TPS768xxQ
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SLVS211L – JUNE 1999 – REVISED JANUARY 2006
FAST TRANSIENT RESPONSE, 1-A LOW-DROPOUT VOLTAGE REGULATORS
FEATURES
•
•
•
•
•
•
•
•
•
DESCRIPTION
Input Voltage Range: 2.7 V to 10 V
Low-Dropout Voltage: 230 mV typical at 1 A
(TPS76850)
2% Tolerance Over Specified Conditions for
Fixed-Output Versions
Open Drain Power Good (See TPS767xx for
Power-On Reset With 200-ms Delay Option)
Ultralow 85 µA Typical Quiescent Current
Available in 1.5-V, 1.8-V, 2.5-V, 2.7-V, 2.8-V,
3.0-V, 3.3-V, 5.0-V Fixed Output and
Adjustable (1.2 V to 5.5 V) Versions
Fast Transient Response
Thermal Shutdown Protection
SOIC-8 (D) and TSSOP-20 (PWP) Package
D PACKAGE
(Top View)
GND
1
8
PG
EN
2
7
FB/NC
IN
3
6
OUT
IN
4
5
OUT
This device is designed to have a fast transient
response and be stable with 10 µF capacitors. This
combination provides high performance at a
reasonable cost.
Since the PMOS device behaves as a low-value
resistor, the dropout voltage is very low (typically
230 mV at an output current of 1 A for the TPS76850)
and is directly proportional to the output current.
Additionally, because the PMOS pass element is a
voltage-driven device, the quiescent current is very
low and independent of output loading (typically
85 µA over the full range of output current, 0 mA to
1 A). These two key specifications yield a significant
improvement in operating life for battery-powered
systems. This LDO family also features a shutdown
mode; applying a TTL high signal to EN (enable)
shuts down the regulator, reducing the quiescent
current to less than 1 µA at TJ = 25°C.
Power good (PG) is an active high output, which can
be used to implement a power-on reset or a
low-battery indicator.
TPS768xx
VI
6
IN
PG
16
PG
7
IN
OUT
0.1 µF
PWP PACKAGE
(Top View)
5
EN
OUT
14
VO
13
+
GND/HSINK
1
20
GND/HSINK
GND/HSINK
2
19
GND/HSINK
GND
3
18
NC
NC
4
17
NC
EN
5
16
PG
IN
6
15
FB/NC
IN
7
14
OUT
NC
8
13
OUT
GND/HSINK
9
12
GND/HSINK
GND/HSINK
10
11
GND/HSINK
GND
Co
10 µF
3
Figure 1. Typical Application Configuration
(For Fixed Output Options)
NC = No Internal Connection
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1999–2006, Texas Instruments Incorporated
TPS768xxQ
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SLVS211L – JUNE 1999 – REVISED JANUARY 2006
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated
circuits be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
ORDERING INFORMATION (1)
VOUT (2)
PRODUCT
TPS768xxQyyyz
(1)
(2)
XX is nominal output voltage (for example, 28 = 2.8 V, 285 = 2.85 V, 01 = Adjustable).
YYY is package designator.
Z is package quantity.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
Custom output voltages are available; minimum order quantities may apply. Contact factory for details and availability.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
VALUE
Input voltage range, VI (2)
–0.3 V to 13.5 V
Voltage range at EN
–0.3 V to VI + 0.3 V
Maximum PG voltage
16.5 V
Peak output current
Internally limited
Continuous total power dissipation
See Dissipation Rating Table
Output voltage, VO (OUT, FB)
7V
Operating junction temperature range, TJ
–40°C to +125°C
Storage temperature range, Tstg
–65°C to +150°C
ESD rating, HBM
(1)
(2)
2 kV
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network terminal ground.
