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TS3A227EYFFR

TS3A227EYFFR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    DSBGA16

  • 描述:

    具有 I2C 的 60mΩ、4.5V、自主音频附件检测和配置开关

  • 数据手册
  • 价格&库存
TS3A227EYFFR 数据手册
Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 TS3A227E Autonomous Audio Accessory Detection and Configuration Switch 1 Features 3 Description • • The TS3A227E is an autonomous audio accessory detection and configuration switch that detects 3-pole or 4-pole audio accessories and configures internal switches to route the signals accordingly. 1 • • • • • • • • • Supple Range of 2.5 V to 4.5 V Accessory Insertion/Removal Detection with Adjustable De-bounce Timings Accessory Configuration Detection: – Stereo 3-pole Headphone – 4-pole Standard Headset with MIC on Sleeve – 4-pole OMTP Headset with MIC on Ring2 Key Press Detection for Up to 4 Keys Ultra Low Ground FET RON of 60 mΩ Power Off Noise Removal Isolation of MICBIAS From Audio Jack to Remove Click/Pop Noise Integrated Codec Sense Line Manual I2C Control FM Transmission Capability Dual Small Package Options – 16 Pin DSBGA – 16 Pin QFN 2 Applications • • • • Mobile Phones Tablets Notebooks and Ultrabooks Anywhere a 3.5 mm Audio Jack is Used The internal ground FETS of the TS3A227E have an ultra-low RON of 60 mΩ to minimize crosstalk impact. The ground FETs are also designed to pass FM signals, making it possible to use the ground line of the accessory as an FM antenna in mobile audio applications. Internal isolation switches allow the TS3A227E to remove the click/pop noise that can be generated during and insertion or removal of an audio accessory. In addition depletion FETs prevent a floating ground while the device is unpowered, removing the humming noise present when leaving accessories plugged into an unpowered system. A low-power sleep mode is provided which shuts down internal circuitry to achieve very low quiescent current draw when no headset is inserted. The TS3A227E features integrated key press detection for detecting up to 4 keys with press and release support. Manual I2C control allows the TS3A227E to adapt to application needs by providing control over debounce settings and switch states. Device Information(1) PART NUMBER TS3A227E PACKAGE BODY SIZE (NOM) QFN (16) 3.50 mm × 3.50 mm DSBGA (16) 1.79 mm × 1.79 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. 4 Simplified Schematic BATTERY Audio Codec TS3A227E Application Processor L R L R G M L R M G G 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Simplified Schematic............................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 8 9 1 1 1 1 2 3 4 Absolute Maximum Ratings ...................................... 4 ESD Ratings ............................................................ 4 Recommended Operating Conditions....................... 5 Thermal Information .................................................. 5 Electrical Characteristics........................................... 6 I2C Interface Timing Characteristics ......................... 8 Timing Diagrams ....................................................... 9 Typical Characteristics ............................................ 12 Parameter Measurement Information ................ 12 Detailed Description ............................................ 17 9.1 Overview ................................................................. 17 9.2 9.3 9.4 9.5 9.6 Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ Register Maps ........................................................ Register Field Descriptions ..................................... 18 19 20 24 24 10 Application and Implementation........................ 33 10.1 Application Information.......................................... 33 10.2 Typical Application ............................................... 33 11 Power Supply Recommendations ..................... 47 12 Layout................................................................... 48 12.1 Layout Guidelines ................................................. 48 12.2 Layout Example (QFN) ......................................... 48 12.3 Layout Example (DSBGA) .................................... 49 13 Device and Documentation Support ................. 50 13.1 Trademarks ........................................................... 50 13.2 Electrostatic Discharge Caution ............................ 50 13.3 Glossary ................................................................ 50 14 Mechanical, Packaging, and Orderable Information ........................................................... 50 5 Revision History Changes from Revision A (December 2014) to Revision B Page • Added DSBGA package to the Thermal Information table. ................................................................................................... 5 • Updated SWITCH RESISTANCE for the DSBGA package. ................................................................................................. 6 Changes from Original (July 2014) to Revision A • 2 Page Initial release of full version document. ................................................................................................................................. 1 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 6 Pin Configuration and Functions DSBGA – YFF Top View QFN – RVA Top View SLEEVE_ SENSE SLEEVE GNDA RING2 D RING2_ SENSE SCL INT TIP C MICP SDA GND_ SENSE DET_ TRIGGER GND VDD MIC_ PRESENT GND B GND 1 GND 2 INT 1 TIP 2 DET_TRIGGER 3 MC_PRESENT 4 16 15 14 13 12 RING2 11 GNDA THERMALPAD SDA 3 10 SLEEVE VDD 4 9 SCL A 7 8 RING2_SENSE SLEEVE_SENSE GND_SENSE 6 MICP 5 Pin Functions PIN NAME TYPE DESCRIPTION RVA YFF DET_TRIGGER 15 B1 I/O GND 1, 2 A2, B2 GND GNDA 11 D2 I/O Ground connection for the internal ground FETs of the TS3A227E. If FM is being supported connect this pin to the FM matching network. If FM is not being support connect this pin to system ground. GND_SENSE 5 A4 I/O Ground sense line for the codec. INT 13 C2 GND MIC_PRESENT 16 A1 I/O Open drain output to indicate to the host that a headset with a microphone is inserted.. MICP 6 B4 I/O Microphone signal connection to the codec. Microphone bias is applied to this pin. RING2 12 D1 O Headset current return path if RING2 is ground for the headset. Connect to 3.5 mm jack RING2 connection with low DC resistance trace. RING2_SENSE 7 C4 GND SCL 9 C3 I SDA 3 B3 I/O Bidirectional data from/to I2C bus. This can be connected to VDD if I2C is not used. SLEEVE 10 D3 O Headset current return path if SLEEVE is GND for headset. Connect to 3.5 mm jack SLEEVE connection with low DC resistance trace. SLEEVE_SENSE 8 D4 GND Connected to the SLEEVE pin of the 3.5 mm jack. If SLEEVE pin on plug in is MIC signal, this is connected to MICP. If not, this is connected to GND_SENSE and becomes the ground sensing feedback for the accessory GND The THERMAL PAD of the RVA – QFN package must be connected to any internal PCB ground plane using multiple vias for best thermal performance. THERMAL PAD TIP 14 C1 I/O VDD 4 A3 PWR A falling edge from high to low on this pin triggers accessory detection. This pin can be connected the headset jack to allow automatic pull-down to ground after headset insertion to initialize detection. Primary ground connection for the TS3A227E. Must be connected to system ground. Open drain interrupt output from the TS3A227E to notify the host that an event has occurred. If I2C is not used this pin must be grounded. Connected to the RING2 pin of the 3.5 mm jack. If RING2 pin on plug in is MIC signal, this is connected to MICP. If not, this is connected to GND_SENSE and becomes the ground sensing feedback for the accessory Clock from I2C bus. This can be connected to VDD if I2C is not used. Connect to the TIP pin of the 3.5 mm jack. Power input to the TS3A227E. External de-coupling capacitors are required on this pin. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 3 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range referenced with respect to GND (unless otherwise noted) (1) Input Voltage MIN MAX UNIT VDD –0.3 5 V SDA, SCL, INT, MIC_PRESENT –0.3 VDD + 0.5 V TIP –3.3 VDD + 0.5 V DET_TRIGGER –2.2 VDD + 0.5 V –0.3 (2) V GND_SENSE, RING2, SLEEVE, RING2_SENSE, SLEEVE_SENSE, MICP, GNDA ON-state switch current 3.6 and VDD + 0.5 Combined continuous current through R2GNDFET and SLV GNDFET 500 Continuous current through R2DFET and SLV DFET 50 Continuous current through S1 20 Continuous current through S2 20 Continuous current through S3PR 50 Continuous current through S3PS 50 Continuous current through S3GR 100 Continuous current through S3GS 100 mA Operating ambient temperature range –40 85 °C Tstg –65 150 °C (1) (2) Storage temperature range Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. This rating is exclusive and the voltage on the pins must not exceed either 3.6 and VDD. E.g. if VDD = 4.5 V the voltage on the pin must not exceed 3.6 V and if VDD is = 2.5 V the voltage on the pin must not exceed 3.0 V. 7.2 ESD Ratings Human body model (HBM), ESD stress voltagenew note #1 to the ESD Ratings table and combined MIN MAX column to VALUE (1) (2) V(ESD) Electrostatic discharge Charged device model (CDM), ESD stress voltage (1) (3) Contact discharge model (IEC) ESD stress voltage on TIP, DET_TRIGGER, RING2_SENSE, SLEEVE_SENSE, RING2, SLEEVE (1) (1) (2) (3) 4 VALUE UNIT ±2000 V ±500 V ±8000 V Electrostatic Discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges into the device JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN VDD VI Power supply voltage range Digital input voltage range VIO Input/output voltage range 4.5 V 0 VDD V –2.2 VDD V 0 3.3 (1) and VDD –3 VDD 0 VDD V RING2_SENSE, SLEEVE_SENSE, RING2, SLEEVE, GND_SENSE, MICP TIP VO Output voltage range VIH Input logic high INT, MIC_PRESENT SDA, SCL Input logic low TA Operating ambient temperature (1) V 1.2 VDD V 0.65 × VDD VDD V SDA, SCL 0 0.4 V DET_TRIGGER 0 0.4 × VDD V –40 85 °C DET_TRIGGER VIL UNIT 2.5 SDA, SCL DET_TRIGGER MAX This rating is exclusive and the voltage on the pins must not exceed either 3.3 and VDD. E.g. if VDD = 4.5 V the voltage on the pin must not exceed 3.3 V and if VDD is = 2.5 V the voltage on the pin must not exceed 2.5 V. 7.4 Thermal Information THERMAL METRIC (1) TS3A227E TS3A227E RTE YFF 16 PINS 16 PINS RθJA Junction-to-ambient thermal resistance 45.9 77.9 RθJC(top) Junction-to-case (top) thermal resistance 52.6 0.6 RθJB Junction-to-board thermal resistance 21.2 12.5 ψJT Junction-to-top characterization parameter 0.9 2.3 ψJB Junction-to-board characterization parameter 21.2 12.5 RθJC(bot) Junction-to-case (bottom) thermal resistance 4.3 - (1) UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 5 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 7.5 Electrical Characteristics Unless otherwise noted the specification applies over the VDD and ambient operating temperature range. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 2.5 3.3 4.5 V 0.5 10 µA 7 15 µA Manual switch control = ’1’ , I C bus inactive, VDD = 2.5 V to 4.5 V Depletion FETs off 20 40 µA 3-pole accessory inserted. I2C bus inactive (1), FM Support = ’0’ VDD = 2.5 V to 4.5 V 11 20 µA 3-pole accessory inserted. I2C bus inactive, (1) FM Support = ’1’ VDD = 2.5 V to 4.5 V 25 45 µA 4-pole Accessory inserted. I2C bus inactive, (1) VDD = 2.5 V to 4.5 V 25 40 µA 4-pole Accessory inserted. KP detection enabled I2C bus inactive, (1) VDD = 2.5 V to 4.5 V 30 45 µA 1 8 µA RING2 GNDFET on resistance (DSBGA Package) 40 85 RING2 GNDFET on resistance (QFN Package) 60 95 40 85 60 95 VDD = 3.3 V, VSLEEVE_SENSE/RING2_SENSE = 0 V to 2.7 V, IMICP = ±10 mA 3 6.5 3 6.5 VDD = 3.3 V, VSLEEVE_SENSE/RING2_SENSE = 0 V to 2.7 V, IGND_SENSE = ±75 mA 0.5 1 0.5 1 SUPPLY VOLTAGE VDD Supply voltage No accessory inserted. I2C bus inactive (1) VDD = 2.5 V to 4.5 V Manual switch control = ’1’ , I2C bus inactive, (1) VDD = 2.5 V to 4.5 V, Depletion FETs on 2 IDD Quiescent current Quiescent current addition from using a 1.8 V I2C bus. (2) IDD_1.8 No accessory inserted. I2C bus inactive at 1.8 V, (3) VDD = 2.5 V to 4.5 V SWITCH RESISTANCE RR2GNDFT RSLVGNDFT VDD = 3.3 V, VGND = 0V, SLEEVE GNDFET on resistance (DSBGA IGNDA = 75 mA Package) SLEEVE GNDFET on resistance (QFN Package) mΩ RS3PS S3PS on resistance RS3PR S3PR on resistance RS3GS S3GS on resistance RS3GR S3GR on resistance RS1 Switch 1 on resistance 15 30 RS2 Switch 2 on resistance 15 30 RR2DFET RING2 depletion FET on resistance 75 150 RSLVDFET SLEEVE depletion FET on resistance 75 150 VDD = 3.3 V, IGND = 10 mA Ω Ω Ω Ω SWITCH LEAKAGE CURRENT IOFF RING2 pin off leakage 1 SLEEVE pin off leakage 1 RING2_SENSE pin off leakage SLEEVE_SENSE pin off leakage VIN = 0 V to 3.3 V, VDD = 3.3 V MICP pin off leakage (1) (2) (3) 6 S2PS, S3PR, S3GS, S3GR on leakage 1 µA 1 GND_SENSE pin off leakage ION 1 1 VSLEEVE/RING2 = 0V, VDD = 3.3 V 1 µA The I2C bus is inactive if both the SDA and SCL lines are tied to VDD. If the I2C bus is operating at 1.8 V the IDD_1.8 current number will be in addition to the other current consumption numbers specified. The I2C bus is inactive if both the SDA and SCL lines are tied to 1.8 V. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 Electrical Characteristics (continued) Unless otherwise noted the specification applies over the VDD and ambient operating temperature range. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SWITCH TIMING Turn off time for S3PS, S3PR, S3GS, S3GR tOFF tON VDD = 2.5 V, 3.3 V, 4.5 V, RL = 300 Ω, CL = 50 pF VSLEEVE_SENSE/RING2_SENSE = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) 5 µs VDD = 2.5 V, 3.3 V, 4.5 V Turn off time for S1, S2, RING2 GNDFET, RPU = 1500 Ω, CL = 50 pF SLEEVE GNDFET VPU = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) 5 µs Turn off time for RING2 DFET and SLEEVE DFET VDD = 2.5 V, 3.3 V, 4.5 V RPU = 1500 Ω, CL = 50 pF VPU = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) 500 µs Turn on time for S3PS, S3PR, S3GS, S3GR VDD = 2.5 V, 3.3 V, 4.5 V RL = 300 Ω, CL = 50 pF VSLEEVE_SENSE/RING2_SENSE = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) 1 µs VDD = 2.5 V, 3.3 V, 4.5 V Turn on time for S1, S2, RING2 GNDFET, RPU = 1500 Ω, CL = 50 pF SLEEVE GNDFET VPU = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) 35 µs VDD = 2.5 V, 3.3 V, 4.5 V RPU = 1500 Ω, CL = 50 pF VPU = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) 1 µs Turn on time for RING2 DFET and SLEEVE DFET DIGITAL I/O MIC_PRESENT low level output voltage VOL INT low level output voltage SDA low level output voltage VDD = 3.3 V, IOL = 10 mA VDD = 3.3 V, IOLMAX = 3 mA SDA, SCL VIH Input logic high VIL Input logic low RPU/DT Internal DET_TRIGGER pull-up resistance DET_TRIGGER 0 0.4 0 0.4 0 0.4 1.2 VDD VDD x 0.65 VDD SDA, SCL 0 0.4 DET_TRIGGER 0 VDD x 0.4 VDD = 3.3 V, I/DET_TRIGGER = 1 µA 0.5 1 1.85 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E V V MΩ 7 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com Electrical Characteristics (continued) Unless otherwise noted the specification applies over the VDD and ambient operating temperature range. PARAMETER TEST CONDITIONS MIN TYP VDD = 3.3 V ± 200 mVPP, f = 217 Hz, RL at RING2= 50 Ω –95 –120 VDD = 3.3 V ± 200 mVPP, f = 1 kHz, RL at RING2= 50 Ω –85 –110 VDD = 3.3 V ± 200 mVPP, f = 20 kHz, RL at RING2= 50 Ω –70 –90 MAX UNIT DYNAMIC CHARACTERISTICS PSR217 PSR1k Power supply rejection PSR20k dB ISOS3 SLEEVE_SENSE or RING2_SENSE to MICP Isolation VIN = 200 mVPP, f = 20 Hz – 20 kHz, RL = 50 Ω –90 dB SEPS3 SLEEVE_SENSE to RING2_SENSE Separation VIN = 200 mVPP, f = 20 Hz – 20 kHz, RL = 50 Ω –75 dB BW Bandwidth through GNDFETs VIN = 60 mVPP, IBIAS = 10 mA 150 MHz THD200 MICP to RING2_SENSE or SLEEVE_SENSE total harmonic distortion THD500 120 VIN = 1.5 V + 200 mVPP, f = 20 Hz – 20 kHz, RS = 600 Ω, RL = 600 Ω 0.003 % VIN = 1.5 V + 500 mVPP, f = 20 Hz – 20 kHz, RS = 600 Ω, RL = 600 Ω 0.002% SNR MICP to RING2_SENSE or SLEEVE_SENSE signal to noise ratio VIN = 1 VRMS, f = 20 Hz – 20 kHz, RS = 600 Ω, RL = 600 Ω tDET Detection sequence duration Time between DET_TRIGGER transition from high to low and INT transition from high to low. Default 90 ms insertion debounce. 175 210 ms Tpower-up Power up time Power-up time Time from VDD > 2.5 V till I2C communication is ready 20 25 ms tREMOVAL Removal wait period Time between DET_TRIGGER transition from low to high and RING2/SLEEVE DFETs turning on 50 65 ms –90 –110 dB 7.6 I2C Interface Timing Characteristics Unless otherwise noted the specification applies over the VDD and ambient operating temperature range STANDARD MODE I2C BUS PARAMETER fscl I2C clock frequency 2 FAST MODE I2C BUS MIN MAX MIN MAX 0 100 0 400 UNIT kHz tsch I C clock high time 4 0.6 tscl I2C clock low time 4.7 1.3 tsp I2C spike time tsds I2C serial data setup time tsdh I2C serial data hold time ticr I2C input rise time 1000 21 300 ns ticf I2C input fall time 300 21 300 ns tocf I2C output fall time; 10 pF to 400 pF bus 300 20 + 0.1 Cb 300 µs tbuf I2C bus free time between Stop and Start 4.7 1.3 µs tsts I2C Start or repeater Start condition setup time 4.7 0.6 µs tsth I2C Start or repeater Start condition hold time 4 0.6 µs tsps I2C Stop condition setup time 4 0.6 tvd(data) Valid data time; SCL low to SDA output valid 3.45 0.3 0.9 µs tvd(ack) Valid data time of ACK condition; ACK signal from SCL low to SDA (out) low 3.45 0.3 0.9 µs Cb I2C bus capacitive loading 400 0 400 pF 8 50 250 Submit Documentation Feedback µs 50 100 0 0 µs ns ns 0 ns µs Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 7.7 Timing Diagrams Insertion de-bounce time (90 ms default ) Removal wait time Accessory detection time DET _TRIGGER INT MIC_PRESENT High (A) (B) (C) (D) (E) (F) A. (This is the point that DET_TRIGGER has stopped glitching and is fully low. The de-bounce time of 90 ms starts from the point that the pin is constantly below the VIL level. Any time the DET_TRIGGER pin cross the VIH level the debounce timer will restart. B. Point B is the end of the insertion de-bounce time and the beginning of accessory detection. C. Detection has completed at this point. The switches will be routed before the INT pin is pulled low. D. INT is cleared after the host reads the interrupt register. E. The headset is removed here. The switch states will change immediately and INT will be pulled low. F. After a 50 ms removal de-bounce timer the TS3A227E will go back into sleep mode if manual switch control is not enabled Figure 1. 3-Pole Accessory Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 9 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com Timing Diagrams (continued) Insertion de-bounce time (90 ms default ) Removal wait time Accessory detection time DET _TRIGGER INT MIC_PRESENT High (A) (B) (C) (D) (E) (F) A. This is the point that DET_TRIGGER has stopped glitching and is fully low. The de-bounce time of 90 ms starts from the point that the pin is constantly below the VIL level. Any time the DET_TRIGGER pin cross the VIH level the debounce timer will restart. B. Point B is the end of the insertion de-bounce time and the beginning of accessory detection. C. Detection has completed at this point. The switches will be routed before the INT and MIC_PRESENT pins are pulled low. D. INT is cleared after the host reads the interrupt register. E. The headset is removed here. The switch states will change immediately and INT will be pulled low. The MIC_PRESENT pin will be released. F. After a 50 ms removal de-bounce timer the TS3A227E will go back into sleep mode if manual switch control is not enabled Figure 2. 4-Pole Accessory 10 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 Timing Diagrams (continued) 7.7.1 Removal A removal event will interrupt any on-going process in the TS3A227E. The following diagram depicts how the device “jumps” during a removal. If the removal event occurs during the insertion de-bounce period the TS3A227E will jump to the (A) point of the diagram depicted by the green arrow and line. Any time after point (B) has been reached and the accessory is removed the device jumps to point (E), which includes key press detection. Under Manual Switch Control the switch states will not change. Insertion de-bounce time (90 ms default ) Removal wait time Accessory detection time DET _TRIGGER INT MIC_PRESENT High (A) (B) (C) (D) (E) ( F) Figure 3. Removal Timing During Insertion Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 11 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 7.8 Typical Characteristics 0.0035 200 mVpp 500 mVpp 0.003 THD (%) 0.0025 0.002 0.0015 0.001 0.0005 0 10 2030 50 100 200 500 1000 Frequency (Hz) 10000 100000 D001 Figure 4. S3PX THD 8 Parameter Measurement Information Channel ON R ON = V SLEEVE/RING2 / I GNDA VSLEEVE/RING2 IGNDA R2/SLV GNDFET Figure 5. RING2/SLEEVE GNDFET On Resistance Measurement Channel ON R ON = V SLEEVE/RING2 / I GND VSLEEVE/RING2 R2/SLV DFET IGND Figure 6. RING2/SLEEVE DFET On Resistance Measurement 12 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 Parameter Measurement Information (continued) Channel ON R ON = VMICP/GND_SENSE / I GND VMICP/GND_SENSE I GND S1/S2 Figure 7. S1/S2 On Resistance Measurement Channel ON R ON = VMICP/GND_SENSE / I RING2_SENSE /SLEEVE_ SENSE VMICP/GND_SENSE S3PS/R S3GS/R IRING 2_SENSE /SLEEVE_ SENSE Figure 8. S3PS, S3PR, S3GS, S3GR On Resistance Measurement Channel OFF VIN V OUT Switch Figure 9. Switch Off Leakage Current Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 13 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com Parameter Measurement Information (continued) Channel ON V OUT I Leakage Switch Figure 10. Switch On Leakage