = High; VFB = 610
mV; TPS62A02xDRL; TPS62A01xDDC;
TPS62A02xDDC
23
µA
ISD(VIN)
VIN shutdown supply current
VEN = Low
VUVLO(R)
VIN UVLO rising threshold
VIN rising
VUVLO(F)
VIN UVLO falling threshold
VIN falling
VEN(R)
EN voltage rising threshold
EN rising; enable switching
1.2
VEN(F)
EN voltage falling threshold
EN falling, disable switching
0.4
V
VEN(LKG)
EN Input leakage current
VEN = 5 V
100
nA
0.01
2
µA
2.3
2.4
2.5
V
2.2
2.3
2.4
V
UVLO
ENABLE
V
REFERENCE VOLTAGE
VFB
FB voltage
TJ = 0°C to 125°C, PWM mode
594
600
606
mV
VFB
FB voltage
PWM mode
591
600
609
mV
IFB(LKG)
FB input leakage current
VFB = 0.6 V
100
nA
SWITCHING FREQUENCY
fSW(FCCM)
Switching frequency, FPWM operation
VIN = 5 V; VOUT = 1.8 V
2400
kHz
Internal fixed soft-start time
From EN = High to VFB = 0.56 V
RDSON(HS)
High-side MOSFET on-resistance
TPS62A01xDRL; VIN = 5 V
180
mΩ
RDSON(LS)
Low-side MOSFET on-resistance
TPS62A01xDRL; VIN = 5 V
120
mΩ
RDSON(HS)
High-side MOSFET on-resistance
VIN = 5 V; TPS62A02xDRL;
TPS62A01xDDC; TPS62A02xDDC
100
mΩ
RDSON(LS)
Low-side MOSFET on-resistance
VIN = 5 V; TPS62A02xDRL;
TPS62A01xDDC; TPS62A02xDDC
67
mΩ
1.8
A
1.8
A
3.4
A
STARTUP
1
ms
POWER STAGE
OVERCURRENT PROTECTION
IHS(OC)
High-side peak current limit
TPS62A01
ILS(OC)
Low-side valley current limit
TPS62A01
1.3
IHS(OC)
High-side peak current limit
TPS62A02
ILS(OC)
Low-side valley current limit
TPS62A02xDRL
4.2
A
ILS(OC)
Low-side valley current limit
TPS62A02xDDC
3.15
A
VPGTH
Power Good threshold
PG low, FB falling
93.5
%
VPGTH
Power Good threshold
PG high, FB rising
96
%
PG delay falling
35
µs
PG delay rising
10
µs
2.7
POWER GOOD
IPG(LKG)
PG pin Leakage current when open drain
output is high
VPG = 5 V
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6.5 Electrical Characteristics (continued)
TJ = –40°C to +125°C, VIN = 2.5 V to 5.5 V. Typical values are at TJ = 25°C and VIN = 5 V (unless otherwise noted)
PARAMETER
PG pin output low-level voltage
TEST CONDITIONS
MIN
TYP
IPG = 1 mA
MAX
UNIT
400
mV
OUTPUT DISCHARGE
Output discharge current on SW pin
VIN = 3 V, VOUT = 2.0 V; TPS62A01xDRL
60
mA
Output discharge current on SW pin
VIN = 3 V, VOUT = 2.0 V; TPS62A01xDDC;
TPS62A02xDDC;
76
mA
170
°C
20
°C
THERMAL SHUTDOWN
6
TJ(SD)
Thermal shutdown threshold
TJ(HYS)
Thermal shutdown hysteresis
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Temperature rising
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28
28
26
26
24
24
22
20
18
16
TJ
TJ
TJ
TJ
14
12
2.5
3
3.5
4
4.5
Input Voltage [V]
=
=
=
=
−40°C
30°C
85°C
125°C
5
5.5
Figure 6-1. Quiescent Current vs Input Voltage
(TPS62A01)
Quiescent Current [µA]
Quiescent Current [µA]
6.6 Typical Characteristics
22
20
18
16
TJ
TJ
TJ
TJ
14
12
2.5
3
3.5
4
4.5
Input Voltage [V]
=
=
=
=
−40C
30C
85C
125C
5
5.5
Figure 6-2. Quiescent Current vs Input Voltage
(TPS62A02)
0.25
0.225
Shutdown Current [µA]
0.2
VIN = 2.5 V
VIN = 3.6 V
VIN = 5.5 V
0.175
0.15
0.125
0.1
0.075
0.05
0.025
0
−40
−20
0
20
40
60
80
Junction Temperature [°C]
100
125
Figure 6-3. Shutdown Current vs Junction Temperature
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7 Detailed Description
7.1 Overview
The TPS62A0x is a high-efficiency synchronous step-down converter. The device operates with an adaptive
off time with a peak current control scheme. The device operates typically at 2.4-MHz frequency pulse width
modulation (PWM) at moderate to heavy load currents. Based on the VIN/VOUT ratio, a simple circuit sets the
required off time for the low-side MOSFET, making the switching frequency relatively constant regardless of the
variation of the input voltage, output voltage, and load current.
