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TPS7A66-Q1, TPS7A69-Q1
ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
TPS7A6x-Q1 高电压、超低 I(q)、低压降稳压器
1 特性
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2 应用
符合汽车应用 应用
具有符合 AEC-Q100 测试指导的以下结果：
– 将整个文档中的器件温度等级 1
– 器件温度等级 0 级（仅限
TPS7A6650EDGNRQ1）
– 器件人体放电模型 (HBM) 静电放电 (ESD) 分类
等级 H2
– 器件带电器件模型 (CDM) ESD 分类等级 C4
器件结温范围：
–40°C 至 +150°C
4V 至 40V 宽输入电压范围，瞬态电压高达 45V
输出电流：150mA
低静态电流，I(q)：
– EN = 低电平（关断模式）时为 2µA
– 轻负载时典型值为 12µA
低等效串联电阻 (ESR) 陶瓷输出稳定电容器
(2.2µF-100µF)
150mA 时的压降电压为 300mV
（V(Vin)= 4V 时的典型值）
固定（3.3V 和 5V）和可调
（1.5V 至 5V）输出电压
（可调输出电压仅适用于 TPS7A66-Q1）
低输入电压跟踪
集成型加电复位：
– 可编程复位脉冲延迟
– 漏极开路复位输出
集成故障保护：
– 热关断
– 短路保护功能
输入电压检测比较器
（仅限 TPS7A69-Q1）
封装：
– 8 引脚 SOIC-D (TPS7A69-Q1)
– 8 引脚 HVSSOP-DGN (TPS7A6601-Q1)
硬件启用选项
V(bat)
TPS7A66-Q1
1
Vin
Vout
8
2
EN
PG
6
4
CT
GND
V(reg)
5
Copyright © 2017, Texas Instruments Incorporated
•
•
•
具有睡眠模式的信息娱乐系统
车身控制模块
常开电池 标准：
– 网关 应用
– 遥控免钥匙进入系统
– 发动机防盗系统
3 说明
TPS7A66-Q1 和 TPS7A69-Q1 是针对输入电压高达
40V 的运行电路而设计的低压降线性稳压器。这些器
件在无负载时的静态电流仅为 12µA，非常适合待机微
处理器控制单元系统，尤其是汽车 应用低功耗是一个
关键问题。
此器件特有集成的短路和过流保护。此器件在加电时执
行复位延迟以表示输出电压稳定且在稳压中。用户可使
用一个外部电容器来设定此延迟。低压跟踪特性允许使
用更小的输入电容器并且有可能在冷启动条件下无需使
用升压转换器。
此器件运行在 -40°C 至 125°C 的温度范围内。
TPS7A6650EDGNRQ1 器件符合 AEC-Q100 0 级标
准，工作温度范围为 –40°C 至 150°C。这些 特性 非
常适用于各类汽车应用中的 电源中对于高效率、高电
源密度和稳健性的需求。
器件信息(1)
器件型号
封装
封装尺寸（标称值）
TPS7A66-Q1
HVSSOP (8)
3.00mm × 3.00mm
TPS7A69-Q1
SOIC (8)
4.90mm × 3.91mm
(1) 如需了解所有可用封装，请参阅产品说明书末尾的可订购产品
附录。
输入电压感测选项
V(bat)
TPS7A69-Q1
1
Vin
2
SI
4
CT
Vout
8
SO
7
PG
6
GND
5
V(reg)
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLVSBL0
TPS7A66-Q1, TPS7A69-Q1
ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
www.ti.com.cn
目录
1
2
3
4
5
6
7
特性 ..........................................................................
应用 ..........................................................................
说明 ..........................................................................
修订历史记录 ...........................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
5
5
5
6
7
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 11
7.1 Overview ................................................................. 11
7.2 Functional Block Diagrams ..................................... 11
7.3 Feature Description................................................. 13
7.4 Device Functional Modes........................................ 17
8
Application and Implementation ........................ 18
8.1 Application Information............................................ 18
8.2 Typical Applications ................................................ 18
9 Power Supply Recommendations...................... 21
10 Layout................................................................... 21
10.1 Layout Guidelines ................................................. 21
10.2 Layout Examples................................................... 21
10.3 Power Dissipation and Thermal Considerations ... 22
11 器件和文档支持 ..................................................... 23
11.1
11.2
11.3
11.4
11.5
11.6
相关链接................................................................
接收文档更新通知 .................................................
社区资源................................................................
商标 .......................................................................
静电放电警告.........................................................
Glossary ................................................................
