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TPS706
SBVS245A – OCTOBER 2014 – REVISED MARCH 2015
TPS706 150-mA, 6.5-V, 1-µA IQ Voltage Regulators with Enable
1 Features
3 Description
•
•
•
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The TPS706 series of linear voltage regulators are
ultralow, quiescent current devices designed for
power-sensitive applications. A precision band-gap
and error amplifier provides 2% accuracy over
temperature. Quiescent current of only 1 µA makes
these devices ideal solutions for battery-powered,
always-on systems that require very little idle-state
power dissipation. These devices have thermalshutdown,
current-limit,
and
reverse-current
protection for added safety.
1
Input Voltage Range: 2.7 V to 6.5 V
Ultralow IQ: 1 μA
Reverse Current Protection
Low ISHDN: 150 nA
Supports 200-mA Peak Output
Low Dropout: 245 mV at 50 mA
2% Accuracy Over Temperature
Available in Fixed-Output Voltages: 1.2 V to 5 V
Thermal Shutdown and Overcurrent Protection
Packages: SOT-23-5, WSON-6
2 Applications
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•
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These regulators can be put into shutdown mode by
pulling the EN pin low. The shutdown current in this
mode goes down to 150 nA, typical.
The TPS706 series is available in WSON-6 and SOT23-5 packages.
Smartphones and Tablets
Portable and Battery-Powered Applications
Camera Modules
Set-Top Boxes
Wearables
Solid State Drives
Medical Equipment
Device Information(1)
PART NUMBER
TPS706
PACKAGE
BODY SIZE (NOM)
SOT-23 (5)
2.90 mm × 1.60 mm
WSON (6)
2.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
space
space
space
Typical Application Circuit
GND Current vs VIN and Temperature
3
IN
VOUT
OUT
1 mF
2.2 mF
GND
EN
TPS706
NC
TJ = -40°C
TJ = +25°C
TJ = +85°C
TJ = +125°C
2.8
Ground Pin Current (PA)
VIN
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
4
4.25
4.5
4.75
5 5.25 5.5 5.75
Input Voltage (V)
6
6.25
6.5
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS706
SBVS245A – OCTOBER 2014 – REVISED MARCH 2015
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Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
5
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Timing Requirements ................................................
Typical Characteristics ..............................................
Detailed Description ............................................ 11
7.1 Overview ................................................................. 11
7.2 Functional Block Diagram ....................................... 11
7.3 Feature Description................................................. 11
7.4 Device Functional Modes........................................ 13
8
Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Application .................................................. 15
9 Power Supply Recommendations...................... 15
10 Layout................................................................... 16
10.1 Layout Guidelines ................................................. 16
10.2 Layout Examples................................................... 18
11 Device and Documentation Support ................. 19
11.1
11.2
11.3
11.4
11.5
Device Support......................................................
Documentation Support ........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
19
12 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
Changes from Original (October 2014) to Revision A
•
2
Page
Made changes to product preview data sheet; released as Production Data ........................................................................ 1
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5 Pin Configuration and Functions
DBV Package
SOT-23-5
(Top View)
1
GND
2
5
3
EN
4
OUT
NC
OUT
1
NC
2
GND
3
GND
IN
DRV Package
WSON-6
(Top View)
6
IN
5
NC
4
EN
Pin Functions
PIN
NO.
I/O
DESCRIPTION
3
I
Enable pin. Driving this pin high enables the device. Driving this pin low puts the
device into low current shutdown. This pin can be left floating to enable the device.
The maximum voltage must remain below 6.5 V.
3
2
—
6
1
I
NC
2, 5
4
—
No internal connection
OUT
1
5
O
Regulated output voltage. Connect a small 2.2-µF or greater ceramic capacitor
from this pin to ground to assure stability.
—
—
The thermal pad is electrically connected to the GND node.
Connect to the GND plane for improved thermal performance.
