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TS5A23167
SCDS195C – MAY 2005 – REVISED MARCH 2019
TS5A23167 0.9-Ω dual SPST analog switch
5-V, 3.3-V 2-channel analog switch
1 Features
3 Description
•
•
•
•
•
•
•
The TS5A23167 is a dual single-pole single-throw
(SPST) analog switch that is designed to operate
from 1.65 V to 5.5 V. The device offers a low ONstate resistance. The device has excellent total
harmonic distortion (THD) performance and
consumes very low power. These features make this
device suitable for portable audio applications.
1
•
Isolation in Powered-Off Mode, V+ = 0
Low ON-State Resistance (0.9 Ω)
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
Device Information(1)
PART NUMBER
TS5A23167
PACKAGE
BODY SIZE (NOM)
VSSOP (8)
2.30 mm × 2.00 mm
DSBGA (8)
1.25 mm × 2.25mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
•
•
•
•
•
•
•
•
•
Cell Phones
PDAs
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data Acquisition Systems
Communication Circuits
Modems
Hard Drives
Computer Peripherals
Wireless Terminals and Peripherals
Simplified Schematic
IN1
IN2
NC1
COM1
NC2
COM2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS5A23167
SCDS195C – MAY 2005 – REVISED MARCH 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
Absolute Maximum Ratings ..................................... 4
ESD Ratings ............................................................ 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics for 5-V Supply ................. 5
Electrical Characteristics for 5-V Supply
(continued) ................................................................. 6
6.7 Electrical Characteristics for 3.3-V Supply ............... 7
6.8 Electrical Characteristics for 3.3-V Supply
(continued) ................................................................. 8
6.9 Electrical Characteristics for 2.5-V Supply ............... 9
6.10 Electrical Characteristics for 2.5-V Supply
(continued) ............................................................... 10
6.11 Electrical Characteristics for 1.8-V Supply ........... 11
6.12 Electrical Characteristics for 1.8-V Supply
(continued) ............................................................... 12
6.13 Typical Characteristics .......................................... 13
7
8
Parameter Measurement Information ................ 15
Detailed Description ............................................ 19
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
19
19
19
19
Application and Implementation ........................ 20
9.1 Application Information............................................ 20
9.2 Typical Application ................................................. 20
10 Power Supply Recommendations ..................... 21
11 Layout................................................................... 21
11.1 Layout Guidelines ................................................. 21
11.2 Layout Example .................................................... 21
12 Device and Documentation Support ................. 22
12.1
12.2
12.3
12.4
12.5
12.6
Device Support......................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
23
23
23
23
23
13 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (January 2019) to Revision C
Page
•
Changed pins NO1 and NO2 To: NC1 and NC2 in the Simplified Schematic ....................................................................... 1
•
Changed pins NO1 and NO2 To: NC1 and NC2 in the Functional Block Diagram ............................................................. 19
•
Changed L From: Off To: On in Table 1 .............................................................................................................................. 19
•
Changed H From: On To: Off in Table 1 ............................................................................................................................. 19
Changes from Revision A (September 2012) to Revision B
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Changed the DSBGA package pin numbers ......................................................................................................................... 3
Changes from Original (May 2005) to Revision A
•
2
Page
Updated package options information .................................................................................................................................... 1
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TS5A23167
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SCDS195C – MAY 2005 – REVISED MARCH 2019
5 Pin Configuration and Functions
DCU Package
8-Pin VSSOP
Top View
YZP Package
8-Pin DSBGA
Bottom View
1
NC1
1
8
V+
CO M1
2
7
IN1
IN2
3
6
CO M2
GND
4
5
NC2
No t to scale
2
A
NC1
V+
B
CO M1
IN1
C
IN2
CO M2
D
GND
NC2
No t to scale
Pin Functions
PIN
NAME
TYPE
DESCRIPTION
DCU NO.
DSBGA NO.
