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TRS3232EIDW

TRS3232EIDW

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC16

  • 描述:

    IC TRANSCEIVER FULL 2/2 16SOIC

  • 数据手册
  • 价格&库存
TRS3232EIDW 数据手册
TRS3232E SLLS790D – JUNE 2007 – REVISED JUNE 2021 TRS3232E 3-V to 5.5-V Multichannel RS-232 Line Driver and Receiver With ±15-kV IEC ESD Protection In Small Package 1 Features 3 Description • The TRS3232E device consists of two line drivers, two-line receivers, and a dual charge-pump circuit with ±15-kV IEC ESD protection pin to pin (serial-port connection pins, including GND). • • • • • • • • • ESD protection for RS-232 bus pins – ±15 kV (HBM) – ±8 kV (IEC61000-4-2, Contact discharge) – ±15 kV (IEC61000-4-2, Air-gap discharge) Meets or exceeds the requirements of TIA/ EIA-232-F and ITU V.28 standards Operates with 3-V to 5.5-V VCC supply – Interoperable with RS-232 down to 2.7-V VCC Operates up to 250 kbps Two drivers and two receivers Low supply current: 300 μA (typical) External capacitors: 4 × 0.1 μF Accepts 5-V logic input with 3.3-V supply Available in near chip-scale package (QFN-16, 3 mm x 3 mm), 85% smaller than SOIC-16 Pin compatible to alternative high-speed devices (1 Mbps) – SN65C3232E (–40°C to +85°C) – SN75C3232E (0°C to 70°C) The device meets the requirements of TIA/EIA-232F and provides the electrical interface between an asynchronous communication controller and the serial-port connector. The charge pump and four small external capacitors allow operation from a single 3-V to 5.5-V supply. The devices operate at data signaling rates up to 250 kbps and a maximum of 30-V/μs driver output slew rate. Device Information(1) PART NUMBER TRS3232E 2 Applications • • • • • • • Industrial PCs Wired networking Data center and enterprise computing Battery-powered systems Notebooks Palmtop PCs Hand-held equipment (1) 5V BODY SIZE (NOM) SOIC (D) 16 9.90 mm × 3.91 mm SSOP (DB) 16 6.20 mm × 5.30 mm SOIC (DW) 16 10.30 mm × 7.50 mm TSSOP (PW) 16 5.00 mm × 4.40 mm VQFN (RGT) 16 3.00 mm x 3.00 mm For all available packages, see the orderable addendum at the end of the data sheet. POWER 2 2 TOUT RS232 2 RIN RS232 TX TIN 2 ROUT PACKAGE RX Simplified Diagram An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Functions...................................3 6 Specifications.................................................................. 4 6.1 Absolute Maximum Ratings........................................ 4 6.2 ESD Ratings............................................................... 4 6.3 ESD Ratings - IEC Specifications............................... 4 6.4 Recommended Operating Conditions.........................5 6.5 Thermal Information....................................................5 6.6 Electrical Characteristics — Device............................ 6 6.7 Electrical Characteristics — Driver............................. 6 6.8 Electrical Characteristics — Receiver.........................7 6.9 Switching Characteristics............................................7 7 Parameter Measurement Information.......................... 10 8 Detailed Description...................................................... 11 8.1 Overview................................................................... 11 8.2 Functional Block Diagram......................................... 11 8.3 Feature Description...................................................11 8.4 Device Functional Modes..........................................12 9 Application and Implementation.................................. 13 9.1 Application Information............................................. 13 9.2 Typical Application.................................................... 13 10 Power Supply Recommendations..............................14 11 Layout........................................................................... 