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TS5A23159
SCDS201H – AUGUST 2005 – REVISED FEBRUARY 2015
TS5A23159 1-Ω 2-Channel SPDT Analog Switch
5-V / 3.3-V 2-Channel 2:1 Multiplexer / Demultiplexer
1 Features
3 Description
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The TS5A23159 is a bidirectional 2-channel singlepole double-throw (SPDT) switch that is designed to
operate from 1.65 V to 5.5 V. The device offers low
ON-state resistance and excellent ON-state
resistance matching with the break-before-make
feature which prevents signal distortion during the
transferring of a signal from one channel to another.
The device has an excellent total harmonic distortion
(THD) performance and consumes very low power.
These features make this device suitable for a wide
variety of portable applications including cell phones,
audio devices, and instrumentation.
1
•
Isolation in Power-Down Mode, VCC = 0
Specified Break-Before-Make Switching
Low ON-State Resistance (1 Ω)
Control Inputs are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
Supports Analog and Digital Signals
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
Device Information(1)
PART NUMBER
TS5A23159
Cell Phones
PDAs
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data-Acquisition Systems
Communication Circuits
Modems
Hard Drives
Computer Peripherals
Wireless Terminals and Peripherals
BODY SIZE (NOM)
3.00 mm × 3.00 mm
UQFN (10)
1.50 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
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PACKAGE
VSSOP (10)
Simplified Schematic
SPDT
NC1
COM1
NO1
IN1
NC2
COM2
NO2
IN2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS5A23159
SCDS201H – AUGUST 2005 – REVISED FEBRUARY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
8
1
1
1
2
3
3
Absolute Maximum Ratings ...................................... 3
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics for 5-V Supply .................. 5
Electrical Characteristics for 3.3-V Supply ............... 7
Electrical Characteristics for 2.5-V Supply ............... 9
Electrical Characteristics for 1.8-V Supply ............. 11
Typical Characteristics ............................................ 13
Parameter Measurement Information ................ 16
Detailed Description ............................................ 21
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
21
21
21
21
Application and Implementation ........................ 22
9.1 Application Information............................................ 22
9.2 Typical Application ................................................. 22
10 Power Supply Recommendations ..................... 23
11 Layout................................................................... 24
11.1 Layout Guidelines ................................................. 24
11.2 Layout Example .................................................... 24
12 Device and Documentation Support ................. 25
12.1 Trademarks ........................................................... 25
12.2 Electrostatic Discharge Caution ............................ 25
12.3 Glossary ................................................................ 25
13 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision G (August 2013) to Revision H
•
Page
Added ESD Ratings table, Recommended Operating Conditions table, Thermal Information table, Feature
Description section, Device Functional Modes, Application and Implementation section, Power Supply
Recommendations section, Layout section, Device and Documentation Support section, and Mechanical,
Packaging, and Orderable Information section ..................................................................................................................... 1
Changes from Revision F (September 2010) to Revision G
Page
•
Aligned package description throughout datasheet................................................................................................................ 1
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Removed Ordering Information table. .................................................................................................................................... 1
2
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SCDS201H – AUGUST 2005 – REVISED FEBRUARY 2015
5 Pin Configuration and Functions
RSE Package
10-Pin UQFN
Top View
DGS Package
10-Pin VSSOP
Top View
COM1
IN1
1
NO1
2
GND
NO2
10
3
9
NC1
IN1
1
10
VCC
NO1
2
9
8
NC1
GND
3
8
VCC
NO2
4
7
NC2
IN2
5
6
COM2
7
4
5
6
NC2
COM2
COM1
IN2
Pin Functions
PIN
NO.
