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TPS78228DDCTG4

TPS78228DDCTG4

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    TSOT23-5

  • 描述:

    IC REG LDO 2.8V 0.15A 5SOT

  • 详情介绍
  • 数据手册
  • 价格&库存
TPS78228DDCTG4 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents Reference Design TPS782 SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 TPS782 500-nA IQ,150-mA, Ultra-Low Quiescent Current Low-Dropout Linear Regulator 1 Features 3 Description • • • • • • • • • • The TPS782 family of low-dropout regulators (LDOs) offers the benefits of ultra-low power and miniaturized packaging. 1 Low IQ: 500 nA 150-mA, Low-Dropout Regulator Input Voltage Range: 2.2 V to 5.5 V Low-Dropout at 25°C, 130 mV at 150 mA Low-Dropout at 85°C, 175 mV at 150 mA 3% Accuracy Over Load, Line, and Temperature Stable with a 1.0-μF Ceramic Capacitor Thermal Shutdown and Overcurrent Protection CMOS Logic Level-Compatible Enable Pin Available in DDC (TSOT23-5) or DRV (2-mm x 2mm SON-6) Packages This LDO is designed specifically for battery-powered applications where ultra-low quiescent current is a critical parameter. The TPS782, with ultra-low IQ (500 nA), is ideal for microprocessors, microcontrollers, and other battery-powered applications. The ultra-low power and miniaturized packaging allow designers to customize power consumption for specific applications. The TPS782 family is designed to be compatible with the TI MSP430 and other similar products. The enable pin (EN) is compatible with standard CMOS logic. This device allows for minimal board space because of miniaturized packaging and a potentially small output capacitor. The TPS782 series also features thermal shutdown and current limit to protect the device during fault conditions. All packages have an operating temperature range of TJ = –40°C to 125°C. 2 Applications • • • • TI MSP430 Attach Applications Wireless Handsets and Smart Phones MP3 Players Battery-Operated Handheld Products For high-performance applications that require a duallevel voltage option, consider the TPS780 series, with an IQ of 500 nA and dynamic voltage scaling. Device Information(1) PART NUMBER TPS782 PACKAGE BODY SIZE (NOM) SOT (5) 2.90 mm x 1.60 mm SON (6) 2.00 mm x 2.00 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Simplified Schematic VIN IN VOUT OUT 1mF 1mF TPS782xx On Off EN GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPS782 SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 5 6 Absolute Maximum Ratings ...................................... ESD Ratings ............................................................ Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description ............................................ 10 7.1 7.2 7.3 7.4 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 10 10 10 11 8 Application and Implementation ........................ 12 8.1 Application Information............................................ 12 8.2 Typical Application .................................................. 12 8.3 Do's and Don’ts....................................................... 13 9 Power Supply Recommendations...................... 13 10 Layout................................................................... 14 10.1 10.2 10.3 10.4 Layout Guidelines ................................................. Layout Example .................................................... Thermal Protection................................................ Power Dissipation ................................................. 14 14 14 14 11 Device and Documentation Support ................. 15 11.1 11.2 11.3 11.4 11.5 Device Support...................................................... Documentation Support ....................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 15 15 15 15 15 12 Mechanical, Packaging, and Orderable Information ........................................................... 15 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (January 2014) to Revision D Page • Added ESD Ratings table, Thermal Information table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ..................................... 