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TPS7A80
SBVS135J – JUNE 2010 – REVISED JANUARY 2018
TPS7A80 Low-Noise, Wide-Bandwidth, High PSRR,
Low-Dropout 1-A Linear Regulator
1 Features
3 Description
•
•
•
•
The TPS7A80 family of low-dropout linear regulators
(LDOs) offer very high power-supply ripple rejection
(PSRR) at the output. This LDO family uses an
advanced BiCMOS process and a PMOSFET pass
device to achieve very low noise, excellent transient
response, and excellent PSRR performance.
1
•
•
•
•
•
•
•
Low-Dropout 1-A Regulator With Enable
Adjustable Output Voltages: 0.8 V to 6 V
Fixed Output Voltages: 0.8 V to 6 V
Wide-Bandwidth High PSRR:
– 63 dB at 1 kHz
– 57 dB at 100 kHz
– 38 dB at 1 MHz
Low Noise: (14 × VOUT ) μVRMS Typical (100 Hz to
100 kHz)
Stable with a 4.7-μF Ceramic Capacitor
Excellent Load/Line Transient Response
3% Overall Accuracy (Over Load/Line/Temp)
Overcurrent and Overtemperature Protection
Very Low Dropout: 170 mV Typical at 1 A
3-mm × 3-mm VSON-8 DRB Package
The TPS7A80 family is stable with a 4.7-μF ceramic
output capacitor, and uses a precision voltage
reference and feedback loop to achieve a worst-case
accuracy of 3% over all load, line, process, and
temperature variations.
This family is fully specified over the temperature
range of TJ = –40°C to +125°C, and is offered in a 3mm × 3-mm, VSON-8 package with a thermal pad.
Device Information(1)
PART NUMBER
TPS7A80
BODY SIZE (NOM)
3.00 mm × 3.00 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
2 Applications
•
•
•
PACKAGE
VSON (8)
Telecom Infrastructure
Audio
High-Speed I/F (PLL/VCO)
Typical Application Diagram
Optional 1.0mF input capacitor.
May improve source impedance,
noise, or PSRR.
VIN
IN
R1
TPS7A8001
EN
FB
GND
VEN
VOUT
OUT
NR
4.7mF
Ceramic
R2
To avoid inrush current,
it is recommended to
always connect a
1nF to 10nF capacitor
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS7A80
SBVS135J – JUNE 2010 – REVISED JANUARY 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
4
5
6.1
6.2
6.3
6.4
6.5
6.6
5
5
5
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 12
7.1 Overview ................................................................. 12
7.2 Functional Block Diagram ....................................... 12
7.3 Feature Description................................................. 13
7.4 Device Functional Modes........................................ 14
8
Application and Implementation ........................ 15
8.1 Application Information............................................ 15
8.2 Typical Application .................................................. 15
9 Power Supply Recommendations...................... 18
10 Layout................................................................... 18
10.1 Layout Guidelines ................................................. 18
10.2 Layout Example .................................................... 21
11 Device and Documentation Support ................. 22
11.1
11.2
11.3
11.4
11.5
11.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
22
12 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision I (August 2015) to Revision J
Page
•
Added new fixed voltage devices and associated content to data sheet .............................................................................. 1
•
Changed device name to generic part number to show new fixed voltage device options ................................................... 1
•
Added SNS pin and description to Pin Functions table ......................................................................................................... 4
•
Changed TA to TJ in Recommended Operating Conditions table .......................................................................................... 5
•
Added fixed-voltage-version values to Electrical Characteristics table ................................................................................. 6
•
Added test conditions to VNR parameter in Electrical Characteristics table ........................................................................... 6
•
Added new note (3) to output accuracy parameter in Electrical Characteristics table........................................................... 6
•
Deleted typical value for ISHDN in Electrical Characteristics table .......................................................................................... 6
Changes from Revision H (January 2013) to Revision I
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Deleted "Fixed Output Voltages: 0.8 V to 5 V Using Innovating Facatory EEPROM Programming" bullet from Features ... 1
•
Changed "12.6" to "14" in Low Noise bullet ........................................................................................................................... 1
•
Deleted SNS row from Pin Functions table ........................................................................................................................... 4
•
Deleted fixed version from VOUT row in Electrical Characteristics ......................................................................................... 6
•
Deleted ISNS row from Electrical Characteristics ................................................................................................................. 6
Changes from Revision G (April 2012) to Revision H
•
2
Page
Updated Figure 8.................................................................................................................................................................... 7
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SBVS135J – JUNE 2010 – REVISED JANUARY 2018
Changes from Revision F (March 2012) to Revision G
•
Page
Changed Thermal Information table values, added new footnote 2, changed footnote 3...................................................... 5
Changes from Revision E (February 2012) to Revision F
Page
•
Changed Low Noise Features bullet ...................................................................................................................................... 1
•
Updated Equation 3.............................................................................................................................................................. 17
Changes from Revision D (December 2010) to Revision E
Page
•
Changed Low Noise Features bullet ...................................................................................................................................... 1
•
Changed caption of front-page application circuit .................................................................................................................. 1
•
Updated Figure 12.................................................................................................................................................................. 7
•
Updated Figure 26................................................................................................................................................................ 10
•
Added Equation 1 note in Start-up section........................................................................................................................... 14
•
Updated Equation 3.............................................................................................................................................................. 17
Changes from Revision C (September, 2010) to Revision D
Page
•
Updated front-page figure with new characteristic graph ....................................................................................................... 1
•
Revised Figure 17 .................................................................................................................................................................. 8
•
Changed Figure 18................................................................................................................................................................. 8
Changes from Revision B (August, 2010) to Revision C
Page
•
Changed data sheet title......................................................................................................................................................... 1
•
Changed ultra-high PSRR to wide-bandwidth lhgh PSRR in Features list ............................................................................ 1
•
Corrected typos in Figure 21 through Figure 23 .................................................................................................................... 9
•
Revised first paragraph of Application Information to remove phrase ultra-wide bandwidth ............................................... 15
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SBVS135J – JUNE 2010 – REVISED JANUARY 2018
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5 Pin Configuration and Functions
DRB Package
8-Pin VSON
Top View
OUT
1
8
IN
OUT
2
7
IN
FB/SNS
3
6
NR
GND
4
5
EN
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
EN
5
I
Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator into
shutdown mode. Refer to Shutdown in the Application and Implementation section for more details. EN
must not be left floating and can be connected to IN if not used.
