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TPS65217
SLVSB64I – NOVEMBER 2011 – REVISED MARCH 2018
TPS65217x Single-Chip PMIC for Battery-Powered Systems
1 Features
2 Applications
•
•
•
•
•
1
•
•
•
•
•
•
Charger and Power Path
– 2-A Output Current on Power Path
– Linear Charger; 700-mA Maximum Charge
Current
– 20-V Tolerant USB and AC Inputs
– Thermal Regulation, Safety Timers
– Temperature Sense Input
Step-Down Converter (DCDC1, DCDC2,
DCDC3)
– Three Step-Down Converter With Integrated
Switching FETs
– 2.25-MHz Fixed Frequency Operation
– Power-Save Mode at Light-Load Current
– Output Voltage Accuracy in PWM Mode ±2%
– 100% Duty Cycle for Lowest Dropout
– Typical 15-µA Quiescent per Converter
– Passive Discharge to Ground When Disabled
LDO Regulators (LDO1, LDO2)
– Two Adjustable LDOs
– LDO2 can be Configured to Track DCDC3
– Typical 15-µA Quiescent Current
Load Switches (LDO3, LDO4)
– Two Independent Load Switches That Can Be
Configured as LDOs
WLED Driver
– Internally Generated PWM for Dimming
Control
– 38-V Open-LED Protection
– Supports Two Strings of up to 10 LEDs at
25 mA Each
– Internal Low-Side Current Sinks
Protection
– Undervoltage Lockout and Battery Fault
Comparator
– Always-On Push-Button Monitor
– Hardware Reset Pin
– Password Protected I2C Registers
Interface
– I2C Interface (Address 0x24)
– Password-Protected I2C Registers
Sitara™ AM335x Processor Power
Portable Navigation Systems
Tablet Computing
5-V Industrial Equipment
3 Description
The TPS65217x is a single-chip power management
IC (PMIC) specifically designed to power the AM335x
ARM® Cortex®-A8 processor in portable and 5-V linepowered applications. The PMIC device provides a
linear battery charger for single-cell Li-ion and Lipolymer batteries, dual-input power path, three stepdown converters, four low-dropout (LDO) regulators,
and a high-efficiency boost converter to power two
strings of up to 10 LEDs each. The system can be
supplied by any combination of USB port, 5-V AC
adaptor, or Li-Ion battery. The device is characterized
across a –40°C to +105°C temperature range which
makes it suitable for industrial applications. Three
high-efficiency 2.25-MHz step-down converters can
providing the core voltage, memory, and I/O voltage
for a system. The TPS65217x device comes in a 48pin leadless package (6-mm × 6-mm VQFN) with a
0.4-mm pitch.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TPS65217A
TPS65217B
VQFN (48)
TPS65217C
6.00 mm × 6.00 mm
TPS65217D
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Application Diagram
AC adapter
DC 5-V out
TPS65217C,
TPS65217D
PMIC
VAC
AC
VSYS
VDDQ/2
Sitara AM335xZCZ
Processor
VTT, VREFCA
SYS
VDD, VDDQ
VUSB
USB
USB direct
connection
DDR3 or DDR3L
Memory
BAT
BAT_SENSE
1.5 V or
1.35 V
DCDC1
VDDS_DDR
1.1 V
DCDC2
GND
1.2 A
DCDC3
PB_IN
LDO1
LDO2
LS1/LDO3
LS2/LDO4
SCL
SDA
PWR_EN
nWAKEUP
1.2 A
1.2 A
100 mA
100 mA
400 mA
400 mA
VDD_MPU
1.1 V
VDD_CORE
1.8 V
3.3 V
1.8 V
VDDS, VDDS_RTC
VDDA_ADC, VDDS_OSC,
VDDS_PLL, VDDS_SRAM,
VDDSHVx(1.8),
VDDA1P8V_USB0
3.3 V
VDDSHVx(3.3),
VDDA3P3V_USB0
I2C0_SCL
I2C0_SDA
PMIC_PWR_EN
EXT_WAKEUP
Copyright © 2018, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS65217
SLVSB64I – NOVEMBER 2011 – REVISED MARCH 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
8
1
1
1
2
4
5
7
Absolute Maximum Ratings ...................................... 7
ESD Ratings.............................................................. 7
Recommended Operating Conditions....................... 7
Thermal Information .................................................. 8
Electrical Characteristics........................................... 8
I2C Timing Requirements........................................ 15
Typical Characteristics ............................................ 16
Detailed Description ............................................ 17
8.1
8.2
8.3
8.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
17
18
19
39
8.5 Programming........................................................... 41
8.6 Register Maps ......................................................... 44
9
Application and Implementation ........................ 73
9.1 Application Information............................................ 73
9.2 Typical Application .................................................. 74
10 Power Supply Recommendations ..................... 81
11 Layout................................................................... 82
11.1 Layout Guidelines ................................................. 82
11.2 Layout Example .................................................... 82
12 Device and Documentation Support ................. 83
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Device Support......................................................
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
83
83
83
83
83
83
83
13 Mechanical, Packaging, and Orderable
Information ........................................................... 84
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision H (June 2017) to Revision I
Page
•
Changed the diagram in the Description section.................................................................................................................... 1
•
Changed the lists in the Power-Up Sequencing section to logical sentences for simplicity ............................................... 20
•
Added a description of the always-on power supply in the Push-Button Monitor (PB_IN) section...................................... 23
•
Changed the Global State Diagram...................................................................................................................................... 39
•
Fixed typos in the Register Address Map section ................................................................................................................ 44
•
Changed the list of access types to be more simple and added a note for reserved bits in the Access Type Codes
table ...................................................................................................................................................................................... 44
•
Changed the first paragraph in the 5-V Operation Without a Battery section ...................................................................... 77
•
Added the Documentation Support section .......................................................................................................................... 83
Changes from Revision G (January 2015) to Revision H
Page
•
Added a Reference Design button to the top of the first page ............................................................................................... 1
•
Revised Figure 4 ................................................................................................................................................................. 20
•
Reversed STROBE 14 and STROBE 15 in the second paragraph of Special Strobes (STROBE 14 and 15) .................. 22
•
Changed PFMENx bit value required to force PWM operation at light loads from 0 to 1.................................................... 34
•
Changed Figure 24 .............................................................................................................................................................. 39
•
Changed text in RESET paragraph ...................................................................................................................................... 41
•
Added a row to Table 37 ...................................................................................................................................................... 78
•
Added Receiving Notification... and Community Resources sections.................................................................................. 83
2
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Copyright © 2011–2018, Texas Instruments Incorporated
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TPS65217
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SLVSB64I – NOVEMBER 2011 – REVISED MARCH 2018
Changes from Revision F (April 2013) to Revision G
•
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
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TPS65217
SLVSB64I – NOVEMBER 2011 – REVISED MARCH 2018
www.ti.com
5 Device Comparison Table (1)
The device comparison table summarizes the default regulator output voltages and sequencing order settings for
the four available variants of the TPS65217 device. For details on the preprogrammed register map values that
determine these voltage and strobe sequence settings, refer to Register Maps. For details on specific
applications, refer to the Powering the AM335x with the TPS65217x user's guide.
RAIL
TPS65217A
(TARGETED AT AM335x - ZCE)
TPS65217B
(TARGETED AT AM335x - ZCZ)
TPS65217C
(TARGETED AT AM335x - ZCZ)
TPS65217D
(TARGETED AT AM335x - ZCZ)
VOLTAGE (V)
SEQUENCE
(STROBE)
VOLTAGE (V)
SEQUENCE
(STROBE)
VOLTAGE (V)
SEQUENCE
(STROBE)
VOLTAGE (V)
SEQUENCE
(STROBE)
DCDC1
1.8
1
1.8
1
1.5
1
1.35
1
DCDC2
3.3
2
1.1
5
1.1
5
1.1
5
DCDC3
1.1
3
1.1
5
1.1
5
1.1
5
LDO1 (1)
1.8
15
1.8
15
1.8
15
1.8
15
LDO2
3.3
2
3.3
2
3.3
3
3.3
3
3
1.8
(LDO, 400 mA)
2
1.8
(LDO, 400 mA)
2
4
3.3
(LDO, 400 mA)
4
3.3
(LDO, 400 mA)
4
LS1 or
LDO3
Load switch
1
3.3
(LDO, 200 mA)
LS2 or
LDO4
Load switch
4
3.3
(LDO, 200 mA)
(1)
(1)
4
For more information, see RESET in the PMIC States section.
Strobe 15 (LDO1) is the first rail to be enabled in a sequence, followed by strobe 1 through strobe 7. For more information, see the
Wake-Up and Power-Up Sequencing section.
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SLVSB64I – NOVEMBER 2011 – REVISED MARCH 2018
6 Pin Configuration and Functions
INT_LDO
BYPASS
LDO_PGOOD
nINT
nRESET
LS2_OUT
LS2_IN
AGND
LS1_OUT
LS1_IN
FB_WLED
L4
48
47
46
45
44
43
42
41
40
39
38
37
RSL Package
48-Pin VQFN With Exposed Thermal Pad
Top View
VLDO2
1
36
ISET2
VINLDO
2
35
ISET1
VLDO1
3
34
ISINK1
BAT
4
33
ISINK2
BAT
5
32
VIN_DCDC3
BAT_SENSE
6
31
L3
SYS
7
30
PGND
SYS
8
29
VDCDC3
PWR_EN
9
28
SCL
AC
10
27
SDA
TS
11
26
PGOOD
USB
12
25
PB_IN
Thermal
23
24
VDCDC2
21
VIN_DCDC1
L2
20
L1
22
19
VDCDC1
VIN_DCDC2
18
16
MUX_OUT
VIO
15
NC
17
14
MUX_IN
NC
13
nWAKEUP
Pad
NC – No internal connection
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
AC
10
I
AGND
41
—
AC-adapter input to power path. Connect this pin to an external dc supply.
Analog ground (GND). Connect the AGND pin to the ground plane.
BAT
4, 5
I/O
Battery charger output. Connect these pins to the battery.
BAT_SENSE
6
I
Battery-voltage sense input. Connect the BAT_SENSE pin to the BAT pin directly at the battery
terminal.
BYPASS
47
O
Internal bias voltage (2.25 V). TI does not recommend connecting any external load to this pin.
FB_WLED
38
I
Feedback pin for the WLED boost converter. This pin is also connected to the anode of the
WLED strings.
INT_LDO
48
O
Internal bias voltage (2.3 V). TI does not recommend connecting any external load to this pin.
ISET1
35
I
Low-level WLED current set. Connect this pin to a resistor to ground to set the WLED low-level
current value.
ISET2
36
I
High-level WLED current set. Connect this pin to a resistor to ground to set the WLED high-level
current value.
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SLVSB64I – NOVEMBER 2011 – REVISED MARCH 2018
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Pin Functions (continued)
PIN
I/O
DESCRIPTION
NAME
NO.
ISINK1
34
I
Input to the WLED current SINK1. Connect this pin to the cathode of the WLED string. Current
through the SINK1 pin equals current through the ISINK2 pin. If only one WLED string is used,
short the ISINK1 and ISINK2 pins together.
ISINK2
33
I
Input to the WLED current SINK2. Connect this pin to the cathode of the WLED string. Current
through the SINK1 pin equals current through the ISINK2 pin. If only one WLED string is used,
short the ISINK1 and ISINK2 pins together.
L1
20
O
Switch pin for DCDC1. Connect this pin to the respective inductor.
L2
23
O
Switch pin for DCDC2. Connect this pin to the respective inductor.
L3
31
O
Switch pin for DCDC3. Connect this pin to the respective inductor.
L4
37
O
Switch pin of the WLED boost converter. Connected this pin to the respective inductor.
LDO_PGOOD
46
O
Power-good signal for the LDO regulator (LDO1 and LDO2 only). This pin is a push-pull output.
This pin is pulled low when either the LDO1 or LDO2 regulator is out of regulation.
LS1_IN
39
I
Input voltage pin for load switch 1 (LS1) or LDO3
LS1_OUT
40
O
Output voltage pin for load switch 1 (LS1) or LDO3
LS2_IN
42
I
Input voltage pin for load switch 2 (LS2) or LDO4
LS2_OUT
43
O
Output voltage pin for load switch 2 (LS2) or LDO4
MUX_IN
14
O
Input to analog multiplexer
16
O
Output pin of analog multiplexer
MUX_OUT
NC
15, 17
Not used
nINT
45
O
Interrupt output. This pin is an active-low, open-drain output. This pin is pulled low if an interrupt
bit is set. The output goes high after the bit causing the interrupt in the INT register is read. The
interrupt sources can be masked in the INT register, such that no interrupt is generated when the
corresponding interrupt bit is set.
nRESET
44
I
Reset pin. This pin is an active-low input. Pulling this pin low causes the PMIC to shut down.
When this pin returns to a high voltage level, the PMIC powers up in its default state after a 1-s
delay.
nWAKEUP
13
O
Signal to the host to indicate a power-on event. This pin is an active-low, open-drain output.
PB_IN
25
I
Push-button monitor input. This pin is typically connected to a momentary switch to ground. This
pin is an active-low input.
PGND
30
PGOOD
26
O
Power-good output. This pin is a push-pull output. This pin is pulled low when any of the power
rails are out of regulation.
PWR_EN
9
I
Enable input for the DCDC1, DCDC2, and DCDC3 converters, and the LDO1, LDO2, LDO3, and
LDO4 regulators. Pull this pin high to start the power-up sequence.
SCL
28
I
Clock input for the I2C interface
SDA
27
I/O
Data line for the I2C interface
SYS
7, 8
O
System voltage pin and output of the power path. All voltage regulators are typically powered
from this output.
TS
11
I
Temperature sense input. Connect this pin to the NTC thermistor to sense the battery
temperature. This pin works with 10-kΩ and 100-kΩ thermistors. For more information, see the
Battery-Pack Temperature Monitoring section.
USB
12
I
USB voltage input to power path. Connect this pin to an external voltage from a USB port.
VDCDC1
19
I
DCDC1 output and feedback voltage-sense input
VDCDC2
24
I
DCDC2 output and feedback voltage-sense input
VDCDC3
29
I
DCDC3 output and feedback voltage-sense input
VINLDO
2
I
Input voltage for LDO1 and LDO2
VIN_DCDC1
21
I
Input voltage for DCDC1. This pin must be connected to the SYS pin.
VIN_DCDC2
22
I
Input voltage for DCDC2. This pin must be connected to the SYS pin.
VIN_DCDC3
32
I
Input voltage for DCDC3. This pin must be connected to the SYS pin.
VIO
18
I
Output-high supply for output buffers
VLDO1
3
O
Output voltage of LDO1
6
Power ground. Connect this pin to the ground plane.
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Pin Functions (continued)
PIN
NAME
NO.
VLDO2
1
I/O
Thermal pad
DESCRIPTION
O
Output voltage of LDO2
—
Power-ground connection for the PMIC. Connect the thermal pad to the ground plane.
7 Specifications
7.1 Absolute Maximum Ratings
over operating ambient temperature range (unless otherwise noted) (1) (2)
Supply voltage (with respect to PGND)
Input/output voltage (with respect to
PGND)
MIN
MAX
BAT
–0.3
7
USB, AC
–0.3
20
All pins unless specified separately
–0.3
7
ISINK
–0.3
20
L4, FB_WLED
–0.3
44
0.3
0.3
V
Absolute voltage difference between SYS and any VIN_DCDCx pin or SYS and VINLDO
UNIT
V
V
Terminal current
SYS, USB, BAT
3000
3000
mA
Source or Sink current
PGOOD, LDO_PGOOD
6
6
mA
Sink current
nWAKEUP, nINT
2
2
mA
TJ
Operating junction temperature
125
125
°C
TA
Operating ambient temperature
–40
105
°C
Tstg
Storage temperature
–65
150
°C
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
MIN
Supply voltage, USB, AC
NOM
MAX
UNIT
4.3
5.8
V
2.75
5.5
V
Input current from AC
2.5
A
Input current from USB
1.3
A
2
A
Supply voltage, BAT
Battery current
Input voltage range for DCDC1, DCDC2, and DCDC3
2.7
5.8
V
Input voltage range for LDO1, LDO2
1.8
5.8
V
Input voltage range for LS1 or LDO3, LS2, or LDO4 configured as LDOs
2.7
5.8
V
Input voltage range for LS1 or LDO3, LS2, or LDO4 configured as load switches
1.8
5.8
V
Output voltage range for LDO1
1
3.3
V
Output voltage range for LDO2
0.9
3.3
V
Output voltage range for LS1 or LDO3, LS2, or LDO4
1.8
3.3
V
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Recommended Operating Conditions (continued)
over operating ambient temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Output current DCDC1
0
1.2
A
Output current DCDC2
0
1.2
A
Output current DCDC3
0
1.2
A
mA
Output current LDO1, LDO2
Output current LS1 or LDO3, LS2, or LDO4 configured as LDOs
0
100
TPS65217A
0
200
TPS65217B
0
200
TPS65217C
0
400
TPS65217D
0
400
0
200
Output current LS1 or LDO, LS2 or LDO4 configured as load switches
mA
mA
7.4 Thermal Information
TPS65217
THERMAL METRIC (1)
RSL (VQFN)
UNIT
48 PINS
RθJA
Junction-to-ambient thermal resistance
30.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
16.4
°C/W
RθJB
Junction-to-board thermal resistance
5.6
°C/W
ψJT
Junction-to-top characterization parameter
0.2
°C/W
ψJB
Junction-to-board characterization parameter
5.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
1.3
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics
VBAT = 3.6 V ±5%, TJ = 27ºC (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT VOLTAGE AND CURRENTS
VBAT
Battery input voltage range
VAC
AC adapter input voltage range
VUSB
USB input voltage range
Undervoltage lockout
VUVLO
USB or AC supply connected
0
5.5
2.75
5.5
Valid range for charging
4.3
5.8
V
Valid range for charging
4.3
5.8
V
USB and AC not connected
Measured in respect to
VBAT; supply falling;
VAC = VUSB = 0 V
UVLO[1:0] = 00b
2.73
UVLO[1:0] = 01b
2.89
UVLO[1:0] = 10b
3.18
UVLO[1:0] = 11b
UVLO accuracy
UVLO deglitch time (1)
VOFFSET
AC and USB UVLO offset
VBAT < VUVLO; Device shuts down when VAC,
VUSB drop below VUVLO + VOFFSET
IOFF
OFF current,
Total current into VSYS, VINDCDCx,
VINLDO
All rails disabled, TA = 27°C
ISLEEP
Sleep current,
Total current into VSYS, VINDCDCx,
VINLDO
LDO1 and LDO2 enabled, no load.
All other rails disabled.
VSYS = 4 V, TA = 0.105°C
V
V
3.3
–2%
2%
4
6
ms
200
mV
6
µA
80
106
µA
POWER PATH AC AND USB DETECTION LIMITS
(1)
8
Not tested in production
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Electrical Characteristics (continued)
VBAT = 3.6 V ±5%, TJ = 27ºC (unless otherwise noted)
PARAMETER
VIN(DT)
VIN(NDT)
AC and USB voltage-detection threshold
AC and USB voltage-removal detection
threshold
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VBAT > VUVLO, AC and USB valid when VACUSB – VBAT > VIN(DT)
190
mV
VBAT < VUVLO, AC and USB valid when VAC-USB
> VIN(DT)
4.3
V
VBAT > VUVLO, AC and USB invalid when
VAC/USB – VBAT < VIN(DT)
125
VBAT < VUVLO, AC and USB invalid when VACUSB < VIN(DT)
tRISE
VAC, VUSB rise time
Voltage rising from 100 mV to 4.5 V. If rise time
is exceeded, device may not power up.
tDG(DT)
Power detected deglitch (1)
AC or USB voltage increasing
VIN(OVP)
Input overvoltage detection threshold
USB and AC input
VUVLO +
VOFFSET
V
50
22.5
5.8
6
mV
ms
ms
6.4
V
150
µs
POWER PATH TIMING
tSW(PSEL)
Switching from AC to USB (1)
POWER PATH MOSFET CHARACTERISTICS
VDO, AC
AC input switch dropout voltage
VDO, USB
USB input switch dropout voltage
VDO, BAT
Battery switch dropout voltage
IAC[1:0] = 11b (2.5 A), ISYS = 1 A
150
IUSB[1:0] = 01b (500 mA), ISYS = 500 mA
100
IUSB[1:0] = 10b (1300 mA), ISYS = 800 mA
160
VBAT = 3 V, IBAT = 1 A
mV
mV
60
mV
POWER PATH INPUT CURRENT LIMITS
IACLMT
Input current limit; AC pin
IUSBLMT
Input current limit; USB pin
IBAT
Battery load current (1)
IAC[1:0] = 00b
90
IAC[1:0] = 01b
480
130
IAC[1:0] = 10b
1000
1500
IAC[1:0] = 11b
2000
2500
580
IUSB[1:0] = 00b
90
IUSB[1:0] = 01b
460
IUSB[1:0] = 10b
1000
1300
IUSB[1:0] = 11b
1500
1800
mA
100
500
2
mA
A
POWER PATH BATTERY SUPPLEMENT DETECTION
VBSUP
Battery supplement threshold
VSYS ≤ VBAT – VBSUP1,
VSYS falling IUSB[1:0] = 10b
40
Battery supplement hysteresis
VSYS rising
20
mV
POWER PATH BATTERY PROTECTION
VBAT(SC)
BAT pin short-circuit detection threshold
IBAT(SC)
Source current for BAT pin short-circuit
detection
1.3
1.5
1.7
7.5
V
mA
INPUT BASED DYNAMIC POWER PATH MANAGEMENT (DPPM)
VDPPM
Threshold at which DPPM loop is
enabled
I2C selectable
3.5
4.25
4.1
4.25
–2%
1%
V
BATTERY CHARGER
VOREG
Battery charger voltage
I2C selectable
Battery charger accuracy
VPRECHG = 0b
2.9
VPRECHG = 1b
2.5
V
VLOWV
Precharge to fast-charge transition
threshold
tDGL1(LOWV)
Deglitch time on precharge to fast-charge
transition (1)
25
ms
tDGL2(LOWV)
Deglitch time on fast-charge to precharge
transition (1)
25
ms
ICHG
Battery fast charge current range
VOREG > VBAT > VLOWV,
VIN = VUSB = 5 V
ICHRG[1:0] = 00b
300
ICHRG[1:0] = 01b
ICHRG[1:0] = 10b
ICHRG[1:0] = 11b
V
400
450
500
550
700
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Electrical Characteristics (continued)
VBAT = 3.6 V ±5%, TJ = 27ºC (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
ICHRG[1:0] = 00b
IPRECHG
40
ICHRG[1:0] = 10b
25
ICHRG[1:0] = 11b
Charge current value for termination
detection threshold (fraction of ICHG)
UNIT
50
75
mA
70
TERMIF[1:0] = 00b
ITERM
MAX
30
ICHRG[1:0] = 01b
Precharge current
TYP
2.5%
TERMIF[1:0] = 01b
3%
7.5%
TERMIF[1:0] = 10b
15%
TERMIF[1:0] = 11b
18%
(1)
tDGL(TERM)
Deglitch time, termination detected
VRCH
Recharge detection threshold
tDGL(RCH)
Deglitch time, recharge threshold
detected (1)
IBAT(DET)
Sink current for battery detection
TJ = 27°C
tDET
Battery detection timer. IBAT(DET) is pulled
from the battery for tDET. If BAT voltage
stays above VRCH threshold the battery is
connected. (1)
VBAT < VRCH;
tCHG
Charge safety timer (1)
Safety timer range, thermal and DPPM not
active, selectable by I2C
tPRECHG
Precharge timer (1)
Pre charge timer, thermal
and DPPM loops not
active, selectable by I2C
10%
125
Voltage below VOREG
150
100
ms
70
125
3
7.5
ms
10
250
4
30
PCHRGT = 1b
60
mA
ms
8
PCHRGT = 0b
mV
h
60
min
BATTERY NTC MONITOR
tTHON
Thermistor power on time at charger off,
sampling mode on
tTHOFF
Thermistor power sampling period at
charger off, sampling mode on
Pullup resistor from thermistor to Internal
LDO, I2C selectable
NTC_TYPE = 1 (10-kΩ NTC)
7.35
RNTC_PULL
NTC_TYPE = 0 (100-kΩ NTC)
60.5
Accuracy
TA = 27°C
VLTF
Low-temperature failure threshold
High-temperature failure threshold
Thermistor detection threshold
tBATDET
Thermistor not detected. Battery not
present deglitch (1)
1
s
–3%
Temperature rising
1610
Temperature rising
Temperature falling
kΩ
3%
1660
Temperature rising
VDET
ms
Temperature falling
Temperature falling
VHTF
10
mV
910
TRANGE = 0b
860
mV
667
TRANGE = 1b
622
1750
1850
26
mV
ms
THERMAL REGULATION
TJ(REG)
Temperature regulation limit, temperature
at which charge current is decreased
111
123
°C
DCDC1 (BUCK)
VIN
Input voltage range
VIN_DCDC1 pin
IQ,SLEEP
Quiescent current in SLEEP mode
No load, VSYS = 4 V, TA = 25°C
External resistor divider (XADJ1 = 1b)
Output voltage range
VOUT
IOUT
(2)
10
2.7
VSYS
30
0.6
VIN
0.9
1.8 (2)
–2%
3%
2
I C selectable in 25-mV steps
(XADJ1 = 0b)
DC output voltage accuracy
VIN = VOUT + 0.3 V to 5.8 V;
0 mA ≤ IOUT ≤ 1.2 A
Power-save mode (PSM) ripple voltage
IOUT = 1 mA, PFM mode
L = 2.2 µH, COUT = 20 µF
Output current range
40
0
V
µA
V
mVpp
1.2
A
Contact factory for 3.3-V option.
