TS5A3357-Q1
www.ti.com................................................................................................................................................................................................ SCDS290 – AUGUST 2009
SINGLE 5-Ω SP3T ANALOG SWITCH
5-V/3.3-V 3:1 MULTIPLEXER/DEMULTIPLEXER
Check for Samples: TS5A3357-Q1
FEATURES
1
•
•
•
•
•
•
•
•
•
•
Qualified for Automotive Applications
Specified Break-Before-Make Switching
Low ON-State Resistance
High Bandwidth
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch Up Exceeds 100 mA per
JESD78B, Class I
SC-70 (DCU) PACKAGE
(TOP VIEW)
NO0
1
NO1
2
NO2
3
GND
TS5A3357
8 V+
7
Logic
Control
4
COM
6
IN1
5
IN2
DESCRIPTION/ORDERING INFORMATION
The TS5A3357 is a high-performance, single-pole triple throw (SP3T) analog switch that is designed to operate
from 1.65 V to 5.5 V. The device offers a low ON-state resistance and low input/output capacitance and, thus,
causes a very low signal distortion. The break-before-make feature allows transferring of a signal from one port
to another, with a minimal signal distortion. This device also offers a low charge injection which makes this
device suitable for high-performance audio and data acquisition systems.
Table 1. Summary of Characteristics (1)
Configuration
Number of channels
ON-state resistance (ron)
Triple 3:1 Multiplexer/
Demultiplexer
(1 × SP3T)
1
5Ω
ON-state resistance match (Δron)
0.1 Ω
ON-state resistance flatness (ron(flat))
6.5 Ω
Turn-on/turn-off time (tON/tOFF)
6.5 ns/3.7 ns
Break-before-make time (tBBM) (2)
0.5 ns
Charge injection (QC)
3.4 pC
Bandwidth (BW)
334 MHz
OFF isolation (OISO)
–82 dB at 10 MHz
Crosstalk (XTALK)
–62 dB at 10 MHz
Total harmonic distortion (THD)
Leakage current (ICOM(OFF))
Package option
(1)
(2)
0.05%
±1 μA
8-pin DCU (US8)
V+ = 5 V, TA = 25°C
Specified by designed. Not production tested.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TS5A3357-Q1
SCDS290 – AUGUST 2009................................................................................................................................................................................................ www.ti.com
Table 2. FUNCTION TABLE
IN1
IN2
COM TO NO0
COM TO NO1
COM TO NO2
L
L
OFF
OFF
OFF
H
L
ON
OFF
OFF
L
H
OFF
ON
OFF
H
H
OFF
OFF
ON
Table 3. ORDERING INFORMATION (1)
TA
PACKAGE
–40°C to 125°C
(1)
(2)
SOT – DCU
(2)
ORDERABLE PART NUMBER
Reel of 3000
TS5A3357QDCURQ1
TOP-SIDE MARKING
JAVR
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
ABSOLUTE MINIMUM AND MAXIMUM RATINGS (1)
(2)
over operating free-air temperature range (unless otherwise noted)
V+
Supply voltage range (3)
VNO
VCOM
Analog voltage range (3)
IK
Analog port diode current
INO
ICOM
On-state switch current
(4) (5)
VNO, VCOM < 0 or VNO, VCOM > V+
VNO, VCOM = 0 to V+
(3) (4)
VI
Digital input voltage range
IIK
Digital input clamp current
I+
Continuous current through V+
IGND
Continuous current through GND
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
VI < 0
MIN
MAX
–0.5
6.5
V
–0.5
V+ + 0.5
V
–50
50
mA
–100
100
mA
–0.5
6.5
–50
UNIT
V
mA
100
mA
–100
100
mA
–65
150
°C
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
PACKAGE THERMAL IMPEDANCE
θJA
(1)
2
Package thermal impedance (1)
MAX
UNIT
165
°C/W
The package thermal impedance is calculated in accordance with JESD 51-7.
