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TS5A3157
SCDS219B – NOVEMBER 2005 – REVISED MAY 2015
TS5A3157 10-Ω SPDT Analog Switch
1 Features
•
•
•
•
•
•
•
1
•
Low ON-State Resistance (10 Ω)
Control Inputs Are 5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
2 Applications
•
•
•
•
Sample-and-Hold Circuits
Battery-Powered Equipment
Audio and Video Signal Routing
Communication Circuits
3 Description
The TS5A3157 device is a single-pole double-throw
(SPDT) analog switch that is designed to operate
from 1.65 V to 5.5 V. This device can handle both
digital and analog signals, and signals up to V+ can
be transmitted in either direction.
Device Information(1)
PART NUMBER
TS5A3157
PACKAGE
BODY SIZE (NOM)
SOT-23 (6)
2.90 mm × 1.60 mm
SC70 (6)
2.00 mm × 1.25 mm
DSBGA (6)
1.39 mm × 0.89 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Block Diagram
IN
COM
NC
NO
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS5A3157
SCDS219B – NOVEMBER 2005 – REVISED MAY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
8
1
1
1
2
3
4
Absolute Maximum Ratings ..................................... 4
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics for 5-V Supply .................. 5
Electrical Characteristics for 3.3-V Supply................ 6
Electrical Characteristics for 2.5-V Supply ............... 7
Electrical Characteristics for 1.8-V Supply ............... 9
Typical Characteristics ............................................ 11
Parameter Measurement Information ................ 13
Detailed Description ............................................ 17
8.1 Overview ................................................................. 17
8.2 Functional Block Diagram ....................................... 17
8.3 Feature Description................................................. 17
8.4 Device Functional Modes........................................ 17
9
Application and Implementation ........................ 18
9.1 Application Information............................................ 18
9.2 Typical Application ................................................. 18
10 Power Supply Recommendations ..................... 19
11 Layout................................................................... 19
11.1 Layout Guidelines ................................................. 19
11.2 Layout Example .................................................... 20
12 Device and Documentation Support ................. 21
12.1
12.2
12.3
12.4
12.5
12.6
Device Support ....................................................
Documentation Support .......................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
21
22
22
22
22
22
13 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
Changes from Revision A (September 2004) to Revision B
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Removed Ordering Information table. ................................................................................................................................... 1
Changes from Original (August 2004) to Revision A
•
2
Page