I/O
NAME
DESCRIPTION
1
IN1
I
2
NO1
I/O
Digital control to connect COM to NO or NC
Normally open
3
GND
—
Ground
4
NO2
I/O
Normally open
5
IN2
I
6
COM2
I/O
Digital control to connect COM to NO or NC
Common
7
NC2
I/O
Normally closed
8
VCC
—
Power supply
9
NC1
I/O
Normally closed
10
COM1
I/O
Common
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
VCC
Supply voltage (3)
VNC
VNO
VCOM
Analog voltage (3)
IK
Analog port diode current
INC
INO
ICOM
On-state switch current
VIN
Digital input voltage (3)
IIK
Digital input clamp current
ICC
Continuous current through VCC
IGND
Continuous current through GND
Tstg
Storage temperature
(1)
(2)
(3)
(4)
(5)
(6)
(4) (5)
On-state peak switch current (6)
VNC, VNO, VCOM < 0
VNC, VNO, VCOM = 0 to VCC
(4)
VI < 0
MIN
MAX
UNIT
–0.5
6.5
V
–0.5
VCC + 0.5
V
–50
mA
–200
200
–400
400
–0.5
6.5
–50
mA
V
mA
100
mA
–100
100
mA
–65
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Pulse at 1-ms duration < 10% duty cycle
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TS5A23159
SCDS201H – AUGUST 2005 – REVISED FEBRUARY 2015
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6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC
Supply LC Voltage
0
5.5
VNC
VNO
VCOM
Analog voltage
0
VCC
VIN
Digital input voltage range
UNIT
V
0
VCC
6.4 Thermal Information
TS5A23159
THERMAL METRIC (1)
DGS (VSSOP)
RSE (UQFN)
10 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
203.9
180.8
RθJC(top)
Junction-to-case (top) thermal resistance
88.3
117.8
RθJB
Junction-to-board thermal resistance
123.9
98.6
ψJT
Junction-to-top characterization parameter
2.1
6.8
ψJB
Junction-to-board characterization parameter
122.5
98.4
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
—
(1)
4
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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SCDS201H – AUGUST 2005 – REVISED FEBRUARY 2015
6.5 Electrical Characteristics for 5-V Supply
VCC = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
TA
VCC
MIN
TYP MAX
0
VCC
UNIT
ANALOG SWITCH
VCOM
VNO
VNC
Analog signal range
Rpeak
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ VCC, Switch ON,
ICOM = –100 mA,
See Figure 14
25°C
Ron
ON-state
resistance
VNO or VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
25°C
ΔRon
ON-state
resistance match
between
channels
VNO or VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
Ron(flat)
ON-state
resistance
flatness
INO(OFF),
INC(OFF)
NC, NO
OFF leakage current
INC(PWROFF),
INO(PWROFF)
Full
Full
0.8
4.5 V
1.5
0.7
4.5 V
0 ≤ (VNO or VNC) ≤ VCC, Switch ON,
ICOM = –100 mA,
See Figure 14
VNO or VNC = 1 V, 1.5
V,
2.5 V,
ICOM = –100 mA,
VNC or VNO = 1 V,
VCOM = 1 V to 4.5 V,
or
VNC or VNO = 4.5 V,
VCOM = 1 V to 4.5 V,
Switch OFF,
See Figure 15
VNC or VNO = 0 to 5.5
V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 15
0.05
4.5 V
INO(ON),
INC(ON)
NC, NO
ON leakage
current
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 4.5 V,
VCOM = Open,
Switch ON,
See Figure 16
ICOM(PWROFF)
COM
OFF leakage
current
VNC or VNO = 0 to 5.5
V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 15
ICOM(ON)
COM
ON leakage
current
VNC or VNO = Open,
VCOM = 1 V,
or
VNC or VNO = Open,
VCOM = 4.5 V,
Switch ON,
See Figure 16
0.1
4.5 V
–20
5.5 V
25°C
25°C
Full
Ω
20
2
nA
1
20
2
μA
20
100
0.1
nA
1
20
–20
–20
5.5 V
0.2
–100
–1
0V
25°C
Full
0.25
100
–20
–20
5.5 V
2
–100
–1
0V
25°C
Full
Ω
0.25
25°C
Full
Ω
0.15
Full
Full
Ω
0.1
0.1
25°C
25°C
Switch ON,
See Figure 14
0.9
1.1
25°C
Full
1.1
V
μA
20
nA
–100
100
2.4
5.5
V
Full
0
0.8
V
25°C
–2
2
–100
100
DIGITAL CONTROL INPUTS (IN1, IN2) (2)
VIH
Input logic high
VIL
Input logic low
IIH, IIL
Full
