TS5A1066
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SCDS185C – JANUARY 2005 – REVISED SEPTEMBER 2012
10-Ω SPST ANALOG SWITCH
Check for Samples: TS5A1066
FEATURES
1
•
•
•
•
•
•
•
Low ON-State Resistance (10 Ω)
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
DBV OR DCK PACKAGE
(TOP VIEW)
NO 1
5
V+
4
IN
COM 2
GND 3
YZP PACKAGE
(BOTTOM VIEW)
GND 3
4
IN
5
V+
COM 2
NO 1
DESCRIPTION/ORDERING INFORMATION
The TS5A1066 is a single-pole single-throw (SPST) analog switch that is designed to operate from 1.65 V to
5.5 V. This device can handle both digital and analog signals, and signals up to V+ (peak) can be transmitted in
either direction.
Table 1. SUMMARY OF CHARACTERISTICS
Configuration
Number of channels
ON-state resistance (ron)
ON-state resistance flatness (ron(flat))
Turn-on/turn-off time (tON/tOFF)
Charge injection (QC)
Bandwidth (BW)
OFF isolation (OISO)
Total harmonic distortion (THD)
Single-Pole,
Single-Throw Demultiplexer
(1 × SPST)
1
7.5 Ω
2.5 Ω
9.5 ns/2 ns
1 pC
400 MHz
–68 dB at 10 MHz
0.14%
Leakage current (ICOM(OFF)
±0.1 μA
Power-supply current (I+)
0.05 μA
Package options
5-pin DSBGA, SOT-23,
or SC-70
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2012, Texas Instruments Incorporated
TS5A1066
SCDS185C – JANUARY 2005 – REVISED SEPTEMBER 2012
www.ti.com
Table 2. ORDERING INFORMATION
PACKAGE (1)
TA
–40°C to 85°C
(1)
(2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING (2)
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP (Pbfree)
Tape and reel
TS5A1066YZPR
JD_
SOT (SOT-23) – DBV
Tape and reel
TS5A1066DBVR
JAD_
SOT (SC-70) – DCK
Tape and reel
TS5A1066DCKR
JD_
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
DBV/DCK: The actual top-side marking has one additional character that designates the assembly/test site.
YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following
character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
FUNCTION TABLE
IN
NO TO COM,
COM TO NO
L
OFF
H
ON
Absolute Minimum and Maximum Rating (1)
(2)
over operating free-air temperature range (unless otherwise noted)
Supply voltage range
(3)
VNO
VCOM
Analog voltage range
(3) (4) (5)
IK
Analog port diode current
INO
ICOM
On-state switch current
V+
Digital input voltage range
IIK
Digital input clamp current
I+
IGND
Continuous current through each V+ or GND
Tstg
(1)
(2)
(3)
(4)
(5)
(6)
2
MAX
–0.5
6.5
V
–0.5
V+ + 0.5
V
VNO, VCOM < 0 or VNO, VCOM > V+
–50
50
mA
VNO, VCOM = 0 to V+
–50
50
mA
–0.5
6.5
V
(3) (4)
VI
θJA
MIN
Package thermal impedance
VI < 0
(6)
–50
–100
mA
100
DBV package
206
DCK package
252
YZP package
132
Storage temperature range
–65
UNIT
150
mA
°C/W
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
The package thermal impedance is calculated in accordance with JESD 51-7.
