TPS6521815
TPS6521815
SLDS261A – NOVEMBER 2019 – REVISED FEBRUARY
2021
SLDS261A – NOVEMBER 2019 – REVISED FEBRUARY 2021
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TPS6521815 User-Programmable Power Management IC (PMIC) With 6 DC/DC
Converters, 1 LDO, and 3 Load Switches
1 Features
•
•
•
•
•
•
•
Three Adjustable Step-Down Converters With
Integrated Switching FETs (DCDC1, DCDC2, and
DCDC3):
– Up to 1.8-A output current
– VIN Range From 2.7 V to 5.5 V
– Adjustable Output Voltage Range 0.85 V to
1.675 V (DCDC1 and DCDC2)
– Adjustable Output Voltage Range 0.9 V to 3.4 V
(DCDC3)
– Power Save Mode at Light Load Current
– 100% Duty Cycle for Lowest Dropout
– Active Output-Discharge When Disabled
One Adjustable Buck-Boost Converter With
Integrated Switching FETs (DCDC4):
– Up to 1.6-A output current
– VIN Range from 2.7 V to 5.5 V
– Adjustable Output Voltage Range from 1.175 V
to 3.4 V
– Active Output-Discharge When Disabled
Two Low-Quiescent Current, High Efficiency StepDown Converters for Battery Backup Domain
(DCDC5, DCDC6)
– DCDC5: 1-V Output
– DCDC6: 1.8-V Output
– VIN Range from 2.2 V to 5.5 V
– Supplied From System Power or Coin-Cell
Backup Battery
Adjustable General-Purpose LDO (LDO1)
– LDO1: 1.8-V Default up to 400 mA
– VIN Range from 1.8 V to 5.5 V
– Adjustable Output Voltage Range from 0.9 V to
3.4 V
– Active Output-Discharge When Disabled
Low-Voltage Load Switch (LS1) With 350-mA
Current Limit
– VIN Range From 1.2 V to 3.6 V
– 110-mΩ (Max) Switch Impedance at 1.35 V
5-V Load Switch (LS2) With 100-mA or 500-mA
Selectable Current Limit
– VIN Range From 3 V to 5.5 V
– 500-mΩ (Max) Switch Impedance at 5 V
High-Voltage Load Switch (LS3) With 100-mA or
500-mA Selectable Current Limit
– VIN Range From 1.8 V to 10 V
•
•
– 500-mΩ (Max) Switch Impedance
Supervisor With Built-in Supervisor Function
Monitors
– DCDC1, DCDC2 ±4% Tolerance
– DCDC3, DCDC4 ±5% Tolerance
– LDO1 ±5% Tolerance
Protection, Diagnostics, and Control:
– Undervoltage Lockout (UVLO)
– Always-on Push-Button Monitor
– Overtemperature Warning and Shutdown
– Separate Power-Good Output for Backup and
Main Supplies
– I2C Interface (Address 0x24) (See Timing
Requirements for I2C Operation at 400 kHz)
2 Applications
•
•
•
•
•
•
•
Grid Infrastructure
Appliances
Building Security Systems
Human-Machine Interface (HMI)
Industrial Automation
Electronic Point of Sale (ePOS)
Test and Measurement
3 Description
The TPS6521815 is a single chip, powermanagement IC (PMIC) that is user-programmable to
power a variety of SoCs and FPGAs. The device is
characterized across a –40°C to +105°C temperature
range, making it suitable for various industrial
applications.
Device Information (1)
PART NUMBER
TPS6521815
(1)
PACKAGE
VQFN (48)
BODY SIZE (NOM)
6.00 mm × 6.00 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
An©IMPORTANT
NOTICEIncorporated
at the end of this data sheet addresses availability, warranty, changes, use in
safety-critical
applications,
Copyright
2021 Texas Instruments
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3.1 Simplified Schematic
+
10 …F
VIO
VIO
1 …F
4.7 …F
CC
GPIO3
IN_BU
NC
NC
LS1
IN_LS1
IN_LS2
LS2
GPO2
IN_BIAS
INT_LDO
100 k
100 k
4.7 …F
4.7 …F
1.5 µH
VDD_18
(DCDC6)
100 k
10 …F
1.5 µH
L3
L6
FB3
FB6
nWAKEUP
FB5
FB2
L5
L2
100 k
100 k
22 …F
DC34_SEL
nINT
PFI
PWR_EN
DCDC4
FB1
IN_DCDC4
GPIO1
L4A
VIO
100 k
100 k
nPFO
AC_DET
VIO
PGOOD
100 k
IN_BIAS
VIO
10 …F
10 …F
LS3
100 k
IN_LS3
IN_LDO1
LDO1
100 k
SCL
SDA
VIO
VIO
4.7 …F
47 …F
1.5 µH
L1
1.5 µH
100 nF
L4B
100 k
10 …F
1.5 µH
IN_nCC
IN_DCDC1
VIO
100 k
22 …F
PGOOD_BU
PB
IN_BIAS
10 µH
TPS65218xx
IN_DCDC2
4.7 …F
1 …F
SYS_BU
IN_DCDC3
10 …F
±
10
10 …F
4.7 …F
4.7 …F
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Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
3.1 Simplified Schematic...................................................2
4 Revision History.............................................................. 3
5 Description (continued).................................................. 4
6 Pin Configuration and Functions...................................5
7 Specifications.................................................................. 7
7.1 Absolute Maximum Ratings........................................ 7
7.2 ESD Ratings............................................................... 7
7.3 Recommended Operating Conditions.........................8
7.4 Thermal Information....................................................8
7.5 Electrical Characteristics.............................................9
7.6 Timing Requirements................................................ 18
7.7 Typical Characteristics.............................................. 19
8 Detailed Description......................................................20
8.1 Overview................................................................... 20
8.2 Functional Block Diagram......................................... 21
8.3 Feature Description...................................................22
8.4 Device Functional Modes..........................................43
8.5 Programming............................................................ 45
8.6 Register Maps...........................................................46
9 Application and Implementation.................................. 73
9.1 Application Information............................................. 73
9.2 Typical Application.................................................... 75
10 Power Supply Recommendations..............................79
11 Layout........................................................................... 79
11.1 Layout Guidelines................................................... 79
11.2 Layout Example...................................................... 79
12 Device and Documentation Support..........................81
12.1 Documentation Support.......................................... 81
12.2 Receiving Notification of Documentation Updates..81
12.3 Support Resources................................................. 81
12.4 Trademarks............................................................. 81
12.5 Electrostatic Discharge Caution..............................81
12.6 Glossary..................................................................81
13 Mechanical, Packaging, and Orderable
Information.................................................................... 81
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision * (November 2019) to Revision A (February 2021)
Page
• Updated the numbering format for tables, figures, and cross-references throughout the document..................1
• Removed medical equipment from applications section.....................................................................................1
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5 Description (continued)
Three hysteretic step-down converters are targeted at providing power for the processor core, MPU, and DDRx
memory. The default output voltages for each converter can be adjusted through the I2C interface. DCDC1 and
DCDC2 feature dynamic voltage scaling to provide power at all operating points of the processor. DCDC1 and
DCDC2 also have programmable slew rates to help protect processor components. DCDC3 remains powered
while the processor is in sleep mode to maintain power to DDRx memory. Backup power provides two step-down
converters for the tamper, RTC, or both domains of the processor if system power fails or is disabled. If both
system power and coin-cell battery are connected to the PMIC, power is not drawn from the coin-cell battery. A
separate power good signal monitors the backup converters. A battery backup monitor determines the power
level of the coin-cell battery.
4
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6 Pin Configuration and Functions
L1
FB1
PWR_EN
nINT
PB
IN_DCDC2
L2
FB2
nWAKEUP
FB3
L3
IN_DCDC3
48
47
46
45
44
43
42
41
40
39
38
37
Figure 6-1 shows the 48-pin RSL Plastic Quad Flatpack No-Lead.
IN_DCDC1
1
36
IN_BIAS
SDA
2
35
INT_LDO
SCL
3
34
GPO2
LDO1
4
33
LS2
IN_LDO1
5
32
IN_LS2
IN_LS3
6
31
IN_LS1
LS3
7
30
LS1
PGOOD
8
29
N/C
AC_DET
9
28
N/C
nPFO
10
27
IN_BU
GPIO1
11
26
GPIO3
IN_DCDC4
12
25
CC
Thermal
13
14
15
16
17
18
19
20
21
22
23
24
L4A
L4B
DCDC4
PFI
DC34_SEL
IN_nCC
PGOOD_BU
L5
FB5
FB6
L6
SYS_BU
Pad
Not to scale
Figure 6-1. 48-Pin RSL VQFN With Exposed Thermal Pad (Top View, 6 mm × 6 mm × 1 mm With 0.4-mm
Pitch)
Table 6-1. Pin Functions
PIN
NO.
NAME
TYPE
DESCRIPTION
1
IN_DCDC1
P
2
SDA
I/O
Input supply pin for DCDC1.
3
SCL
I
Clock input for the I2C interface. Connect to pullup resistor.
4
LDO1
O
Output voltage pin for LDO1. Connect to capacitor.
5
IN_LDO1
P
Input supply pin for LDO1.
6
IN_LS3
P
Input supply pin for load switch 3.
7
LS3
O
Output voltage pin for load switch 3. Connect to capacitor.
8
PGOOD
O
Power-good output (configured as open drain). Pulled low when either DCDC1-4 or LDO1 are out of
regulation. Load switches and DCDC5-6 do not affect PGOOD pin.
9
AC_DET
I
AC monitor input and enable for DCDC1-4, LDO1 and load switches. See Section 8.4.1 for details. Tie pin to
IN_BIAS if not used.
10
nPFO
O
Power-fail comparator output, deglitched (open drain). Pin is pulled low when PFI input is below power-fail
threshold.
11
GPIO1
I/O
Pin configured as DDR reset-input (driving GPO2) or as general-purpose, open-drain output. See Section
8.3.1.14 for more information.
12
IN_DCDC4
P
Input supply pin for DCDC4.
13
L4A
P
Switch pin for DCDC4. Connect to inductor.
14
L4B
P
Switch pin for DCDC4. Connect to inductor.
15
DCDC4
P
Output voltage pin for DCDC4. Connect to capacitor.
16
PFI
I
Power-fail comparator input. Connect to resistor divider.
17
DC34_SEL
I
Power-up default selection pin for DCDC3 or DCDC4. Power-up default is programmed by a resistor
connected to ground. See Section 8.3.1.13 for resistor options.
Data line for the I2C interface. Connect to pullup resistor.
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Table 6-1. Pin Functions (continued)
PIN
NO.
6
NAME
TYPE
DESCRIPTION
18
IN_nCC
O
Output pin indicates if DCDC5 and DCDC6 are powered from main supply (IN_BU) or coin-cell battery (CC).
Pin is push-pull output. Pulled low when PMIC is powered from coin cell battery. Pulled high when PMIC is
powered from main supply (IN_BU).
19
PGOOD_BU
O
Power-good, push-pull output for DCDC5 and DCDC6. Pulled low when either DCDC5 or DCDC6 is out of
regulation. Pulled high (to DCDC6 output voltage) when both rails are in regulation.
20
L5
P
Switch pin for DCDC5. Connect to inductor.
21
FB5
I
Feedback voltage pin for DCDC5. Connect to output capacitor.
22
FB6
I
Feedback voltage pin for DCDC6. Connect to output capacitor.
23
L6
P
Switch pin for DCDC6. Connect to inductor.
24
SYS_BU
P
System voltage pin for battery-backup supply power path. Connect to 1-µF capacitor. Connecting any
external load to this pin is not recommended.
25
CC
P
Coin cell battery input. Serves as the supply to DCDC5 and DCDC6 if no voltage is applied to IN_BU. Tie this
pin to ground if it is not in use.
26
GPIO3
I/O
Pin can be configured as warm reset (negative edge) for DCDC1 and DCDC2 or as a general-purpose, opendrain output. See Section 8.3.1.14 for more details.
27
IN_BU
P
Default input supply pin for battery backup supplies (DCDC5 and DCDC6).
28
N/C
29
N/C
—
No connect. Leave pin floating.
30
LS1
O
Output voltage pin for load switch 1. Connect to capacitor.
31
IN_LS1
P
Input supply pin for load switch 1.
32
IN_LS2
P
Input supply pin for load switch 2.
33
LS2
O
Output voltage pin for load switch 2. Connect to capacitor.
34
GPO2
O
Pin configured as DDR reset signal (controlled by GPIO1) or as general-purpose output. Buffer can be
configured as push-pull or open-drain.
35
INT_LDO
P
Internal bias voltage. Connect to a 1-μF capacitor. TI does not recommended connecting any external load to
this pin.
36
IN_BIAS
P
Input supply pin for reference system.
37
IN_DCDC3
P
Input supply pin for DCDC3.
38
L3
P
Switch pin for DCDC3. Connect to inductor.
39
FB3
I
Feedback voltage pin for DCDC3. Connect to output capacitor.
40
nWAKEUP
O
Signal to SOC to indicate a power on event (active low, open-drain output).
41
FB2
I
Feedback voltage pin for DCDC2. Connect to output capacitor.
42
L2
P
Switch pin for DCDC2. Connect to inductor.
43
IN_DCDC2
P
Input supply pin for DCDC2.
