TS12A12511DCNR

TS12A12511 SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 TS12A12511 5-Ω Single-Channel SPDT Analog Switch With Negative Signaling Capability 1 Features 3 Description • • • • • • • • The TS12A12511 is a bidirectional, single-channel, single-pole double-throw (SPDT) analog switch that can pass signals with swings of 0 to 12 V or –6 V to 6 V. This switch conducts equally well in both directions when it is on. The device also offers a low ON-state resistance of 5 Ω (typical), which is matched to within 1 Ω between channels. The maximum current consumption is 93 MHz. The TS12A12511 exhibits break-before-make switching action, preventing momentary shorting when switching channels. This device is available packaged in an 8-lead VSSOP, 8-lead SOT-23, and a 8-pin WSON. • • • ±2.7-V to ±6-V dual supply 2.7-V to 12-V single supply 5-Ω (typical) ON-state resistance 1.6-Ω (typical) ON-state resistance flatness 3.3-V, 5-V compatible digital control inputs Rail-to-rail analog signal handling Fast tON, tOFF times Supports both digital and analog signal applications Tiny 8-lead SOT-23, 8-lead MSOP, and QFN-8 packages Latch-up performance exceeds 100 mA per JESD 78, Class II ESD performance tested per JESD 22 – ±2000-V Human Body Model (A114-B, Class II) – ±1000-V Charged-Device Model (C101) 2 Applications • • • • • • • Automatic test equipment Power routing Communication systems Data acquisition systems Sample-and-hold systems Relay replacement Grid Infrastructure Package Information(1) PART NUMBER TS12A12511 (1) PACKAGE BODY SIZE (NOM) DCN (SOT-23, 8) 2.90 mm × 1.63 mm DGK (VSSOP, 8) 3.00 mm × 3.00 mm DRJ (WSON, 8) 4.00 mm × 4.00 mm For all available packages, see the orderable addendum at the end of the data sheet. SPDT NC COM NO IN Simplified Schematic An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Pin Configuration and Functions...................................3 6 Specifications.................................................................. 4 6.1 Absolute Maximum Ratings........................................ 4 6.2 ESD Ratings............................................................... 4 6.3 Recommended Operating Conditions.........................4 6.4 Thermal Information....................................................4 6.5 Electrical Characteristics: ±5-V Dual Supply...............5 6.6 Electrical Characteristics: 12-V Single Supply............ 6 6.7 Electrical Characteristics: 5-V Single Supply.............. 7 6.8 Typical Characteristics................................................ 8 7 Parameter Measurement Information.......................... 10 7.1 Test Circuits.............................................................. 10 8 Detailed Description......................................................14 8.1 Overview................................................................... 14 8.2 Functional Block Diagram......................................... 14 8.3 Feature Description...................................................14 8.4 Device Functional Modes..........................................14 9 Application and Implementation.................................. 15 9.1 Application Information............................................. 15 9.2 Typical Application.................................................... 15 10 Power Supply Recommendations..............................17 11 Layout........................................................................... 17 11.1 Layout Guidelines................................................... 