NC1
1
A1
I/O
Normally closed
COM1
2
B1
I/O
Common
IN2
3
C1
GND
GND
4
D1
I
Digital ground
NC2
5
D2
I
Normally closed
COM2
6
C2
I/O
Common
IN1
7
B2
I/O
Digital control pin to connect COM to NC
V+
8
A2
PWR
Digital control pin to connect COM to NC
Power Supply
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TS5A23167
SCDS195C – MAY 2005 – REVISED MARCH 2019
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6 Specifications
6.1 Absolute Maximum Ratings (1)
(2)
over operating free-air temperature range (unless otherwise noted)
V+
Supply voltage range (3)
VNC
VCOM
Analog voltage range (3)
IK
Analog port diode current
INC
ICOM
On-state switch current
VI
Digital input voltage range (3)
IIK
Digital clamp current
I+
Continuous current through V+
IGND
Continuous current through GND
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
(4) (5)
VNC, VCOM < 0
MAX
6.5
UNIT
V
–0.5
V+ + 0.5
V
–50
VNC, VCOM = 0 to V+
On-state peak switch current (6)
MIN
–0.5
(4)
VI < 0
mA
–200
200
–400
400
–0.5
6.5
mA
V
–50
mA
100
mA
–100
100
mA
–65
150
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Pulse at 1-ms duration < 10% duty cycle.
6.2 ESD Ratings
VALUE
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
V(ESD)
(1)
(2)
Electrostatic discharge
(1)
UNIT
+2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
V
+1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VI/O
Input/output voltage
V+
Supply voltage
VI
Control Input Voltage
TA
Operating free-air temperature
MAX
UNIT
0
V+
V
1.65
5.5
V
0
5.5
V
–40
85
°C
6.4 Thermal Information
TS5A23166
THERMAL METRIC (1)
DCU (VSSOP)
YZP (DSBGA)
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
212.2
98.0
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
77.6
1.1
°C/W
RθJB
Junction-to-board thermal resistance
91.7
26.8
°C/W
ΨJT
Junction-to-top characterization parameter
7.1
0.6
°C/W
ΨJB
Junction-to-board characterization parameter
91.1
26.7
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report.
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6.5
SCDS195C – MAY 2005 – REVISED MARCH 2019
Electrical Characteristics for 5-V Supply (1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal range
VCOM,
VNC
Peak ON resistance
rpeak
0 ≤ VNC ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
ron
VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
match between
channels
Δron
VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
0 ≤ VNC ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNC = 1 V, 1.5 V, 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNC = 1 V,
VCOM = 4.5 V,
or
VNC = 4.5 V,
VCOM = 1 V,
Switch OFF,
See Figure 14
VNC = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 14
ON-state resistance
flatness
ron(flat)
INC(OFF)
NC
OFF leakage current
INC(PWROFF)
ICOM(OFF)
COM
OFF leakage current
ICOM(PWROFF)
NC
ON leakage current
COM
ON leakage current
Full
Full
Switch OFF,
See Figure 14
VCOM = 0 to 5.5 V,
VNC = 5.5 V to 0,
Switch OFF,
See Figure 14
0.04
25°C
Full
INC(ON)
Switch ON,
See Figure 15
ICOM(ON)
VCOM = 1 V,
VNC = Open,
or
VCOM = 4.5 V,
VNC = Open,
Switch ON,
See Figure 15
Full
25°C
Full
4.5 V
0.15
0V
5.5 V
0V
5.5 V
0V
–10
0.25
Ω
10
50
4
0.2
10
50
0.4
–50
μA
nA
μA
5
50
0.4
nA
20
150
–50
–5
5.5 V
0.2
–150
–10
20
150
–50
–5
5.5 V
4
–150
0V
25°C
Full
Ω
0.25
25°C
Full
Ω
0.2
Full
Full
Ω
0.1
0.1
25°C
25°C
0.9
1
4.5 V
25°C
VNC = 1 V,
VCOM = Open,
or
VNC = 4.5 V,
VCOM = Open,
0.75
25°C
Full
1.1
1.2
4.5 V
25°C
VCOM = 1 V,
VNC = 4.5 V,
or
VCOM = 4.5 V,
VNC = 1 V,
0.9
4.5 V
V
nA
5
nA
–50
50
2.4
5.5
V
0.8
V
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
(2)
IIH, IIL
Full
VI = 5.5 V or 0
Full
0
25°C
–2
Full
5.5 V
–20
0.3
2
20
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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TS5A23167
