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TPS763
SLVS181J – DECEMBER 1998 – REVISED SEPTEMBER 2019
TPS763 Low-Power, 150-mA, Low-Dropout Linear Regulator
1 Features
3 Description
•
•
The TPS763xx family of low-dropout (LDO) voltage
regulators offers the benefits of low-dropout voltage,
low-power operation, and miniaturized packaging.
These regulators feature low dropout voltages and
quiescent currents compared to conventional LDO
regulators. Offered in a 5-pin, small outline
integrated-circuit SOT-23 package, the TPS763xx
series devices are ideal for cost-sensitive designs
and for applications where board space is at a
premium.
1
•
•
•
•
•
•
150-mA, low-dropout regulator
Output voltage: 5 V, 3.8 V, 3.3 V, 3 V, 2.8 V,
2.7 V, 2.5 V, 1.8 V, 1.6 V, and variable
Dropout voltage, typically 300 mV at 150 mA
Thermal protection
Overcurrent limitation
Less than 2-µA quiescent current in shutdown
mode
–40°C to 125°C operating junction temperature
range
5-pin SOT-23 (DBV) package
2 Applications
•
•
•
•
•
Electricity meters
Solar inverters
HVAC systems
Servo drives and motion control
Sensor transmitters
I O − Output Current − mA
TPS76350 Load Transient Response
200
CO = 4.7 µF
ESR = 0.25 Ω
TJ = 25°C
100
0
∆ VO − Change in
Output Voltage − mV
150
A combination of new circuit design and process
innovation has enabled the usual pnp pass transistor
to be replaced by a PMOS pass element. Because
the PMOS pass element behaves as a low-value
resistor, the dropout voltage is low—typically 300 mV
at 150 mA of load current (TPS76333)—and is
directly proportional to the load current. Because the
PMOS pass element is a voltage-driven device, the
quiescent current is low (140 µA maximum) and is
stable over the entire range of output load current
(0 mA to 150 mA). Intended for use in portable
systems such as laptops and cellular phones, the
low-dropout voltage feature and low-power operation
result in a significant increase in system battery
operating life.
The TPS763xx also features a logic-enabled sleep
mode to shut down the regulator, reducing quiescent
current to 1 µA maximum at TJ = 25°C.The
TPS763xx is offered in 1.6-V ,1.8-V, 2.5-V, 2.7-V,
2.8-V, 3-V, 3.3-V, 3.8-V, and 5-V fixed-voltage
versions and in a variable version (programmable
over the range of 1.5 V to 6.5 V).
Device Information(1)
100
PART NUMBER
0
TPS763xx
PACKAGE
SOT-23 (5)
BODY SIZE (NOM)
2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
−100
−200
0
20
40
60
80 100 120 140 160 180 200
t − Time − µs
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS763
SLVS181J – DECEMBER 1998 – REVISED SEPTEMBER 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
9
10
11
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
Absolute Maximum Ratings..................................
ESD Ratings ...........................................................
Recommended Operating Conditions .................
Thermal Information..............................................
Electrical Characteristics .....................................
1
1
1
2
3
3
3
3
3
4
4
11.1 Typical Characteristics ............................................ 7
12 Detailed Description ........................................... 11
12.1 Overview ............................................................... 11
12.2 Functional Block Diagram ..................................... 11
12.3 Feature Description............................................... 11
12.4 Device Functional Modes...................................... 12
13 Application and Implementation........................ 13
13.1 Application Information.......................................... 13
13.2 Typical Application ................................................ 13
14 Power Supply Recommendations ..................... 16
14.1 Power Dissipation and Junction Temperature ...... 16
15 Layout................................................................... 16
15.1 Layout Guidelines ................................................. 16
15.2 Layout Example .................................................... 16
16 Device and Documentation Support ................. 17
16.1
16.2
16.3
16.4
16.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
17
17 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision I (December 2016) to Revision J
•
Page
Changed minimum specification from 4.75 V to 4.85 V in VO parameter for TPS76350, IO = 1 mA to 150 mA row in
Electrical Characteristics table ............................................................................................................................................... 5
Changes from Revision H (January 2004) to Revision I
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
•
Deleted Legacy Applications and Non-Ceramic Capacitor Stability from Applications ......................................................... 1
•
Added Electricity Meters, Solar Inverters, HVAC Systems, Servo Drives and Motion Control, and Sensor
Transmitters to Applications ................................................................................................................................................... 1
•
Deleted Dissipation Ratings table........................................................................................................................................... 3
•
Added Thermal Information table ........................................................................................................................................... 4
2
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Copyright © 1998–2019, Texas Instruments Incorporated
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SLVS181J – DECEMBER 1998 – REVISED SEPTEMBER 2019
5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
IN
1
GND
2
EN
3
5
OUT
4
NC/FB
Pin Functions
PIN
NO.
