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TRF37A32, TRF37B32, TRF37C32
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
TRF37x32 Dual Down Converter Mixer With Integrated IF AMP
1 Features
3 Description
•
The TRF37x32 is a wideband dual down converter
mixer with integrated IF amplifier. The device
employs integrated baluns for single ended RF and
LO inputs. The IF amplifier operates from 30 MHz to
600 MHz in an open collector topology to support a
variety of IF frequencies and bandwidths. The
TRF37x32 provides excellent mixer linearity and
noise performance and offers good isolation between
channels for operation with diversity applications. The
device operates with low power dissipation and
further provides an option for a low power mode for
power sensitive applications. Each channel can be
independently powered down with fast response
times to allow operation in time domain duplexed
(TDD) applications.
1
•
•
•
•
•
•
•
•
•
•
•
Device Family Supports Wide RF Input Range
– TRF37A32: 400 - 1700 MHz
– TRF37B32: 700 - 2700 MHz
– TRF37C32: 1700 - 3800 MHz
Gain: 10 dB
Noise Figure: 9.5 dB
Input IP3: 30 dBm
500 mW per Channel Power Dissipation
Single Ended RF Input
IF Frequency Range from 30 MHz to 600 MHz
45 dB Isolation between Channels
Low Power Mode Option
Independent Power Down Control
Single 3.3V Supply
No External Matching Required
Device Information(1)
PART NUMBER
TRF37B32
2 Applications
•
•
•
•
•
PACKAGE
BODY SIZE (NOM)
WQFN (32)
5.00mm x 5.00mm
TRF37A32
TRF37C32
Wireless Infrastructure
– WCDMA, TD-SCDMA
– LTE, TD-LTE
– Multicarrier GSM (MC-GSM)
Point-to-Point Microwave
Software Defined Radios (SDR)
Radar Receiver
Satellite Communications
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
IIP3 Performance Across Frequency
4 Simplified Schematic
40
+3.3V
+3.3V
+3.3V
'A32
'B32
'C32
38
36
RFINA
IIP3 (dBm)
10pF
VCC
270nH
VCC_LO
34
IFOUTAP
IFOUTAN
0.047uF
10pF
RFINB
IFOUTBP
IFOUTBN
10pF
32
30
28
26
24
22
LO
PD
REXT
LPM
2.6k:
20
400
800
1200 1600 2000 2400 2800 3200 3600
RF Frequency (MHz)
D001
D001
TRF37A/B/C32
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TRF37A32, TRF37B32, TRF37C32
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
8
1
1
1
1
2
3
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Electrical Characteristics, TRF37A32 ....................... 6
Electrical Characteristics, TRF37B32 ....................... 7
Electrical Characteristics, TRF37C32 ....................... 8
Timing Requirements ................................................ 9
Typical Characteristics (TRF37A32) ....................... 10
Typical Characteristics (TRF37B32) ..................... 14
Typical Characteristics (TRF37C32)..................... 18
Detailed Description ............................................ 22
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
22
22
23
24
Applications and Implementation ...................... 25
9.1 Application Information............................................ 25
9.2 Typical Application ................................................. 25
10 Power Supply Recommendations ..................... 27
10.1 Power Up Sequence ............................................. 27
11 Layout................................................................... 28
11.1 Layout Guidelines ................................................. 28
11.2 Layout Example .................................................... 28
12 Device and Documentation Support ................. 29
12.1
12.2
12.3
12.4
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
29
29
29
29
13 Mechanical, Packaging, and Orderable
Information ........................................................... 29
5 Revision History
Changes from Original (May 2014) to Revision A
Page
•
Added Typical Characteristics, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, and Layout section ...................................................... 1
•
Replaced the Handling Ratings table with the ESD Ratings table ......................................................................................... 5
2
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Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
TRF37A32, TRF37B32, TRF37C32
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SLASE37A – MAY 2014 – REVISED DECEMBER 2014
6 Pin Configuration and Functions
IFA_BT
VCCA
GND
IFOUTAP
GND
IFOUTAN
GND
NC
32
31
30
29
28
27
26
25
RTV PACKAGE
(TOP VIEW)
PDA
1
24
NC
RFINA
2
23
NC
NC
3
22
GND
VCC_LO
4
21
LO
REXT
5
20
NC
NC
6
19
GND
RFINB
7
18
NC
PDB
8
17
LPM
TRF37x32
(Top View)
13
14
15
GND
IFOUTBN
GND
16
12
IFOUTBP
NC
11
10
VCCB
GND
9
IFB_BT
EXPOSED PADDLE ON BOTTOM
OF PACKAGE, PIN 0
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
PDA
1
Digital Input
Power down for channel A (1 = PD; 0 or open = powered)
RFINA
2
Analog Input
RF input for channel A
NC
3
N/A
VCC_LO
4
Supply
REXT
5
Bias
External bias resistor
NC
6
N/A
No connect
RFINB
7
Analog Input
RF input for channel B
PDB
8
Digital Input
Power down for channel B (1 = PD; 0 or open = powered)
IFB_BT
9
N/A
VCCB
10
Supply
Power supply for channel B
GND
11
Ground
Ground
IFOUTBP
12
Analog
Output
IF out channel B: positive
GND
13
Ground
Ground
IFOUTBN
14
Analog
Output
IF out channel B: negative
GND
15
Ground
Ground
NC
16
N/A
LPM
17
Digital Input
NC
18
N/A
GND
19
Ground
NC
20
N/A
LO
21
Analog Input
No connect
VCC supply for the LO circuitry
IF channel B bias control; leave unconnected
No connect
Low power mode (0 = normal; 1 = low power)
No connect
Ground
No connect
Local oscillator (LO) input
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
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3
TRF37A32, TRF37B32, TRF37C32
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
www.ti.com
Pin Functions (continued)
PIN
NAME
NO.
