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TRF3705
SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
TRF3705 300-MHz to 4-GHz Quadrature Modulator
1 Features
3 Description
•
The TRF3705 is a low-noise direct quadrature
modulator, capable of converting complex modulated
signals from baseband or IF directly up to RF. The
TRF3705 is a high-performance, superior-linearity
device that is ideal to up-convert to RF frequencies of
300 MHz (Note: appropriate matching network is
required for optimal performance at 300 MHz)
through 4 GHz. The modulator is implemented as a
double-balanced mixer.
1
•
•
•
•
•
•
•
High Linearity:
– Output IP3: 30 dBm at 1850 MHz
Low Output Noise Floor: –160 dBm/Hz
78-dBc Single-Carrier WCDMA ACPR
at –10-dBm Channel Power
Unadjusted Carrier Suppression: –40 dBm
Unadjusted Sideband Suppression: –45 dBc
Single Supply: 3.3-V Operation
1-bit Gain Step Control
Fast Power-Up/Power-Down
The RF output block consists of a differential-tosingle-ended converter that is capable of driving a
single-ended 50-Ω load. The TRF3705 requires a
0.25-V common-mode voltage for optimum linearity
performance. The TRF3705 also provides a fast
power-down pin that can be used to reduce power
dissipation in TDD applications.
2 Applications
•
•
•
•
•
•
Cellular Base Station Transmitter
CDMA: IS95, UMTS, CDMA2000, TD-SCDMA
LTE (Long Term Evolution)
TDMA: GSM, EDGE/UWC-136
Multicarrier GSM (MC-GSM)
Wireless MAN Wideband Transceivers
The TRF3705 is available in an RGE-24 VQFN
package.
Device Information(1)
PART NUMBER
TRF3705
PACKAGE
VQFN (24)
BODY SIZE (NOM)
4.00 mm x 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
VCC
GND
BBIM
BBIP
GND
GND
24
23
22
21
20
19
Block Diagram
PD
1
18
VCC
GND
2
17
GND
LOP
3
16
RFOUT
S
0/90
12
GND
GND
13
11
6
GND
GC
10
GND
BBQP
14
9
5
BBQM
GND
8
GND
GND
15
7
4
GND
LOM
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TRF3705
SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
Absolute Maximum Ratings ..................................... 4
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics: General ............................ 5
Electrical Characteristics........................................... 6
Typical Characteristics: Single-Tone Baseband ..... 10
Typical Characteristics: Two-Tone Baseband ........ 12
Typical Characteristics: Two-Tone Baseband, MidBand Calibration ...................................................... 16
6.10 Typical Characteristics: No Baseband .................. 18
6.11 Typical Characteristics: Two-Tone Baseband ...... 19
7
7.1
7.2
7.3
7.4
8
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
22
22
22
22
Application and Implementation ........................ 23
8.1 Application Information .......................................... 23
8.2 Typical Application .................................................. 23
9 Power Supply Recommendations...................... 29
10 Layout................................................................... 30
10.1 Layout Guidelines ................................................. 30
10.2 Layout Example .................................................... 30
11 Device and Documentation Support ................. 31
11.1
11.2
11.3
11.4
Device Support ....................................................
Community Resources..........................................
Trademarks ...........................................................
Glossary ................................................................
31
32
32
32
12 Mechanical, Packaging, and Orderable
Information ........................................................... 32
Detailed Description ............................................ 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (October 2011) to Revision B
Page
•
Added the ESD table, Detailed Description, Application and Implementation, Device and Documentation Support,
Mechanical, Packaging, and Orderable Information............................................................................................................... 1
•
Added Note 1 to Figure 65 ................................................................................................................................................... 23
•
Changed the X-axis label of Figure 75 From: Frequency (MHz) To: LO Power (dBm) ....................................................... 28
•
Changed Figure 77............................................................................................................................................................... 32
Changes from Original (August 2011) to Revision A
•
2
Page
Changed the device From: Preview To: Production............................................................................................................... 1
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SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
5 Pin Configuration and Functions
VCC
GND
BBIM
BBIP
GND
GND
24
23
22
21
20
19
RGE Package
24 Pin VQFN
Top View
PD
1
18
VCC
GND
2
17
GND
LOP
3
16
RFOUT
Thermal Pad
GND
GND
12
13
GND
6
11
GC
GND
GND
10
14
BBQP
5
9
GND
BBQM
GND
8
15
GND
4
7
LOM
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
PD
I
Power-down digital input (high = device off)
2
GND
I
Ground
3
LOP
I
Local oscillator input
4
LOM
I
Local oscillator input
5
GND
I
Ground
6
GC
I
Gain control digital input (high = high gain)
7
GND
—
8
GND
I
Ground
9
BBQM
I
In-quadrature input
10
BBQP
I
In-quadrature input
11
GND
I
Ground
12
GND
I
Ground
13
GND
I
Ground
14
GND
I
Ground
Ground or leave unconnected
15
GND
I
Ground
16
RFOUT
O
RF output
17
GND
I
Ground
18
VCC
I
Power supply
19
GND
I
Ground
20
GND
I
Ground
21
BBIP
I
In-phase input
22
BBIM
I
In-phase input
23
GND
I
Ground
24
VCC
I
Power supply
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SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
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6 Specifications
6.1 Absolute Maximum Ratings (1)
Over operating free-air temperature range (unless otherwise noted).
MIN
MAX
UNIT
Supply voltage range (2)
–0.3
6
V
Digital I/O voltage range
–0.3
VCC + 0.5
V
Operating virtual junction temperature range, TJ
–40
150
°C
Operating ambient temperature range, TA
–40
85
°C
Storage temperature range, Tstg
–65
150
°C
(1)
(2)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±4000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±250
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. .
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted).