FB/SNS
3
I
FB (adjustable version only): This pin is the input to the control loop error amplifier and is used to set the
output voltage of the device.
SNS (fixed versions only): Output voltage sense pin. (1)
GND
4, pad
—
IN
7, 8
I
Unregulated input supply.
OUT
1, 2
O
Regulator output. A 4.7-μF or larger capacitor of any type is required for stability.
6
—
Connect an external capacitor between this pin and ground to reduce output noise to very low levels.
Also, the capacitor slows down the VOUT ramp (RC softstart).
NR
(1)
4
Ground.
In order to minimize the trace resistive drop, connect the SNS pin close to the load, and make sure that the trace inductance to the load
is also minimized.
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SBVS135J – JUNE 2010 – REVISED JANUARY 2018
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
Voltage
Current
(2)
MAX
–0.3
7
FB, NR
–0.3
3.6
EN
–0.3
VIN + 0.3 (2)
OUT
–0.3
7
OUT
Temperature
(1)
MIN
IN
UNIT
V
Internally Limited
Operating virtual junction, TJ
–55
150
Operating free air temperature, TA
–40
125
Storage, Tstg
–55
150
A
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VEN absolute maximum rating is VIN + 0.3 V or 7 V, whichever is smaller.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
2.2
6.5
UNIT
VIN
Input voltage (1)
IOUT
Output current
0
1
A
TJ
Operating junction temperature
–40
125
°C
TA
Operating free air temperature
–40
125
°C
(1)
V
Minimum VIN = VOUT + VDO or 2.2 V, whichever is greater.
6.4 Thermal Information
TPS7A80
THERMAL METRIC (1) (2)
DRB (VSON) (3)
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
47.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
53.9
°C/W
RθJB
Junction-to-board thermal resistance
23.4
°C/W
ψJT
Junction-to-top characterization parameter
1
°C/W
ψJB
Junction-to-board characterization parameter
23.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
7.4
°C/W
(1)
(2)
(3)
For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.
Thermal data for the DRB package are derived by thermal simulations based on JEDEC-standard methodology as specified in the
JESD51 series. The following assumptions are used in the simulations:
(a) The exposed pad is connected to the PCB ground layer through a 2 × 2 thermal via array.
(b) The top and bottom copper layers are assumed to have a 5% thermal conductivity of copper representing a 20% copper coverage.
(c) This data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3 inches × 3 inches copper
area. To understand the effects of the copper area on thermal performance, refer to the Power Dissipation and Estimating Junction
Temperature sections.
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6.5 Electrical Characteristics
At TJ = –40°C to +125°C, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 1 mA, VEN = 2.2 V, COUT = 4.7 μF, and
CNR = 0.01 μF (unless otherwise noted). TPS7A8001 tested at VOUT = 0.8 V and VOUT = 6 V. Typical values are at TJ = 25°C.