1 • Changed document format to latest data sheet standards; moved existing sections ............................................................ 1 • Changed factory programming feature bullet ........................................................................................................................ 1 • Added input voltage range feature bullet ............................................................................................................................... 1 • Changed Applications list ...................................................................................................................................................... 1 • Changed Description section text (all paragraphs) ................................................................................................................ 1 • Added simplified schematic to front page .............................................................................................................................. 1 • Deleted footnotes from pin configuration drawings ............................................................................................................... 3 • Changed pin descriptions throughout Pin Functions table .................................................................................................... 3 • Changed operating junction temperature range maximum value in Absolute Maximum Ratings table................................. 4 • Deleted Dissipation Ratings table; see Thermal Information table......................................................................................... 4 • Changed symbol and parameter names for clarity in Electrical Characteristics table .......................................................... 5 Changes from Revision B (May 2010) to Revision C • Page Changed IQ value in Description section from 1 µA to 500 nA .............................................................................................. 1 Changes from Revision A (September 2008) to Revision B Page • Changed first bullet of Features list........................................................................................................................................ 1 • Updated title of data sheet...................................................................................................................................................... 1 • Changed ground pin current, IOUT = 0mA typical specification from 1.0 μA to 0.42 μA ......................................................... 5 • Added Figure 6 ...................................................................................................................................................................... 6 2 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 TPS782 www.ti.com SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 5 Pin Configuration and Functions DDC PACKAGE TSOT23-5 (TOP VIEW) IN 1 GND 2 EN 3 5 OUT 4 GND DRV PACKAGE 2-mm x 2-mm SON-6 (TOP VIEW) OUT 1 N/C 2 GND 3 Thermal Pad 6 IN 5 GND 4 EN Pin Functions PIN I/O DESCRIPTION 5 O Regulated output voltage pin. A small (1-μF) ceramic capacitor is needed from this pin to ground to assure stability. See the Input and Output Capacitor Requirements in the Application and Implementation section for more details. 2 — — No internal connection. EN 4 3 I GND 3, 5 2, 4 — IN 6 1 I Thermal pad Thermal pad — — NAME DRV DDC OUT 1 NC Enable pin. Drive this pin over 1.2 V to turn on the regulator. Drive this pin below 0.4 V to put the regulator into shutdown mode, reducing operating current to 18 nA typical. Ground pin. Tie all ground pins to ground for proper operation. Input pin. For stable operation, place a small, 0.1-µF capacitor from this pin to ground; typical input capacitor = 1.0 µF. Tie back both input and output capacitor grounds to the IC ground, with no significant impedance between them. Connect the thermal pad to ground. Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 3 TPS782 SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) Voltage Current (1) MIN MAX UNIT Input voltage range –0.3 6 V Enable –0.3 VIN + 0.3 V Output voltage range –0.3 VIN + 0.3 V Maximum output current Internally limited Output short-circuit duration A Indefinite Total continuous power dissipation, PDISS See Thermal Information Operating junction temperature, TJ –40 160 °C Storage temperature, Tstg –55 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins V(ESD) (1) (2) Electrostatic discharge (1) Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) UNIT ±2000 ±500 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN VIN Input voltage 2.2 VOUT Output voltage VEN Enable voltage IOUT Output current TJ Junction temperature NOM MAX UNIT 5.5 V 1.8 4.2 V 0 VIN V 0 150 mA –40 125 °C 6.4 Thermal Information TPS782 THERMAL METRIC (1) DRV DDC 6 PINS 5 PINS RθJA Junction-to-ambient thermal resistance 65.9 193.0 RθJC(top) Junction-to-case (top) thermal resistance 87.3 40.1 RθJB Junction-to-board thermal resistance 35.4 34.3 ψJT Junction-to-top characterization parameter 1.7 0.9 ψJB Junction-to-board characterization parameter 35.8 34.1 RθJC(bot) Junction-to-case (bottom) thermal resistance 6.1 — (1) 4 UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 TPS782 www.ti.com SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 6.5 Electrical Characteristics Over operating temperature range (TJ = –40°C to 125°C), VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1.0 μF, fixed VOUT test conditions, unless otherwise noted. Typical values at TJ = 25°C. PARAMETER TEST CONDITIONS MIN TYP VIN Input voltage range 2.2 VOUT DC output accuracy ΔVOUT(ΔVIN) Line regulation VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 5 mA ±1% ΔVOUT(ΔIOUT) Load regulation 0 mA ≤ IOUT ≤ 150 mA ±2% VDO Dropout voltage (1) VIN = 95% VOUT(nom), IOUT = 150 mA ILIM Output current limit VOUT = 0.90 × VOUT(nom) Nominal TJ = 25°C Over VIN, IOUT, VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V, temperature 0 mA ≤ IOUT ≤ 150 mA MAX –2% ±1% +2% –3% ±2% 3% 150 IOUT = 0 mA UNIT 5.5 V 130 250 mV 230 400 mA 0.42 1.3 μA IGND Ground pin current IEN EN pin current VEN = 5.5V ISHDN Shutdown current (IGND) VEN ≤ 0.4 V, 2.2 V ≤ VIN < 5.5 V, TJ = –40°C to 100°C 18 f = 10 Hz 40 dB Power-supply rejection ratio VIN = 4.3 V, VOUT = 3.3 V, IOUT = 150 mA f = 100 Hz 20 dB f = 1 kHz 15 dB 108 μVRMS 500 μs 500 (4) μs 160 °C PSRR IOUT = 150 mA Vn Output noise voltage BW = 100 Hz to 100 kHz, VIN = 3.2 V, VOUT = 2.7 V, IOUT = 1 mA tSTR Startup time (2) COUT = 1.0 μF, VOUT = 10% VOUT(nom) to VOUT = 90% VOUT(nom) (3) tSHDN Shutdown time Tsd Thermal shutdown temperature TJ Operating junction temperature (1) (2) (3) (4) μA 8 IOUT = 150 mA, COUT = 1.0 μF, VOUT = 2.8 V, VOUT = 90% VOUT(nom) to VOUT = 10% VOUT(nom) Shutdown, temperature increasing Reset, temperature decreasing 40 nA 130 nA 140 –40 °C 125 °C VDO is not measured for devices with VOUT(nom) ≤ 2.3 V because minimum VIN = 2.2 V. Time from VEN = 1.2 V to VOUT = 90% (VOUT(nom)). Time from VEN = 0.4 V to VOUT = 10% (VOUT(nom)). See Shutdown in the Feature Description section for more details. Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 5 TPS782 SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 www.ti.com 6.6 Typical Characteristics Over the operating temperature range of TJ = –40°C to 125°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1 μF, and CIN = 1 μF, unless otherwise noted. 