TPS77033-Q1
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ULTRALOW-POWER 50-mA LOW-DROPOUT LINEAR REGULATORS
FEATURES
1
•
•
•
•
•
•
•
•
Qualified for Automotive Applications
50-mA Low-Dropout Regulator
Available in a 3.3-V Fixed-Output Voltage
Only 17-µA Quiescent Current at 50 mA
1-µA Quiescent Current in Standby Mode
Dropout Voltage Typically 35 mV at 50 mA
–40°C to 125°C Operating Junction
Temperature Range
5-Pin SOT-23 (DBV) Package
DBV PACKAGE
(TOP VIEW)
IN
1
GND
2
EN
3
5
OUT
4
NC/FB
DESCRIPTION
The TPS77033 low-dropout (LDO) voltage regulator offers the benefits of low dropout voltage, ultralow-power
operation, and miniaturized packaging. This regulator features low dropout voltages and ultralow quiescent
current compared to conventional LDO regulators. Offered in a 5-terminal small-outline integrated-circuit SOT-23
package, the TPS77033 series device is ideal for micropower operations and where board space is at a
premium.
A combination of new circuit design and process innovation has enabled the usual PNP pass transistor to be
replaced by a PMOS pass element. Because the PMOS pass element behaves as a low-value resistor, the
dropout voltage is low and is directly proportional to the load current. Since the PMOS pass element is a
voltage-driven device, the quiescent current is ultralow (28 µA maximum) and is stable over the entire range of
output load current (0 mA to 50 mA). Intended for use in portable systems such as laptops and cellular phones,
the ultralow-dropout voltage feature and ultralow-power operation result in a significant increase in system
battery operating life.
The TPS77033 also features a logic-enabled sleep mode to shut down the regulator, reducing quiescent current
to 1 µA typical at TJ = 25°C. The TPS77033 is offered in a 3.3-V fixed-voltage versions.
AVAILABLE OPTIONS (1)
(1)
(2)
(3)
TJ
VOLTAGE
PACKAGE (2)
PART NUMBER (3)
SYMBOL
–40°C to 125°C
3.3 V
SOT-23 – DBV
TPS77033QDBVRQ1
PCXI
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
DBVR indicates tape and reel of 3000 parts.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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TPS77033-Q1
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GROUND CURRENT
vs
FREE-AIR TEMPERATURE
22
21
VI = 4.3 V
CO = 4.7 µF
Ground Current − µ A
20
19
IO = 50 mA
IO = 0 mA
18
17
16
15
−60 −40 −20
0
20
40
60
80 100 120 140
TA − Free-Air Temperature − °C
FUNCTIONAL BLOCK DIAGRAM
OUT
IN
EN
VREF
Current Limit
/ Thermal
Protection
GND
2
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TERMINAL FUNCTIONS
TERMINAL
NAME
NO.
I/O
DESCRIPTION
GND
2
EN
3
I
Ground
Enable input
IN
1
I
Input supply voltage
NC
4
OUT
5
No connection (fixed options only)
O
Regulated output voltage
Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
UNIT
Input voltage range (2)
–0.3 V to 13.5 V
Voltage range at EN
–0.3 V to VI + 0.3 V
Voltage on OUT, FB
7V
Peak output current
Internally limited
ESD rating, HBM
2 kV
Continuous total power dissipation
See Dissipation Rating Table
TJ
Operating virtual junction temperature range
–40°C to 150°C
Tstg
Storage temperature range
–65°C to 150°C
Human-Body Model (HBM)
ESD classification per AEC Q100
(1)
(2)
4 kV (H2)
Machine Model (MM)
300 V (M3)
Charged-Device Model (CDM)
1500 V (C5)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
Dissipation Ratings
BOARD
PACKAGE
RθJC
RθJA
DERATING FACTOR
ABOVE TA = 25°C
TA ≤ 25°C
POWER RATING
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
Low K (1)
DBV
65.8°C/W
259°C/W
3.9 mW/°C
386 mW
212 mW
154 mW
(2)
DBV
65.8°C/W
180°C/W
5.6 mW/°C
555 mW
305 mW
222 mW
High K
(1)
(2)
The JEDEC Low K (1s) board design used to derive this data was a 3-in × 3-in, two-layer board with 2-oz copper traces on top of the
board.
The JEDEC High K (2s2p) board design used to derive this data was a 3-in × 3-in, multilayer board with 1-oz internal power and ground
planes and 2-oz copper traces on top and bottom of the board.
Recommended Operating Conditions
MIN
MAX
VI
Input voltage (1)
3.3 + VDO
10
VO
Output voltage
1.2
5.5
V
IO
Continuous output current (2)
0
50
mA
TJ
Operating junction temperature
–40
125
°C
(1)
(2)
UNIT
V
To calculate the minimum input voltage for your maximum output current, use the following formula:
VI(min) = VO(max) + VDO(max load)
Continuous output current and operating junction temperature are limited by internal protection circuitry, but it is not recommended that
the device operate under conditions beyond those specified in this table for extended periods of time.
