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TS12A44513, TS12A44514, TS12A44515
SCDS247B – OCTOBER 2008 – REVISED FEBRUARY 2016
TS12A4451x Low ON-State Resistance 4-Channel SPST CMOS Analog Switches
1 Features
3 Description
•
•
The TS12A44513, TS12A44514, and TS12A44515
devices have four bidirectional single-pole singlethrow (SPST) single-supply CMOS analog switches.
The TS12A44513 has two normally closed (NC)
switches and two normally open (NO) switches, the
TS12A44514 has four NO switches, and the
TS12A44515 has four NC switches.
1
•
•
•
•
•
•
•
•
2-V to 12-V Single-Supply Operation
Specified ON-State Resistance:
– 15-Ω Maximum With 12-V Supply
– 20-Ω Maximum With 5-V Supply
– 50-Ω Maximum With 3.3-V Supply
ΔRON Matching
– 2.5-Ω (Max) at 12 V
– 3-Ω (Max) at 5 V
– 3.5-Ω (Max) at 3.3 V
Specified Low OFF-Leakage Currents:
– 1 nA at 25°C
– 10 nA at 85°C
Specified Low ON-Leakage Currents:
– 1 nA at 25°C
– 10 nA at 85°C
Low Charge Injection: 11.5 pC (12-V Supply)
Fast Switching Speed:
tON = 80 ns, tOFF = 50 ns (12-V Supply)
Break-Before-Make Operation (tON > tOFF)
TTL/CMOS-Logic Compatible With 5-V Supply
Available in 14-Pin TSSOP Package or 14-Pin
SOIC Package
These CMOS switches may operate continuously
with a single supply from 2 V to 12 V and can handle
rail-to-rail analog signals. The OFF-leakage current
maximum is only 1 nA at 25°C or 10 nA at 85°C.
When using a 5-V supply, all digital inputs have 0.8-V
to 2.4-V logic thresholds, ensuring TTL/CMOS-logic
compatibility.
Device Information(1)
PART NUMBER
TS12A44513,
TS12A44514,
TS12A44515
PACKAGE
BODY SIZE (NOM)
TSSOP (14)
5.00 mm x 4.4 mm
SOIC (14)
8.65 mm x 3.91 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplified Schematic
SPST
NO1
COM1
2 Applications
•
•
•
•
Data Acquisition Systems
Communication Circuits
Signal Routing
Computer Peripherals
IN1
SPST
NO2
COM2
IN2
SPST
NO3
COM3
IN3
SPST
NO4
COM4
IN4
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS12A44513, TS12A44514, TS12A44515
SCDS247B – OCTOBER 2008 – REVISED FEBRUARY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
4
4
5
6
7
9
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics for 5-V Supply ..................
Electrical Characteristics for 12-V Supply ................
Electrical Characteristics for 3-V Supply ..................
Typical Characteristics ..............................................
Detailed Description ............................................ 10
7.1 Overview ................................................................. 10
7.2 Functional Block Diagram ....................................... 10
7.3 Feature Description................................................. 10
7.4 Device Functional Modes........................................ 10
8
Application and Implementation ........................ 11
8.1 Application Information............................................ 11
8.2 Typical Application .................................................. 12
9 Power Supply Recommendations...................... 13
10 Layout................................................................... 14
10.1 Layout Guidelines ................................................. 14
10.2 Layout Example .................................................... 14
11 Device and Documentation Support ................. 15
11.1
11.2
11.3
11.4
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
15
15
15
15
12 Mechanical, Packaging, and Orderable
Information ........................................................... 15
4 Revision History
Changes from Revision A (November 2014) to Revision B
Page
•