3 1.0 0.8 TJ = -40°C 0.6 0.4 1 0.2 VOUT (%) VOUT (%) 2 TJ = +25°C 0 -0.2 TJ = +85°C -0.4 TJ = -40°C 0 -1 -0.6 -2 TJ = +85°C -0.8 -3 -1.0 3.8 4.0 4.2 4.4 4.6 4.8 VIN (V) 5.0 5.2 5.4 3.8 5.6 Figure 1. Line Regulation, IOUT = 5 mA, TPS78227 4.0 4.2 4.4 4.6 4.8 VIN (V) 5.0 5.2 5.4 5.6 Figure 2. Line Regulation, IOUT = 150 mA, TPS78227 3 250 TJ = +125°C VDO (VIN - VOUT) (mV) 2 TJ = -40°C 1 VOUT (%) TJ = +25°C 0 -1 TJ = +25°C TJ = +85°C 200 TJ = +85°C 150 100 50 -2 TJ = -40°C TJ = +25°C 0 -3 0 25 50 75 IOUT (mA) 100 125 150 Figure 3. Load Regulation, VIN = 3.8 V, TPS78227 0 25 50 75 IOUT (mA) 100 125 150 Figure 4. Dropout Voltage vs Output Current, VIN = 0.95 × VOUT(nom), TPS78227 250 900 TJ = +85°C 600 150 100mA 100 TJ = +25°C 500 400 300 50mA TJ = -40°C 200 50 100 10mA 0 0 -40 -25 -10 5 20 35 50 TJ (°C) 65 80 95 110 125 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 VIN (V) Figure 5. Dropout Voltage vs Junction Temperature, VIN = 0.95 × VOUT(nom), TPS78227 6 TJ = +125°C 700 150mA IGND (nA) VDO (VIN - VOUT) (mV) 800 200 Figure 6. Ground Pin Current vs Input Voltage, IOUT = 0 mA, TPS78233 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 TPS782 www.ti.com SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 Typical Characteristics (continued) Over the operating temperature range of TJ = –40°C to 125°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1 μF, and CIN = 1 μF, unless otherwise noted. 3 6 5 2 TJ = +125°C TJ = +85°C 1 VOUT (%) IGND (mA) 4 3 2 0 -1 TJ = +25°C TJ = -40°C 1 -2 0 TJ = +85°C TJ = +25°C -3 3.8 4.0 4.2 4.4 4.6 4.8 VIN (V) 5.0 5.2 5.4 3.8 5.6 Figure 7. Ground Pin Current vs Input Voltage, IOUT = 50 mA, TPS78227 4.0 4.2 4.4 4.6 4.8 VIN (V) 5.0 5.2 5.4 5.6 Figure 8. Ground Pin Current vs Input Voltage, IOUT = 150 mA, TPS78227 300 2.0 290 1.8 280 1.6 270 1.4 TJ = -40°C 260 250 IEN (nA) Current Limit (mA) TJ = -40°C TJ = +25°C 240 TJ = +85°C 230 220 TJ = +25°C 1.0 TJ = +85°C 0.8 0.6 0.4 TJ = +125°C 210 TJ = -40°C 1.2 0.2 200 0 3.8 4.0 4.2 4.4 4.6 4.8 VIN (V) 5.0 5.2 5.4 5.6 Figure 9. Current Limit vs Input Voltage, VOUT = 95% VOUT(nom), TPS78227 3.8 4.0 4.2 4.4 4.6 4.8 VIN (V) 5.0 5.2 5.4 5.6 Figure 10. Enable Pin Current vs Input Voltage, IOUT = 100 μA, TPS78227 1.2 1 1.1 0.1mA 0.9 VEN On %DVOUT (V) VEN (V) 1.0 0.8 0.7 0 5mA -1 VEN Off 150mA 0.6 0.5 0.4 -2 -40 -25 -10 5 20 35 50 TJ (°C) 65 80 95 110 125 Figure 11. Enable Pin Hysteresis vs Junction Temperature, IOUT = 1 mA, TPS78227 -40 -25 -10 5 20 35 50 TJ (°C) 65 80 95 110 125 Figure 12. %ΔVOUT vs Junction Temperature, VIN = 3.3 V, TPS78227 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 7 TPS782 SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 www.ti.com Typical Characteristics (continued) Over the operating temperature range of TJ = –40°C to 125°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1 μF, and CIN = 1 μF, unless otherwise noted. Output Spectral Noise Density (mV/ÖHz) 3 2 %DVOUT (V) 1 0.1mA 0 5mA -1 150mA -2 -3 -40 -25 -10 5 20 35 50 TJ (°C) 65 80 95 100 10 1 0.1 50mA 109mVRMS 0.01 1mA 108mVRMS 0.001 110 125 Figure 13. %ΔVOUT vs Junction Temperature, VIN = 3.7 V, TPS78227 150mA 109mVRMS 10 100 VIN PSRR (dB) 50 40 50mA Enable VOUT VIN = 0.0V to 5.0V VOUT = 3.3V IOUT = 150mA COUT = 10mF Load Current 30 0V 20 100k Current (50mA/div) Voltage (1V/div) 1mA 60 10k Figure 14. Output Spectral Noise Density vs Frequency, CIN = 1 μF, COUT = 2.2 μF, VIN = 3.2 V, TPS78227 80 70 1k Frequency (Hz) 150mA 10 0 10 100 1k 10k 100k Frequency (Hz) 1M Time (20ms/div) 10M Figure 16. Input Voltage Ramp vs Output Voltage, TPS78233 Figure 15. Ripple Rejection vs Frequency, VIN = 4.2 V, VOUT = 2.7 V, COUT = 2.2 μF, TPS78227 Load Current VIN = 5.5V VOUT = 3.3V IOUT = 150mA COUT = 10mF 0V 0A 0V Time (20ms/div) VIN = 0.0V to 5.5V VOUT = 2.2V IOUT = 100mA COUT = 10mF VOUT Time (1ms/div) Figure 17. Output Voltage vs Enable (Slow Ramp), TPS78233 8 VIN Load Current Current (50mA/div) VOUT Voltage (1V/div) Enable Current (50mA/div) Voltage (1V/div) VIN Figure 18. Input Voltage vs Delay to Output, TPS78222 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 TPS782 www.ti.com SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 Typical Characteristics (continued) Enable Enable Voltage (1V/div) VIN VOUT Load Current Current (10mA/div) VIN = 5.5V VOUT = 3.3V IOUT = 0mA to 10mA COUT = 10mF VOUT VIN Load Current VIN = 5.50V VOUT = 3.3V IOUT = 150mA COUT = 10mF 0V 0A Time (5ms/div) Current (50mA/div) Voltage (100mV/div) Over the operating temperature range of TJ = –40°C to 125°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1 μF, and CIN = 1 μF, unless otherwise noted. Time (1ms/div) VIN Figure 20. Enable