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Electrical Characteristics (continued)
VBAT = 3.6 V ±5%, TJ = 27ºC (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
High-side MOSFET on-resistance
VIN = 2.7 V
170
Low-side MOSFET on-resistance
VIN = 2.7 V
120
High-side MOSFET leakage current
VIN = 5.8 V
2
Low-side MOSFET leakage current
VDS = 5.8 V
1
ILIMIT
Current limit (high- and low-side
MOSFET).
2.7 V < VIN < 5.8 V
fSW
Switching frequency
VFB
Feedback voltage
XADJ = 1b
600
mV
tSS
Soft-start time
Time to ramp VOUT from 5% to 95%, no load
750
µs
rDS(on)
ILEAK
RDIS
Internal discharge resistor at L1
L
Inductor
COUT
1.6
1.95
(3)
Output capacitor
Ceramic
mΩ
2.25
µA
A
2.55
MHz
250
Ω
1.5
2.2
µH
10
22
µF
20
mΩ
ESR of output capacitor
DCDC2 (BUCK)
VIN
Input voltage range
VIN_DCDC2 pin
IQ,SLEEP
Quiescent current in SLEEP mode
No load, VSYS = 4 V, TA = 25°C
Output voltage range
VOUT
IOUT
2.7
VSYS
30
External resistor divider (XADJ2 = 1b)
0.6
VIN
I2C selectable in 25-mV steps
(XADJ2 = 0b)
0.9
3.3
–2%
3%
DC output voltage accuracy
VIN = VOUT + 0.3 V to 5.8 V;
0 mA ≤ IOUT ≤ 1.2 A
Power-save mode (PSM) ripple voltage
IOUT = 1 mA, PFM mode
L = 2.2 µH, COUT = 20 µF
Output current range
40
0
V
µA
V
mVpp
1.2
A
High-side MOSFET on-resistance
VIN = 2.7 V
170
Low-side MOSFET on-resistance
VIN = 2.7 V
120
High-side MOSFET leakage current
VIN = 5.8 V
2
Low-side MOSFET leakage current
VDS = 5.8 V
1
ILIMIT
Current limit (high and low side
MOSFET).
2.7 V < VIN < 5.8 V
fSW
Switching frequency
VFB
Feedback voltage
XADJ = 1b
600
mV
tSS
Soft-start time
Time to ramp VOUT from 5% to 95%, no load
750
µs
RDIS
Internal discharge resistor at L2
L
Inductor
rDS(on)
ILEAK
COUT
Output capacitor
1.6
1.95
Ceramic
mΩ
2.25
µA
A
2.55
MHz
250
Ω
1.5
2.2
µH
10
22
µF
20
mΩ
ESR of output capacitor
DCDC3 (BUCK)
VIN
Input voltage range
VIN_DCDC3 pin
IQ,SLEEP
Quiescent current in SLEEP mode
No load, VSYS = 4 V, TA = 25°C
Output voltage range
VOUT
IOUT
(3)
VSYS
30
0.6
VIN
I2C selectable in 25-mV steps
(XADJ3 = 0b)
0.9
1.5 (2)
–2%
3%
DC output voltage accuracy
VIN = VOUT + 0.3 V to 5.8 V;
0 mA ≤ IOUT ≤ 1.2 A
Power save mode (PSM) ripple voltage
IOUT = 1 mA, PFM mode
L = 2.2 µH, COUT = 20 µF
40
0
VIN = 2.7 V
170
Low side MOSFET on-resistance
VIN = 2.7 V
120
V
mVpp
1.2
High-side MOSFET on-resistance
V
µA
External resistor divider (XADJ3 = 1b)
Output current range
rDS(on)
2.7
A
mΩ
Can be factory disabled.
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Electrical Characteristics (continued)
VBAT = 3.6 V ±5%, TJ = 27ºC (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
High-side MOSFET leakage current
VIN = 5.8 V
2
Low-side MOSFET leakage current
VDS = 5.8 V
1
ILIMIT
Current limit (high- and low-side
MOSFET).
2.7 V < VIN < 5.8 V
fSW
Switching frequency
VFB
Feedback voltage
XADJ = 1b
600
mV
tSS
Soft-start time
Time to ramp VOUT from 5% to 95%, no load
750
µs
RDIS
Internal discharge resistor at L1, L2
L
Inductor
ILEAK
Output capacitor
COUT
1.6
1.95
Ceramic
2.25
µA
A
2.55
MHz
250
Ω
1.5
2.2
µH
10
22
µF
20
mΩ
ESR of output capacitor
LDO1, LDO2
VIN
Input voltage range
IQ,SLEEP
Quiescent current in SLEEP mode
Output voltage range
VOUT
1.8
No load, VSYS = 4 V, TA = 25°C
LDO1, I2C selectable
1
3.3
LDO2, I2C selectable
0.9
3.3
V
IOUT = 10 mA, VIN > VOUT + 200 mV,
VOUT > 0.9 V
–2%
2%
Line regulation
VIN = 2.7 V - 5.5 V, VOUT = 1.2 V,
IOUT = 100 mA
–1%
1%
IOUT = 1 mA - 100 mA, VOUT = 1.2 V,
VIN = 3.3 V
–1%
1%
–2.5%
2.5%
IOUT = 0 mA - 1 mA, VOUT = 1.2 V,
VIN = 3.3 V
SLEEP state
0
1
ACTIVE state
0
100
IOUT
Output current range
ISC
Short circuit current limit
Output shorted to GND
VDO
Dropout voltage
IOUT = 100 mA, VIN = 3.3 V
RDIS
Internal discharge resistor at output
Output capacitor
V
µA
DC output voltage accuracy
Load regulation
COUT
5.8
5
100
250
mA
200
Ceramic
ESR of output capacitor
mA
mV
430
Ω
2.2
µF
20
mΩ
LS1 OR LDO3, AND LS2 OR LDO4, CONFIGURED AS LDOs
VIN
Input voltage range
IQ,SLEEP
Quiescent current in SLEEP mode
No load, VSYS = 4 V, TA = 25°C
Output voltage range
LS1LDO3 = 1b, LS2LDO4 = 1b
I2C selectable
DC output voltage accuracy
IOUT = 10 mA, VIN > VOUT + 200 mV,
VOUT > 1.8 V
–2%
2%
Line regulation
VIN = 2.7 V - 5.5 V, VOUT = 1.8 V,
IOUT = 200 mA
–1%
1%
Load regulation
IOUT = 1 mA - 200 mA, VOUT = 1.8 V,
VIN = 3.3 V
–1%
1%
TPS65217A
0
200
TPS65217B
0
200
TPS65217C
0
400
Output current range
ISC
Short-circuit current limit
Output shorted to GND
VDO
Dropout voltage
IOUT = 200 mA, VIN = 3.3 V
RDIS
Internal discharge resistor at output (3)
0
V
mA
400
TPS65217A
200
280
TPS65217B
200
280
TPS65217C
400
480
TPS65217D
400
480
mA
200
375
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V
µA
3.3
TPS65217D
12
5.8
30
1.5
VOUT
IOUT
2.7
mV
Ω
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SLVSB64I – NOVEMBER 2011 – REVISED MARCH 2018
Electrical Characteristics (continued)
VBAT = 3.6 V ±5%, TJ = 27ºC (unless otherwise noted)
PARAMETER
COUT
Output capacitor
TEST CONDITIONS
Ceramic
MIN
TYP
MAX
8
10
12
ESR of output capacitor
20
UNIT
µF
mΩ
LS1 OR LDO3, AND LS2 OR LDO4, CONFIGURED AS LOAD SWITCHES
VIN
Input voltage range
LS1_VIN, LS2_VIN pins
RDS(ON)
P-channel MOSFET on-resistance
VIN = 1.8 V, over full temperature range
ISC
Short circuit current limit
Output shorted to GND
RDIS
Internal discharge resistor at output
COUT
Output capacitor
1.8
300
200
5.8
V
650
mΩ
280
mA
375
Ceramic
1
ESR of output capacitor
10
Ω
12
20
µF
mΩ
WLED BOOST
VIN
Input voltage range
VOUT
Max output voltage
VOVP
Output overvoltage protection
RDS(ON)
N-channel MOSFET on-resistance
VIN = 3.6 V
ILEAK
N-channel leakage current
VDS = 25 V, TA = 25°C
ILIMIT
N-channel MOSFET current limit
fSW
Switching frequency
IINRUSH
Inrush current on start-up
L
Inductor
COUT
Output capacitor
2.7
ISINK = 20 mA
5.8
32
37
V
V
38
39
0.6
2
1.6
V
Ω
µA
1.9
1.125
A
MHz
VIN = 3.6 V, 1% duty cycle setting
1.1
VIN = 3.6 V, 100% duty cycle setting
2.1
Ceramic
4.7
µF
20
mΩ
A
18
ESR of output capacitor
µH
WLED CURRENT SINK1, SINK2
VSINK1,2
Overvoltage protection threshold at
ISINK1, ISINK2 pins
VDO, SINK1,2
Current sink drop-out voltage
VISET1,2
ISET1, ISET2 pin voltage
19
Measured from ISINK to GND
DC current set accuracy
DC current matching
fPWM
1
PWM dimming frequency
V
25
RISET = 130.0 kΩ
10
RISET = 86.6 kΩ
15
RISET = 64.9 kΩ
20
RISET = 52.3 kΩ
ISINK1,2
mV
1.24
WLED current range (ISINK1, ISINK2)
WLED sink current
400
V
mA
25
ISINK = 5 mA to 25 mA, 100% duty cycle
–5%
5%
RSET1 = 52.3 kΩ, ISINK = 25 mA,
VBAT = 3.6 V, 100% duty cycle
–5%
5%
RSET1 = 130 kΩ, ISINK = 10 mA,
VBAT = 3.6 V, 100% duty cycle
–5%
5%
FDIM[1:0] = 00b
100
FDIM[1:0] = 01b
200
FDIM[1:0] = 10b
500
FDIM[1:0] = 11b
1000
Hz
ANALOG MULTIPLEXER
Gain, VBAT (VBAT / VOUT,MUX); VSYS
(VSYS / VOUT,MUX)
3
Gain, VTS (VTS / VOUT,MUX); MUX_IN
(VMUX_IN / VMUX_OUT)
1
g
Gain, VICHARGE (VOUT,MUX / VICHARGE)
VOUT
Buffer headroom (VSYS – VMUX_OUT)
V/V
ICHRG[1:0] = 00b
7.575
ICHRG[1:0] = 01b
5.625
ICHRG[1:0] = 10b
4.5
ICHRG[1:0] = 11b
3.214
VSYS = 3.6 V, MUX[2:0] = 101b
(VMUX_IN – VMUX_OUT) / VMUX_IN > 1%
0.7
V/A
1
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Electrical Characteristics (continued)
VBAT = 3.6 V ±5%, TJ = 27ºC (unless otherwise noted)
PARAMETER
ROUT
Output Impedance
ILEAK
Leakage current
TEST CONDITIONS
MIN
TYP
MAX
180
MUX[2:0] = 000b (HiZ), VMUX = 2.25 V
UNIT
Ω
1
µA
LOGIC LEVELS AND TIMING CHARACTERISTICS
(SCL, SDA, PB_IN, PGOOD, LDO_PGOOD, PWR_EN, nINT, nWAKEUP, nRESET)
PGOOD comparator treshold,
All DC/DC converters and LDOs (1)
PGTH
PGDG
PGOOD deglitch time
PGDLY
PGOOD delay time
tHRST
PB-IN hard-reset-detect time (1)
tDG
RPULLUP
Output voltage falling, % of set voltage
90%
Output voltage rising, % of set voltage
95%
Output voltage falling, DCDC1, DCDC2,
DCDC3
2
4
Output voltage falling, LDO1, LDO2, LDO3,
LDO4
1
2
ms
PGDLY[1:0] = 00b
20
PGDLY[1:0] = 01b
100
PGDLY[1:0] = 10b
200
PGDLY[1:0] = 11b
400
ms
8
PB_IN pin deglitch time (1)
50
PWR_EN pin deglitch time (1)
50
nRESET pin deglitch time (1)
30
PB_IN internal pullup resistor
100
nRESET internal pullup resistor
100
s
ms
kΩ
VIH
High-level input voltage
PB_IN, SCL, SDA, PWR_EN, nRESET
1.2
VIN
V
VIL
Low-level input voltage
PB_IN, SCL, SDA, PWR_EN, nRESET
0
0.4
V
IBIAS
Input bias current
PB_IN, SCL, SDA
1
µA
VOL
Output low voltage
VOH
Output high voltage
PGOOD, LDO_PGOOD, IO = 1 mA
ILEAK
Pin leakage current
nINT, nWAKEUP
Pin pulled up to 3.3-V supply
0.01
nINT, nWAKEUP, IO = 1 mA
0.3
PGOOD, LDO_PGOOD, IO = 1 mA
0.3
VIO – 0.3
V
0.2
I2C slave address
V
µA
0x24h
OSCILLATOR
fOSC
Oscillator frequency
Oscillator frequency accuracy
9
TA = –40°C to 105°C
–10%
MHz
10%
OVERTEMPERATURE SHUTDOWN
TOTS
14
Overtemperature shutdown
Increasing junction temperature
150
°C
Hysteresis
Decreasing junction temperature
20
°C
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7.6 I2C Timing Requirements
VBAT = 3.6 V ±5%, TA = 25ºC, CL = 100 pF (unless otherwise noted). For the I2C timing diagram, see Figure 1.
MIN
fSCL
Serial clock frequency
tHD;STA
Hold time (repeated) START
condition. After this period, the first
clock pulse is generated
tLOW
LOW period of the SCL clock
tHIGH
HIGH period of the SCL clock
tSU;STA
Set-up time for a repeated START
condition
tHD;DAT
NOM
100
Data hold time
MAX
UNIT
400
kHz
SCL = 100 KHz
4
µs
SCL = 400 KHz
600
ns
SCL = 100 KHz
4.7
SCL = 400 KHz
1.3
SCL = 100 KHz
4
µs
SCL = 400 KHz
600
ns
SCL = 100 KHz
4.7
µs
SCL = 400 KHz
600
SCL = 100 KHz
0
3.45
µs
SCL = 400 KHz
0
900
ns
SCL = 100 KHz
250
SCL = 400 KHz
100
µs
ns
tSU;DAT
Data set-up time
ns
tr
Rise time of both SDA and SCL
signals
SCL = 100 KHz
1000
SCL = 400 KHz
300
tf
Fall time of both SDA and SCL
signals
SCL = 100 KHz
300
SCL = 400 KHz
300
tSU;STO
Set-up time for STOP condition
ns
ns
SCL = 100 KHz
4
µs
SCL = 400 KHz
600
ns
tBUF
Bus free time between stop and start SCL = 100 KHz
condition
SCL = 400 KHz
4.7
tSP
Pulse duratoin of spikes which mst
be suppressed by the input filter
SCL = 100 KHz
NA
NA
SCL = 400 KHz
0
50
Cb
Capacitive load for each bus line
µs
1.3
SCL = 100 KHz
400
SCL = 400 KHz
400
ns
pF
SDA
tf
tLOW
tr
tSU;DAT
tHD;STA
tSP
tr
tBUF
SCL
tHD;STA
S
tHD;DAT tHIGH
tSU;STA
tSU;STO
Sr
tf
P
S
Figure 1. I2C Data Transmission Timing
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7.7 Typical Characteristics
100%
95%
90%
Efficiency (%)
85%
80%
75%
70%
65%
60%
3.3 Vout
1.8 Vout
1.1 Vout
55%
50%
0.000
0.200
0.400
0.600
0.800
1.000
1.200
Load Current (A)
Figure 2. TPS65217x DC/DC Efficiency, 5 VIN and an LQM2HPN2R2MG0L Inductor
16
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8 Detailed Description
8.1 Overview
The TPS65217x device has three step-down converters, two low-dropout (LDO) regulators, two load switches, a
linear battery charger, a white LED driver, and a power path. The system can be supplied by any combination of
a USB port, 5-V AC adaptor, or Li-ion battery. The device is characterized across a temperature range from
–40°C to +105°C, making it suitable for industrial applications where a 5-V power supply rail is available. The
device offers configurable power-up and power-down sequencing and several low-speed, system-level functions
such as a power-good output, push-button monitor, hardware-reset function, and temperature sensor to protect
the battery.
The I2C interface has comprehensive features for using the TPS65217x device. All rails, load switches, and LDO
regulators can be enabled or disabled. Power-up and power-down sequences, overtemperature thresholds, and
overcurrent threshold can be programmed through the I2C interface. The I2C interface also monitors battery
charging and controls LED dimming parameters.
The three DC/DC step-down converters can each supply up to 1.2 A of current. The output voltages for each
converter can be adjusted through the I2C interface in real time to support processor clock frequency changes.
All three converters feature dynamic voltage positioning to decrease voltage undershoots and overshoots.
Typically, the converters work at a fixed-frequency of 2.25 MHz, pulse-width modulation (PWM) at moderate-toheavy load currents. At light load currents the converters automatically go to power save mode and operate in
pulse-frequency modulation (PFM) for maximum efficiency across the widest possible range of load currents. For
low-noise applications, each converter can be forced into fixed-frequency PWM using the I2C interface. The stepdown converters allow the use of small inductors and capacitors to achieve a small solution size.
The device has two traditional LDO regulators: LDO1 and LDO2. The LDO1 and LDO2 regulators can support up
to 100 mA each during normal operation, but in the SLEEP state they are limited to 1 mA to decrease quiescent
current while supporting system-standby mode. The TPS65217A variant of the device also has two load
switches: LS1 and LS2. For all other TPS65217x variants, these two outputs are configured as LDO regulators:
LDO3 and LDO4. The LDO3 and LDO4 regulators can support up to 200 mA (TPS65217B), or 400 mA
(TPS65217C and TPS65217D). All four LDO regulators have a wide input voltage range that allows them to be
supplied either from one of the DC/DC converters or directly from the system voltage node.
The device has two power-good logic signals. The primary power-good signal, PGOOD, monitors the DCDC1,
DCDC2, and DCDC3 converters, and LS1 (or LDO3) and LS2 (or LDO4) configurable power outputs. This signal
is high in the ACTIVE state, but low in the SLEEP, RESET, and OFF states. The secondary power-good signal,
LDO_PGOOD, monitors LDO1 and LDO2; the signal is high in the ACTIVE and SLEEP states, but low in the
RESET and OFF states. The PGOOD and LDO_PGOOD signals are both pulled low when all the monitored rails
are pulled low, or when one or more of the monitored rails are enabled and have encountered a fault, typically an
output short or overcurrent condition.
The highly-efficient boost converter has two current sinks that can drive two strings of up to 10 LEDs at 25 mA
each, or one string of 20 LEDs at 50 mA. An internal PWM signal and I2C control support brightness and
dimming. Both current sources are controlled together and cannot operate independently.
The triple system power path lets simultaneous and independent powering of the system and battery charging
through the linear battery charger for single-cell Li-ion and Li-Polymer batteries. The AC input is prioritized over
USB input as the power source for charging the battery and powering the system. Both these sources are
prioritized over the battery for powering the system to decrease the number of charge and discharge cycles on
the battery.
