TS3DS26227
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
HIGH-BANDWIDTH DUAL SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
1 FEATURES
•
•
•
•
•
•
•
•
•
1
•
High-Bandwidth Data Paths – Up to 800 MHz
Specified Break-Before-Make Switching
Control Inputs Reference to VIO
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
2.3-V to 3.6-V Power Supply (V+)
1.65-V to 1.95-V Logic Supply (VIO)
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 4000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
– 200-V Machine Model (A115-A)
2 APPLICATIONS
•
•
•
•
•
Cell Phones
PDAs
Portable Instrumentation
Low-Voltage Differential Signal Routing
Mobile Industry Processor Interface (MIPI) Signal
Routing
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS3DS26227
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
www.ti.com
Table 1. TERMINAL ASSIGNMENTS
A
B
C
D
IN1
NO1
COM1
NC1
2
VIO
GND
GND
V+
3
IN2
NO2
COM2
NC2
YZT PACKAGE
(BOTTOM VIEW)
1
B C D
A
1
3
4
9
10
2
2
5
8
11
3
1
6
7
12
3 DESCRIPTION/ORDERING INFORMATION
The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal
distortion during the transferring of a signal from one path to another. The device has excellent total harmonic
distortion (THD) performance and consumes very low power. These features make this device suitable for
portable applications.
The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the
control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.
Table 2. ORDERING INFORMATION
TA
–40°C to 85°C
(1)
(2)
(3)
2
PACKAGE (1)
(2)
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZT (Pb-free)
ORDERABLE PART NUMBER
Tape and reel
TOP-SIDE MARKING (3)
TS3DS26227YZTR
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
YZT: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following
character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
TS3DS26227
www.ti.com
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
Table 3. SUMMARY OF CHARACTERISTICS (1)
Dual 2:1
Multiplexer/Demultiplexer
(2 × SPDT)
Configuration
Number of channels
2
5 Ω max
ON-state resistance (ron)
ON-state resistance match (Δron)
0.1 Ω max
ON-state resistance flatness [ron(flat)]
3 Ω max
Turn-on/turn-off time (tON/tOFF)
9 ns/4 ns
Break-before-make time (tBBM)
8 ns
Charge injection (QC)
5.5 pC
Bandwidth (BW)
800 MHz
OFF isolation (OISO)
–40 dB
Crosstalk (XTALK)
–39 dB
Leakage current [INO(OFF)/INC(OFF)]
±5 nA
Power-supply current (I+)
±20 nA
Package options
(1)
12-bump WCSP
V+ = 2.7 V, TA = 25°C
Table 4. FUNCTION TABLE
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
L
ON
OFF
H
OFF
ON
IN
LOGIC DIAGRAM
IN1
(See Note A)
NC1
COM1
NO1
NC2
COM2
NO2
IN2
(See Note A)
A.
IN1 and IN2 are control inputs referenced to VIO.
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
3
TS3DS26227
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
www.ti.com
ABSOLUTE MAXIMUM RATINGS (1)
3.1
(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
–0.5
4.6
V
–0.5
V+ + 0.5
V
V+
VIO
Supply voltage range (3)
VNC
VNO
VCOM
Analog voltage range (3)
IK
Analog port diode current
VNC, VNO, VCOM < 0, or VNC,
VNO, VCOM > V+ + 0.5
–50
50
INC
INO
ICOM
On-state switch current
VNC, VNO, VCOM = 0 to V+
–64
64
On-state peak switch current
–100
100
VI
Digital input voltage range
–0.5
VIO + 0.5
(4) (5)
(3) (4)
mA
mA
V
IIK
Digital input clamp current
–50
50
mA
I+
Continuous current through V+
–100
100
mA
IGND
Continuous current through GND
–100
100
mA
θJA
Package thermal impedance (6)
TBD
°C/W
Tstg
Storage temperature range
150
°C
(1)
(2)
(3)
(4)
(5)
(6)
4
VI < 0, or VI > VIO+ 0.5
UNIT
YZT package
–65
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
The package thermal impedance is calculated in accordance with JESD 51-7.
