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TS3A227E
SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015
TS3A227E Autonomous Audio Accessory Detection and Configuration Switch
1 Features
3 Description
•
•
The TS3A227E is an autonomous audio accessory
detection and configuration switch that detects 3-pole
or 4-pole audio accessories and configures internal
switches to route the signals accordingly.
1
•
•
•
•
•
•
•
•
•
Supple Range of 2.5 V to 4.5 V
Accessory Insertion/Removal Detection with
Adjustable De-bounce Timings
Accessory Configuration Detection:
– Stereo 3-pole Headphone
– 4-pole Standard Headset with MIC on Sleeve
– 4-pole OMTP Headset with MIC on Ring2
Key Press Detection for Up to 4 Keys
Ultra Low Ground FET RON of 60 mΩ
Power Off Noise Removal
Isolation of MICBIAS From Audio Jack to Remove
Click/Pop Noise
Integrated Codec Sense Line
Manual I2C Control
FM Transmission Capability
Dual Small Package Options
– 16 Pin DSBGA
– 16 Pin QFN
2 Applications
•
•
•
•
Mobile Phones
Tablets
Notebooks and Ultrabooks
Anywhere a 3.5 mm Audio Jack is Used
The internal ground FETS of the TS3A227E have an
ultra-low RON of 60 mΩ to minimize crosstalk impact.
The ground FETs are also designed to pass FM
signals, making it possible to use the ground line of
the accessory as an FM antenna in mobile audio
applications.
Internal isolation switches allow the TS3A227E to
remove the click/pop noise that can be generated
during and insertion or removal of an audio
accessory. In addition depletion FETs prevent a
floating ground while the device is unpowered,
removing the humming noise present when leaving
accessories plugged into an unpowered system.
A low-power sleep mode is provided which shuts
down internal circuitry to achieve very low quiescent
current draw when no headset is inserted.
The TS3A227E features integrated key press
detection for detecting up to 4 keys with press and
release support.
Manual I2C control allows the TS3A227E to adapt to
application needs by providing control over debounce settings and switch states.
Device Information(1)
PART NUMBER
TS3A227E
PACKAGE
BODY SIZE (NOM)
QFN (16)
3.50 mm × 3.50 mm
DSBGA (16)
1.79 mm × 1.79 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
4 Simplified Schematic
BATTERY
Audio Codec
TS3A227E
Application
Processor
L
R
L
R G M
L
R M G
G
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS3A227E
SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
8
9
1
1
1
1
2
3
4
Absolute Maximum Ratings ...................................... 4
ESD Ratings ............................................................ 4
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Electrical Characteristics........................................... 6
I2C Interface Timing Characteristics ......................... 8
Timing Diagrams ....................................................... 9
Typical Characteristics ............................................ 12
Parameter Measurement Information ................ 12
Detailed Description ............................................ 17
9.1 Overview ................................................................. 17
9.2
9.3
9.4
9.5
9.6
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
Register Maps ........................................................
Register Field Descriptions .....................................
18
19
20
24
24
10 Application and Implementation........................ 33
10.1 Application Information.......................................... 33
10.2 Typical Application ............................................... 33
11 Power Supply Recommendations ..................... 47
12 Layout................................................................... 48
12.1 Layout Guidelines ................................................. 48
12.2 Layout Example (QFN) ......................................... 48
12.3 Layout Example (DSBGA) .................................... 49
13 Device and Documentation Support ................. 50
13.1 Trademarks ........................................................... 50
13.2 Electrostatic Discharge Caution ............................ 50
13.3 Glossary ................................................................ 50
14 Mechanical, Packaging, and Orderable
Information ........................................................... 50
5 Revision History
Changes from Revision A (December 2014) to Revision B
Page
•
Added DSBGA package to the Thermal Information table. ................................................................................................... 5
•
Updated SWITCH RESISTANCE for the DSBGA package. ................................................................................................. 6
Changes from Original (July 2014) to Revision A
•
2
Page
Initial release of full version document. ................................................................................................................................. 1
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SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015
6 Pin Configuration and Functions
DSBGA – YFF
Top View
QFN – RVA
Top View
SLEEVE_
SENSE
SLEEVE
GNDA
RING2
D
RING2_
SENSE
SCL
INT
TIP
C
MICP
SDA
GND_
SENSE
DET_
TRIGGER
GND
VDD
MIC_
PRESENT
GND
B
GND
1
GND
2
INT
1
TIP
2
DET_TRIGGER
3
MC_PRESENT
4
16
15
14
13
12
RING2
11
GNDA
THERMALPAD
SDA
3
10
SLEEVE
VDD
4
9
SCL
A
7
8
RING2_SENSE
SLEEVE_SENSE
GND_SENSE
6
MICP
5
Pin Functions
PIN
NAME
TYPE
DESCRIPTION
RVA
YFF
DET_TRIGGER
15
B1
I/O
GND
1, 2
A2, B2
GND
GNDA
11
D2
I/O
Ground connection for the internal ground FETs of the TS3A227E. If FM is being supported connect this pin
to the FM matching network. If FM is not being support connect this pin to system ground.
GND_SENSE
5
A4
I/O
Ground sense line for the codec.
INT
13
C2
GND
MIC_PRESENT
16
A1
I/O
Open drain output to indicate to the host that a headset with a microphone is inserted..
MICP
6
B4
I/O
Microphone signal connection to the codec. Microphone bias is applied to this pin.
RING2
12
D1
O
Headset current return path if RING2 is ground for the headset. Connect to 3.5 mm jack RING2 connection
with low DC resistance trace.
RING2_SENSE
7
C4
GND
SCL
9
C3
I
SDA
3
B3
I/O
Bidirectional data from/to I2C bus. This can be connected to VDD if I2C is not used.
SLEEVE
10
D3
O
Headset current return path if SLEEVE is GND for headset. Connect to 3.5 mm jack SLEEVE connection with
low DC resistance trace.
SLEEVE_SENSE
8
D4
GND
Connected to the SLEEVE pin of the 3.5 mm jack. If SLEEVE pin on plug in is MIC signal, this is connected to
MICP. If not, this is connected to GND_SENSE and becomes the ground sensing feedback for the accessory
GND
The THERMAL PAD of the RVA – QFN package must be connected to any internal PCB ground plane using
multiple vias for best thermal performance.
THERMAL PAD
TIP
14
C1
I/O
VDD
4
A3
PWR
A falling edge from high to low on this pin triggers accessory detection. This pin can be connected the
headset jack to allow automatic pull-down to ground after headset insertion to initialize detection.
Primary ground connection for the TS3A227E. Must be connected to system ground.
Open drain interrupt output from the TS3A227E to notify the host that an event has occurred. If I2C is not
used this pin must be grounded.
Connected to the RING2 pin of the 3.5 mm jack. If RING2 pin on plug in is MIC signal, this is connected to
MICP. If not, this is connected to GND_SENSE and becomes the ground sensing feedback for the accessory
Clock from I2C bus. This can be connected to VDD if I2C is not used.
Connect to the TIP pin of the 3.5 mm jack.
Power input to the TS3A227E. External de-coupling capacitors are required on this pin.
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SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range referenced with respect to GND (unless otherwise noted) (1)
Input Voltage
MIN
MAX
UNIT
VDD
–0.3
5
V
SDA, SCL, INT, MIC_PRESENT
–0.3
VDD + 0.5
V
TIP
–3.3
VDD + 0.5
V
DET_TRIGGER
–2.2
VDD + 0.5
V
–0.3
(2)
V
GND_SENSE, RING2, SLEEVE, RING2_SENSE, SLEEVE_SENSE,
MICP, GNDA
ON-state switch
current
3.6
and VDD +
0.5
Combined continuous current through R2GNDFET and SLV GNDFET
500
Continuous current through R2DFET and SLV DFET
50
Continuous current through S1
20
Continuous current through S2
20
Continuous current through S3PR
50
Continuous current through S3PS
50
Continuous current through S3GR
100
Continuous current through S3GS
100
mA
Operating ambient temperature range
–40
85
°C
Tstg
–65
150
°C
(1)
(2)
Storage temperature range
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
This rating is exclusive and the voltage on the pins must not exceed either 3.6 and VDD. E.g. if VDD = 4.5 V the voltage on the pin must
not exceed 3.6 V and if VDD is = 2.5 V the voltage on the pin must not exceed 3.0 V.
7.2 ESD Ratings
Human body model (HBM), ESD stress voltagenew note #1 to the ESD
Ratings table and combined MIN MAX column to VALUE (1) (2)
V(ESD)
Electrostatic discharge
Charged device model (CDM), ESD stress voltage
(1) (3)
Contact discharge model (IEC) ESD stress voltage on TIP,
DET_TRIGGER, RING2_SENSE, SLEEVE_SENSE, RING2, SLEEVE (1)
(1)
(2)
(3)
4
VALUE
UNIT
±2000
V
±500
V
±8000
V
Electrostatic Discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges
into the device
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VDD
VI
Power supply voltage range
Digital input voltage range
VIO
Input/output voltage range
4.5
V
0
VDD
V
–2.2
VDD
V
0
3.3 (1) and VDD
–3
VDD
0
VDD
V
RING2_SENSE, SLEEVE_SENSE, RING2,
SLEEVE, GND_SENSE, MICP
TIP
VO
Output voltage range
VIH
Input logic high
INT, MIC_PRESENT
SDA, SCL
Input logic low
TA
Operating ambient temperature
(1)
V
1.2
VDD
V
0.65 × VDD
VDD
V
SDA, SCL
0
0.4
V
DET_TRIGGER
0
0.4 × VDD
V
–40
85
°C
DET_TRIGGER
VIL
UNIT
2.5
SDA, SCL
DET_TRIGGER
MAX
This rating is exclusive and the voltage on the pins must not exceed either 3.3 and VDD. E.g. if VDD = 4.5 V the voltage on the pin must
not exceed 3.3 V and if VDD is = 2.5 V the voltage on the pin must not exceed 2.5 V.
7.4 Thermal Information
THERMAL METRIC (1)
TS3A227E
TS3A227E
RTE
YFF
16 PINS
16 PINS
RθJA
Junction-to-ambient thermal resistance
45.9
77.9
RθJC(top)
Junction-to-case (top) thermal resistance
52.6
0.6
RθJB
Junction-to-board thermal resistance
21.2
12.5
ψJT
Junction-to-top characterization parameter
0.9
2.3
ψJB
Junction-to-board characterization parameter
21.2
12.5
RθJC(bot)
Junction-to-case (bottom) thermal resistance
4.3
-
(1)
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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7.5 Electrical Characteristics
Unless otherwise noted the specification applies over the VDD and ambient operating temperature range.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
2.5
3.3
4.5
V
0.5
10
µA
7
15
µA
Manual switch control = ’1’ , I C bus inactive,
VDD = 2.5 V to 4.5 V Depletion FETs off
20
40
µA
3-pole accessory inserted.
I2C bus inactive (1), FM Support = ’0’
VDD = 2.5 V to 4.5 V
11
20
µA
3-pole accessory inserted.
I2C bus inactive, (1) FM Support = ’1’
VDD = 2.5 V to 4.5 V
25
45
µA
4-pole Accessory inserted.