Updated document to new TI data sheet format - no specification changes. ....................................................................... 1
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SCDS219B – NOVEMBER 2005 – REVISED MAY 2015
5 Pin Configuration and Functions
DBV and DCK Packages
6-Pin SOT-23 and SC-70
(Top View)
TS5A3157
NO
1
6 IN
GND
2
5
V+
NC
3
4
COM
YZP Package
6-Pin DSBGA
(Bottom View)
NC
3 4
COM
GND
2 5
V+
NO
1 6
IN
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
NO
I/O
Normally open switch port
2
GND
—
Ground
3
NC
I/O
Normally closed switch port
4
COM
I/O
Common switch port
5
V+
—
Power supply
6
IN
I
Switch select. High = COM connected to NO; Low = COM connected to NC.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
UNIT
V+
Supply voltage (3)
–0.5
6.5
V
VNO
VNC
VCOM
Analog voltage (3) (4) (5)
–0.5
V+ + 0.5
V
IK
Analog port diode current
VNC, VNO, VCOM < 0 or VNO, VNC, VCOM >
V+
–50
50
mA
INO
INC
ICOM
On-state switch current
VNC, VNO, VCOM = 0 to V+
–50
50
mA
VI
Digital input voltage (3) (4)
–0.5
6.5
IIK
Digital input clamp current
I+
Continuous current through V+
–100
100
mA
IGND
Continuous current through GND
–100
100
mA
Tstg
Storage temperature
–65
150
°C
(1)
(2)
(3)
(4)
(5)
VI < 0
–50
V
mA
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VI/O
Switch input/output voltage
V+
Supply voltage
VI
Control input voltage
TA
Operating temperature
MIN
MAX
0
V+
UNIT
V
1.65
5.5
V
0
5.5
V
–40
85
°C
6.4 Thermal Information
TS5A3157
THERMAL METRIC (1)
RθJA
(1)
4
Junction-to-ambient thermal resistance
DBV (SOT-23)
DCK (SC-70)
YZP (DSBGA)
6 PINS
6 PINS
6 PINS
206
252
132
UNIT
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics for 5-V Supply
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog Switch
VCOM,
Analog signal
VNO, VNC range
0
ON-state
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –30 mA,
Switch ON,
see Figure 12
ON-state
resistance match
between
channels
VNO or VNC = 3.15 V,
ICOM = –30 mA,
Switch ON,
see Figure 12
ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –30 mA,
Switch ON,
see Figure 12
INO(OFF),
INC(OFF)
NO, NC
OFF leakage
current
VNO or VNC = 1 V,
VCOM = 4.5 V,
or
VNO or VNC = 4.5 V,
VCOM = 1 V,
Switch OFF,
see Figure 13
INO(ON),
INC(ON)
NO, NC
ON leakage
current
VNO = 1 V,
VCOM = Open,
or
VNO = 4.5 V,
VCOM = Open,
Switch ON,
see Figure 14
ICOM(ON)
COM
ON leakage
current
VCOM = 1 V,
VNO or VNC = Open,
or
VCOM = 4.5 V,
VNO or VNC = Open,
ron
Δron
ron(flat)
25°C
Full
5.5
4.5 V
0.15
4.5 V
4
4.5 V
25°C
Full
5.5 V
25°C
Full
5.5 V
25°C
Switch ON,
see Figure 14
Full
5.5 V
V
Ω
0.2
0.3
25°C
Full
10
12
25°C
Full
V+
Ω
5
6
–0.1
0.05
0.1
–0.2
0.1
0.2
–0.1
0.05
0.1
–0.2
0.1
0.2
–0.1
0.05
0.1
–0.2
0.1
0.2
Ω
µA
µA
µA
Digital Control Input (IN)
VIH
Input logic high
Full
V+ × 0.7
5.5
V
VIL
Input logic low
Full
0
V+ × 0.3
V
IIH, IIL
Input leakage
current
VI = 5.5 V or 0
Turnon time
VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
tOFF
Turnoff time
VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
tBBM
Break-beforemake time
