TRF370417IRGET

Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 TRF370417 50-MHz to 6-GHz Quadrature Modulator 1 Features 3 Description • The TRF370417 is a low-noise direct quadrature modulator, capable of converting complex modulated signals from baseband or IF directly up to RF. The TRF370417 is a high-performance, superior-linearity device that operates at RF frequencies of 50 MHz through 6 GHz. The modulator is implemented as a double-balanced mixer. The RF output block consists of a differential to single-ended converter and an RF amplifier capable of driving a single-ended 50-Ω load without any need of external components. The TRF370417 requires a 1.7-V common-mode voltage for optimum linearity performance. TRF370417 BODY SIZE (NOM) VQFN(24) 4.00 mm × 4.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. BBIN BBIP GND GND 21 20 19 Block Diagram 22 Cellular Base Station Transceiver CDMA: IS95, UMTS, CDMA2000, TD-SCDMA TDMA: GSM, IS-136, EDGE/UWC-136 Multicarrier GSM WiMAX: 802.16d/e 3GPP: LTE Point-to-Point (P2P) Microwave Wideband Software-Defined Radio Public Safety: TETRA/APC025 Communication-System Testers Cable Modem Termination System (CMTS) PACKAGE GND • • • • • • • • • • • PART NUMBER 23 2 Applications Device Information(1) VCC • • • • • • • • 76-dBc Single-Carrier WCDMA ACPR at –8 dBm Channel Power Low Noise Floor: –162.3 dBm/Hz at 2140 MHz OIP3 of 26.5 dBm at 2140 MHz P1dB of 12 dBm at 2140 MHz Carrier Feedthrough of –38 dBm at 2140 MHz Side-Band Suppression of –50 dBc at 2140 MHz Single Supply: 4.5-V–5.5-V Operation Silicon Germanium Technology 1.7-V CM at I, Q Baseband Inputs 24 1 NC 1 18 VCC GND 2 17 GND LOP 3 16 RF_OUT S 0/90 12 NC GND 13 11 6 GND NC 10 GND BBQP 14 9 5 BBQN GND 8 NC GND 15 7 4 NC LON B0175-01 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 4 5 5 8 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... RF Output Parameters .............................................. Typical Characteristics .............................................. Detailed Description ............................................ 16 7.1 Overview ................................................................. 16 7.2 Functional Block Diagram ....................................... 16 7.3 Feature Description................................................. 16 7.4 Device Functional Modes........................................ 16 8 Application and Implementation ........................ 18 8.1 Application Information............................................ 18 8.2 Typical Application ................................................. 20 9 Power Supply Recommendations...................... 23 10 Layout................................................................... 23 10.1 Layout Guidelines ................................................. 23 10.2 Layout Example .................................................... 23 11 Device and Documentation Support ................. 25 11.1 11.2 11.3 11.4 11.5 11.6 Device Support...................................................... Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 25 26 26 26 26 26 12 Mechanical, Packaging, and Orderable Information ........................................................... 26 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Original (January 2010) to Revision A • 2 Page Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 5 Pin Configuration and Functions VCC GND BBIN BBIP GND GND 24 23 22 21 20 19 RGE Package 24-Pin VQFN With Exposed Thermal Pad Top View LON 4 15 NC GND 5 14 GND NC 6 13 NC 12 RF_OUT GND 16 11 3 GND LOP 10 GND BBQP 17 9 2 BBQN GND 8 VCC GND 18 7 1 NC NC Pin Functions PIN NAME NO. I/O DESCRIPTION BBIN 22 I In-phase negative input BBIP 21 I In-phase positive input BBQN 9 I Quadrature-phase negative input BBQP 10 I Quadrature-phase positive input GND 2, 5, 8, 11, 12, 14, 17, 19, 20, 23 — LON 4 I Local oscillator (LO) negative input LOP 3 I Local oscillator (LO) positive input NC 1, 6, 7, 13, 15 — No connect 16 O RF output 18, 24 — Power supply RF_OUT VCC Ground Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 3 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage range –0.3 6 V TJ Operating virtual junction temperature range –40 150 °C TA Operating ambient temperature range –40 85 °C Tstg Storage temperature range –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±75 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±75 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) VCC Power-supply voltage MIN NOM MAX 4.5 5 5.5 UNIT V 6.4 Thermal Information TRF370417 THERMAL METRIC (1) RGE (VQFN) UNIT 24 PINS RθJA Junction-to-ambient thermal resistance (High-K board, still air) 29.4 °C/W RθJC(top) Junction-to-case (top) thermal resistance 18.6 °C/W RθJB Junction-to-board thermal resistance 14 °C/W ψJT Junction-to-top characterization parameter — °C/W ψJB Junction-to-board characterization parameter — °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 6.