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ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal range
Peak ON resistance
VCOM, VNO
rpeak
0
0 ≤ VNO ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 13
VNO = 0,
ICOM = 30 mA
ON-state resistance
ron
Full
4.5 V
25°C
Switch ON,
See Figure 13
VNO = 4.5 V,
ICOM = –30 mA
25°C
Full
V
15
Ω
5
7
6
12
Full
VNO = 2.4 V,
ICOM = –30 mA
V+
7
4.5 V
12
25°C
7
Full
Ω
15
15
ON-state resistance
match between
channels
Δron
VNO = 3.15 V,
ICOM = –30 mA,
Switch ON,
See Figure 13
25°C
4.5 V
0.1
Ω
ON-state
resistance flatness
ron(flat)
0 ≤ VNO ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 13
25°C
5V
6.5
Ω
NO
OFF leakage current
INO(OFF)
VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
25°C
COM
OFF leakage current
ICOM(OFF)
VCOM = 0 to V+,
VNO = V+ to 0,
Switch OFF,
See Figure 14
25°C
NO
ON leakage current
INO(ON)
VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 14
25°C
COM
ON leakage current
ICOM(ON)
VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 14
25°C
–0.2
0.2
–1
1
–0.2
0.2
–1
1
–0.2
0.2
–1
1
–0.2
0.2
–1
1
Full
V+ × 0.7
5.5
V
Full
0
V+ × 0.3
V
Full
Full
Full
Full
5.5 V
0
5.5 V
5.5 V
μA
μA
μA
μA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage
current
(1)
(2)
IIH, IIL
VI = 5.5 V or 0
25°C
Full
5.5 V
0.1
1
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY
(1)
(continued)
TA
V+
MIN
V+ = 4.5 V to 5.5 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TYP
MAX
UNIT
Dynamic
Turn-on time
tON
VNO = V+ or GND, CL = 50 pF,
RL = 500 Ω,
See Figure 16
25°C
5V
1.5
10
Full
4.5 V to 5.5 V
1.5
10
Turn-off time
tOFF
VNO = V+ or GND, CL = 50 pF,
RL = 500 Ω,
See Figure 16
25°C
5V
0.8
6.5
Full
4.5 V to 5.5 V
0.8
7
Break-beforemake time (3)
tBBM
VNO = V+,
RL = 50 Ω,
CL = 50 pF,
See Figure 17
25°C
5V
0.5
Full
4.5 V to 5.5 V
0.5
VGEN = 0,
CL = 0.1 nF,
See Figure 21
25°C
5V
3.4
pC
Charge
injection
QC
ns
ns
ns
NO
OFF capacitance
CNO(OFF)
VNO = V+ or GND,
See Figure 15
Switch OFF,
25°C
5V
4.5
pF
COM
OFF capacitance
CCOM(OFF)
VNO = V+ or GND,
See Figure 15
Switch OFF,
25°C
5V
10.5
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
See Figure 15
Switch ON,
25°C
5V
17
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or
GND,
Switch ON,
See Figure 15
25°C
5V
17
pF
VI = V+ or GND,
See Figure 15
25°C
5V
3
pF
Digital input
capacitance
CI
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C 4.5 V to 5.5 V
334
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
25°C 4.5 V to 5.5 V
–82
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
25°C 4.5 V to 5.5 V
–62
dB
VI = V+ or GND,
Switch ON or
OFF
Supply
Positive supply
current
(3)
4
I+
25°C
Full
5.5 V
1
10
μA
Specified by designed. Not production tested.