15 11.1 Layout Guidelines................................................... 15 11.2 Layout Example...................................................... 15 12 Device and Documentation Support..........................16 12.1 Receiving Notification of Documentation Updates..16 12.2 Support Resources................................................. 16 12.3 Trademarks............................................................. 16 12.4 Electrostatic Discharge Caution..............................16 12.5 Glossary..................................................................16 13 Mechanical, Packaging, and Orderable Information.................................................................... 16 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (June 2021) to Revision D (June 2021) Page • Added Applications: Industrial PCs, Wired networking, and Data center and enterprise computing..................1 • Changed the table note in the ESD Ratings - IEC Specifications to make it applicable to D, DB and PW packages. .......................................................................................................................................................... 4 • Changed the thermal paramater values for D, DB and PW packages in the Thermal Information table............5 Changes from Revision B (October 2017) to Revision C (June 2021) Page • Added RGT package to the Device Information ................................................................................................ 1 • Added the RGT Pin Configuration ..................................................................................................................... 3 • Added the ESD Ratings - IEC Specifications .................................................................................................... 4 • Added RGT to the Thermal Information .............................................................................................................5 • Added RGT package to the Switching Characteristics ...................................................................................... 7 • Changed the capacitor value From: 1 µf To: 0.1 µf in the Layout Diagram ..................................................... 15 Changes from Revision A (July 2015) to Revision B (October 2017) Page • Added Feature: Interoperable with RS-232 down to 2.7-V VCC .........................................................................1 • Added Driver Output Voltage vs. Supply Voltage, Both Drivers Loaded ........................................................0 Changes from Revision * (April 2007) to Revision A (July 2015) Page • Deleted Ordering Information table.....................................................................................................................1 • Added Device Information table, Pin Configuration and Functions section, ESD Ratings table, Thermal Information table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ......................................................... 1 2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 5 Pin Configuration and Functions C1+ V+ C1− C2+ C2− V− DOUT2 RIN2 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC GND DOUT1 RIN1 ROUT1 DIN1 DIN2 ROUT2 C1- 1 C2+ 2 C1+ V+ VCC GND 16 15 14 13 12 DOUT1 11 RIN1 Thermal Pad C2- 3 10 ROUT1 V- 4 9 DIN1 Figure 5-1. D, DW, DB or PW Package, 16-Pin SOIC, SSOP or TSSOP, Top View 5 6 7 8 DOUT2 RIN2 ROUT2 DIN2 Figure 5-2. RGT package, 16 Pin VQFN, Top View Table 5-1. Pin Functions PIN NAME I/O DESCRIPTION NO. RGT C1+ 1 16 — Positive lead of C1 capacitor C1– 3 1 — Negative lead of C1 capacitor C2+ 4 2 — Positive lead of C2 capacitor C2– 5 3 — Negative lead of C2 capacitor DIN1 11 9 I Logic data input (from UART) DIN2 10 8 I Logic data input (from UART) DOUT2 7 5 O RS232 line data output (to remote RS232 system) DOUT1 14 12 O RS232 line data output (to