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TS5A12301E
SCES707C – AUGUST 2008 – REVISED DECEMBER 2016
TS5A12301E IEC Level 4 ESD-protected 0.75-Ω SPDT Analog Switch
With 1.8-V Compatible Input Logic
1 Features
2 Applications
•
•
•
•
•
•
•
•
•
•
•
•
1
•
•
•
•
Low ON-State Resistance (0.75 Ω)
Low Charge Injection
Excellent ON-State Resistance Matching
Isolation in Power-Down Mode, VCC = 0
Specified Break-Before-Make Switching
2.25-V to 5.5-V Power Supply (VCC)
6-MΩ Input Pulldown Allows Control Input (IN) to
Be Unconnected
1.8-V Compatible Control Input Threshold
Independent of VCC
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 3000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
ESD Performance COM Port to GND
– 8000-V Human-Body Model
(A114-B, Class II)
– ±8-kV Contact Discharge
(IEC 61000-4-2)
– ±15-kV Air-Gap Discharge
(IEC 61000-4-2)
3
Cell Phones
PDAs
Portable Instrumentation
MP3 Players
Portable Media Players
Description
The TS5A12301E device is a bidirectional, 1-channel,
single-pole double-throw (SPDT) analog switch that is
designed to operate from 2.25 V to 5.5 V. The device
offers a low ON-state resistance with excellent
channel-to-channel ON-state resistance matching and
the break-before-make feature to prevent signal
distortion during the transferring of a signal from one
path to another.
The device has excellent total harmonic distortion
(THD) performance and consumes very low power.
These features make this device suitable for portable
audio applications. The control input (IN) pin can be
connected to low-voltage GPIOs, allowing it to be
controlled by 1.8-V signals.
The TS5A12301E has ±15-kV air-gap discharge and
±8-kV contact discharge ESD protection for the COM
port to GND, which makes it compliant with the IEC
Level 4 ESD standard (IEC 61000-4-2).
Device Information(1)
PART NUMBER
TS5A12301E
PACKAGE
DSBGA (6)
BODY SIZE (NOM)
1.16 mm × 0.76 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
VCC
COM
IN
NC
GND
NO
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS5A12301E
SCES707C – AUGUST 2008 – REVISED DECEMBER 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
7
8
1
1
1
2
3
4
Absolute Maximum Ratings ...................................... 4
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 5
Electrical Characteristics – 5-V Supply ..................... 5
Electrical Characteristics – 3.3-V Supply .................. 7
Electrical Characteristics – 2.5-V Supply .................. 8
Typical Characteristics ............................................ 10
Parameter Measurement Information ................ 12
Detailed Description ............................................ 16
8.1 Overview ................................................................. 16
8.2 Functional Block Diagram ....................................... 16
8.3 Feature Description................................................. 16
8.4 Device Functional Modes........................................ 16
9
Application and Implementation ........................ 17
9.1 Application Information............................................ 17
9.2 Typical Application .................................................. 17
10 Power Supply Recommendations ..................... 18
11 Layout................................................................... 18
11.1 Layout Guidelines ................................................. 18
11.2 Layout Example .................................................... 18