23
23
23
23
23
23
12 机械、封装和可订购信息 ....................................... 23
4 修订历史记录
注：之前版本的页码可能与当前版本有所不同。
Changes from Revision E (November 2014) to Revision F
Page
•
已更改 AEC-Q100 测试指南 特性 列表项并从前两个 AEC-Q100 子列表项中删除了温度范围 .............................................. 1
•
已更改 V(Vin) 更改为 VIN、将 Vin 更改为 VIN、将 V（输出电压）更改为 VOUT，将 Vout 更改为 VOUT，以及将 V(CT) 更改
为 VCT...................................................................................................................................................................................... 1
•
已添加 器件结温范围 特性 要点.............................................................................................................................................. 1
•
已更改 将整个文档中的相关器件更改成了 TPS7A66-Q1 和 TPS7A69-Q1 ........................................................................... 1
•
已更改 将整个文档中的 MSOP 更改为 HVSSOP .................................................................................................................. 1
•
Changed CT, EN, FB/DNC, PG, SO, and VOUT descriptions in Pin Functions table .......................................................... 4
•
Changed pin names FB/NU to FB/DNC, Vin to VIN, and Vout to VOUT in Pin Configuration and Functions section .......... 4
•
Changed SI parameter name description and added maximum specification to SI and FB, SO, PG rows in Absolute
Maximum Ratings table .......................................................................................................................................................... 4
•
Added parameter names to CT and FB, SO, PG rows in Absolute Maximum Ratings table ................................................ 4
•
Added lockout to Undervoltage lockout detection parameter name....................................................................................... 6
•
Added up to to Ilkg test conditions .......................................................................................................................................... 6
•
Added VOUT to unit of V(TH-POR) and V(Thres) .............................................................................................................................. 6
•
Added CT to V(th) parameter name......................................................................................................................................... 6
•
Added header for first section of Switching Characteristics table .......................................................................................... 7
•
Added UVLO Thresholds vs Temperature and Enable Thresholds vs Temperature figures................................................. 8
•
Added CT Charging Current (VCT = 0) and CT Charging Threshold figures .......................................................................... 9
•
Changed Device Functional Modes section ......................................................................................................................... 17
Changes from Revision D (October 2014) to Revision E
Page
•
Corrected voltage unit in Handling Ratings table from V to kV ............................................................................................. 5
2
版权 © 2012–2017, Texas Instruments Incorporated
TPS7A66-Q1, TPS7A69-Q1
www.ti.com.cn
Changes from Revision C (December 2013) to Revision D
ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
Page
•
已更改 CDM ESC 分类等级 ................................................................................................................................................... 1
•
Changed FB/NC pin to FB/NU in Pin Functions table Added NC and NU notes to pinout drawings ................................... 4
•
Removed ESD and Tstg specifications from the Absolute Maximum Ratings table ............................................................... 4
•
Added ESD Ratings table ...................................................................................................................................................... 5
•
Numerous changes throughout the Electrical Characteristics table ...................................................................................... 6
•
Added Switching Characteristics table ................................................................................................................................... 7
•
Moved an oscilloscope trace to the Applications Information section ................................................................................. 10
•
Changed de-glitch time in Power-On Reset (PG) section ................................................................................................... 13
•
Changed reset delay timer default delay to 290 µs from 150 µs ........................................................................................ 13
•
Changed voltage at which Power-on reset initializes to 91.6% of V(Vout) ............................................................................ 13
•
Changed selectable output voltage range and calculation for FB resistor divideer ............................................................. 15
Changes from Revision B (August 2013) to Revision C
Page
•
通过添加 -Q1 更正了 说明 部分中的部件号 ............................................................................................................................ 1
•
Changed Operating ambient temperature to Operating junction temperature ....................................................................... 4
•
Added PSRR graph to Typical Characteristics..................................................................................................................... 10
•
Deleted a paragraph from the Thermal Protection section................................................................................................... 16
Changes from Revision A (March 2013) to Revision B
•
Page
Added two conditions to Vdropout in the Electrical Characteristics table .................................................................................. 6
Changes from Original (December 2012) to Revision A
Page
•
Deleted the ORDERING INFORMATION table...................................................................................................................... 4
•
Changed From: TA Operating ambient temperature range –40 to 125°C To: TJ Operating ambient temperature
range –40 to 150°C ................................................................................................................................................................ 4
Copyright © 2012–2017, Texas Instruments Incorporated
3
TPS7A66-Q1, TPS7A69-Q1
ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
www.ti.com.cn
5 Pin Configuration and Functions
D Package (TPS7A69-Q1)
8-Pin SOIC
Top View
DGN Package (TPS7A66-Q1)
8-Pin HVSSOP
Top View
VIN
1
8
VOUT
VIN
1
8
VOUT
SI
2
7
SO
EN
2
7
FB/DNC
PG
NC
3
6
PG
CT
4
5
GND
NC
3
CT
6
5
4
GND
NC - No internal connection
NU - Make no external connection
NC - No internal connection
Pin Functions
PIN NO.