VNC = VNO = V+ / 2,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
QC
Charge injection
VGEN = 0,
RGEN = 0,
CNO(OFF), NO, NC
CNC(OFF) OFF capacitance
CNO(ON),
CNC(ON)
CCOM(ON)
25°C
Full
5.5 V
–0.1
0.05
–1
0.1
1
µA
Dynamic
tON
CI
(1)
25°C
5V
1
Full
4.5 V
to
5.5 V
1
25°C
5V
1
Full
4.5 V
to
5.5 V
1
6
8.5
9.5
3.5
6.5
7.5
2
ns
ns
25°C
5V
1.8
Full
4.5 V
to
5.5 V
3
1.8
CL = 0.1 nF,
see Figure 21
25°C
5V
7
pC
VNO or VNC = V+ or GND,
Switch OFF,
see Figure 15
25°C
5V
5.5
pF
NO, NC
ON capacitance
VNO or VNC = V+ or GND,
Switch ON,
see Figure 15
25°C
5V
17.5
pF
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
see Figure 15
25°C
5V
17.5
pF
Digital input
capacitance
VI = V+ or GND,
See Figure 15
25°C
5V
2.8
pF
3.5
ns
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics for 5-V Supply (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
BW
Bandwidth
RL = 50 Ω,
Switch ON,
see Figure 18
25°C
5V
300
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
see Figure 19
25°C
5V
–65
dB
XTALK
Crosstalk
RL = 50 Ω,
f = 10 MHz,
Switch ON,
see Figure 20
25°C
5V
–66
dB
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
see Figure 22
25°C
5V
0.01%
Positive supply
current
VI = V+ or GND,
Switch ON or OFF
Supply
I+
25°C
Full
2.5
5.5 V
5
10
µA
6.6 Electrical Characteristics for 3.3-V Supply
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
VCOM, VNO, Analog signal
VNC
range
0
ON-state
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –24 mA,
Switch ON,
see Figure 12
ON-state
resistance match
between
channels
VNO or VNC = 2.1 V,
ICOM = –24 mA,
Switch ON,
see Figure 12
ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –24 mA,
Switch ON,
see Figure 12
INO(OFF),
INC(OFF)
NO, NC
OFF leakage
current
VNO or VNC = 1 V,
VCOM = 3 V,
or
VNO or VNC = 3 V,
VCOM = 1 V,
Switch OFF,
see Figure 13
INO(ON),
INC(ON)
NO, NC
ON leakage
current
VNO or VNC = 1 V,
VCOM = Open,
or
VNO or VNC = 3 V,
VCOM = Open,
Switch ON,
see Figure 14
ICOM(ON)
COM
ON leakage
current
VCOM = 1 V,
VNO or VNC = Open,
or
VCOM = 3 V,
VNO or VNC = Open,
ron
Δron
ron(flat)
25°C
Full
12
3V
0.2
3V
9
3V
25°C
Full
3.6 V
25°C
Full
3.6 V
25°C
Switch ON,
see Figure 14
Full
3.6 V
V
Ω
0.4
0.3
25°C
Full
20
20
25°C
Full
V+
Ω
11
12
–0.1
0.05
0.1
–0.2
0.1
0.2
–0.1
0.05
0.1
–0.2
0.1
0.2
–0.1
0.05
0.1
–0.2
0.1
0.2
Ω
µA
µA
µA
Digital Control Input (IN)
VIH
Input logic high
Full
V+ × 0.7
5.5
V
VIL
Input logic low
Full
0
V+ × 0.3
V
Input leakage
current
VI = 5.5 V or 0
25°C
–0.1
Turnon time
VCOM = 2 V,
RL = 300 Ω,
IIH, IIL
Full
3.6 V
0.05
–1
0.1
1
µA
Dynamic
tON
(1)
6
CL = 35 pF,
see Figure 16
25°C
3.3 V
3.5
Full
3V
to
3.6 V
1.5
7
9.5
10.5
ns
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics for 3.3-V Supply (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
V+
MIN
TYP
MAX
25°C
3.3 V
1
3.5
6.5
Full
3V
to
3.6 V
1
25°C
3.3 V
2.5
Full
3V
to
3.6 V
2
UNIT
tOFF
Turnoff time
VCOM = 2 V,
RL = 300 Ω,
tBBM
Break-beforemake time
VNC = VNO = V+ / 2,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
QC
Charge injection
VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
see Figure 21
25°C