NAME
DRV
DBV
EN
4
GND
IN
Thermal pad
Ground
Unregulated input to the device
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6 Specifications
6.1 Absolute Maximum Ratings
specified at TJ = –40°C to 125°C, unless otherwise noted; all voltages are with respect to GND (1)
Voltage
Maximum output current
MIN
MAX
UNIT
VIN
–0.3
7
V
VEN
–0.3
7
V
VOUT
–0.3
7
V
IOUT
Internally limited
PDISS
See Thermal Information
Output short-circuit duration
Indefinite
Continuous total power dissipation
Junction temperature, TJ
–55
150
°C
Storage temperature, Tstg
–55
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
UNIT
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101 (2)
V
±500
JEDEC document JEP155 states that 2-kV HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 500-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted)
MIN
NOM
MAX
VIN
Input voltage
2.7
6.5
VOUT
Output voltage
1.2
5
IOUT
Output current
0
150
VEN
Enable voltage
0
CIN
Input capacitor
0
1
COUT
Output capacitor
2
2.2
TJ
Operating junction temperature
6.5
–40
UNIT
V
V
mA
V
µF
47
µF
125
°C
6.4 Thermal Information
TPS706
THERMAL METRIC (1)
DBV
DRV
5 PINS
6 PINS
RθJA
Junction-to-ambient thermal resistance
212.1
73.1
RθJC(top)
Junction-to-case (top) thermal resistance
78.5
97.0
RθJB
Junction-to-board thermal resistance
39.5
42.6
ψJT
Junction-to-top characterization parameter
2.86
2.9
ψJB
Junction-to-board characterization parameter
38.7
42.9
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
12.8
(1)
4
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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6.5 Electrical Characteristics
At TJ = –40°C to 125°C, VIN = VOUT(nom) + 1 V or 2.7 V (whichever is greater), IOUT = 1 mA, VEN = 2 V, and CIN = COUT = 2.2-μF
ceramic, unless otherwise noted. Typical values are at TJ = 25°C.
PARAMETER
TEST CONDITIONS
VIN
Input voltage range
VOUT
Output voltage range
VOUT(accuracy)
ΔVOUT
DC output accuracy
MIN
Output current limit (3)
IGND
Ground pin current
ISHDN
Shutdown current
VOUT ≥ 3.3 V, TJ = –40°C to 85°C
–1%
1%
3
10
mV
20
50
mV
295
650
mV
975
1540
mV
320
500
mA
IOUT = 0 mA, VOUT ≤ 3.3 V
1.3
2.55
µA
IOUT = 150 mA
350
µA
VEN ≤ 0.4 V, VIN = 2.7 V
150
nA
80
dB
62
dB
52
dB
190
μVRMS
2.8 V ≤ VOUT ≤ 3.3 V, IOUT = 50 mA
2.8 V ≤ VOUT ≤ 3.3 V, IOUT = 150 mA
VOUT = 0.9 × VOUT(nom)
200
f = 10 Hz
PSRR
Power-supply rejection ratio f = 100 Hz
f = 1 kHz
Vn
Output noise voltage
VEN(HI)
IEN
IREV
0.9
Enable pin high (disabled)
0
EN pin current
EN = 1.0 V, VIN = 5.5 V
Reverse current
(flowing out of IN pin)
Reverse current
(flowing into OUT pin)
Thermal shutdown
temperature
TJ
Operating junction
temperature
(1)
(2)
(3)
BW = 10 Hz to 100 kHz, IOUT = 10 mA,
VIN = 2.7 V, VOUT = 1.2 V
Enable pin high (enabled)
TSD
V
5.0
2%
VIN = VOUT(nom) + 1.5 V or 3 V (whichever is
greater), 100 µA ≤ IOUT ≤ 150 mA
I(CL)
V
1.2
Load regulation
UNIT
6.5
–2%
(VOUT(nom) + 1 V, 2.7 V) ≤ VIN ≤ 6.5 V
Dropout voltage (1) (2)
MAX
VOUT < 3.3 V
Line regulation
VDO
TYP
2.7
V
0.4
V
300
nA
VOUT = 3 V, VIN = VEN = 0 V
10
nA
VOUT = 3 V, VIN = VEN = 0 V
100
nA
Shutdown, temperature increasing
158
°C
Reset, temperature decreasing
140
°C
–40
125
°C
VDO is measured with VIN = 0.98 × VOUT(nom).