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8.2 Functional Block Diagram
4.7 mF
AC
from USB connector
from USB connector
SYS
Q1
USB
to system load
Q1
22 mF
4.7 mF
MUX
100 nF
from system
Linear Charger
and
Power-Path
Management
VBAT
VSYS
VICHARGE
VTS
MUX_OUT
to system host or µC
MUX_IN
Single-Cell
Li+ Battery
BAT_SENSE
TEMP SENSE
INT_LDO
100 nF
BAT
Q2
TS
BIAS
BYPASS
10 mF
NTC
10 mF
VIO
I/O Voltage
PWR_EN
from system host or µC
PGOOD
Always-on
supply
Momentatary Push-Button
LDO_PGOOD
to system host or µC
100 kW
PB_IN
DIGITAL
100 kW VIO (always on)
nWAKEUP
Always-on
supply
nRESET
from system host or µC
to system host or µC
nINT
100 kW
to system host or µC
100 kW VIO (always on)
to system host or µC
4.7 mF
VIO
from system host or µC
SCL
VIO
SDA
from system host or µC
VIN_DCDC1
SYS
I2C
L1
L4
SYS
DCDC1
to system
VDCDC1
10 mF
4.7 mF
FB_WLED
4.7 mF
Up to 2 ´10 LEDs
VIN_DCDC2
WLED
Driver
SYS
L2
ISINK1
DCDC2
to system
VDCDC2
10 mF
ISINK2
4.7 mF
ISET1
ISET2
VIN_DCDC3
SYS
L3
DCDC3
4.7 mF
VDCDC3
to system
10 mF
VINDO
SYS
VLDO1
to system
VLDO2
to system
LS1_IN
LDO1
LOAD SW1
or LDO3
LDO2
from 1.8-V to 5.8-V supply
LS1_OUT
to system load
10 mF
2.2 mF
LS2_IN
18
LS2_OUT
to system load
10 mF
AGND
PGND
LOAD SW2
or LDO4
from 1.8-V to 5.8-V supply
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8.3 Feature Description
8.3.1 Wake-Up and Power-Up Sequencing
The TPS65217x device has a predefined power-up–power-down sequence which, in a typical application, does
not require changing. However, users can define custom sequences through I2C control. The power-up sequence
is defined by strobes and delay times. Each output rail is assigned to a strobe to determine the order in which the
rails are enabled. The delay times from one strobe to the next are programmable in a range from 1 ms to 10 ms.
NOTE
Although the user can modify the power-up and power-down sequence through the SEQx
registers, those registers are reset to default values when the device goes to the SLEEP,
OFF, or RESET state. In practice, this situation means that the power-up sequence is
fixed and a custom power-down sequence must be written each time the device is
powered up.
Custom power-up and power-down sequences can be tested and verified in the ACTIVE
state (PWR_EN pin pulled high) by using I2C to toggle the SEQUP and SEQDWN bits.
Permanent changes to the default power-up sequence timing require custom programming
at the TI factory.
8.3.1.1 Power-Up Sequencing
When the power-up sequence is initiated, STROBE1 occurs and any rail assigned to this strobe is enabled. After
a delay time of DLY1, STROBE2 occurs and the rail assigned to this strobe is powered up. The sequence
continues until all strobes have occurred and all DLYx times have been executed.
AC
(input)
USB
(input)
PB
(input)
nWAKEUP
(output)
PWR_EN
(input)
5s max
DLY1
DLY6
STROBE15
SEQ = 1111
STROBE14
SEQ = 1110
STROBE 1
SEQ = 0001
DLY2
STROBE 2
SEQ = 0010
DLY3
STROBE 3
SEQ = 0011
DLY4
STROBE 4
SEQ = 0100
DLY5
STROBE 5
SEQ = 0101
DLY6
STROBE 6
SEQ = 0110
STROBE 7
SEQ = 0111
The power-up sequence is defined by strobes and delay times. In this example, push-button low is the power-up
event.
Figure 3. Power-Up Sequence
The default power-up sequence can be changed by writing to the SEQ1 through SEQ6 registers. Strobes are
assigned to rails by writing to the SEQ1 through SEQ4 registers. A rail can be assigned to only one strobe but
multiple rails can be assigned to the same strobe. Delays between strobes are defined in the SEQ5 and SEQ6
registers.
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Feature Description (continued)
STROBE 15
STROBE 1
STROBE 2
DLY 1
5ms
STROBE 3
DLY 2
1ms
STROBE 4
DLY 3
1ms
VSYS
WAKEUP
(1)
PWR_EN (DG) (2)
(3)
LDO1
LDO2
DCDC1
DCDC2
DCDC3
LS1
LS2
PGDLY 20 ms
PGOOD
For default power-up sequences of the other TPS65217x family members, refer to the Powering the AM335x with the
TPS65217x user's guide.
Figure 4. Default Power-Up Sequence for the TPS65217A Device
The power-up sequence is executed if the following events occurs:
From the OFF state (going to the ACTIVE state):
• Push-button is pressed (falling edge on PB_IN) OR
• USB voltage is asserted (rising edge on USB) OR
• The AC adaptor is inserted (rising edge on the AC pin)
The PWR_EN pin is level-sensitive (opposed to edge-sensitive), and the pin can be asserted before or after the
previously listed power-up events. However, the PWR_EN pin must be asserted within 5 s of the power-up event;
otherwise, the power-down sequence is triggered and the device goes to the OFF state. If a fault occurs because
the device is in undervoltage lockout (UVLO) or requires overtemperature shutdown (OTS), the device goes to
the OFF state.
From the SLEEP state (going to the ACTIVE state):
• The push-button is pressed (falling edge on the PB_IN pin) OR
• The USB voltage is asserted (rising edge on the USB pin) OR
• The AC adaptor is inserted (rising edge on the AC pin) OR
• The PWR_EN pin is asserted (pulled high).
In the SLEEP state, the power-up sequence can be triggered by asserting the PWR_EN pin only, and the pushbutton press or AC and USB assertion are not required. If a fault occurs because the device is in undervoltage
lockout (UVLO) or requires overtemperature shutdown (OTS), the device goes to the OFF state.
In the ACTIVE state:
20
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Feature Description (continued)
The sequencer can be triggered any time by setting the SEQUP bit in the SEQ6 register high. The SEQUP bit is
automatically cleared after the sequencer is complete.
Rails that are not assigned to a strobe (the SEQ bit set to 0000b) are not affected by power-up and power-down
sequencing and stay in their current ON or OFF state regardless of the sequencer. Any rail can be enabled or
disabled at any time by setting the corresponding enable bit in the ENABLE register with the only exception that
the ENABLE register cannot be accessed while the sequencer is active. Enable bits always reflect the current
enable state of the rail, that is, the sequencer sets or resets the enable bits for the rails under its control. Also,
whenever faults occur which shut-down the power-rails, the corresponding enable bits are reset.
8.3.1.2 Power-Down Sequencing
By default, power-down sequencing follows the reverse power-up sequence. When the power-down sequence is
triggered, STROBE7 occurs first, and any rail assigned to STROBE7 is shut down. After a delay time of DLY6,
STROBE6 occurs, and any rail assigned to STROBE6 is shut down. The sequence continues until all strobes
have occurred and all DLYx times have been executed.
In some applications, all rails may be required to shut down at the same time with no delay between rails. Set the
INSTDWN bit in the SEQ6 register to bypass all delay times and shut-down all rails at the same time when the
power-down sequence is triggered.
A
•
•
•
•
•
•
power-down sequence is executed if one of the following events occurs:
The SEQDWN bit is set.
The PWR_EN pin is pulled low.
The push-button is pressed for more than 8 s.
The nRESET pin is pulled low.
A fault occurs in the device (either an OTS, UVLO, or PGOOD failure).
The PWR_EN pin is not asserted (pulled high) within 5 s of a power-up event and the OFF bit is set to 1b.
When the device goes from the ACTIVE to the OFF state, any rail not controlled by the sequencer is shut down
after the power-down sequencer is complete. When the device goes from the ACTIVE to the SLEEP state, any
rail not controlled by the power-down sequencer stays in its present state.
PWR_EN
(input)
DLY6
STROBE 7
SEQ = 0111
DLY5
STROBE 6
SEQ = 0110
DLY4
STROBE 5
SEQ = 0101
DLY3
STROBE 4
SEQ = 0100
DLY2
STROBE 3
SEQ = 0011
DLY1
STROBE 2
SEQ = 0010
DLY5
STROBE 1
SEQ = 0001
DLY6
STROBE14
SEQ = 1110
STROBE15
SEQ = 1111
Figure 5. Power-Down Sequence from ON State to OFF State (All Rails Turned OFF)
PWR_EN
(input)
DLY6
STROBE 7
SEQ = 0111
DLY5
STROBE 6
SEQ = 0110
DLY4
STROBE 5
SEQ = 0101
DLY3
STROBE 4
SEQ = 0100
DLY2
STROBE 3
SEQ = 0011
DLY1
STROBE 2
SEQ = 0010
STROBE 1
SEQ = 0001
STROBE14 and STROBE15 are omitted to let the LDO1 or LDO2 regulators stay ON.
Figure 6. Power-Down Sequence from ON State to SLEEP State
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Feature Description (continued)
8.3.1.3 Special Strobes (STROBE 14 and 15)
STROBE 14 and STROBE 15 are not assigned to the sequencer but used to control rails that are always-on, that
is, are powered up as soon as the device goes out of the OFF state and stay ON in the SLEEP state. STROBE
14 and STROBE 15 options are available only for the LDO1 and LDO2 rails and not for any of the other rails.
STROBE 15 occurs as soon as the push-button is pressed or the USB or AC adaptor is connected to the device.
STROBE 14 occurs after a delay time of DLY6. The LDO1 and LDO2 rails can be assigned to either strobe but
by default only LDO1 is assigned to special STROBE 15 (default settings must be programmed by TI at the
factory because all registers are reset during transitions to the OFF or SLEEP states).
When a power-down sequence is initiated, STROBE 15 and STROBE 14 occur only if the OFF bit is set.
Otherwise both strobes are omitted, and the LDO1 and LDO2 rails keep their state.
8.3.2 Power Good
The power-good signals are used to indicate if an output rail is in regulation or at fault. Internally, all power-good
signals of the enabled rails are monitored at all times and if any of the signals goes low, a fault is declared. All
power-good signals are internally deglitched. When a fault occurs, all output rails are powered down and the
device goes to the OFF state.
The TPS65217x device has two power-good output pins: one is dedicated to the LDO1 and LDO2 rails
(LDO_PGOOD) and one for all other rails (PGOOD). The power-good signals that are indicated by the PGOOD
pin are programmable. The following rules apply to both output pins:
• The power-up default state for the PGOOD pin and the LDO_PGOOD pin is low. When all rails are disabled,
the PGOOD and LDO_PGOOD pins are both low.
• Only enabled rails are monitored. Disabled rails are ignored.
• Power-good monitoring of a particular rail starts 5 ms after the rail has been enabled. The power-good signal
is continuously monitored after the 5-ms deglitch time expires.
• The signals controlling the PGOOD and LDO_PGOOD pins are delayed by the PGDLY (20 ms default) after
the sequencer is done.
• If a fault occurs on an enabled rail (such as a shorted output, OTS condition, or UVLO condition), the PGOOD
pin, LDO_PGOOD pin, or both pins are pulled low, and all rails are shut down.
• If the user disables a rail (either manually or through the sequencer), this action has no effect on the PGOOD
or LDO_PGOOD pin.
• If the user disables all rails (either manually or through the sequencer), the PGOOD pin, LDO_PGOOD pin, or
both pins are pulled low.
8.3.2.1 LDO1, LDO2 Power-Good (LDO_PGOOD)
The LDO_PGOOD pin is a push-pull output that is driven to a high level when either the LDO1 regulator or the
LDO2 regulator is enabled and in regulation. The LDO_PGOOD pin is pulled low when both LDO regulators are
disabled or one is enabled but has encountered a fault. A typical fault is an output short or overcurrent condition.
In normal operation, the LDO_PGOOD pin is high in the ACTIVE and SLEEP states and low in the RESET and
OFF states.
8.3.2.2 Primary Power-Good (PGOOD)
The primary PGOOD pin has similar functionality to the LDO_PGOOD pin except that PGOOD monitors the
DCDC1, DCDC2, and DCDC3 converters, and the LDO3 and LDO4 outputs configured as LDO regulators. The
user can also choose to monitor the LDO1 and LDO2 regulators by setting the LDO1PGM and LDO2PGM mask
bits low in the DEFPG register. By default, the power-good signal of the LDO1 and LDO2 regulators does not
affect the PGOOD pin (mask bits are set to 1b by default). In normal operation the PGOOD pin is high in the
ACTIVE state but low in the SLEEP, RESET, and OFF states.
In the SLEEP state and the WAIT PWR_EN state, the PGOOD pin is forced low. The PGOOD pin is set high
after the device goes to the ACTIVE state, the power sequencer is complete, and the PGDLY time is expired.
22
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Feature Description (continued)
8.3.2.3 Load Switch PGOOD
When either LS1 or LS2 is configured as a load switch, the device ignores the respective power-good signal. An
overcurrent or short condition present on the LS1 or LS2 load switch does not affect the PGOOD pin or any of
the power rails unless the power dissipation leads to thermal shutdown.
VSYS
5s max
PB_IN
nWAKEUP
PWR_EN (deglitched)
LDO1
5ms
PG LDO1 (internal)
DLY5
LDO2
PG LDO2 (internal)
DCDC1
5ms
PG DCDC1 (internal)
DCDC2
FAULT
DLY1
DLY1
5ms
DLY2
PG DCDC2 (internal)
DLY2
DCDC3
5ms
DLY3
PG DCDC3 (internal)
LS1/LDO3
5ms
PG LS1/LDO3 (internal)
DLY6+DLY5+DLY4
DLY3
LS2/LDO4
5ms
PG LS2/LDO4 (internal)
LDO_PGOOD
PG_DLY
PG_DLY
PGOOD
This figure also shows the power-down sequence for the case of a short on the DCDC2 output.
Figure 7. Default Power-Up Sequence
8.3.3 Push-Button Monitor (PB_IN)
The TPS65217x device has an active-low PB_IN input pin that is typically connected to ground through a pushbutton switch. The PB_IN input has a 50-ms deglitch time and an internal pull-up resistor that is connected to an
always-on supply. The always-on supply is an unregulated internal power rail that is functionally equivalent to the
power path. The source of the always-on supply is the same as the source of the SYS pin. The push-button
monitor has two functions. The first is to power-up the device from the OFF or SLEEP state when a falling edge
is detected on the PB_IN pin. The second is to power cycle the device when the PB_IN pin is held low for more
than 8 s.
For a description of each function, see the Device Functional Modes section. A change in push-button status (the
PB_IN pin goes from high to low or low to high) is signaled to the host through the PBI interrupt bit in the INT
register. The current status of the interrupt can be checked by reading the PB status bit in the STATUS register.
Figure 8 shows a timing diagram for the push-button monitor.
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Feature Description (continued)
PB is pressed,
INT pin is pulled
low, PB status
bit is set.
PB is pressed,
INT pin is pulled
low, PB status
bit is reset.
PB is pressed,
INT pin is pulled
low, PB status
bit is set.
PB is released before
INT register is read
through I2C. INT pin
remains low, PB status
bit is reset.
PB_IN pin (input)
PBI interrupt bit
nINT pin (output)
PB status bit
I2C access to INT register
INT register is read
through I2C while PB
remains pressed. INT
pin is released, PB
status bit remains set.
INT register is read
through I2C. INT pin is
released.
INT register is read
through I2C.
Figure 8. Timing Diagram of the Push-Button Monitor Circuit
8.3.4 nWAKEUP Pin (nWAKEUP)
The nWAKEUP pin is an open-drain, active-low output that is used to signal a wakeup event to the system host.
This pin is pulled low whenever the device is in the OFF or SLEEP state and detects a wakeup event as
described in the Device Functional Modes section. The nWAKEUP pin is delayed for 50 ms over the power-up
event and stays low for 50 ms after the PWR_EN pin has been asserted. If the PWR_EN pin is not asserted
within 5 s of the power-up event, the device shuts down and goes to the OFF state. In the ACTIVE state, the
nWAKEUP pin is always high. Figure 9 shows the timing diagram for the nWAKEUP pin.
8.3.5 Power Enable Pin (PWR_EN)
The PWR_EN pin is used to keep the device in the ACTIVE mode after it detects a wakeup event as described
in the Device Functional Modes section. If the PWR_EN pin is not asserted within 5 s of the nWAKEUP pin being
pulled low, the device shuts down the power and goes to either the OFF or SLEEP state, depending on the OFF
bit in the STATUS register. The PWR_EN pin is level-sensitive, meaning that PWR_EN may be pulled high
before the wake-up event.
The PWR_EN pin can also be used to toggle between the ACTIVE and SLEEP states. For more information, see
SLEEP in the PMIC States section.
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Feature Description (continued)
AC
(input)
USB
(input)
PB_IN
(input)
50 ms
deglitch
nWAKEUP
(output)
50 ms
deglitch
PWR_EN
(input)
5s max
In the example shown, the wakeup event is a falling edge on the PB_IN.
(1)
If the PWR_EN pin is not asserted within 5 s of the WAKEUP pin being pulled low, the device goes to the OFF or
SLEEP state
Figure 9. nWAKEUP Timing Diagram
8.3.6 Reset Pin (nRESET)
When the nRESET pin is pulled low, all power rails, including LDO1 and LDO2, are powered down, and the
default register settings are restored. The device stays powered down as long as the nRESET pin is held low,
but for a minimum of 1 s. After the nRESET pin is pulled high, the device goes to the ACTIVE state, and the
default power-up sequence executes. For more information, see RESET in the PMIC States section.
8.3.7 Interrupt Pin (nINT)
The interrupt pin is used to signal any event or fault condition to the host processor. Whenever a fault or event
occurs in the device, the corresponding interrupt bit is set in the INT register, and the open-drain output is pulled
low. The nINT pin is released (Hi-Z) and the fault bits are cleared when the INT register is read by the host.
However, if a failure continues, the corresponding INT bit stays set and the nINT pin is pulled low again after a
maximum of 32 µs.
Interrupt events include pushing or releasing the push-button and a change in the USB or AC voltage status.
The mask bits in the INT register are used to mask events from generating interrupts. The mask settings affect
the nINT pin only and have no impact on the protection and monitor circuits themselves.
NOTE
Continuous event conditions such as an ISINK-enabled shutdown can cause the nINT pin
to be pulled low for an extended period of time, which can keep the host in a loop trying to
resolve the interrupt. If this behavior is not desired, set the corresponding mask bit after
receiving the interrupt and poll the INT register to determine when the event condition
resolves and the corresponding interrupt bit is cleared. Then the interrupt that caused the
nINT pin to stay low can be un-masked.
8.3.8 Analog Multiplexer
The TPS65217x device has an analog multiplexer (mux) that provides access to critical system voltages. The
voltages that can be measured by an ADC at the MUX_OUT pin are as follows:
• Battery voltage (VBAT)
• System voltage (VSYS)
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Feature Description (continued)
•
•
•
Temperature-sense voltage (VTS), and
VICHARGE, a voltage proportional to the charging current, and
MUX_IN, an external input pin to monitor an additional system voltage
In addition, one external input is available. The VBAT and VSYS voltages are divided by three (for example,
MUX_OUT = VBAT / 3) to be compatible with the input-voltage range of the ADC that resides on the system-host
side. The output of the MUX is buffered and can drive a maximum of 1-mA load current.
MUX_IN
VICH (Voltage proportional to charge current )
VTS (Thermistor voltage )
101
VSYS (System voltage )
010
-
011
VBAT (Battery sense voltage )
MUX_OUT
100
001
+
001/ 010
HiZ
000
2R
1R
MUX[2:0]
Figure 10. Analog Multiplexer
8.3.9 Battery Charger and Power Path
The TPS65217x device has a linear charger for Li+ batteries and a triple system-power path targeted at spacelimited portable applications. The power path lets simultaneous and independent charging of the battery and
powering of the system. This feature enables the system to run with a defective or absent battery pack and lets
instant system turnon even with a totally discharged battery. The input power source for charging the battery and
running the system can be either an AC adapter or a USB port. The power path prioritizes the AC input over the
USB input, and both over the battery input, to decrease the number of charge and discharge cycles on the
battery. Charging current is automatically decreased when the system load increases to the point where the AC
or USB power supply reach the maximum allowable current. If the AC or USB power supply cannot provide
enough current to the system, the battery supplies the additional current required and the battery will discharge
until the system load is reduced. Figure 11 shows a block diagram of the power path. Figure 12 shows an
example of the power path management function.
26
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Feature Description (continued)
BATDET
VBAT
1
4.1V
0
AC detect
AC
VSYS
ACSINK
AC_EN
AC_SINK
SWITCH CONTROL
VBAT
IAC[1:0]
USB detect
USB
USBSINK
USB_EN
USB_SINK
SWITCH CONTROL
BACKGATE
CONTROL
ISC
BAT
IUSB[1:0]
enable
BAT _SENSE
CHRGER
CONTROL
TS
CHG_EN
SUSP
RESET
ICHRG[1:0]
DPPMTH[1:0]
BATDET
TERMIF[1:0]
TERM
1.5V
VPRECHG
VCHRG[1:0]
TIMER
ACTIVE
BATTEMP
TSUSP
DPPM
TREG
TERMI
TMR_EN
TIMER[1:0]
DYN_TIMER
PCHRT
PCHGTOUT
CHGTOUT
Figure 11. Block Diagram of the Power Path and Battery Charger
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Feature Description (continued)
System load
1000mA
ISYS
700mA
Time
Charge current setting
500mA
IBAT
300mA
Time
IAC
1300mA current limit
1300mA
1200mA
Time
In this example, the AC input current limit is set to 1300 mA, battery charge current is 500 mA, and system load is
700 mA. As the system load increases to 1000 mA, the battery charging current is decreased to 300 mA to keep the
AC input current of 1300 mA.
Figure 12. Power Path Management
The detection thresholds for AC and USB inputs are a function of the battery voltage, and three basic use cases
must be considered: shorted or absent battery, dead battery, and good battery.
8.3.9.1 Shorted or Absent Battery (VBAT < 1.5 V)
The AC or USB inputs are valid and the device powers up if the AC or USB input voltage increases above 4.3 V.
After powering up, the input voltage can decrease to a value of VUVLO + VOFFSET (for example, 3.3 V + 200 mV)
before the device powers down.
The AC input is prioritized over the USB input; that is, if both inputs are valid, current is pulled from the AC input
and not the USB input. If both AC and USB supplies are available, the power-path switches to the USB input if
AC voltage decreases to less than 4.1 V (fixed threshold).
NOTE
The rise time of the AC and USB input voltage must be less than 50 ms for the detection
circuits to operate correctly. If the rise time is longer than 50 ms, the device may fail to
power up.
The linear charger periodically applies a 10-mA current source to the BAT pin to check for the presence of a
battery. This applied current causes the BAT pin to float up to more than 3 V, which may interfere with AC
removal detection and prevent switching from the AC to the USB input. For this reason, TI does not recommend
using both the AC and USB inputs when the battery is absent.
8.3.9.2 Dead Battery (1.5 V < VBAT < VUVLO)
Functionality for this case is the same as for the shorted battery case. The only difference is that after the AC
input is selected as the input, the power-path does not switch back to the USB input as AC input voltage
decreases to less than 4.1 V.