3.3 V
3
pC
CNO(OFF)
NO, NC
OFF capacitance
VNO or VNC = V+ or GND,
Switch OFF,
see Figure 15
25°C
3.3 V
5.5
pF
CNO(ON)
NO, NC
ON capacitance
VNO or VNC = V+ or GND,
Switch ON,
see Figure 15
25°C
3.3 V
17.5
pF
CCOM(ON)
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
see Figure 15
25°C
3.3 V
17.5
pF
Digital input
capacitance
VI = V+ or GND,
See Figure 15
25°C
3.3 V
2.8
pF
BW
Bandwidth
RL = 50 Ω,
Switch ON,
see Figure 18
25°C
3.3 V
300
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
see Figure 19
25°C
3.3 V
–65
dB
XTALK
Crosstalk
RL = 50 Ω,
f = 10 MHz,
Switch ON,
see Figure 20
25°C
3.3 V
–66
dB
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20
kHz,
see Figure 22
25°C
3.3 V
0.015
%
Positive supply
current
VI = V+ or GND,
Switch ON or OFF
25°C
3.6 V
2.5
CI
CL = 35 pF,
see Figure 16
TA
7.5
3
ns
5
5
ns
Supply
I+
Full
5
10
µA
6.7 Electrical Characteristics for 2.5-V Supply
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
VCOM,
VNO, VNC
0
ron
ON-state
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
Switch ON,
see Figure 12
Δron
ON-state
resistance
match
between
channels
VNO or VNC = 1.6 V,
ICOM = –8 mA,
Switch ON,
see Figure 12
ron(flat)
ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
Switch ON,
see Figure 12
NO, NC
OFF leakage
current
VNO or VNC = 0.5 V,
VCOM = 2.2 V,
or
VNO or VNC = 2.2 V,
VCOM = 0.5 V,
Switch OFF,
see Figure 13
INO(OFF),
INC(OFF)
(1)
Analog signal
range
25°C
Full
35
2.3 V
0.3
2.3 V
30
2.3 V
25°C
Full
2.7 V
V
Ω
0.5
0.7
25°C
Full
45
50
25°C
Full
V+
Ω
40
40
–0.1
0.05
0.1
–0.2
0.1
0.2
Ω
µA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics for 2.5-V Supply (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
INO(ON),
INC(ON)
NO, NC
ON leakage
current
VNO or VNC = 0.5 V,
VCOM = Open,
or
VNO or VNC = 2.2 V,
VCOM = Open,
Switch ON,
see Figure 14
ICOM(ON)
COM
ON leakage
current
VCOM = 0.5 V,
VNO or VNC = Open,
or
VCOM = 2.2 V,
VNO or VNC = Open,
Switch ON,
see Figure 14
TA
V+
25°C
Full
2.7 V
25°C
Full
2.7 V
MIN
TYP
MAX
–0.1
0.05
0.1
–0.2
0.1
0.2
–0.1
0.05
0.1
–0.2
0.1
0.2
UNIT
µA
µA
Digital Control Input (IN)
VIH
Input logic high
Full
V+ × 0.7
5.5
V
VIL
Input logic low
Full
0
V+ × 0.3
V
Input leakage
current
VI = 5.5 V or 0
25°C
–0.1
Turnon time
VCOM = 1.5 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
tOFF
Turnoff time
VCOM = 1.5 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
tBBM
Break-beforemake time
VNC = VNO = V+ / 2,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
QC
Charge injection
VGEN = 0,
RGEN = 0,
CNO(OFF),
CNC(OFF)
NO, NC
OFF
capacitance
IIH, IIL
Full
2.7 V
0.05
–1
0.1
1
µA
Dynamic
25°C
2.5 V
5
Full
2.3 V
to
2.7 V
3.5
25°C
2.5 V
1
Full
2.3 V
to
2.7 V
1
25°C
2.5 V
3.5
Full
2.3 V
to
2.7 V
3
CL = 0.1 nF,
see Figure 21
25°C
2.5 V
2
pC
VNO or VNC = V+ or GND,
Switch OFF,
see Figure 15
25°C
2.5 V
5.5
pF
CNO(ON),
CNC(ON)
NO, NC
VNO or VNC = V+ or GND,
ON capacitance
Switch ON,
see Figure 15
25°C
2.5 V
17.5
pF
CCOM(ON)
COM
VCOM = V+ or GND,
ON capacitance
Switch ON,
see Figure 15
25°C
2.5 V
17.5
pF
Digital input
capacitance
VI = V+ or GND,