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Electrical Characteristics
over recommended operating free-air temperature range, VI = VO(typ) + 1 V, IO = 50 mA, EN = 0 V, Co = 4.7 µF (unless
otherwise noted)
PARAMETER
Output voltage
(10 µA to 50 mA load) (1)
Quiescent current (GND current) (1)
Output voltage line regulation (ΔVO/VO) (1) (2)
TEST CONDITIONS
MIN
TJ = 25°C, 4.3 V < VIN < 10 V
TYP
TJ = –40°C to 125°C, 4.3 V < VIN < 10 V
3.201
EN = 0 V, 0 mA < IO < 50 mA, TJ = 25°C
3.399
17
EN = 0 V, IO = 50 mA, TJ = –40°C to 125°C
28
VO + 1 V < VI < 10 V, TJ = 25°C
0.04
VO + 1 V < VI < 10 V, TJ = –40°C to 125°C
0.1
Load regulation
EN = 0 V, IO = 0 to 50 mA, TJ = 25°C
Output noise voltage
BW = 300 Hz to 50 kHz, Co = 10 µF, TJ = 25°C
190
Output current limit
VO = 0 V (1)
350
Standby current
2.7 V< VI < 10 V
2.7 V < VI < 10 V
Power-supply ripple rejection
f = 1 kHz, CO = 10 µF, TJ = 25°C
Dropout voltage (3)
(1)
(2)
(3)
4
750
1.7
60
–1
EN = VI
–1
IO = 50 mA, TJ = 25°C
IO = 50 mA, TJ = –40°C to 125°C
µA
%/V
mA
µA
V
0.9
EN = 0 V
V
mV
2
(1)
UNIT
µVrms
1
TJ = –40°C to 125°C
Low-level enable input voltage
Input current (EN)
8
EN = VI, 2.7 < VI < 10 V
High-level enable input voltage
MAX
3.3
0
V
dB
1
1
48
100
µA
mV
Minimum IN operating voltage is 2.7 V or VO(typ) + 1 V, whichever is greater. Maximum IN voltage 10 V, minimum output current 10 µA,
maximum output current 50 mA.
If VO ≤ 1.8 V then VImin = 2.7 V, VImax = 10 V:
VO(VImax – 2.7 V)
´ 1000
Line Regulation (mV) = (%/V) ´
100
If VO ≥ 2.5 V, then VImin = VO + 1 V, VImax = 10 V:
VO(VImax – (VO + 1 V))
´ 1000
Line Regulation (mV) = (%/V) ´
100
IN voltage equals VO(typ) – 100 mV
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TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VO
Output voltage
vs Output current
1
vs Free-air temperature
2, 3
Output spectral noise density
vs Frequency
4
ZO
Output impedance
vs Frequency
5
VDO
Dropout voltage
vs Free-air temperature
6
Ripple rejection
vs Frequency
7
LDO startup time
8
Line transient response
9
Load transient response
Equivalent series resistance (ESR)
10
vs Output current
11, 13
vs Added ceramic capacitance
12, 14
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OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
3.284
3.285
VI = 4.3 V
CO = 4.7 µF
TA = 25° C
3.280
3.278
3.276
3.274
3.275
3.270
IO = 50 mA
3.265
3.260
3.272
3.255
−60 −40 −20
3.270
0
10
20
30
40
50
40
60
80 100 120 140
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
22
VI = 4.3 V
CO = 4.7 µF
20
19
IO = 50 mA
IO = 0 mA
18
17
Output Spectral Noise Density − µV Hz
2
16
1.8
15
−60 −40 −20
0
20
40
60
80 100 120 140
CO = 10 µF
IO = 1 mA
1.6
CO = 4.7 µF
IO = 50 mA
1.4
1.2
1
0.8
CO = 4.7 µF
IO = 1 mA
0.6
0.4
0.2
CO = 10 µF
IO = 50 mA
VI = 4.3 V
0
100
TA − Free-Air Temperature − °C
Figure 3.
6
20
Figure 2.
GROUND CURRENT
vs
FREE-AIR TEMPERATURE
Ground Current − µ A
0
TA − Free-Air Temperature − °C
IO − Output Current − mA
Figure 1.
21
IO = 1 mA
3.280
VO − Output Voltage − V
VO − Output Voltage − V
3.282
VI = 4.3 V
CO = 4.7 µF
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1k
10k
100k
f − Frequency − Hz
Figure 4.