VCC
Power-supply voltage
MIN
NOM
MAX
3.15
3.3
3.6
UNIT
V
6.4 Thermal Information
TRF3705
THERMAL METRIC (1)
RGE (VQFN)
UNIT
24 PINS
RθJA
Junction-to-ambient thermal resistance
38.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
42.5
°C/W
RθJB
Junction-to-board thermal resistance
16.6
°C/W
ψJT
Junction-to-top characterization parameter
0.9
°C/W
ψJB
Junction-to-board characterization parameter
16.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
6.6
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
6.5 Electrical Characteristics: General
Over recommended operating conditions; at power supply = 3.3 V and TA = +25°C, unless otherwise noted.
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC PARAMETERS
ICC
TA = +25°C, device on (PD = low)
306
mA
TA = +25°C, device off (PD = high)
35
μA
LO low frequency
300
MHz
LO high frequency
4000
Total supply current
LO INPUT
fLO
LO input power
–10
MHz
0
+15
dBm
0.5
V
BASEBAND INPUTS
VCM
I and Q input dc common-mode
voltage
0.25
BW
1-dB input frequency bandwidth
1000
ZI
Input impedance
Resistance
MHz
8
kΩ
Parallel capacitance
4.6
pF
Turn on time
PD = low to 90% final output power
0.2
μs
Turn off time
PD = high to initial output power –30 dB
0.2
μs
POWER ON/OFF
DIGITAL INTERFACE
VIH
PD high-level input voltage
VIL
PD low-level input voltage
2
V
0.8
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TRF3705
SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
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6.6 Electrical Characteristics
Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, singleended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching
circuit, unless otherwise noted.
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 400 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
–4.7
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
–1.9
dB
GC set low
–0.7
dBm
GC set high
2.1
dBm
GC set low
8.5
dBm
GC set high
9.1
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
26
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
25.4
dBm
Measured at fLO + (fBB1± fBB2), GC set low
60.2
dBm
Measured at fLO + (fBB1± fBB2), GC set high
61.9
dBm
–57.4
dBc
–51.6
dBm
Measured at 2 x LO
–50
dBm
Measured at 3 x LO
–49
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–166.7
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
dBm/Hz
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 x fBB)
–67
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 x fBB)
–64
dBc
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
0.2
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
3.0
dB
GC set low
4.2
dBm
7
dBm
GC set low
13.3
dBm
GC set high
13.9
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
31.5
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
30.8
dBm
Measured at fLO + (fBB1± fBB2), GC set low
73.6
dBm
Measured at fLO + (fBB1± fBB2), GC set high
80.5
dBm
fLO = 750 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
GC set high
–45.2
dBc
–45.7
dBm
Measured at 2 x LO
–46
dBm
Measured at 3 x LO
–53.5
dBm
–159.9
dBm/Hz
Measured at LO frequency
CF
Unadjusted carrier feedthrough
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 x fBB)
–70
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 x fBB)
–66
dBc
6
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SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
Electrical Characteristics (continued)
Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, singleended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching
circuit, unless otherwise noted.
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 900 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
0.3
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
3.1
dB
GC set low
4.3
dBm
GC set high
7.1
dBm
GC set low
13.2
dBm
GC set high
13.7
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
31.7
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
30.9
dBm
Measured at fLO + (fBB1± fBB2), GC set low
71.5
dBm
Measured at fLO + (fBB1± fBB2), GC set high
75.3
dBm
–43.8
dBc
–48.5
dBm
Measured at 2 x LO
–53
dBm
Measured at 3 x LO
–50
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–157.9
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
dBm/Hz
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 x fBB)
–80
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 x fBB)
–65
dBc
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
–0.1
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
2.5
dB
GC set low
3.9
dBm
GC set high
6.5
dBm
GC set low
13.2
dBm
GC set high
13.6
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
32.1
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
30.3
dBm
Measured at fLO + (fBB1± fBB2), GC set low
60.8
dBm
62
dBm
fLO = 1840 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
Measured at fLO + (fBB1± fBB2), GC set high
–43.4
dBc
–42.4
dBm
Measured at 2 x LO
–41
dBm
Measured at 3 x LO
–53
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–158.8
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
dBm/Hz
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 x fBB)
–69
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 x fBB)
–80
dBc
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Electrical Characteristics (continued)
Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, singleended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching
circuit, unless otherwise noted.
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 2140 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
0.1
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
2.9
dB
GC set low
4.1
dBm
GC set high
6.9
dBm
GC set low
13.1
dBm
GC set high
13.5
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
28.6
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
27.6
dBm
Measured at fLO + (fBB1± fBB2), GC set low
65.5
dBm
Measured at fLO + (fBB1± fBB2), GC set high
68.2
dBm
–45.6
dBc
–39.3
dBm
Measured at 2 x LO
–37
dBm
Measured at 3 x LO
–46
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–160.0
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
dBm/Hz
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 x fBB)
–61
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 x fBB)
–60
dBc
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
–0.8
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
2
dB
fLO = 2600 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
GC set low
3.2
dBm
GC set high
5.6
dBm
GC set low
12.5
dBm
GC set high
12.8
dBm
28
dBm
FfBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
27.2
dBm
Measured at fLO + (fBB1± fBB2), GC set low
67.9
dBm
Measured at fLO + (fBB1± fBB2), GC set high
66.4
dBm
–52.9
dBm
–37.8
dBm
Measured at 2 x LO
–41
dBm
Measured at 3 x LO
–42
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
Measured at LO frequency
CF
Unadjusted carrier feedthrough
DC only to BB inputs; 10-MHz offset from LO
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 x fBB)
–67
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 x fBB)
–59
dBc
8
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–160.6
dBm
Output noise floor
dBm/Hz
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Electrical Characteristics (continued)
Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, singleended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching
circuit, unless otherwise noted.