SCDS195C – MAY 2005 – REVISED MARCH 2019
6.6
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Electrical Characteristics for 5-V Supply (1) (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
25°C
5V
1
Full
4.5 V to
5.5 V
1
TYP MAX
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Charge injection
QC
VGEN = 0,
RGEN = 0 ,
NC
OFF capacitance
CNC(OFF)
COM
OFF capacitance
CCOM(OFF)
NC
ON capacitance
CNC(ON)
COM
ON capacitance
CCOM(ON)
Digital input
capacitance
CI
4.5
7.5
9
8
ns
25°C
5V
4.5
Full
4.5 V to
5.5 V
11
3.5
CL = 1 nF,
See Figure 21
25°C
5V
6
pC
VNC = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
19
pF
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
18
pF
VNC = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
35.5
pF
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
35.5
pF
VI = V+ or GND,
See Figure 16
25°C
5V
2
pF
13
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
5V
150
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 19
25°C
5V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 20
25°C
5V
–85
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 22
25°C
5V
0.00
5
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
(1)
6
I+
25°C
Full
5.5 V
0.01
0.1
1
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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SCDS195C – MAY 2005 – REVISED MARCH 2019
6.7 Electrical Characteristics for 3.3-V Supply (1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal range
VCOM,
VNC
Peak ON resistance
rpeak
0 ≤ VNC ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
ron
VNC = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
match between
channels
Δron
VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
0 ≤ VNC ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNC = 1 V,
VCOM = 3 V,
or
VNC = 3 V,
VCOM = 1 V,
Switch OFF,
See Figure 14
VNC = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 14
ON-state resistance
flatness
ron(flat)
INC(OFF)
NC
OFF leakage current
INC(PWROFF)
ICOM(OFF)
COM
OFF leakage current
ICOM(PWROFF)
NC
ON leakage current
COM
ON leakage current
INC(ON)
ICOM(ON)
Full
Full
Switch OFF,
See Figure 14
VCOM = 0 to 3.6 V,
VNC = 3.6 V to 0,
Switch OFF,
See Figure 14
0.04
25°C
Full
Switch ON,
See Figure 15
VCOM = 1 V,
VNC = Open,
or
VCOM = 3 V,
VNC = Open,
Switch ON,
See Figure 15
Full
25°C
Full
3V
0.15
–5
3.6 V
0V
3.6 V
0V
0.25
Ω
–5
5
25
0.5
0.1
5
25
0.3
–20
μA
nA
μA
2
20
0.3
nA
5
50
–25
–2
3.6 V
0.1
–50
–5
5
50
–25
–2
3.6 V
0.5
–50
–5
25°C
Full
Ω
0.25
25°C
Full
Ω
0.3
Full
Full
Ω
0.1
0.1
25°C
25°C
1.5
1.7
3V
25°C
VNC = 1 V,
VCOM = Open,
or
VNC = 3 V,
VCOM = Open,
1.1
25°C
Full
1.6
1.8
3V
25°C
VCOM = 1 V,
VNC = 3 V,
or
VCOM = 3 V,
VNC = 1 V,
1.3
3V
V
nA
2
nA
–20
20
2
5.5
V
0.8
V
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage current
(1)
(2)
IIH, IIL
Full
VI = 5.5 V or 0
Full
0
25°C
–2
Full
3.6 V
–20
0.3
2
20
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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6.8 Electrical Characteristics for 3.3-V Supply (1) (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
25°C
3.3 V
1.5
Full
3 V to
3.6 V
1.0
25°C
3.3 V
4.5
Full
3 V to
3.6 V
3
TYP MAX
UNIT
Dynamic
5
9.5
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 21
25°C
3.3 V
6
pC
NC
OFF capacitance
CNC(OFF)
VNC = V+ or GND,
Switch OFF,
See Figure 16
25°C
3.3 V
19.5
pF
COM
OFF capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
3.3 V
18.5
pF
NC
ON capacitance
CNC(ON)
VNC = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
36
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
36
pF
VI = V+ or GND,
See Figure 16
25°C
3.3 V
2
pF
Digital input
capacitance
CI
10
8.5
ns
11
12.5
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
3.3 V
150