Changed VCC min value from 0 to 2 in Recommended Operating Conditions table .............................................................. 4
•
Added Supply column back into all Electrical Characteristics tables ..................................................................................... 6
Changes from Original (October 2008) to Revision A
•
2
Page
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
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Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: TS12A44513 TS12A44514 TS12A44515
TS12A44513, TS12A44514, TS12A44515
www.ti.com
SCDS247B – OCTOBER 2008 – REVISED FEBRUARY 2016
5 Pin Configuration and Functions
D OR PW PACKAGE...TS12A44513
(TOP VIEW)
NO1
D OR PW PACKAGE...TS12A44514
(TOP VIEW)
14 VCC
1
13 IN1
COM1 2
NO1
12 IN4
NC2
3
COM2
4
11 NC4
IN2
5
10 COM4
IN3
6
9
COM3
GND
7
8
NO3
14 VCC
NC1
13 IN1
COM1 2
1
COM1 2
D OR PW PACKAGE...TS12A44515
(TOP VIEW)
12 IN4
NO2
3
COM2
4
11 NO4
IN2
5
10 COM4
IN3
6
9
COM3
GND
7
8
NO3
1
14 VCC
13 IN1
12 IN4
NC2
3
COM2
4
11 NC4
IN2
5
10 COM4
IN3
6
9
COM3
GND
7
8
NC3
Pin Functions
PIN
NAME
I/O
DESCRIPTION
TS12A44513
TS12A44514
TS12A44515
COM
2, 4, 9, 10
2, 4, 9, 10
2, 4, 9, 10
I/O
VCC
14
14
14
I
Power supply
5, 6, 12, 13
5, 6, 12, 13
5, 6, 12, 13
I
Digital control to connect COM to NO or NC
IN
GND
Common
7
7
7
GND
NO
1, 8
1, 3, 8, 11
–
I/O
Normally open
NC
3, 11
–
1, 3, 8, 11
I/O
Normally closed
Copyright © 2008–2016, Texas Instruments Incorporated
Ground
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3
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SCDS247B – OCTOBER 2008 – REVISED FEBRUARY 2016
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6 Specifications
6.1 Absolute Maximum Ratings (1) (2) (3)
MIN
MAX
UNIT
VCC
Supply voltage
–0.3
13
V
VNC
VNO
VCOM
Analog voltage (4)
–0.3
VCC + 0.3
V
INC
INO
ICOM
IIN
Analog current
-20
20
mA
±30
mA
TA
Operating temperature
85
°C
PD
Power dissipation
0.88
W
Tstg
Storage temperature
150
°C
(1)
(2)
(3)
(4)
Peak current (pulsed at 1 ms, 10% duty cycle)
–40
Mounted on JEDEC 4-layer board (JESD
51-7), No airflow, TA = 25°C, TJ = 125°C
PW package
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
Voltages referenced to GND
Voltages exceeding VCC or GND on any signal terminal are clamped by internal diodes. Limit forward-diode current to maximum current
rating.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC
2
12
UNIT
V
VNC, VNO, VCOM, VIN
0
VCC
V
6.4 Thermal Information
THERMAL METRIC (1)
TS12A44513, TS12A44514,
TS12A44515
D
PW
14 PINS
14 PINS
RθJA
Junction-to-ambient thermal resistance
89.8
119.6
RθJC(top)
Junction-to-case (top) thermal resistance
49.6
48.4
RθJB
Junction-to-board thermal resistance
44.4
61.3
ψJT
Junction-to-top characterization parameter
13.8
5.7
ψJB
Junction-to-board characterization parameter
44.1
60.7
(1)
4
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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Product Folder Links: TS12A44513 TS12A44514 TS12A44515
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SCDS247B – OCTOBER 2008 – REVISED FEBRUARY 2016
6.5 Electrical Characteristics for 5-V Supply (1)
VCC = 4.5 V to 5.5 V, VINH = 2.4 V, VINL = 0.8 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP (2)
TA
MAX
UNIT
VCC
V
ANALOG SWITCH
VCOM, VNO,
VNC
Analog signal range
Ron
ON-state resistance
VCC = 4.5 V, VCOM = 3.5 V,
ICOM = 1 mA
25°C
Ron(flat)
ON-state resistance
flatness
VCOM = 1 V, 2 V, 3 V,
ICOM = 1 mA
25°C
ΔRon
ON-state resistance
matching between channels (3)
VCC = 4.5 V, ICOM = 5 mA,
VNO or VNC = 3 V
INO(OFF),
INC(OFF)
NO, NC
OFF leakage current (4)