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SCDS185C – JANUARY 2005 – REVISED SEPTEMBER 2012
Electrical Characteristics for 5-V Supply (1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO
0
ON-state
resistance
ron
0 ≤ VNO ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 13
ON-state
resistance
flatness
ron(flat)
0 ≤ VNO ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 13
INO(OFF)
VNO = 1 V,
VCOM = 4.5 V,
or
VNO = 4.5 V,
VCOM = 1 V,
Switch OFF,
See Figure 14
ICOM(OFF)
VCOM = 1 V,
VNO = 4.5 V,
or
VCOM = 4.5 V,
VNO = 1 V,
Switch OFF,
See Figure 14
INO(ON)
VNO = 1 V,
VCOM = Open,
or
VNO = 4.5 V,
VCOM = Open,
Switch ON,
See Figure 15
ICOM(ON)
VCOM = 1 V,
VNO = Open,
or
VCOM = 4.5 V,
VNO = Open,
Switch ON,
See Figure 15
NO
OFF leakage
current
COM
OFF leakage
current
NO
ON leakage
current
COM
ON leakage
current
25°C
Full
7.5
4.5 V
2.5
4.5 V
25°C
Full
25°C
Full
25°C
Full
5.5 V
0.1
μA
μA
0.2
2
0.05
Ω
0.1
0.2
–2
–0.1
5.5 V
0.05
Ω
0.2
2
–0.2
–0.2
25°C
Full
–2
–0.1
5.5 V
0.1
V
5
6
–0.2
5.5 V
10
12
25°C
Full
V+
μA
0.1
μA
–0.2
0.2
V+ × 0.7
5.5
V
V+ × 0.3
V
Digital Control Input (IN)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
IIH, IIL
Full
VI = 5.5 V or 0
Full
0
25°C
–0.1
Full
5.5 V
–1
0.05
0.1
1
μA
The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
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Electrical Characteristics for 5-V Supply(1) (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
4.8
5.5
UNIT
Dynamic
Turn-on time
tON
VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
25°C
5V
3.5
Full
4.5 V to 5.5 V
3.5
Turn-off time
tOFF
VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
25°C
5V
2
Full
4.5 V to 5.5 V
2
Charge
injection
QC
VGEN = 0,
CL = 0.1 nF,
See Figure 20
25°C
5V
1
pC
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
6.8
pF
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
6.8
pF
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
14
pF
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
14
pF
VI = V+ or GND,
See Figure 16
25°C
5V
2.2
pF
NO
OFF
capacitance
CNO(OFF)
COM
OFF
capacitance
CCOM(OFF)
NO
ON
capacitance
CNO(ON)
COM
ON
capacitance
CCOM(ON)
Digital input
capacitance
CI
7.5
3
4.5
5.5
ns
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
5V
400
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
25°C
5V
–68
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
5V
0.14
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
4
I+
25°C
Full
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5.5 V
0.05
1
5
μA
Copyright © 2005–2012, Texas Instruments Incorporated
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SCDS185C – JANUARY 2005 – REVISED SEPTEMBER 2012
Electrical Characteristics for 3.3-V Supply (1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO
0
ON-state
resistance
ron
0 ≤ VNO ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 13
ON-state
resistance
flatness
ron(flat)
0 ≤ VNO ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 13
INO(OFF)
VNO = 1 V,
VCOM = 3 V,
or
VNO = 3 V,
VCOM = 1 V,
Switch OFF,
See Figure 14
ICOM(OFF)
VCOM = 1 V,
VNO = 3 V,
or
VCOM = 3 V,
VNO = 1 V,
Switch OFF,
See Figure 14
NO
OFF leakage
current
COM
OFF leakage
current
NO
ON leakage
current
COM
ON leakage
current
INO(ON)
ICOM(ON)
25°C
Full
Full
Full
5
3V
VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,
Switch ON,
See Figure 15
Full
25°C
Full
3.6 V
0.1
μA
μA
0.2
2
0.05
Ω
0.1
0.2
–2
–0.1
3.6 V
0.05
Ω
0.2
2
–0.2
–0.2
25°C
Full
–2
–0.1
3.6 V
0.1
V
10
12
–0.2
3.6 V
14
17
25°C
25°C
Switch ON,
See Figure 15
11.5
3V
25°C
VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,
V+
μA
0.1
μA
–0.2
0.2
V+ × 0.7
5.5
V
V+ × 0.3
V
Digital Control Input (IN)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
IIH, IIL
Full
Full
VI = 5.5 V or 0
25°C
Full
0
3.6 V
–0.1
0.05
–1
0.1
1
μA
The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
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Electrical Characteristics for 3.3-V Supply(1) (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
3.3 V
4.5
5.5
8
Full
3 V to
3.6 V
4.5
25°C
3.3 V
2
Full
3 V to
3.6 V
2
UNIT
Dynamic
Turn-on time
tON
VCOM = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Charge
injection
QC
VGEN = 0,
CL = 0.1 nF,
See Figure 20
25°C
3.3 V
1
pC
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