DISSIPATION RATING TABLE—FREE-AIR TEMPERATURES
PACKAGE
D
PWP (1)
(1)
AIR FLOW
(CFM)
TA < +25°C
POWER RATING
DERATING FACTOR
ABOVE TA = +25°C
TA = +70°C
POWER RATING
TA = +85°C
POWER RATING
0
568.18 mW
5.6818 mW/°C
312.5 mW
227.27 mW
250
904.15 mW
9.0415 mW/°C
497.28 mW
361.66 mW
0
3.1 W
30.7 mW/°C
1.7 W
1.2 W
250
4.1 W
41.2 mW/°C
2.3 W
1.6 W
This parameter is measured with the recommended copper heat sink pattern on a 4-layer, 5-in × 5-in PCB, 1 oz. copper, 4-in × 4-in
coverage (4 in2).
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
Input voltage, VI (1)
2.7
10
V
Output voltage range, VO
1.2
5.5
V
0
1.0
A
–40
+125
°C
Output current, IO (2)
Operating junction temperature, TJ (2)
(1)
(2)
2
UNIT
Minimum VIN = VOUT + VDO or 2.7 V, whichever is greater.
Continuous current and operating junction temperature are limited by internal protection circuitry, but it is not recommended that the
device operate under conditions beyond those specified in this table for extended periods of time.
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ELECTRICAL CHARACTERISTICS
over recommended operating free-air temperature range, VI = VO(typ)+ 1 V, IO = 1 mA, EN = 0 V, CO = 10 µF (unless otherwise
noted).
PARAMETER
TEST CONDITIONS
VOUT Accuracy
–40°C ≤ TJ ≤ +125°C, VO + 1 V ≤ VIN ≤ 10V (1),
10 µA ≤ IO ≤ 1A
Quiescent current (GND current) EN = 0V
Output voltage line regulation (∆VO/VO)
(1)
(1) (2)
MIN
TYP
MAX
(0.98)VO
VO
(1.02)VO
10 µA < IO < 1 A, TJ = +25°C
85
IO = 1 A, TJ = –40°C to +125°C
125
VO + 1 V < VI ≤ 10 V, TJ = +25°C
Load regulation
Output noise voltage (TPS76818)
BW = 200 Hz to 100 kHz, CO = 10 µF,
IC = 1 A, TJ = +25°C
Output current limit
VO = 0 V
1.2
Thermal shutdown junction temperature
VEN = VI, TJ = +25°C, 2.7 V < VI < 10 V
Standby current
TPS76801
%/V
mV
55
µVrms
1.7
Power
Good
(PG)
1
µA
2
f = 1 kHz, CO = 10 µF, TJ = +25°C
IO(PG) = 300 µA
Trip threshold voltage
VO decreasing
Hysteresis voltage
Measured at VO
Output low voltage
VI = 2.7 V, IO(PG) = 1 mA
Leakage current
V(PG) = 5 V
Enable pin current (IEN)
V
TPS76828
TPS76830
(3)
TPS76833
TPS76850
(1)
(2)
(3)
60
0.5
1
VEN = VI
1
IO = 1 A, TJ = +25°C
0
%VO
V
1
µA
1
µA
500
825
450
IO = 1 A, TJ = –40°C to +125°C
IO = 1 A, TJ = +25°C
%VO
0.4
1
IO = 1 A, TJ = –40°C to +125°C
IO = 1 A, TJ = +25°C
V
98
0.15
V
dB
1.1
92
VEN = 0 V
µA
nA
0.9
(1)
A
°C
1.7
Minimum input voltage for valid PG
Dropout voltage
2
150
Low-level enable input voltage
Power-supply ripple rejection
µA
3
10
VFB = 1.5 V
High-level enable input voltage
V
0.01
VEN = VI, TJ = –40°C to +125°C,
2.7 V < VI < 10 V
FB pin current, IFB
UNIT
675
350
IO = 1 A, TJ = –40°C to +125°C
mV
575
IO = 1 A, TJ = +25°C
230
IO = 1 A, TJ = –40°C to +125°C
380
Minimum IN operating voltage is 2.7 V or VO(typ) + 1 V, whichever is greater. Maximum IN voltage 10 V.