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
TS3DS26227
www.ti.com
3.2
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (1)
V+ = 2.7 V to 3.6 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog
signal range
ON-state
resistance
VCOM,
VNO,
VNC
ron
ON-state
resistance
match
between
channels
Δron
ON-state
resistance
flatness
ron(flat)
NC, NO
OFF leakage
current
NC, NO
ON leakage
current
COM
ON leakage
current
0
0 ≤ (VNO or VNC) ≤ 1.6,
ICOM = –10 mA,
Switch ON,
See Figure 13
25°C
Full
3.5
2.7 V
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ 1.6 V, Switch ON,
ICOM = –10 mA,
See Figure 13
INO(OFF),
INC(OFF)
VNO or VNC = 0.3 V,
VCOM = 3 V,
or
VNO or VNC = 3 V,
VCOM = 0.3 V,
Switch OFF,
See Figure 14
INO(ON),
INC(ON)
VNO or VNC = 0.3 V,
VCOM = Open,
or
VNO or VNC = 3 V,
VCOM = Open,
Switch ON,
See Figure 15
ICOM(ON)
VNO or VNC = Open,
VCOM = 0.3 V,
or
VNO or VNC = Open,
VCOM = 3 V,
Switch ON,
See Figure 15
Full
0.05
2.7 V
2
2.7 V
25°C
Full
3.6 V
25°C
Full
25°C
Full
–15
–10
3.6 V
0.2
–30
Ω
nA
10
30
0.2
Ω
5
15
–30
–10
3.6 V
0.1
Ω
3
4
–5
V
0.1
0.2
25°C
Full
5
6
25°C
VNO or VNC = 1.6 V,
ICOM = –10 mA,
V+
nA
10
30
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
VIO = 1.65 V to 1.95 V
Full
0.65 × VIO
VIO
V
Input logic low
VIL
VIO = 1.65 V to 1.95 V
Full
0
0.35 × VIO
V
25°C
–2
Input leakage
current
(1)
(2)
IIH, IIL
VIN = VIO or 0
Full
3.6 V
–10
0.1
2
10
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at VIO or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
5
TS3DS26227
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
www.ti.com
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY(1) (continued)
V+ = 2.7 V to 3.6 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
6.5
9
UNIT
Dynamic
25°C
3.3 V
1
Full
2.7 to
3.6 V
1
25°C
3.3 V
1
Full
2.7 to
3.6 V
1
25°C
3.3 V
0.5
Full
2.7 to
3.6 V
0.5
CL = 1 nF
See Figure 22
25°C
3.3 V
5.5
pC
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF
See Figure 17
Break-beforemake time
tBBM
VNC = VNO = 0.6 V,
RL = 50 Ω,
CL = 35 pF
See Figure 18
VGEN = 0,
RGEN = 0,
Charge
injection
QC
11.5
2
4
5
4
ns
ns
8
9
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = 1.3 V or
GND,
Switch OFF,
See Figure 16
25°C
3.3 V
3.5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = 1.3 V or
GND, Switch ON,
See Figure 16
25°C
3.3 V
10.5
pF
COM
ON
capacitance
CCOM(ON)
VCOM = 1.3 V or GND,
Switch ON,
See Figure 16
25°C
3.3 V
10.5
pF
Digital input
capacitance
CI
VI = V+ or GND
See Figure 16
25°C
3.3 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON
See Figure 19
25°C
2.7 V
800
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 200 MHz,
Switch OFF
See Figure 20
25°C
2.7 V
–40
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 200 MHz,
Switch ON
See Figure 21
25°C
2.7 V
–39
dB
Supply
Positive supply
current
I+
VI = V+ or GND,
Switch ON or
OFF
25°C
Logic supply
current
IIO
VI = VIO or GND,
Switch ON or
OFF
25°C
6
Full
Full