Input leakage current
VIN = 5.5 V or 0
Turnon time
VCOM = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Turnoff time
VCOM = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Full
5.5 V
nA
DYNAMIC
tON
tOFF
(1)
(2)
25°C
5V
1
Full
4.5 V
to
5.5 V
1
25°C
5V
1
Full
4.5 V
to
5.5 V
1
8
13
16.5
5
ns
8
8
ns
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
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Electrical Characteristics for 5-V Supply (continued)
VCC = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
CL = 35 pF,
See Figure 19
TA
VCC
MIN
25°C
5V
1
Full
4.5 V
to
5.5 V
1
TYP MAX
5.5
UNIT
13
tBBM
Break-before-make time
VNC = VNO = VCC,
RL = 50 Ω,
QC
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
5V
–7
pC
CNC(OFF),
CNO(OFF)
NC, NO
OFF
capacitance
VNC or VNO = VCC or
GND,
Switch OFF,
See Figure 17
25°C
5V
18
pF
CNC(ON),
CNO(ON)
NC, NO
ON
capacitance
VNC or VNO = VCC or
GND,
Switch ON,
See Figure 17
25°C
5V
55
pF
CCOM(ON)
COM
ON
capacitance
VCOM = VCC or GND,
Switch ON,
See Figure 17
25°C
5V
54.5
pF
CI
Digital input
capacitance
VIN = VCC or GND,
See Figure 17
25°C
5V
2
pF
BW
Bandwidth
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
5V
100
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
5V
–64
dB
XTALK
Crosstalk
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
5V
–64
dB
THD
Total
harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20
kHz,
See Figure 24
25°C
5V
0.004%
Positive
supply
current
VIN = VCC or GND,
Switch ON or
OFF
14
ns
SUPPLY
ICC
6
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25°C
Full
10
5.5 V
50
750
nA
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SCDS201H – AUGUST 2005 – REVISED FEBRUARY 2015
6.6 Electrical Characteristics for 3.3-V Supply
VCC = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
TA
VCC
MIN
TYP MAX
0
VCC
UNIT
ANALOG SWITCH
VCOM, VNO,
VNC
Analog signal
range
Rpeak
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ VCC,
ICOM = –100 mA,
Switch ON,
See Figure 14
25°C
Ron
ON-state
resistance
VNO or VNC = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
25°C
ΔRon
ON-state
resistance
match
between
channels
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
0 ≤ (VNO or VNC) ≤ VCC,
ICOM = –100 mA,
Switch ON,
See Figure 14
Ron(flat)
ON-state
resistance
flatness
INO(OFF),
INC(OFF)
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
Full
Full
1.3
3V
2
1.2
3V
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
VNC or VNO = 1 V,
VCOM = 1 V to 3 V,
or
VNC or VNO = 3 V,
VCOM = 1 V to 3 V,
Switch OFF,
See Figure 15
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 15
0.1
3V
NC, NO
ON leakage
current
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 3 V,
VCOM = Open,
Switch ON,
See Figure 16
ICOM(PWROFF)
COM
OFF leakage
current
VNC or VNO = 3.6 V to 0,
VCOM = 0 to 3.6 V,
Switch OFF,
See Figure 15
ICOM(ON)
COM
ON leakage
current
VNC or VNO = Open,
VCOM = 1 V,
or
VNC or VNO = Open,
VCOM = 3 V,
Switch ON,
See Figure 16
Ω
Ω
0.15
Ω
3V
Full
25°C
INO(ON),
INC(ON)
Ω
0.15
0.2
25°C
25°C
1.5
1.7
25°C
Full
1.6
V
Full
25°C
Full
–20
3.6 V
0V
25°C
Full
25°C
Full
–1
3.6 V
0.2
1
15
2
–20
0.2
μA
nA
1
15
2
nA
10
20
–15
–10
20
50
–15
–1
0V
25°C
Full
–50
–10
3.6 V
2
μA
10
–20
20
nA
DIGITAL CONTROL INPUTS (IN1, IN2) (2)
VIH
Input logic high
Full
2
5.5
V
VIL
Input logic low
Full
0
0.8
V
Input leakage
current
VIN = 5.5 V or 0
25°C
–2
2
–20
20
tON
Turnon time
VCOM = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tOFF
Turnoff time
VCOM = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tBBM
Break-beforemake time
VNC = VNO = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
IIH, IIL
Full