V Imax2.7V
Line Reg. (mV) (% V) V O
1000
100
If VO≤ 1.8 V then VImax = 10 V, VImin = 2.7 V:
V ImaxVO1V
Line Reg. (mV) (% V) V O
1000
100
If VO≥ 2.5 V then VImax = 10 V, VImin = VO + 1 V:
IN voltage equals VO(typ) – 100 mV; TPS76801 output voltage set to 3.3 V nominal with external resistor divider. TPS76815, TPS76818,
TPS76825, and TPS76827 dropout voltage limited by input voltage range limitations (that is, TPS76830 input voltage must drop to 2.9 V
for the purpose of this test).
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FUNCTIONAL BLOCK DIAGRAM—Adjustable Version
IN
EN
PG
_
+
OUT
+
_
R1
Vref = 1.1834 V
FB/NC
R2
GND
External to the device
FUNCTIONAL BLOCK DIAGRAM—Fixed-Voltage Version
IN
EN
PG
_
+
OUT
+
_
R1
Vref = 1.1834 V
R2
GND
Terminal Functions
NAME
4
SOIC-8 (D)
PIN NO.
TSSOP-20 (PWP)
PIN NO.
DESCRIPTION
GND
1
3
GND/HSINK
—
1, 2, 9-12, 19, 20
Regulator ground
NC
—
4, 8, 17, 18
No connect
Regulator ground and heatsink
EN
2
5
Enable input
IN
3, 4
6, 7
Input voltage
OUT
5, 6
13, 14
FB/NC
7
15
Feedback input voltage for adjustable device (no connect for fixed options)
PG
8
16
PG output
Regulated output voltage
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TYPICAL CHARACTERISTICS
TPS76833
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
TPS76815
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
3.2835
1.4985
VI = 4.3 V
TA = 25°C
1.4980
3.2825
VO − Output Voltage − V
VO − Output Voltage − V
3.2830
3.2820
3.2815
3.2810
3.2805
1.4975
1.4970
1.4965
1.4960
1.4955
3.2800
1.4950
0
0.1
0.2 0.3 0.4 0.5 0.6 0.7
IO − Output Current − A
0.8
0.9
1
0
0.1
0.2 0.3
0.4
0.5
0.6 0.7
0.8
0.9
1
IO − Output Current − A
Figure 2.
Figure 3.
TPS76825
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
TPS76833
OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
2.4960
3.32
VI = 3.5 V
TA = 25°C
2.4955
VI = 4.3 V
3.31
VO − Output Voltage − V
2.4950
VO − Output Voltage − V
VI = 2.7 V
TA = 25°C
2.4945
2.4940
2.4935
2.4930
3.30
3.29
IO = 1 A
IO = 1 mA
3.28
3.27
3.26
2.4925
2.4920
0
0.1 0.2 0.3
0.4 0.5
0.6 0.7
0.8 0.9
1
3.25
−60 −40 −20
0
20
40
60
80
100 120 140
TA − Free-Air Temperature − °C
IO − Output Current − A
Figure 4.
Figure 5.
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TYPICAL CHARACTERISTICS (continued)
TPS76815
OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
TPS76825
OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
1.515
2.515
VI = 3.5 V
VI = 2.7 V
2.510
VO − Output Voltage − V
VO − Output Voltage − V
1.510
1.505
1.500
IO = 1 A
IO = 1 mA
1.495
1.490
2.505
2.500
IO = 1 A
2.495
IO = 1 mA
2.490
2.485
1.485
−60 −40 −20
0
20
40
60
80
2.480
−60 −40
100 120 140
TA − Free-Air Temperature − °C
−20
0
20
40
60
80
100 120
TA − Free-Air Temperature − °C
Figure 6.
Figure 7.