Current Channel ON 3.3 V ± 200 mV PP VDD Source Signal Reference Test Switch 50 Ω Source Generator Figure 11. Power Supply Rejection Ratio (PSRR) Channel Off Network Analyzer VMICP/GND_ SENSE VSLEEVE _SENSE/RING2 _SENSE 50 Ω Source Signal 50 Ω 50 Ω Switch Figure 12. Switch Off Isolation 14 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 Parameter Measurement Information (continued) Network Analyzer 50 Ω Source Signal V MICP VSLEEVE_ SENSE VGND _SENSE VRING2_ SENSE Switches 50 Ω 50 Ω 50 Ω Figure 13. Channel Separation Audio Analyzer 600 Ω V MICP VSLEEVE_ SENSE/RING2_ SENSE Source Signal Switch 600 Ω Figure 14. Total Harmonic Distortion (THD) and SNR Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 15 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com Parameter Measurement Information (continued) V MICP/GND _SENSE VTEST RL SDA CL Digital Core SCL SCL VTEST VTEST tON 90 % tOFF 10 % Figure 15. S3 tOFF/tON VPU R PU VTEST CL SDA Digital Core SCL SCL VTEST VTEST tOFF 70 % tON 30 % Figure 16. S1, S2, GNDFET and DFET tON/tOFF 16 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 9 Detailed Description 9.1 Overview The TS3A227E is an autonomous audio accessory switch with adjustable de-bounce settings, ultra-low RON ground FETs, depletion FETs and manual I2C control. The detection sequence is initiated via the external DET_TRIGGER pin or via I2C command. The device incorporates internal de-bounce timings that remove the need for external RC circuits, reducing cost and overall PCB footprint. Additionally all switches of the TS3A227E and the internal de-bounce timings can be controlled through I2C. Before an insertion, TS3A227E isolates the MICBIAS voltage output from the audio jack to remove click/pop noise that can be created during an insertion event. In addition the device also includes depletion FETs to ground the accessory SLEEVE and RING2 pins when VDD is not powered. This removes the humming noise that can be created when plugging an accessory into and unpowered system. The TS3A227E detects the presence and configuration of the microphone in an attached headset upon insertion. Upon detection of a microphone the TS3A227E automatically connects a system analog microphone pin (MICP) to the appropriate audio jack connection. The device also automatically routes the device GNDA pin to the headset ground. After a 4-pole headset insertion the host can enable the Key Press detection feature of the TS3A227E. The device also features an ultra-low power sleep mode to conserve battery life when an accessory is not inserted. For FM transmission the ground FETs of the device can be used as an FM transmission path by placing the FM receiver and matching network on the GNDA pin. The FM support bit must be set to ‘1’ through I2C for FM transmission to pass. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 17 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 9.2 Functional Block Diagram BATTERY AUDIO AMPLIFIER VDD TS3A227 E MIC_PRESENT SCL Digital interface control DIGITAL BASEBAND SDA TIP Detection Circuitry EMI FILTER DET_TRIGGER INTB RING2_SENSE ESD Protection MICP MICROPHONE AMPLIFIER Mic Switch Matrix GND _SENSE SLEEVE _SENSE EMI FILTER RING2 SLEEVE S1 and S2 GND Switch Matrix Depletion FETs GND GNDA FM Receiver 18 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 9.3 Feature Description 9.3.1 Accessory Configuration Detection There are currently two difference configurations for headsets with microphones as shown in Table 1. Many codecs requires that the system designer make a tough decision via a hardware connection which headset they would like to support. This is done by directly connecting the microphone bias and the ground connections to the sleeve and ring2 pins of the audio jack. For the end user this leaves a headset standard as fully unsupported. Table 1. Two Difference Configurations for Headsets PHYSICAL CONNECTOR Tip Ring INTERNAL IMPEDANCE NETWORK Sleeve Tip L R G Ring TRS 16-2 kΩ 600-4kΩ L Ring1 Ring2 Sleeve Audio Left Audio Right Ground 16-2 kΩ 3-pole TRS Tip PIN NAME CONFIGURATION R G Tip Audio Right Ring2 Ground Sleeve Microphone M Sleeve 16-2 kΩ Audio Left Ring1 Standard 16-2 kΩ 600-4kΩ Tip 4-pole TRRS L R M 16-2 kΩ Audio Left Ring1 Audio Right Ring2 Microphone Sleeve Ground G OMTP 16-2 kΩ The TS3A227E fills this system gap by detecting the presence and location of the microphone and automatically routing the MICBIAS and ground lines to support each headset. This enhances the overall user experience by allowing headsets from all manufacturers. 9.3.2 Optional Manual I2C Control The TS3227E also features optional manual I2C control for enhanced system flexibility. This allows the system designer to manually control the switches and de-bounce settings at their discretion enabling the TS3A227E to adapt to unique use cases. This is an optional feature that does not need to be used for the device to operate autonomously. 9.3.3 Adjustable De-bounce Timings The TS3A227E features manual control of the insertion de-bounce timer with selectable values. The default insertion de-bounce timer is 90 ms. This eliminates the need for external RC components which reduces BOM cost, the PCB footprint of the external RC components. Further information on how to select an appropriate de-bounce timer can be found in the application and implementation section. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 19 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 9.3.4 Key Press Detection After a headset is inserted, the host can enable Key Press detection through the I2C registers. This will configure the TS3A227E to detect up to 4 different keys and report when the key is pressed and released. 9.3.5 Click Pop Noise Reduction During an accessory insertion and removal event the TS3A227E use special techniques to remove the click/pop noise that can occur with a traditional implementation creating a better user experience. 9.3.6 Power off Noise Removal In a system that intends to support both headset types, the end user can place the system into sleep mode and leave a headset/speaker plugged into the audio jack. If the audio jack switch is turned off to conserve power in the sleep mode this would typically mean the headset/speaker ground would not be connected because there is no power to turn on the ground FETs. This creates an audible humming noise at the speaker/headset output that can be discomforting to listen to. By utilizing always on depletion FETs this issue can be removed and the headset/speaker can be connected to ground even with the device unpowered. 9.3.7 Sleep Mode The TS3A227E will automatically enter a low power sleep when no accessory is inserted and manual switch control is not enabled. After an accessory is inserted the device will wake, run detection, and configure the switches as necessary. 9.3.8 Codec Sense Line In the complex systems of today, there is an increasing amount of ICs on any given board. The issue this creates is that a codec can be far away from the audio jack and there is a potential difference between the grounding of the codec and the grounding of the headset. By incorporating a ground sense line into the TS3A227E the codec can compensate for this offset and create a higher quality audio experience. 9.3.9 FM Support FM can be picked up using the headset ground line and passed through the ground FETs of the TS3A227E. By having a bandwidth of 200 MHz the full FM band can be passed through these FETs to a FM matching network and the FM receiver. 9.4 Device Functional Modes 9.4.1 Sleep Mode The device will realize a sleep mode of 1 µA if the following are true: • No accessory is inserted • Manual Switch Control = ‘0’ The TS3A227E will respond to I2C communication and insertion events while in sleep mode. The user can set the de-bounce settings and device configuration as desired while in the sleep mode. If the user sets the Manual Switch Control bit to ‘1’ the device will turn on all blocks and come out of sleep mode. If there is no accessory inserted and the users exits manual switch control, the switches will revert to the noinsertion state and all unnecessary blocks of the TS3A227E will turn off and enter the sleep mode. 20 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 Device Functional Modes (continued) 9.4.2 Manual Switch Control The TS3A227E supports manual switch control that can be utilized by setting Bit6 of the Device Settings 1 register to ‘1’. Key operational characteristics of manual switch control are below. 1. Enabling the manual switch control does not disable automatic insertion and accessory type detection. 2. Manual Switch Control is blocked during accessory type detection which includes an automatic detection sequence or a manual SW triggered detection sequence. Any changes to the switch control registers, or setting the device to manual switch control will not update the switches until after the accessory type detection has completed. 3. Manual Switch Control is also blocked during de-bounce periods. 4. Excluding items 2 and 3 above, immediately after the system enables manual switch control the switch states will change to reflect the switch control registers. It is advised to set the desired state of the switches before enabling manual switch control. 5. Turning off the depletion FETs of the device will result in increased power consumption as defined in the electrical characteristics table. 6. Immediately upon setting Manual Switch Control = ‘0’ the device will automatically configure the switches to the latest detection state. If an accessory is inserted but the TS3A227E has not run detection due to Auto_Det_EN = ‘0’, the switch status will revert to the no insertion state. 