Dropout is only valid when VOUT ≥ 2.8 V because of the minimum input voltage limits.
Measured with VIN = VOUT + 3 V for VOUT ≤ 2.5 V. Measured with VIN = VOUT + 2.5 V for VOUT > 2.5 V.
6.6 Timing Requirements
At TJ = –40°C to 125°C, VIN = VOUT(nom) + 1 V or 2.7 V (whichever is greater), RL = 47 Ω, VEN = 2 V, and CIN = COUT = 2.2-μF
ceramic, unless otherwise noted. Typical values are at TJ = 25°C.
PARAMETER
tSTR
(1)
Start-up time (1)
MIN
TYP
MAX
UNIT
VOUT(nom) ≤ 3.3 V
200
600
µs
VOUT > 3.3 V
500
1500
µs
Startup time = time from EN assertion to 0.95 × VOUT(nom) and load = 47 Ω.
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6.7 Typical Characteristics
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.
3.31
1.205
TJ = -40°C
TJ = +25°C
TJ = +85°C
TJ = +125°C
1.204
3.306
1.202
Output Voltage (V)
Output Voltage (V)
1.203
1.201
1.2
1.199
1.198
3.304
3.302
3.3
3.298
3.296
1.197
3.294
1.196
3.292
1.195
2.5
3
3.5
4
4.5
5
Input Voltage (V)
5.5
6
TJ = -40°C
TJ = +25°C
TJ = +85°C
TJ = +125°C
3.308
3.29
4.25
6.5
4.5
4.75
5
TPS70612
Figure 1. 1.2-V Line Regulation vs VIN and Temperature
6.5
Figure 2. 3.3-V Line Regulation vs VIN and Temperature
TJ = -40°C
TJ = +25°C
TJ = +85°C
TJ = +125°C
1.2
1.1975
1.195
1.1925
1.19
1.1875
TJ = -40°C
TJ = +25°C
TJ = +85°C
TJ = +125°C
3.304
3.3
Output Voltage (V)
Output Voltage (V)
6.25
3.308
1.2025
3.296
3.292
3.288
3.284
1.185
3.28
1.1825
3.276
1.18
3.272
0
20
40
60
80
100
Output Current (mA)
120
140
0
20
40
TPS70612
60
80
100
Input Current (mA)
120
140
TPS70633
Figure 3. 1.2-V Load Regulation vs IOUT and Temperature
Figure 4. 3.3-V Load Regulation vs IOUT and Temperature
1.205
500
480
460
440
420
400
380
360
340
320
300
280
260
240
220
200
3.5
IOUT = 10 mA
IOUT = 150 mA
1.2025
1.2
1.1975
Current Limit (mA)
Output Voltage (V)
6
TPS70633
1.205
1.195
1.1925
1.19
1.1875
1.185
1.1825
1.18
-40
-20
0
20
40
60
80
100
Junction Temperature (qC)
120
140
TPS70612
Figure 5. VOUT vs Temperature
6
5.25 5.5 5.75
Input Voltage (V)
TJ = -40°C
TJ = +25°C
TJ = +85°C
TJ = +125°C
4
4.5
5
5.5
Input Voltage (V)
6
6.5
TPS70612
Figure 6. 1.2-V Current Limit vs VIN and Temperature
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Typical Characteristics (continued)
440
TJ = -40°C
430
TJ = +25°C
420
TJ = +85°C
410
TJ = +125°C
400
390
380
370
360
350
340
330
320
310
300
5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5
Input Voltage (V)
3
Ground Pin Current (PA)
Current Limit (mA)
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.