3.3 V
6.8
pF
VCOM = V+ or GND,
See Figure 16
Switch OFF,
25°C
3.3 V
6.8
pF
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
14
pF
VCOM = V+ or GND,
See Figure 16
Switch ON,
25°C
3.3 V
14
pF
VI = V+ or GND,
See Figure 16
25°C
3.3 V
2.2
pF
NO
OFF
capacitance
CNO(OFF)
COM
OFF
capacitance
CCOM(OFF)
NO
ON
capacitance
CNO(ON)
COM
ON
capacitance
CCOM(ON)
Digital input
capacitance
CI
8.5
3
ns
4.5
5.5
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
3.3 V
400
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
25°C
3.3 V
–68
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
3.3 V
0.2
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
6
I+
25°C
Full
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3.6 V
0.05
1
5
μA
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SCDS185C – JANUARY 2005 – REVISED SEPTEMBER 2012
Electrical Characteristics for 2.5-V Supply (1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO
0
ON-state
resistance
ron
0 ≤ VNO ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 13
ON-state
resistance
flatness
ron(flat)
0 ≤ VNO ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 13
INO(OFF)
VNO = 0.5 V,
VCOM = 2.2 V,
or
VNO = 2.2 V,
VCOM = 0.5 V,
Switch OFF,
See Figure 14
ICOM(OFF)
VCOM = 0.5 V,
VNO = 2.2 V,
or
VCOM = 2.2 V,
VNO = 0.5 V,
Switch OFF,
See Figure 14
INO(ON)
VNO = 0.5 V,
VCOM = Open,
or
VNO = 2.2 V,
VCOM = Open,
Switch ON,
See Figure 15
ICOM(ON)
VCOM = 0.5 V,
VNO = Open,
or
VCOM = 2.2 V,
VNO = Open,
Switch ON,
See Figure 15
NO
OFF leakage
current
COM
OFF leakage
current
NO
ON leakage
current
COM
ON leakage
current
25°C
Full
20
2.3 V
7.5
2.3 V
25°C
Full
25°C
Full
25°C
Full
2.7 V
0.1
μA
μA
0.2
2
0.05
Ω
0.1
0.2
–2
–0.1
2.7 V
0.05
Ω
0.2
2
–0.2
–0.2
25°C
Full
–2
–0.1
2.7 V
0.1
V
15
20
–0.2
2.7 V
24
27
25°C
Full
V+
μA
0.1
μA
–0.2
0.2
V+ × 0.7
5.5
V
V+ × 0.3
V
Digital Control Input (IN)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
IIH, IIL
Full
Full
VI = 5.5 V or 0
25°C
Full
0
2.7 V
–0.1
0.05
–1
0.1
1
μA
The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
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Electrical Characteristics for 2.5-V Supply(1) (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
2.5 V
4.5
5.5
8
Full
2.3 V to
2.7 V
4.5
25°C
2.5 V
1.5
Full
2.3 V to
2.7 V
1.5
UNIT
Dynamic
Turn-on time
tON
VCOM = 1.5 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = 1.5 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Charge
injection
QC
VGEN = 0,
CL = 0.1 nF,
See Figure 20
25°C
2.5 V
1
pC
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
6.8
pF
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
6.8
pF
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
14
pF
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
14
pF
VI = V+ or GND,
See Figure 16
25°C
2.5 V
2.2
pF
NO
OFF
capacitance
CNO(OFF)
COM
OFF
capacitance
CCOM(OFF)
NO
ON
capacitance
CNO(ON)
COM
ON
capacitance
CCOM(ON)
Digital input
capacitance
CI
8.5
2.5
ns
4
5.5
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
2.5 V
400
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
25°C
2.5 V
–68
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
2.5 V
0.32
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
8
I+
25°C
Full
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2.7 V
0.05
1
5
μA
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SCDS185C – JANUARY 2005 – REVISED SEPTEMBER 2012
Electrical Characteristics for 1.8-V Supply (1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
VCOM, VNO
0
ON-state
resistance
ron
0 ≤ VNO ≤ V+,
ICOM = –4 mA,
Switch ON,
See Figure 13
ON-state
resistance
flatness
ron(flat)
0 ≤ VNO ≤ V+,
ICOM = –4 mA,
Switch ON,
See Figure 13
INO(OFF)
VNO = 0.3 V,
VCOM = 1.65 V,
or
VNO = 1.65 V,
VCOM = 0.3 V,
Switch OFF,
See Figure 14
ICOM(OFF)
VCOM = 0.3 V,
VNO = 1.65 V,
or
VCOM = 1.65 V,
VNO = 0.3 V,
Switch OFF,
See Figure 14
INO(ON)
VNO = 0.3 V,
VCOM = Open,
or
VNO = 1.65 V,
VCOM = Open,
Switch ON,
See Figure 15
ICOM(ON)
VCOM = 0.3 V,
VNO = Open,
or
VCOM = 1.65 V,
VNO = Open,
Switch ON,
See Figure 15
NO
OFF leakage
current
COM
OFF leakage
current
NO
ON leakage
current
COM
ON leakage
current
25°C
Full
74.5
1.65 V
64.5
1.65 V
25°C
Full
25°C
Full
25°C
Full
1.95 V
0.1
μA
μA
0.2
2
0.05
Ω
0.1
0.2
–2
–0.1
1.95 V
0.05
Ω
0.2
2
–0.2
–0.2
25°C
Full
–2
–0.1
1.95 V
0.1
V
70
90
–0.2