I2C bus inactive, (1) VDD = 2.5 V to 4.5 V
25
40
µA
4-pole Accessory inserted.
KP detection enabled
I2C bus inactive, (1) VDD = 2.5 V to 4.5 V
30
45
µA
1
8
µA
RING2 GNDFET on resistance (DSBGA
Package)
40
85
RING2 GNDFET on resistance (QFN
Package)
60
95
40
85
60
95
VDD = 3.3 V,
VSLEEVE_SENSE/RING2_SENSE = 0 V to 2.7 V,
IMICP = ±10 mA
3
6.5
3
6.5
VDD = 3.3 V,
VSLEEVE_SENSE/RING2_SENSE = 0 V to 2.7 V,
IGND_SENSE = ±75 mA
0.5
1
0.5
1
SUPPLY VOLTAGE
VDD
Supply voltage
No accessory inserted. I2C bus inactive (1)
VDD = 2.5 V to 4.5 V
Manual switch control = ’1’ , I2C bus inactive, (1)
VDD = 2.5 V to 4.5 V, Depletion FETs on
2
IDD
Quiescent current
Quiescent current addition from using a
1.8 V I2C bus. (2)
IDD_1.8
No accessory inserted.
I2C bus inactive at 1.8 V, (3)
VDD = 2.5 V to 4.5 V
SWITCH RESISTANCE
RR2GNDFT
RSLVGNDFT
VDD = 3.3 V, VGND = 0V,
SLEEVE GNDFET on resistance (DSBGA IGNDA = 75 mA
Package)
SLEEVE GNDFET on resistance (QFN
Package)
mΩ
RS3PS
S3PS on resistance
RS3PR
S3PR on resistance
RS3GS
S3GS on resistance
RS3GR
S3GR on resistance
RS1
Switch 1 on resistance
15
30
RS2
Switch 2 on resistance
15
30
RR2DFET
RING2 depletion FET on resistance
75
150
RSLVDFET
SLEEVE depletion FET on resistance
75
150
VDD = 3.3 V, IGND = 10 mA
Ω
Ω
Ω
Ω
SWITCH LEAKAGE CURRENT
IOFF
RING2 pin off leakage
1
SLEEVE pin off leakage
1
RING2_SENSE pin off leakage
SLEEVE_SENSE pin off leakage
VIN = 0 V to 3.3 V, VDD = 3.3 V
MICP pin off leakage
(1)
(2)
(3)
6
S2PS, S3PR, S3GS, S3GR on leakage
1
µA
1
GND_SENSE pin off leakage
ION
1
1
VSLEEVE/RING2 = 0V, VDD = 3.3 V
1
µA
The I2C bus is inactive if both the SDA and SCL lines are tied to VDD.
If the I2C bus is operating at 1.8 V the IDD_1.8 current number will be in addition to the other current consumption numbers specified.
The I2C bus is inactive if both the SDA and SCL lines are tied to 1.8 V.
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Electrical Characteristics (continued)
Unless otherwise noted the specification applies over the VDD and ambient operating temperature range.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SWITCH TIMING
Turn off time for S3PS, S3PR, S3GS,
S3GR
tOFF
tON
VDD = 2.5 V, 3.3 V, 4.5 V,
RL = 300 Ω, CL = 50 pF
VSLEEVE_SENSE/RING2_SENSE = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V)
5
µs
VDD = 2.5 V, 3.3 V, 4.5 V
Turn off time for S1, S2, RING2 GNDFET, RPU = 1500 Ω, CL = 50 pF
SLEEVE GNDFET
VPU = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V)
5
µs
Turn off time for RING2 DFET and
SLEEVE DFET
VDD = 2.5 V, 3.3 V, 4.5 V
RPU = 1500 Ω, CL = 50 pF
VPU = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V)
500
µs
Turn on time for S3PS, S3PR, S3GS,
S3GR
VDD = 2.5 V, 3.3 V, 4.5 V
RL = 300 Ω, CL = 50 pF
VSLEEVE_SENSE/RING2_SENSE = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V)
1
µs
VDD = 2.5 V, 3.3 V, 4.5 V
Turn on time for S1, S2, RING2 GNDFET, RPU = 1500 Ω, CL = 50 pF
SLEEVE GNDFET
VPU = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V)
35
µs
VDD = 2.5 V, 3.3 V, 4.5 V
RPU = 1500 Ω, CL = 50 pF
VPU = 2.5 V (VDD = 2.5 V),
3.3 V (VDD = 3.3 V, VDD = 4.5 V)
1
µs
Turn on time for RING2 DFET and
SLEEVE DFET
DIGITAL I/O
MIC_PRESENT low level output voltage
VOL
INT low level output voltage
SDA low level output voltage
VDD = 3.3 V, IOL = 10 mA
VDD = 3.3 V, IOLMAX = 3 mA
SDA, SCL
VIH
Input logic high
VIL
Input logic low
RPU/DT
Internal DET_TRIGGER pull-up
resistance
DET_TRIGGER
0
0.4
0
0.4
0
0.4
1.2
VDD
VDD x
0.65
VDD
SDA, SCL
0
0.4
DET_TRIGGER
0
VDD x 0.4
VDD = 3.3 V, I/DET_TRIGGER = 1 µA
0.5
1
1.85
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V
MΩ
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Electrical Characteristics (continued)
Unless otherwise noted the specification applies over the VDD and ambient operating temperature range.
PARAMETER
TEST CONDITIONS
MIN
TYP
VDD = 3.3 V ± 200 mVPP, f = 217 Hz, RL at
RING2= 50 Ω
–95
–120
VDD = 3.3 V ± 200 mVPP, f = 1 kHz, RL at
RING2= 50 Ω
–85
–110
VDD = 3.3 V ± 200 mVPP, f = 20 kHz, RL at
RING2= 50 Ω
–70
–90
MAX
UNIT
DYNAMIC CHARACTERISTICS
PSR217
PSR1k
Power supply rejection
PSR20k
dB
ISOS3
SLEEVE_SENSE or RING2_SENSE to
MICP Isolation
VIN = 200 mVPP, f = 20 Hz – 20 kHz, RL = 50 Ω
–90
dB
SEPS3
SLEEVE_SENSE to RING2_SENSE
Separation
VIN = 200 mVPP, f = 20 Hz – 20 kHz, RL = 50 Ω
–75
dB
BW
Bandwidth through GNDFETs
VIN = 60 mVPP, IBIAS = 10 mA
150
MHz
THD200
MICP to RING2_SENSE or
SLEEVE_SENSE total harmonic
distortion
THD500
120
VIN = 1.5 V + 200 mVPP, f = 20 Hz – 20 kHz,
RS = 600 Ω, RL = 600 Ω
0.003 %
VIN = 1.5 V + 500 mVPP, f = 20 Hz – 20 kHz,
RS = 600 Ω, RL = 600 Ω
0.002%
SNR
MICP to RING2_SENSE or
SLEEVE_SENSE signal to noise ratio
VIN = 1 VRMS, f = 20 Hz – 20 kHz,
RS = 600 Ω, RL = 600 Ω
tDET
Detection sequence duration
Time between DET_TRIGGER transition from
high to low and INT transition from high to low.
Default 90 ms insertion debounce.
175
210
ms
Tpower-up
Power up time Power-up time
Time from VDD > 2.5 V till I2C communication is
ready
20
25
ms
tREMOVAL
Removal wait period
Time between DET_TRIGGER transition from
low to high and RING2/SLEEVE DFETs turning
on
50
65
ms
–90
–110
dB
7.6 I2C Interface Timing Characteristics
Unless otherwise noted the specification applies over the VDD and ambient operating temperature range
STANDARD MODE
I2C BUS
PARAMETER
fscl
I2C clock frequency
2
FAST MODE I2C
BUS
MIN
MAX
MIN
MAX
0
100
0
400
UNIT
kHz
tsch
I C clock high time
4
0.6
tscl
I2C clock low time
4.7
1.3
tsp
I2C spike time
tsds
I2C serial data setup time
tsdh
I2C serial data hold time
ticr
I2C input rise time
1000
21
300
ns
ticf
I2C input fall time
300
21
300
ns
tocf
I2C output fall time; 10 pF to 400 pF bus
300
20 + 0.1
Cb
300
µs
tbuf
I2C bus free time between Stop and Start
4.7
1.3
µs
tsts
I2C Start or repeater Start condition setup time
4.7
0.6
µs
tsth
I2C Start or repeater Start condition hold time
4
0.6
µs
tsps
I2C Stop condition setup time
4
0.6
tvd(data)
Valid data time; SCL low to SDA output valid
3.45
0.3
0.9
µs
tvd(ack)
Valid data time of ACK condition; ACK signal from SCL low to SDA
(out) low
3.45
0.3
0.9
µs
Cb
I2C bus capacitive loading
400
0
400
pF
8
50
250
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µs
50
100
0
0
µs
ns
ns
0
ns
µs
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SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015
7.7 Timing Diagrams
Insertion
de-bounce time
(90 ms default )
Removal
wait time
Accessory detection time
DET _TRIGGER
INT
MIC_PRESENT
High
(A)
(B)
(C)
(D)
(E)
(F)
A.
(This is the point that DET_TRIGGER has stopped glitching and is fully low. The de-bounce time of 90 ms starts from
the point that the pin is constantly below the VIL level. Any time the DET_TRIGGER pin cross the VIH level the debounce timer will restart.
B.
Point B is the end of the insertion de-bounce time and the beginning of accessory detection.
C.
Detection has completed at this point. The switches will be routed before the INT pin is pulled low.
D.
INT is cleared after the host reads the interrupt register.
E.
The headset is removed here. The switch states will change immediately and INT will be pulled low.
F.
After a 50 ms removal de-bounce timer the TS3A227E will go back into sleep mode if manual switch control is not
enabled
Figure 1. 3-Pole Accessory
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Timing Diagrams (continued)
Insertion
de-bounce time
(90 ms default )
Removal
wait time
Accessory detection time
DET _TRIGGER
INT
MIC_PRESENT
High
(A)
(B)
(C)
(D)
(E)
(F)
A.
This is the point that DET_TRIGGER has stopped glitching and is fully low. The de-bounce time of 90 ms starts from
the point that the pin is constantly below the VIL level. Any time the DET_TRIGGER pin cross the VIH level the debounce timer will restart.
B.
Point B is the end of the insertion de-bounce time and the beginning of accessory detection.
C.
Detection has completed at this point. The switches will be routed before the INT and MIC_PRESENT pins are pulled
low.
D.
INT is cleared after the host reads the interrupt register.
E.
The headset is removed here. The switch states will change immediately and INT will be pulled low. The
MIC_PRESENT pin will be released.
F.
After a 50 ms removal de-bounce timer the TS3A227E will go back into sleep mode if manual switch control is not
enabled
Figure 2. 4-Pole Accessory
10
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Timing Diagrams (continued)
7.7.1 Removal
A removal event will interrupt any on-going process in the TS3A227E. The following diagram depicts how the
device “jumps” during a removal.
If the removal event occurs during the insertion de-bounce period the TS3A227E will jump to the (A) point of the
diagram depicted by the green arrow and line.
Any time after point (B) has been reached and the accessory is removed the device jumps to point (E), which
includes key press detection. Under Manual Switch Control the switch states will not change.