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ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (1)
V+ = 3 V to 3.6 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog Switch
Analog signal range
Peak ON resistance
VCOM, VNO
rpeak
0
0 ≤ VNO ≤ V+,
ICOM = –24 mA,
VNO = 0 V,
ICOM = 24 mA
ON-state resistance
ron
VNO = 3 V,
ICOM = –24 mA
Switch ON,
See Figure 13
Full
3V
25°C
Switch ON,
See Figure 13
Full
25°C
V+
V
25
Ω
6.5
9
9
20
9
3V
Full
Ω
20
ON-state resistance
match between
channels
Δron
VNO = 2.1 V,
ICOM = –24 mA,
Switch ON,
See Figure 13
25°C
3V
0.1
Ω
ON-state
resistance flatness
ron(flat)
0 ≤ VNO ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 13
25°C
3.3 V
13.5
Ω
NO
OFF leakage current
INO(OFF)
VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
25°C
COM
OFF leakage current
ICOM(OFF)
VCOM = 0 to V+,
VNO = V+ to 0,
Switch OFF,
See Figure 14
25°C
NO
ON leakage current
INO(ON)
VNO = 0 to V+,
VCOM = V+ to 0,
Switch ON,
See Figure 14
25°C
COM
ON leakage current
ICOM(ON)
VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 14
25°C
Full
Full
Full
Full
3.6 V
3.6 V
3.6 V
3.6 V
–0.2
0.2
–1
1
–0.2
0.2
–1
1
–0.2
0.2
–1
1
–0.2
0.2
–1
1
μA
μA
μA
μA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Full
V+ × 0.7
5.5
V
Input logic low
VIL
Full
0
V+ × 0.3
V
25°C
–1
0.1
Input leakage
current
(1)
(2)
IIH, IIL
VI = 5.5 V or 0
Full
3.6 V
1
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY
(1)
(continued)
V+ = 3 V to 3.6 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
25°C
3.3 V
2
12
Full
3 V to 3.6 V
2
12.9
25°C
3.3 V
1.3
8
Full
3 V to 3.6 V
1.5
8
Dynamic
Turn-on time
tON
VNO = V+ or
GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 16
Turn-off time
tOFF
VNO = V+ or
GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 16
Break-beforemake time (3)
tBBM
VNO = V+,
RL = 50 Ω,
CL = 50 pF,
See Figure 17
25°C
3.3 V
0.5
Full
3 V to 3.6 V
0.5
Charge
injection
QC
VGEN = 0,
CL = 0.1 nF,
See Figure 21
25°C
3.3 V
1.75
pC
CNO(OFF)
VNO = V+ or
GND,
Switch OFF,
See Figure 15
25°C
3.3 V
4.5
pF
VNO = V+ or
CCOM(OFF) GND,
Switch OFF,
See Figure 15
25°C
3.3 V
10.5
pF
VNO = V+ or
GND,
Switch ON,
See Figure 15
25°C
3.3 V
17
pF
VCOM = V+ or
GND,
Switch ON,
See Figure 15
25°C
3.3 V
17
pF
VI = V+ or GND,
See Figure 15
25°C
3.3 V
3
pF
NO
OFF capacitance
COM
OFF capacitance
NO
ON capacitance
CNO(ON)
COM
ON capacitance
CCOM(ON)
Digital input
capacitance
CI
ns
ns
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
3 V to 3.6 V
327
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
25°C
3 V to 3.6 V
–82
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
25°C
3 V to 3.6 V
–62
dB
VI = V+ or GND,
Switch ON or OFF
Supply
Positive supply
current
(3)
6
I+
25°C
Full
3.6 V
1
10
μA
Specified by designed. Not production tested.
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog Switch
Analog signal
range
Peak ON
resistance
ON-state
resistance
ON-state
resistance
match between
channels
VCOM, VNO
rpeak
0
0 ≤ VNO ≤ V+,
ICOM = –8 mA,
VNO = 0 V,
ICOM = 8 mA
ron
VNO = 2.3 V,
ICOM = –8 mA
Switch ON,
See Figure 13
Full
2.3 V
25°C
Switch ON,
See Figure 13
Full
25°C
8
V+
V
50
Ω
12
12
2.3 V
11
Full
30
Ω
30
Δron
VNO = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 13
25°C
2.3 V
0.3
Ω
ron(flat)
0 ≤ VNO ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 13
25°C
2.5 V
39
Ω
NO
OFF leakage
current
INO(OFF)
VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
COM
OFF leakage
current
ICOM(OFF)
VCOM = 0 to V+,
VNO = V+ to 0,
Switch OFF,
See Figure 14
NO
ON leakage
current
INO(ON)
VNO = 0 to V+,
VCOM = V+ to 0,
Switch ON,
See Figure 14
COM
ON leakage
current
ICOM(ON)
VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 14
ON-state
resistance flatness
25°C
Full
2.7 V
25°C
Full
2.7 V
25°C
Full
2.7 V
25°C
Full
2.7 V
–0.2
0.2
–1
1
–0.2
0.2
–1
1
–0.2
0.2
–1
1
–0.2
0.2
–1
1
μA
μA
μA
μA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Full
V+ × 0.75
5.5
V
Input logic low
VIL
Full
0
V+ × 0.25
V
Input leakage
current
IIH, IIL
(1)
(2)
VI = 5.5 V or 0
25°C
Full
2.7 V
0.1
1