12 Device and Documentation Support ................. 19
12.1
12.2
12.3
12.4
12.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
19
13 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (April 2011) to Revision C
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
•
Changed all references of V+ pin to VCC ................................................................................................................................ 1
•
Deleted Ordering Information table; see POA at the end of the data sheet........................................................................... 1
•
Deleted Summary of Characteristics table ............................................................................................................................ 1
•
Changed continuous current parameter symbol from: I+ to: ICC........................................................................................... 4
•
Moved the on-state switch current and on-state peak switch current parameters to the Recommended Operating
Conditions............................................................................................................................................................................... 4
•
Changed RthetaJA value for the YFP package from: 154.2°C/W to: 123.4°C/W .................................................................. 5
•
Removed analog signal range parameters from the Electrical Characteristics tables ........................................................... 5
•
Deleted Leakage Current vs Temperature (VCC = 5 V) graph.............................................................................................. 10
•
Deleted Control Input Thresholds graph............................................................................................................................... 10
•
Added ohm symbols to Figure 18, Figure 19, and Figure 22 .............................................................................................. 14
Changes from Revision A (December 2009) to Revision B
•
2
Page
Added Logic Diagram ............................................................................................................................................................. 1
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SCES707C – AUGUST 2008 – REVISED DECEMBER 2016
5 Pin Configuration and Functions
YFP Package
6-Pin DSBGA
Top View
YFP PACKAGE
C
C
B
B
A
A
2 1
(Laser Marking View)
1 2
(Bump View)
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
COM
B2
I/O
Common signal path
GND
B1
—
Ground
Digital control:
High = COM connected to NO
Low = COM connected to NC
Floating = COM connected to NC
IN
A2
I
NC
C1
I/O
Normally closed signal path
NO
A1
I/O
Normally open signal path
VCC
C2
—
Power supply
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SCES707C – AUGUST 2008 – REVISED DECEMBER 2016
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
UNIT
VCC
Supply voltage (3)
–0.5
6.5
V
VNC,
VNO,
VCOM
Analog voltage (3) (4)
–0.5
VCC + 0.5
V
IIK
Analog port diode current
–50
50
mA
–0.5
6.5
VCC < VNC, VNO, VCOM, or
VNC, VNO, VCOM < 0
(3) (5)
VIN
Digital input voltage
IIK
Digital input clamp current
ICC,
IGND
Continuous current through VCC or GND
–100
100
mA
Tstg
Storage temperature
–65
150
°C
(1)
(2)
(3)
(4)
(5)
VI < 0
V
–50
mA
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention (whereby the most negative value is a minimum and the most positive value is a maximum)