PARAMETER
VNR
Internal reference
VOUT
Output voltage
Output accuracy (1) (2)
MIN
TYP
MAX
UNIT
Adjustable and Fixed VOUT = 1.2 V
TEST CONDITIONS
0.79
0.8
0.81
V
Fixed VOUT ≥ 1.8 V
1.23
1.243
1.26
V
Adjustable version only (TPS7A8001)
0.8
6
V
Fixed versions only
1.2
5
V
VOUT + 0.5 V ≤ VIN ≤ 6 V, VIN ≥ 2.5 V,
100 mA ≤ IOUT ≤ 500 mA, 0°C ≤ TJ ≤ 85°C
–2%
2%
VOUT + 0.5 V ≤ VIN ≤ 6.5 V, VIN ≥ 2.2 V,
100 mA ≤ IOUT ≤ 1 A
–3%
ΔVOUT/ΔVIN
Line regulation
VOUT(NOM) + 0.5 V ≤ VIN ≤ 6.5 V, VIN ≥ 2.2 V,
IOUT = 100 mA
ΔVOUT/ΔIOUT
Load regulation
100 mA ≤ IOUT ≤ 1 A
Dropout voltage (3)
VDO
ICL
Output current limit
IGND
Ground pin current
2
mV
VOUT + 0.5 V ≤ VIN ≤ 6.5 V, VIN ≥ 2.5 V,
IOUT = 750 mA, VFB = GND or VSNS = GND
350
mV
VOUT + 0.5 V ≤ VIN ≤ 6.5 V, VIN ≥ 2.5 V,
IOUT = 1 A, VFB = GND or VSNS = GND
500
mV
VOUT = 0.85 × VOUT(NOM),
VIN ≥ 3.3 V
Adjustable
1100
Fixed
1100
μA
120
μA
IOUT = 1 A
350
μA
2
μA
1
μA
VIN = 6.5 V, VFB = 0.8 V
VIN = 4.3 V, VOUT = 3.3 V,
IOUT = 750 mA
BW = 100 Hz to 100 kHz,
VIN = 4.3 V, VOUT = 3.3 V,
IOUT = 100 mA
48
dB
f = 1 kHz
63
dB
f = 10 kHz
63
dB
f = 100 kHz
57
dB
f = 1 MHz
38
dB
CNR = 0.001 μF
14.6 × VOUT
μVRMS
CNR = 0.01 μF
14.3 × VOUT
μVRMS
13.9 × VOUT
μVRMS
CNR = 0.1μF
V
3.6 V < VIN ≤ 6.5 V, RL = 1 kΩ
1.35
V
VEN(LO)
Enable low (shutdown)
IEN(HI)
Enable pin current, enabled VIN = VEN = 6.5 V
tSTR
Start-up time
VOUT(NOM) = 3.3 V,
VOUT = 0%–90% VOUT(NOM),
RL = 3.3 kΩ, COUT = 4.7 μF
UVLO
Undervoltage lockout
VIN rising, RL = 1 kΩ
UVLO hysteresis
VIN falling, RL = 1 kΩ
Thermal shutdown
temperature
6
f = 100 Hz
1.2
Enable high (enabled)
(3)
0.02
2.2 V ≤ VIN ≤ 3.6 V, RL = 1 kΩ
VEN(HI)
(2)
mA
100
Feedback pin current
(TPS7A8001)
(1)
2000
2000
60
IFB
TSD
1400
IOUT = 1 mA, fixed versions only
VEN ≤ 0.4 V, VIN ≥ 2.2 V, RL = 1 kΩ, 0°C ≤ TJ ≤
85°C
Output noise voltage
μV/mA
250
Shutdown current (IGND)
VN
μV/V
VOUT + 0.5 V ≤ VIN ≤ 6.5 V, VIN ≥ 2.2 V,
IOUT = 500 mA, VFB = GND or VSNS = GND
ISHDN
Power-supply rejection
ratio
3%
150
IOUT = 1 mA, adjustable version only
PSRR
±0.3%
RL = 1 kΩ
0
0.02
0.4
V
1
μA
CNR = 1 nF
0.1
ms
CNR = 10 nF
1.6
ms
1.86
2
2.10
V
75
mV
Shutdown, temperature increasing
160
°C
Reset, temperature decreasing
140
°C
The TPS7A8001 (adjustable) does not include external resistor tolerances and is not tested at these conditions: VOUT = 0.8 V, 4.5 V ≤
VIN ≤ 6.5 V, and 750 mA ≤ IOUT ≤ 1 A because power dissipation is higher than maximum rating of the package.
The TPS7A8012, TPS7A8018, and TPS7A8033 are not tested at these conditions: 4.5 V ≤ VIN ≤ 6.5 V, and 750 mA ≤ IOUT ≤ 1 A
because power dissipation is higher than maximum rating of the package.
VDO is not measured for fixed output voltage devices with VOUT < 1.7 V because minimum VIN = 2.2 V.
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6.6 Typical Characteristics
At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF,
COUT = 4.7 μF, and CNR = 0.01 μF, all temperature values refer to TJ (unless otherwise noted).