3.6 V
nA
DYNAMIC
(1)
(2)
25°C
3.3 V
5
Full
3 V to
3.6 V
3
25°C
3.3 V
1
Full
3 V to
3.6 V
1
25°C
3.3 V
1
Full
3 V to
3.6 V
1
11
19
22
5
9
9
7
ns
ns
17
20
ns
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
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Electrical Characteristics for 3.3-V Supply (continued)
VCC = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
TA
VCC
MIN
TYP MAX
UNIT
QC
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
3.3 V
–4
pC
CNC(OFF),
CNO(OFF)
NC, NO
OFF
capacitance
VNC or VNO = VCC or GND,
See Figure 17
Switch OFF,
25°C
3.3 V
18
pF
CNC(ON),
CNO(ON)
NC, NO
ON
capacitance
VNC or VNO = VCC or GND,
See Figure 17
Switch ON,
25°C
3.3 V
56
pF
CCOM(ON)
COM
ON
capacitance
VCOM = VCC or GND,
Switch ON,
See Figure 17
25°C
3.3 V
56
pF
CI
Digital input
capacitance
VIN = VCC or GND,
See Figure 17
25°C
3.3 V
2
pF
BW
Bandwidth
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
3.3 V
100
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
3.3 V
–64
dB
XTALK
Crosstalk
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
3.3 V
–64
dB
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20
kHz,
See Figure 24
25°C
3.3 V
0.01%
Positive supply
current
VIN = VCC or GND,
Switch ON or OFF
SUPPLY
ICC
8
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25°C
Full
3.6 V
25
150
nA
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6.7 Electrical Characteristics for 2.5-V Supply (1)
VCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
VCC
MIN
TYP MAX
0
VCC
UNIT
ANALOG SWITCH
VCOM, VNO,
VNC
Analog signal
range
Rpeak
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ VCC,
ICOM = –8 mA,
Switch ON,
See Figure 14
25°C
Ron
ON-state
resistance
VNO or VNC = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 14
25°C
ΔRon
ON-state
resistance
match
between
channels
VNO or VNC = 1.8 V, 0.8 V, Switch ON,
ICOM = –8 mA,
See Figure 14
Ron(flat)
ON-state
resistance
flatness
INO(OFF),
INC(OFF)
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
Full
Full
1.8
2.3 V
2.7
1.5
2.3 V
0 ≤ (VNO or VNC) ≤ VCC,
ICOM = –8 mA,
Switch ON,
See Figure 14
25°C
VNC or VNO = 0.5 V,
VCOM = 0.5 V to 2.3 V,
or
VNC or VNO = 2.2 V,
VCOM = 0.5 V to 2.3 V,
25°C
Switch OFF,
See Figure 15
VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
Switch OFF,
See Figure 15
INO(ON),
INC(ON)
NC, NO
ON leakage
current
VNC or VNO = 0.5 V,
VCOM = Open,
or
VNC or VNO = 2.2 V,
VCOM = Open,
Switch ON,
See Figure 16
ICOM(PWROFF)
COM
OFF leakage
current
VNC or VNO = 2.7 V to 0,
VCOM = 0 to 2.7 V,
Switch OFF,
See Figure 15
ICOM(ON)
COM
ON leakage
current
VNC or VNO = Open,
VCOM = 0.5 V,
or
VNC or VNO = Open,
VCOM = 2.2 V,
Switch ON,
See Figure 16
0.15
2.3 V
25°C
Full
2.3 V
0V
0.6
1
2
20
2.7 V
–1
0.1
1.0
10
2
–20
Ω
0.1
μA
nA
1
10
2
nA
10
20
–10
–10
2.7 V
50
–10
–1
0V
25°C
Full
–50
–10
25°C
Full
Ω
1
–20
25°C
Full
Ω
0.6
2.3 V
Full
Full
Ω
0.2
0.2
25°C
VNO or VNC = 0.8 V, 1.8 V, Switch ON,
ICOM = –8 mA,
See Figure 14
2
2.4
25°C
Full
2.5
V
μA
10
–20
20
nA
DIGITAL CONTROL INPUTS (IN1, IN2) (2)
VIH
Input logic high
Full
1.8
5.5
V
VIL
Input logic low
Full
0
0.6
V
Input leakage
current
VIN = 5.5 V or 0
25°C
–2
2
–20
20
tON
Turnon time
VCOM = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tOFF
Turnoff time
VCOM = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tBBM
Break-beforemake time
VNC = VNO = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
IIH, IIL
Full
2.7 V
nA
DYNAMIC
(1)
(2)
25°C
2.5 V
5
Full
2.3 V to
2.7 V
5
25°C
2.5 V
2
Full
2.3 V to
2.7 V
2
25°C
2.5 V
1
Full
2.3 V to
2.7 V
1
15
28
32
6
9
10
10
ns
ns
27
30
ns
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, SCBA004.