All voltages are with respect to ground (unless otherwise specified).
This value is limited to 5.5 V maximum.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±8000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±8000
Contact discharge (IEC 61000-4-2)
8000
Air-gap discharge (IEC 61000-4-2)
15000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Supply voltage
2.25
5.5
V
VNC,
VNO,
VCOM
Analog voltage
0
VCC
V
VIN
Digital input voltage
0
5.5
V
INC,
INO,
ICOM
On-state switch current
VNC, VNO, VCOM = 0 to VCC
–450
450
On-state peak switch current (1)
VNC, VNO, VCOM = 0 to VCC
–700
700
TA
Operating temperature
–40
85
(1)
4
mA
°C
Pulse at 1-ms duration < 10% duty cycle
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6.4 Thermal Information
TS5A12301E
THERMAL METRIC (1)
YFP (DSBGA)
UNIT
6 PINS
RθJA
Junction-to-ambient thermal resistance (2)
RθJC(top)
RθJB
123.4
°C/W
Junction-to-case (top) thermal resistance
1.9
°C/W
Junction-to-board thermal resistance
37.6
°C/W
ψJT
Junction-to-top characterization parameter
0.4
°C/W
ψJB
Junction-to-board characterization parameter
37.7
°C/W
(1)
(2)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
The package thermal impedance is calculated in accordance with JESD 51-7.
6.5 Electrical Characteristics – 5-V Supply
VCC = 4.5 V to 5.5 V and TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.5
0.75
UNIT
ANALOG SWITCH
ron
ON-state resistance
VNO or VNC = 2.5 V, ICOM = –100 mA,
and VCC = 4.5 V (see Figure 12)
Δron
ON-state resistance
match between
channels
VNO or VNC = 2.5 V, ICOM = –100 mA,
and VCC = 4.5 V (see Figure 12)
ron(flat)
ON-state resistance
flatness
TA = 25°C
TA = –40°C to 85°C
0.8
TA = 25°C
0.05
TA = –40°C to 85°C
VNO or VNC = 1 V, 1.5 V, 2.5 V,
ICOM = –100 mA, and VCC = 4.5 V
(see Figure 12)
TA = 25°C
VNO = 1 V, 4.5 V, VCOM = 4.5 V, 1 V,
VNC = open, or VNO = 1 V, 4.5 V,
VCOM = 4.5 V, 1 V, VNO = open, and
VCC = 5.5 V (see Figure 13)
TA = 25°C
0.1
0.1
0 ≤ (VNO or VNC) ≤ VCC, ICOM = –100 mA, VCC = 4.5 V,
and TA = 25°C (see Figure 12)
Ω
Ω
0.15
0.1
TA = –40°C to 85°C
0.2
0.25
–20
2
20
INO(OFF),
INC (OFF)
NO and NC OFF
leakage current
TA = –40°C to 85°C
–100
100
INO(PWROFF),
INC (PWROFF)
NO and NC PWROFF VNO or VNC = 0 V to 5.5 V, VCOM = 5.5 V TA = 25°C
leakage current
to 0 V, and VCC = 0 V (see Figure 13)
TA = –40°C to 85°C
–10
10
–10
10
INO(ON)
NC and NO ON
leakage current
VNO = 1 V, 4.5 V, VCOM, VNC = open, or
VNC = 1 V, 4.5 V, VCOM, VNO = open,
and VCC = 5.5 V (see Figure 14)
TA = –40°C to 85°C
–200
COM ON leakage
current
VCOM = 1 V, 4.5 V, VNO and VNC = open, TA = 25°C
or VCOM = 1 V, 4.5 V, VNO or
VNC = open, and VCC = 5.5 V (see
TA = –40°C to 85°C
Figure 14)
–20
ICOM(ON)
ICOM(PWROFF)
COM OFF leakage
current
TA = 25°C
Ω
–20
2
µA
20
200
2
nA
nA
20
–200
200
VNO or VNC = 0 V to 5.5 V, VCOM = 5.5 V TA = 25°C
to 0 V, and VCC = 0 V (see Figure 13)
TA = –40°C to 85°C
–10
10
–10
10
nA
µA
DIGITAL CONTROL INPUT (IN)
VIH
Input logic high
VCC = 5.5 V and TA = –40°C to 85°C
1.05
5.5
V
VIL
Input logic low
VCC = 5.5 V and TA = –40°C to 85°C
0
0.65
V
IIH,
IIL
Input leakage current
VIN = 1.95 V or 0 V, VCC = 5.5 V, and TA = –40°C to 85°C
–0.05
0.5
µA
rIN
Input resistance
VIN = 1.95 V, VCC = 5.5 V, and TA = –40°C to 85°C
(1)
6
MΩ
The algebraic convention (whereby the most negative value is a minimum and the most positive value is a maximum)
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Electrical Characteristics – 5-V Supply (continued)
VCC = 4.5 V to 5.5 V and TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