3.6 V
3.6 V
Submit Documentation Feedback
–20
1
–500
–10
–200
20
500
1
10
200
nA
nA
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
TS3DS26227
www.ti.com
3.3
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (1)
V+ = 2.3 V to 2.7 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETE
R
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
ON-state
resistance
VCOM, VNO,
VNC
ron
ON-state
resistance
match
between
channels
Δron
ON-state
resistance
flatness
ron(flat)
NC, NO
OFF leakage
current
NC, NO
ON leakage
current
COM
ON leakage
current
0
0 ≤ (VNO or VNC) ≤ 1.3,
ICOM = –10 mA,
Switch ON,
See Figure 13
25°C
Full
4
2.3 V
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ 1.3 V,
ICOM = –10 mA,
Switch ON,
See Figure 13
INO(OFF),
INC(OFF)
VNO or VNC = 0.2 V,
VCOM = 2.3 V,
or
VNO or VNC = 2.3 V,
VCOM = 0.2 V,
Switch OFF,
See Figure 14
INO(ON),
INC(ON)
VNO or VNC = 0.2 V,
VCOM = Open,
or
VNO or VNC = 2.3 V,
VCOM = Open,
Switch ON,
See Figure 15
ICOM(ON)
VNO or VNC = Open,
VCOM = 0.2 V,
or
VNO or VNC = Open,
VCOM = 2.3 V,
Switch ON,
See Figure 15
Full
0.05
2.3 V
2.5
2.3 V
25°C
Full
2.7 V
25°C
Full
25°C
Full
–15
–5
2.7 V
0.2
Ω
nA
5
20
0.05
Ω
5
15
–20
–1
2.7 V
0.1
Ω
4
4.5
–5
V
0.1
0.2
25°C
Full
5.5
7
25°C
VNO or VNC = 1.3 V,
ICOM = –10 mA,
V+
nA
1
–10
10
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic
high
VIH
VIO = 1.65 V to 1.95 V
Full
0.65 × VIO
VIO
V
Input logic
low
VIL
VIO = 1.65 V to 1.95 V
Full
0
0.35 × VIO
V
Input leakage
current
(1)
(2)
IIH, IIL
VIN = VIO or 0
25°C
Full
2.7 V
–1
–10
0.05
1
10
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at VIO or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
7
TS3DS26227
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
www.ti.com
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY(1) (continued)
V+ = 2.3 V to 2.7 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETE
R
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
7
11
UNIT
Dynamic
25°C
2.5 V
1
Full
2.3 to
2.7 V
1
25°C
2.5 V
1
Full
2.3 to
2.7 V
1
25°C
2.3 V
1
Full
2.3 to
2.7 V
1
CL = 1 nF
See Figure 22
25°C
2.5 V
4
pC
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF
See Figure 17
Break-beforemake time
tBBM
VNC = VNO = 0.6 V,
RL = 50 Ω,
CL = 35 pF
See Figure 18
VGEN = 0,
RGEN = 0,
Charge
injection
QC
13
2.5
4.5
5.5
4
ns
ns
8
10
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = 1.6 V or
GND,
Switch OFF,
See Figure 16
25°C
2.5 V
3.5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = 1.6 V or
GND,
Switch ON,
See Figure 16
25°C
2.5 V
10.5
pF
COM ON
capacitance
CCOM(ON)
VCOM = 1.6 V or GND,
Switch ON,
See Figure 16
25°C
2.5 V
10.5
pF
Digital input
capacitance
CI
VI = V+ or GND
See Figure 16
25°C
2.5 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON
See Figure 19
25°C
2.3 V
800
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 200 MHz,
Switch OFF
See Figure 20
25°C
2.3 V
–40
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 200 MHz,