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Electrical Characteristics for 2.5-V Supply(1) (continued)
VCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
VCC
MIN
TYP MAX
UNIT
QC
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
2.5 V
–3
pC
CNC(OFF),
CNO(OFF)
NC, NO
OFF
capacitance
VNC or VNO = VCC or GND,
See Figure 17
Switch OFF,
25°C
2.5 V
18.5
pF
CNC(ON),
CNO(ON)
NC, NO
ON
capacitance
VNC or VNO = VCC or GND,
See Figure 17
Switch ON,
25°C
2.5 V
56.5
pF
CCOM(ON)
COM
ON
capacitance
VCOM = VCC or GND,
Switch ON,
See Figure 17
25°C
2.5 V
56.5
pF
CI
Digital input
capacitance
VIN = VCC or GND,
See Figure 17
25°C
2.5 V
2
pF
BW
Bandwidth
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
2.5 V
100
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
2.5 V
–64
dB
XTALK
Crosstalk
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
2.5 V
–64
dB
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20
kHz,
See Figure 24
25°C
2.5 V
0.02%
Positive supply
current
VIN = VCC or GND,
Switch ON or OFF
SUPPLY
ICC
10
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Full
2.7 V
10
25
100
nA
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6.8 Electrical Characteristics for 1.8-V Supply
VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
TA
VCC
MIN
TYP MAX
0
VCC
UNIT
ANALOG SWITCH
VCOM, VNO,
VNC
Analog signal
range
Rpeak
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ VCC,
ICOM = –2 mA,
Switch ON,
See Figure 14
25°C
Ron
ON-state
resistance
VNO or VNC = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 14
25°C
ΔRon
ON-state
resistance
match
between
channels
VNO or VNC = 0.6 V, 1.5 V, Switch ON,
ICOM = –2 mA,
See Figure 14
Ron(flat)
ON-state
resistance
flatness
INO(OFF),
INC(OFF)
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
Full
Full
5
1.65 V
15
2
1.65 V
3.5
25°C
0 ≤ (VNO or VNC) ≤ VCC,
ICOM = –2 mA,
Switch ON,
See Figure 14
Full
25°C
VNC or VNO = 0.3 V,
VCOM = 0.3 V to 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V to 1.65 V
25°C
Switch OFF,
See Figure 15
VNC or VNO = 0 to
1.95 V,
VCOM = 1.95 V to 0,
Switch OFF,
See Figure 15
INO(ON),
INC(ON)
NC, NO
ON leakage
current
VNC or VNO = 0.3 V,
VCOM = Open,
or
VNC or VNO = 1.65 V,
VCOM = Open,
Switch ON,
See Figure 16
ICOM(PWROFF)
COM
OFF leakage
current
VNC or VNO = 1.95 V to 0,
VCOM = 0 to 1.95 V,
Switch OFF,
See Figure 15
ICOM(ON)
COM
ON leakage
current
VNC or VNO = Open,
VCOM = 0.3 V,
or
VNC or VNO = Open,
VCOM = 1.65 V,
0.15
1.65 V
Ω
Ω
5
1.65 V
Ω
4.5
Full
Full
–20
1.65 V
25°C
Full
Full
1.95 V
25°C
Full
0.1
–5
2
–5
1.95 V
2
nA
1
5
–10
μA
5
20
0.1
nA
1
5
–20
–1
0V
20
50
–5
25°C
Full
2
–50
–1
0V
25°C
Switch ON,
See Figure 16
Ω
0.4
0.4
25°C
VNO or VNC = 0.6 V, 1.5 V, Switch ON,
ICOM = –2 mA,
See Figure 14
2.5
V
μA
10
–20
20
nA
DIGITAL CONTROL INPUTS (IN1, IN2)
VIH
Input logic high
Full
1.5
5.5
V
VIL
Input logic low
Full
0
0.6
V
Input leakage
current
VIN = 5.5 V or 0
25°C
–2
2
–20
20
Turnon time
VCOM = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Turnoff time
VCOM = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
IIH, IIL
Full
1.95 V
nA
DYNAMIC
tON
tOFF
(1)
25°C
1.8 V
10
Full
1.65 V
to
1.95 V
10
25°C
1.8 V
2
Full
1.65 V
to
1.95 V
2
27.5
48.5
55
6.5
ns
11
12
ns
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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Electrical Characteristics for 1.8-V Supply (continued)
VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
TA
VCC
MIN
TYP MAX
25°C
1.8 V
1
Full
1.65 V
to
1.95 V
1
CL = 1 nF,
See Figure 23
25°C
1.8 V
2
pC
VNC or VNO = VCC or
GND,
Switch OFF,
See Figure 17
25°C
1.8 V
18.5
pF
NC, NO
ON
capacitance
VNC or VNO = VCC or
GND,
Switch ON,
See Figure 17
25°C
1.8 V
56.5
pF
CCOM(ON)
COM
ON
capacitance
VCOM = VCC or GND,
Switch ON,
See Figure 17
25°C
1.8 V
56.5
pF
CI
Digital input
capacitance
VIN = VCC or GND,
See Figure 17
25°C
1.8 V
2
pF
BW
Bandwidth
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