17 11.2 Layout Example...................................................... 17 12 Device and Documentation Support..........................18 12.1 Receiving Notification of Documentation Updates..18 12.2 Support Resources................................................. 18 12.3 Trademarks............................................................. 18 12.4 Electrostatic Discharge Caution..............................18 12.5 Glossary..................................................................18 13 Mechanical, Packaging, and Orderable Information.................................................................... 18 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (January 2019) to Revision E (September 2022) Page • Updated the numbering format for tables, figures, and cross-references throughout the document..................1 • Updated the Applications section....................................................................................................................... 1 • Updated the Leakage Current vs I/O Voltage (Switch ON) and Leakage Current vs I/O Voltage (Switch OFF) figures................................................................................................................................................................. 8 Changes from Revision C (January 2015) to Revision D (January 2019) Page • Added Junction temperature to the Absolute Maximum Ratings table............................................................... 4 Changes from Revision B (April 2011) to Revision C (January 2015) Page • Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ............................................................................................................................................................... 1 Changes from Revision A (May 2010) to Revision B (April 2011) Page • Deleted preview status from DGK and DCN packages...................................................................................... 3 2 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 5 Pin Configuration and Functions COM NC GND V+ 1 8 2 7 3 6 5 4 COM NC GND V+ NO V– IN N.C. Figure 5-1. DGK Package, 8-Pin VSSOP (Top View) 1 8 2 7 6 3 4 5 NO V– IN N.C. Figure 5-2. DCN Package, 8-Pin SOT-23 (Top View) COM 1 8 NO NC 2 7 V– GND 3 6 IN V+ 4 5 N.C. N.C. – Not internally connected NC – Normally closed NO – Normally open The Exposed Thermal Pad must be electrically connected to V– or left floating. Figure 5-3. DRJ Package, 8-Pin WSON (Top View) Table 5-1. Pin Functions PIN NAME NO. TYPE(1) DESCRIPTION COM 1 I/O Common. Can be an input or output. GND 3 — Ground (0 V) reference IN 6 I NC 2 I/O Normally closed. Can be an input or output. N.C. 5 — No connect. Not internally connected. NO 8 I/O Normally open. Can be an input or output. VCC 4 I Most positive power supply –VCC 7 I Most negative power supply. This pin is only used in dual-supply applications and should be tied to ground in single-supply applications. Thermal pad (1) — Logic control input The Exposed Thermal Pad must be electrically connected to V– or left floating. I = input, O = output Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 3 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 6 Specifications 6.1 Absolute Maximum Ratings TA = 25°C (unless otherwise noted).