TJ = +125 qC
TJ = +85 qC
TJ = +25 qC
TJ = -40 qC
2.5
2
1.5
1
0.5
2.5
3
3.5
4
4.5
5
Input Voltage (V)
TPS70633
Figure 7. 3.3-V Current Limit vs VIN and Temperature
6.5
Figure 8. GND Current vs VIN and Temperature
800
TJ = -40°C
TJ = +25°C
TJ = +85°C
TJ = +125°C
2.6
TJ = +125 qC
TJ = +85 qC
TJ = +25 qC
TJ = -40 qC
700
Ground Pin Current (PA)
2.8
Ground Pin Current (PA)
6
TPS70612
3
2.4
2.2
2
1.8
1.6
600
500
400
300
200
1.4
100
1.2
0
1
4
4.25
4.5
4.75
5 5.25 5.5 5.75
Input Voltage (V)
6
6.25
0
6.5
25
TPS70633, EN = open
125
150
Figure 10. GND Current vs IOUT and Temperature
90
0.6
0.5
50
75
100
Output Current (mA)
TPS70612
Figure 9. GND Current vs VIN and Temperature
TJ = +125 qC
TJ = +85 qC
TJ = +25 qC
TJ = -40 qC
80
70
60
0.4
PSRR (dB)
Ground Pin Current (PA)
5.5
0.3
50
40
30
0.2
20
0.1
10
0
2.5
3
3.5
4
4.5
5
Input Voltage (V)
5.5
6
6.5
0
1E+1
Shutdown current, TPS70612
1E+2
1E+3
1E+4
1E+5
Frequency (Hz)
1E+6
1E+7
VOUT = 2.8 V, VIN = 3.8 V, COUT = 2.2 µF
Figure 11. Shutdown Current vs VIN and Temperature
Figure 12. Power-Supply Rejection Ratio vs Frequency
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Typical Characteristics (continued)
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
1E+1
140
130
Time (s)
Noise (PV/Hz)
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.
120
110
100
±50 ±35 ±20 ±5
1E+2
1E+3
Frequency (Hz)
1E+4
1E+5
25
40
55
70
85 100 115 130
Temperature (C)
C019
TPS70612
VOUT = 2.8 V
Figure 14. Start-Up Time vs Temperature
Figure 13. Noise
Channel 2
(200 mV / div)
Channel 2
(200 mV / div)
Channel 4
(50 mA / div)
Channel 4
(100 mA / div)
Time (100 ms / div)
Time (500 ms / div)
Channel 2 = VOUT, channel 4 = IOUT, VIN = 2.7 V
Figure 15. TPS70612 Load Transient (0 mA to 50 mA)
Channel 2 = VOUT, channel 4 = IOUT, VIN = 2.7 V
Figure 16. TPS70612 Load Transient (1 mA to 150 mA)
Channel 2
(200 mV / div)
Channel 2
(200 mV / div)
Channel 4
(50 mA / div)
Channel 4
(100 mA / div)
Time (100 ms / div)
Time (10 ms / div)
Channel 2 = VOUT, channel 4 = IOUT, VIN = 2.7 V
Figure 17. TPS70612 Load Transient (50 mA to 0 mA)
8
10
Channel 2 = VOUT, channel 4 = IOUT, VIN = 2.7 V
Figure 18. TPS70612 Load Transient (50 mA to 150 mA)
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Typical Characteristics (continued)
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.