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 3500 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
–1
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
1.8
dB
GC set low
3
dBm
GC set high
5.8
dBm
GC set low
12.1
dBm
GC set high
12.3
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
23.8
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
25.3
dBm
Measured at fLO + (fBB1± fBB2), GC set low
47.8
dBm
Measured at fLO + (fBB1± fBB2), GC set high
48.6
dBm
–45.2
dBm
–31.6
dBm
Measured at 2 x LO
–30
dBm
Measured at 3 x LO
–53
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–160.6
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
dBm/Hz
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 x fBB)
–54
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 x fBB)
–50
dBc
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6.7 Typical Characteristics: Single-Tone Baseband
10
9
8
7
6
5
4
3
2
1
0
−1
−2
TA = −40°C
TA = 25°C
TA = 85°C
Output Power (dBm)
Output Power (dBm)
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude = 1VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G003
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G005
Figure 4. Output Power vs LO Frequency (fLO) and Gain
Select Setting
15
VCM = 0.5 V
TA = −40°C
TA = 25°C
TA = 85°C
LO Frequency = 2140 MHz
10
Output Power (dBm)
Output Power (dBm)
1000
Gain Control = Off
Gain Control = On
G004
5
0
−5
−10
−15
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
−20
0.01
G066
Figure 5. Output Power vs LO Frequency (fLO) and
Temperature at VCM = 0.5 V
10
500
10
9
8
7
6
5
4
3
2
1
0
−1
−2
Figure 3. Output Power vs LO Frequency (fLO) Over LO
Drive Level
10
9
8
7
6
5
4
3
2
1
0
−1
−2
0
Figure 2. Output Power vs LO Frequency (fLO) and Supply
Voltage
Output Power (dBm)
Output Power (dBm)
−1
−2
2
1
0
−1
−2
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
G002
Figure 1. Output Power vs LO Frequency (fLO) and
Temperature
10
9
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
0.1
1
Baseband Voltage Single−Ended (Vpp)
10
G001
Figure 6. Output Power vs Baseband Voltage at 2140 MHz
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SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
Typical Characteristics: Single-Tone Baseband (continued)
17
16
15
14
13
12
11
10
9
8
7
6
5
TA = −40°C
TA = 25°C
TA = 85°C
P1dB (dBm)
P1dB (dBm)
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude = 1VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
P1dB (dBm)
500
1000
500
1000
3000
3500
4000
G007
6
5
Gain Control = Off
Gain Control = On
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G009
Figure 10. P1dB vs LO Frequency (fLO) and Gain Select
Setting
VCM = 0.5 V
0
1500 2000 2500
Frequency (MHz)
17
16
15
14
13
12
11
10
9
8
7
G008
Figure 9. P1dB vs LO Frequency (fLO) and LO Drive Level
17
16
15
14
13
12
11
10
9
8
7
6
5
0
Figure 8. P1dB vs LO Frequency (fLO) and Supply Voltage
P1dB (dBm)
P1dB (dBm)
6
5
9
8
7
6
5
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
G006
Figure 7. P1dB vs LO Frequency (fLO) and Temperature
17
16
15
14
13
12
11
10
9
8
7
17
16
15
14
13
12
11
10
TA = −40°C
TA = 25°C
TA = 85°C
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G010
Figure 11. P1dB vs LO Frequency (fLO) and Temperature AT VCM = 0.5 V
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6.8 Typical Characteristics: Two-Tone Baseband
36
34
32
30
28
26
24
22
20
18
16
14
12
10
TA = −40°C
TA = 25°C
TA = 85°C
OIP3 (dBm)
OIP3 (dBm)
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
OIP3 (dBm)
OIP3 (dBm)
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
500
1000
TA = −40°C
TA = 25°C
TA = 85°C
1500 2000 2500
Frequency (MHz)
3000
3500
4000
36
34
32
30
28
26
24
22
20
18
16
14
12
10
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G012
Gain Control = Off
Gain Control = On
0
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G015
TA = −40°C
TA = 25°C
TA = 85°C
0
G014
Figure 16. OIP3 vs LO Frequency (fLO) and Temperature AT
VCM = 0.5 V
12
1000
Figure 15. OIP3 vs LO Frequency (fLO) And Gain Select
Setting
OIP2 (dBm)
OIP3 (dBm)
VCM = 0.5 V
0
500
G013
Figure 14. OIP3 vs LO Frequency (fLO) and LO Drive Level
36
34
32
30
28
26
24
22
20
18
16
14
12
10
0
Figure 13. OIP3 vs LO FRequency (fLO) anD Supply Voltage
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
0
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
G011
Figure 12. OIP3 vs LO Frequency (fLO) and Temperature
36
34
32
30
28
26
24
22
20
18
16
14
12
10
36
34
32
30
28
26
24
22
20
18
16
14
12
10
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G016
Figure 17. OIP2 vs LO Frequency (fLO) and Temperature
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SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
Typical Characteristics: Two-Tone Baseband (continued)
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
OIP2 (dBm)
OIP2 (dBm)
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
OIP2 (dBm)
OIP2 (dBm)
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
500
1000
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
3000
3500
4000
G018
VCM = 0.5 V
0
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
500
1000
TA = −40°C
TA = 25°C
TA = 85°C
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G019
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
0
G021
Figure 22. Unadjusted Carrier Feedthrough vs LO
Frequency (fLO) and Temperature
1500 2000 2500
Frequency (MHz)
Figure 21. OIP2 vs LO Frequency (fLO) and Temperature AT
VCM = 0.5 V
Unadjusted Carrier Feedthrough (dBm)
Unadjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
0
500
G020
Figure 20. OIP2 vs LO Frequency (fLO) and Gain Select
Setting
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
0
Figure 19. OIP2 vs LO Frequency (fLO) and LO Drive Level
Gain Control = Off
Gain Control = On
0
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
G017
Figure 18. OIP2 vs LO Frequency (fLO) and Supply Voltage
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G022
Figure 23. Unadjusted Carrier Feedthrough vs LO
Frequency (fLO) and Supply Voltage
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Typical Characteristics: Two-Tone Baseband (continued)
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
Unadjusted Carrier Feedthrough (dBm)
Unadjusted Carrier Feedthrough (dBm)
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
0
500
1000
TA = −40°C
TA = 25°C
TA = 85°C
1500 2000 2500
Frequency (MHz)
3000
3500
Adjusted Carrier Feedthrough (dBm)