3.399
3.399
+125°C
+85°C
+25°C
0°C
-40°C
3.366
3.366
3.333
VOUT (V)
VOUT (V)
3.333
+125°C
+85°C
+25°C
0°C
-40°C
3.3
3.267
3.3
3.267
3.234
3.234
NOTE: Y axis shows 1% VOUT per division
NOTE: Y axis shows 1% VOUT per division
3.201
3.201
0
100 200 300 400 500 600 700 800 900 1000
IOUT (mA)
0
0.824
+125°C
+85°C
+25°C
0°C
-40°C
20
25
VOUT = 0.8V
IOUT = 5mA
0.816
+125°C
+85°C
+25°C
0°C
-40°C
0.808
VOUT (V)
VOUT (V)
0.818
0.8
0.792
0.8
0.792
0.784
0.784
NOTE: Y axis shows 1% VOUT per division
NOTE: Y axis shows 1% VOUT per division
0.776
0.776
2.2
2.6
3
3.4
3.8
4.2 4.6
VIN (V)
5
5.4
5.8
6.2
2.2
6.6
Figure 3. Line Regulation
500
2.6
3
3.4
3.8
4.2 4.6
VIN (V)
5
5.4
5.8
6.2
6.6
Figure 4. Line Regulation Under Light Loads
500
IOUT = 1A
450
+125°C
+85°C
+25°C
0°C
-40°C
400
350
300
250
200
IOUT = 750mA
450
+125°C
+85°C
+25°C
0°C
-40°C
400
350
VDO (V)
VDO (V)
15
Figure 2. Load Regulation Under Light Loads
VOUT = 0.8V
IOUT = 750mA
0.816
10
IOUT (mA)
Figure 1. Load Regulation
0.824
5
300
250
200
150
150
100
100
50
50
0
0
2
2.5
3
3.5
4
4.5
VIN (V)
5
5.5
6
Figure 5. Dropout Voltage vs Input Voltage
6.5
2
2.5
3
3.5
4
4.5
VIN (V)
5
5.5
6
6.5
Figure 6. Dropout Voltage vs Input Voltage
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Typical Characteristics (continued)
At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF,
COUT = 4.7 μF, and CNR = 0.01 μF, all temperature values refer to TJ (unless otherwise noted).
500
500
IOUT = 500mA
450
+125°C
+85°C
+25°C
0°C
-40°C
400
300
250
200
350
300
250
200
150
150
100
100
50
50
0
0
2
2.5
3
3.5
4
4.5
VIN (V)
5
5.5
6
6.5
0
100 200 300 400 500 600 700 800 900 1000
IOUT (mA)
Figure 8. Dropout Voltage vs Load Current
Figure 7. Dropout Voltage vs Input Voltage
500
300
VIN = 3.6V
450
IOUT = 1000mA
IOUT = 750mA
IOUT = 5mA
400
250
200
300
IGND (mA)
VDO (V)
350
250
200
150
100
50
50
0
0
-40 -25 -10
5
20 35 50 65
Temperature (°C)
80
95
VOUT = 0.8V
IOUT = 750mA
2.2
110 125
Figure 9. Dropout Voltage vs Temperature
2.6
3
3.4
3.8
4.2 4.6
VIN (V)
5
5.4
5.8
6.2
6.6
Figure 10. Ground Pin Current vs Input Voltage
2
300
VIN = 2.2V
VIN = 2.5V
VIN = 3V
VIN = 3.3V
1.8
250
1.6
1.4
ISHDN (mA)
200
IGND (mA)
+125°C
+85°C
+25°C
0°C
-40°C
100
150
150
+125°C
+85°C
+25°C
0°C
-40°C
100
50
VIN = 5V
VIN = 5.5V
VIN = 6V
VIN = 6.6V
1.2
1
0.8
0.6
0.4
0.2
VEN = 0.4V
0
0
0
100 200 300 400 500 600 700 800 900 1000
IOUT (mA)
Figure 11. Ground Pin Current vs Load Current
8
+125°C
+85°C
+25°C
0°C
-40°C
400
VDO (V)
VDO (V)
350
VIN = 3.6V
450
-40 -25 -10
5
20 35 50 65
Temperature (°C)
80
95
110 125
Figure 12. Shutdown Current vs Temperature
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Typical Characteristics (continued)
At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF,
COUT = 4.7 μF, and CNR = 0.01 μF, all temperature values refer to TJ (unless otherwise noted).
1800
90
1600
80
1400
70
PSRR (dB)
ICL (mA)
1200
1000
800
600
VIN = 2.2V
VIN = 3.8V
VIN = 5.5V
VIN = 6.5V
400
200
VOUT = VIN - 0.5V
0
50
40
30
IOUT = 100mA
No CIN
20
5
20 35 50 65
Temperature (°C)
80
95
110 125
10
Figure 13. Current Limit vs Temperature
90
80
80
70
70
60
60
50
40
IOUT = 10mA
IOUT = 100mA
IOUT = 750mA
IOUT = 1A
30
20
10
100
VDO = 1.0V
No CIN
1k
10k
100k
Frequency (Hz)
1M
1k
10k
100k
Frequency (Hz)
1M
10M
VDO = 0.5V
No CIN
50
40
IOUT = 10mA
IOUT = 100mA
IOUT = 750mA
IOUT = 1A
30
10
100
Figure 14. Power-Supply Ripple Rejection vs Frequency
90
PSRR (dB)
PSRR (dB)
60
10
-40 -25 -10
20
10
10M
10
100
1k
10k
100k
Frequency (Hz)
1M
10M
Figure 15. Power-Supply Ripple Rejection vs Frequency
Figure 16. Power-Supply Ripple Rejection vs Frequency
90
90
80
80
70
70
60
60
PSRR (dB)
PSRR (dB)
VDO = 1.0V
VDO = 0.5V
VDO = 0.3V
50
40
IOUT = 10mA
IOUT = 100mA
IOUT = 750mA
IOUT = 1A
30
20
VDO = 1.0V
COUT = 100mF
No CIN
10
10
100
1k
10k
100k
Frequency (Hz)
1M
10M
Figure 17. Power-Supply Ripple Rejection vs Frequency
50
40
IOUT = 10mA
IOUT = 100mA
IOUT = 750mA
IOUT = 1A
30
20
VDO = 0.5V
COUT = 100mF
No CIN
10
10
100
1k
10k
100k
Frequency (Hz)
1M
10M
Figure 18. Power-Supply Ripple Rejection vs Frequency
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Typical Characteristics (continued)
At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF,
COUT = 4.7 μF, and CNR = 0.01 μF, all temperature values refer to TJ (unless otherwise noted).