NAME
I/O
1
IN
I
2
GND
—
3
EN
I
4
NC/FB
—/I
5
OUT
O
DESCRIPTION
Input supply voltage
Ground
Enable input
No connection (fixed-voltage option only) or feedback voltage (TPS76301 only)
Regulated output voltage
6 Specifications
7 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
Input voltage
–0.3
10
V
Voltage at EN
–0.3
VI + 0.3
V
7
V
Voltage on OUT, FB
Peak output current
Internally limited
Operating junction temperature, TJ
–40
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
8 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±250
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
9 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VI
Input voltage (1)
IO
Continuous output current
TJ
Operating junction temperature
(1)
MAX
UNIT
2.7
10
V
0
150
mA
–40
125
°C
To calculate the minimum input voltage for your maximum output current, use the following equation: VI(min) = VO(max) + VDO(max
load)
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SLVS181J – DECEMBER 1998 – REVISED SEPTEMBER 2019
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10 Thermal Information
TPS763xx
THERMAL METRIC (1)
DBV (SOT-23)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
205.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
125.1
°C/W
RθJB
Junction-to-board thermal resistance
34.6
°C/W
ψJT
Junction-to-top characterization parameter
15.2
°C/W
ψJB
Junction-to-board characterization parameter
33.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
11 Electrical Characteristics
over recommended operating free-air temperature range, VI = VO(typ) + 1 V, IO = 1 mA, EN = IN, and CO = 4.7 µF (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
TPS76301
MIN
TYP
MAX
3.25 V > VI ≥ 2.7 V,
2.5 V ≥ VO ≥ 1.5 V,
IO = 1 mA to 75 mA, TJ = 25°C
0.98 × VO
VO
1.02 × VO
3.25 V > VI ≥ 2.7 V,
2.5 V ≥ VO ≥ 1.5 V,
IO = 1 mA to 75 mA
0.97 × VO
VO
1.03 × VO
VI ≥ 3.25 V, 5 V ≥ VO ≥ 1.5 V,
IO = 1 mA to 100 mA, TJ = 25°C
0.98 × VO
VO
1.02 × VO
VI ≥ 3.25 V, 5 V ≥ VO ≥ 1.5 V,
IO = 1 mA to 100 mA
0.97 × VO
VO
1.03 × VO
0.975 × VO
VO
1.025 × VO
0.9625 × VO
VO
1.0375 × VO
VI = 2.7 V, 1 mA < IO < 75 mA,
TJ = 25°C
1.568
1.6
1.632
VI = 2.7 V, 1 mA < IO < 75 mA
1.552
1.6
1.648
VI = 3.25 V, 1 mA < IO < 100 mA,
TJ = 25°C
1.568
1.6
1.632
VI = 3.25 V, 1 mA < IO < 100 mA
1.552
1.6
1.648
VI = 3.25 V, 1 mA < IO < 150 mA,
TJ = 25°C
1.56
1.6
1.64
VI = 3.25 V, 1 mA < IO < 150 mA
1.536
1.6
1.664
VI = 2.7 V, 1 mA < IO < 75 mA,
TJ = 25°C
1.764
1.8
1.836
VI = 2.7 V, 1 mA < IO < 75 mA
1.746
1.8
1.854
VI = 3.25 V, 1 mA < IO < 100 mA,
TJ = 25°C
1.764
1.8
1.836
VI = 3.25 V, 1 mA < IO < 100 mA