7.2 Functional Block Diagram
VIN
VI
Device Control
and Logic
EN
HS Limit
Peak Current Detect
UVLO
Soft Start
HICCUP protection
Thermal Shutdown
Modulator and
Power Control
SW
Power Save Mode
& PWM
Operation
VFB
VFB
Gate
Driver
100% Mode
–
+
VREF
LS Limit
Zero Current Detect
Active
Discharge
EN
PG
VI
TOFF timer
+
VPG
–
VFB
VO
GND
7.3 Feature Description
7.3.1 Power Save Mode
The device automatically enters power save mode to improve efficiency at light load when the inductor current
becomes discontinuous. In power save mode, the converter reduces the switching frequency and minimizes
current consumption. In power save mode, the output voltage rises slightly above the nominal output voltage.
This effect is minimized by increasing the output capacitor or adding a feedforward capacitor.
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7.3.2 100% Duty Cycle Low Dropout Operation
The device offers low input-to-output voltage difference by entering 100% duty cycle mode. In this mode, the
high-side MOSFET switch is constantly turned on and the low-side MOSFET is switched off. The minimum input
voltage to maintain output regulation, depending on the load current and output voltage, is calculated as:
VIN(MIN) = VOUT + IOUT × (RDS(ON) + RL)
(1)
where
•
•
RDS(ON) = High-side FET on-resistance
RL = Inductor ohmic resistance (DCR)
7.3.3 Soft Start
After enabling the device, internal soft-start circuitry ramps up the output voltage, which reaches the nominal
output voltage during start-up time, avoiding excessive inrush current and creating a smooth voltage rise slope.
Internal soft-start circuitry also prevents excessive voltage drops of primary cells and rechargeable batteries with
high internal impedance.
The TPS62A0x is able to start into a prebiased output capacitor. The converter starts with the applied bias
voltage and ramps the output voltage to the nominal value.
7.3.4 Switch Current Limit and Short-Circuit Protection (HICCUP)
The switch current limit prevents the device from high inductor current and drawing excessive current from the
battery or input rail. Due to internal propagation delay, the AC peak current can exceed the static current limit
during that time. Excessive current can occur with a shorted or saturated inductor, an overload or shorted output
circuit condition. If the inductor current reaches the threshold ILIM, the high-side MOSFET is turned off and the
low-side MOSFET is turned on to ramp down the inductor current with an adaptive off time.
When this switch current limit is triggered 32 times, the device stops switching to protect the output. The
device then automatically starts a new start-up after a typical delay time of 100 µs has passed. This is named
HICCUP short-circuit protection. The device repeats this mode until the high load condition disappears. HICCUP
protection is also enabled during the start-up.
7.3.5 Undervoltage Lockout
To avoid misoperation of the device at low input voltages, an undervoltage lockout (UVLO) is implemented,
which shuts down the device at voltages lower than VUVLO.
7.3.6 Thermal Shutdown
The device goes into thermal shutdown and stops switching when the junction temperature exceeds TJSD. When
the device temperature falls below the threshold by 20°C, the device returns to normal operation automatically.
7.4 Device Functional Modes
7.4.1 Enable and Disable
The device is enabled by setting the EN input to a logic High. Accordingly, a logic Low disables the device. If
the device is enabled, the internal power stage starts switching and regulates the output voltage to the set point
voltage. The EN input must be terminated and not be left floating.
7.4.2 Power Good
The TPS62A0x has a built-in power-good (PG) feature to indicate whether the output voltage has reached the
target and the device is ready. The PG signal can be used for start-up sequencing of multiple rails. The PG pin
is an open-drain output that requires a pullup resistor to any voltage up to the recommended input voltage level.
PG is low when the device is turned off due to EN, UVLO (undervoltage lockout), or thermal shutdown. VIN must
remain present for the PG pin to stay low. If not used, the power-good can be tie to GND or left open. The PG
indicator has a de-glitch to avoid the signal indicating glitches or transient responses from the loop.