Channel 2
(200 mV / div)
Channel 2
(200 mV / div)
Channel 4
(50 mA / div)
Channel 4
(100 mA / div)
Time (500 ms / div)
Time (100 ms / div)
Channel 2 = VOUT, channel 4 = IOUT, VIN = 4.3 V
Figure 19. TPS70633 Load Transient (0 mA to 50 mA)
Channel 2 = VOUT, channel 4 = IOUT, VIN = 4.3 V
Figure 20. TPS70633 Load Transient (1 mA to 150 mA)
Channel 2
(200 mV / div)
Channel 2
(200 mV / div)
Channel 4
(50 mA / div)
Channel 4
(50 mA / div)
Time (500 ms / div)
Time (10 ms / div)
Channel 2 = VOUT, channel 4 = IOUT, VIN = 4.3 V
Figure 21. TPS70633 Load Transient (50 mA to 0 mA)
Channel 2 = VOUT, channel 4 = IOUT, VIN = 4.3 V
Figure 22. TPS70633 Load Transient (50 mA to 150 mA)
Channel 2
(50 mV / div)
Channel 2
(50 mV / div)
Channel 4
(2 V / div)
Channel 4
(2 V / div)
Time (50 ms / div)
Time (50 ms / div)
Channel 2 = VOUT, channel 4 = VIN, IOUT = 10 mA
Channel 2 = VOUT, channel 4 = VIN, IOUT = 50 mA
Figure 23. TPS70612 Line Transient (2.7 V to 3.7 V)
Figure 24. TPS70612 Line Transient (2.7 V to 3.7 V)
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Typical Characteristics (continued)
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.
Channel 2
(50 mV / div)
Channel 2
(50 mV / div)
Channel 4
(2 V / div)
Channel 4
(2 V / div)
Time (50 ms / div)
Time (50 ms / div)
Channel 2 = VOUT, channel 4 = VIN, IOUT = 10 mA
Channel 2 = VOUT, channel 4 = VIN, IOUT = 50 mA
Figure 25. TPS70633 Line Transient (4.3 V to 5.3 V)
Figure 26. TPS70633 Line Transient (4.3 V to 5.3 V)
Channel 2
(1 V / div)
Channel 2
(1 V / div)
Channel 1
(500 mV / div)
Channel 1
(1 V / div)
Time (50 ms / div)
Time (500 ms / div)
Channel 1 = EN, channel 2 = VOUT, VIN = 4.3 V, COUT = 2.2 µF,
TPS70633
Figure 27. Power-Up with Enable
Channel 1 = VIN, channel 2 = VOUT, IOUT = 3 mA, TPS70633
Figure 28. Power-Up and Power-Down Response
Channel 2
(1 V / div)
Channel 1
(1 V / div)
Time (500 ms / div)
Channel 1 = VIN, channel 2 = VOUT, IOUT = 150 mA, TPS70633
Figure 29. Power-Up and Power-Down Response
10
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7 Detailed Description
7.1 Overview
The TPS706 series are ultralow quiescent current, low-dropout (LDO) linear regulators. The TPS706 offers
reverse current protection to block any discharge current from the output into the input. The TPS706 also
features current limit and thermal shutdown for reliable operation.
7.2 Functional Block Diagram
OUT
IN
Current
Limit
Thermal
Shutdown
EN
Bandgap
Logic
Device
GND
7.3 Feature Description
7.3.1 Undervoltage Lockout (UVLO)
The TPS706 uses an undervoltage lockout (UVLO) circuit to keep the output shut off until the internal circuitry
operates properly.
7.3.2 Shutdown
The enable pin (EN) is active high. Enable the device by forcing the EN pin to exceed VEN(HI) (0.9 V, minimum).
Turn off the device by forcing the EN pin to drop below 0.4 V. If shutdown capability is not required, connect EN
to IN.
7.3.3 Reverse Current Protection
The TPS706 has integrated reverse current protection. Reverse current protection prevents the flow of current
from the OUT pin to the IN pin when output voltage is higher than input voltage. The reverse current protection
circuitry places the power path in high impedance when the output voltage is higher than the input voltage. This
setting reduces leakage current from the output to the input to 10 nA, typical. The reverse current protection is
always active regardless of the enable pin logic state or if the OUT pin voltage is greater than 1.8 V. Reverse
current can flow if the output voltage is less than 1.8 V and if input voltage is less than the output voltage.
If voltage is applied to the input pin, then the maximum voltage that can be applied to the OUT pin is the lower of
three times the nominal output voltage or 6.5 V. For example, if the 1.2-V output voltage version is used, then the
maximum reverse bias voltage that can be applied to the OUT pin is 3.6 V. If the 3.3-V output voltage version is
used, then the maximum reverse bias voltage that can be applied to the OUT pin is 6.5 V.