See Figure 15
25°C
2.5 V
2.8
pF
BW
Bandwidth
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
2.5 V
300
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
see Figure 19
25°C
2.5 V
–65
dB
XTALK
Crosstalk
RL = 50 Ω,
f = 10 MHz,
Switch ON,
see Figure 20
25°C
2.5 V
–66
dB
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20
kHz,
see Figure 22
25°C
2.5 V
0.025
%
Positive supply
current
VI = V+ or GND,
Switch ON or
OFF
25°C
2.7 V
2.5
tON
CI
8
13.5
14
3.5
6.5
7.5
5
ns
ns
7
7.5
ns
Supply
I+
8
Full
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5
µA
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6.8 Electrical Characteristics for 1.8-V Supply
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
VCOM,
VNO, VNC
Analog signal
range
0
ron
ON-state
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –4 mA,
Switch ON,
see Figure 12
Δron
ON-state
resistance
match
between
channels
VNO or VNC = 1.16 V,
ICOM = –4 mA,
Switch ON,
see Figure 12
ron(flat)
ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –4 mA,
Switch ON,
see Figure 12
INO(OFF),
INC(OFF)
NO, NC
OFF leakage
current
VNO or VNC = 0.3 V,
VCOM = 1.65 V,
or
VNO or VNC = 1.65 V,
VCOM = 0.3 V,
Switch OFF,
see Figure 13
INO(ON),
INC(ON)
NO, NC
ON leakage
current
VNO or VNC = 0.3 V,
VCOM = Open,
or
VNO or VNC = 1.65 V,
VCOM = Open,
Switch ON,
see Figure 14
ICOM(ON)
COM
ON leakage
current
VCOM = 0.3 V,
VNO or VNC = Open,
or
VCOM = 1.65 V,
VNO or VNC = Open,
Switch ON,
see Figure 14
25°C
Full
140
1.65 V
0.5
1.65 V
125
1.65 V
25°C
Full
1.95 V
25°C
Full
1.95 V
25°C
Full
1.95 V
V
Ω
0.6
0.75
25°C
Full
160
160
25°C
Full
V+
Ω
130
140
–0.1
0.05
0.1
–0.2
0.1
0.2
–0.1
0.05
0.1
–0.2
0.1
0.2
–0.1
0.05
0.1
–0.2
0.1
0.2
Ω
µA
µA
µA
Digital Control Input (IN)
VIH
Input logic high
Full
VIL
Input logic low
Full
0
IIH, IIL
Input leakage
current
VI = 5.5 V or 0
25°C
–0.1
Turnon time
VCOM = 1.3 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
tOFF
Turnoff time
VCOM = 1.3 V,
RL = 300 Ω,
CL = 35 pF,
see Figure 16
tBBM
Break-beforemake time
VNC = VNO = V+ / 2,
RL = 50 Ω,
CL = 35 pF,
see Figure 17
QC
Charge injection
VGEN = 0,
RGEN = 0,
CNO(OFF),
CNC(OFF)
NO, NC
OFF
capacitance
Full
V+ × 0.65
1.95 V
0.05
–1
5.5
V
V+ × 0.35
V
0.1
1
µA
Dynamic
25°C
1.8 V
5
Full
1.65 V
to
1.95 V
7
25°C
1.8 V
1
Full
1.65 V
to
1.95 V
1
25°C
1.8 V
5.5
Full
1.65 V
to
1.95 V
5.2
CL = 0.1 nF,
see Figure 21
25°C
1.8 V
1
pC
VNO or VNC = V+ or GND,
Switch OFF,
see Figure 15
25°C
1.8 V
5.5
pF
CNO(ON),
CNC(ON)
NO, NC
VNO or VNC = V+ or GND,
ON capacitance
Switch ON,
see Figure 15
25°C
1.8 V
17.5
pF
CCOM(ON)
COM
VCOM = V+ or GND,
ON capacitance
Switch ON,
see Figure 15
25°C
1.8 V
17.5
pF
tON
(1)
15
23
24
3.5
6.5
7.5
7.5
ns
ns
9
12
ns
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
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Electrical Characteristics for 1.8-V Supply (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Digital input
capacitance
VI = V+ or GND,
See Figure 15
25°C
1.8 V
2.8
pF
BW
Bandwidth
RL = 50 Ω,
Switch ON,
see Figure 18
25°C
1.8 V
300
MHz
OISO
OFF isolation