1.95 V
80
100
25°C
Full
V+
μA
0.1
μA
–0.2
0.2
V+ × 0.65
5.5
V
V+ × 0.35
V
Digital Control Input (IN)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
IIH, IIL
Full
VI = 5.5 V or 0
Full
0
25°C
–0.1
Full
1.95 V
–1
0.05
0.1
1
μA
The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
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SCDS185C – JANUARY 2005 – REVISED SEPTEMBER 2012
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Electrical Characteristics for 1.8-V Supply(1) (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
1.8 V
9.5
10
12
Full
1.65 V to
1.95 V
8.5
25°C
1.8 V
1.5
Full
1.65 V to
1.95 V
1.5
UNIT
Dynamic
Turn-on time
tON
VCOM = 1.3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = 1.3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Charge
injection
QC
VGEN = 0,
CL = 0.1 nF,
See Figure 20
25°C
1.8 V
1
pC
VNO = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
6.8
pF
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
6.8
pF
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
14
pF
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
14
pF
VI = V+ or GND,
See Figure 16
25°C
1.8 V
2.2
pF
NO
OFF
capacitance
CNO(OFF)
COM
OFF
capacitance
CCOM(OFF)
NO
ON
capacitance
CNO(ON)
COM
ON
capacitance
CCOM(ON)
Digital input
capacitance
CI
13
2
ns
4
5.5
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
1.8 V
400
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
25°C
1.8 V
–68
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
1.8 V
0.32
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
10
I+
25°C
Full
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1.95 V
0.05
1
5
μA
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TYPICAL PERFORMANCE
90
80
VCC = 1.65 V
70
ron (W)
60
50
40
VCC = 2.3 V
30
VCC = 3 V
20
VCC = 4.5 V
10
0
0
1
2
3
4
5
VCOM (V)
Figure 1. ron vs VCOM
9
8
855C
V+ = 4.5 V
7
255C
ron (W)
6
–405C
5
4
3
2
1
0
0
0.5
1 1.5
2
2.5 3
VCOM (V)
3.5
4
4.5
5
Figure 2. ron vs VCOM (V+ = 3 V)
14
V+ = 3 V
12
ron (W)
10
855C
8
255C
6
–405C
4
2
0
0
0.5
1
1.5
2
VCOM V
2.5
3
3.5
Figure 3. ron vs VCOM (V+ = 5 V)
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TYPICAL PERFORMANCE
5
ICOM(ON) COM NO
INO(ON) NO COM
ICOM (OFF) NO LO
ICOM (OFF) NO HI
INO (OFF) COM LO
INO (OFF) COM HI
IIN_VIN ‘IN’ C-LO
IIN_VIN ‘IN’ C-HI
4
Leakage (nA)
3
2
1
0
−1
−60
−40
−20
0
20
40
60
80
100
TA (5C)
Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
3.5
Charge Injection (pC)
3
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
Bias Voltage (V)
Figure 5. Charge Injection (QC) vs Bias Voltage
12
TA = 25°C
tON/tOFF (ns)
10
8
tON
6
tOFF
4
2
0 0
1
2
3
V+ (V)
4
5
6
Figure 6. tON and tOFF vs Supply Voltage
12
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TYPICAL PERFORMANCE
6
tON
5
4
tON/tOFF (ns)
tOFF
3
2
1
0
−40
25
85
TA (5C)
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
Logic Level Threshold (nA)
3.5
3.0
2.5
VIH
2.0
1.5
VIL
1.0
0.5
0.0
0
1
2
3
4
5
6
V+ (V)
Figure 8. Logic-Level Threshold vs V+
0
−0.5
−1
Gain (dB)
−1.5
−2
−2.5
−3
−3.5
−4
−4.5
100
1K
10K
Frequency (MHz)
100K
1M
Figure 9. Bandwidth (V+ = 5 V)
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TYPICAL PERFORMANCE
0
Attenuation (dB)
−20
−40
−60
−80
−100
−120
1K
100
10K
Frequency (MHz)
1M
100K
Figure 10. OFF Isolation (V+ = 5 V)
0.4
THD + Noise (%)
0.35
0.3
0.25
V+ = 3.3 V
0.2
0.15
V+ = 5 V
0.1
0.05
0
10
100
1M
10M
100M
Frequency (Hz)
Figure 11. Total Harmonic Distortion vs Frequency
700
600
V+ = 5.5 V
I+ (nA)
500
400
300
200
100
0
−60
−40
−20
0
20
40
60
80
100
TA (5C)
Figure 12. Power-Supply Current vs Temperature (V+ = 5 V)
14
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SCDS185C – JANUARY 2005 – REVISED SEPTEMBER 2012
Table 3. PIN DESCRIPTION
PIN
NAME
1
NO
DESCRIPTION
2
COM
Common
3
GND
Digital ground
4
IN
Digital control to connect COM to NO
5
V+
Power supply
Normally open
Table 4. PARAMETER DESCRIPTION
SYMBOL
VCOM
VNO
ron
ron(flat)
DESCRIPTION
Voltage at COM
Voltage at NO
Resistance between COM and NO ports when the channel is ON
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input.Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CI
Capacitance of IN
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NO to COM) in the OFF state.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is -3 dB below the DC gain.