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Feature Description (continued)
8.3.9.3 Good Battery (VBAT > VUVLO)
The AC and USB supplies are detected when the input is 190 mV above the battery voltage, and are considered
absent when the voltage difference to the battery is less than 125 mV. This feature makes sure that the AC and
USB supplies are used whenever possible to save battery life. The USB and AC inputs are both current-limited
and controlled through the PPATH register.
In case AC or USB is not present or is blocked by the power path control logic (for example, in the OFF state),
the battery voltage always supplies the system (SYS pin).
8.3.9.4 AC and USB Input Discharge
The AC and USB inputs have 90-µA internal current sinks which are used to discharge the input pins to avoid
false detection of an input source. The AC sink is enabled when the USB input is a valid supply and the AC
voltage (VAC) is less than the detection threshold. Likewise, the USB sink is enabled when the AC input is a valid
supply and the USB voltage (VUSB) is less than the detection limit. Both current sinks can be forced OFF by
setting the ACSINK and USBSINK bits to 11b. Both bits are located in the PPATH register (address 0x01).
NOTE
Setting the ACSINK or USBSINK bit to 01b and 10b is not recommended as these
settings may cause unexpected enabling and disabling of the current sinks.
8.3.10 Battery Charging
When the charger is enabled (the CH_EN bit is set to 1b), it first checks for a short circuit on the BAT pin by
sourcing a small current and monitoring the BAT voltage. If the voltage on the BAT pin increases to more than
the BAT pin short-circuit detection threshold (VBAT(SC)), a battery is present and charging can start. The battery is
charged in three phases: precharge, constant-current fast charge (current regulation), and constant-voltage (CV)
charge (voltage regulation). In all charge phases, an internal control loop monitors the device junction
temperature and decreases the charge current if an internal temperature threshold is exceeded. Figure 13 shows
a typical charging profile. Figure 14 shows a modified charging profile.
PRE
CHARGE
CC FAST
CHARGE
CV
TAPER
DONE
VOREG
ICHRG [1:0]
Battery
Voltage
Battery
Current
VLOWV
IPRECHG
Termination
ITERM
Figure 13. Charging Profiles—Typical Charge Current Profile With Termination Enabled
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Feature Description (continued)
PRE
CHARGE
CC FAST
CHARGE
CV
TAPER
DONE
VOREG
ICHRG [1:0]
Battery
Voltage
Battery
Current
VLOWV
IPRECHG
Thermal
Regulation
Termination
ITERM
TJ(REG)
IC junction temperature TJ
Figure 14. Charging Profiles—Modified Charging Profile With Thermal Regulation Loop Active and
Termination Enabled
In the precharge phase, the battery is charged at the precharge current (IPRECHG), which is typically 10% of the
fast-charge current rate. The battery voltage starts rising. After the battery voltage crosses the precharge-to-fastcharge transition threshold (VLOWV), the battery is charged at the fast charge current (ICHG). The battery voltage
continues to rise. When the battery voltage reaches the battery charger voltage (VOREG), the battery is held at a
constant value of VOREG. The battery current now decreases as the battery approaches full charge. When the
battery current reaches the charge current for termination detection threshold (ITERM), the TERMI bit in the
CHGCONFIG0 register is set to 1b. To avoid false termination when the charger goes to either the dynamic
power path management (DPPM) loop or thermal loop, termination is disabled when either loop is active.
The charge current cannot exceed the input current limit of the power path minus the load current on the SYS pin
because the power-path manager decreases the charge current to support the system load if the input current
limit is exceeded. Whenever the nominal charge current is decreased by action of the power-path manger, the
DPPM loop, or the thermal loop, the safety timer is clocked with half the nominal frequency to extend the
charging time by a factor of 2.
8.3.11 Precharge
The precharge current is preset to a factor of 10% of the fast-charge current (ICHRG[1:0]) and cannot be
changed by the user.
8.3.12 Charge Termination
When the charging current decreases to less than the termination current threshold, the charger is turned off.
The value of the termination current threshold can be set in the CHGCONFIG3 register using the TERMIF[1:0]
bits. The termination current has a default setting of 7.5% of the ICHRG[1:0] setting.
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Feature Description (continued)
Charge termination is enabled by default and can be disabled by setting the TERM bit of the CHGCONFIG1
register to 1b. When termination is disabled, the device goes through the precharge, fast-charge, and CV
phases, then stays in the CV phase. The charger behaves like an LDO regulator with an output voltage equal to
the battery charger voltage (VOREG) and can source current up to the fast charge current (ICHG) or maximum input
current (IIN-MAX), whichever is less. Battery detection is not performed.
NOTE
The termination current threshold is not a tightly controlled parameter. Using the lowest
setting (2.5% of the nominal charge current) is not recommended because the minimum
termination current can be very close to 0. Any leakage on the battery side may cause the
termination not to trigger and charging to time out eventually.
8.3.13 Battery Detection and Recharge
Whenever the battery voltage decreases to less than the recharge detection threshold (VRCH), the sink current for
battery detection (IBAT(DET)) is pulled from the battery for the battery detection time (tDET) to determine if the
battery was removed. The voltage on the BAT pin staying above VLOWV voltage indicates that the battery is still
connected. If the charger is enabled (the CH_EN bit set to 1b), a new battery charging cycle starts.
When the BAT pin voltage is decreasing and less than the VLOWV voltage in the battery detection test, this
indicates that the battery was removed. The device then checks for battery insertion by turning on the charging
path and sources the IPRECHG current out of the BAT pin for the tDET time. Failure of the voltage to increase to
greater than the VRCH voltage indicates that a battery has been inserted, and a new charge cycle can start. If,
however, the voltage is already greater than the VRCH voltage, a fully charged battery was possibly inserted. To
check for this case, the IBAT(DET) current is pulled from the battery for the tDET time and if the voltage falls below
the VLOWV voltage, no battery is present. The battery detection cycle continues until the device detects a battery
or the charger is disabled.
When the battery is removed from the system, the charger also flags a BATTEMP error which indicates that the
TS input is not connected to a thermistor.
8.3.14 Safety Timer
The TPS65217x device hosts an internal safety timer for the precharge and fast-charge phases to help prevent
potential damage to either the battery or the system. The default fast-charge time can be changed in the
CHGCONFIG1 register and the precharge time can be changed in the CHGCONFIG3 register. The timer
functions can be disabled by resetting the TMR_EN bit of the CHGCONFIG1 register to 0b. Both timers are
disabled when the charge termination is disabled (the TERM bit is cleared to 0b).
8.3.14.1 Dynamic Timer Function
Under some circumstances, the charger current is decreased to ensure support when changes in the system
load or junction temperature occur. Two events can decrease the charging current. The first event is an increase
in the system load current, which causes the DPPM loop to decrease the available charging current. The second
event is when the junction temperature exceeds the temperature regulation limit (TJ(REG)), which causes the
device to go to thermal regulation.
In each of these events, the timer is clocked with half-frequency to extend the charger time by a factor of 2, and
charger termination is disabled. Normal operation starts again after the device junction temperature decreases to
less than (TJ(REG)) and the system load decreases to a level where enough current is available to charge the
battery at the desired charge rate. This feature is enabled by default and can be disabled by resetting the
DYNTMR bit in the CHGCONFIG2 register to 0b. Figure 14 shows a modified charge cycle with the thermal loop
active.
8.3.14.2 Timer Fault
A timer fault occurs if the battery voltage does not exceed the VLOWV voltage in the tPRECHG time during
precharging. A timer fault also occurs if the battery current does not reach the ITERM current in fast charge before
the safety timer expires. Fast-charge time is measured from the start of the fast-charge cycle.
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Feature Description (continued)
The fault status is indicated by the CHTOUT and PCHTOUT bits in the CHGCONFIG0 register. Time-out faults
are cleared and a new charge cycle is started when either the USB or AC supply is connected (rising edge of
VUSB or VAC), the charger RESET bit is set to 1b in the CHGCONFIG1 register, or the battery voltage decreases
to less than the recharge threshold (VRCH).
CH_EN = 0
CH_EN = 0 ||
BATTEMP = 1
OFF
ANY STATE
CH_EN = 0 &
BATTEMP = 0
YES
BATTERY
SHORTED?
NO
No FAULT
Timer frozen
Charging off
SUSPEND
PRECHARGE
TIMEOUT
RESTART
TEMP FAULT
V > VLOWV
TERM = 0
No FAULT
Timer frozen
Charging off
SUSPEND
FAST CHARGE
TIMEOUT
RESTART
TEMP FAULT
TERM = 1 &
TERMI = 1
TERM = 0 ||
Battery removed
WAIT FOR
RECHARGE
(1)
TEMP FAULT = Battery HOT || Battery cold || Thermal shutdown
(2)
RESTART = VUSB (↑) || VAC (↑) || Charger RESET bit (↑) || VBAT < VRCH
VBAT < VRCH &
Battery present
Figure 15. State Diagram of Battery Charger
8.3.15 Battery-Pack Temperature Monitoring
The TS pin of the TPS65217x device connects to the NTC resistor in the battery pack. During charging, if the
NTC resistance indicates that battery operation is less than or greater than the limits of normal operation,
charging is suspended and the safety timer value is paused and held at the present value. When the battery
pack temperature returns to within the limits of normal operation, charging resumes and the safety time is started
again without resetting.
By default, the device supports a 10-kΩ NTC resistor with a B-value of 3480. The NTC resistor is biased through
a 7.35-kΩ internal resistor connected to the BYPASS rail (2.25 V) and requires an external 75-kΩ resistor parallel
to the NTC resistor to linearize the temperature response curve.
The TPS65217x device supports two different temperature ranges for charging: 0°C to 45°C and 0°C to 60°C.
The temperature range is selected through the TRANGE bit in the CHCONFIG3 register.
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Feature Description (continued)
Charge Current
Charge Current
NOTE
The device can be configured to support a 100-kΩ NTC resistor (with a B-value of 3960)
by setting the NTC_TYPE bit to 1b in the CHGCONFIG1 register. However, TI does not
recommended this real-time manual configuration. In the SLEEP state, the charger
continues charging the battery, but all register values are reset to default values, in which
case the charger gets the wrong temperature information. If 100-kΩ NTC resistor support
is required, custom programming during production at the TI factory is required.
TRANGE = 0
ICHRG[1:0]
300 mA, 400 mA, 500 mA, 700 mA
TRANGE = 1
ICHRG[1:0]
300 mA, 400 mA, 500 mA, 700 mA
0
0
Temperature [C]
0° C
Temperature [C]
45°C
0° C
60°C
Figure 16. Charge Current as a Function of Battery Temperature
BYPASS
2.25 V
BIAS
10 µF
7.35 kW
62.5 kW
1
0
NTC_TYPE
TS
1.8 V
75 kW
VOPEN
10-kW NTC
1.66 V (0°C)
VLTF
NTC logic
TRANGE
0.86 V (45°C)
0
0.622 V (60°C)
1
VHTF
Figure 17. NTC Bias Circuit
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Feature Description (continued)
8.3.16 DC/DC Converters
8.3.16.1 Operation
The TPS65217x step-down converters typically operate with 2.25-MHz fixed-frequency pulse-width modulation
(PWM) at moderate-to-heavy load currents. At light load currents, the converter automatically goes to powersave mode and operates in pulse-frequency modulation (PFM).
During PWM operation, the converter uses a unique fast-response voltage-mode controller scheme with inputvoltage feed-forward to achieve good line and load regulation. This controller scheme allows the use of small
ceramic input and output capacitors. At the start of each clock cycle, the high-side MOSFET is turned on. The
current flows from the input capacitor through the high-side MOSFET through the inductor to the output capacitor
and load. During this phase, the current ramps up until the PWM comparator trips and the control logic turns off
the switch. The current-limit comparator also turns off the switch in case the current limit of the high-side
MOSFET switch is exceeded. After a dead time to prevent shoot-through current, the low-side MOSFET rectifier
is turned on and the inductor current ramps down. The direction of current flow is now from the inductor to the
output capacitor and to the load. The current returns back to the inductor through the low-side MOSFET rectifier.
The next cycle turns off the low-side MOSFET rectifier and turns on the on the high-side MOSFET.
The DC/DC converters operate in synchronization with each other, with converter 1 as the master. A 120° phase
shift between DCDC1 and DCDC2 and between DCDC2 and DCDC3 decreases the combined input root mean
square (RMS) current at the VIN_DCDCx pins. Therefore, smaller input capacitors can be used.
8.3.16.2 Output Voltage Setting
The setpoint of the output voltage for the DC/DC converters is determined in one of two different ways. The first
way is as a fixed-voltage converter where the voltage is defined in the DEFDCDCx register. The second way is
an external resistor network. Set the XADJx bit in the DEFDCDCx register and use Equation 1 to calculate the
output voltage.
æ
R ö
VOUT = VREF ´ ç 1 + 1 ÷
è R2 ø
where
•
VREF is the feedback voltage of 0.6 V
(1)
TI recommends selecting values to keep the combined resistance of the R1 and R2 resistors less than 1 MΩ.
Shield the VDCDC1, VDCDC2, and VDCDC3 lines from switching nodes and from the L1, L2, and L3 inductors
to prevent coupling of noise into the feedback pins.
L3
to system
VDCDC3
L3
VDCDC3
10 μF
DCDC1, DCDC2, and DCDC3 offer two
methods to adjust the output voltage.
to system
10 μF
DCDC1, DCDC2, and DCDC3 offer two
methods to adjust the output voltage.
Figure 18. Example for DCDC3—Fixed-Voltage
Options Programmable Through I2C (XADJ3 = 0b,
default)
Figure 19. Example for DCDC3—Voltage is Set by
External Feedback Resistor Network (XADJ3 = 1b)
8.3.16.3 Power-Save Mode and Pulse-Frequency Modulation (PFM)
By default, all three DC/DC converters go to pulse-frequency modulation (PFM) mode at light loads, and fixedfrequency pulse-width modulation (PWM) mode at heavy loads. In some applications, forcing PWM operation
even at light loads is required, which is done by setting the PFM_ENx bits in the DEFSLEW registers to 1b
(default setting is 0b). In PFM mode, the converter skips switching cycles and operates with decreased frequency
with a minimum quiescent current to keep high efficiency. The converter positions the output voltage typically 1%
above the nominal output voltage. This voltage-positioning feature minimizes the voltage drop caused by a
sudden load step.
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The converters go from PWM to PFM mode after the inductor current in the low-side MOSFET switch becomes
0 A.
When the converters are in power-save mode, the output voltage is monitored with a PFM comparator. As the
output voltage decreases to less than the PFM comparator threshold of VOUT + 1%, the device starts a PFM
current pulse. Starting the pulse is done by turning on the high-side MOSFET and ramping up the inductor
current. Then the high-side MOSFET turns off and the low-side MOSFET switch turns on until the inductor
current becomes 0 A again.
The converter effectively delivers a current to the output capacitor and the load. If the load is less than the
delivered current, the output voltage rises. If the output voltage is equal to or greater than the PFM comparator
threshold, the device stops switching and goes to a sleep mode with a typical 15-µA current consumption. In
case the output voltage is still less than the PFM comparator threshold, additional PFM current pulses are
generated until the PFM comparator threshold is reached. The converter starts switching again after the output
voltage decreases to less than the PFM comparator threshold.
With one threshold comparator, the output-voltage ripple during PFM mode operation can be kept very small.
The ripple voltage depends on the PFM comparator delay, the size of the output capacitor, and the inductor
value. Increasing the value of the output capacitors, inductors, or both keeps the output ripple at a minimum.
The converter goes from PFM mode and goes to PWM mode the output current can no longer be supported in
PFM mode or if the output voltage decreases to less than a second threshold, called the PFM comparator-low
threshold. This PFM comparator-low threshold is set to a value of VOUT – 1% and enables a fast transition from
power-save mode to PWM mode during a load step.
The power-save mode can be disabled through the I2C interface for each of the step-down converters,
independently of each other. If the power-save mode is disabled, the converter then operates in fixed-PWM
mode.
8.3.16.4 Dynamic Voltage Positioning
This feature decreases the voltage undershoots and overshoots at load steps from light to heavy load and from
heavy to light load. This feature is active in power-save mode and provides more headroom for both the voltage
drop at a load step and the voltage increase at a load removal. This improves load-transient behavior. At light
loads in which the converter operates in PFM mode, the output voltage is regulated typically 1% greater than the
nominal value (VOUT). In case of a load transient from light load to heavy load, the output voltage drops until it
reaches the low threshold of the PFM comparator set to –1% less than the nominal value, and goes to PWM
mode. During a load removal from heavy load to light load, the voltage overshoot is low because of active
regulation turning on the low-side MOSFET.
Output Voltage
Voltage Positioning
VOUT + 1%
PFM Comp
VOUT (PWM)
VOUT – 1%
PFM Comp Low
Load Current
PWM MODE
PFM Mode
Figure 20. Dynamic Voltage Positioning in Power Save Mode
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8.3.16.5 100% Duty-Cycle Low-Dropout Operation
The converter starts to go to the 100% duty-cycle mode after the input voltage (VIN) comes close to the nominal
output voltage. To keep the output voltage steady, the high-side MOSFET is turned on 100% for one or more
cycles. As the VIN voltage decreases further, the high-side MOSFET is turned on completely. In this case, the
converter offers a low input-to-output voltage difference which is particularly useful in battery-powered
applications to achieve longest operation time by taking full advantage of the whole battery voltage range.
Use Equation 2 to calculate the minimum input voltage to keep regulation (VIN,MIN) which depends on the load
current and output voltage.
(
VIN, MIN = VOUT, MAX + I OUT, MAX ´ R DSON, MAX + R L
)
where
•
•
•
•
VOUT,MAX is the nominal output voltage plus the maximum output voltage tolerance.
IOUT,MAX the maximum output current plus the inductor ripple current.
RDSON,MAX is the maximum upper MOSFET switch RDSON resistance.
RL is the DC resistance of the inductor.
(2)
8.3.16.6 Short-Circuit Protection
High-side and low-side MOSFET switches are short-circuit protected. After the high-side MOSFET switch
reaches its current limit, it is turned off and the low-side MOSFET switch is turned on. The high-side MOSFET
switch can only turn on again after the current in the low-side MOSFET switch decreases to less than its current
limit.
8.3.16.7 Soft Start
The three step-down converters in the TPS65217x device have an internal soft-start circuit that controls the
ramp-up of the output voltage. The output voltage ramps up from 5% to 95% of its nominal value within 750 µs.
This ramp up limits the inrush current in the converter during start-up and prevents possible input voltage drops
when a battery or high-impedance power source is used. The soft-start circuit is enabled after the start-up time,
tStart, expires.
EN
95%
5%
VOUT
t Start
t RAMP
Figure 21. Output of the DC/DC Converters is Ramped Up Within 750 µs
8.3.17 Standby LDO Regulators (LDO1, LDO2)
The LDO1 and LDO2 regulators support up to 100 mA each, are internally current limited, and have a maximum
dropout voltage of 200 mV at the rated output current. In SLEEP mode, however, the output current is limited to
1 mA each. When disabled, both outputs are discharged to ground through a 430-Ω resistor.
The LDO1 regulator supports an output voltage range from 1 V to 1.8 V, which is controlled through the
DEFLDO1 register. The LDO2 regulator supports an output voltage range from 0.9 V to 1.5 V, and is controlled
through the DEFLDO2 register. By default, the LDO1 regulator is enabled immediately after a power-up event as
described in the PMIC States section and stays on in the SLEEP state to support system standby. Each LDO
regulator has low standby current of less than 15 µA (typical).
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The LDO2 regulator can be configured to track the output voltage of the DCDC3 converter (core voltage). When
the TRACK bit is set to 1b in the DEFLDO2 register, the output is determined by the DCDC3[5:0] bits of the
DEFDCDC3 register and the LDO2[5:0] bits of the DEFLDO2 register are ignored.
The LDO1 and LDO2 regulators can be controlled through STROBE 1 through 6, special STROBES 14 and 15,
or through the corresponding enable bits in the ENABLE register. By default, the LDO1 regulator is controlled by
STROBE 15, which keeps LDO1 on in the SLEEP state. The STROBE assignments can be changed by the user
while the device is in the ACTIVE state, but all register settings are reset to the default values when the device
goes to the SLEEP or OFF state. TI does not recommend real-time modification of the STROBE assignments of
the LDO1 or LDO2 regulator. For permanent changes to the default STROBE assignments, custom programming
during production at the TI factory is required.
8.3.18 Load Switches or LDO Regulators (LS1 or LDO3, LS2 or LDO4)
The TPS65217x device has two general-purpose load switches that can also be configured as LDOs. As LDOs,
they support up to 200 mA (TPS65217B) or 400 mA (TPS65217C and TPS65217D) each, are internally currentlimited, and have a maximum dropout voltage of 200 mV at rated output current. These two outputs are
configured as LS1 and LS2 load switched in the TPS65217A variant of the device. The on-off state of the load
switches (LS1 and LS2) or the LDO regulators (LDO3 and LDO4) is controlled either through the sequencer or
the LS1_EN and LS2_EN bits of the ENABLE register. When disabled, both outputs are discharged to ground
through a 375-Ω resistor.
Configured as load switches, LS1 and LS2 have a maximum impedance of 650 mΩ. Different from LDO
operation, load switches can stay in current limit indefinitely without affecting the internal power-good signal or
affecting the other rails.
NOTE
Excessive power dissipation in the switches may cause thermal shutdown of the device.
Load switch and LDO modes are controlled by the LS1LDO3 and LS2LDO4 bits of the DEFLS1 and DEFLS2
registers.
8.3.19 White LED Driver
The TPS65217x device has a boost converter and two current sinks capable of driving two strings containing up
to 10 LEDs in each string (also known as a 2 × 10 matrix) LEDs at 25 mA or one string of up to 10 LEDs at 50
mA of current. Use Equation 3 to calculate the current of each current sink.
1.24 V
ILED = 1048 ´
R SET
(3)
Two different current levels can be programmed using two external RSET resistors. Only one current setting is
active at any given time, and both current sinks are always regulated to the same current. The active current
setting is selected through the ISEL bit of the WLEDCTRL1 register.
An internal PWM signal and I2C control support brightness and dimming. Both current sources are controlled
together and cannot operate independently. By default, the PWM frequency is set to 200 Hz, but can be changed
to 100 Hz, 500 Hz, or 1000 Hz. The PWM duty cycle can be adjusted from 1% (default) to 100% in 1% steps
through the WLEDCTRL2 register.
When the ISINK_EN bit of WLEDCTRL1 register is set to 1b, both current sinks are enabled, and the boost
output voltage at the FB_WLED pin is regulated to support the same sink current through each current sink. The
boost output voltage, however, is internally limited to 39 V.