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 19
25°C
3.3 V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 20
25°C
3.3 V
–85
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 22
25°C
3.3 V
0.01
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
(1)
8
I+
25°C
Full
3.6 V
0.001
0.05
0.3
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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SCDS195C – MAY 2005 – REVISED MARCH 2019
6.9 Electrical Characteristics for 2.5-V Supply (1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal range
VCOM,
VNC
Peak ON resistance
rpeak
0 ≤ VNC ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
ron
VNC = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
match between
channels
Δron
VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
0 ≤ VNC ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNC = 1 V,
VCOM = 3 V,
or
VNC = 3 V,
VCOM = 1 V,
Switch OFF,
See Figure 14
VNC = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 14
ON-state resistance
flatness
ron(flat)
INC(OFF)
NC
OFF leakage current
INC(PWROFF)
ICOM(OFF)
COM
OFF leakage current
ICOM(PWROFF)
NC
ON leakage current
COM
ON leakage current
INC(ON)
ICOM(ON)
2.3 V
Full
Full
Switch OFF,
See Figure 14
VCOM = 0 to 3.6 V,
VNC = 3.6 V to 0,
Switch OFF,
See Figure 14
0.04
25°C
Full
Switch ON,
See Figure 15
VCOM = 1 V,
VNC = Open,
or
VCOM = 3 V,
VNC = Open,
Switch ON,
See Figure 15
Full
25°C
Full
2.3 V
0.4
–5
2.7 V
0V
2.7 V
0V
0.6
Ω
–2
2
15
0.3
0.05
2
15
0.3
–20
μA
nA
μA
2
20
0.3
nA
5
50
–15
–2
2.7 V
0.05
–50
–2
5
50
–15
–2
2.7 V
0.3
–50
–5
25°C
Full
Ω
0.6
25°C
Full
Ω
0.7
Full
Full
Ω
0.15
0.15
25°C
25°C
2.1
2.4
2.3 V
25°C
VNC = 1 V,
VCOM = Open,
or
VNC = 3 V,
VCOM = Open,
1.2
25°C
Full
2.4
2.6
2.3 V
25°C
VCOM = 1 V,
VNC = 3 V,
or
VCOM = 3 V,
VNC = 1 V,
1.8
2.3 V
V
nA
2
nA
–20
20
1.8
5.5
V
0.6
V
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage current
(1)
(2)
IIH, IIL
Full
VI = 5.5 V or 0
Full
0
25°C
–2
Full
2.7 V
–20
0.3
2
20
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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6.10
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Electrical Characteristics for 2.5-V Supply (1) (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Charge injection
QC
VGEN = 0,
RGEN = 0,
NC
OFF capacitance
CNC(OFF)
COM
OFF capacitance
CCOM(OFF)
NC
ON capacitance
CNC(ON)
COM
ON capacitance
CCOM(ON)
Digital input
capacitance
CI
25°C
2.5 V
2
Full
2.3 V to
2.7 V
1
6
10
12
4.5
8
ns
25°C
2.5 V
Full
2.3 V to
2.7 V
CL = 1 nF,
See Figure 21
25°C
2.5 V
4
pC
VNC = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
19.5
pF
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
18.5
pF
VNC = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
36.5
pF
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
36.5
pF
VI = V+ or GND,
See Figure 16
25°C
2.5 V
2
pF
3
12.5
15
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
2.5 V
150
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 19
25°C
2.5 V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 20
25°C
3.3 V
–85
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 22
25°C
2.5 V
0.02
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
(1)
10
I+
25°C
Full
2.7 V
0.001
0.02
0.25
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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6.11 Electrical Characteristics for 1.8-V Supply (1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted))
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
0
V+
UNIT
Analog Switch
Analog signal range
VCOM,
VNC
Peak ON resistance
rpeak
0 ≤ VNC ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
ron
VNC = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
match between
channels
Δron
VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