44
PB
I
Push-button monitor input. Typically connected to a momentary switch to ground (active low). See Section
8.4.1 for details.
45
nINT
O
Interrupt output (active low, open drain). Pin is pulled low if an interrupt bit is set. The pin returns to Hi-Z state
after the bit causing the interrupt has been read. Interrupts can be masked.
46
PWR_EN
I
Power enable input for DCDC1-4, LDO1 and load switches. See Section 8.4.1 for details.
47
FB1
I
Feedback voltage pin for DCDC1. Connect to output capacitor.
48
L1
P
Switch pin for DCDC1. Connect to inductor.
—
Thermal Pad
P
Power ground and thermal relief. Connect to ground plane.
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7 Specifications
7.1 Absolute Maximum Ratings
Operating under free-air temperature range (unless otherwise noted).(1)
IN_BIAS, IN_LDO1, IN_LS2, IN_DCDC1, IN_DCDC2,
IN_DCDC3, IN_DCDC4
Supply voltage
TA
MIN
MAX
–0.3
7
IN_LS1, CC
–0.3
3.6
IN_LS3
–0.3
11.2
IN_BU
–0.3
5.8
Output voltage
All pins unless specified separately
–0.3
7
Source or sink
current
GPO2
6
PGOOD_BU, IN_nCC
1
Sink current
PGOOD, nWAKEUP, nINT, nPFO, SDA, GPIO1, GPIO3
Operating ambient temperature
–40
UNIT
V
V
mA
6
mA
105
°C
TJ
Junction temperature
–40
125
°C
Tstg
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC
JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±2000
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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7.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted).
MIN
NOM
MAX
UNIT
Supply voltage, IN_BIAS
2.7
5.5
V
Input voltage for DCDC1, DCDC2, DCDC3, and DCDC4
2.7
5.5
V
Supply voltage, IN_BU
2.2
5.5
V
Supply voltage, CC
2.2
3.3
V
Input voltage for LDO1
1.8
5.5
V
Input voltage for LS1
1.2
3.6
V
Input voltage for LS2
3
5.5
V
Input voltage for LS3
1.8
10
V
Output voltage for DCDC1
0.85
1.675
V
Output voltage for DCDC2
0.85
1.675
V
Output voltage for DCDC3
0.9
3.4
V
Output voltage for DCDC4
1.175
Output voltage for DCDC5
3.4
1
Output voltage for DCDC6
1.8
Output voltage for LDO1
Output current for DCDC1, DCDC2, and DCDC3
Output current for DCDC4
V
V
V
0.9
3.4
V
0
1.8
A
VIN_DCDC4 = 2.8 V
1
VIN_DCDC4 = 3.6 V
1.3
VIN_DCDC4 = 5 V
1.6
A
Output current for DCDC5 and DCDC6
0
25
mA
Output current for LDO1
0
400
mA
Output current for LS1
0
300
mA
Output current for LS2
0
920
mA
VIN_LS3 > 2.3 V
0
900
VIN_LS3 ≤ 2.3 V
0
475
Output current for LS3
mA
7.4 Thermal Information
TPS6521815
THERMAL METRIC(1)
RSL (VQFN)
UNIT
48 PINS
RθJC(top)
Junction-to-case (top)
RθJB
RθJA
°C/W
Junction-to-board
5.8
°C/W
Thermal resistance, junction-to-ambient. JEDEC 4-layer, high-K board.
30.6
°C/W
ΨJT
Junction-to-package top
0.2
°C/W
ΨJB
Junction-to-board
5.6
°C/W
RθJC(bot)
Junction-to-case (bottom)
1.5
°C/W
(1)
8
17.2
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5 Electrical Characteristics
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
INPUT VOLTAGE AND CURRENTS
VIN_BIAS
Input supply voltage range
Normal operation
2.7
5.5
EEPROM programming
4.5
5.5
Deglitch time
IOFF
OFF state current, total current
into IN_BIAS, IN_DCDCx,
IN_LDO1, IN_LS
ISUSPEND
VIN = 3.6 V; DCDC3 enabled, low-power mode, no
SUSPEND current, total current
load.
into IN_BIAS, IN_DCDCx,
All other rails disabled.
IN_LDO1, IN_LS
TJ = 0°C to 105°C
VIN = 3.6 V; All rails disabled.
TJ = 0°C to 85°C
V
5
ms
5
µA
220
µA
SYS_BU
VSYS_BU
SYS_BU voltage range
Powered from VIN_BU or VCC
CSYS_BU
Recommended SYS_BU
capacitor
Ceramic, X5R or X7R, see Table 9-3.
Tolerance
Ceramic, X5R or X7R, rated voltage ≥ 6.3 V
2.2
5.5
1
–20%
V
µF
20%
INT_LDO
VINT_LDO
Output voltage
2.5
DC accuracy
IOUT < 10 mA
IOUT
Output current range
Maximum allowable external load
ILIMIT
Short circuit current limit
Output shorted to GND
Hold-up time
Measured from VINT_LDO = to VINT_LDO = 1.8 V
All rails enabled before power off,
IN_BIAS tied to IN_DCDC1-4, IN_LDO1
VIN_BIAS = 2.8 V to 0 V in < 5 µs
No external load on INT_LDO
CINT_LDO = 1 µF, see Table 9-3.
tHOLD
COUT
Nominal output capacitor value
Ceramic, X5R or X7R, see Table 9-3.
Tolerance
Ceramic, X5R or X7R, rated voltage ≥ 6.3 V
V
–2%
2%
0
10
23
mA
150
0.1
mA
ms
1
–20%
22
µF
20%
DCDC1 (1.1-V BUCK)
VIN_DCDC1
VDCDC1
IOUT
IQ
RDS(ON)
ILIMIT
Input voltage range
VIN_BIAS > VUVLO
I2C
Output voltage range
Adjustable through
DC accuracy
2.7 V ≤ VIN ≤ 5.5 V; 0 A ≤ IOUT ≤ 1.8 A
Continuous output current
VIN_DCDC1 > 2.7 V
Quiescent current
Total current from IN_DCDC1 pin; Device not switching,
no load
High-side FET on resistance
5.5
V
0.85
1.675
V
–2%
2%
1.8
A
25
50
µA
VIN_DCDC1 = 3.6 V
230
355
Low-side FET on resistance
VIN_DCDC1 = 3.6 V
90
145
High-side current limit
VIN_DCDC1 = 3.6 V
2.8
Low-side current limit
VIN_DCDC1 = 3.6 V
3.1
mΩ
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7.5 Electrical Characteristics (continued)
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
Power-good threshold
Hysteresis
VPG
TEST CONDITIONS
MIN
TYP
88.5%
90%
STRICT = 1b
96%
96.5%
97%
STRICT = 0b
3.8%
4.1%
4.4%
STRICT = 0b
VOUT falling
VOUT rising
VOUT falling
Deglitch
VOUT rising
STRICT = 1b
0.25%
STRICT = 0b
1
STRICT = 1b
50
µs
STRICT = 0b
10
µs
STRICT = 1b
10
µs
5
ms
Time-out
Overvoltage detection threshold VOUT rising, STRICT = 1b
VOV
Hysteresis
IINRUSH
RDIS
Discharge resistor
L
103%
0.25%
Deglitch
VOUT rising, STRICT = 1b
50
Inrush current
VIN_DCDC1 = 3.6 V; COUT = 10 µF to 100 µF
Output capacitance value
ms
104%
µs
500
See Table 9-2.
Tolerance
COUT
103.5%
VOUT falling, STRICT = 1b
Nominal inductor value
MAX UNIT
91.5%
mA
150
250
350
Ω
1
1.5
2.2
µH
22
100(8)
µF
–30%
30%
Ceramic, X5R or X7R, see Table 9-3.
10
VIN_BIAS > VUVLO
2.7
5.5
V
0.85
1.675
V
–2%
2%
DCDC2 (1.1-V BUCK)
VIN_DCDC2
VDCDC2
IOUT
IQ
RDS(ON)
ILIMIT
Input voltage range
I2C
Output voltage range
Adjustable through
DC accuracy
2.7 V ≤ VIN ≤ 5.5 V; 0 A ≤ IOUT ≤ 1.8 A
Continuous output current
VIN_DCDC2 > 2.7 V
Quiescent current
Total current from IN_DCDC2 pin; device not switching,
no load
1.8
A
25
50
µA
High-side FET on resistance
VIN_DCDC2 = 3.6 V
230
355
Low-side FET on resistance
VIN_DCDC2 = 3.6 V
90
145
High-side current limit
VIN_DCDC2 = 3.6 V
2.8
Low-side current limit
VIN_DCDC2 = 3.6 V
3.1
Power-good threshold
VOUT falling
Hysteresis
VOUT rising
VPG
88.5%
90%
91.5%
STRICT = 1b
96%
96.5%
97%
STRICT = 0b
3.8%
4.1%
4.4%
0.25%
STRICT = 0b
1
ms
STRICT = 1b
50
µs
STRICT = 0b
10
µs
STRICT = 1b
10
µs
Occurs at enable of DCDC2 and after DCDC2
register write (register 0x17).
5
ms
VOUT falling
Deglitch
VOUT rising
Time-out
Overvoltage detection threshold VOUT rising, STRICT = 1b
103%
103.5%
VOV
Hysteresis
VOUT falling, STRICT = 1b
0.25%
Deglitch
VOUT rising, STRICT = 1b
50
IINRUSH
Inrush current
VIN_DCDC2 = 3.6 V; COUT = 10 µF to 100 µF
RDIS
Discharge resistor
L
10
Nominal inductor value
A
STRICT = 0b
STRICT = 1b
mΩ
See Table 9-2.
Tolerance
µs
500
mA
150
250
350
Ω
1
1.5
2.2
µH
–30%
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104%
30%
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SLDS261A – NOVEMBER 2019 – REVISED FEBRUARY 2021
7.5 Electrical Characteristics (continued)
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
COUT
Output capacitance value
TEST CONDITIONS
MIN
TYP
Ceramic, X5R or X7R, see Table 9-3.
10
22
VIN_BIAS > VUVLO
MAX UNIT
100(8)
µF
2.7
5.5
V
0.9
3.4
V
–2%
2%
DCDC3 (1.2-V BUCK)
VIN_DCDC3
Input voltage range
I2C
Output voltage range
Adjustable through
DC accuracy
2.7 V ≤ VIN ≤ 5.5 V; 0 A ≤ IOUT ≤ 1.8 A,
VIN_DCDC3 ≥ (VDCDC3 + 700 mV)
IOUT
Continuous output current
VIN_DCDC3 > 2.7 V
IQ
Quiescent current
Total current from IN_DCDC3 pin;
Device not switching, no load
High-side FET on resistance
Low-side FET on resistance
VDCDC3
RDS(ON)
ILIMIT
1.8
A
25
50
µA
VIN_DCDC3 = 3.6 V
230
345
VIN_DCDC3 = 3.6 V
100
150
High-side current limit
VIN_DCDC3 = 3.6 V
2.8
Low-side current limit
VIN_DCDC3 = 3.6 V
3
Power-good threshold
VOUT falling
Hysteresis
VPG
VOUT rising
STRICT = 0b
88.5%
90%
STRICT = 1b
95%
95.5%
96%
STRICT = 0b
3.8%
4.1%
4.4%
0.25%
1
STRICT = 1b
50
µs
STRICT = 0b
10
µs
STRICT = 1b
10
µs
Occurs at enable of DCDC3 and after DCDC3
register write (register 0x18).
5
ms
VOUT rising
Overvoltage detection threshold VOUT rising, STRICT = 1b
104%
104.5%
Hysteresis
VOUT falling, STRICT = 1b
0.25%
Deglitch
VOUT rising, STRICT = 1b
50
IINRUSH
Inrush current
VIN_DCDC3 = 3.6 V; COUT = 10 µF to 100 µF
RDIS
Discharge resistor
L
COUT
Nominal inductor value
See Table 9-2.
Tolerance
Output capacitance value
91.5%
STRICT = 0b
Deglitch
VOV
A
STRICT = 1b
VOUT falling
Time-out
mΩ
150
250
1.0
1.5
–30%
Ceramic, X5R or X7R, see Table 9-3.
10
ms
105%
µs
500
mA
350
Ω
2.2
µH
30%
22
100
µF
DCDC4 (3.3-V BUCK-BOOST) / ANALOG AND I/O
Output voltage ripple
PFM mode enabled;
4.2 V ≤ VIN ≤ 5.5 V;
0 A ≤ IOUT ≤ 1.6 A
VOUT = 3.3 V
150 mVpp
Minimum duty cycle in stepdown mode
IOUT
Continuous output current
IQ
Quiescent current
fSW
Switching frequency
18%
VIN_DCDC4 = 2.8 V, VOUT = 3.3 V
1
VIN_DCDC4 = 3.6 V, VOUT = 3.3 V
1.3
VIN_DCDC4 = 5 V, VOUT = 3.3 V
1.6
Total current from IN_DCDC4 pin; Device not
switching, no load.