I/O
DESCRIPTION
GND
22
Ground
NC
23
N/A
No connect
NC
24
N/A
No connect
NC
25
N/A
No connect
GND
26
Ground
Ground
IFOUTAN
27
Analog
Output
IF out channel A: negative
GND
28
Ground
Ground
IFOUTAP
29
Analog
Output
IF out channel A: positive
GND
30
Ground
Ground
VCCA
31
Supply
Power supply for channel A
IFA_BT
32
N/A
4
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Ground
IF channel A bias control; leave unconnected
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
TRF37A32, TRF37B32, TRF37C32
www.ti.com
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Input voltage
–0.3
3.6
V
Storage temperature, TSTG
–40
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
V(ESD)
Electrostatic discharge
Human-body model (HBM), per
ANSI/ESDA/JEDEC JS-001 (1)
All pins except
XIFOUTAP, IFOUTAN,
IFOUTBP, and IFOUTBN
±2500
Pins XIFOUTAP,
IFOUTAN, IFOUTBP, and
IFOUTBN (2)
±100
Charged-device model (CDM), per JEDEC specification JESD22C101 (3)
(1)
(2)
(3)
UNIT
V
±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
High Linearity IFOUT pins are susceptible to low voltage HBM damage.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
Operating virtual junction temperature range, TJ
NOM
–40
MAX
UNIT
125
°C
7.4 Thermal Information
THERMAL METRIC (1)
RTV
32 PINS
RθJA
Junction-to-ambient thermal resistance
32.3
RθJCtop
Junction-to-case (top) thermal resistance
19.8
RθJB
Junction-to-board thermal resistance
5.9
ψJT
Junction-to-top characterization parameter
0.2
ψJB
Junction-to-board characterization parameter
5.9
RθJCbot
Junction-to-case (bottom) thermal resistance
1.3
(1)
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
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5
TRF37A32, TRF37B32, TRF37C32
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
www.ti.com
7.5 Electrical Characteristics, TRF37A32
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
3.3
3.45
UNIT
DC Parameters
VCC
Supply Voltage
ICC
Supply Current
FLO = 750 MHz
3.15
280
mA
Pdiss
Total Power Dissipation
FLO = 750 MHz
0.92
W
Power Down Current
V
2
mA
1700
MHz
RF Frequency Range
FRF
Frequency Range
400
RF Specifications
G
Gain
FRF = 950 MHz (LSI)
9.6
dB
Gvar
Gain Variation over Frequency
within any 200 MHz Band
0.5
dB
SSB Noise Figure
FRF = 950 MHz (LSI)
9.6
dB
NF
SSB Noise Figure with Blocker
5 dBm blocker signal
Δf > 50 MHz
17
dB
IIP3
Input 3rd Order Intercept Point
FRF = 950 MHz (LSI),
Fspacing = 20 MHz
26
dBm
OIP3
Output 3rd Order Intercept Point
FRF = 950 MHz (LSI),
Fspacing = 20 MHz
35.6
dBm
OIP2
Output 2nd Order Intercept Point
FRF = 950 MHz (LSI)
65
dBm
IP1dB
Input 1 dB Compression Point
FRF = 950 MHz (LSI)
11
dBm
ZIN
Input Impedance
RLi
Input Return Loss
FRF = 800 - 1400 MHz (LSI)
50
Ω
15
dB
LO Input
PLO
LO Drive Level
FLO
LO Frequency Range
ZIN
Input Impedance
RLi
Input Return Loss
–3
0
600
FRF = 750 - 1150 MHz
6
dBm
1400
MHz
50
Ω
15
dB
mA
Low Power Mode: LPM = 1
ICC
Supply Current
FLO = 750 MHz
200
Pdiss
Total Power Dissipation
FLO = 750 MHz
0.66
W
G
Gain
FRF = 950 MHz (LSI)
9.2
dB
NF
SSB Noise Figure
FRF = 950 MHz (LSI)
9.6
dB
IIP3
Input 3rd Order Intercept Point
FRF = 950 MHz (LSI),
Fspacing = 20 MHz
26
dBm
IP1dB
Input 1 dB Compression Point
FRF = 950 MHz (LSI)
11
dBm
Channel Isolation
Drive RFinA/B
IFoutA/B-IFoutB/A
FRF = 950 MHz
50
dB
RF to IF Isolation
FRF = 950 MHz
20
dB
LO to RF Leakage
PLO = 0 dBm
–55
dBm
LO to IF Leakage
PLO = 0 dBm
–45
dBm
2x2 Spurious Product
2RF - 2LO
65
dBc
3x3 Spurious Product
3RF - 3LO
70
dBc
Isolation
Spurious
IF Output
ZL
Differential Output Impedance Load
FIF
Frequency Range
1 dB corner frequency
DC Bias Range
Externally supplied DC bias through
RF choke
6
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Ω
200
30
600
3.3
MHz
V
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
TRF37A32, TRF37B32, TRF37C32
www.ti.com
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
7.6 Electrical Characteristics, TRF37B32
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
3.3
3.45
UNIT
DC Parameters
VCC
Supply Voltage
ICC
Supply Current
FLO = 1750 MHz
3.15
305
mA
Pdiss
Total Power Dissipation
FLO = 1750 MHz
1
W
Power Down Current
V
2
mA
2700
MHz
RF Frequency Range
FRF
Frequency Range
700
RF Specifications
G
Gain
FRF = 1950 MHz (LSI)
10
dB
Gvar
Gain Variation over Frequency
within any 200 MHz Band
0.5
dB
SSB Noise Figure
FRF = 1950 MHz (LSI)
9.2
dB
NF
SSB Noise Figure with Blocker
5 dBm blocker signal
Δf > 50 MHz
15.5
dB
IIP3
Input 3rd Order Intercept Point
FRF = 1950 MHz (LSI),
Fspacing = 20 MHz
32
dBm
OIP3
Output 3rd Order Intercept Point
FRF = 1950 MHz (LSI),
Fspacing = 20 MHz
42
dBm
OIP2
Output 2nd Order Intercept Point
FRF = 1950 MHz (LSI)
70
dBm
IP1dB
Input 1 dB Compression Point
FRF = 1950 MHz (LSI)
10.8
dBm
ZIN
Input Impedance
RLi
Input Return Loss
FRF = 1700 - 2700 MHz (LSI)
50
Ω
10
dB
LO Input
PLO
LO Drive Level
FLO
LO Frequency Range
ZIN
Input Impedance
RLi
Input Return Loss
–3
0
500
FRF = 1500 - 2450 MHz
6
dBm
2900
MHz
50
Ω
15
dB
mA
Low Power Mode: LPM = 1
ICC
Supply Current
FLO = 1750 MHz
220
Pdiss
Total Power Dissipation
FLO = 1750 MHz
0.73
W
G
Gain
FRF = 1950 MHz (LSI)
9.2
dB
NF
SSB Noise Figure
FRF = 1950 MHz (LSI)
9.2
dB
IIP3
Input 3rd Order Intercept Point
FRF = 1950 MHz (LSI),
Fspacing = 20 MHz
23
dBm
IP1dB
Input 1 dB Compression Point
FRF = 1950 MHz (LSI)
10.7
dBm
Channel Isolation
Drive RFinA/B
IFoutA/B-IFoutB/A
FRF = 1950 MHz
RF to IF Isolation