Insertion
de-bounce time
(90 ms default )
Removal
wait time
Accessory detection time
DET _TRIGGER
INT
MIC_PRESENT
High
(A)
(B)
(C)
(D)
(E)
( F)
Figure 3. Removal Timing During Insertion
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7.8 Typical Characteristics
0.0035
200 mVpp
500 mVpp
0.003
THD (%)
0.0025
0.002
0.0015
0.001
0.0005
0
10
2030 50 100 200
500 1000
Frequency (Hz)
10000
100000
D001
Figure 4. S3PX THD
8 Parameter Measurement Information
Channel ON
R ON = V SLEEVE/RING2 / I GNDA
VSLEEVE/RING2
IGNDA
R2/SLV GNDFET
Figure 5. RING2/SLEEVE GNDFET On Resistance Measurement
Channel ON
R ON = V SLEEVE/RING2 / I GND
VSLEEVE/RING2
R2/SLV DFET
IGND
Figure 6. RING2/SLEEVE DFET On Resistance Measurement
12
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Parameter Measurement Information (continued)
Channel ON
R ON = VMICP/GND_SENSE / I GND
VMICP/GND_SENSE
I GND
S1/S2
Figure 7. S1/S2 On Resistance Measurement
Channel ON
R ON = VMICP/GND_SENSE / I RING2_SENSE /SLEEVE_ SENSE
VMICP/GND_SENSE
S3PS/R
S3GS/R
IRING 2_SENSE /SLEEVE_ SENSE
Figure 8. S3PS, S3PR, S3GS, S3GR On Resistance Measurement
Channel OFF
VIN
V OUT
Switch
Figure 9. Switch Off Leakage Current
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Parameter Measurement Information (continued)
Channel ON
V OUT
I Leakage
Switch
Figure 10. Switch On Leakage Current
Channel ON
3.3 V ± 200 mV PP
VDD
Source
Signal
Reference
Test
Switch
50 Ω
Source Generator
Figure 11. Power Supply Rejection Ratio (PSRR)
Channel Off
Network Analyzer
VMICP/GND_ SENSE
VSLEEVE _SENSE/RING2 _SENSE
50 Ω
Source
Signal
50 Ω
50 Ω
Switch
Figure 12. Switch Off Isolation
14
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Parameter Measurement Information (continued)
Network Analyzer
50 Ω
Source
Signal
V MICP
VSLEEVE_ SENSE
VGND _SENSE
VRING2_ SENSE
Switches
50 Ω
50 Ω
50 Ω
Figure 13. Channel Separation
Audio Analyzer
600 Ω
V MICP
VSLEEVE_ SENSE/RING2_ SENSE
Source
Signal
Switch
600 Ω
Figure 14. Total Harmonic Distortion (THD) and SNR
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Parameter Measurement Information (continued)
V MICP/GND _SENSE
VTEST
RL
SDA
CL
Digital
Core
SCL
SCL
VTEST
VTEST
tON
90
%
tOFF
10
%
Figure 15. S3 tOFF/tON
VPU
R PU
VTEST
CL
SDA
Digital
Core
SCL
SCL
VTEST
VTEST
tOFF
70
%
tON
30
%
Figure 16. S1, S2, GNDFET and DFET tON/tOFF
16
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9 Detailed Description
9.1 Overview
The TS3A227E is an autonomous audio accessory switch with adjustable de-bounce settings, ultra-low RON
ground FETs, depletion FETs and manual I2C control.
The detection sequence is initiated via the external DET_TRIGGER pin or via I2C command. The device
incorporates internal de-bounce timings that remove the need for external RC circuits, reducing cost and overall
PCB footprint. Additionally all switches of the TS3A227E and the internal de-bounce timings can be controlled
through I2C.
Before an insertion, TS3A227E isolates the MICBIAS voltage output from the audio jack to remove click/pop
noise that can be created during an insertion event. In addition the device also includes depletion FETs to
ground the accessory SLEEVE and RING2 pins when VDD is not powered. This removes the humming noise
that can be created when plugging an accessory into and unpowered system.
The TS3A227E detects the presence and configuration of the microphone in an attached headset upon insertion.
Upon detection of a microphone the TS3A227E automatically connects a system analog microphone pin (MICP)
to the appropriate audio jack connection. The device also automatically routes the device GNDA pin to the
headset ground. After a 4-pole headset insertion the host can enable the Key Press detection feature of the
TS3A227E.
The device also features an ultra-low power sleep mode to conserve battery life when an accessory is not
inserted.
For FM transmission the ground FETs of the device can be used as an FM transmission path by placing the FM
receiver and matching network on the GNDA pin. The FM support bit must be set to ‘1’ through I2C for FM
transmission to pass.
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9.2 Functional Block Diagram
BATTERY
AUDIO
AMPLIFIER
VDD
TS3A227 E
MIC_PRESENT
SCL
Digital interface
control
DIGITAL BASEBAND
SDA
TIP
Detection
Circuitry
EMI
FILTER
DET_TRIGGER
INTB
RING2_SENSE
ESD Protection
MICP
MICROPHONE
AMPLIFIER
Mic Switch
Matrix
GND _SENSE
SLEEVE _SENSE
EMI
FILTER
RING2
SLEEVE
S1 and S2
GND Switch
Matrix
Depletion FETs
GND
GNDA
FM
Receiver
18
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9.3 Feature Description
9.3.1 Accessory Configuration Detection
There are currently two difference configurations for headsets with microphones as shown in Table 1. Many
codecs requires that the system designer make a tough decision via a hardware connection which headset they
would like to support. This is done by directly connecting the microphone bias and the ground connections to the
sleeve and ring2 pins of the audio jack. For the end user this leaves a headset standard as fully unsupported.
Table 1. Two Difference Configurations for Headsets
PHYSICAL CONNECTOR
Tip
Ring
INTERNAL IMPEDANCE NETWORK
Sleeve
Tip
L
R
G
Ring
TRS
16-2 kΩ
600-4kΩ
L
Ring1
Ring2
Sleeve
Audio Left
Audio Right
Ground
16-2 kΩ
3-pole TRS
Tip
PIN NAME CONFIGURATION
R
G
Tip
Audio Right
Ring2
Ground
Sleeve
Microphone
M
Sleeve
16-2 kΩ
Audio Left
Ring1
Standard
16-2 kΩ
600-4kΩ
Tip
4-pole TRRS
L
R
M
16-2 kΩ
Audio Left
Ring1
Audio Right
Ring2
Microphone
Sleeve
Ground
G
OMTP
16-2 kΩ
The TS3A227E fills this system gap by detecting the presence and location of the microphone and automatically
routing the MICBIAS and ground lines to support each headset. This enhances the overall user experience by
allowing headsets from all manufacturers.
9.3.2 Optional Manual I2C Control
The TS3227E also features optional manual I2C control for enhanced system flexibility. This allows the system
designer to manually control the switches and de-bounce settings at their discretion enabling the TS3A227E to
adapt to unique use cases.
This is an optional feature that does not need to be used for the device to operate autonomously.
9.3.3 Adjustable De-bounce Timings
The TS3A227E features manual control of the insertion de-bounce timer with selectable values. The default
insertion de-bounce timer is 90 ms.
This eliminates the need for external RC components which reduces BOM cost, the PCB footprint of the external
RC components. Further information on how to select an appropriate de-bounce timer can be found in the
application and implementation section.
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9.3.4 Key Press Detection
After a headset is inserted, the host can enable Key Press detection through the I2C registers. This will configure
the TS3A227E to detect up to 4 different keys and report when the key is pressed and released.
9.3.5 Click Pop Noise Reduction
During an accessory insertion and removal event the TS3A227E use special techniques to remove the click/pop
noise that can occur with a traditional implementation creating a better user experience.
9.3.6 Power off Noise Removal
In a system that intends to support both headset types, the end user can place the system into sleep mode and
leave a headset/speaker plugged into the audio jack. If the audio jack switch is turned off to conserve power in
the sleep mode this would typically mean the headset/speaker ground would not be connected because there is
no power to turn on the ground FETs. This creates an audible humming noise at the speaker/headset output that
can be discomforting to listen to.
By utilizing always on depletion FETs this issue can be removed and the headset/speaker can be connected to
ground even with the device unpowered.
9.3.7 Sleep Mode
The TS3A227E will automatically enter a low power sleep when no accessory is inserted and manual switch
control is not enabled. After an accessory is inserted the device will wake, run detection, and configure the
switches as necessary.
9.3.8 Codec Sense Line
In the complex systems of today, there is an increasing amount of ICs on any given board. The issue this creates
is that a codec can be far away from the audio jack and there is a potential difference between the grounding of
the codec and the grounding of the headset.
By incorporating a ground sense line into the TS3A227E the codec can compensate for this offset and create a
higher quality audio experience.
9.3.9 FM Support
FM can be picked up using the headset ground line and passed through the ground FETs of the TS3A227E. By
having a bandwidth of 200 MHz the full FM band can be passed through these FETs to a FM matching network
and the FM receiver.
9.4 Device Functional Modes
9.4.1 Sleep Mode
The device will realize a sleep mode of 1 µA if the following are true:
• No accessory is inserted
• Manual Switch Control = ‘0’
The TS3A227E will respond to I2C communication and insertion events while in sleep mode. The user can set
the de-bounce settings and device configuration as desired while in the sleep mode. If the user sets the Manual
Switch Control bit to ‘1’ the device will turn on all blocks and come out of sleep mode.
If there is no accessory inserted and the users exits manual switch control, the switches will revert to the noinsertion state and all unnecessary blocks of the TS3A227E will turn off and enter the sleep mode.
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Device Functional Modes (continued)
9.4.2 Manual Switch Control
The TS3A227E supports manual switch control that can be utilized by setting Bit6 of the Device Settings 1
register to ‘1’.
Key operational characteristics of manual switch control are below.
1. Enabling the manual switch control does not disable automatic insertion and accessory type detection.
2. Manual Switch Control is blocked during accessory type detection which includes an automatic detection
sequence or a manual SW triggered detection sequence. Any changes to the switch control registers, or
setting the device to manual switch control will not update the switches until after the accessory type
detection has completed.
3. Manual Switch Control is also blocked during de-bounce periods.
4. Excluding items 2 and 3 above, immediately after the system enables manual switch control the switch states
will change to reflect the switch control registers. It is advised to set the desired state of the switches before
enabling manual switch control.
5. Turning off the depletion FETs of the device will result in increased power consumption as defined in the
electrical characteristics table.
6. Immediately upon setting Manual Switch Control = ‘0’ the device will automatically configure the switches to
the latest detection state. If an accessory is inserted but the TS3A227E has not run detection due to
Auto_Det_EN = ‘0’, the switch status will revert to the no insertion state.
7. The device cannot be in sleep mode and utilize manual switch control at the same time.
9.4.3 Manual Switch Control Use Cases
The table below captures what occurs after a 3-pole insertion with the Manual Switch Control, Auto DET Enable,
and DET Trigger bits set to the following before an insertion.