25
2400
50
A
µA
kHz
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SLDS261A – NOVEMBER 2019 – REVISED FEBRUARY 2021
7.5 Electrical Characteristics (continued)
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
High-side FET on resistance
TEST CONDITIONS
VIN_DCDC3 = 3.6 V
RDS(ON)
ILIMIT
Low-side FET on resistance
VIN_DCDC3 = 3.6 V
Average switch current limit
VIN_DCDC4 = 3.6 V
Power-good threshold
VOUT falling
Hysteresis
VOUT rising
VPG
VOUT falling
Deglitch
Hysteresis
L4B to DCDC4
149
L4A to GND
142
190
144
190
L4B to GND
3000
88.5%
90%
91.5%
STRICT = 1b
95%
95.5%
96%
STRICT = 0b
3.8%
4.1%
4.4%
STRICT = 1b
0.25%
STRICT = 0b
1
ms
STRICT = 1b
50
µs
STRICT = 0b
10
µs
10
µs
Occurs at enable of DCDC4 and after DCDC4
register write (register 0x19)
5
ms
104%
104.5%
0.25%
Deglitch
VOUT rising, STRICT = 1b
50
IINRUSH
Inrush current
VIN_DCDC4 = 3.3 V ≤ VINDCDC4 ≤ 5.5 V; 40 µF ≤ COUT
≤ 100 µF
RDIS
Discharge resistor
L
See Table 9-2.
Tolerance
COUT
Output capacitance value
mΩ
mA
STRICT = 0b
VOUT falling, STRICT = 1b
Nominal inductor value
MAX UNIT
166
Overvoltage detection threshold VOUT rising, STRICT = 1b
VOV
TYP
STRICT = 1b
VOUT rising
Time-out
MIN
IN_DCDC4 to L4A
105%
µs
500
mA
150
250
350
Ω
1.2
1.5
2.2
µH
–30%
Ceramic, X5R or X7R, see Table 9-3.
40
VIN_BU = 0 V
30%
80
100
µF
2.2
3.3
V
2.2
5.5
V
DCDC5 and DCDC6 POWER PATH
VCC
DCDC5 and DCDC6 input
voltage range.
VIN_BU
DCDC5 and DCDC6 input
voltage range(1)
tRISE
VCC, VIN_BU rise time
VCC = 0 V to 3.3 V, VIN_BU = 0 V to 5.5 V
Power path switch impedance
CC to SYS_BU
VCC = 2.4 V, VIN_BU = 0 V
14.5
Power path switch impedance
IN_BU to SYS_BU
VIN_BU = 3.6 V
10.5
Forward leakage current
Into CC pin;
VCC = 3.3 V, VIN_BU = 0 V;
OFF state; FSEAL = 0b;
over full temperature range
Reverse leakage current
Out of CC pin;
VCC = 1.5 V; VIN_BU = 5.5 V;
over full temperature range
RCC
Acceptable CC source
impedance
IOUT, DCDC5 < 10 µA;
IOUT, DCDC6 < 10 µA
IQ
Quiescent current
Average current into CC pin; RECOVERY or OFF
state; VIN_BU = 0 V; VCC = 2.4 V; DCDC5 and
DCDC6 enabled, no load TJ = 25°C
350
nA
QINRUSH
Inrush charge
VIN_BIAS = decaying; CC = 3 V; CSYS_BU = 1 µF;
SYS_BU = 2.3 V to 3 V; CCseries_resist = 10 Ω CCC =
4.7 µF
720
nC
RDS(ON)
ILEAK
12
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30
µs
Ω
50
300
nA
500
1000
Ω
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SLDS261A – NOVEMBER 2019 – REVISED FEBRUARY 2021
7.5 Electrical Characteristics (continued)
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
DCDC5 (1-V BATTERY BACKUP SUPPLY)
Output voltage
VDCDC5
DC accuracy
1
–2.5%
2.5%
2.7 V ≤ VIN_BU ≤ 5.5 V
1.5 µA ≤ IOUT ≤ 25 mA
0°C ≤ TA < 105°C
–2%
2%
–2.5%
2.5%
2.2 V ≤ VCC ≤ 3.3 V; VIN_BU = 0;
1.5 µA ≤ IOUT ≤ 100 µA
Output voltage ripple
IOUT
Continuous output current
L = 10 µH; COUT = 22 µF; 100-µA load, occurs during
band-gap sampling
32(9) mVpp
2.2 V ≤ VCC ≤ 3.3 V
VIN_BU = 0 V
10
100
µA
25
mA
2.7 V ≤ VIN_BU ≤ 5.5 V
RDS(ON)
ILIMIT
VPG
L
COUT
V
2.7 V ≤ VIN_BU ≤ 5.5 V;
1.5 µA ≤ IOUT ≤ 25 mA
–40°C ≤ TA < 0°C
High-side FET on resistance
VIN_BU = 2.8 V
2.5
3.5
Low-side FET on resistance
VIN_BU = 2.8 V
2
3
High-side current limit
VIN_BU = 2.8 V
50
Power-good threshold
VOUT falling
Hysteresis
VOUT rising
Nominal inductor value
Chip inductor, see Table 9-3.
Tolerance
Output capacitance value
Ceramic, X5R or X7R, see Table 9-3.
Tolerance
79%
85%
Ω
mA
91%
6%
4.7
10
22
–30%
30%
20(10)
47
–20%
20%
µH
µF
DCDC6 (1.8-V BATTERY BACKUP SUPPLY)
VDCDC6
Output voltage
VDCDC6
Output voltage ripple
L = 10 µH; COUT = 22 µF; 100-µA load
1.8
IOUT
Continuous output current
2.2 V ≤ VCC ≤ 3.3 V
VIN_BU = 0 V
10
100
µA
25
mA
2.7 V ≤ VIN_BU ≤ 5.5 V
RDS(ON)
ILIMIT
VPG
L
COUT
V
30(9) mVpp
High-side FET on resistance
VIN_BU = 3 V
2.5
3.5
Low-side FET on resistance
VIN_BU = 3 V
2
3
High-side current limit
VIN_BU = 3 V
50
Power-good threshold
VOUT falling
Hysteresis
VOUT rising
Nominal inductor value
Chip inductor, see Table 9-3
Tolerance
Output capacitance value
87%
Tolerance
mA
95%
3%
4.7
–30%
Ceramic, X5R or X7R, see Table 9-3
91%
Ω
10
22
µH
30%
20(10)
47
–20%
20%
µF
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SLDS261A – NOVEMBER 2019 – REVISED FEBRUARY 2021
7.5 Electrical Characteristics (continued)
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
LDO1 (1.8-V LDO)
VIN_LDO1
Input voltage range
VIN_BIAS > VUVLO
IQ
Quiescent current
No load
Output voltage range
Adjustable through I2C
DC accuracy
VOUT + 0.2 V ≤ VIN ≤ 5.5 V; 0 A ≤ IOUT ≤ 200 mA
VOUT
200
400
Short circuit current limit
Output shorted to GND
Dropout voltage
IOUT = 100 mA, VIN = 3.6 V
VOUT falling
Power-good threshold
Hysteresis, VOUT rising
VOUT falling
Deglitch
VOUT rising
445
Deglitch
RDIS
Discharge resistor
COUT
Output capacitance value
550
STRICT = 0b
86%
90%
94%
STRICT = 1b
95%
95.5%
96%
STRICT = 0b
3%
4%
5%
STRICT = 1b
V
mA
mA
200
mV
0.25%
STRICT = 0b
1
ms
STRICT = 1b
50
µs
STRICT = 0b
10
µs
STRICT = 1b
10
µs
5
ms
Occurs at enable of LDO and after LDO register
write (register 0x1B)
Overvoltage detection threshold VOUT rising, STRICT = 1b
VOV
3.4
2%
0
VDO
Hysteresis
0.9
–2%
0
ILIMIT
V
µA
VIN_LDO1 > 2.7 V, VOUT = 1.8 V
Output current range
Time-out
5.5
35
VIN_LDO1 – VDO = VOUT
IOUT
VPG
1.8
104%
104.5%
105%
VOUT falling, STRICT = 1b
0.25%
VOUT rising, STRICT = 1b
50
µs
VOUT falling, STRICT = 1b
1
ms
150
Ceramic, X5R or X7R
250
380
Ω
22
100
µF
3.6
V
LOAD SWITCH 1 (LS1)
VIN_LS1
RDS(ON)
Input voltage range
Static on resistance
VIN_BIAS > VUVLO
110
VIN_LS1 = 1.8 V, IOUT = 300 mA,
DDR2, LPDDR, MDDR at 266 MHz over full
temperature range
110
VIN_LS1 = 1.5 V, IOUT = 300 mA,
DDR3 at 333 MHz over full temperature range
110
VIN_LS1 = 1.35 V, IOUT = 300 mA,
DDR3L at 333 MHz over full temperature range
110
VIN_LS1 = 1.2 V, IOUT = 200 mA,
LPDDR2 at 333 MHz over full temperature range
150
ILIMIT
Short circuit current limit
Output shorted to GND
tBLANK
Interrupt blanking time
Output shorted to GND until interrupt is triggered.
RDIS
Internal discharge resistor at
output(2)
LS1DCHRG = 1
TOTS
COUT
14
1.2
VIN_LS1 = 3.3 V, IOUT = 300 mA, over full temperature
range
Overtemperature shutdown(3)
350
Nominal output capacitance
value
mA
15
ms
150
250
380
125
132
139
Hysteresis
10
Ceramic, X5R or X7R, see Table 9-3.
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10
mΩ
100
Ω
°C
µF
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SLDS261A – NOVEMBER 2019 – REVISED FEBRUARY 2021
7.5 Electrical Characteristics (continued)
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
LOAD SWITCH 2 (LS2)
VIN_LS2
VUVLO
RDS(ON)
Input voltage range
VIN_BIAS > VUVLO
Undervoltage lockout
Measured at IN_LS2. Supply falling(4)
3
Hysteresis
Input voltage rising
Static on resistance
VIN_LS2 = 5 V, IOUT = 500 mA, over full temperature
range
2.48
2.6
5.5
V
2.7
V
170
mV
500
LS2ILIM[1:0] = 00b
94
126
ILIMIT
Short circuit current limit
Output shorted to GND; VIN_LS2 LS2ILIM[1:0] = 01b
≥4V
LS2ILIM[1:0] = 10b
188
251
465
631
LS2ILIM[1:0] = 11b
922
ILEAK
Reverse leakage current
VLS2 > VIN_LS2 + 1 V
12
tBLANK
Interrupt blanking time
Output shorted to GND until interrupt is triggered
15
RDIS
Internal discharge resistor at
output(2)
LS2DCHRG = 1b
TOTS
COUT
Overtemperature shutdown(4)
Nominal output capacitance
value
30
µA
ms
250
380
125
132
139
10
Ceramic, X5R or X7R, see Table 9-3.
mA
1290
150
Hysteresis
mΩ
Ω
°C
1
100
µF
1.8
10
V
LOAD SWITCH 3 (LS3)
VIN_LS3
RDS(ON)
Input voltage range
Static on resistance
VIN_BIAS > VUVLO
VIN_LS3 = 9 V, IOUT= 500 mA, over full temperature
range
440
VIN_LS3 = 5 V, IOUT= 500 mA, over full temperature
range
526
VIN_LS3 = 2.8 V, IOUT= 200 mA, over full temperature
range
656
VIN_LS3 = 1.8 V, IOUT= 200 mA, over full temperature
range
910
LS3ILIM[1:0] = 00b
VIN_LS3 > 2.3 V,
Output shorted to GND
ILIMIT
Short circuit current limit
VIN_LS3 ≤ 2.3 V,
Output shorted to GND
98
126
LS3ILIM[1:0] = 01b
194
253
LS3ILIM[1:0] = 10b
475
738
LS3ILIM[1:0] = 11b
900
1234
LS3ILIM[1:0] = 00b
98
126
LS3ILIM[1:0] = 01b
194
253
LS3ILIM[1:0] = 10b
475
738
tBLANK
Interrupt blanking time
Output shorted to GND until interrupt is triggered.
RDIS
Internal discharge resistor at
output(2)
LS3DCHRG = 1
TOTS
COUT
mΩ
Overtemperature shutdown(4)
15
ms
650
1000
1500
Ω
125
132
139
°C
Hysteresis
Nominal output capacitance
value
10
Ceramic, X5R or X7R, see Table 9-3.
mA
1
100
°C
220
µF
BACKUP BATTERY MONITOR
VTH
Comparator threshold
Ideal level
3
V
Good level
2.6
V
Low level
Accuracy
2.3
–3%
V
3%
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SLDS261A – NOVEMBER 2019 – REVISED FEBRUARY 2021
7.5 Electrical Characteristics (continued)
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
TEST CONDITIONS
RLOAD
Load impedance
Applied from CC to GND during comparison.
tDLY
Measurement delay
RLOAD is connected during delay time. Measurement
is taken at the end of delay.