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OUTPUT IMPEDANCE
vs
FREQUENCY
DROPOUT VOLTAGE
vs
FREE-AIR TEMPERATURE
100
2
1.8
VI = 4.3 V
CO = 4.7 µF
VI = 3.2 V
CO = 4.7 µF
VDO − Dropout Voltage − mV
Zo − Output Impedance − Ω
1.6
1.4
1.2
1
0.8
IO = 1 mA
0.6
0.4
10
IO = 10 mA
IO = 50 mA
0.2
0
10
IO = 50 mA
100
1k
10k
100k
1
−60 −40 −20
1M
f − Frequency − Hz
0
20
40
60
80 100 120 140
TA − Free-Air Temperature − °C
Figure 6.
Figure 5.
RIPPLE REJECTION
vs
FREQUENCY
LDO STARTUP TIME
100
90
Ripple Rejection − dB
80
EN
70
IO = 1 mA
60
50
40
30
IO = 50 mA
20
10
0
−10
10
VI = 4.3 V
CO = 4.7 µF
ESR = 0.3 Ω
100
VO
1k
10k
100k
1M
10M
0
20
f − Frequency − Hz
Figure 7.
40
60
80 100 120 140 160 180 200
t − Time − µs
Figure 8.
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Current Load − mA
LOAD TRANSIENT RESPONSE
10
0
−10
∆ VO − Change In
Output Voltage − mV
VI – Input Voltage – V
VO – Output Voltage – mV
LINE TRANSIENT RESPONSE
5.3
4.3
IL = 10 mA
CO = 4.7 µF
ESR = 0.3 Ω
0
20
40
60
50
0
0
−20
0
80 100 120 140 160 180
t − Time − µs
Figure 9.
TYPICAL REGIONS OF STABILITY
EQUIVALENT SERIES RESISTANCE (ESR)
vs
OUTPUT CURRENT
20
60
80 100 120 140 160 180
t − Time − µs
Figure 10.
100
ESR − Equivalent Series Resistance − Ω
VIN = 4.3 V
CO = 4.7 µF
ESR = 0.3 Ω
3.3 V LDO
Region of Instability
10
1
Region of Stability
0.1
0
5
10
15
20
25
30
35
40
45
50
VIN = 4.3 V
CO = 4.7 µF
IL = 50 mA
Region of Instability
10
Region of Stability
1
0
0.1
IO − Output Current − mA
Figure 11.
8
40
TYPICAL REGIONS OF STABILITY
EQUIVALENT SERIES RESISTANCE (ESR)
vs
ADDED CERAMIC CAPACITANCE
100
ESR − Equivalent Series Resistance − Ω
VI = 4.3 V
CO = 4.7 µF
ESR = 0.3 Ω
−40
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0.2 0.3 0.4 0.5
0.6 0.7 0.8
0.9
1
Added Ceramic Capacitance − µF
Figure 12.
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TYPICAL REGIONS OF STABILITY
EQUIVALENT SERIES RESISTANCE (ESR)
vs
OUTPUT CURRENT
TYPICAL REGIONS OF STABILITY
EQUIVALENT SERIES RESISTANCE (ESR)
vs
ADDED CERAMIC CAPACITANCE
100
VIN = 4.3 V
CO = 10 µF
ESR = 0.3 Ω
3.3 V LDO
Region of Instability
ESR − Equivalent Series Resistance − Ω
ESR − Equivalent Series Resistance − Ω
100
10
Region of Stability
1
0
5
10
15
20
25
30
35
40
45
50
VIN = 4.3 V
CO = 10 µF
IL = 50 mA
Region of Instability
10
Region of Stability
1
0
0.1
IO − Output Current − mA
Figure 13.
0.2 0.3 0.4 0.5
0.6 0.7 0.8
0.9
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Added Ceramic Capacitance − µF
Figure 14.
9
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APPLICATION INFORMATION
The TPS77033 low-dropout (LDO) regulator has been optimized for use in battery-operated equipment. They
feature extremely low-dropout voltages, low quiescent current (17 µA nominally), and enable inputs to reduce
supply currents to less than 1 µA when the regulators are turned off.
Device Operation
The TPS77033 uses a PMOS pass element to dramatically reduce both dropout voltage and supply current over
more conventional PNP-pass-element LDO designs. The PMOS pass element is a voltage-controlled device and,
unlike a PNP transistor, does not require increased drive current as output current increases. Supply current in
the TPS77033 essentially is constant from no load to maximum load.
Current limiting and thermal protection prevent damage by excessive output current and/or power dissipation.
The device switches into a constant-current mode at approximately 350 mA; further load reduces the output
voltage instead of increasing the output current. The thermal protection shuts the regulator off if the junction
temperature rises above approximately 165°C. Recovery is automatic when the junction temperature drops
approximately 25°C below the high-temperature trip point. The PMOS pass element includes a back-gate diode
that conducts reverse current when the input voltage level drops below the output voltage level.