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 205 245 mA 6 GHz 12 dBm DC Parameters ICC Total supply current (1.7 V CM) TA = 25°C LO Input (50-Ω, Single-Ended) LO frequency range fLO 0.05 LO input power –5 LO port return loss 0 15 dB Baseband Inputs VCM I and Q input dc common voltage BW 1-dB input frequency bandwidth 1 GHz Input impedance, resistance 5 kΩ Input impedance, parallel capacitance 3 pF ZI(single ended) 1.7 6.6 RF Output Parameters over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT fLO = 70 MHz at 8 dBm G Voltage gain P1dB Output compression point Output rms voltage over input I (or Q) rms voltage IP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone IP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone Carrier feedthrough Unadjusted Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –8 dB 7.3 dBm 22 dBm 69 dBm –46 dBm –27.5 dBc fLO = 400 MHz at 8 dBm G Voltage gain P1dB Output compression point Output rms voltage over input I (or Q) rms voltage –1.9 dB IP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone IP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone Carrier feedthrough Unadjusted Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –40 dBc Output rms voltage over input I (or Q) rms voltage –2.5 11 dBm 24.5 dBm 68 dBm –38 dBm fLO = 945.6 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone IP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone Carrier feedthrough Unadjusted Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –42 dBc Output return loss Output noise floor dB 11 dBm 25 dBm 65 dBm –40 dBm 9 ≥13 MHz offset from fLO; Pout = –5 dBm –161.2 dB dBm/Hz fLO = 1800 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 IP2 Output IP2 Carrier feedthrough Sideband suppression Output rms voltage over input I (or Q) rms voltage –2.5 dB 12 dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 26 dBm fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 60 dBm Unadjusted –40 dBm Unadjusted; fBB = 4.5, 5.5 MHz –50 dBc Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 5 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com RF Output Parameters (continued) over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN Output return loss Output noise floor TYP 8 ≥13 MHz offset from fLO; Pout = –5 dBm –161.5 MAX UNIT dB dBm/Hz fLO = 1960 MHz at 8 dBm G Voltage gain Output rms voltage over input I (or Q) rms voltage –2.5 P1dB Output compression point IP3 IP2 12 dBm Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 26.5 dBm Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone 60 dBm Carrier feedthrough Unadjusted –38 dBm Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –50 dBc Output return loss EVM 8 Output noise floor ≥13 MHz offset from fLO; Pout = –5 dBm Error vector magnitude (rms) 1 EDGE signal, Pout = –5 dBm (1) –162 ACPR Alternate-channel power ratio dB dBm/Hz 0.43% 1 WCDMA signal; Pout = –8 dBm (2) Adjacent-channel power ratio dB –76 1 WCDMA signal; Pout = –8 dBm (3) –74 (3) –68 4 WCDMA signals; Pout = –14 dBm per carrier (3) –67 1 WCDMA signal; Pout = –8 dBm (2) –80 2 WCDMA signals; Pout = –11 dBm per carrier 1 WCDMA signal; Pout = –8 dBm (3) –78 (3) –72 4 WCDMA signals; Pout = –14 dBm per carrier (3) –69 Output rms voltage over input I (or Q) rms voltage –2.4 2 WCDMA signals; Pout = –11 dBm per carrier dBc dBc fLO = 2140 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone IP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone Carrier feedthrough Unadjusted Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –50 dBc 8.5 dB Output return loss Output noise floor ≥13 MHz offset from fLO ; Pout = –5 dBm Adjacent-channel power ratio ACPR Alternate-channel power ratio (1) (2) (3) 6 26.5 dBm 66 dBm –38 dBm –72 (3) –67 4 WCDMA signals; Pout = –14 dBm per carrier (3) –66 1 WCDMA signal; Pout = –8 dBm (2) –80 (3) –78 1 WCDMA signal; Pout = –8 dBm dBm/Hz –76 1 WCDMA signal; Pout = –8 dBm (3) 2 WCDMA signal; Pout = –11 dBm per carrier dBm –162.3 1 WCDMA signal; Pout = –8 dBm (2) dB 12 2 WCDMA signal; Pout = –11 dBm (3) –74 4 WCDMA signals; Pout = –14 dBm per carrier (3) –68 dBc dBc The contribution from the source of about 0.28% is not de-embedded from the measurement. Measured with DAC5687 as source generator; with 2.5 MHz LPF. Measured with DAC5687 as source generator; no external BB filters are used. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 RF Output Parameters (continued) over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended in quadrature, fBB = 50 kHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT fLO = 2500 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone IP2 Output IP2 fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone Carrier feedthrough Unadjusted Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –47 dBc WiMAX 5-MHz carrier, Pout = –8 dBm (4) –47 dB –45 dB 0.6 dB EVM Error vector magnitude (rms) Output rms voltage over input I (or Q) rms voltage WiMAX 5-MHz carrier, Pout = 0 dBm –1.6 (4) dB 13 dBm 29 dBm 65 dBm –37 dBm fLO = 3500 MHz at 8 dBm G Voltage gain P1dB Output compression point 13.5 dBm IP3 Output IP3 fBB = 4.5, 5.5 MHz 25 dBm IP2 Output IP2 fBB = 4.5, 5.5 MHz 65 dBm Carrier feedthrough Unadjusted –35 dBm Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –36 dBc WiMAX 5-MHz carrier, Pout = –8 dBm (4) –47 dB WiMAX 5-MHz carrier, Pout = 0 dBm (4) –43 dB Output rms voltage over input I (or Q) rms voltage 0.2 dB 12 dBm EVM Error vector magnitude (rms) Output rms voltage over input I (or Q) rms voltage fLO = 4000 MHz at 8 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 fBB = 4.5, 5.5 MHz 22.5 dBm IP2 Output IP2 fBB = 4.5, 5.5 MHz 60 dBm Carrier feedthrough Unadjusted –36 dBm Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –36 dBc Output rms voltage over input I (or Q) rms voltage –5.5 dB 12.9 dBm fLO = 5800 MHz at 4 dBm G Voltage gain P1dB Output compression point IP3 Output IP3 fBB = 4.5, 5.5 MHz 25 dBm IP2 Output IP2 fBB = 4.5, 5.5 MHz 55 dBm Carrier feedthrough Unadjusted –31 dBm Sideband suppression Unadjusted; fBB = 4.5, 5.5 MHz –36 dBc Error-vector magnitude WiMAX 5-MHz carrier, Pout = –12 dBm (4) –40 dB EVM (4) Sideband suppression optimized with LO drive level; EVM contribution from instrument is not accounted for. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 7 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com 6.7 Typical Characteristics 15 2 10 0 POUT − Output Power − dBm POUT − Output Power at 2.14 GHz − dBm VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). 5 0 −5 −10 −2 −4 25°C −6 85°C −8 VIN = 98 mVrms SE LO = 4 dBm VCC = 5 V −10 −15 −12 −20 0.01 0.1 0 1 VBB − Baseband Voltage Single-Ended RMS − V 1000 2000 3000 4000 5000 6000 f − Frequency − MHz G002 G001 Figure 1. Output Power vs Baseband Voltage Figure 2. Output Power vs Frequency and Temperature 2 2 5.5 V −2 5V −4 4.5 V −6 −8 VIN = 98 mVrms SE LO = 4 dBm TA = 25°C −10 0 dBm 0 POUT − Output Power − dBm 0 POUT − Output Power − dBm –40°C –5 dBm −2 4 dBm −4 −6 −8 −10 −12 VIN = 98 mVrms SE VCC = 5 V TA = 25°C 8 dBm −12 0 1000 2000 3000 4000 5000 6000 0 1000 2000 f − Frequency − MHz 3000 4000 5000 6000 f − Frequency − MHz G003 Figure 3. Output Power vs Frequency and Supply Voltage G004 Figure 4. Output Power vs Frequency and LO Power 20 20 LO = 4 dBm VCC = 5 V 25°C 16 16 14 14 12 10 85°C 5.5 V 12 10 5V 4.5 V –40°C 8 8 6 6 4 4 0 1000 2000 3000 4000 5000 6000 0 f − Frequency − MHz 1000 2000 3000 4000 5000 6000 f − Frequency − MHz G005 Figure 5. P1dB vs Frequency and Temperature 8 LO = 4 dBm TA = 25°C 18 P1dB − dBm P1dB − dBm 18 G006 Figure 6. P1dB vs Frequency and Supply Voltage Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 Typical Characteristics (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). 20 40 25°C 18 –5 dBm –40°C 35 16 0 dBm 30 12 OIP3 − dBm P1dB − dBm 14 4 dBm 10 8 dBm 8 25 20 85°C 15 6 10 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V 4 5 VCC = 5 V TA = 25°C 2 0 0 0 1000 2000 3000 4000 5000 6000 0 1000 2000 f − Frequency − MHz G007 4000 5000 6000 G008 Figure 7. P1dB vs Frequency and LO Power Figure 8. OIP3 vs Frequency and Temperature 40 100 5V 90 35 80 OIP2 − dBm 30 OIP3 − dBm 3000 f − Frequency − MHz 25 4.5 V 20 5.5 V 15 10 70 60 85°C 50 40 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm TA = 25°C 25°C –40°C fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V 30 20 5 0 1000 2000 3000 4000 5000 0 6000 1000 2000 3000 4000 5000 6000 f − Frequency − MHz f − Frequency − MHz G009 G011 Figure 9. OIP3 vs Frequency and Supply Voltage Figure 10. OIP2 vs Frequency and Temperature 100 100 90 90 4 dBm 5V 4.5 V 70 60 50 5.5 V 40 70 60 50 –5 dBm 8 dBm 40 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm TA = 25°C 30 0 dBm 80 OIP2 − dBm OIP2 − dBm 80 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone VCC = 5 V TA = 25°C 30 20 20 0 1000 2000 3000 4000 5000 6000 0 f − Frequency − MHz 1000 2000 3000 4000 5000 6000 f − Frequency − MHz G012 Figure 11. OIP2 vs Frequency and Supply Voltage G013 Figure 12. OIP2 vs Frequency and LO POWER Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 9 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com Typical Characteristics (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). 