1.746
1.8
1.854
VI = 3.25 V, 1 mA < IO < 150 mA,
TJ = 25°C
1.755
1.8
1.845
VI = 3.25 V, 1 mA < IO < 150 mA
1.733
1.8
1.867
VI ≥ 3.25 V, 5 V ≥ VO ≥ 1.5 V,
IO = 1 mA to 150 mA, TJ = 25°C
VI ≥ 3.25 V, 5 V ≥ VO ≥ 1.5 V,
IO = 1 mA to 150 mA
VO
Output voltage
TPS76316
TPS76318
4
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UNIT
V
Copyright © 1998–2019, Texas Instruments Incorporated
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SLVS181J – DECEMBER 1998 – REVISED SEPTEMBER 2019
Electrical Characteristics (continued)
over recommended operating free-air temperature range, VI = VO(typ) + 1 V, IO = 1 mA, EN = IN, and CO = 4.7 µF (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
2.45
2.5
2.55
IO = 1 mA to 100 mA
2.425
2.5
2.575
IO = 1 mA to 150 mA, TJ = 25°C
2.438
2.5
2.562
IO = 1 mA to 150 mA
2.407
2.5
2.593
IO = 1 mA to 100 mA, TJ = 25°C
2.646
2.7
2.754
IO = 1 mA to 100 mA
2.619
2.7
2.781
IO = 1 mA to 150 mA, TJ = 25°C
2.632
2.7
2.767
IO = 1 mA to 150 mA
2.599
2.7
2.801
IO = 1 mA to 100 mA, TJ = 25°C
2.744
2.8
2.856
IO = 1 mA to 100 mA
2.716
2.8
2.884
2.73
2.8
2.87
IO = 1 mA to 100 mA, TJ = 25°C
TPS76325
TPS76327
TPS76328
IO = 1 mA to 150 mA, TJ = 25°C
IO = 1 mA to 150 mA
Output voltage
(continued)
VO
TPS76330
TPS76333
TPS76338
TPS76350
2.695
2.8
2.905
IO = 1 mA to 100 mA, TJ = 25°C
2.94
3
3.06
IO = 1 mA to 100 mA
2.91
3
3.09
IO = 1 mA to 150 mA, TJ = 25°C
2.925
3
3.075
IO = 1 mA to 150 mA
2.888
3
3.112
IO = 1 mA to 100 mA, TJ = 25°C
3.234
3.3
3.366
IO = 1 mA to 100 mA
3.201
3.3
3.399
IO = 1 mA to 150 mA, TJ = 25°C
3.218
3.3
3.382
IO = 1 mA to 150 mA
3.177
3.3
3.423
IO = 1 mA to 100 mA, TJ = 25°C
3.724
3.8
3.876
IO = 1 mA to 100 mA
3.705
3.8
3.895
IO = 1 mA to 150 mA, TJ = 25°C
3.686
3.8
3.914
IO = 1 mA to 150 mA
3.667
3.8
3.933
IO = 1 mA to 100 mA, TJ = 25°C
4.875
5
5.125
IO = 1 mA to 100 mA
4.825
5
5.175
4.85
5
5.15
4.8
5
5.2
85
100
IO = 1 mA to 150 mA, TJ = 25°C
IO = 1 mA to 150 mA
Quiescent current
(GND pin current)
I(Q)
Standby current
IO = 1 mA to 150 mA, TJ = 25°C
(1)
IO = 1 mA to 150 mA (2)
EN < 0.5 V, TJ = 25°C
BW = 300 Hz to 50 kHz, TJ = 25°C, CO = 10 µF (2)
PSRR
Ripple rejection
f = 1 kHz, CO = 10 µF, TJ = 25°C (2)
TJ = 25°C
Output voltage line
regulation
(ΔVO/VO) (3)
VO + 1 V < VI ≤ 10 V, VI ≥ 3.5 V, TJ = 25°C
EN low level input (2)
(1)
(2)
(3)
(3)
Current limit
VIL
1
2
Output noise voltage
EN high level input (2)
0.5
EN < 0.5 V
Vn
VIH
140
0.5
V
µA
µA
140
µV
60
dB
0.8
1.5
0.04%
0.07%
VO + 1 V < VI ≤ 10 V, VI ≥ 3.5 V
0.1%
1.4
0.5
UNIT
2
1.2
A
V
V
V
Minimum IN operating voltage is 2.7 V or VO(typ) + 1 V, whichever is greater.