MIN
TYP
70
100
MAX UNIT
130
600
kΩ
ms
I/O LEVELS AND TIMING CHARACTERISTICS
PGDLY
PGOOD delay time
PGDLY[1:0] = 00b
10
PGDLY[1:0] = 01b
20
PGDLY[1:0] = 10b
50
PGDLY[1:0] = 11b
PB input
AC_DET input
tDG
Deglitch time
PWR_EN input
GPIO1
GPIO3
tRESET
Reset time
PB input held low
150
Rising edge
100
ms
Falling edge
50
ms
Rising edge
100
µs
Falling edge
10
ms
Rising edge
10
ms
Falling edge
100
µs
Rising edge
1
ms
Falling edge
1
ms
Rising edge
5
µs
Falling edge
5
µs
TRST = 0b
8
TRST = 1b
15
SCL, SDA, GPIO1, and GPIO3
VIH
High level input voltage
Low level input voltage
VOH
0.66 ×
IN_BIAS
AC_DET, PB
Low level output voltage
SCL, SDA, PWR_EN, AC_DET, PB, GPIO1, and
GPIO3
0
0.4
GPO2; ISOURCE = 5 mA; GPO2_BUF = 1
VIN_LS1 –
0.3
VIN_LS1
PGOOD_BU; ISOURCE = 100 µA
VDCDC6 –
10 mV
Hysteresis
0
0.3
nPFO; ISINK = 2 mA
0
0.35
PGOOD_BU; ISINK = 100 µA
0
Deglitch
IDC34_SEL
16
DC34_SEL bias current
V
0.3
800
Input rising
Accuracy
V
V
nWAKEUP, nINT, SDA, PGOOD, GPIO1, GPO2, and
GPIO3; ISINK = 2 mA
Power-fail comparator threshold Input falling
VPFI
V
1.3
High level output voltage
VOL
s
1.3
PWR_EN
VIL
ms
mV
40
–4%
mV
4%
Input falling
25
µs
Input rising
10
ms
Enabled only at power-up.
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9.05
10
11.93
µA
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SLDS261A – NOVEMBER 2019 – REVISED FEBRUARY 2021
7.5 Electrical Characteristics (continued)
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
VDC34_SEL
RDC34_SEL
DCDC3 and DCDC4 power-up
default selection thresholds
DCDC3 and DCDC4 power-up
default selection resistor values
IBIAS
Input bias current
ILEAK
Pin leakage current
TEST CONDITIONS
MIN
TYP
Threshold 1
100
Threshold 2
163
Threshold 3
275
Threshold 4
400
Threshold 5
575
Threshold 6
825
Threshold 7
1200
MAX UNIT
mV
Setting 0
0
0
7.7
Setting 1
11.8
12.1
12.4
Setting 2
19.5
20
20.5
Setting 3
30.9
31.6
32.3
Setting 4
44.4
45.3
46.3
Setting 5
64.8
66.1
67.3
Setting 6
93.6
95.3
97.2
Setting 7
146
150
SCL, SDA, GPIO1(5), GPIO3 (5); VIN = 3.3 V
0.01
kΩ
1
µA
PB, AC_DET, PFI; VIN = 3.3 V
500
nA
nINT, nWAKEUP, nPFO, PGOOD, PWR_EN,
GPIO1(6), GPO2(7), GPIO3(6)
VOUT = 3.3 V
500
nA
OSCILLATOR
Oscillator frequency
ƒOSC
Frequency accuracy
2400
TJ = –40°C to +105°C
–12%
kHz
12%
OVERTEMPERATURE SHUTDOWN
TOTS
TWARN
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
Overtemperature shutdown
Increasing junction temperature
Hysteresis
Decreasing junction temperature
High-temperature warning
Increasing junction temperature
Hysteresis
Decreasing junction temperature
135
145
155
20
90
100
15
110
°C
°C
IN_BU has priority over CC input.
Discharge function disabled by default.
Switch is temporarily turned OFF if temperature exceeds OTS threshold.
Switch is temporarily turned OFF if input voltage drops below UVLO threshold.
Configured as input.
Configured as output.
Configured as open-drain output.
500-µF of remote capacitance can be supported for DCDC1 and DCDC2.
For PHP package: 160 mVpp at -40°C, and 120 mVpp from 25°C to 105°C.
For PHP package: 40 µF.
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SLDS261A – NOVEMBER 2019 – REVISED FEBRUARY 2021
7.6 Timing Requirements
MIN
Serial clock frequency
tHD;STA
Hold time (repeated) START condition. After this period, the
first clock pulse is generated.
tLOW
LOW period of the SCL clock
tHIGH
HIGH period of the SCL clock
tSU;STA
Set-up time for a repeated START condition
tHD;DAT
Data hold time
tSU;DAT
Data set-up time
tr
Rise time of both SDA and SCL signals
tf
Fall time of both SDA and SCL signals
tSU;STO
Set-up time for STOP condition
tBUF
Bus free time between STOP and START condition
tSP
Pulse width of spikes which must be suppressed by the input
filter
Cb
Capacitive load for each bus line
18
MAX
100
fSCL
(1)
(2)
NOM
UNIT
kHz
400
SCL = 100 kHz
4
µs
SCL = 400 kHz
600
ns
SCL = 100 kHz
4.7
SCL = 400 kHz
1.3
SCL = 100 kHz
4
SCL = 400 kHz(1)
1
µs
µs
SCL = 100 kHz
4.7
µs
SCL = 400 kHz
600
ns
SCL = 100 kHz
0
3.45
µs
SCL = 400 kHz
0
900
ns
SCL = 100 kHz
250
SCL = 400 kHz
100
ns
SCL = 100 kHz
1000
SCL = 400 kHz
300
SCL = 100 kHz
300
SCL = 400 kHz
300
ns
ns
SCL = 100 kHz
4
µs
SCL = 400 kHz
600
ns
SCL = 100 kHz
4.7
SCL = 400 kHz
1.3
SCL = 100 kHz
—(2)
—(2)
SCL = 400 kHz
0
50
µs
SCL = 100 kHz
400
SCL = 400 kHz
400
ns
pF
The SCL duty cycle at 400 kHz must be > 40%.
The inputs of I2C devices in Standard-mode do not require spike suppression.
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7.7 Typical Characteristics
0.3%
0.25%
0.2%
0.15%
0.1%
0.05%
0
-0.05%
-0.1%
-0.15%
-0.2%
-0.25%
-0.3%
-0.35%
-0.4%
VIN = 3.6 V
VIN = 5 V
Accuracy
Accuracy
At TJ = 25°C unless otherwise noted.
0
0.2
0.4
0.6
0.8
1
1.2
Output Current (A)
1.4
1.6
0.15%
0.1%
0.05%
0
-0.05%
-0.1%
-0.15%
-0.2%
-0.25%
-0.3%
-0.35%
-0.4%
-0.45%
-0.5%
-0.55%
VIN = 3.6 V
VIN = 5 V
0
1.8
0.2
0.4
D001
1.6
1.8
D002
Figure 7-2. DCDC2 Accuracy
Figure 7-1. DCDC1 Accuracy
0.75%
0.1%
VIN = 3.6 V
VIN = 5 V
0.05%
VIN = 3.6 V
VIN = 5 V
0.5%
0.25%
Accuracy
0
Accuracy
1.4
VOUT = 1.1 V
VOUT = 1.1 V
-0.05%
-0.1%
-0.15%
0
-0.25%
-0.5%
-0.75%
-0.2%
-1%
-0.25%
-1.25%
0
0.2
0.4
0.6
0.8
1
1.2
Output Current (A)
1.4
1.6
1.8
0
0.2
0.4
D003
1.4%
VIN = 3.6 V
VIN = 5 V
1%
0.8%
Accuracy
0.6%
0.4%
0.2%
0
-0.2%
-0.4%
-0.6%
-0.8%
0
0.005
0.01
0.015
Output Current (A)
1.2
1.4
1.6
D004
Figure 7-4. DCDC4 Accuracy
Figure 7-3. DCDC3 Accuracy
1.2%
0.6
0.8
1
Output Current (A)
VOUT = 3.3 V
VOUT = 1.2 V
Accuracy
0.6
0.8
1
1.2
Output Current (A)
0.02
0.025
0.05%
0
-0.05%
-0.1%
-0.15%
-0.2%
-0.25%
-0.3%
-0.35%
-0.4%
-0.45%
-0.5%
-0.55%
-0.6%
VIN = 3.6 V
VIN = 5 V
0
0.005
D005
0.01
0.015
Output Current (A)
0.02
0.025
D006
VOUT = 1.8 V
VOUT = 1 V
Figure 7-5. DCDC5 Accuracy
Figure 7-6. DCDC6 Accuracy
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8 Detailed Description
8.1 Overview
The TPS6521815 provides three step-down converters, three load switches, three general-purpose I/Os, two
battery backup supplies, one buck-boost converter, and one LDO. The system can be supplied by a regulated 5V supply. A coin-cell battery can be added to supply the two always-on backup supplies. The device is
characterized across a –40°C to +105°C temperature range, which makes it suitable for various industrial
applications.
The I2C interface provides comprehensive features for using TPS6521815. All rails, load switches , and GPIOs
can be enabled and disabled. Voltage thresholds for the UVLO and supervisor can be customized. Power-up
and power-down sequences can also be programmed through I2C. Interrupts for overtemperature, overcurrent,
and undervoltage can be monitored for the load-switches (LSx).
The integrated voltage supervisor monitors DCDC 1-4 and LDO1. It has two settings; the standard settings only
monitor for undervoltage, while the strict settings implement tight tolerances on both undervoltage and
overvoltage. A power-good signal is provided to report the regulation state of the five rails.
The three hysteretic step-down converters can each supply up to 1.8 A of current. The default output voltages for
each converter can be adjusted through the I2C interface. DCDC1 and DCDC2 features dynamic voltage scaling
with an adjustable slew rate. The step-down converters operate in a low power mode at light load, and can be
forced into power mode (PWM) operation for noise sensitive applications.
The battery backup supplies consist of two low power step-down converters optimized for very light loads and
are monitored with a separate power-good signal (PGOOD_BU). The converters can be configured to operate as
always-on supplies with the addition of a coin cell battery. The state of the battery can be monitored over I2C.
20
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8.2 Functional Block Diagram
PGOOD_BU
To SOC
VDD_10 (1 V)
Battery-backup
22 …F domain supply
L5 10 µH
DCDC6 (1.8 V)
DCDC5_PG
DCDC6_PG
DCDC5
FB5
DCDC6 (1.8 V)
IN_nCC
To SOC
DCDC6
FB6
IN_BU
2.7-V to 5.5-V
system power
10
Coin
cell
CC
SYS_BU
+
1 …F
4.7 …F 4.7 …F
±
From 1.8-V to 5.5-V
supply
IN_LDO1
0.9-V to 3.3-V analog supply
(adjustable, default 1.8 V)
LDO1
Always-on coin-cell battery backup supplies
LS2
LDO1
IN_LS2
From 3-V to 5.5-V
supply
LS2
100-mA / 500-mA
load switch
10 …F
10 …F
IN_LS1
From 1.2-V to 3.3-V
supply
LS1
200-mA load switch
LS3
LS1
IN_LS3
From 1.8-V to 10-V
supply
LS3
500-mA load
switch
10 …F
10 …F
IN_DCDC3
From 2.7-V to 5.5-V
system power
IN_DCDC1
4.7 …F
4.7 …F
FB3
10 …F
DCDC3
DCDC1
IN_DCDC4
From 2.7-V to 5.5-V
system power
4.7 …F
FB1
1.1-V core supply
(adjustable)
10 …F
IN_DCDC2
From 2.7-V to 5.5-V
system power
4.7 …F
L4A
L2 10 µH
L4B
DCDC4
DCDC2
FB2
1.1-V MPU supply
(adjustable)
10 …F
DCDC4
3.3-V I/O supply
(adjustable)
IN_BIAS
47 …F
VSELECT
Input Power
VIO
VREF
10
1 …F
Supervisor
and up,
down
sequencer
VIO VDD_18
(1.8 V / (DCDC6)
3.3 V)
+
±
OD
2
10
SDA
PWR_EN
IC
GPIO1
AC_DET
IN_BIAS
100 k
VIO
(1.8 V /
3.3 V)
To SOC
To SOC
To SOC
DIGITAL
IN_LS1
Momentary push-button
VIO
(1.8 V /
3.3 V)
To SOC
nWAKEUP
nINT
OD
100 k
IN_BIAS
100 k
nPFO
PGOOD
OD
SCL
From SOC
From SOC
INT_LDO
BIAS
VDCDC1
VDCDC2
VDCDC3
VDCDC4
LDO1
OD
PFI
VIO
From 2.7-V to 5.5-V
system power
100 nF
DC34_SEL
From external
charger
From 2.7-V to 5.5-V
system power
L1 10 µH
L3
1.5-V DDR3 supply
(adjustable)
From SOC
VDD_18 (1.8 V)
Battery-backup
domain supply
22 …F
L6 10 µH
OD
GPIO2
OD
GPIO3
PB
From SOC
To DDR3 memory
From SOC
OD
Thermal
Pad
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8.3 Feature Description
8.3.1 Wake-Up and Power-Up and Power-Down Sequencing
The TPS6521815 has a predefined power-up and power-down sequence, which does not change in a typical
application. The user can define custom sequences with I2C. The power-up sequence is defined by a series of
ten strobes and nine delay times. Each output rail is assigned to a strobe to determine the order of enabling
rails. A single rail is assigned to only one strobe, but multiple rails can be assigned to the same strobe. The
delay times between strobes are between 2 ms and 5 ms.