TPS76833
GROUND CURRENT
vs
FREE-AIR TEMPERATURE
TPS76815
GROUND CURRENT
vs
FREE-AIR TEMPERATURE
92
100
VI = 2.7 V
90
VI = 4.3 V
95
86
84
82
IO = 1 mA
80
IO = 1 A
78
IO = 500 mA
76
Ground Current − µ A
Ground Current − µ A
88
90
IO = 1 A
IO = 1 mA
85
IO = 500 mA
80
74
72
−60 −40 −20
0
20
40
60
80
100 120 140
75
−60 −40 −20
TA − Free-Air Temperature − °C
Figure 8.
6
0
20
40
Figure 9.
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80
100 120 140
TA − Free-Air Temperature − °C
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TYPICAL CHARACTERISTICS (continued)
TPS76833
POWER-SUPPLY RIPPLE REJECTION
vs
FREQUENCY
TPS76833
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
10−5
VI = 4.3 V
Co = 10 µF
IO = 1 A
TA = 25°C
80
70
Output Spectral Noise Density − µV Hz
PSRR − Power Supply Ripple Rejection − dB
90
60
50
40
30
20
10
0
−10
10
100
1k
10k
100k
VI = 4.3 V
Co = 10 µF
TA = 25°C
IO = 7 mA
10−6
IO = 1 A
10−7
10−8
102
1M
103
f − Frequency − Hz
Figure 10.
Figure 11.
INPUT VOLTAGE (MIN)
vs
OUTPUT VOLTAGE
TPS76833
OUTPUT IMPEDANCE
vs
FREQUENCY
0
VI = 4.3 V
Co = 10 µF
TA = 25°C
IO = 1 A
Zo − Output Impedance − Ω
TA = 25°C
VI − Input Voltage (Min) − V
105
f − Frequency − Hz
4
TA = 125°C
3
TA = −40°C
2.7
2
1.5
104
1.75
2
2.25
2.5
2.75
3
3.25
3.5
IO = 1 mA
10−1
IO = 1 A
10−2
101
VO − Output Voltage − V
Figure 12.
102
103
104
f − Frequency − kHz
105
106
Figure 13.
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TYPICAL CHARACTERISTICS (continued)
TPS76833
DROPOUT VOLTAGE
vs
FREE-AIR TEMPERATURE
TPS76815
LINE TRANSIENT RESPONSE
VI − Input Voltage − V
103
IO = 1 A
101
2.7
IO = 10 mA
100
∆ VO − Change in
Output Voltage − mV
VDO − Dropout Voltage − mV
102
3.7
10−1
IO = 0
Co = 10 µF
10−2
−60 −40 −20
0
20
40
60
80 100 120 140
10
0
Co = 10 µF
TA = 25°C
−10
0
20
40
60
TA − Free-Air Temperature − °C
Figure 15.
TPS76815
LOAD TRANSIENT RESPONSE
TPS76833
LINE TRANSIENT RESPONSE
∆ VO − Change in
Output Voltage − mV
Co = 10 µF
TA = 25°C
50
0
−50
VI − Input Voltage − V
Figure 14.
100
∆ VO − Change in
Output Voltage − mV
I O − Output Current − A
Co = 10 µF
TA = 25°C
5.3
4.3
−100
1
0.5
0
0
100 200 300 400 500 600 700 800 900 1000
t − Time − µs
10
0
−10
0
Figure 16.
8
80 100 120 140 160 180 200
t − Time − µs
20
40
60
80 100 120 140 160 180 200
t − Time − µs
Figure 17.
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TYPICAL CHARACTERISTICS (continued)
TPS76833
OUTPUT VOLTAGE
vs
TIME (AT START-UP)
TPS76833
LOAD TRANSIENT RESPONSE
VO− Output Voltage − V
4
Co = 10 µF
TA = 25°C
50
0
−50
−100
Co = 10 µF
IO = 1 A
TA = 25°C
3
2
1
0
1
Enable Pulse − V
I O − Output Current − A
∆ VO − Change in
Output Voltage − mV
100
0.5
0
0
100 200 300 400 500 600 700 800 900 1000
t − Time − µs
0
0.1
0.2 0.3
0.4 0.5 0.6 0.7 0.8
t − Time − ms
0.9
1
Figure 18.
Figure 19.