Test conditions includes output voltage VO = 0 V (for variable device FB is shorted to VO), and pulse duration = 10 mS.
VO (VIm ax - 3.5 V)
´ 1000
100
If VO < 2.5 V and VImax = 10 V, VImin = 3.5 V:
- (VO + 1))
V (V
´ 1000
Line Re g. (mV) = (% / V) ´ O Im ax
100
If VO > 2.5 V and VImax = 10 V, VImin = VO + 1 V:
Line Re g. (mV) = (% / V) ´
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SLVS181J – DECEMBER 1998 – REVISED SEPTEMBER 2019
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Electrical Characteristics (continued)
over recommended operating free-air temperature range, VI = VO(typ) + 1 V, IO = 1 mA, EN = IN, and CO = 4.7 µF (unless
otherwise noted)
PARAMETER
II
EN input current
TYP
MAX
EN = 0 V
TEST CONDITIONS
MIN
–0.01
–0.5
EN = IN
–0.01
–0.5
IO = 0 mA, TJ = 25°C
0.2
IO = 1 mA, TJ = 25°C
3
IO = 50 mA, TJ = 25°C
120
IO = 50 mA
TPS76325
IO = 75 mA, TJ = 25°C
240
0.2
IO = 1 mA, TJ = 25°C
3
100
IO = 50 mA
VDO
Dropout voltage
TPS76333
200
0.2
IO = 1 mA, TJ = 25°C
2
IO = 50 mA, TJ = 25°C
60
IO = 50 mA
90
IO = 150 mA
6
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375
75
113
150
120
IO = 100 mA
IO = 150 mA, TJ = 25°C
250
100
IO = 75 mA
IO = 100 mA, TJ = 25°C
mV
500
IO = 0 mA, TJ = 25°C
IO = 75 mA, TJ = 25°C
188
333
300
IO = 150 mA
TPS76350
125
250
IO = 100 mA
IO = 150 mA, TJ = 25°C
450
166
150
IO = 75 mA
IO = 100 mA, TJ = 25°C
300
600
IO = 0 mA, TJ = 25°C
IO = 75 mA, TJ = 25°C
225
400
360
IO = 150 mA
IO = 50 mA, TJ = 25°C
150
300
IO = 100 mA
IO = 150 mA, TJ = 25°C
µA
200
180
IO = 75 mA
IO = 100 mA, TJ = 25°C
UNIT
150
200
180
225
300
Copyright © 1998–2019, Texas Instruments Incorporated
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SLVS181J – DECEMBER 1998 – REVISED SEPTEMBER 2019
11.1 Typical Characteristics
2.505
1.805
VI = 3.5 V
CI = CO = 4.7 µF
TJ = 25°C
1.800
VO − Output Voltage − V
VO − Output Voltage − V
2.5
2.495
2.49
2.485
2.48
1.795
1.790
1.785
1.780
1.775
1.770
2.475
30
0
90
60
120
150
180
0
60
30
120
90
150
IO − Output Current − mA
IO − Output Current − mA
Figure 1. TPS76325 Output Voltage
vs Output Current
Figure 2. TPS76318 Output Voltage
vs Output Current
180
2.53
5.01
VI = 3.5 V
CI = CO = 4.7 µF
VI = 6 V
CI = CO = 4.7 µF
TJ = 25°C
2.52
VO − Output Voltage − V
5
VO − Output Voltage − V
VI = 3.5 V
CI = CO = 4.7 µF
TJ = 25°C
4.99
4.98
4.97
4.96
2.51
IO = 1 mA
2.5
2.49
IO = 150 mA
2.48
2.47
−55 −35
4.95
0
60
30
120
90
150
180
−15
5
25
45
65
85
105
125
TJ − Junction Temperature − °C
IO − Output Current − mA
Figure 3. TPS76350 Output Voltage
vs Output Current
Figure 4. TPS76325 Output Voltage
vs Output Current
1.82
5.1
VI = 6 V
CI = CO = 4.7 µF
5.08
1.81
IO = 1 mA
5.06
VO − Output Voltage − V
VO − Output Voltage − V
1.8
1.79
IO = 150 mA
1.78
1.77
1.76
5.04
5.02
IO = 1 mA
5
4.98
4.96
IO = 150 mA
4.94
VI = 3.5 V
CI = CO = 4.7 µF
1.75
1.74
−55 −35
−15
5
25
45
65
85
105
4.92
125
4.9
−55 −35
TJ − Junction Temperature − °C
−15
5
25
45
65
85
105
125
TJ − Junction Temperature − °C
Figure 5. TPS76318 Output Voltage
vs Free-Air Temperature