Pin vs Output Voltage Response and Output Current, TPS78233 Enable VOUT VIN = 5.5V VOUT = 3.3V IOUT = 150mA COUT = 10mF Load Current 0V Current (50mA/div) Voltage (1V/div) Figure 19. Load Transient Response, TPS78233 Time (1ms/div) Figure 21. Enable Pin vs Output Voltage Delay, TPS78233 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 9 TPS782 SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 www.ti.com 7 Detailed Description 7.1 Overview The TPS782 family of low-dropout regulators (LDOs) is designed specifically for battery-powered applications where ultralow quiescent current is a critical parameter. The TPS782 family is compatible with the TI MSP430 and other similar products. The enable pin (EN) is compatible with standard CMOS logic. This LDO family is stable with any output capacitor greater than 1.0 µF. 7.2 Functional Block Diagram IN OUT Current Limit EPROM EN Mux Thermal Shutdown Bandgap Active PullDown 10kW Logic GND 7.3 Feature Description 7.3.1 Internal Current Limit The TPS782 is internally current-limited to protect the regulator during fault conditions. During current limit, the output sources a fixed amount of current that is largely independent of output voltage. For reliable operation, the device should not be operated in a current limit state for extended periods of time. The PMOS pass element in the TPS782 series has a built-in body diode that conducts current when the voltage at OUT exceeds the voltage at IN. This current is not limited, so if extended reverse voltage operation is anticipated, external limiting to 5% of rated output current may be appropriate. 7.3.2 Active VOUT Pulldown In the TPS782 series, the active pulldown discharges VOUT when the device is off. However, the input voltage must be greater than 2.2 V for the active pulldown to work. 10 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 TPS782 www.ti.com SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 Feature Description (continued) 7.3.3 Shutdown The enable pin (EN) is active high and is compatible with standard and low-voltage CMOS levels. When shutdown capability is not required, EN should be connected to the IN pin, as shown in Figure 22. The TPS782 series, with internal active output pulldown circuitry, discharges the output to within 5% VOUT with a time (t) shown in Equation 1: t=3 10kW ´ RL ´ COUT 10kW + RL (1) Where: RL= output load resistance COUT = output capacitance 4.2V to 5.5V VIN 2.7V IN VOUT OUT 1 mF 1mF TPS78227 EN GND Figure 22. Circuit Showing EN Tied High When Shutdown Capability Is Not Required 7.4 Device Functional Modes Table 1 provides a quick comparison between the normal, dropout, and disabled modes of operation. Table 1. Device Functional Mode Comparison PARAMETER OPERATING MODE VIN EN IOUT TJ Normal VIN > VOUT(nom) + VDO VEN > VEN(HI) IOUT < ILIM TJ < TSD Dropout VIN < VOUT(nom) + VDO VEN > VEN(HI) IOUT < ILIM TJ < TSD Disabled — VEN < VEN(LO) — TJ > TSD 7.4.1 Normal Operation The device regulates to the nominal output voltage under the following conditions: • The input voltage is greater than the nominal output voltage plus the dropout voltage (VOUT(nom) + VDO). • The enable voltage has previously exceeded the enable rising threshold voltage and not yet decreased below the enable falling threshold. • The output current is less than the current limit (IOUT < ILIM). • The device junction temperature is less than the thermal shutdown temperature (TJ < TSD). 7.4.2 Dropout Operation If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other conditions are met for normal operation, the device operates in dropout mode. In this mode, the output voltage tracks the input voltage. During this mode, the transient performance of the device becomes significantly degraded because the pass device is in a triode state and no longer controls the current through the LDO. Line or load transients in dropout can result in large output-voltage deviations. Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 11 TPS782 SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 www.ti.com 7.4.3 Disabled The device is disabled under the following conditions: • The enable voltage is less than the enable falling threshold voltage or has not yet exceeded the enable rising threshold. • The device junction temperature is greater than the thermal shutdown temperature (TJ > TSD). 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The TPS782 family of LDOs is factory-programmable to have a fixed output. Note that during startup or steadystate conditions, it is important that the EN pin voltage never exceed VIN + 0.3V. 8.2 Typical Application VIN IN VOUT OUT 1mF 1mF TPS782xx On Off EN GND Figure 23. Typical Application Circuit 8.2.1 Design Requirements Select the desired device based on the output voltage. Provide an input supply with adequate headroom to account for dropout and output current to account for the GND pin current, and power the load. Select input and output capacitors based on application needs. 8.2.2 Detailed Design Procedure 8.2.2.1 Input and Output Capacitor Requirements Although an input capacitor is not required for stability, it is good analog design practice to connect a 0.1-μF to 1.0-μF low equivalent series resistance (ESR) capacitor across the input supply near the regulator. This capacitor counteracts reactive input sources and improves transient response, noise rejection, and ripple rejection. A higher-value capacitor may be necessary if large, fast rise-time load transients are anticipated, or if the device is not located near the power source. If source impedance is not sufficiently low, a 0.1-μF input capacitor may be necessary to ensure stability. The TPS782 series is designed to be stable with standard ceramic capacitors with values of 1.0 μF or larger at the output. X5R- and X7R-type capacitors are best because they have minimal variation in value and ESR over temperature. Maximum ESR should be less than 1.0 Ω. With tolerance and dc bias effects, the minimum capacitance to ensure stability is 1 μF. 12 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 TPS782 www.ti.com SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 Typical Application (continued) 8.2.2.2 Dropout Voltage The TPS782 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the PMOS pass device is the linear region of operation and the input-to-output resistance is the RDS(ON) of the PMOS pass element. VDO approximately scales with output current because the PMOS device behaves like a resistor in dropout. As with any linear regulator, PSRR and transient response are degraded as (VIN – VOUT) approaches dropout. This effect is shown in the Typical Characteristics section. Refer to application report SLVA207, Understanding LDO Dropout, available for download from www.ti.com. 8.2.2.3 Transient Response As with any regulator, increasing the size of the output capacitor reduces over/undershoot magnitude but increases duration of the transient response. For more information, see Figure 19. 8.2.2.4 Minimum Load The TPS782 series is stable with no output load. Traditional PMOS LDO regulators suffer from lower loop gain at very light output loads. The TPS782 employs an innovative, low-current circuit under very light or no-load conditions, resulting in improved output voltage regulation performance down to zero output current. See Figure 19 for the load transient response. 100 80 1mA 70 10 60 150mA 109mVRMS 1 PSRR (dB) Output Spectral Noise Density (mV/ÖHz) 8.2.3 Application Curves 0.1 50mA 109mVRMS 0.01 10 100 1k Frequency (Hz) 40 50mA 30 20 150mA 10 1mA 108mVRMS 0.001 50 0 10k 100k Figure 24. Output Spectral Noise Density vs Frequency, CIN = 1 μF, COUT = 2.2 μF, VIN = 3.2 V, TPS78227 10 100 1k 10k 100k Frequency (Hz) 1M 10M Figure 25. Ripple Rejection vs Frequency, VIN = 4.2 V, VOUT = 2.7 V, COUT = 2.2 μF, TPS78227 8.3 Do's and Don’ts Do place at least one 1-µF ceramic capacitor as close as possible to the OUT pin of the regulator. Do not place the output capacitor more than 10 mm away from the regulator. Do connect a 0.1-μF to 1.0-μF low equivalent series resistance (ESR) capacitor across the IN pin and GND of the regulator. Do not exceed the absolute maximum ratings. 