0 ≤ VNC ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNC = 1 V,
VCOM = 3 V,
or
VNC = 3 V,
VCOM = 1 V,
Switch OFF,
See Figure 14
VNC = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 14
ON-state resistance
flatness
ron(flat)
INC(OFF)
NC
OFF leakage current
INC(PWROFF)
ICOM(OFF)
COM
OFF leakage current
ICOM(PWROFF)
NC
ON leakage current
COM
ON leakage current
INC(ON)
ICOM(ON)
Full
Full
Switch OFF,
See Figure 14
VCOM = 0 to 3.6 V,
VNC = 3.6 V to 0,
Switch OFF,
See Figure 14
0.04
25°C
Full
Switch ON,
See Figure 15
VCOM = 1 V,
VNC = Open,
or
VCOM = 3 V,
VNC = Open,
Switch ON,
See Figure 15
Full
25°C
Full
1.65 V
1.95 V
0V
1.95 V
0V
1.95 V
25°C
Full
Ω
4.1
22
Ω
27
25°C
Full
Ω
2.8
Full
Full
Ω
0.2
0.2
25°C
25°C
3.9
4.0
1.65 V
25°C
VNC = 1 V,
VCOM = Open,
or
VNC = 3 V,
VCOM = Open,
1.6
25°C
Full
25
30
1.65 V
25°C
VCOM = 1 V,
VNC = 3 V,
or
VCOM = 3 V,
VNC = 1 V,
4.2
1.65 V
V
1.95 V
–5
5
–50
50
–2
2
–10
10
–5
5
–50
50
nA
μA
nA
–2
2
–10
10
–2
2
–20
20
–2
2
–20
20
1.5
5.5
V
0.6
V
μA
nA
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage current
(1)
(2)
IIH, IIL
Full
VI = 5.5 V or 0
Full
0
25°C
–2
Full
1.95 V
–20
0.3
2
20
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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6.12 Electrical Characteristics for 1.8-V Supply (1) (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted))
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX
UNIT
Dynamic
25°C
1.8 V
3
Full
1.65 V to
1.95 V
1
25°C
1.8 V
5
Full
1.65 V to
1.95 V
4
CL = 1 nF,
See Figure 21
25°C
1.8 V
2
pC
VNC = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
19.5
pF
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
18.5
pF
VNC = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
36.5
pF
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
36.5
pF
VI = V+ or GND,
See Figure 16
25°C
1.8 V
2
pF
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Charge injection
QC
VGEN = 0,
RGEN = 0,
NC
OFF capacitance
CNC(OFF)
COM
OFF capacitance
CCOM(OFF)
NC
ON capacitance
CNC(ON)
COM
ON capacitance
CCOM(ON)
Digital input
capacitance
CI
9
18
20
10
ns
15.5
18.5
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
1.8 V
150
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 19
25°C
1.8 V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 20
25°C
1.8 V
–85
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz
See Figure 22
25°C
1.8 V
0.05
5
%
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
(1)
12
I+
25°C
1.95 V
0.00
1
Full
0.01
μA
0.15
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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6.13 Typical Characteristics
1.6
3.5
3.0
1.2
2.5
V+ = 1.8 V
ron (W)
ron (Ω)
1.4
TA = 25_C
2.0
1.5
V+ = 2.5 V
V+ = 3.3 V
1.0
0.8
255C
0.6
–405C
0.4
V+ = 5 V
0.5
855C
1.0
0.2
0.0
0.0
0
1
2
3
4
5
0
6
1
2
Figure 2. ron vs VCOM (V+ = 3.3 V)
Figure 1. ron vs VCOM
70
1.0
60
855C
255C
0.8
ron (W)
Leakage Current (nA)
1.2
–405C
0.6
0.4
0.2
0.0
1
2
3
4
5
ICOM(OFF)
50
40
INO/NC(OFF)
30
20
INO/NC(ON)
10
ICOM(ON)
0
6
25°
TA (°C)
−40°
VCOM (V)
85°
Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
Figure 3. ron vs VCOM (V+ = 5 V)
20
12
15
10
10
V+ = 5 V
V+ = 3 V
tON
8
5
tON/tOFF (ns)
Charge Injection (pC)
4
VCOM (V)
VCOM (V)
0
3
0
−5
tOFF
6
4
2
−10
−15
0
1
2
3
4
5
0
0
1
Bias Voltage (V)
Figure 5. Charge Injection (QC) vs VCOM
2
3
V+ (V)
4
5
6
Figure 6. tON and tOFF vs Supply Voltage
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Typical Characteristics (continued)
10
tOFF
9
tON/tOFF (ns)
8
7
6
tON
5
4
3
2
1
0
-40 °C
25°C
TA (°C)
85°C
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
Figure 8. tON and tOFF vs Temperature (V+ = 5 V)
0
Attenuation (dB)
−20
−40
−60
−80
−100
−120
0.1
Figure 9. Bandwidth (V+ = 5 V)
1
10
Frequency (MHz)