Figure 6. TPS76350 Output Voltage
vs Free-Air Temperature
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Typical Characteristics (continued)
3µVÖHz
1000
TJ = 25°C
Ground Current − µ A
VI = 6 V
CI = CO = 4.7 µF
IO = 0 mA and 150 mA
2.5µVÖHz
CO = 10 µF
IO = 150 mA
2µVÖHz
CO = 4.7 µF
IO = 150 mA
1.5µVÖHz
100
1µVÖHz
CO = 4.7 µF
IO = 1 mA
0.5µVÖHz
CO = 10 µF
IO = 1 mA
10
−55 −35
−15
5
25
45
65
85
105
125
0µVÖHz
250
1k
10k
100k
f − Frequency − Hz
TJ − Junction Temperature − °C
Figure 8. Output Noise vs Frequency
Figure 7. TPS76350 Ground Current
vs Free-Air Temperature
10
600
VI = EN = 2.7 V
CI = CO = 4.7 µF
VDO − Dropout Voltage − mV
Zo − Output Impedance − Ω
500
IO = 1 mA
1
IO = 150 mA
0.1
300
200
1
10
0
−55 −35
1000
100
Figure 9. Output Impedance vs Frequency
IO = 1 mA
IO = 150 mA
10
CO = 4.7 µF
ESR = 1 Ω
TJ = 25°C
100
1k
10 k
100 k
65
85
105
125
3
2
CO = 4.7 µF
ESR = 0.25 Ω
TJ = 25°C
1M
10 M
20
0
Figure 11. TPS76325 Ripple Rejection vs Frequency
dv
1V
=
10 µs
dt
−20
−30
0
f − Frequency − Hz
8
45
4
1
20
−10
10
25
5
30
∆ VO − Change in
Output Voltage − mV
Ripple Rejection − dB
50
40
5
Figure 10. TPS76325 Dropout Voltage
vs Free-Air Temperature
VI − Input Voltage − V
70
60
−15
TJ − Junction Temperature − °C
f − Frequency − kHz
0
1 mA
0 mA
100
CI = CO = 4.7 µF
ESR = 1 Ω
TJ = 25°C
0.1
0.01
150 mA
400
20
40
60
80 100 120 140 160 180 200
t − Time − µs
Figure 12. TPS76318 Line Transient Response
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200
100
0
CO = 4.7 µF
ESR = 0.25 Ω
TJ = 25°C
50
8
6
5
−50
−100
0
0
−50
20
40
60
−100
80 100 120 140 160 180 200
t − Time − µs
0
50
100 150 200 250 300 350 400 450 500
t − Time − µs
Figure 14. TPS76350 Line Transient Response
100
CSR − Compensation Series Resistance − Ω
I O − Output Current − mA
Figure 13. TPS76318 Load Transient Response
200
CO = 4.7 µF
ESR = 0.25 Ω
TJ = 25°C
100
0
150
∆ VO − Change in
Output Voltage − mV
CO = 4.7 µF
ESR = 0.25 Ω
TJ = 25°C
50
0
−150
100
0
−100
Region of Instability
10
0
20
40
60
0.1
Region of Instability
0
50
80 100 120 140 160 180 200
t − Time − µs
Figure 15. TPS76350 Load Transient Response
100
150
200
250
IO − Output Current − mA
Figure 16. Compensation Series Resistance (CSR)
vs Output Current
100
CSR − Compensation Series Resistance − Ω
100
Region of Instability
10
I = 150 mA
CO = 4.7 µF
TJ = 25°C
1
0.1
Region of Instability
0.01
CO = 4.7 µF
TJ = 25°C
1
0.01
−200
CSR − Compensation Series Resistance − Ω
dv
1V
=
10 µs
dt
7
∆ VO − Change in
Output Voltage − mV
∆ VO − Change in
Output Voltage − mV
VI − Input Voltage − V
I O − Output Current − mA
Typical Characteristics (continued)
0
0.1
0.2 0.3 0.4 0.5
0.6 0.7 0.8
0.9
1
Region of Instability
10
CO = 10 µF
1
0.1
Region of Instability
0.01
0
50
100
150
200
250
Added Ceramic Capacitance − µF
IO − Output Current − mA
Figure 17. Compensation Series Resistance (CSR)
vs Added Ceramic Capacitance
Figure 18. Compensation Series Resistance (CSR)
vs Output Current
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Typical Characteristics (continued)