If only one WLED string is required, short the ISINK1 and ISINK2 pins together and connect them to the cathode
of the diode string. In this case, the LED current two times the sink current. Figure 22 shows the basic schematic
and internal circuitry of the WLED driver used to drive two strings. Figure 23 shows the basic schematic and
internal circuitry of the WLED driver used to one string. Table 33 and Table 34 list the recommended inductors
and output capacitors for the WLED boost converters.
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L4
BOOST
CONTROL
SYS
FB_WLED
4.7mF
ISINK1
ISINK2
DUTY[6:0]
FDIM[1:0]
PWM
generator
1
ISET1
ISET2
0
ISEL
R1
R2
Figure 22. Block Diagram of WLED Driver—Dual-String Operation
L4
BOOST
CONTROL
SYS
FB_WLED
4.7 μF
ISINK1
ISINK2
DUTY[6:0]
FDIM[1:0]
PWM
generator
ISET1
2xR1
0
ISET2
1
ISEL
2xR2
This operation has the same LED current as dual-string operation. For single-string operation, both ISINK pins are
shorted together and the RSET resistor values (R1 and R2) are doubled to halve the current that each ISINKx pin
pulls, resulting in the same current through the LEDs as in dual-string operation.
Figure 23. Block Diagram of WLED Driver—Single-String Operation
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8.4 Device Functional Modes
POWER
DOWN
DCDCx = OFF
WLED = OFF
LDOx
= OFF
I2C
= NO
PPATH = OFF(3)
CHRGR = OFF
Registers Æ default
PGOOD = low
LDO_PGOOD = low
BAT | USB | AC
OFF
PB_IN = 0 | USB = 1 | AC = 1
AC = 0 &
USB = 0 &
PB_IN = 1
WAIT
DEGLITCH
PB_IN = 0 for > 8 s
| nRESET = 0
Noise
DCDCx = OFF
WLED = OFF
LDOx
= OFF
PPATH = OFF (3)
CHRGR = OFF
I2C
= NO
PGOOD = low
LDO_PGOOD = low
WAIT MIN
OFF TIME1
(1 s)
55 ms done
PRE
OFF
PB_IN (;) | USB (9) | AC (9)
nRESET = 0
1 s done
POR
RESET
Registers Æ default
EEPROM
load done
DCDCx = OFF
WLED = OFF
LDOx = OFF
PPATH = OFF (3)
CHARGER = OFF
CHECK
FAULTS
WAIT MIN
OFF TIME3
(1 s)
Low power LDO
mode disabled
5-s timeout
WAIT
PWR_EN
PWR_EN = 1
UVLO | OTS
| PGOOD = 0
DCDCx = OFF
WLED = OFF
LDO1
= ON (4)
LDO2,3,4 = OFF
I2C
= YES
PPATH = ON
CHRGR = ON (1)
PGOOD = low
10 ms done
WAIT
10 ms
PB_IN = 0 (;) |
USB = 1 (9) | AC = 1 (9) |
PWR_EN = 1 | SEQUP(bit) = 1
SLEEP
MIN ON TIME
(5 s)
10 ms done
5 s done
ACTIVE
PWR_EN = 0
YES
DCDCx
WLED
LDOx
I2C
PPATH
CHRGR
= ON
= ON
= ON
= YES
= ON
(1)
= ON
OFF(bit) = 1?
DCDCx
= OFF (2)
WLED
= OFF
LDO1
= ON (4)
LDO2,3,4
= OFF (2)
I2C
= NO
PPATH
= ON (1)
CHRGR
= ON (1)
PGOOD
= low
Registers Æ default
WAIT
10 ms
Low power LDO
mode enabled
1 s done
NO
WAIT MIN
OFF TIME2
(1 s)
DCDCx = OFF (2)
WLED = OFF
LDO1
= ON (4)
LDO2,3,4 = OFF (2)
I2C
= NO
PPATH = ON (1)
(1)
CHRGR = ON
PGOOD = low
(1)
Only if USB or AC supply is present
(2)
Rails are powered-down as controlled by the sequencer in default EEPROM settings
(3)
Battery voltage always supplies the system (from BAT pin to SYS pin)
(4)
LDO1 is assigned to STROBE15 in default EEPROM settings and this special strobe is not controlled by the
sequencer. LDO1 can only source 1 mA in the SLEEP state
(5)
The 9-MHz oscillator is enabled only when WLED or DCDC or PPATH or CHARGER is enabled.
(6)
The charger, auto-discharge, PPATH, and 9-MHz oscillator are ON in the SLEEP state if AC or USB is present and
the charger is enabled and not fully charged.
(7)
Any USB = 1(↑) or AC = 1 (↑) event in the WAIT MIN OFF TIME2 state makes the device go from the SLEEP state
when the timer expires. Any USB = 1(↑) or AC = 1 (↑) event in the WAIT MIN OFF TIME3 state makes the device go
from the PRE-OFF state when the timer expires.
(8)
All user registers are reset to default values each time the device goes to the SLEEP state.
(9)
UVLO and OTS are monitored in all the states except the OFF, POR, and WAIT DEGLITCH states.
Figure 24. Global State Diagram
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Device Functional Modes (continued)
8.4.1 PMIC States
8.4.1.1 OFF State
In the OFF state, the PMIC is completely shut down with the exception of a few circuits to monitor the voltage on
the AC, USB, and PB_IN pins. All output power rails are turned off and the registers are reset to their default
values. The I2C communication interface is turned off. The lowest amount of power is used in this state. To exit
the OFF state, one of the following wake-up events must occur:
• The PB_IN pin is pulled low.
• The USB supply is connected (positive edge).
• The AC adapter is connected (positive edge).
To go to the OFF state, set the OFF bit in the STATUS register to 1b, and then pull the PWR_EN pin low. In
normal operation, the device can only go to the OFF state from the ACTIVE state. Whenever a fault occurs
during operation, such as thermal shutdown, power-good fail, undervoltage lockout, or a PWR_EN pin timeout,
all power rails are shut down and the device goes to the OFF state. The device stays in the OFF state until the
fault is removed then a new power-up event occurs.
8.4.1.2 ACTIVE State
This state is the typical mode of operation when the system is up and running. All DC/DC converters, LDO
regulators, load switches, the WLED driver, and the battery charger are operational and can be controlled
through the I2C interface.
After a wake-up event, the PMIC enables all rails not controlled by the sequencer and pulls the nWAKEUP pin
low to signal the event to the host processor. The device goes to the ACTIVE state only if the host asserts the
PWR_EN pin within 5 s after the wake-up event. Otherwise, the device goes to the OFF state. In the ACTIVE
state, the sequencer is triggered to automatically enable the remaining power rails. The nWAKEUP pin returns to
the Hi-Z state after the PWR_EN pin has been asserted. Figure 3 shows a timing diagram. The device can also
go directly to the ACTIVE state from the SLEEP state by pulling the PWR_EN pin high. For more information,
see the description of the SLEEP State.
The PWR_EN pin must be pulled low for the device to go from ACTIVE state.
8.4.1.3 SLEEP State
The SLEEP state is a low-power mode of operation intended to support system standby. Typically, all power rails
are turned off with the exception of the LDO1 rail, and the registers are reset to their default values. The LDO1
rail stays operational but can support only a limited amount of current (1 mA typical).
To go to the SLEEP state, set the OFF bit in the STATUS register to 0b (default), and then pull the PWR_EN pin
low. All power rails controlled by the power-down sequencer are shut down, and after 1 s the device goes to the
SLEEP state. If the LDO1 rail was enabled in the ACTIVE state, the LDO1 rail stays enabled in the SLEEP sate.
All rails not controlled by the power-down sequencer also keep state. The battery charger stays active for as long
as either the USB or AC supply is connected to the device. All register values are reset when the device goes to
the SLEEP state, including charger parameters.
The device goes to the ACTIVE state after detecting a wake-up event as described in the previous sections. In
addition, the device goes from the SLEEP to the ACTIVE state when the PWR_EN pin is pulled high. The system
host can go between the ACTIVE and SLEEP states by control of the PWR_EN pin only. This feature bypasses
the requirement for a wake-up event from an external source to occur.
40
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Device Functional Modes (continued)
8.4.1.4 RESET State
The TPS65217x device can be reset by either pulling the nRESET pin low or by holding the PB_IN pin low for
more than 8 s. All rails are shut down by the sequencer and all register values are reset to their default values.
Rails not controlled by the sequencer are shut down after the power-down sequencer is complete. The device
stays in the this state for as long as the reset pin is held low, and the nRESET pin must be high for the device to
go from the RESET state. However, the device stays in the RESET state for a minimum of 1 s before going back
to the ACTIVE state. As detailed in the description of the ACTIVE State, the PWR_EN pin must be asserted
within 5 s of the nWAKEUP pin going low for the device to go to the ACTIVE state. The RESET function powercycles the device and only shuts down the output rails temporarily. Resetting the device does put the device in
the OFF state.
If the PB_IN pin is kept low for an extended amount of time, the device continues to cycle between the ACTIVE
and RESET states, and goes to the RESET state after each 8-s time period.
8.5 Programming
8.5.1 I2C Bus Operation
The TPS65217x device hosts a slave I2C interface that is compliant with I2C standard 3.0 and supports data
rates up to 400 kbit/s and auto-increments addressing.
Slave Address + R/nW
Reg Address
S
A6 A5 A4 A3 A2 A1 A0
S
Start Condition
A
Acknowledge
A6 ... A0 Device Address
Read / not Write
P
Stop Condition
S7 ... S0 Sub-Address
R/nW
R/nW
A
S7 S6 S5 S4 S3 S2 S1 S0
Data
A
D7 D6 D5 D4 D3 D2 D1 D0
A
P
D7 ... D0 Data
Figure 25. Subaddress in I2C Transmission
The I2C bus is a communications link between a controller and a series of slave terminals. The link is established
using a two-wire bus consisting of a serial clock signal (SCL) and a serial data signal (SDA). The serial clock is
sourced from the controller in all cases, where the serial data line is bidirectional for data communication
between the controller and the slave terminals. Each device has an open-drain output to transmit data on the
serial data line. An external pullup resistor must be placed on the serial data line to pull the drain output high
during data transmission.
Data transmission is initiated with a start bit from the controller as shown in Figure 28. The start condition is
recognized when the SDA line goes from high to low during the high portion of the SCL signal. On reception of a
start bit, the device receives serial data on the SDA input and checks for valid address and control information. If
the appropriate group and address bits are set for the device, then the device issues an acknowledge (ACK)
pulse and prepares for the reception of subaddress data. Subaddress data is decoded and responded to
according to the Register Maps. Data transmission is completed by either the reception of a stop condition or the
reception of the data word sent to the device. A stop condition is recognized as a low-to-high transition of the
SDA input during the high portion of the SCL signal. All other transitions of the SDA line must occur during the
low portion of the SCL signal. An acknowledge is issued after the reception of a valid address, subaddress, and
data words. The I2C interface auto-sequences through the register addresses, so that multiple data words can be
sent for a given I2C transmission. For details, see Figure 26, Figure 27, and Figure 28.
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Programming (continued)
S
SLAVE ADDRESS
W A
REG ADDRESS
A
DATA REGADDR
DATA SUBADDR +n
A
DATA SUBADDR +n+1
A
Ā P
n bytes + ACK
From master to slave
R Read (high)
S Start
Ā Not Acknowlege
From slave to master
W Write (low)
P Stop
A Acknowlege
Figure 26. I2C Data Protocol—Master Writes Data To Slave
S
SLAVE ADDRESS
W A
REG ADDRESS
A S
SLAVE ADDRESS
R A
DATA REGADDR +n
A
DATA REGADDR
A
DATA REGADDR + n+1
Ā P
n bytes + ACK
From master to slave
R Read (high)
S Start
Ā Not Acknowlege
From slave to master
W Write (low)
P Stop
A Acknowlege
Figure 27. I2C Data Protocol—Master Reads Data from Slave
SDA
SCL
1-7
8
9
ADDRESS
R/W
ACK
1-7
8
9
1-7
8
9
S
START
P
DATA
ACK
DATA
ACK/
nACK
STOP
Figure 28. I2C Start-Stop-Acknowledge Protocol
42
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Programming (continued)
8.5.2 Password Protection
Registers 0x0B through 0x1F, with the exception of the password register, are protected against accidental
writing by an 8-bit password. The password must be written before writing to a protected register and is
automatically reset to 0x00 after the following I2C transaction, regardless of the register that was accessed and
regardless of the transaction type (read or write). The password is required for write access only and is not
required for read access.
8.5.2.1 Level1 Protection
To write to a Level1 protected register, follow these steps:
1. Write the address of the destination register, XORed with the protection password (0x7D) to the
PASSWORD register.
2. Write data to the password-protected register.
3. Data is only transferred to the protected register if the content of the PASSWORD register XORed with the
address sent in Step 2 matches 0x7D. Otherwise, the transaction is ignored. The PASSWORD register is
reset to 0x00 after the transaction regardless of whether the XOR logical function matched 0x7D or not.
The cycle must be repeated for any other register that is Level1 write protected.
8.5.2.2 Level2 Protection
To write to a Level2 protected register, follow these steps:
1. Write the address of the destination register, XORed with the protection password (0x7D) to the
PASSWORD register.
2. Write data to the password-protected register.
3. The data is temporarily stored if the content of the PASSWORD register XORed with the address sent in
Step 2 matches 0x7D. The register value does not change at this point, but the PASSWORD register is reset
to 0x00 after the transaction regardless of whether the XOR logical function matched 0x7D or not.
4. Write the address of the destination register, XORed with the protection password (0x7D) to the
PASSWORD register.
5. Write the same data as in Step 2 to the password protected register.
6. The content of the PASSWORD register is XORed again with the address sent in Step 5 must match 0x7D
for the data to be valid.
7. The register is updated only if both data transfers in Step 2 and Step 5 were valid, and the transferred data
matched.
NOTE
No other I2C transaction can occur between Step 2 and Step 5, and the register is not
updated if any other transaction occurs between Step 2 and Step 5. The cycle must be
repeated for any other register that is Level2 write protected.
8.5.3 Resetting of Registers to Default Values
All
•
•
•
•
•
registers are reset to default values when one or more of the following conditions occur:
The device goes from the ACTIVE state to the SLEEP state or OFF state.
The BAT or USB supply is applied from a power-less state (power-on reset).
The push-button input is pulled low for more than 8 s.
The nRESET pin is pulled low.
A fault occurs.
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8.6 Register Maps
8.6.1 Register Address Map
Figure 29 lists the memory-mapped registers for the device registers. All register offset addresses not listed in
should be considered as reserved locations and the register contents should not be modified.
Figure 29. Register Address Map
Address
(Decimal)
Address
(Hexadecimal)
Name
Password
Protection Level
Default
Value
0
0x00
CHIPID
None
X
Chip ID
Go
1
0x01
PPATH
None
0x3D
Power path control
Go
2
0x02
INT
None
0x80
Interrupt flags and masks
Go
3
0x03
CHGCONFIG0
None
0x00
Charger control register 0
Go
4
0x04
CHGCONFIG1
None
0xB1
Charger control register 1
Go
5
0x05
CHGCONFIG2
None
0x80
Charger control register 2
Go
6
0x06
CHGCONFIG3
None
0xB2
Charger control register 3
Go
7
0x07
WLEDCTRL1
None
0xB1
WLED control register
Go
8
0x08
WLEDCTRL2
None
0x00
WLED PWM duty cycle
Go
9
0x09
MUXCTRL
None
0x00
Analog multiplexer control register
Go
10
0x0A
STATUS
None
0x00
Status register
Go
11
0x0B
PASSWORD
None
0x00
Write password
Go
12
0x0C
PGOOD
None
0x00
Power good (PG) flags
Go
13
0x0D
DEFPG
Level1
0x0C
Power good (PG) delay
Go
14
0x0E
DEFDCDC1
Level2
X
DCDC1 voltage adjustment
Go
15
0x0F
DEFDCDC2
Level2
X
DCDC2 voltage adjustment
Go
16
0x10
DEFDCDC3
Level2
0x08
DCDC3 voltage adjustment
Go
Go
Description
Section
17
0x11
DEFSLEW
Level2
0x06
Slew control for DCDC1, DCDC2, DCDC3, and
PFM mode enable
18
0x12
DEFLDO1
Level2
0x09
LDO1 voltage adjustment
Go
19
0x13
DEFLDO2
Level2
0x38
LDO2 voltage adjustment
Go
20
0x14
DEFLS1
Level2
X
LS1 or LDO3 voltage adjustment
Go
21
0x15
DEFLS2
Level2
X
LS2 or LDO4 voltage adjustment
Go
22
0x16
ENABLE
Level1
0x00
Enable register
Go
23
0x18
DEFUVLO
Level1
0x03
UVLO control register
Go
24
0x19
SEQ1
Level1
X
Power-up STROBE definition
Go
25
0x1A
SEQ2
Level1
X
Power-up STROBE definition
Go
26
0x1B
SEQ3
Level1
X
Power-up STROBE definition
Go
27
0x1C
SEQ4
Level1
0x40
Power-up STROBE definition
Go
28
0x1D
SEQ5
Level1
X
Power-up delay times
Go
29
0x1E
SEQ6
Level1
0x00
Power-up delay times
Go
Bit access types are abbreviated to fit into small table cells. Table 1 shows the abbreviation codes that are used
for access types in this section. Registers that are different for each TPS65217x variant will have different
hexadecimal reset values and are shown as X. The hexadecimal reset value can de determined by converting
the binary reset value.
Table 1. Access Type Codes
Access Type
Code
Description
Read
R
Read-only
Read/Write
R/W
Read and Write
(1)
44
(1)
Reserved bits can be R or R/W. Read-only (R) Reserved bits are not used and writing data to these
bits will have no effect on device operation. Read and Write (R/W) Reserved bits are settings that
cannot be modified. The reset value must always be written to these bits. Modifying a R/W Reserved
bit will have an impact on device operation and can produce unwanted device behavior.
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8.6.2 Chip ID Register (CHIPID) (Address = 0x00) [reset = X]
CHIPID is shown in Figure 30 and described in Table 2.
Return to Summary Table.
Figure 30. CHIPID Register
DATA BIT
FIELD NAME
READ/WRITE
TPS65217A
TPS65217B
RESET
VALUE
TPS65217C
TPS65217D
7
6
5
4
3
2
CHIP[3:0]
R
0b
1b
1b
0b
R
1b
1b
1b
1b
1
0
R
1b
1b
1b
1b
R
0b
0b
0b
0b
REV[3:0]
R
1b
1b
1b
1b
R
1b
1b
0b
0b
R
0b
0b
0b
0b
R
0b
0b
0b
0b
Table 2. CHIPID Register Field Descriptions
Bit
Field
Type
Reset
Description
7–4
CHIP[3:0]
R
TPS65217A: 0111b
TPS65217B: 1111b
TPS65217C: 1110b
TPS65217D: 0110b
Chip ID
0000b = Future use
0001b = Future use
0110b = TPS65217D
0111b = TPS65217A
1000b = Future use
1001b to 1101b = Reserved
1110b = TPS65217C
1111b = TPS65217B
3–0
REV[3:0]
R
0010b
Revision code
0000b = revision 1.0
0001b = revision 1.1
0010b = revision 1.2
0011b to 1110b = Reserved
1111b = Future use
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8.6.3 Power Path Control Register (PPATH) (Address = 0x01) [reset = 0x3D]
PPATH is shown in Figure 31 and described in Table 3.
Return to Summary Table.
Figure 31. PPATH Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
ACSINK
R/W
0b
6
USBSINK
R/W
0b
5
AC_EN
R/W
1b
4
USB_EN
R/W
1b
3
2
IAC[1:0]
R/W
1b
R/W
1b
1
0
IUSB[1:0]
R/W
R/W
0b
1b
Table 3. PPATH Register Field Descriptions
Bit
7
Field
ACSINK
Type
R/W
Reset
0b
Description
AC current-sink control
NOTE: [ACSINK, USBSINK] = 01b and 10b combinations are
not recommended, as these may lead to unexpected enabling
and disabling of the current sinks.
0b = AC sink is enabled when USB is a valid supply and VAC is
less than the detection threshold
1b = Set ACSINK and USBSINK to 1b at the same time to force
both (AC and USB) current sinks OFF
6
USBSINK
R/W
1b
USB current-sink control
NOTE: [ACSINK, USBSINK] = 01b and 10b combinations are
not recommended, as these may lead to unexpected enabling
and disabling of the current sinks.
0b = USB sink is enabled when AC is a valid supply and VUSB is
less than the detection threshold
1b = Set ACSINK and USBSINK to 1b at the same time to force
both (AC and USB) current sinks OFF
5
AC_EN
R/W
1b
AC power path enable
0b = AC power input is turned off.
1b = AC power input is turned on.
4
USB_EN
R/W
1b
USB power path enable
0b = USB power input is turned off (USB suspend mode).
1b = USB power input is turned on.
3–2
IAC[1:0]
R/W
11b
AC input-current limit
00b = 100 mA
01b = 500 mA
10b = 1300 mA
11b = 2500 mA
1–0
IUSB[1:0]
R/W
01b
USB input-current limit
00b = 100 mA
01b = 500 mA
10b = 1300 mA
11b = 1800 mA
46
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8.6.4 Interrupt Register (INT) (Address = 0x02) [reset = 0x80]
INT is shown in Figure 32 and described in Table 4.
Return to Summary Table.
Figure 32. INT Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
Reserved
R/W
1b
6
PBM
R/W
0b
5
ACM
R/W
0b
4
USBM
R/W
0b
3
Reserved
R
0b
2
PBI
R
0b
1
ACI
R
0b
0
USBI
R
0b
Table 4. INT Register Field Descriptions
Bit
Field
Type
Reset
Description
7
Reserved
R/W
1b
This bit is reserved
6
PBM
R/W
0b
Push-button status change interrupt mask
0b = Interrupt is issued when PB status changes.
1b = No interrupt is issued when PB status changes.
5
ACM
R/W
0b
AC interrupt mask
0b = Interrupt is issued when power to the AC input is applied or
removed.
1b = No interrupt is issued when power to the AC input is
applied or removed.
4
USBM
R/W
0b
USB power status change interrupt mask
0b = Interrupt is issued when power to USB input is applied or
removed.
1b = No interrupt is issued when power to USB input is applied
or removed.
3
Reserved
R
0b
This bit is reserved
2
PBI
R
0b
Push-button status change interrupt
NOTE: Status information is available in the STATUS register.
0b = No change in status
1b = Push-button status change (PB_IN changed high to low or
low to high)
1
ACI
R
0b
AC power status change interrupt
NOTE: Status information is available in the STATUS register.
0b = No change in status
1b = AC power status change (power to the AC pin has either
been applied or removed)
0
USBI
R
0b
USB power status change interrupt
NOTE: Status information is available in the STATUS register.