VCC = 5.5 V, VCOM = 1 V,
VNO or VNC = 4.5 V
25°C
1
Full
10
ICOM(OFF)
COM
OFF leakage current (4)
VCC = 5.5 V, VCOM = 1 V,
VNO or VNC = 4.5 V
25°C
1
Full
10
ICOM(ON)
COM
ON leakage current (4)
VCC = 5.5 V, VCOM = 4.5 V,
VNO or VNC = 4.5 V
25°C
1
Full
10
0
12
Full
20
30
1
3
Full
4
25°C
3
TMIN to TMAX
4
Ω
Ω
Ω
nA
nA
nA
DIGITAL CONTROL INPUT (IN)
VIH
Input logic high
Full
2.4
Full
0
VCC
VIL
Input logic low
IIH, IIL
Input leakage current
VIN = VCC, 0 V
tON
Turn-on time
see Figure 2
tOFF
Turn-off time
see Figure 2
QC
Charge injection (5)
CL = 1 nF, VNO = 0 V,
RS = 0 Ω, See Figure 1
25°C
–1.5
pC
CNO(OFF),
CNC(OFF)
NO, NC
OFF capacitance
f = 1 MHz, See Figure 4
25°C
8
pF
CCOM(OFF)
COM
OFF capacitance
f = 1 MHz, See Figure 4
25°C
8
pF
CCOM(ON)
COM
ON capacitance
f = 1 MHz, See Figure 4
25°C
19
pF
CI
Digital input capacitance
VIN = VCC, 0 V
25°C
2
pF
BW
Bandwidth
RL = 50 Ω, CL = 15 pF,
VNO = 1 VRMS,
25°C
530
MHz
OISO
OFF isolation
RL = 50 Ω, CL = 15 pF,
VNO = 1 VRMS, f = 100 kHz
25°C
–94
dB
THD
Total harmonic distortion
RL = 50 Ω, CL = 15 pF,
VNO = 1 VRMS, f = 100 kHz
25°C
0.09%
Supply Current
VIN = VCC, 0 V
25°C
0.05
Full
0.1
Full
V
0.8
V
0.01
μA
DYNAMIC
25°C
45
Full
100
125
25°C
35
Full
50
70
ns
ns
SUPPLY
ICC
(1)
(2)
(3)
(4)
(5)
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
Typical values are at TA = 25°C.
ΔRON = RON(MAX) – RON(MIN)
Leakage parameters are 100% tested at maximum-rated hot operating temperature, and are ensured by correlation at 25°C.
Specified by design, not production tested
Copyright © 2008–2016, Texas Instruments Incorporated
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SCDS247B – OCTOBER 2008 – REVISED FEBRUARY 2016
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6.6 Electrical Characteristics for 12-V Supply (1)
VCC = 11.4 V to 12.6 V, VINH = 5 V, VINL = 0.8 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN TYP (2)
MAX
UNIT
VCC
V
ANALOG SWITCH
VCOM, VNO,
VNC
Analog signal range
Ron
ON-state resistance
VCC = 11.4 V, VCOM = 10 V,
ICOM = 1 mA
25°C
ON-state resistance
flatness
VCC = 11.4 V,
VCOM = 2 V, 5 V, 10 V,
ICOM = 1 mA
25°C
Ron(flat)
ΔRon
ON-state resistance
matching between channels (3)
VCC = 11.4 V, ICOM = 5 mA,
VNO or VNC = 10 V
INO(OFF),
INC(OFF)
NO, NC
OFF leakage current (4)
ICOM(OFF)
ICOM(ON)
0
6.5
Full
10
15
1.5
Ω
3
Full
4
25°C
2.5
TMIN to TMAX
3
VCC = 12.6 V, VCOM = 1 V,
VNO or VNC = 10 V
25°C
1
Full
10
COM
OFF leakage current (4)
VCC = 12.6 V, VCOM = 1 V,
VNO or VNC = 10 V
25°C
1
Full
10
COM
ON leakage current (4)
VCC = 12.6 V, VCOM = 10 V,
VNO or VNC = 10 V
25°C
1
Full
10
Ω
Ω
nA
nA
nA
DIGITAL CONTROL INPUT (IN)
VIH
Input logic high
Full
5
Full
0
VCC
VIL
Input logic low
IIH, IIL
Input leakage current
VIN = VCC, 0 V
tON
Turn-on time
See Figure 2
tOFF
Turn-off time
See Figure 2
QC
Charge injection (5)
CL = 1 nF, VNO = 0 V,
RS = 0 Ω, See Figure 1
25°C
–10.5
pC
CNO(OFF),
CNC(OFF)
NO, NC
OFF capacitance
f = 1 MHz, See Figure 4
25°C
8
pF
CCOM(OFF)
COM
OFF capacitance
f = 1 MHz, See Figure 4
25°C
8
pF
CCOM(ON)
COM
ON capacitance
f = 1 MHz, See Figure 4
25°C
21.5
pF
CI
Digital input capacitance
VIN = VCC, 0 V
25°C
2
pF
BW
Bandwidth
RL = 50 Ω, CL = 15 pF,
VNO = 1 VRMS,
25°C
530
MHz
OISO
OFF isolation
RL = 50 Ω, CL = 15 pF,
VNO = 1 VRMS, f = 100 kHz
25°C
–95
dB
THD
Total harmonic distortion
RL = 50 Ω, CL = 15 pF,
VNO = 1 VRMS, f = 100 kHz
25°C
0.07%
Supply Current
VIN = VCC, 0 V
25°C
0.05
Full
0.2
Full
V
0.8
V
0.001
μA
DYNAMIC
25°C
25
Full
25°C
75
80
20
Full
45
50
ns
ns
SUPPLY
ICC
(1)
(2)
(3)
(4)
(5)
6
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
Typical Values are at TA = 25°C.