A voltage of 1.7 V or greater on the EN input disables the TPS77033 internal circuitry, reducing the supply
current to 1 µA. A voltage of less than 0.9 V on the EN input enables the TPS77033 and enables normal
operation to resume. The EN input does not include any deliberate hysteresis, and it exhibits an actual switching
threshold of approximately 1.5 V.
A typical application circuit is shown in Figure 15.
1
VI
C1
1 µF
IN
NC/FB
OUT
4
5
VO
3
EN
+
4.7 µF
GND
2
ESR = 0.2 Ω
Figure 15. Typical Application Circuit – Fixed-Voltage Option
10
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External Capacitor Requirements
Although not required, a 0.047-µF or larger ceramic input bypass capacitor, connected between IN and GND and
located close to the TPS77033, is recommended to improve transient response and noise rejection. A
higher-value electrolytic input capacitor may be necessary if large, fast-rise-time load transients are anticipated,
and the device is located several inches from the power source.
Like all low-dropout regulators, the TPS77033 requires an output capacitor connected between OUT and GND to
stabilize the internal control loop. The minimum recommended capacitance is 4.7 µF. The ESR (equivalent series
resistance) of the capacitor should be between 0.2 Ω and 10 Ω to ensure stability. Capacitor values larger than
4.7 µF are acceptable and allow the use of smaller ESR values. Capacitances less than 4.7 µF are not
recommended because they require careful selection of ESR to ensure stability. Solid tantalum electrolytic,
aluminum electrolytic, and multilayer ceramic capacitors are all suitable, provided they meet the requirements
previously described. Most of the commercially available 4.7-µF surface-mount solid tantalum capacitors,
including devices from Sprague, Kemet, and Nichico, meet the ESR requirements stated above. Multilayer
ceramic capacitors may have very small equivalent series resistances and may thus require the addition of a
low-value series resistor to ensure stability.
CAPACITOR SELECTION
PART NO.
(1)
MFR.
VALUE
MAX ESR (1)
SIZE (H × L × W) (1)
T494B475K016AS
KEMET
4.7 µF
1.5 Ω
1.9 × 3.5 × 2.8
195D106x0016x2T
SPRAGUE
10 µF
1.5 Ω
1.3 × 7.0 × 2.7
695D106x003562T
SPRAGUE
10 µF
1.3 Ω
2.5 × 7.6 × 2.5
TPSC475K035R0600
AVX
4.7 µF
0.6 Ω
2.6 × 6.0 × 3.2
Size is in mm. ESR is maximum resistance in ohms at 100 kHz and TA = 25°C. Contact the
manufacturer for minimum ESR values.
Power Dissipation and Junction Temperature
Specified regulator operation is assured to a junction temperature of 125°C; the maximum junction temperature
should be restricted to 125°C under normal operating conditions. This restriction limits the power dissipation the
regulator can handle in any given application. To ensure the junction temperature is within acceptable limits,
calculate the maximum allowable dissipation, PD(max), and the actual dissipation, PD, which must be less than or
equal to PD(max).
The maximum power dissipation limit is determined using Equation 1:
PD(max) =
TJmax – TA
RqJA
(1)
where
TJmax = maximum allowable junction temperature
RθJA = junction-to-ambient thermal resistance for the package (see Dissipation Rating)
TA = ambient temperature
The regulator dissipation is calculated using Equation 2:
PD = (VI – VO) ´ IO
(2)
Power dissipation resulting from quiescent current is negligible. Excessive power dissipation triggers the thermal
protection circuit.
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Regulator Protection
The TPS77033 PMOS-pass transistor has a built-in back diode that conducts reverse current when the input
voltage drops below the output voltage (e.g., during power down). Current is conducted from the output to the
input and is not internally limited. If extended reverse voltage operation is anticipated, external limiting might be
appropriate.
The TPS77033 features internal current limiting and thermal protection. During normal operation, the TPS77033
limits output current to approximately 350 mA. When current limiting engages, the output voltage scales back
linearly until the overcurrent condition ends. While current limiting is designed to prevent gross device failure,
care should be taken not to exceed the power dissipation ratings of the package. If the temperature of the device
exceeds approximately 165°C, thermal-protection circuitry shuts it down. Once the device has cooled down to
below approximately 140°C, regulator operation resumes.
12
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
TPS77033QDBVRQ1
OBSOLETE
Package Type Package Pins Package
Drawing
Qty
SOT-23
DBV
5
Eco Plan
Lead/Ball Finish
(2)
TBD
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
Call TI
Call TI
(4)
-40 to 125
PCXI
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TPS77033-Q1 :
• Catalog: TPS77033
NOTE: Qualified Version Definitions:
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
• Catalog - TI's standard catalog product
Addendum-Page 2
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DLP® Products
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RFID
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www.ti.com/omap
TI E2E Community
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