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
see Figure 19
25°C
1.8 V
–65
dB
XTALK
Crosstalk
RL = 50 Ω,
f = 10 MHz,
Switch ON,
see Figure 20
25°C
1.8 V
–66
dB
THD
Total harmonic
distortion
RL = 10 kΩ,
CL = 50 pF,
f = 20 Hz to 20
kHz,
see Figure 22
25°C
1.8 V
0.015
%
Positive supply
current
VI = V+ or GND,
Switch ON or OFF
25°C
1.95 V
2.5
CI
Supply
I+
10
Full
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6.9 Typical Characteristics
140
16
120
14
12
100
V+ = 1.8 V
10
80
ron (Ω)
ron (Ω)
85C
60
40
V+ = 2.5 V
V+ = 3.3 V
20
8
6
1
2
–40C
4
V+ = 5 V
2
0
0
25C
3
4
0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
VCOM (V)
5
VCOM (V)
Figure 2. ron vs VCOM (V+ = 3 V)
Figure 1. ron vs VCOM
3.5
10
Leakage Current (nA)
855C
8
ron (W)
6
255C
–405C
4
2
0
ICOM(ON)
2.5
INO(ON)
2.0
INC(OFF)
1.5
INO(OFF)
1.0
0.5
0.0
0
1
2
3
VCOM (V)
4
5
–40°C
18
7
16
6
14
5
12
tON/tOFF (ns)
8
V+ = 5 V
4
3
25°C
TA (°C)
85°C
Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
Figure 3. ron vs VCOM (V+ = 4.5 V)
Charge Injection (pC)
INO(ON)
3.0
V+ = 3 V
2
1
tON
10
8
6
tOFF
4
2
0
0
1
2
3
4
5
6
0
1.5
Bias Voltage (V)
Figure 5. Charge Injection (QC) vs VCOM
2.5
3.5
V+ (V)
4.5
5.5
Figure 6. tON and tOFF vs Supply Voltage
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Typical Characteristics (continued)
7
3.0
tON
6
VIL
5
2.0
4
3
I+ (µA)
I+ (µA)
VIH
2.5
tOFF
1.5
1.0
2
0.5
1
0.0
1.0
0
−40°C
85°C
25°C
TA (°C)
1.8
2.6
3.4
5.0
5.8
TA (5C)
Figure 8. Logic-Level Threshold vs V+
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
0
0.0
Crosstalk
−0.5
−20
−1.0
−1.5
−40
−2.0
Gain (dB)
Gain (dB)
4.2
−2.5
−3.0
−3.5
−4.0
−60
OFF Isolation
−80
−100
−4.5
−5.0
1
10
100
1000
−120
0.1
Frequency (MHz)
1
10
Frequency (MHz)
100
Figure 9. Bandwidth (Gain vs Frequency) (V+ = 5 V)
Figure 10. OFF Isolation (V+ = 5 V)
1000
0.5
THD + Noise (%)
0.45
0.4
035
0.3
0.25
0.2
0.15
0.10
0.05
0
0
5
10
15
20
25
Frequency (kH)
Figure 11. Total Harmonic Distortion vs Frequency
12
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7 Parameter Measurement Information
V+
VNC NC
COM
+
VCOM
Channel ON
VNO NO
r on =
VI
VCOM
ICOM
IN
VNO or VNC
Ω
I COM
VI = VIH or VIL
+
GND
Figure 12. ON-State Resistance (ron)
V+
VNC NC
COM
+
VI
VCOM
+
VNO NO
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
GND
Figure 13. OFF-State Leakage Current (INC(OFF), INO(OFF))
V+
VNC NC
COM
+
VNO NO
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 14. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON))
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V+
Capacitance
Meter
VNC
NC
VNO
NO
VBIAS = V+ or GND
VI = VIH or VIL
VCOM COM
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
VBIAS
VI
IN
GND
Figure 15. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))
V+
VCOM
VI
Logic
Input(1)
(3)
NC or NO
VNC or VNO
NC or NO
CL(2)
TEST
RL
CL
tON
300 Ω
35 pF
tOFF
300 Ω
35 pF
COM
RL
IN
CL(2)
RL
V+
Logic
Input
(VI)
GND
50%
50%
0
tON
Switch
Output
(VNC or VNO)
tOFF
90%
90%
(1)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
(2)
CL includes probe and jig capacitance.