ΔRON = RON(MAX) – RON(MIN)
Leakage parameters are 100% tested at maximum-rated hot operating temperature, and are ensured by correlation at 25°C.
Specified by design, not production tested
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SCDS247B – OCTOBER 2008 – REVISED FEBRUARY 2016
6.7 Electrical Characteristics for 3-V Supply (1)
VCC = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP (2)
TA
MAX
UNIT
VCC
V
ANALOG SWITCH
VCOM, VNO,
VNC
Analog signal range
Ron
ON-state resistance
VCC = 3 V, VCOM = 1.5 V,
INO = 1 mA,
25°C
ON-state resistance
flatness
VCC = 3 V,
VCOM = 1 V, 1.5 V, 2 V,
ICOM = 1 mA
25 °C
Ron(flat)
ΔRon
ON-state resistance
matching between channels (3)
VCC = 2.7 V, ICOM = 5 mA,
VNO or VNC = 1.5 V
INO(OFF),
INC(OFF)
NO, NC
OFF leakage current (4)
VCC = 3.6 V, VCOM = 1 V,
VNO or VNC = 3 V
25°C
1
Full
10
ICOM(OFF)
COM
OFF leakage current (4)
VCC = 3.6 V, VCOM = 1 V,
VNO or VNC = 3 V
25°C
1
Full
10
ICOM(ON)
COM
ON leakage current (4)
VCC = 3.6 V, VCOM = 3 V,
VNO or VNC = 3 V
25°C
1
Full
10
0
20
Full
40
50
1
Ω
3
Full
4
25°C
3.5
TMIN to TMAX
4.5
Ω
Ω
nA
nA
nA
DIGITAL CONTROL INPUT (IN)
VIH
Input logic high
Full
2.4
Full
0
VCC
VIL
Input logic low
IIH, IIL
Input leakage current
VIN = VCC, 0 V
tON
Turn-on time (5)
See Figure 2
tOFF
Turn-off time (5)
See Figure 2
QC
Charge injection (5)
CL = 1 nF, See Figure 1
25°C
–0.5
pC
CNO(OFF),
CNC(OFF)
NO, NC
OFF capacitance
f = 1 MHz, See Figure 4
25°C
8
pF
CCOM(OFF)
COM
OFF capacitance
f = 1 MHz, See Figure 4
25°C
8
pF
CCOM(ON)
COM
ON capacitance
f = 1 MHz, See Figure 4
25°C
17
pF
CI
Digital input capacitance
VIN = VCC, 0 V
25°C
2
pF
BW
Bandwidth
RL = 50 Ω, CL = 15 pF,
VNO = 1 VRMS, f = 100 kHz
25°C
510
MHz
OISO
OFF isolation
RL = 50 Ω, CL = 15 pF,
VNO = 1 VRMS, f = 100 kHz
25°C
–94
dB
THD
Total harmonic distortion
RL = 50 Ω, CL = 15 pF,
VNO = 1 VRMS, f = 100 kHz
25°C
0.27%
Supply Current
VIN = VCC, 0 V
25°C
0.05
Full
0.2
Full
V
0.8
V
0.01
μA
DYNAMIC
25°C
70
Full
120
175
25°C
50
Full
80
120
ns
ns
SUPPLY
ICC
(1)
(2)
(3)
(4)
(5)
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
Typical values are at TA = 25°C.
ΔRON = RON(MAX) – RON(MIN)
Leakage parameters are 100% tested at maximum-rated hot operating temperature, and are ensured by correlation at 25°C.
Specified by design, not production tested
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SCDS247B – OCTOBER 2008 – REVISED FEBRUARY 2016
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VCC
VCC
NO
TS12A44513
TS12A44514
TS12A44515
VIN
IN
VCC
VIN
0V
VNO or VNC = 0 V
TS12A44514
TS12A44515
VOUT
COM
VOUT
GND
∆VOUT
CL
1000 pF
50Ω
∆VOUT is the measured voltage due to charge
transfer error Q when the channel turns off.