9 Power Supply Recommendations For best performance, connect a low-output impedance power supply directly to the IN pin of the TPS782 series. Inductive impedances between the input supply and the IN pin create significant voltage excursions at the IN pin during startup or load transient events. If inductive impedances are unavoidable, use an input capacitor. Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 13 TPS782 SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 www.ti.com 10 Layout 10.1 Layout Guidelines To improve ac performance (such as PSRR, output noise, and transient response), it is recommended that the printed circuit board (PCB) be designed with separate ground planes for VIN and VOUT, with each ground plane connected only at the GND pin of the device. In addition, the ground connection for the output capacitor should connect directly to the GND pin of the device. High ESR capacitors may degrade PSRR. 10.2 Layout Example VIN VOUT 1 CIN 5 COUT 2 3 4 GND PLANE Represents via used for application-specific connections Figure 26. Layout Example for DDC Package 10.3 Thermal Protection Thermal protection disables the device output when the junction temperature rises to approximately 160°C, allowing the device to cool. Once the junction temperature cools to approximately 140°C, the output circuitry is enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off again. This cycling limits the dissipation of the regulator, protecting it from damage as a result of overheating. Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate heatsink. For reliable operation, junction temperature should be limited to 125°C maximum. To estimate the margin of safety in a complete design (including heatsink), increase the ambient temperature until the thermal protection is triggered; use worst-case loads and signal conditions. For good reliability, thermal protection should trigger at least 35°C above the maximum expected ambient condition of your particular application. This configuration produces a worst-case junction temperature of 125°C at the highest expected ambient temperature and worst-case load. The internal protection circuitry of the TPS782 series has been designed to protect against overload conditions. However, it is not intended to replace proper heatsinking. Continuously running the TPS782 series into thermal shutdown degrades device reliability. 10.4 Power Dissipation The ability to remove heat from the die is different for each package type, presenting different considerations in the PCB layout. The PCB area around the device that is free of other components moves the heat from the device to the ambient air. Performance data for JEDEC low- and high-K boards are given in the Thermal Information table. Using heavier copper increases the effectiveness in removing heat from the device. The addition of plated through-holes to heat-dissipating layers also improves the heatsink effectiveness. Power dissipation depends on input voltage and load conditions. Power dissipation (PD) is equal to the product of the output current times the voltage drop across the output pass element (VIN to VOUT), as shown in Equation 2: PD = (VIN - VOUT) ´ IOUT (2) 14 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 TPS782 www.ti.com SBVS115D – AUGUST 2008 – REVISED JANUARY 2015 11 Device and Documentation Support 11.1 Device Support 11.1.1 Development Support 11.1.1.1 Evaluation Modules An evaluation module (EVM) is available to assist in the initial circuit performance evaluation using the TPS782. The TPS782xxEVM evaluation modules (and related user guide) can be requested at the Texas Instruments website through the product folders or purchased directly from the TI eStore. 11.1.1.2 Spice Models Computer simulation of circuit performance using SPICE is often useful when analyzing the performance of analog circuits and systems. A SPICE model for the TPS782 family is available through the product folders under Simulation Models. 