MANUAL
SWITCH
CONTROL
AUTO DET
EN
DET TRIGGER
(SW)
DOES TYPE
DETECTION
RUN
0
0
0
no
No-insertion
0
0
0
1
yes
3-pole config
0
0
1
0
yes
3-pole config
0
0
1
1
yes
3-pole config
0
1
0
0
no
Switch control registers
0
1
0
1
yes
Switch control registers
0
1
1
0
yes
Switch control registers
0
1
1
1
yes
Switch control registers
0
SWITCH STATUS AFTER
INSERTION
DET TRIGGER (SW) AFTER
INSERTION
The table below captures the switch and relevant register outputs for sequence 1.
EVENT
NO.
EVENT DESCRIPTION
SWITCH STATUS
3-POLE
BIT
4-POLE
STANDARD BIT
4-POLE
OMTP BIT
1
Device powers up
No-insertion
0
0
0
2
User sets Auto DET Enable = ‘0’
No-insertion
0
0
0
3
3-pole accessory is inserted
No-insertion
0
0
0
4
System sets Manual Switch Control = ‘1’
System controlled
0
0
0
5
System sets switch control registers = 0xFF
System controlled
0
0
0
6
System sets Manual Switch Control = ‘0’
No-insertion
0
0
0
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In sequence 1 at event 3 the switch status does not change because the system set the Auto DET Enable = ‘0’.
When the accessory is inserted we will not run detection and not change the switches because of this.
At event 6 the system turns off manual switch control, the switch state reverts back to the No-insertion state
because the TS3A227E has not ran detection.
The table below captures the switch and relevant register outputs for sequence 2.
EVENT
NO.
SWITCH STATUS
AFTER EVENT
EVENT DESCRIPTION
3-POLE
BIT
4-POLE
STANDARD BIT
4-POLE
OMTP BIT
1
Device powers up
No-insertion
0
0
0
2
User sets Auto DET Enable = ‘0’
No-insertion
0
0
0
3
3-pole accessory is inserted
No-insertion
0
0
0
4
System sets Manual Switch Control = ‘1’
System controlled
0
0
0
5
System sets switch control registers = 0xFF
System controlled
0
0
0
6
System sets DET Trigger = ‘1’
System controlled
1
0
0
7
System sets Manual Switch Control = '0'
3-pole configuration
1
0
0
In sequence 2 at event 3 the switch status does not change because the system set the Auto DET Enable = ‘0’.
When the accessory is inserted we will not run detection and not change the switches because of this.
At event 6 the system turns triggers a manual type detection and the TS3A227E detects a 3-pole accessory. The
switch state will remain in the system controlled state.
At event 7 the system exits manual switch control. The switch status will then change back to the last detection
state. Because detection was ran at event 6 and a 3-pole was detected, the switch state will reflect that of the 3pole switch configuration.
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9.4.4 FM Support Mode
FM support mode needs to be entered via I2C through the Device Settings register. This will turn off the
depletion switches when an accessory is inserted, eliminating the extra ground path. The ground line of the
headset/headphone is used for FM transmission. This signal must pass through the TS3A227E ground FETs as
shown in Figure 17 where the red line indicates the transmission path.
TS3 A227E
S3 PR
RING 2_SENSE
MICP
S 3PS
Audio Jack
S3GS
SLEEVE _SENSE
GND_SENSE
L
R
G
M
S3GR
RING2
SLEEVE
S1
S2
RING2
GNDFET
GND
SLEEVE
GNDFET
RING2
DFET
GNDA
SLEEVE
DFET
GND
FM
Receiver
Figure 17. FM Support Transmission Path
NOTE
FM support should be enabled before an accessory is inserted. Toggling the FM
support bit after a headset is inserted can cause a pop noise to be heard by the end
user.
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9.5 Register Maps
The I2C address of the TS3A227E is b’0111011X or 77h read and 76h write.
Addr
(xxh)
Name
Type
Reset
Bit7
Bit6
Bit5
Bit4
Bit3
00h
Device ID
R
11h
0
0
0
1
0
01h
Interrupt
02h
Key Press
Interrupts
R
00h
R
00h
03h
Interrupt Disable
R/W
08h
04h
Device Settings
R/W
23h
05h
Device Setting 1
R/W
00h
Key 4 Press
Reset
Manual Switch
Control
R/W
0Eh
Reserved
07h
Switch Control 1
R/W
00h
Reserved
08h
Switch Control 2
R/W
00h
Switch Status 1
R
0Ch
Switch Status 2
R
00h
0Bh
Accessory
Status
0Ch
0Dh
Auto DET
Enable
DET Trigger
0
1
DC
Ins/Rem Event
Key 2 Release
Key 2 Press
Key 1 Release
Key 1 Press
INT Disable
ADC
Conversion
INT Disable
DC INT
Disable
Ins/Rem Event
INT Disable
FM Support
Insertion De-bounce Time
Key Press
Enable
Key Release
De-bounce
MICBIAS Setting
Raw Data En
ADC Trigger
Key Press De-bounce
RING2
GNDFET
SLEEVE
DFET
RING2 DFET
Switch 2
Switch 1
S3PS
S3PR
S3GS
S3GR
RING2
GNDFET
SLEEVE
DFET
RING2 DFET
Switch 2
Switch 1
Reserved
S3PS
S3PR
S3GS
S3GR
Reserved
Insertion
Status
4-Pole
Standard
4-pole OMTP
3-pole
SLEEVE
GNDFET
Reserved
Reserved
Bit0
0
Reserved
Device Setting 2
09h
Key 3 Press
Reserved
06h
0Ah
Key 3 Release
Bit1
ADC
Conversion
Reserved
Key 4
Release
Bit2
SLEEVE
GNDFET
R
00h
ADC Output
R
00h
ADC
Threshold 1
R/W
20h
KP Threshold 1
0Eh
Threshold 2
R/W
40h
KP Threshold 2
0Fh
Threshold 3
R/W
68h
KP Threshold 3
Interrupt and Key Press Interrupt register notes:
• The device will continue to automatically run type detection and key press detection even if the host has not
serviced the interrupts.
• Consecutive reads of an interrupt register at 400 kHz will not allow time for the internal registers to clear and
will appear. The internal digital core requires 200 µs to clear the register after it has been read.
9.6 Register Field Descriptions
9.6.1 Device ID Register Field Descriptions (Address 00h)
Figure 18. Device ID Register Field Descriptions (Address 00h)
Bit
7-0
24
Field
Device ID
Type
R
Reset
11h
Description
Unique Revision number
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9.6.2 Interrupt Register Field Descriptions (Address 01h)
Table 2. Interrupt Register Field Descriptions (Address 01h)
Bit
Field
Type
Reset
7-3
Reserved
R
0h
ADC Conversion
R
0h
2
Description
ADC Conversion complete Interrupt. Flagged after a manual ADC conversion is
complete.
Interrupt bit is cleared after being read through I2C or after a removal event.
0h = Default state
1h = ADC Conversion Complete
1
DC
R
0h
Detection Complete interrupt. Flagged after detection is completed for an
insertion sequence. This bit is also flagged after completion of a manually
triggered detection.
Interrupt bit is cleared after being read through I2C or after a removal event.
0h = Default state
1h = Detection Completed
0
Ins/Rem Event
R
0h
Insertion or removal interrupt indicator. This bit is set if there is an insertion or
removal event. The Insertion status bit of the Accessory Status register (0Bh)
must be checked if this bit is set.
Interrupt bit is cleared after being read through I2C
0h = Default state
1h = Accessory has been inserted or removed
9.6.3 Key Press Interrupt Register Field Descriptions (Address 02h)
Table 3. Key Press Interrupt Register Field Descriptions (Address 02h)
Bit
7
Field
Type
Reset
Description
Key 4 Release
R
0h
This interrupt bit is set after the user has released key 4 on the accessory for a
duration longer than the Key Release De-bounce timer.
This bit will auto-clear on the following conditions:
● Host reads the register through I2C
● The KP Enable bit is set to ‘0’
— The KP Enable bit is set to ‘0’ automatically after a removal
● The Key 4 press bit is set ot '1'
0h = Default State
1h = Key 4 was released
6
Key 4 Press
R
0h
This interrupt bit is set after the user has pressed key 4 on the accessory for a
duration longer than the Key Press De-bounce timer.
This bit will auto-clear on the following conditions:
● Host reads the register through I2C
● The KP Enable bit is set to ‘0’
— The KP Enable bit is set to ‘0’ automatically after a removal
0h = Default State
1h = Key 4 was released
5
Key 3 Release
R
0h
This interrupt bit is set after the user has pressed Key 3 on the accessory for a
duration longer than the Key Release De-bounce timer.
This bit will auto-clear on the following conditions:
● Host reads the register through I2C
● The KP Enable bit is set to ‘0’
— The KP Enable bit is set to ‘0’ automatically after a removal
● The Key 3 Press bit is set to ‘1’
0h = Default State
1h = Key 3 was released
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Table 3. Key Press Interrupt Register Field Descriptions (Address 02h) (continued)
Bit
4
Field
Type
Reset
Description
Key 3 Press
R
0h
This interrupt bit is set after the user has pressed Key 3 on the accessory for a
duration longer than the Key Press De-bounce timer.
This bit will auto-clear on the following conditions:
● Host reads the register through I2C
● The KP Enable bit is set to ‘0’
— The KP Enable bit is set to ‘0’ automatically after a removal
0h = Default State
1h = Key 3 was released
3
Key 2 Release
R
0h
This interrupt bit is set after the user has pressed Key 2 on the accessory for a
duration longer than the Key Release De-bounce timer.
This bit will auto-clear on the following conditions:
● Host reads the register through I2C
● The KP Enable bit is set to ‘0’
— The KP Enable bit is set to ‘0’ automatically after a removal
● The Key 2 Press bit is set to ‘1’
0h = Default State
1h = Key 2 was released
2
Key 2 Press
R
0h
This interrupt bit is set after the user has pressed Key 2 on the accessory for a
duration longer than the Key Press De-bounce timer.
This bit will auto-clear on the following conditions:
● Host reads the register through I2C
● The KP Enable bit is set to ‘0’
— The KP Enable bit is set to ‘0’ automatically after a removal
0h = Default State
1h = Key 2 was released
1
Key 1 Release
R
0h
This interrupt bit is set after the user has pressed Key 1 on the accessory for a
duration longer than the Key Release De-bounce timer. This bit is used for raw
data release events.
This bit will auto-clear on the following conditions:
● Host reads the register through I2C
● The KP Enable bit is set to ‘0’
— The KP Enable bit is set to ‘0’ automatically after a removal
● The Key 1 Press bit is set to ‘1’
0h = Default State
1h = Key 1 was released
0
Key 1 Press
R
0h
This interrupt bit is set after the user has pressed Key 1 on the accessory for a
duration longer than the Key Press De-bounce timer. This bit is used for raw data
press events.
This bit will auto-clear on the following conditions:
● Host reads the register through I2C
● The KP Enable bit is set to ‘0’
— The KP Enable bit is set to ‘0’ automatically after a removal
0h = Default State
1h = Key 1 was released
26
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9.6.4 Interrupt Disable Register Field Descriptions (Address 03h)
Table 4. Interrupt Disable Register Field Descriptions (Address 03h)
Bit
Field
Type
Reset
Description
7-3
Reserved
R
0h
+3
INT Disable
R/W
1h
Enables or disables all interrupts. Disabling the interrupts will cause the INT to
not assert but the bits will still populate.