90
80
70
70
60
60
50
40
f = 1kHz
f = 10kHz
f = 100kHz
f = 1MHz
30
20
IOUT = 750mA
No CIN
80
PSRR (dB)
PSRR (dB)
90
IOUT = 100mA
No CIN
50
40
f = 1kHz
f = 10kHz
f = 100kHz
f = 1MHz
30
20
10
10
0
0.5
1
1.5
2
VDO (V)
2.5
3
0
3.5
0.5
100
RMS Noise (100Hz to 100kHz)
47.95mVRMS (COUT = 4.7mF)
47.33mVRMS (COUT = 22mF)
47.42mVRMS (COUT = 47mF)
VDO = 0.5V
IOUT = 100mA
10
1
0.1
COUT = 4.7mF
COUT = 22mF
COUT = 47mF
0.01
10
100
1k
Frequency (Hz)
10k
100k
100
10
IOUT = 10mA
IOUT = 100mA
IOUT = 750mA
0.1
CNR = 1nF
CNR = 10nF
CNR = 100nF
0.01
100
1k
Frequency (Hz)
10k
100k
1000
RLOAD = 1kW
100
10
1
0.1
0.01
10
100
1k
Frequency (Hz)
10k
100k
1
10
100
1000
CNR (nF)
Figure 23. Output Spectral Noise Density
vs Frequency
10
3.5
1
10
EN to 90% VOUT (ms)
Output Spectral Noise Density (mV/ÖHz)
1
0.1
3
Figure 22. Output Spectral Noise Density
vs Frequency
RMS Noise (100Hz to 100kHz)
92.07mVRMS (IOUT = 10mA)
47.95mVRMS (IOUT = 100mA)
46.87mVRMS (IOUT = 750mA)
VDO = 0.5V
10
2.5
RMS Noise (100Hz to 100kHz)
48.14mVRMS (CNR = 1nF)
47.33mVRMS (CNR = 10nF)
45.90mVRMS (CNR = 100nF)
VDO = 0.5V
IOUT = 100mA
Figure 21. Output Spectral Noise Density
vs Frequency
100
1.5
2
VDO (V)
Figure 20. Power-Supply Ripple Rejection
vs Dropout Voltage
Output Spectral Noise Density (mV/ÖHz)
Output Spectral Noise Density (mV/ÖHz)
Figure 19. Power-Supply Ripple Rejection
vs Dropout Voltage
1
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Figure 24. Start-Up Time
vs Noise Reduction Capacitance
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Typical Characteristics (continued)
At VOUT(TYP) = 3.3 V, VIN = VOUT(TYP) + 0.5 V or 2.2 V (whichever is greater), IOUT = 100 mA, VEN = VIN, CIN = 1 μF,
COUT = 4.7 μF, and CNR = 0.01 μF, all temperature values refer to TJ (unless otherwise noted).
7
5.5
3.30825
VIN = 3.8V ® 4.8V ® 3.8V (1V/div)
3.3
3.29175
4.5
3.27525
3.5
IOUT = 500mA
VOUT
3.35
50ms/div
2
IOUT = 100mA ® 1A ® 100mA (1A/ms)
3.25
0.5
3.15
0
50ms/div
3.5
5
EN
VIN, VOUT (V)
VEN, VOUT (V)
RLOAD = 33W
6
3
2.5
Figure 26. Load Transient Response
7
RLOAD = 33W
4
1.5
1
3.2
Figure 25. Line Transient Response
4.5
2.5
3.3
3.15
3.267
3
3.7
IOUT (A)
3.2835
4
VIN (for reference)
3.75
VIN, VOUT (V)
3.3165
VOUT (V), 0.25% of 3.3V/div
VOUT
5
3.8
3.32475
6
VIN (V), 0.5V/div
3.85
3.333
6.5
OUT
2
1.5
1
VIN = VEN
4
VOUT
3
2
1
0.5
0
0
-1
-0.5
1ms/div
1ms/div
The internal reference requires approximately 2 ms of rampup
time (see Start-Up); therefore, VOUT fully reaches the target output
voltage of 3.3 V in 2 ms from start-up.