8.3.1.1 Power-Up Sequencing
When the power-up sequence initiates, STROBE 1 occurs, and any rail assigned to this strobe is enabled. After
a delay time of DLY1, STROBE 2 occurs and the rail assigned to this strobe is powered up. The sequence
continues until all strobes occur and all DLYx times execute. Strobe assignments and delay times are defined in
the SEQx registers, and are changed under I2C control. The power-up sequence executes if one of the following
events occurs:
• From the OFF state:
– The push-button (PB) is pressed (falling edge on PB) or
– The AC_DET pin is pulled low (falling edge) or
– The PWR_EN is asserted (driven to high-level) or
– The main power is connected (IN_BIAS) and AC_DET is grounded and
– The device is not in undervoltage lockout (UVLO) or overtemperature shutdown (OTS).
• From the PRE_OFF state:
– The PB is pressed (falling edge on PB) or
– The AC_DET pin is pulled low (falling edge) or
– The PWR_EN is asserted (driven to high-level) and
– The device is not in UVLO or OTS.
• From the SUSPEND state:
– The PB is pressed (falling edge on PB) or
– The AC_DET pin is pulled low (falling edge) or
– The PWR_EN pin is pulled high (level sensitive) and
– The device is not in UVLO or OTS.
When a power-up event is detected, the device enters a WAIT_PWR_EN state and triggers the power-up
sequence. The device remains in WAIT_PWR_EN as long as the PWR_EN and either the PB or AC_DET pin
are held low. If both, the PB and AC_DET return to logic-high state and the PWR_EN pin has not been asserted
within 20 s of entering WAIT_PWR_EN state, the power-down sequence is triggered and the device returns to
OFF state. Once PWR_EN is asserted, the device advances to ACTIVE state, which is functionally equivalent to
WAIT_PWR_EN. However, the AC_DET pin is ignored and power-down is controlled by the PWR_EN pin only.
Rails not assigned to a strobe (SEQ = 0000b) are not affected by power-up and power-down sequencing and
remain in their current ON or OFF state regardless of the sequencer. A rail can be enabled and disabled at any
time by setting the corresponding enable bit in the ENABLEx register, with the exception that the ENABLEx
register cannot be accessed while the sequencer is active. Enable bits always reflect the current enable state of
the rail. For example, the sequencer sets and resets the enable bits for the rails under its control.
Note
The power-up sequence is defined by strobes and delay times, and can be triggered by the PB,
AC_DET (not shown, same as PB), or PWR_EN pin.
22
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PB (input)
nWAKEUP
(output)
PWR_EN
(input)
DLY1
DLY2
DLY3
DLY4
DLY5
DLY6
DLY7
DLY8
DLY9
STROBE 1
STROBE 2
STROBE 3
STROBE 4
STROBE 5
STROBE 6
STROBE 7
STROBE 8
STROBE 9 STROBE 10
SEQ = 0001b SEQ = 0010b SEQ = 0011b SEQ = 0100b SEQ = 0101b SEQ = 0110b SEQ = 0111b SEQ = 1000b SEQ = 1001b SEQ = 1010b
Push-button deglitch time is not shown.
Figure 8-1. Power-Up Sequences from OFF or SUSPEND State; PB is Power-Up Event
PB (input)
nWAKEUP
(output)
PWR_EN
(input)
DLY1
DLY2
DLY3
DLY4
DLY5
DLY6
DLY7
DLY8
DLY9
STROBE 1
STROBE 2
STROBE 3
STROBE 4
STROBE 5
STROBE 6
STROBE 7
STROBE 8
STROBE 9 STROBE 10
SEQ = 0001b SEQ = 0010b SEQ = 0011b SEQ = 0100b SEQ = 0101b SEQ = 0110b SEQ = 0111b SEQ = 1000b SEQ = 1001b SEQ = 1010b
Figure 8-2. Power-Up Sequences from SUSPEND State; PWR_EN is Power-Up Event
FAULT Recovery
PB (input)
nWAKEUP
(output)
PWR_EN
(input)
DLY1
DLY2
DLY3
DLY4
DLY5
DLY6
DLY7
DLY8
DLY9
STROBE 1
STROBE 2
STROBE 3
STROBE 4
STROBE 5
STROBE 6
STROBE 7
STROBE 8
STROBE 9 STROBE 10
SEQ = 0001b SEQ = 0010b SEQ = 0011b SEQ = 0100b SEQ = 0101b SEQ = 0110b SEQ = 0111b SEQ = 1000b SEQ = 1001b SEQ = 1010b
Figure 8-3. Power-Up Sequences from RECOVERY State
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8.3.1.2 Power-Down Sequencing
By default, the power-down sequence follows the reverse of the power-up sequence. When the power-down
sequence is triggered, STROBE 10 occurs and any rail assigned to STROBE 10 is shut down and its discharge
circuit is enabled. After a delay time of DLY9, STROBE 9 occurs and any rail assigned to it is shut down and its
discharge circuit is enabled. The sequence continues until all strobes occur and all DLYx times execute. The
DLYx times are extended by a factor of 10x to provide ample time for discharge, and preventing output voltages
from crossing during shut-down. The DLYFCTR bit is applied globally to all power-down delay times. Regardless
of the DLYx and DLYFCTR settings, the PMIC enters OFF, SUSPEND, or RECOVERY state 500 ms after the
power-down sequence initiates, to ensure that the discharge circuits remain enabled for a minimum of 150 ms
before the next power-up sequence starts.
A power-down sequence executes if one of the following events occurs:
• The device is in the WAIT_PWR_EN state, the PB and AC_DET pins are high, PWR_EN is low, and the 20-s
timer has expired.
• The device is in the ACTIVE state and the PWR_EN pin is pulled low.
• The device is in the WAIT_PWR_EN, ACTIVE, or SUSPEND state and the push-button is held low for > 8 s
(15 s if TRST = 1b).
• A fault occurs in the device (OTS, UVLO, PGOOD failure).
When transitioning from ACTIVE to SUSPEND state, the rails not controlled by the power-down sequencer
maintains the same ON/OFF state in SUSPEND state that it had in ACTIVE state. This allows for the selected
power rails to remain powered up when in the SUSPEND state.
When transitioning to the OFF or RECOVERY state, rails not under sequencer control are shut-down as follows:
• DCDC1, DCDC2, DCDC3, DCDC4, LDO1, and LS1 shut down at the beginning of the power-down
sequence, if not under sequencer control (SEQ = 0b).
• LS2 and LS3 shut down as the state machine enters an OFF or RECOVERY state; 500 ms after the powerdown sequence is triggered.
If the supply voltage on IN_BIAS drops below 2.5 V, the digital core is reset and all power rails are shut down
instantaneously and are pulled low to ground by their internal discharge circuitry (DCDC1-4, and LDO1). The
amount of time the discharge circuitry remains active is a function of the INT_LDO hold up time (see Section
8.3.1.6 for more details).
8.3.1.3 Strobe 1 and Strobe 2
STROBE 1 and STROBE 2 are dedicated to DCDC5 and DCDC6 which are always-on; powered up as soon as
the device exits the OFF state, and ON in any other state. STROBE 1 and STROBE 2 options are available only
for DCDC5 and DCDC6, not for any other rails.
STROBE 1 and STROBE 2 occur in every power-up sequence, regardless if the rail is already powered up. If the
rail is not to be powered up, its respective strobe setting must be set to 0x00.
When a power-down sequence initiates, STROBE 1 and STROBE 2 occur only if the FSEAL bit is 0b.
Otherwise, both strobes are omitted and DCDC5 and DCDC6 maintain state.
Note
The power-down sequence follows the reverse of the power-up sequence. STROBE2 and STROBE1
are executed only if FSEAL bit is 0b.
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PB (input)
nWAKEUP
(output)
PWR_EN
(input)
DLY9
DLY8
DLY7
DLY6
DLY5
DLY4
DLY3
DLY2
DLY1
STROBE 10 STROBE 9
STROBE 8
STROBE 7
STROBE 6
STROBE 5
STROBE 4
STROBE 3
STROBE 2
STROBE 1
SEQ = 1010b SEQ = 1001b SEQ = 1000b SEQ = 0111b SEQ = 0110b SEQ = 0101b SEQ = 0100b SEQ = 0011b SEQ = 0010b SEQ = 0001b
Figure 8-4. Power-Down Sequences to OFF State; PWR_EN is Power-Down Event; FSEAL = 0b
PB (input)
nWAKEUP
(output)
PWR_EN
(input)
DLY9
DLY8
DLY7
DLY6
DLY5
DLY4
DLY3
STROBE 10 STROBE 9
STROBE 8
STROBE 7
STROBE 6
STROBE 5
STROBE 4
STROBE 3
SEQ = 1010b SEQ = 1001b SEQ = 1000b SEQ = 0111b SEQ = 0110b SEQ = 0101b SEQ = 0100b SEQ = 0011b
STROBE2 and STROBE1 are not shown.
Figure 8-5. Power-Down Sequences to SUSPEND State; PWR_EN is Power-Down Event; FSEAL = 1b
PB (input)
PWR_EN
(input)
FAULT
nWAKEUP
(output)
DLY9
DLY8
DLY7
DLY6
DLY5
DLY4
DLY3
STROBE 10 STROBE 9
STROBE 8
STROBE 7
STROBE 6
STROBE 5
STROBE 4
STROBE 3
SEQ = 1010b SEQ = 1001b SEQ = 1000b SEQ = 0111b SEQ = 0110b SEQ = 0101b SEQ = 0100b SEQ = 0011b
STROBE2 and STROBE1 are not shown.
Figure 8-6. Power-Down Sequences to RECOVERY State; TSD or UV is Power-Down Event; FSEAL = 1b
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8.3.1.4 Supply Voltage Supervisor and Power-Good (PGOOD)
Power-good (PGOOD) is an open-drain output of the built-in voltage supervisor that monitors DCDC1, DCDC2,
DCDC3, DCDC4, and LDO1. The output is Hi-Z when all enabled rails are in regulation and driven low when one
or more rails encounter a fault which brings the output voltage outside the specified tolerance range. In a typical
application PGOOD drives the reset signal of the SOC.
The supervisor has two modes of operation, controlled by the STRICT bit. With the STRICT bit set to 0, all
enabled rails of the five regulators are monitored for undervoltage only with relaxed thresholds and deglitch
times. With the STRCT bit set to 1, all enabled rails of the five regulators are monitored for undervoltage and
overvoltage with tight limits and short deglitch times. Table 8-1 summarizes these details.
Table 8-1. Supervisor Characteristics Controlled by the STRICT Bit
PARAMETER
Undervoltage
monitoring
Overvoltage
monitoring
STRICT = 0b (TYP)
STRICT =1b (TYP)
Threshold (output falling)
90%
96.5% (DCDC1 and DCDC2)
95.5% (DCDC3, DCDC4, and LDO1)
Deglitch (output falling)
1 ms
50 µs
Deglitch (output rising)
10 µs
10 µs
Threshold (output falling)
N/A
103.5% (DCDC1 and DCDC2)
104.5% (DCDC3, DCDC4, and
LDO1)
Deglitch (output falling)
N/A
1 ms
Deglitch (output rising)
N/A
50 µs
Overvoltage threshold
(output rising)
LDO1
Hysteresis
Undervoltage threshold
(output falling)
Hysteresis
Power-good comparator
output (internal signal)
Voltage droop has no effect on
PGOOD output if duration is
less than deglitch time.
Voltage droop has no effect on
PGOOD output if duration is
less than deglitch time.
PGOOD
Deglitch time
Figure 8-7. Definition of Undervoltage, Overvoltage Thresholds, Hysteresis, and Deglitch Times
The following rules apply to the PGOOD output:
• The power-up default state for THE PGOOD is low. When all rails are disabled, the PGOOD output is driven
low.
• Only enabled rails are monitored. Disabled rails are ignored.
• Power-good monitoring of a particular rail starts 5 ms after the rail is enabled and is continuously monitored
thereafter. This allows the rail to power-up.
• The PGOOD is delayed by PGDLY time after the sequencer is finished and the last rail is enabled.
• If an enabled rail is continuously outside the monitoring threshold for longer than the deglitch time, then the
PGOOD is pulled low, and all rails are shut-down following the power-down sequence. PGDLY does not
apply.
• Disabling a rail manually by resetting the DCx_EN or LDO1_EN bit has no effect on the PGOOD pin. If all
rails are disabled, the PGOOD is driven low as the last rail is disabled.
• If the power-down sequencer is triggered, PGOOD is driven low.
• The PGOOD is driven low in the SUSPEND state, regardless of the number of rails that are enabled.
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Figure 8-8 shows a typical power-up sequence and PGOOD timing.
VSYS
5 s (maximum)
PB
nWAKEUP
PWR_EN
(deglitched)
LDO1
DLY1 + DLY2
5 ms
DLY4 + DLY3
PG LDO1
(internal)
DCDC3
FAULT
DLY3 + DLY4
5 ms
DLY6 + DLY5
PG DCDC3
(internal)
DCDC4
DLY5 + DLY6
5 ms
DLY7
PG DCDC4
(internal)
DCDC1
DLY7
5 ms
DLY8
PG DCDC1
(internal)
DLY8
DCDC2
5 ms
DLY9
PG DCDC2
(internal)
PG_DLY
PGOOD
A. Sequence shown for TPS65218D0 variant. For other TPS65218xx variants, refer to registers SEQ1-7 in Section 8.6.4 for factoryprogrammed sequence order and timing.