7. The device cannot be in sleep mode and utilize manual switch control at the same time. 9.4.3 Manual Switch Control Use Cases The table below captures what occurs after a 3-pole insertion with the Manual Switch Control, Auto DET Enable, and DET Trigger bits set to the following before an insertion. MANUAL SWITCH CONTROL AUTO DET EN DET TRIGGER (SW) DOES TYPE DETECTION RUN 0 0 0 no No-insertion 0 0 0 1 yes 3-pole config 0 0 1 0 yes 3-pole config 0 0 1 1 yes 3-pole config 0 1 0 0 no Switch control registers 0 1 0 1 yes Switch control registers 0 1 1 0 yes Switch control registers 0 1 1 1 yes Switch control registers 0 SWITCH STATUS AFTER INSERTION DET TRIGGER (SW) AFTER INSERTION The table below captures the switch and relevant register outputs for sequence 1. EVENT NO. EVENT DESCRIPTION SWITCH STATUS 3-POLE BIT 4-POLE STANDARD BIT 4-POLE OMTP BIT 1 Device powers up No-insertion 0 0 0 2 User sets Auto DET Enable = ‘0’ No-insertion 0 0 0 3 3-pole accessory is inserted No-insertion 0 0 0 4 System sets Manual Switch Control = ‘1’ System controlled 0 0 0 5 System sets switch control registers = 0xFF System controlled 0 0 0 6 System sets Manual Switch Control = ‘0’ No-insertion 0 0 0 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 21 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com In sequence 1 at event 3 the switch status does not change because the system set the Auto DET Enable = ‘0’. When the accessory is inserted we will not run detection and not change the switches because of this. At event 6 the system turns off manual switch control, the switch state reverts back to the No-insertion state because the TS3A227E has not ran detection. The table below captures the switch and relevant register outputs for sequence 2. EVENT NO. SWITCH STATUS AFTER EVENT EVENT DESCRIPTION 3-POLE BIT 4-POLE STANDARD BIT 4-POLE OMTP BIT 1 Device powers up No-insertion 0 0 0 2 User sets Auto DET Enable = ‘0’ No-insertion 0 0 0 3 3-pole accessory is inserted No-insertion 0 0 0 4 System sets Manual Switch Control = ‘1’ System controlled 0 0 0 5 System sets switch control registers = 0xFF System controlled 0 0 0 6 System sets DET Trigger = ‘1’ System controlled 1 0 0 7 System sets Manual Switch Control = '0' 3-pole configuration 1 0 0 In sequence 2 at event 3 the switch status does not change because the system set the Auto DET Enable = ‘0’. When the accessory is inserted we will not run detection and not change the switches because of this. At event 6 the system turns triggers a manual type detection and the TS3A227E detects a 3-pole accessory. The switch state will remain in the system controlled state. At event 7 the system exits manual switch control. The switch status will then change back to the last detection state. Because detection was ran at event 6 and a 3-pole was detected, the switch state will reflect that of the 3pole switch configuration. 22 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 9.4.4 FM Support Mode FM support mode needs to be entered via I2C through the Device Settings register. This will turn off the depletion switches when an accessory is inserted, eliminating the extra ground path. The ground line of the headset/headphone is used for FM transmission. This signal must pass through the TS3A227E ground FETs as shown in Figure 17 where the red line indicates the transmission path. TS3 A227E S3 PR RING 2_SENSE MICP S 3PS Audio Jack S3GS SLEEVE _SENSE GND_SENSE L R G M S3GR RING2 SLEEVE S1 S2 RING2 GNDFET GND SLEEVE GNDFET RING2 DFET GNDA SLEEVE DFET GND FM Receiver Figure 17. FM Support Transmission Path NOTE FM support should be enabled before an accessory is inserted. Toggling the FM support bit after a headset is inserted can cause a pop noise to be heard by the end user. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 23 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 9.5 Register Maps The I2C address of the TS3A227E is b’0111011X or 77h read and 76h write. Addr (xxh) Name Type Reset Bit7 Bit6 Bit5 Bit4 Bit3 00h Device ID R 11h 0 0 0 1 0 01h Interrupt 02h Key Press Interrupts R 00h R 00h 03h Interrupt Disable R/W 08h 04h Device Settings R/W 23h 05h Device Setting 1 R/W 00h Key 4 Press Reset Manual Switch Control R/W 0Eh Reserved 07h Switch Control 1 R/W 00h Reserved 08h Switch Control 2 R/W 00h Switch Status 1 R 0Ch Switch Status 2 R 00h 0Bh Accessory Status 0Ch 0Dh Auto DET Enable DET Trigger 0 1 DC Ins/Rem Event Key 2 Release Key 2 Press Key 1 Release Key 1 Press INT Disable ADC Conversion INT Disable DC INT Disable Ins/Rem Event INT Disable FM Support Insertion De-bounce Time Key Press Enable Key Release De-bounce MICBIAS Setting Raw Data En ADC Trigger Key Press De-bounce RING2 GNDFET SLEEVE DFET RING2 DFET Switch 2 Switch 1 S3PS S3PR S3GS S3GR RING2 GNDFET SLEEVE DFET RING2 DFET Switch 2 Switch 1 Reserved S3PS S3PR S3GS S3GR Reserved Insertion Status 4-Pole Standard 4-pole OMTP 3-pole SLEEVE GNDFET Reserved Reserved Bit0 0 Reserved Device Setting 2 09h Key 3 Press Reserved 06h 0Ah Key 3 Release Bit1 ADC Conversion Reserved Key 4 Release Bit2 SLEEVE GNDFET R 00h ADC Output R 00h ADC Threshold 1 R/W 20h KP Threshold 1 0Eh Threshold 2 R/W 40h KP Threshold 2 0Fh Threshold 3 R/W 68h KP Threshold 3 Interrupt and Key Press Interrupt register notes: • The device will continue to automatically run type detection and key press detection even if the host has not serviced the interrupts. • Consecutive reads of an interrupt register at 400 kHz will not allow time for the internal registers to clear and will appear. The internal digital core requires 200 µs to clear the register after it has been read. 9.6 Register Field Descriptions 9.6.1 Device ID Register Field Descriptions (Address 00h) Figure 18. Device ID Register Field Descriptions (Address 00h) Bit 7-0 24 Field Device ID Type R Reset 11h Description Unique Revision number Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 9.6.2 Interrupt Register Field Descriptions (Address 01h) Table 2. Interrupt Register Field Descriptions (Address 01h) Bit Field Type Reset 7-3 Reserved R 0h ADC Conversion R 0h 2 Description ADC Conversion complete Interrupt. Flagged after a manual ADC conversion is complete. Interrupt bit is cleared after being read through I2C or after a removal event. 0h = Default state 1h = ADC Conversion Complete 1 DC R 0h Detection Complete interrupt. Flagged after detection is completed for an insertion sequence. This bit is also flagged after completion of a manually triggered detection. Interrupt bit is cleared after being read through I2C or after a removal event. 0h = Default state 1h = Detection Completed 0 Ins/Rem Event R 0h Insertion or removal interrupt indicator. This bit is set if there is an insertion or removal event. The Insertion status bit of the Accessory Status register (0Bh) must be checked if this bit is set. Interrupt bit is cleared after being read through I2C 0h = Default state 1h = Accessory has been inserted or removed 9.6.3 Key Press Interrupt Register Field Descriptions (Address 02h) Table 3. Key Press Interrupt Register Field Descriptions (Address 02h) Bit 7 Field Type Reset Description Key 4 Release R 0h This interrupt bit is set after the user has released key 4 on the accessory for a duration longer than the Key Release De-bounce timer. This bit will auto-clear on the following conditions: ● Host reads the register through I2C ● The KP Enable bit is set to ‘0’ — The KP Enable bit is set to ‘0’ automatically after a removal ● The Key 4 press bit is set ot '1' 0h = Default State 1h = Key 4 was released 6 Key 4 Press R 0h This interrupt bit is set after the user has pressed key 4 on the accessory for a duration longer than the Key Press De-bounce timer. This bit will auto-clear on the following conditions: ● Host reads the register through I2C ● The KP Enable bit is set to ‘0’ — The KP Enable bit is set to ‘0’ automatically after a removal 0h = Default State 1h = Key 4 was released 5 Key 3 Release R 0h This interrupt bit is set after the user has pressed Key 3 on the accessory for a duration longer than the Key Release De-bounce timer. This bit will auto-clear on the following conditions: ● Host reads the register through I2C ● The KP Enable bit is set to ‘0’ — The KP Enable bit is set to ‘0’ automatically after a removal ● The Key 3 Press bit is set to ‘1’ 0h = Default State 1h = Key 3 was released Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 25 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com Table 3. Key Press Interrupt Register Field Descriptions (Address 02h) (continued) Bit 4 Field Type Reset Description Key 3 Press R 0h This interrupt bit is set after the user has pressed Key 3 on the accessory for a duration longer than the Key Press De-bounce timer. This bit will auto-clear on the following conditions: ● Host reads the register through I2C ● The KP Enable bit is set to ‘0’ — The KP Enable bit is set to ‘0’ automatically after a removal 0h = Default State 1h = Key 3 was released 3 Key 2 Release R 0h This interrupt bit is set after the user has pressed Key 2 on the accessory for a duration longer than the Key Release De-bounce timer. This bit will auto-clear on the following conditions: ● Host reads the register through I2C ● The KP Enable bit is set to ‘0’ — The KP Enable bit is set to ‘0’ automatically after a removal ● The Key 2 Press bit is set to ‘1’ 0h = Default State 1h = Key 2 was released 2 Key 2 Press R 0h This interrupt bit is set after the user has pressed Key 2 on the accessory for a duration longer than the Key Press De-bounce timer. This bit will auto-clear on the following conditions: ● Host reads the register through I2C ● The KP Enable bit is set to ‘0’ — The KP Enable bit is set to ‘0’ automatically after a removal 0h = Default State 1h = Key 2 was released 1 Key 1 Release R 0h This interrupt bit is set after the user has pressed Key 1 on the accessory for a duration longer than the Key Release De-bounce timer. This bit is used for raw data release events. This bit will auto-clear on the following conditions: ● Host reads the register through I2C ● The KP Enable bit is set to ‘0’ — The KP Enable bit is set to ‘0’ automatically after a removal ● The Key 1 Press bit is set to ‘1’ 0h = Default State 1h = Key 1 was released 0 Key 1 Press R 0h This interrupt bit is set after the user has pressed Key 1 on the accessory for a duration longer than the Key Press De-bounce timer. This bit is used for raw data press events. This bit will auto-clear on the following conditions: ● Host reads the register through I2C ● The KP Enable bit is set to ‘0’ — The KP Enable bit is set to ‘0’ automatically after a removal 0h = Default State 1h = Key 1 was released 26 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 9.6.4 Interrupt Disable Register Field Descriptions (Address 03h) Table 4. Interrupt Disable Register Field Descriptions (Address 03h) Bit Field Type Reset Description 7-3 Reserved R 0h +3 INT Disable R/W 1h Enables or disables all interrupts. Disabling the interrupts will cause the INT to not assert but the bits will still populate. 0h = interrupts are enabled 1h = interrupts are disabled 2 ADC Conversion INT Disable R/W 0h Enables or disables the ADC conversion interrupt. Disabling the interrupt will cause INT to not assert but the interrupt bit will still be set . In the use case that this bit is == ‘1’ and a key is pressed, the Key Press interrupt will still assert the INT pin. If the host issues a software ADC trigger after the key has been pressed, the interrupt will not assert as that ADC conversion is the only interrupt present. 