Figure 27. Enable Pulse Response
Figure 28. Power-Up and Power-Down Response
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7 Detailed Description
7.1 Overview
The TPS7A80 devices belong to a family of new-generation LDO regulators that uses innovative circuitry to
achieve wide bandwidth and high loop gain, resulting in extremely high PSRR (over a 1-MHz range), even with
very low headroom (VIN – VOUT). A noise-reduction capacitor (CNR) at the NR pin and a bypass capacitor
(CBYPASS) decrease noise generated by the band-gap reference to improve PSRR, while a quick-start circuit
fastcharges the noise-reduction capacitor. This family of regulators offers sub-band-gap output voltages, current
limit, and thermal protection, and is fully specified from –40°C to +125°C.
7.2 Functional Block Diagram
OUT
IN
Current
Limit
EN
Thermal
Shutdown
UVLO
1.20V
Bandgap
33kW
FB
Quick-Start
NR
33kW
225kW
0.8V
15pF
Adjustable
58.7kW
TPS7A8001
GND
Figure 29. Adjustable Voltage Version
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Functional Block Diagram (continued)
OUT
IN
SNS
Current
Limit
EN
Thermal
Shutdown
2.5mA
UVLO
1.20V
Bandgap
VOUT > 1.6V
Quick-Start
33kW
NR
33kW
225kW
0.8V
15pF
VOUT £ 1.6V
58.7kW
TPS7A80xx
GND
Figure 30. Fixed Voltage Versions
7.3 Feature Description
7.3.1 Internal Current Limit
The TPS7A80 internal current limit helps protect the regulator during fault conditions. During current limit, the
output sources a fixed amount of current that is largely independent of output voltage. For reliable operation, do
not operate these devices in a current limit state for extended periods of time.
The PMOS pass element in the TPS7A80 has a built-in body diode that conducts current when the voltage at
OUT exceeds the voltage at IN. This current is not limited, so if extended reverse voltage operation is
anticipated, external limiting is required.
7.3.2 Shutdown
The enable pin (EN) is active high and is compatible with standard and low voltage, TTL-CMOS levels. When
shutdown capability is not required, EN can be connected to IN.
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Feature Description (continued)
7.3.3 Start-Up
Through a lower resistance, the band-gap reference can quickly charge the noise reduction capacitor (CNR). The
TPS7A80 have a quick-start circuit to quickly charge CNR, if present; see the Functional Block Diagram. At startup, this quick-start switch is closed, with only 33 kΩ of resistance between the band-gap reference and the NR
pin. The quick-start switch opens approximately 2ms after any device enabling event, and the resistance
between the band-gap reference and the NR pin becomes higher in value (approximately 250 kΩ) to form a very
good low-pass (RC) filter. This low-pass filter achieves very good noise reduction for the reference voltage.
Inrush current can be a problem in many applications. The 33-kΩ resistance during the start-up period is
intentionally put there to slow down the reference voltage ramp up, thus reducing the inrush current. For
example, the capacitance of connecting the recommended CNR value of 0.01 μF along with the 33-kΩ resistance
causes approximately 1-ms RC delay. Start-up time with the other CNR values can be calculated as Equation 1:
tSTR (s) = 76,000 x CNR (F)
(1)
Equation 1 is valid up to tSTR = 2 ms or CNR = 26 nF, whichever is smaller.
Although the noise reduction effect is nearly saturated at 0.01 μF, connecting a CNR value greater than 0.01 μF
can help reduce noise slightly more; however, start-up time will be extremely long because the quick-start switch
opens after approximately 2 ms. That is, if CNR is not fully charged during this 2 ms period, CNR finishes charging
through a higher resistance of 250 kΩ, and takes much longer to fully charge.
A low leakage CNR should be used; most ceramic capacitors are suitable.
7.3.4 Undervoltage Lockout (UVLO)
The TPS7A80 use an undervoltage lockout circuit to keep the output shut off until the internal circuitry is
operating properly. The UVLO circuit has a deglitch feature so that it typically ignores undershoot transients on
the input if they are less than 50-μs duration.
7.4 Device Functional Modes
Driving the EN pin over 1.2 V for VIN from 2.2 V to 3.6 V or 1.35 V for VIN from 3.6 V to 6.5 V turns on the
regulator. Driving the EN pin below 0.4 V causes the regulator to enter shutdown mode.
In shutdown, the current consumption of the device is reduced to 0.02 µA, typically.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS7A80 devices belong to a family of new generation LDO regulators that use innovative circuitry to
achieve wide bandwidth and high loop gain, resulting in extremely high PSRR (over a 1-MHz range) at very low
headroom (VIN – VOUT). A noise reduction capacitor (CNR) at the NR pin bypasses noise generated by the bandgap reference to improve PSRR, while a quick-start circuit fast-charges this capacitor. This family of regulators
offers sub-band-gap output voltages, current limit, and thermal protection, and is fully specified from –40°C to
125°C.
Figure 31 gives the connections for the adjustable-output version (TPS7A8001). Figure 32 shows the
connections for the fixed-voltage versions.
8.2 Typical Application
Optional 1.0mF input capacitor.
May improve source impedance,
noise, or PSRR.
VIN
IN
VOUT
OUT
R1
TPS7A8001
EN
4.7mF
Ceramic
FB
GND
NR
R2
VEN
To avoid inrush current,
it is recommended to
always connect a
1nF to 10nF capacitor
Figure 31. Typical Application Circuit:
Adjustable-Voltage Version
Optional 1.0mF input capacitor.