110
225
UNIT
DYNAMIC
tON
Turnon time
tOFF
Turnoff time
VCOM = VCC, RL = 50 Ω, CL= 35 pF
(see Figure 16)
VCOM = VCC, RL = 50 Ω, CL = 35 pF
(see Figure 16)
VCC = 5 V and
TA = 25°C
ns
VCC = 4.5 V and
TA = –40°C to 85°C
250
VCC = 5 V and
TA = 25°C
100
215
ns
VCC = 4.5 V and
TA = –40°C to 85°C
225
VCC = 5 V and
TA = 25°C
1
VCC = 4.5 V and
TA = –40°C to 85°C
1
10
15
Break-before-make
time
VCOM = VCC, RL = 50 Ω, CL = 35 pF
(see Figure 17)
QC
Charge injection
VGEN = 0, RGEN = 0, CL = 1 nF, VCC = 5 V, and TA = 25°C
(see Figure 21)
97
pC
CNO(OFF)
NO OFF capacitance
VNC or VNO = VCC or GND, switch OFF, VCC = 5 V,
and TA = 25°C (see Figure 15)
28
pF
CNC(ON),
CNO(ON)
NC and NO ON
capacitance
VNC or VNO = VCC or GND, switch ON, VCC = 5 V,
and TA = 25°C (see Figure 15)
112
pF
CCOM(ON)
COM ON capacitance
VCOM = VCC or GND, switch ON, VCC = 5 V, and TA = 25°C
(see Figure 15)
112
pF
CI
Digital input
capacitance
VIN = VCC or GND, and TA = 25°C (see Figure 15)
3
pF
BW
Bandwidth
RL = 50 Ω, switch ON, VCC = 5 V, and TA = 25°C
(see Figure 18)
55
MHz
OISO
OFF isolation
RL = 50 Ω, f = 1 MHz, VCC = 5 V, and TA = 25°C
(see Figure 19)
–63
dB
XTALK
Crosstalk
RL = 50 Ω, f = 1 MHz, VCC = 5 V, and TA = 25°C
(see Figure 20)
–63
dB
THD
Total harmonic
distortion
RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, VCC = 5 V,
and TA = 25°C (see Figure 22)
Positive supply
current
VIN = VCC or GND, VCC = 5.5 V, and TA = –40°C to 85°C
tBBM
ns
20
0.003
%
SUPPLY
ICC
6
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10
µA
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SCES707C – AUGUST 2008 – REVISED DECEMBER 2016
6.6 Electrical Characteristics – 3.3-V Supply
VCC = 3 V to 3.6 V and TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.75
0.9
UNIT
ANALOG SWITCH
ON-state resistance
VNO or VNC = 2 V, ICOM = –100 mA,
switch ON, and VCC = 3 V (see
Figure 12)
TA = 25°C
ron
ON-state resistance
match between
channels
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA, switch ON, and
VCC = 3 V (see Figure 12)
TA = 25°C
Δron
ron(flat)
ON-state resistance
flatness
TA = –40°C to 85°C
1.2
0.1
TA = –40°C to 85°C
VNO or VNC = 0.8 V, 2 V,
ICOM = –100 mA, switch ON, and
VCC = 3 V (see Figure 12)
TA = 25°C
0.15
0.15
0 ≤ (VNO or VNC) ≤ VCC, ICOM = –100 mA, switch ON,
VCC = 3 V, and TA = 25°C (see Figure 12)
Ω
Ω
0.2
0.1
TA = –40°C to 85°C
0.2
0.3
–20
NO and NC OFF
leakage current
VNO = 1 V, 3 V, VCOM = 3 V, 1 V,
VNC = open, or VNC = 1 V, 3 V,
VCOM = 3 V, 1 V, VNO = open, switch
OFF, and VCC = 3.6 V (see Figure 13)
TA = 25°C
INO(OFF),
INC (OFF)
TA = –40°C to 85°C
–50
50
INO(PWROFF),
INC (PWROFF)
NO and NC
PWROFF leakage
current
VNO or VNC = 0 V to 3.6 V, VCOM = 3.6 V
to 0 V, switch OFF, and VCC = 0 V
(see Figure 13)
TA = 25°C
–10
10
TA = –40°C to 85°C
–10
10
–20
INO(ON)
VNO = 1 V, 3 V, VNC and VCOM = open,
or VNC = 1 V, 3 V, VNO and
VCOM = open, switch ON, and
VCC = 3.6 V (see Figure 14)
TA = 25°C
NC and NO ON
leakage current
COM ON leakage
current
VCOM = 1 V, VNO and VNC = open, or
VCOM = 3 V, VNO and VNC = open, and
VCC = 3.6 V (see Figure 14)
TA = 25°C
ICOM(ON)
ICOM(PWROFF)
COM OFF leakage
current
VNO or VNC = 0 V to 3.6 V, VCOM = 3.6 V
to 0 V, and VCC = 0 V (see Figure 13)
TA = –40°C to 85°C
2
2
–100
20
2
nA
µA
20
100
–20
TA = –40°C to 85°C
Ω
nA
20
–100
100
TA = 25°C
–10
10
TA = –40°C to 85°C
–10
10
nA
µA
DIGITAL CONTROL INPUT (IN)
VIH
Input logic high
VCC = 3.6 V and TA = –40°C to 85°C
1.05
5.5
V
VIL
Input logic low