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Feature Description (continued)
7.3.4 Internal Current Limit
The TPS706 internal current limit helps protect the regulator during fault conditions. During current limit, the
output sources a fixed amount of current that is largely independent of output voltage. In such a case, the output
voltage is not regulated, and can be measured as (VOUT = ILIMIT × RLOAD). The PMOS pass transistor dissipates
[(VIN – VOUT) × ILIMIT] until a thermal shutdown is triggered and the device turns off. When cool, the device is
turned on by the internal thermal shutdown circuit. If the fault condition continues, the device cycles between
current limit and thermal shutdown; see the Thermal Information section for more details.
The TPS706 is characterized over the recommended operating output current range up to 150 mA. The internal
current limit begins to limit the output current at a minimum of 200 mA of output current.
7.3.5 Thermal Protection
Thermal protection disables the output when the junction temperature rises to approximately 158°C, allowing the
device to cool. When the junction temperature cools to approximately 140°C, the output circuitry is again
enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection
circuit can cycle on and off. This cycling limits the dissipation of the regulator, protecting it from damage as a
result of overheating.
Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate
heatsink. For reliable operation, limit junction temperature to 125°C, maximum. To estimate the margin of safety
in a complete design (including heatsink), increase the ambient temperature until the thermal protection is
triggered; use worst-case loads and signal conditions. For good reliability, thermal protection must trigger at least
35°C above the maximum expected ambient condition of the particular application. This configuration produces a
worst-case junction temperature of 125°C at the highest expected ambient temperature and worst-case load.
The TPS706 internal protection circuitry is designed to protect against overload conditions. This circuitry is not
intended to replace proper heatsinking. Continuously running the TPS706 into thermal shutdown degrades
device reliability.
12
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7.4 Device Functional Modes
7.4.1 Normal Operation
The device regulates to the nominal output voltage under the following conditions:
• The input voltage is at least as high as VIN(min).
• The input voltage is greater than the nominal output voltage added to the dropout voltage.
• The enable voltage has previously exceeded the enable rising threshold voltage and has not decreased
below the enable falling threshold.
• The output current is less than the current limit.
• The device junction temperature is less than the maximum specified junction temperature.
7.4.2 Dropout Operation
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other
conditions are met for normal operation, the device operates in dropout mode. In this mode of operation, the
output voltage is the same as the input voltage minus the dropout voltage. The transient performance of the
device is significantly degraded because the pass device is in the linear region and no longer controls the current
through the LDO. Line or load transients in dropout can result in large output voltage deviations.
7.4.3 Disabled
The device is disabled under the following conditions:
• The enable voltage is less than the enable falling threshold voltage or has not yet exceeded the enable rising
threshold.
• The device junction temperature is greater than the thermal shutdown temperature.
Table 1 shows the conditions that lead to the different modes of operation.
Table 1. Device Functional Mode Comparison
PARAMETER
OPERATING MODE
VIN
VEN
IOUT
TJ
Normal mode
VIN > VOUT(nom) + VDO and
VIN > VIN(min)
VEN > VEN(HI)
IOUT < ILIM
TJ < 125°C
Dropout mode
VIN(min) < VIN < VOUT(nom) + VDO
VEN > VEN(HI)
—
TJ < 125°C
—
VEN < VEN(low)
—
TJ > 158°C
Disabled mode
(any true condition disables the
device)
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS706 consumes low quiescent current and delivers excellent line and load transient performance. This
performance, combined with low noise and good PSRR with little (VIN – VOUT) headroom, makes these devices
ideal for RF portable applications, current limit, and thermal protection. The TPS706 devices are specified from
–40°C to 125°C.
8.1.1 Input and Output Capacitor Considerations
The TPS706 devices are stable with output capacitors with an effective capacitance of 2.0 μF or greater for
output voltages below 1.5 V. For output voltages equal or greater than 1.5 V, the minimum effective capacitance
for stability is 1.5 µF. The maximum capacitance for stability is 47 µF. The equivalent series resistance (ESR) of
the output capacitor must be between 0 Ω and 0.2 Ω for stability.