May improve source impedance,
noise, or PSRR.
VIN
IN
VOUT
OUT
TPS7A80xx SNS
EN
VEN
GND
NR
4.7mF
Ceramic
To avoid inrush current,
it is recommended to
always connect a
1nF to 10nF capacitor
Figure 32. Typical Application Circuit:
Fixed-Voltage Versions
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Typical Application (continued)
8.2.1 Design Requirements
8.2.1.1 Dropout Voltage
The TPS7A80 use a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout
voltage (VDO), the PMOS pass device is in its linear region of operation and the input-to-output resistance is the
RDS(ON) of the PMOS pass element. VDO scales approximately with output current because the PMOS device in
dropout behaves the same way as a resistor.
As with any linear regulator, PSRR and transient response are degraded as (VIN – VOUT) approaches dropout.
This effect is shown in Figure 19 and Figure 20 in the Typical Characteristics section.
8.2.1.2 Minimum Load
The TPS7A80 are stable and well-behaved with no output load. Traditional PMOS LDO regulators suffer from
lower loop gain at very light output loads. The TPS7A80 employ an innovative low-current mode circuit to
increase loop gain under very light or no-load conditions, resulting in improved output voltage regulation
performance down to zero output current.
8.2.1.3 Input and Output Capacitor Requirements
Although an input capacitor is not required for stability, it is good analog design practice to connect a 0.1-μF to 1μF low equivalent series resistance (ESR) capacitor across the input supply near the regulator. This capacitor
counteracts reactive input sources and improves transient response, noise rejection, and ripple rejection. A
higher-value capacitor may be necessary if large, fast rise-time load transients are anticipated or if the device is
located several inches from the power source. If source impedance is not sufficiently low, a 0.1-μF input
capacitor may be necessary to provide stability.
The TPS7A80 are designed to be stable with standard ceramic capacitors of capacitance values 4.7 μF or larger.
These devices is evaluated using a 4.7-μF ceramic capacitor of 10-V rating, 10% tolerance, X5R type, and 0805
size (2 mm × 1.25 mm).
X5R- and X7R-type capacitors are highly recommended because they have minimal variation in value and ESR
over temperature. Maximum ESR should be < 1 Ω.
The TPS7A80 implement an innovative internal compensation circuit that does not require a feedback capacitor
across R2 for stability. Do not use a feedback capacitor for this device.
8.2.1.4 Transient Response
As with any regulator, increasing the size of the output capacitor reduces over- and undershoot magnitude, but
increases duration of the transient response.
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Typical Application (continued)
8.2.2 Detailed Design Procedure
The voltage on the FB pin sets the output voltage and is determined by the values of R1 and R2. The values of
R1 and R2 can be calculated for any voltage using the formula given in Equation 2:
(R + R2 )
VOUT = 1
x 0.800
R2
(2)
Sample resistor values for common output voltages are shown in Table 1. In Table 1, E96 series resistors are
used, and all values meet 1% of the target VOUT, assuming resistors with zero error. For the actual design, pay
attention to any resistor error factors. Using lower values for R1 and R2 reduces the noise injected from the FB
pin.
Table 1. Sample 1% Resistor Values for Common Output Voltages
VOUT
R1
R2
0.8 V
0 Ω (Short)
Do not populate
1V
2.49 kΩ
10 kΩ
1.2 V
4.99 kΩ
10 kΩ
1.5 V
8.87 kΩ
10 kΩ
1.8 V
12.5 kΩ
10 kΩ
2.5 V
21 kΩ
10 kΩ
3.3 V
30.9 kΩ
10 kΩ
5V
52.3 kΩ
10 kΩ
8.2.2.1 Output Noise
In most LDOs, the band gap is the dominant noise source. If a noise reduction capacitor (CNR) is used with the
TPS7A80, the band gap does not contribute significantly to noise. Instead, noise is dominated by the output
resistor divider and the error amplifier input. To minimize noise in a given application, use a 0.01-μF (minimum)
noise-reduction capacitor.
Equation 3 approximates the total noise when CNR = 0.01 μF:
VN = 14.6 × VOUT + (µVRMS)
(3)
8.2.3 Application Curve
7
RLOAD = 33W
6
VIN, VOUT (V)
5
4
VIN = VEN
VOUT
3
2
1
0
-1
1ms/div
Figure 33. Power-Up and Power-Down Response
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9 Power Supply Recommendations
These devices are designed to operate with an input voltage supply range from 2.2 V to 6.5 V. The input voltage
range should provide adequate headroom for the device to have a regulated output. Use a well-regulated input
supply. If the input supply is noisy, additional input capacitors with low ESR can help improve the output noise
performance.
10 Layout
10.1 Layout Guidelines
10.1.1 Board Layout Recommendations to Improve PSRR and Noise Performance
To improve ac performance such as PSRR, output noise, and transient response, TI recommends designing the
board with separate ground planes for VIN and VOUT, with each ground plane connected only at the GND pin of
the device. In addition, the ground connection for the bypass capacitor should connect directly to the GND pin of
the device.