PIN NAME
SOIC-D
HVSSOPDGN
TYPE
CT
4
4
O
Reset-pulse delay adjustment. Connecting a capacitor from this pin to GND changes
the PG reset delay; see the Reset Delay Timer (CT) section for more details.
EN
—
2
I
Enable pin. The device enters the standby state when the enable pin becomes lower
than the enable threshold.
FB/DNC
—
7
I
Feedback pin when using external resistor divider or DNC pin when using the device
with a fixed output voltage.
GND
5
5
G
Ground reference
NC
3
3
—
Not-connected pin
PG
6
6
O
Power good. This open-drain pin must connect to VOUT via an external resistor. VPG
is logic level high when VOUT is above the power-on-reset threshold.
SI
2
I
Sense input pin to supervise input voltage. Connect via an external voltage divider to
VIN and GND.
SO
7
O
Sense output. This open-drain pin must connect to VOUT via an external resistor.
VSO is logic level low when VSI falls below the sense-low threshold.
VIN
1
1
P
Input power-supply voltage
VOUT
8
8
O
Regulated output voltage
Pad
—
—
Thermal pad for HVSSOP-DGN package
Thermal
pad
DESCRIPTION
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(2) (3)
(1)
MIN
MAX
UNIT
VIN, EN
Unregulated input
–0.3
45
V
VOUT
Regulated output
–0.3
7
V
SI
Sense input (2)
–0.3
VIN
V
CT
Reset delay input
–0.3
25
V
FB, SO, PG
Feedback, sense output, power good
–0.3
VOUT
V
TJ
Operating junction temperature range
–40
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
(2)
(3)
4
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to GND
Absolute maximum voltage, withstand 45 V for 200 ms
Copyright © 2012–2017, Texas Instruments Incorporated
TPS7A66-Q1, TPS7A69-Q1
www.ti.com.cn
ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
6.2 ESD Ratings
V(ESD)
(1)
Electrostatic discharge
MIN
MAX
Human body model (HBM), per AEC Q100-002 (1)
0
4
Charged device model (CDM), per AEC Corner pins (1, 4, 5, and 8)
Q100-011
Other pins
0
1
0
1
UNIT
kV
AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
spacer
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
TYP
MAX
UNIT
VIN
Unregulated input
4
40
V
VEN, VSI
High voltage (I/O)
0
40
V
VCT
CT pin voltage
0
20
V
VOUT
Regulated output
1.5
5.5
V
VPG, VSO, VFB
Low voltage (I/O)
0
5.5
CIN
Input capacitor (1)
COUT
Output capacitor (1)
2.2
100
µF
TJ
Operating junction temperature
–40
150
°C
(1)
10
V
µF
Values on this row refer to the nominal value of the capacitor.
6.4 Thermal Information
THERMAL METRIC (1)
TPS7A66-Q1
TPS7A69-Q1
HVSSOP
(8 PINS)
SOIC (8 PINS)
UNIT
RθJA
Junction-to-ambient thermal resistance
63.4
113.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
53.0
59.6
°C/W
RθJB
Junction-to-board thermal resistance
37.4
59.57
°C/W
ψJT
Junction-to-top characterization parameter
3.7
12.8
°C/W
ψJB
Junction-to-board characterization parameter
37.1
52.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
13.5
NA
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Copyright © 2012–2017, Texas Instruments Incorporated
5
TPS7A66-Q1, TPS7A69-Q1
ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
www.ti.com.cn
6.5 Electrical Characteristics
VIN = 14 V, 1 mΩ < ESR < 2 Ω, TJ = –40°C to 150°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE AND CURRENT (VIN)
Fixed 5-V output, IO = 1 mA