Unadjusted Carrier Feedthrough (dBm)
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G025
4000
500
1000
1500 2000 2500
Frequency (MHz)
−10
3000
3500
TA = −40°C
TA = 25°C
TA = 85°C
−20
−30
−40
−50
−60
−70
−80
−90
0
500
1000
G024
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G060
Figure 27. Carrier Feedthrough vs LO Frequency (fLO) and
Temperature After Nulling at 25°C; Multiple Devices
TA = −40°C
TA = 25°C
TA = 85°C
0
Adjusted at TA = 25°C
Device Count = 10
0
−100
Unadjusted Sideband Suppression (dBc)
Unadjusted Sideband Suppression (dBc)
500
10
VCM = 0.5 V
4000
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
0
G026
Figure 28. Unadjusted Sideband Suppression vs LO
Frequency (fLO) and Temperature
14
0
Figure 25. Unadjusted Carrier Feedthrough vs LO
Frequency (fLO) and Gain Select Setting
Figure 26. Unadjusted Carrier Feedthrough vs LO
Frequency (fLO) and Temperature at VCM = 0.5 V
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
Gain Control = Off
Gain Control = On
G023
Figure 24. Unadjusted Carrier Feedthrough vs LO
Frequency (fLO) and LO Drive Level
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G027
Figure 29. Unadjusted Sideband Suppression vs LO
Frequency (fLO) and Supply Voltage
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SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
Typical Characteristics: Two-Tone Baseband (continued)
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
Unadjusted Sideband Suppression (dBc)
Unadjusted Sideband Suppression (dBc)
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
Unadjusted Sideband Suppression (dBc)
Gain Control = Off
Gain Control = On
0
500
1000
G028
Figure 30. Unadjusted Sideband Suppression vs LO
Frequency (fLO) and LO Drive Level
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
500
1000
3000
3500
4000
G030
Figure 31. Unadjusted Sideband Suppression vs LO
Frequency (fLO) and Gain Select Setting
VCM = 0.5 V
0
1500 2000 2500
Frequency (MHz)
TA = −40°C
TA = 25°C
TA = 85°C
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G029
Figure 32. Unadjusted sideband Suppression vs LO Frequency (fLO) and Temperature at VCM = 0.5 V
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6.9 Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted. Single point adjustment mid-band.
−20
−10
Adjusted at 748MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
Adjusted Carrier Feedthrough (dBm)
Adjusted Carrier Feedthrough (dBm)
−10
−40
−50
−60
−70
−80
−90
−100
680
700
720
740
760
780
Frequency (MHz)
800
−50
−60
−70
−80
−90
890
910
930
950
970
Frequency (MHz)
990
1010
G037
Figure 34. Adjusted Carrier Feedthrough vs LO Frequency
and Temperature (GSM900 Band)
−30
Adjusted Carrier Feedthrough (dBm)
Adjusted Carrier Feedthrough (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
−40
−50
−60
−70
−80
−90
1900
1920
1940 1960 1980
Frequency (MHz)
2000
2020
−20
Adjusted at 2140MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
−40
−50
−60
−70
−80
−90
−100
2060
2040
2080
2100
G038
Figure 35. Adjusted Carrier Feedthrough vs LO Frequency
and Temperature (PCS Band)
2120 2140 2160
Frequency (MHz)
2180
2200
2220
G039
Figure 36. Adjusted carrier Feedthrough vs LO Frequency
and Temperature (UMTS Band)
−10
−10
Adjusted at 2600MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
Adjusted Carrier Feedthrough (dBm)
Adjusted Carrier Feedthrough (dBm)
−40
−10
Adjusted at 1960MHz − TA = 25°C
−100
1880
−40
−50
−60
−70
−80
−90
−100
2500
2525
2550
2575 2600 2625
Frequency (MHz)
2650
2675
2700
−20
Adjusted at 3500MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
−40
−50
−60
−70
−80
−90
−100
3400
G040
Figure 37. Adjusted Carrier Feedthrough vs LO Frequency
and Temperature (2.6 GHz LTE Band)
16
TA = −40°C
TA = 25°C
TA = 85°C
−30
G036
−10
−20
Adjusted at 942.5MHz − TA = 25°C
−100
870
820
Figure 33. Adjusted Carrier Feedthrough vs LO Frequency
and Temperature (750 LTE Band)
−20
−20
3425
3450
3475 3500 3525
Frequency (MHz)
3550
3575
3600
G041
Figure 38. Adjusted Carrier Feedthrough vs LO Frequency
and Temperature (WiMAX/LTE Band)
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SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration (continued)
−10
−20
Adjusted at 748MHz − TA = 25°C
Adjusted Sideband Suppression (dBc)
Adjusted Sideband Suppression (dBc)
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted. Single point adjustment mid-band.
TA = −40°C
TA = 25°C
TA = 85°C
−30
−40
−50
−60
−70
−80
−90
−100
680
700
720
740
760
780
Frequency (MHz)
800
820
Adjusted Sideband Suppression (dBc)
Adjusted Sideband Suppression (dBc)
−40
−50
−60
−70
−80
−90
−100
1880
1900
1920
1940 1960 1980
Frequency (MHz)
2000
2020
2040
TA = −40°C
TA = 25°C
TA = 85°C
−30
−40
−50
−60
−70
−80
−90
2550
2575 2600 2625
Frequency (MHz)
−50
−60
−70
−80
−90
890
910
2650
2675
2700
990
1010
G043
−10
−20
Adjusted at 2140MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
−40
−50
−60
−70
−80
−90
2080
2100
2120 2140 2160
Frequency (MHz)
2180
2200
2220
G045
−10
−20
Adjusted at 3500MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
−40
−50
−60
−70
−80
−90
−100
3400
G046
Figure 43. Adjusted Sideband Suppression vs LO
Frequency and Temperature (2.6 GHz LTE Band)
930
950
970
Frequency (MHz)
Figure 42. Adjusted Sideband Suppression vs LO
Frequency and Temperature (UMTS Band)
Adjusted Sideband Suppression (dBc)
Adjusted Sideband Suppression (dBc)
Adjusted at 2600MHz − TA = 25°C
2525
−40
G044
−10
−100
2500
−30
−100
2060
Figure 41. Adjusted Sideband Suppression vs LO
Frequency and Temperature (PCS Band)
−20
TA = −40°C
TA = 25°C
TA = 85°C
Figure 40. Adjusted Sideband Suppression vs LO
Frequency and Temperature (GSM900 Band)
TA = −40°C
TA = 25°C
TA = 85°C
−30
Adjusted at 942.5MHz − TA = 25°C
G042
−10
−20
−20
−100
870
Figure 39. Adjusted Sideband Suppression vs LO
Frequency and Temperature (750 LTE Band)
Adjusted at 1960MHz − TA = 25°C
−10
3425
3450
3475 3500 3525
Frequency (MHz)
3550
3575
3600
G047
Figure 44. Adjusted Sideband Suppression vs LO
Frequency and Temperature (WiMAX/LTE Band)
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6.10 Typical Characteristics: No Baseband
−140
−142
−144
−146
−148
−150
−152
−154
−156
−158
−160
−162
−164
−166
−168
−170
TA = −40°C
TA = 25°C
TA = 85°C
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
RF Output Noise Floor (dBm/Hz)
RF Output Noise Floor (dBm/Hz)
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); and input baseband ports terminated in 50 Ω, unless
otherwise noted.