Q = VOUT x CL
Figure 1. Charge Injection
VCC
VCC
NO
0V
VNO
TS12A44513
TS12A44514
VIN
IN
50%
VIN
VCC
VNOPEAK
COM
90%
90%
VOUT
VOUT
GND
50Ω
35 pF
300Ω
0V
tON
VCC
VCC
0V
VNO
NC
TS12A44513
TS12A44515
VNOPEAK
COM
IN
90%
VOUT
GND
50Ω
50%
VIN
VCC
VIN
tOFF
300Ω
35 pF
90%
VOUT
0V
tOFF
tON
Figure 2. Switching Times
VCC 10 nF
VCC
NO
VCC
VIN
50Ω
VCC
50Ω
TS12A44513/14/15
VCC
VOUT
TS12A44513/14/15
MEAS
IN
COM
GND
GND
1-MHz
Capacitance
Analyzer
50Ω 50Ω
Measurements are standardized against short at socket
terminals. OFF isolation is measured between COM and OFF
terminals on each switch. ON loss is measured between COM
and ON terminals on each switch. Signal direction through
switch is reversed; worst values are recorded.
OFF Isolation = 20log
VOUT
VIN
ON Loss = 20log
VOUT
VIN
Figure 3. Off Isolation and On Loss
8
As
Required
REF
COM
IN
NO
or
NC
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Figure 4. NO, NC, and COM Capacitance
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SCDS247B – OCTOBER 2008 – REVISED FEBRUARY 2016
6.8 Typical Characteristics
25
30
TA = 85°C
25
20
15
ON-State Resistance, RON (Ω)
ON-State Resistance, RON (Ω)
VCC = 3 V
VCC = 4.5 V
10
VCC = 11.4 V
5
0
TA = 25°C
20
TA = –40°C
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10 11 12
0
1
Analog Signal, VCOM (V)
3
4
Analog Signal, VCOM (V)
Figure 5. RON vs VCOM (TA = 25°C)
Figure 6. RON vs VCOM (VCC = 3 V)
25
ON-State Resistance, RON (Ω)
25
ON-State Resistance, RON (Ω)
2
20
TA = 85°C
15
TA = 25°C
TA = –40°C
10
5
20
TA = 85°C
15
TA = 25°C
TA = –40°C
10
5
VCC = 5.5 V
0
0
0
1
2
3
4
Analog Signal, VCOM (V)
Figure 7. RON vs VCOM (VCC = 4.5 V)
Copyright © 2008–2016, Texas Instruments Incorporated
5
0
1
2
3
4
5
6
7
8
9
10 11 12
Analog Signal, VCOM (V)
Figure 8. RON vs VCOM (VCC = 11.4 V)
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7 Detailed Description
7.1 Overview
The TS12A4451x has 4 bidirectional single-pole single-throw (SPST) single-supply CMOS analog switches.
The TS12A44513 has two normally closed (NC) switches and two normally open (NO) switches, the
TS12A44514 has four normally open (NO) switches, and the TS12A44515 has four normally closed (NC)
switches .
These CMOS switches can operate continuously with a single supply between 2 V and 12 V and can handle
rail-to-rail analog signals. The OFF-leakage current maximum is only 1 nA at 25°C or 10 nA at 85°C.
When using a 5-V supply, all digital inputs have 0.8-V to 2.4-V logic thresholds, ensuring TTL/CMOS-logic
compatibility.
7.2 Functional Block Diagram
SPST
NO1
COM1
IN1
SPST
NO2
COM2
IN2
SPST
NO3
COM3
IN3
SPST
NO4
COM4
IN4
7.3 Feature Description
The TS12A4451x is bidirectional with fast switching times in the 10's of ns range which allows data acquisition
and communication between multiple devices.
With a 5-V supply these devices are compatible with standard 1.8-V TTL/CMOS logic.
7.4 Device Functional Modes
Table 1. Function Table
10
IN
NO TO COM, COM TO NO
L
OFF
ON
H
ON
OFF
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NC TO COM, COM TO NC
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The switches are bidirectional, so the NO, NC, and COM pins can be used as either inputs or outputs.