100
1000
Figure 10. OFF Isolation and Crosstalk (V+ = 5 V)
0.010
0.009
THD + (%)
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
0
10
100
1000
Frequency (Hz)
10000
100000
Figure 11. Total Harmonic Distortion vs Frequency
14
Figure 12. Total Harmonic Distortion vs Frequency
(V+ = 5 V)
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Typical Characteristics (continued)
Figure 14. Charge Injection (QC) vs VCOM
Figure 13. Power-Supply Current vs Temperature (V+ = 5 V)
Figure 15. tON and tOFF vs Supply Voltage
7 Parameter Measurement Information
V+
VNO NO
COM
+
VCOM
Channel ON
r on =
VI
ICOM
IN
VCOM – VNO
Ω
I COM
VI = VIH or VIL
+
GND
Figure 16. ON-State Resistance (ron)
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Parameter Measurement Information (continued)
V+
VNO NO
COM
+
VCOM
+
VI
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
GND
Figure 17. OFF-State Leakage Current (ICOM(OFF), INC(OFF), ICOM(PWROFF), INC(PWR(FF))
V+
VNO NO
COM
+
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 18. ON-State Leakage Current (ICOM(ON), INC(ON))
V+
VNO
NO
Capacitance
Meter
VBIAS = V+ or GND
VI = V+ or GND
COM
COM
VI
IN
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
VBIAS
GND
Figure 19. Capacitance (CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON))
16
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Parameter Measurement Information (continued)
V+
NO
VCOM
VI
TEST
RL
CL
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
VNO
VCOM
COM
CL(2)
RL
IN
Logic
Input(1)
V+
Logic
Input
(VI)
GND
50%
50%
0
tON
tOFF
Switch
Output
(VNO)
(1)
All input pulses are supplied by generators having the following characteristics:
PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2)
CL includes probe and jig capacitance.
90%
90%
Figure 20. Turnon (tON) and Turnoff Time (tOFF)
V+
Network Analyzer
50 Ω
VNO
NO
Channel ON: NO to COM
COM
VCOM
VI = VIH or VIL
Source
Signal
Network Analyzer Setup
VI
50 Ω
IN
+
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
GND
DC Bias = 350 mV
Figure 21. Bandwidth (BW)
V+
Network Analyzer
Channel OFF: NO to COM
50 Ω
VNO NO
VI = V+ or GND
COM
Source
Signal
VCOM
50 Ω
Network Analyzer Setup
VI
50 Ω
+
IN
GND
Source Power = 0 dBm
(632-mV P-P at 50- Ω load)
DC Bias = 350 mV
Figure 22. OFF Isolation (OISO)
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Parameter Measurement Information (continued)
V+
Network Analyzer
50 Ω
VNO1
Source
Signal
VNO2
NO1
Channel ON: NO to COM
COM1
NO2
VI
50 Ω
Network Analyzer Setup
50 Ω
COM2
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
IN
+
DC Bias = 350 mV
GND
Figure 23. Crosstalk (XTALK)
V+
RGEN
VIH
OFF
ON
OFF V
IL
NO
COM
+
VGEN
Logic
Input
(VI)
VCOM
VCOM
ΔVCOM
CL(1)
VI
VGEN = 0 to V+
IN
Logic
Input(2)
RGEN = 0
CL = 1 nF
QC = CL × ΔVCOM
VI = VIH or VIL
GND
(1)
CL includes probe and jig capacitance.
(2)
All input pulses are supplied by generators having the following characteristics:
PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
Figure 24. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = V+/2 or −V+/2
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
Audio Analyzer
NO
Source
Signal
COM
CL(1)
600 Ω
VI
IN
600 Ω
−V+/2
(1)
CL includes probe and jig capacitance.
Figure 25. Total Harmonic Distortion (THD)
18
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8 Detailed Description
8.1 Overview
The TS5A23167 is a dual single-pole single-throw (SPST) analog switch that is designed to operate from 1.65 V
to 5.5 V. The device offers a low ON-state resistance. The device has excellent total harmonic distortion (THD)
performance and consumes very low power. These features make this device suitable for portable audio
applications. Table 2 shows the descriptions of each parameter specified in the datasheet.