Figure 8-8. Typical Power-Up Sequence of the Main Output Rails for TPS65218D0
8.3.1.5 Backup Supply Power-Good (PGOOD_BU)
PGOOD_BU is a push-pull output indicating if DCDC5 and DCDC6 are in regulation. The output is driven to high
when both rails are in regulation, and driven low if at least one of the rails is below the power-good threshold.
The output-high level is equal to the output voltage of DCDC6.
PGOOD_BU is the logical and between PGOOD (DCDC5) and PGOOD (DCDC6), and has no delay time builtin. Unlike the main power-good, a fault on DCDC5 or DCDC6 does not trigger the power-down sequencer, does
not disable any of the rails in the system, and has no effect on the PGOOD pin. DCDC5 and DCDC6 recover
automatically once the fault is removed.
Note
In this example, the power-down is triggered by a fault on DCDC3.
This timing diagram assumes each rail powers up within the strobe delay time. If a rail takes longer
than the strobe delay time to power up, the next rail will wait for the previous rail to reach its PGOOD
voltage, and then may wait an additional 1 ms until it is enabled.
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VSYS
5 s (maximum)
PB
nWAKEUP
PWR_EN
(deglitched)
DCDC6
PG DCDC6
(internal)
DCDC5
DLY1
PG DCDC5
(internal)
PGOOD_BU
A. Sequence shown for TPS65218D0 and TPS6521825 variants. For TPS6521815 variant, order and timing of DCDC5 and DCDC6 can be
modified using registers SEQ1-2 and SEQ5 in Section 8.6.4 .
Figure 8-9. Typical Power-Up Sequence of DCDC5 and DCDC6
8.3.1.6 Internal LDO (INT_LDO)
The internal LDO provides a regulated voltage to the internal digital core and analog circuitry. The internal LDO
has a nominal output voltage of 2.5 V and can support up to 10 mA of external load. During EEPROM
programming, the output voltage is elevated to 3.6 V as described in Section 8.5.1. Therefore, any external
circuitry connected to INT_LDO must be capable of supporting that voltage.
When system power fails, the UVLO comparator triggers the power-down sequence. If system power drops
below 2.3 V, the digital core is reset and all remaining power rails are shut down instantaneously and are pulled
low to ground by their internal discharge circuitry (DCDC1-4 and LDO1).
The internal LDO reverse blocks to prevent the discharging of the output capacitor (CINT_LDO) on the INT_LDO
pin. The remaining charge on the INT_LDO output capacitor provides a supply for the power rail discharge
circuitry to ensure the outputs are discharged to ground even if the system supply has failed. The amount of
hold-up time specified in Section 7.5 is a function of the output capacitor value (CINT_LDO) and the amount of
external load on the INT_LDO pin, if any. The design allows for enough hold-up time to sufficiently discharge
DCDC1-4, and LDO1 to ensure proper processor power-down sequencing.
From
system
power
IN_BIAS
INT_LDO
1 …F
UVLO
RESET
Digital Core
Power-Rail
Discharge Circuitry
EEPROM
Figure 8-10. Internal LDO and UVLO Sensing
28
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8.3.1.7 Current Limited Load Switches
The TPS6521815 provides three current limited load switches with individual inputs, outputs, and enable control.
Each switch provides the following control and diagnostic features:
• The ON or OFF state of the switch is controlled by the corresponding LSx_EN bit in the ENABLE register.
• LS1 can be controlled by the sequencer or through I2C communication.
• LS2 and LS3 can only be controlled through I2C communication. The sequencer has no control over LS2 and
LS3.
• Each switch has an active discharge function, disabled by default, and enabled through the LSxDCHRG bit.
When enabled, the switch output is discharged to ground whenever the switch is disabled.
• When the PFI input drops below the power-fail threshold (the power-fail comparator trips), the load switches
are automatically disabled to shed system load. This function must be individually enabled for each switch
through the corresponding LSxnPFO bit. The switches do not turn back on automatically as the system
voltage recovers, and must be manually re-enabled.
• An interrupt (LSx_I) issues whenever a load switch actively limits the output current, such as when the output
load exceeds the current limit value. The switch remains ON and provides current to the load according to the
current-limit setting.
• All three load switches have local overtemperature sensors which disable the corresponding switch if the
power dissipation and junction temperature exceeds the safe operating value. The switch automatically
recovers once the temperature drops below the OTS threshold value minus hysteresis. The LSx_F (fault)
interrupt bit is set while the switch is held OFF by the OTS function.
8.3.1.7.1 Load Switch 1 (LS1)
LS1 is a non-reverse blocking, low-voltage (< 3.6 V), low-impedance switch intended to support DDRx selfrefresh mode by cutting off the DDRx supply to the SOC DDRx interface during SUSPEND mode. In a typical
application, the input of LS1 is tied to the output of DCDC3 while the output of LS1 is connected to the memoryinterface supply pin of the SOC. LS1 can be controlled by the internal sequencer, just as any power rail.
LS1_EN
LS1DIS
LS1nPFO
SOC
IN_LS1
LS1
From DCDC3
250
10 …F
DDR Memory
Interface
LS1_I
LS1_F
Figure 8-11. Typical Application of Load Switch 1
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8.3.1.7.2 Load Switch 2 (LS2)
LS2 is a reverse-blocking, 5 V, low-impedance switch. Load switch 2 provides four different current limit values
(100/200/500/1000 mA) that are selectable through LS2ILIM[1:0] bits. Overcurrent is reported through the LS2_I
interrupt.
LS2 has its own input-undervoltage protection which forces the switch OFF if the switch input voltage (VIN_LS2) is
2.7 V.
30
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8.3.1.9 Coin Cell Battery Voltage Acquisition
10
CC
LOW (2.3 V)
+
DISABLED
+
±
CC_AQ = 1
Coin Cell
VREF
±
GOOD (2.6 V)
+
Enable 100-k
load resistor on CC
input.
Enable comparators.
VREF
±
CC_STAT[1:0]
IDEAL (3 V)
+
VREF
LOGIC CORE
±
Wait 600 ms
LOAD ENABLE
Latch comparator outputs;
Store result in CC_STAT[1:0]
Disable 100-k load resistor.
Disable comparators
Restore CC_AQ bit to 0 (CC_AQ = 0)
Issue interrupt (CC_AQC = 1)
CC_STAT[1:0] = 00b ± VCC < VLOW; Coin cell is not present or at end-of-life (EOL).
CC_STAT[1:0] = 01b ± VLOW < VCC < VGOOD; Coin cell is LOW.
CC_STAT[1:0] = 10b ± VGOOD < VCC < VIDEAL; Coin cell is GOOD.
CC_STAT[1:0] = 11b ± VIDEAL < VCC; Coin cell voltage is IDEAL.
Figure 8-14. Left: Flow Chart for Acquiring Coin Cell Battery Voltage Right: Comparator Circuit
8.3.1.10 UVLO
Depending on the slew rate of the input voltage into the IN_BIAS pin, the power rails of TPS6521815 will be
enabled at either VULVO or VULVO + VHYS.
If the slew rate of the IN_BIAS voltage is greater than 30 V/s, then TPS6521815 will power up at VULVO. Once
the input voltage rises above this level, the input voltage may drop to the VUVLO level before the PMIC shuts
down. In this scenario, if the input voltage were to fall below VUVLO but above 2.55 V, the input voltage would
have to recover above VUVLO in less than 5 ms for the device to remain active.
If the slew rate of the IN_BIAS voltage is less than 30 V/s, then TPS6521815 will power up at VULVO + VHYS.
Once the input voltage rises above this level, the input voltage may drop to the VUVLO level before the PMIC
shuts down. In this scenario, if the input voltage were to fall below VUVLO but above 2.5 V, the input voltage
would have to recover above VUVLO + VHYS in less than 5 ms for the device to remain active.
In either slew rate scenario, if the input voltage were to fall below 2.5 V, the digital core is reset and all remaining
power rails are shut down instantaneously and are pulled low to ground by their internal discharge circuitry
(DCDC1-4 and LDO1).
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UVLO hysteresis
UVLO threshold, supply falling
< 5 ms
VIN_BIAS
UVLO active
UVLO (internal signal)
UVLO inactive
> 5-ms
deglitch
Figure 8-15. Definition of UVLO and Hysteresis
After the UVLO triggers, the internal LDO blocks current flow from its output capacitor back to the IN_BIAS pin,
allowing the digital core and the discharge circuits to remain powered for a limited amount of time to properly
shut-down and discharge the output rails. The hold-up time is determined by the value of the capacitor
connected to INT_LDO. See Section 8.3.1.6 for more details.
8.3.1.11 Power-Fail Comparator
The power-fail comparator notifies the system host if the system supply voltage drops and the system is at risk of
shutting down. The comparator has an internal 800-mV threshold and the trip-point is adjusted by an external
resistor divider.
By default, the power-fail comparator has no impact on any of the power rails or load switches. Load switches
are configured individually, to be disabled when the PFI comparator trips to shed system load and extend holdup time as described in Section 8.3.1.7 . The power-fail comparator also triggers the power-down sequencer,
such that all or selective rails power-down when the system voltage fails. To tie the power-fail comparator into
the power-down sequence, the OFFnPFO bit in the CONTROL register must be set to 1.
The power-fail comparator cannot be monitored by software, such that no interrupt or status bit is associated to
this function.
System supply voltage
nPFO
PFI
+
VREF
(800 mV)
Deglitch
±
PFI hysteresis
PFI threshold, supply falling
150 mV
above the UVLO threshold, the power-path switches to the CC input as shown in Figure 8-20. With no load on
the main supply, the input voltage may recover over time to a value greater than the coin-cell voltage and the
power-path switches back to IN_BU. This is a typical behavior in a Li-Ion battery powered system.
Depending on the system load, VIN_BIAS may drop below VINT_LDO before the power-down sequence is
completed. In that case, INT_LDO is turned OFF and the digital core is reset forcing the unit into OFF mode and
the power-path switches to IN_BU as shown in Figure 8-18.
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8.3.1.13 DCDC3 and DCDC4 Power-Up Default Selection
INT_LDO
DC34_SEL current source disabled.
All comparators disabled.
10 µA
SOURCE ENABLE
DC34_SEL
+
Sequence is triggered by any
event forcing register reset.
1200 mV
RSEL
+
Enable 10 µA DC34_SEL current source.
Enable comparators.
825 mV
575 mV
400 mV
Disable comparators
Disable DC34_SEL current source.
100 mV
V3
DCDC4[5:0]
V2
V1
±
+
Start power-up sequencer
DCDC3[5:0]
±
+
163 mV
LOGIC CORE
±
+
275 mV
V4
±
+
Latch comparator outputs;
Depending on result, over-write
DCDC3[5:0] and / or DCDC4[5:0]
power-up default.
V5
±
+
Wait 100 µs
V6
±
V0
±
Figure 8-21. Left: Flow Chart for Selecting DCDC Power-Up Default Voltage Right: Comparator Circuit
Table 8-2. Power-Up Default Values of DCDC3 and DCDC4
RSEL [KΩ]
MIN
34
TYP
POWER-UP DEFAULT
MAX
0
0
DCDC3[5:0]
DCDC4[5:0]
7.7
Programmed default (1.2 V)
Programmed default (3.3 V)
11.8
12.1
12.4
0x12 (1.35 V)
Programmed default (3.3 V)
19.5
20
20.5
0x18 (1.5 V)
Programmed default (3.3 V)
30.9
31.6
32.3
0x1F (1.8 V)
Programmed default (3.3 V)
44.4
45.3
46.3
0x3D (3.3 V)
0x01 (1.2 V)
64.8
66.1
67.3
Programmed default (1.2 V)
0x07 (1.35 V)
93.6
95.3
97.2
Programmed default (1.2 V)
0x0D (1.5 V)
146
150
Tied to
INT_LDO
Programmed default (1.2 V)
0x14 (1.8 V)
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8.3.1.14 I/O Configuration
The device has two GPIOs and one GPO pin, which are configured as follows:
• GPIO1:
– General-purpose, open-drain output is controlled by the GPO1 user bit or sequencer.
– DDR3 reset input signal from SOC. The signal is either latched or passed-through to the GPO2 pin. See
Table 8-3 for details.
• GPO2:
– General-purpose output is controlled by the GPO2 user bit.
– DDR3 reset output signal. Signal is controlled by GPIO1 and PGOOD. See Table 8-4 for details.
– Output buffer is configured as open-drain or push-pull.
• GPIO3:
– General-purpose, open-drain output id controlled by the GPO3 user bit or sequencer.
– Reset input-signal for DCDC1 and DCDC2.
Table 8-3. GPIO1 Configuration
IO1_SEL
(EEPROM)
GPO1
(USER BIT)
PGOOD
(PMIC SIGNAL)
GPIO1
(I/O PIN)
0
0
X
0
0
1
X
HiZ
COMMENTS
Open-drain output, driving low
Open-drain output, HiZ
Table 8-4. GPO2 Configuration
IO1_SEL
(EEPROM)
GPO2_BUF
(EEPROM)
GPO2
(USER BIT)
0
0
0
COMMENTS
GPO2 is open drain output controlled by GPO2 user bit (driving low).
0
0
1
GPO2 is open drain output controlled by GPO2 user bit (HiZ).
0
1
0
GPO2 is push-pull output controlled by GPO2 user bit (driving low).
0
1
1
GPO2 is push-pull output controlled by GPO2 user bit (driving high).