FRF = 1950 MHz
22
dB
LO to RF Leakage
PLO = 0 dBm
–50
dBm
LO to IF Leakage
PLO = 0 dBm
–42
dBm
2x2 Spurious Product
2RF - 2LO
70
dBc
3x3 Spurious Product
3RF - 3LO
75
dBc
Isolation
45
dB
Spurious
IF Output
ZL
Differential Output Impedance Load
FIF
Frequency Range
1 dB corner frequency
DC Bias Range
Externally supplied DC bias through
RF choke
Ω
200
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
30
600
MHz
3.3
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V
7
TRF37A32, TRF37B32, TRF37C32
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
www.ti.com
7.7 Electrical Characteristics, TRF37C32
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
3.3
3.45
UNIT
DC Parameters
VCC
Supply Voltage
ICC
Supply Current
FLO = 2300 MHz
3.15
325
mA
Pdiss
Total Power Dissipation
FLO = 2300 MHz
1.1
W
Power Down Current
V
2
mA
3800
MHz
RF Frequency Range
FRF
Frequency Range
1700
RF Specifications
G
Gain
FRF = 2500 MHz (LSI)
9.8
dB
Gvar
Gain Variation over Frequency
within any 200 MHz Band
0.5
dB
SSB Noise Figure
FRF = 2500 MHz (LSI)
9.9
dB
NF
SSB Noise Figure with Blocker
5 dBm blocker signal
Δf > 50 MHz
17.5
dB
IIP3
Input 3rd Order Intercept Point
FRF = 2500 MHz (LSI)
Fspacing = 20 MHz
29
dBm
OIP3
Output 3rd Order Intercept Point
FRF = 2500 MHz (LSI)
Fspacing = 20 MHz
38.8
dBm
OIP2
Output 2nd Order Intercept Point
FRF = 2500 MHz (LSI)
65
dBm
IP1dB
Input 1 dB Compression Point
FRF = 2500 MHz (LSI)
11.5
dBm
ZIN
Input Impedance
50
Ω
RLi
Input Return Loss
8
dB
LO Input
PLO
LO Drive Level
FLO
LO Frequency Range
ZIN
Input Impedance
RLi
Input Return Loss
–3
0
1500
FRF = 2800 - 3400 MHz
6
dBm
3600
MHz
50
Ω
10
dB
mA
Low Power Mode: LPM = 1
ICC
Supply Current
FLO = 2300 MHz
230
Pdiss
Total Power Dissipation
FLO = 2300 MHz
0.76
W
G
Gain
FRF = 2500 MHz (LSI)
9.2
dB
NF
SSB Noise Figure
FRF = 2500 MHz (LSI)
9.9
dB
IIP3
Input 3rd Order Intercept Point
FRF = 2500 MHz (LSI),
Fspacing = 20 MHz
22
dBm
IP1dB
Input 1 dB Compression Point
FRF = 2500 MHz (LSI)
11.5
dBm
Channel Isolation
Drive RFinA/B
IFoutA/B-IFoutB/A
FRF = 2500 MHz
RF to IF Isolation
FRF = 2500 MHz
21
dB
LO to RF Leakage
PLO = 0 dBm
–55
dBm
LO to IF Leakage
PLO = 0 dBm
–45
dBm
2x2 Spurious Product
2RF - 2LO
65
dBc
3x3 Spurious Product
3RF - 3LO
70
dBc
Isolation
48
dB
Spurious
IF Output
ZL
Differential Output Impedance Load
FIF
Frequency Range
1 dB corner frequency
DC Bias Range
Externally supplied DC bias through
RF choke
8
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Ω
200
30
600
3.3
MHz
V
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
TRF37A32, TRF37B32, TRF37C32
www.ti.com
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
7.8 Timing Requirements
MIN
TYP
MAX
UNIT
Power Control
PD
Turn-on Time
PD = low to 90% final output power
100
ns
Turn-off Time
PD = high to initial output power –30 dB
100
ns
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Product Folder Links: TRF37A32 TRF37B32 TRF37C32
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TRF37A32, TRF37B32, TRF37C32
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
www.ti.com
7.9 Typical Characteristics (TRF37A32)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
11.0
36.0
Dash = LPM
HSI
LSI
10.5
10.0
Dash = LPM
HSI
LSI
34.0
32.0
IIP3 (dBm)
Gain (dB)
9.5
9.0
8.5
8.0
30.0
28.0
26.0
7.5
24.0
7.0
22.0
6.5
6.0
400
600
800
1000
1200
1400
RF Frequency (MHz)
1600
20.0
400
1800
1000
1200
1400
RF Frequency (MHz)
1600
1800
14.0
13.5 Dash = LPM
HSI
13.0
LSI
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
400
600
800
D001
Figure 3. NF vs Frequency over H/LSI, LPM
1400
1600
D001
1000
1200
1400
RF Frequency (MHz)
1600
1800
D001
Figure 4. Input P1dB vs Frequency over H/LSI, LPM
90.0
1.1
Dash = LPM
HSI
LSI
85.0
-40 degC
25 degC
85 degC
1.0
Power Dissipation (W)
80.0
OIP2 (dBm)
800
1000
1200
RF Frequency (MHz)
Figure 2. IIP3 vs Frequency over H/LSI, LPM
P1dB (dB)
NF (dB)
Figure 1. Gain vs Frequency over H/LSI, LPM
14.0
13.5 Dash = LPM
HSI
13.0
LSI
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
400
600
800
600
D001
75.0
70.0
65.0
60.0
0.9
0.8
0.7
55.0
50.0
400
600
800
1000
1200
RF Frequency (MHz)
1400
Figure 5. OIP2 vs Frequency over H/LSI, LPM
10
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0.6
500
1600
D001
700
900
1100
1300
LO Frequency (MHz)
1500
D001
Figure 6. Power Dissipation vs Temperature, LPM
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
TRF37A32, TRF37B32, TRF37C32
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SLASE37A – MAY 2014 – REVISED DECEMBER 2014
Typical Characteristics (TRF37A32) (continued)
30.0
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
HSI
LSI
HSI
LSI
28.0
26.0
IIP3 (dBm)
Gain (dB)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
24.0
22.0
20.0
18.0
16.0
14.0
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
0
Figure 8. IIP3 vs IF Frequency over H/LSI
80.0
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
HSI
LSI
HSI
LSI
75.0
70.0
OIP2 (dBm)
NF (dB)
Figure 7. Gain vs IF Frequency over H/LSI
65.0
60.0
55.0
50.0
45.0
40.0
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
0
Figure 9. NF vs IF Frequency over H/LSI
60.0
-35.0
55.0
-40.0
50.0
-45.0
45.0
-50.0
-55.0
-60.0
-65.0
-70.0
A-B Iso
RF-IF Iso
40.0
35.0
30.0
25.0
20.0
LO-IF Leakage
LO-RF Leakage
-75.0
-80.0
500
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
Figure 10. OIP2 vs IF Frequency over H/LSI
-30.0