11.1.2 Device Nomenclature Table 2. Device Nomenclature (1) PRODUCT TPS782xxyyyz (1) VOUT XX is the nominal output voltage YYY is the package designator. Z is the tape and reel quantity (R = 3000, T = 250). For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. 11.2 Documentation Support 11.2.1 Related Documentation For related documentation see the following: • Application report. Understanding LDO Dropout, SLVA207 • Product information. Low-power MCUs, MSP430 • Reference design.Water Meter Implementation with FRAM Microcontroller, TIDU517 11.3 Trademarks All trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS782 15 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS78218DDCR ACTIVE SOT-23-THIN DDC 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 SJY TPS78218DDCT ACTIVE SOT-23-THIN DDC 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 SJY TPS78218DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 SAF TPS78218DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 SAF TPS78222DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 RAR TPS78222DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 RAR TPS78223DDCR ACTIVE SOT-23-THIN DDC 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 NXM TPS78223DDCT ACTIVE SOT-23-THIN DDC 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 NXM TPS78225DDCR ACTIVE SOT-23-THIN DDC 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 CVD TPS78225DDCT ACTIVE SOT-23-THIN DDC 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 CVD TPS78225DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 CVD TPS78225DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 CVD TPS78227DDCR ACTIVE SOT-23-THIN DDC 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 CVE TPS78227DDCT ACTIVE SOT-23-THIN DDC 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 CVE TPS78227DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 CVE TPS78227DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 CVE TPS78228DDCR ACTIVE SOT-23-THIN DDC 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 CVF TPS78228DDCT ACTIVE SOT-23-THIN DDC 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 CVF TPS78228DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAUAG Level-1-260C-UNLIM -40 to 125 CVF TPS78228DRVRG4 ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAUAG Level-1-260C-UNLIM -40 to 125 CVF Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 10-Dec-2020 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS78228DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAUAG Level-1-260C-UNLIM -40 to 125 CVF TPS78230DDCR ACTIVE SOT-23-THIN DDC 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OCK TPS78230DDCT ACTIVE SOT-23-THIN DDC 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OCK TPS78230DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 ODE TPS78230DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 ODE TPS78233DDCR ACTIVE SOT-23-THIN DDC 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OAH TPS78233DDCT ACTIVE SOT-23-THIN DDC 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OAH TPS78236DDCR ACTIVE SOT-23-THIN DDC 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 SCE TPS78236DDCT ACTIVE SOT-23-THIN DDC 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 SCE TPS78236DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 SCE TPS78236DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 SCE (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
TPS78228DDCTG4
物料型号:TPS782xx系列

器件简介:TPS782系列是低压降调节器(LDO),专为电池供电应用设计,具有超低的静态电流(IQ为500 nA),适合用于微处理器、微控制器和其他电池供电应用。

引脚分配: - OUT:调节输出电压引脚,需要连接至少1μF的陶瓷电容以确保稳定性。 - EN:使能引脚,驱动此引脚超过1.2V可开启调节器,低于0.4V可关闭调节器,进入关机模式。 - GND:地引脚,需要接地以保证正常工作。 - IN:输入引脚,需要连接至少0.1μF的电容以确保稳定性。 - NC:无内部连接。

参数特性: - 输入电压范围:2.2V至5.5V - 输出电流:最大150mA - 工作温度范围:-40°C至125°C - 具有热关断和过流保护功能

功能详解: - 内部电流限制:在故障条件下保护调节器。 - 活跃的VOUT下拉:在设备关闭时放电VOUT。 - 关闭功能:EN引脚为高电平有效,与标准CMOS逻辑兼容。

应用信息: - TI MSP430附件应用 - 无线手持设备和智能手机 - MP3播放器 - 电池操作手持产品

封装信息: - 提供DDC(SOT23-5)或DRV(2mm x 2mm SON-6)封装选项
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