0h = ADC Conversion interrupt is enabled 1h = ADC Conversion interrupt is disabled 1 DC INT Disable R/W 0h Enables or disables the DC interrupt. Disabling the interrupt will cause INT to not assert but the interrupt bit will still be set. 0h = DC interrupt is enabled 1h = DC interrupt is disabled 0 Ins/Rem Event INT R/W Disable 0h Enables or disables the Ins/Rem Event interrupt. Disabling the interrupt will cause INT to not assert but the interrupt bit will still be set. 0h = Ins/Rem Event interrupt is enabled 1h = Ins/Rem Event interrupt is disabled 9.6.5 Device Settings Field Descriptions (Address 04h) Table 5. Device Settings Field Descriptions (Address 04h) Bit Field Type Reset Description 7 Reset R/W 0h Initiates software reset of the TS3A227E. This will interrupt any on-going operation internal to the device. 0h = Default state 1h = Initiates a reset 6 Manual Switch Control R/W 0h Enables Manual control of the TS3A227E switches. After enabling manual switch control the switch status will immediately reflect the values in the switch control registers provided accessory type. 0h = Manual switch control disabled 1h = Manual switch control enabled 5 Auto DET Enable R/W 1h Controls whether detection is automatically ran after an insertion. 0h = Auto accessory detection is disabled 1h = Auto accessory detection is enabled 4 DET Trigger R/W 0h Manually triggers detection. This bit is auto cleared after detection is completed. A DET Trigger request will be ignored in the following cases: ● A detection event is currently being service. ● The interrupt register is not cleared (Register 02h must be = 00h) ● There is no accessory inserted (/DET_TRIGGER is high) 0h = Default value 1h = Manually trigger detection 3 FM Support R/W 0h Turns on FM support. This will turn off the depletion FETs if any accessory is inserted allowing FM transmission through the ground FETs at the cost of increased current consumption. 0h = FM not supported and depletion FETs are on after an insertion 1h = FM supported and depletion FETs are off after an insertion Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 27 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com Table 5. Device Settings Field Descriptions (Address 04h) (continued) Bit Field Type Reset Description 2.0 Insertion De-bounce Time R/W 3h Controls the insertion de-bounce timer. Values below are typical values that have ±30% variation. Values in addition have a ±1 ms variation though this will only really affect the 2 ms timer. 0h = 2 ms 1h = 30 ms 2h = 60 ms 3h = 90 ms 4h = 120 ms 5h = 150 ms 6h = 1 s 7h = 2 s 9.6.6 Key Press Settings 1 Field Descriptions (Address 05h) Table 6. Device Settings 1 Field Descriptions (Address 05h) Bit Field Type Reset 7-3 Reserved R 0h Key Press Enable R/W 0h 2 Description Enables the Key Press detection of the TSA227E. This bit auto clears after a removal event. If the Key Press Enable bit is set ‘1’ and the Manual Switch Control bit is set to ‘1’, the S3 matrix must be in one of the two correct position as described in the Key Press Detection section for the TS3A227E to run key press detection. 0h = Default state 1h = Enables Key Press detection 1 Raw Data En R/W 0h Enables the Raw data mode for Key Press Detection. This bit auto clears if the Key Press Enable bit is set to ‘0’. Enabling raw data mode will not clear the KP interrupt register. After enabling Raw Data any key press and release event is recorded using the Key 1 Press and Key 2 Press Release event. The ADC conversion will be recorded in the ADC output register. 0h = Raw Data is not enabled 1h = Raw Data is enabled 0 ADC Trigger R/W 0h Causes a manual ADC trigger if the Key Press Enable and Raw Data EN bits are both set to ‘1’. After the ADC conversion is complete the ADC Conversion interrupt will be set and the ADC Output register will be populated. This bit auto clears after the ADC Conversion is complete. A new ADC Conversion can be initiated even if the ADC Conversion interrupt has not been serviced. 0h = Default State 1h = Triggers ADC conversion 28 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 9.6.7 Key Press Settings 2 Field Descriptions (Address 06h) Table 7. Device Settings 2 Field Descriptions (Address 06h) Bit Field Type Reset 7-6 Reserved R 0h 5-3 MICBIAS Setting R/W 1h Description This controls the key press threshold. Set this setting closest to the intended MICBIAS voltage 0h 1h 2h 3h 4h 5h 6h 7h 2 Key Release Debounce R/W 1h = 2.1 V = 2.2 V (Default) = 2.3 V = 2.4 V = 2.5 V = 2.6 V = 2.7 V = 2.8 V Controls the Key-Release de-bounce timer. Values below are typical values that have ±30% variation. Values in addition have a ±1 ms variation though this will only really affect the 2 ms timer. 0h = 2 ms 1h = 20 ms (Default) 1-0 Key Press Debounce R/W 2h Controls the key press de-bounce timer. Values below are typical values that have ±30% variation. Values in addition have a ±1 ms variation though this will only really affect the 2 ms timer. 0h 1h 2h 3h = 2 ms = 40 ms = 80 ms (Default) = 120 ms Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 29 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 9.6.8 Switch Control 1 Field Descriptions (Address 07h) Table 8. Switch Control 1 Field Descriptions (Address 07h) Bit Field Type Reset 7-6 Description Reserved R 0h 5 SLEEVE GNDFET R/W 0h Configures the state of the SLEEVE GNDFET if manual switch control is enabled. If manual switch control is not enabled this bit is ignored. 0h = SLEEVE GNDFET switch off 1h = SLEEVE GNDFET switch on 4 RING2 DFET R/W 0h Configures the state of the RING2 GNDFET if manual switch control is enabled. If manual switch control is not enabled this bit is ignored. 0h = RING2 GNDFET switch off 1h = RING2 GNDFET switch on 3 SLEEVE DFET R/W 0h Configures the state of the SLEEVE DFET if manual switch control is enabled. If manual switch control is not enabled this bit is ignored. 0h = SLEEVE DFET switch off 1h = SLEEVE DFET switch on 2 RING2 DFET R/W 0h Configures the state of the RING2 DFET if manual switch control is enabled. If manual switch control is not enabled this bit is ignored. 0h = RING2 DFET switch off 1h = RING2 DFET switch on 1 Switch 2 R/W 0h Configures the state of the Switch 2 if manual switch control is enabled. If manual switch control is not enabled this bit is ignored. 0h = Switch 2 off 1h = Switch 2 on 0 Switch 1 R/W 0h Configures the state of the Switch 1 if manual switch control is enabled. If manual switch control is not enabled this bit is ignored. 0h = Switch 1 off 1h = Switch 1 on 9.6.9 Switch Control 2 Field Descriptions (Address 08h) Table 9. Switch Control 2 Field Descriptions (Address 08h) 30 Bit Field Type Reset 7-4 Reserved R 0h Description 3 S3PS R/W 0h Configures the state of the S3PS if manual switch control is enabled. If manual switch control is not enabled this bit is ignored. 0h = S3PS switch off 1h = S3PS switch on 2 S3PR R/W 0h Configures the state of the S3PR if manual switch control is enabled. If manual switch control is not enabled this bit is ignored. 0h = S3PR switch off 1h = S3PR switch on 1 S3GS R/W 0h Configures the state of the S3GS if manual switch control is enabled. If manual switch control is not enabled this bit is ignored. 0h = S3GS off 1h = S3GS on 0 S3GR R/W 0h Configures the state of the S3GR if manual switch control is enabled. If manual switch control is not enabled this bit is ignored. 0h = S3GR off 1h = S3GR on Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 9.6.10 Switch Status 1 Field Descriptions (Address 09h) Table 10. Switch Status 1 Field Descriptions (Address 09h) Bit Field Type Reset 7-6 Description Reserved R 0h 5 SLEEVE GNDFET R 0h Indicates the status of SLEEVE GNDFET 0h = SLEEVE GNDFET switch is off 1h = SLEEVE GNDFET switch is on 4 RING2 GNDFET R 0h Indicates the status of RING2 GNDFET 0h = RING2 GNDFET switch is off 1h = RING2 GNDFET switch is on 3 SLEEVE DFET R 1h Indicates the status of SLEEVE DFET 0h = SLEEVE DFET switch is off 1h = SLEEVE DFET switch is on 2 RING2 DFET R 1h Indicates the status of RING2 DFET 0h = RING2 DFET switch is off 1h = RING2 DFET switch is on 1 Switch 2 R 0h Indicates the status of Switch 2 0h = Switch 2 is off 1h = Switch 2 is on 0 Switch 1 R 0h Indicates the status of Switch 1 0h = Switch 1 is off 1h = Switch 1 is on 9.6.11 Switch Status 2 Field Descriptions (Address 0Ah) Table 11. Switch Status 2 Field Descriptions (Address 0Ah) Bit Field Type Reset 7-4 Reserved R 0h Description 3 S3PS R 0h Indicates the status of S3PS 0h = S3PS switch is off 1h = S3PS switch is on 2 S3PR R 0h Indicates the status of S3PR 0h = S3PR switch is off 1h = S3PR switch is on 1 S3GS R 0h Indicates the status of S3GS 0h = S3GS is off 1h = S3GS is on 0 S3GR R 0h Indicates the status of S3GR 0h = S3GR is off 1h = S3GR is on Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 31 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 9.6.12 Detection Results Field Descriptions (Address 0Bh) Table 12. Detection Results Field Descriptions (Address 0Bh) Bit Field Type Reset 7-4 Description Reserved R 0h 3 Insertion Status R 0h Indicates if an accessory is inserted the jack or not. This bit is set to the corresponding state after an accessory is inserted or removed and should be read after the Ins/Rem Event interrupt has been set to ‘1’. 0h = An accessory is not in the jack 1h = An accessory is in the jack 2 4-pole Standard R 0h Indicates if a 4-pole Standard headset is detected. Bit is set after a completed detection sequence. 0h = Default state 1h = 4-pole standard headset detected 1 4-pole OMTP R 0h Indicates if a 4-pole OMTP headset is detected. Bit is set after a completed detection sequence. 0h = Default state 1h = 4-pole OMTP headset detected 0 3-pole R 0h Indicates if a 3-pole headphone is detected. Bit is set after a completed detection sequence. 0h = Default state 1h = 3-pole headphone detected 9.6.13 ADC Output Field Descriptions (Address 0Ch) Table 13. ADC Output Field Descriptions (Address 0Ch) Bit Field Type Reset Description 7-1 ADC R/W 00h This field contains the output of the key press detection ADC as described in the key press detection register Reserved R 0h 0 9.6.14 Threshold 1 Field Descriptions (Address 0Dh) Table 14. Threshold 1 Field Descriptions (Address 0Dh) Bit 7-01 0 Field Type Reset Description KP Threshold 1 R/W 20h This field sets the key 1 and key 2 boundary threshold. This value must always be lower than the Threshold 2 register for proper operation. Reserved R 0h 9.6.15 Threshold 2 Field Descriptions (Address 0Eh) Table 15. Threshold 2 Field Descriptions (Address 0Eh) Bit Field Type Reset Description 7-1 KP Threshold 2 R/W 40h This field sets the key 2 and key 3 boundary threshold. This value must always be lower than the Threshold 3 register and higher than the threshold 2 register for proper operation. Reserved R 0h 0 9.6.16 Threshold 3 Field Descriptions (Address 0Fh) Table 16. Threshold 3 Field Descriptions (Address 0Fh) Bit Field Type Reset Description 7-1 KP Threshold 3 R/W 68h This field sets the key 3 and key 4 boundary threshold. This value must always be higher than the Threshold 2 register for proper operation. Reserved R 0h 0 32 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 10 Application and Implementation 10.1 Application Information Figure 19 shows how a standard application schematic for the TS3A227E. The DSBGA package pin connections will be the same except for the lack of thermal pad. The following sections discuss how the TS3A227E works with different headsets and how the key press detection operates. 