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Table 7-1. Power-Good indicator Functional Table
Logic Signals
VI
EN Pin
HIGH
VI > UVLO
NO
VO
PG Status
VO on target
High Impedance
VO < target
LOW
YES
LOW
LOW
YES
x
UVLO < VI < 1.8 V
x
x
LOW
x
x
x
Undefined
VI < 1.8 V
10
Thermal Shutdown
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
The following section discusses the design of the external components to complete the power supply design for
several input and output voltage options by using typical applications as a reference.
8.2 Typical Application
TPS62A01
L1
1.0 µH
VIN
2.5 V to 5.5 V
VIN
VOUT
1.8 V / 1 A
SW
R1
200 k
GND
C1
4.7 F
C3*
FB
C2
22 F
VIN
R4
499 k
EN
PG
R2
100 k
VPG
Figure 8-1. TPS62A01 Typical Application Circuit
TPS62A02
L1
1.0 µH
VIN
2.5 V to 5.5 V
VIN
VOUT
1.8 V / 2 A
SW
R1
200 k
GND
C1
4.7 F
C3*
FB
C2
22 F
VIN
R4
499 k
EN
PG
R2
100 k
VPG
Figure 8-2. TPS62A02 Typical Application Circuit
*C3 is optional
8.2.1 Design Requirements
For this design example, use the parameters listed in Table 8-1 as the input parameters
Table 8-1. Design Parameters
Design Parameter
Example Value
Input voltage
2.5 V to 5.5 V
Output voltage
1.8 V
Maximum output current
1.0 A, 2.0 A
Table 8-2 lists the components used for the example.
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Table 8-2. List of Components
(1)
Manufacturer
(1)
Reference
Description
C1
4.7 µF, Ceramic Capacitor, 10 V, X7R, size
0805, GRM21BR71A475KA73L
Murata
C2
22 µF, Ceramic Capacitor, 10 V, X7R, size
0805, GRM21BZ71A226KE15L
Murata
L1
1 µH, Power Inductor, DFE252012F-1R0M
(1-A) / XGL3520-102MEC (2-A)
Murata / Coilcraft
R1, R2
Chip resistor, 1%, size 0603
Std.
C3
Optional, 120 pF if needed
Std.
See the Third-Party Products Disclaimer.
8.2.2 Detailed Design Procedure
8.2.2.1 Setting the Output Voltage
The output voltage is set by an external resistor divider according to Equation 2.
R1 = R2 ×
VOUT
VOUT
VFB − 1 = R2 × 0.6 V − 1
(2)
R2 must not be higher than 100 kΩ to provide acceptable noise sensitivity.
8.2.2.2 Output Filter Design
The inductor and output capacitor together provide a low-pass filter. To simplify this process, Table 8-3 outlines
possible inductor and capacitor value combinations. Checked cells represent combinations that are proven for
stability by simulation and lab test. Check further combinations for each individual application.
Table 8-3. Matrix of Output Capacitor and Inductor Combinations for TPS62A01 and TPS62A02
VOUT [V]
L [µH](1)
0.6 ≤ VOUT < 1.2
1
1.2 ≤ VOUT < 1.8
1
1.8 ≤ VOUT
(1)
(2)
(3)
(4)
1
COUT [µF](2)
10
+(4)
22
2 × 22
+
++(3)
++(3)
+
++(3)
+
Inductor tolerance and current de-rating is anticipated. The effective inductance can vary by +20% and –30%.
Capacitance tolerance and bias voltage de-rating is anticipated. The effective capacitance can vary by +20% and –50%.
This LC combination is the standard value and recommended for most applications.
The minimum COUT of 10 µF does not support an additional feedforward capacitor.
A 0.47-uH inductor can also be used with the same recommended output capacitors for the TPS62A02x. In case
a lower output ripple is desired, higher output capacitance can help reduce the ripple.
8.2.2.3 Input and Output Capacitor Selection
The architecture of the TPS62A0x allows use of tiny ceramic-type output capacitors with low equivalent series
resistance (ESR). These capacitors provide low output voltage ripple and are thus recommended. To keep
resistance up to high frequencies and to achieve narrow capacitance variation with temperature, TI recommends
to use X7R or X5R dielectric.
The input capacitor is the low impedance energy source for the converter that helps provide stable operation.
TI recommends a low-ESR multilayer ceramic capacitor for best filtering. For most applications, a 4.7-μF input
capacitor is sufficient; a larger value reduces input voltage ripple.
The TPS62A0x is designed to operate with an output capacitor of 10 μF to 47 μF, depending on the selected
output voltage, as outlined in Table 8-3.