5.5
40
4
40
VIN
Input voltage
I(q)
Quiescent current
VIN = 5.5 V to 40 V, EN = ON, IO = 0.2 mA
20
µA
I(Sleep)
Input sleep current
No load current and EN = OFF
4
µA
I(EN)
EN pin current
V(EN) = 40 V
1
µA
V(bg)
Band gap
Reference voltage for FB
1.247
V
V(VinUVLO)
Undervoltage lockout detection
Ramp VIN down until output turns OFF
2.6
V
V(UVLOhys)
Undervoltage hysteresis
Fixed 3.3-V output, IO = 1 mA
12
1.199
1.223
1
V
V
ENABLE INPUT (EN)
VIL
Logic input low level
VIH
Logic input high level
0
0.4
1.7
V
V
REGULATED OUTPUT (VOUT)
VOUT
Regulated output
IO = 1 mA, TJ = 25°C
–1%
1%
VIN = 6 V to 40 V, IO = 1 mA to 150 mA, fixed 5-V version
–2%
2%
VIN = 4 V to 40 V, IO = 1 mA to 150 mA, fixed 3.3-V version
–2%
2%
VIN = VOUT + 0.45 V and Vin ≥ 4 V, IO = 1 mA to 150 mA,
adjustable version (1)
–2%
2%
V(line-reg)
Line regulation
VIN = 5.5 V to 40 V, IO = 50 mA
V(load-reg)
Load regulation
IO = 1 mA to 150 mA
V(dropout) = VIN – VOUT, IOUT = 80 mA
VIN – VOUT, IOUT = 150 mA
5
mV
20
mV
180
240
300
450
VIN = 3 V, V(dropout) = VIN – VOUT, IO = 5 mA
12
27.5
58
VIN = 3 V, V(dropout) =VIN –VOUT, IO = 30 mA
44
80
145
V(dropout)
Dropout voltage
IO
Output current
VOUT in regulation
I(lreg-CL)
Output current limit
VOUT short to ground
0
500
mV
150
mA
800
mA
VIN = 12 V, IL = 10 mA, output capacitance = 2.2 µF
PSRR
Power supply ripple rejection (2)
Frequency = 100 Hz
60
Frequency = 100 kHz
40
dB
VOLTAGE SENSING PRE-WARNING
VI(S-th)
Sense low threshold
V(SI) decreasing
VI(S-th,hys)
Sense threshold hysteresis
VOL(S)
Sense output low voltage
(V(SI) ≤ 1.06 V, VIN ≥ 4 V, R(SO) = 10 kΩ to VOUT
IOH(S)
Sense output leakage
(V(SO) = 5 V, V(SI) ≥ 1.5 V)
II(S)
Sense input current
1.089
1.123
1.157
50
100
150
–1
0.1
V
mV
0.4
V
1
µA
1
µA
RESET (PG)
VOL
Reset output, low voltage
IOL = 0.5 mA
Ilkg
Leakage current
Reset pulled up to VOUT through a 10-kΩ resistor
V(TH-POR)
Power-on-reset threshold
VOUT increasing
V(Thres)
Hysteresis
89.6
91.6
0.4
V
1
µA
93.6
2
% of VOUT
% of VOUT
RESET DELAY (CT)
I(Chg)
Delay-capacitor charging current
V(th)
CT threshold to release PG high
VCT = 0 V
1.4
µA
1
V
OPERATING TEMPERATURE RANGE
TJ
Junction temperature
T(shutdown)
Junction shutdown temperature
175
°C
T(hyst)
Hysteresis of thermal shutdown
20
°C
(1)
(2)
6
–40
150
°C
Adjustable version with precision external feedback resistor with tolerance of less than ±1%.
Design information – not tested.
Copyright © 2012–2017, Texas Instruments Incorporated
TPS7A66-Q1, TPS7A69-Q1
www.ti.com.cn
ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
6.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TIMING FOR SENSE INPUT AND OUTPUT (SI, SO)
t(SDeglitch,rise)
SI or SO rising deglitch time
50
260
µs
t(SDeglitch,drop)
SI or SO falling deglitch time
30
240
µs
TIMING FOR RESET (PG)
t(POR)
Power-on-reset delay
t(POR-fixed)
t(Deglitch)
(1)
Where C = delay capacitor value; capacitance
C = 100 nF (1)
No capacitor on pin
Reset deglitch time
–6
This information only is not tested in production and equation basis is (C × 1) / 1 × 10
Where C = Delay capacitor value. Capacitance C range = 100 pF to 100 nF.
Copyright © 2012–2017, Texas Instruments Incorporated
50
100
180
ms
100
290
650
µs
20
250
µs
= td (delay time).