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY
(1)
(continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
25°C
2.5 V
3
15
Full
2.3 V to 2.7 V
3
19.4
25°C
2.5 V
2
8.1
Full
2.3 V to 2.7 V
2
10
Dynamic
Turn-on time
tON
VNO = V+ or
GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 16
Turn-off time
tOFF
VNO = V+ or
GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 16
Break-beforemake time (3)
tBBM
VNO = V+,
RL = 50 Ω,
CL = 50 pF,
See Figure 17
25°C
2.5 V
0.5
Full
2.3 V to 2.7 V
0.5
Charge
injection
QC
VGEN = 0,
CL = 0.1 nF,
See Figure 21
25°C
2.5 V
1.15
pC
CNO(OFF)
VNO = V+ or
GND,
Switch OFF,
See Figure 15
25°C
2.5 V
4.5
pF
VNO = V+ or
CCOM(OFF) GND,
Switch OFF,
See Figure 15
25°C
2.5 V
10.5
pF
VNO = V+ or
GND,
Switch ON,
See Figure 15
25°C
2.5 V
17
pF
VCOM = V+ or
GND,
Switch ON,
See Figure 15
25°C
2.5 V
17
pF
VI = V+ or GND,
See Figure 15
25°C
2.5 V
3
pF
NO
OFF capacitance
COM
OFF capacitance
NO
ON capacitance
CNO(ON)
COM
ON capacitance
CCOM(ON)
Digital input
capacitance
CI
ns
ns
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
2.3 V to 2.7 V
320
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
25°C
2.3 V to 2.7 V
–81
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
25°C
2.3 V to 2.7 V
–61
dB
VI = V+ or GND,
Switch ON or
OFF
Supply
Positive supply
current
(3)
8
I+
25°C
Full
2.7 V
1
10
μA
Specified by designed. Not production tested.
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog Switch
Analog signal
range
Peak ON
resistance
ON-state
resistance
ON-state
resistance
match between
channels
VCOM, VNO
rpeak
0
0 ≤ VNO ≤ V+,
ICOM = –4 mA,
VNO = 0 V,
ICOM = 4 mA
ron
VNO = 1.8 V,
ICOM = –4 mA
Switch ON,
See Figure 13
Full
1.65 V
25°C
Switch ON,
See Figure 13
Full
25°C
10
V+
V
150
Ω
20
20
1.65 V
17
Full
50
Ω
50
Δron
VNO = 1.15 V,
ICOM = –4 mA,
Switch ON,
See Figure 13
25°C
1.65 V
0.3
Ω
ron(flat)
0 ≤ VNO ≤ V+,
ICOM = –4 mA,
Switch ON,
See Figure 13
25°C
1.8 V
140
Ω
NO
OFF leakage
current
INO(OFF)
VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
COM
OFF leakage
current
ICOM(OFF)
VCOM = 0 to V+,
VNO = V+ to 0,
Switch OFF,
See Figure 14
NO
ON leakage
current
INO(ON)
VNO = 0 to V+,
VCOM = V+ to 0,
Switch ON,
See Figure 14
COM
ON leakage
current
ICOM(ON)
VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 14
ON-state
resistance flatness
25°C
Full
1.95 V
25°C
Full
1.95 V
25°C
Full
1.95 V
25°C
Full
1.95 V
–0.2
0.2
–1
1
–0.2
0.2
–1
1
–0.2
0.2
–1
1
–0.2
0.2
–1
1
μA
μA
μA
μA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
Full
V+ × 0.75
5.5
V
Input logic low
VIL
Full
0
V+ × 0.25
V
Input leakage
current
IIH, IIL
(1)
(2)
VI = 5.5 V or 0
25°C
Full
1.95 V
0.1
1
μA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY
(1)
(continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
25°C
1.8 V
5
32
Full
1.65 V to
1.95 V
5
40
25°C
1.8 V
3
14
Full
1.65 V to
1.95 V
3
17.6
Dynamic
Turn-on time
tON
VNO = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 16
Turn-off time
tOFF
VNO = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 16
Break-beforemake time (3)
tBBM
VNO = V+,
RL = 50 Ω,
CL = 50 pF,
See Figure 17
VGEN = 0,
CL = 0.1 nF,
Charge
injection
QC
ns
ns
25°C
1.8 V
0.5
Full
1.65 V to
1.95 V
0.5
See Figure 21
25°C
1.8 V
0.3
pC
ns
NO
OFF capacitance
CNO(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 15
25°C
1.8 V
4.5
pF
COM
OFF capacitance
CCOM(OFF)
VNO = V+ or GND,
Switch OFF,
See Figure 15
25°C
1.8 V
10.5
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 15
25°C
1.8 V
17
pF
VCOM = V+ or GND,
See Figure 15
Switch ON,
25°C
1.8 V
17
pF
VI = V+ or GND,
See Figure 15
25°C
1.8 V
3
pF
COM ON
capacitance
CCOM(ON)
Digital input
capacitance
CI
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
1.65 V to
1.95 V
341
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
25°C
1.65 V to
1.95 V
–81
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
25°C
1.65 V to
1.95 V
–61
dB
VI = V+ or GND,
Switch ON or
OFF
Supply
Positive supply
current
(3)
10
I+
25°C
Full
1.95 V
1
10
μA
Specified by designed. Not production tested.