RF Isolation (dB)
LO Leakage (dBm)
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
700
900
1100
1300
LO Frequency (MHz)
1500
Figure 11. LO-IF/RF Leakage vs Frequency
15.0
1700
D001
10.0
400
600
800
1000
1200
RF Frequency (MHz)
1400
1600
D001
Figure 12. A-B Channel and RF-IF Isolation
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Product Folder Links: TRF37A32 TRF37B32 TRF37C32
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TRF37A32, TRF37B32, TRF37C32
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
www.ti.com
Typical Characteristics (TRF37A32) (continued)
11.0
11.0
10.5
10.5
10.0
10.0
9.5
9.5
9.0
9.0
Gain (dB)
Gain (dB)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
8.5
8.0
7.5
6.5
1600
6.0
400
1800
Figure 13. Gain vs Frequency over Temperature (HSI/LSI)
800
1000
1200
1400
RF Frequency (MHz)
1600
1800
Figure 14. Gain vs Frequency over LO Drive (H/LSI)
Solid/Dash = LSI/HSI
-3 dBm
0 dBm
6 dBm
32.0
34.0
34.0
30.0
30.0
IIP3 (dBm)
IIP3 (dBm)
600
36.0
Solid/Dash = LSI/HSI
-40 degC
25 degC
85 degC
32.0
28.0
26.0
28.0
26.0
24.0
24.0
22.0
22.0
600
800
1000
1200
1400
RF Frequency (MHz)
1600
20.0
400
1800
14.0
13.5 Solid/Dash = LSI/HSI
-40 degC
13.0
25 degC
12.5
85 degC
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
400
600
800
1000
1200
1400
RF Frequency (MHz)
1600
1800
Figure 17. NF vs Frequency over Temperature (HSI/LSI)
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600
800
1000
1200
1400
RF Frequency (MHz)
1600
1800
Figure 16. IIP3 vs Frequency over LO Drive (H/LSI)
NF (dB)
Figure 15. IIP3 vs Frequency over Temperature (HSI/LSI)
NF (dB)
8.0
7.0
36.0
12
8.5
7.5
Solid/Dash = LSI/HSI
-40 degC
25 degC
6.5
85 degC
6.0
400
600
800
1000
1200
1400
RF Frequency (MHz)
7.0
20.0
400
Solid/Dash = LSI/HSI
-3 dBm
0 dBm
6 dBm
14.0
13.5 Solid/Dash = LSI/HSI
-3 dBm
13.0
0 dBm
12.5
6 dBm
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
400
600
800
1000
1200
1400
RF Frequency (MHz)
1600
1800
Figure 18. NF vs Frequency over LO Drive (H/LSI)
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
TRF37A32, TRF37B32, TRF37C32
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SLASE37A – MAY 2014 – REVISED DECEMBER 2014
Typical Characteristics (TRF37A32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
0.0
14.0
-5.0
Input Return Loss (dB)
P1dB (dBm)
13.5 Solid/Dash = LSI/HSI
-40 degC
13.0
25 degC
85 degC
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
-10.0
-15.0
-20.0
-25.0
LO
RF
8.5
8.0
400
600
800
1000
1200
1400
RF Frequency (MHz)
1600
-30.0
400
1800
Figure 19. Input P1dB vs Frequency over Temperature
(HSI/LSI)
OIP2 (dBm)
OIP2 (dBm)
D001
Solid/Dash = LSI/HSI
-3 dBm
0 dBm
6 dBm
80.0
70.0
65.0
75.0
70.0
65.0
60.0
60.0
55.0
55.0
600
800
1000
1200
1400
RF Frequency (MHz)
1600
50.0
400
1800
Figure 21. OIP2 vs Frequency over Temperature (HSI/LSI)
90.0
85.0
85.0
80.0
80.0
75.0
70.0
65.0
60.0
600
800
1000
1200
1400
RF Frequency (MHz)
1600
1800
Figure 22. OIP2 vs Frequency over LO Drive (H/LSI)
90.0
3x3 Spurious (dBc)
2x2 Spurious (dBc)
1600
85.0
75.0
50.0
400
1400
90.0
Solid/Dash = LSI/HSI
-40 degC
85.0
25 degC
85 degC
80.0
55.0
800
1000
1200
RF Frequency (MHz)
Figure 20. RF/LO Input Return Loss
90.0
50.0
400
600
75.0
70.0
65.0
60.0
-40 degC
25 degC
85 degC
600
800
-40 degC
25 degC
85 degC
55.0
1000
1200
1400
RF Frequency (MHz)
1600
1800
Figure 23. 2 x 2 Spurious over Temperature (H/LSI)
50.0
400
600
800
1000
1200
1400
RF Frequency (MHz)
1600
1800
D001
Figure 24. 3 x 3 Spurious over Temperature (H/LSI)
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Product Folder Links: TRF37A32 TRF37B32 TRF37C32
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TRF37A32, TRF37B32, TRF37C32
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
www.ti.com
7.10 Typical Characteristics (TRF37B32)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 1950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
40.0
13.0
Dash = LPM
HSI
LSI
12.5
12.0
Dash = LPM
HSI
LSI
36.0
38.0
11.5
34.0
IIP3 (dBm)
Gain (dB)
11.0
10.5
10.0
9.5
9.0
32.0
30.0
28.0
26.0
8.5
24.0
8.0
7.5
22.0
7.0
600
20.0
600
1000
1400
1800
2200
RF Frequency (MHz)
2600
Dash = LPM
HSI
LSI
13.0
Dash = LPM
HSI
LSI
11.0
10.0
9.0
8.0
1000
1400
1800
2200
RF Frequency (MHz)
7.0
600
2600
1000
1400
1800
2200
RF Frequency (MHz)
D001
2600
D001
Figure 28. Input P1dB vs Frequency over H/LSI, LPM
1.4
Dash = LPM
HSI
LSI
85.0
Dash = LPM
-40 degC
25 degC
85 degC
1.3
Power Dissipation (W)
80.0
OIP2 (dBm)
D001
12.0
Figure 27. NF vs Frequency over H/LSI, LPM
75.0
70.0
65.0
60.0
1.2
1.1
1.0
0.9
0.8
0.7
55.0
0.6
1000
1400
1800
2200
RF Frequency (MHz)
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0.5
500
2600
Figure 29. OIP2 vs Frequency over H/LSI, LPM
14
2600
Figure 26. IIP3 vs Frequency over H/LSI, LPM
90.0
50.0
600
1400
1800
2200
RF Frequency (MHz)
14.0
P1dB (dBm)
NF (dB)
Figure 25. Gain vs Frequency over H/LSI, LPM
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
600
1000
D001
D001
900
1300
1700
2100
LO Frequency (MHz)
2500
2900
D001
Figure 30. Power Dissipation vs Temperature, LPM
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
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SLASE37A – MAY 2014 – REVISED DECEMBER 2014
Typical Characteristics (TRF37B32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 1950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
12.0
38.0
HSI
LSI
11.5
34.0
10.5
32.0
10.0