CSR − Compensation Series Resistance − Ω
100
Region of Instability
10
CO = 10 µF
1
0.1
Region of Instability
0.01
0
0.1
0.2 0.3 0.4 0.5
0.6 0.7 0.8
0.9
1
Added Ceramic Capacitance − µF
Figure 19. Compensation Series Resistance (CSR) vs Added Ceramic Capacitance
10
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12 Detailed Description
12.1 Overview
The TPS763xx devices uses a PMOS pass element to dramatically reduce both dropout voltage and supply
current over more conventional PNP pass element LDO designs. The PMOS pass element is a voltagecontrolled device that, unlike a PNP transistor, does not require increased drive current as output current
increases. Supply current in the TPS763xx is essentially constant from no-load to maximum load.
Current limiting and thermal protection prevent damage by excessive output current and/or power dissipation.
The device switches into a constant-current mode at approximately 1 A; further load reduces the output voltage
instead of increasing the output current. The thermal protection shuts the regulator off if the junction temperature
rises above 165°C. Recovery is automatic when the junction temperature drops approximately 25°C below the
high temperature trip point. The PMOS pass element includes a back diode that safely conducts reverse current
when the input voltage level drops below the output voltage level.
A logic low on the enable input, EN shuts off the output and reduces the supply current to less than 2 µA. EN
must be tied high in applications where the shutdown feature is not used.
12.2 Functional Block Diagram
TPS76301
IN
OUT
EN
Current Limit/
Thermal
Protection
VREF
GND
FB
TPS76316/ 18/ 25/ 27/ 28/ 30/ 33/ 38/ 50
IN
OUT
EN
Current Limit/
Thermal
Protection
VREF
GND
12.3 Feature Description
12.3.1 Regulator Protection
The TPS763xx features internal current limiting and thermal protection. During normal operation, the TPS763xx
limits output current to approximately 800 mA. When current limiting engages, the output voltage scales back
linearly until the overcurrent condition ends. While current limiting is designed to prevent gross device failure,
take care not to exceed the power dissipation ratings of the package. If the temperature of the device exceeds
165°C, thermal-protection circuitry shuts it down. Once the device has cooled down to below 140°C, regulator
operation resumes.
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Feature Description (continued)
12.3.2 Enable
The enable signal (VEN) is an active-high digital control that enables the LDO when the enable voltage is past the
rising threshold (VEN ≥ VIH(EN)) and disables the LDO when the enable voltage is below the falling threshold
(VEN ≤ VIL(EN)). The exact enable threshold is between VIH(EN) and VIL(EN) because EN is a digital control. In
applications that do not use the enable control, connect EN to VIN.
12.4 Device Functional Modes
Table 1 provides a quick comparison between the regulation and disabled operation.