VCC = 3.6 V and TA = –40°C to 85°C
0
0.65
V
IIH,
IIL
Input leakage
current
VI = 1.95 V or 0 V, VCC = 3.6 V, and TA = –40°C to 85°C
–0.05
0.5
µA
rIN
Input resistance
VI = 1.95 V, VCC = 3.6 V, and TA = –40°C to 85°C
Turnon time
VCOM = VCC, RL = 50 Ω, CL= 35 pF
(see Figure 16)
6
MΩ
DYNAMIC
tON
tOFF
Turnoff time
VCOM = VCC, RL = 50 Ω, CL = 35 pF
(see Figure 16)
VCC = 3.3 V and
TA = 25°C
105
170
VCC = 3.3 V and
TA = 25°C
1
VCC = 3 V and
TA = –40°C to 85°C
1
Charge injection
VGEN = 0, RGEN = 0, CL = 1 nF
(see Figure 21)
CNO(OFF)
NO OFF
capacitance
VNO = VCC or GND, switch OFF, VCC = 3.3 V, and TA = 25°C
(see Figure 15)
CNC(ON),
CNO(ON)
NC and NO ON
capacitance
VNC or VNO = VCC or GND, switch ON, VCC = 3.3 V,
and TA = 25°C (see Figure 15)
VCC = 3.3 V and
TA = 25°C
165
ns
VCC = 3 V and
TA = –40°C to 85°C
QC
(1)
185
VCC = 3.3 V and
TA = 25°C
VCOM = VCC, RL = 50 Ω, CL = 35 pF,
(see Figure 17)
175
ns
VCC = 3 V and
TA = –40°C to 85°C
Break-before-make
time
tBBM
72
16
30
ns
35
97
pC
28
pF
115
pF
The algebraic convention (whereby the most negative value is a minimum and the most positive value is a maximum)
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Electrical Characteristics – 3.3-V Supply (continued)
VCC = 3 V to 3.6 V and TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
MIN
CCOM(ON)
COM ON
capacitance
VCOM = VCC or GND, switch ON, VCC = 3.3 V, and TA = 25°C
(see Figure 15)
CI
Digital input
capacitance
VIN = VCC or GND, VCC = 3.3 V, and TA = 25°C
(see Figure 15)
BW
Bandwidth
OISO
TYP
MAX
UNIT
115
pF
3
pF
RL = 50 Ω, switch ON, VCC = 3.3 V, and TA = 25°C
(see Figure 18)
54
MHz
OFF isolation
RL = 50 Ω, f = 1 MHz, VCC = 3.3 V, and TA = 25°C
(see Figure 19)
–63
dB
XTALK
Crosstalk
RL = 50 Ω, f = 1 MHz, VCC = 3.3 V, and TA = 25°C
(see Figure 20)
–63
dB
THD
Total harmonic
distortion
RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, VCC = 3.3 V, and
TA = 25°C (see Figure 22)
Positive supply
current
VIN = 1.95 V or GND, VCC = 3.6 V, and TA = 25°C
0.004%
SUPPLY
ICC
10
µA
6.7 Electrical Characteristics – 2.5-V Supply
VCC = 2.25 V to 2.75 V and TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
1.1
1.3
UNIT
ANALOG SWITCH
ON-state resistance
VNO or VNC = 1.8 V, ICOM = –100 mA,
switch ON, and VCC = 2.25 V
(see Figure 12)
TA = 25°C
ron
ON-state resistance
match between
channels
VNO or VNC = 1.8 V, 0.8 V,
ICOM = –100 mA, switch ON, and
VCC = 2.25 V (see Figure 12)
TA = 25°C
Δron
ON-state resistance
flatness
ron(flat)
TA = –40°C to 85°C
1.6
0.15
TA = –40°C to 85°C
VNO or VNC = 0.8 V, 1 V, 1.8 V,
ICOM = –100 mA, switch ON, and
VCC = 2.25 V (see Figure 12)
TA = 25°C
0.2
0.2
0 ≤ (VNO or VNC) ≤ VCC, ICOM = –100 mA, switch ON,
VCC = 2.25 V, and TA = 25°C (see Figure 12)
0.25
0.5
VNO = 0.5 V, 2.2 V, VCOM = 2.2 V, 0.5 V,
VNC = open, or VNC = 0.5 V, 2.2 V,
VCOM = 2.2 V, 0.5 V, VNO = open, switch
OFF, and VCC = 2.75 V (see Figure 13)
TA = 25°C
–20
NO and NC OFF
leakage current
TA = –40°C to 85°C
–50
50
INO(PWROFF),
INC (PWROFF)
NO and NC
PWROFF leakage
current
VNO or VNC = 0 V to 2.75 V, VCOM = 2.75
V to 0 V, switch OFF, and VCC = 0 V
(see Figure 13)
TA = 25°C
–10
10
TA = –40°C to 85°C
–10
10
–20
INO(ON)
VNO = 0.5 V, 2.2 V, VNC and
VCOM = open, or VNC = 2.2 V, 0.5 V, VNO
and VCOM = open, switch ON, and
VCC = 2.75 V (see Figure 14)
TA = 25°C
NC and NO ON
leakage current
COM ON leakage
current
VCOM = 0.5 V, VNO and VNC = open, or
VCOM = 2.2 V, VNO and
VNC = open, switch ON, and
VCC = 2.75 V (see Figure 14)
TA = 25°C
ICOM(ON)