7
TPS7A66-Q1, TPS7A69-Q1
ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
www.ti.com.cn
3
1.6
2.8
1.5
VIL
2.4
2.2
2
1.8
1.3
1.2
1.1
1
0.9
1.6
UVLO Falling
1.4
-40
-25
-10
5
0.8
UVLO Rising
20 35 50 65
Temperature (qC)
80
95
110 125
0.7
-40
Figure 1. UVLO Thresholds vs Temperature
5
20 35 50 65
Temperature (qC)
80
95
110 125
T = ±40ƒC
0.8
91.0
90.5
90.0
89.5
89.0
T = 25ƒC
0.6
T = 125ƒC
0.4
0.2
0.0
±0.2
±0.4
±0.6
±0.8
±1.0
88.5
±40 ±25 ±10
5
20
35
50
65
80
95
Temperature (ƒC)
110 125
0
120
5
15
20
25
30
35
40
Input Voltage (V)
45
C002
Figure 4. Line Regulation (VIN = 14 V, IL = 1 mA)
25
T = ±40ƒC
T = ±40ƒC
T = 25ƒC
100
10
C001
Figure 3. Power-Good Threshold Voltage vs Temperature
(VIN = 14 V, No Load)
T = 25ƒC
Quiescent Current ( A)
T = 125ƒC
80
IGND ( A)
-10
Figure 2. Enable Thresholds vs Temperature
PG Rising
PG Falling
91.5
-25
1.0
Nominal Output Voltage (%)
Nominal Output Voltage (%)
92.0
60
40
20
0
20
T = 125ƒC
15
10
5
0
0
20
40
60
Output Current (mA)
80
100
C003
Figure 5. Ground Current vs Output Current (VIN = 14 V)
8
VIH
1.4
2.6
Enable Threshold (V)
Undervoltage Lockout (V)
6.7 Typical Characteristics
0
5
10
15
20
25
Input Voltage (V)
30
35
40
45
C004
Figure 6. Quiescent Current vs Input Voltage (IL = 0)
Copyright © 2012–2017, Texas Instruments Incorporated
TPS7A66-Q1, TPS7A69-Q1
www.ti.com.cn
ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
Typical Characteristics (continued)
2.0
1.5
T = 25ƒC
T = 125ƒC
1.0
0.5
0.0
±0.5
±1.0
T = 125ƒC
200
150
100
50
±2.0
0
0
10
20
30
40
50
60
70
80
90
Output Current (mA)
0
100
20
30
40
50
60
70
80
90
Output Current (mA)
100
C006
Figure 8. Dropout Voltage vs Output Current (VIN = 4 V)
6
3.5
5
3.0
Output Voltage (V)
Output Voltage (V)
10
C005
Figure 7. Load Regulation (VIN = 14 V)
4
3
2
1
2.5
2.0
1.5
1.0
0.5
0
0.0
0
5
10
15
20
25
30
35
Supply Voltage (V)
40
0
1.9
0.975
0.95
1.7
0.925
CT Threshold (V)
1.8
1.6
1.5
1.4
1.3
110 125
Figure 11. CT Charging Current (VCT = 0)
Copyright © 2012–2017, Texas Instruments Incorporated
35
40
C008
0.825
0.8
95
30
0.85
0.775
80
25
0.9
1.1
20 35 50 65
Temperature (qC)
20
0.875
1.2
5
15
Figure 10. Output Voltage vs Supply Voltage
(Fixed 3.3-V Version, IL = 0)
1
-10
10
Supply Voltage (V)
2
-25
5
C007
Figure 9. Output Voltage vs Supply Voltage
(Fixed 5-V Version, IL = 0)
Delay-Capacitor Charging Current ( PA)
T = 25ƒC
250
±1.5
1
-40
T = ±40ƒC
300
Dropout Voltage (mV)
Nominal Output Voltage (%)
350
T = ±40ƒC
0.75
-40
-25
-10
5
20 35 50 65
Temperature (qC)
80
95
110 125
Figure 12. CT Charging Threshold
9
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ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
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Typical Characteristics (continued)
100.0
120
100
80.0
PSRR (dB)
CLOAD ( F)
80
60.0
Stable Region
40.0
60
40
20
20.0
0
2.2
0.0
0.001
0.0
±20
0.5
1.0
1.5
ESR of Cout ( )
2.0
C009
Figure 13. Load Capacitance vs ESR Stability
All oscilloscope waveforms were taken at room temperature.
Figure 15. Load Transient Response, 10 ms/div
All oscilloscope waveforms were taken at room temperature.
Figure 17. Line Transient Response, IL = 1 mA, 1 V/µs
10
10
100
1k
10k
100k
1M
10M
100M
Frequency (Hz)
C010
Figure 14. Power-Supply Rejection Ratio vs Frequency
All oscilloscope waveforms were taken at room temperature.
Figure 16. Load Transient Response, 10 ms/div
All oscilloscope waveforms were taken at room temperature.
Figure 18. Line Transient Response, IL = 10 mA, 1 V/µs
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ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
7 Detailed Description
7.1 Overview
This device is a combination of a low-dropout linear regulator with reset function. The power-on reset initializes
once the VOUT output exceeds 91.6% of the target value. The power-on-reset delay is a function of the value set
by an external capacitor on the CT pin before releasing the PG pin high.