0b = No change in status
1b = USB power status change (power to the USB pin has either
been applied or removed)
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8.6.5 Charger Configuration Register 0 (CHGCONFIG0) (Address = 0x03) [reset = 0x00]
CHGCONFIG0 is shown in Figure 33 and described in Table 5.
Return to Summary Table.
Figure 33. CHGCONFIG0 Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
TREG
R
0b
6
DPPM
R
0b
5
TSUSP
R
0b
4
TERMI
R
0b
3
ACTIVE
R
0b
2
CHGTOUT
R
0b
1
0
PCHGTOUT BATTEMP
R
R
0b
0b
Table 5. CHGCONFIG0 Register Field Descriptions
Bit
7
Field
TREG
Type
R
Reset
0b
Description
Thermal regulation
0b = Charger is in normal operation.
1b = Charge current is reduced because of high chip
temperature.
6
DPPM
R
0b
DPPM active
0b = DPPM loop is not active.
1b = DPPM loop is active; charge current is reduced to support
the load with the current required.
5
TSUSP
R
0b
Thermal suspend
0b = Charging is allowed.
1b = Charging is temporarily suspended because battery
temperature is out of range.
4
TERMI
R
0b
Termination current detect
0b = Charging, charge termination current threshold has not
been crossed.
1b = Charge termination current threshold has been crossed and
charging has been stopped. This can be from a battery reaching
full capacity or to a battery removal condition.
3
ACTIVE
R
0b
Charger active bit
0b = Charger is not charging.
1b = Charger is charging (DPPM or thermal regulation may be
active).
2
CHGTOUT
R
0b
Charge timer time-out
0b = Charging, timers did not time out.
1b = One of the timers has timed out and charging has been
terminated.
1
PCHGTOUT
R
0b
Precharge timer time-out
0b = Charging, precharge timer did not time out.
1b = Precharge timer has timed out and charging has been
terminated.
0
BATTEMP
R
0b
Battery temperature and NTC error
NOTE: This bit does not indicate that the battery temperature is
within the valid range for charging.
0b = Battery temperature is in the allowed range for charging.
1b = No temperature sensor detected or battery temperature
outside valid charging range
48
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8.6.6 Charger Configuration Register 1 (CHGCONFIG1) (Address = 0x04) [reset = 0xB1]
CHGCONFIG1 is shown in Figure 34 and described in Table 6.
Return to Summary Table.
Figure 34. CHGCONFIG1 Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
6
TIMER[1:0]
R/W
R/W
1b
0b
5
TMR_EN
R/W
1b
4
NTC_TYPE
R/W
1b
3
RESET
R/W
0b
2
TERM
R/W
0b
1
SUSP
R/W
0b
0
CHG_EN
R/W
1b
Table 6. CHGCONFIG1 Register Field Descriptions
Bit
7–6
Field
TIMER[1:0]
Type
R/W
Reset
10b
Description
Charge safety timer setting (fast-charge timer)
00b = 4h
01b = 5h
10b = 6h
11b = 8h
5
TMR_EN
R/W
1b
Safety timer enable
0b = Precharge timer and fast charge timer are disabled.
1b = Precharge timer and fast charge time are enabled.
4
NTC_TYPE
R/W
1b
NTC type (for battery temperature measurement)
0b = 100k (curve 1, B = 3960)
1b = 10k (curve 2, B = 3480)
3
RESET
R/W
0b
Charger reset
0b = Inactive
1b = Reset active. This bit must be set and then reset via the
serial interface to restart the charge algorithm.
2
TERM
R/W
0b
Charge termination on-off
0b = Charge termination enabled, based on timers and
termination current
1b = Current-based charge termination does not occur and the
charger is always on
1
SUSP
R/W
0b
Suspend charge
0b = Safety timer and precharge timers are not suspended.
1b = Safety timer and precharge timers are suspended.
0
CHG_EN
R/W
1b
Charger enable
0b = Charger is disabled.
1b = Charger is enabled.
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8.6.7 Charger Configuration Register 2 (CHGCONFIG2) (Address = 0x05) [reset = 0x80]
CHGCONFIG2 is shown in Figure 35 and described in Table 7.
Return to Summary Table.
Figure 35. CHGCONFIG2 Register
DATA BIT
7
6
FIELD NAME
DYNTMR
VPRECHG
5
4
READ/WRITE
R/W
R/W
R/W
RESET VALUE
1b
0b
0b
3
2
1
0
Reserved
Reserved
Reserved
Reserved
R/W
R/W
R/W
R/W
R/W
0b
0b
0b
0b
0b
VOREG[1:0]
Table 7. CHGCONFIG2 Register Field Descriptions
Bit
7
Field
DYNTMR
Type
R/W
Reset
1b
Description
Dynamic timer function
0b = Safety timers run with their nominal clock speed.
1b = Clock speed is divided by 2 if thermal loop or DPPM loop is
active.
6
VPRECHG
R/W
0b
Precharge voltage
0b = Precharge to fast-charge transition voltage is 2.9 V.
1b = Precharge to fast-charge transition voltage is 2.5 V.
5–4
VOREG[1:0]
R/W
00b
Charge voltage selection
00b = 4.1 V
01b = 4.15 V
10b = 4.2 V
11b = 4.2 V
3–0
50
Reserved
R/W
0000b
These bits are reserved
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8.6.8 Charger Configuration Register 3 (CHGCONFIG3) (Address = 0x06) [reset = 0xB2]
CHGCONFIG3 is shown in Figure 36 and described in Table 8.
Return to Summary Table.
Figure 36. CHGCONFIG3 Register
DATA BIT
7
FIELD NAME
6
5
ICHRG[1:0]
4
DPPMTH[1:0]
3
2
PCHRGT
1
TERMIF[1:0]
0
TRANGE
READ/WRITE
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
RESET VALUE
1b
0b
1b
1b
0b
0b
1b
0b
Table 8. CHGCONFIG3 Register Field Descriptions
Bit
7–6
Field
ICHRG[1:0]
Type
R/W
Reset
10b
Description
Charge current setting
00b = 300 mA
01b = 400 mA
10b = 500 mA
11b = 700 mA
5–4
DPPMTH[1:0]
R/W
11b
Power path DPPM threshold
00b = 3.5 V
01b = 3.75 V
10b = 4 V
11b = 4.25 V
3
PCHRGT
R/W
0b
Precharge time
0b = 30 min
1b = 60 min
2–1
TERMIF[1:0]
R/W
01b
Termination current factor
NOTE: Termination current = TERMIF x ICHRG
00b = 2.5%
01b = 7.5%
10b = 15%
11b = 18%
0
TRANGE
R/W
0b
Temperature range for charging
0b = 0°C to 45°C
1b = 0°C to 60°C
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8.6.9 WLED Control Register 1 (WLEDCTRL1) (Address = 0x07) [reset = 0xB1]
WLEDCTRL1 is shown in Figure 37 and described in Table 9.
Return to Summary Table.
Figure 37. WLEDCTRL1 Register
DATA BIT
7
6
5
4
3
2
FIELD NAME
Reserved
Reserved
Reserved
Reserved
ISINK_EN
ISEL
1
0
FDIM[1:0]
READ/WRITE
R
R
R
R
R/W
R/W
R/W
R/W
RESET VALUE
0b
0b
0b
0b
0b
0b
0b
1b
Table 9. WLEDCTRL1 Register Field Descriptions
Bit
Field
Type
Reset
Description
7–4
Reserved
R
0000b
These bits are reserved
3
ISINK_EN
R/W
0b
Current sink enable
NOTE: This bit enables both current sinks.
0b = Current sink is disabled (OFF).
1b = Current sink is enabled (ON).
2
ISEL
R/W
0b
ISET selection bit
0b = Low-level (define by ISET1 pin)
1b = High-level (defined by ISET2 pin)
1–0
FDIM[1:0]
R/W
01b
PWM dimming frequency
00b = 100 Hz
01b = 200 Hz
10b = 500 Hz
11b = 1000 Hz
8.6.10 WLED Control Register 2 (WLEDCTRL2) (Address = 0x08) [reset = 0x00]
WLEDCTRL2 is shown in Figure 38 and described in Table 10.
Return to Summary Table.
Figure 38. WLEDCTRL2 Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
Reserved
R
0b
6
5
4
R/W
0b
R/W
0b
R/W
0b
3
DUTY[6:0]
R/W
0b
2
1
0
R/W
0b
R/W
0b
R/W
0b
Table 10. WLEDCTRL2 Register Field Descriptions
Bit
Field
Type
Reset
Description
7
Reserved
R
0b
This bit is reserved
6–0
DUTY[6:0]
R/W
0000000b
PWM dimming duty cycle
000 0000b = 1%
000 0001b = 2%
...
110 0010b = 99%
110 0011b = 100%
110 0100b = 0%
...
111 1110b = 0%
111 1111b = 0%
52
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8.6.11 MUX Control Register (MUXCTRL) (Address = 0x09) [reset = 0x00]
MUXCTRL is shown in Figure 39 and described in Table 11.
Return to Summary Table.
Figure 39. MUXCTRL Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
Reserved
R
0b
6
Reserved
R
0b
5
Reserved
R
0b
4
Reserved
R
0b
3
Reserved
R
0b
2
R/W
0b
1
MUX[2:0]
R/W
0b
0
R/W
0b
1
Reserved
R
0b
0
PB
R
0b
Table 11. MUXCTRL Register Field Descriptions
Bit
Field
Type
Reset
Description
7–3
Reserved
R
00000b
These bits are reserved
2–0
MUX[2:0]
R/W
000b
Analog multiplexer selection
000b = MUX is disabled, output is Hi-Z.
001b = VBAT
010b = VSYS
011b = VTS
100b = VICHARGE
101b = MUX_IN (external input)
110b = MUX is disabled, output is Hi-Z.
111b = MUX is disabled, output is Hi-Z.
8.6.12 Status Register (STATUS) (Address = 0x0A) [reset = 0x00]
STATUS is shown in Figure 40 and described in Table 12.
Return to Summary Table.
Figure 40. STATUS Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
OFF
R/W
0b
6
Reserved
R
0b
5
Reserved
R
0b
4
Reserved
R
0b
3
ACPWR
R
0b
2
USBPWR
R
0b
Table 12. STATUS Register Field Descriptions
Bit
7
Field
Type
Reset
Description
OFF
R/W
0b
OFF bit. Set this bit to 1b to enter the OFF state when PWR_EN
pin is pulled low. The bit is automatically reset to 0b.
6–4
Reserved
R
000b
These bits are reserved
3
ACPWR
R
0b
AC power status bit
0b = AC power is not present and/or not in the range valid for
charging.
1b = AC source is present and in the range valid for charging.
2
USBPWR
R
0b
USB power
0b = USB power is not present and/or not in the range valid for
charging.
1b = USB source is present and in the range valid for charging.
1
Reserved
R
0b
This bit is reserved
0
PB
R
0b
Push Button status bit
0b = Push-button is inactive (PB_IN is pulled high).
1b = Push-button is active (PB_IN is pulled low).
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8.6.13 Password Register (PASSWORD) (Address = 0x0B) [reset = 0x00]
PASSWORD is shown in Figure 41 and described in Table 13.
Return to Summary Table.
Figure 41. PASSWORD Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
6
5
R/W
0b
R/W
0b
R/W
0b
4
3
PWRD[7:0]
R/W
R/W
0b
0b
2
1
0
R/W
0b
R/W
0b
R/W
0b
Table 13. Password Register (PASSWORD) Field Descriptions
Bit
7–0
Field
PWRD[7:0]
Type
R/W
Reset
00000000b
Description
Password protection locking and unlocking
NOTE: Register is automatically reset to 0x00 after the following I2C
transaction. See the Password Protection section for details.
0000 0000b = Password-protected registers are locked for write access.
...
0111 1100b = Password-protected registers are locked for write access.
0111 1101b = Allows writing to a password-protected register in the next
write cycle
0111 1110b = Password-protected registers are locked for write access.
...
1111 1111b = Password-protected registers are locked for write access.
54
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8.6.14 Power Good Register (PGOOD) (Address = 0x0C) [reset = 0x00]
PGOOD is shown in Figure 42 and described in Table 14.
Return to Summary Table.
Figure 42. PGOOD Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
Reserved
R
0b
6
LDO3_PG
R
0b
5
LDO4_PG
R
0b
4
DC1_PG
R
0b
3
DC2_PG
R
0b
2
DC3_PG
R
0b
1
LDO1_PG
R
0b
0
LDO2_PG
R
0b
Table 14. PGOOD Register Field Descriptions
Bit
Field
Type
Reset
Description
7
Reserved
R
0b
This bit is reserved
6
LDO3_PG
R
0b
LDO3 power-good
0b = LDO is either disabled or not in regulation.
1b = LDO is in regulation or LS1 or LDO3 is configured as a
switch.
5
LDO4_PG
R
0b
LDO4 power-good
0b = LDO is either disabled or not in regulation
1b = LDO is in regulation or LS2 or LDO4 is configured as a
switch.
4
DC1_PG
R
0b
DCDC1 power-good
0b = DCDC1 is either disabled or not in regulation.
1b = DCDC1 is in regulation.
3
DC2_PG
R
0b
DCDC2 power-good
0b = DCDC2 is either disabled or not in regulation.
1b = DCDC2 is in regulation.
2
DC3_PG
R
0b
DCDC3 power-good
0b = DCDC3 is either disabled or not in regulation.
1b = DCDC3 is in regulation.
1
LDO1_PG
R
0b
LDO1 power-good.
0b = LDO is either disabled or not in regulation
1b = LDO is in regulation
0
LDO2_PG
R
0b
LDO2 power-good
0b = LDO is either disabled or not in regulation
1b = LDO is in regulation
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8.6.15 Power-Good Control Register (DEFPG) (Address = 0x0D) [reset = 0x0C]
DEFPG is shown in Figure 43 and described in Table 15.
Return to Summary Table.
This register is password protected.
Figure 43. DEFPG Register
DATA BIT
7
6
5
4
3
2
FIELD NAME
Reserved
Reserved
Reserved
Reserved
LDO1PGM
LDO2PGM
1
0
PGDLY[1:0]
READ/WRITE
R
R
R
R
R/W
R/W
R/W
R/W
RESET VALUE
0b
0b
0b
0b
1b
1b
0b
0b
Table 15. DEFPG Register Field Descriptions
Bit
7–4
3
Field
Type
Reset
Description
Reserved
R
0000b
These bits are reserved
LDO1PGM
R/W
1b
LDO1 power-good masking bit
0b = PGOOD pin is pulled low if LDO1_PG is low
1b = LDO1_PG status does not affect the status of the PGOOD
output pin.
2
LDO2PGM
R/W
1b
LDO2 power-good masking bit
0b = PGOOD pin is pulled low if LDO2_PG is low
1b = LDO2_PG status does not affect the status of the PGOOD
output pin.
1–0
PGDLY[1:0]
R/W
00b
Power-good delay
NOTE: PGDLY applies to the PGOOD pin.
00b = 20 ms
01b = 100 ms
10b = 200 ms
11b = 400 ms
56
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8.6.16 DCDC1 Control Register (DEFDCDC1) (Address = 0x0E) [reset = X]
DEFDCDC1 is shown in Figure 44 and described in Table 16.
Return to Summary Table.
This register is password protected.
Figure 44. DEFDCDC1 Register
DATA BIT
FIELD NAME
READ/WRITE
TPS65217A
TPS65217B
RESET
VALUE
TPS65217C
TPS65217D
7
XADJ1
R/W
0b
0b
0b
0b
6
Reserved
R
0b
0b
0b
0b
5
4
R/W
0b
0b
0b
0b
R/W
1b
1b
1b
1b
3
2
DCDC1[5:0]
R/W
R/W
1b
1b
1b
1b
1b
0b
0b
0b
1
0
R/W
1b
1b
0b
1b
R/W
0b
0b
0b
0b
Table 16. DEFDCDC1 Register Field Descriptions
Bit
7
Field
XADJ1
Type
R/W
Reset
0b
Description
DCDC1 voltage adjustment option
0b = Output voltage is adjusted through the register setting.
1b = Output voltage is externally adjusted.
6
5–0
Reserved
R
DCDC1[5:0] R/W
0b
This bit is reserved
TPS65217A: 01
1110b
TPS65217B: 01
1110b
TPS65217C: 01
1000b
TPS65217D: 01
0010b
DCDC1 output-voltage setting
00 0000b = 0.9 V
01 0000b = 1.3 V
10 0000b = 1.9 V
00 0001b = 0.925 01 0001b = 1.325 10 0001b = 1.95 V
V
V
10 0010b = 2 V
00 0010b = 0.95 V 01 0010b = 1.35 V 10 0011b = 2.05 V
00 0011b = 0.975 01 0011b = 1.375 10 0100b = 2.1 V
V
V
10 0101b = 2.15 V
00 0100b = 1 V
01 0100b = 1.4 V
10 0110b = 2.2 V
00 0101b = 1.025 01 0101b = 1.425
10 0111b = 2.25 V
V
V
00 0110b = 1.05 V 01 0110b = 1.45 V 10 1000b = 2.3 V
00
V
00
00
V
0111b = 1.075 01 0111b = 1.475 10 1001b = 2.35 V
V
10 1010b = 2.4 V
1000b = 1.1 V
01 1000b = 1.5 V
10 1011b = 2.45 V
1001b = 1.125 01 1001b = 1.55 V 10 1100b = 2.5 V
00 1010b = 1.15 V
11 0000b = 2.7 V
11 0001b = 2.75 V
11 0010b = 2.8 V
11 0011b = 2.85 V
11 0100b = 2.9 V
11 0101b = 3 V
11 0110b = 3.1 V
11 0111b = 3.2 V
11 1000b = 3.3 V
11 1001b = 3.3 V
11 1010b = 3.3 V
11 1011b = 3.3 V
11 1100b = 3.3 V
01 1010b = 1.6 V
10 1101b = 2.55 V
11 1101b = 3.3 V
01 1011b = 1.65 V
10 1110b = 2.6 V
11 1110b = 3.3 V
10 1111b = 2.65 V
11 1111b = 3.3 V
00 1011b = 1.175 01
V
01
00 1100b = 1.2V
01
00 1101b = 1.225
01
V
1100b = 1.7 V
1101b = 1.75 V
1110b = 1.80V
1111b = 1.85 V
00 1110b = 1.25 V
00 1111b = 1.275
V
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8.6.17 DCDC2 Control Register (DEFDCDC2) (Address = 0x0F) [reset = X]
DEFDCDC2 is shown in Figure 45 and described in Table 17.
Return to Summary Table.
This register is password protected.
Figure 45. DEFDCDC2 Register
DATA BIT
FIELD NAME
READ/WRITE
TPS65217A
TPS65217B
RESET
VALUE
TPS65217C
TPS65217D
7
XADJ2
R/W
0b
0b
0b
0b
6
Reserved
R
0b
0b
0b
0b
5
4
R/W
1b
0b
0b
0b
R/W
1b
0b
0b
0b
3
2
DCDC2[5:0]
R/W
R/W
1b
0b
1b
0b
1b
0b
1b
0b
1
0
R/W
0b
0b
0b
0b
R/W
0b
0b
0b
0b
Table 17. DEFDCDC2 Register Field Descriptions
Bit
7
Field
XADJ2
Type
R/W
Reset
0b
Description
DCDC2 voltage adjustment option
0b = Output voltage is adjusted through the register setting.
1b = Output voltage is externally adjusted.
6
5–0
Reserved
R
DCDC2[5:0] R/W
0b
This bit is reserved
TPS65217A: 11
1000b
TPS65217B: 00
1000b
TPS65217C: 00
1000b
TPS65217D: 00
1000b
DCDC2 output voltage setting
00 0000b = 0.9 V
01 0000b = 1.3 V
10 0000b = 1.9 V
00 0001b = 0.925 01 0001b = 1.325 10 0001b = 1.95 V
V
V
10 0010b = 2 V
00 0010b = 0.950V 01 0010b = 1.35 V 10 0011b = 2.05 V
00 0011b = 0.975 01 0011b = 1.375 10 0100b = 2.1 V
V
V
10 0101b = 2.15 V
00 0100b = 1 V
01 0100b = 1.4 V
10 0110b = 2.2 V
00 0101b = 1.025 01 0101b = 1.425
10 0111b = 2.25 V
V
V
00 0110b = 1.05 V 01 0110b = 1.45 V 10 1000b = 2.3 V
00
V
00
00
V
0111b = 1.075 01 0111b = 1.475 10 1001b = 2.35 V
V
10 1010b = 2.4 V
1000b = 1.1 V
01 1000b = 1.5 V
10 1011b = 2.45 V
1001b = 1.125 01 1001b = 1.55 V 10 1100b = 2.5 V
00 1010b = 1.15 V
11 0000b = 2.7 V
11 0001b = 2.75 V
11 0010b = 2.8 V
11 0011b = 2.85 V
11 0100b = 2.9 V
11 0101b = 3 V
11 0110b = 3.1 V
11 0111b = 3.2 V
11 1000b = 3.3 V
11 1001b = 3.3 V
11 1010b = 3.3 V
11 1011b = 3.3 V
11 1100b = 3.3 V
01 1010b = 1.6 V
10 1101b = 2.55 V
11 1101b = 3.3 V
01 1011b = 1.65 V
10 1110b = 2.6 V
11 1110b = 3.3 V
10 1111b = 2.65 V
11 1111b = 3.3 V
00 1011b = 1.175 01
V
01
00 1100b = 1.2 V
01
00 1101b = 1.225
01
V
1100b = 1.7 V
1101b = 1.75 V
1110b = 1.8 V
1111b = 1.85 V
00 1110b = 1.25 V
00 1111b = 1.275
V
58
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8.6.18 DCDC3 Control Register (DEFDCDC3) (Address = 0x10) [reset = 0x08]
DEFDCDC3 is shown in Figure 46 and described in Table 18.
Return to Summary Table.
This register is password protected.