(3)
See Electrical Characteristics for VCOM.
Figure 16. Turnon (tON) and Turnoff Time (tOFF)
14
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V+
NC or NO
V+
Logic
Input
(VI)
VNC or VNO
VCOM
50%
0
COM
NC or NO
CL(2)
RL
Switch
Output
(VCOM)
90%
IN
VI
90%
tBBM
Logic
Input(1)
VNC or VNO = V+ / 2
RL = 50 Ω
CL = 35 pF
GND
(1)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
(2)
CL includes probe and jig capacitance.
Figure 17. Break-Before-Make Time (tBBM)
V+
Network Analyzer
50 Ω
VNC
NC
Channel ON: NC to COM
COM
Source
Signal
VCOM
VI = V+ or GND
NO
Network Analyzer Setup
VI
50 Ω
Source Power = 0 dBm
(632-mV P-P at 50- Ω load)
IN
+
GND
DC Bias = 350 mV
Figure 18. Bandwidth (BW)
V+
Network Analyzer
Channel OFF: NC to COM
50 Ω
VNC
NC
VI = V+ or GND
COM
Source
Signal
50 Ω
Network Analyzer Setup
VI
50 Ω
VCOM
NO
+
IN
GND
Source Power = 0 dBm
(632-mV P-P at 50- Ω load)
DC Bias = 350 mV
Figure 19. OFF Isolation (OISO)
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V+
Network Analyzer
Channel ON: NC to COM
50 Ω
VNC
Channel OFF: NO to COM
NC
VCOM
Source
Signal
VNO
NO
Network Analyzer Setup
50 Ω
VI IN
50 Ω
VI = V+ or GND
+
Source Power = 0 dBm
(632-mV P-P at 50- Ω load)
GND
DC Bias = 350 mV
Figure 20. Crosstalk (XTALK)
V+
RGEN
VIH
OFF
ON
OFF V
IL
NC or NO
COM
+
VGEN
Logic
Input
(VI)
VCOM
VCOM
NC or NO
ΔVCOM
CL(2)
VI
VGEN = 0 to V+
IN
Logic
Input(1)
RGEN = 0
CL = 0.1 nF
QC = CL × ΔVCOM
VI = VIH or VIL
GND
(1)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
(2)
CL includes probe and jig capacitance.
Figure 21. Charge Injection (QC)
Channel ON: COM to NC
VSOURCE = V+ P-P
VI = VIH or VIL
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+ / 2
V+
Audio Analyzer
RL
10 µF
Source
Signal
10 µF
NC
COM
600 Ω
NO
600 Ω
VI
CL(1)
IN
+
GND
600 Ω
(1)
CL includes probe and jig capacitance.
Figure 22. Total Harmonic Distortion (THD)
16
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8 Detailed Description
8.1 Overview
The TS5A3157 is a single-pole-double-throw (SPDT) solid-state analog switch. The TS5A3157, like all analog
switches, is bidirectional. When powered on, each COM pin is connected to the NC pin. For this device, NC
stands for normally closed and NO stands for normally open. If IN is low, COM is connected to NC. If IN is high,
COM is connected to NO.
The TS5A3157 is a break-before-make switch. This means that during switching, a connection is broken before a
new connection is established. The NC and NO pins are never connected to each other.
8.2 Functional Block Diagram
IN
COM
NC
NO
8.3 Feature Description
The low ON-state resistance, ON-state resistance matching, and charge injection in the TS5A3157 make this
switch an excellent choice for analog signals that require minimal distortion. In addition, the low THD allows
audio signals to be preserved more clearly as they pass through the device.
The 1.65-V to 5.5-V operation allows compatibility with more logic levels, and the bidirectional I/Os can pass
analog signals from 0 V to V+ with low distortion. The control inputs are 5-V tolerant, allowing control signals to
be present without VCC.