Switch ON
See Figure 21
25°C
2.3 V
–39
dB
Supply
Positive
supply
current
I+
VI = V+ or GND,
Switch ON or
OFF
Logic supply
current
IIO
VI = VIO or GND,
Switch ON or
OFF
8
25°C
Full
25°C
Full
Submit Documentation Feedback
–10
2.7 V
2.7 V
1
–350
–5
–200
10
350
1
5
200
nA
nA
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
TS3DS26227
www.ti.com
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
4 TYPICAL CHARACTERISTICS
70
80
60
70
60
50
RON (W)
RON (W)
TA = -40°C
40
30
TA = 25°C
TA = -40°C
50
40
TA = 25°C
30
20
20
TA = 85°C
10
TA = 85°C
10
0
0
0.5
0
1
1.5
1
1.5
2
2.5
3
VIN (V)
VIN (V)
Figure 1. ron vs VI (NC, NO, or COM), V+=2.3 V
Figure 2. ron vs VI (NC, NO, or COM), V+=2.7 V
18
5
16
4
14
85°C NC ON
3
85°C NC OFF
2
1
TA = 85°C
12
I+ (nA)
Leakage (nA)
0.5
0
2
25°C NC ON
10
8
6
TA = -40°C
4
0
TA = 25°C
2
-1
-40°C NC ON
-2
-0.5
0
0.5
1
25°C NC OFF
1.5
2
2.5
3
0
3.5
-2
-0.5
4
0
0.5
1
Voltage (V)
2
8
9
1.8 V NC1–COM1
NC2–COM2
NO1–COM1
NO2–COM2
4
0
3.0 V
NC1–COM1
NC2–COM2
NO1–COM1
NO2–COM2
-4
-6
3.5
4
tON
7
2
-2
3
8
tON/tOFF (ns)
6
2.5
Figure 4. I+ Supply Current vs V+
Figure 3. Analog Switch Leakage Current vs VI (NC, NO, or
COM), V+=3.6 V
Charge Injection
1.5
V+ (V)
6
5
4
tOFF
3
2
1
-8
0
-10
0
0.5
1
1.5
2
2.5
3
2.3
2.5
2.7
2.9
3.1
3.3
3.5
V+ (V)
VCOM (V)
Figure 5. Charge Injection vs VCOM
Figure 6. ton/toff vs V+
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
9
TS3DS26227
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
www.ti.com
TYPICAL CHARACTERISTICS (continued)
9
0
Ton
8
-1
7
-2
Gain (dB)
Ton/Toff (ns)
6
5
4
Toff
3
-3
-4
-5
2
-6
1
-7
0
-60
-8
-40
-20
0
20
40
60
80
100
0
1
10
0
0
-20
-20
-40
-40
-60
-80
-100
-100
10000
-120
0
1
10
100
1000
0
10000
1
10
100
1000
10000
Frequency (MHz)
Figure 10. Crosstalk vs Frequency, V+=2.5 V
Frequency (MHz)
Figure 9. OFF Isolation vs Frequency, V+=2.5 V
1.6
1.6
1.4
1.4
1.2
1.2
Rise
1
Fall
0.8
Rise
1
VOUT (V)
VOUT (V)
1000
-60
-80
-120
0.6
0.4
Fall
0.8
0.6
0.4
0.2
0.2
0
0
-0.2
-0.5
-0.2
-0.5
0
0.5
1
1.5
VIN (V)
Figure 11. Threshold Voltage, VIO=1.8 V, V+=2.7 V
10
100
Frequency (MHz)
Figure 8. Bandwidth, V+=2.5 V
Gain (dB)
Gain (dB)
Temperature (°C)
Figure 7. ton/toff vs Temperature, V+ = 2.3 V
2
0
0.5
1
1.5
2
VIN (V)
Figure 12. Threshold Voltage, VIO=1.8V, V+=3.6 V
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
TS3DS26227
www.ti.com
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
5 PARAMETER MEASUREMENT INFORMATION
V+
VNO NO
COM
+
VCOM
Channel ON
r on +
VI
ICOM
IN
VCOM * VNO
W
I COM
VI = VIH or VIL
+
GND
Figure 13. ON-State Resistance (ron)
V+
VNO NO
COM
+
VCOM
+
VI
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
GND
Figure 14. OFF-State Leakage Current (ICOM(OFF), INC(OFF), ICOM(PWROFF), INC(PWROFF))
V+
VNO NO
COM
+
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 15. ON-State Leakage Current (ICOM(ON), INC(ON))
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
11
TS3DS26227