Figure 46. DEFDCDC3 Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
XADJ3
R/W
0b
6
Reserved
R
0b
5
4
R/W
0b
R/W
0b
3
2
DCDC3[5:0]
R/W
R/W
1b
0b
1
0
R/W
0b
R/W
0b
Table 18. DEFDCDC3 Register Field Descriptions
Bit
7
Field
XADJ3
Type
R/W
Reset
0b
Description
DCDC3 voltage adjustment option
0b = Output voltage is adjusted through register setting
1b = Output voltage is externally adjusted
6
5–0
Reserved
R
0b
This bit is reserved
DCDC3[5:0]
R/W
00 1000b
DCDC3 output voltage setting
00 0000b = 0.9 V
01 0000b = 1.3 V
10 0000b = 1.9 V
11 0000b = 2.7 V
00 0001b = 0.925 V
01 0001b = 1.325 V
10 0001b = 1.95 V
11 0001b = 2.75 V
00 0010b = 0.95 V
01 0010b = 1.35 V
10 0010b = 2 V
11 0010b = 2.8 V
00 0011b = 0.975 V
01 0011b = 1.375 V
10 0011b = 2.05 V
11 0011b = 2.85 V
00 0100b = 1 V
01 0100b = 1.4 V
10 0100b = 2.1 V
11 0100b = 2.9 V
00 0101b = 1.025 V
01 0101b = 1.425 V
10 0101b = 2.15 V
11 0101b = 3 V
00 0110b = 1.05 V
01 0110b = 1.45 V
10 0110b = 2.2 V
11 0110b = 3.1 V
00 0111b = 1.075 V
01 0111b = 1.475 V
10 0111b = 2.25 V
11 0111b = 3.2 V
00 1000b = 1.1 V
01 1000b = 1.5 V
10 1000b = 2.30 V
11 1000b = 3.3 V
00 1001b = 1.125 V
01 1001b = 1.55 V
10 1001b = 2.35 V
11 1001b = 3.3 V
00 1010b = 1.15 V
01 1010b = 1.6 V
10 1010b = 2.4 V
11 1010b = 3.3 V
00 1011b = 1.175 V
01 1011b = 1.65 V
10 1011b = 2.45 V
11 1011b = 3.3 V
00 1100b = 1.2 V
01 1100b = 1.7 V
10 1100b = 2.5 V
11 1100b = 3.3 V
00 1101b = 1.225 V
01 1101b = 1.75 V
10 1101b = 2.55 V
11 1101b = 3.3 V
00 1110b = 1.25 V
01 1110b = 1.8 V
10 1110b = 2.6 V
11 1110b = 3.3 V
00 1111b = 1.275 V
01 1111b = 1.85 V
10 1111b = 2.65 V
11 1111b = 3.3 V
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8.6.19 Slew-Rate Control Register (DEFSLEW) (Address = 0x11) [reset = 0x06]
DEFSLEW is shown in Figure 47 and described in Table 19.
Return to Summary Table.
Slew-rate control applies to all three DC/DC converters.
This register is password protected.
Figure 47. DEFSLEW Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
GO
R/W
0b
6
GODSBL
R/W
0b
5
PFM_EN1
R/W
0b
4
PFM_EN2
R/W
0b
3
PFM_EN3
R/W
0b
2
R/W
1b
1
SLEW[2:0]
R/W
1b
0
R/W
0b
Table 19. DEFSLEW Register Field Descriptions
Bit
7
Field
GO
Type
R/W
Reset
0b
Description
Go bit
NOTE: Bit is automatically reset at the end of the voltage
transition.
0b = No change
1b = Initiates the transition from the present state to the output
voltage setting currently stored in the DEFDCDCx register
6
GODSBL
R/W
0b
Go Disable bit
0b = Enabled
1b = Disabled; DCDCx output voltage changes whenever
setpoint is updated in DEFDCDCx register without having to
write to the GO bit. SLEW[2:0] setting does apply.
5
PFM_EN1
R/W
0b
PFM enable bit, DCDC1
0b = DC/DC converter operates in the PWM or PFM mode,
depending on load.
1b = DC/DC converter is forced into the fixed-frequency PWM
mode.
4
PFM_EN2
R/W
0b
PFM enable bit, DCDC2
0b = DC/DC converter operates in the PWM or PFM mode,
depending on load.
1b = DC/DC converter is forced into the fixed-frequency PWM
mode.
3
PFM_EN3
R/W
0b
PFM enable bit, DCDC3
0b = DC/DC converter operates in the PWM or PFM mode,
depending on load.
1b = DC/DC converter is forced into the fixed-frequency PWM
mode.
2–0
SLEW[2:0]
R/W
0110b
Output slew-rate setting
NOTE: The actual slew rate depends on the voltage step per
code. See the DCDC1 and DCDC2 registers for details.
000b = 224 µs/step (0.11 mV/µs at 25 mV per step)
001b = 112 µs/step (0.22 mV/µs at 25 mV per step)
010b = 56 µs/step (0.45 mV/µs at 25 mV per step)
011b = 28 µs/step (0.90 mV/µs at 25 mV per step)
100b = 14 µs/step (1.80 mV/µs at 25 mV per step)
101b = 7 µs/step (3.60 mV/µs at 25 mV per step)
110b = 3.5 µs/step (7.2 mV/µs at 25 mV per step)
111b = Immediate; slew rate is only limited by the control loop
response time.
60
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8.6.20 LDO1 Control Register (DEFLDO1) (Address = 0x12) [reset = 0x09]
DEFLDO1 is shown in Figure 48 and described in Table 20.
Return to Summary Table.
This register is password protected.
Figure 48. DEFLDO1 Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
Reserved
R
0b
6
Reserved
R
0b
5
Reserved
R
0b
4
Reserved
R
0b
3
2
1
LDO1[3:0]
R/W
R/W
0b
0b
R/W
1b
0
R/W
1b
Table 20. DEFLDO1 Register Field Descriptions
Bit
Field
Type
Reset
Description
7–4
Reserved
R
0000b
These bits are reserved
3–0
LDO1[3:0]
R/W
1001b
LDO1 output voltage setting
0000b = 1 V
1000b = 1.6 V
0001b = 1.1 V
1001b = 1.8 V
0010b = 1.2 V
1010b = 2.5 V
0011b = 1.25 V
1011b = 2.75 V
0100b = 1.3 V
1100b = 2.8 V
0101b = 1.35 V
1101b = 3 V
0110b = 1.4 V
1110b = 3.1 V
0111b = 1.5 V
1111b = 3.3 V
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8.6.21 LDO2 Control Register (DEFLDO2) (Address = 0x13) [reset = 0x38]
DEFLDO2 is shown in Figure 49 and described in Table 21.
Return to Summary Table.
This register is password protected.
Figure 49. DEFLDO2 Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
Reserved
R
0b
6
TRACK
R/W
0b
5
4
R/W
1b
R/W
1b
3
2
LDO2[5:0]
R/W
R/W
1b
0b
1
0
R/W
0b
R/W
0b
Table 21. DEFLDO2 Register Field Descriptions
Bit
Field
Type
Reset
Description
7
Reserved
R
0b
This bit is reserved
6
TRACK
R/W
0b
LDO2 tracking bit
0b = Output voltage is defined by the LDO2[5:0] bits.
1b = Output voltage follows the DCDC3 voltage setting (DEFDCDC3 register).
5–0
62
LDO2[5:0]
R/W
11 1000b
LDO2 output voltage setting
00 0000b = 0.9 V
01 0000b = 1.3 V
10 0000b = 1.9 V
11 0000b = 2.7 V
00 0001b = 0.925 V
01 0001b = 1.325 V
10 0001b = 1.95 V
11 0001b = 2.75 V
00 0010b = 0.95 V
01 0010b = 1.35 V
10 0010b = 2 V
11 0010b = 2.8 V
00 0011b = 0.975 V
01 0011b = 1.375 V
10 0011b = 2.05 V
11 0011b = 2.85 V
00 0100b = 1 V
01 0100b = 1.4 V
10 0100b = 2.1 V
11 0100b = 2.9 V
00 0101b = 1.025 V
01 0101b = 1.425 V
10 0101b = 2.15 V
11 0101b = 3 V
00 0110b = 1.05 V
01 0110b = 1.45 V
10 0110b = 2.2 V
11 0110b = 3.1 V
00 0111b = 1.075 V
01 0111b = 1.475 V
10 0111b = 2.25 V
11 0111b = 3.2 V
00 1000b = 1.1 V
01 1000b = 1.5 V
10 1000b = 2.3 V
11 1000b = 3.3 V
00 1001b = 1.125 V
01 1001b = 1.55 V
10 1001b = 2.35 V
11 1001b = 3.3 V
00 1010b = 1.15 V
01 1010b = 1.60 V
10 1010b = 2.4 V
11 1010b = 3.3 V
00 1011b = 1.175 V
01 1011b = 1.65 V
10 1011b = 2.45 V
11 1011b = 3.3 V
00 1100b = 1.2 V
01 1100b = 1.7 V
10 1100b = 2.5 V
11 1100b = 3.3 V
00 1101b = 1.225 V
01 1101b = 1.75 V
10 1101b = 2.55 V
11 1101b = 3.3 V
00 1110b = 1.25 V
01 1110b = 1.8 V
10 1110b = 2.6 V
11 1110b = 3.3 V
00 1111b = 1.275 V
01 1111b = 1.85 V
10 1111b = 2.65 V
11 1111b = 3.3 V
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8.6.22 Load Switch1 or LDO3 Control Register (DEFLS1) (Address = 0x14) [reset = X]
DEFLS1 is shown in Figure 50 and described in Table 22.
Return to Summary Table.
This register is password protected.
Figure 50. DEFLS1 Register
DATA BIT
FIELD NAME
READ/WRITE
TPS65217A
TPS65217B
RESET
VALUE
TPS65217C
TPS65217D
7
Reserved
R
0b
0b
0b
0b
6
Reserved
R
0b
0b
0b
0b
5
LS1LDO3
R/W
0b
1b
1b
1b
4
3
R/W
0b
1b
0b
0b
R/W
0b
1b
0b
0b
2
LDO3[4:0]
R/W
1b
1b
1b
1b
1
0
R/W
1b
1b
1b
1b
R/W
0b
1b
0b
0b
Table 22. DEFLS1 Register Field Descriptions
Bit
Field
Type
Reset
Description
7–6
Reserved
R
00b
This bit is reserved
5
LS1LDO3
R/W
TPS65217A: 0b
TPS65217B: 1b
TPS65217C: 1b
TPS65217D: 1b
LS or LDO tracking bit
TPS65217A: 0 0110b
TPS65217B: 1 1111b
TPS65217C: 0 0110b
TPS65217D: 0 0110b
LDO3 output voltage setting (LS1LDO3 = 1b)
4–0
LDO3[4:0]
R/W
0b = FET functions as load switch (LS1).
1b = FET is configured as LDO3.
0 0000b = 1.5 V
1 0000b = 2.55 V
0 0001b = 1.55 V
1 0001b = 2.6 V
0 0010b = 1.6 V
1 0010b = 2.65 V
0 0011b = 1.65 V
1 0011b = 2.7 V
0 0100b = 1.7 V
1 0100b = 2.75 V
0 0101b = 1.75 V
1 0101b = 2.8 V
0 0110b = 1.8 V
1 0110b = 2.85 V
0 0111b = 1.85 V
1 0111b = 2.9 V
0 1000b = 1.90V
1 1000b = 2.95 V
0 1001b = 2 V
1 1001b = 3 V
0 1010b = 2.1 V
1 1010b = 3.05 V
0 1011b = 2.2 V
1 1011b = 3.1 V
0 1100b = 2.3 V
1 1100b = 3.15 V
0 1101b = 2.4 V
1 1101b = 3.2 V
0 1110b = 2.45 V
1 1110b = 3.25 V
0 1111b = 2.5 V
1 1111b = 3.3 V
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8.6.23 Load Switch2 or LDO4 Control Register (DEFLS2) (Address = 0x15) [reset = X]
DEFLS2 is shown in Figure 51 and described in Table 23.
Return to Summary Table.
This register is password protected.
Figure 51. DEFLS2 Register
DATA BIT
FIELD NAME
READ/WRITE
TPS65217A
TPS65217B
RESET
VALUE
TPS65217C
TPS65217D
7
Reserved
R
0b
0b
0b
0b
6
Reserved
R
0b
0b
0b
0b
5
LS2LDO4
R/W
0b
1b
1b
1b
4
3
R/W
1b
1b
1b
1b
R/W
0b
1b
1b
1b
2
LDO4[4:0]
R/W
1b
1b
1b
1b
1
0
R/W
0b
1b
1b
1b
R/W
1b
1b
1b
1b
Table 23. DEFLS2 Register Field Descriptions
Bit
Type
Reset
Description
7–6
Reserved
R
00b
These bits are reserved
5
LS2LDO4
R/W
TPS65217A: 0b
TPS65217B: 1b
TPS65217C: 1b
TPS65217D: 1b
LS or LDO configuration bit
TPS65217A: 1 0101b
TPS65217B: 1 1111b
TPS65217C: 1 1111b
TPS65217D: 1 1111b
LDO4 output voltage setting (LS2LDO4 = 1b)
4–0
64
Field
LDO4[4:0]
R/W
0b = FET functions as load a switch (LS2).
1b = FET is configured as LDO4.
0 0000b = 1.5 V
1 0000b = 2.55 V
0 0001b = 1.55 V
1 0001b = 2.6 V
0 0010b = 1.6 V
1 0010b = 2.65 V
0 0011b = 1.65 V
1 0011b = 2.7 V
0 0100b = 1.7 V
1 0100b = 2.75 V
0 0101b = 1.75 V
1 0101b = 2.8 V
0 0110b = 1.8 V
1 0110b = 2.85 V
0 0111b = 1.85 V
1 0111b = 2.9 V
0 1000b = 1.9 V
1 1000b = 2.95 V
0 1001b = 2 V
1 1001b = 3 V
0 1010b = 2.1 V
1 1010b = 3.05 V
0 1011b = 2.2 V
1 1011b = 3.1 V
0 1100b = 2.3 V
1 1100b = 3.15 V
0 1101b = 2.4 V
1 1101b = 3.2 V
0 1110b = 2.45 V
1 1110b = 3.25 V
0 1111b = 2.5 V
1 1111b = 3.3 V
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8.6.24 Enable Register (ENABLE) (Address = 0x16) [reset = 0x00]
ENABLE is shown in Figure 52 and described in Table 24.
Return to Summary Table.
This register is password protected.
Figure 52. ENABLE Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
Reserved
R
0b
6
LS1_EN
R/W
0b
5
LS2_EN
R/W
0b
4
DC1_EN
R/W
0b
3
DC2_EN
R/W
0b
2
DC3_EN
R/W
0b
1
LDO1_EN
R/W
0b
0
LDO2_EN
R/W
0b
Table 24. ENABLE Register Field Descriptions
Bit
Field
Type
Reset
Description
7
Reserved
R
0b
This bit is reserved
6
LS1_EN
R/W
0b
LSW1 or LDO3 enable bit
NOTE: PWR_EN pin must be high to enable LS1 or LDO3.
0b = Disabled
1b = Enabled
5
LS2_EN
R/W
0b
LS2 or LDO4 enable bit
NOTE: PWR_EN pin must be high to enable LS2 or LDO4.
0b = Disabled
1b = Enabled
4
DC1_EN
R/W
0b
DCDC1 enable bit
NOTE: PWR_EN pin must be high to enable the DC/DC
converter.
0b = DCDC1 is disabled.
1b = DCDC1 is enabled.
3
DC2_EN
R/W
0b
DCDC2 enable bit
NOTE: PWR_EN pin must be high to enable the DC/DC
converter.
0b = DCDC2 is disabled.
1b = DCDC2 is enabled.
2
DC3_EN
R/W
0b
DCDC3 enable bit
NOTE: PWR_EN pin must be high to enable the DC/DC
converter.
0b = DCDC3 is disabled.
1b = DCDC3 is enabled.
1
LDO1_EN
R/W
0b
LDO1 enable bit
0b = Disabled
1b = Enabled
0
LDO2_EN
R/W
0b
LDO2 enable bit
0b = Disabled
1b = Enabled
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8.6.25 UVLO Control Register (DEFUVLO) (Address = 0x18) [reset = 0x03]
DEFUVLO is shown in Figure 53 and described in Table 25.
Return to Summary Table.
This register is password protected.
Figure 53. DEFUVLO Register
DATA BIT
7
6
5
4
3
2
FIELD NAME
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
1
0
UVLO[1:0]
READ/WRITE
R
R
R
R
R
R/W
R/W
R/W
RESET VALUE
0b
0b
0b
0b
0b
0b
1b
1b
Table 25. DEFUVLO Register Field Descriptions
Bit
Field
Type
Reset
Description
7–3
Reserved
R
00000b
These bits are reserved
2
Reserved
R/W
0b
This bit is reserved
1–0
UVLO[1:0]
R/W
11b
Undervoltage lockout setting
00b = 2.73 V
01b = 2.89 V
10b = 3.18 V
11b = 3.3 V
66
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8.6.26 Sequencer Register 1 (SEQ1) (Address = 0x19) [reset = X]
SEQ1 is shown in Figure 54 and described in Table 26.
Return to Summary Table.
This register is password protected.
Figure 54. SEQ1 Register
DATA BIT
FIELD NAME
READ/WRITE
TPS65217A
TPS65217B
RESET
VALUE
TPS65217C
TPS65217D
7
Reserved
R
0b
0b
0b
0b
6
R/W
0b
0b
0b
0b
5
DC1_SEQ[2:0]
R/W
0b
0b
0b
0b
4
R/W
1b
1b
1b
1b
3
Reserved
R
0b
0b
0b
0b
2
R/W
0b
1b
1b
1b
1
DC2_SEQ[2:0]
R/W
1b
0b
0b
0b
0
R/W
0b
1b
1b
1b
Table 26. SEQ1 Register Field Descriptions
Bit
7
6–4
Field
Type
Reset
Description
Reserved
R
0b
This bit is reserved
DC1_SEQ[3:0]
R/W
TPS65217A: 0001b
TPS65217B: 0001b
TPS65217C: 0001b
TPS65217D: 0001b
DCDC1 enable STROBE
0000b = Rail is not controlled by sequencer.
0001b = Enable at STROBE1
0010b = Enable at STROBE2
0011b = Enable at STROBE3
0100b = Enable at STROBE4
0101b = Enable at STROBE5
0110b = Enable at STROBE6
0111b = Enable at STROBE7
3
2–0
Reserved
R
0b
This bit is reserved
DC2_SEQ[3:0]
R/W
TPS65217A: 0010b
TPS65217B: 0101b
TPS65217C: 0101b
TPS65217D: 0101b
DCDC2 enable STROBE
0000b = Rail is not controlled by sequencer.
0001b = Enable at STROBE1
0010b = Enable at STROBE2
0011b = Enable at STROBE3
0100b = Enable at STROBE4
0101b = Enable at STROBE5
0110b = Enable at STROBE6
0111b = Enable at STROBE7
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8.6.27 Sequencer Register 2 (SEQ2) (Address = 0x1A) [reset = X]
SEQ2 is shown in Figure 55 and described in Table 27.
Return to Summary Table.
This register is password protected.
Figure 55. SEQ2 Register
DATA BIT
FIELD NAME
READ/WRITE
TPS65217A
TPS65217B
RESET
VALUE
TPS65217C
TPS65217D
7
Reserved
R
0b
0b
0b
0b
6
R/W
0b
1b
1b
1b
5
DC3_SEQ[2:0]
R/W
1b
0b
0b
0b
4
3
R/W
1b
1b
1b
1b
R/W
1b
1b
1b
1b
2
1
LDO1_SEQ[3:0]
R/W
R/W
0b
1b
1b
1b
1b
1b
1b
1b
0
R/W
1b
1b
1b
1b
Table 27. SEQ2 Register Field Descriptions
Bit
7
6–4
Field
Reserved
Type
R
DC3_SEQ[2 R/W
:0]
Reset
Description
0b
This bit is reserved
TPS65217A: 011b
TPS65217B: 101b
TPS65217C: 101b
TPS65217D: 101b
DCDC3 enable STROBE
000b = Rail is not controlled by sequencer.
001b = Enable at STROBE1
010b = Enable at STROBE2
011b = Enable at STROBE3
100b = Enable at STROBE4
101b = Enable at STROBE5
110b = Enable at STROBE6
111b = Enable at STROBE7
3–0
LDO1_SEQ
[3:0]
R/W
TPS65217A: 1011b
TPS65217B: 1111b
TPS65217C: 1111b
TPS65217D: 1111b
LDO1 enable state
0000b = Rail is not controlled by sequencer.
0001b = Enable at STROBE1
0010b = Enable at STROBE2
0011b = Enable at STROBE3
0100b = Enable at STROBE4
0101b = Enable at STROBE5
0110b = Enable at STROBE6
0111b = Enable at STROBE7
1000b = Rail is not controlled by sequencer
1001b = Rail is not controlled by sequencer
1010b to 1101b = Reserved
1110b = Enable at STROBE14
1111b = Enabled at STROBE15 (with SYS)
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8.6.28 Sequencer Register 3 (SEQ3) (Address = 0x1B) [reset = X]
SEQ3 is shown in Figure 56 and described in Table 28.
Return to Summary Table.
This register is password protected.
Figure 56. SEQ3 Register
DATA BIT
FIELD NAME
READ/WRITE
TPS65217A
TPS65217B
RESET
VALUE
TPS65217C
TPS65217D
7
6
5
LDO2_SEQ[3:0]
R/W
R/W
0b
1b
0b
1b
0b
1b
0b
1b
R/W
0b
0b
0b
0b
4
R/W
0b
0b
1b
1b
3
Reserved
R
0b
0b
0b
0b
2
R/W
0b
0b
0b
0b
1
LDO3_SEQ[2:0]
R/W
0b
1b
1b
1b
0
R/W
1b
1b
0b
0b
Table 28. SEQ3 Register Field Descriptions
Bit
7–4
Field
LDO2_SEQ[3:0]
Type
R/W
Reset
TPS65217A: 0010b
TPS65217B: 0010b
TPS65217C: 0011b
TPS65217D: 0011b
Description
LDO2 enable STROBE
0000b = Rail is not controlled by sequencer.
0001b = Enable at STROBE1
0010b = Enable at STROBE2
0011b = Enable at STROBE3
0100b = Enable at STROBE4
0101b = Enable at STROBE5
0110b = Enable at STROBE6
0111b = Enable at STROBE7
1000b = Rail is not controlled by sequencer.
1001b = Rail is not controlled by sequencer.
1010b to 1101b = Reserved
1110b = Enable at STROBE14
1111b = Enabled at STROBE15 (with SYS)
3
2–0
Reserved
R
0b
This bit is reserved
LDO3_SEQ[2:0]
R/W
TPS65217A: 001b
TPS65217B: 011b
TPS65217C: 010b
TPS65217D: 010b
LS1 or LDO3 enable state
000b = Rail is not controlled by sequencer
001b = Enable at STROBE1
010b = Enable at STROBE2
011b = Enable at STROBE3
100b = Enable at STROBE4
101b = Enable at STROBE5
110b = Enable at STROBE6
111b = Enable at STROBE7
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8.6.29 Sequencer Register 4 (SEQ4) (Address = 0x1C) [reset = 0x40]
SEQ4 is shown in Figure 57 and described in Table 29.
Return to Summary Table.
This register is password protected.