TPS76801
DROPOUT VOLTAGE
vs
INPUT VOLTAGE
TEST CIRCUIT FOR TYPICAL REGIONS OF STABILITY
(Figure 22 through Figure 25)
(Fixed Output Options)
900
IO = 1 A
VDO − Dropout Voltage − mV
800
700
To Load
VI
600
IN
OUT
+
500
TA = 25°C
400
EN
TA = 125°C
Co
GND
RL
ESR
300
200
TA = −40°C
100
0
2.5
3
3.5
4
VI − Input Voltage − V
4.5
5
Figure 20.
Figure 21.
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TYPICAL CHARACTERISTICS (continued)
Equivalent series resistance (ESR) refers to the total series resistance, including the ESR of the capacitor, any
series resistance added externally, and PWB trace resistance to CO.
TYPICAL REGION OF STABILITY
EQUIVALENT SERIES RESISTANCE
vs
OUTPUT CURRENT
TYPICAL REGION OF STABILITY
EQUIVALENT SERIES RESISTANCE
vs
OUTPUT CURRENT
10
ESR − Equivalent Series Resistance − Ω
ESR − Equivalent Series Resistance − Ω
10
Region of Instability
1
VO = 3.3 V
Co = 4.7 µF
VI = 4.3 V
TA = 25°C
Region of Stability
0.1
VO = 3.3 V
Co = 4.7 µF
VI = 4.3 V
TJ = 125°C
Region of Stability
0.1
Region of Instability
0.01
0
200
400
600
800
0
1000
200
400
600
800
IO − Output Current − mA
IO − Output Current − mA
Figure 22.
Figure 23.
TYPICAL REGION OF STABILITY
EQUIVALENT SERIES RESISTANCE
vs
OUTPUT CURRENT
TYPICAL REGION OF STABILITY
EQUIVALENT SERIES RESISTANCE
vs
OUTPUT CURRENT
1000
10
ESR − Equivalent Series Resistance − Ω
10
ESR − Equivalent Series Resistance − Ω
1
Region of Instability
0.01
Region of Instability
1
VO = 3.3 V
Co = 22 µF
VI = 4.3 V
TA = 25°C
Region of Stability
0.1
Region of Instability
Region of Instability
1
VO = 3.3 V
Co = 22 µF
VI = 4.3 V
TJ = 125°C
Region of Stability
0.1
Region of Instability
0.01
0.01
0
10
Region of Instability
200
400
600
800
1000
0
200
400
600
IO − Output Current − mA
IO − Output Current − mA
Figure 24.
Figure 25.
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APPLICATION INFORMATION
The TPS768xxQ family includes eight fixed-output voltage regulators (1.5 V, 1.8 V, 2.5 V, 2.7 V, 2.8 V, 3.0 V,
3.3 V, and 5.0 V), and offers an adjustable device, the TPS76801 (adjustable from 1.2 V to 5.5 V).
DEVICE OPERATION
The TPS768xxQ features very low quiescent current, which remains virtually constant even with varying loads.
Conventional LDO regulators use a PNP pass element, the base current of which is directly proportional to the
load current through the regulator (IB = IC/β). The TPS768xxQ uses a PMOS transistor to pass current; because
the gate of the PMOS is voltage driven, operating current is low and invariable over the full load range.
Another pitfall associated with the PNP-pass element is its tendency to saturate when the device goes into
dropout. The resulting drop in β forces an increase in IB to maintain the load. During power up, this translates to
large start-up currents. Systems with limited supply current may fail to start up. In battery-powered systems, it
means rapid battery discharge when the voltage decays below the minimum required for regulation. The
TPS768xxQ quiescent current remains low even when the regulator drops out, eliminating both problems.
The TPS768xxQ family also features a shutdown mode that places the output in the high-impedance state
(essentially equal to the feedback-divider resistance) and reduces quiescent current to 2 µA. If the shutdown
feature is not used, EN should be tied to ground.
MINIMUM LOAD REQUIREMENTS
The TPS768xxQ family is stable even at zero load; no minimum load is required for operation.