4000
500
1000
1500 2000 2500
Frequency (MHz)
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
−140
−142
−144
−146
−148
−150
−152
−154
−156
−158
−160
−162
−164
−166
−168
−170
3500
4000
G032
Gain Control = Off
Gain Control = On
0
500
1000
1500 2000 2500
Frequency (MHz)
G033
Figure 47. Output Noise vs LO Frequency (fLO) AND LO
Drive Level
3000
Figure 46. Output Noise vs LO Frequency (fLO) and Supply
Voltage
RF Output Noise Floor (dBm/Hz)
RF Output Noise Floor (dBm/Hz)
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
0
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
G031
Figure 45. Output noisE vs LO Frequency (fLO) and
Temperature
−140
−142
−144
−146
−148
−150
−152
−154
−156
−158
−160
−162
−164
−166
−168
−170
−140
−142
−144
−146
−148
−150
−152
−154
−156
−158
−160
−162
−164
−166
−168
−170
3000
3500
4000
G035
Figure 48. OUtput Noise vs LO Frequency (fLO) and Gain
Select Setting
RF Output Noise Floor (dBm/Hz)
−144
LO Freq = 948.5 MHz
LO Freq = 1848 MHz
LO Freq = 2167 MHz
−146
−148
−150
−152
−154
−156
−158
−160
−25
−20
−15
−10
−5
0
RF Output Power (dBm)
5
10
G034
Figure 49. Output Noise vs Output Power
18
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SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015
6.11 Typical Characteristics: Two-Tone Baseband
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
10
10
RF 2nd Harmonic
RF 3rd Harmonic
RF 4th Harmonic
0
−10
−20
LO Harmonic (dBm)
RF Harmonic (dBc)
−10
−30
−40
−50
−60
−70
−80
−20
−30
−40
−50
−60
−70
−80
−90
−90
−100
−100
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
30
Distribution (%)
Distribution (%)
3000
3500
4000
G049
25
20
15
10
5
290
295
300
305
310
Total Icc (mA)
315
320
0
325
290
295
300
G065
305
310
Total Icc (mA)
315
320
325
G063
Figure 53. Current Consumption Distribution Over
Temperature
50
Mean =304.2 mA
StDev = 5.1
TA = 25°C
Mean = 28.6 dBm
StDev = 0.4
45
40
Distribution (%)
Distribution (%)
1500 2000 2500
Frequency (MHz)
Mean =303.8 mA
StDev = 6.9
Vcc = 3.3 V
35
25
20
15
10
35
30
25
20
15
10
5
0
1000
40
Mean =306.4 mA
StDev = 4.4
Vcc = 3.3 V
TA = 25°C
40
30
500
Figure 51. LO Harmonics vs LO Frequency (fLO)
Figure 52. Nominal Current Consumption Distribution
35
0
G048
Figure 50. RF Harmonics vs LO FRequency (fLO)
60
55
50
45
40
35
30
25
20
15
10
5
0
LO 2nd Harmonic
LO 3rd Harmonic
LO 4th Harmonic
0
5
290
295
300
305
310
Total Icc (mA)
315
320
325
0
27.5
G064
Figure 54. Current Consumption Distribution Over VCC
28
28.5
29
29.5
OIP3 (dBm)
30
30.5
G050
Figure 55. OIP3 Distribution at fLO = 2140 MHz
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Typical Characteristics: Two-Tone Baseband (continued)
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
30
25
40
Mean = 65.5 dBm
StDev = 0.8
Mean = 13.1 dBm
StDev = 0.1
35
Distribution (%)
Distribution (%)
30
20
15
10
25
20
15
10
5
0
5
0
62.5 63 63.5 64 64.5 65 65.5 66 66.5 67 67.5 68
OIP2 (dBm)
G051
Figure 56. OIP2 Distribution at fLO = 2140 MHz
12.9
13
13.1
13.2
P1dB (dBm)
13.3
13.4
13.5
G052
Figure 57. P1dB Distribution at fLO = 2140 MHz, fBB = 5.5
MHz
45
30
25
12.8
Mean = −45.6 dBc
StDev = 1.4
Mean = −39.3 dBm
StDev = 0.8
40
Distribution (%)
Distribution (%)
35
20
15
10
30
25
20
15
10
5
5
0
0
−52 −51 −50 −49 −48 −47 −46 −45 −44 −43 −42 −41
Unadjusted Sideband Suppression (dBc)
G053
Figure 58. Unadjusted Sideband Suppression DIstribution at
fLO = 2140 MHz
35
35
Distribution (%)
Distribution (%)
G054
Mean = 71.5 dBm
StDev = 0.5
40
30
25
20
15
30
25
20
15
10
10
5
5
31.2
31.4
31.6
31.8
32
OIP3 (dBm)
32.2
32.4
0
69
G055
Figure 60. OIP3 Distribution at fLO = 900 MHz
20
−36
45
Mean = 31.7 dBm
StDev = 0.2
40
0
−42
−41
−40
−39
−38
−37
Unadjusted Carrier Feedthrough (dBm)
Figure 59. Unadjusted Carrier Feedthrough Distribution at
fLO = 2140 MHz
50
45
−43
69.5
70
70.5
71 71.5 72
OIP2 (dBm)
72.5
73
73.5
74
G056
Figure 61. OIP2 Distribution at fLO = 900 MHz
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Typical Characteristics: Two-Tone Baseband (continued)
VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
55
50
45
50
Mean = 13.2 dBm
StDev = 0.1
40
Distribution (%)
Distribution (%)
40
35
30
25
20
35
30
25
20
15
15
10
10
5
5
0
Mean = −43.8 dBc
StDev = 0.9
45
12.9
13
13.1
13.2
13.3
P1dB (dBm)
13.4
13.5
13.6
0
−48
G057
Figure 62. P1dB distribution at fLO = 900 MHz, fBB = 5.5 MHz
−47 −46 −45 −44 −43 −42 −41
Unadjusted Sideband Suppression (dBc)
−40
G058
Figure 63. Unadjusted Sideband Suppression Distribution at