1.8 V
105
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
25°C
1.8 V
–64
dB
XTALK
Crosstalk
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
25°C
1.8 V
–64
dB
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20
kHz,
See Figure 24
25°C
1.8 V
0.06%
Positive supply
current
VIN = VCC or GND,
Switch ON or OFF
tBBM
Break-beforemake time
VNC = VNO = VCC,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
QC
Charge
injection
VGEN = 0,
RGEN = 0,
CNC(OFF),
CNO(OFF)
NC, NO
OFF
capacitance
CNC(ON),
CNO(ON)
18
UNIT
50
55
ns
SUPPLY
ICC
12
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25°C
Full
1.95 V
10
25
50
nA
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6.9 Typical Characteristics
3.5
1.3
2.5
Ron (Ω)
Ron (Ω)
1.1
VCC = 1.8 V
2
VCC = 2.5 V
1.5
VCC = 3 V
1
0.9
0.7
0.5
0.5
0
TA = 85°C
TA = 25°C
TA = −40°C
1.5
TA = 25ºC
3
0.3
VCC = 4.5 V
0.1
0
1
2
3
4
0
1
2
VCOM (V)
VCOM (V)
3
4
Figure 2. Ron vs VCOM (VCC = 3.3 V)
Figure 1. Ron vs VCOM
20
1.0
COM (on)
0.9
0.8
Leakage (nA)
R on (Ω)
0.7
0.6
0.5
0.4
TA = 85°C
TA = 25°C
TA = −40°C
0.3
0.2
1
2
3
4
5
NO/NC (on)
−20
NO/NC (off)
0.1
0
0
−40
−60
6
−40
−20
0
VCOM (V)
COM (on)
Charge Injection (pC)
Leakage (nA)
2500
2000
1500
NO/NC (on)
1000
500
0
−40
−20
0
20
60
80
100
Figure 4. Leakage Current vs Temperature
(VCC = 3.3 V)
3000
−500
−60
40
Temperature (°C)
Figure 3. Ron vs VCOM (VCC = 5 V)
3500
20
40
60
80
100
70
60
50
VCC = 5 V
VCC = 3 V
40
30
20
10
0
−10
−20
−30
0
1
2
3
4
5
6
Bias Voltage (V)
Temperature (°C)
Figure 5. Leakage Current vs Temperature
(VCC = 5 V)
Figure 6. Charge Injection (QC) vs VCOM
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Typical Characteristics (continued)
10
35
tON
30
9
8
tON/tOFF (ns)
tON/tOFF (ns)
25
20
15
10
tOFF
tOFF
7
6
tON
5
4
3
2
5
1
0
0
1
2
3
4
5
0
6
VCC (V)
−40°C
25°C
TA (°C)
Figure 7. TON and TOFF vs Supply Voltage
Figure 8. TON and TOFF vs Temperature (5-V Supply)
2.5
85°C
0
VIN rising
−2
2.0
1.5
Gain (dB)
VIN (V)
−4
VIN falling
1.0
−6
−8
−10
0.5
−12
0.0
0
1
2
3
4
5
−14
0.1
6
1
VCC (V)
0
0.010
−10
0.009
−20
0.008
−30
0.007
−40
−50
−60
V+ = 3.3 V
0.006
0.005
V+ = 5 V
0.003
−80
0.002
1
10
Frequency (MHz)
100
Figure 11. Off Isolation vs Frequency
14
1000
0.004
−70
−90
0.1
100
Figure 10. Bandwidth (VCC = 5 V)
THD (%)
Attenuation (dB)
Figure 9. Logic-Level Threshold vs VCC
10
Frequency (MHz)
1000
0.001
0
10
100
1000
Frequency (Hz)
10000
100000
Figure 12. Total Harmonic Distortion vs Frequency
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Typical Characteristics (continued)
250
200
ICC (nA)
150
100
50
0
-50
-40 °C
25°C
85°C
TA (°C)
Figure 13. Power-Supply Current vs Temperature (VCC = 5 V)
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7 Parameter Measurement Information
V+
VNC NC
COM
+
VCOM
Channel ON
VNO NO
r on –
IN
VI
ICOM
VCOM
VNO or VNC
Ω
I COM
VI = VIH or VIL
+
GND
Figure 14. ON-State Resistance (Ron)
V+
VNC NC
COM
+
VCOM
+
VNO NO
IN
VI
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
+
GND
Figure 15. OFF-State Leakage Current
(INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), IcOM(PWROFF))
V+
VNC NC
COM
+
VNO NO
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 16. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON))
16
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Parameter Measurement Information (continued)
V+
Capacitance
Meter
VNC
NC
VNO
NO
VBIAS = V+ or GND
VI = V+ or GND
VCOM COM
VBIAS
VI
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
IN
GND
Figure 17. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))
V+
VCOM
NC or NO
VNC or VNO
NC or NO
CL(2)
TEST
RL
CL
VCOM
tON
50Ω
35 pF
V+
tOFF
50Ω
35 pF
V+
COM
RL
IN
VI
CL(2)
Logic
Input(1)
RL
GND
V+
Logic
Input
(VI)
50%
50%
0
tON
tOFF
Switch
Output
(VNC or VNO)
90%
90%
1. All input pulses are supplied by generators having the following characteristics:
PRR 3 10 MHz, ZO = 50 Ω , tr < 5 ns, tf < 5 ns.