A feedforward capacitor reduces the output ripple in PSM and improves the load transient response. A 120-pF
capacitor is good for the 1.8-V output typical application.
12
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100
100
95
95
90
90
85
85
Efficiency [%]
Efficiency [%]
8.2.3 Application Curves
80
75
70
65
80
75
70
65
60
50
1m
60
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
55
10m
100m
Output Current [A]
TPS62A01 (PSM/PWM)
500m
50
1m
1
SOT-563 (DRL)
500m
1
SOT-563 (DRL)
Figure 8-4. 1.2-V Output Efficiency
100
100
95
95
90
90
85
Efficiency [%]
85
Efficiency [%]
10m
100m
Output Current [A]
TPS62A01 (PSM/PWM)
Figure 8-3. 0.6-V Output Efficiency
80
75
70
65
80
75
70
65
60
55
60
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
55
50
1m
10m
100m
Output Current [A]
TPS62A01 (PSM/PWM)
500m
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
50
45
40
1
0
SOT-563 (DRL)
0.1
0.2
0.3
0.4 0.5 0.6 0.7
Output Current [A]
TPS62A01A (FPWM)
Figure 8-5. 1.8-V Output Efficiency
0.8
0.9
1
SOT-563 (DRL)
Figure 8-6. 1.8-V Output Efficiency
100
100
95
95
90
90
85
85
Efficiency [%]
Efficiency [%]
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
55
80
75
70
80
75
70
65
65
60
50
1m
60
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
55
10m
100m
Output Current [A]
TPS62A02 (PSM/PWM)
500m
1
SOT-563 (DRL)
Figure 8-7. 0.6-V Output Efficiency
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
55
2
50
1m
10m
100m
Output Current [A]
TPS62A02 (PSM/PWM)
500m
1
2
SOT-563 (DRL)
Figure 8-8. 1.2-V Output Efficiency
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SLUSEG9C – DECEMBER 2021 – REVISED DECEMBER 2023
100
100
95
95
90
90
85
Efficiency [%]
Efficiency [%]
85
80
75
70
65
80
75
70
65
60
55
60
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
55
50
1m
10m
100m
Output Current [A]
TPS62A02 (PSM/PWM)
500m 1
45
40
2
0
SOT-563 (DRL)
100
100
95
95
90
90
85
85
80
80
Efficiency [%]
Efficiency [%]
0.4
0.6
0.8
1
1.2 1.4
Output Current [A]
1.6
1.8
2
SOT-563 (DRL)
Figure 8-10. 1.8-V Output Efficiency
75
70
65
60
55
75
70
65
60
55
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
50
45
40
1m
10m
100m
Output Current [A]
TPS62A01 (PSM/PWM)
500m
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
50
45
40
1m
1
SOT-23 (DDC)
10m
100m
Output Current [A]
TPS62A01 (PSM/PWM)
Figure 8-11. 0.6-V Output Efficiency
500m
1
SOT-23 (DDC)
Figure 8-12. 1.2-V Output Efficiency
100
100
95
95
90
90
85
85
80
80
Efficiency [%]
Efficiency [%]
0.2
TPS62A02A (FPWM)
Figure 8-9. 1.8-V Output Efficiency
75
70
65
60
55
75
70
65
60
55
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
50
45
40
1m
10m
100m
Output Current [A]
TPS62A01 (PSM/PWM)
500m
SOT-23 (DDC)
Figure 8-13. 1.8-V Output Efficiency
14
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
50
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VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
50
45
2
40
0
0.1
0.2
0.3
0.4 0.5 0.6 0.7
Output Current [A]
TPS62A01A (FPWM)
0.8
0.9
1
SOT-23 (DDC)
Figure 8-14. 1.8-V Output Efficiency
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Product Folder Links: TPS62A01 TPS62A01A TPS62A02 TPS62A02A
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SLUSEG9C – DECEMBER 2021 – REVISED DECEMBER 2023
100
100
95
95
90
90
85
85
80
80
Efficiency [%]
Efficiency [%]
www.ti.com
75
70
65
60
55
75
70
65
60
55
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
50
45
40
1m
10m
100m
Output Current [A]
TPS62A02 (PSM/PWM)
500m
1
45
40
1m
2
SOT-23 (DDC)
10m
100m
Output Current [A]
TPS62A02 (PSM/PWM)
Figure 8-15. 0.6-V Output Efficiency
500m
1
2
SOT-23 (DDC)
Figure 8-16. 1.2-V Output Efficiency
100
100
95
95
90
90
85
85
80
80
Efficiency [%]
Efficiency [%]
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
50
75
70
65
60
75
70
65
60
55
55
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
50
45
40
1m
10m
100m
Output Current [A]
TPS62A02 (PSM/PWM)
500m
SOT-23 (DDC)
Figure 8-17. 1.8-V Output Efficiency
1
VIN = 2.5 V
VIN = 3.3 V
VIN = 5.0 V
50
45
40
2
0
0.5
1
Output Current [A]
TPS62A02A (FPWM)
1.5
2
SOT-23 (DDC)
Figure 8-18. 1.8-V Output Efficiency
CH1: 1.8V DC-offset
CH1: 1.8V DC-offset
IOUT = 500 mA
Figure 8-19. PWM Operation
IOUT = 100 mA
Figure 8-20. Power Save Mode Operation
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CH1: 1.8V DC-offset
IOUT = 1 A
Figure 8-21. Start-Up with Load
Load step: 0.3 A to 1 A
Figure 8-22. Load Transient
8.3 Power Supply Recommendations
The device is designed to operate from an input voltage supply range from 2.5 V to 5.5 V. Make sure that the
input power supply has a sufficient current rating for the application.