fLO = 900 MHz
50
Mean = −48.5 dBm
StDev = 4.9
45
Distribution (%)
40
35
30
25
20
15
10
5
0
−85 −80 −75 −70 −65 −60 −55 −50 −45 −40 −35
Unadjusted Carrier Feedthrough (dBm)
G059
Figure 64. Unadjusted Carrier Feedthrough Distribution at fLO = 900 MHz
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7 Detailed Description
7.1 Overview
TRF3705 is a low-noise direct quadrature modulator with high linearity, capable of converting complex modulated
signals from baseband or IF directly to RF. With high-performance and superior-linearity , TRF3705 is an ideal
device to up-convert to RF frequencies of 300 MHz through 4 GHz. With appropriate matching network, optimal
performance can be obtained. The modulator is implemented as a double-balanced mixer.
TRF3705 has a RF output block which consists of a differential-to-single-ended converter that is capable of
directly driving a single-ended 50-Ω load. The TRF3705 requires a 0.25-V common-mode voltage for optimal
linearity performance. With a fast power-down pin, TRF3705 can be used to reduce power dissipation in TDD
application
VCC
GND
BBIM
BBIP
GND
GND
24
23
22
21
20
19
7.2 Functional Block Diagram
PD
1
18
VCC
GND
2
17
GND
LOP
3
16
RFOUT
S
0/90
12
GND
GND
13
11
6
GND
GC
10
GND
BBQP
14
9
5
BBQM
GND
8
GND
GND
15
7
4
GND
LOM
7.3 Feature Description
7.3.1 Gain Control Feature
TRF3705 has a specific GC pin which is used for gain control. The GC pin is gain control digital input which is
internally pulled down. When driving low or left open, modulator is in low gain mode. With driving high externally,
the modulator is in high gain mode. This 1 bit gain step control feature offers a typical 3-dB gain increase in high
gain mode. If power optimization is desired, driving this pin low can easily put the modulator into low gain mode.
7.4 Device Functional Modes
7.4.1 Power Down Mode
TRF3705 features a PD pin to power down the modulator. The PD pin is internally pulled down. When the powerdown digital input pin is driven high, the device is off. This feature provides a fast power-down which can be used
to reduce power dissipation in time division duplexing applications.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
TRF3705 is a quadrature modulator for up-converting the in-phase (I) and the quadrature-phase (Q) signals to
radio frequency (RF) in the transmit chain. Typically, the device is used between the digital-to-analog converter
(DAC) and the RF power amplifier.
8.2 Typical Application
BBI
GND
GND
20
19
BBIP
BBIM
21
GND
22
15
5
14
6
13
GND
RFOUT
GND
6.8 pF
RF
Output
0.2 pF
GND
GND
GND
GND
GND
49.9 W
VCC
12
4
7
GC
Thermal Pad
11
GND
16
BBQP
49.9 W
3
10
LOM
17
BBQM
LOP
2
9
GND
18
GND
LO
Input
49.9 W
1
8
PD
23
24
VCC
49.9 W
49.9 W
BBQ
(1)
Pin 1 (PD) and Pin 6 (GC) are internally pulled down.
Figure 65. Typical Application Circuit
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Typical Application (continued)
8.2.1 Design Requirements
For this design example, use the parameters shown in Table 1.
Table 1. Pin Termination Requirements and Limitations
NAME
PIN NO
DESCRIPTION
BBQM
9
Base-band in-quadrature input: negative terminal. Input impedance is 8 KΩ//4.6 pF. Optimal linearity is
obtained if VCM is 0.25 V. Normally terminated in 50 Ω
BBQP
10
Base-band in-quadrature input: positive terminal. Input impedance is 8 KΩ//4.6 pF. Optimal linearity is
obtained if VCM is 0.25 V. Normally terminated in 50 Ω
LOP
3
Local oscillator input: positive terminal. This is preferred port when driving single ended. Normally AC
coupled and terminated in 50 Ω
LOM
4
Local oscillator input: negative terminal. When driving LO single-ended, normally AC coupled and
terminated in 50 Ω.
RFOUT
16
RF output. Normally using optimal matching circuits to match RF output to 50 Ω. Normally AC coupled.
GC
6
Gain control digital input. Internally pulled down. When driving high, get 3 dB gain increase of RF
output.
PD
1
Power down digital input. Internally pulled down. When driving high, the modulator is off.
VCC
18,24
3.3-V power supply. Can be tied together and source from a single clean supply. Each pin should be
properly RF bypassed and decoupled.
8.2.2 Detailed Design Procedure
8.2.2.1 Baseband Inputs
The baseband inputs consist of the in-phase signal (I) and the Quadrature-phase signal (Q). The I and Q lines
are differential lines that are driven in quadrature. The nominal drive level is 1-VPP differential on each branch.