remote RS232 system) GND 15 13 — Ground RIN1 13 11 I RS232 line data input (from remote RS232 system) RIN2 8 6 I RS232 line data input (from remote RS232 system) ROUT2 9 7 O Logic data output (to UART) ROUT1 12 10 O Logic data output (to UART) V+ 2 15 O Positive charge pump output for storage capacitor only V– 6 4 O Negative charge pump output for storage capacitor only VCC 16 14 — Supply voltage, connect to external 3-V to 5.5-V power supply Yes — Thermal pad for improving heat dissipation. Can be connected to GND or left floating. Thermal Pad Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E 3 TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) Supply voltage(2) VCC voltage(2) V+ Positive output supply V– Negative output supply voltage(2) V+ – V– VI Supply voltage Drivers Input voltage UNIT 6 V –0.3 7 V 0.3 –7 V 13 V 6 V –0.3 Receivers Output voltage TJ Operating virtual junction temperature Tstg Storage temperature (2) MAX difference(2) VO (1) MIN –0.3 –25 25 V Drivers –13.2 13.2 V Receivers –0.3 VCC + 0.3 V 150 °C 150 °C –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to network GND. 6.2 ESD Ratings VALUE V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/ JEDEC JS-001(1) Charged-device model (CDM), per JEDEC specification JESD22-C101(2) (1) (2) All pins except RIN1, RIN2, DOUT1 and DOUT2 ±2000 Pins RIN1, RIN2, DOUT1 and DOUT2 ±15000 All pins ±1500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 ESD Ratings - IEC Specifications VALUE IEC 61000-4-2, Contact Discharge(1) V (ESD) Electrostatic discharge IEC 61000-4-2, Air-Gap Discharge(1) (1) 4 Pins RIN1, RIN2, DOUT1, DOUT2 UNIT ±8000 V Pins RIN1, RIN2, DOUT1, DOUT2 ±15000 For RGT, D, DB and PW packages only: Minimum of 1-µF capacitor between VCC and GND is required to meet the specified IEC 61000-4-2 rating. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 6.4 Recommended Operating Conditions See Typical Operating Circuit and Capacitor Values.(1) NOM MAX 3 3.3 3.6 4.5 5 5.5 VCC = 3.3 V Supply voltage VCC = 5 V V 2 5.5 5.5 DIN 0 0.8 V RIN –25 25 V 0 70 –40 85 Driver high-level input voltage DIN VIL Driver low-level input voltage VI Receiver input voltage TA Operating free-air temperature VCC = 3.3 V UNIT 2.4 VIH (1) MIN VCC = 5 V TRS3232EC TRS3232EI V °C C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V. 6.5 Thermal Information TRS3232E THERMAL METRIC(1) PW (TSSOP) D (SOIC) DW (SOIC) DB (SSOP) RGT (VQFN) UNIT 16 PINS 16 PINS 16 PINS 16 PINS 16 PINS RθJA Junction-to-ambient thermal resistance 108.2 85.9 72.3 103.1 48.8 °C/W RθJCtop Junction-to-case (top) thermal resistance 39.0 43.1 33.5 49.2 55.8 °C/W RθJB Junction-to-board thermal resistance 54.4 44.5 37.1 54.8 23.2 °C/W ψJT Junction-to-top characterization parameter 3.3 10.1 7.5 12.0 1.7 °C/W ψJB Junction-to-board characterization parameter 53.8 44.1 37.1 54.1 23.2 °C/W RθJCbot Junction-to-case (bottom) thermal resistance N/A N/A N/A N/A 9.0 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E 5 TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 6.6 Electrical Characteristics — Device over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Typical Operating Circuit and Capacitor Values).(1) PARAMETER ICC (1) (2) Supply current TEST CONDITIONS MIN No load, VCC = 3.3 V or 5 V TYP(2) MAX 0.3 1 UNIT mA Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V. All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. 6.7 Electrical Characteristics — Driver over operating free-air temperature range (unless otherwise noted) (see Typical Operating Circuit and Capacitor Values).(1) PARAMETER MIN TYP(2) 5.4 VOH High-level output voltage DOUT at RL = 3 kΩ to GND, DIN = GND 5 VOL Low-level output voltage DOUT at RL = 3 kΩ to GND, DIN = VCC –5 IIH High-level input current VI = VCC IIL Low-level input current VI at GND IOS (3) Short-circuit output current rO Output resistance (1) (2) (3) 6 TEST CONDITIONS VCC = 3.6 V, VO = 0 V VCC = 5.5 V, VO = 0 V VCC, V+, and V– = 0 V, VO = ±2 V 300 MAX UNIT V –5.4 V ±0.01 ±1 μA ±0.01 ±1 μA ±35 ±60 mA 10M Ω Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V. Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one output should be shorted at a time. All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 6.8 Electrical Characteristics — Receiver over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Typical Operating Circuit and Capacitor Values).(2) PARAMETER VOH High-level output voltage IOH = –1 mA VOL Low-level output voltage IOL = 1.6 mA VIT+ Positive-going input threshold voltage VIT– Negative-going input threshold voltage Vhys Input hysteresis (VIT+ – VIT–) ri Input resistance (1) (2) MIN TYP(1) VCC – 0.6 VCC – 0.1 TEST CONDITIONS MAX UNIT V 0.4 VCC = 3.3 V 1.5 2.4 VCC = 5 V 1.8 2.4 VCC = 3.3 V 0.6 1.2 VCC = 5 V 0.8 1.5 V V V 0.3 VI = ±3 V to ±25 V 3 5 V 7 kΩ All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V. 6.9 Switching Characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Typical Operating Circuit and Capacitor Values)(1) PARAMETER Maximum data rate Driver pulse skew(3) tsk(p) SR(tr) TEST CONDITIONS RL = 3 kΩ, CL = 1000 pF, see Driver Slew Rate One DOUT switching, MIN TYP(2) RGT package 250 500 D, DB, DW and PW packages 150 250 RL = 3 kΩ, CL = 1000 pF, VCC = 5 V Driver Pulse Skew RGT package 50 RL = 3 kΩ to 7 kΩ, CL = 150 pF to 2500 pF see Driver Pulse Skew D, DB, DW and PW packages 300 Driver slew rate, transition region RL = 3 kΩ to 7 kΩ, (see Driver Slew Rate) VCC = 3.3 V UNIT kbps ns CL = 150 pF to 1000 pF 6 30 CL = 150 pF to 2500 pF 4 30 V/μs tPLH RGT package CL = 150 pF, Receiver propagation delay time, see Receiver Propagation Delay D, DB, DW and low- to high-level output Times PW packages RGT package CL = 150 pF, Receiver propagation delay time, see Receiver Propagation Delay D, DB, DW and high- to low-level output Times PW packages 100 tPHL tsk(p) Receiver pulse skew(3) RGT package 20 D, DB, DW and PW packages 300 (1) (2) (3) MAX 90 300 300 ns ns ns Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V. All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. Pulse skew is defined as |tPLH – tPHL| of each channel of the same device. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E 7 TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 6 0 5 ±1 DOUT Voltage (V) DOUT Voltage (V) Typical Characteristics 4 3 2 ±2 ±3 ±4 1 ±5 VOH VOL 0 ±6 0 5 10 15 20 25 DOUT Current (mA) 0 10 15 20 25 DOUT Current (mA) VCC = 3.3 V C001 VCC = 3.3 V Figure 6-1. DOUT VOH vs Load Current, Both Drivers Loaded Figure 6-2. DOUT VOL vs Load Current, Both Drivers Loaded 6 200 CL=150 pF CL=250 pF CL=1000 pF CL=2500 pF 180 Driver Pulse Skew (ns) 4 Transmitter Output (V) 5 C001 2 TxOUT+ TxOUT- 0 -2 -4 160 140 120 100 80 60 40 -6 2.7 3 3.3 3.6 3.9 4.2 Supply Voltage (V) 4.5 4.8 5 20 3 3.25 3.5 3.75 4 D001 TX1 at 250 TX2 at 15.6 kbps kbps Both TX loaded 3 kΩ and 1000 pF 4.25 4.5 VCC (V) 4.75 5 5.25 5.5 D001 D001_tx_skew.grf Figure 6-4. Driver Pulse Skew (RGT Package) Figure 6-3. Driver Output Voltage vs. Supply Voltage, Both Drivers Loaded 130 120 -45 qC 25 qC 85 qC 110 -45 qC 25 qC 85 qC 126 122 Receiver Path tPHL (ns) Receiver Path tpLH (ns) 115 105 100 95 90 85 118 114 110 106 102 98 80 94 75 90 3 3.25 3.5 3.75 4 4.25 4.5 VCC (V) 4.75 5 5.25 5.5 3 D002 D002_rx_tpLH.grf Figure 6-5. Receiver Path Low-to-High Propagation Delay (RGT Package) 8 3.25 3.5 3.75 4 4.25 4.5 VCC (V) 4.75 5 5.25 5.5 D003 D003_rx_tpHL.grf Figure 6-6. Receiver Path High-to-Low Propagation Delay (RGT Package) Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 Typical Characteristics 50 -45 qC 25 qC 85 qC Receiver Path Skew (ns) 45 40 35 30 25 20 15 10 5 0 3 3.25 3.5 3.75 4 4.25 4.5 VCC (V) 4.75 5 5.25 5.5 D004 D004_rx_skew.grf Figure 6-7. Receiver Path Skew (|tpHL-tpLH|) (RGT Package) Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E 9 TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 7 Parameter Measurement Information 3V Input Generator (see Note B) 1.5 V RS-232 Output 50 Ω RL 1.5 V 0V tPTHL CL (see Note A) tPTLH −3 V TEST CIRCUIT SR(tr) = t PTHL 6V or t VOH 3V −3 V 3V Output VOL VOLTAGE WAVEFORMS PTLH A. CL includes probe and jig capacitance B. The pulse generator has the following characteristics: PRR = 250 kbps, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns Figure 7-1. Driver Slew Rate 3V Input Generator (see Note B) 1.5 V RS-232 Output 50 Ω RL 1.5 V 0V tPTHL CL (see Note A) tPTLH 3V Output 3V −3 V −3 V TEST CIRCUIT SR(tr) = t PTHL 6V or t VOH VOL VOLTAGE WAVEFORMS PTLH A. CL includes probe and jig capacitance B. The pulse generator has the following characteristics: PRR = 250 kbps, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns Figure 7-2. Driver Pulse Skew 3V Generator (see Note B) RS-232 Output 50 Ω RL 1.5 V Input 1.5 V 0V CL (see Note A) tPHL tPLH VOH 50% Output 50% VOL TEST CIRCUIT VOLTAGE WAVEFORMS A. CL includes probe and jig capacitance B. The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns Figure 7-3. Receiver Propagation Delay Times 10 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 8 Detailed Description 8.1 Overview The TRS3232E device consists of two line drivers, two-line receivers, and a dual charge-pump circuit with IEC61000-4-2 ESD protection terminal to terminal (serial-port connection terminals, including GND). The device meets the requirements of TIA/EIA-232-F and provides the electrical interface between an asynchronous communication controller and the serial-port connector. The charge pump and four small external capacitors allow operation from a single 3-V to 5.5-V supply. The device operates at data signaling rates up to 250 kbps and a maximum of 30-V/μs driver output slew rate. Outputs are protected against shorts to ground. 8.2 Functional Block Diagram 5V POWER 2 2 ROUT 2 TOUT RS232 2 RIN RS232 TX TIN RX 8.3 Feature Description 8.3.1 Power The power block increases, inverts, and regulates voltage at V+ and V– pins using a charge pump that requires four external capacitors. 8.3.2 RS232 Driver Two drivers interface standard logic level to RS232 levels. Both DIN inputs must be valid high or low. 8.3.3 RS232 Receiver Two receivers interface RS232 levels to standard logic levels. An open input will result in a high output on ROUT. Each RIN input includes an internal standard RS232 load. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E 11 TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 8.4 Device Functional Modes Table 8-1 and Table 8-2 list the functional modes of the drivers and receivers of TRS3232E. Table 8-1. Each Driver(1) INPUT DIN (1) OUTPUT DOUT L H H L H = high level, L = low level Table 8-2. Each Receiver(1) INPUT RIN (1) OUTPUT ROUT L H H L Open H H = high level, L = low level, Open = input disconnected or connected driver off 11 14 DIN1 DOUT1 10 7 DIN2 DOUT2 12 13 ROUT1 RIN1 9 8 ROUT2 RIN2 Figure 8-1. Logic Diagram 8.4.1 VCC Powered by 3 V to 5.5 V The device is in normal operation. 8.4.2 VCC Unpowered, VCC = 0 V When TRS3232E is unpowered, it can be safely connected to an active remote RS232 device. 12 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 9 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 9.1 Application Information The TRS3232E interfaces logic lines from a UART or microcontroller to the voltage and current levels needed for RS232 communication. The TIN inputs will accept 5-V logic with 3.3-V VCC supply. All baud rates up to 250-kbps are supported. It is important to use the correct capacitors for the VCC voltage. This will reduce ripple voltage on the TOUT outputs. If only one driver is needed, the unused driver input should be connected to VCC or ground. 