Figure 57. SEQ4 Register
DATA BIT
7
FIELD NAME
Reserved
6
5
4
LDO4_SEQ[2:0]
3
2
1
0
Reserved
Reserved
Reserved
Reserved
READ/WRITE
R
R/W
R/W
R/W
R
R
R
R
RESET VALUE
0b
1b
0b
0b
0b
0b
0b
0b
Table 29. SEQ4 Register Field Descriptions
Bit
7
6–4
Field
Type
Reset
Description
Reserved
R
0b
This bit is reserved
LDO4_SEQ[2:0]
R/W
100b
LS2 or LDO4 enable state
0000b = Rail is not controlled by sequencer.
0001b = Enable at STROBE1
0010b = Enable at STROBE2
0011b = Enable at STROBE3
0100b = Enable at STROBE4
0101b = Enable at STROBE5
0110b = Enable at STROBE6
0111b = Enable at STROBE7
3–0
70
Reserved
R
0000b
These bits are reserved
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8.6.30 Sequencer Register 5 (SEQ5) (Address = 0x1D) [reset = X]
SEQ5 is shown in Figure 58 and described in Table 30.
Return to Summary Table.
This register is password protected.
Figure 58. SEQ5 Register
DATA BIT
FIELD NAME
READ/WRITE
TPS65217A
TPS65217B
RESET
VALUE
TPS65217C
TPS65217D
7
6
DLY1[1:0]
R/W
R/W
1b
0b
1b
0b
0b
0b
0b
0b
5
4
DLY2[1:0]
R/W
R/W
0b
0b
0b
0b
1b
0b
1b
0b
3
2
DLY3[1:0]
R/W
R/W
0b
0b
0b
0b
0b
0b
0b
0b
1
0
DLY4[1:0]
R/W
R/W
0b
0b
0b
0b
0b
0b
0b
0b
Table 30. SEQ5 Register Field Descriptions
Bit
7–6
Field
DLY1[1:0]
Type
R/W
Reset
TPS65217A: 10b
TPS65217B: 10b
TPS65217C: 00b
TPS65217D: 00b
Description
Delay1 time
00b = 1 ms
01b = 2 ms
10b = 5 ms
11b = 10 ms
5–4
DLY2[1:0]
R/W
TPS65217A: 00b
TPS65217B: 00b
TPS65217C: 10b
TPS65217D: 10b
Delay2 time
00b = 1 ms
01b = 2 ms
10b = 5 ms
11b = 10 ms
3–2
DLY3[1:0]
R/W
00b
Delay3 time
00b = 1 ms
01b = 2 ms
10b = 5 ms
11b = 10 ms
1–0
DLY4[1:0]
R/W
00b
Delay4 time
00b = 1 ms
01b = 2 ms
10b = 5 ms
11b = 10 ms
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8.6.31 Sequencer Register 6 (SEQ6) (Address = 0x1E) [reset = 0x00]
SEQ6 is shown in Figure 59 and described in Table 31.
Return to Summary Table.
This register is password protected.
Figure 59. SEQ6 Register
DATA BIT
FIELD NAME
READ/WRITE
RESET VALUE
7
6
DLY5[1:0]
R/W
R/W
0b
0b
5
4
DLY6[1:0]
R/W
R/W
0b
0b
3
Reserved
R
0b
2
SEQUP
R/W
0b
1
SEQDWN
R/W
0b
0
INSTDWN
R/W
0b
Table 31. SEQ6 Register Field Descriptions
Bit
Field
Type
Reset
Description
7–6
DLY5[1:0]
R/W
00b
Delay5 time
00b = 1 ms
01b = 2 ms
10b = 5 ms
11b = 10 ms
5–4
DLY6[1:0]
R/W
00b
Delay6 time
00b = 1 ms
01b = 2 ms
10b = 5 ms
11b = 10 ms
3
Reserved
R
0b
This bit is reserved
2
SEQUP
R/W
0b
Set this bit to 1b to trigger a power-up sequence. This bit is
automatically reset to 0b.
1
SEQDWN
R/W
0b
Set this bit to 1b to trigger a power-down sequence. This bit is
automatically reset to 0b.
0
INSTDWN
R/W
0b
Instant shutdown bit
NOTE: Shutdown occurs when the PWR_EN pin is pulled low or
the SEQDWN bit is set. Only those rails controlled by the
sequencer are shut down.
0b = Shutdown follows reverse power-up sequence
1b = All delays are bypassed and all rails are shut down at the
same time.
72
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPS65217x device is designed to pair with various application processors. For detailed information on using
the TPS65217x device with Sitara AM335x processors, refer to the Powering the AM335x with the TPS65217x
user's guide.
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9.2 Typical Application
AC
SYS
from AC connector
To system load
4.7µF
USB
BAT
Single cell
Li+ Battery
Power Path
and Charger
from USB connector
4.7µF
VDDS_PLL_MPU
VDDS_PLL_CORE_LCD
VDDS_SRAM_MPU_BB
INT_LDO
100nF
BYPASS
BAT_SENSE
10µF
TS
75k
VDDS_SRAM_CORE_BG
VDDA1P8V_USB0
VDDS_DDR
10k NTC
VDDS
10µF
L1
VIN_DCDC1
VDDS_OSC
VDDS_PLL_DDR
22µF
DCDC1
VDDSHVx(1.8)
(1.8V)
VDCDC1
VDDA_ADC
10µF
DDR2
10µF
L2
VIN_DCDC2
DCDC2
(3.3V)
VDCDC2
VDDSHVx(3.3)
10µF
VDDA3P3V_USB0
10µF
SYS
L3
VIN_DCDC3
DCDC3
(1.1V)
VDCDC3
VDD_CORE
10µF
VDD_MPU
10µF
VIN_LDO
VLDO1
LDO1
(1.8V)
VDDS_RTC
2.2uF
4.7µF
AGND
VLDO2
LDO2
(3.3V)
2.2uF
PGND
LS1_IN
LS1_OUT
LS1/LDO3
SYS or VDCDCx
10uF
LS2_IN
LS2_OUT
LS2/LDO4
SYS or VDCDCx
10uF
VBAT
VSYS
VICHARGE
VTS
MUX_IN
(0..3.3V)
Any system
power needs
Any system
power needs
MUX_OUT
AIN4
MUX
100nF
Any system voltage
Always-on
supply
Always-on
supply
100k
100k
PB_IN
nRESET
4.7k
VDDSHV6
4.7k
VDDSHV6
No Connect
SCL
VIO
VLDO1
Any system
power needs
I2C0_SCL
SDA
18uH
L4
I2C0_SDA
PWR_EN
PMIC_PWR_EN
SYS
PGOOD
FB_WLED
PWRONRSTN
LDO_PGOOD
4.7µF
WLED
Driver
10k
VDDSHV6
100k
VLDO1
RTC_PWRONRSTN
nINT
EXTINTn
nWAKEUP
ISINK1
EXT_WAKEUP
ISINK2
ISET1
ISET2
Power Pad (TM)
TPS65217A
AM335x
For connection diagrams for all members of the TPS65217x family, refer to the Powering the AM335x with the
TPS65217x user's guide.
Figure 60. Connection Diagram for Typical Application
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Typical Application (continued)
9.2.1 Design Requirements
For this design example, use the parameters listed in Table 32.
Table 32. Design Requirements
RAIL
VOLTAGE
SEQUENCE
DCDC1
1.8 V
1
DCDC2
3.3 V
2
DCDC3
1.1 V
3
LDO1
1.8 V
15
LDO2
3.3 V
2
LS1 or LDO3
Load switch
1
LS2 or LDO4
Load switch
4
9.2.2 Detailed Design Procedure
Table 33 lists the recommended inductors for the WLED boost converter. Table 34 lists the recommended
capacitor for the WLED boost converter.
Table 33. Recommended Inductors for WLED Boost Converter
PART NUMBER
SUPPLIER
VALUE (µH)
RDS (mΩ) MAX
RATED CURRENT (A)
DIMENSIONS
(mm × mm × mm)
CDRH74NP-180M
Sumida
18
73
1.31
7.5 × 7.5 × 4.5
P1167.183
Pulse
18
37
1.5
7.5 × 7.5 × 4.5
Table 34. Recommended Output Capacitor for WLED Boost Converter
PART NUMBER
SUPPLIER
VOLTAGE RATING (V)
VALUE (µF)
DIMENSIONS
DIELECTRIC
UMK316BJ475ML-T
Taiyo Yuden
50
4.7
1206
X5R
9.2.2.1 Output Filter Design (Inductor and Output Capacitor)
9.2.2.1.1 Inductor Selection for Buck Converters
The step-down converters operate typically with 2.2-µH output inductors. Larger or smaller inductor values can
be used to optimize the performance of the device for specific operation conditions. The selected inductor must
be rated for its dc resistance and saturation current. The dc resistance of the inductance directly influences the
efficiency of the converter. Therefore, an inductor with the lowest dc resistance should be selected for highest
efficiency.
Use Equation 4 to calculate the maximum inductor current under static load conditions. The saturation current of
the inductor should be rated higher than the maximum inductor current, because, during heavy load transients,
the inductor current increases to a value greater than the calculated value.
DIL
IL max = I OUT max +
2
where
•
•
•
ILmax is the maximum inductor current
IOUTmax is the maximum output current
ΔIL is the peak-to-peak inductor ripple current (see Equation 5)
(4)
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1DIL = VOUT ´
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VOUT
VIN
L´f
where
•
•
L is the inductor value.
f is the switching frequency (2.25 MHz typical).
(5)
The highest inductor current occurs at maximum input voltage (VIN). Open-core inductors have a soft saturation
characteristic and can usually support greater inductor currents than a comparable shielded inductor.
A more conservative approach is to select the inductor current rating just for the maximum switch current of the
corresponding converter. The core material must be considered because it differs from inductor to inductor and
has an impact on the efficiency, especially at high switching frequencies. Also, the resistance of the windings
greatly affects the converter efficiency at high load. Table 35 lists the recommended inductors.
Table 35. Recommended Inductors for DCDC1, DCDC2, and DCDC3
PART NUMBER
SUPPLIER
VALUE (µH)
RDS (mΩ) MAX
RATED CURRENT (A)
DIMENSIONS (mm)
LQM2HPN2R2MG0L
Murata
2.2
100
1.3
2 x 2.5 x 0.9
VLCF4018T-2R2N1R4-2
TDK
2.2
60
1.44
3.9 x 4.7 x 1.8
9.2.2.1.2 Output Capacitor Selection
The advanced fast-response voltage-mode control scheme of the two converters lets the use of small ceramic
capacitors with a typical value of 10 µF, without having large output-voltage undershoots and overshoots during
heavy load transients. Ceramic capacitors having low ESR values result in the lowest output voltage ripple and
are therefore recommended.
If ceramic output capacitors are used, the capacitor RMS ripple-current rating must always meet the application
requirements. Use Equation 6 to calculate the RMS ripple current (IRMSCout).
V
1 - OUT
VIN
1
IRMSCout = VOUT ´
´
L´f
2´ 3
(6)
At the nominal load current, the inductive converters operate in PWM mode and the overall output voltage ripple
is the sum of the voltage spike caused by the output capacitor ESR plus the voltage ripple caused by charging
and discharging the output capacitor as shown in Equation 7.
V
1 - OUT
VIN
æ
ö
1
DVOUT = VOUT ´
´ç
+ ESR ÷
L´f
è 8 ´ COUT ´ f
ø
where
•
the highest output voltage ripple occurs at the highest input voltage
(7)
At light-load currents, the converters operate in power-save mode, and the output-voltage ripple depends on the
output capacitor value. The output-voltage ripple is set by the internal comparator delay and the external
capacitor. The typical output-voltage ripple is less than 1% of the nominal output voltage.
9.2.2.1.3 Input Capacitor Selection
Because the buck converter has a pulsating input current, a low-ESR input capacitor is required for the best input
voltage filtering and to minimize the interference with other circuits caused by high input-voltage spikes. The
converters require a ceramic input capacitor of 10 µF. The input capacitor can be increased without any limit for
better input voltage filtering. Table 36 lists the recommended ceramic capacitors.
76
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Table 36. Recommended Input Capacitors for DCDC1, DCDC2, and DCDC3
PART NUMBER
SUPPLIER
VALUE (µF)
DIMENSIONS
C2012X5R0J226MT
TDK
22
0805
JMK212BJ226MG
Taiyo Yuden
22
0805
JMK212BJ106M
Taiyo Yuden
10
0805
C2012X5R0J106M
TDK
10
0805
9.2.2.2 5-V Operation Without a Battery
The TPS65217x device has a linear charger for Li+ batteries, and TI recommends that a battery is included in
designs for ideal performance. However, the device can operate without a battery attached. Three basic use
cases are available for operation without a battery:
1. The system is designed for battery operation, but the battery is removable and the end user does not have
the battery inserted. The system can be powered by connecting an AC adaptor or USB supply.
2. A nonportable system operates on a (regulated) 5-V supply, but the PMIC must provide protection against
input overvoltage up to 20 V. Electrically, this case is the same as the previous case where the device is
powered by an AC adaptor. The battery pins (BAT and BATSENSE) are shorted together and floating, the
temperature sensing pin (TS) is left floating, and power is provided through the AC pin. The DC/DC
converters, the WLED driver, and the LDO regulators connect to the overvoltage-protected SYS pins. The
load switches (or LDO3 and LDO4, depending on configuration) typically connect to one of the lower system
rails, but can also be connected to the SYS pin.
3. A nonportable system operates on a regulated 5-V supply that does not require input overvoltage protection.
In this case, the 5-V power supply is connected through the BAT pins. The DC/DC converter inputs, WLED
driver, LDO1, and LDO2 are connected directly to the 5-V supply. A standard, constant-value 10-kΩ resistor
is connected from the TS pin to ground to simulate the NTC thermistor monitoring the battery. The load
switches (or LDO3 and LDO4, depending on configuration) typically connect to one of the lower system rails,
but can also be connected directly to the 5-V input supply.
Figure 61 shows the connection of the input power supply to the device for 5-V only operation, with 20-V input
overvoltage protection. Figure 62 shows the connection of the input power supply to the device for 5-V only
operation without 20-V input overvoltage protection. Table 37 lists the functional differences between both
setups.
5 V power supply
(4.3, 5.8 V)
AC
USB
AC
USB
BAT
BAT
22 μ
BAT, BAT_SENSE,
and TS pins are
floating
BAT
BAT
BAT_SENSE
TS
SYS
22 μ SYS
BAT_SENSE
TS
10 k
SYS
4.7 μ SYS
TPS65217
18 μ
L4
VIN_DCDC1
5V power supply
(2.7..5.5V)
18 μ
L4
VIN_DCDC1
VIN_DCDC2
VIN_DCDC3
VIN_LDO
VIN_DCDC2
VIN_DCDC3
VIN_LDO
10 μ 10 μ
TPS65217
10 μ 10 μ
10 μ 10 μ
Copyright © 2017, Texas Instruments Incorporated
(1)
10 μ 10 μ
The DC/DC converters are not protected
against input overvoltage.
Copyright © 2017, Texas Instruments Incorporated
Figure 62. Power Connection for 5-V Only
Operation Directly Wired to BAT Instead of a
Battery
The SYS node and DC/DC converters are
protected against input overvoltage up to
20 V.
Figure 61. Power Connection for 5-V Only
Operation With OVP, Without a Battery
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Table 37. Functional Differences Between 5-V Only Operation Without a Battery and With and Without 20V Input Overvoltage Protection
RESOURCE IMPACTED
POWER SUPPLIED THROUGH AC PIN
(CASE (1) AND (2))
POWER SUPPLIED THROUGH BAT PIN
(CASE (3))
Input protection
The maximum operating input voltage is 5.8 V,
but the device is protected from input
overvoltage up to 20 V.
The maximum operating input voltage is 5.5 V.
Power efficiency
The input current for DC/DC converters passes
through AC-SYS power-path switch
(approximately 150 mΩ).
The internal power path is bypassed to minimize I2R
losses.
BATTEMP bit
The BATTEMP bit (bit 0 in register 0x03) always
reads 1, but has no effect on operation of the
device.
The BATTEMP bit (bit 0 in register 0x03) always
reads 0.
Output rail status on initial power
connection
The LDO1 regulator is automatically powered up
when the AC pin is connected to the 5-V supply,
and the device goes to the WAIT PWR_EN
state. If the PWR_EN pin is not asserted within 5
s, the LDO1 regulator turns OFF.
The LDO1 regulator is OFF when the BAT pin is
connected to the 5-V supply. The PB_IN pin must be
pulled low to go to the WAIT PWR_EN state. The
PB_IN pin cannot stay low for greater than 8 s or a
reset will occur.
Response to input overvoltage
Device goes to the OFF state. (1)
Not applicable
Power path
In an application with one source of input power,
if the input power drops below UVLO and
recovers before reaching 100 mV, the rising
edge may not be detected by the device. This
condition, known as a brownout, can cause a
lockup of the device in which the I2C is
responsive but SYS is not connected to the AC
or USB through the power path. (2)
Not applicable
(1)
(2)
78
If a battery is present in the system, the TPS65217x device automatically switches from using the AC pin as the power supply to using
BAT as the supply when the AC input exceeds 6.4 V. The device automatically switches back to supplying power from the AC pin when
the AC input recovers and the voltages decreases to less than 5.8 V.
As a workaround, supply power through the BAT input pin or change UVLO to 2.73 V by changing the UVLO[1:0] bits in register 0x18 to
00b. This setting must be changed during initialization after the first power-on event of the device. The bits return to the default value
when all I2C registers reset. As a result, if a brownout condition can occur during the first power-on event, then external circuitry must be
added to prevent the TPS65217x device from being affected by the brownout condition.
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9.2.3 Application Curves
Figure 63. DCDCx Voltage Ripple and Inductor Current at 5
mA Load, 1.1-V VOUT
Figure 64. DCDCx Voltage Ripple and Inductor Current at
50 mA Load, 1.1-V VOUT
Figure 65. DCDCx Voltage Ripple and Inductor Current at
300 mA Load, 1.1-V VOUT
Figure 66. DCDCx Voltage Ripple and Inductor Current at 5
mA Load, 1.5-V VOUT
Figure 67. DCDCx Voltage Ripple and Inductor Current at
50 mA Load, 1.5-V VOUT
Figure 68. DCDCx Voltage Ripple and Inductor Current at
300 mA Load, 1.5-V VOUT
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Figure 69. DCDCx Voltage Ripple and Inductor Current at 5
mA Load, 3.3-V VOUT
Figure 70. DCDCx Voltage Ripple and Inductor Current at
50 mA Load, 3.3-V VOUT
Figure 71. DCDCx Voltage Ripple and Inductor Current at
300 mA Load, 3.3-V VOUT
Figure 72. DCDCx Load Transient Response, 1.1 VOUT, 50500-50 mA Load
Figure 73. DCDCx Load Transient Response, 1.1 VOUT,
200-1000-200 mA Load
Figure 74. DCDCx Load Transient Response, 1.5 VOUT, 50500-50 mA Load
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Figure 75. DCDCx Load Transient Response, 1.5 VOUT,
200-1000-200 mA Load
Figure 76. DCDCx Load Transient Response, 3.3 VOUT, 50500-50 mA Load
Figure 77. DCDCx Load Transient Response, 3.3 VOUT, 200-1000-200 mA Load
10 Power Supply Recommendations
The device is designed to operate with an input voltage supply range from 2.75 V to 5.8 V. This input supply can
be from a single-cell Li-ion, Li-polymer batteries, dc supply, USB supply, or other externally regulated supply. If
the input supply is located more than a few inches from the TPS65217x device, additional bulk capacitance may
be required in addition to the ceramic bypass capacitors. An electrolytic capacitor with a value of 4.7 µF is a
typical choice.
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11 Layout
11.1 Layout Guidelines
As for all switching power supplies, the layout is an important step in the design. Proper function of the device
requires careful attention to printed circuit-board (PCB) layout. Care must be taken in board layout to get the
specified performance.
• The VIN_DCDCx and VINLDO pins should be bypassed to ground with a low-ESR ceramic bypass capacitor.
The typical recommended bypass capacitance is 10 μF and 4.7 μF with a X5R or X7R dielectric, respectively.
• The optimum placement of these bypass capacitors is close to the VIN_DCDCx and VINLDO pins of the
TPS65217x device. Care should be taken to minimize the loop area formed by the bypass capacitor
connection, the VIN_DCDCx and VINLDO pins, and the thermal pad of the device.
• The thermal pad should be tied to the PCB ground plane with multiple vias.
• The inductor traces from the Lx pins to the VOUT node (VDCDCx) of each DCDCx converter should be kept
on the PCB top layer and free of any vias.
• The VLDOx and VDCDCx pin (feedback pin labeled FB1 in Figure 78) traces should be routed away from any
potential noise source to avoid coupling.
• The DCDCx output capacitance should be placed immediately at the DCDCx pin. Excessive distance
between the capacitance and DCDCx pin may cause poor converter performance.
11.2 Layout Example
VOUT
Output filter
capacitor
L1
Via to ground plane
Via to internal plane
FB1
Input bypass
capacitor
IN
Thermal
Pad
Figure 78. Layout Example Schematic
82
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation see the following:
• Texas Instruments, Basic Calculation of a Buck Converter's Power Stage application report
• Texas Instruments, Designing Robust TPS65217 Systems for VIN Brownout application report
• Texas Instruments, Empowering Designs With Power Management IC (PMIC) for Processor Applications
application report
• Texas Instruments, Evaluation Module for TPS65217 Power Management IC user's guide
• Texas Instruments, Powering the AM335x with the TPS65217x user's guide
• Texas Instruments, TPS65217x Schematic Checklist
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
E2E is a trademark of Texas Instruments.
Sitara is a trademark of Texas Instruments Incorporated.
ARM, Cortex are registered trademarks of ARM Ltd.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and without
revision of this document. For browser-based versions of this data sheet, see the left-hand navigation pane.
84
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PACKAGE OPTION ADDENDUM
www.ti.com
6-Feb-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TPS65217ARSLR
ACTIVE
VQFN
RSL
48
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 105
TPS
65217A
TPS65217ARSLT
ACTIVE
VQFN
RSL
48
250
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 105
TPS
65217A
TPS65217BRSLR
ACTIVE
VQFN
RSL
48
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 105
TPS
65217B
TPS65217BRSLT
ACTIVE
VQFN
RSL
48
250
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 105
TPS
65217B
TPS65217CRSLR
ACTIVE
VQFN
RSL
48
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 105
TPS
65217C
TPS65217CRSLT
ACTIVE
VQFN
RSL
48
250
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 105
TPS
65217C
TPS65217DRSLR
ACTIVE
VQFN
RSL
48
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 105
TPS
65217D
TPS65217DRSLT
ACTIVE
VQFN
RSL
48
250
Green (RoHS
& no Sb/Br)
NIPDAU
Level-3-260C-168 HR
-40 to 105
TPS
65217D
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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