The baseband lines are nominally biased at 0.25-V common-mode voltage (VCM); however, the device can
operate with a VCM in the range of 0 V to 0.5 V. The baseband input lines are normally terminated in 50 Ω,
though it is possible to modify this value if necessary to match to an external filter load impedance requirement.
8.2.2.2 LO Input
The LO inputs can be driven either single-ended or differentially. There is no significant performance difference
between either option with the exception of the sideband suppression. If driven single-ended, either input can be
used, but LOP (pin 3) is recommended for best broadband performance of sideband suppression. When driving
in single-ended configuration, simply ac-couple the unused port and terminate in 50 Ω. The comparison of the
sideband suppression performance is shown in Figure 71 for driving the LO single-ended from either pin and for
driving the LO input differentially.
8.2.2.3 RF Output
The RF output must be ac-coupled and can drive a 50-Ω load. The suggested output match provides the best
broadband performance across the frequency range of the device. It is possible to modify the output match to
optimize performance within a selected band if needed. The optimized matching circuits are to match the RF
output impedances to 50 Ω.
Figure 72 shows a slightly better OIP3 performance at the frequency above 1850 MHz with an 0.2-pF matching
capacitor.
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8.2.2.4 350-MHz Operation
A different matching circuit, as shown in Figure 66, could also be applied to improve the performance for the
frequency from 300 MHz to 400 MHz.
PD
180 pF 40 nH
LO
Input
GND
LOP
2.2 pF
LOM
49.9 W
GND
GC
1
18
2
17
3
16
4
15
5
14
6
13
VCC
GND
39 pF
RF
Output
RFOUT
18 pF
GND
GND
GND
Figure 66. Matching Components for Operation Centered at 350 MHz
Figure 73 and Figure 74 show a slight improvement in OIP3 performance at frequencies above 1850 MHz with
an 0.2-pF matching capacitor.
8.2.2.5 DAC to Modulator Interface Network
For optimum linearity and dynamic range, a digital-to-analog converter (DAC) can interface directly with the
TRF3705 modulator. It is imperative that the common-mode voltage of the DAC and the modulator baseband
inputs be properly maintained. With the proper interface network, the common-mode voltage of the DAC can be
translated to the proper common-mode voltage of the modulator. The TRF3705 common-mode voltage is
typically 0.25 V, and is ideally suited to interface with the DAC3482/3484 (DAC348x) family because the
common-mode voltages of both devices are the same; there is no translation network required. The interface
network is shown in Figure 67.
LO
50 W
50 W
50 W
50 W
DAC348x
0/90
50 W
50 W
50 W
50 W
S
TRF3705
Figure 67. DAC348x Interface with the TRF3705 Modulator
The DAC348x requires a load resistor of 25 Ω per branch to maintain its optimum voltage swing of 1-VPP
differential with a 20-mA max current setting. The load of the DAC is separated into two parallel 50-Ω resistors
placed on the input and output side of the low-pass filter. This configuration provides the proper resistive load to
the DAC while also providing a convenient 50-Ω source and load termination for the filter.
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8.2.2.6 DAC348x with TRF3705 Modulator Performance
The combination of the DAC348x driving the TRF3705 modulator yields excellent system parameters suitable for
high-performance applications. As an example, the following sections illustrate the typical modulated adjacent
channel power ratio (ACPR) for common telecom standards and bands. These measurements were taken on the
DAC348x evaluation board.
8.2.2.6.1 WCDMA
The adjacent channel power ratio (ACPR) performance using a single-carrier WCDMA signal in the UMTS band
is shown in Figure 68.
Figure 68. Single-Carrier WCDMA ACPR, IF = 30 MHz, LO Frequency = 2110 MHz
A marginal improvement in OIP3 and output noise performance can be observed by increasing the LO drive
power, resulting in slightly improved ACPR performance. The ACPR performance versus LO drive level is plotted
in Figure 75 across common frequencies to illustrate the amount of improvement that is possible.
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8.2.2.6.2 LTE
ACPR performance using a 10 MHz LTE signal in the 700-MHz band is shown in Figure 69.
Figure 69. 10 MHz LTE ACPR, IF = 30 MHz, LO Frequency = 718 MHz
8.2.2.6.3 MC-GSM
ACPR performance using a four-carrier MC-GSM signal in the 1800-MHz band is shown in Figure 70.
Figure 70. Four-Carrier MC-GSM, IF = 30 MHz ACPR, LO Frequency = 1812 MHz
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8.2.3 Application Curves
0
34
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
−10
LOP_SE
LOM_SE
LO_Diff
32
30
26
OIP3 (dBm)
Unadjusted SBS (dB)
28
−20
−30
24
22
20
−40
18
16
−50
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
14
12
−60
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
10
4000
0
500
1000
With 0.2 pF cap
Without 0.2 pF cap
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G067
G068
Figure 71. Unadjusted Sideband Suppression (SBS) vs LO
Drive Options
Figure 72. OIP3 with and without a Shunt 0.2-pF Matching
Capacitor at the RF Port
40
4
TA = −40°C
TA = 25°C
TA = 85°C
2
35
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
TA = −40°C
TA = 25°C
TA = 85°C
30
OIP3 (dBm)
Output Power (dBm)
0
−2
−4
25
20
−6
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
−8
−10
200
250
300
350
400
Frequency (MHz)
450
15
10
200
500
250
300
350
400
Frequency (MHz)
G069
450
500
G070
Figure 73. Output Power with 350-MHz Matching Circuit
Figure 74. OIP3 with 350-MHz Matching Circuit
−75
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
Adjacent Channel Power ratio (dBc)
−76
748 MHz
942.5 MHz
1960 MHz
2140 MHz
2600 MHz
−77
−78
−79
−80
−81
−5
0
5
LO Power (dBm)
10
15
G071
Figure 75. Single-Carrier WCDMA ACPR Performance vs LO Power
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9 Power Supply Recommendations
The TRF3705 is powered by supplying a nominal 3.3 V to pins 18 and 24. These supplies can be tied together
and sourced from a single clean supply. Proper RF bypassing should be placed close to each power supply pin.