1
0
X
GPO2 is open drain output controlled by GPIO1 and PGOOD.
1
1
X
GPO2 is push-pull output controlled by GPIO1 and PGOOD.
Table 8-5. GPIO3 Configuration
DC12_RST
(EEPROM)
GPO3
(USER BIT)
0
0
0
0
1
HiZ
1
X
GPIO3
(I/O PIN)
COMMENTS
Open-drain output, driving low
Active low
Open-drain output, HiZ
GPIO3 is DCDC1 and DCDC2 reset input signal to PMIC (active low). See
Section 8.3.1.14.2 for details.
8.3.1.14.1 Configuring GPO2 as Open-Drain Output
GPO2 may be configured as open-drain or push-pull output. The supply for the push-pull driver is internally
connected to the IN_LS1 input pin, whereas an external pull-up resistor and supply are required in the opendrain configuration. Because of the internal connection to IN_LS1, the external pull-up supply must not exceed
the voltage on the IN_LS1 pin, otherwise leakage current may be observed from GPO2 to IN_LS1 as shown in
Figure 8-22.
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IN_LS1
External
pullup supply
Leakage path if external
pullup supply is > IN_LS1
GPO2
Push-Pull
Driver
Open-Drain
Driver
Figure 8-22. GPO2 as Open-Drain Output
Note
When configured as open-drain output, the external pull-up supply must not exceed the voltage level
on IN_LS1 pin.
8.3.1.14.2 Using GPIO3 as Reset Signal to DCDC1 and DCDC2
The GPIO3 is an edge-sensitive reset input to the PMIC, when the DC12_RST bit set to 1. The reset signal
affects DCDC1 and DCDC2 only, so that only those two registers are reset to the power-up default whenever
GPIO3 input transitions from high to low, while all other registers maintain their current values. DCDC1 and
DCDC2 transition back to the default value following the SLEW settings, and are not power cycled. This function
recovers the processor from reset events while in low-power mode.
PGOOD (1 ms delayed)
GPIO1
Latch,
Gating
IO1_SEL (EEPROM: 0b = output, 1b = input)
GPO1 (user register bit, sequencer control enabled)
GPO2_BUF (EEPROM: 0b = open drain, 1b = push-pull)
IN_LS1
GPO2
EN
1
0
GPO2 (user register bit)
DC12_RST (EEPROM: 0b = disabled, 1b = enabled)
GPIO3
DCDC 1 and DCDC 2 reset
GPO3 (user register bit, sequencer control enabled)
Figure 8-23. I/O Pin Logic
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PMIC power-up
PGOOD
GPIO1 (DDR_RESET_IN)
(coming from SOC)
1 ms
GPO2 (DDR_RESET_OUT)
(going to DDR memory)
1 ms
RESET_OUT follows RESET_IN
RESET_IN is latched
RESET_OUT follows RESET_IN
Figure 8-24. DDR3 Reset Timing Diagram
Note
GPIO must be configured as input (IO1_SEL = 1b). GPO2 is automatically configured as output.
8.3.1.15 Push Button Input (PB)
The PB pin is a CMOS-type input used to power-up the PMIC. Typically, the PB pin is connected to a momentary
switch to ground and an external pullup resistor. The power-up sequence is triggered if the PB input is held low
for 600 ms.
8 s ||
OTS ||
PGOOD fault
VIN_BIAS < VUVLO ||
(OFFnPFO = 1 & VPFI < power-fail threshold)
SEQ DOWN
(500 ms)
DCDC1...4
DCDC5...6
LDO1
INT_LDO
I2C
PGOOD
PGOOD_BU
nWAKEUP
Registers
= OFF
= FSEAL dependent
= OFF
= ON
= NO
= low
= rail dependent
= low
: GHIDXOW
ANY STATE
SEQ DOWN
(500 ms)
VIN_BIAS > (VUVLO + hysteresis)
VIN_BIAS > (VUVLO + hysteresis) &
PB = high &
AC_DET = high &
PWR_EN = low
PRE_OFF
OFF
VIN_BIAS > (VUVLO + hysteresis) &
(PB (;) || AC_DET (;) ||
PWR_EN = high)
VIN_BIAS > (VUVLO + hysteresis) &
(PB (;) ||
AC_DET (;) ||
PWR_EN = high)
WAIT_PWR_EN
DCDC1...4
DCDC5...6
LDO1
INT_LDO
I 2C
PGOOD
PGOOD_BU
nWAKEUP
Registers
= OFF
= FSEAL dependent
= OFF
= OFF
OTS
= NO
= low
= rail dependent
RECOVERY
= low
: GHIDXOW
DCDC1...4
DCDC5...6
LDO1
INT_LDO
I2C
PGOOD
PGOOD_BU
FSEAL
nWAKEUP
= ON
= ON
= ON
= ON
= YES
= high (rail dependent)
= high (rail dependent)
= can be set to 1 but not to 0
= low
DCDC1...4
DCDC5...6
LDO1
INT_LDO
I2C
PGOOD
PGOOD_BU
FSEAL
nWAKEUP
= ON
= ON
= ON
= ON
= YES
= high (rail dependent)
= high (rail dependent)
= can be set to 1 but not to 0
= HiZ
DCDC1...4
DCDC5...6
LDO1
INT_LDO
I2C
PGOOD
PGOOD_BU
nWAKEUP
DCDC1 reg.
DCDC2 reg.
= seq. dependent
= seq. / FSEAL dependent
= seq. dependent
= ON
= YES
= low
= high (rail dependent)
= HiZ
: GHIDXOW
: GHIDXOW
DCDC1...4
DCDC5...6
LDO1
INT_LDO
I 2C
PGOOD
PGOOD_BU
nWAKEUP
FSEAL
Registers
= OFF
= FSEAL dependent
= OFF
= ON
= NO
= low
= high
= HiZ
= maintains state
: GHIDXOW
PWR_EN = high
20 s time-out &
PB = high &
PWR_EN = low
ACTIVE
PWR_EN = low
DCDC1...4 = OFF &
LDO1 = OFF
SEQ DOWN
(500 ms)
DCDC1 = ON || DCDC2 = ON ||
DCDC3 = ON || DCDC4 = ON ||
LDO1 = ON
SUSPEND
PWR_EN = high ||
AC_DET (;) ||
PB (;)
PB (↓) has 50 ms debounce.
AC_DET (↓) has 10 ms debounce.
(↓) = denotes falling edge of signal.
Figure 8-34. Modes of Operation Diagram
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8.4.2 OFF
In OFF mode, the PMIC is completely shut down with the exception of a few circuits to monitor the AC_DET,
PWR_EN, and PB input. All power rails are turned off and the registers are reset to their default values. The I2C
communication interface is turned off. This is the lowest-power mode of operation. To exit OFF mode VIN_BIAS
must exceed the UVLO threshold and one of the following wake-up events must occur:
• The PB input is pulled low.
• THE AC_DET input is pulled low.
• The PWR_EN input is pulled high.
To enter the OFF state, ensure that all power rails are assigned to the sequencer, then pull the PWR_EN pin low.
Additionally, if the OFFnPFO bit is set to 1b and the PFI input falls below the power fail threshold the device
transitions to the OFF state. If the freshness seal is broken, DCDC5 and DCDC6 remains on in the OFF state. If
a PGOOD or OTS fault occurs while in the ACTIVE state, TPS6521815 will transition to the RESET state.
8.4.3 ACTIVE
This is the typical mode of operation when the system is up and running. All DCDC converters, LDOs, and load
switch are operational and can be controlled through the I2C interface. After a wake-up event, the PMIC enables
all rails controlled by the sequencer and pulls the nWAKEUP pin low to signal the event to the host processor.
The device only enters the ACTIVE state if the host asserts the PWR_EN pin within 20 s after the wake-up
event. Otherwise it will enter the OFF state. The nWAKEUP pin returns to HiZ mode after the PWR_EN pin is
asserted. The ACTIVE state can also be directly entered from the SUSPEND state by pulling the PWR_EN pin
high. See the SUSPEND state description for details. To exit the ACTIVE mode, the PWR_EN pin must be pulled
low.
8.4.4 SUSPEND
The SUSPEND state is a low-power mode of operation intended to support system standby. Typically all power
rails are turned off with the exception of any rail with an SEQ register set to 0h. DCDC5 and DCDC6 also remain
enabled if the freshness seal is broken. To enter the SUSPEND state, pull the PWR_EN pin low. All power rails
controlled by the power-down sequencer are shut down, and after 500 ms the device enters the SUSPEND
state. All rails not controlled by the power-down sequencer will maintain its state. Note: all register values are
reset as the device enters the SUSPEND state. The device enters the ACTIVE state after it detects a wake-up
event as described in the previous sections.
8.4.5 RESET
The TPS6521815 can be reset by holding the PB pin low for more than 8 or 15 s, depending on the value of the
TRST bit. All rails are shut down by the sequencer and all register values reset to their default values. Rails not
controlled by the sequencer are shut down additionally. Note: the RESET function power-cycles the device and
only temporarily shuts down the output rails. Resetting the device does not lead to an OFF state. If the PB_IN
pin is kept low for an extended amount of time, the device continues to cycle between the ACTIVE and RESET
state, entering the RESET every 8 or 15 s.
The device is also reset if a PGOOD or OTS fault occurs. The TPS6521815 remains in the RECOVERY state
until the fault is removed, at which time it transitions back to the ACTIVE state.
44
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8.5 Programming
8.5.1 Programming Power-Up Default Values
A consecutive write of 0x50, 0x1A, or 0xCE to the password register commits the current register settings to
EEPROM memory so they become the new power-up default values.
Note
Only bits marked with (E2) in the register map have EEPROM programmable power-up default
settings. All other bits keep the factory settings listed in the register map. Changing the power-up
default values is not recommended in production but for prototyping only.
The EEPROM of a device can only be programmed up to 1000 times. The number of programming cycles
should never exceed this amount. Contact TI for changing production settings.
EEPROM values can only be changed if the input voltage (VIN_BIAS) is greater than 4.5 V. If the input voltage is
less than 4.5 V, EEPROM values remain unchanged and the VPROG interrupt is issued. EEPROM programming
requires less than 100 ms. During this time the supply voltage must be held constant and all I 2C write commands
are ignored. Completion of EEPROM programming is signaled by the EE_CMPL interrupt.
Program EEPROM Registers
IDLE
0x50, 0x1A, and 0xCE written to the PASSWORD register
Check supply voltage
(VIN_BIAS)
VIN_BIAS ” 4.5 V
VIN_BIAS > 4.5 V
Lock I2C Interface for write
access
< 100 ms
INT_LDO output
adjusted to 3.6 V
Program EEPROM
EE bit permanently set to 1b
INT_LDO output
adjusted to 2.5 V
Unlock I2C Interface
Issue PRGC Interrupt
Issue PRGC Interrupt
Figure 8-35. Flow Chart for Programming New Power-Up Default Values
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8.6 Register Maps
8.6.1 Password Protection
Registers 0x11 through 0x26 are protected against accidental write by a 8-bit password. The password must be
written prior to writing to a protected register and automatically resets to 0x00 after the next I2C transaction,
regardless of the register accessed or transaction type (read or write). The password is required for write access
only and is not required for read access.
To write to a protected register:
1. Write the address of the destination register, XORed with the protection password (0x7D), to the PASSWORD
register (0x10).
2. Write the data to the password protected register.
3. If the content of the PASSWORD register is XORed, with an address send that matches 0x7D, then the data
transfers to the protected register. Otherwise, the transaction is ignored. In either case the PASSWORD
register resets to 0x00 after the transaction.
The cycle must be repeated for any other register that is Level1 write protected.
8.6.2 Freshness Seal (FSEAL) Bit
The FSEAL (freshness seal) bit prevents accidental shut-down of the always-on supplies, DCDC5 and DCDC6.
The FSEAL bit exists in a default state of 0b, and can be set to 1b and reset to 0b once for factory testing. The
second time the bit is set to 1b, it remains 1b and cannot reset again under software control. Coin-cell battery
and main supply must be disconnected from the device to reset the FSEAL bit again. With the FSEAL bit set to
1b, DCDC5 and DCDC6 are forced ON regardless of the state of the DC5_EN and DC6_EN bit, and the rails do
not turn off when the device enters the OFF state.
A consecutive write of [0xB1, 0xFE, and 0xA3] to the password register sets the FSEAL bit to 1b. The three
bytes must be written consecutively for the sequence to be valid. No other read or write transactions are allowed
between the three bytes, or the sequence is invalid. After a valid sequence, the FSEAL bit in the STATUS
register reflects the new setting.
After setting the FSEAL bit, the device can enter the OFF state or any other mode of operation without affecting
the state of the FSEAL bit, provided the coin-cell supply remains connected to the chip.
A second write of [0xB1, 0xFE, and 0xA3] to the password register resets the FSEAL bit to 0b. The three bytes
must be written consecutively for the sequence to be valid.
A third write of [0xB1, 0xFE, and 0xA3] to the password register sets the FSEAL bit to 1b and locks it into this
state for as long as the coin-cell supply (CC) remains connected to the device.
8.6.3 FLAG Register
The FLAG register contains a bit for each power rail and GPO to keep track of the enable state of the rails while
the system is suspended. The following rules apply to the FLAG register:
• The power-up default value for any flag bit is 0.