ICOM(PWROFF)
COM OFF leakage
current
VNO or VNC = 0 V to 2.75 V, VCOM = 2.75
V to 0 V, and VCC = 0 V (see Figure 13)
(1)
8
Ω
0.6
INO(OFF),
INC (OFF)
TA = –40°C to 85°C
Ω
0.4
TA = –40°C to 85°C
TA = –40°C to 85°C
Ω
2
2
–100
–20
20
µA
20
100
2
nA
nA
20
–100
100
TA = 25°C
–10
10
TA = –40°C to 85°C
–10
10
nA
µA
The algebraic convention (whereby the most negative value is a minimum and the most positive value is a maximum)
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Electrical Characteristics – 2.5-V Supply (continued)
VCC = 2.25 V to 2.75 V and TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DIGITAL CONTROL INPUT (IN)
VIH
Input logic high
VCC = 2.75 V and TA = –40°C to 85°C
1.05
5.5
V
VIL
Input logic low
VCC = 2.75 V and TA = –40°C to 85°C
0
0.65
V
IIH,
IIL
Input leakage
current
VIN = 1.95 V or 0, VCC = 2.75 V, and TA = –40°C to 85°C
–0.05
0.5
µA
rIN
Input resistance
VIN = 1.95 V, VCC = 2.75 V, and TA = –40°C to 85°C
Turnon time
VCOM = VCC, RL = 50 Ω, and CL= 35 pF
(see Figure 16)
6
MΩ
DYNAMIC
tON
tOFF
Turnoff time
VCOM = VCC, RL = 50 Ω, and CL = 35 pF
(see Figure 16)
VCC = 2.5 V and
TA = 25°C
97
170
ns
VCC = 2.25 V and
TA = –40°C to 85°C
175
VCC = 2.5 V and
TA = 25°C
80
155
ns
VCC = 2.25 V and
TA = –40°C to 85°C
160
VCC = 2.5 V and
TA = 25°C
5
VCC = 2.25 V and
TA = –40°C to 85°C
5
18
35
Break-before-make
time
VCOM = VCC , RL = 50 Ω, and CL = 35 pF
(see Figure 17)
QC
Charge injection
VGEN = 0, RGEN = 0, CL = 1 nF, VCC = 2.5 V, and TA = 25°C
(see Figure 21)
82
pC
CNO(OFF)
NO OFF
capacitance
VNO = VCC or GND, switch OFF, VCC = 2.5 V, and TA = 25°C
(see Figure 15)
29
pF
CNC(ON),
CNO(ON)
NC and NO ON
capacitance
VNC or VNO = VCC or GND, switch ON, VCC = 2.5 V,
and TA = 25°C (see Figure 15)
116
pF
CCOM(ON)
COM ON
capacitance
VCOM = VCC or GND, switch ON, VCC = 2.5 V, and TA = 25°C
(see Figure 15)
116
pF
CI
Digital input
capacitance
VIN = VCC or GND, VCC = 2.5 V, and TA = 25°C
(see Figure 15)
3
pF
BW
Bandwidth
RL = 50 Ω, switch ON, VCC = 2.5 V, and TA = 25°C
(see Figure 18)
54
MHz
OISO
OFF isolation
RL = 50 Ω, f = 1 MHz, VCC = 2.5 V, and TA = 25°C
(see Figure 19)
–63
dB
XTALK
Crosstalk
RL = 50 Ω, f = 1 MHz, VCC = 2.5 V, and TA = 25°C
(see Figure 20)
–63
dB
THD
Total harmonic
distortion
RL = 600 Ω, CL = 50 pF, VCC = 2.5 V, f = 20 Hz to 20 kHz, and
TA = 25°C (see Figure 22)
Positive supply
current
VIN = 1.95 V or GND, VCC = 2.75 V, and TA = –40°C to 85°C
tBBM
ns
40
0.008%
SUPPLY
ICC
10
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6.8 Typical Characteristics
1.2
1.2
TA = 85°C
1.0
1.0
0.8
TA = 25°C
ron (Ω)
ron (Ω)
0.8
0.6
0.4
TA = 85°C
0.6
TA = 25°C
0.4
TA = –40°C
TA = –40°C
0.2
0.2
0.0
0.0
1.1
2.3
VCOM (V)
0.0
0.0
4.5
3.4
(VCC = 2.25 V)
1.1
2.3
VCOM (V)
4.5
3.4
(VCC = 3 V)
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM
1.2
6.0
1.0
5.0
0.8
4.0
0.6
TA = 25°C
0.4
0.2
I+ (μA)
ron (Ω)
Control input (IN) high
TA = 85°C
Control input (IN) low
3.0
2.0
1.0
TA = –40°C
0.0
0.0
0.0
1.1
2.3
0.0
4.5
3.4
1.0
2.0
VCOM (V)
3.0
VCC (V)
4.0
5.0
(TA = 25°C)
(VCC = 4.5 V)
Figure 4. ICC vs VCC
Figure 3. ron vs VCOM
200
185
180
tON (NO)
165
tON/tOFF (ns)
160
tON/tOFF (ns)
140
tOFF (NC)
120
100
80
tON (NC)
60
0
0
1
105
85
2
3
4
5
6
25
–40
–20
0
20
40
60
80
100
Temperature (°C)
V+ (V)
Figure 5. tON/tOFF vs Supply Voltage
10
tOFF (NO)
tON (NO)
45
tOFF (NO)
20
125
65
40
tOFF (NC)
tON (NC)
145
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Figure 6. tON/tOFF vs Temperature