0h = interrupts are enabled
1h = interrupts are disabled
2
ADC Conversion
INT Disable
R/W
0h
Enables or disables the ADC conversion interrupt. Disabling the interrupt will
cause INT to not assert but the interrupt bit will still be set .
In the use case that this bit is == ‘1’ and a key is pressed, the Key Press
interrupt will still assert the INT pin. If the host issues a software ADC trigger
after the key has been pressed, the interrupt will not assert as that ADC
conversion is the only interrupt present.
0h = ADC Conversion interrupt is enabled
1h = ADC Conversion interrupt is disabled
1
DC INT Disable
R/W
0h
Enables or disables the DC interrupt. Disabling the interrupt will cause INT to
not assert but the interrupt bit will still be set.
0h = DC interrupt is enabled
1h = DC interrupt is disabled
0
Ins/Rem Event INT R/W
Disable
0h
Enables or disables the Ins/Rem Event interrupt. Disabling the interrupt will
cause INT to not assert but the interrupt bit will still be set.
0h = Ins/Rem Event interrupt is enabled
1h = Ins/Rem Event interrupt is disabled
9.6.5 Device Settings Field Descriptions (Address 04h)
Table 5. Device Settings Field Descriptions (Address 04h)
Bit
Field
Type
Reset
Description
7
Reset
R/W
0h
Initiates software reset of the TS3A227E. This will interrupt any on-going
operation internal to the device.
0h = Default state
1h = Initiates a reset
6
Manual Switch
Control
R/W
0h
Enables Manual control of the TS3A227E switches. After enabling manual switch
control the switch status will immediately reflect the values in the switch control
registers provided accessory type.
0h = Manual switch control disabled
1h = Manual switch control enabled
5
Auto DET Enable
R/W
1h
Controls whether detection is automatically ran after an insertion.
0h = Auto accessory detection is disabled
1h = Auto accessory detection is enabled
4
DET Trigger
R/W
0h
Manually triggers detection. This bit is auto cleared after detection is completed.
A DET Trigger request will be ignored in the following cases:
● A detection event is currently being service.
● The interrupt register is not cleared (Register 02h must be = 00h)
● There is no accessory inserted (/DET_TRIGGER is high)
0h = Default value
1h = Manually trigger detection
3
FM Support
R/W
0h
Turns on FM support. This will turn off the depletion FETs if any accessory is
inserted allowing FM transmission through the ground FETs at the cost of
increased current consumption.
0h = FM not supported and depletion FETs are on after an insertion
1h = FM supported and depletion FETs are off after an insertion
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Table 5. Device Settings Field Descriptions (Address 04h) (continued)
Bit
Field
Type
Reset
Description
2.0
Insertion De-bounce
Time
R/W
3h
Controls the insertion de-bounce timer. Values below are typical values that have
±30% variation. Values in addition have a ±1 ms variation though this will only
really affect the 2 ms timer.
0h = 2 ms
1h = 30 ms
2h = 60 ms
3h = 90 ms
4h = 120 ms
5h = 150 ms
6h = 1 s
7h = 2 s
9.6.6 Key Press Settings 1 Field Descriptions (Address 05h)
Table 6. Device Settings 1 Field Descriptions (Address 05h)
Bit
Field
Type
Reset
7-3
Reserved
R
0h
Key Press Enable
R/W
0h
2
Description
Enables the Key Press detection of the TSA227E. This bit auto clears after a
removal event.
If the Key Press Enable bit is set ‘1’ and the Manual Switch Control bit is set to
‘1’, the S3 matrix must be in one of the two correct position as described in the
Key Press Detection section for the TS3A227E to run key press detection.
0h = Default state
1h = Enables Key Press detection
1
Raw Data En
R/W
0h
Enables the Raw data mode for Key Press Detection. This bit auto clears if the
Key Press Enable bit is set to ‘0’.
Enabling raw data mode will not clear the KP interrupt register. After enabling
Raw Data any key press and release event is recorded using the Key 1 Press
and Key 2 Press Release event. The ADC conversion will be recorded in the
ADC output register.
0h = Raw Data is not enabled
1h = Raw Data is enabled
0
ADC Trigger
R/W
0h
Causes a manual ADC trigger if the Key Press Enable and Raw Data EN bits are
both set to ‘1’. After the ADC conversion is complete the ADC Conversion
interrupt will be set and the ADC Output register will be populated.
This bit auto clears after the ADC Conversion is complete. A new ADC
Conversion can be initiated even if the ADC Conversion interrupt has not been
serviced.
0h = Default State
1h = Triggers ADC conversion
28
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9.6.7 Key Press Settings 2 Field Descriptions (Address 06h)
Table 7. Device Settings 2 Field Descriptions (Address 06h)
Bit
Field
Type
Reset
7-6
Reserved
R
0h
5-3
MICBIAS Setting
R/W
1h
Description
This controls the key press threshold. Set this setting closest to the intended
MICBIAS voltage
0h
1h
2h
3h
4h
5h
6h
7h
2
Key Release Debounce
R/W
1h
= 2.1 V
= 2.2 V (Default)
= 2.3 V
= 2.4 V
= 2.5 V
= 2.6 V
= 2.7 V
= 2.8 V
Controls the Key-Release de-bounce timer. Values below are typical values that
have ±30% variation. Values in addition have a ±1 ms variation though this will
only really affect the 2 ms timer.
0h = 2 ms
1h = 20 ms (Default)
1-0
Key Press Debounce
R/W
2h
Controls the key press de-bounce timer. Values below are typical values that
have ±30% variation. Values in addition have a ±1 ms variation though this will
only really affect the 2 ms timer.
0h
1h
2h
3h
= 2 ms
= 40 ms
= 80 ms (Default)
= 120 ms
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9.6.8 Switch Control 1 Field Descriptions (Address 07h)
Table 8. Switch Control 1 Field Descriptions (Address 07h)
Bit
Field
Type
Reset
7-6
Description
Reserved
R
0h
5
SLEEVE GNDFET
R/W
0h
Configures the state of the SLEEVE GNDFET if manual switch control is enabled.
If manual switch control is not enabled this bit is ignored.
0h = SLEEVE GNDFET switch off
1h = SLEEVE GNDFET switch on
4
RING2 DFET
R/W
0h
Configures the state of the RING2 GNDFET if manual switch control is enabled. If
manual switch control is not enabled this bit is ignored.
0h = RING2 GNDFET switch off
1h = RING2 GNDFET switch on
3
SLEEVE DFET
R/W
0h
Configures the state of the SLEEVE DFET if manual switch control is enabled. If
manual switch control is not enabled this bit is ignored.
0h = SLEEVE DFET switch off
1h = SLEEVE DFET switch on
2
RING2 DFET
R/W
0h
Configures the state of the RING2 DFET if manual switch control is enabled. If
manual switch control is not enabled this bit is ignored.
0h = RING2 DFET switch off
1h = RING2 DFET switch on
1
Switch 2
R/W
0h
Configures the state of the Switch 2 if manual switch control is enabled. If manual
switch control is not enabled this bit is ignored.
0h = Switch 2 off
1h = Switch 2 on
0
Switch 1
R/W
0h
Configures the state of the Switch 1 if manual switch control is enabled. If manual
switch control is not enabled this bit is ignored.
0h = Switch 1 off
1h = Switch 1 on
9.6.9 Switch Control 2 Field Descriptions (Address 08h)
Table 9. Switch Control 2 Field Descriptions (Address 08h)
30
Bit
Field
Type
Reset
7-4
Reserved
R
0h
Description
3
S3PS
R/W
0h
Configures the state of the S3PS if manual switch control is enabled. If manual
switch control is not enabled this bit is ignored.
0h = S3PS switch off
1h = S3PS switch on
2
S3PR
R/W
0h
Configures the state of the S3PR if manual switch control is enabled. If manual
switch control is not enabled this bit is ignored.
0h = S3PR switch off
1h = S3PR switch on
1
S3GS
R/W
0h
Configures the state of the S3GS if manual switch control is enabled. If manual
switch control is not enabled this bit is ignored.
0h = S3GS off
1h = S3GS on
0
S3GR
R/W
0h
Configures the state of the S3GR if manual switch control is enabled. If manual
switch control is not enabled this bit is ignored.
0h = S3GR off
1h = S3GR on
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9.6.10 Switch Status 1 Field Descriptions (Address 09h)
Table 10. Switch Status 1 Field Descriptions (Address 09h)
Bit
Field
Type
Reset
7-6
Description
Reserved
R
0h
5
SLEEVE GNDFET
R
0h
Indicates the status of SLEEVE GNDFET
0h = SLEEVE GNDFET switch is off
1h = SLEEVE GNDFET switch is on
4
RING2 GNDFET
R
0h
Indicates the status of RING2 GNDFET
0h = RING2 GNDFET switch is off
1h = RING2 GNDFET switch is on
3
SLEEVE DFET
R
1h
Indicates the status of SLEEVE DFET
0h = SLEEVE DFET switch is off
1h = SLEEVE DFET switch is on
2
RING2 DFET
R
1h
Indicates the status of RING2 DFET
0h = RING2 DFET switch is off
1h = RING2 DFET switch is on
1
Switch 2
R
0h
Indicates the status of Switch 2
0h = Switch 2 is off
1h = Switch 2 is on
0
Switch 1
R
0h
Indicates the status of Switch 1
0h = Switch 1 is off
1h = Switch 1 is on
9.6.11 Switch Status 2 Field Descriptions (Address 0Ah)
Table 11. Switch Status 2 Field Descriptions (Address 0Ah)
Bit
Field
Type
Reset
7-4
Reserved
R
0h
Description
3
S3PS
R
0h
Indicates the status of S3PS
0h = S3PS switch is off
1h = S3PS switch is on
2
S3PR
R
0h
Indicates the status of S3PR
0h = S3PR switch is off
1h = S3PR switch is on
1
S3GS
R
0h
Indicates the status of S3GS
0h = S3GS is off
1h = S3GS is on
0
S3GR
R
0h
Indicates the status of S3GR
0h = S3GR is off
1h = S3GR is on
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9.6.12 Detection Results Field Descriptions (Address 0Bh)
Table 12. Detection Results Field Descriptions (Address 0Bh)
Bit
Field
Type
Reset
7-4
Description
Reserved
R
0h
3
Insertion Status
R
0h
Indicates if an accessory is inserted the jack or not. This bit is set to the
corresponding state after an accessory is inserted or removed and should be
read after the Ins/Rem Event interrupt has been set to ‘1’.
0h = An accessory is not in the jack
1h = An accessory is in the jack
2
4-pole Standard
R
0h
Indicates if a 4-pole Standard headset is detected. Bit is set after a completed
detection sequence.
0h = Default state
1h = 4-pole standard headset detected
1
4-pole OMTP
R
0h
Indicates if a 4-pole OMTP headset is detected. Bit is set after a completed
detection sequence.
0h = Default state
1h = 4-pole OMTP headset detected
0
3-pole
R
0h
Indicates if a 3-pole headphone is detected. Bit is set after a completed
detection sequence.