10.2 Typical Application 3.3 V C1 C2 R4 R3 R5 R2 R1 4 15 VDD Application Processor DET _TRIGGER 16 14 TIP MIC_PRESENT 9 7 SCL RING 2_SENSE SDA SLEEVE _SENSE 3 MICBIAS MICI 8 13 C3 12 INT R6 RING2 6 10 MICP GND _SENSE SLEEVE 5 11 GND _SENSE GNDA 1 C4 FM Network 2 GND GND L1 TS3A227ERVAR Figure 19. Typical Application Schematic Table 17. Component List COMPONENT VALUE NOTES R1 4.7 kΩ Pullup resistor must be sized to not exceed max IOL specification for INT pin R2 4.7 kΩ Pullup resistor must be sized to not exceed max IOL specification for INT pin R3 4.7 kΩ Pullup resistor must be sized to not exceed max IOL specification for INT pin R4 4.7 kΩ Pullup resistor must be sized to not exceed max IOL specification for INT pin R5 10 kΩ Pulldown resistor for high to low transition on DET_TRIGGER R6 2.2 kΩ ±1% MICBIAS pullup resistor must be ±1% for Key Press Detection to function properly C1 10 µF De-coupling capacitor for VDD C2 100 nF De-coupling capacitor for VDD C3 1 µF Value can vary depending on codec needs C4 47 nF Value can vary depending on FM matching network needs. If FM transmission is not being supported by the application this capacitor is not needed L1 180 nF Value can vary depending on FM matching network needs. If FM transmission is not being supported by the application this inductor is not needed and GNDA must be shorted to GND 10.2.1 Design Requirements 10.2.1.1 Standard I2C Interface Details The bi-directional I2C bus consists of the serial clock (SCL) and serial data (SDA) lines. Both lines must be connected to a positive supply via a pull-up resistor when connected to the output stages of a device. Data transfer may be initiated only when the bus is not busy. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 33 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com I2C communication with this device is initiated by the master sending a START condition, a high-to-low transition on the SDA line while the SCL line is high. After the start condition, the device address byte is send, MSB first, including the data direction bit (R/W). This device does not respond to the general call address. After receiving the valid address byte (0x77 read, 0x76 write), this device responds with an ACK, a low on the SDA line during the high of the ACK-related clock pulse. The data byte follows the address ACK. The R/W bit is kept low for transfer from the master to the slave. The data byte is followed by an ACK sent from this device. Data are output only if complete bytes are received and acknowledged. The output data is valid at time (tpv) after the low-to-high transition of SCL, during the clock cycle for the ACK. On the I2C bus, only one data bit is transferred during each clock pulse. The data on the SDA line must remain stable during the high pulse of the clock period, as changes in the data line at this time are interpreted as control commands (START or STOP). A Stop condition, a low-to-high transition on the SDA line while the SCL line is high, is sent by the master. The number of data bytes transferred between the start and the stop conditions from the transmitter to receiver is not limited. Each byte of eight bits is followed by one ACK bit. The transmitter must release the SDA line before the receiver can send an ACK bit. A slave receiver that is addressed must generate an ACK after the reception of each byte. The device that acknowledges has to pull down the SDA line during the ACK clock pulse so that the SDA line is stable low during the high pulse of the ACK-related clock period. Setup and fold times must be taken into account. Start Condition Clock pulse for acknowledgment ST SCL 1 2 8 9 SDA Output by Transmitter NACK SDA Output by Receiver ACK 2 Figure 20. Acknowledgment on the I C Bus 10.2.1.2 Write Operations Data is transmitted to the TS3A227E by send the device salve address and setting the LSB to a logic 0. The command byte is sent after the address and determines which register receives the data that follows the command byte. The next byte is written to the specified register on the rising edge of the ACK clock pulse. See Figure 2 and Figure 3 for different modes of write operations. Slave Address ST START A6 A5 A4 A3 A2 Sub Address A1 A0 0 A 0 0 R/W ACK From slave 0 0 0 Data Byte 0 0 0 A D7 Register Address N Auto Increment D6 D5 D4 D3 Data Byte D2 D1 D0 A Data to Register N ACK From slave D7 D6 D5 D4 D3 D2 D1 D0 A Data to Register N ACK From slave SP STOP ACK From slave Figure 21. Repeated Data Write to a Single Register 34 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 Figure 22. Burst Data Write to Multiple Registers 10.2.1.3 Read Operations The bus master must send the TS3A227E slave address with the LSB set to logic 0. The command byte is sent after the address and determines which register is accessed. After a restart, the device slave address is sent again but this time the LSB is set to logic 1. Data from the register defined by the command byte then is sent back to the host by the TS3A227E. Data is clicked into the SDA output shift register on the rising edge of the ACK clock pulse. Figure 23 and Figure 24 show read operations that use a restart between the sub-address write and the read operation. A Stop and start condition between the sub-address write and the read operation is also acceptable. Notes: 1. SDA is pulled low on ACK from the slave or master. 2. Register write always a require sub-address write before writing the first data. 3. Repeated data writes to a single register continue indefinitely until n I2C Stop or Re-start. 4. Repeated data reads from a single register continue indefinitely until an I2C NACK is received from the master 5. Burst data writes start at the specified register address, then advance to the next register address, even to the read-only registers and continue until the Stop or Re-start. For the read-only registers, data write appears to occur, although the register contents are not changed by the write operations. 6. Burst data reads start at the specified register address, then advance to the next register address and continues until an I2C NACK is received from the master. Slave Address ST START A6 A5 A4 A3 A2 Sub Address A1 A0 0 A 0 0 0 R/W ACK From slave 0 0 Slave Address 0 0 0 A RS A6 A5 A4 A3 A2 Data Byte A1 A0 Re-start ACK From slave D6 D5 D4 D3 D7 D6 D5 D4 D3 D2 D1 D0 A Data from Register N ACK From slave Data Byte D7 A R/W Register Address N Auto Increment 1 ACK From master Data Byte D2 D1 D0 A Data from Register N ACK From master D7 D6 D5 D4 D3 D2 D1 D0 NA Data from Register N SP Stop NACK From master Figure 23. Repeated Data Read From a Single Register Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 35 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 Slave Address ST A6 A5 A4 A3 www.ti.com Sub Address A2 A1 A0 START 0 A 0 0 0 0 R/W 0 Slave Address 0 0 0 A RS A6 A5 A4 A3 A2 Data Byte A1 A0 Auto Increment Re-start ACK From slave D6 D5 D4 D3 D7 D6 D5 D4 D3 D2 D1 D0 A Data from Register N ACK From slave Data Byte D7 A R/W Register Address N ACK From slave 1 ACK From master Data Byte D2 D1 D0 A D7 D6 D5 Data from Register N D4 D3 D2 D1 D0 NA Data from Register N ACK From master SP Stop NACK From master Figure 24. Burst Data Read From Multiple Registers 10.2.2 Detailed Design Procedure 10.2.2.1 Accessory Insertion The TS3A227E monitors the DET_TRIGGER pin to determine when an insertion event occurs. A high to low transition one the DET_TRIGGER pin will start the internal de-bounce timer (default 90 ms). This transition is shown in Figure 19. Once the de-bounce timer has expired, it is determined that an accessory is inserted and the detection algorithm is performed to determine what the accessory is and where the ground line is located. Audio Jack TS3A227 E VDD RING1 DET_TRIGGER High to Low TIP L R ? ? S3PR RING 2 MICP S3PS S 3GS SLEEVE GND_SENSE S3 GR S1 RING2 GNDFET S2 GND SLEEVE GNDFET GNDA RING2 DFET SLEEVE DFET GND Figure 25. DET_TRIGGER Transition Diagram Once a DET_TRIGGER transition has occurred, any I2C register changes will not be serviced until after the debounce and detection sequence have completed. If DET_TRIGGER transitions from Low to High before the debounce period has expired. The I2C register changes will be serviced before a new de-bounce timer is started from another High to Low transition on the DET_TRIGGER pin. The I2C communication has to complete before the next High to Low transition to take effect. 10.2.2.2 Audio Jack Selection The audio jack the system uses plays a key role in how the system performs and the experience the end user has with the equipment. In real-world scenarios a user might plug in the headset to the audio jack very slowly. This creates a challenging case for the TS3A227E detection mechanism and detection error can occur if care is not taken when designing the components around the TS3A227E. 36 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 The main concern for slow plug-in is the detection process may have already started before the headset is fully inserted into the jack. If the detection is running with the headset out of position, a false impedance measurement may occur. For best performance a jack should be chosen that puts the detection mechanism on the TIP pin at the end of physical jack to ensure that it is fully inserted. The TS3A227E EVM contains test points for all the jack pins and can be blue wired to prototype audio jacks for testing. 