30.0
IIP3 (dBm)
Gain (dB)
11.0
HSI
LSI
36.0
9.5
9.0
8.5
28.0
26.0
24.0
8.0
22.0
7.5
20.0
7.0
18.0
6.5
16.0
6.0
14.0
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
0
Figure 32. IIP3 vs IF Frequency over H/LSI
90.0
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
HSI
LSI
HSI
LSI
85.0
80.0
75.0
OIP2 (dBm)
NF (dB)
Figure 31. Gain vs IF Frequency over H/LSI
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
70.0
65.0
60.0
55.0
50.0
45.0
40.0
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
0
Figure 33. NF vs IF Frequency over H/LSI
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
Figure 34. OIP2 vs IF Frequency over H/LSI
-20.0
60.0
-25.0
55.0
-30.0
RF-IF Iso
A-B Iso
50.0
RF Isolation (dB)
LO Leakage (dBm)
-35.0
-40.0
-45.0
-50.0
-55.0
-60.0
45.0
40.0
35.0
30.0
25.0
-65.0
20.0
-70.0
LO-IF Leakage
LO-RF Leakage
-75.0
-80.0
500
1000
1500
2000
LO Frequency (MHz)
2500
Figure 35. LO-IF/RF Leakage vs Frequency
15.0
3000
D001
10.0
600
1000
1400
1800
2200
RF Frequency (MHz)
2600
D001
Figure 36. A-B Channel and RF-IF Isolation
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TRF37A32, TRF37B32, TRF37C32
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
www.ti.com
Typical Characteristics (TRF37B32) (continued)
13.0
13.0
12.5 Solid/Dash = LSI/HSI
25 degC
12.0
-40 degC
85 degC
11.5
12.5 Solid/Dash = LSI/HSI
-3 dBm
12.0
0 dBm
6 dBm
11.5
11.0
11.0
Gain (dB)
Gain (dB)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 1950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
10.5
10.0
9.5
9.0
8.5
8.0
8.0
7.5
7.5
1000
1400
1800
2200
RF Frequency (MHz)
7.0
600
2600
1400
1800
2200
RF Frequency (MHz)
2600
40.0
Solid/Dash = LSI/HSI
-40 degC
25 degC
36.0
85 degC
34.0
Solid/Dash = LSI/HSI
-3 dBm
0 dBm
36.0
6 dBm
34.0
38.0
IIP3 (dBm)
38.0
32.0
30.0
28.0
32.0
30.0
28.0
26.0
26.0
24.0
24.0
22.0
22.0
20.0
600
1000
Figure 38. Gain vs Frequency over LO Drive (H/LSI)
40.0
IIP3 (dBm)
9.5
8.5
Figure 37. Gain vs Frequency over Temperature (HSI/LSI)
1000
1400
1800
2200
RF Frequency (MHz)
20.0
600
2600
14.0
13.5 Solid/Dash = LSI/HSI
-40 degC
13.0
25 degC
12.5
85 degC
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
600
1000
1400
1800
2200
RF Frequency (MHz)
2600
Figure 41. NF vs Frequency over Temperature (HSI/LSI)
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1000
1400
1800
2200
RF Frequency (MHz)
2600
Figure 40. IIP3 vs Frequency over LO Drive (H/LSI)
NF (dB)
Figure 39. IIP3 vs Frequency over Temperature (HSI/LSI)
NF (dB)
10.0
9.0
7.0
600
16
10.5
14.0
13.5 Solid/Dash = LSI/HSI
-3 dBm
13.0
0 dBm
12.5
6 dBm
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
600
1000
1400
1800
2200
RF Frequency (MHz)
2600
Figure 42. NF vs Frequency over LO Drive (H/LSI)
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
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SLASE37A – MAY 2014 – REVISED DECEMBER 2014
Typical Characteristics (TRF37B32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 1950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
0.0
14.0
13.0
-5.0
Return Loss (dB)
P1dB (dBm)
12.0
11.0
10.0
9.0
Solid/Dash = LSI/HSI
-40 degC
25 degC
85 degC
8.0
7.0
600
LO
RF
1000
1400
1800
2200
RF Frequency (MHz)
-10.0
-15.0
-20.0
-25.0
-30.0
500
2600
Figure 43. Input P1dB vs Frequency over Temperature
(HSI/LSI)
1000
1500
2000
RF Frequency (MHz)
2500
3000
D001
Figure 44. RF/LO Input Return Loss
90.0
100.0
Solid/Dash = LSI/HSI
-40 degC
25 degC
85 degC
85.0
80.0
Solid/Dash = LSI/HSI
-3 dBm
0 dBm
6 dBm
95.0
90.0
0IP2 (dBm)
OIP2 (dBm)
85.0
75.0
70.0
65.0
80.0
75.0
70.0
65.0
60.0
60.0
55.0
55.0
50.0
600
50.0
600
1000
1400
1800
2200
RF Frequency (MHz)
2600
100.0
95.0
95.0
90.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
600
1000
80.0
75.0
70.0
65.0
55.0
1400
1800
2200
RF Frequency (MHz)
50.0
600
2600
-40 degC
25 degC
85 degC
1000
D001
Figure 47. 2 x 2 Spurious over Temperature (H/LSI)
2600
85.0
60.0
-40 degC
25 degC
85 degC
1400
1800
2200
RF Frequency (MHz)
Figure 46. OIP2 vs Frequency over LO Drive (H/LSI)
100.0
3x3 Spurious (dBc)
2x2 Spurious (dBc)
Figure 45. OIP2 vs Frequency over Temperature (HSI/LSI)
1000
1400
1800
2200
RF Frequency (MHz)
2600
D001
Figure 48. 3 x 3 Spurious over Temperature (H/LSI)
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TRF37A32, TRF37B32, TRF37C32
SLASE37A – MAY 2014 – REVISED DECEMBER 2014
www.ti.com
7.11 Typical Characteristics (TRF37C32)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 2500 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
40.0
13.0
Dash = LPM
HSI
LSI
12.5
12.0
36.0
11.5
34.0
IIP3 (dBm)
11.0
Gain (dB)
Dash = LPM
HSI
LSI
38.0
10.5
10.0
9.5
9.0
32.0
30.0
28.0
26.0
8.5
24.0
8.0
22.0
7.5
20.0
7.0
1600
18.0
1600
2000
2400
2800
3200
RF Frequency (MHz)
3600
3600
D001
Figure 50. IIP3 vs Frequency over H/LSI, LPM
Dash = LPM
HSI
LSI
13.0
12.0
11.0
10.0
9.0
Dash = LPM
HSI
LSI
8.0
2000
2400
2800
3200
RF Frequency (MHz)
7.0
1600
3600
2000
2400
2800
3200
RF Frequency (MHz)
D001
Figure 51. NF vs Frequency over H/LSI, LPM
3600
D001
Figure 52. Input P1dB vs Frequency over H/LSI, LPM
100.0
1.4
Dash = LPM
HSI
LSI
95.0
90.0
1.3
Power Dissipation (W)
85.0
80.0
OIP2 (dBm)
2400
2800
3200
RF Frequency (MHz)
14.0
P1dB (dBm)
NF (dB)
Figure 49. Gain vs Frequency over H/LSI, LPM
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
1600
2000
D001
75.0
70.0
65.0
60.0
55.0
1.2
Dash = LPM
-40 degC
25 degC
85 degC
1.1
1.0
0.9
0.8
0.7