2. CL includes probe and jig capacitance.
Figure 18. Turnon (TON) and Turnoff Time (TOFF)
V+
Logic
Input
(VI)
VNC or VNO
NC or NO
VCOM
V+
50%
0
COM
NC or NO
CL(2)
VI
Logic
Input(1)
IN
RL
Switch
Output
(VCOM)
90%
90%
tBBM
VNC or VNO = V+
RL = 50Ω
CL = 35 pF
GND
1. All input pulses are supplied by generators having the following characteristics:
PRR 3 10 MHz, ZO = 50 Ω , tr < 5 ns, tf < 5 ns.
2. CL includes probe and jig capacitance.
Figure 19. Break-Before-Make Time (TBBM)
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Parameter Measurement Information (continued)
V+
Network Analyzer
50 Ω
VNC
NC
Channel ON: NC to COM
COM
Source
Signal
VCOM
VI = V+ or GND
NO
Network Analyzer Setup
IN
VI
50 Ω
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
+
GND
DC Bias = 350 mV
Figure 20. Bandwidth (Bw)
V+
Network Analyzer
Channel OFF: NC to COM
50 Ω
VNC
NC
VI = V+ or GND
COM
Source
Signal
50 Ω
VCOM
NO
Network Analyzer Setup
IN
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
VI
50 Ω
+
GND
DC Bias = 350 mV
Figure 21. Off Isolation (OISO)
V+
Network Analyzer
Channel ON: NC to COM
50 Ω
VNC
Channel OFF: NO to COM
NC
VCOM
Source
Signal
VNO
VI
50 Ω
+
VI = V+ or GND
NO
50 Ω
IN
GND
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
Figure 22. Crosstalk (XTALK)
18
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Parameter Measurement Information (continued)
V+
RGEN
VGEN
Logic
Input
(VI)
OFF
ON
OFF V
IL
NC or NO
COM
+
VIH
VCOM
VCOM
NC or NO
DVCOM
CL(2)
VI
VGEN = 0 to V+
IN
Logic
Input(1)
RGEN = 0
CL = 1 nF
QC = CLΨ ×ΔVCOM
VI = VIH or VIL
GND
1. All input pulses are supplied by generators having the following characteristics:
PRR 3 10 MHz, ZO = 50 Ω , tr < 5 ns, tf < 5 ns.
2. CL includes probe and jig capacitance.
Figure 23. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = VIH or VIL
RL = 600Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
V+
Audio Analyzer
RL
10 F
Source
Signal
10 μF
NO
COM
600 Ω
600
CL(1)
VI
IN
GND
600 Ω
1. CL includes probe and jig capacitance.
Figure 24. Total Harmonic Distortion (THD)
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Parameter Measurement Information (continued)
Table 1. Parameter Description
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNC
Voltage at NC
VNO
Voltage at NO
Ron
Resistance between COM and NC or COM and NO ports when the channel is ON
Rpeak
Peak on-state resistance over a specified voltage range
ΔRon
Difference of Ron between channels in a specific device
Ron(flat)
Difference between the maximum and minimum value of Ron in a channel over the specified range of conditions
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under worstcase input and output conditions
INC(PWROFF)
Leakage current measured at the NC port during the power-down condition, VCC = 0
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worstcase input and output conditions
INO(PWROFF)
Leakage current measured at the NO port during the power-down condition, VCC = 0
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) open
ICOM(PWROFF)
Leakage current measured at the COM port during the power-down condition, VCC = 0
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VIN
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turnon time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning ON.
tOFF
Turnoff time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning OFF.
tBBM
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM. CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
CI
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to
NC). This is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher
harmonics to the magnitude of fundamental harmonic.