10.2.2.3 Switch Status Table 18 depicts the switch status for each device configuration. A switch diagram is provided in Figure 26. Table 18. Switch Status RING2 SLEEVE GNDFET GNDFET RING2 DFET SLEEVE DFET High-Z On On High-Z High-Z High-Z High-Z On On On On Device State S1 S2 S3PS S3PR S3GS S3GR Default State (No insertion or VDD = 0 V) High-Z High-Z High-Z High-Z High-Z High-Z High-Z Detection running High-Z On High-Z High-Z High-Z High-Z On High-Z High-Z High-Z On On 3-pole 3-pole with FM support On High-Z High-Z High-Z High-Z On On High-Z High-Z High-Z 4-pole OMTP High-Z High-Z High-Z On On High-Z High-Z On High-Z On 4-pole OMTP with FM support High-Z High-Z High-Z On On High-Z High-Z On High-Z High-Z 4-pole Standard High-Z High-Z On High-Z High-Z On On High-Z On High-Z 4-pole Standard with FM support High-Z High-Z On High-Z High-Z On On High-Z High-Z High-Z TS3 A227E S3 PR RING 2_SENSE MICP S 3PS S3GS SLEEVE _SENSE GND_SENSE S3GR RING2 SLEEVE S1 S2 RING2 GNDFET GND SLEEVE GNDFET GNDA RING2 DFET SLEEVE DFET GND Figure 26. Switch Diagram Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 37 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 10.2.2.3.1 Switch Status Diagrams Closed switches are red in Figure 27 through Figure 31. The diagrams reflect switch states when manual switch control is not enabled. TS3 A227E S3 PR RING 2_SENSE MICP S 3PS Audio Jack S3GS SLEEVE _SENSE GND_SENSE S3GR RING2 SLEEVE S1 S2 RING2 GNDFET GND SLEEVE GNDFET RING2 DFET SLEEVE DFET GNDA GND Figure 27. Default Switch State With No Accessory Inserted TS3 A227E S3 PR RING 2_SENSE MICP S 3PS Audio Jack S3GS SLEEVE _SENSE GND_SENSE L R ? ? S3GR RING2 SLEEVE S1 S2 RING2 GNDFET GND SLEEVE GNDFET RING2 DFET GNDA SLEEVE DFET GND Figure 28. Switch State During Detection 38 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 TS3 A227E S3 PR RING 2_SENSE MICP S 3PS Audio Jack S3GS SLEEVE _SENSE GND_SENSE L R G S3GR RING2 SLEEVE S1 S2 RING2 GNDFET GND SLEEVE GNDFET RING2 DFET SLEEVE DFET GNDA GND Figure 29. Switch State After Detecting a 3-Pole Headphone TS3 A227E S3PR RING 2_SENSE MICP S3PS Audio Jack S3GS SLEEVE _SENSE GND_SENSE L R M G S3GR RING2 SLEEVE S1 S2 RING2 GNDFET GND SLEEVE GNDFET RING2 DFET GNDA SLEEVE DFET GND Figure 30. Switch State After Detection a 4-pole OMTP Headset Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 39 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 TS3 A227E www.ti.com S3PR RING 2_SENSE MICP S3PS Audio Jack S3GS SLEEVE _SENSE GND_SENSE L R G M S3GR RING2 SLEEVE S1 S2 RING2 GNDFET GND SLEEVE GNDFET RING2 DFET GNDA SLEEVE DFET GND Figure 31. Switch State After Detecting a 4-Pole Standard Headset 40 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 10.2.2.4 Key Press Detection 10.2.2.4.1 Key Press Thresholds The TS3A227E features the ability to adjust the key press thresholds on the fly. The default key press bins are shown below with the default values of the threshold registers optimized to detect these keys. The values for the bins represent the equivalent resistance of the key being pressed with the microphone in parallel. Any equivalent resistance outside these bins is not guaranteed to be detected correctly. KEY TYPICAL RESISTANCE EQUIVALENT RESISTANCE RANGE Key 1 50 Ω 0 Ω – 66 Ω Key 2 135 Ω 126 Ω – 156 Ω Key 3 240 Ω 228 Ω – 264 Ω Key 4 470 Ω 360 Ω – 680 Ω The Threshold 1 register (Address 0Dh) adjusts the detection boundary between Key 1 and Key2. The Threshold 2 register (Address 0Eh) adjusts the detection boundary between Key 2 and Key 3. The Threshold 3 register (Address 0Fh adjusts the detection boundary between Key 3 and Key4. The thresholds are 7 bit values that can be adjusted for the following formula. Target bin boundary = KP Threshold[6:0] × 6 Ω (1) It is important for the proper operation of the KP detection algorithm that the thresholds be ordered correctly: KP Threshold 1< KP Threshold 2 < KP Threshold 3. Placing them out of order will cause incorrect keys to be detected. For information on defining the key press gray zones see the Key Press Gray Zones section. 10.2.2.4.2 System Requirements The Key Press detection algorithm has the following system requirements to be function properly: • MICBIAS output voltage equivalent to key press settings 2 register value within 2.5% • MICBIAS pullup resistance equal to 2.2 kΩ ±1% • Audio jack contact resistance must be limited to < 100 mΩ. See further information below. Figure 32 depicts the resistor network without the TS3A227E switches for simplicity. MICBIAS 2.2 kΩ SLEEVE /RING2 Key1 Key2 Key3 Key4 MIC Figure 32. Headset Microphone and Key Network When the user presses a key it creates a voltage divider network between the MICBIAS output of the codec and the system ground. This will be a measurable voltage on the SLEEVE/RING2 pin that follows Equation 2. Note that this is simplified because it does not include the TS3A227E switches or the contact resistance of the jack itself. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 41 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 VSLEEVE/RING2 = (VMICBIAS +   DVMICBIAS )´  www.ti.com REQ (2.2k + D2.2k ) +  REQ (2) The REQ can be calculated with the following: R ´ RKEY REQ =   MIC RMIC +  RKEY (3) As a result of the above calculations, an ADC attempting to detect the voltage on SLEEVE/RING2 to determine which key is pressed (whichever is the microphone pin) is reliant on the accuracy on the MICBIAS output and the 2.2 kΩ pull-up resistor. The key press bins are targeted assuming ideal values for these system conditions and then the gray zone between the bins takes into account the system variations. As a result the better the accuracy of the MICBIAS output and pull-up resistor the better the accuracy of the key press detection. In addition to the above, the contact resistance of the audio jack itself can play a role in how accurate the key press detection is. A general rule is less contact resistance is better. In the figure below a more complete picture of the system and the voltage the TS3A227E will detect is shown. MICBIAS R Audio 2.2 kΩ RING2_SENSE L Audio 32 Ω speakers Key R EQ KP ADC Jack contact resistance 20 -100 mohm SLEEVE _SENSE SLEEVE Trace routing resistance The red line denotes the current path for the output of the codec to follow when it enters the speakers and eventually sinks into the GNDFETs of the TS3A227E. This audio current adds a voltage offset at the audio jack contact resistance, the trace routing resistance, and the GNDFET itself. Because the TS3A227E has kelvin connections to the jack via the SLEEVE_SENSE RING2_SENSE pins the trace routing resistance and GNDFET induced voltage offsets can be compensated. However, the jack contact resistance is not visible by the device and cannot be compensated for. To maintain the default bin targets the system must ensure that for a given audio jack contact resistance the max current being output by the codec/amplifier lies below the curve in Figure 34. This ensures a max error introduced of 5 mV into the KP detection algorithm. 42 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 10.2.2.4.3 Key Press Grey Zones When defining custom bins and thresholds it is important to also correctly define the “gray zone” between the bins to ensure that the system will always correctly identify the key that is being pressed. The gray zone region accounts for the absolute error in key press detection, encompasses the error of the internal ADC along with errors from system tolerances and variation. The equation below can be used to determine the gray zone required between each of the bins. Note that the size of the gray zone will vary depending on the actual value of the key press threshold. Gray Zone = ± [(Ɛ(ADC,GAIN) + ƐMICBIAS + ƐRBIAS + Ɛ(CONT,GAIN) ) × R(KP Threshold) + (Ɛ(ADC,OFF) + Ɛ(CONT,OFF) + KBUFF ) × 6 Ω] (4) TERM DESCRIPTION VALUE Ɛ(ADC,GAIN) Internal ADC gain error ƐMICBIAS Codec MICBIAS output voltage variation. Default bin values assume an output variation of 2.5%. 0.025% (1) ƐRBIAS MICBIAS resistor variation. Default bin values assume a 1% tolerance of the 2.2 kΩ MICBIAS resistor. 0.01% (1) ƐCONT.GAIN Gain error introduced by contact resistance of the audio jack. ƐKP Threshold KP threshold target identified by system. E.g. the KP Threshold between bins 1 and 2 for the default key press bins is 96 Ω. ƐADC,OFF Internal ADC offset and linearity error UNIT 0.015% RContact ´ IMAX VMICBIAS R Defined by system (1) Ω 1.5 LSB Contact ´I MAX VMICBIAS ƐCONT,OFF Offset error introduced by contact resistance of the audio jack. KBUFF Buffer constant added to total system gray zone to ensure bin values are detected correctly. It is recommended to use a minimum of 2 for this when defining key gray zones to ensure system level margins. RContact LSB 128 2 LSB Max contact resistance of audio jack Defined by system (1) Ω IMAX Maximum combined (Right and Left) audio output current into the jack. Defined by system (1) A VMICBIAS MICBIAS output voltage of the codec Defined by system (1) V (1) These values can vary depending on the system Example Calculation The default KP Threshold 1 value for the TS3A227E is 10h or 96 Ω. Using the Gray Zone equation the specified gray zone between keys 1 and 2 can be confirmed assuming the following: • VMICBIAS = 2.2 V • IMAX × RContact = 5 mV • R(KP Threshold) = 96 Ω • Default values for all other terms é ù æ ö êæ ú ç ÷ 5  mV ö 5  mV Gray  Zone = ± êç 0.015  +     0.025  +     0.01  +     ´  96    W   + ç 1.5  +   +   2 ÷ ´ 6  W ú ÷ 2.2 2.2 ø êè ú çç ÷÷ êë úû 128 è ø (5) This yields a gray zone of ± 27 Ω. The KP Threshold 1 gray zone can be used to identify the upper limit of key 1 and the lower limit of key 2: Bin 1 upper limit = KP Threshold 1 – Gray Zone 1 Bin 2 lower limit = KP Threshold 1 + Gray Zone 1 This formula yields an upper limit of 69 Ω. Because each LSB is 6 Ω we round down to the even number of 66 Ω. For the beginning of key 2 we set the value at (96 Ω + 27 Ω) or 126 Ω (123 Ω rounded up to the nearest LSB). This method can be used to define the rest of the key bin thresholds. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 43 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 10.2.2.4.4 Behavior The TS3A227E can monitor the microphone line of a 4-pole headset to detect up to 4 key presses/releases and report the key press events back to the host. The key press detection must be activated manually by setting the KP Enable bit of the Device Settings 2 register. To ensure proper operation the MICBIAS voltage must be applied to MICP before enabling key press detection. Insertion Event MICBIAS enabled 4-pole inserted ? Enable Key Press Detection MICBIAS Stable ? Figure 33. Proper Key Press Enable Sequence The TS3A227E monitors the S3 switch matrix to determine the location of the microphone. If the Manual Switch Control bit is set to ‘1’, the S3 matrix must be configured in one of the following 2 configurations for the key press detection to operate. Other configurations are not supported with key press detection. S3PR S3PS S3GR S3GS MIC LOCATION On High-Z High-Z On RING2 High-Z On On High-Z SLEEVE If the voltage on the microphone line drops below the key press detection threshold for a duration longer than the key press de-bounce time, the key press is considered to be valid. At this point the detected key has the corresponding Key # Press interrupt bit set to ‘1’ and the interrupt is asserted. The corresponding Key # Release interrupt is cleared at the same time the Key # Press interrupt is set. Once the key is released for a duration longer than the key release de-bounce time, a Key Release interrupt is generated to inform the host that the key has been released. The corresponding Key # released