8.4 Device Functional Modes
Table 1. Function Table
IN
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
L
ON
OFF
H
OFF
ON
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TS5A3157 can be used in a variety of customer systems. The TS5A3157 can be used anywhere multiple
analog or digital signals must be selected to pass across a single line.
9.2 Typical Application
5V
V+
IN
NO
MCU or
System Logic
To/From
System
COM
GND
NC
Figure 23. System Schematic for TS5A3157
9.2.1 Design Requirements
In this particular application, V+ was 1.8 V, although V+ is allowed to be any voltage specified in Recommended
Operating Conditions. A decoupling capacitor is recommended on the V+ pin. See Power Supply
Recommendations for more details.
9.2.2 Detailed Design Procedure
In this application, IN is, by default, pulled low to GND. Choose the resistor size based on the current driving
strength of the GPIO, the desired power consumption, and the switching frequency (if applicable). If the GPIO is
open-drain, use pullup resistors instead.
18
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Typical Application (continued)
9.2.3 Application Curve
10
9
8
I+ (µA)
7
6
5
4
3
2
1
0
−40°C
25°C
TA (°C)
85°C
Figure 24. Power-Supply Current vs Temperature
(V+ = 5 V)
10 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in the
Recommended Operating Conditions.
Each VCC terminal should have a good bypass capacitor to prevent power disturbance. For devices with a single
supply, a 0.1-μF bypass capacitor is recommended. If there are multiple pins labeled VCC, then a 0.01-μF or
0.022-μF capacitor is recommended for each VCC because the VCC pins will be tied together internally. For
devices with dual supply pins operating at different voltages, for example VCC and VDD, a 0.1-µF bypass
capacitor is recommended for each supply pin. It is acceptable to parallel multiple bypass capacitors to reject
different frequencies of noise. 0.1-μF and 1-μF capacitors are commonly used in parallel. The bypass capacitor
should be installed as close to the power terminal as possible for best results.
11 Layout
11.1 Layout Guidelines
Reflections and matching are closely related to loop antenna theory, but different enough to warrant their own
discussion. When a PCB trace turns a corner at a 90° angle, a reflection can occur. This is primarily due to the
change of width of the trace. At the apex of the turn, the trace width is increased to 1.414 times its width. This
upsets the transmission line characteristics, especially the distributed capacitance and self–inductance of the
trace — resulting in the reflection. It is a given that not all PCB traces can be straight, and so they will have to
turn corners. Below figure shows progressively better techniques of rounding corners. Only the last example
maintains constant trace width and minimizes reflections.
Unused switch I/Os, such as NO, NC, and COM, can be left floating or tied to GND. However, the IN pin must be
driven high or low. Due to partial transistor turnon when control inputs are at threshold levels, floating control
inputs can cause increased ICC or unknown switch selection states.
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11.2 Layout Example
BETTER
BEST
2W
WORST
1W min.
W
Figure 25. Trace Example
20
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Device Nomenclature
Table 2. Parameter Description
SYMBOL
VCOM
DESCRIPTION
Voltage at COM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Δron
ron(flat)
Resistance between COM and NC or COM and NO ports when the channel is ON
Difference of ron between channels in a specific device
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state and
the output (NC or NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay
between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay
between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning OFF.
tBBM
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation delay
between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON)
CI
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency,
with the corresponding channel (NC to COM or NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC).
This is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency where the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean
square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of fundamental harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
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12.2 Documentation Support
12.2.1 Related Documentation
For related documentation, see the following:
• Implications of Slow or Floating CMOS Inputs, SCBA004
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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www.ti.com
30-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS5A3157DBVR
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JC5R
TS5A3157DBVRG4
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
JC5R
TS5A3157DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 85
(JC5, JCF, JCJ, JC
R)
TS5A3157DCKRE4
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JC5, JCF, JCJ, JC
R)
TS5A3157DCKRG4
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(JC5, JCF, JCJ, JC
R)
TS5A3157YZPR
ACTIVE
DSBGA
YZP
6
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
JCN
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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