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Typical Characteristics (continued)
20
0
10
–2
V+ = 5 V
–4
–10
Gain (dB)
QC (pC)
0
V+ = 3 V
–20
V+ = 2.5 V
–30
–40
–6
–8
–10
–50
–12
–60
0.0
1.0
2.0
3.0
4.0
5.0
–14
6.0
0.1
1
VCOM (V)
Attenuation (dB)
Attenuation (dB)
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
1
10
100
1000
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
1
0.1
Frequency (MHz)
10
100
1000
Frequency (MHz)
Figure 9. OFF Isolation vs Frequency
THD (%)
1000
Figure 8. Gain vs Frequency
Figure 7. Charge Injection (QC) vs VCOM
0.1
10
100
Frequency (MHz)
Figure 10. Crosstalk vs Frequency
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
V+ = 2.5 V
V+ = 3 V
V+ = 5 V
10
100
1000
10000
100000
Frequency (Hz)
Figure 11. Total Harmonic Distortion (THD) vs Frequency
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7 Parameter Measurement Information
VCC
VNO NO
COM
+
VCOM
Channel ON
r on =
VIN
ICOM
IN
VCOM VNO
I COM
VIN = VIH or VIL
+
GND
Figure 12. ON-State Resistance (ron)
VCC
VNO NO
COM
+
VCOM
+
VIN
OFF-State Leakage Current
Channel OFF
VIN = VIH or VIL
IN
+
GND
Figure 13. OFF-State Leakage Current (ICOM(OFF), INC(OFF), ICOM(PWROFF), INC(PWR(FF))
VCC
VNO NO
COM
+
VIN
VCOM
ON-State Leakage Current
Channel ON
VIN = VIH or VIL
IN
+
GND
Figure 14. ON-State Leakage Current (ICOM(ON), INC(ON))
12
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Parameter Measurement Information (continued)
VCC
VNO
NO
Capacitance
Meter
VBIAS = VCC or GND and
COM
COM
VIN
IN
VIN = VIH or VIL
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
VBIAS
GND
Figure 15. Capacitance (CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON))
VCC
NO
VCOM
VIN
Logic
Input(1)
VNO
TEST
RL
CL
VCOM
tON
50 Ω
35 pF
VCC
tOFF
50 Ω
35 pF
VCC
COM
CL(2)
IN
GND
RL
VCC
Logic
Input
(VIN )
50%
50%
0
tON
tOFF
Switch
Output
(VNO)
90%
90%
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf
< 5 ns.
B.
CL includes probe and jig capacitance.
Figure 16. Turnon (tON) and Turnoff Time (tOFF)
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Parameter Measurement Information (continued)
VCC
NC or NO
VIO
Logic
Input
(VIN )
VNC or VNO
VCOM
50%
0
COM
NC or NO
CL(2)
RL
IN
VIN
Switch
Output
(VCOM)
90%
90%
tBBM
Logic
Input(1)
VNC or VNO = VCC /2
RL = 50 Ω
CL = 35 pF
GND
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf
< 5 ns.
B.
CL includes probe and jig capacitance.
Figure 17. Break-Before-Make Time (tBBM)
VCC
Network Analyzer
50 Ω
VNO
NO
Channel ON: NO to COM
COM
VCOM
Source
Signal
VIN = VIH or VIL
Network Analyzer Setup
50 Ω
VIN
IN
+
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
GND
DC Bias = 350 mV
Figure 18. Bandwidth (BW)
VCC
Network Analyzer
50 Ω
VNO
NO
Channel OFF: NO to COM
COM
50 Ω
Source
Signal
VCOM
VIN = VIH or VIL
Network Analyzer Setup
50 Ω
VIN
+
IN
Source Power = 0 dBm
(632-mV P-P at 50- Ω load)
GND
DC Bias = 350 mV
Figure 19. OFF Isolation (OISO)
14
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Parameter Measurement Information (continued)
VCC
Network Analyzer
Channel ON: NC to COM
50 Ω
VNC
Channel OFF: NO to COM
NC
VCOM
Source
Signal
VNO
NO
+
Network Analyzer Setup
50 Ω
IN
VIN
50 Ω
VIN = VCC or GND
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
GND
DC Bias = 350 mV
Figure 20. Crosstalk (XTALK)
VCC
RGEN
VGEN
Logic
Input
OFF
(VIN )
VIH
ON
OFF V
IL
NO
COM
+
VCOM
VCOM
∆VCOM
CL(1)
VIN
VGEN = 0 to VCC
IN
Logic
Input(2)
RGEN = 0
CL = 1 nF
QC = CL X ∆VCOM
VIN = VIH or VIL
GND
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf
< 5 ns.