8.2 Functional Block Diagram
IN1
IN2
NC1
COM1
NC2
COM2
8.3 Feature Description
Tolerant control inputs allow 5-V logic levels to be present on the IN pin at any value of VCC. Low ON-resistance
allows minimal signal distortion through device.
8.4 Device Functional Modes
Table 1 shows the functional modes for TS5A23167.
Table 1. Function Table
IN
NC TO COM,
COM TO NC
L
ON
H
OFF
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TS5A23167 dual SPST analog switch is a basic component that could be used in any electrical system
design. One example application is a gain selector, which is described in the Typical Application section.
9.2 Typical Application
TS5A23167
Figure 26. Gain-Control Circuit for OP Amplifier
9.2.1 Design Requirements
By selecting values of R1 and R2, such that Rx >> ron(x), ron of TS5A23167 can be ignored. The gain of op amp
can be calculated as follow:
Vo / VI = 1+ R|| / R3
R|| = (R1+ron(1)) || (R2+ron(2))
(1)
(2)
9.2.2 Detailed Design Procedure
Place a switch in series with the input of the op amp. Because the op amp input impedance is very large, a
switch on ron(1) is irrelevant.
20
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Typical Application (continued)
9.2.3 Application Curve
160
140
I+ (nA)
120
100
80
60
40
20
0
-40 °C
25°C
TA (°C)
85°C
Figure 27. Power-Supply Current vs Temperature (V+ = 5 V)
10 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in the
Recommended Operating Conditions.
Each VCC terminal should have a good bypass capacitor to prevent power disturbance. For devices with a single
supply, a 0.1-μF bypass capacitor is recommended. If there are multiple pins labeled VCC, then a 0.01-μF or
0.022-μF capacitor is recommended for each VCC because the VCC pins will be tied together internally. For
devices with dual supply pins operating at different voltages, for example VCC and VDD, a 0.1-µF bypass
capacitor is recommended for each supply pin. It is acceptable to parallel multiple bypass capacitors to reject
different frequencies of noise. 0.1-μF and 1-μF capacitors are commonly used in parallel. The bypass capacitor
should be installed as close to the power terminal as possible for best results.
11 Layout
11.1 Layout Guidelines
Reflections and matching are closely related to loop antenna theory, but different enough to warrant their own
discussion. When a PCB trace turns a corner at a 90° angle, a reflection can occur. This is primarily due to the
change of width of the trace. At the apex of the turn, the trace width is increased to 1.414 times its width. This
upsets the transmission line characteristics, especially the distributed capacitance and self–inductance of the
trace — resulting in the reflection. It is a given that not all PCB traces can be straight, and so they will have to
turn corners. Figure 28 shows progressively better techniques of rounding corners. Only the last example
maintains constant trace width and minimizes reflections.
11.2 Layout Example
BETTER
BEST
2W
WORST
1W min.
W
Figure 28. Trace Example
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Device Nomenclature
Table 2. Parameter Description
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNC
Voltage at NC
ron
Resistance between COM and NC ports when the channel is ON
rpeak
Peak on-state resistance over a specified voltage range
ronΔ
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under worst-case
input and output conditions
INC(PWROFF)
Leakage current measured at the NC port during the power-down condition, V+ = 0
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NC) in the OFF state under worstcase input and output conditions
ICOM(PWROFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NC) in the ON state and the output
(NC) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NC) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NC) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance, and ΔVCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NC) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC) is ON
CI
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2).
This is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
22
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Copyright © 2005–2019, Texas Instruments Incorporated
Product Folder Links: TS5A23167
TS5A23167
www.ti.com
SCDS195C – MAY 2005 – REVISED MARCH 2019
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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Product Folder Links: TS5A23167
23
PACKAGE OPTION ADDENDUM
www.ti.com
30-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS5A23167DCUR
ACTIVE
VSSOP
DCU
8
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 85
(JAPQ, JAPR)
TS5A23167DCURG4
ACTIVE
VSSOP
DCU
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JAPR
TS5A23167YZPR
ACTIVE
DSBGA
YZP
8
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
J8N
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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