0 LO = 4 dBm VCC = 5 V −10 CS − Unadjusted Carrier Feedthrough − dBm CS − Unadjusted Carrier Feedthrough − dBm 0 –40°C −20 −30 −40 −50 −60 25°C −70 LO = 4 dBm TA = 25°C −10 5V −20 5.5 V −30 −40 −50 −60 4.5 V −70 85°C −80 −80 0 1000 2000 3000 4000 5000 6000 0 1000 2000 3000 4000 5000 6000 f − Frequency − MHz f − Frequency − MHz G015 G014 Figure 13. Unadjusted Carrier Feedthrough vs Frequency and Temperature Figure 14. Unadjusted Carrier Feedthrough vs Frequency and Supply Voltage 0 VCC = 5 V TA = 25°C SS − Unadjusted Sideband Suppression − dBc CS − Unadjusted Carrier Feedthrough − dBm 0 −10 8 dBm −20 –5 dBm −30 −40 −50 4 dBm 0 dBm −10 −20 –40°C −30 25°C −40 −50 −60 −70 85°C LO = 4 dBm VCC = 5 V −80 −60 0 1000 2000 3000 4000 5000 0 6000 1000 2000 3000 4000 5000 6000 f − Frequency − MHz f − Frequency − MHz G016 Figure 15. Unadjusted Carrier Feedthrough vs Frequency and LO Power G017 Figure 16. Unadjusted Sideband Suppression vs Frequency and Temperature 0 SS − Unadjusred Sideband Suppression − dBc SS − Unadjusted Sideband Suppression − dBc 0 −10 −20 4.5 V −30 −40 −50 −60 5V −70 LO = 4 dBm TA = 25°C 5.5 V −10 8 dBm −20 −40 −50 −60 4 dBm −70 VCC = 5 V TA = 25°C 0 dBm −80 −80 0 1000 2000 3000 4000 5000 0 6000 1000 2000 3000 4000 5000 6000 f − Frequency − MHz f − Frequency − MHz G019 G018 Figure 17. Unadjusted Sideband Suppression vs Frequency and Supply Voltage 10 –5 dBm −30 Figure 18. Unadjusted Sideband Suppression vs Frequency and LO Power Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 Typical Characteristics (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). −150 −150 −154 85°C −156 −158 −160 −162 −164 25°C –40°C −166 −154 −156 5.5 V −158 −160 −162 5V −164 4.5 V −166 −168 −168 −170 0.8 POUT = −5 dBm LO = 8 dBm TA = 25°C −152 Noise at 13-MHz Offset − dBm/Hz Noise at 13-MHz Offset − dBm/Hz −152 POUT = −5 dBm LO = 8 dBm VCC = 5 V 1.4 2.0 2.6 3.2 3.8 4.4 5.0 −170 0.8 5.6 1.4 2.0 2.6 3.2 3.8 4.4 5.0 5.6 f − Frequency − GHz f − Frequency − GHz G021 G020 Figure 19. Noise at 13-MHz Offset (dBm/Hz) vs Frequency and Temperature Figure 20. Noise at 13-MHz Offset (dBm/Hz) vs Frequency and Supply Voltage 0 −154 CS − Adjusted Carrier Feedthrough − dBm Noise at 13-MHz Offset − dBm/Hz −156 VCC = 5 V LO = 8 dBm TA = 25°C 5600 MHz −158 948.5 MHz −160 −162 2140 MHz −164 1960 MHz Adj at 70 MHz @ 25°C LO = 4 dBm VCC = 5 V −10 −20 −30 −40 –40°C −50 −60 −70 25°C 1800 MHz 85°C −166 −10 −9 −8 −7 −6 −5 −4 −3 −2 −1 0 −80 1 2 POUT − Output Power − dBm 3 4 60 5 68 70 72 74 76 78 80 G023 0 Adj at 942.6 MHz @ 25°C LO = 4 dBm VCC = 5 V CS − Adjusted Carrier Feedthrough − dBm CS − Adjusted Carrier Feedthrough − dBm 66 Figure 22. Adjusted Carrier Feedthrough vs Frequency and Temperature 0 −20 −30 85°C −40 −50 −60 64 f − Frequency − MHz Figure 21. Noise at 13-MHz Offset (dBm/Hz) vs Output Power −10 62 G022 25°C –40°C −70 −80 900 910 920 930 940 950 960 970 980 990 1000 −10 Adj at 2140 MHz @ 25°C LO = 4 dBm VCC = 5 V −20 –40°C −30 85°C −40 −50 −60 25°C −70 −80 2040 f − Frequency − MHz 2080 2120 2160 2200 2240 f − Frequency − MHz G024 Figure 23. Adjusted Carrier Feedthrough vs Frequency and Temperature G025 Figure 24. Adjusted Carrier Feedthrough vs Frequency and Temperature Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 11 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com Typical Characteristics (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). −10 0 Adj at 2500 MHz @ 25°C LO = 4 dBm VCC = 5 V CS − Adjusted Carrier Feedthrough − dBm CS − Adjusted Carrier Feedthrough − dBm 0 −20 –40°C −30 −40 −50 −60 25°C −70 −10 Adj at 3500 MHz @ 25°C LO = 4 dBm VCC = 5 V −20 –40°C −30 −40 −50 25°C −60 85°C −70 85°C −80 2400 2440 2480 2520 2560 −80 3400 2600 3440 f − Frequency − MHz 3480 3520 3560 3600 f − Frequency − MHz G026 Figure 25. Adjusted Carrier Feedthrough vs Frequency and Temperature G027 Figure 26. Adjusted Carrier Feedthrough vs Frequency and Temperature 0 −10 Adj at 5800 MHz @ 25°C LO = 4 dBm VCC = 5 V SS − Adjusted Sideband Suppression − dBc CS − Adjusted Carrier Feedthrough − dBm 0 −20 –40°C −30 −40 −50 25°C 85°C −60 −70 −80 5700 Adj at 70 MHz @ 25°C LO = 4 dBm VCC = 5 V −10 −20 −30 −40 −50 85°C −60 25°C –40°C −70 −80 5740 5780 5820 5860 60 5900 62 64 66 68 70 72 74 76 78 G029 G028 Figure 27. Adjusted Carrier Feedthrough vs Frequency and Temperature Figure 28. Adjusted Sideband Supression vs Frequency and Temperature 0 Adj at 942.6 MHz @ 25°C LO = 4 dBm VCC = 5 V SS − Adjusted Sideband Suppression − dBc SS − Adjusted Sideband Suppression − dBc 0 −10 −20 −30 25°C –40°C −40 −50 −60 85°C −70 −80 900 910 920 930 940 950 960 970 980 990 1000 −10 Adj at 2140 MHz @ 25°C LO = 4 dBm VCC = 5 V −20 −30 −40 –40°C 85°C −50 −60 25°C −70 −80 2040 2080 2120 2160 2200 2240 f − Frequency − MHz f − Frequency − MHz G031 G030 Figure 29. Adjusted Sideband Supression vs Frequency and Temperature 12 80 f − Frequency − MHz f − Frequency − MHz Figure 30. Adjusted Sideband Supression vs Frequency and Temperature Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 Typical Characteristics (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). −10 0 Adj at 2500 MHz @ 25°C LO = 4 dBm VCC = 5 V SS − Adjusted Sideband Suppression − dBc SS − Adjusted Sideband Suppression − dBc 0 −20 −30 –40°C −40 −50 −60 25°C 85°C −70 −10 Adj at 3500 MHz @ 25°C LO = 4 dBm VCC = 5 V −20 −30 –40°C −40 −50 −60 −70 85°C −80 2400 2440 2480 2520 2560 −80 3400 2600 3440 3480 f − Frequency − MHz 25°C 3520 3560 3600 f − Frequency − MHz G032 Figure 31. Adjusted Sideband Supression vs Frequency and Temperature G033 Figure 32. Adjusted Sideband Supression vs Frequency and Temperature −10 30 Adj at 5800 MHz @ 25°C LO = 4 dBm VCC = 5 V –40°C 28 26 −20 –40°C 24 −30 OIP3 − dBm SS − Adjusted Sideband Suppression − dBc 0 −40 −50 85°C 20 18 16 −60 25°C 14 85°C −70 12 −80 5700 5740 5780 5820 5860 40 37 34 25°C 26 31 85°C OIP3 − dBm 24 –40°C 20 18 12 28 25 22 –40°C 85°C 19 16 14 G035 25°C 28 22 1.70 1.75 1.80 Figure 34. OIP3 vs Common-Mode Voltage at 948.5 MHz 32 30 1.55 1.60 1.65 VCM − Common-Mode Voltage − V G034 Figure 33. Adjusted Sideband Supression vs Frequency and Temperature fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V 10 1.40 1.45 1.50 5900 f − Frequency − MHz OIP3 − dBm 25°C 22 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V 10 1.40 1.45 1.50 1.55 1.60 1.65 16 13 1.70 1.75 1.80 VCM − Common-Mode Voltage − V 10 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 VCM − Common-Mode Voltage − V G036 Figure 35. OIP3 vs Common-Mode Voltage at 1800 MHz fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V G037 Figure 36. OIP3 vs Common-Mode Voltage at 2140 MHz Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 13 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com Typical Characteristics (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). 40 37 34 40 fBB = 4.5, 5.5 MHz POUT = −8 dBm Per Tone LO = 4 dBm VCC = 5 V 31 1800 MHz 30 28 OIP3 − dBm OIP3 − dBm fBB = 4.5, 5.5 MHz LO = 4 dBm VCC = 5 V TA = 25°C 35 25°C 25 22 25 948.5 MHz 20 19 85°C 16 15 13 –40°C 10 1.40 1.45 1.50 1.55 1.60 1.65 10 −12 1.70 1.75 1.80 VCM − Common-Mode Voltage − V −8 −6 −4 −2 0 2 4 POUT − Total Output Power − dBm G038 Figure 37. OIP3 vs Common-Mode Voltage at 5800 MHz G039 Figure 38. OIP3 vs Total Output Power 25 60 50 20 Distribution − % 40 Distribution − % −10 30 15 10 20 5 10 0 0 24 25 26 27 28 56 29 58 60 62 64 66 68 70 72 OIP2 − dBm OIP3 − dBm G043 G042 Figure 40. OIP2 at 1960 MHz Distribution Figure 39. OIP3 at 1960 MHz Distribution 30 18 16 25 14 20 Distribution − % Distribution − % 12 10 8 15 10 6 4 5 2 0 0 −36 −40 −44 −48 −52 −56 −60 −64 −68 −72 −76 −24 −28 −32 −36 −40 −44 −48 −52 −56 −60 −64 SS − Unadjusted Sideband Suppression − dBc CS − Unadjusted Carrier Feedthrough − dBm G045 G044 Figure 41. Unadjusted Carrier Feedthrough at 1960 MHz Distribution 14 Figure 42. Unadjusted Sideband Suppression at 1960 MHz Distribution Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 Typical Characteristics (continued) VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50 kHz (unless otherwise noted). 35 30 Distribution − % 25 20 15 10 5 0 11.4 11.6 11.8 12 12.2 12.4 P1dB − dBm G046 Figure 43. P1dB at 1800 MHz Distribution Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 15 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com 7 Detailed Description 7.1 Overview TRF370417 is a low-noise direct quadrature modulator with high linearity, capable of converting complex modulated signals from baseband or IF directly to RF. With high-performance and superior-linearity, the TRF370417 is an ideal device to up-convert to RF frequencies from 50-MHz through 6-GHz. The baseband inputs can support an input bandwidth up to 1-GHz. The modulator is implemented as a double-balanced mixer. The RF output block contains a differential to single-ended converter to drive a 50-ohm load without the need for external matching components. The baseband input common-mode voltage is set at 1.7-V for optimum linearity performance. VCC GND BBIN BBIP GND GND 24 23 22 21 20 19 7.2 Functional Block Diagram NC 1 18 VCC GND 2 17 GND LOP 3 16 RF_OUT S 0/90 12 NC GND 13 11 6 GND NC 10 GND BBQP 14 9 5 BBQN GND 8 NC GND 15 7 4 NC LON B0175-01 NOTE: NC = No connection 7.3 Feature Description TRF370417 supports an I/Q baseband input bandwidth of 1-GHz. With this bandwidth capability the input signal can be centered at a high IF frequency to provide frequency separation from unwanted carrier feed-through or sideband image. Utilizing the full baseband bandwidth yields an RF output bandwidth up to 2-GHz. 7.4 Device Functional Modes 7.4.1 Baseband Common-Mode Voltage TRF370417 input baseband pins operate around a common-mode voltage of 1.7-V. Variation around this common-mode is possible but best linearity performance is generally achieved when kept at nominal voltage. 