7.2 Functional Block Diagrams
TPS7A66-Q1
UVLO
Comp
Vref(3)
+
Band Gap
1
Vin
V(bat)
22 μF
0.1 μF
Vref1
Overcurrent
Detection
EN
2
Logic
Control
Thermal
Shutdown
Regulator
Control
8
+
GND
Vout
V(reg)
4.7 μF
Vref(1)
V(reg)
5
10 kΩ
6
CT
4
PG
Reset
Control
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Figure 19. TPS7A66-Q1 Functional Block Diagram
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Functional Block Diagrams (continued)
TPS7A69-Q1
UVLO
Comp
Vref3
+
Band Gap
1
Vin
V(bat)
22 μF
0.1 μF
Vref(1)
Overcurrent
Detection
Logic
Control
Thermal
Shutdown
Regulator
Control
8
+
GND
Vout
V(reg)
4.7 μF
Vref(1)
V(reg)
5
10 kΩ
6
CT
PG
Reset
Control
4
V(reg)
V(bat)
10 kΩ
7
SO
SI
2
+
Vref(1)
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Figure 20. TPS7A69-Q1 Functional Block Diagram
12
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7.3 Feature Description
7.3.1 Enable (EN)
This is a high-voltage-tolerant pin; high input activates the device and turns the regulator ON. One can connect
this input to the VIN pin for self-bias applications.
7.3.2 Regulated Output (VOUT)
This is the regulated output based on the required voltage. The output has current limitation. During initial power
up, the regulator has a soft start incorporated to control initial current through the pass element and the output
capacitor.
In the event the regulator drops out of regulation, the output tracks the input minus a drop based on the load
current. When the input voltage drops below the UVLO threshold, the regulator shuts down until the input voltage
recovers above the minimum start-up level.
7.3.3 Power-On Reset (PG)
This is an output with an external pullup resistor to the regulated supply. The output remains low until the
regulated VOUT has exceeded approximately 90% of the set value and the power-on-reset delay has expired. The
on-chip oscillator presets the delay. The regulated output falling below the 90% level asserts this output low after
a short de-glitch time of approximately 250 µs (typical).
7.3.4 Reset Delay Timer (CT)
An external capacitor on this pin sets the timer delay before the reset pin is asserted high. The constant output
current charges an external capacitor until the voltage exceeds a threshold to trip an internal comparator. If this
pin is open, the default delay time is 290 µs (typ). After releasing the PG pin high, the capacitor on this pin
discharges, thus allowing the capacitor to charge from approximately 0.2 V for the next power-on-reset delaytimer function.
An external capacitor, CT, defines the reset-pulse delay time, t(POR), with the charge time of:
C(CT) ´ 1 V
t (POR) =
1 mA
(1)
The power-on reset initializes once the output VOUT exceeds 91.6% of the programmed value. The power-onreset delay is a function of the value set by an external capacitor on the CT pin before the releasing of the PG
pin high.
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Feature Description (continued)
Vin
t < t(Deglitch)
VTH(POR)
V(Thres)
Vout
V(th)
V(th)
CT
t(POR)
t(POR)
t(Deglitch)
PG
t(Deglitch)
Figure 21. Conditions for Activation of Reset
Vin
0.9 × V (th)
Vout
CT
V(th)
t(POR)
PG
Figure 22. External Programmable Reset Delay
14
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Feature Description (continued)
7.3.5 Sense Comparator (SI and SO for TPS7A69-Q1)
The sense comparator compares the input signal with an internal voltage reference of 1.223 V for rising and
1.123 V for falling threshold. The use of an external voltage divider makes this comparator very flexible in the
application.
The device can supervise the input voltage either before or after the protection diode and give additional
information to the microprocessor, like low-voltage warnings.
The regulator operates in low-power mode when the output load is below 2 mA (typical, 1-mA to 10-mA range).
In this mode, the regulator output tolerance is approximately VOUT ± 1%.
7.3.6 Adjustable Output Voltage (FB for TPS7A6601-Q1)
One can select an output voltage between 1.5 V and 5 V by using an external resistor divider. Calculate the
output voltage using the following equation, where V(FB) = 1.223 V. The recommendation for R1 and R2 is that
both be less than 100 kΩ.
R1 ö
æ
V(Vout) = V(FB) ´ ç 1 +
R2 ÷ø
è
(2)
TPS7A6601-Q1
V(bat)
1
Vin
Vout
8
V(reg)
C2
C1
R1
2
EN
FB/NU
7
R3
R2
4
CT
PG
6
GND
5
C3
Figure 23. External Feedback Resistor Divider
7.3.7 Undervoltage Shutdown
There is an internally fixed undervoltage shutdown threshold. Undervoltage shutdown activates when the input
voltage on VIN drops below V(VinUVLO). This ensures the regulator is not latched into an unknown state during low
input supply voltage. If the input voltage has a negative transient which drops below the UVLO threshold and
recovers, the regulator shuts down and powers up with a normal power-up sequence once the input voltage is
above the required levels.