8.4 Layout
8.4.1 Layout Guidelines
The printed-circuit-board (PCB) layout is an important step to maintain the high performance of the TPS62A01x
and TPS62A02x devices.
• Place the input and output capacitors and the inductor as close as possible to the IC. This action keeps
the power traces short. Routing these power traces direct and wide results in low trace resistance and low
parasitic inductance.
• Connect the low side of the input and output capacitors properly to the GND pin to avoid a ground potential
shift.
• The sense traces connected to FB is a signal trace. Take special care to avoid noise being induced. Keep
these traces away from SW nodes.
• Use a common ground. GND layers can be used for shielding.
See Figure 8-23 and Figure 8-24 for the recommended PCB layout.
8.4.2 Layout Example
Figure 8-23. TPS62A0x (SOT563) PCB Layout Recommendation
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SLUSEG9C – DECEMBER 2021 – REVISED DECEMBER 2023
GND
L1
C1
VIN
VIN
SW
PG
GND
FB
1 EN
VOUT
C2
R2
R1
C3
GND
Figure 8-24. TPS62A0x (SOT23-6) PCB Layout Recommendation
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SLUSEG9C – DECEMBER 2021 – REVISED DECEMBER 2023
9 Device and Documentation Support
9.1 Device Support
9.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
9.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Notifications to register and receive a weekly digest of any product information that has changed. For change
details, review the revision history included in any revised document.
9.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
9.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
9.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
9.6 Glossary
TI Glossary
18
This glossary lists and explains terms, acronyms, and definitions.
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SLUSEG9C – DECEMBER 2021 – REVISED DECEMBER 2023
10 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (July 2022) to Revision C (December 2023)
Page
• Added DDC package option throughout the data sheet..................................................................................... 3
• Changed ESD Ratings CDM row from showing testing was per JESD22-C101 to show that testing was per
JS-002................................................................................................................................................................ 4
• Changed block diagram PG circuit by swapping VPG and VFB ..........................................................................8
• Changed block diagram high-side MOSFET from PMOS to NMOS.................................................................. 8
Changes from Revision A (March 2022) to Revision B (July 2022)
Page
• Added TPS62A02 and TPS62A02A................................................................................................................... 3
Changes from Revision * (December 2021) to Revision A (March 2022)
Page
• Changed document status from Advance Information to Production Data.........................................................1
11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2023 Texas Instruments Incorporated
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PACKAGE OPTION ADDENDUM
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16-Dec-2023
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS62A01ADRLR
ACTIVE
SOT-5X3
DRL
6
4000
RoHS & Green
Call TI | SN
Level-1-260C-UNLIM
-40 to 125
1J8
Samples
TPS62A01DRLR
ACTIVE
SOT-5X3
DRL
6
4000
RoHS & Green
Call TI | SN
Level-1-260C-UNLIM
-40 to 125
1J7
Samples
TPS62A02ADRLR
ACTIVE
SOT-5X3
DRL
6
4000
RoHS & Green
Call TI | SN
Level-1-260C-UNLIM
-40 to 125
1JM
Samples
TPS62A02DRLR
ACTIVE
SOT-5X3
DRL
6
4000
RoHS & Green
Call TI | SN
Level-1-260C-UNLIM
-40 to 125
1JL
Samples
TPS62A02PDDCR
ACTIVE
SOT-23-THIN
DDC
6
3000
RoHS & Green
Call TI | SN
Level-1-260C-UNLIM
-40 to 125
A02P
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of