16 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 Device Functional Modes (continued) 7.4.2 LO Drive Level The LO drive level is nominally specified at 4-dBm. The device can accept a large range of LO drive level. A higher drive level generally provides better output noise performance and some linearity improvement. There is some trade-off between carrier feed-through and sideband suppression performance that is dependent on frequency and drive level. The LO drive level of 4-dB is deemed a good balance between those two parameters across frequency. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 17 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information 8.1.1 Basic Connections • See Figure 44 for proper connection of the TRF3704 modulator. • Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown on pins 4, 5, 6, and 7. • Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND. • Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm). This should be ac-coupled through a 100-pF capacitor. • Terminate the ac-coupled LON with 50 Ω to GND. • Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q. • The differential baseband inputs should be set to the proper common-mode voltage of 1.7 V. • RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal. This pin should also be ac-coupled through a 100-pF capacitor. • All NC pins can be left floating. 8.1.1.1 ESD Sensitivity RF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devices should be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the rated level. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board (PCB). Follow these guidelines for optimal ESD protection: • Low ESD performance is not uncommon in RF ICs; see the Absolute Maximum Ratings table. Therefore, customers’ ESD precautions should be consistent with these ratings. • The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly connect the device pins to off-board circuits. 18 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 Application Information (continued) DNI C10 DNI C11 .1uF .1uF J3 BBIN 2 3 4 5 1 TP3 GND BLK TP4 VCC2 R2 R3 0 0 SMA_END 5 4 3 2 1 SMA_END J4 BBIP TP2 VCC1 RED RED + C6 4.7uF C5 C4 1000pF 1000pF TP1 GND BLK + C7 4.7uF C15 C14 10pF 10pF J1 LOP VCC1 GND7 RF_OUT U1 NC5 TRF370x GND6 NC4 J7 RF_OUT 18 17 16 15 14 13 C3 C2 1 R1 100pF 0 SMA_END 1 C8 C9 1uF DNI 1uF DNI 7 8 9 10 11 12 J2 LON 100pF 2 3 4 5 SMA_END NC1 GND1 LOP LON GND2 NC2 NC3 GND3 BBQN BBQP GND4 GND5 1 2 3 4 5 6 5 4 3 2 2 3 4 5 25 24 23 22 21 20 19 100pF GND VCC2 GND10 BBIN BBIP GND9 GND8 C1 1 SMA_END TRF370333 0 DNI 0 TRF370315 0 J5 QN DNI TRF370417 0 R4 R5 0 0 1 SMA_END 2 3 4 5 DNI J6 QP 1 DNI DNI C12 C13 .1uF .1uF SMA_END 5 4 3 2 TRF370317 S0214-03 NOTE: DNI = Do not install. Figure 44. TRF3704 EVM Schematic 8.1.2 GSM Applications The TRF370417 is suited for GSM and multicarrier GSM applications because of its high linearity and low noise level over the entire recommended operating range. It also has excellent EVM performance, which makes it ideal for the stringent GSM/EDGE applications. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 19 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com Application Information (continued) 8.1.3 WCDMA Applications The TRF370417 is also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR) and noise density are critically important. Using Texas instruments’ DAC568X series of high-performance digitalto-analog converters as depicted in Figure 44, excellent ACPR levels were measured with one-, two-, and fourWCDMA carriers. See Electrical Characteristics, fLO = 1960 MHz and fLO = 2140 MHz for exact ACPR values. 8.2 Typical Application 16 TRF370x I/Q Modulator DAC5687 RF Out 16 CLK1 CLK2 VCXO TRF3761 PLL LO Generator CDCM7005 Clock Gen Ref Osc B0176-02 Figure 45. Typical Transmit Setup Block Diagram 8.2.1 Design Requirements Table 1 lists the requirements and limitations for pin termination. Table 1. Pin Termination Requirements and Limitations 20 NAME PIN NO. DESCRIPTION BBQM 9 Baseband in-quadrature input: negative terminal. Optimal linearity is obtained if VCM is 1.7-V. Normally terminated in 50 Ω BBQP 10 Baseband in-quadrature input: positive terminal. Optimal linearity is obtained if VCM is 1.7-V. Normally terminated in 50 Ω BBIP 21 Baseband in-phase input: positive terminal. Optimal linearity is obtained if VCM is 1.7-V. Normally terminated in 50 Ω BBIM 22 Baseband in-phase input: negative terminal. Optimal linearity is obtained if VCM is 1.7-V. Normally terminated in 50 Ω LOP 3 Local oscillator input: positive terminal. This is preferred port when driving single ended. Normally AC coupled and terminated in 50 Ω LOM 4 Local oscillator input: negative terminal. When driving LO single-ended, normally AC coupled and terminated in 50 Ω. RFOUT 16 RF output. Normally AC coupled. Recommend to terminate with broadband 50- Ω load. VCC 18, 24 5.0-V power supply. Can be tied together and sourced from a single clean supply. Each pin should be properly RF bypassed. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 8.2.2 Detailed Design Procedure Table 2. Bill of Materials for TRF370x EVM ITEM NUMBER QUANTITY 1 3 C1, C2, C3 100 pF 0402 PANASONIC ECJ-0EC1H101J 2 2 C4, C5 1000 pF 0402 PANASONIC ECJ-0VC1H102J 3 2 C6, C7 4.7 μF TANT_A KERMET T491A475K016AS 4 0 C8, C9 1 μF 0402 PANASONIC ECJ0EC1H010C_DNI DNI 5 0 C10, C11, C12, 0.1 μF C13 0402 PANASONIC ECJ0EB1A104K_DNI DNI 6 2 C14, C15 10 pF 0402 MURATA GRM1555C1H100JZ0 1D 7 7 J1, J2, J3, J4, J5, J6, J7 LOP SMA_SMEL_250x215 JOHNSON COMPONENTS 142-0711-821 8 2 R1 0 0402 PANASONIC ERJ-2GE0R00 OR EQUIVALENT 9 4 R2, R3, R4, R5 0 0402 PANASONIC ERJ-2GE0R00 OR EQUIVALENT TRF370333 QFN_24_163x163_ 0p50mm TI TRF370333 For TRF370333 EVM, TI supplied TRF370317 QFN_24_163x163_ 0p50mm TI TRF370317 For TRF370317 EVM, TI supplied TRF370315 QFN_24_163x163_ 0p50mm TI TRF370315 For TRF370315 EVM, TI supplied TRF370417 QFN_24_163x163_ 0p50mm TI TRF370417 For TRF370417 EVM, TI supplied 10 1 REFERENCE DESIGNATOR VALUE U1 PCB FOOTPRINT MFR. NAME MFT. PART NUMBER 11 2 TP1, TP3 BLK TP_THVT_100_RND KEYSTONE 5001K 12 2 TP2, TP4 RED TP_THVT_100_RND KEYSTONE 5000K NOTE 8.2.2.1 DAC-to-Modulator Interface Network For optimum linearity and dynamic range, the digital-to-analog converter (DAC) can interface directly with the modulator; however, the common-mode voltage of each device must be maintained. A passive interface circuit is used to transform the common-mode voltage of the DAC to the desired set-point of the modulator. The passive circuit invariably introduces some insertion loss between the two devices. In general, it is desirable to keep the insertion loss as low as possible to achieve the best dynamic range. Figure 46 shows the passive interconnect circuit for two different topologies. One topology is used when the DAC (such as the DAC568x) common-mode is larger than the modulator. The voltage Vee is nominally set to ground, but can be set to a negative voltage to reduce the insertion loss of the network. The second topology is used when the DAC (such as the DAC56x2) common-mode is smaller than the modulator. Note that this passive interconnect circuit is duplicated for each of the differential I/Q branches. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 21 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com Vdd It DAC568x R1 R2 TRF370x 1.7V 3.3V R3 Id Vee Topology 1: DAC Vcm > TRF370x Vcm Vdd It DAC56x2 0.7V R1 TRF370x R2 1.7V R3 Id Topology 2: DAC Vcm < TRF370x Vcm S0338-01 Figure 46. Passive DAC-to-Modulator Interface Network Table 3. DAC-to-Modulator Interface Network Values TOPOLOGY 1 TOPOLOGY 2 WITH VEE = 0 V WITH VEE = 5 V DAC Vcm [V] 3.3 3.3 0.7 TRF370x Vcm [V] 1.7 1.7 1.7 Vdd [V] 5 5 5 Vee [V] Gnd –5 N/A R1 [Ω] 66 56 960 R2 [Ω] 100 80 290 R3 [Ω] 108 336 52 Insertion loss [dB] 5.8 1.9 2.3 22 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 8.2.3 Application Curves −60 −63 One Carrier, WCDMA at 1960 MHz DAC5687 as Source with 2.5 MHz LPF ACPR − Adjacent Channel Power Ratio − dBc ACPR − Adjacent Channel Power Ratio − dBc −60 −66 −69 Adj −72 −75 −78 −81 −84 Alt −87 −90 −20 −18 −16 −14 −12 −10 −8 −6 −4 POUT − Output Power − dBm −63 −66 −69 −72 Adj −75 −78 −81 −84 Alt −87 −90 −20 −18 −16 −14 −12 −10 −8 POUT − Output Power − dBm G040 Figure 47. Adjacent Channel Power Ratio vs Output Power at 1960 MHz One Carrier, WCDMA at 2140 MHz DAC5687 as Source with 2.5 MHz LPF −6 −4 G041 Figure 48. Adjacent Channel Power Ratio vs. Output Power at 2140 MHz 9 Power Supply Recommendations The TRF370417 is powered by supplying a nominal 5 V to pins 18 and 24. These supplies can be tied together and sourced from a single clean supply. Proper RF bypassing should be placed close to each power supply pin. Ground pin connections should have at least one ground via close to each ground pin to minimize ground inductance. The thermal pad must be tied to ground, preferably with the recommended ground via pattern to provide a good thermal conduction path to the alternate side of the board and to provide a good RF ground for the device. (Refer to Layout Guidelines for additional information.) 