8.1.1 Logic-Level Thresholds
The logic-level thresholds are CMOS/TTL compatible when VCC is 5 V. As VCC is raised, the level threshold
increases slightly. When VCC reaches 12 V, the level threshold is about 3 V – above the TTL-specified high-level
minimum of 2.8 V, but still compatible with CMOS outputs.
CAUTION
Do not connect the TS12A44513/TS12A44514/MAS4515 VCC to 3 V and then connect
the logic-level pins to logic-level signals that operate from 5-V supply. Output levels
can exceed 3 V and violate the absolute maximum ratings, damaging the part and/or
external circuits.
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8.2 Typical Application
3.3 V
0.1 PF
0.1 PF
VCC
SPST switch
System
Controller
IN1
IN2
IN3
IN4
Switch
Control
Logic
3.3 V
Device 1
NO1
0.1 PF
COM1
COM2
Signal
Path
NO2
3.3 V
Device 1
0.1 PF
COM3
COM4
3.3 V
Device 1
NO3
0.1 PF
3.3 V
Device 1
NO4
GND
0.1 PF
Figure 9. Typical Application Schematic
8.2.1 Design Requirements
Ensure that all of the signals passing through the switch are with in the specified ranges to ensure proper
performance.
Table 2. Design Parameters
MIN
MAX
VCC
0
12
UNIT
V
VNC, VNO, VCOM, VIN
0
VCC
V
8.2.2 Detailed Design Procedure
The TS12A4451x can be properly operated without any external components. However, it is recommended that
unused pins be connected to ground through a 50-Ω resistor to prevent signal reflections back into the device. It
is also recommended that the digital control pins (INX) be pulled up to VCC or down to GND to avoid undesired
switch positions that could result from the floating pin.
12
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8.2.3 Application Curve
25
ON-State Resistance, RON (Ω)
VCC = 3 V
20
15
VCC = 4.5 V
10
VCC = 11.4 V
5
0
0
1
2
3
4
5
6
7
8
9
10 11 12
Analog Signal, VCOM (V)
Figure 10. ON-State Resistance, RON vs Analog Signal, VCOM
9 Power Supply Recommendations
The TS12A4451x construction is typical of most CMOS analog switches, except that they have only two supply
pins: VCC and GND. VCC and GND drive the internal CMOS switches and set their analog voltage limits.
Reverse ESD-protection diodes connected in series are internally connected between each analog-signal pin and
both VCC and GND. If an analog signal exceeds VCC or GND, one of the diodes will be forward biased, but the
other will be reverse biased preventing current flow.
Virtually all the analog leakage current comes from the ESD diodes to VCC or GND. Although the ESD diodes on
a given signal pin are identical and, therefore, fairly well balanced, they are reverse biased differently. Each is
biased by either VCC or GND and the analog signal. This means their leakages will vary as the signal varies. The
difference in the two diode leakages to the VCC and GND pins constitutes the analog-signal-path leakage
current. All analog leakage current flows between each pin and one of the supply terminals, not to the other
switch terminal. This is why both sides of a given switch can show leakage currents of the same or opposite
polarity.
There is no direct connection between the analog-signal paths and VCC or GND.
VCC and GND also power the internal logic and logic-level translators. The logic-level translators convert the
logic levels to switched VCC and GND signals to drive the analog signal gates.
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10 Layout
10.1 Layout Guidelines
High-speed switches require proper layout and design procedures for optimum performance. Reduce stray
inductance and capacitance by keeping traces short and wide. Ensure that bypass capacitors are as close to the
device as possible. Use large ground planes where possible.
10.2 Layout Example
LEGEND
Polygonal Copper Pour
VIA to Power Plane
VIA to GND Plane
Bypass Capacitor
V+
To System
1
NO1
V+ 14
To System
To System
2 COM1
IN1
13
3 NO2
IN4
12
To System
To System
To System
To System
4 COM2
NO4 11
To System
To System
5 IN2
COM4 10
6 IN3
COM3 9
To System
To System
To System
7 GND
NO3 8
Figure 11. Layout Schematic
14
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11 Device and Documentation Support
11.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TS12A44513
Click here
Click here
Click here
Click here
Click here
TS12A44514
Click here
Click here
Click here
Click here
Click here
TS12A44515
Click here
Click here
Click here
Click here
Click here
11.2 Trademarks
All trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS12A44513DR
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TS12A44513
TS12A44513PWR
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
YD4513
TS12A44514DR
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TS12A44514
TS12A44514PWR
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
YD4514
TS12A44515DR
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
TS12A44515
TS12A44515PWR
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
YD4515
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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