The effective capacitance is the minimum capacitance value of a capacitor after taking into account variations
resulting from tolerances, temperature, and dc bias effects. X5R- and X7R-type ceramic capacitors are
recommended because these capacitors have minimal variation in value and ESR over temperature.
Although an input capacitor is not required for stability, good analog design practice is to connect a 0.1-µF to
2.2-µF capacitor from IN to GND. This capacitor counteracts reactive input sources and improves transient
response, input ripple rejection, and PSRR.
8.1.2 Dropout Voltage
The TPS706 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout
voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output resistance is the
RDS(ON) of the PMOS pass element. VDO approximately scales with the output current because the PMOS device
functions like a resistor in dropout.
The ground pin current of many linear voltage regulators increases substantially when the device is operated in
dropout. This increase in ground pin current while operating in dropout can be several orders of magnitude larger
than when the device is not in dropout. The TPS706 employs a special control loop that limits the increase in
ground pin current while operating in dropout. This functionality allows for the most efficient operation while in
dropout conditions that can greatly increase battery run times.
8.1.3 Transient Response
As with any regulator, increasing the output capacitor size reduces over- and undershoot magnitude, but
increases transient response duration.
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8.2 Typical Application
VIN
IN
VOUT
OUT
1 mF
2.2 mF
GND
TPS70633
EN
NC
Figure 30. 3.3-V, Low-IQ Rail
8.2.1 Design Requirements
Table 2 summarizes the design requirements for Figure 30.
Table 2. Design Requirements for a 3.3-V, Low-IQ Rail Application
PARAMETER
DESIGN SPECIFICATION
VIN
4.3 V
VOUT
3.3 V
I(IN) (no load)
< 5 µA
IOUT (max)
150 mA
8.2.2 Detailed Design Procedure
Select a 2.2-µF, 10-V X7R output capacitor to satisfy the minimum output capacitance requirement with a 3.3-V
dc bias.
Select a 1.0-µF, 6.3-V X7R input capacitor to provide input noise filtering and eliminate high-frequency voltage
transients.
8.2.3 Application Curves
Channel 2
(200 mV / div)
Channel 2
(1 V / div)
Channel 1
(500 mV / div)
Channel 4
(50 mA / div)
Time (500 ms / div)
Time (50 ms / div)
Channel 2 = VOUT, channel 4 = IOUT, VIN = 4.3 V
Channel 1 = EN, channel 2 = VOUT, VIN = 4.3 V, COUT = 2.2 µF,
TPS70633
Figure 31. TPS70633 Load Transient (50 mA to 150 mA)
Figure 32. Power-Up with Enable
9 Power Supply Recommendations
This device is designed to operate with an input supply range of 2.7 V to 6.5 V. The input voltage range must
provide adequate headroom in order for the device to have a regulated output. This input supply must be wellregulated and stable. If the input supply is noisy, additional input capacitors with low ESR can help improve the
output noise performance.
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10 Layout
10.1 Layout Guidelines
10.1.1 Board Layout Recommendations to Improve PSRR and Noise Performance
Input and output capacitors must be placed as close to the device pins as possible. To improve ac performance
(such as PSRR, output noise, and transient response), TI recommends that the board be designed with separate
ground planes for VIN and VOUT, with the ground plane connected only at the device GND pin. In addition, the
output capacitor ground connection must be connected directly to the device GND pin.
10.1.2 Power Dissipation
The ability to remove heat from the die is different for each package type, presenting different considerations in
the printed circuit board (PCB) layout. The PCB area around the device that is free of other components moves
the heat from the device to the ambient air. Performance data for JEDEC low- and high-K boards are given in the
Thermal Information. Using heavier copper increases the effectiveness in removing heat from the device. The
addition of plated through-holes to heat-dissipating layers also improves the heatsink effectiveness.