50.0
0.6
45.0
40.0
1600
2000
2400
2800
3200
RF Frequency (MHz)
3600
Figure 53. OIP2 vs Frequency over H/LSI, LPM
18
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0.5
1400
D001
1800
2200
2600
3000
LO Frequency (MHz)
3400
D001
Figure 54. Power Dissipation vs Temperature, LPM
Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: TRF37A32 TRF37B32 TRF37C32
TRF37A32, TRF37B32, TRF37C32
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SLASE37A – MAY 2014 – REVISED DECEMBER 2014
Typical Characteristics (TRF37C32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 2500 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
12.0
38.0
HSI
LSI
11.5
34.0
10.5
32.0
10.0
30.0
IIP3 (dBm)
Gain (dB)
11.0
9.5
9.0
8.5
28.0
26.0
24.0
8.0
22.0
7.5
20.0
7.0
18.0
6.5
16.0
6.0
14.0
0
HSI
LSI
36.0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
0
Figure 56. IIP3 vs IF Frequency over H/LSI
90.0
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
HSI
LSI
HSI
LSI
85.0
80.0
75.0
OIP2 (dBm)
NF (dB)
Figure 55. Gain vs IF Frequency over H/LSI
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
70.0
65.0
60.0
55.0
50.0
45.0
40.0
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
0
Figure 57. NF vs IF Frequency over H/LSI
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
Figure 58. OIP2 vs IF Frequency over H/LSI
-20.0
60.0
-25.0
55.0
-30.0
RF-IF Iso
A-B Iso
50.0
RF Isolation (dB)
LO Leakage (dBm)
-35.0
-40.0
-45.0
-50.0
-55.0
-60.0
45.0
40.0
35.0
30.0
25.0
-65.0
20.0
-70.0
LO-IF Leakage
LO-RF Leakage
-75.0
-80.0
1600
2000
2400
2800
3200
LO Frequency (MHz)
15.0
10.0
1600
3600
Figure 59. LO-IF/RF Leakage vs Frequency
D001
2000
2400
2800
3200
RF Frequency (MHz)
3600
D001
Figure 60. A-B Channel and RF-IF Isolation
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Product Folder Links: TRF37A32 TRF37B32 TRF37C32
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Typical Characteristics (TRF37C32) (continued)
13.0
13.0
12.5 Solid/Dash = LSI/HSI
-40 degC
12.0
25 degC
85 degC
11.5
12.5 Solid/Dash = LSI/HSI
-3 dBm
12.0
0 dBm
6 dBm
11.5
11.0
11.0
Gain (dB)
Gain (dB)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 2500 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
10.5
10.0
9.5
9.0
8.5
8.0
8.0
7.5
7.5
2000
2400
2800
3200
RF Frequency (MHz)
7.0
1600
3600
40.0
38.0
38.0
36.0
36.0
34.0
34.0
32.0
32.0
30.0
28.0
26.0
26.0
24.0
22.0
Solid/Dash = LSI/HSI
-3 dBm
0 dBm
20.0
6 dBm
18.0
1600
2000
2400
2800
3200
RF Frequency (MHz)
3600
Figure 65. NF vs Frequency over Temperature (HSI/LSI)
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Figure 64. IIP3 vs Frequency over LO Drive (H/LSI)
NF (dB)
Figure 63. IIP3 vs Frequency over Temperature (HSI/LSI)
3600
3600
28.0
22.0
14.0
13.5 Solid/Dash = LSI/HSI
-40 degC
13.0
25 degC
12.5
85 degC
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
1600
2000
2400
2800
3200
RF Frequency (MHz)
2400
2800
3200
RF Frequency (MHz)
30.0
24.0
Solid/Dash = LSI/HSI
-40 degC
25 degC
20.0
85 degC
18.0
1600
2000
2400
2800
3200
RF Frequency (MHz)
2000
Figure 62. Gain vs Frequency over LO Drive (H/LSI)
40.0
IIP3 (dBm)
IIP3 (dBm)
9.5
8.5
Figure 61. Gain vs Frequency over Temperature (HSI/LSI)
NF (dB)
10.0
9.0
7.0
1600
20
10.5
14.0
13.5 Solid/Dash = LSI/HSI
-3 dBm
13.0
0 dBm
12.5
6 dBm
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
1600
2000
2400
2800
3200
RF Frequency (MHz)
3600
Figure 66. NF vs Frequency over LO Drive (H/LSI)
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SLASE37A – MAY 2014 – REVISED DECEMBER 2014
Typical Characteristics (TRF37C32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 2500 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
0.0
14.0
13.0
-5.0
Return Loss (dB)
P1dB (dBm)
12.0
11.0
10.0
9.0
Solid/Dash = LSI/HSI
-40 degC
25 degC
85 degC
8.0
7.0
1600
LO
RF
2000
2400
2800
3200
RF Frequency (MHz)
-10.0
-15.0
-20.0
-25.0
-30.0
1600
3600
100.0
100.0
95.0
95.0
90.0
90.0
85.0
85.0
80.0
80.0
75.0
70.0
65.0
65.0
60.0
55.0 Solid/Dash = LSI/HSI
-3 dBm
50.0
0 dBm
45.0
6 dBm
40.0
1600
2000
2400
2800
3200
RF Frequency (MHz)
3600
95.0
95.0
90.0
90.0
3x3 Spurious (dBc)
100.0
75.0
70.0
65.0
60.0
50.0
1600
2000
85.0
80.0
75.0
70.0
65.0
60.0
-40 degC
25 degC
85 degC
55.0
-40 degC
25 degC
85 degC
55.0
2400
2800
3200
RF Frequency (MHz)
50.0
1600
3600
2000
D001
Figure 71. 2 x 2 Spurious over Temperature (H/LSI)
3600
Figure 70. OIP2 vs Frequency over LO Drive (H/LSI)
100.0
80.0
D001
70.0
55.0 Solid/Dash = LSI/HSI
-40 degC
50.0
25 degC
45.0
85 degC
40.0
1600
2000
2400
2800
3200
RF Frequency (MHz)
85.0
3600
75.0
60.0
Figure 69. OIP2 vs Frequency over Temperature (HSI/LSI)
2x2 Spurious (dBc)
2400
2800
3200
RF Frequency (MHz)
Figure 68. RF/LO Input Return Loss
OIP2 (dBm)
OIP2 (dBm)
Figure 67. Input P1dB vs Frequency over Temperature
(HSI/LSI)
2000
2400
2800
3200
RF Frequency (MHz)
3600
D001
Figure 72. 3 x 3 Spurious over Temperature (H/LSI)
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TRF37A32, TRF37B32, TRF37C32
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8 Detailed Description
8.1 Overview
The TRF37x32 family is a dual-channel, down convert receive mixer. It provides high-linearity over wide RF and
IF bandwidths while also consuming low power. The device comes in three varieties, A, B, and C, to cover an
extremely wide frequency band and can operate with either low side injection (LSI) or high side injection (HSI).