Table 1. Device Functional Modes Comparison
OPERATING MODE
(1)
(2)
PARAMETER
VIN
EN
IOUT
TJ
Regulation (1)
VIN > VOUT(nom) + VDO
VEN > VIH(EN)
IOUT < ICL
TJ < Tsd
Disabled (2)
—
VEN < VIL(EN)
—
TJ > Tsd
All table conditions must be met.
The device is disabled when any condition is met.
12.4.1 Regulation
The device regulates the output to the targeted output voltage when all the conditions in Table 1 are met.
12.4.2 Disabled
When disabled, the pass device is turned off, the internal circuits are shutdown.
12
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13 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
13.1 Application Information
The TPS763xx low-dropout (LDO) regulators are part of a family of regulators which have been optimized for use
in battery-operated equipment and feature extremely low dropout voltages, low quiescent current (140 µA), and
an enable input to reduce supply currents to less than 2 µA when the regulator is turned off.
13.2 Typical Application
TPS76301
1
VI
IN
1 µF
OUT
•2 V
3
”0.5 V
5
Vo
R1
EN
FB
+
4
GND
4.7 µF
CSR=1 Ÿ
R2
2
Figure 20. Typical Application Circuit
13.2.1 Design Requirements
Although not required, TI recommends a 0.047-µF or larger ceramic bypass input capacitor, connected between
IN and GND and placed close to the TPS763xx, to improve transient response and noise rejection. A highervalue electrolytic input capacitor may be necessary if large, fast-rise-time load transients are anticipated and the
device is placed several inches from the power source. Follow the programming guidelines from Table 2.
Table 2. Output Voltage Programming Guide
OUTPUT VOLTAGE (V)
(1)
DIVIDER RESISTANCE (kΩ) (1)
R1
R2
2.5
187
169
3.3
301
169
3.6
348
169
4
402
169
5
549
169
6.45
750
169
1% values shown
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13.2.2 Detailed Design Procedure
13.2.2.1 Capacitor Selection
Like all low dropout regulators, the TPS763xx requires an output capacitor connected between OUT and GND to
stabilize the internal loop control. The minimum recommended capacitance value is 4.7 µF and the ESR
(equivalent series resistance) must be between 0.3 Ω and 10 Ω. Capacitor values 4.7 µF or larger are
acceptable, provided the ESR is less than 10 Ω. Solid tantalum electrolytic, aluminum electrolytic, and multilayer
ceramic capacitors are all suitable, provided they meet the requirements described above. Most of the
commercially available 4.7 µF surface-mount solid tantalum capacitors, including devices from Sprague, Kemet,
and Nichico, meet the ESR requirements stated above (see Table 3).
Table 3. Capacitor Selection
MFR
VALUE
MAX ESR
SIZE (H × L × W)
T494B475K016AS
PART NO.
Kemet
4.7 µF
1.5 Ω
1.9 × 3.5 × 2.8
195D106x0016x2T
Sprague
10 µF
1.5 Ω
1.3 × 7 × 2.7
695D106x003562T
Sprague
10 µF
1.3 Ω
2.5 × 7.6 × 2.5
AVX
4.7 µF
0.6 Ω
2.6 × 6 × 3.2
TPSC475K035R0600
13.2.2.2 Output Voltage Programming
The output voltage of the TPS76301 adjustable regulator is programmed using an external resistor divider as
shown in Figure 21. The output voltage is calculated using Equation 1.
R1 ö
æ
VO = 0.995 ´ Vref ´ ç 1 +
÷
R2
è
ø
where
•
•
Vref = 1.192 V typical (the internal reference voltage)
0.995 is a constant used to center the load regulator (1%)
(1)
Resistors R1 and R2 must be chosen for approximately 7-µA divider current. Lower value resistors can be used
but offer no inherent advantage and waste more power. Higher values must be avoided as leakage currents at
FB increase the output voltage error. TI recommends choosing a design procedure of R2 = 169 kΩ to set the
divider current at 7 µA and then calculate R1 using Equation 2.