Ground pin connections should have at least one ground via close to each ground pin to minimize ground
inductance. The PowerPAD™ must be tied to ground, preferably with the recommended ground via pattern to
provide a good thermal conduction path to the alternate side of the board and to provide a good RF ground for
the device. (Refer to Layout Guidelines for additional information.)
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10 Layout
Populated RoHS-compliant evaluation boards are available for testing the TRF3705 as a stand-alone device.
Contact your local TI representative for information on ordering these evaluation modules, or see the TRF3705
product folder on the TI website. In addition, the TRF3705 can be evaluated with the DAC348x (quad/dual 16-bit,
1.25GSPS) EVM driving the baseband inputs through a seamless interface at 0.25V common-mode voltage.
10.1 Layout Guidelines
The TRF3705 device is fitted with a ground slug on the back of the package that must be soldered to the printed
circuit board (PCB) ground with adequate ground vias to ensure a good thermal and electrical connection. The
recommended via pattern and ground pad dimensions are shown in Figure 76. The recommended via diameter
is 10 mils (0.10 in or 0,25 mm). The ground pins of the device can be directly tied to the ground slug pad for a
low-inductance path to ground. Additional ground vias may be added if space allows.
Decoupling capacitors at each of the supply pins are strongly recommended. The value of these capacitors
should be chosen to provide a low-impedance RF path to ground at the frequency of operation. Typically, the
value of these capacitors is approximately 10 pF or lower.
The device exhibits symmetry with respect to the quadrature input paths. It is recommended that the PCB layout
maintain this symmetry in order to ensure that the quadrature balance of the device is not impaired. The I/Q input
traces should be routed as differential pairs and the respective lengths all kept equal to each other. On the RF
traces, maintain proper trace widths to keep the characteristic impedance of the RF traces at a nominal 50 Ω.
10.2 Layout Example
Æ 0,254
0,508
1,16
2,45
2,45
0,508
1,16
Note:
Dimensions are in millimeters (mm).
Figure 76. PCB Ground Via Layout Guide
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Definition of Specifications
11.1.1.1 Carrier Feedthrough
This specification measures the power of the local oscillator component that is present at the output spectrum of
the modulator. The performance depends on the dc offset balance within the baseband input lines. Ideally, if all
of the baseband lines were perfectly matched, the carrier (that is, the LO) would be naturally suppressed;
however, small dc offset imbalances within the device allow some of the LO component to feed through to the
output. This parameter is expressed as an absolute power in dBm, and is independent of the RF output power
and the injected LO input power.
It is possible to adjust the baseband dc offset balance to suppress the output carrier component. Devices such
as the DAC348x DAC family have dc offset adjustment capabilities specifically for this function. The Adjusted
Carrier Feedthrough graphs (see Figure 33 through Figure 38) optimize the performance at the center of the
band at room temperature. Then, with the adjusted dc offset values held constant, the parameter is measured
over the frequency band and across the temperature extremes. The typical performance plots provide an
indication of how well the adjusted carrier suppression can be maintained over frequency and temperature with
only one calibration point.
11.1.1.2 Sideband Suppression
This specification measures the suppression of the undesired sideband at the output of the modulator relative to
the desired sideband. If the amplitude and phase within the I and Q branch of the modulator were perfectly
matched, the undesired sideband (or image) would be naturally suppressed. Amplitude and phase imbalance in
the I and Q branches result in the increase of the undesired sideband. This parameter is measured in dBc
relative to the desired sideband.
It is possible to adjust the relative amplitude and phase balance within the baseband lines to suppress the
unwanted sideband. Devices such as the DAC348x DAC family have amplitude and phase adjustment control
specifically for this function. The Adjusted Sideband Suppression graphs (refer to Figure 39 through Figure 44)
optimize the performance at the center of the band at room temperature. Then, with the adjusted amplitude and
phase values held constant, the parameter is measured over the frequency band and across the temperature
extremes. The performance plots provide an indication of how well the adjusted sideband suppression can be
maintained over frequency and temperature with only one calibration point.
11.1.1.3 Output Noise
The output noise specifies the absolute noise power density that is output from the RFOUT pin (pin 16). This
parameter is expressed in dBm/Hz. This parameter, in conjunction with the OIP3 specification, indicates the
dynamic range of the device. In general, at high output signal levels the performance is limited by the linearity of
the device; at low output levels, on the other hand, the performance is limited by noise. As a result of the higher
gain and output power of the TRF3705 compared to earlier devices, it is expected that the noise density is
slightly higher as well. With its increased gain and high OIP3 performance, the overall dynamic range of the
TRF3705 is maintained at exceptional levels.
11.1.1.4 Definition of Terms
A simulated output spectrum with two tones is shown in Figure 77, with definitions of various terms used in this
data sheet.
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IM
es
ire
d
Si
gn
al
D
U
nw
an
te
d
Si
de
ba
nd
3
2n
d
rd
O
O
rd
er
rd
er
IM
Device Support (continued)
=
=
H
nd
L
nd
L
rd
F2
F1
22F O
= +L
H
2
rd
O
F 3 F BB + L
=
1
F2 BB F2
F
= F1
LO
)+
F1 = 2
1
BB
-F
F3
F2
LO
B2
B2
B
(F
B
(F
+
FB
LO
)+
Baseband Frequency
RF Frequency
3rd Order Intermodulation Product Frequency (High Side / Low Side)
2nd Order Intermodulation Product Frequency (High Side / Low Side)
Local Oscillator Frequency
Lower Sideband Frequency
B1
B1
B
-F 2
B
LO F B
–
=
B1 LO
LS 2 =
B
LS
FBBn =
Fn
=
F3rdH/L =
F2ndH/L =
LO =
LSBn =
f
Figure 77. Graphical Illustration of Common Terms
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
32
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Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: TRF3705
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TRF3705IRGER
ACTIVE
VQFN
RGE
24
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TRF3705
IRGE
TRF3705IRGET
ACTIVE
VQFN
RGE
24
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
TRF3705
IRGE
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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