FB - PIN CONNECTION (ADJUSTABLE VERSION ONLY)
The FB pin is an input pin to sense the output voltage and close the loop for the adjustable option. The output
voltage is sensed through a resistor divider network to close the loop as shown in Figure 27. Normally, this
connection should be as short as possible; however, the connection can be made near a critical circuit to
improve performance at that point. Internally, FB connects to a high-impedance wide-bandwidth amplifier and
noise pickup feeds through to the regulator output. Routing the FB connection to minimize/avoid noise pickup is
essential.
EXTERNAL CAPACITOR REQUIREMENTS
An input capacitor is not usually required; however, a ceramic bypass capacitor (0.047 µF or larger) improves
load transient response and noise rejection if the TPS768xxQ is located more than a few inches from the power
supply. A higher-capacitance electrolytic capacitor may be necessary if large (hundreds of milliamps) load
transients with fast rise times are anticipated.
Like all low dropout regulators, the TPS768xxQ requires an output capacitor connected between OUT and GND
to stabilize the internal control loop. The minimum recommended capacitance value is 10 µF and the ESR
(equivalent series resistance) must be between 60 mΩ and 1.5 Ω. Capacitor values 10 µF or larger are
acceptable, provided the ESR is less than 1.5Ω . Solid tantalum electrolytic, aluminum electrolytic, and multilayer
ceramic capacitors are all suitable, provided they meet the requirements described above.
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APPLICATION INFORMATION (continued)
TPS768xx
6
VI
IN
7
C1
0.1 µF
PG
16
PG
250 kΩ
IN
OUT
5
EN
OUT
14
VO
13
+
Co
10 µF
GND
3
Figure 26. Typical Application Circuit (Fixed Versions)
The output voltage of the TPS76801 adjustable regulator is programmed using an external resistor divider as
shown in Figure 27. The output voltage is calculated using:
V
O
V
ref
1 R1
R2
where:
Vref = 1.1834 V typ (the internal reference voltage)
(1)
Resistors R1 and R2 should be chosen for approximately 50-µA divider current. Lower value resistors can be
used but offer no inherent advantage and waste more power. Higher values should be avoided as leakage
currents at FB increase the output voltage error. The recommended design procedure is to choose
R2 = 30.1 kΩto set the divider current at 50 µA and then calculate R1 using:
R1
V
V
O 1
ref
R2
(2)
OUTPUT VOLTAGE
PROGRAMMING GUIDE
TPS76801
VI
0.1 µF
IN
PG
PG
250 kΩ
≥ 1.7 V
≤ 0.9 V
OUTPUT
VOLTAGE
EN
OUT
VO
R1
FB / NC
GND
R1
R2
UNIT
2.5 V
33.2
30.1
kΩ
3.3 V
53.6
30.1
kΩ
3.6 V
61.9
30.1
kΩ
4.75 V
90.8
30.1
kΩ
R2
Figure 27. TPS76801 Adjustable LDO Regulator Programming
POWER-GOOD INDICATOR
The TPS768xxQ features a power-good (PG) output that can be used to monitor the status of the regulator. The
internal comparator monitors the output voltage: when the output drops to between 92% and 98% of its nominal
regulated value, the PG output transistor turns on, taking the signal low. The open-drain output requires a pullup
resistor. If not used, it can be left floating. PG can be used to drive power-on reset circuitry or used as a
low-battery indicator. PG does not assert itself when the regulated output voltage falls out of the specified 2%
tolerance, but instead reports an output voltage low, relative to its nominal regulated value.
12
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TPS768xxQ
www.ti.com
SLVS211L – JUNE 1999 – REVISED JANUARY 2006
APPLICATION INFORMATION (continued)
REGULATOR PROTECTION
The TPS768xxQ PMOS-pass transistor has a built-in back diode that conducts reverse currents when the input
voltage drops below the output voltage (for example, during power-down). Current is conducted from the output
to the input and is not internally limited. When extended reverse voltage is anticipated, external limiting may be
appropriate.