0h = Default state
1h = 3-pole headphone detected
9.6.13 ADC Output Field Descriptions (Address 0Ch)
Table 13. ADC Output Field Descriptions (Address 0Ch)
Bit
Field
Type
Reset
Description
7-1
ADC
R/W
00h
This field contains the output of the key press detection ADC as described in
the key press detection register
Reserved
R
0h
0
9.6.14 Threshold 1 Field Descriptions (Address 0Dh)
Table 14. Threshold 1 Field Descriptions (Address 0Dh)
Bit
7-01
0
Field
Type
Reset
Description
KP Threshold 1
R/W
20h
This field sets the key 1 and key 2 boundary threshold. This value must always
be lower than the Threshold 2 register for proper operation.
Reserved
R
0h
9.6.15 Threshold 2 Field Descriptions (Address 0Eh)
Table 15. Threshold 2 Field Descriptions (Address 0Eh)
Bit
Field
Type
Reset
Description
7-1
KP Threshold 2
R/W
40h
This field sets the key 2 and key 3 boundary threshold. This value must
always be lower than the Threshold 3 register and higher than the threshold 2
register for proper operation.
Reserved
R
0h
0
9.6.16 Threshold 3 Field Descriptions (Address 0Fh)
Table 16. Threshold 3 Field Descriptions (Address 0Fh)
Bit
Field
Type
Reset
Description
7-1
KP Threshold 3
R/W
68h
This field sets the key 3 and key 4 boundary threshold. This value must
always be higher than the Threshold 2 register for proper operation.
Reserved
R
0h
0
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10 Application and Implementation
10.1 Application Information
Figure 19 shows how a standard application schematic for the TS3A227E. The DSBGA package pin connections
will be the same except for the lack of thermal pad. The following sections discuss how the TS3A227E works
with different headsets and how the key press detection operates.
10.2 Typical Application
3.3 V
C1
C2
R4
R3
R5
R2
R1
4
15
VDD
Application
Processor
DET _TRIGGER
16
14
TIP
MIC_PRESENT
9
7
SCL
RING 2_SENSE
SDA
SLEEVE _SENSE
3
MICBIAS
MICI
8
13
C3
12
INT
R6
RING2
6
10
MICP
GND _SENSE
SLEEVE
5
11
GND _SENSE
GNDA
1
C4
FM Network
2
GND
GND
L1
TS3A227ERVAR
Figure 19. Typical Application Schematic
Table 17. Component List
COMPONENT
VALUE
NOTES
R1
4.7 kΩ
Pullup resistor must be sized to not exceed max IOL specification for INT pin
R2
4.7 kΩ
Pullup resistor must be sized to not exceed max IOL specification for INT pin
R3
4.7 kΩ
Pullup resistor must be sized to not exceed max IOL specification for INT pin
R4
4.7 kΩ
Pullup resistor must be sized to not exceed max IOL specification for INT pin
R5
10 kΩ
Pulldown resistor for high to low transition on DET_TRIGGER
R6
2.2 kΩ ±1%
MICBIAS pullup resistor must be ±1% for Key Press Detection to function properly
C1
10 µF
De-coupling capacitor for VDD
C2
100 nF
De-coupling capacitor for VDD
C3
1 µF
Value can vary depending on codec needs
C4
47 nF
Value can vary depending on FM matching network needs. If FM transmission is not being
supported by the application this capacitor is not needed
L1
180 nF
Value can vary depending on FM matching network needs. If FM transmission is not being
supported by the application this inductor is not needed and GNDA must be shorted to GND
10.2.1 Design Requirements
10.2.1.1 Standard I2C Interface Details
The bi-directional I2C bus consists of the serial clock (SCL) and serial data (SDA) lines. Both lines must be
connected to a positive supply via a pull-up resistor when connected to the output stages of a device. Data
transfer may be initiated only when the bus is not busy.
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I2C communication with this device is initiated by the master sending a START condition, a high-to-low transition
on the SDA line while the SCL line is high. After the start condition, the device address byte is send, MSB first,
including the data direction bit (R/W). This device does not respond to the general call address. After receiving
the valid address byte (0x77 read, 0x76 write), this device responds with an ACK, a low on the SDA line during
the high of the ACK-related clock pulse.
The data byte follows the address ACK. The R/W bit is kept low for transfer from the master to the slave. The
data byte is followed by an ACK sent from this device. Data are output only if complete bytes are received and
acknowledged. The output data is valid at time (tpv) after the low-to-high transition of SCL, during the clock cycle
for the ACK.
On the I2C bus, only one data bit is transferred during each clock pulse. The data on the SDA line must remain
stable during the high pulse of the clock period, as changes in the data line at this time are interpreted as control
commands (START or STOP).
A Stop condition, a low-to-high transition on the SDA line while the SCL line is high, is sent by the master. The
number of data bytes transferred between the start and the stop conditions from the transmitter to receiver is not
limited. Each byte of eight bits is followed by one ACK bit. The transmitter must release the SDA line before the
receiver can send an ACK bit.
A slave receiver that is addressed must generate an ACK after the reception of each byte. The device that
acknowledges has to pull down the SDA line during the ACK clock pulse so that the SDA line is stable low during
the high pulse of the ACK-related clock period. Setup and fold times must be taken into account.
Start
Condition
Clock pulse for
acknowledgment
ST
SCL
1
2
8
9
SDA Output
by
Transmitter
NACK
SDA Output
by Receiver
ACK
2
Figure 20. Acknowledgment on the I C Bus
10.2.1.2 Write Operations
Data is transmitted to the TS3A227E by send the device salve address and setting the LSB to a logic 0. The
command byte is sent after the address and determines which register receives the data that follows the
command byte. The next byte is written to the specified register on the rising edge of the ACK clock pulse. See
Figure 2 and Figure 3 for different modes of write operations.
Slave Address
ST
START
A6
A5
A4
A3
A2
Sub Address
A1
A0
0
A
0
0
R/W
ACK From slave
0
0
0
Data Byte
0
0
0
A
D7
Register Address N
Auto Increment
D6
D5
D4
D3
Data Byte
D2
D1
D0
A
Data to Register N
ACK From slave
D7
D6
D5
D4
D3
D2
D1
D0
A
Data to Register N
ACK From slave
SP
STOP
ACK From slave
Figure 21. Repeated Data Write to a Single Register
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Figure 22. Burst Data Write to Multiple Registers
10.2.1.3 Read Operations
The bus master must send the TS3A227E slave address with the LSB set to logic 0. The command byte is sent
after the address and determines which register is accessed. After a restart, the device slave address is sent
again but this time the LSB is set to logic 1. Data from the register defined by the command byte then is sent
back to the host by the TS3A227E. Data is clicked into the SDA output shift register on the rising edge of the
ACK clock pulse. Figure 23 and Figure 24 show read operations that use a restart between the sub-address
write and the read operation. A Stop and start condition between the sub-address write and the read operation is
also acceptable.
Notes:
1. SDA is pulled low on ACK from the slave or master.
2. Register write always a require sub-address write before writing the first data.
3. Repeated data writes to a single register continue indefinitely until n I2C Stop or Re-start.
4. Repeated data reads from a single register continue indefinitely until an I2C NACK is received from the
master
5. Burst data writes start at the specified register address, then advance to the next register address, even
to the read-only registers and continue until the Stop or Re-start. For the read-only registers, data write
appears to occur, although the register contents are not changed by the write operations.
6. Burst data reads start at the specified register address, then advance to the next register address and
continues until an I2C NACK is received from the master.
Slave Address
ST
START
A6
A5
A4
A3
A2
Sub Address
A1
A0
0
A
0
0
0
R/W
ACK From slave
0
0
Slave Address
0
0
0
A
RS
A6
A5
A4
A3
A2
Data Byte
A1
A0
Re-start
ACK From slave
D6
D5
D4
D3
D7
D6
D5
D4
D3
D2
D1
D0
A
Data from Register N
ACK From slave
Data Byte
D7
A
R/W
Register Address N
Auto Increment
1
ACK From master
Data Byte
D2
D1
D0
A
Data from Register N
ACK From master
D7
D6
D5
D4
D3
D2
D1
D0
NA
Data from Register N
SP
Stop
NACK From master
Figure 23. Repeated Data Read From a Single Register
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Slave Address
ST
A6
A5
A4
A3
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Sub Address
A2
A1
A0
START
0
A
0
0
0
0
R/W
0
Slave Address
0
0
0
A
RS
A6
A5
A4
A3
A2
Data Byte
A1
A0
Auto Increment
Re-start
ACK From slave
D6
D5
D4
D3
D7
D6
D5
D4
D3
D2
D1
D0
A
Data from Register N
ACK From slave
Data Byte
D7
A
R/W
Register Address N
ACK From slave
1
ACK From master
Data Byte
D2
D1
D0
A
D7
D6
D5
Data from Register N
D4
D3
D2
D1
D0
NA
Data from Register N
ACK From master
SP
Stop
NACK From master
Figure 24. Burst Data Read From Multiple Registers
10.2.2 Detailed Design Procedure
10.2.2.1 Accessory Insertion
The TS3A227E monitors the DET_TRIGGER pin to determine when an insertion event occurs. A high to low
transition one the DET_TRIGGER pin will start the internal de-bounce timer (default 90 ms). This transition is
shown in Figure 19. Once the de-bounce timer has expired, it is determined that an accessory is inserted and the
detection algorithm is performed to determine what the accessory is and where the ground line is located.
Audio Jack
TS3A227 E
VDD
RING1
DET_TRIGGER
High to Low
TIP
L
R
?
?
S3PR
RING 2
MICP
S3PS
S 3GS
SLEEVE
GND_SENSE
S3 GR
S1
RING2
GNDFET
S2
GND
SLEEVE
GNDFET
GNDA
RING2
DFET
SLEEVE
DFET
GND
Figure 25. DET_TRIGGER Transition Diagram
Once a DET_TRIGGER transition has occurred, any I2C register changes will not be serviced until after the debounce and detection sequence have completed. If DET_TRIGGER transitions from Low to High before the debounce period has expired. The I2C register changes will be serviced before a new de-bounce timer is started
from another High to Low transition on the DET_TRIGGER pin. The I2C communication has to complete before
the next High to Low transition to take effect.
10.2.2.2 Audio Jack Selection
The audio jack the system uses plays a key role in how the system performs and the experience the end user
has with the equipment. In real-world scenarios a user might plug in the headset to the audio jack very slowly.
This creates a challenging case for the TS3A227E detection mechanism and detection error can occur if care is
not taken when designing the components around the TS3A227E.
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The main concern for slow plug-in is the detection process may have already started before the headset is fully
inserted into the jack. If the detection is running with the headset out of position, a false impedance
measurement may occur. For best performance a jack should be chosen that puts the detection mechanism on
the TIP pin at the end of physical jack to ensure that it is fully inserted.
The TS3A227E EVM contains test points for all the jack pins and can be blue wired to prototype audio jacks for
testing.
10.2.2.3 Switch Status
Table 18 depicts the switch status for each device configuration. A switch diagram is provided in Figure 26.