7.3.8 Low-Voltage Tracking
At low input voltages, the regulator drops out of regulation and the output voltage tracks input minus a voltage
based on the load current (IO) and switch resistance (R(SW)). This allows for a smaller input capacitor and can
possibly eliminate the need of using a boost convertor during cold-crank conditions.
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Feature Description (continued)
7.3.9 Thermal Shutdown
These devices incorporate a thermal shutdown (TSD) circuit as a protection from overheating. For continuous
normal operation, the junction temperature should not exceed the TSD trip point. If the junction temperature
exceeds the TSD trip point, the output turns off. When the junction temperature falls below the TSD trip point, the
output turns on again.
Thermal protection disables the output when the junction temperature rises to approximately 170°C, allowing the
device to cool. Cooling of the junction temperature to approximately 150°C enables the output circuitry.
Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may
cycle on and off. This cycling limits the dissipation of the regulator, protecting it from damage as a result of
overheating.
The purpose of the design of the internal protection circuitry of the TPS7A66-Q1, TPS7A69-Q1 is for protection
against overload conditions, not as a replacement for proper heat-sinking. Continuously running the TPS7A66Q1 or TPS7A69-Q1 into thermal shutdown degrades device reliability.
16
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ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
7.4 Device Functional Modes
Table 1 provides a quick comparison between the regulation, disabled, and current limit modes of operation.
Table 1. Device Functional Modes Comparison
OPERATING MODE
(1)
(2)
(3)
PARAMETER
VIN
EN (1)
IO
TJ
Regulation (2)
VIN > VOUT(nom) + V(dropout)
VEN > VIH
IO < I(Ireg-CL)
TJ ≤ TJ(maximum)
Disabled (3)
VIN < V(VinUVLO)
VEN < VIL
—
TJ > Tsd
Current limit operation
—
—
IO ≥ I(Ireg-CL)
—
EN is only required for the TPS7A66-Q1 devices.
All table conditions must be met.
The device is disabled when any condition is met.
7.4.1 Regulation
The device regulates the output to the nominal output voltage when all the conditions in Table 1 are met.
7.4.2 Disabled
When disabled, the pass device is turned off and the internal circuits are shut down.
7.4.3 Operation With V(VinUVLO)< VIN < VIN(min)
When the input voltage is ramping up the device typically turns on when the input voltage is greater than
V(VinUVLO) plus V(UVLOhys). When the input voltage is ramping down the device is specified to turn off when the
input voltage becomes less than or equal to V(VinUVLO).
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS7A66-Q1 and TPS7A69-Q1 devices are 150-mA low-dropout linear regulators designed for up to 40-V
VIN operation with only 12 µA quiescent current at no load. One can use the Pspice transient model, which is
downloadable from the product folder (see 相关链接), for evaluating the base function of the devices. in addition,
there are specific EVMs designed for these devices. Both the EVM and its user guide are available on the
product folder as well.
8.2 Typical Applications
Figure 24 and Figure 26 depict typical application circuits for the TPS7A66-Q1 and TPS7A69-Q1, respectively.
One may use different values of external components, depending on the end application. An application may
require a larger output capacitor during fast load steps in order to prevent reset from occurring. TI recommends a
low-ESR ceramic capacitor with dielectric of type X5R or X7R.
8.2.1 TPS7A66-Q1 Typical Application
TPS7A66-Q1
V(bat)
1
Vin
Vout
8
V(reg)
2.2 μF
1 μF
10 kΩ
2
4
1 nF
EN
PG
6
GND
5
CT
Copyright © 2017, Texas Instruments Incorporated
Figure 24. Typical Application Schematic for TPS7A66-Q1
8.2.1.1 Design Requirements
For this design example, use the parameters listed in Table 2 as the design parameters.
Table 2. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Input voltage range
4 V to 40 V
Output voltage
3.3 V
Output current rating
150 mA
Output capacitor range
2.2 µF to 100 µF
Output capacitor ESR range
1 mΩ to 2 Ω
CT capacitor range
100 pF to 100 nF
18
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ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
8.2.1.2 Detailed Design Procedure
To
•
•
•
•
•
•
begin the design process, determine the following:
Input voltage range
Output voltage
Output current rating
Input capacitor
Output capacitor
Power-up-reset delay time
8.2.1.2.1 Input Capacitor
The device requires an input decoupling capacitor, the value of which depends on the application. The typical
recommended value for the decoupling capacitor is 10 µF. The voltage rating must be greater than the maximum
input voltage.
8.2.1.2.2 Output Capacitor
The device requires an output capacitor to stablize the output voltage. The capacitor value should be between
2.2 µF and 100 µF. The ESR range should be between 1 mΩ and 2 Ω. TI recommends to selecting a ceramic
capacitor with low ESR to improve the load transient response.