• Flag bits are read-only and cannot be written to.
• Upon entering a SUSPEND state, the flag bits are set to same value as their corresponding ENABLE bits.
Rails and GPOs enabled in a SUSPEND state have flag bits set to 1, while all other flag bits are set to 0. Flag
bits are not updated while in the SUSPEND state or when exiting the SUSPEND state.
• The FLAG register is static in WAIT_PWR_EN and ACTIVE state. The FLAG register reflects the enable state
of DCDC1, DCDC2, DCDC3, DCDC4, and LDO1; and, reflects the enable state of GPO1, GPO2, and GPO3
during the last SUSPEND state.
The host processor reads the FLAG register to determine if the system powered up from the OFF or SUSPEND
state. In the SUSPEND state, typically the DDR memory is kept in self refresh mode and therefore the DC3_FLG
or DC4_FLG bits are set.
46
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8.6.4 TPS6521815 Registers
Table 8-6 lists the memory-mapped registers for the TPS6521815. All register offset addresses not listed in Table
8-6 should be considered as reserved locations and the register contents should not be modified.
Table 8-6. TPS6521815 Registers
SUBADDRESS
ACRONYM
REGISTER NAME
R/W
PASSWORD
PROTECTED
SECTION
0x00
CHIPID
CHIP ID
R
No
Section 8.6.5
0x01
INT1
INTERRUPT 1
R
No
Section 8.6.6
0x02
INT2
INTERRUPT 2
R
No
Section 8.6.7
0x03
INT_MASK1
INTERRUPT MASK 1
R/W
No
Section 8.6.8
0x04
INT_MASK2
INTERRUPT MASK 2
R/W
No
Section 8.6.9
0x05
STATUS
STATUS
R
No
Section 8.6.10
0x06
CONTROL
CONTROL
R/W
No
Section 8.6.11
0x07
FLAG
FLAG
R
No
Section 8.6.12
0x10
PASSWORD
PASSWORD
R/W
No
Section 8.6.13
0x11
ENABLE1
ENABLE 1
R/W
Yes
Section 8.6.14
0x12
ENABLE2
ENABLE 2
R/W
Yes
Section 8.6.15
0x13
CONFIG1
CONFIGURATION 1
R/W
Yes
Section 8.6.16
0x14
CONFIG2
CONFIGURATION 2
R/W
Yes
Section 8.6.17
0x15
CONFIG3
CONFIGURATION 3
R/W
Yes
Section 8.6.18
0x16
DCDC1
DCDC1 CONTROL
R/W
Yes
Section 8.6.19
0x17
DCDC2
DCDC2 CONTROL
R/W
Yes
Section 8.6.20
0x18
DCDC3
DCDC3 CONTROL
R/W
Yes
Section 8.6.21
0x19
DCDC4
DCDC4 CONTROL
R/W
Yes
Section 8.6.22
0x1A
SLEW
SLEW RATE CONTROL
R/W
Yes
Section 8.6.23
0x1B
LDO1
LDO1 CONTROL
R/W
Yes
Section 8.6.24
0x20
SEQ1
SEQUENCER 1
R/W
Yes
Section 8.6.25
0x21
SEQ2
SEQUENCER 2
R/W
Yes
Section 8.6.26
0x22
SEQ3
SEQUENCER 3
R/W
Yes
Section 8.6.27
0x23
SEQ4
SEQUENCER 4
R/W
Yes
Section 8.6.28
0x24
SEQ5
SEQUENCER 5
R/W
Yes
Section 8.6.29
0x25
SEQ6
SEQUENCER 6
R/W
Yes
Section 8.6.30
0x26
SEQ7
SEQUENCER 7
R/W
Yes
Section 8.6.31
Table 8-7 explains the common abbreviations used in this section.
Table 8-7. Common Abbreviations
Abbreviation
Description
R
Read
W
Write
R/W
Read and write capable
E2
Backed by EEPROM
h
Hexadecimal notation of a group of bits
b
Hexadecimal notation of a bit or group of bits
X
Do not care reset value
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8.6.5 CHIPID Register (subaddress = 0x00) [reset = 0x15]
CHIPID is shown in Figure 8-31 and described in Table 8-8.
Return to Table 8-6.
Figure 8-31. CHIPID Register
7
6
5
4
3
2
1
CHIP
REV
R-2h
R-5h
0
Table 8-8. CHIPID Register Field Descriptions
Bit
Field
Type
Reset
Description
7-3
CHIP
R
2h
Chip ID:
0h = TPS65218D0
1h = Future use
2h = TPS6521815
3h = Future use
4h = TPS6521825
5h = Future use
...
1Fh = Future use
2-0
REV
R
5h
Revision code:
0h = Revision 1.0
1h = Revision 1.1
2h = Revision 2.0
3h = Revision 2.1
4h = Revision 3.0
5h = Revision 4.0 (D0)
6h = Future use
7h = Future use
8.6.6 INT1 Register (subaddress = 0x01) [reset = 0x00]
INT1 is shown in Figure 8-32 and described in Table 8-9.
Return to Table 8-6.
Figure 8-32. INT1 Register
7
6
5
4
3
2
1
0
RESERVED
VPRG
AC
PB
HOT
CC_AQC
PRGC
R-00b
R-0b
R-0b
R-0b
R-0b
R-0b
R-0b
Table 8-9. INT1 Register Field Descriptions
48
Bit
Field
Type
Reset
7-6
Description
RESERVED
R
00b
5
VPRG
R
0b
Programming voltage interrupt:
0b = No significance.
1b = Input voltage is too low for programming power-up default
values.
4
AC
R
0b
AC_DET pin status change interrupt. Note: Status information is
available in STATUS register.
0b = No change in status.
1b = AC_DET status change (AC_DET pin changed high to low or
low to high).
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Table 8-9. INT1 Register Field Descriptions (continued)
Bit
Field
Type
Reset
Description
3
PB
R
0b
Push-button status change interrupt. Note: Status information is
available in STATUS register
0b = No change in status.
1b = Push-button status change (PB changed high to low or low to
high).
2
HOT
R
0b
Thermal shutdown early warning:
0b = Chip temperature is below HOT threshold.
1b = Chip temperature exceeds HOT threshold.
1
CC_AQC
R
0b
Coin cell battery voltage acquisition complete interrupt:
0b = No significance.
1b = Backup battery status comparators have settled and results are
available in STATUS register.
0
PRGC
R
0b
EEPROM programming complete interrupt:
0b = No significance.
1b = Programming of power-up default settings has completed
successfully.
8.6.7 INT2 Register (subaddress = 0x02) [reset = 0x00]
INT2 is shown in Figure 8-33 and described in Table 8-10.
Return to Table 8-6.
Figure 8-33. INT2 Register
7
6
5
4
3
2
1
0
RESERVED
LS3_F
LS2_F
LS1_F
LS3_I
LS2_I
LS1_I
R-00b
R-0b
R-0b
R-0b
R-0b
R-0b
R-0b
Table 8-10. INT2 Register Field Descriptions
Bit
Field
Type
Reset
7-6
Description
RESERVED
R
00b
5
LS3_F
R
0b
Load switch 3 fault interrupt:
0b = No fault. Switch is working normally.
1b = Load switch exceeded operating temperature limit and is
temporarily disabled.
4
LS2_F
R
0b
Load switch 2 fault interrupt:
0b = No fault. Switch is working normally.
1b = Load switch exceeded operating temperature limit or input
voltage dropped below minimum value. Switch is temporarily
disabled.
3
LS1_F
R
0b
Load switch 1 fault interrupt:
0b = No fault. Switch is working normally.
1b = Load switch exceeded operating temperature limit and is
temporarily disabled.
2
LS3_I
R
0b
Load switch 3 current-limit interrupt:
0b = Load switch is disabled or not in current limit.
1b = Load switch is actively limiting the output current (output load is
exceeding current limit value).
1
LS2_I
R
0b
Load switch 2 current-limit interrupt:
0b = Load switch is disabled or not in current limit.
1b = Load switch is actively limiting the output current (output load is
exceeding current limit value).
0
LS1_I
R
0b
Load switch 1 current-limit interrupt:
0b = Load switch is disabled or not in current limit.
1b = Load switch is actively limiting the output current (output load is
exceeding current limit value).
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8.6.8 INT_MASK1 Register (subaddress = 0x03) [reset = 0x00]
INT_MASK1 is shown in Figure 8-34 and described in Table 8-11.
Return to Table 8-6.
Figure 8-34. INT_MASK1 Register
7
6
5
4
3
2
1
0
RESERVED
VPRGM
ACM
PBM
HOTM
CC_AQCM
PRGCM
R-00b
R/W-0b
R/W-0b
R/W-0b
R/W-0b
R/W-0b
R/W-0b
Table 8-11. INT_MASK1 Register Field Descriptions
Bit
Field
Type
Reset
7-6
Description
RESERVED
R
00b
5
VPRGM
R/W
0b
Programming voltage interrupt mask bit. Note: mask bit has no effect
on monitoring function:
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
4
ACM
R/W
0b
AC_DET interrupt masking bit:
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
Note: mask bit has no effect on monitoring function.
3
PBM
R/W
0b
PB interrupt masking bit. Note: mask bit has no effect on monitoring
function.
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
2
HOTM
R/W
0b
HOT interrupt masking bit. Note: mask bit has no effect on
monitoring function.
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
1
CC_AQCM
R/W
0b
C_AQC interrupt masking bit. Note: mask bit has no effect on
monitoring function.
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
0
PRGCM
R/W
0b
PRGC interrupt masking bit. Note: mask bit has no effect on
monitoring function.
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
8.6.9 INT_MASK2 Register (subaddress = 0x04) [reset = 0x00]
INT_MASK2 is shown in Figure 8-35 and described in Table 8-12.
Return to Table 8-6.
Figure 8-35. INT_MASK2 Register
7
6
5
4
3
2
1
0
RESERVED
LS3_FM
LS2_FM
LS1_FM
LS3_IM
LS2_IM
LS1_IM
R-00b
R/W-0b
R/W-0b
R/W-0b
R/W-0b
R/W-0b
R/W-0b
Table 8-12. INT_MASK2 Register Field Descriptions
Bit
Field
Type
Reset
7-6
RESERVED
R
00b
LS3_FM
R/W
0b
5
50
Description
LS3 fault interrupt mask bit. Note: mask bit has no effect on
monitoring function.
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
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Table 8-12. INT_MASK2 Register Field Descriptions (continued)
Bit
Field
Type
Reset
Description
4
LS2_FM
R/W
0b
LS2 fault interrupt mask bit. Note: mask bit has no effect on
monitoring function.
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
3
LS1_FM
R/W
0b
LS1 fault interrupt mask bit. Note: mask bit has no effect on
monitoring function.
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
2
LS3_IM
R/W
0b
LS3 current-limit interrupt mask bit. Note: mask bit has no effect on
monitoring function.
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
1
LS2_IM
R/W
0b
LS2 current-limit interrupt mask bit. Note: mask bit has no effect on
monitoring function.
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
0
LS1_IM
R/W
0b
LS1 current-limit interrupt mask bit. Note: mask bit has no effect on
monitoring function.
0b = Interrupt is unmasked (interrupt event pulls nINT pin low).
1b = Interrupt is masked (interrupt has no effect on nINT pin).
8.6.10 STATUS Register (subaddress = 0x05) [reset = 00XXXXXXb]
Register mask: C0h
STATUS is shown in Figure 8-36 and is described in Table 8-13.
Return to Table 8-6.
Figure 8-36. STATUS Register
7
6
5
4
FSEAL
EE
AC_STATE
PB_STATE
3
STATE
2
1
CC_STAT
0
R-0b
R-0b
R-X
R-X
R-X
R-X
Table 8-13. STATUS Register Field Descriptions
Bit
Field
Type
Reset
Description
7
FSEAL
R
0b
Freshness seal (FSEAL) status. Note: See Section 8.6.2 for details.
0b = FSEAL is in native state (fresh).
1b = FSEAL is broken.
6
EE
R
0b
EEPROM status:
0b = EEPROM values have not been changed from factory default
setting.
1b = EEPROM values have been changed from factory default
settings.
5
AC_STATE
R
X
AC_DET input status bit:
0b = AC_DET input is inactive (AC_DET input pin is high).
1b = AC_DET input is active (AC_DET input is low).
4
PB_STATE
R
X
PB input status bit:
0b = Push Button input is inactive (PB input pin is high).
1b = Push Button input is active (PB input pin is low).
STATE
R
X
State machine STATE indication:
0h = PMIC is in transitional state.
1h = PMIC is in WAIT_PWR_EN state.
2h = PMIC is in ACTIVE state.
3h = PMIC is in SUSPEND state.
3-2
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Table 8-13. STATUS Register Field Descriptions (continued)
Bit
Field
Type
Reset
Description
1-0
CC_STAT
R
X
Coin cell state of charge. Note: Coin-cell voltage acquisition must be
triggered first before status bits are valid. See CC_AQ bit in Section
8.6.11 .
0h = VCC < VLOW_LEVEL; Coin cell is not present or approaching endof-life (EOL).
1h = VLOW_LEVEL < VCC < VGOOD_LEVEL; Coin cell voltage is LOW.
2h = VGOOD_LEVEL < VCC