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TYPICAL PERFORMANCE
°C
°C
Ω
Ω
°C
°C
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM (V+ = 3 V)
°C
Ω
°C
°C
Figure 3. ron vs VCOM (V+ = 4.5 V)
Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
Figure 5. Charge Injection (QC) vs VCOM
Figure 6. tON and tOFF vs V+
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TYPICAL PERFORMANCE (continued)
°C
12
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
Figure 8. Logic-Level Threshold vs V+
Figure 9. Frequency Response (V+ = 3 V)
Figure 10. OFF Isolation and Crosstalk vs Frequency
(V+ = 3 V)
Figure 11. Total Harmonic Distortion vs Frequency
(V+ = 5 V)
Figure 12. Power-Supply Current vs Temperature
(V+ = 5 V)
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Table 4. PIN DESCRIPTION
PIN NO.
NAME
1
NO0
Normally open
DESCRIPTION
2
NO1
Normally open
3
NO2
Normally open
4
GND
Digital ground
5
IN2
Digital control to connect COM to NO
6
IN1
Digital control to connect COM to NO
7
COM
8
V+
Common
Power supply
Table 5. PARAMETER DESCRIPTION
SYMBOL
VCOM
VNO
ron
DESCRIPTION
Voltage at COM
Voltage at NO
Resistance between COM and NC or COM and NO ports when the channel is ON
rpeak
Peak on-state resistance over a specified voltage range
Δron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) open
ICOM(OFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
tBBM
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
CI
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to
NC). This is measured in a specific frequency and in dB.
BW
I+
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Static power-supply current with the control (IN) pin at V+ or GND
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PARAMETER MEASUREMENT INFORMATION
Ω
Figure 13. ON-State Resistance (ron)
OFF-State Leakage Current
ON-State Leakage Current
Figure 14. ON- and OFF-State Leakage Current (ICOM(ON), ICOM(OFF), INO(ON), INO(OFF))
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
Figure 15. Capacitance (CI, CCOM(ON), CNO(OFF), CCOM(OFF), CNO(ON))
14
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B.
CL includes probe and jig capacitance.
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PARAMETER MEASUREMENT INFORMATION (continued)
x
VOH
x
Ω
Ω
VOH + 0.3 V
x
VOL
x
V
VOH – 0.3 V OH
Ω
Ω
Figure 16. Turn-On (tON) and Turn-Off Time (tOFF)
C.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
D.
CL includes probe and jig capacitance.
tr = < 2.5 ns
tf = < 2.5 ns
VOH
Ω
Figure 17. Break-Before-Make Time (tBBM)
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PARAMETER MEASUREMENT INFORMATION (continued)
Ω
Channel ON: NO0 to COM
Network Analyzer Setup
Ω
Source Power = 0 dBM
DC Bias = 350 mV
Figure 18. Bandwidth (BW)
Channel OFF: NO0 to COM
Ω
Ω
Network Analyzer Setup
Source Power = 0 dBM
DC Bias = 350 mV
Ω
Figure 19. OFF Isolation (OISO)
Channel OFF: NO0 to COM
Channel ON: NO0–NO1 to
COM
Ω
Network Analyzer Setup
Ω
Source Power = 0 dBM
DC Bias = 350 mV
Figure 20. Crosstalk (XTALK)
16
E.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
F.
CL includes probe and jig capacitance.
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PARAMETER MEASUREMENT INFORMATION (continued)
Δ
xΔ
Figure 21. Charge Injection (QC)
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TS5A3357QDCURQ1
ACTIVE
VSSOP
DCU
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
JAVR
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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