interrupt bit is set to ‘1’ and the interrupt is asserted. The Key Press interrupt register will clear the contents and return to the default status of 0h when Key Press detection is disabled via an I2C write or a removal event. Notes about key press detection: • The MICBIAS setting adjusts the detection threshold and must be set to the value that is closest to the MICBIAS output of the codec. If the MICBIAS voltage being used is between different MICBIAS settings of the TS3A227E then the closest value that is greater than the MICBIAS voltage should be used. – E.G. if the codec output is 2.2 V, the 2.3 V MICBIAS setting in the TS3A227E should be used. • If any pending interrupt is not read by the host and a key is pressed, the TS3A227E will continue to run key press detection until the Key Press Enable bit is set to ‘0’ The host will interpret Key Press and Release interrupts using the following pseudo-code: If (Key # Press && Key # Release) { Key # was pressed one time and is not being held. } else if (Key # Release ) { Key # is being pressed, start the key press duration timer } else if (Key # Release) { Key # has been released, end the key press duration timer } The key press duration timer the host starts after reading that a key is pressed can be used as follows: If (Key # Press Duration Timer > XXX ms) { The Key # is being held down, handle accordingly. E.g. if Key # is the volume up key, the system will increment the volume until the Key # Release interrupt is read from the TS3A227E } 10.2.2.4.5 Single Key Press Timing The diagram below depicts a key press event where the MIC is on the SLEEVE pin. If the MIC is on RING2 the timing diagram will be same. 44 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 Key Press De-bounce Key Release De-bounce SLEEVE Voltage INT Key 1 Press Key 1 Release (A ) (B ) (C) (D) (E ) ( F) A. At this point the SLEEVE voltage has stopped glitching and the Key Press De-bounce timer will no longer restart. B. Point B is the end of the key press de-bounce period. INT will be asserted with the Key Press bit set. C. The host read and clears the interrupt register, de-asserting the INT pin. D. Here the key is released and the key release de-bounce period begins. E. The key release de-bounce period ends and the INT pin is asserted again with the Key Release bit set. F. Here the host reads and clears the interrupt register, de-asserting the INT pin. 10.2.2.4.6 Multiple Key Press Timing The diagram below depicts a multiple key press event in which the host does not immediately read the interrupt register. The MIC is on the SLEEVE pin in this diagram. If the MIC is on RING2 the timing diagram will be the same. NOTE If the KP Enable bit is set to ‘0’ during key press detection, key press detection will stop immediately and all the key press/release bits will be cleared. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 45 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com Key Press De-bounce Key Press De-bounce Key Release De-bounce Key 1 Pressed Key Press De-bounce Host I 2C Read Key Release De-bounce Key 2 Pressed Key 1 Pressed Sleeve Voltage INT Key 1 Press Key 1 Release Key 2 Press Key 2 Release Key 3 Press Key 3 Release Key 4 Press Key 4 Release ( A) 46 ( B) (C) (D) ( E) (F) (G) (H) (I) (J) ( K) A. The SLEEVE voltage drops below the Key Press Detection threshold and the Key Press De-bounce timer is started B. The end of the key press de-bounce timer. Key 1 is detected, the Key 1 Press interrupt is set and the interrupt line is asserted. The Key 1 Release interrupt is cleared. C. The SLEEVE voltage rises to MICBIAS as the key is released. The Key Release de-bounce timer is started. D. The Key Release de-bounce timer expires. The Key 1 Release bit is set and the interrupt is asserted. E. The SLEEVE voltage drops below the Key Press Detection threshold and the Key Press De-bounce timer is started F. The end of the key press de-bounce timer. Key 2 is detected, the Key 2 Press interrupt is set and the interrupt line is asserted. The Key 2 Release interrupt is cleared. G. The SLEEVE voltage rises to MICBIAS as the key is released. The Key Release de-bounce timer is started. H. The Key Release de-bounce timer expires. The Key 2 Release bit is set and the interrupt is asserted. I. The SLEEVE voltage drops below the Key Press Detection threshold and the Key Press De-bounce timer is started J. The end of the key press de-bounce timer. Key 1 is detected, the Key 1 Press interrupt is set and the interrupt line is asserted. The Key 1 Release interrupt is cleared. K. The host reads the I2C interrupt register and sees the following interrupts: mmm● Key 1 Press mmm● Key 2 Press mmm● Key 2 Release Using the pseudo-code in the key press detection section this is interpreted as: mmm● Key 2 was pressed one time and is not being held mmm● Key 1 is currently pressed, start the key press duration timer Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 10.2.2.4.7 Raw Data Key Press Detection In addition to threshold adjustment the TS3A227E features the ability to utilize the internal ADC raw output with the Raw Data En bit of the Device Setting 2 register. Notes on using the Raw ADC Output: • Key Press/Release interrupts that have not been serviced will not be cleared upon setting the Raw Data En bit to ‘1’. • By Setting the Raw Data En bit to ‘1’ the Key Press Threshold registers will be ignored. Instead of reporting key 1 through 4 press and releases the TS3A227E will only use Key 1 Press to indicate that a key is pressed and the Key 1 Release interrupt to report that the key was released. • The ADC Output register will only be cleared after the Raw Data En bit is cleared. The Raw Data En bit is cleared if the Key Press Enable bit is set to ‘0’. Consequently the ADC Output register clears if the Raw Data En bit is set to ‘0’, the Key Press Enable bit is set to ‘0’, or a removal event occurs. This means the ADC Output register will not clear after it is read. • A manual software trigger can be initiated after a key was pressed to run the ADC detection again. This will not set the Key 1 Press interrupt. • The ADC Output is updated after a Key is detected or if the manual ADC trigger bit is set to ‘1’. If an ADC conversion has completed the ADC Conversion interrupt bit will be set to ‘1’ regardless if there was a software initiated trigger or if a new key press was detected. • If the ADC has completed a conversion the output is always non 0 meaning the lowest possible detection threshold of the ADC is 01h. If the ADC Output register is 00h a conversion has not been completed or the ADC Output was cleared. The previous section on gray zones should be applied to any bins create for the raw ADC mode. 10.2.3 Application Curves Max Current Supported (mA) 300 250 200 150 100 50 0 20 30 40 50 60 70 80 Contact Resistance (m:) 90 100 D001 Figure 34. Max Current vs Contact Resistance 11 Power Supply Recommendations The TS3A227E is designed to operate from an input voltage supply range between 2.5 V and 4.5 V. This input supply is recommended to be decoupled to ground via two de-coupling capacitors of 0.1µF and 1µF placed as close as possible to the TS3A227E. To ensure a POR trip during a power-down and power-on event the power supply should follow the minimum and maximum VDD rise and fall times specified in the electrical specifications section. The TS3A227E features the ability to power the digital IO pins at a different rail than the supply. This allows systems to run the TS3A227E at 3.3 V and still use a 1.8 V eliminating the need for a translator. Have the 1.8 V rail while the device is powered from a higher voltage will increase the current consumption of the device due to CMOS shoot through current. This increased supply current is documented in the electrical specifications table. Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 47 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 12 Layout 12.1 Layout Guidelines • • • • • The VDD pin must have de-coupling capacitors places as closely to the device as possible. Typically recommended capacitors are a 0.1 µF and 1 µF capacitor. If FM support is not needed connect GNDA to system GND along with the GND connections with the shortest connections possible. RING2 and SLEEVE should be routed on the same layer as the audio jack for best performance with less than 50 mΩ to the audio jack pins. These two pins should have priority in layout over other pins. It is recommended to not use vias on these traces and pair the device with an audio jack that facilitates this type of layout. The RING2_SENSE and SLEEVE_SENSE pins are kelvin connections to the audio jack and should be shorted to RING2 and SLEEVE as close to the audio jack as possible. If there are 0 Ω resistors between the SLEEVE/RING2 pins and the jack, connect the SENSE lines to the jack sleeve and ring2 contacts. If a microphone is connected one of the SENSE lines will carry the microphone signal and the MICBIAS supply. It is recommended that these traces not have more than 1 Ω impedance to the jack. Route the I2C and digital signals away from the audio signals to prevent coupling onto the audio lines. 12.2 Layout Example (QFN) VIA to Power Ground Plane VIA to Bottom Copper or internal layer Top Layer Routing Bottom Layer Routing Board Edge 16 TIP DET_TRIGGER MIC_PRESENT 15 14 SLEEVE RING1 TIP INT 13 GND 1 12 GND 2 11 3 10 SDA RING2 RING 2 GNDA 3.5 mm Jack SLEEVE DET VDD 4 9 5 7 8 SL EEVE _SENSE RING 2_SENSE MICP GND_SE NS E Analog Ground 6 SCL to codec Figure 35. QFN Layout Example 48 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 12.3 Layout Example (DSBGA) WCSP PAD VIA to Power Ground Plane VIA to Bottom Copper or internal layer Top Layer Routing Bottom Layer Routing Board Edge 3.5 mm Jack A B VDD GND_ SENSE GND SDA MICP GND TIP SCL INT RING2 GNDA RING2_ SENSE 4 SLEEVE TIP 3 RING1 /MIC_ PRESENT SLEEVE SENSE 2 1 D RING2 C /DET_ TRIGGER SLEEVE Analog Ground DET Figure 36. DSBGA Layout Example Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E 49 TS3A227E SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 www.ti.com 13 Device and Documentation Support 13.1 Trademarks All trademarks are the property of their respective owners. 13.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 13.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 14 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 50 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TS3A227E PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TS3A227ERVAR ACTIVE VQFN RVA 16 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 227 TS3A227EYFFR ACTIVE DSBGA YFF 16 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 227E (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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