(1) MIN MAX UNIT VCC to -VCC 0 13 V VCC to GND –0.3 13 V -VCC to GND –6.5 0.3 V VI/O Analog inputs IIN Digital inputs II/O NC, NO, or COM V ±30 mA Peak current NC, NO, or COM ±100 mA Continuous current NC, NO, or COM ±50 mA TA Operating temperature TJ Junction temperature Tstg Storage temperature (1) –VCC – 0.5 V CC + 0.5 –40 –65 85 °C 150 °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Section 6.3 is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC 0 12 V –VCC –6 0 V VI/O –VCC VCC V VIN 0 VCC V 6.4 Thermal Information TS12A12511 THERMAL METRIC(1) DCN DGK DRJ UNIT 8 PINS RθJA Junction-to-ambient thermal resistance 218.4 184.5 47.8 RθJC(top) Junction-to-case (top) thermal resistance 89.9 71.0 48.6 RθJB Junction-to-board thermal resistance 144.4 104.5 24.2 ψJT Junction-to-top characterization parameter 7.8 11.3 1.2 ψJB Junction-to-board characterization parameter 141.7 103.3 24.4 RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A 9.0 (1) 4 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 6.5 Electrical Characteristics: ±5-V Dual Supply VCC = 5 V ± 10%, –VCC = –5 V ± 10%, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS TA= 25°C MIN TYP TA= –40°C to 85°C MAX MIN TYP MAX UNIT ANALOG SWITCH Analog signal range -VCC VCC V 8 Ω RON ON-state resistance VNC = -4.5 V to +4.5 V or VNO = –4.5 V to 4.5 V, ICOM = –10 mA; see Figure 7-1 5 ΔRON ON-state resistance match between channels VNC = -4.5 V to +4.5 V or VNO = -4.5 V to +4.5 V, ICOM = –10 mA 1 1.2 1.6 Ω RON(flat) ON-state resistance flatness VNC = -3.3 V to +3.3 V or VNO = -3.3 V to +3.3 V, ICOM = –10 mA 1.6 2.2 2.2 Ω 5 LEAKAGE CURRENTS INC(OFF), INO(OFF) OFF leakage current VNC = -4.5 V to +4.5 V or VNO = -4.5 V to +4.5 V VCOM = -4.5 V to +4.5 V; see Figure 7-2 –1 ±0.5 1 –50 50 nA INC(ON), INO(ON) ON leakage current VNC = -4.5 V to +4.5 V or VNO = -4.5 V to +4.5 V VCOM = open; see Figure 7-3 –1 ±0.5 1 –50 50 nA 2.4 VCC V 0 0.8 V –1 1 μA DIGITAL INPUTS VINH High-level input voltage VINL Low-level input voltage IINL, IINH Input current CIN Control input capacitance VIN = VINL or VINH 0.005 2.5 pF DYNAMIC(1) tON Turn-ON time RL = 300 Ω, CL = 35 pF, VCOM = 3.3 V; see Figure 7-5 80 95 115 ns tOFF Turn-OFF time RL = 300 Ω, CL = 35 pF, VCOM = 3.3 V 41 50 56 ns tBBM Break-before-make time delay RL = 300 Ω, CL = 35 pF, VNC = VNO = 3.3 V; see Figure 7-6 36 QC Charge injection VNC = VNO = 0 V, RGEN = 0 Ω, CL = 1 nF; see Figure 7-7 26 pC OISO OFF isolation RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 7-8 –70 dB XTALK Channel-to-channel crosstalk RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 7-9 –70 dB BW Bandwidth –3 dB RL = 50 Ω, CL = 5 pF; see Figure 7-10 93 MHz THD Total harmonic distortion RL = 600 Ω, CL = 15pF, VNO = 1VRMS, f = 20 kHz; see Figure 7-11 0.004% CNC(OFF), CNO(OFF) NC, NO OFF capacitance f = 1 MHz; see Figure 7-4 14 pF CCOM(ON), CNC(ON), CNO(ON) COM, NC, NO ON capacitance f = 1 MHz; see Figure 7-4 60 pF 18 ns SUPPLY ICC (1) Positive supply current 0.03 1 μA Specified by design, not subject to production test. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 5 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 6.6 Electrical Characteristics: 12-V Single Supply VCC = 12 V ± 10%, -VCC = 0 V, GND = 0 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS TA= 25°C MIN TYP TA= –40°C to 85°C MAX MIN TYP MAX UNIT ANALOG SWITCH Analog signal range 0 Ron ON-state resistance VNC =0 V to 10.8 V or VNO = 0 V to 10.8 V, ICOM = –10 mA, see Figure 7-1 5 ΔRon ON-state resistance match between channels VNC = 0 V to 10.8 V or VNO = 0 V to 10.8 V, ICOM = –10 mA 1.6 Ron(flat) ON-state resistance flatness VNC = 3.3 V to 7V or VNO = 3.3 V to 7 V, ICOM = –10 mA 1.7 5 2.4 1.8 VCC V 8 Ω 2.6 Ω 3.2 Ω LEAKAGE CURRENTS