B.
CL includes probe and jig capacitance.
Figure 21. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = VCC P-P
VIN = VIH or VIL
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
VCC /2
Audio Analyzer
NO
Source
Signal
COM
CL(1)
600 Ω
VIN
IN
600 Ω
−VCC /2
A.
CL includes probe and jig capacitance.
Figure 22. Total Harmonic Distortion (THD)
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8 Detailed Description
8.1 Overview
The TS5A12301E device is a bidirectional, 1-channel, 1:2 mux, or single-pole double-throw (SPDT) analog
switch. This switch offers low ON-state resistance and excellent THD performance, which makes it great for
interfacing with an ADC.
8.2 Functional Block Diagram
NC
VCC
COM
GND
IN
NO
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8.3 Feature Description
8.3.1 Isolation
Isolation in power-down mode prevents current leakage through the device's signal path when VCC = 0 V. This
allows signals to be present on the COM, NO, or NC pins before the device is powered up without damaging the
device.
8.3.2 1.8-V Compatible Logic
The TS5A12301E supports 1.8-V logic irrespective to the supply voltage applied to the IC.
8.3.3 Integrated Control Input Pulldown
There is an integrated 6-MΩ pulldown resistor on the digital control input pin (IN) to keep the device in a known
logic state during power up without needing an external component.
8.4 Device Functional Modes
Table 1 lists the functional modes of the TS5A12301E.
Table 1. Function Table
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
L or Open
ON
OFF
H
OFF
ON
IN
16
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The switch is bidirectional, so the NO, NC, and COM pins may be used as either inputs or outputs.
9.2 Typical Application
5V
0.1 …F
GND
Vcc
NO
Device 1
NC
Device 2
COM
TS5A12301E
GPU
GPIO
IN
GND
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Figure 23. Application Schematic
9.2.1 Design Requirements
This TS5A12301E application may be properly operated without any external components. Unused pins (for
example, COM, NC, and NO) may be left floating. Digital control pin (IN) has an integrated 6-MΩ pulldown
resistor, so no external component is required to keep the logic pin in a known state.
9.2.2 Detailed Design Procedure
To ensure proper performance, keep all signals passing through the switch within the ranges specified in
Recommended Operating Conditions.
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Typical Application (continued)
9.2.3 Application Curve
1.2
1.0
ron (Ω)
0.8
0.6
TA = 25°C
0.4
0.2
TA = 85°C
TA = –40°C
0.0
0.0
1.1
2.3
VCOM (V)
4.5
3.4
VCC = 4.5 V
Figure 24. ron vs VCOM
10 Power Supply Recommendations
The TS5A12301E does not have power sequencing requirements. If there is a voltage present on the COM, NC,
and NO pins before power is supplied to the VCC pin, the isolation feature in power-down mode (VCC = 0)
protects the device and signal path.
Although it is not required, power-supply bypassing improves noise margin and prevents switching noise
propagation from the VCC supply to other components. A 0.1-µF capacitor, connected from VCC to GND, is
adequate for most applications.
11 Layout
11.1 Layout Guidelines
High-speed switches require proper layout and design procedures for optimum performance. Reduce stray
inductance and capacitance by keeping traces short and wide. Ensure that bypass capacitors are placed as
close to the device as possible. Use large ground planes where possible.
11.2 Layout Example
Via to power plane
To device 1
Vcc
NC
COM
GND
IN
NO
Via to ground plane
To common signal
To system controller
To device 2
Figure 25. TS5A12301E Layout
18
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12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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30-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS5A12301EYFPR
ACTIVE
DSBGA
YFP
6
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
(3W2, 3WN)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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