8.2.1.3 Application Curve
Figure 25. Power Up (5 V), 20 ms/div, IL = 20 mA
8.2.2 TPS7A69-Q1 Typical Application
TPS7A69-Q1
V(bat)
1
Vin
Vout
8
1 μF
V(reg)
2.2 μF
10 kΩ
R3
2
SI
SO
7
PG
6
GND
5
10 kΩ
2.2 μF
R4
4
CT
1 nF
Copyright © 2017, Texas Instruments Incorporated
Figure 26. Typical Application Schematic for TPS7A69-Q1
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8.2.2.1 Design Requirements
For this design example, use the parameters listed in Table 2 as the input parameters.
Table 3. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Input voltage range
4 V to 40 V
Output voltage
3.3 V
Output current rating
150 mA
Output capacitor range
2.2 µF to 100 µF
Output capacitor ESR range
1 mΩ to 2 Ω
CT capacitor range
100 pF to 100 nF
Low-voltage tracking threshold
6 V to 9 V
8.2.2.2 Detailed Design Procedure
To
•
•
•
•
•
•
•
begin the design process, determine the following:
Input voltage range
Output voltage
Output current rating
Input capacitor
Output capacitor
Power-up-reset delay time
Low-voltage tracking threshold
8.2.2.2.1 Low-Voltage Tracking Threshold
After determining the low-voltage tracking threshold, calculate the ratio of the resistor divider connected to VIN,
SI, and GND by the following equation:
R3 V(LT)
=
-1
R4 1.223
(3)
TI recommends that the values of both R3 and R4 be less than 100 kΩ.
8.2.2.3 Application Curve
Figure 27. Power Up (5 V), 20 ms/div, IL = 20 mA
20
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ZHCSAM1F – DECEMBER 2012 – REVISED DECEMBER 2017
9 Power Supply Recommendations
Design of the device is for operation from an input voltage supply with a range between 4 V and 28 V. This input
supply must be well regulated. If the input supply is located more than a few inches from the TPS7A66-Q1 or
TPS7A69-Q1 device, TI recommends adding an electrolytic capacitor with a value of 22 µF and a ceramic
bypass capacitor at the input.
10 Layout
10.1 Layout Guidelines
The high impedance of the FB pin makes the regulator sensitive to parasitic capacitances that may couple
undesirable signals from nearby components (especially from logic and digital devices, such as microcontrollers
and microprocessors); these capacitive-coupled signals may produce undesirable output voltage transients. In
these cases, TI recommends the use of a fixed-voltage version of the TPS7A66-Q1, or isolation of the FB node
by flooding the local PCB area with ground-plane copper to minimize any undesirable signal coupling.
10.1.1 Package Mounting
Solder pad footprint recommendations for the TPS7A66-Q1 and TPS7A69-Q1 are available at the end of this
product data sheet and at www.ti.com.
10.1.2 Board Layout Recommendations to Improve PSRR and Noise Performance
For the layout of TPS7A66-Q1 and TPS7A69-Q1, place the input and output capacitors close to the devices as
shown in Figure 28 and Figure 29, respectively. In order to enhance the thermal performance, TI recommends
surrounding the device with some vias.
To improve ac performance such as PSRR, output noise, and transient response, TI recommends a board
design with separate ground planes for VIN and VOUT, with each ground plane connected only at the GND pin
of the device. In addition, the ground connection for the output capacitor should connect directly to the GND pin
of the device.
Minimize equivalent series inductance (ESL) and ESR in order to maximize performance and ensure stability.
Place every capacitor as close as possible to the device and on the same side of the PCB as the regulator itself.
Do not place any of the capacitors on the opposite side of the PCB from where the regulator is installed. TI
strongly discourages the use of vias and long traces because they may impact system performance negatively
and even cause instability.
If possible, and to ensure the maximum performance specified in this product data sheet, use the same layout
pattern used for the TPS7A66-Q1 and TPS7A69-Q1 evaluation board, available at www.ti.com.
10.2 Layout Examples
Vin
Vout
EN
FB/NU
NC
PG
CT
GND
Power Ground
Figure 28. TPS7A66-Q1 Board Layout Diagram
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www.ti.com.cn
Layout Examples (continued)
Vin
Vout
SI
SO
NC
PG
CT
GND
Power Ground
Figure 29. TPS7A69-Q1 Board Layout Diagram
10.3 Power Dissipation and Thermal Considerations
Calculate power dissipated in the device using Equation 4.
space
PD = I O ´ (V(Vin) - V(Vout) ) + I (q) ´ V(Vin)
(4)
where:
PD = continuous power dissipation
IO = output current
VIN = input voltage
VOUT = output voltage
As I(q)
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