The TPS768xxQ also features internal current limiting and thermal protection. During normal operation, the
TPS768xxQ limits output current to approximately 1.7 A. When current limiting engages, the output voltage
scales back linearly until the overcurrent condition ends. While current limiting is designed to prevent gross
device failure, care should be taken not to exceed the power dissipation ratings of the package. If the
temperature of the device exceeds +150°C (typ), thermal-protection circuitry shuts it down. Once the device has
cooled below +130°C (typ), regulator operation resumes.
POWER DISSIPATION AND JUNCTION TEMPERATURE
Specified regulator operation is assured to a junction temperature of +125°C; the maximum junction temperature
should be restricted to +125°C under normal operating conditions. This restriction limits the power dissipation the
regulator can handle in any given application. To ensure the junction temperature is within acceptable limits,
calculate the maximum allowable dissipation, PDmax, and the actual dissipation, PD, which must be less than or
equal to PDmax.
The maximum-power-dissipation limit is determined using the following equation:
T max T
A
P max J
D
R
JA
(3)
Where:
• TJmax is the maximum allowable junction temperature.
• RθJA is the thermal resistance junction-to-ambient for the package; that is, 172°C/W for the 8-pin SOIC (D)
and 32.6°C/W for the 20-pin TSSOP (PWP) with no airflow.
• TA is the ambient temperature.
The regulator dissipation is calculated using:
P
D
V V
I
I
O
O
(4)
Power dissipation resulting from quiescent current is negligible. Excessive power dissipation will trigger the
thermal protection circuit.
Submit Documentation Feedback
13
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS76801QD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76801
Samples
TPS76801QDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76801
Samples
TPS76801QDRG4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76801
Samples
TPS76801QPWP
ACTIVE
HTSSOP
PWP
20
70
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76801
Samples
TPS76801QPWPG4
ACTIVE
HTSSOP
PWP
20
70
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76801
Samples
TPS76801QPWPR
ACTIVE
HTSSOP
PWP
20
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76801
Samples
TPS76801QPWPRG4
ACTIVE
HTSSOP
PWP
20
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76801
Samples
TPS76815QD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76815
Samples
TPS76815QDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76815
Samples
TPS76815QPWP
ACTIVE
HTSSOP
PWP
20
70
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76815
Samples
TPS76815QPWPR
ACTIVE
HTSSOP
PWP
20
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76815
Samples
TPS76818QD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76818
Samples
TPS76818QDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76818
Samples
TPS76818QPWP
ACTIVE
HTSSOP
PWP
20
70
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76818
Samples
TPS76818QPWPR
ACTIVE
HTSSOP
PWP
20
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76818
Samples
TPS76825QD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76825
Samples
TPS76825QDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76825
Samples
TPS76825QPWP
ACTIVE
HTSSOP
PWP
20
70
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76825
Samples
TPS76825QPWPR
ACTIVE
HTSSOP
PWP
20
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76825
Samples
TPS76827QD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76827
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS76828QD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76828
Samples
TPS76830QD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76830
Samples
TPS76830QPWP
ACTIVE
HTSSOP
PWP
20
70
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76830
Samples
TPS76833QD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76833
Samples
TPS76833QDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76833
Samples
TPS76833QPWP
ACTIVE
HTSSOP
PWP
20
70
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76833
Samples
TPS76833QPWPG4
ACTIVE
HTSSOP
PWP
20
70
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76833
Samples
TPS76833QPWPR
ACTIVE
HTSSOP
PWP
20
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76833
Samples
TPS76833QPWPRG4
ACTIVE
HTSSOP
PWP
20
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76833
Samples
TPS76850QD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76850
Samples
TPS76850QDG4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76850
Samples
TPS76850QDR
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
76850
Samples
TPS76850QPWP
ACTIVE
HTSSOP
PWP
20
70
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76850
Samples
TPS76850QPWPR
ACTIVE
HTSSOP
PWP
20
2000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
PT76850
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of