10.1.2 Thermal Considerations
Thermal protection disables the output when the junction temperature rises to approximately 160°C, allowing the
device to cool. When the junction temperature cools to approximately 140°C the output circuitry is again enabled.
Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may
cycle on and off. This cycling limits the dissipation of the regulator, protecting it from damage because of
overheating.
Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate
heatsink. For reliable operation, junction temperature should be limited to 125°C maximum. To estimate the
margin of safety in a complete design (including heatsink), increase the ambient temperature until the thermal
protection is triggered; use worst-case loads and signal conditions. For good reliability, thermal protection should
trigger at least 35°C above the maximum expected ambient condition of your particular application. This
configuration produces a worst-case junction temperature of 125°C at the highest expected ambient temperature
and worst-case load.
The internal protection circuitry of the TPS7A80 has been designed to protect against overload conditions. It was
not intended to replace proper heatsinking. Continuously running the TPS7A80 into thermal shutdown degrades
device reliability.
10.1.3 Power Dissipation
Knowing the device power dissipation and proper sizing of the thermal plane that is connected to the tab or pad
is critical to avoiding thermal shutdown and ensuring reliable operation.
Power dissipation of the device depends on input voltage and load conditions and can be calculated using
Equation 4:
PD
VIN VOUT u IOUT
(4)
Power dissipation can be minimized and greater efficiency can be achieved by using the lowest possible input
voltage necessary to achieve the required output voltage regulation.
On the VSON (DRB) package, the primary conduction path for heat is through the exposed pad to the printedcircuit-board (PCB). The pad can be connected to ground or be left floating; however, it should be attached to an
appropriate amount of copper PCB area to make sure the device does not overheat. The maximum junction-toambient thermal resistance depends on the maximum ambient temperature, maximum device junction
temperature, and power dissipation of the device and is calculated using Equation 5:
125qC TA
RTJA
PD
(5)
Knowing the maximum RθJA, the minimum amount of PCB copper area needed for appropriate heatsinking is
estimated using Figure 34.
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Layout Guidelines (continued)
160
140
qJA (°C/W)
120
100
80
60
40
20
0
0
1
2
4
5
7
3
6
Board Copper Area (in2)
8
9
10
NOTE: θJA value at board size of 9 in2 (that is, 3 inches × 3 inches) is a JEDEC standard.
Figure 34. RθJA vs Board Size
Figure 34 shows the variation of θJA as a function of ground plane copper area in the board. It is intended only as
a guideline to demonstrate the effects of heat spreading in the ground plane and should not be used to estimate
actual thermal performance in real application environments.
NOTE
When the device is mounted on an application PCB, it is strongly recommended to use
ΨJT and ΨJB, as explained in the section.
10.1.4 Estimating Junction Temperature
Using the thermal metrics ΨJT and ΨJB, as shown in the Thermal Information table, the junction temperature can
be estimated with corresponding formulas (given in Equation 6). For backwards compatibility, an older θJC,Top
parameter is listed as well.
YJT: TJ = TT + YJT · PD
YJB: TJ = TB + YJB · PD
(6)
Where PD is the power dissipation shown by Equation 5, TT is the temperature at the center-top of the IC
package, and TB is the PCB temperature measured 1 mm away from the IC package on the PCB surface (as
Figure 36 shows).
NOTE
Both TT and TB can be measured on actual application boards using a thermo gun (an
infrared thermometer).
For more information about measuring TT and TB, see Using New Thermal Metrics.
By looking at Figure 35, the new thermal metrics (ΨJT and ΨJB) have very little dependency onboard size. That is,
using ΨJT or ΨJB with Equation 6 is a good way to estimate TJ by simply measuring TT or TB, regardless of the
application board size.
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Layout Guidelines (continued)
20
18
YJB
YJT and YJB (°C/W)
16
14
12
10
8
6
YJT
4
2
0
0
1
2
3
4
5
6
7
8
9
10
Board Copper Area (in2)
Figure 35. ΨJT and ΨJB vs Board Size
For a more detailed discussion of why TI does not recommend using θJC(top) to determine thermal characteristics,
see Using New Thermal Metrics. For further information, see Semiconductor and IC Package Thermal Metrics.
TT on top
of IC surface
TB
TB on PCB
TT
1mm
1mm
Figure 36. Measuring Points for TT and TB
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10.2 Layout Example
GND
R2
C(NR)
R1
C(IN)
VI
C(OUT)
GND
C(BYPASS)
VO
Figure 37. Layout Example
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
TPS7A80xxDRBEVM User's Guide
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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28-Sep-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS7A8001DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OFU
TPS7A8001DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OFU
TPS7A8012DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G1H
TPS7A8012DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G1H
TPS7A8018DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G2H
TPS7A8018DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G2H
TPS7A8033DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G3H
TPS7A8033DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G3H
TPS7A8050DRBR
ACTIVE
SON
DRB
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G4H
TPS7A8050DRBT
ACTIVE
SON
DRB
8
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1G4H
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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