ICC
Static power-supply current with the control (IN) pin at VCC or GND
20
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8 Detailed Description
8.1 Overview
The TS5A23159 is a bidirectional 2-channel single-pole double-throw (SPDT) switch that is designed to operate
from 1.65 V to 5.5 V. The device offers low ON-state resistance and excellent ON-state resistance matching with
the break-before-make feature which prevents signal distortion during the transferring of a signal from one
channel to another. The device has an excellent total harmonic distortion (THD) performance and consumes very
low power. These features make this device suitable for a wide variety of portable applications including cell
phones, audio devices, and instrumentation.
8.2 Functional Block Diagram
SPDT
NC1
COM1
NO1
IN1
NC2
COM2
NO2
IN2
8.3 Feature Description
The TS5A23159 is a bidirectional device that has two single-pole, double-throw switches. The two channels of
the switch are contorled independantly by two digital signals; one digital control for each single-pole, doublethrow switch.
8.4 Device Functional Modes
Table 2. Function Table
NC to COM,
COM to NC
NO to COM,
COM to NO
L
ON
OFF
H
OFF
ON
IN
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The switches are bidirectional, so the NO, NC, and COM pins can be used as either inputs or outputs.
9.2 Typical Application
3.3 V
0.1 PF
0.1 PF
VCC
System
Controller
Switch
Control Logic
TS5A23159
2-channel
SPDT
IN1
IN2
NC1
NC2
Port 1
NO1
NO2
Port 2
COM1
Signal Path
COM2
GND
Figure 25. Typical Application Diagram
9.2.1 Design Requirements
Ensure that all of the signals passing through the switch are within the specified ranges in the recommended
operating conditions to ensure proper performance.
9.2.2 Detailed Design Procedure
The TS5A23159 can be properly operated without any external components. However, TI recommends
connecting unused pins to ground through a 50-Ω resistor to prevent signal reflections back into the device. TI
also recommends that the digital control pins (INX) be pulled up to VCC or down to GND to avoid undesired
switch positions that could result from the floating pin.
22
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Typical Application (continued)
9.2.3 Application Curve
1.0
0.9
0.8
R on (Ω)
0.7
0.6
0.5
0.4
TA = 85°C
TA = 25°C
TA = −40°C
0.3
0.2
0.1
0
1
2
3
4
5
6
VCOM (V)
Figure 26. Ron vs VCOM (VCC = 5 V)
10 Power Supply Recommendations
Proper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximum
ratings, because stresses beyond the listed ratings can cause permanent damage to the device. Always
sequence VCC on first, followed by NO, NC, or COM. Although it is not required, power-supply bypassing
improves noise margin and prevents switching noise propagation from the VCC supply to other components. A
0.1-μF capacitor, connected from VCC to GND, is adequate for most applications.
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11 Layout
11.1 Layout Guidelines
High-speed switches require proper layout and design procedures for optimum performance. Reduce stray
inductance and capacitance by keeping traces short and wide. Ensure that bypass capacitors are as close to the
device as possible. Use large ground planes where possible.
11.2 Layout Example
LEGEND
VIA to Power Plane
Polygonal Copper Pour
VIA to GND Plane
To System
To System
1 IN1
COM1 10
To System
Bypass Capacitor
To System
2
NO1
NC1 9
3
GND
VCC 8
4
NO2
NC2 7
5
IN2
COM2 6
VCC
To System
To System
To System
To System
Figure 27. Layout Recommendation
24
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12 Device and Documentation Support
12.1 Trademarks
All trademarks are the property of their respective owners.
12.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS5A23159DGSR
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JEQ, JER)
TS5A23159DGSRG4
ACTIVE
VSSOP
DGS
10
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JEQ, JER)
TS5A23159DGST
ACTIVE
VSSOP
DGS
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JER
TS5A23159DGSTE4
ACTIVE
VSSOP
DGS
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JER
TS5A23159DGSTG4
ACTIVE
VSSOP
DGS
10
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JER
TS5A23159RSER
ACTIVE
UQFN
RSE
10
3000
RoHS & Green NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
(JE7, JEO, JER, JE
V)
TS5A23159RSERG4
ACTIVE
UQFN
RSE
10
3000
RoHS & Green
Level-1-260C-UNLIM
-40 to 85
(JE7, JEO, JER, JE
V)
NIPDAU
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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