The IF output is optimized for 200 MHz but operates from 30 MHz to 600 MHz with appropriate external
components.
The device consists of a passive mixer core buffered by an LO amplifier and a high-linearity IF amplifier. There is
an on-chip LDO to regulate VCC to the voltages needed for the small-geometry SiGe BiCMOS components. The
single-ended RF and LO inputs each have a wideband internal balun. The balun's center tap is internally
grounded.
Each channel offers an external power down terminal control which disables the IF circuitry. The device has a
low power mode controlled through an external terminal control. Low power mode reduces bias current in the LO
circuitry. Both power down and low power mode controls are internally biased to a normal operating state. The
IFA/B_BT terminals are self-biased and require no external components.
The TRF37x32 uses a single 3.3 V power supply and draws exceptionally low current for its performance node.
VCC_LO
VCCA
VCCB
REXT
8.2 Functional Block Diagram
IFOUTAP
RFINA
IFOUTAN
IFA_BT
LO
IFOUTBP
RFINB
IFOUTBN
IFB_BT
Power
Control
GND
PDA
PDB
LPM
Figure 73. Block Diagram
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8.3 Feature Description
8.3.1 Low Power Mode
Low power mode is enabled by setting the active-high LPM terminal to a logic high. The device contains an
internal pull-down to engage normal operation when the terminal is left unconnected or floating.
Low power mode reduces the bias current in the LO amplifier portion of the device and affects both channels.
Total current consumption is reduced 30% while lowering analog performance metrics.
8.3.2 Power Down
Each channel is powered down individually through the active-high PDA and PDB terminals. A logic high sets the
respective channel in power down. The device contains an internal pull-down to engage normal operation when
the terminal is left unconnected or floating.
Power down is implemented by removing bias in the IF amplifier. Operation of the opposite channel is not
affected when either channel is turned off. Turn-on and turn-off time is fast enough to serve in most TDD
applications.
Normalized IFOUT Power (mW/mW)
1.2
1
0.8
Turn-Off
Turn-On
0.6
0.4
0.2
0
0
50
100
150
Time (nsec)
200
250
D001
Figure 74. Device power down turn-on and turn-off time
8.3.3 Single Ended RF Input
Each RF input is single-ended with a wideband internal balun to convert the input to a differential signal, as
shown in Figure 73. The center tap of the balun is internally grounded and is not available external to the device.
The RF input should be ac coupled to driving circuitry according to the chart in Table 1.
Table 1. RF Input AC coupling capacitor
Device
Blocking Cap Value
TRF37A32
20 pF
TRF37B32
10 pF
TRF37C32
10 pF
8.3.4 Single Ended LO Input
The LO input is single ended with an internal balun to convert the input to a differential signal. The LO drive path
includes a high frequency dual-mode oscillation inhibitor circuitry to ensure stable operation. For best operation it
is recommended to keep the LO drive level at 0 dBm or higher to ensure inhibitor circuit does not falsely engage.
At lower LO drive level, keep the LO power engaged to the device at power-up. At lower drive level the inhibitor
may engage within certain frequency bands when the LO power transitions.
At the extreme RF frequencies the LO input bandwidth will force operation to either high side injection (HSI) or
low side injection (LSI). Table 2 provides the operating range of the LO for each device.
Table 2. LO Input Frequency Operating Range
Device
Operating Range
TRF37A32
600 - 1400 MHz
TRF37B32
500 - 2900 MHz
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Table 2. LO Input Frequency Operating
Range (continued)
TRF37C32
Device
Operating Range
Low Power mode (LPM)
disabled
1500 - 3600 MHz
Low Power mode (LPM)
enabled
1500 - 3500 MHz
8.3.5 IF Amplifier
The output of the device is driven by a high-linearity IF amplifier. The output nodes must be pulled up to VCC
with high-Q inductors. It is designed to provide 200 Ω differential / 100 Ω single-ended output impedance. Layout
should include symmetry for the differential output signal paths.
The IF output circuitry is optimized for performance at 200 MHz but operates over 30 MHz – 600 MHz.
8.4 Device Functional Modes
8.4.1 Low Power Mode
Low power mode is activated through the low power terminal, as described in the features description. It is
designed for extremely low power consumption.
8.4.2 Single Channel and Shutdown Modes
The device may be operated as a single channel device by disabling one channel or in complete shutdown by
disabling both channels.
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SLASE37A – MAY 2014 – REVISED DECEMBER 2014
9 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The devices are high-linearity, wideband receive mixers. They are typically implemented to convert frequencies
from the range 400 MHz to 3800 MHz into the range 30 MHz to 600 MHz.
9.2 Typical Application
The TRF37x32 device is typically placed in a system as illustrated in Figure 75.
TRF37x32
LNA
BPF
DRIVER
BPF
ADC
BPF
FPGA /
ASIC
SDR RECEIVER
SYSTEM
CLOCK
GENERATOR
RF PLL
SYNTH
Figure 75. Typical System Implementation of TRF37x32
A typical schematic for the TRF37x32 is shown in Figure 76.