æ
ö
VO
R1 = ç
- 1÷ ´ R2
è 0.995 ´ Vref
ø
(2)
TPS76301
1
VI
IN
1 µF
OUT
•2 V
”0.5 V
3
5
Vo
R1
EN
FB
4
GND
+
4.7 µF
R2
CSR=1 Ÿ
2
Figure 21. TPS76301 Adjustable LDO Regulator Programming
14
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13.2.2.3 Reverse Current
The TPS763xx pass element has a built-in back diode that safely conducts reverse currents when the input
voltage drops below the output voltage (for example, during power down). Current is conducted from the output
to the input and is not internally limited. If extended reverse voltage is anticipated, external limiting might be
appropriate.
13.2.3 Application Curves
100
CSR − Compensation Series Resistance − Ω
CSR − Compensation Series Resistance − Ω
100
Region of Instability
10
CO = 4.7 µF
TJ = 25°C
1
0.1
Region of Instability
0.01
Region of Instability
10
0.1
Region of Instability
0.01
0
50
100
150
200
CO = 10 µF
1
250
0
0.1
0.2 0.3 0.4 0.5
0.6 0.7 0.8
0.9
1
IO − Output Current − mA
Added Ceramic Capacitance − µF
Figure 22. Compensation Series Resistance (CSR)
vs Output Current
Figure 23. Compensation Series Resistance (CSR) vs
Added Ceramic Capacitance
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14 Power Supply Recommendations
A 1-µF or larger input capacitor must be used.
14.1 Power Dissipation and Junction Temperature
Specified regulator operation is assured to a junction temperature of 125°C; the maximum junction temperature
allowable to avoid damaging the device is 150°C. This restriction limits the power dissipation the regulator can
handle in any given application. To ensure the junction temperature is within acceptable limits, calculate the
maximum allowable dissipation, PD(max), and the actual dissipation, PD, which must be less than or equal to
PD(max).
The maximum-power-dissipation limit is determined using Equation 3.
T max - TA
PD(max) = J
RqJA
where
•
•
•
TJmax is the maximum allowable junction temperature
RθJA is the thermal resistance junction-to-ambient for the package, see Thermal Information
TA is the ambient temperature
The regulator dissipation is calculating using Equation 4.
PD = (VI - VO ) ´ IO
(3)
(4)
Power dissipation resulting from quiescent current is negligible.
15 Layout
15.1 Layout Guidelines
•
•
•
Place input and output capacitors as close to the device as possible.
Use copper planes for device connections to optimize thermal performance.
Place thermal vias around the device to distribute the heat.
15.2 Layout Example
VOUT
VIN
1
CIN
5
COUT
2
3
4
EN
GND PLANE
Represents via used for
application specific connections
Figure 24. Layout Example for DBV Package
16
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16 Device and Documentation Support
16.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
16.2 Community Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
16.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
16.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
16.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
17 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS76301DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PAZI
Samples
TPS76301DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PAZI
Samples
TPS76301DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PAZI
Samples
TPS76316DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBHI
Samples
TPS76316DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBHI
Samples
TPS76316DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBHI
Samples
TPS76318DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBAI
Samples
TPS76318DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBAI
Samples
TPS76318DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBAI
Samples
TPS76318DBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBAI
Samples
TPS76325DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBBI
Samples
TPS76325DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBBI
Samples
TPS76325DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBBI
Samples
TPS76327DBVR
LIFEBUY
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBCI
TPS76327DBVT
LIFEBUY
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBCI
TPS76327DBVTG4
LIFEBUY
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBCI
TPS76328DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBDI
TPS76328DBVT
LIFEBUY
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBDI
TPS76330DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBII
Samples
TPS76330DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBII
Samples
TPS76333DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBEI
Samples
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
10-Dec-2022
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS76333DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBEI
Samples
TPS76333DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBEI
Samples
TPS76333DBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBEI
Samples
TPS76338DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBFI
Samples
TPS76338DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBFI
Samples
TPS76350DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBGI
Samples
TPS76350DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBGI
Samples
TPS76350DBVT
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBGI
Samples
TPS76350DBVTG4
ACTIVE
SOT-23
DBV
5
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
PBGI
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of