10 Layout 10.1 Layout Guidelines The TRF370417 device is fitted with a ground slug on the back of the package that must be soldered to the printed circuit board (PCB) ground with adequate ground vias to ensure a good thermal and electrical connection. The recommended via pattern and ground pad dimensions are shown in Figure 76. The recommended via diameter is 10 mils (0.10 in or 0.25 mm). The ground pins of the device can be directly tied to the ground slug pad for a low-inductance path to ground. Additional ground vias may be added if space allows. Decoupling capacitors at each of the supply pins are strongly recommended. The value of these capacitors should be chosen to provide a low-impedance RF path to ground at the frequency of operation. Typically, the value of these capacitors is approximately 10 pF or lower. The device exhibits symmetry with respect to the quadrature input paths. TI recommends that the PCB layout maintain this symmetry to ensure that the quadrature balance of the device is not impaired. The I/Q input traces should be routed as differential pairs and the respective lengths all kept equal to each other. On the RF traces, maintain proper trace widths to keep the characteristic impedance of the RF traces at a nominal 50 Ω. 10.2 Layout Example Figure 49 shows the top view of the TRF3704 EVM board. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 23 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com Layout Example (continued) Æ 0,254 0,508 1,16 2,45 2,45 0,508 1,16 Figure 49. PCB Via Ground Layout Guide 24 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 TRF370417 www.ti.com SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 11 Device and Documentation Support 11.1 Device Support 11.1.1 Device Nomenclature Adjusted (Optimized) Carrier Feedthrough This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in the output spectrum. This is measured in dBm. Adjusted (Optimized) Sideband Suppression This differs from the unadjusted sideband suppression in that the gain and phase of the baseband inputs are iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. This is measured in dBc. gn IM d ire D es O rd Si er IM er rd U nw an te d Si de ba nd 2 3 rd O nd al Suppressions Over Temperature This specification assumes that the user has gone though the optimization process for the suppression in question, and set the optimal settings for the I, Q inputs. This specification then measures the suppression when temperature conditions change after the initial calibration is done. Figure 50 shows a simulated output and illustrates the respective definitions of various terms used in this data sheet. + B2 (f B )+ 1 f BB LO rd = B2 (f B fnBBn = RF FrequencyBBn dH L = rd f 2n f1 – 2 2f = LO + H f 3rd 2 O f BB L = 1+ 2 f f2 f BB – LO = f1 )+ f1 = 2 1 f BB – f 3rd dL f 2n LO 1 f BB – 2 LO f BB = – B1 LO LS 2 = B LS rd fBBnBBn= Baseband FrequencyBBn f rd rd rd rd f3rdH/L 3= 3BBnOrder Intermodulation Product Frequency (High Side/Low Side)BBn nd nd rd f2ndH/L 2 = 2BBnOrder Intermodulation Product rd rd LOBBn = Local Oscillator FrequencyBBn rd rd = Lower Sideband FrequencyBBn LSBnBBn (High Side/Low Side)BBn rd rd M0104-01 Figure 50. Graphical Illustration of Common Terms Unadjusted Carrier Feedthrough This specification measures the amount by which the local oscillator component is suppressed in the output spectrum of the modulator. If the common-mode voltage at each of the baseband inputs is exactly the same and there was no dc imbalance introduced by the modulator, the LO component would be naturally suppressed. DC offset imbalances in the device allow some of the LO component to feed through to the output. Because this phenomenon is independent of the RF output power and the injected LO input power, the parameter is expressed in absolute power, dBm. Unadjusted Sideband Suppression This specification measures the amount by which the unwanted sideband of the input signal is suppressed in the output of the modulator, relative to the wanted sideband. If the amplitude and phase within the I and Q branch of the modulator were perfectly matched, the unwanted sideband (or image) would be naturally suppressed. Amplitude and phase imbalance in the I and Q branches results in the increase of the unwanted sideband. This parameter is measured in dBc relative to the desired sideband. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 25 TRF370417 SLWS213A – JANUARY 2010 – REVISED NOVEMBER 2015 www.ti.com 11.2 Documentation Support 11.2.1 Related Documentation For related documentation, see the documents that follow: • TRF370x User's Guide • TRF370417: Optimizing OIP3 Performance at Local Oscillator (LO) Frequencies Beyond 4.5 GHz • High Bandwidth, High Frequency Transmitter Reference Design 11.3 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.4 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.5 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 26 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TRF370417 PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) TRF370417IRGER ACTIVE VQFN RGE 24 3000 Green (RoHS & no Sb/Br) NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF37 0417 TRF370417IRGET ACTIVE VQFN RGE 24 250 Green (RoHS & no Sb/Br) NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF37 0417 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of