Table 18. Switch Status
RING2
SLEEVE
GNDFET GNDFET
RING2
DFET
SLEEVE
DFET
High-Z
On
On
High-Z
High-Z
High-Z
High-Z
On
On
On
On
Device State
S1
S2
S3PS
S3PR
S3GS
S3GR
Default State (No insertion
or VDD = 0 V)
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Detection running
High-Z
On
High-Z
High-Z
High-Z
High-Z
On
High-Z
High-Z
High-Z
On
On
3-pole
3-pole with FM support
On
High-Z
High-Z
High-Z
High-Z
On
On
High-Z
High-Z
High-Z
4-pole OMTP
High-Z
High-Z
High-Z
On
On
High-Z
High-Z
On
High-Z
On
4-pole OMTP with FM
support
High-Z
High-Z
High-Z
On
On
High-Z
High-Z
On
High-Z
High-Z
4-pole Standard
High-Z
High-Z
On
High-Z
High-Z
On
On
High-Z
On
High-Z
4-pole Standard with FM
support
High-Z
High-Z
On
High-Z
High-Z
On
On
High-Z
High-Z
High-Z
TS3 A227E
S3 PR
RING 2_SENSE
MICP
S 3PS
S3GS
SLEEVE _SENSE
GND_SENSE
S3GR
RING2
SLEEVE
S1
S2
RING2
GNDFET
GND
SLEEVE
GNDFET
GNDA
RING2
DFET
SLEEVE
DFET
GND
Figure 26. Switch Diagram
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10.2.2.3.1 Switch Status Diagrams
Closed switches are red in Figure 27 through Figure 31. The diagrams reflect switch states when manual switch
control is not enabled.
TS3 A227E
S3 PR
RING 2_SENSE
MICP
S 3PS
Audio Jack
S3GS
SLEEVE _SENSE
GND_SENSE
S3GR
RING2
SLEEVE
S1
S2
RING2
GNDFET
GND
SLEEVE
GNDFET
RING2
DFET
SLEEVE
DFET
GNDA
GND
Figure 27. Default Switch State With No Accessory Inserted
TS3 A227E
S3 PR
RING 2_SENSE
MICP
S 3PS
Audio Jack
S3GS
SLEEVE _SENSE
GND_SENSE
L
R
?
?
S3GR
RING2
SLEEVE
S1
S2
RING2
GNDFET
GND
SLEEVE
GNDFET
RING2
DFET
GNDA
SLEEVE
DFET
GND
Figure 28. Switch State During Detection
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TS3 A227E
S3 PR
RING 2_SENSE
MICP
S 3PS
Audio Jack
S3GS
SLEEVE _SENSE
GND_SENSE
L
R
G
S3GR
RING2
SLEEVE
S1
S2
RING2
GNDFET
GND
SLEEVE
GNDFET
RING2
DFET
SLEEVE
DFET
GNDA
GND
Figure 29. Switch State After Detecting a 3-Pole Headphone
TS3 A227E
S3PR
RING 2_SENSE
MICP
S3PS
Audio Jack
S3GS
SLEEVE _SENSE
GND_SENSE
L
R
M
G
S3GR
RING2
SLEEVE
S1
S2
RING2
GNDFET
GND
SLEEVE
GNDFET
RING2
DFET
GNDA
SLEEVE
DFET
GND
Figure 30. Switch State After Detection a 4-pole OMTP Headset
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S3PR
RING 2_SENSE
MICP
S3PS
Audio Jack
S3GS
SLEEVE _SENSE
GND_SENSE
L
R
G
M
S3GR
RING2
SLEEVE
S1
S2
RING2
GNDFET
GND
SLEEVE
GNDFET
RING2
DFET
GNDA
SLEEVE
DFET
GND
Figure 31. Switch State After Detecting a 4-Pole Standard Headset
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10.2.2.4 Key Press Detection
10.2.2.4.1 Key Press Thresholds
The TS3A227E features the ability to adjust the key press thresholds on the fly. The default key press bins are
shown below with the default values of the threshold registers optimized to detect these keys. The values for the
bins represent the equivalent resistance of the key being pressed with the microphone in parallel. Any equivalent
resistance outside these bins is not guaranteed to be detected correctly.
KEY
TYPICAL RESISTANCE
EQUIVALENT RESISTANCE RANGE
Key 1
50 Ω
0 Ω – 66 Ω
Key 2
135 Ω
126 Ω – 156 Ω
Key 3
240 Ω
228 Ω – 264 Ω
Key 4
470 Ω
360 Ω – 680 Ω
The Threshold 1 register (Address 0Dh) adjusts the detection boundary between Key 1 and Key2. The Threshold
2 register (Address 0Eh) adjusts the detection boundary between Key 2 and Key 3. The Threshold 3 register
(Address 0Fh adjusts the detection boundary between Key 3 and Key4.
The thresholds are 7 bit values that can be adjusted for the following formula.
Target bin boundary = KP Threshold[6:0] × 6 Ω
(1)
It is important for the proper operation of the KP detection algorithm that the thresholds be ordered correctly: KP
Threshold 1< KP Threshold 2 < KP Threshold 3. Placing them out of order will cause incorrect keys to be
detected. For information on defining the key press gray zones see the Key Press Gray Zones section.
10.2.2.4.2 System Requirements
The Key Press detection algorithm has the following system requirements to be function properly:
• MICBIAS output voltage equivalent to key press settings 2 register value within 2.5%
• MICBIAS pullup resistance equal to 2.2 kΩ ±1%
• Audio jack contact resistance must be limited to < 100 mΩ. See further information below.
Figure 32 depicts the resistor network without the TS3A227E switches for simplicity.
MICBIAS
2.2 kΩ
SLEEVE /RING2
Key1
Key2
Key3
Key4
MIC
Figure 32. Headset Microphone and Key Network
When the user presses a key it creates a voltage divider network between the MICBIAS output of the codec and
the system ground. This will be a measurable voltage on the SLEEVE/RING2 pin that follows Equation 2. Note
that this is simplified because it does not include the TS3A227E switches or the contact resistance of the jack
itself.
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VSLEEVE/RING2 = (VMICBIAS + DVMICBIAS )´
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REQ
(2.2k + D2.2k ) + REQ
(2)
The REQ can be calculated with the following:
R
´ RKEY
REQ = MIC
RMIC + RKEY
(3)
As a result of the above calculations, an ADC attempting to detect the voltage on SLEEVE/RING2 to determine
which key is pressed (whichever is the microphone pin) is reliant on the accuracy on the MICBIAS output and the
2.2 kΩ pull-up resistor. The key press bins are targeted assuming ideal values for these system conditions and
then the gray zone between the bins takes into account the system variations. As a result the better the accuracy
of the MICBIAS output and pull-up resistor the better the accuracy of the key press detection.
In addition to the above, the contact resistance of the audio jack itself can play a role in how accurate the key
press detection is. A general rule is less contact resistance is better. In the figure below a more complete picture
of the system and the voltage the TS3A227E will detect is shown.
MICBIAS
R Audio
2.2 kΩ
RING2_SENSE
L Audio
32 Ω speakers
Key R EQ
KP ADC
Jack contact
resistance
20 -100 mohm
SLEEVE _SENSE
SLEEVE
Trace routing
resistance
The red line denotes the current path for the output of the codec to follow when it enters the speakers and
eventually sinks into the GNDFETs of the TS3A227E. This audio current adds a voltage offset at the audio jack
contact resistance, the trace routing resistance, and the GNDFET itself. Because the TS3A227E has kelvin
connections to the jack via the SLEEVE_SENSE RING2_SENSE pins the trace routing resistance and GNDFET
induced voltage offsets can be compensated.
However, the jack contact resistance is not visible by the device and cannot be compensated for. To maintain the
default bin targets the system must ensure that for a given audio jack contact resistance the max current being
output by the codec/amplifier lies below the curve in Figure 34. This ensures a max error introduced of 5 mV into
the KP detection algorithm.
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10.2.2.4.3 Key Press Grey Zones
When defining custom bins and thresholds it is important to also correctly define the “gray zone” between the
bins to ensure that the system will always correctly identify the key that is being pressed. The gray zone region
accounts for the absolute error in key press detection, encompasses the error of the internal ADC along with
errors from system tolerances and variation. The equation below can be used to determine the gray zone
required between each of the bins. Note that the size of the gray zone will vary depending on the actual value of
the key press threshold.
Gray Zone = ± [(Ɛ(ADC,GAIN) + ƐMICBIAS + ƐRBIAS + Ɛ(CONT,GAIN) ) × R(KP Threshold) + (Ɛ(ADC,OFF) + Ɛ(CONT,OFF) + KBUFF ) × 6 Ω] (4)
TERM
DESCRIPTION
VALUE
Ɛ(ADC,GAIN)
Internal ADC gain error
ƐMICBIAS
Codec MICBIAS output voltage variation. Default bin values assume an output variation of 2.5%.
0.025% (1)
ƐRBIAS
MICBIAS resistor variation. Default bin values assume a 1% tolerance of the 2.2 kΩ MICBIAS
resistor.
0.01% (1)
ƐCONT.GAIN
Gain error introduced by contact resistance of the audio jack.
ƐKP Threshold
KP threshold target identified by system. E.g. the KP Threshold between bins 1 and 2 for the
default key press bins is 96 Ω.
ƐADC,OFF
Internal ADC offset and linearity error
UNIT
0.015%
RContact ´ IMAX
VMICBIAS
R
Defined by
system (1)
Ω
1.5
LSB
Contact
´I
MAX
VMICBIAS
ƐCONT,OFF
Offset error introduced by contact resistance of the audio jack.
KBUFF
Buffer constant added to total system gray zone to ensure bin values are detected correctly. It is
recommended to use a minimum of 2 for this when defining key gray zones to ensure system
level margins.
RContact
LSB
128
2
LSB
Max contact resistance of audio jack
Defined by
system (1)
Ω
IMAX
Maximum combined (Right and Left) audio output current into the jack.
Defined by
system (1)
A
VMICBIAS
MICBIAS output voltage of the codec
Defined by
system (1)
V
(1)
These values can vary depending on the system
Example Calculation
The default KP Threshold 1 value for the TS3A227E is 10h or 96 Ω. Using the Gray Zone equation the specified
gray zone between keys 1 and 2 can be confirmed assuming the following:
• VMICBIAS = 2.2 V
• IMAX × RContact = 5 mV
• R(KP Threshold) = 96 Ω
• Default values for all other terms
é
ù
æ
ö
êæ
ú
ç
÷
5 mV ö
5 mV
Gray Zone = ± êç 0.015 + 0.025 + 0.01 +
´ 96 W + ç 1.5 +
+ 2 ÷ ´ 6 W ú
÷
2.2
2.2 ø
êè
ú
çç
÷÷
êë
úû
128
è
ø
(5)
This yields a gray zone of ± 27 Ω. The KP Threshold 1 gray zone can be used to identify the upper limit of key 1
and the lower limit of key 2:
Bin 1 upper limit = KP Threshold 1 – Gray Zone 1
Bin 2 lower limit = KP Threshold 1 + Gray Zone 1
This formula yields an upper limit of 69 Ω. Because each LSB is 6 Ω we round down to the even number of 66 Ω.
For the beginning of key 2 we set the value at (96 Ω + 27 Ω) or 126 Ω (123 Ω rounded up to the nearest LSB).
This method can be used to define the rest of the key bin thresholds.
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10.2.2.4.4 Behavior
The TS3A227E can monitor the microphone line of a 4-pole headset to detect up to 4 key presses/releases and
report the key press events back to the host. The key press detection must be activated manually by setting the
KP Enable bit of the Device Settings 2 register. To ensure proper operation the MICBIAS voltage must be
applied to MICP before enabling key press detection.