9.2 Typical Application ROUT and DIN connect to UART or general-purpose logic lines. RIN and DOUT lines connect to a RS232 connector or cable. For proper operation, add capacitors as shown in Table 9-1. 1 − 16 + CBYPASS − = 0.1µF + C1 VCC C1+ 2 (1) + C3 V+ GND 15 − 3 4 14 DOUT1 C1− 13 C2+ + C2 RIN1 5 kΩ − 5 C2− 12 6 C4 − V− 11 ROUT1 DIN1 + DOUT2 RIN2 7 10 8 9 DIN2 ROUT2 5 kΩ A. C3 can be connected to VCC or GND Resistor values shown are nominal. Nonpolorized ceramic capacitors are acceptable. If polarized tantalum or electrolytic capacitors are used, they should be connected as shown. Figure 9-1. Typical Operating Circuit and Capacitor Values Table 9-1. VCC vs Capacitor Values VCC C1 C2, C3, C4 3.3 V ± 0.3 V 0.1 µF 0.1 µF 5 V ± 0.5 V 0.047 µF 0.33 µF 3 V ± 5.5 V 0.1 µF 0.47 µF Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E 13 TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 9.2.1 Design Requirements The recommended VCC is 3.3 V or 5 V. 3 V to 5.5 V is also possible. The maximum recommended bit rate is 250 kbps. 9.2.2 Detailed Design Procedure All DIN inputs must be connected to valid low or high logic levels. Select capacitor values based on VCC level for best performance. 9.2.3 Application Curve Voltage (V) Figure 9-2 curves are for 3.3-V VCC and 250-kbps alternative bit data stream. 6 5 4 3 2 1 0 ±1 ±2 ±3 ±4 ±5 ±6 ±7 ±8 ±9 DIN DOUT to RIN ROUT 0 1 2 3 4 5 6 7 Time ( s) 8 9 10 C001 Figure 9-2. 250 kbps Driver to Receiver Loopback Timing Waveform, VCC= 3.3 V 10 Power Supply Recommendations The supply voltage, VCC, should be between 3 V and 5.5 V. Select the values of the charge-pump capacitors using Table 9-1. 14 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 11 Layout 11.1 Layout Guidelines Keep the external capacitor traces short, specifically on the C1 and C2 nodes that have the fastest rise and fall times. 11.2 Layout Example Ground 1 C1+ 0.1 µF 0.1 µF 2 VS+ VCC 16 GND 15 3 C1- T1OUT 14 4 C2+ R1IN 13 5 C2- R1OUT 12 6 VS- T1IN 11 7 T2OUT T2IN 10 VCC 0.1 µF Ground 0.1 µF Ground 0.1 µF 8 R2IN R2OUT 9 Figure 11-1. Layout Diagram Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E 15 TRS3232E www.ti.com SLLS790D – JUNE 2007 – REVISED JUNE 2021 12 Device and Documentation Support 12.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 12.2 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 12.3 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.5 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser based versions of this data sheet, refer to the left hand navigation. 16 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: TRS3232E PACKAGE OPTION ADDENDUM www.ti.com 15-Jul-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TRS3232ECDR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 TRS3232EC Samples TRS3232ECDW ACTIVE SOIC DW 16 40 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 TRS3232EC Samples TRS3232ECDWR ACTIVE SOIC DW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 TRS3232EC Samples TRS3232ECPWR ACTIVE TSSOP PW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 RS32EC Samples TRS3232EIDBR ACTIVE SSOP DB 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 RS32EI Samples TRS3232EIDR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 TRS3232EI Samples TRS3232EIDW ACTIVE SOIC DW 16 40 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 TRS3232EI Samples TRS3232EIDWR ACTIVE SOIC DW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 TRS3232EI Samples TRS3232EIPWR ACTIVE TSSOP PW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 RS32EI Samples TRS3232EIPWRG4 ACTIVE TSSOP PW 16 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 RS32EI Samples TRS3232EIRGTR ACTIVE VQFN RGT 16 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 3232 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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