Power dissipation depends on input voltage and load conditions. Power dissipation (PD) can be approximated by
the product of the output current times the voltage drop across the output pass element (VIN to VOUT), as shown
in Equation 1.
PD = (VIN – VOUT) × IOUT
(1)
Figure 33 shows the maximum ambient temperature versus the power dissipation of the TPS706. This figure
assumes the device is soldered on a JEDEC standard, high-K layout with no airflow over the board. Actual board
thermal impedances vary widely. If the application requires high power dissipation, having a thorough
understanding of the board temperature and thermal impedances is helpful to ensure the TPS706 does not
operate above a junction temperature of 125°C.
Maximum Ambient Temperature (qC)
125
TPS706, DBV Package
TPS706, DRV Package
100
75
50
0
0.2
0.4
0.6
Power Dissipation (W)
0.8
1
Figure 33. Maximum Ambient Temperature vs Device Power Dissipation
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Layout Guidelines (continued)
Estimating the junction temperature can be done by using the thermal metrics ΨJT and ΨJB, shown in the
Thermal Information. These metrics are a more accurate representation of the heat transfer characteristics of the
die and the package than RθJA. The junction temperature can be estimated with Equation 2.
YJT: TJ = TT + YJT · PD
YJB: TJ = TB + YJB · PD
where:
•
•
•
PD is the power dissipation shown by Equation 1,
TT is the temperature at the center-top of the IC package,
TB is the PCB temperature measured 1 mm away from the IC package on the PCB surface.
(2)
NOTE
Both TT and TB can be measured on actual application boards using a thermo-gun (an
infrared thermometer).
For more information about measuring TT and TB, see the application note Using New Thermal Metrics
(SBVA025), available for download at www.ti.com.
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10.2 Layout Examples
Input
Trace
Input Capacitor
Enable
Trace
Input Ground
Plane
NC
IN
Grounded
Thermal Plane
EN
Thermal Pad
OUT
NC
GND
Output Trace
Grounded
Thermal Plane
Output Ground
Plane
Output Capacitor
Designates thermal vias.
Figure 34. WSON Layout Example
VOUT
VIN
OUT
IN
CIN
COUT
GND
EN
NC
GND PLANE
Represents via used for application-specific connections.
Figure 35. SOT23-5 Layout Example
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 Spice Models
Computer simulation of circuit performance using SPICE is often useful when analyzing the performance of
analog circuits and systems. A SPICE model for the TPS706 is available through the product folders under
Simulation Models.
11.1.2 Device Nomenclature
Table 3. Device Nomenclature (1)
PRODUCT
TPS706xx yyy z
(1)
VOUT
xx is the nominal output voltage. For output voltages with a resolution of 100 mV, two digits
are used in the ordering number; otherwise, three digits are used (for example, 28 = 2.8 V).
yyy is the package designator.
z is the tape and reel quantity (R = 3000, T = 250).
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
11.2 Documentation Support
11.2.1 Related Documentation
SBVU002 — DEM-SOT23LDO Demonstration Fixture
SBVA025 — Using New Thermal Metrics
11.3 Trademarks
All trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS70612DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJC
TPS70612DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJC
TPS70612DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJC
TPS70612DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJC
TPS70615DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIW
TPS70615DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIW
TPS70615DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIW
TPS70615DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIW
TPS70618DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIX
TPS70618DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIX
TPS70618DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIX
TPS70618DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIX
TPS70625DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIY
TPS70625DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIY
TPS70625DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIY
TPS70625DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIY
TPS70628DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJU
TPS70628DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJU
TPS70628DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJU
TPS70628DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJU
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
10-Dec-2020
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS70630DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIZ
TPS70630DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIZ
TPS70630DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIZ
TPS70630DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SIZ
TPS70633DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJA
TPS70633DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJA
TPS70633DRVR
ACTIVE
WSON
DRV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJA
TPS70633DRVT
ACTIVE
WSON
DRV
6
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
SJA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of