THD
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher
harmonics to the magnitude of fundamental harmonic.
I+
ΔI+
Static power-supply current with the control (IN) pin at V+ or GND
This is the increase in I+ for each control (IN) input that is at the specified voltage, rather than at V+ or GND.
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PARAMETER MEASUREMENT INFORMATION
V+
VNO NO
COM
+
VCOM
Channel ON
r on +
VI
ICOM
IN
VCOM * VNO
W
I COM
VI = VIH or VIL
+
GND
Figure 13. ON-State Resistance (ron)
V+
VNO NO
COM
+
VCOM
+
VI
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
GND
Figure 14. OFF-State Leakage Current (ICOM(OFF), INO(OFF))
V+
VNO NO
COM
+
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 15. ON-State Leakage Current (ICOM(ON), INO(ON))
16
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
VCOM
COM
Capacitance
Meter
VBIAS = V+ or GND
VI = VIH or VIL
VNO
NO
VI
IN
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
VBIAS
GND
Figure 16. Capacitance (CI, CCOM(OFF), CCOM(ON), CNO(OFF), CNO(ON))
V+
NO
VCOM(3)
VI
Logic
Input(1)
TEST
RL
CL
tON
300 Ω
35 pF
tOFF
300 Ω
35 pF
VNO
COM
CL(2)
IN
GND
RL
V+
Logic
Input
(VI)
50%
50%
0
tON
tOFF
Switch
Output
(VNO)
90%
90%
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 W, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
(3) See Electrical Characteristics for VCOM.
Figure 17. Turn-On (tON) and Turn-Off Time (tOFF)
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
Network Analyzer
50 W
VNO
NO
Channel ON: NO to COM
COM
VCOM
VI = VIH or VIL
Source
Signal
Network Analyzer Setup
VI
50 W
IN
+
Source Power = 0 dBM
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 18. Bandwidth (BW)
V+
Network Analyzer
Channel OFF: NO to COM
50 W
VNO NO
VI = VIH or VIL
COM
Source
Signal
VCOM
50 W
Network Analyzer Setup
VI
50 W
+
Source Power = 0 dBM
(632-mV P-P at 50-W load)
IN
GND
DC Bias = 350 mV
Figure 19. OFF Isolation (OISO)
18
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SCDS185C – JANUARY 2005 – REVISED SEPTEMBER 2012
PARAMETER MEASUREMENT INFORMATION (continued)
V+
RGEN
VGEN
VIH
Logic
Input
(VI)
OFF
ON
OFF V
IL
NO
COM
+
VCOM
∆VCOM
VCOM
CL(2)
VI
VGEN = 0 to V+
IN
Logic
Input(1)
RGEN = 0
CL = 0.1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
GND
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 W, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
Figure 20. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
V+/2
VI = VIH or VIL
V+
fSOURCE = 20 Hz to 20 kHz
RL
RL = 600 Ω
CL = 50 pF
10 mF
NO
10 mF
VO
COM
Analyzer
CL(1)
VSOURCE
RL
VI
IN
+
GND
(1) CL includes probe and jig capacitance.
Figure 21. Total Harmonic Distortion (THD)
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REVISION HISTORY
Changes from Revision B (April 2006) to Revision C
•
20
Page
Updated package options information. ................................................................................................................................. 2
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PACKAGE OPTION ADDENDUM
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30-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS5A1066DBVR
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 85
(JADF, JADJ, JADR)
TS5A1066DBVRG4
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JADF
TS5A1066DCKR
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 85
(JD5, JDF, JDJ, JD
R)
TS5A1066DCKRG4
ACTIVE
SC70
DCK
5
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JD5, JDF, JDJ, JD
R)
TS5A1066YZPR
ACTIVE
DSBGA
YZP
5
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
JDN
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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