Insertion Event
MICBIAS
enabled
4-pole inserted ?
Enable
Key Press Detection
MICBIAS Stable ?
Figure 33. Proper Key Press Enable Sequence
The TS3A227E monitors the S3 switch matrix to determine the location of the microphone. If the Manual Switch
Control bit is set to ‘1’, the S3 matrix must be configured in one of the following 2 configurations for the key press
detection to operate. Other configurations are not supported with key press detection.
S3PR
S3PS
S3GR
S3GS
MIC LOCATION
On
High-Z
High-Z
On
RING2
High-Z
On
On
High-Z
SLEEVE
If the voltage on the microphone line drops below the key press detection threshold for a duration longer than the
key press de-bounce time, the key press is considered to be valid. At this point the detected key has the
corresponding Key # Press interrupt bit set to ‘1’ and the interrupt is asserted. The corresponding Key # Release
interrupt is cleared at the same time the Key # Press interrupt is set.
Once the key is released for a duration longer than the key release de-bounce time, a Key Release interrupt is
generated to inform the host that the key has been released. The corresponding Key # released interrupt bit is
set to ‘1’ and the interrupt is asserted.
The Key Press interrupt register will clear the contents and return to the default status of 0h when Key Press
detection is disabled via an I2C write or a removal event.
Notes about key press detection:
• The MICBIAS setting adjusts the detection threshold and must be set to the value that is closest to the
MICBIAS output of the codec. If the MICBIAS voltage being used is between different MICBIAS settings of
the TS3A227E then the closest value that is greater than the MICBIAS voltage should be used.
– E.G. if the codec output is 2.2 V, the 2.3 V MICBIAS setting in the TS3A227E should be used.
• If any pending interrupt is not read by the host and a key is pressed, the TS3A227E will continue to run key
press detection until the Key Press Enable bit is set to ‘0’
The host will interpret Key Press and Release interrupts using the following pseudo-code:
If (Key # Press && Key # Release) {
Key # was pressed one time and is not being held.
}
else if (Key # Release ) {
Key # is being pressed, start the key press duration timer
}
else if (Key # Release) {
Key # has been released, end the key press duration timer
}
The key press duration timer the host starts after reading that a key is pressed can be used as follows:
If (Key # Press Duration Timer > XXX ms) {
The Key # is being held down, handle accordingly.
E.g. if Key # is the volume up key, the system will increment the volume until the Key #
Release interrupt is read from the TS3A227E
}
10.2.2.4.5 Single Key Press Timing
The diagram below depicts a key press event where the MIC is on the SLEEVE pin. If the MIC is on RING2 the
timing diagram will be same.
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Key Press
De-bounce
Key Release
De-bounce
SLEEVE Voltage
INT
Key 1 Press
Key 1 Release
(A )
(B )
(C)
(D) (E ) ( F)
A.
At this point the SLEEVE voltage has stopped glitching and the Key Press De-bounce timer will no longer restart.
B.
Point B is the end of the key press de-bounce period. INT will be asserted with the Key Press bit set.
C.
The host read and clears the interrupt register, de-asserting the INT pin.
D.
Here the key is released and the key release de-bounce period begins.
E.
The key release de-bounce period ends and the INT pin is asserted again with the Key Release bit set.
F.
Here the host reads and clears the interrupt register, de-asserting the INT pin.
10.2.2.4.6 Multiple Key Press Timing
The diagram below depicts a multiple key press event in which the host does not immediately read the interrupt
register. The MIC is on the SLEEVE pin in this diagram. If the MIC is on RING2 the timing diagram will be the
same.
NOTE
If the KP Enable bit is set to ‘0’ during key press detection, key press detection will stop
immediately and all the key press/release bits will be cleared.
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Key Press
De-bounce
Key Press
De-bounce
Key Release
De-bounce
Key 1 Pressed
Key Press
De-bounce
Host I 2C Read
Key Release
De-bounce
Key 2 Pressed
Key 1 Pressed
Sleeve Voltage
INT
Key 1 Press
Key 1 Release
Key 2 Press
Key 2 Release
Key 3 Press
Key 3 Release
Key 4 Press
Key 4 Release
( A)
46
( B) (C)
(D)
( E)
(F)
(G)
(H)
(I) (J)
( K)
A.
The SLEEVE voltage drops below the Key Press Detection threshold and the Key Press De-bounce timer is started
B.
The end of the key press de-bounce timer. Key 1 is detected, the Key 1 Press interrupt is set and the interrupt line is
asserted. The Key 1 Release interrupt is cleared.
C.
The SLEEVE voltage rises to MICBIAS as the key is released. The Key Release de-bounce timer is started.
D.
The Key Release de-bounce timer expires. The Key 1 Release bit is set and the interrupt is asserted.
E.
The SLEEVE voltage drops below the Key Press Detection threshold and the Key Press De-bounce timer is started
F.
The end of the key press de-bounce timer. Key 2 is detected, the Key 2 Press interrupt is set and the interrupt line is
asserted. The Key 2 Release interrupt is cleared.
G.
The SLEEVE voltage rises to MICBIAS as the key is released. The Key Release de-bounce timer is started.
H.
The Key Release de-bounce timer expires. The Key 2 Release bit is set and the interrupt is asserted.
I.
The SLEEVE voltage drops below the Key Press Detection threshold and the Key Press De-bounce timer is started
J.
The end of the key press de-bounce timer. Key 1 is detected, the Key 1 Press interrupt is set and the interrupt line is
asserted. The Key 1 Release interrupt is cleared.
K.
The host reads the I2C interrupt register and sees the following interrupts:
mmm● Key 1 Press
mmm● Key 2 Press
mmm● Key 2 Release
Using the pseudo-code in the key press detection section this is interpreted as:
mmm● Key 2 was pressed one time and is not being held
mmm● Key 1 is currently pressed, start the key press duration timer
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10.2.2.4.7 Raw Data Key Press Detection
In addition to threshold adjustment the TS3A227E features the ability to utilize the internal ADC raw output with
the Raw Data En bit of the Device Setting 2 register.
Notes on using the Raw ADC Output:
• Key Press/Release interrupts that have not been serviced will not be cleared upon setting the Raw Data En
bit to ‘1’.
• By Setting the Raw Data En bit to ‘1’ the Key Press Threshold registers will be ignored. Instead of reporting
key 1 through 4 press and releases the TS3A227E will only use Key 1 Press to indicate that a key is pressed
and the Key 1 Release interrupt to report that the key was released.
• The ADC Output register will only be cleared after the Raw Data En bit is cleared. The Raw Data En bit is
cleared if the Key Press Enable bit is set to ‘0’. Consequently the ADC Output register clears if the Raw Data
En bit is set to ‘0’, the Key Press Enable bit is set to ‘0’, or a removal event occurs. This means the ADC
Output register will not clear after it is read.
• A manual software trigger can be initiated after a key was pressed to run the ADC detection again. This will
not set the Key 1 Press interrupt.
• The ADC Output is updated after a Key is detected or if the manual ADC trigger bit is set to ‘1’. If an ADC
conversion has completed the ADC Conversion interrupt bit will be set to ‘1’ regardless if there was a
software initiated trigger or if a new key press was detected.
• If the ADC has completed a conversion the output is always non 0 meaning the lowest possible detection
threshold of the ADC is 01h. If the ADC Output register is 00h a conversion has not been completed or the
ADC Output was cleared.
The previous section on gray zones should be applied to any bins create for the raw ADC mode.
10.2.3 Application Curves
Max Current Supported (mA)
300
250
200
150
100
50
0
20
30
40
50
60
70
80
Contact Resistance (m:)
90
100
D001
Figure 34. Max Current vs Contact Resistance
11 Power Supply Recommendations
The TS3A227E is designed to operate from an input voltage supply range between 2.5 V and 4.5 V. This input
supply is recommended to be decoupled to ground via two de-coupling capacitors of 0.1µF and 1µF placed as
close as possible to the TS3A227E. To ensure a POR trip during a power-down and power-on event the power
supply should follow the minimum and maximum VDD rise and fall times specified in the electrical specifications
section.
The TS3A227E features the ability to power the digital IO pins at a different rail than the supply. This allows
systems to run the TS3A227E at 3.3 V and still use a 1.8 V eliminating the need for a translator. Have the 1.8 V
rail while the device is powered from a higher voltage will increase the current consumption of the device due to
CMOS shoot through current. This increased supply current is documented in the electrical specifications table.
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12 Layout
12.1 Layout Guidelines
•
•
•
•
•
The VDD pin must have de-coupling capacitors places as closely to the device as possible. Typically
recommended capacitors are a 0.1 µF and 1 µF capacitor.
If FM support is not needed connect GNDA to system GND along with the GND connections with the shortest
connections possible.
RING2 and SLEEVE should be routed on the same layer as the audio jack for best performance with less
than 50 mΩ to the audio jack pins. These two pins should have priority in layout over other pins. It is
recommended to not use vias on these traces and pair the device with an audio jack that facilitates this type
of layout.
The RING2_SENSE and SLEEVE_SENSE pins are kelvin connections to the audio jack and should be
shorted to RING2 and SLEEVE as close to the audio jack as possible. If there are 0 Ω resistors between the
SLEEVE/RING2 pins and the jack, connect the SENSE lines to the jack sleeve and ring2 contacts. If a
microphone is connected one of the SENSE lines will carry the microphone signal and the MICBIAS supply. It
is recommended that these traces not have more than 1 Ω impedance to the jack.
Route the I2C and digital signals away from the audio signals to prevent coupling onto the audio lines.
12.2 Layout Example (QFN)
VIA to Power Ground Plane
VIA to Bottom Copper or internal layer
Top Layer Routing
Bottom Layer Routing
Board Edge
16
TIP
DET_TRIGGER
MIC_PRESENT
15
14
SLEEVE
RING1
TIP
INT
13
GND
1
12
GND
2
11
3
10
SDA
RING2
RING 2
GNDA
3.5 mm Jack
SLEEVE
DET
VDD
4
9
5
7
8
SL EEVE _SENSE
RING 2_SENSE
MICP
GND_SE NS E
Analog
Ground
6
SCL
to codec
Figure 35. QFN Layout Example
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TS3A227E
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SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015
12.3 Layout Example (DSBGA)
WCSP PAD
VIA to Power Ground Plane
VIA to Bottom Copper or internal layer
Top Layer Routing
Bottom Layer Routing
Board Edge
3.5 mm Jack
A
B
VDD
GND_
SENSE
GND
SDA
MICP
GND
TIP
SCL
INT
RING2
GNDA
RING2_
SENSE
4
SLEEVE
TIP
3
RING1
/MIC_
PRESENT
SLEEVE
SENSE
2
1
D
RING2
C
/DET_
TRIGGER
SLEEVE
Analog Ground
DET
Figure 36. DSBGA Layout Example
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www.ti.com
13 Device and Documentation Support
13.1 Trademarks
All trademarks are the property of their respective owners.
13.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS3A227ERVAR
ACTIVE
VQFN
RVA
16
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
227
TS3A227EYFFR
ACTIVE
DSBGA
YFF
16
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
227E
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of