INC(OFF), INO(OFF) OFF leakage current VNC = 0 V to 10.8 V or VNO = 0 V to 10.8 V, VCOM = 0 V to 10.8 V; see Figure 7-2 –10 ±0.5 10 –50 50 nA INC(ON), INO(ON) ON leakage current VNC = 0 V to 10.8V or VNO = 0 V to 10.8 V, VCOM = open; see Figure 7-3 –10 ±0.5 10 –50 50 nA V DIGITAL INPUTS VINH High-level input voltage 5 VCC VINL Low-level input voltage 0 0.8 V IINL, IINH Input current –0.1 0.1 μA CIN Digital input capacitance VIN = VINL or VINH ±0.005 2.7 pF DYNAMIC (1) tON Turn-ON time RL = 300 Ω, CL = 35 pF, VCOM = 3.3 V; see Figure 7-5 56 85 110 ns tOFF Turn-OFF time RL = 300 Ω, CL = 35 pF, VCOM = 3.3 V; see Figure 7-5 25 30 31 ns tBBM Break-before-make time delay RL = 300 Ω, CL = 35 pF, VNC = VNO = 3.3 V; see Figure 7-6 30 QC Charge injection RGEN = VNC = VNO = 0 V, RGEN = 0 Ω, CL = 1 nF; see Figure 7-7 491 pC OISO OFF isolation RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 7-8 –70 dB XTALK Channel-to-channel crosstalk RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 7-9 –70 dB BW Bandwidth –3 dB RL = 50 Ω, CL = 5 pF, see Figure 7-10 200 MHz THD Total harmonic distortion RL = 600 Ω, CL = 15pF, VNO = 1 VRMS, f = 20 kHz; see Figure 7-11 CNC(OFF), CINO(OFF) NC, NO OFF capacitance f = 1 MHz, see Figure 7-4 14 pF CCOM(ON), CNC(ON), CNO(ON) COM, NC, NO ON capacitance f = 1 MHz, see Figure 7-4 55 pF 19 ns 0.04% SUPPLY ICC (1) 6 Positive supply current 0.07 1 μA Specified by design, not subject to production test. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 6.7 Electrical Characteristics: 5-V Single Supply VCC = 5 V ± 10%, -VCC = 0 V, GND = 0 V, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS TA= 25°C MIN TYP TA= –40°C to 85°C MAX MIN TYP MAX UNIT ANALOG SWITCH Analog signal range 0 VCC V Ron ON-state resistance VNC =0 V to 4.5 V or VNO = 0 V to 4.5 V, ICOM = –10 mA; see Figure 7-1 8 10 12.5 Ω ΔRon ON-state resistance match between channels VNC =0 V to 4.5 V or VNO = 0 V to 4.5 V, ICOM = –10 mA 1 1.1 1.5 Ω Ron(flat) ON-state resistance flatness VNC =0 V to 4.5 V or VNO = 0 V to 4.5 V, ICOM = –10 mA 1.3 2 Ω 1.3 LEAKAGE CURRENTS INC(OFF), INO(OFF) OFF leakage current VNC =0 V to 4.5 V or VNO = 0 V to 4.5 V, VCOM = 0 V to 4.5 V; see Figure 7-2 –1 ±0.5 1 –50 50 nA INC(ON), INO(ON) ON leakage current VNC = 0 V to 4.5V or VNO = 0 V to 4.5 V, VCOM = open; see Figure 7-3 –1 ±0.5 1 –50 50 nA V DIGITAL INPUTS VINH High-level input voltage 2.4 VCC VINL Low-level input voltage 0 0.8 V IINL, IINH Input current –0.1 0.1 μA CIN Digital input capacitance VIN = VINL or VINH 0.01 2.8 pF DYNAMIC(1) tON Turn-ON time RL = 300 Ω, CL = 35 pF, VCOM = 3.3 V; see Figure 7-5 119 145 178 ns tOFF Turn-OFF time RL = 300 Ω, CL = 35 pF, VCOM = 3.3 V; see Figure 7-5 38 47 95.2 ns tBBM Break-before-make time delay RL = 300 Ω, CL = 35 pF, VNC = VNO = 3.3 V; see Figure 7-6 79 QC Charge injection VGEN = VNC = VNO = 0 V, RGEN = 0 Ω, CL = 1 nF; see Figure 7-7 65 pC OISO OFF isolation RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 7-8 –70 dB XTALK Channel-to-channel crosstalk RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 7-9 –70 dB BW Bandwidth –3 dB RL = 50 Ω, see Figure 7-10 152 MHz THD Total harmonic distortion RL = 600 Ω, CL = 15 pF, VNO = 1 VRMS, f = 20 kHz; see Figure 7-11 CNC(OFF), CNO(OFF) NC, NO OFF capacitance f = 1 MHz, see Figure 7-4 15 pF CCOM(ON), CNC(ON), INO(ON) COM, NC, NO ON capacitance f = 1 MHz, see Figure 7-4 55 pF 44 ns 0.04% POWER REQUIREMENTS ICC (1) Positive supply current VIN = 0 V or VCC 0.02 1 μA Specified by design, not subject to production test. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 7 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 6.8 Typical Characteristics 7.0 0.10 0.05 6.0 0.00 -0.05 ON-leakage Current (nA) RON (Ohms) 5.0 4.0 3.0 2.0 -0.10 -0.15 -0.20 -0.25 VCC = 3 V, –VCC = –3 V VCC = 3 V, - VCC = -3 V VCC = 5 V, - VCC = -5 V VCC = 6 V, - VCC = -6 V 1.0 -0.30 VCC = 5 V, –VCC = –5 V VCC = 6 V, –VCC = –6 V -0.35 -0.40 -6.0 0.0 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 -4.0 -2.0 6 0.0 2.0 4.0 6.0 Switch I/O Voltage (V) VIO(V) Figure 6-2. Leakage Current vs I/O Voltage (Switch ON) Figure 6-1. RON vs VIO 3.00 0.05 0.00 2.50 -0.10 -0.15 -0.20 VCC = 3 V, –VCC = –3 V -0.25 VCC = 5 V, –VCC = –5 V Positive Supply Current (nA) OFF-leakage Current (nA) -0.05 2.00 VCC = 3 V, -VCC = -3 V VCC = 5 V, -VCC = -5 V VCC = 6 V, -VCC = -6 V 1.50 1.00 VCC = 6 V, –VCC = –6 V -0.30 0.50 -0.35 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 0.00 -40.00 Switch I/O Voltage (V) Figure 6-3. Leakage Current vs I/O Voltage (Switch OFF) 25.00 85.00 Temperature (degrees C) Figure 6-4. Positive Supply Current vs Temperature 7.0 0.00 -40.00 25.00 85.00 6.0 -0.50 4.0 -1.50 VCC = 3 V, - VCC = -3 V VCC = 5 V, -VCC = -5 V VCC = 6 V, -VCC = -6 V VOUT (V) Negative Supply Current (nA) 5.0 -1.00 3.0 2.0 -2.00 VCC = 3 V, -VCC = -3 V VCC = 5 V, -VCC = -5 V VCC = 6 V, -VCC = -6 V 1.0 -2.50 0.0 -1.0 -3.00 0.0 Temperature (Degrees C) Figure 6-5. Negative Supply Current vs Temperature 8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Control Input Voltage (V) Figure 6-6. Control Input (IN) Threshold Voltage Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 6.8 Typical Characteristics (continued) -5.00 0.0 -2.0 -15.00 -4.0 -25.00 Magnitude (dB) Magnitude (dB) -6.0 -8.0 -10.0 -12.0 -45.00 -55.00 -14.0 -16.0 -18.0 1.00E+6 -35.00 -65.00 10.00E+6 100.00E+6 -75.00 1.00E+6 1.00E+9 Frequency (Hz) 10.00E+6 Figure 6-7. Bandwidth Dual Supply (±5 V) 100.00E+6 1.00E+9 Frequency (Hz) Figure 6-8. Off Isolation vs Frequency Dual Supply (±5 V) 0.050 -5.0 0.045 -15.0 0.040 0.035 0.030 -35.0 THD Magnitude (dB) -25.0 -45.0 12V_0V/NC-COM 12V_0V/NO-COM 5V_0V/NC-COM 5V_0V/NO-COM 5V_5V/NC-COM 5V_5V/NO-COM 0.025 0.020 0.015 -55.0 0.010 -65.0 0.005 -75.0 1.00E+6 0.000 10.00E+6 100.00E+6 10 1.00E+9 100 1000 10000 100000 Frequency Frequency (Hz) Figure 6-10. THD+N (%) vs Frequency Figure 6-9. Crosstalk vs Frequency Dual Supply (±5 V) 600 500 400 Charge Injection (pC) 300 200 100 0 -100 -200 -300 -400 6V 5V 5. 5V 4V 4. 5V 3V 3. 5V 2V 2. 5V 1. 5V 1V 0V 0. 5V -1 V -0 .5 V -2 V -1 .5 V -3 V -2 .5 V -4 V -3 .5 V 5V -5 V -4 .5 V -5 . -6 V -500 Bias Voltage Figure 6-11. Charge Injection vs Bias Voltage Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 9 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 7 Parameter Measurement Information 7.1 Test Circuits Vcc VNO NO COM + VCOM Channel ON R on VI ICOM IN VCOM – VNO I COM VI = VIH or VIL + GND –VCC Figure 7-1. ON-State Resistance Vcc VNO NO COM + VCOM + VI OFF-State Leakage Current Channel OFF VI = VIH or VIL IN + GND –VCC Figure 7-2. OFF-State Leakage Current (ICOM(OFF), INC(OFF)) Vcc VNO NO COM + VI VCOM ON-State Leakage Current Channel ON VI = VIH or VIL IN + GND –VCC Figure 7-3. ON-State Leakage Current (ICOM(ON), INC(ON)) 10 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 VCC VNO NO Capacitance Meter VBIAS = VCC, VIO, or GND and VI = VIO or GND COM COM VI IN Capacitance is measured at NO, COM, and IN inputs during ON and OFF conditions. VBIAS GND –VCC Figure 7-4. Capacitance (CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON)) Vcc NO VCOM VI VNO TEST RL CL VCOM tON 50 Ω 35 pF Vcc tOFF 50 Ω 35 pF Vcc COM CL(2) RL IN Logic Input(1) VIO Logic Input (VI) GND 50% 50% 0 tON –VCC (1) (2) tOFF Switch Output (VNO) 90% 90% All input pulses are supplied by generators having the following characteristics: PRR≤ 10 MHz, Z O = 50 Ω, tr < 5 ns, t f < 5 ns. C L includes probe and jig capacitance. Figure 7-5. Turn-ON (tON) and Turn-OFF Time (tOFF) Vcc Logic Input (VI) VNC or VNO NC or NO VCOM VIO 50% 0 COM NC or NO CL(2) VI Logic Input(1) IN (2) Switch Output (VCOM) 90% 90% tBBM GND –VCC (1) RL VNC or VNO = Vcc /2 RL = 50 Ω CL = 35 pF All input pulses are supplied by generators having the following characteristics: PRR≤ 10 MHz, Z O = 50 Ω, tr < 5 ns, t f < 5 ns. C L includes probe and jig capacitance. Figure 7-6. Break-Before-Make Time Delay (tBBM) Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 11 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 VCC RGEN VGEN Logic Input (VI) VIH OFF ON OFF V IL NO COM + VCOM ∆VCOM VCOM CL(1) VI VGEN = 0 to Vcc IN Logic Input(2) RGEN = 0 CL = 1 nF QC = CL × ∆VCOM VI = VIH or VIL GND –VCC (1) (2) C L includes probe and jig capacitance. All input pulses are supplied by generators having the following characteristics: PRR≤ 10 MHz, Z O = 50 Ω, tr < 5 ns, t f < 5 ns. Figure 7-7. Charge Injection (QC) Vcc Network Analyzer Channel OFF: NO to COM 50 W VNO NO VI = VIO or GND COM Source Signal VCOM 50 W Network Analyzer Setup VI 50 W Source Power = 0 dBm (632-mV P-P at 50-Wload) IN + GND DC Bias = 350 mV –VCC Figure 7-8. OFF Isolation (OISO) Vcc Network Analyzer 50 W VNO1 Source Signal VNO2 NO1 NO2 COM2 50 W VI Channel ON: NO to COM COM1 Network Analyzer Setup 50 W Source Power = 0 dBm (632 mV P-P at 50 Wload) IN + DC Bias = 350 mV GND –VCC Figure 7-9. Channel-to-Channel Crosstalk (XTALK) 12 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 VCC Network Analyzer 50 W VNO NO Channel ON: NO to COM COM VCOM VI = VIH or VIL Source Signal Network Analyzer Setup VI 50 W IN Source Power = 0 dBm (632-mV P-P at 50-Wload) + GND DC Bias = 350 mV –VCC Figure 7-10. Bandwidth (BW) Channel ON: COM to NO VSOURCE = Vcc P-P VI = (VIO – Vcc/2) or −Vcc /2 RL = 600 Ω fSOURCE = 20 Hz to 20 kHz CL = 50 pF Vcc /2 Audio Analyzer NO Source Signal COM CL(1) 600 VI IN 600 −Vcc /2 (1) –VCC C L includes probe and jig capacitance. Figure 7-11. Total Harmonic Distortion Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 13 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 8 Detailed Description 8.1 Overview The TS12A12511 is a bidirectional, single channel, single-pole double-throw (SPDT) analog switch that can pass signals with swings of 0 to 12 V or –6 V to 6 V. This switch conducts equally well in both directions when it is on. It also offers a low ON-state resistance of 5 Ω (typical), which is matched to within 1 Ω between channels. The maximum current consumption is < 1 μA and –3 dB bandwidth is > 93 MHz. The TS12A12511 exhibits break-before-make switching action, preventing momentary shorting when switching channels. This device is available in an 8-lead MSOP, 8-lead SOT-23, and 8-pin QFN package. 8.2 Functional Block Diagram SPDT NC COM NO IN 8.3 Feature Description The TS12A12511 can pass signals with swings of 0 to 12 V or –6 V to 6. The device is great for applications where the AC signals do not have a common mode voltage since both the positive and negative swing of the signal can be passed through the device with little distortion. 