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
V+
VNO
NO
Capacitance
Meter
VBIAS = V+, VIO, or GND and
VI = VIO or GND
COM
COM
VI
IN
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
VBIAS
GND
Figure 16. Capacitance (CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON))
V+
NO
VCOM
VI
Logic
Input(1)
VNO
TEST
RL
CL
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
COM
CL(2)
IN
GND
RL
VIO
Logic
Input
(VI)
50%
50%
0
tON
Switch
Output
(VNO)
(1)
(2)
VCOM
tOFF
90%
90%
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 17. Turn-On (tON) and Turn-Off Time (tOFF)
12
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
TS3DS26227
www.ti.com
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
PARAMETER MEASUREMENT INFORMATION (continued)
V+
Logic
Input
(VI)
VNC or VNO
NC or NO
VCOM
VIO
50%
0
COM
NC or NO
CL(2)
VI
IN
(1)
90%
90%
tBBM
Logic
Input(1)
(2)
Switch
Output
(VCOM)
RL
VNC or VNO = V+/2
RL = 50 Ω
CL = 35 pF
GND
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 18. Break-Before-Make Time (tBBM)
V+
Network Analyzer
50 W
VNO
NO
Channel ON: NO to COM
COM
VCOM
Source
Signal
VI = VIH or VIL
Network Analyzer Setup
50 W
VI
+
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 19. Bandwidth (BW)
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
13
TS3DS26227
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
V+
Network Analyzer
Channel OFF: NO to COM
50 W
VNO NO
VI = VIO or GND
COM
Source
Signal
VCOM
50 W
Network Analyzer Setup
VI
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
IN
+
GND
DC Bias = 350 mV
Figure 20. OFF Isolation (OISO)
V+
Network Analyzer
50 W
VNO1
Source
Signal
VNO2
NO1
NO2
COM2
50 W
VI
Channel ON: NO to COM
COM1
50 W
Network Analyzer Setup
Source Power = 0 dBm
(632 mV P-P at 50-W load)
IN
+
GND
DC Bias = 350 mV
Figure 21. Crosstalk (XTALK)
14
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
TS3DS26227
www.ti.com
SCDS224B – JUNE 2008 – REVISED OCTOBER 2010
PARAMETER MEASUREMENT INFORMATION (continued)
V+
RGEN
VGEN
Logic
Input
(VI)
VIH
OFF
ON
OFF V
IL
NO
COM
+
VCOM
∆VCOM
VCOM
CL(1)
VI
VGEN = 0 to V+
IN
Logic
Input(2)
(1)
(2)
RGEN = 0
CL = 1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
GND
CL includes probe and jig capacitance.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
Figure 22. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = (VIO – V+/2) or −V+/2
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
Audio Analyzer
NO
Source
Signal
COM
CL(1)
600 W
VI
IN
600 W
−V+/2
(1)
CL includes probe and jig capacitance.
Figure 23. Total Harmonic Distortion (THD)
Submit Documentation Feedback
Copyright © 2008–2010, Texas Instruments Incorporated
Product Folder Links: TS3DS26227
15
PACKAGE OPTION ADDENDUM
www.ti.com
30-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS3DS26227YZTR
ACTIVE
DSBGA
YZT
12
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
(262, 26N)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