270nH
0.01uF
270nH
+3.3V
0.01uF
+3.3V
0.01uF
0.047uF
10pF
PDA
RFINA
25
NC
IFOUTAN
GND
26
27
28
GND
GND
IFOUTAP
29
30
31
IFA_BT
32
100pF
VCCA
0.047uF
1
24
2
23
3
22
NC
NC
10pF
10pF
2.6k:
REXT
NC
10pF
RFINB
PDB
4
21
TRF37x32
(Top View)
5
20
6
19
7
18
8
17
100pF
GND
LO
10pF
NC
GND
NC
LPM
+3.3V
16
+3.3V
NC
15
GND
13
14
IFOUTBN
GND
12
IFOUTBP
10
11
GND
VCCB
IFB_BT
9
100pF
0.01uF
270nH
VCC_LO
270nH
NC
+3.3V
0.01uF
10pF
0.047uF
0.01uF
0.047uF
Power
Controller
Figure 76. Typical Application Schematic for TRF37x32
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Typical Application (continued)
9.2.1 Design Requirements
For this design example, use the parameters shown in Table 3.
Table 3. Design Parameters
EXAMPLE APPLICATION
REQUIREMENTS (1)
TRF37B32 PERFORMANCE (TYPICAL)
RF Frequency Range
2300 - 2400 MHz
700 - 2700 MHz
IF Frequency Range
318.64 - 418.64 MHz
30 - 600 MHz
Gain
9 - 10 dB
9.7 dB at FRF = 2300 MHz
NF
< 12 dB
10 dB at FRF = 2300 MHz
IIP3
> 28 dBm
30 dBm at FRF = 2300 MHz
IP1dB
> 8 dBm
11 dBm at FRF = 2300 MHz
MIXER PARAMETER
(1)
The example application requirements are derived from a hypothetical application and do not reflect the performance of the TRF37x32.
9.2.2 Detailed Design Procedure
9.2.2.1 Power Level
Input power should back off from the TRF37x32 compression point for linear operation, ideally by 10dB or more.
Choose LNA gain and gain scheduling in order to set the appropriate power level at the RF input to the
TRF37x32.
Given the expected input power level, use the expected gain through the mixer and other elements, such as
SAW filter and matching networks, to calculate the voltage expected at the ADC. Adjust gain and loss elements
to maximize the utilization of ADC dynamic range.
9.2.2.2 Matching
Although the TRF37x32 was designed to interface with 50 Ω RF and LO and 200 Ω differential signal lines, some
elements in the signal chain may not present a wideband real impedance. Matching components are optional but
may be used at these ports to improve impedance alignment, thereby increasing power delivered to the RF node
and decreasing reflected and radiated power. Good matching maximizes isolation and linearity performance.
9.2.2.3 RF Input Component Selection
The blocking capacitor value on the RF input should be selected according to Table 1.
9.2.2.4 IF Output Component Selection
Use high Q inductors for pull-up biasing on the IF output. 270 nH 0805-size wirewound indictors provides
excellent linearity and gain. Larger inductor values may compress the IF bandwidth, while smaller package sizes
tend to introduce lower inductor Q ratings.
Connect the supply nodes of both inductors for a given channel symmetrically to the VCC net with close
proximity to ensure balanced connection to the supply.
9.2.2.5 Frequency Planning
The LO and RF inputs are both designed for wideband behavior, and either high-side or low-side injection may
be used interchangeably across most of the RF band. At the extreme RF frequencies the LO input bandwidth will
force operation to either high side injection (HSI) or low side injection (LSI). Table 2 provides the operating range
of the LO for each device. Where possible it is recommended to utilize low side injection to keep the power
dissipation to a minimum.
9.2.2.6 Control Terminal Transients
Decoupling capacitors reduce terminal noise but also slow transient response. Adjust external capacitors in order
to meet specified power-on and power-off response times. Apply transmission line matching techniques to
achieve the fastest response times.
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9.2.3 Application Curves
0
Magnitude (dBFS)
±20
±40
±60
±80
±100
±120
0
25
50
75
100
125
150
175
200
225
Frequency (MHz)
250
C016
Figure 77. 4-Carrier Receiver Application
10 Power Supply Recommendations
The nominal voltage supply is 3.3 V; however, the TRF37x32 offers very consistent performance across the
entire recommended voltage range. Signal isolation depends partly on power supply isolation. All supplies may
be generated from a common source but should be isolated through decoupling capacitors placed close to the
device. The typical application schematic in Figure 76 is an excellent example. Select capacitors with selfresonant frequency near the application frequency or noise frequency. When multiple capacitors are used in
parallel to create a broadband decoupling network, place the capacitor with the higher self-resonant frequency
closer to the device.
10.1 Power Up Sequence
No power up sequence is required.
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SLASE37A – MAY 2014 – REVISED DECEMBER 2014
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11 Layout
11.1 Layout Guidelines
Good layout practice helps to enable excellent linearity and isolation performance. An example of good layout is
shown in Figure 78. In the example, only the top signal layer and its adjacent ground reference plane are shown.
Some recommended layout principles include the following:
• Excellent electrical connection from the PowerPAD™ to the board ground is essential. Use the recommended
footprint, solder the pad to the board, and do not include solder mask under the pad
• Connect pad ground to device terminal ground on the top board layer.
• Verify that the return current path follows the primary current path by including topside terminal to pour
ground connection and vias close to any reference layer transition.
• Do not route signal lines over breaks in the reference plane.
• Maintain symmetry as much as possible between lines in a differential pair. Match electrical lengths.
• Avoid routing clocks and digital control lines near signal lines.
• Do not route signal lines over noisy power planes. Ground is the best reference, although clean power planes
can serve where necessary.
• Place supply decoupling close to the device.
• Keep channels physically separated to improve isolation.
11.2 Layout Example
Figure 78.
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SLASE37A – MAY 2014 – REVISED DECEMBER 2014
12 Device and Documentation Support
12.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 4. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TRF37A32
Click here
Click here
Click here
Click here
Click here
TRF37B32
Click here
Click here
Click here
Click here
Click here
TRF37C32
Click here
Click here
Click here
Click here
Click here
12.2 Trademarks
PowerPAD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TRF37A32IRTVR
ACTIVE
WQFN
RTV
32
3000
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
TR37A32
IRTV
TRF37A32IRTVT
ACTIVE
WQFN
RTV
32
250
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
TR37A32
IRTV
TRF37B32IRTVR
ACTIVE
WQFN
RTV
32
3000
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
TR37B32
IRTV
TRF37B32IRTVT
ACTIVE
WQFN
RTV
32
250
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
TR37B32
IRTV
TRF37C32IRTVR
ACTIVE
WQFN
RTV
32
3000
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
TR37C32
IRTV
TRF37C32IRTVT
ACTIVE
WQFN
RTV
32
250
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
TR37C32
IRTV
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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