8.4 Device Functional Modes Table 8-1. Truth Table 14 IN NC TO COM, COM TO NC L On Off H Off On Submit Document Feedback NO TO COM, COM TO NO Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 9 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality. 9.1 Application Information Analog signals that range over the entire supply voltage (VCC to GND) or (VCC to -VCC) can be passed with very little change in ON-state resistance. The switches are bidirectional, so the NO, NC, and COM pins can be used as either inputs or outputs. 9.2 Typical Application 12 V 0.1 F 0.1 F VCC SPST switch System Digital Control IN Signal Path COM NO Device 1 12 V 0.1
F NC GND/-VCC Device 2 12 V 0.1 F 3.3 V Figure 9-1. Typical Application Schematic 9.2.1 Design Requirements Pull the digitally controlled input select pin IN to VCC or GND to avoid unwanted switch states that could result if the logic control pin is left floating. 9.2.2 Detailed Design Procedure Select the appropriate supply voltage to cover the entire voltage swing of the signal passing through the switch since the TS12A12511 input or output signal swing of the device is dependant of the supply voltage VCC and -VCC. Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 15 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 9.2.3 Application Curve 7.0 6.0 RON (Ohms) 5.0 4.0 3.0 2.0 VCC = 3 V, - VCC = -3 V VCC = 5 V, - VCC = -5 V VCC = 6 V, - VCC = -6 V 1.0 0.0 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 VIO(V) Figure 9-2. RON vs VIO 16 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 10 Power Supply Recommendations Proper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximum ratings, because stresses beyond the listed ratings can cause permanent damage to the device. Always sequence VCC and -VCC on first, followed by NO, NC, or COM. Although it is not required, power-supply bypassing improves noise margin and prevents switching noise propagation from the VCC supply to other components. A 0.1-μF capacitor, connected from VCC to GND, is adequate for most applications. 11 Layout 11.1 Layout Guidelines It is recommended to place a bypass capacitor as close to the supply pins, VCC and -VCC, as possible to help smooth out lower frequency noise and provide better load regulation across the frequency spectrum. Minimize trace lengths and vias on the signal paths to preserve signal integrity. 11.2 Layout Example LEGEND Polygonal Copper Pour VIA to Power Plane VIA to GND Plane To System Bypass Capacitor To System 1 COM NO 8 2 NC -VCC 7 3 GND IN 6 4 VCC N.C. 5 -Vcc To System To System Vcc Bypass Capacitor Figure 11-1. Layout Schematic Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 17 TS12A12511 www.ti.com SCDS248E – OCTOBER 2009 – REVISED SEPTEMBER 2022 12 Device and Documentation Support 12.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 12.2 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 12.3 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.5 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 18 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TS12A12511 PACKAGE OPTION ADDENDUM www.ti.com 3-Jun-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TS12A12511DCNR ACTIVE SOT-23 DCN 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 NFHS HFHA Samples TS12A12511DGKR ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 2US 2UA Samples TS12A12511DRJR ACTIVE SON DRJ 8 1000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 ZVE Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of